JP2010087246A - Pattern inspecting method, ion implantation control method, and ion implantation system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an inspecting method capable of appropriately inspecting an ion implantation pattern. <P>SOLUTION: The pattern inspecting method includes: a film forming process of forming a film on a substrate; an ion implantation pattern forming process S12 of forming an ion implantation pattern on the film through an opening pattern formed on a stencil mask; and an optical inspecting process S13 of optically inspecting the ion implantation pattern based upon the opening pattern. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a pattern inspection method, an ion implantation control method, and an ion implantation system.

  In the manufacture of semiconductor devices, ion implantation processes of p-type impurities or n-type impurities are widely performed. Ion implantation is usually performed using a photoresist pattern or silicon oxide film pattern formed by photolithography as a mask. However, such a method using a photolithography technique requires a lot of time and labor, leading to an increase in manufacturing cost.

  In order to solve the above-described problem, a method of performing ion implantation using a stencil mask having an opening pattern has been proposed. In a stencil mask, an opening pattern is usually formed in a membrane provided on a support. In the ion implantation method using a stencil mask, it is necessary to accurately grasp the deflection state of the ion beam and the ion implantation position in order to accurately implant ions into a desired position on the surface of the semiconductor substrate.

  Regarding the measurement of the ion implantation pattern on the substrate, a method of measuring the electrical resistance of the ion implantation region has been proposed (see Patent Document 1). However, this method measures the dimensions of the ion implantation region and cannot measure the position of the ion implantation pattern.

Also, a method of measuring the position of the opening pattern formed on the stencil mask instead of measuring the position of the ion implantation pattern formed on the substrate has been proposed (see Patent Document 2). However, even this method cannot accurately measure the position of the ion implantation pattern. That is, when a high energy ion beam is irradiated to the stencil mask, the temperature of the membrane of the stencil mask becomes high and the membrane is distorted. As a result, the position of the opening pattern formed on the membrane fluctuates and accurate position measurement cannot be performed.
JP-A-6-334014 JP 2004-55780 A

  As described above, in the ion implantation using the stencil mask, it is necessary to accurately grasp the deflection state of the ion beam, the ion implantation position, and the like. However, conventionally, since the ion implantation pattern cannot be accurately inspected, it has been impossible to accurately grasp the deflection state of the ion beam, the ion implantation position, and the like.

  An object of the present invention is to provide an inspection method or the like that can accurately inspect an ion implantation pattern.

  A pattern inspection method according to a first aspect of the present invention includes a film forming step of forming a film on a substrate, and an ion implantation pattern forming step of forming an ion implantation pattern in the film through an opening pattern formed in a stencil mask. And an optical inspection step of optically inspecting the ion implantation pattern based on the opening pattern.

  In the pattern inspection method, it is preferable that the film is made of a resist.

  In the pattern inspection method, it is preferable that the optical inspection step includes a calculation step of calculating a distortion amount of the ion implantation pattern from the dimension of the opening pattern and the dimension of the ion implantation pattern.

  Preferably, the pattern inspection method includes a position reference pattern forming step of forming a position reference pattern on the substrate before the film forming step, and the film has translucency.

  In the pattern inspection method, the optical inspection step includes a design position when the opening pattern is projected onto a substrate and a positional deviation amount of the ion implantation pattern from a positional relationship between the position reference pattern and the ion implantation pattern. It is preferable to include a calculation step of calculating.

  An ion implantation control method according to a second aspect of the present invention is characterized in that a temperature adjustment mechanism of a beam deflector or a stencil mask is controlled based on the amount of distortion using the pattern inspection method.

  An ion implantation control method according to a third aspect of the present invention is characterized in that a temperature adjustment mechanism of a beam deflector or a stencil mask is controlled based on the positional deviation amount using the pattern inspection method.

  An ion implantation system according to a fourth aspect of the present invention includes an ion beam generating unit that forms an ion implantation pattern in a film formed on a substrate through an opening pattern formed in a stencil mask, and the ion implantation pattern is formed in the opening. And a pattern inspection unit that optically inspects based on the pattern.

