JP2010132510A - Method for producing silicon carbide single crystal - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for producing a silicon carbide single crystal, by which the deterioration of crystallinity and the occurrence of crystal defects such as spiral dislocations in the silicon carbide single crystal can be further suppressed while continuously growing a seed crystal. <P>SOLUTION: In the method for producing a silicon carbide single crystal, a graphite crucible 10 accommodating a seed crystal 70 containing silicon carbide and a raw material 80 for sublimation arranged at a lower part of the seed crystal 70 and used for growing the seed crystal 70; a heating part 30 arranged in the periphery of the side part of the graphite crucible 10 and heating the graphite crucible 10 by using an induction heating coil 30a; and a heat insulating member 12 arranged between the heating part 30 and the graphite crucible 10 are used. The method includes a process for reducing the thickness of the heat insulating member 12 in the side direction of the graphite crucible 10 as the seed crystal 70 accommodated in the graphite crucible 10 grows, in a side view of the graphite crucible 10. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a method for producing a silicon carbide single crystal using a crucible containing a seed crystal and a sublimation raw material, and a heating unit for heating the crucible using an induction heating coil.

  2. Description of the Related Art Conventionally, a silicon carbide single crystal production apparatus for producing a silicon carbide single crystal (hereinafter abbreviated as “single crystal” as appropriate) using a crucible containing a seed crystal formed of silicon carbide and a sublimation raw material has been widely used. It is used. In such a silicon carbide single crystal manufacturing apparatus, a powdery sublimation raw material is placed on the bottom of the crucible, and a single crystal seed crystal is placed on the top of the crucible. An induction heating coil for heating the crucible is disposed around the outer periphery of the crucible.

  In a silicon carbide single crystal manufacturing apparatus having such a structure, in order to suppress the growth of silicon carbide polycrystals and crystals containing crystal defects such as screw dislocations while continuously growing the single crystal on the seed crystal. A method of cooling only the temperature in the vicinity of the seed crystal to the crystallization temperature is known (for example, Patent Document 1). Note that the screw dislocation indicates a dislocation formed by shifting the crystal plane in parallel to an arbitrary line in the crystal.

  Specifically, an induction heating coil is disposed around the side of the crucible corresponding to the position where the seed crystal is disposed. According to such a method, only the upper part in the crucible in which the seed crystal is disposed can be cooled to the crystallization temperature due to the influence of heat radiation from the upper part of the crucible.

Therefore, the silicon carbide single crystal manufacturing apparatus having such a structure can suppress the growth of silicon carbide polycrystals and crystals containing crystal defects such as screw dislocations while continuing the growth of the seed crystal.
Japanese Patent Laid-Open No. 2002-255893 (page 4, FIG. 2)

  However, the conventional silicon carbide single crystal manufacturing apparatus described above has the following problems. That is, as the seed crystal grows, the distance from the upper part of the crucible to the lower end of the silicon carbide single crystal on which the seed crystal has grown gradually increases, and the influence of heat dissipation from the upper part of the crucible decreases, and the silicon carbide single crystal Approaches the bottom of the crucible in which the sublimation raw material is placed. For this reason, the temperature near the lower end of the silicon carbide single crystal becomes high, and the difference from the temperature near the sublimation raw material becomes small. Therefore, the growth rate of the seed crystal is lowered, and there are problems that cause crystal defects such as a decrease in crystallinity and screw dislocation.

  Therefore, the present invention has been made in view of such a situation, and can further suppress crystal defects such as a decrease in crystallinity of a silicon carbide single crystal and screw dislocations while continuously growing a seed crystal. It aims at providing the manufacturing method of a silicon carbide single crystal.

  In order to solve the above-described problems, the present invention has the following features. First, the first feature of the present invention is that a seed crystal containing silicon carbide (seed crystal 70) and a sublimation material (sublimation material 80) disposed under the seed crystal and used for seed crystal growth are provided. A crucible to be accommodated (graphite crucible 10), a heating unit (heating unit 30) which is disposed around the side of the crucible and heats the crucible using an induction heating coil (induction heating coil 30a); A method for manufacturing a silicon carbide single crystal using a heat insulating member (heat insulating member 12) disposed between the crucible and the growth of the seed crystal accommodated in the crucible in a side view of the crucible. The gist is to include a step of reducing the thickness of the heat insulating member in the lateral direction.

