JP2010135849A - Pressure control method of subject processing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a pressure control method of a subject processing apparatus which enables a plurality of processes to be carried out efficiently. <P>SOLUTION: A vacuum treatment apparatus 100 having a load lock chamber 50, a COR treatment chamber 10, a heat treatment chamber 30, and an atmosphere transfer module 70 puts the load lock chamber 50 in an atmospheric state while putting the heat treatment chamber 30 in a vacuum state to transfer a body to be processed before a COR treatment into the load lock chamber 50 from the atmosphere transfer module 70, finishes evacuating the heat treatment chamber 30 and evacuates the load lock chamber 50 up to set pressure, finishes evacuating the load lock chamber 50 when the load lock chamber 50 reaches the set pressure, evacuates the heat treatment chamber 30 so that pressure in the load lock chamber is larger than pressure in the heat treatment chamber, and links the load lock chamber 50 and heat treatment chamber to each other after the pressure condition is met. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a pressure control method for a target object processing apparatus for processing a target object, and in particular, the pressure of a target object processing apparatus for performing COR (Chemical Oxide Removal) processing or CVD processing instead of dry etching and wet etching. It relates to a control method.

  Conventionally, there is etching as a shape processing of a thin film using a chemical reaction. Usually, the etching process is a set with the lithography process. In the lithography process, a resist pattern is formed, and in the etching process, the thin film is shaped according to the formed resist pattern.

  There are two types of etching, dry etching and wet etching. The most common dry etching is parallel plate type reactive ion etching. In this parallel plate type reactive ion etching, a vacuum processing chamber provided in a vacuum processing apparatus (object processing apparatus) is evacuated, a wafer as an object to be processed is placed in the vacuum processing chamber, and then an etching gas is evacuated. Introduce into the processing chamber.

  In the vacuum processing chamber, a mounting table on which a wafer is mounted and an upper electrode facing the wafer mounting surface of the mounting table in parallel are arranged. When a high frequency voltage is applied to the mounting table, the etching gas is turned into plasma. In this plasma, charged particles such as positive and negative ions and electrons, neutral active species as etching species, and the like exist in various states. When the etching species are adsorbed by the thin film on the wafer surface, a chemical reaction occurs on the wafer surface, and the product is detached from the wafer surface and exhausted to the outside of the vacuum processing chamber, and etching proceeds. Further, depending on conditions, etching species are sputtered on the wafer surface, and etching proceeds by a physical reaction.

  At this time, since the high-frequency electric field is applied perpendicularly to the wafer surface, the etching species (radicals) also move in the direction perpendicular to the wafer surface. Therefore, the etching proceeds in a direction perpendicular to the wafer surface and does not travel isotropically on the wafer surface. That is, the etching does not spread laterally on the wafer surface. For this reason, dry etching is suitable for fine processing.

  However, in dry etching, in order to perform high-precision microfabrication according to the resist pattern, the etching rate ratio between the material to be etched and the resist material must be increased, and attention must be paid to the occurrence of crystal defects and etching damage due to impurity contamination. I must.

  On the other hand, wet etching includes a dip type in which a wafer is immersed in an etching tank containing a chemical solution and a spin type in which a chemical solution is sprayed on the wafer while rotating the wafer. In any case, side etching occurs because etching proceeds isotropically. For this reason, wet etching cannot be used for microfabrication. However, it is still used in processes such as removing the thin film entirely.

  As a method for forming a thin film using a chemical reaction, there is a CVD (Chemical Vapor Deposition) method. In the CVD method, two or more kinds of reaction gases react in the gas phase or in the vicinity of the wafer surface, and a product generated by the reaction is formed as a thin film on the wafer surface. At this time, the wafer is heated, activation energy is supplied to the reaction gas by heat radiation from the heated wafer, and the reaction of the reaction gas described above is excited.

  Conventionally, various processes such as a film forming process including the above-described CVD process, an oxidizing process, a diffusion process, an etching process as the above-described shape processing process, and an annealing process in the manufacture of an integrated circuit including a flat panel display and other electronic devices. Vacuum processing equipment has been used to perform the above. The vacuum processing apparatus usually includes one or more load lock chambers, at least one transfer chamber, and one or more processing chambers. At least two types of such vacuum processing apparatuses are known.

  One type is a multi-chamber type vacuum processing apparatus. This vacuum processing apparatus includes a process chamber as three to six vacuum processing chambers, and a vacuum preliminary chamber (load lock chamber) provided with a transfer mechanism for loading and unloading a semiconductor wafer as an object to be processed into each of the process chambers. And a polygonal transfer chamber having a plurality of connection ports on the peripheral wall, each of which is arranged around each process chamber and the load lock chamber and communicated with each other in an airtight manner via a gate valve, and is installed in the transfer chamber. It is comprised from the conveyance arm which can be rotated and expanded / contracted (for example, refer patent document 1).

  Another type is a vacuum processing apparatus including a series chamber. This vacuum processing apparatus includes a vacuum processing chamber for etching a semiconductor wafer, and a transfer arm of a scalar type single pick type or a scalar type twin pick type as transfer means for transferring the wafer between the vacuum processing chamber. It has a built-in load lock chamber. That is, the vacuum processing chamber and the load lock chamber including the transfer arm are used as one module (see, for example, Patent Document 2 and Patent Document 3).

  In any of the vacuum processing apparatuses described above, switching between vacuum / atmosphere is performed in the load lock chamber, and smooth transfer of wafers between the loader for transporting the wafer set on the wafer carrier and the vacuum processing chamber is realized. ing.

  In the case of the etching process, in any of the vacuum processing apparatuses, the reaction process gas is turned into plasma by applying a high frequency voltage to the etching gas (reaction process gas) introduced into the vacuum process chamber to perform etching. In these dry etching processes, the etching process is controlled according to the applied voltage, so that an etching process with excellent vertical anisotropy is performed, and etching according to the required line width of lithography is possible.

  However, while the development of microfabrication technology in the photolithography process for printing circuit patterns on the wafer surface is underway, a process of exposing with ultraviolet rays from a KrF excimer laser (wavelength = 248 nm) has been put to practical use as a photolithography light source. Furthermore, a process using an ArF excimer laser having a shorter wavelength (wavelength = 193 nm) is being put into practical use. Furthermore, in the next-generation process in 2005, photolithography using an F2 laser (wavelength = 157 nm) has become the most prominent technique for forming a fine pattern of 70 nm or less. However, a resist material capable of forming a 1: 1 line and space fine pattern with a film thickness of 150 to 200 nm and a line width of 65 nm or less without deteriorating dry etch resistance has not been developed. Depending on the material, there is a practical problem of particle contamination due to outgas, and fine patterning by anisotropic dry etching is approaching its limit.