  The ion implantation system includes an adjustment unit that controls a temperature adjustment mechanism of the stencil mask or a beam deflector of the ion beam generation unit based on a positional deviation amount or a distortion amount that is an inspection result in the pattern inspection unit. Is preferred.

  According to the present invention, since the ion implantation pattern can be easily observed by an optical method, the ion implantation pattern can be accurately inspected.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  FIG. 1 is a diagram schematically showing a schematic configuration of an ion implantation system according to an embodiment of the present invention.

  This system is roughly composed of an ion implantation apparatus 10 and a pattern inspection unit 20.

  The ion implantation apparatus 10 includes an ion beam generation unit 11, an adjustment unit 12, a holding unit (not shown) that holds the processing target substrate 30, and a holding unit (not shown) that holds the stencil mask 40.

  The ion beam generation unit 11 generates an ion beam for ion implantation, and includes an ion source unit, an acceleration tube, a mass selector, a beam focusing lens, a beam scanner, a beam deflector, and the like. The adjustment unit 12 has a function as a controller for adjusting various elements of the ion implantation apparatus 10 (for example, the deflection state of the beam deflector).

  The processing target substrate 30 includes a semiconductor substrate 31 and a resist film 32 formed on the semiconductor substrate 31. The resist film 32 is subjected to ion implantation through an opening pattern formed in the stencil mask 40 to form an ion implantation pattern.

  FIG. 2 is a diagram schematically showing the configuration of the stencil mask 40. The stencil mask 40 has a structure in which a membrane 43 is provided on a support body 41 made of silicon via a silicon oxide film 42. An opening pattern 44 is provided in the membrane 43, and ions are implanted into the processing target substrate 30 through the opening pattern 44.

  Next, an ion implantation pattern inspection method according to this embodiment will be described with reference to the flowchart shown in FIG.

(First inspection method)
The first inspection method will be described. In the first inspection method, the beam deflection state of the ion implantation apparatus is inspected using a beam deflection inspection pattern. Hereinafter, the first inspection method will be described with reference to FIG.

  First, the processing target substrate 30 and the stencil mask 40 are prepared (S11). Hereinafter, this step will be described in detail.

  As for the processing target substrate 30, first, an alignment mark (not shown) is formed on the surface of a semiconductor substrate (silicon substrate or the like) 31 by a lithography process and a dry etching process. The alignment mark is used for alignment when ion implantation is performed through a stencil mask. Subsequently, a resist film 32 is formed on the semiconductor substrate 31 having alignment marks. By using the resist film 32, the region into which ions are implanted is denatured, and the region can be easily recognized optically. The thickness of the resist film 32 is about 250 nm or less, for example. For the resist film 32, a photoresist, an electron beam (EB) resist, or the like can be used. The resist film 32 may be a chemically amplified resist or a non-chemically amplified resist. Further, the resist film 32 may be a positive resist or a negative resist. Furthermore, a film other than the resist film may be used as long as the ion implantation region can be easily observed (identified).

  In the stencil mask 40, as shown in FIG. 4, a square opening pattern 71 is formed as a beam deflection inspection pattern. The length of one side of the opening pattern 71 is, for example, about 2 μm. The stencil mask 40 may be dedicated for inspection or may be formed with a device pattern (device pattern for ion implantation) for forming an actual semiconductor device. When a device pattern is formed on the stencil mask 40, the opening pattern 71 is arranged in an appropriate region other than the device pattern formation region.

  Next, the substrate 30 to be processed and the stencil mask 40 described above are set in an ion implantation apparatus, and ion implantation is performed (S12). Thereby, as shown in FIG. 1, ions emitted from the ion beam generator 11 are implanted into the resist film 32 through the opening pattern 71 formed in the stencil mask 40. As a result, an ion implantation pattern corresponding to the opening pattern formed in the stencil mask 40 is formed in the resist film 32. As already mentioned, this ion implantation pattern can be observed optically.

Note that an n-type or p-type impurity element is used for the implanted ions. Specifically, phosphorus (P), arsenic (As), boron (B), antimony (Sb), or the like can be used. The implantation acceleration voltage is about 60 keV, and the implantation dose is about 1 × 10 ^{13 to} 3 × 10 ¹⁵ ions / cm ² . By using such ion implantation conditions, it is possible to easily observe the ion implantation pattern with a scanning electron microscope. Moreover, when observing with a scanning electron microscope, it is preferable that an observation acceleration voltage is 800 eV or less. If the observation acceleration voltage is higher than 800 eV, the resist film may react with the electron beam and measurement may be difficult.

