JP2010129670A - Power semiconductor module - Google Patents

Power semiconductor module Download PDF

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Publication number
JP2010129670A
JP2010129670A JP2008301064A JP2008301064A JP2010129670A JP 2010129670 A JP2010129670 A JP 2010129670A JP 2008301064 A JP2008301064 A JP 2008301064A JP 2008301064 A JP2008301064 A JP 2008301064A JP 2010129670 A JP2010129670 A JP 2010129670A
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power semiconductor
external terminal
semiconductor module
wiring pattern
terminal communication
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JP5101467B2 (en
Inventor
Yoshiko Taikai
美子 大開
Seiji Oka
誠次 岡
Takeshi Oi
健史 大井
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a power semiconductor module which has an external terminal securely connected to a terminal provided to each circuit, can have the external terminal easily detached from each terminal, and has superior repairability and reliability. <P>SOLUTION: The power semiconductor module includes a circuit board, a power semiconductor power element bonded to a device mounting portion of a wiring pattern of the circuit board, a cylindrical external terminal communication portion bonded to the wiring pattern, a circuit forming means for connecting a part requiring an electric connection, and a transfer mold resin for sealing them. The cylindrical external terminal communication portion is a metal cylinder in a shape of a truncated cone, and is smaller in diameter on a side exposed from the transfer mold resin than on a side bonded to the wiring pattern. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、生産性に優れたトランスファーモールドによる樹脂封止型の電力用半導体モジュールに関し、特に、小型で大電流化を実現するとともに、信頼性に優れたトランスファーモールドによる樹脂封止型の電力用半導体モジュールに関する。   The present invention relates to a resin-encapsulated power semiconductor module by transfer mold with excellent productivity, and in particular, for a resin-encapsulated power by transfer mold having a small size and high current, and having high reliability. The present invention relates to a semiconductor module.

小型であり、動作に伴う発熱を外部に効率良く逃がすことができるとともに、大電流化を可能にする、トランスファーモールドで樹脂封止した電力用半導体モジュールとして、金属の放熱ベースに接合された回路パターンに、ＩＧＢＴ等の電力用半導体素子を搭載するとともに、外部接続用の主端子と制御端子とを回路パターンの面に対して略垂直に接合して設けたものがある。   A circuit pattern bonded to a metal heat dissipation base as a power semiconductor module that is resin-sealed by transfer molding, enabling it to efficiently release heat generated during operation to the outside and increase the current. In addition, there is one in which a power semiconductor element such as an IGBT is mounted and a main terminal for external connection and a control terminal are joined substantially perpendicularly to the surface of the circuit pattern.

この電力用半導体モジュールの主回路に接続されている主端子には、銅のブロック、ねじ穴が付いた円筒、ナットを樹脂モールドしたものが用いられており、銅のブロックの主端子は外部配線とはんだで接合され、ねじ穴が付いた円筒およびナットを樹脂モールドした主端子は外部配線と、ボルトで接続されている。また、この電力用半導体モジュールの制御回路に接続する制御端子には、メスコネクタが用いられ、外部配線とは、外部配線である制御基板に設けられたピンタイプの端子で接続されている（例えば、特許文献１参照）。   The main terminal connected to the main circuit of this power semiconductor module is a copper block, a cylinder with a screw hole, and a resin-molded nut. The main terminal of the copper block is external wiring. The main terminals, which are joined by soldering and cylinders with screw holes and resin-molded nuts, are connected to external wiring by bolts. Further, a female connector is used as a control terminal connected to the control circuit of the power semiconductor module, and the external wiring is connected to a pin type terminal provided on the control board which is the external wiring (for example, , See Patent Document 1).

特開２００７−１８４３１５号公報（第７頁〜第９頁、第２図、第６図）JP 2007-184315 A (pages 7 to 9, FIGS. 2 and 6)

特許文献１に記載のトランスファーモールド樹脂で封止した電力用半導体モジュールは、主端子に大電流を流す外部配線が、ねじ止めやはんだ付けで固定されるため、外部配線からの取り外しが容易でなく、不具合があった場合の補修性に問題があった。
また、特許文献１には、ねじ止めやはんだ付けでない端子構造として、ピンが挿入されるコネクターが制御端子として記載されている。しかし、ピンの外部端子が挿入されるコネクター構造の端子は、通常使用では問題ないが、不要な外力が加わった場合に、外部端子が抜ける場合があるとの問題があった。 In the power semiconductor module sealed with transfer mold resin described in Patent Document 1, the external wiring that passes a large current to the main terminal is fixed by screwing or soldering, so it is not easy to remove from the external wiring. There was a problem in repairability when there was a defect.
Patent Document 1 describes a connector into which a pin is inserted as a control terminal as a terminal structure that is not screwed or soldered. However, the connector structure terminal into which the external terminal of the pin is inserted has no problem in normal use, but there is a problem that the external terminal may come off when an unnecessary external force is applied.

本発明は、上述のような課題を解決するためになされたもので、その目的は、トランスファーモールド樹脂により封止された電力用半導体モジュールであって、電力用半導体モジュールの各回路に設けられた端子と外部端子との接続が確実であるとともに、各端子から外部端子を容易に取り外すことができ、信頼性と補修性とに優れた電力用半導体モジュールを提供することである。   The present invention has been made to solve the above-described problems, and an object of the present invention is a power semiconductor module sealed with a transfer mold resin, and provided in each circuit of the power semiconductor module. An object of the present invention is to provide a power semiconductor module in which the connection between a terminal and an external terminal is reliable, the external terminal can be easily detached from each terminal, and the reliability and repairability are excellent.

本発明に係わる電力用半導体モジュールは、金属放熱体とこの金属放熱体の一方の面に接合した高熱伝導絶縁層とこの高熱伝導絶縁層における金属放熱体と接合した面と対向する面に設けられた配線パターンとからなる回路基板と、配線パターンの素子搭載部に接合された電力用半導体素子と、配線パターンに対して略垂直に接合された筒状外部端子連通部と、電力用半導体素子間、配線パターン間、電力用半導体素子と配線パターンとの間の各間を電気的に接続する回路形成手段と、少なくとも、配線パターンと電力用半導体素子と筒状外部端子連通部と回路形成手段とを封止したトランスファーモールド樹脂とを備えた電力用半導体モジュールであって、筒状外部端子連通部が金属筒で形成された円錐台形筒状外部端子連通部であり、円錐台形筒状外部端子連通部のトランスファーモールド樹脂から露出した側の径が配線パターンに接合した側の径より小さいものである。   The power semiconductor module according to the present invention is provided on a metal heat radiator, a high heat conductive insulating layer bonded to one surface of the metal heat sink, and a surface facing the surface bonded to the metal heat radiator in the high heat conductive insulating layer. A circuit board comprising a wiring pattern, a power semiconductor element joined to the element mounting portion of the wiring pattern, a cylindrical external terminal communication part joined substantially perpendicular to the wiring pattern, and the power semiconductor element Circuit forming means for electrically connecting between the wiring patterns and between the power semiconductor element and the wiring pattern; and at least the wiring pattern, the power semiconductor element, the cylindrical external terminal communication portion, and the circuit forming means; A transfer semiconductor resin and a power semiconductor module, wherein the cylindrical external terminal communication portion is a circular truncated conical external terminal communication portion formed of a metal cylinder, Those diameter is exposed from the trapezoidal tubular external terminal communication unit transfer molded resin side is smaller than the diameter of the side joined to the wiring pattern.

