JP2010046720A - Microstructure and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To form a microstructure of a high aspect ratio having thickness of 10 μm class to be used in an MEMS (Micro Electro Mechanical System), etc. into a desired dimension with high accuracy. <P>SOLUTION: Guide parts 106 extending in the same direction as that of a spring part 104 and having the same linear shape as that of the spring part 104 are provided on both sides of the spring part 104. For example, each of the guide parts 106 is formed to have a width of about 4 to 5 μm in the same way as the spring part 104 and have thickness of about 15 to 18 μm, and is arranged to be separated from the spring part 104 by about 10 to 15 μm, for instance. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a microstructure having a movable part connected to a linear connecting part and a method for manufacturing the same.

  In the technology of MEMS (Micro Electro Mechanical Systems), a movable microstructure is an important element. As the movable microstructure, for example, as shown in FIGS. 14A and 14B, a support portion 1402 is provided on a substrate 1401, and a pair of fixing portions 1403 supported and fixed on the support portion 1402 is provided. In addition, a spring part (connecting part) 1404 is connected to the fixed part 1403, and a movable part 1405 is connected to the pair of spring parts 1404, and is supported on the substrate 1401 at a distance. The movable part 1405 includes an etching hole 1405a used at the time of manufacturing. In this microstructure, the movable portion 1405 can be displaced in the vertical direction on the paper surface of FIG. 14A by deformation of the pair of spring portions 1404 functioning as springs.

  Next, the manufacture of the fine structure described above will be briefly described. First, the support portion 1402 is formed on the substrate 1401. For example, the support part 1402 can be formed by selectively growing an Au pattern by electrolytic plating using a seed layer made of a laminated film of a Ti thin film and an Au thin film. The Ti thin film functions as an adhesion layer that improves the adhesion between the substrate 1401 and the Au thin film. Next, a space between the support portions 1402 is filled with a material such as an organic resin, for example, and a sacrificial film 1451 is formed on the substrate 1401 between the support portions 1402 as shown in FIG. 14C. In FIG. 14C, the portion is shown in an enlarged manner, and for example, the support portion 1402 is not shown.

  Next, a seed layer 1452 made of a Ti thin film with a thickness of 0.1 μm and an Au thin film with a thickness of 0.1 μm formed thereon is formed on the sacrificial film 1451 and the support portion 1402, and subsequently, the seed layer 1452. A photoresist film is formed on the substrate. The Ti thin film and the Au thin film are formed by, for example, a vacuum deposition method or a sputtering method. Next, the formed photoresist film is patterned by a known photolithography technique to form a resist layer 1453 having an opening pattern 1453a. For example, an opening pattern 1453a having an opening dimension (width) of 5 μm is formed in the resist layer 1453 having a thickness of 20 μm in the cross section shown in FIG. 14C. The cross section shown in FIG. 14C shows the portion that becomes the spring portion 1404, and the opening pattern of the portion that becomes the fixed portion 1403 and the movable portion 1405 is also formed in another region (not shown) at the same time. It is formed continuously.

  Next, by depositing Au on the seed layer 1452 exposed in the opening pattern 1453a by an electrolytic plating method, a metal pattern made of Au is formed in the opening pattern 1453a. At this time, due to the plasticity of the resist layer 1453 made of resin, the metal pattern growing in the opening pattern 1453a gradually expands the dimension in plan view, and as shown in FIG. A pattern 1454 is formed.

  Next, after removing (peeling) the resist layer 1453, the seed layer 1452 is etched away using the metal pattern 1454 as a mask, and then the sacrificial film 1451 is removed, as shown in FIG. 14E. 1402, a fixed part 1403, a spring part 1404, and a movable part 1405 not shown in FIG. 14E are formed. The spring part 1404 and the movable part 1405 formed on the sacrificial film 1451 are formed on the substrate 1401 so as to be separated (see Non-Patent Document 1).

N. Sato, et al., "Monolithic Integration Fabrication Process of Thermoelectric and Vibrational Devices for Microelectromechanical System Power Generator", Jpn.J.Appl.Phys., Vol.46, No.9A, pp.6062-6067, 2007.

  By the way, as described above, the spring portion 1404 is formed in a high aspect ratio with a thickness exceeding 10 μm with respect to a width of about 5 μm. When the plating is grown to such a high aspect ratio that the thickness is larger than the width, in this process, the resist layer having plasticity gradually deforms due to the stress that spreads in the plane direction of the plating growth, As described above, the cross-sectional view has an inversely tapered shape. As a result, the spring portion 1404 is formed in a state where a part of the design dimension is widened, and the spring constant is different from the design value. For example, the spring constant increases with respect to the design value. In such a state, the movable part 1405 operates at a frequency higher than a desired frequency, which causes a problem.

  The above-described problem of the spring portion also occurs when the spring portion is formed by a photolithography technique and an etching technique. For example, the fine structure shown in FIGS. 15A and 15B in which the spring portion is formed by processing silicon by deep dry etching technology has the same problem. The microstructure includes, for example, a support portion 1502 made of silicon oxide on a substrate 1501 made of single crystal silicon, and a pair of fixing portions 1503 supported and fixed on the support portion 1502. In addition, a spring portion (connecting portion) 1504 is connected to the fixed portion 1503, and a movable portion 1505 is connected to the pair of spring portions 1504, and is supported on the substrate 1501 at a distance. The movable part 1505 includes an etching hole 1505a used at the time of manufacture.

  The pair of fixed portions 1503, the pair of spring portions 1504, and the movable portion 1505 are formed on the silicon layer 1512 and are integrated. In this microstructure, the movable portion 1505 can be displaced in the vertical direction in FIG. 15A by deformation of the pair of spring portions 1504 functioning as springs.

