JP2010087005A - Light emitting device - Google Patents

Light emitting device Download PDF

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JP2010087005A
JP2010087005A JP2008251155A JP2008251155A JP2010087005A JP 2010087005 A JP2010087005 A JP 2010087005A JP 2008251155 A JP2008251155 A JP 2008251155A JP 2008251155 A JP2008251155 A JP 2008251155A JP 2010087005 A JP2010087005 A JP 2010087005A
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led chip
mounting substrate
emitting device
light emitting
light
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JP5179311B2 (en
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Takanori Akeda
孝典 明田
Hiroshi Fukushima
博司 福島
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Panasonic Electric Works Co Ltd
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Panasonic Electric Works Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device reducing an effective size of a light source determined by an LED chip and a reflecting section. <P>SOLUTION: The light emitting device A includes: a rectangular plate-shaped LED chip 1; a rectangular plate-shaped mounting board 2 with the LED chip 1 mounted on one surface; and a reflecting section 3 arranged on the one surface of the mounting board 2 and having reflecting surfaces 31 that reflect light emitted sideward from the LED chip 1 to the side opposite to the mounting board 2 in the LED chip 1. The reflecting section 3 is formed such that the reflection surfaces 31 rise from respective four sides of an outer periphery of a projection region M of the LED chip 1 on the one surface of the mounting board 2. Here, the reflecting section 3 includes a plurality (four in this embodiment) of reflecting elements 30 separated in the circumferential direction of the outer periphery of the projection region M. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、LEDチップ(発光ダイオードチップ)を利用した発光装置に関するものである。   The present invention relates to a light emitting device using an LED chip (light emitting diode chip).

従来から、図10および図11に示すように、矩形板状のLEDチップ1’と、LEDチップ1’が一表面側に実装された矩形板状の実装基板2’と、実装基板2’の上記一表面側においてLEDチップ1’を囲むように配置されLEDチップ1’から側方へ放射された光をLEDチップ1’における実装基板2’側とは反対側へ反射する反射面31’を有する反射部3’とを備えた発光装置A’が提案されている(例えば、特許文献1参照)。   Conventionally, as shown in FIGS. 10 and 11, a rectangular plate-shaped LED chip 1 ′, a rectangular plate-shaped mounting substrate 2 ′ on which the LED chip 1 ′ is mounted on one surface side, and a mounting substrate 2 ′ On the one surface side, a reflecting surface 31 ′ is disposed so as to surround the LED chip 1 ′ and reflects light emitted from the LED chip 1 ′ to the side opposite to the mounting substrate 2 ′ side of the LED chip 1 ′. There has been proposed a light emitting device A ′ including a reflective portion 3 ′ having the same (for example, see Patent Document 1).

ここにおいて、実装基板2’は、絶縁性基板21’の一表面側にLEDチップ1’への給電用の導体パターン22’,22’が形成されており、上記一表面側の中央部においてLEDチップ1’のアノード電極(図示せず)およびカソード電極(図示れず)それぞれが導体パターン22’,22’とバンプ(図示せず)を介して接合され電気的に接続されている。要するに、LEDチップ1’は実装基板2’にフリップチップ実装されている。なお、上記特許文献1には、LEDチップ1’の上記アノード電極および上記カソード電極をボンディングワイヤを介して導体パターン22’,22’と電気的に接続する実装構造を採用してもよいことが記載されている。   Here, the mounting substrate 2 ′ is provided with conductor patterns 22 ′ and 22 ′ for supplying power to the LED chip 1 ′ on one surface side of the insulating substrate 21 ′, and the LED on the center portion on the one surface side. An anode electrode (not shown) and a cathode electrode (not shown) of the chip 1 ′ are joined and electrically connected to the conductor patterns 22 ′ and 22 ′ via bumps (not shown), respectively. In short, the LED chip 1 'is flip-chip mounted on the mounting substrate 2'. In Patent Document 1, a mounting structure in which the anode electrode and the cathode electrode of the LED chip 1 ′ are electrically connected to the conductor patterns 22 ′ and 22 ′ via bonding wires may be employed. Are listed.

また、反射部3’は、円形状に開口した枠状の形状であって、実装基板2’の上記一表面から離れるにつれて開口面積が徐々に大きくなる形状に形成されている。反射部3’は、樹脂や金属などにより形成され、内側面にLEDチップ1’から放射される光に対する反射率の高い金属膜が被着されており、当該金属膜の表面が反射面31’を構成している。なお、反射部3’の外周形状は矩形状に形成されている。   Further, the reflecting portion 3 ′ has a circular frame-like shape, and the opening area gradually increases as the distance from the one surface of the mounting substrate 2 ′ increases. The reflecting portion 3 ′ is formed of resin, metal, or the like, and a metal film having a high reflectance with respect to light emitted from the LED chip 1 ′ is deposited on the inner side surface, and the surface of the metal film is the reflecting surface 31 ′. Is configured. Note that the outer peripheral shape of the reflecting portion 3 ′ is formed in a rectangular shape.

また、上記特許文献1には、実装基板2’と反射部3’とで囲まれる空間にLEDチップ1’を覆う透明樹脂からなる封止部を設けることも記載されており、例えば、LEDチップ1’として青色光を放射する青色LEDチップを採用し、封止部にLEDチップ1’から放射された青色光によって励起されて黄色光を放射する蛍光体を分散させておけば、青色光と黄色光との混色光として白色光を得ることができる。   Patent Document 1 also describes that a sealing portion made of a transparent resin that covers the LED chip 1 ′ is provided in a space surrounded by the mounting substrate 2 ′ and the reflection portion 3 ′. For example, the LED chip If a blue LED chip that emits blue light is adopted as 1 ′ and a phosphor that emits yellow light by being excited by the blue light emitted from the LED chip 1 ′ is dispersed in the sealing portion, White light can be obtained as mixed light with yellow light.

