JP2010121184A - Sputtering system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a sputtering system which can suitably and sufficiently improve the coverage properties of a sputtering deposited film. <P>SOLUTION: The sputtering system 100 includes: a vacuum film deposition chamber 30 where a substrate 70 and a target 35B are arranged; a plasma gun 40 guiding plasma 27 to a film deposition space 30A in the vacuum film deposition chamber 30 between the substrate 70 and the target 35B; a deflection electrode 60 arranged at the film deposition space 30A; a first power source 50 applying positive voltage to the deflection electrode 60; and a second power source 52 applying negative voltage to the target 35B. Then, based on such positive-negative voltage, the incidence direction to the target 35B of Ar<SP>+</SP>drifting from the plasma 27 to the target 35B is controlled. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a sputtering apparatus.

  With the miniaturization and speeding up of semiconductor device wiring, copper (Cu), which has a lower resistivity than aluminum, has attracted attention as a wiring material in the device. Formation of the Cu electrode wiring on the silicon substrate is usually performed by the following method by a combination of the sputtering technique and the electrolytic plating technique.

  FIG. 6 is a diagram schematically showing each process for an example of forming a Cu electrode wiring on a silicon substrate.

  First, as shown in FIG. 6A, a trench or hole for wiring is provided in a silicon oxide layer on a silicon substrate (not shown), and the trench or hole is made of tantalum (Ta) for preventing Cu diffusion. A barrier film (hereinafter abbreviated as “Ta barrier film”) is formed by sputtering.

  Then, as shown in FIG. 6B, a seed film made of Cu (hereinafter abbreviated as “Cu seed film”) serving as a base electrode film at the time of electrolytic plating so as to cover the Ta barrier film is sputtered. Formed by law.

  Next, as shown in FIG. 6C, the Cu electrode wiring is buried in the groove or hole by electrolytic plating so as to cover the Cu seed film.

  Finally, as shown in FIG. 6D, the Cu electrode wiring is planarized by an appropriate planarization method (for example, CMP).

  By the way, Patent Document 1 describes that a cylindrical plasma from a plasma gun is sandwiched between a pair of permanent magnets having N poles, thereby forming a high-density uniform sheet plasma in a large area. . Further, when such sheet plasma is induced between the target and the substrate, it is said that sheet plasma sputtering can be performed (see Patent Document 2).

Therefore, if the Ta barrier film and Cu seed film can be formed in the holes and grooves of the silicon substrate by applying the above-mentioned sheet plasma technology, the film formation area can be increased and the film formation efficiency can be improved in the semiconductor wiring process. Is convenient.
Japanese Patent Publication No. 4-23400 JP 2005-179767 A

  The inventors of the present invention are working on improving a sheet plasma type sputtering apparatus so that a high-coverage Cu seed film can be formed in fine holes and grooves. In this case, if the scattering direction of the sputtered particles can be appropriately controlled (specifically, the straightness of the sputtered particles in the center direction of the substrate can be improved), the coverage of the Cu seed film can be improved. thinking.

  In this regard, in a magnetron plasma type sputtering apparatus, a structure in which the direction of ionized sputtered particles can be controlled by an electric field has already been proposed as a method for improving the coverage of a sputtering deposited film (as a conventional example) JP-A-2001-192824).

  However, as in the conventional example, ionization of sputtered particles is a prerequisite for controlling the electric field of the sputtered particles. Therefore, in the structure of the conventional example, there is a problem that the coverage of the sputtering deposited film is governed by the rate of ionization of the sputtered particles.

  This invention is made | formed in view of such a situation, and it aims at providing the sputtering device which can improve the coverage property of a sputtering deposit film appropriately and fully.

  The inventors of the present invention have found that the problem of the above-described conventional example can be solved by deflecting the incident ions of the target instead of deflecting the sputtered particles by the electric field.

Therefore, the present invention has been devised for the first time based on such knowledge,
A vacuum film formation chamber in which a substrate and a target are arranged;
A plasma gun for inducing plasma into a film formation space of the vacuum film formation chamber between the substrate and the target;
A deflection electrode disposed in the deposition space;
A first power source for applying a positive voltage to the deflection electrode;
A second power source for applying a negative voltage to the target,
Provided is a sputtering apparatus in which the incident direction of positive ions drifting from the plasma to the target is controlled based on the positive and negative voltages.

