JP2010010562A - Power module insulating substrate and its carrying method - Google Patents

Power module insulating substrate and its carrying method Download PDF

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JP2010010562A
JP2010010562A JP2008170448A JP2008170448A JP2010010562A JP 2010010562 A JP2010010562 A JP 2010010562A JP 2008170448 A JP2008170448 A JP 2008170448A JP 2008170448 A JP2008170448 A JP 2008170448A JP 2010010562 A JP2010010562 A JP 2010010562A
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power module
substrate
ceramic substrate
insulating substrate
brazing
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JP5062061B2 (en
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Shinsuke Aoki
慎介 青木
Toshiyuki Nagase
敏之 長瀬
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Mitsubishi Materials Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a power module insulating substrate free from cracking under severe thermal cycling environment, and to provide its carrying method. <P>SOLUTION: The power module insulating substrate 21 comprises brazing filler metal foils 23 pasted onto both sides of a ceramic substrate 2 via resin coating layers 22 which are each formed by applying a coating of an organic matter resin such as octane diol to the surface thereof. The plurality of sets of insulating substrates 21 are carried in a state of being laminated so that the brazing filler metal foils 23 come into contact with each other. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、大電流、高電圧を制御する半導体装置に用いられるパワーモジュール用絶縁基板及びその搬送方法に関する。   The present invention relates to an insulating substrate for a power module used in a semiconductor device that controls a large current and a high voltage, and a method for transporting the same.

一般に、半導体素子の中でも電力供給のためのパワーモジュールは発熱量が比較的高いため、このパワーモジュール用基板としては、例えば特許文献１に示されるように、ＡｌＮ、Ａｌ２Ｏ３、Ｓｉ３Ｎ４、ＳｉＣ等からなるセラミックス基板上にアルミニウム板等の金属板をＡｌ−Ｓｉ系等のろう材料を介して接合させたものが用いられている。この金属板は、後工程のエッチング処理によって所望パターンの回路が形成されて回路層となる。そして、エッチング後は、この回路層の表面にはんだ材を介して電子部品（半導体チップ等のパワー素子）が搭載され、パワーモジュールとなるのである。
一方、この種のパワーモジュールは、回路層とは反対側の面が放熱のために冷却器に取り付けられるが、その場合に、セラミックス基板に放熱用金属板を接合し、該放熱用金属板を冷却器に接合するようにしている。また、特許文献２記載のパワーモジュールでは、放熱用金属板をセラミックス基板と熱膨張率の近似した材料からなる緩衝層を介在させて冷却器に接合することにより、熱歪みの発生を防止するようにしている。
特開２００４−３５６５０２号公報 特開２００７−２７３７０６号公報 In general, a power module for supplying power among semiconductor elements has a relatively high calorific value. As this power module substrate, for example, as shown in Patent Document 1, AlN, Al 2 O 3 , Si 3 N 4. A metal substrate such as an aluminum plate joined to a ceramic substrate made of SiC or the like via a brazing material such as an Al-Si type is used. This metal plate becomes a circuit layer by forming a circuit having a desired pattern by an etching process in a later step. Then, after etching, an electronic component (power element such as a semiconductor chip) is mounted on the surface of the circuit layer via a solder material to form a power module.
On the other hand, in this type of power module, the surface opposite to the circuit layer is attached to a cooler for heat dissipation. In this case, a metal plate for heat dissipation is joined to a ceramic substrate, and the metal plate for heat dissipation is attached. It is made to join with a cooler. Further, in the power module described in Patent Document 2, the heat radiating metal plate is joined to the cooler with a buffer layer made of a material having a thermal expansion coefficient approximate to that of the ceramic substrate, thereby preventing the occurrence of thermal distortion. I have to.
JP 2004-356502 A JP 2007-273706 A

