JP2010045325A - Semiconductor device, and method for manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of bringing respective electronic components into prescribed temperatures or less, even in the semiconductor device mounted with the electronic components different in individual sizes and heat generation quantities, and capable of attaining a prescribed function, and to provide a method for manufacturing the semiconductor device. <P>SOLUTION: This semiconductor device includes: a polyimide substrate; a wiring pattern formed on a surface of the polyimide substrate; and the electronic components bonded to an inner lead of the wiring pattern, and is coated with an insulating protection film on a surface excepting a lead portion of the wiring pattern. The semiconductor device has, on a surface of the insulating protection film, a heat radiation means comprising a metal layer capable of reducing an observed surface temperature of each electronic component to an estimated surface temperature by regulating any of a thickness, an area and a kind of metal. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a semiconductor device capable of efficiently dissipating heat generated by an electronic component mounted on a substrate, and a method for manufacturing the semiconductor device.

Conventionally, for example, a semiconductor device in which a wiring pattern is formed on the surface of a polyimide substrate and an electronic component is mounted on an inner lead portion of the wiring pattern has been widely used.
In such a semiconductor device, the mounted electronic component generates heat when driven, but the heat generated by the generated heat is dissipated through the surface of the electronic component and the wiring pattern connected to the electronic component. It has come to be.

  However, electronic components in recent years have been steadily increasing in density and integration. As a result, the amount of heat generated when the electronic components are driven increases, and if the high temperature state continues, the semiconductor device performs a predetermined function. Sometimes it couldn't be done.

  In order to solve this problem, in the semiconductor device 100 described in Patent Document 1, as shown in FIGS. 9A and 9B, the inner leads of the wiring pattern 104 formed on the surface of the polyimide substrate 102 are used. A protective layer 114 made of copper foil 112 is formed on the surface excluding the portion 106 and the outer lead 108 portion via an adhesive 110, and the heat generated by the electronic component 116 connected to the inner lead 106 by the protective layer 114 is generated. It is designed to dissipate heat efficiently.

  Such a protective layer 114 made of the copper foil 112 has high thermal conductivity and is effective in dissipating the heat generated by the electronic component 116, thereby ensuring that the electronic component 116 does not exceed a predetermined temperature. It is possible to fulfill a predetermined function.

JP 2007-258197 A

  However, in the semiconductor device 100 disclosed in Patent Document 1, it is completely unknown how to provide the protective layer 114 on the surface of the wiring pattern 104 for the electronic components 116 having different sizes and heat generation amounts. . If the protective layer 114 is simply provided on the surface of the wiring pattern 104, all of the various electronic components 116 cannot be brought to a predetermined temperature or less, and further research has been conducted to solve this problem. is the current situation.

  In view of such a current situation, the present invention can reduce the temperature to a predetermined temperature or less and perform a predetermined function even in a semiconductor device in which electronic components having different sizes and heat generation amounts are mounted. An object of the present invention is to provide a semiconductor device and a method for manufacturing the semiconductor device.

The present invention was invented in order to achieve the problems and objects in the prior art as described above,
The semiconductor device of the present invention is
A polyimide substrate, a wiring pattern formed on the surface of the polyimide substrate, and an electronic component bonded to an inner lead of the wiring pattern, and an insulating protective film on the surface excluding the lead portion of the wiring pattern Is a semiconductor device coated with
On the surface of the insulating protective film,
It is characterized by having a heat dissipating means comprising a metal layer that can lower the measured surface temperature of the electronic component to the assumed surface temperature by adjusting any of the thickness, area, and type of metal.

In addition, a method for manufacturing a semiconductor device of the present invention includes:
at least,
Forming a wiring pattern on the surface of the polyimide substrate, and mounting electronic components on the inner leads of the wiring pattern;
Coating an insulating protective film on the surface except the lead portion of the wiring pattern;
A method of manufacturing a semiconductor device having
A step of forming a heat radiation means comprising a metal layer on the surface of the insulating protective film, which can lower the measured surface temperature of the electronic component to an assumed surface temperature by adjusting any of the thickness, area, and type of metal. When,
It is characterized by having.

As described above, by providing heat dissipation means that adjusts any of the thickness, area, and type of metal on the surface of the insulating protective film, the electronic component can be reliably brought to a predetermined temperature or lower.
Moreover, even in the case of a semiconductor device in which electronic components having different sizes and heat generation amounts are mounted, the temperature of various electronic components can be adjusted by adjusting any of the thickness, area, and type of metal of the heat dissipation means. Can be set to a predetermined temperature or lower, and each semiconductor device can perform a predetermined function.

The semiconductor device of the present invention is
A polyimide substrate, a wiring pattern formed on the surface of the polyimide substrate, and an electronic component bonded to an inner lead of the wiring pattern, and an insulating protective film on the surface excluding the lead portion of the wiring pattern Is a semiconductor device coated with
On the back surface of the polyimide substrate,
It has heat dissipation means consisting of a metal layer that can lower the measured surface temperature of the electronic component to the assumed surface temperature by adjusting any of the thickness, area, and type of metal via the adhesive layer And

In addition, a method for manufacturing a semiconductor device of the present invention includes:
at least,
Forming a wiring pattern on the surface of the polyimide substrate, and mounting electronic components on the inner leads of the wiring pattern;
Coating an insulating protective film on the surface except the lead portion of the wiring pattern;
A method of manufacturing a semiconductor device having
On the back surface of the polyimide substrate, an adhesive layer is provided with a heat dissipating means composed of a metal layer that can lower the measured surface temperature of the electronic component to an assumed surface temperature by adjusting any of the thickness, area, and type of metal. Forming through
It is characterized by having.

  In this way, by providing heat dissipation means that adjusts any of the thickness, area, and type of metal on the back surface of the polyimide substrate via the adhesive layer, the electronic component can be reliably kept at a predetermined temperature or lower. Can do.

  Moreover, even in the case of a semiconductor device in which electronic components having different sizes and heat generation amounts are mounted, the temperature of various electronic components can be adjusted by adjusting any of the thickness, area, and type of metal of the heat dissipation means. Can be set to a predetermined temperature or lower, and each semiconductor device can perform a predetermined function.

In the semiconductor device or the method for manufacturing the semiconductor device of the present invention,
It is preferable that the thermal conductivity coefficient of the metal forming the metal layer of the heat radiating means is in the range of 50 to 450 W / m · K.
If it is a metal layer which has a heat conductivity coefficient in such a range, the heat | fever of an electronic component can be thermally radiated efficiently.

In addition, the semiconductor device of the present invention or the manufacturing method of the semiconductor device,
It is preferable that the metal layer of the heat dissipation means is formed of a copper layer (for example, a copper foil) or an aluminum layer (for example, an aluminum foil).
As described above, if the metal layer having a thermal conductivity coefficient within the above range is a copper layer or an aluminum layer, it is particularly preferable since the thermal conductivity coefficient is high and the handleability is easy.

In the semiconductor device or the method for manufacturing the semiconductor device of the present invention,
The thickness of the metal layer of the heat radiating means is preferably in the range of 5 to 100 μm.
If the thickness of the metal layer is set within such a range, flexibility is not impaired, and the temperature of the electronic component can be easily set to a predetermined temperature or lower.

In the semiconductor device or the method for manufacturing the semiconductor device of the present invention,
It is preferable that the formation area of the metal layer of the heat dissipation means is in the range of 1 to 100% of the total area of the insulating protective film.