  According to such a method for manufacturing a silicon carbide single crystal, in the vicinity of the silicon carbide single crystal on which the seed crystal has grown, the heat insulation effect by the heat insulating member is reduced. Therefore, the silicon carbide single crystal is affected by the heat radiation from the crucible. The temperature in the vicinity of the crystal decreases. That is, the silicon carbide single crystal manufacturing apparatus can cause a temperature difference between the vicinity of the silicon carbide single crystal and the vicinity of the sublimation raw material even when approaching the sublimation raw material as the seed crystal grows.

  Therefore, according to such a method for manufacturing a silicon carbide single crystal, it is possible to further suppress crystal defects such as a decrease in crystallinity of the silicon carbide single crystal and screw dislocations while continuously growing the seed crystal.

  A second feature of the present invention relates to the first feature of the present invention, wherein the heat insulating member includes a first heat insulating member (first heat insulating member 14) disposed on a side portion of the crucible and the first heat insulating member. And the second heat insulating member (second heat insulating member 16) disposed on the induction heating coil side, and in the step of reducing the thickness of the heat insulating member, the seed crystal accommodated in the crucible in a side view of the crucible The gist is to extract the first heat insulating member or the second heat insulating member up to a position corresponding to the silicon carbide single crystal on which the crystal has grown.

  The third feature of the present invention relates to the second feature of the present invention, and is summarized in that the second heat insulating member is extracted in the step of reducing the thickness of the heat insulating member.

  The fourth feature of the present invention relates to the second or third feature of the present invention, and is summarized in that the crucible and the first heat insulation member are moved upward from the induction heating coil in the step of reducing the thickness of the heat insulation member. .

  The fifth feature of the present invention is related to any one of the second to fourth features of the present invention, and the first heat insulating member covers the crucible.

  According to the features of the present invention, a method for producing a silicon carbide single crystal that can further suppress crystal defects such as a screw dislocation and a crystallinity degradation of a silicon carbide single crystal while continuously growing a seed crystal is provided. Can do.

  Next, first and second embodiments according to the present invention will be described with reference to the drawings. In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals. However, it should be noted that the drawings are schematic and ratios of dimensions are different from actual ones.

  Accordingly, specific dimensions and the like should be determined in consideration of the following description. Moreover, it is a matter of course that portions having different dimensional relationships and ratios are included between the drawings.

[First Embodiment]
In the present embodiment, (1) a schematic configuration of a silicon carbide single crystal manufacturing apparatus, (2) a silicon carbide single crystal manufacturing method, and (3) actions and effects will be described with reference to FIGS. 1 and 2.

  FIG. 1 is a configuration diagram illustrating an outline of a silicon carbide single crystal manufacturing apparatus 1 according to a first embodiment of the present invention. FIG. 2 is a configuration diagram illustrating an outline of the silicon carbide single crystal manufacturing apparatus 1 according to the first embodiment of the present invention.

(1) Schematic Configuration of Silicon Carbide Single Crystal Manufacturing Device As shown in FIG. 1, a silicon carbide single crystal manufacturing device 1 includes a graphite crucible 10, a quartz tube 20, a heating unit 30, and a second heat insulating member. 16.

  Each part which comprises the manufacturing apparatus 1 of a silicon carbide single crystal is demonstrated. Specifically, (1.1) graphite crucible 10, (1.2) quartz tube 20, (1.3) heating unit 30, and (1.4) silicon carbide single crystal 100 will be described.

(1.1) Graphite crucible 10
The graphite crucible 10 is disposed under the seed crystal 70 containing silicon carbide and the seed crystal 70, and accommodates a sublimation raw material 80 used for the growth of the seed crystal 70. The graphite crucible 10 is fixed inside the quartz tube 20 by a support rod 40. The graphite crucible 10 includes a reaction vessel main body 50 and a lid portion 60.

  The reaction vessel main body 50 is cylindrical at least inside. A seed crystal 70 and a sublimation raw material 80 are accommodated in the reaction vessel main body 50. A seed crystal 70 is disposed inside the reaction vessel main body 50. Specifically, the seed crystal 70 is bonded to the inner surface 61 of the lid 60.

  The sublimation raw material 80 is placed on the bottom 51 of the reaction vessel main body 50.

  The inside of the reaction vessel main body 50 is filled with an inert gas such as argon to form an inert atmosphere. The pressure and temperature inside the reaction vessel main body 50 can be changed.

  The lid 60 is detachably provided on the reaction vessel main body 50 by screwing.

