JP2010093013A - Bonding apparatus and bonding method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a bonding apparatus and a bonding method, which can achieve high connection reliability while reducing a bonding time in bonding a chip component in which bumps are formed. <P>SOLUTION: The bonding apparatus includes: a low temperature head 210 heated at a first temperature; a high temperature head 220 heated at a second temperature; a first heating and pressing means for bringing a chip 50 into contact with a circuit board 30 coated with an adhesive 20 and pressing the chip by the low temperature head; and a second heating and pressing means for switching from the low temperature head to the high temperature head while pressing by the first heating and pressing means is kept and pressing the chip by the high temperature head. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to bonding of chip parts having bumps formed thereon, and more particularly to a bonding apparatus and bonding method capable of obtaining high connection reliability while shortening the bonding time.

  A flip chip mounting method is frequently used for information devices and the like that are required to be small, thin, and highly functional. This method directly connects the metal bumps formed on the chip and the electrode pads formed on the circuit board. The mounting area can be reduced, and the loss due to the electrical resistance and inductance of the wiring can be reduced. ing.

  As a specific bonding method of the flip chip, a thermocompression bonding method and a metal eutectic bonding method are known.

  In the thermocompression bonding method, an adhesive is applied to the electrode pads of the circuit board, the metal bumps of the chip are aligned with the electrode pads, the chip is pressed against the circuit board, and the adhesive is cured using heat or light. It is a method. The electrode pad and the metal bump are electrically joined by pressure welding.

  The metal eutectic bonding method is a method in which an adhesive is applied to an electrode pad, a metal bump formed by solder is aligned with the electrode pad, the solder is melted by heat or light, and the adhesive is cured. Electrical bonding is obtained by a metal eutectic formed by melting the solder. The adhesive is filled between the circuit board and the bottom surface of the chip after electrical bonding by metal eutectic.

  The above-described thermocompression bonding method will be described in more detail with reference to FIGS.

  FIG. 11 shows a method in which the head is changed to two different temperatures and the chip is pressed and bonded (herein referred to as a step bonding method), and bonding is performed by the following method.

  First, the adhesive 20 is dropped on the electrode pad 31 (not shown) of the circuit board 30 by the dispenser 10. When a plurality of chips are mounted, the adhesive 20 is dropped on the plurality of electrode pads 31 (FIG. 11A).

  Next, the head 40 picks up a chip to be mounted first from the chip 50 mounted on a chip mounting table (not shown) and adsorbs the back surface (the back surface when the metal bump 51 is the front surface) while adsorbing the adhesive 20. Is transferred onto the electrode pad 31 to which is applied. At this position, the bumps 51 of the chip 50 and the electrode pads 31 are aligned (FIG. 11B). After the alignment, the head 40 is lowered and the chip 50 is pressed from above with a predetermined load (FIG. 11C).

  The head 40 includes a heater inside and heats the chip 50 with a predetermined temperature profile while pressing the chip 50. The adhesive 20 filled in the gap between the metal bump 51 and the electrode pad 31 is cured by this heating and pressing. At the end of the heating and pressing, the curing of the adhesive 20 is completed with the metal bump 51 and the electrode pad 31 being in pressure contact with each other. After heating and pressing, the head 40 is raised and the head 40 and the chip 50 are cooled (FIGS. 11D to 11F).

  After the head 40 is cooled, the head 40 again picks up a chip to be bonded next from a plurality of mounted chips from the mounting table, and performs bonding.

  FIG. 12 shows a temperature profile T and a load profile P during bonding. FIG. 12 shows an example in which two chips are bonded. The first chip is bonded at t1, and the second chip is bonded at t3 after the head cooling time of t2. . At the start time of t1, pressing is performed with the load P1 and the temperature is increased so that the temperature T1 and T2 are maintained at a constant temperature. As the temperature rises from the start of t1, the viscosity of the adhesive 20 decreases, the adhesive 20 penetrates into the gap between the metal bump 51 and the electrode pad 31, and the air contained in the adhesive 20 is released. The purpose of maintaining the temperature at T1 for a predetermined time is to allow the adhesive 20 to sufficiently penetrate and release air. Curing of the adhesive 20 starts due to the temperature rise following T1, and the curing is completed when the adhesive 20 is held at the temperature T2 for a predetermined time. At that time, bonding is terminated, the heater of the head 40 is cut, and at the same time, the head 40 is raised to release the pressure. The temperature of the raised head 40 gradually decreases, and when the head 40 returns to a substantially original temperature, bonding is performed to the second chip. Therefore, the bonding time in the step bonding method is “t1 + t2.”