  Next, the ion implantation pattern formed in the resist film as described above is inspected by the pattern inspection unit 20 of FIG. 1 (S13). Specifically, an image of the ion implantation pattern is acquired by a scanning electron microscope, and the amount of distortion of the ion implantation pattern is calculated from the dimension of the opening pattern and the dimension of the ion implantation pattern. The dimension information of the opening pattern is stored in the pattern inspection unit 20 in advance.

  When ions are implanted into the resist film through the square opening pattern 71 shown in FIG. 4, the ion implantation pattern is distorted depending on the deflection state of the ion beam. That is, the dimensions of the ion implantation pattern in the X and Y directions change according to the degree of deflection of the ion beam in the X and Y directions. Therefore, the dimensions in the X direction and Y direction of the ion implantation pattern are calculated from the image of the ion implantation pattern obtained by the scanning electron microscope, and the X direction and Y direction of the opening pattern stored in the pattern inspection unit 20 are calculated. By comparing with the dimensions, the distortion amount of the ion implantation pattern can be inspected, and the deflection state of the ion beam can be evaluated. For example, the deflection state of the ion beam can be evaluated by comparing the dimensional ratio between the X-direction dimension and the Y-direction dimension of the ion implantation pattern and the dimensional ratio between the X-direction dimension and the Y-direction dimension of the opening pattern.

  Next, predetermined elements of the ion implantation apparatus are adjusted by the adjustment unit 12 of FIG. 1 based on the inspection result of the ion implantation pattern obtained in step S13, that is, the amount of distortion of the ion implantation pattern (S14). In this example, the beam deflection state of the beam deflector is adjusted so that the deflection state (the degree of deflection in the X direction and the Y direction) of the beam deflector of the ion implantation apparatus is appropriate. This makes it possible to perform ion implantation using a stencil mask in an appropriate beam deflection state in an ion implantation process for manufacturing an actual semiconductor device.

  As described above, according to the present embodiment, ions are implanted into the resist film via the stencil mask having the inspection opening pattern, and the ion implantation pattern is formed in the resist film. Thus, by forming the ion implantation pattern in the resist film, the ion implantation pattern can be easily observed by an optical method. As a result, it is possible to accurately inspect the amount of distortion of the ion implantation pattern, and to accurately grasp the deflection state of the ion beam. Therefore, it is possible to form a highly accurate device pattern by reflecting the inspection result in the ion implantation process at the time of actual device fabrication.

(Second inspection method)
Next, a second inspection method for the ion implantation pattern according to this embodiment will be described. In the second inspection method, the positional deviation of the ion implantation pattern is inspected using a pattern for positional deviation inspection. Since the basic method is the same as the first inspection method, the description of the matters described in the first inspection method is omitted. Hereinafter, the second inspection method will be described with reference to FIG.

  First, the processing target substrate 30 and the stencil mask 40 are prepared (S11). Hereinafter, this step will be described in detail.

  FIG. 5 is a cross-sectional view schematically showing the configuration of the processing target substrate 30 used in the present method. The processing target substrate 30 is formed as follows.

  First, an alignment mark (not shown) and a position reference pattern 61 are formed on the surface of a semiconductor substrate (silicon substrate or the like) 31 by a lithography process and a dry etching process. The position reference pattern 61 serves as a position reference when measuring the position of the ion implantation pattern. As shown in FIG. 6, the position reference pattern 61 is a square pattern, and the length of one side is, for example, about 5 μm. The depth of the position reference pattern 61 is about 1 μm.

  Subsequently, a resist film 32 is formed on the semiconductor substrate 31 having the alignment mark and the position reference pattern 61. By using the resist film 32, the region into which ions are implanted is altered, and the region can be easily observed optically. In addition, the resist film 32 has translucency so that the position reference pattern 61 can be optically observed through the resist film 32. In this example, the position reference pattern 61 can be optically observed by setting the thickness of the resist film 32 to about 250 nm or less. The type of resist film is the same as that shown in the first inspection method. Further, other than the resist film, the ion-implanted region can be easily optically observed (identified) and has translucency so that the position reference pattern 61 can be easily optically observed (identified). These films may be used.