本発明に係わる電力用半導体モジュールは、筒状外部端子連通部が金属筒で形成された円錐台形筒状外部端子連通部であり、円錐台形筒状外部端子連通部のトランスファーモールド樹脂から露出した側の径が配線パターンに接合した側の径より小さいものであるので、円錐台形筒状外部端子連通部から外部端子を取り外すことが容易であり、補修性に優れているとともに、異常な力が加わらない限り、外部端子がはずれることがなく、接続の信頼性が高いものである。   The power semiconductor module according to the present invention is a frustoconical cylindrical external terminal communication portion in which the cylindrical external terminal communication portion is formed of a metal cylinder, and the side exposed from the transfer mold resin of the frustoconical cylindrical external terminal communication portion. Since the diameter of the wire is smaller than the diameter on the side joined to the wiring pattern, it is easy to remove the external terminal from the frustoconical cylindrical external terminal communication part, and it has excellent repairability and an abnormal force is applied. Unless this is the case, the external terminals are not disconnected, and the connection reliability is high.

実施の形態１．
図１は、本発明の実施の形態１に係る電力用半導体モジュールの断面模式図である。
図１に示すように、本実施の形態の電力用半導体モジュール１００は、電力用半導体モジュール１００の熱を放熱する金属放熱体である金属板１の一方の面に、高熱伝導絶縁層である樹脂絶縁層２が設けられている。この樹脂絶縁層２における金属板１に接合された面と対向する面には、金属箔の配線パターン３が設けられている。
すなわち、金属板１と樹脂絶縁層２と配線パターン３とで、回路基板である金属回路基板８を構成している。 Embodiment 1 FIG.
FIG. 1 is a schematic cross-sectional view of a power semiconductor module according to Embodiment 1 of the present invention.
As shown in FIG. 1, the power semiconductor module 100 of the present embodiment includes a resin that is a high thermal conductive insulating layer on one surface of a metal plate 1 that is a metal radiator that dissipates heat from the power semiconductor module 100. An insulating layer 2 is provided. A metal foil wiring pattern 3 is provided on the surface of the resin insulating layer 2 facing the surface bonded to the metal plate 1.
That is, the metal plate 1, the resin insulating layer 2, and the wiring pattern 3 constitute a metal circuit board 8 that is a circuit board.

また、配線パターン３上には、電力用半導体モジュール１００の端子となる円錐台形筒状外部端子連通部６が、はんだ４で接合されている。特に、円錐台形筒状外部端子連通部６は配線パターン３に対し、その中心軸が略垂直になるように設けられている。
また、配線パターン３と配線パターン３との間、電力用半導体素子５と電力用半導体素子５との間、および、配線パターン３と電力用半導体素子５との間は、これらを電気的に接続する回路形成手段であるワイヤーボンド９で接続されている。
そして、金属回路基板８の配線パターン形成面部および周囲側面部と、電力用半導体素子５と、ワイヤーボンド９と、円錐台形筒状外部端子連通部６の外側面は、トランスファーモールド樹脂７で封止されている。しかし、金属板１の樹脂絶縁層２が設けられた面と対向する面はトランスファーモールド樹脂７で封止されておらず、円錐台形筒状外部端子連通部６の孔部にはトランスファーモールド樹脂７は充填されていない。 On the wiring pattern 3, a frustoconical cylindrical external terminal communication portion 6 that is a terminal of the power semiconductor module 100 is joined by solder 4. Particularly, the frustoconical cylindrical external terminal communication portion 6 is provided so that the central axis thereof is substantially perpendicular to the wiring pattern 3.
In addition, between the wiring pattern 3 and the wiring pattern 3, between the power semiconductor element 5 and the power semiconductor element 5, and between the wiring pattern 3 and the power semiconductor element 5, they are electrically connected. Are connected by wire bonds 9 which are circuit forming means.
The wiring pattern forming surface portion and peripheral side surface portion of the metal circuit board 8, the power semiconductor element 5, the wire bond 9, and the outer surface of the frustoconical cylindrical external terminal communication portion 6 are sealed with a transfer mold resin 7. Has been. However, the surface of the metal plate 1 opposite to the surface on which the resin insulating layer 2 is provided is not sealed with the transfer mold resin 7, and the transfer mold resin 7 is not formed in the hole of the truncated conical cylindrical external terminal communication portion 6. Is not filled.

図２は、本発明の実施の形態１に係る電力用半導体モジュールにおける円錐台形筒状外部端子連通部に外部端子が挿入された状態を示す断面模式図である。
電力用半導体モジュールの円錐台形筒状外部端子連通部６は、外部端子が接続される端子であり、図２に示す外部端子が接続された電力用半導体モジュール（外部端子接続電力用半導体モジュールと記す）１０１は、上記電力用半導体モジュール１００の円錐台形筒状外部端子連通部６にコンプライアントピンの外部端子１２が挿入された状態のものである。
上記電力用半導体モジュール１００の円錐台形筒状外部端子連通部６への、外部端子１２であるコンプライアントピンの接続は、プレスフィットに代表される圧入接続で行われる。そのため、筒状外部端子連通部６と外部端子１２とは金属間接合をしている。本実施の形態における電力用半導体モジュール１０１は、外部端子１２が設けられているので、外部回路への接続が容易である。 FIG. 2 is a schematic cross-sectional view showing a state in which an external terminal is inserted into a frustoconical cylindrical external terminal communication portion in the power semiconductor module according to Embodiment 1 of the present invention.
The frustoconical cylindrical external terminal communication portion 6 of the power semiconductor module is a terminal to which an external terminal is connected, and is a power semiconductor module to which the external terminal shown in FIG. ) 101 is a state in which the external terminal 12 of the compliant pin is inserted into the frustoconical cylindrical external terminal communication portion 6 of the power semiconductor module 100.
The connection of the compliant pin, which is the external terminal 12, to the frustoconical cylindrical external terminal communication portion 6 of the power semiconductor module 100 is performed by press-fitting connection represented by press fit. Therefore, the cylindrical external terminal communication part 6 and the external terminal 12 are metal-to-metal joined. Since the power semiconductor module 101 according to the present embodiment is provided with the external terminal 12, it can be easily connected to an external circuit.