上述の発光装置A’は、LEDチップ1’の配光特性が例えば拡散配光であっても、実装基板2’の上記一表面側に反射部3’が配置されていることにより、LEDチップ1’から側方へ放射された光が反射部3’の反射面31’で反射されるので、発光装置A’から放射される光の配光が制御され、発光装置A’から放射される光の指向性を強めることができる。
特開2005−294292号公報
Even if the light distribution characteristic of the LED chip 1 ′ is, for example, diffusive light distribution, the light emitting device A ′ described above has the LED chip mounted on the one surface side of the mounting substrate 2 ′ by the reflection portion 3 ′. Since the light emitted from 1 ′ to the side is reflected by the reflecting surface 31 ′ of the reflecting portion 3 ′, the light distribution of the light emitted from the light emitting device A ′ is controlled and emitted from the light emitting device A ′. The directivity of light can be strengthened.
JP 2005-294292 A

ところで、上述の発光装置A’を例えば配光制御用部材(例えば、レンズ、反射鏡など)を有する照明器具に組み込んで使用する場合、光利用効率および配光制御用部材での配光制御性を向上させるために発光装置A’の実効的な光源サイズを小さくすることが要求されている。   By the way, when the above-described light emitting device A ′ is used by being incorporated in, for example, a lighting fixture having a light distribution control member (for example, a lens, a reflector, etc.), the light use efficiency and the light distribution controllability by the light distribution control member In order to improve the above, it is required to reduce the effective light source size of the light emitting device A ′.

しかしながら、上述の発光装置A’では、LEDチップ1’の外周形状が矩形状である一方で反射部3’の開口形状が円形状なので、LEDチップ1’と反射部3’とで決まる実効的な光源サイズ(ここでは、反射部3’の開口サイズが実効的な光源サイズとなる)がLEDチップのチップサイズよりも大きくなりすぎてしまう。   However, in the above-described light emitting device A ′, since the outer peripheral shape of the LED chip 1 ′ is rectangular, the opening shape of the reflecting portion 3 ′ is circular, so that the effective is determined by the LED chip 1 ′ and the reflecting portion 3 ′. The light source size (here, the opening size of the reflecting portion 3 ′ becomes an effective light source size) becomes too large than the chip size of the LED chip.

本発明は上記事由に鑑みて為されたものであり、その目的は、LEDチップと反射部とで決まる実効的な光源サイズの小型化を図れる発光装置を提供することにある。   The present invention has been made in view of the above-described reasons, and an object thereof is to provide a light-emitting device capable of reducing the effective light source size determined by the LED chip and the reflection portion.

請求項1の発明は、矩形板状のLEDチップと、LEDチップが一表面側に実装された実装基板と、LEDチップから側方へ放射された光をLEDチップにおける実装基板側とは反対側へ反射する反射面を有する反射部とを備え、反射部の反射面が、実装基板の前記一表面におけるLEDチップの投影領域の外周線の4辺それぞれから立ち上がる形で形成されてなることを特徴とする。   The invention of claim 1 includes a rectangular plate-shaped LED chip, a mounting substrate on which the LED chip is mounted on one surface side, and light emitted from the LED chip to the side opposite to the mounting substrate side in the LED chip. And a reflecting portion having a reflecting surface that reflects toward the surface, the reflecting surface of the reflecting portion being formed so as to rise from each of the four sides of the outer peripheral line of the projection area of the LED chip on the one surface of the mounting substrate. And

この発明によれば、反射部の反射面が、実装基板の一表面におけるLEDチップの投影領域の外周線の4辺それぞれから立ち上がる形で形成されているので、LEDチップと反射部とで決まる実効的な光源サイズの小型化を図れる。   According to the present invention, the reflecting surface of the reflecting portion is formed so as to rise from each of the four sides of the outer peripheral line of the projection area of the LED chip on one surface of the mounting substrate, so that the effective that is determined by the LED chip and the reflecting portion. The light source size can be reduced.

請求項2の発明は、請求項1の発明において、前記反射部は、前記外周線の周方向において離間した複数の反射エレメントにより構成され、前記実装基板は、前記一表面側において前記LEDチップに電気的に接続される導体パターンが、前記周方向において隣り合う反射エレメント間に配設されてなることを特徴とする。   According to a second aspect of the present invention, in the first aspect of the invention, the reflective portion is configured by a plurality of reflective elements spaced apart in the circumferential direction of the outer peripheral line, and the mounting substrate is formed on the LED chip on the one surface side. An electrically connected conductor pattern is provided between the reflective elements adjacent in the circumferential direction.

この発明によれば、前記実装基板の前記一表面側に前記LEDチップに電気的に接続される導体パターンを設けながらも、実効的な光源サイズの小型化を図れる。   According to the present invention, it is possible to reduce the effective light source size while providing a conductor pattern electrically connected to the LED chip on the one surface side of the mounting substrate.

請求項3の発明は、請求項1の発明において、前記実装基板は、前記LEDチップに電気的に接続される給電用の貫通孔配線が形成されてなることを特徴とする。   A third aspect of the invention is characterized in that, in the first aspect of the invention, the mounting substrate is formed with a feed through-hole wiring electrically connected to the LED chip.

この発明によれば、例えば照明器具などの器具本体に収納する回路基板に実装して用いる場合に、ワイヤボンディング工程が不要となるという利点がある。また、前記実装基板において貫通孔配線を前記LEDチップの投影領域の外側に形成すれば、前記実装基板の他表面側における前記LEDチップの投影領域の全面を回路基板などに半田などにより接合することが可能となり、放熱性を向上できる。   According to the present invention, for example, there is an advantage that a wire bonding step is not required when mounted on a circuit board housed in a fixture body such as a lighting fixture. Further, if through-hole wiring is formed outside the projection area of the LED chip in the mounting board, the entire projection area of the LED chip on the other surface side of the mounting board is bonded to a circuit board or the like by soldering or the like. It is possible to improve heat dissipation.

請求項4の発明は、請求項1ないし請求項3の発明において、前記反射部は、前記実装基板と連続一体に形成されてなることを特徴とする。   According to a fourth aspect of the present invention, in the first to third aspects of the present invention, the reflection portion is formed integrally with the mounting substrate.