ところで、近年、構造簡略化等の要請に伴い、緩衝層や放熱用金属板を使わずにセラミックス基板を冷却器に直接接触させることが検討されており、パワーモジュールとしては過酷な環境（熱サイクル）への適用が要求されてきている。
しかしながら、通常のハンドリングではセラミックス基板の表面にわずかなすり傷が発生し易く、セラミックス基板への熱サイクル環境が厳しくなると、その傷が起点となってセラミックス基板の割れにつながるという懸念が生じてきた。この場合、セラミックス基板の表面を再研磨することも考えられるが、再研磨により、いわゆるマイクロクラックが発生して、新たな割れの原因となるおそれがある。 By the way, in recent years, due to the demand for structural simplification and the like, it has been studied to directly contact the ceramic substrate with the cooler without using a buffer layer or a heat radiating metal plate. ) Has been required to be applied.
However, in ordinary handling, slight scratches are likely to occur on the surface of the ceramic substrate, and if the thermal cycle environment to the ceramic substrate becomes severe, there is a concern that the scratch will be the starting point and lead to cracking of the ceramic substrate. . In this case, the surface of the ceramic substrate may be repolished. However, the repolishing may cause so-called microcracks, which may cause new cracks.

本発明は、このような事情に鑑みてなされたものであって、過酷な熱サイクル環境の下でも割れ等の発生のないパワーモジュール用絶縁基板及びその搬送方法を提供することを目的とする。   This invention is made | formed in view of such a situation, Comprising: It aims at providing the insulating substrate for power modules which does not generate | occur | produce a crack etc. also in the severe thermal cycling environment, and its conveying method.

従来のセラミックス基板は、合紙を介在させた状態で複数枚積み重ねられ、その積み重ね状態で搬送される。また、このセラミックス基板の表面に金属板をろう付けする際には、積み重ね状態のセラミックス基板を１枚ずつ取り出しながら、合紙を外して表面の傷を検査するが、このときに表面のすり傷が発見されることが多い。このすり傷は、搬送中の振動等によってセラミックス基板の表面が擦られることにより生じるものと考えられる。本発明者は、このすり傷をなくせば、セラミックス基板の割れの問題が解消すると考え、以下の解決手段を採用した。   A plurality of conventional ceramic substrates are stacked with interleaving paper interposed therebetween, and conveyed in the stacked state. When brazing a metal plate to the surface of this ceramic substrate, the interleaving paper is removed and the surface scratches are inspected while taking out the stacked ceramic substrates one by one. Is often discovered. This scratch is considered to be caused by the surface of the ceramic substrate being rubbed by vibration during transportation. The present inventor considered that the problem of cracking of the ceramic substrate would be solved by eliminating this scratch, and adopted the following solution.

すなわち、本発明のパワーモジュール用絶縁基板は、セラミックス基板の両面に、これらの表面に有機物樹脂がコーティングされた樹脂コーティング層を介してろう材箔がそれぞれ貼付されたことを特徴とする。
このパワーモジュール用絶縁基板は、両面に貼付されたろう材箔によってセラミックス基板の表面が覆われた状態となっている。しかも、これらろう材箔は、樹脂コーティング層によってセラミックス基板の表面に仮止めされており、搬送中の振動等によって動くことはない。 That is, the insulating substrate for a power module according to the present invention is characterized in that the brazing material foil is pasted on both surfaces of the ceramic substrate via a resin coating layer coated with an organic resin on these surfaces.
The insulating substrate for power module is in a state where the surface of the ceramic substrate is covered with the brazing material foil stuck on both sides. In addition, these brazing material foils are temporarily fixed to the surface of the ceramic substrate by the resin coating layer, and do not move due to vibration during transportation.

本発明のパワーモジュール用絶縁基板において、前記有機物樹脂はオクタンジオールである構成としてもよい。
オクタンジオールは、可塑剤等として用いられているもので、常温で液体（融点−４０℃以下）であるので、コーティングし易く、また、沸点も２４４℃であり、その後のろう付け温度（例えば６４０℃）で完全に脱脂される。 In the insulating substrate for a power module of the present invention, the organic resin may be octanediol.
Octanediol is used as a plasticizer and is a liquid at normal temperature (melting point: −40 ° C. or lower). Therefore, it is easy to coat, has a boiling point of 244 ° C., and has a subsequent brazing temperature (for example, 640). Deg.) Completely degreased.