  As shown in FIG. 12, since the step bonding method requires time for cooling the head 40, there is a problem in the throughput of the bonding process, and a method in which the bonding process is divided into two processes is conceivable. That is, bonding is performed by the low temperature head 41 to temporarily cure the adhesive 20, and in the next step, bonding is performed by the high temperature head 42 to perform the main curing of the adhesive 20 (herein referred to as a process separation method). ). FIG. 13 is a diagram for explaining this process separation method. 13 that are the same as those in FIG. 11 have the same reference numerals.

  FIGS. 13A to 13C are substantially the same as FIGS. 11A to 11C. That is, the adhesive 20 is dropped on the electrode pad 31 (not shown) of the circuit board 30 by the dispenser 10, and the chip 50 is adsorbed by the low-temperature head 41 having a predetermined temperature and conveyed onto the electrode pad 31. Then, the head 41 is lowered and pressed after alignment. By pressing the low-temperature head 41 for a predetermined time, the adhesive 20 progresses through the gap between the metal bump 51 and the electrode pad 31, the release of air contained in the adhesive 20, and a certain degree of curing to become a semi-cured state. Like that. The chip 50 is temporarily fixed (temporarily fixed) to the electrode pad 31 by the semi-curing of the adhesive 20.

  After pressing the low temperature head 41 for a predetermined time, the low temperature head 41 is raised to release the press. The circuit board 30 to which the chip 50 is temporarily fixed is conveyed to the next process, and the chip 50 is pressed by the high temperature head 42 for a predetermined time. The high temperature head 42 fully cures the adhesive 20 in a semi-cured state. After the curing of the adhesive 20 is completed, the high temperature head 42 is raised to release the heating press. (FIGS. 13D to 13H).

  FIG. 14 shows a temperature profile and a load profile of the process separation method. As shown in FIG. 14, the chip 50 is pressed at the temperature T′1 and the load P1 by the low temperature head 41 at the time t′1, and the temperature and the load are released at the time t′2 during the conveyance. Then, at time t'3, the chip 50 is pressed by the high temperature head 42 at the temperature T'2 and the load P1.

  In the process separation method, the head is used for low temperature and high temperature, so that the time for cooling the head is not required unlike the step bonding method, but the transport time to the next process is required.

  As a specific method of metal eutectic bonding method different from thermocompression bonding method, a heated weight is placed on a semiconductor element to deform a solder bump, and then a near infrared gland irradiation device A technique for melting the solder bumps by irradiating the infrared glands by the above method is known (Patent Document 1).

In addition to the above-mentioned thermocompression bonding method and metal eutectic bonding method, there are known ultrasonic bonding methods and methods using anisotropic conductive materials (Patent Document 2).
Japanese Patent Laid-Open No. 11-260859 JP 2005-86145 A

  As described above, the step bonding method in the thermocompression bonding method requires a time for cooling the head, and there is a problem that the production efficiency is poor. For example, the bonding time in the step bonding method requires 20 to 30 seconds (including the head cooling time of 10 to 20 seconds), and the ratio of the head cooling time is large.

  The process separation method for improving this problem requires some time for conveyance, but can eliminate the need for cooling the head, and the bonding time is greatly improved. However, there is a problem that the temporary fixing of the chip 50 may come off during the conveyance to be sent to the next process, and the connection reliability is lowered.

  In view of the above problems, an object of the present invention is to provide a bonding apparatus and a bonding method with high connection reliability while performing bonding for a short time.

  The bonding apparatus according to the present invention includes a low-temperature head, a high-temperature head, first heating and pressing means, and second heating and pressing means.

  The low temperature head is heated to a first temperature and the high temperature head is heated to a second temperature. The first heating and pressing means makes the metal bump formed on the chip abut on the electrode pad of the circuit board to which the adhesive is applied, and presses the chip with the low-temperature head. The second heating and pressing means switches from the low-temperature head to the high-temperature head while maintaining the pressing by the first heating and pressing means, and presses with the high-temperature head.