  Here, in the present invention, the deflection electrode may be disposed between the plasma and the target.

  The cylindrical deflection electrode may surround the target in an annular shape along the periphery of the target in a plan view of the target. The target may be disposed inside the deflection electrode.

  With the above configuration, the present invention has various effects.

  For example, since the deflection electrode surrounds the target in an annular shape along the periphery of the target, the incident direction of positive ions to the target can be controlled uniformly throughout the entire periphery of the target. In addition, since the target is disposed inside the deflection electrode, when the above-described deflection electrode is incorporated into a sheet plasma type sputtering apparatus, the distance between the target and the sheet plasma can be adjusted.

  In the present invention, the positive ion drift may be deflected from the periphery of the target toward the center in the deflection electrode by an electric field generated by the positive and negative voltages.

  As a result, the center of the spatter distribution of sputtered particles when positive ions are incident on the target obliquely is in the direction of the center of the substrate with respect to the center of the spattered distribution of sputtered particles when the positive ions are vertically incident on the target It is considered offset.

  That is, when the spattering phenomenon of the sputtered particles is seen macroscopically in the entire target, the sputtered particle scattering distribution converges on the center of the substrate, so that the straightness of the sputtered particles in the center direction of the substrate is improved. As a result, the sputtered particles are incident on the high aspect ratio holes and grooves for substrate wiring with appropriate straightness, so that it is considered that the sputtered particles can efficiently reach the bottom surfaces of the holes and grooves.

  Therefore, improvement in the coverage of the sputtering deposited film can be expected on the walls of the holes and grooves. This has been verified by a sputter particle deposition experiment described later.

  The present invention may further comprise a pair of magnetic field generating means sandwiching the plasma and facing the same magnetic pole. The plasma may be spread in a sheet shape parallel to the target by a magnetic field generated by the pair of magnetic field generation means, and the sheet plasma may be induced in the film formation space.

  Thus, in the present invention, the deflection electrode is incorporated in the sheet plasma type sputtering apparatus.

  Thus, the sheet plasma and the target can be appropriately separated. This is advantageous because a sufficient distance can be secured to control the drift direction of positive ions (incident direction to the target) by the deflection electrode.

  ADVANTAGE OF THE INVENTION According to this invention, the sputtering device which can improve the coverage property of a sputtering deposit film appropriately and fully is obtained.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  FIG. 1 is a schematic view showing a configuration example of a sputtering apparatus according to an embodiment of the present invention.

  The sputtering apparatus 100 of this embodiment includes a plasma gun 40 that generates a high density of discharge plasma in order as viewed from the direction of discharge plasma transport, and a cylindrical nonmagnetic (for example, stainless steel) centering on the direction of plasma transport. A sheet plasma deformation chamber 20 (made of glass or glass) and a cylindrical non-magnetic (for example, stainless steel) vacuum film formation chamber 30 centering on a direction orthogonal to the direction of plasma transport.

  In addition, although detailed description is abbreviate | omitted here, these each part 40,20,30 is mutually connected by maintaining the airtight state via the channel | path which conveys plasma.

  First, the configuration of the plasma gun 40 and the configuration around the sheet plasma deformation chamber 20 will be outlined.

The plasma gun 40 of the sputtering apparatus 100 is a known pressure gradient gun, and includes a cathode unit 41 and intermediate electrodes G ₁ and G ₂ . The plasma gun 40 is also provided with discharge gas supply means (not shown) capable of guiding a discharge gas (here, argon gas) ionized by discharge to a discharge space in the plasma gun 40.

  With the above configuration, the above-described plasma gun 40 can generate a low voltage and high current arc discharge between the cathode unit 41 and the anode A (described later) using a plasma gun power source (not shown).

  In this manner, a cylindrical arc discharge plasma (hereinafter referred to as “cylindrical plasma 22”) having a substantially equal density distribution with respect to the discharge plasma transport center is formed in the discharge space of the plasma gun 40. Then, the cylindrical plasma 22 is drawn from the plasma gun 40 to the sheet plasma deformation chamber 20 as shown in FIG.