  This fine structure can be manufactured using, for example, a so-called SOI substrate including a silicon (SOI) layer on a substrate portion made of single crystal silicon via a buried insulating layer. In the case of manufacturing using an SOI substrate in this manner, the substrate 1501 corresponds to the substrate portion, the support portion 1502 is formed of a buried insulating layer, and the fixed portion 1503, the spring portion 1504, and the movable portion 1505 are formed of a silicon layer. The

  The production will be briefly described. First, as shown in FIG. 15C, a photoresist film is formed on a substrate 1501, a buried insulating layer 1511, and a silicon layer 1512 constituting an SOI substrate. By patterning the film by a known photolithography technique, a resist layer 1551 having a pattern 1551a is formed. For example, a 5 μm thick resist layer 1551 having a linear pattern 1551a and a rectangular pattern 1551b having a width of 5 μm is formed on a silicon layer 1512 having a layer thickness of 15 μm.

  The cross section shown in FIG. 15C shows a portion to be the spring portion 1504, the pattern 1551a is a mask portion for forming the spring portion 1504, and the pattern 1551b is a mask portion for forming the fixing portion 1503. In addition, a pattern serving as a mask portion for forming the movable portion 1505 is simultaneously formed in another region (not shown), and these patterns are integrally formed continuously.

  Next, by selectively etching the silicon layer 1512 using the resist layer 1551 as a mask by ICP-RIE (Inductively Coupled Plasma-Reactive Ion Etching), as shown in FIG. 15D, the spring portion 1504 and the fixed portion 1503 are formed. Form. At the time of this etching, there is no other pattern on the side portion of the spring portion 1504 (pattern 1551a). For this reason, in this type of etching, as shown in FIG. 15D, the shape of the cross section perpendicular to the direction in which the spring portion 1504 extends becomes an inversely tapered shape that becomes thinner toward the substrate 1501 away from the pattern 1551a.

  Next, after removing (peeling) the resist layer 1551, the embedded insulating layer 1511 is removed by etching using a pattern formed on the silicon layer 1512 such as the spring portion 1504 and the fixing portion 1503 as a mask, and is supported below the fixing portion 1503. A portion 1502 is formed. By this etching, the buried insulating layer 1511 is removed and a space is formed between the lower portion of the pattern having a small width dimension such as the spring portion 1504 and the substrate 1501. Similarly, a space is also formed below the movable portion 1505 having the etching hole 1505a. In other words, the spring portion 1504 and the movable portion 1505 are formed on the substrate 1501 so as to be separated from each other.

  As described above, even when the spring part is formed by the photolithography technique and the etching technique, the spring part 1504 is formed in a state where a part of the design dimension is widened. Is formed with a different spring constant.

  The present invention has been made to solve the above problems, and a high-aspect-ratio microstructure having a thickness of 10 μm used in MEMS or the like is high with respect to a desired dimension. It aims at making it possible to form with accuracy.

  The fine structure according to the present invention connects a fixed part disposed on a substrate, a movable part spaced apart on the substrate and displaced in the plane direction of the substrate, and the fixed part and the movable part. The connecting portion deforms in a plane in which the movable portion is displaced, and a guide portion that is spaced apart from the connecting portion on the side of the connecting portion and disposed on the substrate at the same height as the connecting portion.

  In the above microstructure, the guide portion may be fixed on the substrate. Moreover, the guide part may be connected to the selected one of the fixed part and the movable part. Moreover, the guide part may be connected to the connection part via the connection part. In this case, the guide portion may be formed so as to be bent away from the connecting portion as it is away from the connecting portion.

  Further, in the above microstructure, the guide portion only needs to be disposed on the side of the connecting portion so as to be in contact with the connecting portion within a range in which the connecting portion is elastically deformed. Moreover, the guide part is good to be formed in the both sides of a connection part.

  Moreover, the manufacturing method of the microstructure according to the present invention includes a step of forming a support portion on a substrate, a structure including a fixed portion, a movable portion, and a connecting portion that connects the fixed portion and the movable portion. And the structure is formed by selectively growing a metal pattern by a plating method using a resist layer having an opening pattern. When a metal plate is formed by a plating method, a guide portion is formed on the substrate at the same height as the connecting portion, spaced apart from the connecting portion on the side of the connecting portion, thereby forming a structure and a guide portion. This is a method in which the resist layer is removed later.

  The fine structure manufacturing method according to the present invention includes a fixed part disposed on the substrate, a movable part that is spaced apart from the substrate and is displaced in the plane direction of the substrate, and the fixed part and the movable part. A connecting part that is deformed in a plane in which the movable part is displaced by connecting the parts, and a guide part that is spaced apart from the connecting part on the side of the connecting part and disposed on the substrate at the same height as the connecting part. A manufacturing method for manufacturing a fine structure including a step of forming a support portion on a substrate, and an opening pattern corresponding to a fixed portion, a connecting portion, a movable portion, and a guide portion on the support portion. Forming a resist layer so that an opening pattern corresponding to the fixed portion is disposed on the support portion, forming a metal pattern by plating within the opening pattern of the resist layer, and removing the resist layer Fixed parts composed of metal patterns Parts, a movable part, and a method for the step and to include at least a state in which the guide portion is formed. In addition, it is good to form a guide part in the both sides of a connection part.

  As described above, according to the present invention, since the guide part is provided on the substrate at the same height as the connection part and spaced apart from the connection part on the side of the connection part, the MEMS or the like is used. It is possible to obtain an excellent effect that the high-aspect-ratio microstructure (connecting portion) having a thickness of 10 μm used can be formed with high accuracy with respect to a desired dimension.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[Embodiment 1]
First, Embodiment 1 of the present invention will be described with reference to FIGS. 1A, 1B, 1C, 1D, and 1E. FIG. 1A is a plan view illustrating a configuration example of a fine structure according to Embodiment 1 of the present invention, and FIG. 1B is a cross-sectional view illustrating a configuration example of the fine structure according to Embodiment 1 of the present invention. FIG. 1B shows a cross section taken along line BB of FIG. 1A. 1C, 1D, and 1E are process diagrams showing an example of a manufacturing method. These show the cross section of the EE line of FIG. 1A.