(1.2) Quartz tube 20
In the present embodiment, the quartz tube 20 covers at least the side surface of the graphite crucible 10. The inside of the quartz tube 20 is filled with an inert gas such as argon to form an inert atmosphere.

(1.3) Heating unit 30
The heating unit 30 is disposed around the side of the graphite crucible 10 and heats the graphite crucible 10 using the induction heating coil 30a. The heating unit 30 is disposed on the outer periphery of the quartz tube 20.
(1.4) Silicon carbide single crystal 100
Sublimation raw material 80 is a silicon carbide raw material containing silicon carbide. When the inside of the graphite crucible 10 is heated by the heating unit 30 and becomes a predetermined temperature condition and pressure condition, the sublimation raw material 80 is sublimated.

  As shown in FIG. 2, the sublimation raw material 80 that has been sublimated is recrystallized on the seed crystal 70 when cooled to the crystallization temperature, and becomes a silicon carbide single crystal 100.

  Silicon carbide single crystal 100 is formed in a convex shape from seed crystal 70 toward sublimation raw material 80 as the growth proceeds. The lower end of silicon carbide single crystal 100 in the vertical direction of graphite crucible 10 is defined as single crystal end portion 100a.

(1.5) Thermal insulation member 12
The heat insulating member 12 is disposed between the induction heating coil 30 a and the graphite crucible 10. Specifically, the heat insulating member 12 includes a first heat insulating member 14 disposed on the side of the graphite crucible 10 and a second heat insulating member disposed closer to the induction heating coil 30a than the first heat insulating member 14. 16 and the like.

  In the present embodiment, the first heat insulating member 14 covers not only the side portion of the graphite crucible 10 but also the entire graphite crucible 10. Specifically, the first heat insulating member 14 is in close contact with the side portion, the bottom portion 51, and the lid portion 60 of the reaction vessel main body 50 constituting the graphite crucible 10.

  The second heat insulating member 16 is formed in a cylindrical shape. The second heat insulating member 16 is inserted between the graphite crucible 10 and the heating unit 30. Specifically, the second heat insulating member 16 is inserted between the reaction vessel main body 50 constituting the graphite crucible 10 and the quartz tube 20.

  As shown in FIG. 2, the 2nd heat insulation member 16 is extracted to the position corresponding to the silicon carbide single crystal 100 with which the seed crystal 70 grew.

  The first heat insulating member 14 and the second heat insulating member 16 have a lower thermal conductivity than the graphite crucible 10. Specifically, the thermal conductivity of the first heat insulating member 14 and the second heat insulating member 16 is preferably 0.06 W / m · k or less.

  The first heat insulating member 14 and the second heat insulating member 16 are formed of, for example, porous carbon or carbon felt in which a plurality of holes are formed. The thickness d14 of the first heat insulating member 14 and the thickness d16 of the second heat insulating member 16 are each 15 millimeters or more.

(2) Manufacturing method of silicon carbide single crystal Next, the manufacturing method of the silicon carbide single crystal which concerns on this embodiment is demonstrated using FIG.2 and FIG.3. FIG. 3 is a flowchart showing a method for manufacturing a silicon carbide single crystal according to the present embodiment.

  Specifically, the method for producing a silicon carbide single crystal includes (2.1) a raw material preparation step, (2.2) an arrangement step, (2.3) a crucible heating step, (2.4) a single crystal growth step, (2.5) Insulating member reduction step, (2.6) Peripheral grinding step, (2.7) Slicing step.

(2.1) Raw material preparation process In the raw material preparation process of step S1, the sublimation raw material 80 is prepared.

(2.2) Arrangement Step In the arrangement step of Step S2, the sublimation raw material 80, the seed crystal 70, etc. are arranged in the silicon carbide single crystal manufacturing apparatus 1.

  In the arrangement process of step S <b> 2, the second heat insulating member 16 is not inserted between the reaction vessel main body 50 and the quartz tube 20. Specifically, the second heat insulating member 16 is disposed closer to the support rod 40 than the bottom 51 of the reaction vessel main body 50.

(2.3) Crucible Heating Step In the crucible heating step of step S3, the graphite crucible 10 is heated using the heating unit 30. Specifically, the heating unit 30 energizes the induction heating coil 30a to heat the graphite crucible 10 with a substantially constant output. The heating unit 30 heats the graphite crucible 10 and sublimates the sublimation raw material 80.