  In the sheet plasma deformation chamber 20, as shown in FIG. 1, a pair of square bar magnets 24 </ b> A and 24 </ b> B (permanent magnets; a pair of magnetic field generating means) sandwich the plasma transport space of the sheet plasma deformation chamber 20. They are arranged at regular intervals. In the present embodiment, the N poles of these bar magnets 24A and 24B are opposed to each other. Then, based on the interaction between the coil magnetic field created by the first electromagnetic coil 23 (air core coil) and the magnet magnetic field created by the bar magnets 24A, 24B, the cylindrical plasma 22 has a plane S including the transport center in its transport direction. It is deformed into a sheet-like plasma (hereinafter referred to as “sheet plasma 27”) that spreads along the surface. The sheet plasma 27 is guided from the sheet plasma deformation chamber 20 through the passage 28 to the film formation space 30 </ b> A of the vacuum film formation chamber 30.

  The above-described method of deforming the sheet plasma 27 using a magnetic field is already well known. Therefore, this detailed description is omitted here.

  Next, the configuration of the vacuum film forming chamber 30 will be described.

The vacuum film formation chamber 30 corresponds to a film formation chamber that releases the material of the target 35B (for example, copper) as sputtered particles by the collision energy of Ar ⁺ (argon positive ions) in the sheet plasma 27. As shown in FIG. 1, the vacuum film formation chamber 30 is grounded and has a film formation space 30A. The film formation space 30 </ b> A is evacuated by a vacuum pump 36 such as a turbo pump through an exhaust port that can be opened and closed by a valve 37. As a result, the deposition space 30A is quickly depressurized to a degree of vacuum that allows a sputtering process.

  In the present embodiment, the disk-shaped target 35B is moved up and down (vacuum film forming chamber 30) by the driving force of the elevating device 35A when mounted on a disk-shaped target holder (not shown). In the direction of the central axis). Thereby, a suitable distance between the target 35B and the sheet plasma 27 is set.

  Similarly, the disk-shaped substrate 70 is moved up and down (in the direction of the central axis of the vacuum film-forming chamber 30) in the film formation space 30A by the driving force of the elevating device 34A when mounted on the disk-shaped substrate holder 34B. I can move. Thereby, a suitable distance between the substrate 70 and the sheet plasma 27 is set.

  In this manner, the disk-shaped target 35B and the substrate 70 are arranged so as to face each other in a coaxial manner in the film formation space 30A with the sheet plasma 27 sandwiched therebetween at a certain suitable distance L in the thickness direction of the sheet plasma 27. Has been.

  In the present embodiment, a negative voltage (a negative voltage of about −1000 V) is applied to the target 35B by the DC bias power supply 52, as shown in FIG.

With such a negative voltage, Ar ⁺ in the sheet plasma 27 is attracted toward the target 35B, and Ar ⁺ collides with the target 35B. Then, sputtered particles (here, copper (Cu) particles) are emitted from the target 35 </ b> B toward the substrate 70 by the collision energy.

  Further, in the present embodiment, a cylindrical deflection electrode 60 (ion reflector) is disposed around the target 35B, and a bias voltage (positive voltage) is applied to the deflection electrode 60 by a DC bias power supply 50.

Thereby, in the process of drift of Ar ^{+ to} the target 35B, the locus of Ar ⁺ is bent as shown in FIG. 1 by the action (electric field) of the voltage applied to the deflection electrode 60. The configuration of the deflection electrode 60 will be described in detail later.

  Further, as shown in FIG. 1, high frequency (RF) power is applied to the substrate holder 34 </ b> B by a high frequency bias power source 51.

Thus, Cu particles (Cu ⁺ ) ionized by the action of the sheet plasma 27 when traversing the sheet plasma 27 can be appropriately drawn into the substrate 70 by RF power self-bias.

  Next, the configuration around the vacuum film forming chamber 30 will be described.

  An anode A is disposed on the side of the vacuum film forming chamber 30 opposite to the plasma gun 40, and a passage 29 for the sheet plasma 27 is provided between the side wall of the vacuum film forming chamber 30 and the anode A. Yes.

  The anode A is given a predetermined reference potential to the cathode unit 41 of the plasma gun 40. Thereby, the anode A has a role of collecting charged particles (particularly electrons) in the sheet plasma 27 based on the arc discharge between the cathode unit 41 and the anode A.