  If the heat radiating means is provided within such a range, the temperature of the electronic component can be easily set to a predetermined temperature or lower. When the area of the metal layer is relatively small, the temperature of the electronic component can be reduced to a predetermined temperature or less by increasing the thickness of the metal layer. Conversely, when the area of the metal layer is relatively large Can keep the temperature of the electronic component below a predetermined temperature while keeping the thickness of the metal layer small.

In the semiconductor device or the method for manufacturing the semiconductor device of the present invention,
The insulating protective film is a cover lay or a solder resist.
Thus, if the insulating protective film is a cover lay or a solder resist, insulation is surely made between the wiring pattern and the heat dissipation means, so that the temperature of the electronic component is kept below a predetermined temperature without causing a short circuit. can do.

In the semiconductor device or the method for manufacturing the semiconductor device of the present invention,
The insulating protective film preferably has a thickness in the range of 5 to 100 μm.
If the thickness of the insulating protective film is adjusted within such a range, the temperature of the electronic component can be set to a predetermined temperature or less without impairing flexibility.

In the semiconductor device or the method for manufacturing the semiconductor device of the present invention,
The wiring pattern is preferably formed from copper or a copper alloy.
Thus, if the wiring pattern is formed from copper or a copper alloy, the electrical conductivity is good, and a predetermined function in the semiconductor device can be reliably achieved.

In the semiconductor device or the method for manufacturing the semiconductor device of the present invention,
The line width of the inner lead of the wiring pattern is preferably in the range of 5 to 40 μm.

  By setting the line width of the inner lead within such a range, it is possible to ensure conduction with high-density and highly-integrated electronic components, and there is no fear of a short circuit, and a predetermined function in the semiconductor device is ensured. Can fulfill.

In the semiconductor device or the method for manufacturing the semiconductor device of the present invention,
In the metal layer, it is preferable that the average surface roughness (Rz) of the surface of the metal layer not in contact with the insulating protective film is in the range of 0.1 to 5.0 μm.
Thus, if the range of the average surface roughness (Rz) of the metal layer surface is set, heat dissipation is good and the temperature of the electronic component can be easily set to a predetermined temperature or lower.

In the semiconductor device or the method for manufacturing the semiconductor device of the present invention,
It is preferable that a heat radiating means made of a metal layer capable of lowering the measured surface temperature of the electronic component to an assumed surface temperature is provided on the surface of the insulating protective film, and the heat radiating means is set by the following formula (1).
T = e1 * W- ^(a1) * tMe- ^(b1) * tR ^(c1) .. Equation (1) (In Equation (1), T is the assumed surface temperature (° C) of the electronic component, and W is the heat conduction. The coefficient (W / m · K), tMe represents the thickness (μm) of the heat radiation means, tR represents the thickness (μm) of the insulation protective film, and e1 represents the value when the heat radiation means is provided on the surface of the insulation protective film. A coefficient obtained by multiple regression analysis, which is in the range of 50 to 250, a1 is in the range of 0.12 to 0.07, b1 is in the range of 0.12 to 0.07, and c1 is 0. Within the range of .011 to 0.005).

  In this way, if the heat dissipation means is set according to the formula (1), for example, when it is desired to increase the heat dissipation amount of the heat generated by the electronic component in the same semiconductor device, how to change the thickness of the heat dissipation means It is possible to immediately know whether it is good or how to reduce the area of the heat radiating means, and it is possible to quickly respond to a design change or the like.

In the semiconductor device or the method for manufacturing the semiconductor device of the present invention,
It is preferable that a heat dissipating means made of a metal layer capable of lowering the measured surface temperature of the electronic component to an assumed surface temperature is partially provided on the surface of the insulating protective film, and the heat dissipating means is set by the following formula (2). .
T = e2 * W- ^(a2) * tMe- ^(b2) * tR ^(c2) * S- ^(d1) .. Formula (2) (In Formula (2), T is the assumed surface temperature of the electronic component (° C.) ), W is the thermal conductivity coefficient (W / m · K), tMe is the thickness of the heat dissipation means (μm), tR is the thickness of the insulating protective film (μm), and S is the installation area ratio of the heat dissipation means (of the heat dissipation means E2 is a coefficient obtained by multiple regression analysis when the heat radiation means is provided on the entire surface of the insulating protective film, and is in the range of 50 to 250, and a2 is in the range of 0.12 to 0.07, b2 is in the range of 0.12 to 0.07, c2 is in the range of 0.011 to 0.005, and d1 is in the range of 0.11 to 0.06. is there.).

  In this way, if the heat dissipation means is set according to the formula (2), for example, when it is desired to increase the heat dissipation amount of the heat generated by the electronic component in the same semiconductor device, the thickness of the heat dissipation means can be changed. It is possible to immediately know whether it is good or how to reduce the area of the heat radiating means, and it is possible to quickly respond to a design change or the like.

In the semiconductor device or the method for manufacturing the semiconductor device of the present invention,
A heat dissipating means composed of a metal layer capable of lowering the measured surface temperature of the electronic component to an assumed surface temperature is provided on the back surface of the polyimide substrate via the adhesive layer, and the heat dissipating means is set by the following formula (3). It is preferable to do.
T = e3 * W- ^(a3) * tMe- ^(b3) * tP ^(f1) .. Equation (3) (In Equation (3), T is the assumed surface temperature (° C.) of the electronic component, and W is the heat conduction. Coefficient (W / m · K), tMe represents the thickness (μm) of the heat dissipation means, tP represents the total thickness (μm) of the polyimide substrate and the adhesive layer, and e3 is provided with the heat dissipation means on the surface of the insulating protective film. Is a coefficient obtained from the multiple regression analysis, and is in the range of 50 to 250, a3 is in the range of 0.12 to 0.07, and b3 is in the range of 0.12 to 0.07. , F1 is in the range of 0.011 to 0.005).

  In this way, if the heat dissipation means is set according to the formula (3), for example, when it is desired to increase the heat dissipation amount of the heat generated by the electronic component in the same semiconductor device, the thickness of the heat dissipation means can be changed. It is possible to immediately know whether it is good or how to reduce the area of the heat radiating means, and it is possible to quickly respond to a design change or the like.

In the semiconductor device or the method for manufacturing the semiconductor device of the present invention,
A heat dissipating means made of a metal layer capable of lowering the measured surface temperature of the electronic component to an assumed surface temperature is partially provided on the back surface of the polyimide substrate via the adhesive layer, and the heat dissipating means is expressed by the following formula (4). ) Is preferably set.
T = e4 * W- ^(a4) * tMe- ^(b4) * tP ^(f2) * S- ^(d2) .. Equation (4) (In Equation (4), T is the assumed surface temperature of the electronic component (° C.) ), W is the thermal conductivity coefficient (W / m · K), tMe is the thickness of the heat dissipation means (μm), tP is the total thickness (μm) of the polyimide substrate and the adhesive layer, and S is the area ratio of the heat dissipation means (Equipment area of heat radiation means / area of polyimide substrate) e4 is a coefficient obtained from multiple regression analysis when heat radiation means is provided on the entire surface of the insulating protective film, and is in the range of 50 to 250. Further, a4 is in the range of 0.12 to 0.07, b4 is in the range of 0.12 to 0.07, f2 is in the range of 0.011 to 0.005, and d2 is in the range of 0.11 to 0.06. In.)

