JP2010129898A - Crystal oscillator - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a crystal oscillator with frequency stability, which prevents a crystal oscillator from degradation in crystal impedance and Q value. <P>SOLUTION: The crystal oscillator includes a crystal substrate 10 in which one principal surface is formed with a recess 11a and the other principal surface is formed with a protrusion 11b having a curved surface shape; a first electrode 12a formed on one principal surface of the crystal substrate 10; a second electrode 12b formed opposite to the first electrode 12a on the other principal surface of the crystal substrate 10; a first container 20a which blocks the recess 11a of the crystal substrate 10; a second container 30a which seals the second electrode 12b; and external connection terminals 21a provided at four corners of the principal surface of the first container 20a or the second container 30a. A predetermined one of the external connection terminals 21a is electrically connected to the first electrode 12a and the other predetermined one of the external connection terminals 21a is electrically connected to the second electrode 12b. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a crystal resonator used in an electronic device.

In recent years, with the miniaturization of electronic devices, there has been an increasing demand for miniaturization and thinning of crystal resonators widely used in electronic devices.
For example, Japanese Patent Application Laid-Open Publication No. 2003-259542 discloses that a crystal resonator can be manufactured in a wafer state because it has become difficult to process and handle the crystal resonator individually. A crystal resonator as shown is proposed.

First, an example of the structure of the crystal unit as described above will be described.
The quartz resonator is mainly composed of a quartz substrate having electrodes formed on both main surfaces, a first container body, and a second container body. The quartz substrate having electrodes formed on both main surfaces is a first substrate. The container body and the second container body are sandwiched and joined.

The quartz substrate is formed of a vibrating part and a frame part connected to the end of the vibrating part.
The first container body has a recess formed on one main surface.
The second container body has recesses formed on one main surface, and external connection terminals are formed on the other main surface, that is, the four corners of the surface facing the bottom surface of the recess of the second container body. .

In the crystal resonator, one main surface of the frame portion of the crystal substrate is joined to the first container body with the concave portion facing the vibration portion side, and the other main surface of the frame portion of the crystal substrate and the concave portion are The second container body facing the vibrating part side is in a joined state.
By joining in this way, the electrodes formed on both main surfaces of the quartz substrate are sealed with the first container body and the second container body.
In addition, the electrode formed on one main surface of the quartz substrate is in a state of being electrically connected to one predetermined external connection terminal, and the electrode formed on the other main surface of the quartz substrate is In this state, it is electrically connected to one other predetermined external connection terminal.

Next, a method for manufacturing the crystal resonator will be described.
As an example of a method for manufacturing a crystal resonator, there is a method of processing with a wafer in order to increase work efficiency.

  This method for manufacturing a crystal resonator includes, for example, a crystal wafer forming process, an electrode forming process, a first bonding process, a second bonding process, and an individualizing process.

  This crystal wafer forming step is a step of forming a plurality of vibrating portions on the crystal wafer using a photolithography technique and an etching technique.

  The electrode forming step is a step of forming an electrode on the quartz wafer by using a photolithography technique and an etching technique after forming a metal film on the entire surface of the quartz wafer on which a plurality of vibration portions are formed.

  The first bonding step is a step of bonding a crystal wafer on which a plurality of electrodes are formed and a first container body wafer having a plurality of recesses. In the first bonding step, since the concave portion of the first container body is bonded in a state facing the electrode side, the electrode formed on one main surface of the crystal wafer is the concave portion of the first container body. It will be in the sealed state.

  The second bonding step is a step of bonding a crystal wafer on which a plurality of electrodes are formed and a second container body wafer having a plurality of recesses. In the second bonding step, since the concave portion of the second container body is bonded in a state facing the electrode side, the electrode formed on the other main surface of the crystal wafer is the concave portion of the second container body. It will be in the sealed state.

The singulation step is a step of cutting the recesses between the first container body and the second container body joined to the quartz substrate into individual crystal resonators (see, for example, Patent Document 1). ).
JP 2006-148758 A

However, the structure of the conventional crystal unit has the following problems.
Here, a case of a crystal resonator using thickness shear vibration will be described.