この発明によれば、前記反射部と前記実装基板とが別部材であって両者を固着する必要がある場合に比べて製造工程の簡略化による低コスト化を図れる。   According to the present invention, the cost can be reduced by simplifying the manufacturing process as compared with the case where the reflecting portion and the mounting substrate are separate members and both need to be fixed.

請求項5の発明は、請求項1ないし請求項4の発明において、前記反射部および前記実装基板は、シリコン基板を用いて形成されてなることを特徴とする。   According to a fifth aspect of the present invention, in the first to fourth aspects of the present invention, the reflecting portion and the mounting substrate are formed using a silicon substrate.

この発明によれば、シリコン基板を結晶異方性エッチングすることにより前記反射部を形成することができ、前記反射面の立ち上がり角度の再現性を高めることが可能となる。   According to the present invention, the reflective portion can be formed by crystal anisotropic etching of the silicon substrate, and the reproducibility of the rising angle of the reflective surface can be improved.

請求項1の発明では、LEDチップと反射部とで決まる実効的な光源サイズの小型化を図れるという効果がある。   According to the first aspect of the present invention, there is an effect that an effective light source size determined by the LED chip and the reflection portion can be reduced.

(実施形態1)
本実施形態の発光装置Aは、図1に示すように、矩形板状のLEDチップ1と、LEDチップ1が一表面側に実装された矩形板状の実装基板2と、実装基板2の上記一表面側に配置されLEDチップ1から側方へ放射された光(LEDチップ1の側面から放射された光や、LEDチップ1における実装基板2側とは反対の表面から当該表面に対して低角度の斜め方向へ放射された光など)をLEDチップ1における実装基板2側とは反対側へ反射する反射面31を有する反射部3とを備えている。
(Embodiment 1)
As shown in FIG. 1, the light emitting device A of the present embodiment includes a rectangular plate-shaped LED chip 1, a rectangular plate-shaped mounting substrate 2 on which the LED chip 1 is mounted on one surface side, and the above-described mounting substrate 2. Light that is arranged on one surface side and emitted sideways from the LED chip 1 (light emitted from the side surface of the LED chip 1 or the surface opposite to the mounting substrate 2 side of the LED chip 1 is low relative to the surface. And a reflecting portion 3 having a reflecting surface 31 that reflects light emitted in an oblique direction of the angle to the side opposite to the mounting substrate 2 side in the LED chip 1.

LEDチップ1は、青色光を放射するGaN系の青色LEDチップであって、厚み方向の一表面側にアノード電極(図示せず)およびカソード電極(図示せず)が形成されており、実装基板2にフリップチップ実装してある。なお、LEDチップ1は、青色LEDチップに限定するものではなく、例えば、紫外LEDチップ、赤色LEDチップ、緑色LEDチップなどでもよい。   The LED chip 1 is a GaN-based blue LED chip that emits blue light, and an anode electrode (not shown) and a cathode electrode (not shown) are formed on one surface side in the thickness direction. 2 is flip-chip mounted. The LED chip 1 is not limited to the blue LED chip, and may be, for example, an ultraviolet LED chip, a red LED chip, a green LED chip, or the like.

また、実装基板2は、シリコン基板20を用いて形成されており、上記一表面側にLEDチップ1への給電用の一対の導体パターン22,22が形成され、上記一表面側の中央部においてLEDチップ1の上記アノード電極および上記カソード電極それぞれが導体パターン22,22とバンプ4,4を介して接合され電気的に接続されている。ここで、実装基板2の上記一表面側には両導体パターン22,22とシリコン基板20とを電気的に絶縁するシリコン酸化膜からなる絶縁膜23が形成されている。要するに、両導体パターン22,22は絶縁膜23上に形成されている。なお、導体パターン22,22は、Ti膜からなる密着性改善膜とAu膜との積層膜により構成されている。また、バンプ4は、Auバンプにより構成されている。   Further, the mounting substrate 2 is formed using a silicon substrate 20, and a pair of conductor patterns 22 and 22 for supplying power to the LED chip 1 are formed on the one surface side, and in the central portion on the one surface side. The anode electrode and the cathode electrode of the LED chip 1 are joined and electrically connected to the conductor patterns 22 and 22 via the bumps 4 and 4, respectively. Here, an insulating film 23 made of a silicon oxide film that electrically insulates both the conductor patterns 22 and 22 and the silicon substrate 20 is formed on the one surface side of the mounting substrate 2. In short, the two conductor patterns 22 and 22 are formed on the insulating film 23. The conductor patterns 22 and 22 are composed of a laminated film of an adhesion improving film made of a Ti film and an Au film. The bumps 4 are composed of Au bumps.

ここにおいて、導体パターン22,22は、実装基板2の上記一表面におけるLEDチップ1の投影領域M内にLEDチップ1が接合され電気的に接続される接続部22a,22aが形成されているが、LEDチップ1の上記アノード電極の平面サイズがカソード電極の平面サイズに比べて大きくなっているので、一対の接続部22a,22aのうち上記アノード電極に対応する接続部(以下、第1の接続部と称する)22aの平面サイズが上記カソード電極に対応する接続部(以下、第2の接続部と称する)22aの平面サイズに比べて大きくなっており、第1の接続部22の方が第2の接続部22に比べて多数のバンプ4と接合されている。なお、本実施形態では、LEDチップ1としてチップサイズが1mm□のものを用いており、第1の接続部22が25個のバンプ4を介して上記アノード電極と接合され、第2の接続部22が1個のバンプ23を介して上記カソード電極と接合されているが、LEDチップのチップサイズおよびバンプ4の数は特に限定するものではない。   Here, the conductor patterns 22 and 22 are formed with connection portions 22a and 22a to which the LED chip 1 is joined and electrically connected in the projection region M of the LED chip 1 on the one surface of the mounting substrate 2, respectively. Since the planar size of the anode electrode of the LED chip 1 is larger than the planar size of the cathode electrode, the connection portion corresponding to the anode electrode (hereinafter referred to as the first connection) of the pair of connection portions 22a and 22a. The planar size of a connecting portion 22a corresponding to the cathode electrode (hereinafter referred to as a second connecting portion) 22a is larger, and the first connecting portion 22 is the first connecting portion 22a. Compared to the two connection portions 22, the bumps 4 are joined to each other. In the present embodiment, the LED chip 1 having a chip size of 1 mm □ is used, and the first connection portion 22 is joined to the anode electrode via the 25 bumps 4 to form the second connection portion. Although 22 is joined to the cathode electrode through one bump 23, the chip size of the LED chip and the number of bumps 4 are not particularly limited.