  In this way, if the heat dissipation means is set according to Equation (4), for example, if the heat dissipation amount of heat generated by the electronic component in the same semiconductor device is desired to be larger than the current state, how can the thickness of the heat dissipation means be changed? It is possible to immediately know whether it is good or how to reduce the area of the heat radiating means, and it is possible to quickly respond to a design change or the like.

  According to the present invention, even in a semiconductor device in which electronic components having different sizes and calorific values are individually mounted, any of the thickness, area, and metal type is provided on the surface of the insulating protective film or the back surface of the polyimide substrate. Providing the heat radiating means that adjusts the above can provide each of the electronic components at a predetermined temperature or lower, and provide a semiconductor device capable of performing a predetermined function and a method for manufacturing the semiconductor device.

1A and 1B are explanatory views for explaining a semiconductor device according to an embodiment of the present invention. FIG. 1A is a front view, and FIG. 1B is a sectional view in the thickness direction of FIG. It is. 2A and 2B are explanatory views for explaining a semiconductor device according to another embodiment of the present invention. FIG. 2A is a front view, and FIG. 2B is a thickness direction of FIG. It is sectional drawing. 3A and 3B are explanatory views for explaining a semiconductor device according to another embodiment of the present invention. FIG. 3A is a front view, and FIG. 3B is a thickness direction of FIG. It is sectional drawing. 4A and 4B are explanatory views for explaining a semiconductor device according to another embodiment of the present invention. FIG. 4A is a front view, and FIG. 4B is a thickness direction of FIG. It is sectional drawing. FIG. 5 is a process diagram for explaining a method of manufacturing a semiconductor device according to an embodiment of the present invention. FIG. 5A is a process diagram for explaining a state in which a wiring pattern is formed on a polyimide substrate. FIG. 5B is a process diagram for explaining a state in which the laminated body of the heat radiation means and the insulating protective film is punched on the wiring pattern, and FIG. 5C shows the state in which the heat radiation means and the insulating protective film are formed on the wiring pattern. FIG. 5D is a process diagram for explaining a state in which an electronic component is mounted on the inner lead portion, and the semiconductor device is completed by sealing between the electronic component and the inner lead portion with a sealing resin. FIG. FIG. 6 is a process diagram for explaining a method of manufacturing a semiconductor device according to another embodiment of the present invention. FIG. 6 (a) shows a stacked structure of a heat radiation means and an insulating protective film on a wiring pattern. FIG. 6B is a process diagram for explaining a state in which a cut line is inserted only in the heat dissipation means and a laminated body of the heat dissipation means and the insulating protective film with the cut lines is punched out. FIG. 6B is a heat dissipation means and an insulating protective film on the wiring pattern. It is process drawing explaining the state which removed the unnecessary part outside the cut line of a thermal radiation means, after forming this laminated body. FIG. 7 is a process diagram for explaining a method of manufacturing a semiconductor device according to another embodiment of the present invention. FIG. 7A shows a heat dissipation means formed on the entire back surface through an adhesive layer. 7B is a process diagram for explaining a state in which a wiring pattern is formed on the surface of the polyimide substrate, FIG. 7B is a process diagram for explaining a state in which an insulating protective film is punched on the wiring pattern, and FIG. FIG. 7D is a process diagram for explaining a state in which an insulating protective film is formed on the pattern. FIG. 7D shows a semiconductor in which an electronic component is mounted on the inner lead portion and the electronic component and the inner lead are sealed with a sealing resin. It is process drawing explaining the state which completed the apparatus. FIG. 8 is a process diagram for explaining a method of manufacturing a semiconductor device according to another embodiment of the present invention. FIG. 8A shows a heat dissipation means formed on a part of the back surface through an adhesive layer. It is process drawing explaining the state which formed the wiring pattern in the surface of the polyimide substrate. 9A and 9B are explanatory views for explaining a conventional semiconductor device, in which FIG. 9A is a front view and FIG. 9B is a cross-sectional view in the thickness direction of FIG. 9A.

Hereinafter, embodiments (examples) of the present invention will be described in more detail with reference to the drawings.
1A and 1B are explanatory views for explaining a semiconductor device according to an embodiment of the present invention. FIG. 1A is a front view, and FIG. 1B is a sectional view in the thickness direction of FIG. It is.

The present invention is a semiconductor device capable of efficiently dissipating heat generated by an electronic component mounted on a substrate, and a method for manufacturing the semiconductor device.
The term “measured surface temperature of the electronic component” in the specification of the present invention refers to the highest temperature reached on the surface of the electronic component when the semiconductor device is started up without any heat dissipation means.
The “assumed surface temperature of the electronic component” is a surface temperature of the electronic component that is assumed when the semiconductor device in which the heat dissipating unit is formed is started.

<Semiconductor device 10>
As shown in FIG. 1, the semiconductor device 10 of the present invention includes a polyimide substrate 12, a wiring pattern 14 formed on the surface of the polyimide substrate 12, and a semiconductor chip bonded to the inner leads 16 of the wiring pattern 14. The electronic component 20 and the inner lead 16 portion are sealed with a sealing resin 32, and the surface of the wiring pattern 14 excluding the inner lead 16 and the outer lead 18 is insulated and protected. The film 22 is covered.

A heat radiating means 24 made of a metal layer is formed on the surface of the insulating protective film 22. In the semiconductor device 10, the heat radiating means 24 is particularly characteristic.
The heat radiating means 24 is adjusted in any one of thickness, area, and metal type, so that the measured surface temperature of each electronic component 20 can be lowered to the assumed surface temperature. It is like that.

  In addition, it is preferable to adjust within the specific range about the thickness and area of the thermal radiation means 24 which consist of metal layers. The specific thickness of the heat dissipating means 24 is preferably in the range of 5 to 100 μm, and the area is preferably in the range of 1 to 100% of the total area of the insulating protective film 22. More preferably, it is within the range of 98%. If this range is less than 1%, it is difficult to attach to the insulating protective film 22. The insulating protective film 22 here is a cover lay or a solder resist.

  In the semiconductor device 10 shown in FIG. 1, the insulating protective film 22 and the heat radiating means 24 are as if they have the same area, but the actual heat radiating means 24 is within the above range. It has an area.

  Moreover, it is preferable that the metal which forms the metal layer of the thermal radiation means 24 is a thing with a heat conductivity coefficient in the range of 50-450 W / m * K, specifically, like an electrolytic copper foil or a rolled copper foil. An aluminum layer such as a copper layer or an aluminum foil is preferred. In this case, use a metal layer, particularly an electrolytic copper foil, whose average surface roughness (Rz) on the surface of the metal layer not in contact with the insulating protective film 22 is in the range of 0.1 to 5.0 μm. Is preferred.

  Furthermore, the thickness of the insulating protective film 22 in the semiconductor device 10 described above is preferably in the range of 5 to 50 μm, and the material of the insulating protective film 22 is not particularly limited. It is preferable to use an insulating protective film 22 made of a thermosetting resin such as a resin or an epoxy resin.

  The wiring pattern 14 is preferably formed of copper or a copper alloy, and the line width of the inner lead 16 of the wiring pattern 14 is preferably in the range of 5 to 40 μm.