  In the vibration part where the electrode is formed, the vibration energy of the thickness shear vibration which is the main vibration is not confined in the vibration part, and the vibration energy leaks to the frame part. As the size of the crystal unit is reduced, the size of the vibrating part is also reduced, so even if the leakage amount of vibration energy is the same as the conventional size, the crystal impedance and Q value of the crystal unit will deteriorate. There is a case.

  In the vibration part on which the electrode is formed, vibration loss of the thickness shear vibration that is the main vibration occurs due to the contour vibration that is the secondary vibration other than the thickness shear vibration that is the main vibration. As a result, the frequency stability of the crystal unit may deteriorate.

  Therefore, an object of the present invention is to solve the above-described problems, provide a crystal resonator having high frequency stability, preventing deterioration of crystal impedance and Q value of the crystal resonator.

  In order to solve the above problems, the present invention provides a quartz substrate in which a concave portion is formed on one main surface and a convex portion having a curved surface is formed on the other main surface, and the one main surface of the quartz substrate. A first electrode formed; a second electrode formed on the other main surface of the quartz substrate opposite to the first electrode; and a first container body that closes the recess of the quartz substrate. And a second container body that seals the second electrode, and a plurality of external connection terminals provided on the main surface of the first container body or the second container body, One of the external connection terminals is electrically connected to the first electrode, and the other predetermined one of the external connection terminals is electrically connected to the second electrode. Crystal resonator.

Here, in such a crystal resonator, a vibration portion is defined between the curved convex portion and the main surface in the concave portion facing the convex portion.
By using such a crystal resonator, it is possible to obtain a crystal resonator in which the vibration energy of the main vibration of the crystal resonator is confined in the vibrating portion where the electrode is formed, and deterioration of crystal impedance and Q value is prevented. it can. In addition, it is possible to obtain a crystal resonator with high frequency stability that is not affected by vibration loss due to secondary vibration.

  Next, the best mode for carrying out the present invention (hereinafter referred to as “embodiment”) will be described in detail with reference to the drawings as appropriate. In addition, each component is exaggerated for easy understanding of the state.

(First embodiment)
As shown in FIG. 1, a crystal resonator 101 according to the first embodiment of the present invention includes a crystal substrate 10, a first electrode 12a, a second electrode 12b, a first container body 20a, and a second container. The body 30a and the external connection terminal 21 are mainly configured. Further, in the crystal resonator 101 according to the first embodiment of the present invention, the crystal substrate 10 on which the first electrode 12a and the second electrode 12b are formed is used as the first container body 20 and the second container body. It is the structure of being sandwiched between 30 and joined.
FIG. 1 is an exploded perspective view showing an example of a crystal resonator according to the first embodiment of the present invention. FIG. 2 is a conceptual diagram showing a state in which the long side of the crystal resonator according to the first embodiment of the present invention is cut at the center.

First, the quartz substrate 10 will be described.
The quartz substrate 10 has a concave portion 11a formed on one main surface and a convex portion 11b having a curved surface formed on the other main surface. Here, the convex portion 11b having a curved shape is provided at a position facing the concave portion 11a. Further, the position where the maximum height of the convex portion 11b having the curved surface is provided so as to coincide with the center of the surface in the concave portion 11a.
Further, a substrate through hole BS is formed in the quartz substrate 10. The substrate through-hole BS penetrates from one main surface of the quartz substrate 10 to the other main surface, and is metal so that one main surface of the quartz substrate 10 and the other main surface are electrically connected. And a conductive material such as a conductive paste. The substrate through-hole BS is provided from one main surface where the concave portion 11a of the quartz substrate 10 is formed toward one main surface where the concave portion 31 of the second container body 30a described later is formed. It has been.
On one main surface of the quartz substrate 10 where the recess 11a is formed, a first bonding metal layer 40 for bonding to a first container body 20a described later is formed. However, the first bonding metal layer 40 is formed so as not to contact the substrate through-hole BS formed in the quartz substrate 10.

  A second bonding metal layer for bonding to the second container body 30 to be described later is located at the edge of the other main surface of the quartz substrate 10 and facing the first bonding metal layer 40. 41 is formed. However, the second bonding metal layer 41 is formed so as not to contact the substrate through hole BS formed in the quartz substrate 10.