  That is, the chip is heated and pressed with a low temperature head, and the adhesive is cured by heating and pressing with a high temperature head without releasing the pressing. Heat pressing with a low-temperature head does not cause voids in the adhesive, and the adhesive sufficiently penetrates into the gap between the electrode pad of the circuit board and the metal bump of the chip. I do.

  In the present invention, since the heads heated to different temperatures are switched and used, it is unnecessary to cool the head temperature, and the bonding time can be shortened. Further, since the head is switched while pressing the chip, the adhesive is cured without moving the aligned chip, so that bonding with high connection reliability can be obtained.

Embodiments 1 to 4 of the bonding method and the bonding apparatus of the present invention will be described with reference to FIGS.
(Embodiment 1)
Embodiment 1 is an example in which a low temperature head and a high temperature head are moved up and down on the same axis and heated and pressed, and will be described with reference to FIGS.

  FIG. 1 shows an outline of the bonding method according to the first embodiment. The low-temperature head 210 and the high-temperature head 220 are each provided with a heater and heated to their respective set temperatures. The low-temperature head 210 has a hollow structure in order to vacuum-suck the chip 50 at the tip.

  FIG. 1A shows an electrode pad 31 formed on a circuit board 30 by vacuum-sucking a chip 50 on which a low-temperature head 210 is placed on a chip mounting table (not shown) with metal bumps 51 facing downward from the back surface. A state in which the chip 50 has been conveyed is shown. An adhesive 20 is applied to the electrode pad 31, and the electrode pad 31 and the metal bump 51 of the chip 50 are aligned at the head position of the low-temperature head 210. The alignment is performed by a conventional technique using, for example, an infrared camera.

  After the alignment is completed, the low-temperature head 210 is lowered and the chip 50 is heated and pressed. The adhesive 20 on the electrode pad 31 spreads in the gap between the electrode pad 31 and the metal bump 51 by the downward pressing of the chip 50. Further, the heating temperature of the low-temperature head 210 is transferred to the adhesive 20 through the chip 50, and the viscosity of the adhesive 20 is lowered to penetrate and fill the gap between the electrode pad 31 and the metal bump 51 (FIG. 1B). )).

  The high temperature head 220 is lowered after a predetermined time. The central portion of the high temperature head 220 forms an opening penetrating vertically, and the low temperature head 210 is lowered while passing through the opening to reach the chip 50. The high temperature head 220 reaches the chip 50 and presses it, and at the same time, the vacuum suction is cut and the low temperature head 210 is raised. That is, the chip 50 is switched from the low temperature head 210 to the high temperature head 220 while being pressed. The chip 50 is heated and pressed by the switched high-temperature head 220. The adhesive 20 is transferred by the heat of the high-temperature head 220 through the chip 50, and the curing proceeds (FIG. 1 (c), FIG. 1 (d)).

  After the heating and pressing of the high temperature head 220 for a predetermined time, the high temperature head 220 is raised to release the heating press on the chip 50. The high temperature head 220 moves up while passing the low temperature head 210 through the opening, and stops at a predetermined position. The metal bumps 51 of the chip 50 are fixed by the adhesive 20 in a state where they are pressed against the electrode pads 31 (FIG. 1E).

  As shown in FIGS. 1A to 1E, since the two heads of the low temperature head 210 and the high temperature head 220 are used, it is not necessary to cool the head as in the step bonding method. Further, since the chip 50 is switched from the low-temperature head 210 to the high-temperature head 220 in a pressed state, the metal bumps 51 temporarily fixed during the transfer for switching the heads are not detached from the electrode pads 31 as in the process separation method. A reliable connection is obtained.

  FIG. 2 is a configuration example of a bonding apparatus that performs the bonding shown in FIG. The bonding apparatus 100 includes a bonder unit 200 and a control unit 300.

  The bonder unit 200 includes a low-temperature head 210, a high-temperature head 220, a dispenser 230, an XY table 240, cylinders 211 and 221 that press the low-temperature head 210 and the high-temperature head 220 up and down with a predetermined load, and a cylinder that moves the dispenser 230 up and down. (A chip mounting table on which the chip 50 is mounted is not shown).

  As described with reference to FIG. 1, the low-temperature head 210 and the high-temperature head 220 are heated at their respective set temperatures, and the high-temperature head 220 has an opening at the center and moves up and down through the low-temperature head 210.