一方、本発明のパワーモジュール用絶縁基板の搬送方法は、セラミックス基板の両面に有機物樹脂をコーティングして樹脂コーティング層を形成するとともに、その樹脂コーティング層の上にろう材箔を貼付した状態として搬送することを特徴とする。
また、本発明のパワーモジュール用絶縁基板の搬送方法において、前記パワーモジュール用絶縁基板を複数組積み重ね、この積み重ね状態で搬送する構成としてもよい。
このパワーモジュール用絶縁基板は、両面にろう材箔が貼付されているので、これを積み重ね状態とする場合、ろう材箔どうしが接触することになり、セラミックス基板どうしが直接接触することはない。したがって、搬送中に振動等が生じたとしても、セラミックス基板表面が擦れることはなく、すり傷の発生を確実に防止することができる。 On the other hand, the method for transporting an insulating substrate for a power module according to the present invention is such that a resin coating layer is formed by coating an organic resin on both surfaces of a ceramic substrate, and a brazing material foil is stuck on the resin coating layer. It is characterized by doing.
Moreover, in the conveyance method of the insulating substrate for power modules of this invention, it is good also as a structure which stacks two or more sets of the said insulating substrate for power modules, and conveys in this stacked state.
Since the brazing material foil is pasted on both sides of this insulating substrate for power modules, when it is stacked, the brazing material foils are in contact with each other, and the ceramic substrates are not in direct contact with each other. Therefore, even if vibration or the like occurs during conveyance, the surface of the ceramic substrate is not rubbed, and the generation of scratches can be reliably prevented.

本発明によれば、セラミックス基板の両面に有機物樹脂をコーティングしてろう材箔を貼付した状態としているから、セラミックス基板の表面がろう材箔により覆われるとともに、このろう材箔が樹脂コーティング層によって仮止めされて動かないので、セラミックス基板の表面にすり傷が発生することを防止することができる。したがって、このセラミックス基板を用いたパワーモジュール用基板は、過酷な熱サイクル条件でも割れ等が生じにくく、その上にろう付けされる回路層用金属板の密着性も向上し、絶縁基板としての信頼性を高めることができる。しかも、予めろう箔が設けられているから、そのろう付け作業性もよい。   According to the present invention, the surface of the ceramic substrate is covered with the brazing material foil and the brazing material foil is covered with the resin coating layer because the organic resin is coated on both surfaces of the ceramic substrate and the brazing material foil is pasted. Since it is temporarily fixed and does not move, it is possible to prevent the surface of the ceramic substrate from being scratched. Therefore, the power module substrate using this ceramic substrate is less susceptible to cracking even under severe thermal cycle conditions, and the adhesion of the metal plate for the circuit layer brazed thereon is improved, making it a reliable substrate for insulation. Can increase the sex. Moreover, since the brazing foil is provided in advance, the brazing workability is also good.

以下、本発明の一実施形態を図面を参照しながら説明する。
最初に、本発明に係るパワーモジュール用絶縁基板が用いられるパワーモジュールについて図１により説明しておくと、このパワーモジュール１は、セラミックス基板２を有するパワーモジュール用基板３と、該パワーモジュール用基板３の表面に搭載された半導体チップ等の電子部品４と、パワーモジュール用基板３の裏面に接合される冷却器５とから構成されている。 Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
First, a power module using an insulating substrate for a power module according to the present invention will be described with reference to FIG. 1. This power module 1 includes a power module substrate 3 having a ceramic substrate 2 and the power module substrate. 3 is composed of an electronic component 4 such as a semiconductor chip mounted on the surface of 3 and a cooler 5 bonded to the back surface of the power module substrate 3.