The concave portion 11a and the curved convex portion 11b provided on the quartz substrate 10 are formed by combining a photolithography technique and an etching technique.
Here, the vibration portion is defined between the curved convex portion 11b and the main surface in the concave portion 11a facing the curved convex portion 11b. The thickness of the vibration part is a thickness matched to a predetermined frequency.

  The first electrode 12 a is formed on the surface in the recess 11 a provided on one main surface of the quartz substrate 10. The first electrode 12a is formed in the concave portion 11a of the quartz substrate 10, and is formed along the surface of the concave portion 11a of the quartz substrate 10 so as to be electrically connected to a predetermined wiring terminal 22a described later.

  The second electrode 12b is formed on the other main surface of the quartz substrate 10 so as to face the first electrode 12a. The second electrode 12b is electrically connected to another predetermined wiring terminal 22 to be described later via the substrate side through hole BS of the quartz substrate 10.

Next, the first container body 20a will be described.
The first container body 20a is used by being selected from any one of quartz, glass, silicon, and ceramic. The first container body 20a plays a role of closing the concave portion 11a formed on one main surface of the quartz substrate 10. When the first container body 20a closes the recess 11a of the quartz substrate 10, the first electrode 12a formed on the surface in the recess 11a of the quartz substrate 10 is sealed.

The first container body 20a is made of, for example, quartz and is formed in a flat plate shape.
The first container body 20a mainly includes a plurality of wiring terminals 22a and a recess sealing metal layer 42 on one main surface, and a plurality of external connection terminals 21a on the other main surface. The first container body 20a is provided with a plurality of first through holes BY1.

A plurality of wiring terminals 22 are provided on one main surface of the first container body 20a. For example, two wiring terminals 22 are provided side by side on one short side.
A plurality of external connection terminals 21a are formed on the other main surface of the first container body 20a. For example, four external connection terminals 21a are formed at the four corners of the other main surface of the first container body 20a.
A plurality of first through holes BY1 are provided in the first container body 20a. The first through hole BY1 penetrates from one main surface to the other main surface, and is electrically conductive such as metal or conductive paste so that one main surface and the other main surface are electrically connected. The material is filled.
For example, two first through holes BY1 are provided side by side on one short side. At this time, the predetermined one first through hole BY1 is provided from the predetermined one wiring terminal 22a toward the predetermined one external connection terminal 21a. The predetermined other first through hole BY1 is provided from the predetermined other wiring terminal 22a toward the predetermined other one external connection terminal 21a.
The concave sealing metal layer 42 is an edge of one main surface of the first container body 20a, and the concave sealing metal layer 42 is annular at a position facing the first bonding metal layer 40. Is formed. The recess sealing metal layer 42 is used for bonding to the first bonding metal layer 40 formed on the quartz substrate 10. However, the recess sealing metal layer 42 is formed so as not to contact a wiring terminal 22a described later.

  The recess sealing metal layer 42 formed on one main surface of the first container body 20a is a first bonding metal layer 40 formed on one main surface of the quartz substrate 10 where the recess 11a is formed. And anodic bonding. The recess sealing metal layer 42 and the first bonding metal layer 40 are bonded so as not to contact the substrate through hole BS and the first through hole BY1 of the first container body 20a.

When the first bonding metal layer 40 and the recess sealing metal layer 42 are bonded, the predetermined one wiring terminal 22 a is pulled by the first electrode 12 a along the surface of the recess 11 a of the crystal substrate 10. Since it is turned, it is electrically connected to the first electrode 12a. Therefore, when the first bonding metal layer 40 and the recess sealing 42 metal layer are bonded, the predetermined one external connection terminal 21a is connected to the predetermined one through the first first through hole BY1. It is electrically connected to one wiring terminal 22a. That is, one predetermined external connection terminal 21a is electrically connected to the first electrode 12a.
Also, one other predetermined external connection terminal 21a is electrically connected to another predetermined wiring terminal 22a through another predetermined first through hole BY1. Since the predetermined other wiring terminal 22a is electrically connected to the second electrode 12b through the substrate through hole BS, the predetermined other one external connection terminal 21a is electrically connected to the second electrode 12b. Connected.