  The dispenser 230 is lowered by the cylinder 231 and applies the adhesive 20 on the electrode pads 31 of the circuit board 30 in cooperation with the XY table 240. After application of the adhesive 20, the cylinder 231 is raised to stop at a predetermined position and wait.

  The XY table 240 aligns the chip 50 and the circuit board 30 in cooperation with, for example, an infrared camera (not shown) in addition to the application of the adhesive 20 described above.

  The control unit 300 controls each component of the bonder unit 200. The CPU (Central Processor Unit) 310 that performs overall control, the main memory 320 that executes the bonding program 330, and each component of the bonder unit 200 are controlled. A control unit group (low temperature head control unit 340, high temperature head control unit 350, dispenser control unit 360, XY table control unit 370) and a bonding data storage unit 380 that control by outputting control signals.

  The bonding data storage unit 380 stores data such as the dimensions and positions of the electrode pads 31 extracted from the CAD data and the order and dimensions of the chips 50 to be mounted.

  Next, the processing flow of the bonding program 330 will be described with reference to FIG. In FIG. 3, first, the adhesive 20 is applied to the portion of the electrode pad 31 on the circuit board 30. Application of the adhesive 20 takes out data of the electrode pad 31 from the bonding data storage unit 380, and dispenser control unit according to an application pattern corresponding to the electrode pad 31 (previously stored in the bonding data storage unit 380). The adhesive 20 is applied onto the electrode pad 31 via the 360 and the XY table control unit 370. If a plurality of chips 50 are bonded on the circuit board 30, a plurality of coatings are performed (S100).

  After the application of the adhesive 20 is completed, the low-temperature head 210 is moved to the chip mounting table, and the back surface of the first chip 50 is vacuum-sucked. And it moves to the electrode pad 31 of the bonding position with respect to the 1st chip | tip 50, the metal bump 51 is aligned with the electrode pad 31, the low-temperature head 210 is lowered | hung, and the chip | tip 50 is mounted on the electrode pad 31 ( S110, S120).

  The chip 50 is pressed from above by a low temperature head 210 for a predetermined time. During this time, the adhesive 20 fills the space between the metal bumps 51 and the electrode pads 31 and releases air in the adhesive 20 (S130, S140).

  After pressing for a predetermined time, the high-temperature head 220 is lowered, and when the high-temperature head 220 reaches the chip 50, empty suction of the cryogenic head 210 is cut and the low-temperature head 210 is raised. The high-temperature head 220 presses the chip 50 as it is (while being lowered). The adhesive 20 is cured by the heat of the high-temperature head 220 (S150-S170).

  After heating and pressing for a predetermined time by the high temperature head 220, the high temperature head 220 is raised and the chip 50 is released from the heating and pressing (S180).

  Bonding to the first chip 50 is finished, and the same processing is performed on the second chip from S110. Finish bonding all chips.

  An example of the temperature profile and load profile of the present invention is shown in FIG. FIG. 4 is drawn corresponding to FIG. 12 or FIG. 14. The temperature profile T (solid line) indicates the temperature applied to the chip 50 by the low temperature head 210 and the high temperature head 220, and the load profile P (dotted line) indicates the low temperature head 210. The load applied to the chip 50 by pressing with the high-temperature head 220 is shown with respect to the elapsed time. Time t ″ 1 is the bonding time by the low temperature head 210, and time t ″ 2 is the bonding time by the high temperature head 220.

  The temperature profile T indicates that the temperature T ″ 1 is applied at the low temperature head 210 during the time t ″ 1, and then the temperature T ″ 2 is applied at the high temperature head 220 during the time t ″ 2. . Although the heating temperature of the head depends on the characteristics of the adhesive 20, T ″ 1 is, for example, 100 to 180 ° C., and T ″ 2 is 200 to 250 ° C.

  The load profile P is P1 during the time t ″ 1, and the load increases to P2 for a short time when the low temperature head 210 and the high temperature head 220 are switched at the beginning of the time t ″ 2, but after the release of the low temperature head 210, the load profile P becomes P1 again. It shows that it is pushed back. The load of P1 is several tens g / bump.

  The bonding time is, for example, t ″ 1 for several seconds, t ″ 2 is about 10 seconds, and “t ″ 1 + t ″ 2” is bonding time (tens of seconds). Compared with the bonding time of the prior art described above, the cooling time of the head and the transport time to the next process are not required, so that the bonding time can be shortened.