Furthermore, the material of the sealing resin 32 is not particularly limited, but it is preferable to use a sealing resin 32 made of, for example, an epoxy resin.
By the way, as described above, the thickness and area of the heat dissipation means 24 depend on the size of the semiconductor device 10, the amount of heat generated from the mounted electronic component 20, the material of the heat dissipation means 24, the required specifications of the semiconductor device 10, and the like. It fluctuates within the specified numerical range.

  Therefore, by preparing the correlation of the fluctuating numerical values as an equation in advance, for example, in the same semiconductor device 10, when it is desired to increase the heat dissipation amount of the heat generated by the electronic component 20, the thickness of the heat dissipation means 24 can be increased. It is possible to immediately know how to change the area or the area of the heat dissipating means 24, and it is possible to quickly respond to a design change or the like.

here,
T = Assumed surface temperature of electronic parts (° C)
W = Thermal conductivity coefficient (W / m · K)
tMe = thickness of heat dissipation means (μm)
tR = thickness of insulating protective film (μm)
In the case where the formation area of the heat dissipating means 24 is substantially the same as the total area of the insulating protective film 22, the equation of correlation is as follows.

T = e1 * W- ^(a1) * tMe- ^(b1) * tR ^(c1) .. Formula (1)
In the above mathematical formula (1), e1 is preferably in the range of 50 to 250, more preferably in the range of 100 to 200, and even more preferably in the range of 140 to 180. A1 is preferably within the range of 0.12 to 0.07, more preferably within the range of 0.11 to 0.08, and further within the range of 0.10 to 0.09. Is particularly preferred. Further, b1 is preferably within the range of 0.12 to 0.07, more preferably within the range of 0.11 to 0.08, and further within the range of 0.10 to 0.09. Is particularly preferred. Furthermore, c1 is preferably in the range of 0.011 to 0.005, more preferably in the range of 0.010 to 0.006, and further in the range of 0.009 to 0.007. It is particularly preferred.

In addition, about the value of above-mentioned e1, it is a numerical value obtained from the multiple regression analysis which is one of the multivariate analyses.
In particular, if e1, a1, b1, and c1 in Expression (1) are set to a numerical value range as shown in Expression (1-1) below, the desired electronic component 20 can be obtained with high accuracy regardless of the type of each material. The estimated surface temperature can be calculated.

T = (140 to 180) × W ^{− (0.10 to 0.09)} × tMe ^{− (0.10 to 0.09)} × tR ^{(0.009 to 0.007)}
..Formula (1-1)
Temporarily, copper foil (copper thermal conductivity coefficient (W) = 381) is used as the material of the metal layer of the heat dissipation means 24, the thickness (tR) of the insulating protective film 22 is set to 40 μm, for example, and the thickness of the heat dissipation means 24 ( When tMe) is set to about 16 μm and these numerical values are substituted into Equation (1-1) to solve the equation, the assumed surface temperature (T) of the electronic component is calculated to be in the range of about 60 ° C. to 85 ° C. It is explained that 1-1) is a proper numerical range.

  In particular, e1 = 160.06, a1 = 0.0995, b1 = 0.0979, and c1 = 0.0085, and the thermal conductivity coefficient (W), the thickness of the heat radiation means (tMe), the thickness of the insulating protective film (tR ) Is the same numerical value as described above and Equation (1) is solved, the assumed surface temperature T is 69.7 ° C.

  When the surface temperature of the electronic component 20 that is actually manufactured by mounting the semiconductor device 10 under this condition is measured, it is about 72.5 ° C., and the estimated surface temperature obtained by substituting the above numerical value into the equation (1) ( It can be seen that T) is close to the measured surface temperature value.

  Furthermore, as shown in FIG. 2, when the formation area of the heat radiating means 24 is smaller than the total area of the insulating protective film 22, and the ratio of the area of the heat radiating means 24 to this is determined, the following equation is used: be able to.

T = e2 * W- ^(a2) * tMe- ^(b2) * tR ^(c2) * S- ^(d1) .. Formula (2)
In Equation (2), T, W, tMe, and tR are synonymous with Equation (1) except that S = the installation area ratio of the heat dissipation means (the installation area of the heat dissipation means / the total area of the insulating protective film). .

  In the above formula (2), e2 is preferably in the range of 50 to 250, more preferably in the range of 100 to 200, and even more preferably in the range of 140 to 180. A2 is preferably in the range of 0.12 to 0.07, more preferably in the range of 0.11 to 0.08, and further in the range of 0.10 to 0.09. Is particularly preferred. Furthermore, b2 is preferably in the range of 0.12 to 0.07, more preferably in the range of 0.11 to 0.08, and further in the range of 0.10 to 0.09. Is particularly preferred. Furthermore, c2 is preferably in the range of 0.011 to 0.005, more preferably in the range of 0.010 to 0.006, and further in the range of 0.009 to 0.007. Particularly preferably, d1 is preferably in the range of 0.11 to 0.06, more preferably in the range of 0.10 to 0.07, and further in the range of 0.09 to 0.08. It is particularly preferable to do this.

In addition, about the value of above-mentioned e2, it is a numerical value obtained by multiple regression analysis which is one of multivariate analysis similarly to e1 of Numerical formula (1).
In particular, when Formula (2) is changed to Formula (2-1) shown below, the estimated surface temperature of a desired electronic component can be calculated with high accuracy regardless of the type of each material.

T = (140-180) * W- ^(0.10-0.09) * tMe- ^(0.10-0.09) * tR ^{(0.009-0.007)} * S- ^{(0.09-0.08) ..} Formula (2-1)
Temporarily, copper foil (copper thermal conductivity coefficient (W) = 381) is used as the material of the metal layer of the heat dissipation means 24, the thickness (tR) of the insulating protective film 22 is set to 40 μm, for example, and the installation area ratio of the heat dissipation means 24 When (S) is 0.7, the thickness (tMe) of the heat dissipating means 24 is about 18 μm, and these numerical values are substituted into the equation (2-1) to solve the equation, the assumed surface temperature of the electronic component (T ) Is calculated as a range of approximately 60 ° C. to 85 ° C., and it is explained that the mathematical formula (2-1) is an appropriate numerical range.

  In particular, e2 = 157.52, a2 = 0.0995, b2 = 0.0979, c2 = 0.0085, d1 = 0.0851 are set, the thermal conductivity coefficient (W), the thickness of the heat radiation means (tMe), the insulation If formula (2) is solved with the thickness (tR) of the protective film and the installation area ratio (S) of the heat dissipating means as described above, the assumed surface temperature T is 69.9 ° C.

  When the surface temperature of the electronic component 20 actually manufactured by mounting the semiconductor device 10 under this condition is measured, it is about 73.4 ° C., and the assumed surface temperature ( It can be seen that T) is close to the measured surface temperature value.

  As described above, according to the embodiment of the present invention described with reference to FIGS. 1 and 2, the insulating protective film 22 involved in heat dissipation and the type and thickness of the heat dissipating means 24 disposed on the surface of the insulating protective film 22. By setting the area in advance, the measured surface temperature of the surface of the electronic component 20 can be made constant (assumed surface temperature) regardless of the amount of heat generated by the electronic component 20.

Next, another embodiment of the present invention will be described.
3 and 4 is basically the same as that shown in FIGS. 1 and 2 except that the heat dissipating means 24 is provided on the back surface of the polyimide substrate 12 with the adhesive layer 34 interposed therebetween. It is the same as that of the said Example demonstrated using FIG.