  Therefore, COR (Chemical Oxide Removal) is expected as a miniaturized etching treatment method that replaces dry etching and wet etching. In the COR process, gas molecules are chemically reacted to the oxide film of the object to be processed to adhere the product, and then the wafer is heated to remove the product, thereby reducing the line width thinner than the line width of the litho pattern. Can be obtained. COR is a gentle isotropic etch, and the etch rate pressure is controlled by parameters such as gas concentration, gas concentration ratio, processing temperature, gas flow rate, gas flow rate ratio, etc. The etching is finished by being saturated (etch stop). Thus, a desired etch rate can be obtained by controlling the saturation point.

  Such COR processing uses a damascene gate process with source / drain diffusion activated annealing and metal suicide that occurs immediately before the dummy gate region that is later removed and replaced with a polysilicon gate region. It is suitable for manufacturing a sub-0.1 μm metal oxide semiconductor field effect transistor device including a thick multi-depletion layer, a source / drain junction formed with a metal silicide layer, and a very low film resistance polygate (for example, Patent Documents). 4).

Japanese Patent Laid-Open No. 08-46013 JP 2001-53131 A JP 2000-150618 A US Pat. No. 6,440,808

  Conventional vacuum processing apparatuses that perform etching processes are required to perform a plurality of processes more efficiently. In addition, since vacuum processing apparatuses that perform COR processing and CVD processing require processing for cooling a heated wafer, it is particularly required to perform a plurality of processing more efficiently. In the conventional vacuum processing apparatus, as described above, the vacuum / atmosphere switching is performed in the load lock chamber, while the load lock chamber includes a transfer arm and a cooling mechanism for cooling the wafer. Inevitably grows, and it takes time to switch between the vacuum and the atmosphere. In addition, since the wafer carried into the load lock chamber is exposed to air convection for a long time due to the switching of the vacuum / atmosphere, there is a possibility that particles that have risen by the convection adhere.

  The objective of this invention is providing the pressure control method of the to-be-processed object processing apparatus which can perform a some process efficiently.

  In order to achieve the above object, a pressure control method for an object processing apparatus according to claim 1 includes a load lock chamber, a COR processing chamber for performing COR processing on the object to be processed, and an object to be processed that has undergone the COR processing. A pressure control method for a target object processing apparatus, comprising: a heat processing chamber for performing heat processing on the substrate; and an atmospheric transfer module for transferring the target object to and from the load lock chamber. A loading step of bringing the object to be processed before COR processing into the load lock chamber from the atmospheric transfer module with the load lock chamber being in an atmospheric state, and evacuating the heat treatment chamber to finish the load lock. A load lock chamber evacuation step for evacuating the chamber to a set pressure, and evacuating the load lock chamber after the load lock chamber reaches the set pressure, A heat treatment chamber evacuation step for evacuating the heat treatment chamber so that a pressure condition of “drock chamber pressure> heat treatment chamber pressure” is satisfied, and the load lock chamber and the heat treatment chamber communicate with each other after the pressure condition is satisfied. And a first communication step.

  The pressure control method for the object processing apparatus according to claim 2 is the pressure control method for the object processing apparatus according to claim 1, wherein the heat treatment chamber is evacuated following the first communication step. A first pressure monitoring step for monitoring the pressure in the heat treatment chamber; a COR treatment chamber exhaust step for evacuating the COR treatment chamber so that a pressure condition of “heat treatment chamber pressure <COR treatment chamber pressure” is satisfied; and the pressure condition And a second communication step of terminating the exhaust of the COR processing chamber when the condition is satisfied and causing the heat treatment chamber and the COR processing chamber to communicate with each other.

  The pressure control method for an object processing apparatus according to claim 3 is the pressure control method for an object processing apparatus according to claim 2, wherein the load lock chamber and the COR processing chamber are provided after the second communication step. The method further includes an inflow step for causing a fluid to flow into the liquid.

  The pressure control method for an object processing apparatus according to claim 4 is the pressure control method for an object processing apparatus according to claim 3, wherein the flow rate of fluid from the load lock chamber to the heat treatment chamber and the COR processing chamber are set. The flow rate of fluid to the heat treatment chamber is equal.

  The pressure control method for the object processing apparatus according to claim 5 is the pressure control method for the object processing apparatus according to any one of claims 2 to 4, wherein the COR process is performed. And a step of evacuating the heat treatment chamber and the COR treatment chamber so that the pressure in the COR treatment chamber is reduced to a voltage removal force for removing the ESC residual charge. .

  In order to achieve the above object, a pressure control method for a target object processing apparatus according to claim 6 includes: a COR processing chamber for performing a COR process on the target object; and a heat treatment for performing a heat treatment on the target object subjected to the COR process. A pressure control step of monitoring the pressure in the heat treatment chamber while exhausting the heat treatment chamber, and a pressure of “heat treatment chamber pressure <COR treatment chamber pressure” A COR processing chamber exhausting step for exhausting the COR processing chamber so that a condition is satisfied, and exhausting the COR processing chamber when the pressure condition is satisfied, and the heat treatment chamber and the COR processing chamber And a communication step for communicating.

  According to the pressure control method for the object processing apparatus according to claim 1, after the load lock chamber communicates with the heat treatment chamber, the heat treatment chamber is exhausted so as to satisfy the condition of “load lock chamber pressure> heat treatment chamber pressure”. Therefore, it is possible to prevent the atmosphere in the heat treatment chamber from entering the load lock chamber.

  According to the pressure control method of the object processing apparatus according to claim 2, the heat treatment chamber is evacuated so as to satisfy the condition of “heat treatment chamber pressure <COR treatment chamber pressure” even after the load lock chamber and the heat treatment chamber are communicated. Therefore, the atmosphere in the heat treatment chamber can be prevented from flowing into the load lock chamber, and the heat treatment chamber is continuously evacuated even after the heat treatment chamber and the COR treatment chamber communicate with each other. It is possible to prevent sneaking into the inside.

  According to the pressure control method for the object processing apparatus according to the third aspect, since the fluid is caused to flow into the load lock chamber and the COR processing chamber, it is possible to prevent the occurrence of convection during the exhaust from the heat treatment chamber.

  According to the pressure control method for the object processing apparatus according to claim 4, since the flow rate of the fluid from the load lock chamber to the heat treatment chamber and the flow rate of the fluid from the COR treatment chamber to the heat treatment chamber are equal, The state can be maintained, and the flow direction of the exhaust gas can be made constant.

  According to the pressure control method of the fifth aspect, after carrying out the COR-treated object to be processed from the COR processing chamber, the heat treatment chamber and the COR processing chamber are evacuated, and the pressure in the COR processing chamber is adjusted to remove the ESC residual charge. Therefore, the ESC charge removal is possible without the atmosphere in the heat treatment chamber flowing into the COR treatment chamber.

  According to the pressure control method of claim 6, by continuously exhausting the heat treatment chamber so as to satisfy the condition of “heat treatment chamber pressure <COR treatment chamber pressure” even after the heat treatment chamber and the COR treatment chamber are communicated with each other. It is possible to prevent the atmosphere in the heat treatment chamber from entering the inside of the COR treatment chamber.

