JP2010093622A - High frequency circuit component and communication device using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a structure effective to a size reduction and a high integration in a high frequency circuit component including: a plurality of sending routes having an amplifier for one communication system; and/or a plurality of receiving routes having the amplifier for the one communication system, and a communication device using the same. <P>SOLUTION: In the high frequency circuit component having a plurality of sending terminals and/or a plurality of receiving terminals for the one communication system, of ground electrodes formed inside a multilayer dielectric substrate, the ground electrode corresponding to an output circuit of the amplifier disposed in one route of a plurality of routes formed in relation to the terminal is isolated from the ground electrode corresponding to an input circuit of the amplifier disposed in the other routes for formation. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a communication device that performs wireless transmission between electronic and electrical devices, and a high-frequency circuit component that is used in the communication device. The present invention relates to a high-frequency circuit component having a reception terminal and / or a transmission terminal.

  In recent years, development of communication devices that perform wireless transmission between electronic and electrical devices, such as mobile phones, wireless LAN communications, and short-range wireless standards Bluetooth (registered trademark), has not stopped. These communication devices are becoming more complex and multifunctional, and various developments and commercializations are progressing, such as multi-band compatible products that combine multiple communication systems into one, and communication system products with large transmission volumes. Yes.

  Among them, a wireless communication system using a multiple input multiple output (MIMO) system is attracting attention. This MIMO communication system uses multiple transmit antennas and multiple receive antennas to spatially multiplex multiple signals at the same frequency, thereby improving transmission capacity and frequency utilization efficiency without expanding the frequency bandwidth used. This is expected to improve. In principle, a transmission rate of N times can be obtained by N pairs of transmitting and receiving antennas.

  An invention relating to a high-frequency circuit device and a high-frequency module related to a MIMO communication system is disclosed in Patent Document 1, for example. An example is shown in FIG. The high frequency module 89 is formed using a resin substrate 87. Discrete components such as transmission power amplifiers 1 and 2, reception low noise amplifiers (low noise amplifiers) 88 a and 88 b, and bandpass filters 16 a and 16 b are mounted on the resin substrate 87 together with other components. In the MIMO communication system, two or more power amplifiers 1 and 2 are used for a transmission path, and low noise amplifiers 88a and 88b are used for a reception path. In the MIMO front-end module, a plurality of power amplifiers 1 and 2 operate simultaneously during transmission, and a plurality of low noise amplifiers 88a and 88b operate simultaneously during reception.

  In the high frequency module of Patent Document 1, the resin substrate 87 is used, but a ceramic laminate in which a plurality of dielectric sheets are laminated may be used. In this case, it is possible to integrate passive components such as a band-pass filter by forming a conductive pattern in the ceramic laminate.

JP 2006-295282 A

  In a MIMO communication system, high-speed and stable communication is realized by separating and processing signals between a plurality of transmission paths and reception paths during transmission and reception. Therefore, in a high-frequency module of a MIMO communication system, it is necessary to ensure sufficient isolation between these multiple transmission paths and reception paths.

  The high-frequency module 89 shown in FIG. 10 fully satisfies the requirements of the MIMO communication system. However, the technological advancement is increasing day by day, and the transmission path and the reception path are requested by the demand for downsizing and high integration of the high-frequency module. There has also been a situation in which it is necessary to mount them side by side. When distances between a plurality of transmission paths and reception paths are close to each other, isolation between transmission paths and reception paths tends to deteriorate. In the case of the ceramic laminate described above, there is interference between the electrode patterns inside the ceramic laminate. Therefore, in order to ensure isolation between the routes, between each electrode pattern for the route formed inside the ceramic laminate. In many cases, a method of forming a ground electrode or a through hole connected to the ground electrode as a partition is used. However, in recent years, due to the demand for miniaturization and high integration of high-frequency modules, it has become even difficult to obtain a place where these partitioning ground patterns and through holes are formed inside the ceramic laminate.

  When the ground pattern or through-hole partition is not formed inside the ceramic laminate, the interference between the electrode patterns of each path increases, which causes deterioration of isolation between transmission paths and reception paths. In addition, when the number of ground through holes is small, a parasitic inductance component is generated in the ground electrode formed inside the ceramic laminate, and it cannot be a good ground electrode. It contributes to the deterioration of isolation.

  The isolation between transmission paths and reception paths will be described with reference to FIG. The amplifier in the figure is a power amplifier or a low noise amplifier. The isolation between paths is the input side of one amplifier and the input side of the other amplifier (a in FIG. 9), the output side of one amplifier and the output side of the other amplifier (b in FIG. 9), one amplifier It is necessary to consider the three types of the output side of the other amplifier and the input side of the other amplifier (c in FIG. 9). If any one of these a, b, and c deteriorates, the isolation between paths deteriorates. Particularly, when the isolation of c is insufficient, a part of the output signal leaking from the output of one amplifier is transmitted to the other amplifier. Amplified and output, which greatly affects the isolation between paths. Therefore, it is important to ensure the isolation of c.

  In view of the above-described problems, the present invention provides a high-frequency circuit component having a plurality of transmission paths having amplifiers for one communication system and / or a plurality of reception paths having amplifiers for one communication system. Another object of the present invention is to provide a configuration effective for miniaturization and high integration in a communication apparatus using the same.

  The high-frequency circuit component of the present invention includes a dielectric substrate formed by laminating a plurality of dielectric layers, a plurality of antenna terminals formed on the dielectric substrate, and the plurality of antenna terminals for one communication system. A high-frequency circuit component having a plurality of transmission terminals and / or a plurality of reception terminals that can be separately connected to each of the transmission paths, and / or for each transmission path between the plurality of antenna terminals and the plurality of transmission terminals An amplifier that amplifies a high-frequency signal is provided for each reception path between the plurality of antenna terminals and the plurality of reception terminals, and the relationship between the amplifiers that are provided for each transmission path and make a pair, and / or In the relationship between the amplifiers provided for each receiving path and making a pair, the inner layer of the dielectric substrate has a graph provided in the dielectric layer corresponding to the input side circuit of one amplifier of the pair. One internal ground conductor layer composed of a ground electrode formed in a dielectric electrode and / or a dielectric layer immediately below the one amplifier, and the dielectric layer corresponding to the output side circuit of the other amplifier of the pair Each of the internal ground conductor layers and the other internal ground conductor layer made of a ground electrode formed on the dielectric layer directly below the other amplifier, Are connected to a common ground conductor layer formed between the internal ground conductor layers and the mounting surface of the dielectric substrate. With this structure, the signal output from the other amplifier of the same communication system is prevented from leaking to the input side of one amplifier via the ground electrode including the parasitic inductance, and one amplifier is arranged. It is possible to ensure isolation between the signal path and the signal path where the other amplifier is arranged.

  In the high-frequency circuit component, the first and second antenna terminals as the plurality of antenna terminals, the first and second reception terminals for the first communication system as the plurality of reception terminals, and the first communication system. A first transmission terminal for the first communication system, the first transmission terminal for the first communication system is connectable to the first antenna terminal, and the first reception terminal for the first communication system is the first transmission terminal The second receiving terminal for the first communication system is configured to be connectable to the second antenna terminal so as to be connectable to the first antenna terminal, and the first receiving terminal for the first communication system and the second receiving terminal The one amplifier is provided in the reception path between the first antenna terminal and the other amplifier in the reception path between the second reception terminal for the first communication system and the second antenna terminal. Is provided A circuit between one antenna terminal and the one amplifier is the input side circuit, and a circuit between the other amplifier and the second reception terminal for the first communication system is the output side circuit. Preferably there is. With this structure, in a high-frequency circuit component that has two or more reception paths for one communication system, and an amplifier is arranged in each reception path, the high-frequency circuit component is kept small, and the reception path is excellent. Isolation is possible.

