JP2010093146A - High-frequency module and transmitting/receiving apparatus - Google Patents

High-frequency module and transmitting/receiving apparatus Download PDF

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JP2010093146A
JP2010093146A JP2008263370A JP2008263370A JP2010093146A JP 2010093146 A JP2010093146 A JP 2010093146A JP 2008263370 A JP2008263370 A JP 2008263370A JP 2008263370 A JP2008263370 A JP 2008263370A JP 2010093146 A JP2010093146 A JP 2010093146A
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frequency
cavity
circuit board
frequency module
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Tadashi Isono
忠 磯野
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Hitachi Astemo Ltd
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Hitachi Automotive Systems Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a low-cost high-frequency module by having such a structure as to suppress component costs and hermetically seal in the high-frequency module using a dielectric substrate having a cavity for mounting an MMIC. <P>SOLUTION: A high-frequency module includes: a circuit board having a high-frequency transmission line for transmitting high-frequency signals and a wiring pattern for driving a high-frequency IC and having ceramic substrates stacked; a high-frequency IC that is electrically connected with the circuit board; a metal plate for holding the circuit board; and a cover for packaging the high-frequency IC. The circuit board includes a first cavity and a second cavity that surrounds the outer periphery of the first cavity. The high-frequency IC is mounted in the first cavity, and the cover is joined to the outer periphery of the second cavity. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、高周波モジュール及びそれを用いた送受信装置に関する。   The present invention relates to a high-frequency module and a transmission / reception device using the same.

自動車の安全への関心が高まる中、安全運転システムのセンサの一つとして、ミリ波レーダが製品化され、その搭載率は年々増加傾向にあり、近年では、低価格設定の車種にまで普及しつつある。ミリ波レーダを更に一般化するためには、低コスト化が課題である。   Amid growing interest in automobile safety, millimeter-wave radar has been commercialized as one of the sensors for safe driving systems, and its mounting rate has been increasing year by year. In recent years, it has spread to low-priced models. It's getting on. In order to further generalize millimeter wave radar, cost reduction is an issue.

ここで、多層誘電体基板の高周波回路面側、即ち高周波信号の生成及び送受信回路をなす高周波部品の実装面側と導波路を有する金属プレートを接続した車載用ミリ波レーダの高周波モジュールが開示されている（特許文献１参照）。   Here, there is disclosed a high-frequency module for an in-vehicle millimeter-wave radar in which a metal plate having a waveguide is connected to a high-frequency circuit surface side of a multilayer dielectric substrate, that is, a mounting surface side of a high-frequency component forming a high-frequency signal and transmitting / receiving circuit. (See Patent Document 1).

特許文献１には、導波管アダプタ２６が高周波デバイス２４の上面に設けられ、この導波管アダプタ２６によって、誘電体基板に設けられたキャビティ内のＭＩＣや高周波ＩＣであるモノリシックマイクロ波集積回路（Monolithic Microwave Integrated Circuit：以下、ＭＭＩＣと称する）等の複数の高周波チップと各チップを接続するマイクロストリップ線路，トリプレート線路やコプレーナ線路等の高周波伝送線路が、高周波デバイス２４（高周波モジュールと同意）内で気密パッケージ化された高周波モジュールが記載されている。   In Patent Document 1, a waveguide adapter 26 is provided on the upper surface of the high-frequency device 24, and a monolithic microwave integrated circuit that is a MIC or a high-frequency IC in a cavity provided on a dielectric substrate by the waveguide adapter 26. (Monolithic Microwave Integrated Circuit: hereinafter referred to as “MMIC”) and a high-frequency transmission line such as a microstrip line, a triplate line, a coplanar line, etc. that connect each chip to a high-frequency device 24 (agrees with a high-frequency module) A high frequency module hermetically packaged is described.

特開２００２−８４２０８号公報JP 2002-84208 A

特許文献１によれば、ＭＭＩＣはベアチップであり、高周波特性を確保するためにチップ表面に保護膜を有していないものが殆どであるため、ＭＭＩＣを実装した高周波モジュールは、通常、湿度の浸入を許さない気密封止パッケージを採用せざるを得ず、パッケージに用いる部品，工数がコストアップの要因となってしまう、という課題がある。   According to Patent Document 1, since the MMIC is a bare chip, and most of the chips do not have a protective film on the chip surface in order to ensure high frequency characteristics, the high frequency module on which the MMIC is mounted is usually infiltrated with humidity. Therefore, there is a problem that a hermetic sealed package that does not permit the use of the package is unavoidable, and the components and man-hours used in the package increase the cost.