  Further, a permanent magnet 38 having an S pole on the anode A side and an N pole on the opposite side is disposed on the back surface of the anode A (the surface on the opposite side of the surface facing the cathode unit 41).

  The sheet plasma 27 has a width so as to suppress diffusion in the width direction (plasma spreading direction) of the sheet plasma 27 toward the anode A by the magnetic field lines along the main surface S that exits from the N pole of the permanent magnet 38 and enters the S pole. Converge in the direction. As a result, the charged particles of the sheet plasma 27 are properly collected by the anode A.

  Further, as shown in FIG. 1, the second electromagnetic coil 32 and the third electromagnetic coil 33 (both are air-core coils) are paired with each other and sandwich the film formation space 30A of the vacuum film formation chamber 30 so as to have different polarities. The two electromagnetic coils 32 are arranged facing each other (here, the second electromagnetic coil 32 is an N pole and the third electromagnetic coil 33 is an S pole). The second electromagnetic coil 32 is disposed at an appropriate position in the plasma transport direction between the bar magnets 24A and 24B and the vacuum film formation chamber 30, and the third electromagnetic coil 33 is disposed between the vacuum film formation chamber 30 and the anode 15. It is placed at the right place in the direction of plasma transport.

  By the coil magnetic field (for example, about 10G to 300G) formed by the pair of the first and second electromagnetic coils 32 and 33, the sheet plasma 27 is shaped so as to appropriately suppress the diffusion in the plasma spreading direction.

  Next, the configuration of the deflection electrode 60 that is a feature of the embodiment of the present invention will be described with reference to the drawings.

  FIG. 2 is a perspective view showing one configuration example of the deflection electrode used in the sputtering apparatus according to the embodiment of the present invention.

FIG. 3 is a diagram schematically showing how Ar ⁺ is deflected by the deflection electrode of FIG. 1 and how sputtered particles are scattered.

  The inside of the vacuum film forming chamber 30 of the sputtering apparatus 100 has a symmetric structure with the central axis 200 of the deflection electrode 60 as the center. Therefore, in FIG. 3, only the inner half of the vacuum film forming chamber 30 is shown. Further, from the viewpoint of simplifying the drawing, some of the components (for example, the lifting devices 34A and 35A) in the vacuum film forming chamber 30 are not shown.

  As shown in FIGS. 2 and 3, the deflection electrode 60 is a metal cylindrical body arranged coaxially with the target 35 </ b> B with the direction orthogonal to the disk-shaped target 35 </ b> B as the central axis 200. When the target 35B is viewed in plan, the deflection electrode 60 (cylindrical body) and the target 35B have similar shapes, and the inner dimension of the deflection electrode 60 (cylindrical body) is the outer dimension of the target 35B. It is slightly larger than. That is, when the target 35B is viewed in plan, the deflection electrode 60 surrounds the periphery of the target 35B in an annular shape along the periphery of the target 35B.

  Furthermore, as shown in FIGS. 1 and 3, in this embodiment, the target 35 </ b> B is included in the deflection electrode 60. As a result, the target 35B can move up and down (in the direction of the central axis of the vacuum film formation chamber 30) in the film formation space 30A by the driving force of the lifting device 35A as described above.

Here, the present inventors considered that the direction of Ar ⁺ drift can be appropriately controlled by applying appropriate voltages to the deflection electrode 60 and the target 35B. As a result of the control of the Ar ⁺ drift direction, it was considered that the linearity of the Cu particles was improved as described later.

FIG. 4 is a diagram showing the results of electrostatic field simulation used to explain the deflection of Ar ⁺ by the deflection electrode of FIG.

  In FIG. 4, electric field lines (arrows), equipotential lines (solid lines), and electric potential distribution (gray scale) representing the state of the electric field generated by the target 35 </ b> B and the deflection electrode 60 are illustrated.

  In performing such an electrostatic field simulation, an analysis model having substantially the same shape as the shape of the target 35B and the deflection electrode 60 shown in FIG. 3 is generated on a computer by a divided unit analysis region (mesh region) for numerical calculation. Has been. Then, “−1000 V” voltage data is input to the mesh region corresponding to the target 35 </ b> B, and “+50 V” voltage data is input to the mesh region corresponding to the deflection electrode 60.