  The microstructure in this embodiment includes a support portion 102 on a substrate 101 and a pair of fixing portions 103 that are supported and fixed on the support portion 102. In addition, a linear spring portion (connecting portion) 104 is connected to each of the fixed portions 103, and a movable portion 105 is connected to the pair of spring portions 104, and is supported on the substrate 101 at a distance. . For example, the fixed portion 103, the spring portion 104, and the movable portion 105 are integrally formed and have a thickness of about 15 to 18 μm. The spring portion 104 has a width smaller than the thickness, and is formed to have a width of about 4 to 5 μm, for example. The movable portion 105 includes an etching hole 105a that is used during manufacturing.

  In this fine structure, the movable portion 105 can be displaced in the vertical direction of the drawing in FIG. 1A by deformation of the pair of spring portions 104 functioning as springs. As described above, the width of the spring portion 104 is smaller than the thickness. In other words, the spring portion 104 has a thickness larger than the width. It tends to be deformed (in the vertical direction in FIG. 1A).

  In addition, in the microstructure of the present embodiment, linear guide portions 106 similar to the spring portions 104 extending in the same direction as the spring portions 104 are provided on both sides of the spring portions 104. For example, the guide portion 106 is formed to have a width of about 4 to 5 μm and a thickness of about 15 to 18 μm similarly to the spring portion 104, and is spaced apart from the spring portion 104 by, for example, about 10 to 15 μm. Although not shown in FIG. 1A, the guide portion 106 is disposed on the substrate 101 while being supported by a support base, and is disposed on the substrate 101 at the same height as the spring portion 104. In other words, the guide part 106 is arranged on a plane on which the spring part 104 is arranged parallel to the substrate plane. In the present embodiment, the guide part 106 is fixed and arranged on the substrate 101.

  Moreover, in this Embodiment, the surface where the guide part 106 and the spring part 104 oppose is made into the mutually parallel relationship. Further, the guide part 106 is separated from the spring part 104 to such an extent that it does not come into contact with the spring part 104 that is deformed within a desired displacement range of the movable part 105.

  According to the microstructure of the present embodiment, since the guide portion 106 is provided on the side of the spring portion 104, when the spring portion 104 is formed by plating, for example, as will be described later, The cross-sectional shape is suppressed from becoming wider as it is separated from the substrate 101, and the spring portion 104 can be formed to a desired dimension with high accuracy. If the spring part 104 can be formed in a desired dimension as described above, for example, a fine structure including the movable part 105 that vibrates with a desired frequency characteristic can be manufactured.

  Next, a method for manufacturing the microstructure in this embodiment will be described with reference to FIGS. 1C, 1D, and 1E. Below, it demonstrates focusing on the part of the spring part 104. FIG. First, as shown in FIG. 1C, a support base 112 is formed on the substrate 101. At this time, the support portion 102 is formed on the substrate 101 in another region not shown in FIG. 1C. In these methods, a seed layer is formed, a resist layer having an opening pattern is formed at locations to be the support portion 102 and the support base 112, and metal (Au) is deposited (grown) on the seed layer of the opening pattern by plating. After the metal pattern is formed and the resist layer is removed, the seed layer can be removed by etching using the metal pattern as a mask.

  Next, a sacrificial layer 151 is formed so as to fill the substrate 101 around the support table 112 (support unit 102). For example, the sacrificial layer 151 can be formed by applying a photosensitive polyimide resin and patterning this coating film by a known photolithography technique to expose the upper portion of the support base 112 (support portion 102).

  Next, a seed layer 152 is formed on the upper surface of the sacrificial layer 151 and the exposed support base 112 (support portion 102). For example, a Ti thin film with a thickness of 0.1 μm and an Au thin film with a thickness of 0.1 μm may be sequentially stacked by a vacuum deposition method to form the seed layer 152. The Ti thin film functions as an adhesion layer that improves adhesion between a lower layer such as the upper surface of the sacrificial layer 151 and the upper Au thin film.

  Next, a photoresist film is formed on the seed layer 152 and patterned by a known photolithography technique, thereby forming a resist layer 153 having an opening pattern 153a and an opening pattern 153b. For example, the resist layer 153 is formed to have a layer thickness of about 20 μm, and includes an opening pattern 153 a and an opening pattern 153 b having an opening width of about 5 μm. Moreover, the opening pattern 153a and the opening pattern 153b are spaced apart by about 10 to 15 μm, for example. Note that the resist layer 153 also includes an opening pattern for forming the fixed portion 103 and the movable portion 105 in another region (not shown).

  Next, by forming a gold plating film by a well-known electrolytic plating method, the metal pattern 154 and the metal are formed on the seed layer 152 inside the opening pattern 153a and the opening pattern 153b as shown in FIG. 1D. A pattern 156 is formed. For example, the metal pattern 154 and the metal pattern 156 are formed to a thickness of about 15 to 18 μm. At this time, metal patterns 156 are formed on both sides of the metal pattern 154 simultaneously with the metal pattern 154. Even in the above-described opening pattern formed in another region (not shown) of the resist layer 153, the metal pattern that forms the fixed portion 103 and the movable portion 105 is formed together with the metal pattern 154 and the metal pattern 156.

  Here, attention is focused on the resist layer 153 in a region sandwiched between the metal pattern 154 and the metal pattern 156. In this region, an opposing force is applied between the stress that the metal pattern 154 tends to spread toward the metal pattern 156 and the stress that the metal pattern 156 tends to spread toward the metal pattern 154. For example, when the widths of the metal pattern 154 and the metal pattern 156 are equal, the stress acting on the opposite side is equal, and the state is such that they are offset across the region.

  Therefore, in the process of growth of the metal pattern 154 and the metal pattern 156 by plating, the spread of the metal pattern 154 toward the metal pattern 156 and the spread of the metal pattern 156 toward the metal pattern 154 are suppressed. become. As a result, in the metal pattern 154 in which the metal patterns 156 are formed on both sides, the cross-sectional width perpendicular to the extending direction is suppressed from changing from the substrate 101 side to the upper side, and the cross-sectional shape is formed in a rectangular shape. Will come to be. In other words, the width of the metal pattern 154 is formed to be approximately equal to the width of the opening pattern 153a of the resist layer 153, and is formed with high accuracy with respect to a desired dimension. The other side surface of the metal pattern 156 that is not the metal pattern 154 side does not have a force that opposes the stress that the metal pattern 156 tries to spread on this side. To go.