又、特許文献１の図５によれば、高周波モジュールは発振器，増幅器，逓倍器など複数のＭＭＩＣを実装することにより構成され、それぞれのＭＭＩＣ間は誘電体基板の表面に形成された伝送線路により高周波信号の入出力を行っている（伝送線路とＭＭＩＣの電気的な接続には通常、金線ボンディングを用いる）ため、ＭＭＩＣと誘電体基板間の接続部においては、両者の形状的な不連続によって、高周波信号の放射又は反射による伝送損失が発生してしまう、という課題がある。   Further, according to FIG. 5 of Patent Document 1, the high-frequency module is configured by mounting a plurality of MMICs such as an oscillator, an amplifier, and a multiplier, and between each MMIC is a transmission line formed on the surface of the dielectric substrate. Since high-frequency signals are input and output (usually gold wire bonding is used for electrical connection between the transmission line and the MMIC), the connection between the MMIC and the dielectric substrate is discontinuous in shape. Therefore, there is a problem that transmission loss occurs due to radiation or reflection of a high-frequency signal.

そこで、本発明の第１の目的は、ＭＭＩＣを実装する為のキャビティを有する誘電体基板を用いた高周波モジュールにおいて、部品コストを抑えて気密封止できる構造とすることにより、安価な高周波モジュールを提供することにある。   Accordingly, a first object of the present invention is to provide an inexpensive high-frequency module by providing a structure that can be hermetically sealed at a reduced component cost in a high-frequency module using a dielectric substrate having a cavity for mounting an MMIC. It is to provide.

又、本発明の第２の目的は、ＭＭＩＣ実装ばらつきによる特性ばらつきを低減しつつＭＭＩＣの放熱性の良い実装構造とすることにより、精度の良い高周波モジュール並びに送受信装置を提供することにある。   A second object of the present invention is to provide a high-frequency module and a transmission / reception device with high accuracy by providing a mounting structure with good heat dissipation of MMIC while reducing variation in characteristics due to variation in MMIC mounting.

第１の目的を達成するための高周波モジュールは、高周波信号を伝送するための高周波伝送線路と高周波ＩＣを駆動するための配線パターンを有し、セラミック基板を積層してなる回路基板と、回路基板と電気的に接続した高周波ＩＣと、回路基板を保持するための金属プレートと、高周波ＩＣをパッケージするためのカバーを有し、回路基板は第１のキャビティと第１のキャビティの外周を囲む第２のキャビティを有し、第１のキャビティ内に高周波ＩＣが実装され、第２のキャビティの外周でカバーが接合される。   A high-frequency module for achieving the first object has a high-frequency transmission line for transmitting a high-frequency signal and a wiring pattern for driving a high-frequency IC, and a circuit board formed by laminating ceramic substrates, and a circuit board And a metal plate for holding the circuit board, and a cover for packaging the high frequency IC. The circuit board surrounds the first cavity and the outer periphery of the first cavity. The high frequency IC is mounted in the first cavity, and the cover is joined on the outer periphery of the second cavity.

第２の目的を達成するための高周波モジュールは、高周波信号を伝送するための高周波伝送線路と高周波ＩＣを駆動するための配線パターンを有し、セラミック基板を積層してなる回路基板と、回路基板と電気的に接続した高周波ＩＣと、回路基板を保持するための金属プレートと、高周波ＩＣをパッケージするためのカバーを有し、カバーにパッケージ内の電波を遮断するための周期的な突起が設けられ、回路基板は表裏を貫通する第１のキャビティと第１のキャビティの外周を囲む第２のキャビティを有し、回路基板は金属プレートと接合され、第１のキャビティ内に高周波ＩＣを実装し、第２のキャビティには高周波伝送線路が形成され、回路基板の表層面でカバーが接続される。   A high-frequency module for achieving a second object includes a circuit board having a high-frequency transmission line for transmitting a high-frequency signal and a wiring pattern for driving a high-frequency IC, and a laminate of ceramic substrates; A high frequency IC electrically connected to the substrate, a metal plate for holding the circuit board, a cover for packaging the high frequency IC, and a periodic protrusion for blocking radio waves in the package is provided on the cover The circuit board has a first cavity penetrating the front and back sides and a second cavity surrounding the outer periphery of the first cavity, the circuit board is bonded to a metal plate, and a high frequency IC is mounted in the first cavity. The high frequency transmission line is formed in the second cavity, and the cover is connected to the surface layer of the circuit board.