1 is a schematic plan view showing a schematic configuration of a vacuum processing apparatus according to a first embodiment of the present invention. It is a side view which shows schematic structure of the vacuum processing apparatus of FIG. It is a figure which shows the first half of the flow of the conveyance sequence of the to-be-processed object in the vacuum processing apparatus of FIG. It is a figure which shows the flow of the second half following the conveyance sequence shown in FIG. It is a figure which shows the timing chart in the pressure adjustment of the vacuum processing apparatus. It is a schematic plan view which shows schematic structure of the vacuum processing apparatus which concerns on the 2nd Embodiment of this invention. It is a side view which shows schematic structure of the vacuum processing apparatus of FIG. It is a figure which shows the flow of the conveyance sequence of the to-be-processed object in the vacuum processing apparatus 600 of FIG.

  Hereinafter, a vacuum processing apparatus (an object processing apparatus) according to a first embodiment of the present invention will be described with reference to the drawings.

  FIG. 1 is a schematic plan view showing a schematic configuration of a vacuum processing apparatus according to the first embodiment of the present invention. FIG. 2 is a side view showing a schematic configuration of the vacuum processing apparatus of FIG.

  In FIG. 1, a vacuum processing apparatus 100 is connected to and adjacent to a first vacuum processing chamber 10 (first processing chamber) for processing an object to be processed such as a semiconductor wafer, and the first vacuum processing chamber 10. A connected second vacuum processing chamber 30 (second processing chamber) for processing an object to be processed, and a load lock chamber 50 connected to the second vacuum processing chamber 30 so as to communicate with the second vacuum processing chamber 30 in a column and a second column. And an atmospheric transfer module (LoaderModule) 70 connected to the load lock chamber 50 so as to be freely communicated.

Inside the first vacuum processing chamber 10, a mounting table 11 on which a processing object is mounted during processing and a processing object holder 12 for delivering the processing object are arranged. As shown in FIG. 2, a gas supply system 13 for supplying N ₂ gas or the like is connected to the outer upper portion of the first vacuum processing chamber 10, and an exhaust system pressure control valve 14 is attached to the outer lower portion. . The first vacuum processing chamber 10 is attached with a pressure measuring device (not shown) for measuring the pressure in the chamber.

  The side wall of the first vacuum processing chamber 10 is provided with a transfer port (not shown) for loading and unloading the object to be processed. Similarly, a first transfer port (not shown) is also formed in the second vacuum processing chamber 30. The first vacuum processing chamber 10 and the second vacuum processing chamber 30 are connected by a connecting unit 20 at portions where the respective transport ports are formed. The connecting unit 20 includes a gate valve 21 and a heat insulating unit 22 in order to isolate the environment between the first vacuum processing chamber 10 and the second vacuum processing chamber 30.

The second vacuum processing chamber 30 is provided with a mounting table 31 on which a processing object is mounted during processing and a processing object holder 32 for delivering the processing object. As shown in FIG. 2, a gas supply system 33 for supplying N ₂ gas or the like is connected to the outer upper portion of the second vacuum processing chamber 30, and an exhaust system pressure control valve 34 is attached to the outer lower portion. . The second vacuum processing chamber 30 is provided with a pressure measuring device (not shown) for measuring the pressure in the chamber.

  The second vacuum processing chamber 30 is provided with a second transfer port (not shown) in addition to the first transfer port. Similarly, a first transfer port (not shown) is also formed in the load lock chamber 50. The second transfer port of the second vacuum processing chamber 30 and the first transfer port of the load lock chamber 50 are connected by a connecting unit 40 at portions where the transfer ports are formed. Thus, the first vacuum processing chamber 10, the second vacuum processing chamber 30, and the load lock chamber 50 are arranged in a column. The connection unit 40 includes a gate valve 41 and a heat insulating unit 42 in order to isolate the environment between the second vacuum processing chamber 30 and the load lock chamber 50.

  Inside the load lock chamber 50, the object holder 51 that holds the object to be processed for delivery of the object to be processed, and the object holder 51 are connected to the first vacuum processing chamber 10, A transport mechanism 52 (transport arm) that transports the second vacuum processing chamber 30 and the atmospheric transport module 70 is provided. The transport mechanism 52 transports the target object holding portion 51 that holds the target object, so that the target object is moved between the first vacuum processing chamber 10, the second vacuum processing chamber 30, and the atmospheric transport module 70. Can be transported and delivered.

As shown in FIG. 2, a gas supply system 53 that supplies N ₂ gas or the like is connected to the outer upper portion of the load lock chamber 50, and an exhaust system 80 is connected to the outer lower portion. The load lock chamber 50 is provided with a pressure measuring device (not shown) for measuring the indoor pressure.

  The load lock chamber 50 is provided with a second transfer port (not shown) in addition to the first transfer port. A similar transfer port (not shown) is also formed in the atmospheric transfer module 70. The load lock chamber 50 and the atmospheric transfer module 70 are connected by a connecting unit 60 at portions where the transfer ports are formed. The connecting unit 60 includes a door valve 61 and a heat insulating unit 62 in order to isolate the environment between the load lock chamber 50 and the atmospheric transfer module 70.

  Although the configuration of the vacuum processing apparatus 100 has been described above, the number of vacuum processing chambers is not limited to two, the first vacuum processing chamber 10 and the second vacuum processing chamber 30, and three or more vacuum processing chambers are arranged in tandem. It can also be linked.

  In the vacuum processing apparatus 100 described above, a transfer sequence of the object to be processed, which will be described later, is executed. However, when the object to be processed is not normally transferred, the object to be processed is prevented from being illegally processed. The transfer sequence of the processing body needs to be interrupted immediately. Therefore, the vacuum processing apparatus 100 needs to have a function of accurately grasping the position of the object to be conveyed. Therefore, the vacuum processing apparatus 100 includes a plurality of position sensors described below.

  First, the object to be processed provided in the mounting table 31 (or object holder 32), the transport mechanism 52 (or object holder 51), and the load lock chamber 50 that directly contacts the object to be processed. Each of the mounting tables (not shown) for temporary holding includes a position sensor that detects the presence or absence of an object to be processed by the position sensor, and the mounting table 11 in the first vacuum processing chamber 10 has a built-in ESC chuck. The presence or absence of the object to be processed is detected by the state or position sensor. Creating software for detecting the position of the object to be processed from the detected information is an easy matter for those skilled in the art of so-called vacuum processing apparatuses. With such software, for example, the operation of the transport mechanism 52 and the like is performed. A control unit (not shown) that controls the position of the object to be processed conveyed inside the vacuum processing apparatus 100 can be detected.

  Further, the first vacuum processing chamber 10, the second vacuum processing chamber 30, and the load lock chamber 50 are respectively located at positions where the gate valves 21 and 41 and the door valve 61 are sandwiched along the conveyance path of the object to be processed. Position sensor units 90, 91, 92, 93, 94 and 95 are arranged. Each position sensor unit includes three position sensors directed to the outer edge of the object to be processed, such as laser sensors, and each laser sensor is arranged radially toward the outer edge or corresponds to the outer edge of the object to be processed. In addition to detecting the position of the object to be processed, the center position of the object to be processed is also detected.