パワーモジュール用基板３は、セラミックス基板２の表面側に電子部品４を搭載するための回路層用金属板６が積層され、セラミックス基板２の裏面側に放熱層用金属板７が積層され、この放熱層用金属板７に冷却器５が取り付けられる構成である。
また、セラミックス基板２は、例えばＡｌＮ（窒化アルミニウム）、Ｓｉ３Ｎ４（窒化珪素）等の窒化物系セラミックス、若しくはＡｌ２Ｏ３（アルミナ）等の酸化物系セラミックスを母材として形成されている。回路層用金属板６は、純アルミニウム若しくはアルミニウム合金により形成され、放熱層用金属板７は、純度９９．０ｗｔ％以上の純アルミニウムにより形成されている。 In the power module substrate 3, a circuit layer metal plate 6 for mounting the electronic component 4 is laminated on the front surface side of the ceramic substrate 2, and a heat dissipation layer metal plate 7 is laminated on the back surface side of the ceramic substrate 2. The cooler 5 is attached to the metal plate 7 for heat dissipation layer.
Further, the ceramic substrate 2 is formed using, for example, a nitride ceramic such as AlN (aluminum nitride), Si 3 N 4 (silicon nitride), or an oxide ceramic such as Al 2 O 3 (alumina) as a base material. Yes. The circuit layer metal plate 6 is made of pure aluminum or an aluminum alloy, and the heat dissipation layer metal plate 7 is made of pure aluminum having a purity of 99.0 wt% or more.

また、これらセラミックス基板２、回路層用金属板６、放熱層用金属板７の相互間はろう付けによって接合されており、これら両金属板６，７のうち、回路層用金属板６には、エッチング処理がされて所望の回路パターンが形成されている。また、この回路層用金属板６は、その表面に、ニッケルめっき等のめっき被膜８が形成されている。   The ceramic substrate 2, the circuit layer metal plate 6, and the heat dissipation layer metal plate 7 are joined together by brazing. Of these two metal plates 6, 7, the circuit layer metal plate 6 includes Etching is performed to form a desired circuit pattern. The circuit layer metal plate 6 has a plating film 8 such as nickel plating formed on the surface thereof.

そして、回路層用金属板６の上に、Ｓｎ−Ａｇ−Ｃｕ系、Ｚｎ−Ａｌ系若しくはＰｂ−Ｓｎ系等のはんだ材によって電子部品４が接合される。図中符号９がそのはんだ接合層を示す。なお、電子部品４と回路層用金属板６の端子部との間は、アルミニウムからなるボンディングワイヤ（図示略）により接続される。
一方、冷却器５は、アルミニウム合金の押し出し成形によって形成され、その長さ方向に沿って冷却水を流通させるための多数の流路１０が形成されており、パワーモジュール用基板３との間はろう付け、はんだ付け、ボルト等によって接合される。 And the electronic component 4 is joined on the metal plate 6 for circuit layers by solder materials, such as Sn-Ag-Cu type, Zn-Al type, or Pb-Sn type. Reference numeral 9 in the drawing indicates the solder joint layer. The electronic component 4 and the terminal portion of the circuit layer metal plate 6 are connected by a bonding wire (not shown) made of aluminum.
On the other hand, the cooler 5 is formed by extrusion molding of an aluminum alloy, and is formed with a large number of flow paths 10 for circulating cooling water along the length direction thereof. Joined by brazing, soldering, bolts, etc.

このように構成されるパワーモジュール１を製造する場合、セラミックス基板２については、その両面にろう材箔が貼付されたパワーモジュール用絶縁基板２１として提供される。
このパワーモジュール用絶縁基板２１は、図２に示すように、セラミックス基板２の両面に有機物樹脂がコーティングされ、その樹脂コーティング層２２の上にろう材箔２３が貼付された構成とされている。樹脂コーティング層２２の有機物樹脂としてはオクタンジオールが用いられる。また、ろう材箔２３としては、Ａｌ−Ｓｉ系、Ａｌ−Ｇｅ系、Ａｌ−Ｃｕ系、Ａｌ−Ｍｇ系またはＡｌ−Ｍｎ系等が用いられる。 When manufacturing the power module 1 configured as described above, the ceramic substrate 2 is provided as an insulating substrate 21 for a power module in which a brazing material foil is pasted on both surfaces thereof.
As shown in FIG. 2, the power module insulating substrate 21 is configured such that an organic resin is coated on both surfaces of the ceramic substrate 2, and a brazing material foil 23 is stuck on the resin coating layer 22. Octanediol is used as the organic resin of the resin coating layer 22. As the brazing filler metal foil 23, Al-Si, Al-Ge, Al-Cu, Al-Mg, Al-Mn, or the like is used.