本発明によれば、ＭＭＩＣを実装する為のキャビティを有する誘電体基板を用いた高周波モジュールにおいて、部品コストを抑えて気密封止できる構造とすることにより、安価な高周波モジュールを提供することができる。又、ＭＭＩＣ実装ばらつきによる特性ばらつきを低減しつつＭＭＩＣの放熱性の良い実装構造とすることにより、精度の良い高周波モジュール並びに送受信装置を提供することができる。   According to the present invention, in a high-frequency module using a dielectric substrate having a cavity for mounting an MMIC, an inexpensive high-frequency module can be provided by adopting a structure that can be hermetically sealed while suppressing component costs. . In addition, a high-frequency module and a transmission / reception device with high accuracy can be provided by using a mounting structure with good heat dissipation of the MMIC while reducing variation in characteristics due to variation in MMIC mounting.

以下、本実施例の高周波モジュールについて、図を用いて説明する。   Hereinafter, the high-frequency module of the present embodiment will be described with reference to the drawings.

実施例１の高周波モジュールを図１から図３により説明する。   The high-frequency module of Example 1 will be described with reference to FIGS.

図１は、高周波モジュールの展開図であり、その構成は、セラミックを積層し高周波回路を構成するための配線パターンを形成した高周波回路基板１，発信器，電力増幅器，信号混合器等からなるＭＭＩＣ２，高周波回路基板１を保持し、高周波信号を伝播するための導波路５０を有する金属ベースプレート８，ＭＭＩＣをパッケージするためのカバー７からなる。   FIG. 1 is a development view of a high-frequency module, and the configuration thereof is an MMIC 2 including a high-frequency circuit board 1, a transmitter, a power amplifier, a signal mixer, and the like on which ceramics are laminated and a wiring pattern for forming a high-frequency circuit is formed. , A metal base plate 8 having a waveguide 50 for holding the high frequency circuit board 1 and propagating a high frequency signal, and a cover 7 for packaging the MMIC.

図２は、高周波モジュールの構成図である。高周波回路基板１にはＭＭＩＣ２を実装する為の第１のキャビティ６と高周波伝送線路３を形成した第２のキャビティ５の２段階のキャビティを有している。これらのキャビティ６，５は高周波回路基板１を製造する過程で形成される。即ち、高周波回路基板１の素材であるセラミックを積層する前の段階で各層のセラミックを所望のキャビティ形状に加工し、積層，焼成することで容易に形成できるものである。   FIG. 2 is a configuration diagram of the high-frequency module. The high-frequency circuit board 1 has a two-stage cavity including a first cavity 6 for mounting the MMIC 2 and a second cavity 5 in which the high-frequency transmission line 3 is formed. These cavities 6 and 5 are formed in the process of manufacturing the high-frequency circuit board 1. That is, it can be easily formed by processing the ceramic of each layer into a desired cavity shape, laminating and firing before laminating the ceramic which is the material of the high-frequency circuit board 1.

第１のキャビティ６に実装したＭＭＩＣ２は第２のキャビティ５に形成した高周波伝送線路３やＭＭＩＣ２を駆動する為のバイアス配線端子２１とボンディングワイヤ１０により接続される。バイアス配線端子２１は入出力端子４と基板内層を介して配線されており、入出力端子４は高周波モジュールの駆動電源，出力信号の接続端子を構成する。   The MMIC 2 mounted in the first cavity 6 is connected to the high-frequency transmission line 3 formed in the second cavity 5 and the bias wiring terminal 21 for driving the MMIC 2 by the bonding wire 10. The bias wiring terminal 21 is wired to the input / output terminal 4 through the inner layer of the substrate, and the input / output terminal 4 constitutes a connection terminal for driving power and output signals of the high-frequency module.

更に、高周波伝送線路３を形成した第２のキャビティ５の外枠を構成している高周波回路基板１の表層面に、金属製のカバー７を窒素雰囲気中で金属ロー材Ａ ４０を加熱接合することにより、第１のキャビティ６及び第２のキャビティ５内を気密封止する。一方、高周波回路基板１のカバー７を接合する面に対向する表層面には、高周波モジュールの保持と高周波信号の伝播を目的とした金属ベースプレート８をＡｇペーストなどの接着剤４１により接合している。   Further, the metal brazing material A40 is heated and bonded to the surface layer surface of the high frequency circuit board 1 constituting the outer frame of the second cavity 5 in which the high frequency transmission line 3 is formed in a nitrogen atmosphere. As a result, the first cavity 6 and the second cavity 5 are hermetically sealed. On the other hand, a metal base plate 8 for holding the high-frequency module and propagating the high-frequency signal is bonded to the surface layer facing the surface to which the cover 7 of the high-frequency circuit board 1 is bonded by an adhesive 41 such as an Ag paste. .