  The high-frequency circuit component further includes a first transmission terminal for a second communication system, and a plurality of first and second reception terminals for a second communication system as the plurality of reception terminals. A first transmission terminal for a communication system can be connected to the first antenna terminal, and a first reception terminal for the second communication system can be connected to the first antenna terminal. The second receiving terminal is configured to be connectable to the second antenna terminal, and the one receiving path between the first receiving terminal for the second communication system and the first antenna terminal An amplifier is further provided, and the other amplifier is further provided in a reception path between the second reception terminal for the second communication system and the second antenna terminal, and the first antenna terminal and the one are With amplifier The circuit is that the input-side circuit, it is preferable circuit between the second receiving terminal for the other amplifier and the second communication system is the output-side circuit. By applying the above configuration to multi-band high-frequency circuit components that handle different communication systems, in complex multi-band high-frequency circuit components, good isolation between reception paths is achieved while maintaining the small size of high-frequency circuit components. It becomes possible to do.

  Further, in the high-frequency circuit component, first and second antenna terminals as the plurality of antenna terminals, first and second reception terminals for a first communication system as the plurality of reception terminals, and the plurality of transmissions The first communication system has first and second transmission terminals for the first communication system as terminals, and the first reception terminal for the first communication system is connectable to the first antenna terminal. A second receiving terminal for the first communication system can be connected to the second antenna terminal, a first transmission terminal for the first communication system can be connected to the first antenna terminal, The second transmission terminal is configured to be connectable to the second antenna terminal, the reception path between the first reception terminal for the first communication system and the first antenna terminal, and / or the first antenna terminal. 1 communication system The first amplifier is provided in the transmission path between the first transmission terminal for the communication system and the first antenna terminal, and the second reception terminal and the second antenna terminal for the first communication system And / or a transmission path between the second transmission terminal for the first communication system and the second antenna terminal, the other amplifier is provided, and the first antenna A circuit between a terminal and the one amplifier of the reception path and / or a circuit between a first transmission terminal for the first communication system and the one amplifier is the input side circuit, and The circuit between the other amplifier in the reception path and the second reception terminal for the first communication system and / or the circuit between the other amplifier in the transmission path and the second antenna terminal is the output. A side circuit is preferred. With such a structure, in a high-frequency circuit component having two or more reception paths and two or more transmission paths for one communication system, the high-frequency circuit parts are kept small, and between the reception paths and / or between the transmission paths. It is possible to achieve good isolation.

  Furthermore, in the high-frequency circuit component, the first and second transmission terminals for the second communication system as the plurality of transmission terminals, and the first and second transmission terminals for the second communication system as the plurality of reception terminals. A first transmission terminal for the second communication system is connectable to the first antenna terminal, and a second transmission terminal for the second communication system is the second antenna terminal. The first receiving terminal for the second communication system is connectable to the first antenna terminal, and the second receiving terminal for the second communication system is connected to the second antenna terminal. A reception path between the first reception terminal for the second communication system and the first antenna terminal, and / or the first transmission terminal for the second communication system and the first Antenna terminal The one amplifier is further provided in a transmission path between the second reception terminal for the second communication system and the second antenna terminal, and / or the second communication system. The other amplifier is further provided in the transmission path between the second transmission terminal and the second antenna terminal for use between the first antenna terminal and the one amplifier in the reception path. A circuit and / or a circuit between the first transmission terminal for the second communication system and the one amplifier is the input side circuit, and the other amplifier of the reception path and the circuit for the second communication system It is preferable that a circuit between the second receiving terminal and / or a circuit between the other amplifier of the transmission path and the second antenna terminal is the output side circuit. By applying the above configuration to a multiband high-frequency circuit component that handles different communication systems, in a complex multiband high-frequency circuit component, while maintaining the small size of the high-frequency circuit component, between reception paths and / or between transmission paths Good isolation can be realized.

  In the high-frequency circuit component, the first and second antenna terminals as the plurality of antenna terminals, the first and second transmission terminals for the first communication system as the plurality of transmission terminals, and the first communication system. The first receiving terminal for the first communication system is connectable to the first antenna terminal, and the first transmitting terminal for the first communication system is the first receiving terminal. The second transmission terminal for the first communication system is connectable to the second antenna terminal so that it can be connected to the first antenna terminal, and the first transmission terminal for the first communication system and the second transmission terminal The one amplifier is provided in the transmission path between the first antenna terminal and the other amplifier in the transmission path between the second transmission terminal for the first communication system and the second antenna terminal. Is provided A circuit between a first transmission terminal for one communication system and the first amplifier is the input side circuit, and a circuit between the other amplifier and the first antenna terminal is the output side. A circuit is preferred. With this structure, in a high-frequency circuit component that has two or more transmission paths for one communication system, and an amplifier is arranged in each transmission path, the high-frequency circuit parts are kept small, and the transmission path is excellent. Isolation is possible.

  The high-frequency circuit component further includes a first reception terminal for a second communication system, and a first transmission terminal and a second transmission terminal for a second communication system as the plurality of transmission terminals. A first receiving terminal for a communication system is connectable to the first antenna terminal, and a first transmitting terminal for the second communication system is connectable to the first antenna terminal, the second communication system The second transmission terminal is configured to be connectable to the second antenna terminal, and the second transmission terminal is connected to the one transmission path between the first transmission terminal for the second communication system and the first antenna terminal. An amplifier is further provided, and the other amplifier is further provided in a transmission path between the second transmission terminal for the second communication system and the second antenna terminal, and the first amplifier for the second communication system is provided. The transmission terminal and the Square a circuit is the input circuit between the amplifiers, it is preferable that the a circuit is the output-side circuit between the other amplifier and the second antenna terminal. By applying the above configuration to multiband high-frequency circuit components that handle different communication systems, it is possible to achieve good isolation between transmission paths while maintaining the small size of high-frequency circuit components in complex multiband high-frequency circuit components. It can be realized.

  Further, in the high-frequency circuit component having the first and second receiving terminals for the first communication system and the first and second transmitting terminals, the mounting surface of the dielectric substrate is used for the first communication system. A first reception terminal for the first communication system is disposed between a first transmission terminal and a second transmission terminal for the first communication system, and the first reception terminal for the first communication system and It is preferable that a second transmission terminal for the first communication system is disposed between the second reception terminal for the first communication system. With this configuration, the transmission paths and the reception paths are not directly adjacent to each other in the high-frequency circuit component, so that the isolation between the transmission paths and the isolation between the reception paths can be further improved.

  Also, first and second reception terminals for the first communication system, first and second transmission terminals, first and second reception terminals for the second communication system, and first and second In the high-frequency circuit component having a transmission terminal, on the mounting surface of the dielectric substrate, between the first transmission terminal for the first communication system and the first reception terminal for the first communication system. A first transmission terminal for two communication systems, and a first transmission terminal for the first communication system between a first transmission terminal for the second communication system and a first reception terminal for the second communication system. A second transmission terminal for the second communication system is disposed between the second transmission terminal for the first communication system and the second reception terminal for the first communication system. And a second transmission terminal for the second communication system The second receiving terminal for the first communication system are preferably arranged between the second second receiving terminal for a communication system. Even in such a configuration, since the reception path is arranged between the transmission paths and the transmission path is arranged between the reception paths, it is possible to realize a multiband high-frequency circuit component having good isolation between transmission paths and isolation between reception paths. Is possible. Further, in this configuration, since the transmission path and the reception path of the same communication system are not directly adjacent to each other, a part of the output signal of the transmission path amplifier passes through the reception circuit to the input circuit of the transmission path amplifier. Therefore, it is possible to reduce the risk of oscillation of the transmission path amplifier.