However, the main focus of this simulation is to confirm the Ar ⁺ deflection effect by the target 35B and the deflection electrode 60. Therefore, the model is simplified within such a range that does not affect the confirmation. For example, in this electrostatic field simulation, modeling of the floating potential (positive potential) of the sheet plasma 27 itself is omitted. Therefore, the analysis result in the region near the sheet plasma far from the target 35B is not necessarily consistent with the actual electric field distribution.

  The electrostatic field simulation uses general-purpose electromagnetic field analysis software, but description of the analysis software is omitted.

  As shown in FIG. 4, in the vicinity of the periphery of the target 35B, an electric field E directed from the deflection electrode 60 to the target 35B is formed based on the negative voltage of the target 35B and the positive voltage of the deflection electrode 60.

Due to the action of the electric field E, Ar ⁺ drifting in the deflection electrode 60 from the sheet plasma 27 toward the target 35B in the peripheral portion of the target 35B is deflected toward the center of the target 35B as shown in FIG. . Thus, Ar ⁺ is considered to be incident obliquely so as to converge toward the center of the target 35B (hereinafter, such Ar ⁺ incidence may be abbreviated as "Ar ⁺ oblique incident".). In this case, the ratio of Cu particles emitted by the impact energy of the Ar ⁺ is to the incident direction of the Ar ⁺ target 35B opposite, if there is the main component in the direction of the center side of the substrate 70, It is predicted to have a constant angle component around this direction (see the two-dot chain line in FIG. 3).

On the other hand, at the center of the target 35B, Ar ⁺ drifting in the direction of the target plasma 35B from the sheet plasma 27 in the deflection electrode 60 is considered to be perpendicularly incident on the target 35B as shown in FIG. such Ar ⁺ incidence may be abbreviated as "Ar ⁺ normal incidence."). In this case, the ratio of Cu particles emitted by the impact energy of the Ar ⁺ is opposite to the incident direction of the Ar ^+, exist mainly composed in the direction perpendicular to the substrate 70, around this direction It is predicted to have a constant angular distribution (see dotted line in FIG. 3).

As described above, it is considered that the center of the Cu particle scattering distribution at the Ar ⁺ oblique incidence is offset toward the center of the substrate 70 with respect to the center of the Cu particle scattering distribution at the Ar ⁺ perpendicular incidence.

  That is, when such a scattering phenomenon of Cu particles is viewed macroscopically in the entire target 35B, since the scattering distribution of the Cu particles converges on the center of the substrate 70, the straightness of the Cu particles in the center direction of the substrate 70 is improved. To do. As a result, since Cu particles enter the holes and grooves for high-aspect-ratio Cu wiring (hereinafter abbreviated as “holes 71”) with appropriate straightness, the Cu particles reach the bottom surfaces of the holes 71 and the like. It is thought that it can be reached efficiently.

  Therefore, improvement in the coverage of the Cu deposit film 72 (sputtering deposit film) can be expected on the wall surface of the hole 71 or the like. This has been verified by a Cu particle deposition experiment described below.

  The Cu particle deposition experiment of this example was performed for the purpose of verifying the improvement in coverage of the Cu deposited film 72 by the deflection electrode 60.

  FIG. 5 is a view showing cross-sectional photographs of Cu particle deposition experiment results in holes or the like of a silicon substrate when a positive voltage is applied to the deflection electrode and when no voltage is applied.

  FIG. 5A shows a photograph of the Cu deposited film 72 when a voltage of “+50 V” is applied to the deflection electrode 60. FIG. 5B shows a photograph of the Cu deposited film 72 ′ when no voltage is applied to the deflection electrode 60.

  In this deposition experiment, various film formation parameters (for example, the degree of vacuum, the film formation time, and the discharge current of the plasma gun 40) other than the voltage application to the deflection electrode 60 are the same between the two. Further, the positional relationship between the deflection electrode 60 and the target 35B in this deposition experiment is substantially the same as that described in the embodiment. Therefore, the description of the arrangement relationship is omitted. Further, in this deposition experiment, a voltage of about −1000 V is applied to the target 35B.