上記のように構成した高周波モジュールの構造的な特徴は、高周波回路基板１に第１のキャビティ６と第２のキャビティ５を形成した点にあり、即ち、高周波回路基板１が２段のキャビティを有している点にある。   The structural feature of the high-frequency module configured as described above is that the first cavity 6 and the second cavity 5 are formed in the high-frequency circuit board 1, that is, the high-frequency circuit board 1 has a two-stage cavity. It is in having.

このように構成することにより、通常、セラミック基板などを気密封止する為に用いられる、金属製外周枠の部材が予め高周波回路基板１に形成されているため不要となる。この外周枠の材料としてはセラミック基板の線膨張係数に合わせた、コバールや鉄ニッケル合金など、材料を用いて枠状に加工するのが一般的である。しかしながら、コバールや鉄ニッケル合金は高価であることがよく知られている上、枠状の加工は削り代が多いため、素材費用が嵩み、部品費用を低減することが困難である。即ち、本実施例の高周波モジュールの構造とすることで、このような部品費用が不要となる。   With this configuration, a metal outer peripheral frame member that is normally used for hermetically sealing a ceramic substrate or the like is formed on the high-frequency circuit board 1 in advance, and thus becomes unnecessary. As the material of the outer peripheral frame, it is generally processed into a frame shape using a material such as Kovar or iron-nickel alloy according to the linear expansion coefficient of the ceramic substrate. However, it is well known that Kovar and iron-nickel alloys are expensive, and the frame-shaped processing has a lot of machining allowance, so that the material cost increases and it is difficult to reduce the part cost. That is, by using the structure of the high-frequency module of the present embodiment, such component costs are unnecessary.

又、上記の外周枠を金属で形成した場合、パッケージ内を電磁的にシールドする効果も期待できるが、本実施例の場合、同様の効果をもたらす為には外周枠に相当する部分の全周に電源グランドと接続したスルービア３０を、電波が遮断できる間隔で配置すればよい。本構造は、一般的なスルービア成形工程で容易に実現できる。   In addition, when the outer peripheral frame is made of metal, an effect of electromagnetically shielding the inside of the package can be expected. However, in this embodiment, in order to bring about the same effect, the entire periphery of the portion corresponding to the outer peripheral frame is used. The through vias 30 connected to the power supply ground may be arranged at intervals at which radio waves can be blocked. This structure can be easily realized by a general through via molding process.

図３は、実施例１の高周波モジュールの応用例を示す図である。   FIG. 3 is a diagram illustrating an application example of the high-frequency module according to the first embodiment.

例えば、送信用ＭＭＩＣと受信用ＭＭＩＣがパッケージ内部で干渉しないように、それぞれのパッケージ空間を遮断する場合、積層基板により第１のキャビティ６，第２のキャビティ５を形成し、このうち、第２のキャビティ５は送信側と受信側の間で遮断するように２つの第２のキャビティ５を形成する。更に、両者の第２のキャビティ５を電磁的にアイソレートするためにパッケージの外壁部の全周に電源グランドと接続したスルービア３０を形成する。   For example, when the respective package spaces are blocked so that the transmitting MMIC and the receiving MMIC do not interfere with each other inside the package, the first cavity 6 and the second cavity 5 are formed by the laminated substrate. The second cavity 5 is formed so as to block between the transmitting side and the receiving side. Further, in order to electromagnetically isolate both the second cavities 5, through vias 30 connected to the power supply ground are formed all around the outer wall of the package.

ここにおいて、両キャビティ間の高周波信号の伝送はポートＡ ６１，ポートＢ ６０間を接続した基板内層線路６２により伝送する。アンテナへの高周波信号の送受も同様の給電ポート５１，給電用基板内層線路５２により伝送され、金属ベースプレート８に形成した導波路５０によりアンテナに給電する。   Here, transmission of the high-frequency signal between both cavities is performed by the substrate inner layer line 62 connecting the port A 61 and the port B 60. Transmission / reception of high-frequency signals to the antenna is also transmitted through the same power feeding port 51 and power feeding substrate inner layer line 52, and power is fed to the antenna through a waveguide 50 formed in the metal base plate 8.