本実施形態の発光装置Aは、LEDチップ1が実装基板2にフリップチップ実装されているが、LEDチップ1の上記アノード電極および上記カソード電極をボンディングワイヤを介して導体パターン22,22と電気的に接続する実装構造を採用してもよい。なお、LEDチップ1は、厚み方向の上記一表面側に上記アノード電極および上記カソード電極が形成されているが、厚み方向の上記一表面側に上記アノード電極が形成され、他表面側に上記カソード電極が形成されたものを用いてもよく、この場合には、上記アノード電極と上記カソード電極との2つの電極のうちの一方の電極を一方の導体パターン22に例えばAuSn層からなる導電性接合層を介して電気的に接続し、他方の電極を他方の導体パターン22にボンディングワイヤを介して電気的に接続すればよい。   In the light emitting device A of the present embodiment, the LED chip 1 is flip-chip mounted on the mounting substrate 2, and the anode electrode and the cathode electrode of the LED chip 1 are electrically connected to the conductor patterns 22 and 22 via bonding wires. A mounting structure that connects to may be adopted. The LED chip 1 has the anode electrode and the cathode electrode formed on the one surface side in the thickness direction. The anode electrode is formed on the one surface side in the thickness direction, and the cathode electrode is formed on the other surface side. An electrode in which an electrode is formed may be used. In this case, one of the two electrodes of the anode electrode and the cathode electrode is connected to one conductor pattern 22 by, for example, conductive bonding made of an AuSn layer. What is necessary is just to electrically connect through a layer and to electrically connect the other electrode to the other conductor pattern 22 through a bonding wire.

また、反射部3は、反射面31が、実装基板2の上記一表面におけるLEDチップ1の投影領域Mの外周線の4辺それぞれから立ち上がる形で形成されている。なお、LEDチップ1の投影領域Mは正方形状である。   In addition, the reflecting portion 3 is formed such that the reflecting surface 31 rises from each of the four sides of the outer peripheral line of the projection area M of the LED chip 1 on the one surface of the mounting substrate 2. In addition, the projection area | region M of LED chip 1 is square shape.

ここにおいて、反射部3は、上記投影領域Mの外周線の周方向において離間した複数(本実施形態では、4つ)の反射エレメント30により構成され、実装基板2は、導体パターン22,22における接続部22a,22a以外の部位が、上記周方向において隣り合う反射エレメント30間に配設されており、導体パターン22,22において接続部22a,22a側とは反対側の端部が外部接続用電極22b,22bを構成している。上述の反射部3は、4つの反射エレメント30が実装基板2の上記一表面におけるLEDチップ1の投影領域Mの外周線の4辺それぞれに対して独立して形成されており、上記周方向における反射エレメント30の長さを全て同じ値に設定してある。なお、本実施形態の発光装置Aは、平面視において、反射部3の反射面31がLEDチップ1の辺と平行となっている。   Here, the reflecting portion 3 is configured by a plurality of (four in the present embodiment) reflecting elements 30 that are spaced apart in the circumferential direction of the outer peripheral line of the projection region M, and the mounting substrate 2 includes the conductor patterns 22 and 22. Parts other than the connecting portions 22a and 22a are disposed between the reflecting elements 30 adjacent in the circumferential direction, and the end portions of the conductor patterns 22 and 22 opposite to the connecting portions 22a and 22a are for external connection. The electrodes 22b and 22b are configured. In the reflection part 3 described above, the four reflection elements 30 are formed independently for each of the four sides of the outer peripheral line of the projection area M of the LED chip 1 on the one surface of the mounting substrate 2, and in the circumferential direction. The lengths of the reflective elements 30 are all set to the same value. In the light emitting device A of the present embodiment, the reflection surface 31 of the reflection unit 3 is parallel to the side of the LED chip 1 in plan view.

ところで、反射部3は、上述のシリコン基板20を用いて形成されている。要するに、反射部3と実装基板2とで構成される構造体が1つのシリコン基板20を用いて形成されており、反射部3は、実装基板2と連続一体に形成されている。しかして、反射部3と実装基板2とが別部材であって両者を固着する必要がある場合に比べて製造工程の簡略化による低コスト化を図れる。ここで、シリコン基板20としては、主表面が(100)面の単結晶シリコン基板を用いている。   By the way, the reflection part 3 is formed using the above-mentioned silicon substrate 20. In short, a structure composed of the reflective portion 3 and the mounting substrate 2 is formed using one silicon substrate 20, and the reflective portion 3 is formed integrally with the mounting substrate 2. Thus, the cost can be reduced by simplifying the manufacturing process as compared with the case where the reflecting portion 3 and the mounting substrate 2 are separate members and both need to be fixed. Here, as the silicon substrate 20, a single crystal silicon substrate having a main surface of (100) plane is used.

ここにおいて、反射部3は、シリコン基板20を結晶異方性エッチングすることにより形成されており、反射面31の立ち上がり角度の再現性を高めることが可能となる。なお、本実施形態では、反射面31の立ち上がり角度が54.7°となるように結晶異方性エッチングを行う際のマスクをパターン設計してある。   Here, the reflecting portion 3 is formed by crystal anisotropic etching of the silicon substrate 20, and the reproducibility of the rising angle of the reflecting surface 31 can be improved. In the present embodiment, the mask for the crystal anisotropic etching is designed so that the rising angle of the reflecting surface 31 is 54.7 °.