  The control unit detects a first relative positional relationship between the center position of the object to be processed (hereinafter referred to as “initial position”) in the load lock chamber 70 before transport and the center position of the mounting tables 11 and 31. The transport path of the object to be processed is determined based on the detected first relative positional relationship, the object to be processed is transported along the determined transport path, and transported to the mounting tables 11 and 31. The second relative positional relationship between the center position of the object to be processed and the initial position is detected, and the object to be processed on the mounting tables 11 and 31 is detected based on the difference between the first and second relative positional relations. Correct the position. Thereby, while being able to set the conveyance path | route to each mounting base short, a to-be-processed object can be mounted in the exact position with respect to the mounting bases 11 and 31, and the efficiency of a conveyance operation | work is improved. Therefore, a plurality of processes can be performed efficiently.

  The transport mechanism 52 is a transport arm having a multi-joint arm such as a scalar type single pick type or a scalar type twin pick type, and a connection pulley is arranged on the base of the transfer arm, and the connection pulley is connected to the joint of the arm via a timing belt. It is connected to a support pulley disposed in the section, and transmits rotational driving force to the support pulley. The connecting pulley is also connected to a rotation angle pulley of an encoder that detects the rotation angle of the arm via another timing belt.

  The encoder is electrically stored with the rotation start position of the rotation angle pulley, that is, the movement start position of the transfer arm as the origin, while the rotation angle of the rotation angle pulley driven by the other timing belt is set as the rotation angle. Whether the movement distance of the transfer arm is detected by detecting it in the form of a digital signal by a sensor, and whether the detected movement distance is accurately carried out, for example, positioning of the object to be processed It is output as teaching data used for judgment.

  The vacuum processing apparatus 100 compares the position of the object to be processed detected by the position sensor with the teaching data output from the encoder, thereby positioning the object to be processed, in particular, positioning of the object to be processed on the mounting tables 11 and 13. It is determined whether or not is correctly performed.

  Further, the transport arm as the transport mechanism 52 includes at least two arm-shaped members, and the two arm-shaped members are rotatably connected to each other, and the other arm of the two arm-shaped members is the other one. A workpiece holding unit 51 is connected to the end. And the to-be-processed object holding | maintenance part 51 rotates in parallel with the surface of a to-be-processed object centering on the other end in one arm-shaped member, and one arm-shaped member rotates in parallel with the said surface centering on one end, and The other arm-shaped member rotates around the other end in parallel with the surface. As a result, the object to be processed can be transferred to any position in the second vacuum processing chamber 30 and the first vacuum processing chamber 10 along any transfer path, and the efficiency of transfer work can be improved. Therefore, a plurality of processes can be performed efficiently.

  Further, the above-described two arm-shaped members and the object-to-be-processed holding unit 51 rotate in cooperation so as to move the object to be processed along an arbitrary conveyance path, for example, the arrangement direction of the mounting tables 11 and 31. Thereby, the conveyance path | route of a to-be-processed object can be shortened further, and work efficiency can be improved more.

  In addition, the workpiece holder 51 rotates on the mounting tables 11 and 31 while holding the workpiece so that the position of the orientation flat (reference surface) of the wafer as the workpiece is aligned with a predetermined position. Thereby, the position of the orientation flat of the wafer can be easily adjusted to a predetermined position with respect to the mounting tables 11 and 31, and the working efficiency can be further improved.

  Next, an object processing method executed by the vacuum processing apparatus 100 and an object transfer sequence in the method will be described.

  FIG. 3 is a diagram showing the first half of the flow of the sequence of conveying the object to be processed in the vacuum processing apparatus 100 of FIG. FIG. 4 is a diagram illustrating the latter half of the flow following the conveyance sequence illustrated in FIG. 3.

  In the following description, the vacuum processing apparatus 100 performs COR (Chemical Oxide Removal) processing and PHT (Post Heat Treatment) processing (heat treatment) instead of performing conventional etching processing (dry etching, wet etching) on an object to be processed. Take as an example. The COR process is a process in which a gas molecule is chemically reacted to the oxide film of the object to be processed to adhere a product, and the PHT process is a chemical reaction of the COR process by heating the object to be subjected to the COR process. In this process, the product generated on the object to be processed is vaporized and thermally oxidized (Thermal Oxidation) to be removed from the object to be processed.

Here, in the COR process applied to the object to be processed having the base substrate and the predetermined layer formed on the substrate, the polysilicon exposed after removing the polysilicon layer in the gate region in the predetermined layer. A silicon or oxide layer (oxide film) is selectively etched. In this COR process, the etching rate is controlled so that the progress of the etching stops at the surface of the substrate. The COR process also includes a vapor phase chemical oxide removal process (Vaporphase Chemical Oxide Removal) that can be realized at low pressure by using HF and NH ₃ vapors as etchant gases to form gate openings. Process).

  Hereinafter, the first vacuum processing chamber 10 is a COR processing chamber 10 that performs COR processing on a target object, and the second vacuum processing chamber 30 is a PHT processing chamber 30 that performs PHT processing on a target object. Here, the gas supply system 13 in the COR processing chamber 10 is preferably a shower head. In this case, the introduced gas can be uniformly supplied into the COR processing chamber 10.

  The volume of the COR processing chamber 10 is about 30 liters, the internal pressure is 0.5-30 mTorr, the temperature is 15-50 ° C., and the introduced gas is F-containing reactive gas, reducing gas, inert gas Gas, etc. The inert gas is a gas such as Ar, He, Ne, Kr, or Xe, but Ar gas is preferable.

The volume of the PHT processing chamber 30 is about 50 liters, and the internal pressure is reduced by two stages to a pressure at the time of the process different from the pressure at the time of transfer. In addition to the two-stage decompression, a two-stage or more multi-stage decompression may be used depending on the process conditions. The internal temperature is 80 to 200 ° C., the vacuum pump exhaust speed is 1600 to 1800 L / min (at 200 mTorr), and 0 to 100 L / min at the end of the process (at 0.5 mTorr), When the degree of vacuum in the PHT process chamber 30 is achieved, the pump does not operate. The gas introduced into the PHT processing chamber 30 is a gas for preventing particle scattering and cooling, and is a downflow gas (N ₂ ).

  As shown in (1) of FIG. 3, first, the workpiece W1 is in the atmospheric transfer module 70, and the gate valves 21 and 41 of the connection units 20 and 40 are closed, so that the COR processing chamber 10 and The PHT processing chamber 30 is isolated. On the other hand, the door valve 61 of the connection unit 60 is opened. In addition, the to-be-processed object W1 has the predetermined pattern formed in the surface by the process already existing. As shown in (2), the first workpiece W1 is carried into the load lock chamber 50 from the atmospheric transfer module 70, and the door valve 61 of the connecting unit 60 is closed. Next, the exhaust system pressure control valve 34 is closed, and the load lock chamber 50 is evacuated. After the evacuation of the load lock chamber 50 is completed, the exhaust system pressure control valve 34 is opened and the gate valve 41 of the connection unit 40 is opened as shown in (3). Thereafter, the gate valve 21 of the connecting unit 20 is opened.