  After forming the metal pattern 154 and the metal pattern 156 by plating as described above, first, the resist layer 153 is removed. When the resist layer 153 is removed, the formed metal pattern 154, the metal pattern 156, and the seed layer 152 in a region other than the metal pattern that becomes the fixed portion 103 and the movable portion 105 described above are exposed. Etching is removed using the metal pattern 156 as a mask. For example, the upper Au thin film of the seed layer 152 may be removed by wet etching using dilute aqua regia, and the lower titanium thin film may be removed by wet etching using a hydrofluoric acid solution.

  By selectively removing the seed layer 152 as described above, the underlying sacrificial layer 151 is partially exposed, and these are removed, for example, by ashing using oxygen gas plasma. By removing the sacrificial layer 151 in this way, as shown in FIG. 1E, the support portion 102 and the support base 112 are formed on the substrate 101, the fixing portion 103 is formed on the support portion 102, and The spring part 104 connected to the fixed part 103 is formed. Further, on both sides of the spring portion 104, guide portions 106 supported by the support base 112 are formed. Similarly, in other regions not shown in FIG. 1E, a movable portion 105 connected to the spring portion 104 is formed.

  In the above description, the guide unit 106 is supported and fixed on the substrate 101 using the support table 112. However, the present invention is not limited to this, and the guide unit 106 is manufactured without forming the support table 112. You may do it. In this case, since the guide portion 106 is supported on the substrate 101 by the sacrificial layer 151, the sacrificial layer 151 is removed from above the substrate 101 when the sacrificial layer 151 is removed, and the manufacturing of the microstructure is completed. It will not exist at that time.

[Embodiment 2]
Next, Embodiment 2 of the present invention will be described with reference to FIGS. 2A, 2B, 2C, 2D, and 3. FIG. FIG. 2A is a plan view showing a configuration example of a fine structure according to Embodiment 2 of the present invention. 2B, 2C, and 2D are process diagrams illustrating an example of a manufacturing method. These show the cross section of the DD line of FIG. 2A. FIG. 3 is a block diagram showing a partial configuration of the fine structure according to the second embodiment of the present invention.

  The microstructure in this embodiment includes a support portion 102 on a substrate 101 and a pair of fixing portions 103 that are supported and fixed on the support portion 102. In addition, a linear spring portion (connecting portion) 104 is connected to each of the fixed portions 103, and a movable portion 105 is connected to the pair of spring portions 104, and is supported on the substrate 101 at a distance. . The movable portion 105 includes an etching hole 105a that is used during manufacturing. In this microstructure, the movable portion 105 can be displaced in the vertical direction on the paper surface of FIG. 2A by deformation of the pair of spring portions 104 functioning as springs. These are the same as those in the first embodiment.

  In the microstructure of the present embodiment, on both sides of the spring portion 104, a linear guide portion 206 similar to the spring portion 104 extending in the same direction as the spring portion 104 is provided, and the guide portion 206 is a fixed portion. It is connected to 103 and supported. Also in the present embodiment, the guide portion 206 is disposed on the substrate 101 at the same height as the spring portion 104. Further, the guide part 206 is separated from the spring part 104 to such an extent that it does not contact the spring part 104 that is deformed within the range of displacement of the movable part 105.

  According to the microstructure of the present embodiment, since the guide portion 206 is provided on the side of the spring portion 104, when the spring portion 104 is formed by plating, for example, as described later, The cross-sectional shape is suppressed from becoming wider as it is separated from the substrate 101, and the spring portion 104 can be formed to a desired dimension with high accuracy. If the spring part 104 can be formed in a desired dimension as described above, for example, a fine structure including the movable part 105 that vibrates with a desired frequency characteristic can be manufactured.

  Next, a method for manufacturing the microstructure in the present embodiment will be described with reference to FIGS. 2B, 2C, and 2D. Below, it demonstrates focusing on the part of the spring part 104. FIG. First, the support portion 102 is formed on the substrate 101. In this method, a seed layer is formed, a resist layer having an opening pattern is formed at a location to be the support portion 102, and metal (Au) is deposited (grown) by a plating method on the seed layer of the opening pattern to form a metal pattern. After forming and removing the resist layer, the seed layer can be removed by etching using the metal pattern as a mask and separated.

  Next, a sacrificial layer 251 is formed so as to fill the substrate 101 around the support portion 102 (FIG. 2B). For example, the sacrificial layer 251 can be formed by applying a photosensitive polyimide resin and patterning this coating film by a known photolithography technique to expose the upper portion of the support portion 102.

  Next, a seed layer 152 is formed on the sacrificial layer 251 and the exposed upper surface of the support portion 102 (FIG. 2B). For example, a Ti thin film with a thickness of 0.1 μm and an Au thin film with a thickness of 0.1 μm may be sequentially stacked by a vacuum deposition method to form the seed layer 152. The Ti thin film functions as an adhesion layer that improves adhesion between a lower layer such as the upper surface of the sacrificial layer 251 and the Au thin film. This is the same as in the first embodiment.

  Next, a photoresist film is formed on the seed layer 152 and patterned by a known photolithography technique, thereby forming a resist layer 253 having an opening pattern 253a and an opening pattern 253b. Note that the resist layer 253 also includes an opening pattern for forming the fixed portion 103 and the movable portion 105 in another region (not shown). Here, the opening pattern 253a is the same as the opening pattern 153a of the resist layer 153 in the first embodiment described above, and is continuous with the opening pattern for forming the fixed portion 103 and the movable portion 105. On the other hand, in the present embodiment, the opening pattern 253b is continuous with the opening pattern for forming the fixing portion 103.