なお、本実施形態では、反射部3を4つの反射エレメント30により構成してあるが、図2に示すように、反射部3を上記投影領域Mの外周線に沿った矩形枠状に形成してもよいし、図3に示すように、上記投影領域Mの外周線の隣り合う2辺に沿った平面視L字状の2つの反射エレメント30により構成してもよい。また、図4に示すように、反射部3をシリコン基板20とは別のシリコン基板30aを用いて実装基板2とは別に形成し、実装基板20に固着するようにしてもよい。また、反射部3の反射面31の立ち上がり角度も54.7°に限らず、例えば、図5に示すように、略45°にしてもよい。また、実装基板2および反射部3の材料はSiに限らず、例えば、セラミックスなどを用いてもよく、反射部3については、金属材料(例えば、Alなど)や高耐熱の樹脂(例えば、PBTなど)などを採用してもよい。   In the present embodiment, the reflecting portion 3 is constituted by four reflecting elements 30. However, as shown in FIG. 2, the reflecting portion 3 is formed in a rectangular frame shape along the outer peripheral line of the projection region M. Alternatively, as shown in FIG. 3, it may be constituted by two reflecting elements 30 having an L shape in plan view along two adjacent sides of the outer peripheral line of the projection region M. In addition, as shown in FIG. 4, the reflection portion 3 may be formed separately from the mounting substrate 2 using a silicon substrate 30 a different from the silicon substrate 20 and fixed to the mounting substrate 20. Further, the rising angle of the reflecting surface 31 of the reflecting portion 3 is not limited to 54.7 °, and may be approximately 45 ° as shown in FIG. 5, for example. Further, the material of the mounting substrate 2 and the reflective portion 3 is not limited to Si, and for example, ceramics or the like may be used. For the reflective portion 3, a metal material (for example, Al) or a high heat resistant resin (for example, PBT) Etc.) may be adopted.

以上説明した本実施形態の発光装置Aでは、反射部3の反射面31が、実装基板2の上記一表面におけるLEDチップ1の投影領域Mの外周線の4辺それぞれから立ち上がる形で形成されているので、LEDチップ1と反射部3とで決まる実効的な光源サイズの小型化を図れる。しかして、本実施形態の発光装置Aを例えば配光制御用部材(例えば、レンズ、反射鏡など)を有する照明器具に組み込んで使用する場合、光利用効率および配光制御用部材での配光制御性を向上させることが可能となる。   In the light emitting device A of the present embodiment described above, the reflecting surface 31 of the reflecting portion 3 is formed so as to rise from each of the four sides of the outer peripheral line of the projection region M of the LED chip 1 on the one surface of the mounting substrate 2. Therefore, the effective light source size determined by the LED chip 1 and the reflecting portion 3 can be reduced. Therefore, when the light-emitting device A of the present embodiment is used by being incorporated in a lighting fixture having a light distribution control member (for example, a lens, a reflector, etc.), for example, the light use efficiency and the light distribution by the light distribution control member Controllability can be improved.

ここで、図6に示すように発光装置Aの構造パラメータとして実装基板2におけるLEDチップ1の投影領域Mの外周線から反射部3までの距離W、反射部3の高さH、反射部3の反射面31の立ち上がり角度φを設定し、W=0μm、H=250μm、φ=54.7°とした実施例1と、W=150μm、H=250μm、φ=54.7°とした比較例1と、W=0μm、H=250μm、φ=45°とした実施例2と、W=150μm、H=250μm、φ=45°とした比較例2に関し、LEDチップ1の光軸上に受光面の中心が位置するように受光器(図示せず)を配置して、上記受光器の受光角2θを128°とし、上記投影領域Mの外周線の4辺それぞれから立ち上がる反射面31の上記周方向の長さを種々変化させた場合について、発光装置Aからの全光束に対して上記受光器で検出される光束割合(チップ直上方向の光束割合)を図7に示す。ここで、図7では、「イ」が実施例1のチップ直上方向の光束割合を、「ロ」が比較例1のチップ直上方向の光束割合を、「ハ」が実施例2のチップ直上方向の光束割合を、「ニ」が比較例1のチップ直上方向の光束割合を、それぞれ示している。図7における実施例1と比較例1との比較、実施例2と比較例2との比較から、反射部3の反射面31を実装基板2におけるLEDチップ1の投影領域Mの外周線から立ち上げることにより(つまり、W=0とすることにより)、指向性を強められることが分かる。また、平面視におけるLEDチップ1の4辺それぞれの長さは1mm(1000μm)であり、図7から、反射面31の長さをLEDチップ1の各辺の8割程度(つまり、800μm程度)としても大きな効果が得られることが分かる。   Here, as shown in FIG. 6, as the structural parameters of the light emitting device A, the distance W from the outer peripheral line of the projection area M of the LED chip 1 on the mounting substrate 2 to the reflecting portion 3, the height H of the reflecting portion 3, and the reflecting portion 3. Comparison of Example 1 in which the rising angle φ of the reflective surface 31 is set to W = 0 μm, H = 250 μm, φ = 54.7 °, and W = 150 μm, H = 250 μm, φ = 54.7 ° On Example 1, Example 2 in which W = 0 μm, H = 250 μm, φ = 45 °, and Comparative Example 2 in which W = 150 μm, H = 250 μm, φ = 45 °, A light receiver (not shown) is arranged so that the center of the light receiving surface is positioned, the light receiving angle 2θ of the light receiver is set to 128 °, and the reflecting surface 31 rising from each of the four sides of the outer peripheral line of the projection region M is arranged. When the circumferential length is changed variously, The light flux ratio detected by the light receiving device relative to the total flux from A (light flux ratio of the chip directly upward) shown in FIG. Here, in FIG. 7, “A” represents the luminous flux ratio in the direction directly above the chip of Example 1, “B” represents the luminous flux ratio in the direction immediately above the chip of Comparative Example 1, and “C” represents the direction directly above the chip of Example 2. “D” indicates the light flux ratio in the direction directly above the chip of Comparative Example 1. From the comparison between Example 1 and Comparative Example 1 in FIG. 7 and the comparison between Example 2 and Comparative Example 2, the reflective surface 31 of the reflective portion 3 stands from the outer peripheral line of the projection region M of the LED chip 1 on the mounting substrate 2. It can be seen that the directivity can be strengthened by raising it (that is, by setting W = 0). In addition, the length of each of the four sides of the LED chip 1 in plan view is 1 mm (1000 μm). From FIG. 7, the length of the reflecting surface 31 is about 80% of each side of the LED chip 1 (that is, about 800 μm). It can be seen that a great effect can be obtained.