Further, since the switching from the low temperature head 210 to the high temperature head 220 is performed while pressing, the metal bump 51 does not come off from the electrode pad 31 at the time of switching, and a highly reliable connection is obtained.
(Embodiment 2)
The second embodiment is an example in which the low-temperature head and the high-temperature head are alternately heated and pressed from the left and right, and an outline of the bonding method will be described with reference to FIGS. In FIGS. 5 and 6, a diagram viewed from the side and a diagram viewed from above are described as one set for each process.

  Also in the second embodiment, the low-temperature head 500 and the high-temperature head 510 are each provided with a heater in the same manner as in the first embodiment, and each is heated to a set temperature. As shown in FIG. 5A, the low-temperature head 500 is L-shaped when viewed from the side, and has a hollow structure for vacuum suction of the chip 50. FIG. 5A shows a state in which the low-temperature head 500 vacuum-sucks the chip 50 from the back surface with the metal bump 51 facing downward, and the chip 50 is conveyed onto the electrode pad 31. An adhesive 20 is applied to electrode pads 31 (not shown) on the circuit board 30, and the electrode pads 31 and the metal bumps 51 of the chip 50 are aligned at the position of the low-temperature head 500.

  When the alignment is completed, the low-temperature head 500 is lowered and the chip 50 is pressed. FIG. 5B shows a state where the low-temperature head 500 heats and presses the chip 50. A high temperature head 510 described below is in a standby state at the position shown in the figure. As shown in FIG. 5B, the high-temperature head 510 has an L-shaped side surface, and a “U” -shaped concave portion penetrating vertically in accordance with the shape of the head portion of the low-temperature head 500 is formed at the center of the head. Forming.

  After performing the heating and pressing for a predetermined time with the low temperature head 500, the high temperature head 510 moves right above the low temperature head 500, and then descends while passing the low temperature head 500 through the recess of the high temperature head 510. FIG. 6C shows a state in which the high temperature head 510 is lowered through the low temperature head 500 and reaches the chip 50.

  At the same time that the high temperature head 510 reaches the chip 50, the low temperature head 500 moves up. The low-temperature head 500 moves up through the recess of the high-temperature head 510 and moves to a predetermined standby position (for example, an upper position of a chip mounting table (not shown)). The high temperature head 510 heats and presses the chip 50 to cure the adhesive 20. When the heating and pressing for a predetermined time is completed, the high temperature head 510 is raised to release the heating and pressing to the chip 50 and move to a predetermined position. FIG. 6D shows a state where the low temperature head 500 is raised and the high temperature head 510 is heated and pressed by the chip 50.

  Since the configuration of the bonding apparatus and the processing flow thereof are the same as those in the first embodiment, description thereof will be omitted.

In the second embodiment as well, the low-temperature head 610 can be switched to the high-temperature head 620 while pressing the chip 50, so that the bonding time can be shortened and the reliability can be improved.
(Embodiment 3)
In Embodiments 1 and 2, the low-temperature head picks up the chip 50 from the chip mounting table, picks it up, moves it to the electrode pad, aligns it, and then heats and presses it. This is an example in which the pickup head to the position alignment are performed by a suction head, and the low temperature head is a mechanism that performs only heat pressing. Embodiment 3 will be described with reference to FIG. 7 and FIG. 8, and similarly to Embodiment 2, a view seen from the side and a view seen from above are described as one set for each process.

  Also in the third embodiment, the low-temperature head 610 and the high-temperature head 620 are each provided with a heater and heated to a set temperature. The low-temperature head 610 forms a recess in the center of the head in accordance with the shape of the suction head 600, and the high-temperature head 620 has the same shape as that of the second embodiment.

  FIG. 7A shows a state in which the suction head 600 vacuum-sucks the chip 50 from the back surface with the metal bump 51 facing downward and transports the chip 50 onto the electrode pad 31. An adhesive 20 is applied to electrode pads 31 (not shown) on the circuit board 30, and the electrode pads 31 and the metal bumps 51 of the chip 50 are aligned at the position of the suction head 600. The low temperature head 610 is in a standby state.

  When the alignment is finished, the suction head 600 is lowered and the metal bump 51 is brought into contact with the electrode pad 31. Subsequently, the low-temperature head 610 is moved from the left side, and after the suction head 600 enters the concave portion of the low-temperature head 610, the head is lowered and the chip 50 is pressed. By this pressing, the heat of the low temperature head 610 is transferred through the chip 50. The high-temperature head 620 is in a standby state (FIG. 7B).