  Next, by forming a gold plating film by a well-known electrolytic plating method, as shown in FIG. 2C, the metal pattern 154 and the metal are formed on the seed layer 152 inside the opening pattern 253a and the opening pattern 253b. A pattern 256 is formed. At this time, the metal pattern 256 is formed on both sides of the metal pattern 154 simultaneously with the metal pattern 154. Note that, also in the above-described opening pattern formed in another region (not shown) of the resist layer 253, the metal pattern that forms the fixed portion 103 and the movable portion 105 is formed together with the metal pattern 254 and the metal pattern 256.

  Here, attention is focused on the resist layer 253 in a region sandwiched between the metal pattern 154 and the metal pattern 256. In this region, an opposing force is applied between the stress that the metal pattern 154 tends to spread toward the metal pattern 256 and the stress that the metal pattern 256 tends to spread toward the metal pattern 154. For example, when the widths of the metal pattern 154 and the metal pattern 256 are equal, the stresses acting on the opposite sides are equal and are in a state of being offset across the region.

  For these reasons, the metal pattern 154 and the metal pattern 256 are prevented from spreading to the metal pattern 256 side and the metal pattern 256 to the metal pattern 154 side in the growth process by plating of the metal pattern 154 and the metal pattern 256. become. As a result, in the metal pattern 154 in which the metal pattern 256 is formed on both sides, the cross-sectional width perpendicular to the extending direction is suppressed from changing from the substrate 101 side to the upper side, and the cross-sectional shape is formed in a rectangular shape. Will come to be. In other words, the width of the metal pattern 154 is formed to be approximately equal to the width of the opening pattern 253a of the resist layer 253, and is formed with high accuracy with respect to a desired dimension. Note that the other side surface of the metal pattern 256 that is not the metal pattern 154 side does not have a force that opposes the stress that the metal pattern 256 tends to spread on this side. To go.

  After the metal pattern 154 and the metal pattern 256 are formed by the plating method as described above, first, the resist layer 253 is removed. When the resist layer 253 is removed, the formed metal pattern 154, the metal pattern 256, and the seed layer 152 in a region other than the metal pattern that becomes the fixed portion 103 and the movable portion 105 described above are exposed. Etching is removed using the metal pattern 256 as a mask. For example, the upper Au thin film of the seed layer 152 may be removed by wet etching using dilute aqua regia, and the lower titanium thin film may be removed by wet etching using a hydrofluoric acid solution.

  By selectively removing the seed layer 152 as described above, the lower sacrificial layer 251 is partially exposed, and these are removed by, for example, an ashing process using oxygen gas plasma. By removing the sacrificial layer 251 in this manner, as shown in FIG. 2D, the support portion 102 is formed on the substrate 101, the fixing portion 103 is formed on the support portion 102, and the fixing portion 103 is also formed. A spring portion 104 is formed to be connected to the. In addition, on both sides of the spring portion 104, guide portions 206 connected to the fixed portion 103 are formed. Similarly, in other regions not shown in FIG. 2D, a movable portion 105 connected to the spring portion 104 is formed.

  In the microstructure in the present embodiment, unlike the case of the first embodiment described above, it is not necessary to form a support base for supporting the guide portion 206. In the present embodiment, since the guide portions 206 are formed on both sides of the spring portion 104 up to the boundary portion with the support portion 102, the spring at the connection portion between the spring portion 104 and the support portion 102 is formed. The cross-sectional shape of the portion 104 can also be in a substantially rectangular state.

  By providing the guide portion 206, the spring portion 104 can be prevented from being deformed more than necessary. For example, as shown in the enlarged plan view of FIG. 3, when the movable portion 105 receives an external force, the spring portion 104 is deformed and the movable portion 105 is displaced (vibrated). In such an operation, if the deformation of the spring portion 104 is within the range of elastic deformation of the material constituting the spring portion 104, the original shape can be restored. On the other hand, when the elastic deformation limit is exceeded, the spring portion 104 is plastically deformed, and the initial performance cannot be obtained.

  Here, the deformation range of the spring portion 104 is limited by the guide portion 206. If the range of this restriction is the range of elastic deformation of the spring portion 104, a state of plastic deformation exceeding the elastic deformation limit of the spring portion 104 can be suppressed. Further, the breakage of the spring portion 104 can be suppressed.

  In the region where the guide portion is not formed, the width of the spring portion 104 is widened. For example, in the present embodiment, the portion connected to the movable portion 105 of the spring portion 104 is wider than the other regions because the guide portions 206 are not formed on both sides thereof. By widening the connection portion in this way, breakage at the connection portion between the movable portion 105 and the spring portion 104 can be suppressed as compared with a case where the connection portion is formed thin.

[Embodiment 3]
Next, Embodiment 3 of the present invention will be described with reference to FIGS. 4A and 4B. 4A and 4B are enlarged plan views showing a part of the fine structure according to Embodiment 3 of the present invention. In Embodiment 2 described above, the guide portion is connected to the fixed portion 103 in the same manner as the spring portion. However, as shown in FIG. 4A, the microstructure in the present embodiment has a fixed portion 403 and a movable portion 405. Are provided with a guide part 406 via a connection part 416. In the third embodiment, a connection portion 416 is provided on the fixed portion 403 side of the spring portion 404.

  Also in this embodiment, the guide portion 406 extends in the same direction as the spring portion 404, is formed in a straight line like the spring portion 404, and is disposed at the same height as the spring portion 404. Yes. Other configurations are the same as those of the second embodiment described above.

  Also in the microstructure in the present embodiment configured as described above, when the movable portion 405 receives an external force, the spring portion 404 is deformed and the movable portion 405 is displaced. For example, the movable unit 405 is displaced (vibrated) in the vertical direction on the paper surface of FIG. 4A. At this time, in this embodiment, since the guide portion 406 is connected to the spring portion 404 to be deformed, the guide portion 406 is also displaced as the spring portion 404 is deformed. In the guide portion 406, the free end on the movable portion 405 side that is not connected to the connection portion 416 is displaced in the same direction as the movable portion 405 as the spring portion 404 is deformed.