(2.4) Single Crystal Growth Step In the single crystal growth step of step S4, silicon carbide single crystal 100 is grown on seed crystal 70.

  Specifically, in the single crystal growth step of step S4, the sublimated raw material 80 is recrystallized on the seed crystal 70 disposed on the inner surface 61 of the lid 60 when cooled to the crystallization temperature. To do.

  That is, the raw material gas sublimated from the sublimation raw material 80 grows the silicon carbide single crystal 100 on the seed crystal 70.

(2.5) Thermal insulation member reduction process In the thermal insulation member reduction process of step S5, the thickness of the thermal insulation member 12 in the lateral direction of the graphite crucible 10 is reduced as the seed crystal 70 grows in the single crystal growth process of step S4. . Specifically, in the side view of the graphite crucible 10, the thickness of the heat insulating member 12 between the heating unit 30 and the graphite crucible 10 is reduced as the seed crystal 70 accommodated in the graphite crucible 10 grows.

  In the heat insulating member reduction process of step S5, in the side view of the graphite crucible 10, the first heat insulating member 14 or the first heat insulating member 14 or the first heat insulating member 14 is moved to a position corresponding to the silicon carbide single crystal 100 on which the seed crystal 70 accommodated in the graphite crucible 10 has grown. 2 The thickness of the heat insulating member is reduced by extracting the heat insulating member 16.

  As shown in FIG. 2, in the heat insulating member reduction process of step S <b> 5 in the present embodiment, in the side view of the graphite crucible 10, the single crystal end line S corresponding to the single crystal end 100 a of the silicon carbide single crystal 100 is formed. The 2nd heat insulation member 16 is suitably extracted below the manufacturing apparatus 1 of a silicon carbide single crystal to the corresponding position.

  Thereby, a silicon carbide single crystal (hereinafter referred to as a single crystal ingot) grows in the vertical direction of the graphite crucible 10 with time.

  A single crystal ingot is obtained by performing steps S1 to S5 described above.

(2.6) Outer peripheral grinding step In the outer peripheral grinding step of step S6, outer peripheral grinding or the like is performed on the single crystal ingot grown to a desired size. For example, orientation flat forming processing may be performed in which an orientation flat (orientation flat) indicating a crystal orientation (Si plane, C plane, etc.) is formed on a single crystal ingot.

(2.7) Slicing Step In the slicing step of step S7, a semiconductor wafer is cut out from the single crystal ingot.

  In addition, a semiconductor wafer can be manufactured by performing the above-mentioned steps S1-S7.

  As described above, according to the manufacturing method shown in FIG. 3, the raw material gas is sublimated from the heating position of the heated sublimation raw material 80, recrystallized on seed crystal 70, and silicon carbide single crystal 100 is formed on seed crystal 70. grow up.

(3) Action / Effect As described above, according to the present embodiment, in the heat insulating member reduction process in step S5, the heat insulating member 12 between the heating unit 30 and the graphite crucible 10 is formed of the seed crystal 70. Reduced as it grows. For this reason, in the vicinity of the silicon carbide single crystal 100 on which the seed crystal 70 is grown, the heat retaining effect by the heat insulating member 12 is reduced. The temperature drops. In other words, the silicon carbide single crystal manufacturing apparatus 1 causes a temperature difference between the vicinity of the silicon carbide single crystal 100 and the vicinity of the sublimation raw material 80 even when the seed crystal 70 grows and approaches the sublimation raw material 80. Can be made.

  Therefore, according to such a method for manufacturing a silicon carbide single crystal, the silicon carbide single crystal manufacturing apparatus 1 continuously reduces the crystallinity of the silicon carbide single crystal 100 while the seed crystal 70 is continuously grown. Crystal defects such as dislocations can be further suppressed.

  According to the method for manufacturing a silicon carbide single crystal of the present embodiment, in the heat insulating member reducing step in step S5, the thickness of the heat insulating member 12 in the lateral direction of the graphite crucible 10 is reduced in the side view of the graphite crucible 10. Therefore, in the vicinity of the silicon carbide single crystal 100, the heat retention effect by the heat insulating member 12 is further reduced, so that it is more easily affected by heat radiation from the graphite crucible 10. Therefore, the temperature in the vicinity of silicon carbide single crystal 100 is more likely to decrease.