  In the stencil mask 40, as shown in FIG. 7, a plurality of square-shaped opening patterns 72 are formed as patterns for positional deviation inspection. The length of one side of each opening pattern 72 is, for example, about 5 μm. The opening pattern 72 is formed in a mesh shape over the entire region of the stencil mask 40.

  Next, the substrate 30 to be processed and the stencil mask 40 described above are set in an ion implantation apparatus, and ion implantation is performed in the same manner as in the first inspection method (S12). Thereby, as shown in FIG. 1, ions emitted from the ion beam generator 11 are implanted into the resist film 32 through the opening pattern 72 formed in the stencil mask 40. As a result, an ion implantation pattern corresponding to the opening pattern 72 formed in the stencil mask 40 is formed in the resist film 32. As already mentioned, this ion implantation pattern can be observed optically.

  Next, the ion implantation pattern formed in the resist film as described above is inspected by the pattern inspection unit 20 of FIG. 1 (S13). Specifically, the position of the ion implantation pattern is obtained using an optical position coordinate measuring machine, and the positional deviation amount of the ion implantation pattern is calculated as described later. In the position coordinate measuring machine, the wafer stage on which the laser displacement meter is mounted moves while recognizing the mark or pattern on the wafer surface under the microscope, so that the distance can be measured with high accuracy. Hereinafter, the inspection of the positional deviation amount of the ion implantation pattern will be specifically described.

  First, the position reference pattern 61 formed on the semiconductor substrate 31 is measured using a position coordinate measuring machine. The position of the position reference pattern 61 becomes a reference coordinate (reference position). Subsequently, the ion implantation pattern formed in the resist film 32 corresponding to the opening pattern 72 of the stencil mask is measured, and the coordinates of the ion implantation pattern with respect to the coordinates (reference coordinates) of the position reference pattern 61 are obtained.

  FIG. 8 is a diagram schematically showing the inspection result of the ion implantation pattern described above. In FIG. 8, reference numeral 81 denotes measurement coordinates, and an ion implantation pattern is located at each intersection of the measurement coordinates 81. Reference numeral 82 denotes design coordinates. When the ion implantation pattern is ideally formed, the ion implantation pattern is located at each intersection of the design coordinates 82. That is, an ideal position (design position) when the opening pattern 72 of the stencil mask is projected onto the substrate corresponds to the position of the intersection of the design coordinates 82. The relationship between the position of the position reference pattern 61 and the design position, that is, the coordinates of the design position with respect to the position reference pattern 61 are stored in advance in the pattern inspection unit 20 of FIG. Therefore, by obtaining the coordinates of the ion implantation pattern with respect to the position reference pattern 61, it is possible to calculate the displacement amount of the ion implantation pattern with respect to the design position.

  As shown in FIG. 8, the measurement coordinates 81 are distorted because the stencil mask is distorted during ion implantation. That is, when a high energy ion beam is irradiated to the stencil mask, the temperature of the membrane of the stencil mask becomes high and the membrane is distorted. As a result, the position of the opening pattern 72 formed on the membrane changes, and the position of the ion implantation pattern formed on the resist film deviates from the ideal position. That is, the position of the ion implantation pattern formed in the resist film depends on the distortion of the stencil mask at the time of ion implantation. Therefore, it is possible to evaluate the distortion of the stencil mask during ion implantation by evaluating the amount of displacement of the ion implantation pattern.

  Next, based on the inspection result of the ion implantation pattern obtained in step S13, that is, based on the positional deviation amount of the ion implantation pattern, the adjustment unit 12 in FIG. 1 adjusts predetermined elements of the ion implantation apparatus (S14). ). In this example, the set temperature of the temperature adjustment mechanism for the stencil mask is adjusted so that the temperature of the stencil mask set in the ion implantation apparatus becomes a desired temperature. If the temperature of the stencil mask is accurately set at the time of ion implantation, the distortion of the stencil mask can be accurately controlled. Therefore, in an ion implantation process for manufacturing an actual semiconductor device, ion implantation using a stencil mask can be performed at an appropriate position. The inspection result obtained in step S13 may be fed back to the stencil mask manufacturing process to manufacture a stencil mask having a device pattern (opening pattern) in consideration of distortion of the stencil mask during ion implantation. .