  The communication device of the present invention is characterized by using any one of the high-frequency circuit components.

  According to the present invention, a high-frequency circuit component having a plurality of transmission paths having an amplifier for one communication system and / or a plurality of reception paths having an amplifier for one communication system, and communication using the same In the apparatus, it is possible to provide a configuration effective for miniaturization and high integration.

  The high-frequency circuit component according to the present invention is a high-frequency circuit component for the MIMO system. In the present invention, the MIMO is used as a concept including SIMO (Single-Input, Multiple-Output) and MISO (Multiple-Input, Single-Output). The MIMO system requires a plurality of reception terminals that can output reception signals simultaneously and / or a plurality of transmission terminals that can simultaneously input transmission signals independently for one communication system. Such a high-frequency circuit component includes, for example, a wireless LAN front-end module for switching between an antenna terminal and a transmission terminal or a reception terminal of a wireless LAN using a 2.4 GHz band or a 5 GHz band, and a dual using the above two bands. There are a front-end module for a band wireless LAN, a front-end module for WiMAX, a composite module combining a wireless LAN and WiMAX, and the like.

  The high-frequency circuit component according to the present invention includes a dielectric substrate formed by laminating a plurality of dielectric layers, a plurality of antenna terminals formed on the dielectric substrate, and the plurality of antennas for one communication system. Each of the terminals has a plurality of transmission terminals and / or a plurality of reception terminals that can be connected separately. An amplifier for amplifying a high-frequency signal is provided for each transmission path between the plurality of antenna terminals and the plurality of transmission terminals and / or for each reception path between the plurality of antenna terminals and the plurality of reception terminals. It is done. The relationship between the amplifiers provided for each transmission path and a pair thereof and / or the relationship between the amplifiers provided for each of the reception paths and a pair includes the following. That is, on the inner layer of the dielectric substrate, a ground electrode provided on the dielectric layer corresponding to an input side circuit of one amplifier of the pair and / or a dielectric layer immediately below the one amplifier is provided. One internal ground conductor layer formed of the formed ground electrode, and a ground electrode provided in the dielectric layer corresponding to the output side circuit of the other amplifier of the pair and / or immediately below the other amplifier The other internal ground conductor layer made of the ground electrode formed on the dielectric layer is provided separately from each other. Further, each internal ground conductor layer is connected to a common ground conductor layer formed between each internal ground conductor layer and the mounting surface of the dielectric substrate. Such embodiment of this invention is described using drawing. However, the present invention is not limited to the following embodiment.

  FIG. 1 is a circuit block diagram of a high-frequency circuit component according to an embodiment of the present invention. FIG. 1 is an example of a 2T2R (2 transmission system 2 reception system) dual-band wireless LAN high-frequency module using a 2.4 GHz band as a first communication system and a 5 GHz band as a second communication system. The communication system according to the present invention is not limited to the wireless LAN, and may be applied to other communication systems other than the wireless LAN as described above. In addition, the configuration according to the present invention can be applied to a configuration in which the number of transmission systems and / or reception systems is further increased as compared with 2T2R. Further, the embodiment of FIG. 1 has a configuration in which a power amplifier is arranged in the transmission path as an amplifier and no amplifier is arranged in the reception path. However, an amplifier for amplifying a high-frequency signal is provided for each transmission path between the plurality of antenna terminals and the plurality of transmission terminals and / or for each reception path between the plurality of antenna terminals and the plurality of reception terminals. Therefore, it is possible to use a configuration in which a low noise amplifier is arranged in the reception path as an amplifier and no amplifier is arranged in the transmission path, or a configuration in which a low noise amplifier is arranged in the reception path and a power amplifier is arranged in the transmission path. Needless to say. The configuration of separating the ground electrode provided corresponding to the input side circuit of one amplifier and the ground electrode provided corresponding to the output side circuit of the other amplifier is provided for each transmission path. In the relationship between the power amplifiers that make up and / or the relationship between the pair of low noise amplifiers that are provided for each reception path, it can be handled in the same manner.

  1 includes a plurality of antenna terminals ANT1, ANT2, transmission terminals Tx2G_1, Tx5G_1, Rx2G_1, Rx5G_1 (terminal group 1) connectable to the antenna terminal ANT1, and transmission terminals connectable to the antenna terminal ANT2. Tx2G_2, Tx5G_2, Rx2G_2, and Rx5G_2 (terminal group 2). The terminal group 1 and the terminal group 2 are configured to be separately connectable to a plurality of antenna terminals. Simultaneous reception and transmission can be performed using a plurality of reception terminals or transmission terminals for one communication system. Is possible.

  A transmission path for the first communication system will be described. The first transmission terminal Tx2G_1 for the first communication system is sequentially connected to the first antenna terminal ANT1 via the filter LPF, the power amplifier PA2G_1, the coupler CPL, the low-pass filter LPF, the duplexer DIP1, and the switch SPDT1. That is, the power amplifier PA2G_1 is provided as one amplifier in the transmission path between the first transmission terminal Tx2G_1 and the first antenna terminal ANT1. VCC_1 in FIG. 1 is a power supply terminal of the power amplifier PA2G_1. The transmission signal input from the first transmission terminal Tx2G_1 is amplified by the power amplifier PA2G_1. The signal detected by the coupler CPL is rectified by a diode and sent from Vdet_1 to a transmission control system (not shown). A single-pole double-throw switch SPDT1 whose common terminal is connected to the antenna terminal switches the connection between the antenna terminal and the transmission terminal or the reception terminal. Switching of the switch SPDT1 is controlled by a control voltage input from the switch control terminals VTX_1 and VRX_1. By switching the switch SPDT1, the first transmission terminal can be connected to the first antenna terminal.

  On the other hand, the second transmission terminal Tx2G_2 for the first communication system is sequentially connected to the second antenna terminal ANT2 via the filter LPF, the power amplifier PA2G_2, the coupler CPL, the low-pass filter LPF, the duplexer DIP2, and the switch SPDT2. The That is, the power amplifier PA2G_2 is provided as the other amplifier in the transmission path between the second transmission terminal Tx2G_2 and the second antenna terminal ANT2. VCC_2 in FIG. 1 is a power supply terminal of the power amplifier PA2G_2. The transmission signal input from the first transmission terminal Tx2G_2 is amplified by the power amplifier PA2G_2. The signal detected by the coupler CPL is rectified by a diode and sent from Vdet_2 to a transmission control system (not shown). A single-pole double-throw switch SPDT2 whose common terminal is connected to the antenna terminal switches the connection between the antenna terminal and the transmission terminal or the reception terminal. Switching of the switch SPDT2 is controlled by a control voltage input from the switch control terminals VTX_2 and VRX_2, and the second transmission terminal can be connected to the second antenna terminal by switching the switch SPDT2.