このパワーモジュール用絶縁基板２１は、このようにしてセラミックス基板２の両面にろう材箔２３を貼付した状態で図３に示すように複数枚積み重ねられ、その積み重ね状態で搬送される。そして、ろう付け工程では、積み重ね状態の中から絶縁基板２１を１枚ずつ取り出して、図４に示すように、その両面のろう材箔２３に各金属板６，７を積層して一つのユニットとし、そのユニットを間にカーボン等を介在させた状態で複数ユニット積層した状態に組み立てる。この積層体（図示略）を熱処理炉の中に入れ、不活性ガス雰囲気、還元ガス雰囲気又は真空雰囲気において積層方向に加圧した状態で加熱し、ろう材箔を溶融させることによって両金属板６．７をセラミックス基板２にろう付けする。   A plurality of the power module insulating substrates 21 are stacked as shown in FIG. 3 with the brazing filler metal foil 23 attached to both surfaces of the ceramic substrate 2 in this manner, and are conveyed in the stacked state. Then, in the brazing process, the insulating substrates 21 are taken out one by one from the stacked state, and as shown in FIG. 4, the metal plates 6 and 7 are laminated on the brazing material foils 23 on both sides to form one unit. Then, the unit is assembled in a state where a plurality of units are laminated with carbon or the like interposed therebetween. The laminated body (not shown) is placed in a heat treatment furnace, heated in an inert gas atmosphere, a reducing gas atmosphere or a vacuum atmosphere in a state of being pressurized in the laminating direction, and the both metal plates 6 are melted by melting the brazing material foil. 7 is brazed to the ceramic substrate 2.

このようにしてろう付け処理がなされると、図５に示すように、セラミックス基板２の両面に金属板６，７が接合したパワーモジュール用基板３が製造される。
その後は、回路層用金属板６，７をエッチングして回路パターンを形成し、その上にめっき被膜８を形成した後、冷却器５への接合、電子部品４のはんだ付け、ワイヤボンディング等を経て、パワーモジュール１として完成する。 When the brazing process is performed in this manner, the power module substrate 3 in which the metal plates 6 and 7 are bonded to both surfaces of the ceramic substrate 2 is manufactured as shown in FIG.
Thereafter, the circuit layer metal plates 6 and 7 are etched to form a circuit pattern, and a plating film 8 is formed thereon, followed by bonding to the cooler 5, soldering of the electronic component 4, wire bonding, and the like. After that, the power module 1 is completed.