  First, as shown in FIG. 5, the top film thicknesses L1 and L2 of the Cu deposition film 72 on the main surface of the silicon substrate (portion other than holes etc. 71) when a voltage of “+50 V” is applied to the deflection electrode 60 are as follows. It can be seen that the top film thicknesses L1 ′ and L2 ′ of the Cu deposition film 72 ′ when no voltage is applied to the deflection electrode 60 are substantially the same.

  Under such circumstances, various film thickness data (side film thicknesses L3, L4, L6, L7 and bottom film thickness) related to the coverage of the Cu deposited film 72 in the holes 71 (depth L10, inlet opening diameter L5). L8 etc.) were examined.

  As can be easily visually evaluated from the photograph of FIG. 5, the Cu deposited film 72 when the voltage of “+50 V” is applied to the deflection electrode 60 is the Cu deposited film 72 ′ when the voltage is not applied to the deflection electrode 60. It can be seen that the coverage is improved as compared with.

  For example, when a voltage of “+50 V” is applied to the deflection electrode 60 near the center of the silicon substrate, the film thickness ratio “bottom film thickness L8” of the Cu deposited film 72 as an index indicating the coverage of the Cu deposited film 72 / Top film thickness L1 (or top film thickness L2) "is about 60%, but when the deflection electrode 60 is not applied, the film thickness ratio of the Cu deposited film 72 'is" bottom film thickness L8' / The top film thickness L1 ′ (or the top film thickness L2 ′) ”was about 40%.

  As described above, the sputtering apparatus 100 of this embodiment includes the vacuum film formation chamber 30 in which the substrate 70 and the target 35B are disposed, and the film formation space 30A in the vacuum film formation chamber 30 between the substrate 70 and the target 35B. A plasma gun 40 for inducing the sheet plasma 27, a cylindrical deflection electrode 60 disposed in a film forming space 30A between the sheet plasma 27 and the target 35B, and a DC bias power source for applying a positive voltage to the deflection electrode 60 50 and a DC bias power source 52 for applying a negative voltage to the target 35B.

Based on such positive and negative voltages, the incident direction of Ar ⁺ drifting from the sheet plasma 27 to the target 35B to the target 35B is controlled. Specifically, the Ar ⁺ drift is deflected in the deflection electrode 60 from the periphery of the target 35B toward the center by the electric field generated by the positive and negative voltages.

In the present embodiment, the deflection electrode 60 surrounds the target 35B in an annular shape along the periphery of the target 35B in a plan view of the target 35B, whereby the Ar ⁺ drift direction (to the target 35B toward the target 35B) (Incident direction) can be uniformly controlled over the entire circumference of the target 35B.

  Furthermore, in this embodiment, since the target 35B is disposed inside the deflection electrode 60, the distance between the target 35B and the sheet plasma 27 can be easily adjusted using the lifting device 35A.

With the above configuration, it is considered that the center of the Cu particle scattering distribution at Ar ⁺ oblique incidence is offset toward the center of the substrate 70 with respect to the center of the Cu particle scattering distribution at Ar ⁺ normal incidence.

  That is, when the scattering phenomenon of Cu particles is viewed macroscopically in the entire target 35 </ b> B, since the scattering distribution of Cu particles converges on the center of the substrate 70, the straightness of the Cu particles in the center direction of the substrate 70 is improved. As a result, the Cu particles enter the holes 71 for Cu wiring having a high aspect ratio with appropriate straightness, so that it is considered that the Cu particles can efficiently reach the bottom surfaces of the holes 71.

  Therefore, the improvement of the coverage of the Cu deposition film 72 (sputtering deposition film) on the wall surface of the hole 71 or the like can be expected. This has been verified in the Cu particle deposition experiment described above.

In this way, the sputtering apparatus 100 of the present embodiment applies a deflection action by the electric field to Ar ⁺ that is the incident ions of the target 35B.

  Therefore, in the sputtering apparatus 100 of this embodiment, the problem of the conventional example that the coverage property of the sputtering deposited film is governed by the ionization ratio of the sputtered particles can be fundamentally solved.

  Further, in the present embodiment, the deflection electrode 60 is incorporated in the sheet plasma type sputtering apparatus 100, whereby the sputtering apparatus 100 of the present embodiment has various effects.