また、本実施形態の発光装置Aでは、反射部3が、上記投影領域Mの外周線の周方向において離間した複数の反射エレメント30により構成され、実装基板2は、上記一表面側においてLEDチップ1に電気的に接続される導体パターン22,22が、前記周方向において隣り合う反射エレメント30間に配設されているので、実装基板2の上記一表面側にLEDチップ1に電気的に接続される導体パターン22,22を設けながらも、実効的な光源サイズの小型化を図れる。   Further, in the light emitting device A of the present embodiment, the reflecting portion 3 is configured by a plurality of reflecting elements 30 that are separated in the circumferential direction of the outer peripheral line of the projection region M, and the mounting substrate 2 is an LED chip on the one surface side. Since the conductive patterns 22 and 22 electrically connected to 1 are disposed between the reflective elements 30 adjacent in the circumferential direction, the conductive patterns 22 and 22 are electrically connected to the LED chip 1 on the one surface side of the mounting substrate 2. The effective light source size can be reduced while the conductor patterns 22 and 22 are provided.

ところで、実装基板2において、LEDチップ1に電気的に接続される給電用の貫通孔配線をLEDチップ1の投影領域に形成するようにすれば、図1に示した構成のようにLEDチップ1への給電用の導体パターン22,22をLEDチップ1の側方に設ける必要がなく、LEDチップ1から放射される光を効率良く外部へ取り出すことができる。また、実装器版2に上記貫通孔配線を形成しておけば、例えば照明器具などの器具本体に収納する回路基板に実装して用いる場合に、ワイヤボンディング工程が不要となるという利点がある。また、実装基板2において上記貫通孔配線をLEDチップ1の投影領域Mの外側に形成するようにすれば、実装基板2の他表面側におけるLEDチップ1の投影領域の全面を照明器具などの器具本体などに収納する回路基板の放熱用の導体パターンなどに半田などにより接合することが可能となり、放熱性を向上できる。   By the way, if the power supply through-hole wiring electrically connected to the LED chip 1 is formed in the projection area of the LED chip 1 in the mounting substrate 2, the LED chip 1 as in the configuration shown in FIG. Therefore, it is not necessary to provide the conductive patterns 22 and 22 for supplying power to the side of the LED chip 1, and the light emitted from the LED chip 1 can be efficiently extracted to the outside. Further, if the through-hole wiring is formed in the mounter plate 2, there is an advantage that a wire bonding step is not required when mounted on a circuit board housed in a fixture body such as a lighting fixture. Further, if the through-hole wiring is formed outside the projection area M of the LED chip 1 in the mounting substrate 2, the entire projection area of the LED chip 1 on the other surface side of the mounting substrate 2 is used as a fixture such as a lighting fixture. It becomes possible to bond to a conductive pattern for heat dissipation of a circuit board housed in the main body or the like by solder or the like, and heat dissipation can be improved.

(実施形態2)
本実施形態の発光装置Aの基本構成は、実施形態1と略同じであり、図8に示すように、実装基板2が一表面側に搭載されるユニット基板5と、LEDチップ1から放射された光によって励起されてLEDチップ1よりも長波長の光(つまり、LEDチップ1から放射される光とは異なる色の光)を放射する蛍光体を含有した透光性材料により形成されLEDチップ1をユニット基板5との間に囲む形でユニット基板5の上記一表面側に配設されたドーム状の色変換部材(波長変換部材)6とを備えている点が相違する。なお、実施形態1と同様の構成要素には同一の符号を付して説明を省略する。
(Embodiment 2)
The basic configuration of the light emitting device A of the present embodiment is substantially the same as that of the first embodiment. As shown in FIG. 8, the mounting substrate 2 is emitted from the LED chip 1 and the unit substrate 5 mounted on one surface side. LED chip formed of a translucent material containing a phosphor that emits light having a wavelength longer than that of LED chip 1 (ie, light having a color different from that emitted from LED chip 1) when excited by the reflected light. The difference is that a dome-shaped color conversion member (wavelength conversion member) 6 disposed on the one surface side of the unit substrate 5 is provided so as to surround 1 with the unit substrate 5. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted.

本実施形態の発光装置Aでは、LEDチップ1として、青色光を放射するGaN系青色LEDチップを用い、色変換部材6の蛍光体として、LEDチップ1から放射された青色光によって励起されてブロードな黄色系の光を放射する粒子状の黄色蛍光体を用いており、LEDチップ1から放射され色変換部材6を透過した青色光と、色変換部材6の黄色蛍光体から放射された黄色光とが色変換部材6の光出射面から出射されることとなり、白色光を得ることができる(なお、図8中の矢印は、LEDチップ1から放射される光の進行経路を模式的に示している)。   In the light emitting device A of the present embodiment, a GaN-based blue LED chip that emits blue light is used as the LED chip 1, and the phosphor of the color conversion member 6 is excited and broadened by the blue light emitted from the LED chip 1. The yellow light emitted from the LED chip 1 and transmitted through the color conversion member 6 and the yellow light emitted from the yellow phosphor of the color conversion member 6 are used. Is emitted from the light exit surface of the color conversion member 6 and white light can be obtained (note that the arrow in FIG. 8 schematically shows the traveling path of the light emitted from the LED chip 1). ing).