  As described above, also in the present inspection method, as in the first inspection method, ions are implanted into the resist film through the stencil mask having the opening pattern for inspection, and an ion implantation pattern is formed in the resist film. Thus, by forming the ion implantation pattern in the resist film, the ion implantation pattern can be easily observed by an optical method. As a result, the ion implantation pattern can be accurately inspected, and the positional deviation amount of the ion implantation pattern can be accurately grasped. Therefore, it is possible to form a highly accurate device pattern by reflecting the inspection result in the ion implantation process at the time of actual device fabrication.

(Third inspection method)
Next, a third inspection method for the ion implantation pattern according to this embodiment will be described. In the third inspection method, the positional deviation of the ion implantation pattern is inspected using a pattern for positional deviation inspection. Since the basic method is the same as the first inspection method, the description of the matters described in the first inspection method is omitted. Hereinafter, the third inspection method will be described with reference to FIG.

  First, the processing target substrate 30 and the stencil mask 40 are prepared (S11). Hereinafter, this step will be described in detail.

  FIG. 9 is a cross-sectional view schematically showing the configuration of the processing target substrate 30 used in this method. The processing target substrate 30 is formed as follows.

  First, an alignment mark (not shown) and a position reference pattern 91 are formed on the surface of the semiconductor substrate 31 by a lithography process and a dry etching process. As shown in FIG. 10, the position reference pattern 91 is formed by four linear patterns having the same shape, and the dimensions thereof are as shown in FIG. The depth of the position reference pattern 91 is about 1 μm.

  Subsequently, a resist film 32 is formed on the semiconductor substrate 31 having the alignment mark and the position reference pattern 91. By using the resist film 32, the region into which ions are implanted is altered, and the region can be easily observed optically. In addition, the resist film 32 has translucency so that the position reference pattern 91 can be optically observed through the resist film 32. In this example, the position reference pattern 91 can be optically observed by setting the thickness of the resist film 32 to about 250 nm or less. The type of resist film is the same as that shown in the first inspection method. Further, other than the resist film, the ion-implanted region can be easily optically observed (identified) and has translucency so that the position reference pattern 91 can be easily optically observed (identified). These films may be used.

  In the stencil mask 40, as shown in FIG. 11, an opening pattern 92 for position shift inspection is formed. The opening pattern 92 is a pattern obtained by enlarging the position reference pattern 91 (see FIG. 10) formed on the semiconductor substrate 31 once, and the dimensions thereof are as shown in FIG.

  Next, the substrate 30 to be processed and the stencil mask 40 described above are set in an ion implantation apparatus, and ion implantation is performed in the same manner as in the first inspection method (S12). As a result, as shown in FIG. 1, ions emitted from the ion beam generator 11 are implanted into the resist film 32 through the opening pattern 92 formed in the stencil mask 40. As a result, an ion implantation pattern corresponding to the opening pattern formed in the stencil mask 40 is formed in the resist film 32. As already mentioned, this ion implantation pattern can be observed optically.

  Next, the ion implantation pattern formed in the resist film as described above is inspected by the pattern inspection unit 20 of FIG. 1 (S13). Specifically, an image of the surface region of the processing target substrate 30 is acquired by a scanning electron microscope, and the position shift amount of the ion implantation pattern is inspected based on the acquired image. This will be specifically described below.

  FIG. 12 is a diagram showing an image of the surface area of the processing target substrate 30. As shown in FIG. 12, a position reference pattern 91 and an ion implantation pattern 92 a are formed in the surface region of the processing target substrate 30. As already described, the position reference pattern 91 is formed in advance on the surface of the semiconductor substrate 31. The ion implantation pattern 92 a is a pattern formed in the resist film 32 corresponding to the opening pattern 92 formed in the stencil mask 40. A pair of the position reference pattern 91 and the ion implantation pattern 92a is formed in a mesh shape over the entire region.