  Next, as shown in (4), the workpiece W1 held by the workpiece holder 51 is carried into the COR processing chamber 10 by the transport mechanism 52, and as shown in (5), the workpiece holder 51 and After the transport mechanism 52 returns to the load lock chamber 50, the gate valves 21 and 41 are closed and the COR process is started. During this process, the load lock chamber 50 is opened to the atmosphere.

  Next, as shown in (6) and (7), the second workpiece W2 is carried into the load lock chamber 50 from the atmospheric transfer module 70, the door valve 61 is closed, and the exhaust system pressure control valve 34 is closed. The evacuation of the load lock chamber 50 is started. After the evacuation of the load lock chamber 50 is completed, the exhaust system pressure control valve 34 and the gate valve 41 are opened and the end of the COR processing is awaited.

  As shown in (8) and (9), after the COR processing is completed, the gate valve 21 is opened, and the workpiece W1 is moved from the COR processing chamber 10 to the PHT processing chamber 30.

  Next, as shown in (10) and (11), the workpiece W2 is moved from the load lock chamber 50 to the COR processing chamber 10, and as shown in (12), the workpiece holder 51 and the transport mechanism 52 are moved. After returning to the load lock chamber 50, the gate valves 21 and 41 are closed, the COR processing chamber 10 starts the COR processing, and the PHT processing chamber 30 starts the PHT processing.

  After the PHT process is completed, the gate valve 41 is opened as shown in (13), and the workpiece W1 in the PHT process chamber 30 is moved to the load lock chamber 50.

  Next, as shown in (14) to (16), after the gate valve 41 is closed and the load lock chamber 50 is opened to the atmosphere, the object to be processed W1 in the load lock chamber 50 and the atmospheric transfer module 70 are waited. The third processed object W3 is replaced. Thereafter, the load lock chamber 50 is evacuated as shown in (17). Further, the gate valve 41 is opened and the process waits until the COR process for the workpiece W2 is completed. The transfer sequence is accompanied by pressure control. The above is repeated until the lot ends.

  In each of the steps (1) to (16) in the conveyance sequence described above, the determination of the positioning of the object to be processed based on the comparison between the position of the object to be processed and the teaching data detected by the position sensor described above is executed. If positioning of the object to be processed is not accurately performed in a certain step, the conveyance of the object to be processed is interrupted and the step and the position of the object to be processed in the step are stored. The stored data may be used as basic data for the reprocessing recipe.

  The above description is an example of the transfer method. For example, the load lock chamber 50 → the first vacuum processing chamber 10 → the load lock chamber 50, the load lock chamber 50 → the second vacuum processing chamber 30 → the load lock chamber 50, the load A transfer pattern such as the lock chamber 50 → the second vacuum processing chamber 30 → the first vacuum processing chamber 10 → the load lock chamber 50 is also possible.

  Furthermore, reciprocation between the first vacuum processing chamber 10 ← → the second vacuum processing chamber 30 is also possible as required. By reciprocating the object to be processed between the COR processing chamber 10 (first vacuum processing chamber 10) and the PHT processing chamber 30 (second vacuum processing chamber 30), and repeating the COR processing and PHT processing. Theoretically, the line width of the pattern formed on the object to be processed can be made thinner. Accordingly, it is possible to cope with pattern miniaturization.

  According to the vacuum processing apparatus according to the first embodiment of the present invention, the transport mechanism 52 carries the workpiece W1 into the load lock chamber 50, and after the evacuation of the load lock chamber 50 is completed, the workpiece is processed. The body W1 is carried into the COR processing chamber 10, and after the COR processing is completed, the processing target W1 is moved from the COR processing chamber 10 to the PHT processing chamber 30, and after the PHT processing is completed, the processing target W1 in the PHT processing chamber 30 is completed. Is transferred to the load lock chamber 50, and the workpiece W1 is carried out to the atmospheric transfer module 70. Therefore, the operation of carrying the workpiece W1 between the plurality of processing chambers can be simplified, and at least one COR can be obtained. A plurality of processes including processes can be performed efficiently.

  Moreover, according to the vacuum processing apparatus which concerns on the 1st Embodiment of this invention, when the following process conditions are satisfy | filled, two continuous processes are made efficient, without making the 1st vacuum processing chamber 10 stand by. Can be done well.

Processing time in the first vacuum processing chamber 10: First processing time Processing time in the second vacuum processing chamber 30: Second processing time Processed between the load lock chamber 50 and the second vacuum processing chamber 30 Body replacement time: first replacement time Replacement time between load lock chamber 50 and atmospheric transfer module 70: second replacement time Process conditions: (first processing time) ≧ (second processing time) + (First exchange time) + (second exchange time) + (supply / exhaust time of the load lock chamber 50)
The configuration of the first vacuum processing chamber 10 and the second vacuum processing chamber 30 is not limited to the above example, and is configured by combining necessary modules such as an etching system, a film formation system, a coating system, a measurement system, and a heat treatment system. can do.

  In addition, when the first vacuum processing chamber 10 and the second vacuum processing chamber 30 are constantly in vacuum, the second vacuum processing chamber 30 and the load lock chamber 50 are not simultaneously evacuated. The exhaust system 80 of the vacuum processing chamber 30 and the load lock chamber 50 can be shared.

  Next, pressure adjustment during the operation of the vacuum processing apparatus 100 will be described.

  FIG. 5 is a diagram illustrating a timing chart in the pressure adjustment of the vacuum processing apparatus 100.

  1) While the PHT processing chamber 30 is evacuated, the load lock chamber 50 is brought into the atmospheric state, and the object to be processed before the COR processing is carried into the load lock chamber 50 from the atmospheric transfer module 70 and then attached to the PHT processing chamber 30. The exhaust system pressure control valve 34 (hereinafter referred to as PHT exhaust valve 34) is closed, and evacuation of the load lock chamber 50 is started.

  After the load lock chamber 50 reaches a set pressure, the exhaust valve (not shown; LLM exhaust valve) of the load lock chamber 50 is closed and the PHT exhaust valve 34 is opened, and “pressure in the load lock chamber 50> PHT processing chamber 30 ”and after confirming the completion of the control, the gate valve 41 (hereinafter referred to as PHT side gate valve 41) between the load lock chamber 50 and the PHT processing chamber 30 is opened, and the load lock chamber 50 and the PHT are connected. The processing chamber 30 is communicated.

Even after the PHT side gate valve 41 is opened, the PHT exhaust valve 34 is continuously opened to exhaust the PHT atmosphere into the load lock chamber 50 by exhausting. It is also possible to actively flow fluid (N ₂ ) from the load lock chamber 50 to prevent convection.