図３に示す構造の外周枠部の形状を金属で加工しようとすると、メタルインジェクションモールドなど特殊かつコストの掛る加工方法を採用せざるを得なく、更に、この外枠を精度良く基板上に実装しなければならないため組立て時の加工コストも加わることになる。   When trying to process the shape of the outer peripheral frame with the structure shown in FIG. 3 with a metal, a special and costly processing method such as a metal injection mold must be employed, and the outer frame is mounted on the substrate with high accuracy. Therefore, the processing cost at the time of assembly is also added.

又、上記実施例で説明したように、当該高周波モジュールのパッケージは、いずれの場合もカバー７が金属の平板で形成できるため、カバーの加工費用も抑えることが出来る。   In addition, as described in the above embodiment, in the package of the high frequency module, the cover 7 can be formed of a metal flat plate in any case, so that the processing cost of the cover can be reduced.

以上から、本実施例の高周波モジュールとすることにより、パッケージのための部材が平板の金属プレートで形成したカバー７のみとなるため、部品加工費，組立て加工費を低減でき、安価な高周波モジュールを提供することが可能となる。   From the above, since the high frequency module of the present embodiment has only the cover 7 formed of a flat metal plate as a member for the package, the parts processing cost and the assembly processing cost can be reduced, and an inexpensive high frequency module can be obtained. It becomes possible to provide.

実施例２の高周波モジュールを図４により説明する。   The high frequency module of Example 2 will be described with reference to FIG.

実施例２は実施例１に対し、高周波回路基板１に形成した第１のキャビティ６が貫通穴とし、ＭＭＩＣ２を金属ベースプレート８に直接実装する構造としている点が相違点である。   The second embodiment is different from the first embodiment in that the first cavity 6 formed in the high-frequency circuit board 1 is a through hole and the MMIC 2 is directly mounted on the metal base plate 8.

その組立て方法の概略は、まず、高周波回路基板１と金属ベースプレート８をはんだなどの金属ロー材Ｂ ４２により加熱接合する。上記の如く、高周波回路基板１はＭＭＩＣ２を実装する部位に、貫通した第１のキャビティ６が形成されているので、この段階で第１のキャビティ６の底面は金属ベースプレート８の表面となる。   The outline of the assembling method is as follows. First, the high-frequency circuit board 1 and the metal base plate 8 are heat-bonded by a metal brazing material B 42 such as solder. As described above, since the high-frequency circuit board 1 has the first cavity 6 penetrating in the portion where the MMIC 2 is mounted, the bottom surface of the first cavity 6 becomes the surface of the metal base plate 8 at this stage.

次に、第１のキャビティ６の底面、即ち、ＭＭＩＣ金属ベースプレート８の表面にＭＭＩＣ２を実装し、ボンディングワイヤ１０の接続，カバー７の接合を行うことになる。   Next, the MMIC 2 is mounted on the bottom surface of the first cavity 6, that is, the surface of the MMIC metal base plate 8, and the bonding wires 10 are connected and the cover 7 is bonded.

ここで、高周波モジュールの高精度化を図る場合、ＭＭＩＣと誘電体基板間の接続部においては、両者の形状的な不連続によって、高周波信号の放射又は反射による伝送損失が発生しやすいため、ＭＭＩＣ２の位置的な実装ばらつきを極力抑えることが望まれる。よって、ＭＭＩＣ２を実装する被実装面側の平坦度も特性ばらつきを抑える上で精度を要求される。   Here, when the accuracy of the high-frequency module is increased, a transmission loss due to radiation or reflection of a high-frequency signal is likely to occur at the connection portion between the MMIC and the dielectric substrate due to the discontinuity of both shapes. Therefore, it is desirable to minimize the positional mounting variation. Therefore, the flatness on the mounting surface side on which the MMIC 2 is mounted is also required to be accurate in suppressing the characteristic variation.

一方、自動車などの環境温度の厳しい雰囲気においてもＭＭＩＣ２を駆動させる目的でＭＭＩＣ２の放熱を考慮した実装構造とする必要がある。その放熱手段として、セラミック基板のＭＭＩＣ２実装部に放熱用のスルービアを多数形成するのが最も一般的であるが、スルービアを形成した部位は平坦度を確保するのが非常に困難である。   On the other hand, it is necessary to have a mounting structure in consideration of heat dissipation of the MMIC 2 for the purpose of driving the MMIC 2 even in an atmosphere with severe environmental temperature such as an automobile. As the heat dissipation means, it is most common to form a large number of through vias for heat dissipation in the MMIC2 mounting portion of the ceramic substrate, but it is very difficult to ensure flatness at the site where the through vias are formed.