  After performing the heating and pressing for a predetermined time with the low temperature head 610, the high temperature head 620 moves right above the low temperature head 610 and then descends while passing the low temperature head 610 through the recess of the high temperature head 620. FIG. 8C shows a state in which the high temperature head 620 descends through the low temperature head 610 and reaches the chip 50.

  At the same time that the high temperature head 620 reaches the chip 50, the low temperature head 610 cuts the vacuum suction and moves up. Similar to the second embodiment, the low temperature head 610 moves up through the concave portion of the high temperature head 510 and moves to a predetermined standby position. The high temperature head 620 heats and presses the chip 50 to cure the adhesive 20, and moves to the standby position when the heating and pressing for a predetermined time is completed. FIG. 8D shows a state where the low temperature head 610 is raised and the high temperature head 620 is heated and pressed by the chip 50.

  Since the configuration of the bonding apparatus and the processing flow thereof are the same as those in the first embodiment, description thereof will be omitted.

  In the third embodiment, since the suction head 600 for picking up and aligning the chip 50 is provided exclusively, the low-temperature head 610 can only be heated and pressed, and the number of components as a bonding apparatus increases, but it is functionally simple. become.

In the third embodiment as well, the low-temperature head 610 can be switched to the high-temperature head 620 while pressing the chip 50, thereby shortening the bonding time and increasing the reliability.
(Embodiment 4)
In Embodiments 1 to 3, heating and pressing with respect to the chip 50 are performed by a low-temperature head and a high-temperature head. In Embodiment 4, pressure is applied by a weight and a low-temperature head (or a high-temperature head). This is an example of pressing only with a weight when the head is switched. This will be described with reference to FIGS. 9 and 10.

  As shown in FIG. 9, the weight 700 has a structure that can be connected to the low temperature head 710 and the high temperature head 720, and forms a through hole that vacuum-adsorbs the chip at the center. The low-temperature head 710 also has a through hole at the center, and when connected to the weight 700, both the through holes are continuous and the chip can be vacuum-sucked. The low-temperature head 710 and the high-temperature head 720 include heaters inside as in the first to third embodiments, and are each heated to a set temperature.

  FIG. 9A shows a state in which the low-temperature head 710 is connected to the weight 700, the chip 50 is vacuum-sucked from the back surface with the metal bumps 51 facing downward, and the chip 50 is conveyed onto the electrode pad 31. (In the state where the chip 50 is sucked, the low-temperature head 710, the weight 700, and the chip 50 are arranged in this order from the top). Further, an adhesive 20 is applied to an electrode pad 31 (not shown) on the circuit board 30, and the low-temperature head 710 and the weight 700 connected at this position align the chip 50 and the circuit board 30 that are attracted to each other. I do.

  When the alignment is completed, the connected low-temperature head 710 and weight 700 are lowered and the chip 50 is pressed. By this pressing, the heat of the low-temperature head 710 is transferred through the chip 50 (FIG. 9B).

  After pressing for a predetermined time, the vacuum suction is cut and the low-temperature head 710 is raised. As the low-temperature head 710 is raised, the pressure on the chip 50 becomes a load of only the weight 700 (FIG. 9C).

  Subsequently, the high temperature head 720 is moved onto the weight 700 and lowered to be connected to the weight 700. At this time, the chip 50 is pressed by the weight 700 and the high-temperature head 720. At the same time, the heat of the high-temperature head 720 is transmitted through the weight 700 and the chip 50, and the adhesive 20 is cured (FIGS. 9D and 9E).

  After being heated and pressed by the high temperature head 720 and the weight 700 for a predetermined time, the high temperature head 720 and the weight 700 are lifted in a connected state. Thereby, the chip | tip 50 was released from heating and press (FIG.9 (f)).

  In a state where the high temperature head 720 and the weight 700 are connected, the head moves to the weight cooling table, and the connection of the high temperature head 720 is disconnected from the weight 700 (FIGS. 10 (g) and 10 (h)).

  The weight 700 is cooled by a weight cooling stand, and the low temperature head 710 is connected to the weight 700 after a predetermined time. Thereafter, the low-temperature head 710 and the weight 700 are connected to each other to move to the chip mounting base for bonding of the next chip 50 (FIGS. 10 (i) to 10 (k)).