  For example, as shown in FIG. 4B, when the movable portion 405 is displaced downward in the drawing of FIG. 4B, the spring portion 404 is also deformed, and the portion of the spring portion 404 on the movable portion 405 side together with the movable portion 405 is changed to FIG. Move down. At this time, in the present embodiment, the guide portion 406 is also displaced by the deformation of the spring portion 404, so that the free end of the guide portion 406 also moves downward in FIG. 4B. Although the displacement amount of the free end of the guide portion 406 is smaller than the displacement amount of the movable portion 405, the guide portion 406 (free end) and the spring portion 404 are in contact with each other as compared with the case where the guide portion 406 is not displaced at all. The displacement amount of the movable part 405 becomes larger. In other words, in this embodiment, the guide portion 406 and the spring portion 404 do not come into contact with each other even if the amount of displacement of the movable portion 405 that contacts when the guide portion is not displaced at all.

  Therefore, in the present embodiment, the guide portion 406 can be disposed closer to the spring portion 404 side. When the guide part 406 is provided, an area where the guide part 406 is arranged in addition to the spring part 404 is an area having a structure necessary for connecting the fixed part 403 and the movable part 405. In this embodiment, as described above, since the guide portion 406 can be brought closer to the spring portion 404, the area necessary for the connection between the fixed portion 403 and the movable portion 405 is compared with the above-described embodiment. It can be made smaller.

  In the above description, the connecting portion 416 is provided on the fixed portion 403 side of the spring portion 404 and the guide portion 406 is connected. However, the present invention is not limited to this. For example, as shown in FIG. 5, a guide portion 506 may be provided on a spring portion 504 that connects the fixed portion 503 and the movable portion 505 via a connection portion 516 provided on the movable portion 505 side.

[Embodiment 4]
Next, Embodiment 4 of the present invention will be described with reference to FIG. FIG. 6 is an enlarged plan view showing a part of the fine structure according to the fourth embodiment of the present invention. As shown in FIG. 6, the microstructure in the present embodiment includes a guide portion 606 via a connection portion 616 in a spring portion 604 that connects the fixed portion 603 and the movable portion 605. In the fourth embodiment, a connection portion 616 is provided on the fixed portion 603 side of the spring portion 604. These are the same as in the third embodiment.

  In the fourth embodiment, the guide portion 606 is brought closer to the spring portion 604 so that the spring portion 604 comes into contact with the guide portion 606 due to deformation within the range of elastic deformation of the spring portion 604 due to displacement of the movable portion 605. Deploy. In addition, the width dimension of the guide part 606 is made smaller so that the guide part 606 is more easily deformed. Other configurations are the same as those of the second and third embodiments described above, and the guide portion 606 is disposed at the same height as the spring portion 604.

  In the present embodiment, for example, as shown in FIG. 6, the movable portion 605 is displaced to the lower side of the sheet of FIG. 6 to deform the spring portion 604, and the portion of the spring portion 604 on the movable portion 605 side 6, contact (collision) with the lower guide portion 606 in FIG. 6 causes the guide portion 606 to be deformed, and shock caused by the contact is buffered. For this reason, when the deformed spring part 604 comes into contact with the guide part 606, abrupt displacement is suppressed and the spring part 604 becomes smoother.

  Therefore, for example, when the movable portion 605 performs a periodic vibration operation, a change in which the phase of vibration jumps discontinuously due to contact of the spring portion 604 with the guide portion 606 is suppressed, and continuous high-speed operation is possible. It becomes. Further, in this embodiment, the guide portion 606 is arranged closer to the spring portion 604, so that the area necessary for the connection between the fixed portion 603 and the movable portion 605 can be further increased compared to the above-described embodiment. Can be small.

[Embodiment 5]
Next, Embodiment 5 of the present invention will be described with reference to FIGS. 7A and 7B. 7A and 7B are enlarged plan views showing a part of the microstructure in the fifth embodiment of the present invention. As shown in FIG. 7A, the microstructure in the present embodiment includes a guide portion 706 via a connection portion 716 in a spring portion 704 that connects the fixed portion 703 and the movable portion 705. In the fifth embodiment, a connection portion 716 is provided at the center portion of the spring portion 704, and the connection portion 716 is connected to the center portion of the guide portion 706. Also in this embodiment, the guide portion 706 is formed at the same height as the spring portion 704, and the guide portion 706 is disposed on a plane on which the spring portion 704 parallel to the substrate plane is disposed. .

  In the fifth embodiment, the geometric structure including the pair of connection portions 716 and the pair of guide portions 706 in the spring portion 704 has a symmetrical shape with respect to the central portion of the spring portion 704 in plan view. . As shown in FIG. 7B, when the spring portion 704 is deformed by the displacement of the movable portion 705, the geometric structure including the pair of connection portions 716 and the pair of guide portions 706 in the spring portion 704 is planar. When viewed, the shape is point-symmetric with respect to the center of the spring portion 704.

  For this reason, with respect to such deformation of the spring portion 704, on the fixing portion 703 side of the spring portion 704, the free end on the fixing portion 703 side of the guide portion 706 on the lower side of FIG. 7B contacts the spring portion 704. On the movable portion 705 side, the free end on the movable portion 705 side of the guide portion 706 on the upper side of FIG. 7B comes into contact with the spring portion 704. In addition, these two contact points are at an equal distance from the central part of the spring part 704. Thus, according to this Embodiment, the state which the spring part 704 and guide part 706 by deformation | transformation contact can be made symmetrical.

  In addition, according to the present embodiment, as described above, the geometric structure including the pair of connection portions 716 and the pair of guide portions 706 in the spring portion 704 is symmetric. Design of desired characteristics by shape, such as frequency characteristics in vibration motion, becomes easier. 7A and 7B, the distance between the free end of the guide portion 706 and the fixed portion 703 and the movable portion 705 is shown longer than that of the above-described embodiment for convenience of explanation. It is better to make it as small as possible. The spring portion 704 that falls between these is a region that is not subjected to the above-described dimensional control by the guide portion 706. For this reason, the same applies to the other embodiments, in which the distance between the free end of the guide portion and the fixed portion and the movable portion is as small as possible in consideration of ease of manufacture. Is good.