上記の課題に対し、本実施例の高周波モジュールはキャビティの底面が金属ベースプレート８となる構造の為、ＭＭＩＣ２を実装する面の平坦度を確保しつつ、更に、セラミック基板に比べて、熱伝導性の良い金属上に実装されるので、ＭＭＩＣ２の放熱性が向上する。   In response to the above problems, the high-frequency module of the present embodiment has a structure in which the bottom surface of the cavity is the metal base plate 8. Therefore, the heat dissipation of the MMIC 2 is improved.

従って、本実施例の高周波モジュールとすることで、ＭＭＩＣ２の実装ばらつきによる特性ばらつきを低減しつつＭＭＩＣ２の放熱性の良い実装構造とすることが可能となるので、精度の良い高周波モジュールを提供できる。   Therefore, by using the high-frequency module of the present embodiment, it is possible to provide a mounting structure with good heat dissipation of the MMIC 2 while reducing the characteristic variation due to the mounting variation of the MMIC 2, and thus it is possible to provide an accurate high-frequency module.

実施例３の高周波モジュールを図５により説明する。   The high-frequency module of Example 3 will be described with reference to FIG.

実施例３は実施例２に対し、カバー７に周期的な突起を付加したカバーを適用した点が相違点である。   The third embodiment is different from the second embodiment in that a cover in which periodic protrusions are added to the cover 7 is applied.

複数のＭＭＩＣ２を同じ空間のパッケージ内に実装した場合、図５の矢印の如く、それぞれのチップが放射する電波がその空間内を伝播し、干渉することが懸念される。特に、受信用ＭＭＩＣが不要な電波を受信してしまうと、ノイズとなって出力されるため、高周波モジュールの精度に直接影響を及ぼすことになる。これを対策する手段の一つとして、使用する高周波の波長により決定される周期にて周期的な突起７０を形成することで、パッケージ空間内の電波の伝播を遮断するフィルター効果があることが公知である。   When a plurality of MMICs 2 are mounted in a package in the same space, there is a concern that radio waves radiated from the respective chips propagate in the space and interfere as indicated by arrows in FIG. In particular, if the receiving MMIC receives an unnecessary radio wave, it is output as noise, which directly affects the accuracy of the high-frequency module. As one means for solving this problem, it is known that a periodic projection 70 is formed at a period determined by the high-frequency wavelength to be used, thereby providing a filter effect that blocks the propagation of radio waves in the package space. It is.

しかし、使用する周波数が高いほど波長が短くなるため、上記の突起７０の周期も短くなり、精度も要求される。更に、ＭＭＩＣ２から突起７０までの距離ｈも前述のフィルター効果に影響するため、カバー７を精度良く製作することと、それを精度良く実装することが望まれる。   However, the higher the frequency used, the shorter the wavelength, so the period of the projection 70 is also shortened, and accuracy is required. Furthermore, since the distance h from the MMIC 2 to the protrusion 70 also affects the above-described filter effect, it is desired to manufacture the cover 7 with high accuracy and mount it with high accuracy.

実施例２の高周波モジュールでは、カバー７を金属の平板を用いたが、このカバー７に単純なプレス加工で周期的な突起７０を設けたものが本実施例の高周波モジュールに適用しているカバー７である。カバー７の加工工程が単純なゆえ、突起７０の寸法精度も安定して製作できる。又、カバー７を実装した際の、ＭＭＩＣ２から突起７０までの距離ｈについては、前述のようにパッケージの外周枠を高周波回路基板１により形成しているので、金属の別部材で形成した外周枠を製作して実装する場合と比べて実装ばらつきが少ないため距離ｈのばらつきも抑えられ、安定したフィルター効果を発揮できる。   In the high frequency module of the second embodiment, a metal flat plate is used as the cover 7, but a cover provided with periodic protrusions 70 by simple pressing is applied to the high frequency module of the present embodiment. 7. Since the processing process of the cover 7 is simple, the dimensional accuracy of the projection 70 can be stably manufactured. As for the distance h from the MMIC 2 to the protrusion 70 when the cover 7 is mounted, the outer peripheral frame of the package is formed by the high-frequency circuit board 1 as described above. Since there is less mounting variation compared to the case of manufacturing and mounting, variation in the distance h can be suppressed, and a stable filter effect can be exhibited.

従って、実施例２の効果に加え、精度の良い高周波モジュールを提供できる。   Therefore, in addition to the effects of the second embodiment, a high-frequency module with high accuracy can be provided.

実施例４の送受信装置を図６により説明する。   A transmission / reception apparatus according to the fourth embodiment will be described with reference to FIG.