本実施の形態において、金属板１には、熱伝導性に優れた金属、例えば、アルミニウムおよびアルミニウム合金、銅および銅合金、鉄および鉄合金等、あるいは、銅／鉄−ニッケル合金／銅、アルミニウム／鉄−ニッケル合金／アルミニウム等の複合材料を用いることができる。特に、電流容量が大きい電力用半導体モジュール１００には電気伝導性に優れた銅を用いるのが好ましい。
また、金属板１の厚み、長さ、幅とは、電力用半導体モジュール１００の電流容量により、適宜決められる。すなわち、電力用半導体モジュール１００の電流容量が大きくなると、金属板１の厚みを厚くし、金属板１の長さと幅とを大きくする。
本実施の形態において、樹脂絶縁層２には、例えば、各種セラミックスや無機粉末を含有する樹脂絶縁シート、ガラス繊維を含有する樹脂絶縁シートを用いることができる。上記樹脂絶縁層２に含有される無機粉末としては、アルミナ、ベリリヤ、ボロンナイトライド、マグネシア、シリカ、窒化珪素、窒化アルミニウムが挙げられる。そして、樹脂絶縁層２の厚みは、例えば、２０〜４００μｍである。 In the present embodiment, the metal plate 1 includes a metal having excellent thermal conductivity, such as aluminum and aluminum alloy, copper and copper alloy, iron and iron alloy, or copper / iron-nickel alloy / copper, aluminum. A composite material such as / iron-nickel alloy / aluminum can be used. In particular, it is preferable to use copper having excellent electrical conductivity for the power semiconductor module 100 having a large current capacity.
Further, the thickness, length, and width of the metal plate 1 are appropriately determined depending on the current capacity of the power semiconductor module 100. That is, when the current capacity of the power semiconductor module 100 is increased, the thickness of the metal plate 1 is increased and the length and width of the metal plate 1 are increased.
In this Embodiment, the resin insulating layer 2 can use the resin insulating sheet containing various ceramics and inorganic powder, and the resin insulating sheet containing glass fiber, for example. Examples of the inorganic powder contained in the resin insulating layer 2 include alumina, beryllia, boron nitride, magnesia, silica, silicon nitride, and aluminum nitride. And the thickness of the resin insulation layer 2 is 20-400 micrometers, for example.

本実施の形態において、配線パターン３には、例えば、銅箔が用いられ、ワイヤーボンド９には、アルミニウム線が用いられる。配線パターン３に用いられる銅箔の厚み、および、ワイヤーボンド９に用いられるアルミニウム線の線径や本数も、電力用半導体モジュール１００の電流容量により、適宜決められる。   In the present embodiment, for example, a copper foil is used for the wiring pattern 3, and an aluminum wire is used for the wire bond 9. The thickness of the copper foil used for the wiring pattern 3 and the wire diameter and the number of aluminum wires used for the wire bond 9 are also appropriately determined by the current capacity of the power semiconductor module 100.

本実施の形態において、円錐台形筒状外部端子連通部６には、例えば、貫通孔を有する金属筒が用いられ、その材質は、熱伝導性と電気伝導性とに優れ、配線パターン３に、はんだ４で接合できる金属、例えば、銅および銅合金、アルミニウムおよびアルミニウム合金等のめっき品を用いるのが好ましい。めっきとしては、例えば、Ｎｉ―Ｓｎめっきが挙げられる。めっき品を用いた場合には、はんだ４との接合性をより良くしたり、表面の酸化を防いだりすることができる。
また、円錐台形筒状外部端子連通部６の上面は、トランスファーモールド樹脂７から露出しており、外部端子１２が挿入される側の径が、配線パターン３に接合される側の径より小さい。そして、円錐台形筒状外部端子連通部６の厚みは、トランスファーモールド時の成形圧力により潰れない厚みであれば良く、それは電力用半導体モジュール１００の電流容量により適宜決められる。円錐台形筒状外部端子連通部６の高さは、後で挿入接続する外部端子を十分に接続できる高さであれば良い。 In the present embodiment, for example, a metal cylinder having a through hole is used for the frustoconical cylindrical external terminal communication portion 6, and the material is excellent in thermal conductivity and electrical conductivity. It is preferable to use a metal that can be joined by the solder 4, for example, a plated product such as copper and copper alloy, aluminum and aluminum alloy. Examples of the plating include Ni—Sn plating. When a plated product is used, it is possible to improve the bondability with the solder 4 and to prevent surface oxidation.
Further, the upper surface of the frustoconical cylindrical external terminal communication portion 6 is exposed from the transfer mold resin 7, and the diameter on the side where the external terminal 12 is inserted is smaller than the diameter on the side where the wiring pattern 3 is joined. The thickness of the frustoconical cylindrical external terminal communication portion 6 may be any thickness that does not collapse due to the molding pressure during transfer molding, and is appropriately determined by the current capacity of the power semiconductor module 100. The height of the frustoconical cylindrical external terminal communication portion 6 may be a height that can sufficiently connect external terminals to be inserted and connected later.