  When the ion implantation pattern 92 a is ideally formed, the center 94 of the ion implantation pattern 92 a coincides with the center 93 of the position reference pattern 91. That is, the ion implantation pattern 92a is formed at an ideal position when the opening pattern 92 of the stencil mask is projected onto the substrate. Also, the coordinates of the position of the position reference pattern 91 are stored in advance in the pattern inspection unit 20 of FIG. Accordingly, by obtaining the amount of deviation of the center 94 of the ion implantation pattern 92a from the center 93 of the position reference pattern 91, the amount of deviation of the ion implantation pattern 92a from the ideal position can be calculated.

  As already described, when the stencil mask is distorted during ion implantation, the position of the ion implantation pattern 92a formed in the resist film is shifted from the ideal position. Therefore, the distortion of the stencil mask at the time of ion implantation can be evaluated by obtaining the displacement amount of the ion implantation pattern 92a over the entire region.

  Next, based on the inspection result of the ion implantation pattern obtained in step S13, that is, based on the positional deviation amount of the ion implantation pattern, the adjustment unit 12 in FIG. 1 adjusts predetermined elements of the ion implantation apparatus (S14). ). In this example, the set temperature of the temperature control mechanism for the stencil mask is adjusted so that the temperature of the stencil mask set in the ion implantation apparatus becomes a desired temperature. If the temperature of the stencil mask is accurately set at the time of ion implantation, the distortion of the stencil mask can be accurately controlled. Therefore, in an ion implantation process for manufacturing an actual semiconductor device, ion implantation using a stencil mask can be performed at an appropriate position. The inspection result obtained in step S13 may be fed back to the stencil mask manufacturing process to manufacture a stencil mask having a device pattern (opening pattern) in consideration of distortion of the stencil mask during ion implantation. .

  As described above, also in the present inspection method, as in the first inspection method, ions are implanted into the resist film through the stencil mask having the opening pattern for inspection, and an ion implantation pattern is formed in the resist film. Thus, by forming the ion implantation pattern in the resist film, the ion implantation pattern can be easily observed by an optical method. As a result, the ion implantation pattern can be accurately inspected, and the positional deviation amount of the ion implantation pattern can be accurately grasped. Therefore, it is possible to form a highly accurate device pattern by reflecting the inspection result in the ion implantation process at the time of actual device fabrication.

  Note that the first, second, and third inspection methods described above can be combined as appropriate. For example, the beam deflection state inspection process shown in the first inspection method and the ion implantation pattern position inspection process shown in the second or third inspection method may be made common. Good.

(Concrete example)
Hereinafter, specific examples of embodiments of the present invention will be described.

  A silicon wafer was used as the semiconductor substrate 31, and an alignment mark, a position reference pattern 61 (see FIG. 6) and a position reference pattern 91 (see FIG. 10) were formed on the surface of the silicon wafer by a lithography process and a dry etching process. The depth of the position reference pattern 61 and the position reference pattern 91 was 1 μm. Subsequently, a non-chemically amplified positive resist having a thickness of 250 nm was applied to the surface of the semiconductor substrate 31 on which the position reference pattern 61 and the position reference pattern 91 were formed.

  As the stencil mask for ion implantation, a mask on which an opening pattern 71 (see FIG. 4), an opening pattern 72 (see FIG. 7) and an opening pattern 92 (see FIG. 11) are formed is used.

The conditions for ion implantation into the resist film using a stencil mask were an acceleration voltage of 60 keV and an implantation dose of 1 × 10 ^{13 to} 3 × 10 ¹⁵ ions / cm ² . Boron ions were used as implanted ions.

  The ion implantation pattern obtained as described above was inspected. For the inspection, an optical position coordinate measuring machine and a scanning electron microscope were used. By using a position coordinate measuring machine, automatic measurement could be performed in a short time, and measurement with high reproducibility of about several tens of nm could be performed. Moreover, in measurement using a scanning electron microscope, automatic measurement can be performed by processing an image of a dedicated pattern, and it is possible to perform very high-precision measurement with a measurement reproducibility of about several nanometers. It was.