  A transmission system of the second communication system will be described. The first transmission terminal Tx5G_1 for the second communication system is sequentially connected to the first antenna terminal ANT1 through the filter LPF, the power amplifier PA5G_1, the coupler CPL, the low-pass filter LPF, the duplexer DIP1, and the switch SPDT1. That is, the power amplifier PA5G_1 is provided as one amplifier in the transmission path between the first transmission terminal Tx5G_1 and the first antenna terminal ANT1. VCC_1 in FIG. 1 is a power supply terminal of the power amplifier PA5G_1. The transmission signal input from the first transmission terminal Tx5G_1 is amplified by the power amplifier PA5G_1. The signal detected by the coupler CPL is rectified by a diode and sent from Vdet_1 to a transmission control system (not shown). Switching of the switch SPDT1 is controlled by a control voltage input from the switch control terminals VTX_1 and VRX_1. By switching the switch SPDT1, the first transmission terminal can be connected to the first antenna terminal. The duplexer DIP1 branches the transmission path connected to the switch SPDT1 into a path of the first communication system and a transmission path of the second communication system having different frequency bands.

  On the other hand, the second transmission terminal Tx5G_2 for the second communication system is sequentially connected to the second antenna terminal ANT2 via the filter LPF, the power amplifier PA5G_2, the coupler CPL, the low-pass filter LPF, the duplexer DIP2, and the switch SPDT2. The That is, the power amplifier PA5G_2 is provided as the other amplifier in the transmission path between the second transmission terminal Tx5G_2 and the second antenna terminal ANT2. VCC_2 in FIG. 1 is a power supply terminal of the power amplifier PA5G_2. The transmission signal input from the first transmission terminal Tx5G_2 is amplified by the power amplifier PA5G_2. The signal detected by the coupler CPL is rectified by a diode and sent from Vdet_2 to a transmission control system (not shown). Switching of the switch SPDT2 is controlled by a control voltage input from the switch control terminals VTX_2 and VRX_2, and the second transmission terminal can be connected to the second antenna terminal by switching the switch SPDT2. The duplexer DIP2 branches the transmission path connected to the switch SPDT2 into a first communication system path and a second communication system transmission path having different frequency bands.

  In FIG. 1, the receiving system of the first communication system will be described. The first reception terminal Rx2G_1 for the first communication system is connected to the first antenna terminal ANT1 via the balun Balun, the duplexer DIP3, and the switch SPDT1 in this order. By switching the switch SPDT1 described above, the first receiving terminal can be connected to the first antenna terminal. When the switch SPDT1 is switched to the reception side, the signal received at the first antenna terminal ANT1 passes through the duplexer DIP3 and the balun Balun and reaches the first reception terminal Rx2G_1. On the other hand, the second receiving terminal Rx2G_2 is connected to the second antenna terminal ANT2 via the balun Balun, the duplexer DIP4, and the switch SPDT2 in this order. When the switch SPDT2 is switched to the reception side, the signal received at the second antenna terminal ANT2 passes through the duplexer DIP4 and the balun Balun and reaches the second reception terminal Rx2G_2. In addition, the presence / absence, arrangement, and configuration of circuit elements other than those defined in the present invention can be changed as appropriate according to required characteristics.

  A receiving system of the second communication system will be described. The first receiving terminal Rx5G_1 for the second communication system is connected to the first antenna terminal ANT1 via the balun Balun, the duplexer DIP3, and the switch SPDT1 in this order. By switching the switch SPDT1 described above, the first receiving terminal can be connected to the first antenna terminal. In addition, the duplexer DIP3 branches the reception path connected to the switch SPDT1 into a reception path of the first communication system and a reception path of the second communication system having different frequency bands. When the switch SPDT1 is switched to the reception side, the signal received at the first antenna terminal ANT1 passes through the duplexer DIP3 and the balun Balun and reaches the first reception terminal Rx5G_1. On the other hand, the second reception terminal Rx5G_2 is connected to the second antenna terminal ANT2 via the balun Balun, the duplexer DIP4, and the switch SPDT2 in this order. By switching the above-described switch SPDT2, the second receiving terminal can be connected to the second antenna terminal. Further, the duplexer DIP4 branches the reception path connected to the switch SPDT2 into a reception path of the first communication system and a reception path of the second communication system having different frequency bands. When the switch SPDT2 is switched to the reception side, the signal received at the second antenna terminal ANT2 passes through the duplexer DIP4 and the balun Balun and reaches the second reception terminal Rx5G_2. In addition, the presence / absence, arrangement, and configuration of circuit elements other than those defined in the present invention can be changed as appropriate according to required characteristics.

  The internal electrode structure of the multilayer dielectric substrate (ceramic laminate) of the high-frequency module according to the above embodiment will be described with reference to FIG. The high-frequency module is formed by laminating 17 layers of ceramic dielectric sheets on which an electrode pattern is printed. FIG. 2 shows a part thereof. As shown in FIG. 2, the multilayer dielectric substrate of the present embodiment is a vertically long rectangle. Each dielectric sheet has a first path in which the upper half of the figure is connected to the first antenna terminal, and a lower half of the multilayer dielectric substrate is the first. This corresponds to the second path connected to the two antenna terminals.

  On the upper surface of the multilayer dielectric substrate shown in FIG. 2, a plurality of land electrodes for mounting chip components not incorporated in the multilayer dielectric substrate are formed. On these electrodes, switches SPDT1, SPDT2, Semiconductor elements such as power amplifiers PA2G_1, PA5G_1, PA2G_2, and PA5G_2 are mounted. Further, a Schottky diode, a chip capacitor, a chip inductor, and a chip resistor are mounted. The land electrode is connected to a connection line formed in the multilayer dielectric substrate via a via hole, or a circuit element such as a transmission line or a capacitor element, and constitutes a circuit of the high-frequency module as a whole. The semiconductor element mounted on the land electrode can be mounted on the multilayer dielectric substrate in a bare state, and can be sealed with a resin or a tube. By configuring the high-frequency circuit component as a multilayer dielectric substrate in this way, it is possible to reduce the size and increase the integration, and it is also possible to reduce the number of components used as a communication device. Note that the RFIC and the baseband IC that constitute the transmission / reception circuit section can be combined with the multilayer dielectric substrate.

  In the first layer of FIG. 2, power amplifiers are mounted at four locations surrounded by a solid line. In the region surrounded by the dotted line indicated by A in the figure as seen through from the stacking direction of the multilayer dielectric substrate, the output matching circuits, filters, duplexers of the power amplifiers PA2G_1 and PA5G_1 in the first path, A path to the switch and antenna is formed in the multilayer dielectric substrate. This region is a region where a large amount of the signal amplified by the power amplifier flows in the first path. That is, a circuit between one power amplifier PA2G_1 on the transmission path for the first communication system and the first antenna terminal ANT1 is formed in a region surrounded by a dotted line indicated by A as an output side circuit. Similarly, a circuit between one power amplifier PA5G_1 on the transmission path for the second communication system and the first antenna terminal ANT1 is also formed in an area surrounded by a dotted line indicated by A as an output side circuit. Yes. On the other hand, in the region surrounded by the dotted line indicated by B in the figure as seen through from the stacking direction of the multilayer dielectric substrate, the transmission terminals TX2G_2 and TX5G_2 of the second path, the low pass filter, the power amplifiers PA2G_2 and PA5G_2 A path to the input matching circuit is formed in the multilayer dielectric substrate. This region is a region where a lot of signals before being amplified by the power amplifier flow in the second path. That is, the circuit between the second transmission terminal Tx2G_2 for the first communication system and the other power amplifier PA2G_2 is formed in the area surrounded by the dotted line indicated by B as the input side circuit. A circuit between the second transmission terminal Tx5G_2 for the second communication system and the other power amplifier PA5G_2 is also formed in a region surrounded by a dotted line indicated by B as an input side circuit. Note that the electrode on which the power amplifier element is mounted, which is surrounded by a solid line, is in contact with both the output matching circuit and the input matching circuit of the power amplifier, and thus corresponds to both the regions A and B.

