JP2010123926A5 - Display device - Google Patents
Display device Download PDFInfo
- Publication number
- JP2010123926A5 JP2010123926A5 JP2009239998A JP2009239998A JP2010123926A5 JP 2010123926 A5 JP2010123926 A5 JP 2010123926A5 JP 2009239998 A JP2009239998 A JP 2009239998A JP 2009239998 A JP2009239998 A JP 2009239998A JP 2010123926 A5 JP2010123926 A5 JP 2010123926A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- display device
- region
- contact
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Claims (1)
前記ゲート電極上のゲート絶縁層と、A gate insulating layer on the gate electrode;
前記ゲート絶縁層上の第１の半導体層と、A first semiconductor layer on the gate insulating layer;
前記第１の半導体層上の第２の半導体層と、A second semiconductor layer on the first semiconductor layer,
前記第２の半導体層上の第３の半導体層と、A third semiconductor layer on the second semiconductor layer,
前記第２の半導体層上の絶縁層と、を有し、An insulating layer on the second semiconductor layer,
前記第２の半導体層は、前記絶縁層に接する領域と前記第３の半導体層に接する領域とを有し、The second semiconductor layer has a region in contact with the insulating layer and a region in contact with the third semiconductor layer,
前記第２の半導体層は複数の凸部を有し、The second semiconductor layer has a plurality of convex portions,
前記絶縁層は前記複数の凸部に接する領域を有し、The insulating layer has a region in contact with the plurality of convex portions,
前記第３の半導体層は前記複数の凸部に接する領域を有することを特徴とする表示装置。The display device, wherein the third semiconductor layer has a region in contact with the plurality of convex portions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009239998A JP5595004B2 (en) | 2008-10-21 | 2009-10-19 | Display device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008270861 | 2008-10-21 | ||
| JP2008270861 | 2008-10-21 | ||
| JP2009239998A JP5595004B2 (en) | 2008-10-21 | 2009-10-19 | Display device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010123926A JP2010123926A (en) | 2010-06-03 |
| JP2010123926A5 true JP2010123926A5 (en) | 2012-11-22 |
| JP5595004B2 JP5595004B2 (en) | 2014-09-24 |
Family
ID=42324962
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009239998A Expired - Fee Related JP5595004B2 (en) | 2008-10-21 | 2009-10-19 | Display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5595004B2 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8598586B2 (en) | 2009-12-21 | 2013-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and manufacturing method thereof |
| US8778745B2 (en) * | 2010-06-29 | 2014-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US8440548B2 (en) * | 2010-08-06 | 2013-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of microcrystalline silicon film and manufacturing method of thin film transistor |
| CN102386072B (en) * | 2010-08-25 | 2016-05-04 | 株式会社半导体能源研究所 | The manufacture method of microcrystalline semiconductor film and the manufacture method of semiconductor device |
| TWI538218B (en) * | 2010-09-14 | 2016-06-11 | 半導體能源研究所股份有限公司 | Thin film transistor |
| US8394685B2 (en) | 2010-12-06 | 2013-03-12 | Semiconductor Energy Laboratory Co., Ltd. | Etching method and manufacturing method of thin film transistor |
| US9048327B2 (en) * | 2011-01-25 | 2015-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Microcrystalline semiconductor film, method for manufacturing the same, and method for manufacturing semiconductor device |
| CN107132724B (en) * | 2017-05-10 | 2019-11-26 | 深圳市华星光电技术有限公司 | A kind of preparation method of mask plate and array substrate |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3294438B2 (en) * | 1994-07-14 | 2002-06-24 | 沖電気工業株式会社 | Method for forming polycrystalline semiconductor thin film and method for forming thin film transistor using the same |
| JP3173462B2 (en) * | 1998-06-09 | 2001-06-04 | 日本電気株式会社 | Thin film transistor |
| JP2001102587A (en) * | 1999-09-28 | 2001-04-13 | Toshiba Corp | Thin film transistor and fabrication thereof and method for forming semiconductor thin film |
| JP2001308339A (en) * | 2000-02-18 | 2001-11-02 | Sharp Corp | Thin film transistor |
| GB0017471D0 (en) * | 2000-07-18 | 2000-08-30 | Koninkl Philips Electronics Nv | Thin film transistors and their manufacture |
| JP2002083971A (en) * | 2000-09-08 | 2002-03-22 | Nec Kagoshima Ltd | Method for manufacturing thin film transistor |
| JP3716755B2 (en) * | 2001-04-05 | 2005-11-16 | 株式会社日立製作所 | Active matrix display device |
| JP4136482B2 (en) * | 2002-06-20 | 2008-08-20 | キヤノン株式会社 | Organic semiconductor device, manufacturing method thereof, and organic semiconductor device |
| JP2007258218A (en) * | 2006-03-20 | 2007-10-04 | Toppan Printing Co Ltd | Organic transistor, and its manufacturing method |
| WO2009157531A1 (en) * | 2008-06-27 | 2009-12-30 | 株式会社日立製作所 | Semiconductor device, manufacturing method thereof, and display device using the semiconductor device |
-
2009
- 2009-10-19 JP JP2009239998A patent/JP5595004B2/en not_active Expired - Fee Related
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