  2) The pressure in the PHT processing chamber 30 is monitored, and the pressure in the COR processing chamber 10 is controlled so that “pressure in the PHT processing chamber 30 <pressure in the COR processing chamber 10”.

  When “the pressure in the PHT processing chamber 30 <the pressure in the COR processing chamber 10”, the exhaust system pressure control valve 14 (hereinafter referred to as the COR exhaust valve 14) attached to the COR processing chamber 10 is closed, and the PHT processing chamber 30 -The gate valve 21 between the COR processing chambers 10 (hereinafter, the COR side gate valve 21) is opened.

Even after the COR-side gate valve 21 is opened, the PHT exhaust valve 34 is continuously opened and exhausted to prevent the atmosphere in the PHT processing chamber 30 from flowing into the COR processing chamber 10. Further, it is possible to actively flow a fluid (N ₂ ) from the COR processing chamber 10 to prevent the occurrence of convection.

  3) Assuming that the PHT side gate valve 41 is opened in the sequence described in 1) above and the load lock chamber 50 and the PHT processing chamber 30 are one module, the COR side gate valve in the sequence described in 2) above. 21 is opened. Even after the PHT side gate valve 41 and the COR side gate valve 21 are opened, the PHT exhaust valve 34 is continuously opened and exhausted, so that the atmosphere in the PHT processing chamber 30 is changed to the COR processing inside the load lock chamber 50. It is possible to prevent sneaking into the interior of the chamber 10.

In addition, it is possible to prevent the occurrence of convection by causing the fluid (N ₂ ) to actively flow into the load lock chamber 50 and the COR processing chamber 10. By setting “flow rate from the chamber 50 = flow rate from the COR processing chamber 10”, it is possible to prevent back flow.

  4) In the sequence described in 3) above, the inside of the COR processing chamber 10 is discharged using the PHT exhaust system 34 in order to remove the ESC residual charge after the processed object subjected to the COR processing is carried out of the COR processing chamber 10. Control to become pressure. Thereby, the ESC charge removal can be performed without the atmosphere in the PHT processing chamber 30 flowing into the COR processing chamber 10.

  In addition, since the processing in the PHT processing chamber 30 and the COR processing chamber 10 can be continuously performed in a vacuum state at all times, the oxide film of the object to be processed after COR absorbs moisture in the atmosphere and causes a chemical reaction. You can prevent it from happening.

  In the above-described transfer method, a product wafer (product wafer) is transferred as an object to be processed. However, the object to be transferred is not limited to a product wafer, and the operation of each processing chamber and device of the vacuum processing apparatus 100 is performed. It may be a dummy wafer for inspecting the above, or another dummy wafer used for seasoning each processing chamber.

  Next, a vacuum processing apparatus according to a second embodiment of the present invention will be described with reference to the drawings.

  FIG. 6 is a schematic plan view showing a schematic configuration of a vacuum processing apparatus according to the second embodiment of the present invention. FIG. 7 is a side view showing a schematic configuration of the vacuum processing apparatus of FIG.

  In FIG. 6, a vacuum processing apparatus 600 includes a vacuum processing chamber 601 that performs vacuum processing on an object to be processed, and an atmospheric process that communicates with the vacuum processing chamber 601 and that is connected in a column and performs other processing on the object to be processed. A chamber 602, a load lock chamber 603 that is interposed between the vacuum processing chamber 601 and the atmospheric processing chamber 602, and is connected to the vacuum processing chamber 601 and the atmospheric processing chamber 602 at a position in line with the chamber 602; And an atmospheric transfer module 604 connected to the chamber 602 so as to be freely communicated.

  In the vacuum processing chamber 601, a lower electrode to which a high-frequency voltage for generating plasma is applied in the vacuum processing chamber 601 and a base for mounting an object to be processed are placed. A mounting table 605, a heater 606 that is built in the mounting table 605 and that heats an object to be processed mounted on the mounting table 605, a supply system that supplies reaction gas into the vacuum processing chamber 601, and a mounting as a lower electrode Plasma or products generated in the vacuum processing chamber 601 having a shower head 607 also serving as an upper electrode that generates a high-frequency electric field in cooperation with the mounting table 605, and a valve (not shown) that can be freely opened and closed. A discharge port 608 for discharging the residue and a pressure measuring device (not shown) for measuring the pressure in the room are arranged. The inside of the vacuum processing chamber 601 is always in a vacuum state, and here, vacuum processing can be performed.

  The side wall of the vacuum processing chamber 601 is provided with a transfer port (not shown) for loading and unloading the object to be processed. A similar transfer port (not shown) is also formed in the side wall of the load lock chamber 603 disposed adjacent to the vacuum processing chamber 601. The vacuum processing chamber 601 and the load lock chamber 603 are connected by a connecting unit 611 at portions where the respective transport ports are formed. The connecting unit 611 includes a gate valve 612 and a heat insulating unit 613 in order to isolate the environment between the vacuum processing chamber 601 and the load lock chamber 603.

  Inside the atmospheric processing chamber 602, a mounting table 609 for mounting the target object and a holder 610 for holding the target object mounted on the mounting table 609 are disposed. The mounting table 609 incorporates a cooling circuit (not shown) as a cooling mechanism through which the refrigerant can circulate, and cools the object to be processed. Further, the atmosphere processing chamber 602 is always open to the atmosphere, and the inside thereof is in an atmospheric pressure state. Therefore, the atmospheric processing chamber 602 can perform a cooling process on a target object heated by a CVD process or the like in an atmospheric pressure state.

In addition to the cooling circuit described above, the atmospheric processing chamber 602 includes an inlet for introducing a downflow gas for cooling, for example, an inert gas such as N ₂ , Ar, or He gas, into the interior. May be.

  A transfer port (not shown) for carrying in / out the object to be processed is formed in the side wall of the atmospheric processing chamber 602. In addition to the above-described transfer port, another transfer port (not shown) is similarly formed in the side wall of the load lock chamber 603 disposed adjacent to the atmospheric treatment chamber 602. The atmospheric processing chamber 602 and the load lock chamber 603 are connected to each other by a connecting unit 614 where the transfer ports are formed. As a result, the vacuum processing chamber 601, the load lock chamber 603, and the atmospheric processing chamber 602 are arranged in order. The connection unit 614 includes a gate valve 615 and a heat insulation unit 616 in order to isolate the environment between the atmosphere processing chamber 602 and the load lock chamber 603.

  Inside the load lock chamber 603, the object holder 617 that holds the object to be processed in order to deliver the object to be processed, and the object holder 617 include the vacuum processing chamber 601 and the atmospheric treatment. A transport mechanism 618 for transporting the chamber 602 is provided. By transporting the target object holding portion 617 holding the target object by the transport mechanism 618, the target object can be transported between the vacuum processing chamber 601 and the atmospheric processing chamber 602 and delivered. Further, the volume inside the load lock chamber 603 is set to a volume that can secure a necessary minimum space that does not hinder the operation of the transport mechanism 618.