  In the second layer, planar ground electrodes e11 and e21 are formed in most of the plane. The ground electrode corresponding to the region A is e11, and the ground electrode corresponding to the region B is e21. e11 and e21 are connected to the ground electrode on the back surface of the multilayer dielectric substrate through through-holes and contain a certain amount of parasitic inductance, so that an ideal grounding state is not achieved. Therefore, by dividing the ground electrode pattern into regions A and B like the ground electrodes e11 and e21, signal leakage from the region A to the region B can be suppressed. In the embodiment shown in FIG. 2, the ground electrodes e14 and e24 in the fourth layer, the ground electrodes e15 and e25 in the fifth layer, the ground electrodes e17 and e27 in the ninth layer, the ground electrodes e18, e28 and 13 in the eleventh layer. Like the ground electrodes e19 and e29 in the eye, the pattern of the ground electrode is also divided into the regions A and B in the other dielectric layers. That is, on the inner layer of the dielectric substrate, in the first communication system, the ground electrode provided on the dielectric layer corresponding to the input side circuit of one power amplifier PA2G_1 of the paired power amplifiers and the one One internal ground conductor layer composed of a ground electrode formed in a dielectric layer immediately below the power amplifier PA2G_1, and a ground provided in the dielectric layer corresponding to the output side circuit of the other power amplifier PA2G_2 in the pair The electrode and the other internal ground conductor layer made of the ground electrode formed on the dielectric layer immediately below the other power amplifier PA2G_2 are provided separately from each other.

  Similarly, also in the second communication system, a ground electrode provided on the dielectric layer corresponding to the input side circuit of one power amplifier PA5G_1 of the paired power amplifiers and the one directly below the one power amplifier PA5G_1 One internal ground conductor layer composed of a ground electrode formed on the dielectric layer, a ground electrode provided on the dielectric layer corresponding to the output side circuit of the other power amplifier PA5G_2 of the pair, and the other power The other internal ground conductor layer composed of the ground electrode formed on the dielectric layer immediately below the amplifier PA5G_2 is provided separately from each other. For this reason, it is not possible to form a ground for partitioning the transmission paths due to the miniaturization of the high-frequency module, and it is possible to ensure isolation between the transmission paths even when the ground electrode includes a parasitic inductance. The ground electrode provided on the dielectric layer corresponding to the input side circuit (output side circuit) is connected to the inductance element or capacitance element in the input side circuit (output side circuit), or constitutes a transmission line. For example, a planar ground electrode or the like is required. The ground electrode formed in the dielectric layer immediately below the power amplifier (amplifier) is a ground electrode formed for the purpose of shielding or the like on the dielectric layer adjacent to the uppermost layer on which the power amplifier (amplifier) is mounted. is there. Each of the internal ground conductor layers provided separately from each other includes a ground electrode provided on the dielectric layer corresponding to the input side circuit (output side circuit) and a dielectric layer immediately below the amplifier as in the embodiment shown in FIG. Or a ground electrode provided on the dielectric layer corresponding to the input side circuit (output side circuit), or formed on the dielectric layer immediately below the amplifier. You may be comprised only by the ground electrode.

  The embodiment shown in FIG. 2 relates to the case where the amplifier is a power amplifier that amplifies the transmission signal. However, when the amplifier is a low-noise amplifier that amplifies the reception signal, the first antenna terminal ANT1 is used. Between the low-noise amplifier in the reception path and the low-noise amplifier in the reception path, and the second low-noise amplifier in the reception path and the second reception terminal Rx2G_2 for the first communication system (second reception terminal for the second communication system) The circuit between the Rx5G_2) and the Rx5G_2) may be regarded as an output side circuit so as to satisfy the configuration related to the internal ground conductor layer.

  The ground electrode e01 in the 14th layer and the ground electrode e02 in the 16th layer are also connected to the ground electrode on the back surface of the multilayer dielectric substrate through the through holes. However, since the through hole length is short, the parasitic inductance is negligible. small. For this reason, signal leakage from the region A to the region B can be ignored. Therefore, the ground electrodes e01 and e02 are not divided into the regions A and B but are formed integrally. That is, each internal ground conductor layer is a ground electrode that is a common ground conductor layer formed in the 14th and 16th layers between each internal ground conductor layer and the mounting surface (back surface) of the multilayer dielectric substrate. It is connected to e01 and e02. The ground electrodes e01 and e02, which are common ground conductor layers, are formed on the dielectric layers from the mounting surface side to the fourth layer, and are lower than the ground electrodes e01 and e02 (between the ground electrode and the mounting surface). ) Is a region where a grounding capacitor and a power source line of a semiconductor element are mainly formed.

  The internal electrode structure of the multilayer dielectric substrate of FIG. 2 will be further described. The planar ground electrodes constituting the internal ground conductor layer divided into the regions A and B are the same layer (second layer, fourth layer, fifth layer, ninth layer, eleventh layer, thirteenth layer). The ground electrode formed in the A region and the ground electrode formed in the B region are disposed in the same layer, and the common ground conductor layer formed in the lower layer (14th layer, 16th layer) The distance in the stacking direction is the same. Furthermore, including the planar ground electrode constituting the internal ground conductor layer, the ground electrode related to the signal path connected to the first antenna terminal and the second antenna terminal on the upper layer side than the common ground conductor layer. Each dielectric layer has the same shape as the ground electrode related to the signal path to be connected. That is, the same electrode pattern is formed on both sides of the center line that bisects the rectangle, and has translational symmetry. This is not limited to the ground electrode, and the same applies to a transmission line pattern and a capacitor electrode pattern that are formed between the ground electrodes and constitute a filter, a duplexer, and the like. That is, from the first layer to the thirteenth layer, the electrode pattern related to the signal path connected to the first antenna terminal and the electrode pattern related to the signal path connected to the second antenna terminal all have the same shape.・ It is arranged. This makes it possible to share the design of the electrode pattern related to the signal path connected to the first and second antenna terminals.

  The terminal arrangement on the back surface, which is the mounting surface of the multilayer dielectric substrate, is aligned with Tx2G_1, Tx5G_1, Rx2G_1, Rx5G_1, Tx2G_2, Tx5G_2, Rx2G_2, and Rx5G_2 from the upper left to the lower left of the figure. That is, the first transmission terminal Tx5G_1 for the second communication system is arranged between the first transmission terminal Tx2G_1 for the first communication system and the first reception terminal Rx2G_1 for the first communication system, and the second communication A first reception terminal Rx2G_1 for the first communication system is disposed between the first transmission terminal Tx5G_1 for the system and the first reception terminal Rx5G_1 for the second communication system, and the second for the first communication system The second transmission terminal Tx5G_2 for the second communication system is arranged between the transmission terminal Tx2G_2 of the first communication system and the second reception terminal Rx2G_1 for the first communication system, and the second transmission terminal Tx5G_2 for the second communication system A second receiving terminal Rx2G_2 for the first communication system is arranged between the second receiving terminal Rx5G_2 for the second communication system. By adopting such an arrangement, the transmission terminal / reception terminal of the same communication system, and the transmission / reception paths connected thereto are not arranged adjacent to each other, and the isolation between paths during transmission / reception can be increased. It becomes possible. Further, at the time of transmission, the transmission signal output from the power amplifier passes through the receiving circuit, so that feedback to the input side circuit of the power amplifier can be prevented and the risk of oscillation can be reduced. Also, first and second transmission terminals and first and second reception terminals for the first communication system, and first and second transmission terminals and first and second reception terminals for the second communication system. Are formed along one side of a rectangular mounting surface, and the antenna terminals ANT1 and ANT2 are formed along one side opposite to the one side.