また、円錐台形筒状外部端子連通部６の小さい方の内径は、後で挿入接続する外部端子１２の挿入部の外径から決まり、少なくとも、外部端子１２を取り付けることができる内径であれば良い。そして、内径が小さい方の円錐台形筒状外部端子連通部６の内壁側端部を面取りして広げても良い。このようにすると、円錐台形筒状外部端子連通部６への外部端子１２の挿入が容易になる。
また、円錐台形筒状外部端子連通部６の傾斜角度、すなわち円錐台形筒状外部端子連通部６の内側壁面と配線パターン３面に対する直角方向との角度は、５度〜３０度が好ましい。
この角度が５度未満では、従来の筒状外部端子連通部とほとんど変わらず、不要な外力が加わった場合に圧入接続された外部端子１２がはずれるのを、防止する効果が小さい。この角度が３０度より大きいと、外部端子１２が円錐台形筒状外部端子連通部６に接触する面積の減少を防止するため、外部端子１２の弾性を有する挿入部分を大きくする必要があり、外部端子１２を筒状外部端子連通部６に挿入しにくくなるとともに、外部端子１２を筒状外部端子連通部６から取り外すのも難しくなる。
本実施の形態において、円錐台形筒状外部端子連通部６に挿入する外部端子１２には、圧入接続するコンプライアントピンが用いられるが、圧入接続できるものであればこれに限定されない。また、外部端子１２には熱伝導性と電気伝導性に優れた金属が用いられ、特に、銅系の材料が好ましい。外部端子１２の断面積は、電力用半導体モジュール１００の電流容量により、適宜決められる。 Further, the smaller inner diameter of the frustoconical cylindrical external terminal communication portion 6 is determined from the outer diameter of the insertion portion of the external terminal 12 to be inserted and connected later, and at least the inner diameter to which the external terminal 12 can be attached. . Then, the inner wall side end of the frustoconical cylindrical external terminal communication portion 6 having the smaller inner diameter may be chamfered and widened. If it does in this way, insertion of the external terminal 12 to the frustoconical cylindrical external terminal communication part 6 becomes easy.
In addition, the inclination angle of the frustoconical cylindrical external terminal communication portion 6, that is, the angle between the inner wall surface of the frustoconical cylindrical external terminal communication portion 6 and the direction perpendicular to the surface of the wiring pattern 3 is preferably 5 degrees to 30 degrees.
If this angle is less than 5 degrees, it is almost the same as the conventional cylindrical external terminal communication portion, and the effect of preventing the external terminal 12 press-fitted and connected when an unnecessary external force is applied is small. If this angle is larger than 30 degrees, it is necessary to enlarge the insertion portion having the elasticity of the external terminal 12 in order to prevent a reduction in the area in which the external terminal 12 contacts the frustoconical cylindrical external terminal communication portion 6. It becomes difficult to insert the terminal 12 into the cylindrical external terminal communication portion 6, and it becomes difficult to remove the external terminal 12 from the cylindrical external terminal communication portion 6.
In the present embodiment, a compliant pin that is press-fitted and connected is used for the external terminal 12 that is inserted into the frustoconical cylindrical external terminal communication portion 6. The external terminal 12 is made of a metal having excellent thermal conductivity and electrical conductivity, and a copper-based material is particularly preferable. The cross-sectional area of the external terminal 12 is appropriately determined depending on the current capacity of the power semiconductor module 100.

本実施の形態において、トランスファーモールド樹脂７には、例えば、フィラーとしてシリカ粉末が充填されたエポキシ樹脂が用いられる。トランスファーモールド樹脂７において、充填されるシリカ粉末の含有率は、電力用半導体モジュール１００に用いられる部材の熱膨張係数などを考慮して最適な量が選定される。
例えば、配線パターン３と金属板１とに銅を用いた場合、トランスファーモールド樹脂７の熱膨張係数を銅の熱膨張係数である１６ｐｐｍ／℃に合わすように、エポキシ樹脂へのシリカ粉末の充填量が設定される。このようにすることにより、反りのない電力用半導体モジュールが得られる。
また、トランスファーモールド樹脂７の放熱性を向上させる場合は、フィラーとしてシリカ粉末の代わりにアルミナ粉末を用いることが好ましい。 In the present embodiment, for example, an epoxy resin filled with silica powder as a filler is used for the transfer mold resin 7. In the transfer mold resin 7, an optimal amount of the silica powder to be filled is selected in consideration of a coefficient of thermal expansion of a member used for the power semiconductor module 100.
For example, when copper is used for the wiring pattern 3 and the metal plate 1, the amount of silica powder filled in the epoxy resin so that the thermal expansion coefficient of the transfer mold resin 7 matches the thermal expansion coefficient of copper of 16 ppm / ° C. Is set. By doing so, a power semiconductor module without warping can be obtained.
Moreover, when improving the heat dissipation of transfer mold resin 7, it is preferable to use an alumina powder instead of silica powder as a filler.

本実施の形態における電力用半導体モジュールの製造方法の一例について説明する。
本実施の形態の電力用半導体モジュール１００は、例えば、厚み３ｍｍのアルミニウム板に、Ｂステージ状態のアルミナ粉末を含有するエポキシ樹脂シートを載せ、その上に厚み０．３ｍｍの銅箔を重ねる。そして、アルミニウム板とアルミナ粉末を含有するエポキシ樹脂シートと銅箔とを積層したものを加熱・加圧して、アルミニウム板と銅箔とをアルミナ粉末を含有するエポキシ樹脂シートで接合する。次に、銅箔をエッチングして配線パターン３を形成する。このようにして、アルミニウムの金属板１とアルミナ粉末を含有するエポキシ樹脂の樹脂絶縁層２と銅の配線パターン３とからなる金属回路基板８を形成する。その後、図示していないが、ソルダーレジストを所定の場所に形成する。しかし、この工程はなくても良い。 An example of a method for manufacturing a power semiconductor module in the present embodiment will be described.
In the power semiconductor module 100 of the present embodiment, for example, an epoxy resin sheet containing alumina powder in a B-stage state is placed on an aluminum plate having a thickness of 3 mm, and a copper foil having a thickness of 0.3 mm is stacked thereon. And what laminated | stacked the epoxy resin sheet and copper foil containing an aluminum plate, an alumina powder is heated and pressurized, and the aluminum plate and copper foil are joined by the epoxy resin sheet containing an alumina powder. Next, the copper foil is etched to form the wiring pattern 3. In this manner, a metal circuit board 8 composed of the aluminum metal plate 1, the resin insulating layer 2 of epoxy resin containing alumina powder, and the copper wiring pattern 3 is formed. Thereafter, although not shown, a solder resist is formed at a predetermined location. However, this step is not necessary.

次に、配線パターン３上の所定の場所に設けられる素子搭載部に電力用半導体素子５を、そして配線パターン３上の所定の場所に設けられる筒状外部端子連通部との接合部に円錐台形筒状外部端子連通部６を、各々はんだ４を用いて接合する。
そして、配線パターン３と配線パターン３との間、電力用半導体素子５と電力用半導体素子５との間、および、配線パターン３と電力用半導体素子５との間において、導通が必要な箇所をアルミニウムのワイヤーボンド９で接続する。
また、本実施の形態では、導通が必要な箇所をワイヤーボンド９で接続しているが、これに限定されるものではなく、これ以外の電気的接続を行えるものであっても良い。 Next, the power semiconductor element 5 is mounted on the element mounting portion provided at a predetermined location on the wiring pattern 3, and the frustoconical shape is formed at the junction with the cylindrical external terminal communication portion provided at a predetermined location on the wiring pattern 3 The cylindrical external terminal communication portions 6 are joined together using solder 4.
Then, between the wiring pattern 3 and the wiring pattern 3, between the power semiconductor element 5 and the power semiconductor element 5, and between the wiring pattern 3 and the power semiconductor element 5, places where conduction is required Connect with aluminum wire bond 9.
Moreover, in this Embodiment, although the location which needs conduction | electrical_connection is connected by the wire bond 9, it is not limited to this, What can perform electrical connection other than this may be used.