  In the semiconductor device 10 shown in FIG. 3 and FIG. 4, a heat radiating means 24 in which any one of thickness, area and metal type is adjusted is provided on the back surface of the polyimide substrate 12 via an adhesive layer 34. The heat radiation means 24 can bring the electronic component 20 to a predetermined temperature or lower.

  In the semiconductor device 10 shown in FIG. 3, the heat radiation means 24 provided on the back surface of the polyimide substrate 12 via the adhesive layer 34 is provided on the entire back surface of the polyimide substrate 12. As shown, it may be partially provided on the back surface of the polyimide substrate 12.

Here, as shown in FIG. 3, when the heat radiating means 24 is provided on the entire back surface of the polyimide substrate 12 via the adhesive layer 34, the following equation can be used.
T = e3 * W- ^(a3) * tMe- ^(b3) * tP ^(f1) .. Formula (3)
In Equation (3), T, W, and tMe other than tP = total thickness (μm) of the polyimide substrate 12 and the adhesive layer 34 are synonymous with Equation (1).

  In the above formula (3), e3 is preferably in the range of 50 to 250, more preferably in the range of 100 to 200, and even more preferably in the range of 140 to 180. A3 is preferably in the range of 0.12 to 0.07, more preferably in the range of 0.11 to 0.08, and further in the range of 0.10 to 0.09. Is particularly preferred. Further, b3 is preferably within a range of 0.12 to 0.07, more preferably within a range of 0.11 to 0.08, and further within a range of 0.10 to 0.09. Is particularly preferred. Further, f1 is preferably within the range of 0.011 to 0.005, more preferably within the range of 0.010 to 0.006, and further within the range of 0.009 to 0.007. Particularly preferred.

In addition, about the value of above-mentioned e3, it is a numerical value obtained by the multiple regression analysis which is one of the multivariate analysis similarly to e1 of Numerical formula (1).
In particular, when the formula (3) is changed to the following formula (3-1), the assumed surface temperature of a desired electronic component can be calculated with high accuracy regardless of the type of each material.

T = (140-180) * W- ^(0.10-0.09) * tMe- ^(0.10-0.09) * tP ^{(0.009-0.007) ..} Formula (3-1)
Assuming that a copper foil (copper thermal conductivity coefficient (W) = 381) is used as the material of the metal layer of the heat dissipation means 24, the total thickness (tP) of the polyimide substrate 12 and the adhesive layer 34 is, for example, 70 μm. When the thickness (tMe) of 24 is set to about 18 μm and these numerical values are substituted into the equation (3-1) to solve the equation, the assumed surface temperature (T) of the electronic component is in the range of about 60 ° C. to 85 ° C. It is calculated and it is explained that numerical formula (3-1) is an appropriate numerical range.

  In particular, e3 = 157.4, a3 = 0.0995, b3 = 0.0898, f1 = 0.0085, thermal conductivity coefficient (W), heat dissipation means thickness (tMe), polyimide substrate and adhesive layer Assuming that the total thickness (tP) is the same numerical value as described above and solving Equation (3), the assumed surface temperature T is 69.7 ° C.

  When the surface temperature of the electronic component 20 actually manufactured by mounting the semiconductor device 10 under this condition is measured, it is about 73.1 ° C., and the assumed surface temperature ( It can be seen that T) is close to the measured surface temperature value.

  Furthermore, as shown in FIG. 4, when the formation area of the heat dissipation means 24 is small with respect to the total area of the insulating protective film 22, and the ratio of the area of the heat dissipation means 24 to this is determined, the following equation is used: be able to.

T = e4 * W- ^(a4) * tMe- ^(b4) * tP ^(f2) * S- ^(d2) .. Formula (4)
In Equation (4), T, W, tMe, and tP are synonymous with Equation (3) except that S = the installation area ratio of the heat dissipation means (the installation area of the heat dissipation means / the area of the polyimide substrate).

  In the above formula (4), e4 is preferably in the range of 50 to 250, more preferably in the range of 100 to 200, and even more preferably in the range of 140 to 180. A4 is preferably in the range of 0.12 to 0.07, more preferably in the range of 0.11 to 0.08, and further in the range of 0.10 to 0.09. Is particularly preferred. Further, b4 is preferably in the range of 0.12 to 0.07, more preferably in the range of 0.11 to 0.08, and further in the range of 0.10 to 0.09. Is particularly preferred. Further, f2 is preferably within a range of 0.011 to 0.005, more preferably within a range of 0.010 to 0.006, and further within a range of 0.009 to 0.007. Particularly preferably, d2 is preferably in the range of 0.11 to 0.06, more preferably in the range of 0.10 to 0.07, and further in the range of 0.09 to 0.08. It is particularly preferable to do this.

In addition, about the value of above-mentioned e4, it is a numerical value obtained by the multiple regression analysis which is one of multivariate analysis similarly to e1 of Numerical formula (1).
In particular, when the formula (4) is changed to the following formula (4-1), the assumed surface temperature of a desired electronic component can be calculated with high accuracy regardless of the type of each material.

T = (140-180) * W- ^(0.10-0.09) * tMe- ^(0.10-0.09) * tP ^{(0.009-0.007)} * S- ^{(0.09-0.08) ..} Formula (4-1)
Temporarily, a copper foil (copper thermal conductivity coefficient (W) = 381) is used as the material of the metal layer of the heat dissipation means 24, and the total thickness (tP) of the polyimide substrate 12 and the adhesive layer 34 is set to 70 μm, for example. When the installation area ratio (S) of 24 is 0.7, the thickness (tMe) of the heat radiating means 24 is about 20 μm, and these numerical values are substituted into the equation (4-1), the equation is solved. The assumed surface temperature (T) is calculated as a range of about 60 ° C. to 85 ° C., and it is explained that the mathematical formula (4-1) is an appropriate numerical range.

  In particular, e4 = 154.90, a4 = 0.0995, b4 = 0.0898, f2 = 0.0085, d2 = 0.0851 are set, the thermal conductivity coefficient (W), the thickness of the heat dissipation means (tMe), polyimide If formula (4) is solved with the total thickness (tP) of the substrate and the adhesive layer and the installation area ratio (S) of the heat dissipating means as described above, the assumed surface temperature T becomes 70.0 ° C.

  When the surface temperature of the electronic component 20 actually manufactured by mounting the semiconductor device 10 under this condition is measured, it is about 73.5 ° C., and the estimated surface temperature (4) obtained by substituting the above numerical values (4) It can be seen that T) is close to the measured surface temperature value.

  As described above, according to another embodiment of the present invention described with reference to FIGS. 3 and 4, the insulating protective film 22 involved in heat dissipation and the type and thickness of the heat radiation means 24 disposed on the back surface of the polyimide substrate 12 are used. By setting the area in advance, the measured surface temperature of the surface of the electronic component 20 can be made constant (assumed surface temperature) regardless of the amount of heat generated by the electronic component 20.

  The present invention has a specific formula as compared with the prior art in which the heat dissipation of the semiconductor device could not be grasped other than by actually making a prototype and mounting an electronic component, and driving the electronic component and measuring its surface temperature. By substituting several values determined by the material of the electronic component 20 and the like, the surface temperature of the electronic component 20 when the semiconductor device 10 is driven can be calculated with high accuracy.

  Therefore, in the semiconductor device 10 according to the present invention, the heat dissipation means 24 in which any one of the thickness, the area, and the metal type is adjusted as described above, so that each of the electronic components 20 that are different from each other has a predetermined temperature or less. And can perform a predetermined function.

