JP2010100507A5 - - Google Patents

Claims (8)

A growth step of growing a silicon single crystal ingot containing no COP and dislocation clusters by the Czochralski method;
Cutting out a silicon wafer from the silicon single crystal ingot,
an etching step of revealing grown-in defects including silicon oxide as protrusions on the etched surface by performing reactive ion etching on the silicon wafer in the as-grown state,
A method for producing a silicon single crystal, comprising adjusting a growth condition in a subsequent growth step based on a region where the protrusion is manifested in the etching step.   2. The method for producing a silicon single crystal according to claim 1, wherein whether or not the silicon single crystal ingot is accepted is determined based on a region where the protrusion is manifested in the etching step.   3. The method for producing a silicon single crystal according to claim 1, wherein in the growing step, a silicon single crystal ingot that does not include an OSF nucleus is grown. The method for producing a silicon single crystal according to any one of claims 1 to 3, wherein a region where the protrusions manifested in the etching step are formed into a disk shape and / or a ring shape. Wherein in the etching step, etching the silicon wafer with an aqueous solution containing hydrofluoric acid and nitric acid, according to any one of claims 1 to 4, characterized by applying the reactive ion etching to etched surface A method for producing a silicon single crystal. 5. The method for producing a silicon single crystal according to claim 1 , wherein in the etching step, the silicon wafer is cleaved, and the reactive ion etching is performed on a cleaved surface. 6. 5. The silicon single crystal production according to claim 1 , wherein, in the etching step, the silicon wafer is mirror-finished, and the reactive ion etching is performed on the mirror-finished surface. 6. Method. A silicon wafer that is cut from a silicon single crystal ingot grown by the Czochralski method and does not contain any of COP, OSF nucleus and dislocation cluster,
When a grown-in defect containing silicon oxide is made visible as a protrusion on the etching surface by performing reactive ion etching in an as-grown state, the area where the protrusion is exposed is disc-like and / or A silicon wafer characterized by a ring shape.