[Embodiment 6]
Next, Embodiment 6 of the present invention will be described with reference to FIGS. 8A and 8B. 8A and 8B are plan views showing an enlarged part of the microstructure in the sixth embodiment of the present invention. As shown in FIG. 8A, the microstructure in this embodiment includes a guide portion 806 via a connection portion 816 in a spring portion 804 that connects the fixed portion 803 and the movable portion 805. In the sixth embodiment, a connection portion 816 is provided at the center portion of the spring portion 804, and the connection portion 816 is connected to the center portion of the guide portion 806. These are the same as those in the fifth embodiment described above.

  In addition, in the sixth embodiment, the guide portion 806 is formed to be bent so that the free end side of the guide portion 806 is separated from the spring portion 804 as the distance from the connection portion 816 increases. It is. Also in this embodiment, the guide portion 806 is formed at the same height as the spring portion 804, and the guide portion 806 is disposed on a plane where the spring portion 804 parallel to the substrate plane is disposed. . Accordingly, the guide portion 806 is bent on the plane.

  According to the present embodiment configured as described above, the distance (interval) between the free end of the guide portion 806 and the spring portion 804 even if the connecting portion 816 is made shorter than the configuration of the above-described fifth embodiment. ) Can be performed in the same manner as in the fifth embodiment. For this reason, even if the connecting portion 816 is made shorter than the configuration of the fifth embodiment, the deformable range of the spring portion 804 until the free end of the guide portion 806 contacts the spring portion 804 is reduced. It becomes possible to make it comparable to the structure of 5. For this reason, according to this Embodiment, the area | region required for the connection of the fixing | fixed part 803 and the movable part 805 can be made smaller.

  By the way, FIG. 8B has shown the state of the largest deformation | transformation which does not exceed the limit of the elastic deformation of the spring part 804, for example. Among these, a bent structure 806a indicated by a dotted line indicates a virtual structure in which the guide portion has the same bent shape as the spring portion 804 in the maximum deformation state. As described above, when the bending shape of the guide portion is the same as the maximum deformation of the spring portion 804, the free end of the bending structure 806a contacts the spring portion 804 even when the spring portion 804 is in the maximum deformation state. There is nothing. For this reason, when the bending structure 806a is used as the guide portion, the spring portion 804 becomes deformable more than the maximum deformation, and the spring portion 804 is damaged. Therefore, the shape of the guide portion 806 from the connection portion 816 to the free end is determined so that the free end contacts the spring portion 804 in a state where the spring portion 804 is in the maximum deformation state.

  It is also possible to arrange the guide part on one side of the spring part. For example, as shown in FIG. 9, one guide portion 906 can be provided on one side of a spring portion 904 that connects the fixed portion 903 and the movable portion 905 via a connection portion 916. Also in this case, the connection portion 916 is provided at the center portion of the spring portion 904, and the connection portion 916 is connected to the center portion of the guide portion 906. The guide portion 906 is formed at the same height as the spring portion 904, and the guide portion 906 is disposed on a plane on which the spring portion 904 parallel to the substrate plane is disposed. According to such a configuration, since the area where the guide part 906 is formed can be reduced, the area required for the connection between the fixed part 903 and the movable part 905 can be further reduced.

  In addition, the connecting portion provided in the central portion of the spring portion may extend to one side of the fixed portion or the movable portion without extending to both the fixed portion and the movable portion. . For example, as shown in FIG. 10, connecting portions 1016 are arranged on both sides of the central portion of the spring portion 1004 that couples the fixed portion 1003 and the movable portion 1005, and one connecting portion 1016 has a fixed portion 1003 side. The extending guide part 1006 may be provided, and the other connecting part 1016 may be provided with a guide part 1006 extending to the movable part 1005 side. Also in this case, the guide part 1006 is formed at the same height as the spring part 1004, and the guide part 1006 is arranged on a plane on which the spring part 1004 parallel to the substrate plane is arranged.

  According to such a configuration, when the movable unit 1005 is displaced to the upper side in FIG. 10, the deformation of the movable unit 1005 is limited by the deformable movable unit 1005 coming into contact with the guide unit 1006. On the other hand, when the movable part 1005 is displaced to the lower side in FIG. 10, the deformable movable part 1005 does not contact the guide part 1006 and the deformation of the movable part 1005 is not limited. Thus, the displacement operation of the movable part 1005 at the boundary of the spring part 1004 can be made asymmetric.

  Moreover, you may make it extend from the connection part provided in the edge part of a spring part to the one side of a fixed part or a movable part. For example, as shown in FIG. 11, connection portions 1116 are arranged on the fixed portion 1103 side and the movable portion 1105 side of the spring portion 1104 that connects the fixed portion 1103 and the movable portion 1105, and one connection portion 1116 has A guide portion 1106 extending toward the fixed portion 1103 may be provided, and the other connecting portion 1116 may include a guide portion 1106 extending toward the movable portion 1105.

  By doing in this way, in the range in which guide part 1106 is formed, it will be in the state where guide part 1106 is arranged on both sides of spring part 1104. In addition, as shown in FIG. 12, a protruding portion 1206 that is free of the guide portion 1106 toward the spring portion 1104 may be provided to control the contact state of the spring portion 1104 with the guide portion 1106.

  In addition, as shown in FIG. 13, a guide portion 1306 provided with a bent portion bent toward the spring portion 1304 at a connection portion 1316 provided at the center portion of the spring portion 1304 that connects the fixed portion 1303 and the movable portion 1305. May be provided. Since the guide portion 1306 includes a bent portion, the distance between the guide portion 1306 and the spring portion 1304 can be changed within a range in which the spring portion 1304 extends. Therefore, the width of the spring portion 1034 can be changed corresponding to the bent state of the guide portion 1306, and the displacement state of the movable portion 1305 can be made more varied.