本実施例の送受信装置は、高周波信号を送受信するためのアンテナ８０と高周波信号を発生，処理するための高周波モジュール１００と高周波モジュール１００の駆動，制御並びに信号処理を行うための制御回路基板１１０と、これらをパッケージするための筐体ケース１２０、及び、外部との高周波信号の送受信を妨げずに高周波モジュール１００をパッケージするためのレドーム１３０とから構成される。   The transmission / reception apparatus of this embodiment includes an antenna 80 for transmitting and receiving a high-frequency signal, a high-frequency module 100 for generating and processing a high-frequency signal, a control circuit board 110 for driving, controlling, and signal processing the high-frequency module 100, The housing case 120 for packaging these components and the radome 130 for packaging the high-frequency module 100 without interfering with transmission / reception of high-frequency signals with the outside.

この送受信装置は例えば、アンテナ８０から送信された電波がターゲットから反射され、その反射波を受信し、受信した信号を制御回路基板１１０で処理，出力することで、周囲の状況をセンシングする機能を有した、自動車の安全制御に用いられるレーダ装置などに適用されるものである。   For example, the transmission / reception apparatus has a function of sensing surrounding conditions by reflecting a radio wave transmitted from the antenna 80 from a target, receiving the reflected wave, and processing and outputting the received signal by the control circuit board 110. The present invention is applied to a radar device used for automobile safety control.

ここにおいて、本実施例の送受信装置は、実施例１から実施例３に記載の高周波モジュール１００を搭載したものである。従って、実施例１から実施例３で記載した効果により、安価で高精度の送受信装置を提供することが可能となる。   Here, the transmission / reception apparatus according to the present embodiment includes the high-frequency module 100 described in the first to third embodiments. Therefore, the effects described in the first to third embodiments can provide an inexpensive and highly accurate transmission / reception device.

実施例１の高周波モジュールを示す展開図。FIG. 3 is a development view illustrating the high-frequency module according to the first embodiment. 実施例１の高周波モジュールを示す構造図。1 is a structural diagram showing a high-frequency module according to Embodiment 1. FIG. 実施例１の高周波モジュール。The high frequency module of Example 1. FIG. 実施例２の高周波モジュール。2 shows a high-frequency module according to a second embodiment. 実施例３の高周波モジュール。6 shows a high-frequency module according to a third embodiment. 実施例４の送受信装置。The transmission / reception apparatus of Example 4. FIG.

符号の説明Explanation of symbols

１ 高周波回路基板
２ ＭＭＩＣ
３ 高周波伝送線路
４ 入出力端子
５ 第２のキャビティ
６ 第１のキャビティ
７ カバー
８ 金属ベースプレート
１０ ボンディングワイヤ
２１ バイアス配線端子
４０ 金属ロー材Ａ
４１ 接着剤
４２ 金属ロー材Ｂ
５０ 導波路
５１ 給電ポート
６０ ポートＢ
６１ ポートＡ
６２ 基板内層線路
７０ 突起
８０ アンテナ
１００ 高周波モジュール
１１０ 制御回路基板
１２０ 筐体ケース
１３０ レドーム 1 High-frequency circuit board 2 MMIC
3 High Frequency Transmission Line 4 Input / Output Terminal 5 Second Cavity 6 First Cavity 7 Cover 8 Metal Base Plate
10 Bonding wire 21 Bias wiring terminal 40 Metal brazing material A
41 Adhesive 42 Metal brazing material B
50 Waveguide 51 Feed port 60 Port B
61 Port A
62 substrate inner layer line 70 protrusion 80 antenna 100 high frequency module 110 control circuit board 120 housing case 130 radome

Claims (4)