上述のユニット基板5は、熱伝導性材料(例えば、Cuなど)からなる伝熱板51と、絶縁性基材の一表面側に実施形態1で説明した導体パターン22,22(図1参照)にボンディングワイヤを介して電気的に接続される配線パターンが形成されるとともに実装基板2が内側に離間して配置される窓孔53が厚み方向に貫設されてなり伝熱板51に固着された配線基板52とで構成されており、LEDチップ1で発生した熱を実装基板2および伝熱板51を介して放熱させることができる。   The unit substrate 5 includes a heat transfer plate 51 made of a heat conductive material (for example, Cu) and the conductor patterns 22 and 22 described in the first embodiment on one surface side of the insulating base (see FIG. 1). A wiring pattern that is electrically connected via a bonding wire is formed, and a window hole 53 in which the mounting substrate 2 is spaced apart from the inside is formed in the thickness direction so as to be fixed to the heat transfer plate 51. The heat generated in the LED chip 1 can be dissipated through the mounting substrate 2 and the heat transfer plate 51.

また、色変換部材6は、シリコーン樹脂からなる透光性材料にLEDチップ1から放射された青色光によって励起されて黄色光を放射する粒子状の黄色蛍光体を分散させた混合材料を用いてドーム状に形成されている。なお、色変換部材6の材料として用いる透光性材料は、シリコーン樹脂に限らず、例えば、アクリル樹脂、ガラス、有機成分と無機成分とがnmレベルもしくは分子レベルで混合、結合した有機・無機ハイブリッド材料などを採用してもよい。また、色変換部材6の材料として用いる透光性材料に含有させる蛍光体も黄色蛍光体に限らず、色調整や演色性を高めるなどの目的で複数種類の蛍光体を用いてもよく、例えば、赤色蛍光体と緑色蛍光体とを用いることで演色性の高い白色光を得ることができる。ここで、複数種類の蛍光体を用いる場合には必ずしも発光色の異なる蛍光体の組み合わせに限らず、例えば、発光色はいずれも黄色で発光スペクトルの異なる複数種類の蛍光体を組み合わせてもよい。   Moreover, the color conversion member 6 uses the mixed material which disperse | distributed the particulate yellow fluorescent substance which is excited by the blue light radiated | emitted from LED chip 1 in the translucent material which consists of silicone resin, and radiates | emits yellow light. It is formed in a dome shape. The translucent material used as the material of the color conversion member 6 is not limited to a silicone resin. For example, an organic / inorganic hybrid in which an acrylic resin, glass, an organic component and an inorganic component are mixed and combined at the nm level or the molecular level. Materials etc. may be adopted. Further, the phosphor contained in the translucent material used as the material of the color conversion member 6 is not limited to the yellow phosphor, and a plurality of types of phosphors may be used for the purpose of improving color adjustment and color rendering. White light with high color rendering properties can be obtained by using a red phosphor and a green phosphor. Here, when a plurality of types of phosphors are used, the phosphor is not necessarily a combination of phosphors having different emission colors, and for example, a plurality of types of phosphors having an emission color of yellow and different emission spectra may be combined.

以上説明した本実施形態の発光装置Aにおいても、実施形態1と同様、反射部3の反射面31が、実装基板2の上記一表面におけるLEDチップ1の投影領域Mの外周線の4辺それぞれから立ち上がる形で形成されているので、LEDチップ1と反射部3とで決まる実効的な光源サイズの小型化を図れる。   Also in the light emitting device A of the present embodiment described above, as in the first embodiment, each of the four sides of the outer peripheral line of the projection region M of the LED chip 1 on the one surface of the mounting substrate 2 is the reflecting surface 31 of the reflecting portion 3. Therefore, the effective light source size determined by the LED chip 1 and the reflecting portion 3 can be reduced.

(実施形態3)
本実施形態の発光装置Aの基本構成は実施形態1と略同じであり、図9に示すように、実装基板2に実施形態1にて説明した導体パターン22,22(図1参照)それぞれに電気的に接続されシリコン基板20の厚み方向に貫通した貫通孔配線22c,22cが形成され、実装基板2の他表面側に各貫通孔配線22c,22cそれぞれと電気的に接続される金属材料(例えば、Cuなど)からなるリード端子7,8が固着されている点が相違する。なお、実施形態1と同様の構成要素には同一の符号を付して説明を省略する。
(Embodiment 3)
The basic configuration of the light emitting device A of the present embodiment is substantially the same as that of the first embodiment. As shown in FIG. 9, each of the conductor patterns 22 and 22 (see FIG. 1) described in the first embodiment is mounted on the mounting substrate 2. Through-hole wirings 22c and 22c that are electrically connected and penetrated in the thickness direction of the silicon substrate 20 are formed, and a metal material that is electrically connected to each of the through-hole wirings 22c and 22c on the other surface side of the mounting substrate 2 ( The difference is that lead terminals 7 and 8 made of, for example, Cu are fixed. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted.

ここで、各貫通孔配線22c,22cは、図示しない絶縁膜によりシリコン基板20と電気的に絶縁されている。また、リード端子7,8は、リードフレームを用いて形成してあり、シリコン基板20とは図示しない絶縁層によって電気的に絶縁されている。   Here, each through-hole wiring 22c, 22c is electrically insulated from the silicon substrate 20 by an insulating film (not shown). The lead terminals 7 and 8 are formed by using a lead frame, and are electrically insulated from the silicon substrate 20 by an insulating layer (not shown).