  Measurement on 9 chips was performed using a position coordinate measuring machine, and the amount of coordinate deviation of the ion implantation pattern was analyzed. When the values obtained by calculating the translation amount in the translation direction were averaged, the value in the X direction was 0.23 μm and the value in the Y direction was 0.21 μm. By feeding back these inspection results to the ion implanter, highly accurate ion implantation using a stencil mask has become possible.

  Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit of the present invention. Furthermore, the above embodiments include inventions at various stages, and various inventions can be extracted by appropriately combining the disclosed constituent elements. For example, even if several constituent requirements are deleted from the disclosed constituent requirements, the invention can be extracted as an invention as long as a predetermined effect can be obtained.

It is the figure which showed typically schematic structure of the ion implantation system which concerns on embodiment of this invention. It is the figure which showed the structure of the stencil mask concerning embodiment of this invention typically. 3 is a flowchart illustrating a method according to an embodiment of the present invention. It is a figure showing an opening pattern formed in a stencil mask concerning an embodiment of the present invention. FIG. 4 is a cross-sectional view schematically showing the configuration of an example of a processing target substrate according to the embodiment of the present invention. It is a figure showing a position reference pattern formed in a semiconductor substrate concerning an embodiment of the present invention. It is a figure showing an example of an opening pattern formed in a stencil mask concerning an embodiment of the present invention. It is a figure showing an inspection result of an ion implantation pattern typically concerning an embodiment of the present invention. FIG. 10 is a cross-sectional view schematically showing the configuration of another example of the substrate to be processed according to the embodiment of the present invention. It is a figure showing a position reference pattern formed in a semiconductor substrate concerning an embodiment of the present invention. It is the figure which showed the other example of the opening pattern formed in a stencil mask concerning embodiment of this invention. It is a figure shown about the pattern formed in the surface area | region of a process target board | substrate concerning embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Ion implantation apparatus 11 ... Ion beam production | generation part 12 ... Adjustment part 20 ... Pattern inspection part 30 ... Substrate to be processed 31 ... Semiconductor substrate 32 ... Resist film 40 ... Stencil mask 41 ... Support body 42 ... Silicon oxide film 43 ... Membrane 44 ... Opening pattern 61 ... Position reference pattern 71 ... Opening pattern 72 ... Opening pattern 81 ... Measurement coordinates 82 ... Design coordinates 91 ... Position reference pattern 92 ... Opening pattern 92a ... Ion implantation pattern

Claims (9)

A film forming step of forming a film on the substrate;
An ion implantation pattern forming step of forming an ion implantation pattern in the film through an opening pattern formed in a stencil mask;
An optical inspection step of optically inspecting the ion implantation pattern based on the opening pattern;
A pattern inspection method comprising:   The pattern inspection method according to claim 1, wherein the film is made of a resist.   The pattern inspection method according to claim 1, wherein the optical inspection step includes a calculation step of calculating a distortion amount of the ion implantation pattern from the dimension of the opening pattern and the dimension of the ion implantation pattern.   The pattern inspection method according to claim 1, further comprising a position reference pattern forming step of forming a position reference pattern on the substrate before the film forming step, wherein the film has translucency.   The optical inspection step calculates a position shift amount of the ion implantation pattern from a design position when the opening pattern is projected on the substrate and a positional relationship between the position reference pattern and the ion implantation pattern; The pattern inspection method according to claim 4, further comprising:   4. An ion implantation control method, wherein a temperature adjusting mechanism of a beam deflector or a stencil mask is controlled based on the amount of distortion using the pattern inspection method according to claim 3.   6. An ion implantation control method, wherein a temperature adjusting mechanism of a beam deflector or a stencil mask is controlled based on the positional deviation amount using the pattern inspection method according to claim 5. An ion beam generating unit that forms an ion implantation pattern in a film formed on the substrate through an opening pattern formed in the stencil mask;
A pattern inspection unit for optically inspecting the ion implantation pattern based on the opening pattern;
An ion implantation system comprising:   2. The apparatus according to claim 1, further comprising an adjustment unit that controls a temperature adjustment mechanism of the stencil mask or a beam deflector of the ion beam generation unit based on a positional deviation amount or a distortion amount as an inspection result in the pattern inspection unit. 9. The ion implantation system according to 8.

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