次に、ワイヤーボンディングされた電力用半導体素子５と円錐台形筒状外部端子連通部６とを搭載した金属回路基板８は、金型にセットされ、トランスファーモールド法により、例えば、シリカ粉末が充填されたエポキシ樹脂系のトランスファーモールド樹脂７で封止され、電力用半導体モジュール１００が完成する。   Next, the metal circuit board 8 mounted with the power-bonded power semiconductor element 5 and the frustoconical cylindrical external terminal communication portion 6 is set in a mold and filled with, for example, silica powder by a transfer molding method. The power semiconductor module 100 is completed by sealing with the epoxy resin transfer mold resin 7.

本実施の形態における電力用半導体モジュール１００の製造方法では、金属回路基板８の配線パターン３に、電力用半導体素子５や円錐台形筒状外部端子連通部６などの全ての部品をはんだ接合した後に、所定の部位間をワイヤーボンディングしているが、金属回路基板８の配線パターン３に、全ての電力用半導体素子５のみを接合した後に、所定の部位間のワイヤーボンディングを行い、ワイヤーボンディング終了後に、配線パターン３に、円錐台形筒状外部端子連通部６を接合しても良い。   In the manufacturing method of the power semiconductor module 100 in the present embodiment, after all the components such as the power semiconductor element 5 and the frustoconical cylindrical external terminal communication portion 6 are soldered to the wiring pattern 3 of the metal circuit board 8. The wire bonding between the predetermined parts is performed, but after bonding all the power semiconductor elements 5 only to the wiring pattern 3 of the metal circuit board 8, the wire bonding between the predetermined parts is performed, and after the wire bonding is completed. The frustoconical cylindrical external terminal communication portion 6 may be joined to the wiring pattern 3.

このようにすると、ワイヤーボンディング時におけるワイヤーボンディング装置の制約がないので、例え高さが高い円錐台形筒状外部端子連通部６を用いる場合でも、円錐台形筒状外部端子連通部６の近傍にワイヤーボンディングすることができ、高さが高い筒状外部端子連通部６を用いた場合に生じる、部品の実装面積の増大を防止でき、電力用半導体モジュールのさらなる小型化が実現できる。
この製造方法では、円錐台形筒状外部端子連通部６の接合は、すでに電力用半導体素子５が接合された配線パターン３に行うので、低融点はんだを用いるか、もしくは、はんだ以外の接合方法を用いる。はんだ以外の接合方法としては、例えば、銀ペーストで接着する方法や、超音波接合による方法が挙げられる。 In this case, since there is no restriction of the wire bonding apparatus at the time of wire bonding, even when the frustoconical cylindrical external terminal communication portion 6 having a high height is used, the wire is placed near the frustoconical cylindrical external terminal communication portion 6. Bonding is possible, and an increase in the mounting area of components that occurs when the cylindrical external terminal communication portion 6 having a high height is used can be prevented, and further miniaturization of the power semiconductor module can be realized.
In this manufacturing method, the frustoconical cylindrical external terminal communication portion 6 is joined to the wiring pattern 3 to which the power semiconductor element 5 has already been joined. Therefore, a low melting point solder is used, or a joining method other than solder is used. Use. Examples of bonding methods other than solder include a method of bonding with a silver paste and a method of ultrasonic bonding.

本実施の形態の電力用半導体モジュール１００では、金属回路基板８の配線パターン面に外部端子１２を接続する端子が設けられているが、この端子が円錐台形筒状外部端子連通部６であるので、コンプライアントピンの外部端子１２をプレスフィット等の圧入で接続ができる。
すなわち、本実施の形態の電力用半導体モジュール１００は、円錐台形筒状外部端子連通部６が外部端子１２を圧入接続できる構造であるので、外部端子１２の取り外しが容易であり、補修性に優れている。また、本実施の形態の電力用半導体モジュール１００は、円錐台形筒状外部端子連通部６の入口側の径が底部の径より小さくなっているので、通常の使用では、円錐台形筒状外部端子連通部６から外部端子１２がはずれることがなく、接続の信頼性が高い。
また、本実施の形態の電力用半導体モジュール１０１も、電力用半導体モジュール１００と同様な効果を有する。 In the power semiconductor module 100 of the present embodiment, a terminal for connecting the external terminal 12 is provided on the wiring pattern surface of the metal circuit board 8, and this terminal is the frustoconical cylindrical external terminal communication portion 6. The external terminal 12 of the compliant pin can be connected by press fitting such as press fit.
That is, the power semiconductor module 100 according to the present embodiment has a structure in which the frustoconical cylindrical external terminal communication portion 6 can be press-fitted and connected to the external terminal 12, so that the external terminal 12 can be easily removed and has excellent repairability. ing. Further, in the power semiconductor module 100 of the present embodiment, the diameter of the frustoconical cylindrical external terminal communication portion 6 on the inlet side is smaller than the diameter of the bottom portion. The external terminal 12 is not detached from the communication part 6 and the connection reliability is high.
Also, the power semiconductor module 101 of the present embodiment has the same effect as the power semiconductor module 100.

本実施の形態の電力用半導体装置１００では、回路基板に金属回路基板を用いているが、回路基板に、例えば、高熱伝導絶縁層であるセラミック板と、セラミック板の一方の面に設けられた銅箔の配線パターンと、セラミック板の他方の面に設けられた銅箔の金属放熱体とからなる、セラミック回路基板を用いても良い。   In the power semiconductor device 100 according to the present embodiment, a metal circuit board is used as the circuit board. For example, the circuit board is provided on one surface of the ceramic plate which is a high thermal conductive insulating layer and the ceramic plate. A ceramic circuit board composed of a copper foil wiring pattern and a copper foil metal radiator provided on the other surface of the ceramic plate may be used.

実施の形態２．
図３は、本発明の実施の形態２に係る電力用半導体モジュールの断面模式図である。
図３に示すように、本実施の形態の電力用半導体モジュール２００は、円錐台形筒状外部端子連通部６ａの配線パターン３に接合される側に底体が設けられている以外、実施の形態１の電力用半導体モジュール１００と同様である。
図４は、本発明の実施の形態２に係る電力用半導体モジュールにおける円錐台形筒状外部端子連通部に外部端子が挿入された状態を示す断面模式図である。
図４に示す外部端子接続電力用半導体モジュール２０１は、上記電力用半導体モジュール２００の円錐台形筒状外部端子連通部６にコンプライアントピンの外部端子１２が挿入された状態のものである。 Embodiment 2. FIG.
FIG. 3 is a schematic cross-sectional view of a power semiconductor module according to Embodiment 2 of the present invention.
As shown in FIG. 3, the power semiconductor module 200 of the present embodiment is the same as the embodiment except that the bottom body is provided on the side of the frustoconical cylindrical external terminal communication portion 6 a that is joined to the wiring pattern 3. 1 is the same as the power semiconductor module 100 of FIG.
FIG. 4 is a schematic cross-sectional view showing a state in which an external terminal is inserted into a frustoconical cylindrical external terminal communication portion in the power semiconductor module according to Embodiment 2 of the present invention.
The external terminal-connected power semiconductor module 201 shown in FIG. 4 is a state in which the external terminal 12 of the compliant pin is inserted into the truncated cone-shaped cylindrical external terminal communication portion 6 of the power semiconductor module 200.