The second container body 30a will be described.
The second container body 30a is selected from one of quartz, glass, silicon, and ceramic. The second container body 30a has a recess 33 formed on one main surface. The recess 33 of the second container body 30a seals the second electrode 12b formed on the quartz substrate 10.
A second electrode sealing metal layer 43 is formed on one main surface of the second container body 30a where the recess 33 is formed. The second electrode sealing metal layer 43 is used for bonding to the second bonding metal layer 41 formed at the edge of the other main surface of the quartz substrate 10. However, the second electrode sealing metal layer 43 is formed so as not to contact the substrate through-hole BS when bonded to the second bonding metal layer 41.

  The second bonding metal layer 41 formed at the edge of the other main surface of the quartz substrate 10 is bonded to the second electrode sealing metal layer 43 of the second container body 30 by anodic bonding. The second bonding metal layer 41 and the second electrode sealing metal layer 43 are bonded so as not to come into contact with the substrate through-hole BS provided in the crystal substrate 10.

  In the quartz crystal resonator 101 according to the first embodiment configured as described above, since the vibration part has a curved convex shape, vibration energy is confined in the vibration part on which the electrode is formed. As a result, it is possible to prevent the crystal impedance and Q value of the crystal resonator from deteriorating due to vibration energy leakage. Moreover, since the influence on the frequency stability of the crystal unit 101 due to the secondary vibration can be suppressed, the crystal unit 101 shown in the first embodiment can obtain high frequency stability.

In addition, when the frequency of the crystal resonator is high, the vibration portion becomes extremely thin and the vibration portion is easily damaged in the conventional crystal resonator, but the crystal resonator 101 according to the first embodiment is a crystal substrate. 10 is in a state in which the concave portion 11a is formed, so that the vibration portion is reinforced. For this reason, even if it is a crystal vibrator with a high frequency, a vibration part becomes difficult to occur.
Further, the crystal resonator 101 according to the first embodiment can prevent the crystal impedance and the Q value of the crystal resonator from deteriorating regardless of the frequency of the crystal resonator.

Next, a method for manufacturing the crystal unit 101 according to the first embodiment of the present invention will be described.
The manufacturing method of the crystal unit 101 according to the first embodiment of the present invention mainly includes a crystal substrate forming process, an electrode forming process, a first bonding process, a second bonding process, and an individualizing process. Is done.

  In the quartz substrate forming step, a plurality of recesses 11a are formed on one main surface of a flat plate crystal wafer (not shown), and a curved surface is formed at a position facing the recess 11a on the other main surface of the flat plate crystal wafer. It is the process of forming the convex part 11b.

In the quartz substrate forming step, the step of forming the plurality of concave portions 11a and the step of forming the convex portion 11b having a curved shape may be performed separately. Here, the case where it carries out separately is demonstrated. In this quartz substrate forming step, a substrate through hole BS is formed between the recess 11a and the recess 11a.
The concave portion 11a of the crystal wafer is formed by using a photolithography technique and an etching technique.

The curved convex portion 11b formed on the other main surface of the quartz wafer is formed using a photolithography technique and an etching technique.
For example, a cover forming step of forming a cover (not shown) having the same etching rate as that of quartz so as to have the same shape as the curved convex portion 11b on the other main surface of the quartz wafer, and simultaneously removing the cover Through the transfer process of transferring the same shape as the cover to the other main surface of the crystal wafer by etching, the curved convex portion 11b is formed.

  The substrate through-hole BS is formed at the same time in any one of the step of forming the concave portion 11a and the step of forming the curved convex portion 11b. For the formation of the substrate through hole BS, for example, a method such as sandblasting is used.