  The effect of this embodiment is shown using FIG. Preventing the signal leakage from the region A to the region B improves the isolation from the output of the power amplifier in the path 1 to the input of the power amplifier in the path 2. FIG. 3 shows an evaluation result of isolation from the output of the power amplifier PA2G_1 to the input of the power amplifier PA2G_2 as an example. It can be seen that the isolation when the ground electrodes e11 and e21 existing in the second layer are divided is improved by 10 dB compared to the case where the ground electrodes are not divided.

  In the present embodiment, the output side of the power amplifier in the first path is described as region A, and the input side of the power amplifier in the second path is described as region B. Conversely, the power amplifier in the second path is The same applies to the isolation from the output side to the input side of the power amplifier in the first path, and the description is omitted here.

  The high-frequency circuit of the high-frequency circuit component according to the present invention is not limited to the dual-band 2T2R embodiment shown in FIG. For example, the present invention can be applied to a high-frequency circuit component having a single-band 2T2R high-frequency circuit as shown in FIG. Since the embodiment shown in FIG. 4 is a single band, it differs from the embodiment shown in FIG. 1 in that the duplexers DIP1 to DIP4 are not required. That is, in the embodiment shown in FIG. 4, the first and second antenna terminals ANT1 and ANT2 are used as the plurality of antenna terminals, and the first and second reception terminals Rx2G_1 and Rx2G_2 for the first communication system are used as the plurality of reception terminals. The first and second transmission terminals Tx2G_1 and Tx2G_2 for the first communication system are provided as a plurality of transmission terminals. The first receiving terminal Rx2G_1 for the first communication system can be connected to the first antenna terminal ANT1, the second receiving terminal Rx2G_2 for the first communication system can be connected to the second antenna terminal ANT2, The first transmission terminal Tx2G_1 for the communication system can be connected to the first antenna terminal ANT1, and the second transmission terminal Tx2G_2 for the first communication system can be connected to the second antenna terminal ANT2. Furthermore, one amplifier PA2G_1 is provided in the transmission path between the first transmission terminal Tx2G_1 for the first communication system and the first antenna terminal ANT1, and the second transmission terminal Tx2G_2 for the first communication system is provided. The other amplifier PA2G_2 is provided in the transmission path between the second antenna terminal ANT2. In this case, the circuit between the first transmission terminal Tx2G_1 for the first communication system and the one amplifier PA2G_1 is an input side circuit, and the circuit between the other amplifier PA2G_2 on the transmission path and the second antenna terminal ANT2 is used. The circuit is an output side circuit. With regard to such an input side circuit and an output side circuit, the same configuration as that of the embodiment shown in FIGS. Other parts are the same as those of the embodiment shown in FIGS. Note that, instead of or in addition to the power amplifier of the transmission path of the embodiment shown in FIG. 4, a low noise amplifier is provided in each reception path of the first communication system, and the relationship between the paired low noise amplifiers is as shown in FIG. The configuration related to the internal ground conductor layer similar to the embodiment shown in FIG.

  In the case of the embodiment shown in FIG. 4, between the first transmission terminal Tx2G_1 for the first communication system and the second transmission terminal Tx2G_2 for the first communication system, from the same viewpoint as the embodiment shown in FIG. The first reception terminal Rx2G_1 for the first communication system is arranged in the first communication system between the first reception terminal Rx2G_1 for the first communication system and the second reception terminal Rx2G_2 for the first communication system. The second transmission terminal Tx2G_2 for use is arranged. In addition, the first and second transmission terminals and the first and second reception terminals for the first communication system are formed along one side of the rectangular mounting surface, and the antenna terminals ANT1 and ANT2 are opposed to the one side. Formed along one side.

  As the high-frequency circuit of the high-frequency circuit component according to the present invention, a single-band 1T2R as shown in FIG. 5 and a dual-band 1T2R as shown in FIG. 6 can be adopted. Since the embodiment shown in FIGS. 5 and 6 is 1T2R, it differs from the embodiment shown in FIGS. 1 and 4 in that the second transmission terminal is not required. That is, in the embodiment shown in FIG. 5, the first and second antenna terminals ANT1 and ANT2, the first and second reception terminals Rx2G_1 and Rx2G_2 for the first communication system as a plurality of reception terminals, and the first communication system. First transmission terminal Tx2G_1. The first transmission terminal Tx2G_1 for the first communication system can be connected to the first antenna terminal ANT1 via the power amplifier PA2G_1, and the first reception terminal Rx2G_1 for the first communication system is connected to the first antenna terminal ANT1. The second receiving terminal Rx2G_2 for the first communication system is configured to be connectable to the second antenna terminal ANT2. Further, a low noise amplifier LNA2G_1 is provided as one amplifier in the reception path between the first reception terminal Rx2G_1 for the first communication system and the first antenna terminal ANT1, and the second reception terminal for the first communication system is provided. A low noise amplifier LNA2G_2 is provided as the other amplifier in the reception path between Rx2G_2 and the second antenna terminal ANT2. In this case, the circuit between the first antenna terminal ANT1 and one amplifier (low noise amplifier LNA2G_1) is an input side circuit, and the other amplifier (low noise amplifier LNA2G_2) and the second receiving terminal for the first communication system. A circuit between the two is an output side circuit. With respect to the input side circuit and the output side circuit, the configuration related to the internal ground conductor layer similar to the embodiment shown in FIG. 2 is satisfied.

  Further, in the embodiment shown in FIG. 6, in addition to the high-frequency circuit of the embodiment shown in FIG. 5, a first transmission terminal Tx5G_1 for the second communication system and a plurality of reception terminals for the second communication system are used. 1 and second receiving terminals Rx5G_1 and Rx5G_2. The first transmission terminal Tx5G_1 for the second communication system can be connected to the first antenna terminal ANT1, the first reception terminal Rx5G_1 for the second communication system can be connected to the first antenna terminal ANT1, The second receiving terminal Rx5G_2 for the communication system is configured to be connectable to the second antenna terminal ANT2. A low noise amplifier LNA5G_1 is further provided as one amplifier in the reception path between the first reception terminal Rx5G_1 for the second communication system and the first antenna terminal ANT1, and the second reception terminal Rx5G_2 for the second communication system is provided. The other amplifier low noise amplifier LNA5G_2 is further provided in the reception path between the first antenna terminal ANT2 and the second antenna terminal ANT2. In this case, a circuit between the first antenna terminal ANT1 and one further provided amplifier (low noise amplifier LNA5G_1) is an input side circuit, and the other provided amplifier (low noise amplifier LNA5G_2) and the second communication system are used. A circuit between the second receiving terminal Rx5G_2 and the second receiving terminal is an output side circuit. With respect to the input side circuit and the output side circuit, the configuration related to the internal ground conductor layer similar to the embodiment shown in FIG. 2 is satisfied. In the embodiment shown in FIGS. 5 and 6, the other parts are the same as those in the embodiment shown in FIGS.