本実施の形態の電力用半導体モジュール２００は、実施の形態１の電力用半導体モジュール１００と同様な効果がある。また、本実施の形態の電力用半導体モジュール２０１は、実施の形態１の電力用半導体モジュール１０１と同様な効果がある。それに加え、本実施の形態の電力用半導体モジュール２００，２０１は、円錐台形筒状外部端子連通部６ａに設けられた底体が配線パターン３に接合されるので、円錐台形筒状外部端子連通部６ａと配線パターン３との接合面積が大きく、はんだの付きが良くなり、円錐台形筒状外部端子連通部６ａと配線パターン３との接合信頼性が向上する。   The power semiconductor module 200 of the present embodiment has the same effects as the power semiconductor module 100 of the first embodiment. Further, the power semiconductor module 201 of the present embodiment has the same effects as the power semiconductor module 101 of the first embodiment. In addition, in the power semiconductor modules 200 and 201 of the present embodiment, since the bottom body provided in the truncated cone-shaped cylindrical external terminal communication portion 6a is joined to the wiring pattern 3, the truncated cone-shaped cylindrical external terminal communication portion The bonding area between 6a and the wiring pattern 3 is large, the soldering is improved, and the bonding reliability between the frustoconical cylindrical external terminal communication portion 6a and the wiring pattern 3 is improved.

実施の形態３．
図５は、本発明の実施の形態３に係る電力用半導体モジュールにおける円錐台形筒状外部端子連通部付近の部分断面模式図である。
図５に示すように、本実施の形態の電力用半導体モジュール３００では、円錐台形筒状外部端子連通部６の孔部にゲル１１が充填されている以外、実施の形態１の電力用半導体モジュール１００と同様である。
本実施の形態で用いられるゲル１１は、針入度４０〜１５０／１０ｍｍ程度のものが好ましい。また、ゲル１１は、導電性または絶縁性のいずれであっても良い。特に、導電性のゲルを用いると、外部端子１２と円錐台形筒状外部端子連通部６との物理的接触のみならず、ゲル１１を介して導電できるので、外部端子１２と円錐台形筒状外部端子連通部６との接触抵抗が低下し、電流容量を大きくできる。但し、絶縁性のゲルを用いても、ゲル１１の針入度が大きいので、外部端子１２と円錐台形筒状外部端子連通部６との十分な電気接触を確保できる。 Embodiment 3 FIG.
FIG. 5 is a partial cross-sectional schematic view of the vicinity of the frustoconical cylindrical external terminal communication portion in the power semiconductor module according to Embodiment 3 of the present invention.
As shown in FIG. 5, in the power semiconductor module 300 of the present embodiment, the power semiconductor module of the first embodiment except that the hole of the frustoconical cylindrical external terminal communication portion 6 is filled with the gel 11. 100.
The gel 11 used in the present embodiment preferably has a penetration of about 40 to 150/10 mm. The gel 11 may be either conductive or insulating. In particular, when a conductive gel is used, not only physical contact between the external terminal 12 and the frustoconical cylindrical external terminal communication portion 6 but also conduction through the gel 11, the external terminal 12 and the frustoconical cylindrical external The contact resistance with the terminal communication portion 6 is reduced, and the current capacity can be increased. However, even if an insulating gel is used, since the penetration of the gel 11 is large, sufficient electrical contact between the external terminal 12 and the frustoconical cylindrical external terminal communication portion 6 can be ensured.

本実施の形態の電力用半導体モジュール３００では、実施の形態１の電力用半導体モジュール１００と同様な効果があるとともに、円錐台形筒状外部端子連通部６の孔部にゲル１１が充填されているので、湿度的に厳しい環境で、電力用半導体モジュールを用いても、円錐台形筒状外部端子連通部６の内部への水分の浸入を防止でき、円錐台形筒状外部端子連通部６の内部や配線パターンの腐食が防止できる。また、ゲル１１の充填は円錐台形筒状外部端子連通部６と挿入される外部端子１２との熱抵抗を下げる。
この円錐台形筒状外部端子連通部の孔部へのゲル１１の充填は、実施の形態２の電力用半導体モジュール２００にも適用でき、同様な効果が得られる。 The power semiconductor module 300 according to the present embodiment has the same effects as those of the power semiconductor module 100 according to the first embodiment, and the gel 11 is filled in the hole of the truncated cone-shaped cylindrical external terminal communication portion 6. Therefore, even if a power semiconductor module is used in a harsh environment, moisture can be prevented from entering the inside of the frustoconical cylindrical external terminal communication portion 6, and the inside of the frustoconical cylindrical external terminal communication portion 6 can be prevented. Corrosion of the wiring pattern can be prevented. Further, the filling of the gel 11 lowers the thermal resistance between the frustoconical cylindrical external terminal communication portion 6 and the external terminal 12 to be inserted.
The filling of the gel 11 into the hole of the frustoconical cylindrical external terminal communication portion can also be applied to the power semiconductor module 200 of the second embodiment, and the same effect can be obtained.

実施の形態４．
図６は、本発明の実施の形態４に係る電力用半導体モジュールにおける円錐台形筒状外部端子連通部付近の部分断面模式図である。
図６に示すように、本実施の形態の電力用半導体モジュール４００では、円錐台形筒状外部端子連通部６の内側部分と配線パターン３に接合される部分とトランスファーモールド樹脂７から露出する部分とにのみ、めっき１３が設けられている以外、実施の形態１の電力用半導体モジュール１００と同様である。
本実施の形態において、円錐台形筒状外部端子連通部６の内側部分と配線パターン３に接合される部分とトランスファーモールド樹脂７から露出する部分とに設けられるめっき１３は、ニッケルめっきや錫めっきが好ましい。 Embodiment 4 FIG.
FIG. 6 is a partial cross-sectional schematic view of the vicinity of a truncated cone-shaped cylindrical external terminal communication portion in a power semiconductor module according to Embodiment 4 of the present invention.
As shown in FIG. 6, in the power semiconductor module 400 of the present embodiment, the inner part of the frustoconical cylindrical external terminal communication part 6, the part joined to the wiring pattern 3, and the part exposed from the transfer mold resin 7 The power semiconductor module 100 is the same as that of the first embodiment except that the plating 13 is provided.
In the present embodiment, the plating 13 provided on the inner portion of the frustoconical cylindrical external terminal communication portion 6, the portion joined to the wiring pattern 3 and the portion exposed from the transfer mold resin 7 is made of nickel plating or tin plating. preferable.

