JP2010062265A5 - - Google Patents

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Publication number
JP2010062265A5
JP2010062265A5 JP2008225157A JP2008225157A JP2010062265A5 JP 2010062265 A5 JP2010062265 A5 JP 2010062265A5 JP 2008225157 A JP2008225157 A JP 2008225157A JP 2008225157 A JP2008225157 A JP 2008225157A JP 2010062265 A5 JP2010062265 A5 JP 2010062265A5
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JP
Japan
Prior art keywords
electrode
contact
structure portion
variable resistor
resistance element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008225157A
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English (en)
Japanese (ja)
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JP2010062265A (ja
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Publication date
Application filed filed Critical
Priority to JP2008225157A priority Critical patent/JP2010062265A/ja
Priority claimed from JP2008225157A external-priority patent/JP2010062265A/ja
Publication of JP2010062265A publication Critical patent/JP2010062265A/ja
Publication of JP2010062265A5 publication Critical patent/JP2010062265A5/ja
Pending legal-status Critical Current

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JP2008225157A 2008-09-02 2008-09-02 可変抵抗素子及びその製造方法、並びにその駆動方法 Pending JP2010062265A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008225157A JP2010062265A (ja) 2008-09-02 2008-09-02 可変抵抗素子及びその製造方法、並びにその駆動方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008225157A JP2010062265A (ja) 2008-09-02 2008-09-02 可変抵抗素子及びその製造方法、並びにその駆動方法

Publications (2)

Publication Number Publication Date
JP2010062265A JP2010062265A (ja) 2010-03-18
JP2010062265A5 true JP2010062265A5 (fr) 2010-11-18

Family

ID=42188770

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008225157A Pending JP2010062265A (ja) 2008-09-02 2008-09-02 可変抵抗素子及びその製造方法、並びにその駆動方法

Country Status (1)

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JP (1) JP2010062265A (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011030559A1 (fr) * 2009-09-14 2011-03-17 パナソニック株式会社 Dispositif de mémoire non volatile et procédé de fabrication associé
US9627443B2 (en) * 2011-06-30 2017-04-18 Crossbar, Inc. Three-dimensional oblique two-terminal memory with enhanced electric field
WO2013046603A1 (fr) * 2011-09-27 2013-04-04 パナソニック株式会社 Élément de mémoire non volatile, dispositif à mémoire non volatile et son procédé de fabrication
US8853099B2 (en) * 2011-12-16 2014-10-07 Intermolecular, Inc. Nonvolatile resistive memory element with a metal nitride containing switching layer
JP6112106B2 (ja) * 2012-03-16 2017-04-12 日本電気株式会社 抵抗変化素子、その抵抗変化素子を有する半導体装置、その半導体装置の製造方法およびその抵抗変化素子を用いたプログラミング方法
US9685608B2 (en) 2012-04-13 2017-06-20 Crossbar, Inc. Reduced diffusion in metal electrode for two-terminal memory
WO2014076869A1 (fr) * 2012-11-14 2014-05-22 パナソニック株式会社 Élément de mémoire non volatile, et procédé de fabrication de celui-ci
US9985203B2 (en) * 2013-11-15 2018-05-29 Taiwan Semiconductor Manufacturing Company Resistive random access memory (RRAM) with improved forming voltage characteristics and method for making
US10290801B2 (en) 2014-02-07 2019-05-14 Crossbar, Inc. Scalable silicon based resistive memory device
US20160181517A1 (en) * 2014-12-23 2016-06-23 Silicon Storage Technology, Inc. Geometrically Enhanced Resistive Random Access Memory (RRAM) Cell And Method Of Forming Same
US10615339B2 (en) 2016-03-30 2020-04-07 Nec Corporation Variable resistance element and method for fabricating the variable resistance element
KR102421726B1 (ko) * 2017-09-25 2022-07-15 삼성전자주식회사 이미지 센서
US11094883B2 (en) 2019-10-31 2021-08-17 International Business Machines Corporation Structure and method to fabricate resistive memory with vertical pre-determined filament
JP2021129071A (ja) * 2020-02-17 2021-09-02 キオクシア株式会社 半導体記憶装置および半導体記憶装置の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101100427B1 (ko) * 2005-08-24 2011-12-30 삼성전자주식회사 이온 전도층을 포함하는 불휘발성 반도체 메모리 장치와 그제조 및 동작 방법
JP5217259B2 (ja) * 2007-06-07 2013-06-19 富士通株式会社 半導体装置及びその製造方法

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