For example, the sheet plasma 27 and the target 35B can be appropriately separated. This is advantageous because a sufficient space (distance) in which the deflection direction of the Ar ⁺ drift direction (incident direction to the target 35B) can be controlled by the deflection electrode 60 can be secured.

Moreover, the use of such a sheet plasma 27, the distance between the sheet plasma 27 and the target 35B is, since constant over substantially the entire target 35B, due to the deflection electrodes 60 Ar ⁺ in the drift direction (target 35B (Incident direction) can be controlled uniformly over the entire area of the target 35B.

  However, the technique of the present specification has various effects as described above in combination with the sheet plasma type sputtering method, but is not necessarily limited to the use of the sheet plasma type sputtering apparatus. For example, the present technology can be applied to a sputtering method using columnar plasma or an ion beam sputtering (IBS) method.

  ADVANTAGE OF THE INVENTION According to this invention, the sputtering device which can improve the coverage property of a sputtering deposit film appropriately and fully is obtained.

  Therefore, the present invention can be used as, for example, a sheet plasma type sputtering apparatus.

It is the schematic which showed one structural example of the sputtering device by embodiment of this invention. It is the perspective view which showed one structural example of the deflection | deviation electrode used for the sputtering device by embodiment of this invention. It is the figure which showed typically the mode of deflection | deviation of Ar ^<+> by the deflection | deviation electrode of FIG. 1, and the mode of scattering of sputtered particles. It is the figure which showed the result of the electrostatic field simulation used for description of the deflection | deviation of Ar ^<+> by the deflection | deviation electrode of FIG. It is the figure which posted the cross-sectional photograph of the deposition experiment result of Cu particle | grains to the hole etc. of a silicon substrate in the case where a positive voltage is applied to a deflection electrode, and the case where a voltage is not applied. In (a), a photograph of a Cu deposited film when a voltage of “+50 V” is applied to the deflection electrode is shown. In (b), a photograph of a Cu deposited film when no voltage is applied to the deflection electrode is shown. It is the figure which showed each process typically about an example of Cu electrode wiring formation to a silicon substrate.

Explanation of symbols

20 Sheet plasma deformation chamber 22 Cylindrical plasma 23 First electromagnetic coils 24A, 24B Bar magnet 36 Vacuum pump 37 Valve 27 Sheet plasma 28, 29 Passage 30 Vacuum film formation chamber 30A Film formation space 32 Second electromagnetic coil 33 Third electromagnetic coil 34B Substrate holders 34A, 35A Lifting device 35B Target (Cu target)
38 Permanent magnet 40 Plasma gun 41 Cathode unit 50, 52 DC bias power supply 51 High frequency bias power supply 60 Deflection electrode 70 Substrate 71 Hole etc. 72 Cu deposition film (sputtering deposition film)
100 Sputtering apparatus 200 Center axis A of deflection electrode Anode G ₁ , G ₂ Intermediate electrode S Main surface

Claims (6)

A vacuum film formation chamber in which a substrate and a target are arranged;
A plasma gun for inducing plasma into a film formation space of the vacuum film formation chamber between the substrate and the target;
A deflection electrode disposed in the deposition space;
A first power source for applying a positive voltage to the deflection electrode;
A second power source for applying a negative voltage to the target,
A sputtering apparatus in which an incident direction of positive ions drifting from the plasma to the target is controlled based on the positive and negative voltages.   The sputtering apparatus according to claim 1, wherein the deflection electrode is disposed between the plasma and the target.   The sputtering apparatus according to claim 2, wherein the cylindrical deflection electrode surrounds the target in an annular shape along the periphery of the target in a plan view of the target.   The sputtering apparatus according to claim 3, wherein the target is disposed inside the deflection electrode.   The sputtering apparatus according to claim 1, wherein the drift of the positive ions is deflected from the periphery of the target toward the center in the deflection electrode by an electric field generated by the positive and negative voltages. Further comprising a pair of magnetic field generating means sandwiching the plasma and facing the same magnetic pole,
6. The plasma according to claim 1, wherein the plasma spreads in a sheet shape parallel to the target by a magnetic field generated by the pair of magnetic field generating means, and the sheet-shaped plasma is induced in the film formation space. Sputtering equipment.