この一連の製造工程において、絶縁基板２１は、セラミックス基板２の両面に樹脂コーティング層２２を介してろう材箔２３が貼付され、このろう材箔２３によって表面が覆われた状態で取り扱われる。このため、この絶縁基板２１を積み重ねた状態で搬送する際にも、ろう材箔２３どうしが接触し、セラミックス基板２は他のセラミックス基板２には接触しない。したがって、この搬送中に振動等を受けたとしても、セラミックス基板２にすり傷等が発生することが拘束される。そして、この積み重ね状態の中から絶縁基板２１を１枚ずつ取り出して、両金属板６，７のろう付け作業を行う際にも、従来の合紙を挟んだ形態であると、合紙を剥がしてセラミックス基板の表面の傷発生状況を確認した後にろう付け作業を行う必要があったが、本実施形態の場合は、セラミックス基板２がろう材箔２３により覆われた状態で、すり傷の発生がないとともに、ろう材箔２３が既に貼付されているため、そのまま金属板６，７を積層してろう付け作業を行うことができ、作業性がよい。   In this series of manufacturing steps, the insulating substrate 21 is handled in a state in which the brazing material foil 23 is attached to both surfaces of the ceramic substrate 2 via the resin coating layer 22 and the surface is covered with the brazing material foil 23. For this reason, also when conveying this insulating substrate 21 in a stacked state, the brazing material foils 23 are in contact with each other, and the ceramic substrate 2 is not in contact with other ceramic substrates 2. Therefore, even if vibration or the like is received during the conveyance, the ceramic substrate 2 is restrained from being scratched. When the insulating substrates 21 are taken out one by one from the stacked state and the two metal plates 6 and 7 are brazed, the interleaving paper is peeled off when the conventional interleaving paper is sandwiched. It was necessary to perform a brazing operation after confirming the state of occurrence of scratches on the surface of the ceramic substrate. However, in this embodiment, scratches are generated with the ceramic substrate 2 covered with the brazing material foil 23. In addition, since the brazing material foil 23 is already pasted, the metal plates 6 and 7 can be laminated as they are, and the brazing operation can be performed.

また、このろう付け処理においては、熱処理炉内が例えば６４０℃の高温状態とされることから、樹脂コーティング層２２はその熱によってろう材箔２３の溶融前に揮発してしまい、セラミックス基板２の表面は脱脂されるので、ろう付けを阻害することはなく、金属板６，７を確実に密着させることができる。
そして、セラミックス基板２にすり傷が生じていないので、その後の過酷な熱サイクル環境下においても、割れ等の発生がなく、パワーモジュール用基板３としての健全性を長期に維持することができる。 Further, in this brazing process, since the inside of the heat treatment furnace is brought to a high temperature state of, for example, 640 ° C., the resin coating layer 22 is volatilized by the heat before the brazing foil 23 is melted. Since the surface is degreased, brazing is not hindered, and the metal plates 6 and 7 can be reliably adhered.
And since the ceramic substrate 2 is not scratched, even in a severe heat cycle environment thereafter, there is no occurrence of cracks and the like, and the soundness as the power module substrate 3 can be maintained for a long time.

以上、本発明の実施形態について図面を参照して詳述したが、具体的な構成はこの実施形態に限られるものではなく、本発明の要旨を逸脱しない範囲の設計変更等も含まれる。
例えば、前記実施形態では、セラミックス基板の両面に金属板をろう付け接合したが、回路層用金属板のみ接合し、反対面にはセラミックス基板に冷却器を直接ろう付けする構成としてもよい。また、樹脂コーティング層の有機物樹脂としてはオクタンジオールが好適であるが、ろう材箔を貼付した状態で仮止めすることができ、ろう付け時の熱によってろう材箔の溶融前に脱脂し得るものであれば、他の樹脂を適用してもよい。 As mentioned above, although embodiment of this invention was explained in full detail with reference to drawings, the concrete structure is not restricted to this embodiment, The design change etc. of the range which does not deviate from the summary of this invention are included.
For example, in the above-described embodiment, the metal plates are brazed and bonded to both surfaces of the ceramic substrate, but only the metal plate for the circuit layer may be bonded and the cooler may be directly brazed to the ceramic substrate on the opposite surface. In addition, octanediol is suitable as the organic resin for the resin coating layer, but it can be temporarily fixed with the brazing foil attached, and can be degreased before the brazing foil is melted by heat during brazing. If so, other resins may be applied.