The electrode forming step is a step of forming the first electrode 12a and the second electrode 12b on the quartz wafer.
The 1st electrode 12a is formed in the surface in the recessed part 11a formed in one main surface of a crystal wafer. The first electrode 12a is routed along the concave surface of the crystal wafer so as to be electrically connected to a predetermined wiring terminal 22 described later after a first bonding step described later.
The second electrode 12b is formed on the other main surface of the quartz wafer so as to face the first electrode 12a.
The electrode forming step includes a step of forming a metal film on both main surfaces of the crystal wafer, a step of applying a resist to the crystal wafer on which the metal film is formed, and a step of removing the resist so as to have a predetermined electrode shape. The method mainly includes a step of removing the metal film so as to obtain a predetermined electrode shape and a step of removing the resist of the crystal wafer.

  The first bonding step is a step of bonding the concave portion 11a formed in the quartz wafer toward the first container body wafer (not shown).

First, the first container wafer will be described.
On one main surface of the first container wafer, a pair of wiring terminals 22a and a concave sealing metal layer 42 for anodic bonding are formed. On the other main surface of the first container body wafer, a plurality of four external connection terminals 21a are formed. A plurality of first through holes BY1 are formed in the first container body wafer.
The first through hole BY is formed by filling with a conductive material after penetrating from one main surface to the other main surface of the first container wafer by a method such as sandblasting. In addition, although the construction methods, such as sandblasting, were demonstrated, you may penetrate by a photolithographic technique and an etching technique.
The recess sealing metal layer 42 is formed by using a photolithography technique and an etching technique after forming a metal film on one main surface of the first container body wafer.
A plurality of wiring terminals 22a are formed in pairs on the one main surface of the first container wafer inside the concave sealing metal layer. For example, a method such as sputtering or vapor deposition is used as a method of forming the wiring terminal 22a. The thickness of the wiring terminal 22a is the combined thickness of the concave sealing metal layer 42 and the first bonding metal layer 40.
The external connection terminal 21a is formed by, for example, a photolithography technique and an etching technique after forming a metal film on the other main surface of the first container body wafer. The external connection terminal 21a may be formed by sputtering or vapor deposition.
In this way, the first container body wafer is manufactured.

  Next, a first bonding metal layer 40 is formed on one main surface where the concave portion 11a of the quartz wafer is formed. The first bonding metal layer 40 is formed by a photolithography technique and an etching technique after a metal layer is formed on one main surface of the quartz wafer.

The concave sealing metal layer 42 formed on the other main surface of the first container body wafer, and the first bonding metal layer 40 formed on one main surface of the quartz wafer where the concave portion is formed, Bonded by anodic bonding.
At this time, the concave portion 11a of the crystal wafer is sealed by the first container body wafer.
Further, by this bonding, the first electrode 12a formed on the quartz wafer is electrically connected to a predetermined one wiring terminal 22a formed on the first container body wafer. The predetermined one wiring terminal 22a is electrically connected to the predetermined one external connection terminal 21a through the first through hole BY1. That is, the first electrode 12a is electrically connected to one predetermined external connection terminal 21a. Similarly, the second electrode 12b is electrically connected to another predetermined wiring terminal 22a formed on the first container body wafer via the substrate through hole BS of the crystal wafer. The predetermined other wiring terminal 22a is electrically connected to a predetermined other one of the external connection terminals 21a via a predetermined other first through hole BY1. That is, the second electrode 12b is electrically connected to another predetermined external connection terminal 21a.

The second bonding step is a step of bonding the concave portion 11a of the second container body wafer toward the crystal wafer side.
First, the second container wafer will be described. A plurality of concave portions 11a are formed on one main surface of the second container body wafer. Further, a second electrode sealing metal layer 43 is formed on one main surface forming the recess 11a of the second container body wafer.

  Next, the second bonding metal layer 41 is formed so as to surround the curved convex portion 11b formed on the other main surface of the quartz wafer. The second bonding metal layer 41 is formed by a photolithography technique and an etching technique after forming a metal layer on the other main surface of the quartz wafer. The second bonding metal layer 41 formed on the other main surface of the crystal wafer is formed at the same time as the first bonding metal layer 40 formed on the one main surface where the recess 11a of the crystal wafer is formed. May be.

  The second electrode sealing metal layer 43 formed on one main surface of the second container body wafer where the recess 31 is formed, and the second bonding metal formed on the other main surface of the crystal wafer The layer 41 is bonded by anodic bonding. At this time, the second electrode 12b formed on the other main surface of the quartz wafer is in a state of being sealed by the recess 33 on the one main surface of the second container body wafer.