  In addition, although the case where the connection part (spring part) was comprised from one was demonstrated in the above-mentioned, it does not restrict to this. For example, even if the connecting portion includes two linear portions arranged in parallel, the cross-sectional shape of the connecting portion becomes an inversely tapered shape as described above by including the guide portion on the side. Can be suppressed. In this case, one linear portion of the connecting portion is sandwiched between the guide portion on this side and the other linear portion of the connecting portion. Therefore, the stress that one linear portion of the connecting portion tends to spread is suppressed by the guide portion on the one linear portion side of the connecting portion and the other linear portion of the connecting portion. . Further, the other linear portion of the connecting portion is sandwiched between the guide portion on this side and one linear portion of the connecting portion. Accordingly, the stress that the other linear portion of the connecting portion tends to spread is suppressed by the guide portion on the side of the other linear portion of the connecting portion and the one linear portion of the connecting portion. .

It is a top view which shows the structural example of the fine structure in Embodiment 1 of this invention. It is sectional drawing which shows the structural example of the fine structure in Embodiment 1 of this invention. It is process drawing which shows the example of the manufacturing method of the fine structure in Embodiment 1 of this invention. It is process drawing which shows the example of the manufacturing method of the fine structure in Embodiment 1 of this invention. It is process drawing which shows the example of the manufacturing method of the fine structure in Embodiment 1 of this invention. It is a top view which shows the structural example of the fine structure in Embodiment 2 of this invention. It is process drawing which shows the example of the manufacturing method of the fine structure in Embodiment 2 of this invention. It is process drawing which shows the example of the manufacturing method of the fine structure in Embodiment 2 of this invention. It is process drawing which shows the example of the manufacturing method of the fine structure in Embodiment 2 of this invention. It is a block diagram which shows the partial structure of the fine structure in Embodiment 2 of this invention. It is a top view which expands and shows a part of microstructure in Embodiment 3 of this invention. It is a top view which expands and shows a part of microstructure in Embodiment 3 of this invention. It is a top view which expands and shows a part of other fine structure in Embodiment 3 of this invention. It is a top view which expands and shows a part of fine structure in Embodiment 4 of this invention. It is a top view which expands and shows a part of fine structure in Embodiment 5 of this invention. It is a top view which expands and shows a part of fine structure in Embodiment 5 of this invention. It is a top view which expands and shows a part of fine structure in Embodiment 6 of this invention. It is a top view which expands and shows a part of fine structure in Embodiment 6 of this invention. It is a top view which expands and shows a part of microstructure. It is a top view which expands and shows a part of microstructure. It is a top view which expands and shows a part of microstructure. It is a top view which expands and shows a part of microstructure. It is a top view which expands and shows a part of microstructure. It is a top view which shows the structure of a fine structure. It is sectional drawing which shows the structure of a fine structure. It is process drawing which shows the example of a manufacturing method of a microstructure. It is process drawing which shows the example of a manufacturing method of a microstructure. It is process drawing which shows the example of a manufacturing method of a microstructure. It is a top view which shows the structure of a fine structure. It is sectional drawing which shows the structure of a fine structure. It is process drawing which shows the example of a manufacturing method of a microstructure. It is process drawing which shows the example of a manufacturing method of a microstructure. It is process drawing which shows the example of a manufacturing method of a microstructure.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 101 ... Board | substrate, 102 ... Support part, 103 ... Fixed part, 104 ... Spring part (connection part), 205 ... Movable part, 105a ... Etching hole, 106 ... Guide part.

Claims (10)

A fixed part disposed on the substrate;
A movable part that is spaced apart on the substrate and is displaced in the plane direction of the substrate;
A connecting part that connects the fixed part and the movable part and deforms in a plane in which the movable part is displaced; and
A microstructure having a guide portion disposed on a side of the connecting portion and spaced apart from the connecting portion and disposed on the substrate at the same height as the connecting portion. The microstructure according to claim 1,
The microstructure is characterized in that the guide portion is fixed on the substrate. The microstructure according to claim 1,
The microstructure is characterized in that the guide portion is connected to a selected one of the fixed portion and the movable portion. The microstructure according to claim 1,
The said guide part is connected to the said connection part via the connection part. The micro structure characterized by the above-mentioned. The microstructure according to claim 4, wherein
The microstructure is characterized in that the guide portion is formed to bend away from the connecting portion as the distance from the connecting portion increases. In the fine structure according to any one of claims 1 to 5,
The microstructure is characterized in that the guide portion is disposed on a side of the connecting portion so as to be in contact with the connecting portion within a range in which the connecting portion is elastically deformed. In the microstructure according to any one of claims 1 to 6,
The said guide part is formed in the both sides of the said connection part. The micro structure characterized by the above-mentioned. Forming a support on the substrate;
And at least a step of forming a structure including a fixed portion, a movable portion, and a connecting portion for connecting the fixed portion and the movable portion in a state where the fixed portion is supported by the support portion,
The structure is formed by selectively growing a metal pattern by a plating method using a resist layer having an opening pattern,
When the structure is formed by a plating method, a guide portion disposed at the same height as the connection portion on the substrate is formed at the same time apart from the connection portion on the side of the connection portion,
The method for producing a microstructure, wherein the resist layer is removed after the structure and the guide portion are formed. A fixed part disposed on the substrate;
A movable part that is spaced apart on the substrate and is displaced in the plane direction of the substrate;
A connecting part that connects the fixed part and the movable part and deforms in a plane in which the movable part is displaced; and
A manufacturing method for manufacturing a microstructure including: a guide portion on a side of the connecting portion and spaced apart from the connecting portion and disposed on the substrate at the same height as the connecting portion,
Forming a support on the substrate;
On the support portion, a resist layer having an opening pattern corresponding to the fixed portion, the connecting portion, the movable portion, and the guide portion is formed, and an opening pattern corresponding to the fixed portion is formed on the support portion. Forming to be arranged; and
Forming a metal pattern by plating within the opening pattern of the resist layer;
And removing the resist layer to form the fixed portion, the connecting portion, the movable portion, and the guide portion formed of the metal pattern. Manufacturing method. In the manufacturing method of the fine structure according to claim 8 or 9,
The said guide part is formed in the both sides of the said connection part. The manufacturing method of the microstructure characterized by the above-mentioned.

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