As shown in FIG. 7, a pipe 619 that communicates the inside and the outside of the load lock chamber 603 is disposed at the lower outer portion of the load lock chamber 603, and the pipe 619 is provided with a vacuum pump 623 such as a turbo molecular pump. And a valve 624 that can freely communicate and block the inside of the load lock chamber 603 and the vacuum pump 623. The load lock chamber 603 is attached with a pressure measuring device (not shown) for measuring the indoor pressure. Further, a gas supply system 620 for supplying N ₂ gas or the like is connected to the lower portion outside the load lock chamber 603. Therefore, the load lock chamber 603 can be switched between vacuum / atmosphere inside the pipe 619 and the gas supply system 620.

  Inside the atmospheric transfer module 604, a target object holder 625 and a transfer mechanism 626 similar to the target object holder 617 and the transfer mechanism 618 described above are disposed. Then, the object to be processed is transferred between the carrier (not shown) of the object to be processed attached to the atmospheric transfer module 604 and the atmospheric processing chamber 602 by the object holding unit 625 and the transfer mechanism 626, and delivered. Can do.

  A transfer port (not shown) is formed in the side wall of the atmospheric transfer module 604. In addition to the above-described transfer port, another transfer port (not shown) is similarly formed in the side wall of the atmospheric processing chamber 602 disposed adjacent to the atmospheric transfer module 604. The atmospheric transfer module 604 and the atmospheric processing chamber 602 are connected by a connecting unit 627 at portions where the transfer ports are formed.

  Although the configuration of the vacuum processing apparatus 600 has been described above, the number of processing chambers is not limited to two, that is, the vacuum processing chamber 601 and the atmospheric processing chamber 602, and it is possible to connect three or more processing chambers in tandem. This is the same as the vacuum processing apparatus 100 according to the first embodiment of the invention.

  Next, an object processing method executed by the vacuum processing apparatus 600 and an object transfer sequence in the method will be described.

  FIG. 8 is a diagram showing a flow of a conveyance sequence of an object to be processed in the vacuum processing apparatus 600 of FIG.

  In the following description, the vacuum processing apparatus 600 takes an example of performing a CVD process and a cooling process on an object to be processed.

  Hereinafter, the vacuum processing chamber 601 performs a CVD process on the target object as the CVD processing chamber 601, and the atmospheric processing chamber 602 performs a cooling process as an atmospheric process on the target process. In the drawing, the white of the connecting unit represents the open state of the gate valve, and the black represents the closed state of the gate valve, as in FIGS.

  First, as shown in (1) of FIG. 8, first, the object to be processed W1 in the atmospheric transfer module 604 is carried into the atmospheric processing chamber 602. At this time, the gate valve 612 is in a closed state, and the load lock chamber 603 and the CVD processing chamber 601 are isolated. On the other hand, the gate valve 615 is in an open state, and the atmospheric processing chamber 602 and the load lock chamber 603 communicate with each other.

  Next, as shown in (2), the object to be processed W1 is carried into the load lock chamber 603 from the atmospheric processing chamber 602, and then the gate valve 615 is closed as shown in (3). After opening the valve 624, the vacuum pump 623 is operated to evacuate the load lock chamber 603.

  Then, after opening the gate valve 612 as shown in (4), the workpiece W1 held by the workpiece holder 617 is carried into the CVD processing chamber 601 by the transfer mechanism 618, and shown in (5). As described above, after the object holder 617 and the transport mechanism 618 return to the load lock chamber 603, the gate valve 612 is closed and the object W1 is subjected to the CVD process in the CVD process chamber 601.

  Next, as shown in (6), after the CVD process is completed, the gate valve 612 is opened, and the workpiece W1 subjected to the CVD process is carried out from the CVD process chamber 601 to the load lock chamber 603.

Next, as shown in (7), after the workpiece W1 is carried out to the load lock chamber 603, the gate valve 612 is closed, the valve 624 in the pipe 619 is closed, and the gas supply system 620 is connected. Supply of N ₂ gas or the like is started and the load lock chamber 603 is opened to the atmosphere. After the internal pressure of the load lock chamber 603 reaches atmospheric pressure, as shown in (8), after opening the gate valve 615, the workpiece W1 is carried out to the atmospheric processing chamber 602 by the transport mechanism 618. Then, the object to be processed W1 is placed on the placing table 609 and further held by the holder 610.

  Next, as shown in (9), the mounting table 609 cools the workpiece W1, and when the workpiece W1 is cooled to a predetermined temperature (about 70 ° C.), as shown in (10), The processing body W1 is carried out to the atmospheric transfer module 604.

  Then, the vacuum processing apparatus 600 repeats the above transfer sequence until the end of the lot.

  Also in each step of (1) to (10) in the transport sequence described above, as described in the first embodiment of the present invention, the position of the workpiece detected by the position sensor and the teaching data The determination of the positioning of the object to be processed based on the comparison may be executed, and if the positioning of the object to be processed is not accurately performed in a certain step, the conveyance of the object to be processed is interrupted and the step is performed. And the position of the object to be processed in this step may be stored, and the stored data may be used as basic data for the reprocessing recipe.

  Also in the vacuum processing apparatus according to the second embodiment, as described in the first embodiment, the initial position and the center of the mounting tables 605 and 609 are based on the information detected by the position sensor. A first relative positional relationship with the position is detected, a transport path of the object to be processed is determined based on the detected first relative positional relationship, and the transport path is determined along the determined transport path. The second relative positional relationship between the center position and the initial position of the target object conveyed to the mounting tables 605 and 609 is detected, and the first and second relative positional relations are detected. Based on the difference, the position of the object to be processed on the mounting tables 605 and 609 may be corrected, whereby the same effect as described above can be achieved.

  Further, the transport mechanism 618 and the target object holding unit 617 may have the same configuration as the transport mechanism 52 and the target object holding unit 51 in the first embodiment, and the effects described above are also provided. The same effect can be achieved.

  The above description is an example of the transfer sequence. In other transfer sequences, the vacuum processing chamber 601 ← → the atmospheric processing chamber 602 can be reciprocated as necessary. The object W1 is formed on the surface of the object W1 by reciprocating the CVD process chamber 601 (vacuum process chamber 601) and the atmospheric process chamber 602 and repeating the CVD process and the cooling process. Variations in the thickness of the thin film can be suppressed.

  Further, the configurations of the vacuum processing chamber 601 and the atmospheric processing chamber 602 are not limited to the above example, and are configured by combining necessary modules according to an etching system, a film forming system, a coating and developing system, a measurement system, a heat treatment system, and the like. be able to.

  According to the vacuum processing apparatus of the second embodiment of the present invention, the CVD process chamber 601 that performs the CVD process on the workpiece W1 and the atmospheric process chamber 602 that performs the cooling process on the workpiece W1 are connected to each other. The load lock chamber 603 is interposed between the CVD processing chamber 601 and the atmospheric processing chamber 602, and is disposed in a row with these processing chambers and is connected to each other so that they can communicate with each other. It is possible to simplify the operation of carrying in and transporting the object to be processed W1 between the 601 and the atmospheric processing chamber 602, so that a plurality of processes including the CVD process and the cooling process can be efficiently performed. The cooling process after a process can be performed efficiently.