  As the high-frequency circuit of the high-frequency circuit component according to the present invention, a single-band 2T1R as shown in FIG. 7 and a dual-band 2T1R as shown in FIG. 8 can be adopted. Since the embodiment shown in FIGS. 7 and 8 is 2T1R, it differs from the embodiment shown in FIGS. 1 and 4 in that the second receiving terminal is not required. That is, in the embodiment shown in FIG. 7, the first and second antenna terminals ANT1 and ANT2, the first and second transmission terminals Tx2G_1 and Tx2G_2 for the first communication system, and the first for the first communication system. And a receiving terminal Rx2G_1. The first receiving terminal Rx2G_1 for the first communication system can be connected to the first antenna terminal ANT1, the first transmission terminal Tx2G_1 for the first communication system can be connected to the first antenna terminal ANT1, The second transmission terminal Tx2G_2 for the communication system is configured to be connectable to the second antenna terminal ANT2. One amplifier PA2G_1 is provided in the transmission path between the first transmission terminal Tx2G_1 for the first communication system and the first antenna terminal ANT1, and the second transmission terminal Tx2G_2 for the first communication system and the second The other amplifier amplifier PA2G_2 is provided on the transmission path to the antenna terminal ANT2. A circuit between the first transmission terminal Tx2G_1 for the first communication system and one amplifier amplifier PA2G_1 is an input side circuit, and a circuit between the other amplifier PA2G_2 and the first antenna terminal ANT2 is an output side circuit. It is. With respect to the input side circuit and the output side circuit, the configuration related to the internal ground conductor layer similar to the embodiment shown in FIG. 2 is satisfied.

  Further, in the embodiment shown in FIG. 8, in addition to the high-frequency circuit of the embodiment shown in FIG. 7, a first receiving terminal Rx5G_1 for the second communication system and a second transmission system for the second communication system as a plurality of transmission terminals. 1 and second transmission terminals Tx5G_1 and Tx5G_2. The first receiving terminal Rx5G_1 for the second communication system can be connected to the first antenna terminal ANT1, the first transmission terminal Tx5G_1 for the second communication system can be connected to the first antenna terminal ANT1, The second transmission terminal Tx5G_2 for the communication system is configured to be connectable to the second antenna terminal ANT2. One amplifier PA5G_1 is further provided in the transmission path between the first transmission terminal Tx5G_1 for the second communication system and the first antenna terminal ANT1, and the second transmission terminal Tx5G_2 for the second communication system and the second The other amplifier PA5G_2 is further provided in the transmission path to the antenna terminal ANT2. A circuit between the first transmission terminal Tx5G_1 for the second communication system and one amplifier PA5G_1 is an input side circuit, and a circuit between the other amplifier PA5G_2 and the second antenna terminal ANT2 is an output side circuit. is there. With respect to the input side circuit and the output side circuit, the configuration related to the internal ground conductor layer similar to the embodiment shown in FIG. 2 is satisfied. In the embodiment shown in FIGS. 7 and 8, the other parts are the same as those in the embodiment shown in FIGS.

  The multilayer dielectric substrate is made of, for example, a ceramic dielectric material that can be sintered at a low temperature of 1000 ° C. or lower, and a conductive paste such as Ag or Cu having a low resistivity is printed on a green sheet having a thickness of 10 μm to 200 μm. It can be manufactured by forming a predetermined electrode pattern, appropriately laminating a plurality of green sheets, and sintering.

  The electrode pattern is usually formed by a printing method, but it can also be formed by a thin film method such as sputtering, vacuum deposition, or plating. A high-frequency circuit component excellent in L / S (line / space) can be manufactured. Even in the printing method, when Ag nanoparticles are used, it is possible to manufacture a high-frequency circuit component with excellent L / S (line / space) and extremely high integration.

As the dielectric material, for example, materials containing Al, Si, Sr as main components and Ti, Bi, Cu, Mn, Na, K as subcomponents, and Ca, Pb, Na containing Al, Si, Sr as main components are used. , K, a material containing multiple components, a material containing Al, Mg, Si, or Gd, or a material containing Al, Si, Zr, or Mg is used. A material having a dielectric constant of about 5 to 15 is used. In addition to the ceramic dielectric material, it is also possible to use a resin multilayer substrate or a multilayer substrate made of a composite material obtained by mixing a resin and ceramic dielectric powder. Further, the ceramic substrate is made of HTCC (high temperature co-fired ceramic) technology, the dielectric material is mainly Al ₂ O ₃ , and the transmission line is a metal conductor that can be sintered at a high temperature such as tungsten or molybdenum. You may comprise as.

  In addition, a plurality of thermal vias are provided from the upper surface to the rear surface in the portion of the multilayer substrate where the semiconductor element for the high frequency amplifier circuit is mounted. This is to improve heat dissipation. In order to suppress unnecessary noise radiation, a wide ground electrode is appropriately formed on the internal green sheet.

  In the multilayer substrate, each circuit is three-dimensionally configured on the multilayer substrate. Here, the electrode pattern constituting each circuit is grounded by a ground electrode (a planar ground electrode or a via hole connected to the ground electrode) so as to prevent unnecessary electromagnetic interference with the electrode pattern constituting each other circuit. It is preferable that they do not overlap each other when viewed in the stacking direction, such as separation.

  The high-frequency circuit component of the present invention can be deployed in various communication devices that employ the MIMO system. Especially applicable to mobile phones, Bluetooth (registered trademark) communication devices, wireless LAN communication devices (802.11a / b / g / n), WIMAX (802.16e), IEEE802.20 (I-burst), etc. that handle high frequencies. It is possible. For example, it supports a high-frequency front-end module or IEEE 802.11n standard that can share two communication systems of 2.4 GHz band wireless LAN (IEEE 802.11b and / or IEEE 802.11g) and 5 GHz band wireless LAN (IEEE 802.11a). It is possible to realize a small-sized multiband communication device equipped with such a high-frequency front-end module. The communication system is not limited to the frequency band and communication standard described above, and can be used for various communication systems. In addition to the two communication systems, for example, by adopting a mode in which the branching circuit is further branched in multiple stages, it is possible to cope with a larger number of communication systems. Examples of multiband communication devices include wireless communication devices typified by mobile phones, personal computers (PCs), PC peripherals such as printers and hard disks, broadband routers, fax machines, refrigerators, standard televisions (SDTV), and high-definition televisions. (HDTV), camera, video, etc. can be deployed in home electronic devices.

It is a circuit block diagram of the high frequency circuit component concerning the embodiment of the present invention. It is a lamination figure of a multilayer dielectric substrate concerning an embodiment of the present invention. It is a figure explaining the effect of embodiment of this invention. It is a circuit block diagram of the high frequency circuit component which concerns on other embodiment of this invention. It is a circuit block diagram of the high frequency circuit component which concerns on other embodiment of this invention. It is a circuit block diagram of the high frequency circuit component which concerns on other embodiment of this invention. It is a circuit block diagram of the high frequency circuit component which concerns on other embodiment of this invention. It is a circuit block diagram of the high frequency circuit component which concerns on other embodiment of this invention. It is explanatory drawing regarding the isolation between paths. It is explanatory drawing of the conventional high frequency module.