本実施の形態の電力用半導体モジュール４００では、実施の形態１の電力用半導体モジュール１００と同様な効果があるとともに、円錐台形筒状外部端子連通部６の内側部分と配線パターン３に接合される部分とトランスファーモールド樹脂７から露出する部分とにのみめっき１３が設けられているので、円錐台形筒状外部端子連通部６とトランスファーモールド樹脂７との密着性が優れており、これらの界面に隙間の発生がなく、この部分へ水分が浸入しないので、封止の信頼性が向上する。この円錐台形筒状外部端子連通部６の内側と配線パターン３に接合される部分とトランスファーモールド樹脂７から露出する部分とにのみめっき１３を設けることは、実施の形態２の電力用半導体モジュール２００にも適用でき、同様な効果が得られる。   The power semiconductor module 400 according to the present embodiment has the same effects as those of the power semiconductor module 100 according to the first embodiment, and is joined to the wiring pattern 3 and the inner portion of the frustoconical cylindrical external terminal communication portion 6. Since the plating 13 is provided only on the portion and the portion exposed from the transfer mold resin 7, the adhesion between the frustoconical cylindrical external terminal communication portion 6 and the transfer mold resin 7 is excellent, and there is a gap at the interface between them. Since no moisture occurs and moisture does not enter this portion, sealing reliability is improved. The provision of the plating 13 only on the inside of the frustoconical cylindrical external terminal communication portion 6, the portion joined to the wiring pattern 3, and the portion exposed from the transfer mold resin 7 is the power semiconductor module 200 of the second embodiment. The same effect can be obtained.

実施の形態５．
図７は、本発明の実施の形態５に係る電力用半導体モジュールにおける円錐台形筒状外部端子連通部付近の部分断面模式図である。
図７に示すように、本実施の形態の電力用半導体モジュール５００では、円錐台形筒状外部端子連通部６の内側部分と配線パターン３に接合される部分とトランスファーモールド樹脂７から露出する部分とにのみめっき１３を設けた以外、実施の形態３の電力用半導体モジュール３００と同様である。
本実施の形態の電力用半導体モジュール５００は、円錐台形筒状外部端子連通部６の孔部にゲル１１が充填されているので、実施の形態３の電力用半導体モジュール３００と同様に、円錐台形筒状外部端子連通部６の内部への水分の浸入を防止でき、円錐台形筒状外部端子連通部６の孔部や配線パターン３の腐食が防止できる。
それに加え、本実施の形態の電力用半導体モジュール５００は、円錐台形筒状外部端子連通部６の内側と配線パターン３に接合される部分とトランスファーモールド樹脂７から露出する部分とにのみ、めっき１３が設けられているので、円錐台形筒状外部端子連通部６とトランスファーモールド樹脂７との密着性が優れており、これらの界面に隙間の発生がなく、この部分へ水分が浸入しないので、封止の信頼性が向上している。
本実施の形態の構造は、実施の形態２の電力用半導体モジュール２００にも適用でき、同様な効果が得られる。 Embodiment 5 FIG.
FIG. 7 is a partial schematic cross-sectional view of the vicinity of a truncated cone-shaped cylindrical external terminal communication portion in a power semiconductor module according to Embodiment 5 of the present invention.
As shown in FIG. 7, in the power semiconductor module 500 of the present embodiment, the inner part of the frustoconical cylindrical external terminal communication part 6, the part joined to the wiring pattern 3, and the part exposed from the transfer mold resin 7 The power semiconductor module 300 of the third embodiment is the same as that of the third embodiment except that the plating 13 is provided only on the surface.
In the power semiconductor module 500 of the present embodiment, since the gel 11 is filled in the hole of the frustoconical cylindrical external terminal communication portion 6, the frustoconical shape is the same as that of the power semiconductor module 300 of the third embodiment. Intrusion of moisture into the inside of the cylindrical external terminal communication portion 6 can be prevented, and corrosion of the hole portion of the frustoconical cylindrical external terminal communication portion 6 and the wiring pattern 3 can be prevented.
In addition, the power semiconductor module 500 of the present embodiment has plating 13 only on the inside of the frustoconical cylindrical external terminal communication portion 6, the portion joined to the wiring pattern 3, and the portion exposed from the transfer mold resin 7. Therefore, the adhesion between the frustoconical cylindrical external terminal communication portion 6 and the transfer mold resin 7 is excellent, there is no gap at the interface, and moisture does not enter this portion. The reliability of stopping is improved.
The structure of the present embodiment can also be applied to the power semiconductor module 200 of the second embodiment, and the same effect can be obtained.

本発明に係る電力用半導体モジュールは、電力用半導体モジュールの端子と外部端子との、接続と脱着とが容易であるとともに、不必要に外れることがないので、補修性と信頼性が要求される電力用半導体装置に有効に利用できる。   The power semiconductor module according to the present invention is easy to connect and detach between the terminals of the power semiconductor module and the external terminals and does not unnecessarily come out, so that repairability and reliability are required. It can be effectively used for power semiconductor devices.

本発明の実施の形態１に係る電力用半導体モジュールの断面模式図である。It is a cross-sectional schematic diagram of the power semiconductor module which concerns on Embodiment 1 of this invention. 本発明の実施の形態１に係る電力用半導体モジュールにおける円錐台形筒状外部端子連通部に外部端子が挿入された状態を示す断面模式図である。It is a cross-sectional schematic diagram which shows the state by which the external terminal was inserted in the truncated cone shaped cylindrical external terminal communication part in the power semiconductor module which concerns on Embodiment 1 of this invention. 本発明の実施の形態２に係る電力用半導体モジュールの断面模式図である。It is a cross-sectional schematic diagram of the power semiconductor module which concerns on Embodiment 2 of this invention. 本発明の実施の形態２に係る電力用半導体モジュールにおける円錐台形筒状外部端子連通部に外部端子が挿入された状態を示す断面模式図である。It is a cross-sectional schematic diagram which shows the state by which the external terminal was inserted in the frustoconical cylindrical external terminal communication part in the power semiconductor module which concerns on Embodiment 2 of this invention. 本発明の実施の形態３に係る電力用半導体モジュールにおける円錐台形筒状外部端子連通部付近の部分断面模式図である。It is a partial cross section schematic diagram of the frustum-shaped cylindrical external terminal communication part vicinity in the power semiconductor module which concerns on Embodiment 3 of this invention. 本発明の実施の形態４に係る電力用半導体モジュールにおける円錐台形筒状外部端子連通部付近の部分断面模式図である。It is a partial cross section schematic diagram of the frustum-shaped cylindrical external terminal communication part vicinity in the power semiconductor module which concerns on Embodiment 4 of this invention. 本発明の実施の形態５に係る電力用半導体モジュールにおける円錐台形筒状外部端子連通部付近の部分断面模式図である。It is a partial cross section schematic diagram of the frustum-shaped cylindrical external terminal communication part vicinity in the power semiconductor module which concerns on Embodiment 5 of this invention.