The singulation process is a process in which the concave portions of the first container wafer and the second container wafer bonded to the crystal wafer are cut and separated into crystal units. In the singulation process, dicing, laser, or the like is used.
By performing such a process, the crystal resonator according to the embodiment of the present invention can be manufactured.

(Second embodiment)
FIG. 3A is a conceptual diagram showing a state where the crystal resonator according to the second embodiment of the present invention is cut at the center of the long side. FIG. 3B is a perspective view of the first container body of the crystal resonator according to the second embodiment of the present invention.
As shown in FIG. 3, the crystal unit 102 according to the second embodiment of the present invention is different from the first embodiment in that the first container body 20b has a recess.

As shown in FIG. 3 (b), the first container body 20b has a concave sealing metal layer 42, a concave portion 23 and a plurality of wiring terminals 22a formed on one main surface, and an external surface on the other main surface. A connection terminal 21a is formed. The first container body 20b is provided with a plurality of first through holes BY1.
A plurality of external connection terminals 21a are formed on the other main surface of the first container body 20b. For example, four pieces are formed at the four corners of the other main surface of the first container body 20b.
Moreover, the recessed part 23 formed in one main surface of the 1st container body 20b is the inner side of the metal layer for recessed parts sealing mentioned later, and the center side of the 1st container body 20b rather than the wiring terminal 22. FIG. Is provided.
A plurality of first through holes BY1 are provided in the first container body 20b. For example, two first through holes BY1 are provided on one short side. The first through hole BY1 penetrates from one main surface of the quartz substrate 10 to the other main surface, and is filled with a conductive material such as a metal or a conductive paste. Thereby, the predetermined one wiring terminal 22a is electrically connected to the predetermined one external connection terminal 21a through the predetermined one first through hole BY. Similarly, a predetermined other wiring terminal 22a is electrically connected to a predetermined other one external connection terminal 21a via a predetermined other first through hole BY1.
The recess sealing metal layer 42 is formed so as not to contact the first through hole BY1. The recess sealing metal layer 42 is bonded to the first bonding metal layer 40 formed on one main surface of the quartz substrate 10 where the recess 11a is formed by anodic bonding.

The first container body 20b has a recess 11a formed on one main surface of the quartz substrate 10 by bonding the recess sealing metal layer 42 and the first bonding metal layer 40 together. Play the role of blocking. When the first container body 20b closes the concave portion 11a of the quartz substrate 10, the first electrode 12a formed on the surface in the concave portion 11a of the quartz substrate 10 is sealed.
That is, the crystal resonator 102 according to the second embodiment can seal the first electrode 12a similarly to the first embodiment even if the structure of the first container body 20b is different.
Therefore, even if it comprises 2nd embodiment in this way, there exists an effect similar to 1st embodiment.

(Third embodiment)
FIG. 4A is a conceptual diagram showing a state where the crystal resonator according to the third embodiment of the present invention is cut at the center of the long side. FIG. 4B is a perspective view of the second container body of the crystal resonator according to the third embodiment of the present invention.
As shown in FIG. 4, the crystal resonator 103 according to the third embodiment of the present invention is different from the first embodiment in that the external connection terminal 31 is formed on the second container body 30b. .