<Method for Manufacturing Semiconductor Device 10>
The semiconductor device 10 having the heat radiation means 24 on the surface of the insulating protective film 22 shown in FIG. 1 or FIG. 2 as described above is manufactured, for example, as follows.

First, as shown in FIG. 5A, the wiring pattern 14 is formed on the polyimide substrate 12.
Next, as shown in FIG. 5B, a laminated body 28 in which the insulating protective film 22 and the heat radiation means 24 are laminated is disposed on the upper surface of the polyimide substrate 12, and this laminated body 28 is predetermined by a method such as punching. Punched into a shape.

Then, as shown in FIG. 5C, a laminated body 28 of the insulating protective film 22 and the heat radiating means 24 punched out by the above process is disposed at a predetermined position of the wiring pattern 14.
Finally, as shown in FIG. 5D, the electronic component 20 such as an IC chip is mounted on the inner lead 16 portion of the wiring pattern 14 by a normal method, and the space between the electronic component 20 and the inner lead 16 portion is sealed. The semiconductor device 10 is formed by sealing with the stop resin 32.

  When the area of the heat dissipation means 24 is set smaller than the total area of the insulating protective film 22, the heat dissipation of the laminate 28 is performed as shown in FIG. 6A instead of the process of FIG. A cutting line 26 is provided in the means 24, punched out, and a laminated body 28 of the insulating protective film 22 and the heat radiating means 24 is disposed on the wiring pattern 14 as shown in FIG. What is necessary is just to remove the unnecessary part 30 of the means 24.

Next, a method for manufacturing the semiconductor device 10 having the heat radiation means 24 on the back surface of the polyimide substrate 12 shown in FIG. 3 or FIG. 4 will be described.
In the method for manufacturing the semiconductor device 10 shown in FIGS. 3 and 4, as shown in FIG. 7A, the heat radiation means 24 is first formed on the entire back surface of the polyimide substrate 12 via the adhesive layer 34 in advance. A laminated body is prepared, and a wiring pattern 14 is formed on the surface of the polyimide substrate 12.

Next, as shown in FIG. 7B, the insulating protective film 22 is disposed on the upper surface of the polyimide substrate 12, and the insulating protective film 22 is punched into a predetermined shape by a method such as punching.
Then, as shown in FIG. 7C, the insulating protective film 22 punched out by the above process is disposed at a predetermined location of the wiring pattern 14. Alternatively, a solder resist solution may be applied by screen printing and dried and cured.

  Finally, as shown in FIG. 7D, the electronic component 20 such as an IC chip is mounted on the inner lead 16 portion of the wiring pattern 14 by a normal method, and the space between the electronic component 20 and the inner lead 16 portion is sealed. The semiconductor device 10 is formed by sealing with the stop resin 32.

  When the area of the heat radiation means 24 is set smaller than the total area of the insulating protective film 22, the back surface of the polyimide substrate 12 is used as shown in FIG. 8A instead of the process of FIG. In addition, a laminate in which the heat radiation means 24 is partially formed through the adhesive layer 34 is prepared, and the wiring pattern 14 may be formed on the surface of the polyimide substrate 12.

  As mentioned above, although the preferable form of this invention was demonstrated, this invention is not limited to said form. For example, heat dissipation means made of a metal layer can be formed on both surfaces of the insulating protective film and the back surface of the polyimide substrate. Also, the semiconductor device of the present invention can be manufactured by a method other than the above-described manufacturing method. In short, except for using a heat radiating means in which any of the thickness, area, and type of metal is used, the semiconductor device of the present invention is used. Various modifications can be made without departing from the object.

  Next, the present invention will be described in more detail with reference to examples of the semiconductor device of the present invention. However, the present invention is not limited thereto.

[Example 1]
A copper film having a thickness of 8 μm was laminated on a polyimide film having a thickness of 40 μm, and a photoresist layer was coated on the surface of the copper foil. After drying the photoresist layer, a mask on which a pattern having a predetermined shape was formed was placed on the photoresist layer, and exposed and developed to form a photoresist pattern. Using this photoresist pattern as a masking material, the copper foil was etched by a conventional method to form a wiring pattern.

  An electronic component having a power consumption of 500 mW is mounted on the inner lead of this wiring pattern. When this electronic component is energized, its surface temperature measured in an adiabatic state is 98.7 ° C., but since the optimum driving temperature of this electronic component is 70 ° C., the assumed surface temperature T of this electronic component is 70 ° C. Set to.

  Substituting e1 = 160.06, a1 = 0.0995, b1 = 0.0979, c1 = 0.0085 into the following formula (1), the assumed surface temperature (T) = 70.0 ° C., the thermal conductivity coefficient of copper (W) = 381, The thickness (tR) of the heat radiation means was calculated by substituting the thickness (tR) = 40 μm of the cover lay which is an insulating protective film.

T = e1 * W- ^(a1) * tMe- ^(b1) * tR ^(c1) .. Formula (1)
As a result of calculating by substituting the above numerical values into the formula (1), the result was that the thickness (tMe) of the heat radiation means made of copper foil was 15.3 μm.

  For this reason, a tin plating layer was formed on the surface of the formed wiring pattern, and then a heat dissipation means made of an electrolytic copper foil having a thickness of 16 μm was laminated on the surface of the cover lay so as to expose the inner leads and the outer leads. A coverlay was applied. The average surface roughness (Rz) of the surface of the electrolytic copper foil not in contact with the coverlay was 0.9 μm.

  After the coverlay with the heat radiation means is attached on the wiring pattern in this way, the electronic component is mounted and sealed with a sealing resin. The electronic component is energized with a power of 500 mW, and the surface temperature of the electronic component (measured surface) As a result, the measured surface temperature of the electronic component was 69.7 ° C., which was in good agreement with the assumed surface temperature (T) assigned to the above formula (1).

[Example 2]
The formula used is the following formula (2), the value of e2 is 157.52, the value of d1 is 0.0851, and the installation area ratio (S) of the heat dissipation means 24 (the installation area of the heat dissipation means / the total of the insulating protective film) (Area) is set to 0.9, and the semiconductor device is manufactured by using the same method and the same numerical values as in Example 1 except that the values of a2, b2, and c2 are the same as the values of a1, b1, and c1 in Example 1. did.

T = e2 * W- ^(a2) * tMe- ^(b2) * tR ^(c2) * S- ^(d1) .. Formula (2)
When the numerical value described above is substituted into Equation (2), the thickness (tMe) of the heat radiating means made of copper foil is calculated to be 14.2 μm.

  When the surface temperature (measured surface temperature) of the electronic component of the semiconductor device manufactured according to Example 2 was measured, the measured surface temperature of the electronic component was 73.4 ° C., and the assumed surface temperature substituted into the above equation (2). It was in good agreement with (T).

[Example 3]
The mathematical formula used is the following mathematical formula (3), the value of e3 is 157.4, and the total thickness (tP) of the polyimide film and the adhesive layer is used instead of the thickness (tR) of the cover lay which is the insulating protective film 22. The total thickness (tP) of the polyimide film and the adhesive layer is 70 μm (polyimide film thickness 40 μm + adhesive layer thickness 30 μm), and the values of a3, b3, and f1 are a1, b1, and c1 of Example 1. A semiconductor device was manufactured by using the same method and the same numerical values as in Example 1 except that the value was the same as that of Example 1.