符号の説明Explanation of symbols

１ 金属板、２ 樹脂絶縁層、３ 配線パターン、４ はんだ、
５ 電力用半導体素子、６，６ａ 円錐台形筒状外部端子連通部、
７ トランスファーモールド樹脂、８ 金属回路基板、９ ワイヤーボンド、
１１ ゲル、１２ 外部端子、１３ めっき、
１００，２００，３００，４００，５００ 電力用半導体モジュール、
１０１，２０１ 外部端子接続電力用半導体モジュール。 1 metal plate, 2 resin insulation layer, 3 wiring pattern, 4 solder,
5 Power semiconductor element, 6, 6a Frustum cylindrical external terminal communication part,
7 Transfer mold resin, 8 Metal circuit board, 9 Wire bond,
11 gel, 12 external terminal, 13 plating,
100, 200, 300, 400, 500 Power semiconductor module,
101, 201 External terminal connection power semiconductor module.

Claims (8)

金属放熱体とこの金属放熱体の一方の面に接合した高熱伝導絶縁層とこの高熱伝導絶縁層における上記金属放熱体と接合した面と対向する面に設けられた配線パターンとからなる回路基板と、上記配線パターンの素子搭載部に接合された電力用半導体素子と、上記配線パターンに対して略垂直に接合された筒状外部端子連通部と、上記電力用半導体素子間、上記配線パターン間、上記電力用半導体素子と上記配線パターンとの間の各間を電気的に接続する回路形成手段と、少なくとも、上記配線パターンと上記電力用半導体素子と上記筒状外部端子連通部と上記回路形成手段とを封止したトランスファーモールド樹脂とを備えた電力用半導体モジュールであって、上記筒状外部端子連通部が金属筒で形成された円錐台形筒状外部端子連通部であり、上記円錐台形筒状外部端子連通部の上記トランスファーモールド樹脂から露出した側の径が上記配線パターンに接合した側の径より小さい電力用半導体モジュール。   A circuit board comprising a metal radiator, a high thermal conductive insulating layer bonded to one surface of the metal radiator, and a wiring pattern provided on a surface of the high thermal conductive insulating layer facing the surface bonded to the metal radiator; A power semiconductor element joined to the element mounting portion of the wiring pattern; a cylindrical external terminal communication part joined substantially perpendicular to the wiring pattern; and between the power semiconductor elements, between the wiring patterns, Circuit forming means for electrically connecting each of the power semiconductor element and the wiring pattern; at least the wiring pattern, the power semiconductor element, the cylindrical external terminal communication portion, and the circuit forming means; A transfer mold resin, and the cylindrical external terminal communication portion is a frustoconical cylindrical external terminal communication portion formed of a metal cylinder. Ri, a power semiconductor module size of the exposed side is smaller than the diameter of the side joined to the wiring pattern from the frustoconical tubular external terminal communication section of the transfer molding resin. 円錐台形筒状外部端子連通部の内側壁面と配線パターン面に対する直角方向との角度が５度〜３０度であることを特徴とする請求項１に記載の電力用半導体モジュール。   2. The power semiconductor module according to claim 1, wherein an angle between an inner wall surface of the frustoconical cylindrical external terminal communication portion and a direction perpendicular to the wiring pattern surface is 5 degrees to 30 degrees. 回路基板が、金属放熱体である金属板とこの金属板の一方の面に接合された高熱伝導絶縁層である樹脂絶縁層とこの樹脂絶縁層における上記金属板に接合された面と対向する面に設けられた配線パターンとからなる金属回路基板であることを特徴とする請求項１または請求項２に記載の電力用半導体モジュール。   A circuit board is a metal plate that is a metal radiator, a resin insulating layer that is a high thermal conductive insulating layer bonded to one surface of the metal plate, and a surface that faces the surface bonded to the metal plate in the resin insulating layer 3. The power semiconductor module according to claim 1, wherein the power semiconductor module is a metal circuit board made of a wiring pattern provided on the substrate. 回路基板が、高熱伝導絶縁層であるセラミック板とこのセラミック板の一方の面に接合された金属放熱体である金属箔と上記セラミック板の他方の面に設けられた配線パターンとからなるセラミック回路基板であることを特徴とする請求項１または請求項２に記載の電力用半導体モジュール。   A circuit board is a ceramic circuit comprising a ceramic plate as a high thermal conductive insulating layer, a metal foil as a metal radiator bonded to one surface of the ceramic plate, and a wiring pattern provided on the other surface of the ceramic plate. The power semiconductor module according to claim 1, wherein the power semiconductor module is a substrate. 円錐台形筒状外部端子連通部の配線パターンに接合される側に底体を設けたことを特徴とする請求項１〜請求項４のいずれか１項に記載の電力用半導体モジュール。   The power semiconductor module according to any one of claims 1 to 4, wherein a bottom body is provided on a side of the frustoconical cylindrical external terminal communication portion that is joined to the wiring pattern. 円錐台形筒状外部端子連通部の孔部にゲルが充填されたことを特徴とする請求項１〜請求項５のいずれか１項に記載の電力用半導体モジュール。   The power semiconductor module according to any one of claims 1 to 5, wherein the hole of the frustoconical cylindrical external terminal communication portion is filled with gel. 円錐台形筒状外部端子連通部の、内側部分と配線パターンに接合される部分とトランスファーモールド樹脂から露出する部分とにのみ、めっきが設けられたことを特徴とする請求項１〜請求項６のいずれか１項に記載の電力用半導体モジュール。   7. The plating according to claim 1, wherein plating is provided only on the inner portion, the portion joined to the wiring pattern, and the portion exposed from the transfer mold resin of the frustoconical cylindrical external terminal communication portion. The power semiconductor module according to claim 1. 円錐台形筒状外部端子連通部に、外部端子が圧入接続されたことを特徴とする請求項１〜請求項７のいずれか１項に記載の電力用半導体モジュール。   The power semiconductor module according to any one of claims 1 to 7, wherein an external terminal is press-fitted and connected to the frustoconical cylindrical external terminal communicating portion.
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