本発明に係るパワーモジュール用絶縁基板を用いて製作されるパワーモジュールの全体構成例を示す縦断面図である。It is a longitudinal section showing the example of whole composition of the power module manufactured using the insulating substrate for power modules concerning the present invention. パワーモジュール用絶縁基板の一実施例を示す斜視図である。It is a perspective view which shows one Example of the insulated substrate for power modules. 図２のパワーモジュール用絶縁基板を複数個積み重ねた状態を示す縦断面図である。FIG. 3 is a longitudinal sectional view showing a state in which a plurality of power module insulating substrates of FIG. 2 are stacked. 図２のパワーモジュール用絶縁基板の両面に金属板を配置した状態を示す縦断面図である。It is a longitudinal cross-sectional view which shows the state which has arrange | positioned the metal plate on both surfaces of the insulating substrate for power modules of FIG. 図４に示す状態から金属板をろう付け接合してなるパワーモジュール用基板を示す縦断面図である。It is a longitudinal cross-sectional view which shows the board | substrate for power modules formed by brazing a metal plate from the state shown in FIG.

符号の説明Explanation of symbols

１ パワーモジュール
２ セラミックス基板
３ パワーモジュール用基板
４ 電子部品
５ 冷却器
６ 回路層用金属板
７ 放熱層用金属板
８ めっき被膜
９ はんだ接合層
１０ 流路
２１ パワーモジュール用絶縁基板
２２ 樹脂コーティング層
２３ ろう材箔 DESCRIPTION OF SYMBOLS 1 Power module 2 Ceramic substrate 3 Power module substrate 4 Electronic component 5 Cooler 6 Metal plate for circuit layer 7 Metal plate for heat dissipation layer 8 Plating film 9 Solder joint layer 10 Channel 21 Insulation substrate 22 for power module Resin coating layer 23 Brazing foil

Claims (4)

セラミックス基板の両面に、これらの表面に有機物樹脂がコーティングされた樹脂コーティング層を介してろう材箔がそれぞれ貼付されたことを特徴とするパワーモジュール用絶縁基板。   An insulating substrate for a power module, characterized in that a brazing material foil is attached to both surfaces of a ceramic substrate via a resin coating layer on which an organic resin is coated. 前記有機物樹脂はオクタンジオールであることを特徴とする請求項１記載のパワーモジュール用絶縁基板。   2. The insulating substrate for a power module according to claim 1, wherein the organic resin is octanediol. セラミックス基板の両面に有機物樹脂をコーティングして樹脂コーティング層を形成するとともに、その樹脂コーティング層の上にろう材箔を貼付した状態として搬送することを特徴とするパワーモジュール用絶縁基板の搬送方法。   A method for transporting an insulating substrate for a power module, comprising coating a ceramic resin on both surfaces of a ceramic substrate to form a resin coating layer, and transporting the resin coating layer in a state where a brazing filler metal foil is stuck on the resin coating layer. 前記パワーモジュール用絶縁基板を複数組積み重ね、この積み重ね状態で搬送することを特徴とする請求項３記載のパワーモジュール用絶縁基板の搬送方法。   4. The method for transporting an insulating substrate for a power module according to claim 3, wherein a plurality of sets of insulating substrates for the power module are stacked and transported in this stacked state.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002332472A (en) * 2001-03-07 2002-11-22 Sekisui Chem Co Ltd Adhesive, adhesive sheet and laminated body
JP2004107128A (en) * 2002-09-18 2004-04-08 Denki Kagaku Kogyo Kk Process for manufacturing joined product
JP2004356502A (en) * 2003-05-30 2004-12-16 Dowa Mining Co Ltd Metal-ceramic circuit board and its manufacturing method
JP2007273706A (en) * 2006-03-31 2007-10-18 Mitsubishi Materials Corp Manufacturing method of heat dissipation buffer plate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002332472A (en) * 2001-03-07 2002-11-22 Sekisui Chem Co Ltd Adhesive, adhesive sheet and laminated body
JP2004107128A (en) * 2002-09-18 2004-04-08 Denki Kagaku Kogyo Kk Process for manufacturing joined product
JP2004356502A (en) * 2003-05-30 2004-12-16 Dowa Mining Co Ltd Metal-ceramic circuit board and its manufacturing method
JP2007273706A (en) * 2006-03-31 2007-10-18 Mitsubishi Materials Corp Manufacturing method of heat dissipation buffer plate

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