As shown in FIG. 4B, a recess 33, a second electrode sealing metal layer 43, and a plurality of wiring terminals 22b are formed on one main surface of the second container body 30b. A plurality of external connection terminals 21b are formed on the other main surface of the other main surface of the second container body 30b. The second container body 30b is provided with a plurality of second through holes BY2.
For example, four external connection terminals 21b are formed at four corners of the other main surface of the second container body 30b.
For example, two wiring terminals 22b are provided side by side on one short side.
The second through-hole BY2 penetrates from one main surface of the second container body 30b to the other main surface, and is filled with a conductive material such as metal or conductive paste. For example, two second through holes BY2 are provided on one short side in a line. The second through hole BY2 is provided from the wiring terminal 22b formed on one main surface toward the external connection terminal 21b. Thereby, the predetermined one wiring terminal 22b is electrically connected to the predetermined one external connection terminal 21b through the predetermined one second through hole BY2. Similarly, the predetermined other wiring terminal 22b is electrically connected to the predetermined other external connection terminal 21b via the predetermined other second through hole BY2.
The second electrode sealing metal layer 43 is formed on one main surface of the second container body 30b where the recess 33 is formed, and is formed so as not to contact the second through hole BY2. . The second electrode sealing metal layer 43 is bonded to the second bonding metal layer 41 formed on the other main surface of the quartz substrate by anodic bonding.
The concave portion 33 formed on one main surface of the second container body 30b is inside the second electrode sealing metal layer 43 and closer to the center of the second container body 30b than the wiring terminal 22b. Provided.

When the first bonding metal layer 40 and the concave sealing metal layer 42 are bonded, the wiring terminal 21 formed on one main surface of the first container body has the first electrode 12a It is in an electrically connected state.
By joining the second electrode sealing metal layer 42 and the second bonding metal layer 41, one predetermined wiring terminal 22b formed on one main surface of the second container body 30b is The first electrode 12 a formed on one main surface of the quartz substrate 10 is electrically connected via the wiring terminal 21 a of the first container body 20 c and the substrate through hole BS of the quartz substrate 10. The predetermined one wiring terminal 22b is electrically connected to the predetermined one external connection terminal 21b through the second through hole BY2. Accordingly, one predetermined external connection terminal 21b is electrically connected to the first electrode 12a. Similarly, one other predetermined external connection terminal 21b is electrically connected to the second electrode 12b.

In other words, even in the crystal resonator in which the external connection terminal 21b is formed in the second container body 30b, a predetermined external connection is provided in the same manner as the crystal resonator 101 according to the first embodiment. The terminal 21b and the first electrode 12a formed on one main surface of the quartz substrate 10 can be electrically connected. Similarly, a predetermined other external connection terminal 21b and the second electrode 12b formed on the other main surface of the quartz substrate 10 can be electrically connected.
Therefore, even when the third embodiment is configured as described above, the same effects as those of the first embodiment can be obtained.

(Fourth embodiment)
Fig.5 (a) is a conceptual diagram of the state which cut | disconnected the long side in the center of the crystal resonator which concerns on 4th embodiment of this invention. FIG. 5B is a perspective view of the first container body of the crystal resonator according to the fourth embodiment of the present invention.
As shown in FIG. 5, the crystal resonator 104 according to the fourth embodiment of the present invention is different from the third embodiment in that the first container body 20 d has a recess 23.

As shown in FIG. 5B, the first container body 20d has a recess 23, a recess sealing metal layer 42, and a wiring terminal 22b formed on one main surface.
The recess sealing metal layer 42 is formed so as not to contact the substrate through-hole BS provided in the quartz substrate 10. The recess sealing metal layer 42 is bonded to the first bonding metal layer 40 formed on one main surface of the quartz substrate 10 where the recess 11a is formed by anodic bonding.
The wiring terminal 22b is electrically connected to the first electrode 12a formed on one main surface of the quartz substrate 10 when the recess sealing metal layer 42 and the first bonding metal layer 40 are bonded. Formed as follows. Moreover, the wiring terminal 21 is formed inside the concave sealing metal layer 42.
The recess 23 formed on one main surface of the first container body 20d is provided on the inner side of the recess sealing metal layer 42 and closer to the center of the first container body 20d than the wiring terminal 22b. Yes.

The first container body 20d has a recess 11a formed on one main surface of the quartz substrate 10 by bonding the recess sealing metal layer 42 and the first bonding metal layer 40 together. Play the role of blocking. The first container body 20d closes the concave portion 11a of the quartz substrate 10, whereby the first electrode 12a formed on the surface in the concave portion 11a of the quartz substrate 10 is sealed.
That is, the crystal resonator according to the fourth embodiment can seal the first electrode 12a similarly to the third embodiment even if the structure of the first container body 20d is different.

  Therefore, even when the fourth embodiment is configured as described above, the same effects as those of the third embodiment can be obtained.