高周波信号を伝送するための高周波伝送線路と高周波ＩＣを駆動するための配線パターンを有し、セラミック基板を積層してなる回路基板と、前記回路基板と電気的に接続した前記高周波ＩＣと、前記回路基板を保持するための金属プレートと、前記高周波ＩＣをパッケージするためのカバーを有する高周波モジュールにおいて、
前記回路基板は、第１のキャビティと前記第１のキャビティの外周を囲む第２のキャビティを有し、前記第１のキャビティ内に前記高周波ＩＣが実装され、前記第２のキャビティの外周でカバーが接合される、高周波モジュール。 A circuit board having a high-frequency transmission line for transmitting a high-frequency signal and a wiring pattern for driving a high-frequency IC, and a ceramic substrate laminated thereon; the high-frequency IC electrically connected to the circuit board; In a high-frequency module having a metal plate for holding a circuit board and a cover for packaging the high-frequency IC,
The circuit board has a first cavity and a second cavity surrounding the outer periphery of the first cavity, the high frequency IC is mounted in the first cavity, and the outer periphery of the second cavity covers the circuit board. The high frequency module to be joined. 高周波信号を伝送するための高周波伝送線路と高周波ＩＣを駆動するための配線パターンを有し、セラミック基板を積層してなる回路基板と、前記回路基板と電気的に接続した前記高周波ＩＣと、前記回路基板を保持するための金属プレートと、前記高周波ＩＣをパッケージするためのカバーを有する高周波モジュールにおいて、
前記回路基板は、表裏を貫通する第１のキャビティと前記第１のキャビティの外周を囲みかつ表裏が貫通しない第２のキャビティを有し、前記金属プレートと接合され、前記第１のキャビティ内でかつ前記金属プレート上に前記高周波ＩＣが実装される、高周波モジュール。 A circuit board having a high-frequency transmission line for transmitting a high-frequency signal and a wiring pattern for driving a high-frequency IC, and a ceramic substrate laminated thereon; the high-frequency IC electrically connected to the circuit board; In a high-frequency module having a metal plate for holding a circuit board and a cover for packaging the high-frequency IC,
The circuit board has a first cavity that penetrates the front and back sides and a second cavity that surrounds the outer periphery of the first cavity and does not penetrate the front and back sides, and is joined to the metal plate, A high frequency module in which the high frequency IC is mounted on the metal plate. 高周波信号を伝送するための高周波伝送線路と高周波ＩＣを駆動するための配線パターンを有し、セラミック基板を積層してなる回路基板と、前記回路基板と電気的に接続した前記高周波ＩＣと、前記回路基板を保持するための金属プレートと、前記高周波ＩＣをパッケージするためのカバーを有する高周波モジュールにおいて、
前記カバーにパッケージ内の電波を遮断するための周期的な突起が設けられ、
前記回路基板は、表裏を貫通する第１のキャビティと前記第１のキャビティの外周を囲む第２のキャビティを有し、前記金属プレートと接合され、前記第１のキャビティ内に前記高周波ＩＣを実装し、前記第２のキャビティには高周波伝送線路が形成され、前記回路基板の表層面でカバーが接続される、高周波モジュール。 A circuit board having a high-frequency transmission line for transmitting a high-frequency signal and a wiring pattern for driving a high-frequency IC, and a ceramic substrate laminated thereon; the high-frequency IC electrically connected to the circuit board; In a high-frequency module having a metal plate for holding a circuit board and a cover for packaging the high-frequency IC,
Periodic protrusions for blocking radio waves in the package are provided on the cover,
The circuit board has a first cavity penetrating front and back and a second cavity surrounding the outer periphery of the first cavity, and is joined to the metal plate, and the high-frequency IC is mounted in the first cavity. In the high-frequency module, a high-frequency transmission line is formed in the second cavity, and a cover is connected to the surface layer of the circuit board. 請求項１乃至３何れか一に記載の高周波モジュールと、
高周波信号を送受信するためのアンテナと、
高周波モジュールを制御するための制御回路を備える、送受信装置。 A high-frequency module according to any one of claims 1 to 3,
An antenna for transmitting and receiving high-frequency signals;
A transmission / reception device comprising a control circuit for controlling a high-frequency module.
JP2008263370A 2008-10-10 2008-10-10 High-frequency module and transmitting/receiving apparatus Pending JP2010093146A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014107568A (en) * 2012-11-23 2014-06-09 Schott Ag Housing component, specifically for electronics housing
CN103904396A (en) * 2014-03-14 2014-07-02 中国电子科技集团公司第十三研究所 Millimeter wave chip gas tightness packaging structure based on SIW
KR101434114B1 (en) 2013-09-27 2014-08-26 주식회사 에이스테크놀로지 Transmitting/receiving circuit module
JP7382856B2 (en) 2020-03-05 2023-11-17 三菱電機株式会社 package structure

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014107568A (en) * 2012-11-23 2014-06-09 Schott Ag Housing component, specifically for electronics housing
US9585268B2 (en) 2012-11-23 2017-02-28 Schott Ag Housing component
KR101434114B1 (en) 2013-09-27 2014-08-26 주식회사 에이스테크놀로지 Transmitting/receiving circuit module
CN103904396A (en) * 2014-03-14 2014-07-02 中国电子科技集团公司第十三研究所 Millimeter wave chip gas tightness packaging structure based on SIW
JP7382856B2 (en) 2020-03-05 2023-11-17 三菱電機株式会社 package structure

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