以上説明した本実施形態の発光装置Aにおいても、実施形態1と同様、反射部3の反射面31が、実装基板2の上記一表面におけるLEDチップ1の投影領域Mの外周線の4辺それぞれから立ち上がる形で形成されているので、LEDチップ1と反射部3とで決まる実効的な光源サイズの小型化を図れる。また、本実施形態の発光装置Aは、実装基板2において貫通孔配線22c,22cをLEDチップ1の投影領域Mの外側に形成してあるので、実装基板2の他表面側におけるLEDチップ1の投影領域の全面に一方のリード端子7の一部を配置することができ、当該リード端子7を照明器具などの器具本体などに収納する回路基板などに半田などにより接合することが可能となり、放熱性を向上できる。   Also in the light emitting device A of the present embodiment described above, as in the first embodiment, each of the four sides of the outer peripheral line of the projection region M of the LED chip 1 on the one surface of the mounting substrate 2 is the reflecting surface 31 of the reflecting portion 3. Therefore, the effective light source size determined by the LED chip 1 and the reflecting portion 3 can be reduced. In the light emitting device A of the present embodiment, the through-hole wirings 22c and 22c are formed outside the projection area M of the LED chip 1 in the mounting substrate 2, so that the LED chip 1 on the other surface side of the mounting substrate 2 A part of one of the lead terminals 7 can be disposed on the entire surface of the projection region, and the lead terminal 7 can be joined to a circuit board or the like housed in a fixture body such as a lighting fixture by soldering or the like. Can be improved.

なお、上記各実施形態1〜3では、反射部3の反射面31が、実装基板2の上記一表面におけるLEDチップ1の投影領域Mの外周線の4辺それぞれから立ち上がる形で形成されているが、LEDチップ1の設置公差などを考慮して上記外周線よりもやや外側から反射面31が立ち上がるようにしてもよい。   In the first to third embodiments, the reflecting surface 31 of the reflecting portion 3 is formed so as to rise from each of the four sides of the outer peripheral line of the projection region M of the LED chip 1 on the one surface of the mounting substrate 2. However, in consideration of the installation tolerance of the LED chip 1 and the like, the reflecting surface 31 may rise from a slightly outside of the outer peripheral line.

実施形態1の発光装置を示し、(a)は概略斜視図、(b)は概略断面図、(c)は要部概略平面図である。The light-emitting device of Embodiment 1 is shown, (a) is a schematic perspective view, (b) is a schematic sectional drawing, (c) is a principal part schematic plan view. 同上の他の構成例を示す要部概略斜視図である。It is a principal part schematic perspective view which shows the other structural example same as the above. 同上の他の構成例を示す要部概略斜視図である。It is a principal part schematic perspective view which shows the other structural example same as the above. 同上の他の構成例の要部分解斜視図である。It is a principal part disassembled perspective view of the other structural example same as the above. 同上の他の構成例を示す要部概略斜視図である。It is a principal part schematic perspective view which shows the other structural example same as the above. 同上の発光装置の構造パラメータの説明図である。It is explanatory drawing of the structural parameter of a light-emitting device same as the above. 同上の発光装置の特性説明図である。It is characteristic explanatory drawing of a light-emitting device same as the above. 実施形態2の発光装置を示す概略断面図である。6 is a schematic cross-sectional view showing a light emitting device of Embodiment 2. FIG. 実施形態3の発光装置を示す概略断面図である。6 is a schematic cross-sectional view showing a light emitting device according to Embodiment 3. FIG. 従来例の発光装置の概略分解斜視図である。It is a general | schematic disassembled perspective view of the light-emitting device of a prior art example. 同上を示し、(a)は概略平面図、(b)は(a)のB−B’概略断面図である。The same as the above, (a) is a schematic plan view, and (b) is a schematic cross-sectional view along B-B 'of (a).

符号の説明Explanation of symbols

1 LEDチップ
2 実装基板
3 反射部
20 シリコン基板
30 反射エレメント
31 反射面
A 発光装置
M 投影領域
DESCRIPTION OF SYMBOLS 1 LED chip 2 Mounting board 3 Reflection part 20 Silicon substrate 30 Reflective element 31 Reflective surface A Light-emitting device M Projection area

Claims (5)

矩形板状のLEDチップと、LEDチップが一表面側に実装された実装基板と、LEDチップから側方へ放射された光をLEDチップにおける実装基板側とは反対側へ反射する反射面を有する反射部とを備え、反射部の反射面が、実装基板の前記一表面におけるLEDチップの投影領域の外周線の4辺それぞれから立ち上がる形で形成されてなることを特徴とする発光装置。   A rectangular plate-shaped LED chip, a mounting substrate on which the LED chip is mounted on one surface side, and a reflection surface that reflects light emitted from the LED chip to the side toward the side opposite to the mounting substrate side of the LED chip A light emitting device comprising: a reflection portion, wherein the reflection surface of the reflection portion is formed so as to rise from each of the four sides of the outer peripheral line of the projection area of the LED chip on the one surface of the mounting substrate. 前記反射部は、前記外周線の周方向において離間した複数の反射エレメントにより構成され、前記実装基板は、前記一表面側において前記LEDチップに電気的に接続される導体パターンが、前記周方向において隣り合う反射エレメント間に配設されてなることを特徴とする請求項1記載の発光装置。   The reflective portion is configured by a plurality of reflective elements spaced apart in the circumferential direction of the outer circumferential line, and the mounting substrate has a conductor pattern electrically connected to the LED chip on the one surface side in the circumferential direction. The light emitting device according to claim 1, wherein the light emitting device is disposed between adjacent reflecting elements. 前記実装基板は、前記LEDチップに電気的に接続される給電用の貫通孔配線が形成されてなることを特徴とする請求項1記載の発光装置。   The light-emitting device according to claim 1, wherein the mounting substrate is formed with a power supply through-hole wiring electrically connected to the LED chip. 前記反射部は、前記実装基板と連続一体に形成されてなることを特徴とする請求項1ないし請求項3のいずれか1項に記載の発光装置。   4. The light emitting device according to claim 1, wherein the reflecting portion is formed integrally with the mounting substrate. 前記反射部および前記実装基板は、シリコン基板を用いて形成されてなることを特徴とする請求項1ないし請求項4のいずれか1項に記載の発光装置。   5. The light emitting device according to claim 1, wherein the reflection portion and the mounting substrate are formed using a silicon substrate.
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KR20150025219A (en) * 2013-08-28 2015-03-10 삼성디스플레이 주식회사 Light emitting module, backlight unit comprising the same and liquid crystal display comprising the same
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