  According to the method for manufacturing a silicon carbide single crystal of the present embodiment, the heat insulating member 12 includes the first heat insulating member 14 and the second heat insulating member 16, and in the heat insulating member reducing step of Step S <b> 5, the side surface of the graphite crucible 10. In view, the second heat insulating member 16 is extracted below the silicon carbide single crystal manufacturing apparatus 1 to a position corresponding to the silicon carbide single crystal 100 on which the seed crystal 70 accommodated in the graphite crucible 10 has grown. Decrease the thickness of 12.

  For this reason, in the side view of the graphite crucible 10, the graphite crucible 10 from the sublimation raw material 80 to the silicon carbide single crystal 100 is covered with the heat insulating member 12, and is therefore kept at a high temperature. Further, in the graphite crucible 10 in the region where the second heat insulating member 16 is extracted, the heat retaining effect by the second heat insulating member 16 is reliably reduced. That is, according to such a method for manufacturing a silicon carbide single crystal, a temperature difference between the vicinity of silicon carbide single crystal 100 and the vicinity of sublimation raw material 80 can be reliably generated.

  Therefore, according to such a method for manufacturing a silicon carbide single crystal, while the seed crystal 70 is reliably and continuously grown, crystallinity deterioration of the silicon carbide single crystal 100 and crystal defects such as screw dislocations are further suppressed. it can.

[Second Embodiment]
In 1st Embodiment mentioned above, in the heat insulation member reduction process of step S5, in the silicon carbide single crystal manufacturing apparatus 1, the 2nd heat insulation member 16 between the graphite crucible 10 and the heating part 30 is silicon carbide single crystal. By extracting to a position corresponding to 100, the thickness of the heat insulating member 12 is reduced. On the other hand, in 2nd Embodiment, the manufacturing method in a heat insulation member reduction process differs from 1st Embodiment.

  In the second embodiment, a configuration for extracting the graphite crucible 10 and the first heat insulating member 14 will be described with reference to FIG.

  FIG. 4 is a configuration diagram for explaining the outline of the silicon carbide single crystal manufacturing apparatus 1 according to the second embodiment of the present invention.

  Note that, in the following second embodiment, differences from the first embodiment will be mainly described, and overlapping descriptions will be omitted.

  In the present embodiment, (1) a method for producing a silicon carbide single crystal, (2) actions and effects, and (3) a modification will be described.

(1) Manufacturing method of silicon carbide single crystal As shown in FIG. 4, the structure of the manufacturing apparatus 1 of a silicon carbide single crystal is the same as that of 1st Embodiment.

  In the heat insulating member reduction process of step S5A of the method for manufacturing a silicon carbide single crystal according to the second embodiment, the graphite crucible 10 and the first heat insulating member 14 are moved upward from the induction heating coil 30a in the first embodiment. Different from the method for producing a silicon carbide single crystal.

  Specifically, in the heat insulating member reduction step in step S5A, the graphite crucible 10 is made of graphite up to a position corresponding to the single crystal end line S corresponding to the single crystal end 100a of the silicon carbide single crystal 100 in a side view. The crucible 10 and the first heat insulating member 14 are appropriately extracted above the silicon carbide single crystal manufacturing apparatus 1.

(2) Action / Effect As described above, according to the method for manufacturing a silicon carbide single crystal of the second embodiment, the side surface of the graphite crucible 10 is the same as the method for manufacturing the silicon carbide single crystal of the first embodiment. In view, the graphite crucible 10 from the sublimation raw material 80 to the silicon carbide single crystal 100 is covered with the heat insulating member 12, and thus is kept at a high temperature.

  Further, the graphite crucible 10 extracted upward is reliably cooled because the heat insulation effect by the second heat insulating member 16 is reliably reduced and is moved away from the induction heating coil 30a.

  Therefore, according to such a method for manufacturing a silicon carbide single crystal, a temperature difference between the vicinity of the silicon carbide single crystal 100 and the vicinity of the sublimation raw material 80 can be reliably generated. The effect similar to that of the method for producing the single crystal is obtained, and the silicon carbide single crystal is rapidly formed at the single crystal end portion 100 a of the silicon carbide single crystal 100.

(3) Modification In the second embodiment, the graphite crucible 10 and the first heat insulating member 14 are extracted upward and away from the induction heating coil 30a. However, the present invention is not limited to this. For example, a graphite crucible 10, the first heat insulating member 14 and the induction heating coil 30a may be moved upward.

