JP2010062265A5 - - Google Patents
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- JP2010062265A5 JP2010062265A5 JP2008225157A JP2008225157A JP2010062265A5 JP 2010062265 A5 JP2010062265 A5 JP 2010062265A5 JP 2008225157 A JP2008225157 A JP 2008225157A JP 2008225157 A JP2008225157 A JP 2008225157A JP 2010062265 A5 JP2010062265 A5 JP 2010062265A5
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- contact
- structure portion
- variable resistor
- resistance element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008225157A JP2010062265A (ja) | 2008-09-02 | 2008-09-02 | 可変抵抗素子及びその製造方法、並びにその駆動方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008225157A JP2010062265A (ja) | 2008-09-02 | 2008-09-02 | 可変抵抗素子及びその製造方法、並びにその駆動方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010062265A JP2010062265A (ja) | 2010-03-18 |
JP2010062265A5 true JP2010062265A5 (fr) | 2010-11-18 |
Family
ID=42188770
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008225157A Pending JP2010062265A (ja) | 2008-09-02 | 2008-09-02 | 可変抵抗素子及びその製造方法、並びにその駆動方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2010062265A (fr) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011030559A1 (fr) * | 2009-09-14 | 2011-03-17 | パナソニック株式会社 | Dispositif de mémoire non volatile et procédé de fabrication associé |
US9627443B2 (en) * | 2011-06-30 | 2017-04-18 | Crossbar, Inc. | Three-dimensional oblique two-terminal memory with enhanced electric field |
WO2013046603A1 (fr) * | 2011-09-27 | 2013-04-04 | パナソニック株式会社 | Élément de mémoire non volatile, dispositif à mémoire non volatile et son procédé de fabrication |
US8853099B2 (en) * | 2011-12-16 | 2014-10-07 | Intermolecular, Inc. | Nonvolatile resistive memory element with a metal nitride containing switching layer |
JP6112106B2 (ja) * | 2012-03-16 | 2017-04-12 | 日本電気株式会社 | 抵抗変化素子、その抵抗変化素子を有する半導体装置、その半導体装置の製造方法およびその抵抗変化素子を用いたプログラミング方法 |
US9685608B2 (en) | 2012-04-13 | 2017-06-20 | Crossbar, Inc. | Reduced diffusion in metal electrode for two-terminal memory |
WO2014076869A1 (fr) * | 2012-11-14 | 2014-05-22 | パナソニック株式会社 | Élément de mémoire non volatile, et procédé de fabrication de celui-ci |
US9985203B2 (en) * | 2013-11-15 | 2018-05-29 | Taiwan Semiconductor Manufacturing Company | Resistive random access memory (RRAM) with improved forming voltage characteristics and method for making |
US10290801B2 (en) | 2014-02-07 | 2019-05-14 | Crossbar, Inc. | Scalable silicon based resistive memory device |
US20160181517A1 (en) * | 2014-12-23 | 2016-06-23 | Silicon Storage Technology, Inc. | Geometrically Enhanced Resistive Random Access Memory (RRAM) Cell And Method Of Forming Same |
US10615339B2 (en) | 2016-03-30 | 2020-04-07 | Nec Corporation | Variable resistance element and method for fabricating the variable resistance element |
KR102421726B1 (ko) * | 2017-09-25 | 2022-07-15 | 삼성전자주식회사 | 이미지 센서 |
US11094883B2 (en) | 2019-10-31 | 2021-08-17 | International Business Machines Corporation | Structure and method to fabricate resistive memory with vertical pre-determined filament |
JP2021129071A (ja) * | 2020-02-17 | 2021-09-02 | キオクシア株式会社 | 半導体記憶装置および半導体記憶装置の製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101100427B1 (ko) * | 2005-08-24 | 2011-12-30 | 삼성전자주식회사 | 이온 전도층을 포함하는 불휘발성 반도체 메모리 장치와 그제조 및 동작 방법 |
JP5217259B2 (ja) * | 2007-06-07 | 2013-06-19 | 富士通株式会社 | 半導体装置及びその製造方法 |
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2008
- 2008-09-02 JP JP2008225157A patent/JP2010062265A/ja active Pending
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