T = e3 * W- ^(a3) * tMe- ^(b3) * tP ^(f1) .. Formula (3)
When the numerical value described above is substituted into Equation (3), the thickness (tMe) of the heat radiating means made of copper foil is calculated to be 13.5 μm.

  When the surface temperature (measured surface temperature) of the electronic component of the semiconductor device manufactured according to Example 3 was measured, the measured surface temperature of the electronic component was 73.4 ° C., and the assumed surface temperature substituted into the above equation (3). It was in good agreement with (T).

[Example 4]
The mathematical formula used is the following mathematical formula (4), the value of e4 is 154.90, the value of d2 is 0.0851, and the installation area ratio (S) of the heat dissipation means 24 (the installation area of the heat dissipation means / the area of the polyimide substrate) Was set to 0.9, and the semiconductor device was manufactured using the same method and the same numerical values as in Example 3 except that the values of a4, b4, and f2 were the same as the values of a1, b1, and c1 in Example 1.

T = e4 * W- ^(a4) * tMe- ^(b4) * tP ^(f2) * S- ^(d2) .. Formula (4)
When the above numerical value is substituted into Equation (4), the thickness (tMe) of the heat radiating means made of copper foil is calculated to be 12.6 μm.

  When the surface temperature (measured surface temperature) of the electronic component of the semiconductor device manufactured according to Example 4 was measured, the measured surface temperature of the electronic component was 72.9 ° C., and the assumed surface temperature substituted into the above equation (4). It was in good agreement with (T).

DESCRIPTION OF SYMBOLS 10 ... Semiconductor device 12 ... Polyimide board 14 ... Wiring pattern 16 ... Inner lead 18 ... Outer lead 20 ... Electronic component 22 ... Insulation protective film 24 ... Heat radiation means 26 ... cut line 28 ... laminated body 30 ... unnecessary portion 32 ... sealing resin 34 ... adhesive layer 100 ... semiconductor device 102 ... polyimide substrate 104 ... wiring pattern 106 ... inner lead 108 ... outer lead 110 ... adhesive 112 ... copper foil 114 ... protective layer 116 ... electronic component

Claims (26)