Explanation of symbols

ANT1, ANT2: antenna terminals SPDT1, SPDT2: switches DIP1-4: duplexers
PA2G_1, PA5G_1, PA2G_2, PA5G_2: Power amplifier
e11, e21, e14, e24, e15, e25, e17, e27, e19, e29, e01, e02: Ground electrode
Tx2G_1, Tx2G_2, Tx5G_1, Tx5G_2: Transmit terminal
Rx2G_1, Rx2G_2, Rx5G_1, Rx5G_2: Transmit terminal

Claims (10)

A dielectric substrate formed by laminating a plurality of dielectric layers;
A high-frequency circuit having a plurality of antenna terminals formed on the dielectric substrate and a plurality of transmission terminals and / or a plurality of reception terminals that can be separately connected to each of the plurality of antenna terminals for one communication system. Parts,
An amplifier for amplifying a high-frequency signal is provided for each transmission path between the plurality of antenna terminals and the plurality of transmission terminals and / or for each reception path between the plurality of antenna terminals and the plurality of reception terminals. And
In the relationship between the pair of amplifiers provided for each transmission path and / or in the relationship between the pair of amplifiers provided for each reception path,
The inner layer of the dielectric substrate is formed on a ground electrode provided on the dielectric layer corresponding to an input side circuit of one amplifier of the pair and / or a dielectric layer immediately below the one amplifier. One internal ground conductor layer composed of ground electrodes,
The other internal ground consisting of a ground electrode provided on the dielectric layer corresponding to the output side circuit of the other amplifier of the pair and / or a ground electrode formed on the dielectric layer immediately below the other amplifier The conductor layer is provided separately from each other,
Each of the internal ground conductor layers is connected to a common ground conductor layer formed between each of the internal ground conductor layers and the mounting surface of the dielectric substrate. First and second antenna terminals as the plurality of antenna terminals;
First and second receiving terminals for a first communication system as the plurality of receiving terminals;
A first transmission terminal for the first communication system,
A first transmission terminal for the first communication system is connectable to the first antenna terminal;
The first receiving terminal for the first communication system is connectable to the first antenna terminal,
A second receiving terminal for the first communication system is configured to be connectable to the second antenna terminal;
The one amplifier is provided in a receiving path between the first receiving terminal for the first communication system and the first antenna terminal;
The other amplifier is provided in the reception path between the second reception terminal for the first communication system and the second antenna terminal;
The circuit between the first antenna terminal and the one amplifier is the input side circuit,
2. The high-frequency circuit component according to claim 1, wherein a circuit between the other amplifier and the second receiving terminal for the first communication system is the output side circuit. A first transmission terminal for a second communication system;
The first and second receiving terminals for the second communication system as the plurality of receiving terminals,
The first transmission terminal for the second communication system is connectable to the first antenna terminal,
The first receiving terminal for the second communication system is connectable to the first antenna terminal,
A second receiving terminal for the second communication system is configured to be connectable to the second antenna terminal;
The one amplifier is further provided in a receiving path between the first receiving terminal for the second communication system and the first antenna terminal;
The other amplifier is further provided in a reception path between the second reception terminal for the second communication system and the second antenna terminal;
The circuit between the first antenna terminal and the one amplifier is the input side circuit,
The high-frequency circuit component according to claim 2, wherein a circuit between the other amplifier and a second receiving terminal for the second communication system is the output side circuit. First and second antenna terminals as the plurality of antenna terminals;
First and second receiving terminals for a first communication system as the plurality of receiving terminals;
The first and second transmission terminals for the first communication system as the plurality of transmission terminals,
The first receiving terminal for the first communication system is connectable to the first antenna terminal,
A second receiving terminal for the first communication system is connectable to the second antenna terminal;
A first transmission terminal for the first communication system is connectable to the first antenna terminal;
A second transmission terminal for the first communication system is configured to be connectable to the second antenna terminal;
A reception path between the first reception terminal for the first communication system and the first antenna terminal, and / or a first transmission terminal for the first communication system and the first antenna terminal. The one amplifier is provided in the transmission path between,
A reception path between the second reception terminal for the first communication system and the second antenna terminal, and / or a second transmission terminal for the first communication system and the second antenna terminal. The other amplifier is provided in the transmission path between,
A circuit between the first antenna terminal and the one amplifier of the reception path and / or a circuit between the first transmission terminal for the first communication system and the one amplifier is the input side. Circuit,
A circuit between the other amplifier of the reception path and a second reception terminal for the first communication system and / or a circuit between the other amplifier of the transmission path and the second antenna terminal; The high-frequency circuit component according to claim 1, wherein the high-frequency circuit component is an output side circuit. First and second transmission terminals for the second communication system as the plurality of transmission terminals;
The first and second receiving terminals for the second communication system as the plurality of receiving terminals,
The first transmission terminal for the second communication system is connectable to the first antenna terminal,
A second transmission terminal for the second communication system is connectable to the second antenna terminal;
The first receiving terminal for the second communication system is connectable to the first antenna terminal,
A second receiving terminal for the second communication system is configured to be connectable to the second antenna terminal;
A reception path between the first reception terminal for the second communication system and the first antenna terminal, and / or a first transmission terminal for the second communication system and the first antenna terminal. The one amplifier is further provided in the transmission path between,
A reception path between the second reception terminal for the second communication system and the second antenna terminal, and / or a second transmission terminal for the second communication system and the second antenna terminal. The other amplifier is further provided in the transmission path between,
A circuit between the first antenna terminal and the one amplifier of the reception path and / or a circuit between the first transmission terminal for the second communication system and the one amplifier is the input side. Circuit,
A circuit between the other amplifier of the reception path and a second reception terminal for the second communication system, and / or a circuit between the other amplifier of the transmission path and the second antenna terminal, The high-frequency circuit component according to claim 4, wherein the high-frequency circuit component is an output side circuit. First and second antenna terminals as the plurality of antenna terminals;
First and second transmission terminals for a first communication system as the plurality of transmission terminals;
A first receiving terminal for the first communication system,
The first receiving terminal for the first communication system is connectable to the first antenna terminal,
A first transmission terminal for the first communication system is connectable to the first antenna terminal;
A second transmission terminal for the first communication system is configured to be connectable to the second antenna terminal;
The one amplifier is provided in a transmission path between a first transmission terminal for the first communication system and the first antenna terminal;
The other amplifier is provided in the transmission path between the second transmission terminal for the first communication system and the second antenna terminal;
The circuit between the first transmission terminal for the first communication system and the first amplifier is the input side circuit,
The high-frequency circuit component according to claim 1, wherein a circuit between the other amplifier and the first antenna terminal is the output-side circuit. A first receiving terminal for the second communication system;
The first and second transmission terminals for the second communication system as the plurality of transmission terminals;
The first receiving terminal for the second communication system is connectable to the first antenna terminal,
The first transmission terminal for the second communication system is connectable to the first antenna terminal,
A second transmission terminal for the second communication system is configured to be connectable to the second antenna terminal;
The one amplifier is further provided in the transmission path between the first transmission terminal and the first antenna terminal for the second communication system;
The other amplifier is further provided in the transmission path between the second transmission terminal for the second communication system and the second antenna terminal;
The circuit between the first transmission terminal for the second communication system and the one amplifier is the input side circuit,
7. The high frequency circuit component according to claim 6, wherein a circuit between the other amplifier and the second antenna terminal is the output side circuit. On the mounting surface of the dielectric substrate, a first reception terminal for the first communication system is provided between a first transmission terminal for the first communication system and a second transmission terminal for the first communication system. Arranged,
A second transmission terminal for the first communication system is arranged between a first reception terminal for the first communication system and a second reception terminal for the first communication system. The high-frequency circuit component according to claim 4 On the mounting surface of the dielectric substrate, the first transmission terminal for the second communication system is between the first transmission terminal for the first communication system and the first reception terminal for the first communication system. Is placed,
A first reception terminal for the first communication system is disposed between a first transmission terminal for the second communication system and a first reception terminal for the second communication system;
A second transmission terminal for the second communication system is disposed between the second transmission terminal for the first communication system and the second reception terminal for the first communication system;
The second receiving terminal for the first communication system is arranged between a second transmitting terminal for the second communication system and a second receiving terminal for the second communication system. Item 5. The high-frequency circuit component according to Item 5. A communication apparatus using the high-frequency circuit component according to claim 1.

Images