  In the embodiment of the present invention, the method for forming the substrate through hole BS of the quartz wafer has been described as a method using sand blasting. However, for example, a method combining a photolithography technique and an etching technique may be used.

  In the embodiment of the present invention, the case where the number of the external connection terminals 21 is four has been described. However, the present invention is not limited to the embodiment of the present invention. For example, the number of external connection terminals 21 may be two.

  In addition, as a method for forming the first electrode 12a and the second electrode 12b, the metal film is formed and then formed by the photolithography technique and the etching technique. Also good.

  The method for forming the first bonding metal layer 40 has been described as a method in which a metal film is formed and then formed by a photolithography technique and an etching technique. However, for example, a sputtering method or a vapor deposition method may be used.

  The method for forming the second bonding metal layer 41 has been described as the method for forming the metal film by the photolithography technique and the etching technique, but, for example, a sputtering method or a vapor deposition method may be used.

  The method for forming the recess sealing metal layer 42 has been described as a method of forming a metal film by a photolithography technique and an etching technique. However, for example, a sputtering method or a vapor deposition method may be used.

  The method for forming the second electrode sealing metal layer 43 has been described as the method for forming the metal film by the photolithography technique and the etching technique. However, for example, a sputtering method or a vapor deposition method may be used.

  A first bonding metal layer 40 formed on one main surface of the quartz substrate 10 where the concave portion is formed, and a concave sealing metal layer 42 formed on one main surface of the first container body 20; As the bonding method, anodic bonding has been described. However, for example, direct bonding or bonding by an adhesive may be used.

  Furthermore, as a method of joining the second bonding metal layer 41 formed on the other main surface of the quartz substrate 10 and the second electrode sealing metal layer 43 formed on the second container body 30. Although the anodic bonding has been described, for example, bonding with an adhesive or the like may be used.

1 is an exploded perspective view showing an example of a crystal resonator according to a first embodiment of the present invention. It is a conceptual diagram of the state cut | disconnected in the center of the long side of the crystal oscillator which concerns on 1st embodiment of this invention. (A) It is a conceptual diagram of the state cut | disconnected in the center of the long side of the crystal oscillator which concerns on 2nd embodiment of this invention. (B) It is a perspective view of the 1st container body of the crystal oscillator based on 2nd embodiment of this invention. (A) It is a conceptual diagram of the state cut | disconnected in the center of the long side of the crystal oscillator which concerns on 3rd embodiment of this invention. (B) It is a perspective view of the 2nd container body of the crystal oscillator based on 3rd embodiment of this invention. (A) It is a conceptual diagram of the state cut | disconnected in the center of the long side of the crystal resonator which concerns on 4th embodiment of this invention. (B) It is a perspective view of the 1st container body of the crystal oscillator based on 4th embodiment of this invention.

Explanation of symbols

101, 102, 103, 104 Crystal resonator 10 Crystal substrate 11a Concave portion 11b formed on one main surface of the crystal substrate Curved convex portion 12a formed on the other main surface of the crystal substrate First electrode 12b First Second electrode BS Substrate through-hole 40 First bonding metal layer 41 Second bonding metal layer 20a, 20b, 20c, 20d First container body 23 formed on the other main surface of the first container body Recesses 22a, 22b Wiring terminals 21a, 21b External connection terminals 42 Recess sealing metal layer BY1 First through holes 30a, 30b Second container body 33 Recesses formed on one main surface of the second container body BY2 Second through-hole 43 Second electrode sealing metal layer

Claims (1)

A quartz substrate in which a concave portion is formed on one main surface and a convex portion having a curved surface is formed on the other main surface;
A first electrode formed on the one main surface of the quartz substrate;
A second electrode formed on the other main surface of the quartz substrate so as to face the first electrode;
A first container body for closing the concave portion of the quartz substrate;
A second container for sealing the second electrode;
A plurality of external connection terminals provided on the main surface of the first container body or the second container body;
With
A predetermined one of the external connection terminals is electrically connected to the first electrode;
A predetermined other one of the external connection terminals is electrically connected to the second electrode;
A crystal resonator characterized by that.

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