  According to this, as in the first embodiment, the second heat insulating member 16 is extracted to a position corresponding to the single crystal end line S corresponding to the single crystal end 100a of the silicon carbide single crystal 100. Similar effects can be obtained.

[Other Embodiments]
Although the contents of the present invention have been disclosed through the embodiments of the present invention as described above, it should not be understood that the descriptions and drawings constituting a part of this disclosure limit the present invention. From this disclosure, various alternative embodiments, examples and operational techniques will be apparent to those skilled in the art.

  For example, the embodiment of the present invention can be modified as follows. In the embodiment described above, the second heat insulating member 16 is extracted to a position corresponding to the silicon carbide single crystal 100. However, the extraction length of the second heat insulating member 16 may be adjusted according to the growth of the seed crystal 70.

  Specifically, when the temperature in the vicinity of the seed crystal 70 is likely to decrease according to the second heat insulating member 16, the length of the second heat insulating member 16 to be extracted is shortened, and the temperature in the vicinity of the seed crystal 70. Is brought to the crystallization temperature. On the other hand, when the temperature in the vicinity of the seed crystal 70 is unlikely to decrease according to the second heat insulating member 16, the length of the second heat insulating member 16 to be extracted is lengthened, and the temperature in the vicinity of the seed crystal 70 is crystallized. Can be temperature.

  The second heat insulating member 16 has been described as a porous carbon felt in which a plurality of holes are formed, but any material having a lower thermal conductivity than the graphite crucible 10 may be used. The thickness of the second heat insulating member 16 is at least 15 millimeters. However, when a heat insulating member different from carbon felt is used, the lower limit value is not necessarily 15 mm. The thickness can be appropriately changed according to the heat insulating effect of the material.

  As described above, the present invention naturally includes various embodiments that are not described herein. Therefore, the technical scope of the present invention is defined only by the invention specifying matters according to the scope of claims reasonable from the above description.

It is a lineblock diagram explaining the outline of silicon carbide single crystal manufacturing device 1 concerning a 1st embodiment of the present invention. It is a lineblock diagram explaining the outline of silicon carbide single crystal manufacturing device 1 concerning a 1st embodiment of the present invention. It is a flowchart which shows the manufacturing method of the silicon carbide single crystal which concerns on 1st Embodiment of this invention. It is a block diagram explaining the outline of the manufacturing apparatus 1 of the silicon carbide single crystal which concerns on 2nd Embodiment of this invention.

Explanation of symbols

S ... single crystal end wire, 1 ... manufacturing apparatus, 10 ... graphite crucible, 12 ... heat insulation member,
14 ... 1st heat insulation member, 16 ... 2nd heat insulation member, 20 ... Quartz tube, 30 ... Heating part,
30a ... induction heating coil, 40 ... support rod, 50 ... reaction vessel body, 51 ... bottom,
60 ... Lid, 61 ... Inner surface, 70 ... Seed crystal, 80 ... Raw material for sublimation,
100 ... Silicon carbide single crystal, 100a ... Single crystal edge

Claims (5)

A crucible containing a seed crystal containing silicon carbide, and a sublimation raw material disposed under the seed crystal and used for growing the seed crystal;
A heating unit disposed around a side portion of the crucible and heating the crucible using an induction heating coil; a heat insulating member disposed between the heating unit and the crucible;
A method for producing a silicon carbide single crystal using
A method for producing a silicon carbide single crystal, comprising a step of reducing the thickness of the heat insulating member in a lateral direction of the crucible as the seed crystal accommodated in the crucible grows in a side view of the crucible.
The heat insulating member is
A first heat insulating member disposed on a side of the crucible;
A second heat insulating member disposed closer to the induction heating coil than the first heat insulating member,
In the step of reducing the thickness of the heat insulating member, in the side view of the crucible, the first heat insulating member or the second heat insulating member reaches a position corresponding to the silicon carbide single crystal on which the seed crystal grown in the crucible is grown. The method for producing a silicon carbide single crystal according to claim 1, wherein the member is extracted.
The method for producing a silicon carbide single crystal according to claim 2, wherein in the step of reducing the thickness of the heat insulating member, the second heat insulating member is extracted.
The method for producing a silicon carbide single crystal according to claim 2 or 3, wherein, in the step of reducing the thickness of the heat insulating member, the crucible and the first heat insulating member are moved upward from the induction heating coil.
  The said 1st heat insulation member is a manufacturing method of the silicon carbide single crystal as described in any one of Claims 2 thru | or 4 which covers the said crucible.

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