A polyimide substrate, a wiring pattern formed on the surface of the polyimide substrate, and an electronic component bonded to an inner lead of the wiring pattern, and an insulating protective film on the surface excluding the lead portion of the wiring pattern Is a semiconductor device coated with
On the surface of the insulating protective film,
A semiconductor device comprising a heat radiation means made of a metal layer capable of lowering an actual surface temperature of an electronic component to an assumed surface temperature by adjusting any of a thickness, an area, and a metal type. A polyimide substrate, a wiring pattern formed on the surface of the polyimide substrate, and an electronic component bonded to an inner lead of the wiring pattern, and an insulating protective film on the surface excluding the lead portion of the wiring pattern Is a semiconductor device coated with
On the back surface of the polyimide substrate,
It has heat dissipation means consisting of a metal layer that can lower the measured surface temperature of the electronic component to the assumed surface temperature by adjusting any of the thickness, area, and type of metal via the adhesive layer A semiconductor device.   3. The semiconductor device according to claim 1, wherein the metal forming the metal layer of the heat radiating means has a thermal conductivity coefficient in a range of 50 to 450 W / m · K.   4. The semiconductor device according to claim 1, wherein the metal layer of the heat dissipation means is formed of a copper layer or an aluminum layer.   5. The semiconductor device according to claim 1, wherein a thickness of the metal layer of the heat radiating means is in a range of 5 to 100 μm.   6. The semiconductor device according to claim 1, wherein a formation area of the metal layer of the heat radiating means is in a range of 1 to 100% of a total area of the insulating protective film.   The semiconductor device according to claim 1, wherein the insulating protective film is a cover lay or a solder resist.   8. The semiconductor device according to claim 1, wherein a thickness of the insulating protective film is in a range of 5 to 100 [mu] m.   The average surface roughness (Rz) of the surface of the metal layer not in contact with the insulating protective film in the metal layer is in the range of 0.1 to 5.0 μm. The semiconductor device according to any one of 8. In a semiconductor device in which a heat dissipating means made of a metal layer capable of lowering the measured surface temperature of the electronic component to an assumed surface temperature is provided on the surface of the insulating protective film, the heat dissipating means is set by the following formula (1). The semiconductor device according to claim 1, wherein:
T = e1 * W- ^(a1) * tMe- ^(b1) * tR ^(c1) .. Equation (1) (In Equation (1), T is the assumed surface temperature (° C) of the electronic component, and W is the heat conduction. The coefficient (W / m · K), tMe represents the thickness (μm) of the heat radiation means, tR represents the thickness (μm) of the insulation protective film, and e1 represents the value when the heat radiation means is provided on the surface of the insulation protective film. A coefficient obtained by multiple regression analysis, which is in the range of 50 to 250, a1 is in the range of 0.12 to 0.07, b1 is in the range of 0.12 to 0.07, and c1 is 0. Within the range of .011 to 0.005). In a semiconductor device in which heat dissipating means made of a metal layer capable of lowering the measured surface temperature of the electronic component to an assumed surface temperature is partially provided on the surface of the insulating protective film, the heat dissipating means is expressed by the following formula (2). The semiconductor device according to claim 1, wherein the semiconductor device is set by:
T = e2 * W- ^(a2) * tMe- ^(b2) * tR ^(c2) * S- ^(d1) .. Formula (2) (In Formula (2), T is the assumed surface temperature of the electronic component (° C.) ), W is the thermal conductivity coefficient (W / m · K), tMe is the thickness of the heat dissipation means (μm), tR is the thickness of the insulating protective film (μm), and S is the installation area ratio of the heat dissipation means (of the heat dissipation means E2 is a coefficient obtained by multiple regression analysis when the heat radiation means is provided on the entire surface of the insulating protective film, and is in the range of 50 to 250, and a2 is in the range of 0.12 to 0.07, b2 is in the range of 0.12 to 0.07, c2 is in the range of 0.011 to 0.005, and d1 is in the range of 0.11 to 0.06. is there.). In a semiconductor device in which a heat dissipating means made of a metal layer capable of lowering the measured surface temperature of the electronic component to an assumed surface temperature is provided on the back surface of the polyimide substrate via the adhesive layer, the heat dissipating means is expressed by the following formula ( The semiconductor device according to claim 2, which is set according to 3);
T = e3 * W- ^(a3) * tMe- ^(b3) * tP ^(f1) .. Equation (3) (In Equation (3), T is the assumed surface temperature (° C) of the electronic component, and W is the heat conduction. Coefficient (W / m · K), tMe represents the thickness (μm) of the heat dissipation means, tP represents the total thickness (μm) of the polyimide substrate and the adhesive layer, and e3 is provided with the heat dissipation means on the surface of the insulating protective film. Is a coefficient obtained from the multiple regression analysis, and is in the range of 50 to 250, a3 is in the range of 0.12 to 0.07, and b3 is in the range of 0.12 to 0.07. , F1 is in the range of 0.011 to 0.005). In a semiconductor device in which heat dissipating means made of a metal layer capable of lowering the measured surface temperature of the electronic component to an assumed surface temperature is partially provided on the back surface of the polyimide substrate via the adhesive layer, the heat dissipating means is The semiconductor device according to claim 2, wherein the semiconductor device is set by the following mathematical formula (4):
T = e4 * W- ^(a4) * tMe- ^(b4) * tP ^(f2) * S- ^(d2) .. Equation (4) (In Equation (4), T is the assumed surface temperature of the electronic component (° C.) ), W is the thermal conductivity coefficient (W / m · K), tMe is the thickness of the heat dissipation means (μm), tP is the total thickness (μm) of the polyimide substrate and the adhesive layer, and S is the area ratio of the heat dissipation means (Equipment area of heat radiation means / area of polyimide substrate) e4 is a coefficient obtained from multiple regression analysis when heat radiation means is provided on the entire surface of the insulating protective film, and is in the range of 50 to 250. Further, a4 is in the range of 0.12 to 0.07, b4 is in the range of 0.12 to 0.07, f2 is in the range of 0.011 to 0.005, and d2 is in the range of 0.11 to 0.06. In.) at least,
Forming a wiring pattern on the surface of the polyimide substrate, and mounting electronic components on the inner leads of the wiring pattern;
Coating an insulating protective film on the surface except the lead portion of the wiring pattern;
A method of manufacturing a semiconductor device having
A step of forming a heat radiation means comprising a metal layer on the surface of the insulating protective film, which can lower the measured surface temperature of the electronic component to an assumed surface temperature by adjusting any of the thickness, area, and type of metal. When,
A method for manufacturing a semiconductor device, comprising: at least,
Forming a wiring pattern on the surface of the polyimide substrate, and mounting electronic components on the inner leads of the wiring pattern;
Coating an insulating protective film on the surface except the lead portion of the wiring pattern;
A method of manufacturing a semiconductor device having
On the back surface of the polyimide substrate, an adhesive layer is provided with a heat dissipating means composed of a metal layer that can lower the measured surface temperature of the electronic component to an assumed surface temperature by adjusting any of the thickness, area, and type of metal. Forming through
A method for manufacturing a semiconductor device, comprising:   16. The method of manufacturing a semiconductor device according to claim 14, wherein the metal forming the metal layer of the heat radiating means has a thermal conductivity coefficient in the range of 50 to 450 W / m · K.   The method for manufacturing a semiconductor device according to claim 14, wherein the metal layer of the heat radiating means is formed of a copper layer or an aluminum layer.   18. The method of manufacturing a semiconductor device according to claim 14, wherein a thickness of the metal layer of the heat radiating means is in a range of 5 to 100 μm.   The method for manufacturing a semiconductor device according to claim 14, wherein a formation area of the metal layer of the heat radiating means is in a range of 1 to 100% of a total area of the insulating protective film.   The method for manufacturing a semiconductor device according to claim 14, wherein the insulating protective film is a cover lay or a solder resist.   21. The method of manufacturing a semiconductor device according to claim 14, wherein a thickness of the insulating protective film is in a range of 5 to 100 [mu] m.   The average surface roughness (Rz) of the surface of the metal layer that is not in contact with the insulating protective film in the metal layer is in the range of 0.1 to 5.0 μm. 22. A method for manufacturing a semiconductor device according to any one of 21. In a method for manufacturing a semiconductor device, in which a heat radiating means made of a metal layer capable of lowering an actual surface temperature of the electronic component to an assumed surface temperature is provided on the surface of the insulating protective film, the heat radiating means is expressed by the following formula (1). The method of manufacturing a semiconductor device according to claim 14, wherein:
T = e1 * W- ^(a1) * tMe- ^(b1) * tR ^(c1) .. Equation (1) (In Equation (1), T is the assumed surface temperature (° C) of the electronic component, and W is the heat conduction. The coefficient (W / m · K), tMe represents the thickness (μm) of the heat radiation means, tR represents the thickness (μm) of the insulation protective film, and e1 represents the value when the heat radiation means is provided on the surface of the insulation protective film. A coefficient obtained by multiple regression analysis, which is in the range of 50 to 250, a1 is in the range of 0.12 to 0.07, b1 is in the range of 0.12 to 0.07, and c1 is 0. Within the range of .011 to 0.005). In a method of manufacturing a semiconductor device, in which a heat dissipating means made of a metal layer capable of lowering the measured surface temperature of the electronic component to an assumed surface temperature is partially provided on the surface of the insulating protective film, the heat dissipating means is expressed by the following formula: 20. The method of manufacturing a semiconductor device according to claim 14, wherein the semiconductor device manufacturing method is set according to (2);
T = e2 * W- ^(a2) * tMe- ^(b2) * tR ^(c2) * S- ^(d1) .. Formula (2) (In Formula (2), T is the assumed surface temperature of the electronic component (° C.) ), W is the thermal conductivity coefficient (W / m · K), tMe is the thickness of the heat dissipation means (μm), tR is the thickness of the insulating protective film (μm), and S is the installation area ratio of the heat dissipation means (of the heat dissipation means E2 is a coefficient obtained by multiple regression analysis when the heat radiation means is provided on the entire surface of the insulating protective film, and is in the range of 50 to 250, and a2 is in the range of 0.12 to 0.07, b2 is in the range of 0.12 to 0.07, c2 is in the range of 0.011 to 0.005, and d1 is in the range of 0.11 to 0.06. is there.). In the method of manufacturing a semiconductor device, in which a heat dissipation means made of a metal layer capable of lowering the measured surface temperature of the electronic component to an assumed surface temperature is provided on the back surface of the polyimide substrate via the adhesive layer, the heat dissipation means is The semiconductor device manufacturing method according to claim 15, wherein the semiconductor device manufacturing method is set by the following mathematical formula (3):
T = e3 * W- ^(a3) * tMe- ^(b3) * tP ^(f1) .. Equation (3) (In Equation (3), T is the assumed surface temperature (° C) of the electronic component, and W is the heat conduction. Coefficient (W / m · K), tMe represents the thickness (μm) of the heat dissipation means, tP represents the total thickness (μm) of the polyimide substrate and the adhesive layer, and e3 is provided with the heat dissipation means on the surface of the insulating protective film. Is a coefficient obtained from the multiple regression analysis, and is in the range of 50 to 250, a3 is in the range of 0.12 to 0.07, and b3 is in the range of 0.12 to 0.07. , F1 is in the range of 0.011 to 0.005). In a method of manufacturing a semiconductor device, in which a heat dissipating means made of a metal layer capable of lowering the measured surface temperature of the electronic component to an assumed surface temperature is partially provided on the surface of the insulating protective film, the heat dissipating means is expressed by the following formula: 20. The method of manufacturing a semiconductor device according to claim 15, wherein the semiconductor device manufacturing method is set according to (4);
T = e4 * W- ^(a4) * tMe- ^(b4) * tP ^(f2) * S- ^(d2) .. Equation (4) (In Equation (4), T is the assumed surface temperature of the electronic component (° C.) ), W is the thermal conductivity coefficient (W / m · K), tMe is the thickness of the heat dissipation means (μm), tP is the total thickness (μm) of the polyimide substrate and the adhesive layer, and S is the area ratio of the heat dissipation means (Equipment area of heat radiation means / area of polyimide substrate) e4 is a coefficient obtained from multiple regression analysis when heat radiation means is provided on the entire surface of the insulating protective film, and is in the range of 50 to 250. Further, a4 is in the range of 0.12 to 0.07, b4 is in the range of 0.12 to 0.07, f2 is in the range of 0.011 to 0.005, and d2 is in the range of 0.11 to 0.06. In.)

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