  In addition, since the cooling process in the atmospheric processing chamber 602 is always performed in the atmospheric pressure state, there is no need to perform the vacuum / atmosphere switching in the atmospheric processing chamber 602, and the cooling process can be performed in a short time, and the vacuum Since the load lock chamber 603 that executes the switching of / atmosphere does not need to be provided with a cooling mechanism, its volume can be reduced, so that the switching of vacuum / atmosphere can be performed in a short time. As a result, a plurality of processes including the cooling process of the workpiece W1 and the vacuum / atmosphere switching can be performed more efficiently.

  For example, when the vacuum / atmosphere switching and the cooling process are performed simultaneously as in the conventional vacuum processing apparatus, the load lock chamber needs to include not only the transfer mechanism but also the cooling mechanism. Although it takes about 126 seconds for the vacuum / atmosphere switching and cooling processing, the vacuum / atmosphere switching and cooling processing are performed as in the vacuum processing apparatus according to the second embodiment of the present invention described above. When executed in different processing chambers, the load lock chamber only needs to perform the vacuum / atmosphere switching, and the atmospheric processing chamber only needs to perform the cooling process, the volume of the load lock chamber is reduced, and the vacuum / atmosphere switching is performed. It only takes about 20 seconds and only about 15 seconds for the cooling process, so it takes only about 35 seconds for the vacuum / atmosphere switching and the cooling process.

  Furthermore, since the workpiece W1 carried into the load lock chamber 603 is not exposed to air convection for a long time due to the switching of the vacuum / atmosphere, there is a risk that particles swollen by the convection will adhere. Can be eliminated.

  Moreover, according to the to-be-processed object processing method which concerns on the 2nd Embodiment of this invention, the switching of the vacuum / atmosphere and the cooling process after the CVD process of the to-be-processed object W1 are performed in the load lock chamber 603 and the atmospheric processing chamber 602. Since each process is assigned, the time required for each process can be shortened, so that a plurality of processes including a vacuum / atmosphere switching and a cooling process can be efficiently performed, and the CVD process of the workpiece W1 is performed. After that, the cooling process in the atmospheric processing chamber 602 is executed through the unloading process to the load lock chamber 603, the vacuum / atmosphere switching process in the load lock chamber 603, and the unloading process to the atmosphere processing chamber 602. For example, when the temperature of the object to be processed W1 immediately after the CVD process is about 650 ° C., the object to be processed after being carried out to the atmospheric processing chamber 602 is cooled. Body temperature W1 is approximately 400 ° C.. As a result, the cooling process of the object to be processed W1 in the air processing chamber 602 can be performed efficiently.

  In the above-described vacuum processing apparatus according to the second embodiment, the object to be processed is subjected to the CVD process, but the vacuum processing that the vacuum processing apparatus applies to the object to be processed is not limited to this, and involves heat treatment. It is needless to say that any vacuum processing can be performed as long as the vacuum processing is performed, and the above-described effects can be obtained in this case.

10 First vacuum processing chamber (COR processing equipment)
12, 32 Object holder 13, 33, 53 Gas supply system 14, 34 Exhaust system pressure control valve 20, 40, 60, 611, 614, 627 Connection unit 21, 41, 612, 615 Gate valve 22, 613 616 Heat insulation unit 30 Second vacuum processing chamber (heat treatment chamber)
50, 603 Load lock chamber 51, 617 Object holder 52, 618, 626 Transport mechanism 61 Door valve 70, 604 Atmospheric transport module 80 Exhaust system 90, 91, 92, 93, 94, 95 Position sensor unit 100, 600 Vacuum Processing equipment 601 Vacuum processing chamber (CVD processing chamber)
602 Atmospheric treatment chamber 605, 609 Mounting table 606 Heater 607 Shower head 608 Discharge port 610 Holder 619 Pipe 620 Gas supply system 623 Vacuum pump 624 Valve W1, W2, W3

Claims (6)

A load lock chamber, a COR processing chamber that performs COR processing on the object to be processed, a heat treatment chamber that heat-treats the object to be processed that has undergone COR processing, and the object to be processed are carried in and out of the load lock chamber. An atmospheric transfer module, and a pressure control method for a target object processing apparatus,
A loading step of bringing the object to be processed before the COR process into the load lock chamber from the atmospheric transfer module while the load lock chamber is in an atmospheric state during evacuation of the heat treatment chamber;
A load lock chamber evacuation step for evacuating the heat treatment chamber to evacuate the load lock chamber to a set pressure; and
After the load lock chamber reaches the set pressure, evacuation of the load lock chamber is terminated, and the heat treatment chamber is evacuated so that the pressure condition of “load lock chamber pressure> heat treatment chamber pressure” is satisfied. A vacuuming step;
A pressure control method for an object processing apparatus, comprising: a first communication step for communicating the load lock chamber and the heat treatment chamber after the pressure condition is satisfied. Following the first communication step, a first pressure monitoring step of monitoring the pressure in the heat treatment chamber while exhausting the heat treatment chamber;
COR processing chamber exhausting step for exhausting the COR processing chamber so that the pressure condition of “heat treatment chamber pressure <COR processing chamber pressure” is satisfied;
2. The second communication step of ending exhaust of the COR processing chamber when the pressure condition is satisfied, and causing the heat treatment chamber and the COR processing chamber to communicate with each other. Pressure control method for an object processing apparatus.   3. The pressure control method for an object processing apparatus according to claim 2, further comprising an inflow step for allowing a fluid to flow into the load lock chamber and the COR processing chamber after the second communication step.   4. The pressure control method for an object processing apparatus according to claim 3, wherein a flow rate of fluid from the load lock chamber to the heat treatment chamber is equal to a flow rate of fluid from the COR treatment chamber to the heat treatment chamber.   After carrying out the COR-treated object to be processed from the COR processing chamber, the heat treatment chamber and the COR processing chamber are evacuated so that the pressure in the COR processing chamber becomes a voltage removal force for removing the ESC residual charge. The pressure control method for an object processing apparatus according to claim 2, further comprising an exhaust step. A pressure control method for a target object processing apparatus, comprising: a COR processing chamber that performs a COR process on a target object; and a heat treatment chamber that performs a heat treatment on the target object that has undergone the COR process,
A pressure monitoring step for monitoring the pressure in the heat treatment chamber while exhausting the heat treatment chamber;
COR processing chamber exhausting step for exhausting the COR processing chamber so that the pressure condition of “heat treatment chamber pressure <COR processing chamber pressure” is satisfied;
And a communication step of terminating the exhaust of the COR processing chamber when the pressure condition is satisfied and communicating the heat treatment chamber and the COR processing chamber. Control method.

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