  Although the weight 700 is cooled in FIG. 10I, for example, a plurality of weights 700 may be prepared. By doing so, the weight cooling time can be eliminated by using the weights 700 in order.

  In Embodiment 4 as well, the low-temperature head 710 can be switched to the high-temperature head 720 while pressing the chip 50, which can shorten the bonding time and increase the reliability.

  The embodiments of the present invention have been described above. In the embodiment, the example of the thermocompression bonding method has been described. However, the embodiment can also be applied to a metal eutectic bonding method. Further, the present invention can be applied to a chip component in which a metal bump is formed in addition to a semiconductor flip chip.

It is an example of the bonding method of this invention (embodiment 1). It is a structural example (embodiment 1) of the bonding apparatus of this invention. It is a processing flow example (embodiment 1) of the bonding apparatus of the present invention. It is a profile example (embodiment 1) of the bonding apparatus of this invention. It is an example of the bonding method of this invention (embodiment 2). It is an example of the bonding method of this invention (embodiment 2). It is an example of the bonding method of this invention (embodiment 3). It is an example of the bonding method of this invention (embodiment 3). It is an example of the bonding method of this invention (embodiment 4). It is an example of the bonding method of this invention (embodiment 4). It is a conventional bonding method example (part 1). It is the profile example (the 1) of the conventional bonding method. It is a conventional bonding method example (part 2). It is a profile example (the 2) of the conventional bonding method.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Dispenser 20 Adhesive 30 Circuit board 31 Electrode pad 40 Head 41 Low temperature head 42 High temperature head 50 Chip 51 Metal bump 60 Conveying belt 100 Bonding apparatus 200 Bonder part 210 Low temperature head 211 Cylinder (for low temperature head)
220 High temperature head 221 Cylinder (for high temperature head)
230 Dispenser 231 Cylinder (for dispenser)
240 XY table 300 Control unit 310 CPU
320 Main memory 330 Bonding program 340 Low temperature head control unit 350 High temperature head control unit 360 Dispenser control unit 370 XY table control unit 380 Bonding data storage unit 500 Low temperature head 510 High temperature head 600 Adsorption head 610 Low temperature head 620 High temperature head 700 Weight 710 Low temperature head 720 high temperature head

Claims (8)

A low temperature head heated to a first temperature;
A high temperature head heated to a second temperature;
A first heating and pressing means for bringing a metal bump formed on the chip into contact with an electrode pad of a circuit board to which an adhesive is applied, and pressing the chip with the low-temperature head;
Switching from the low temperature head to the high temperature head while maintaining the pressing, and a second heating pressing means for pressing by the high temperature head;
A bonding apparatus comprising: A low temperature head heated to a first temperature;
A high temperature head heated to a second temperature;
A weight of a predetermined weight;
A metal bump formed on a chip is brought into contact with an electrode pad of a circuit board coated with an adhesive, and the weight is connected to the low-temperature head and placed on the chip to press the chip. Heating and pressing means;
Bonding comprising: a second heating and pressing means for releasing the connection between the low-temperature head and the weight and connecting the high-temperature head to the weight placed on the chip to press the chip. apparatus. The bonding apparatus according to claim 1, wherein the second temperature is higher than the first temperature. The bonding apparatus according to claim 1, wherein the adhesive is a thermosetting resin. An adhesive application step of applying an adhesive to the electrode pads on the circuit board;
A chip placement step of contacting the electrode pads with metal bumps formed on the chip; and
A first heating and pressing step of pressing the chip with a low-temperature head heated to a first temperature;
And a second heating and pressing step in which pressing is performed by switching from the low temperature head to a high temperature head heated to a second temperature while maintaining the pressing. An adhesive application step of applying an adhesive to the electrode pads on the circuit board;
A chip placement step of contacting the electrode pads with metal bumps formed on the chip; and
A first heating and pressing step of connecting a weight of a predetermined weight to a low-temperature head heated to a first temperature, placing the weight on the chip and pressing the chip;
And a second heating and pressing step of releasing the connection between the low-temperature head and the weight, connecting the high-temperature head to the weight placed on the chip, and pressing the chip. Method. The bonding method according to claim 5, wherein the second temperature is higher than the first temperature. The bonding method according to claim 5, wherein the adhesive is a thermosetting resin.

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