JP2010002908A - Method of manufacturing black matrix substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a black matrix substrate having a resin type black matrix with high precision. <P>SOLUTION: A photosensitive resin layer including a negative photosensitive resin composition for a black matrix formed on a transparent substrate, is exposed via a photomask having a translucent part and a light shield part in a prescribed pattern and having a light shield part at an intersection of the translucent part which has an I-letter shape or a corridor-like shape and which is continuous with the light shield part. Thereafter, a black matrix pattern is formed by developing, and a black matrix substrate is obtained. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a black matrix substrate, and more particularly to a method for manufacturing a black matrix substrate having a resin type black matrix.

  In recent years, monochrome or color liquid crystal displays have attracted attention as flat displays. The liquid crystal display includes an active matrix system and a simple matrix system for controlling the three primary colors, and color filters are used in both systems. In a color liquid crystal display, the constituent pixel portions are set to three primary colors (R, G, B), and color transmission is performed by controlling transmission of light of the three primary colors by electrical switching of the liquid crystal.

  A color filter for a liquid crystal display is formed by forming each colored pattern and a transparent electrode film on a transparent substrate. In order to increase the coloring effect and display contrast, a light shielding film (black matrix) is formed at the boundary between the R, G, and B pixels of the colored pattern. In addition, since an active matrix liquid crystal display uses a thin film transistor (TFT) as a switching element, it is necessary to suppress a light leakage current. For this reason, a higher light shielding property is required for the black matrix.

  Conventionally, as a black matrix substrate for producing a color filter, a black matrix is formed by photoetching a chromium thin film on a transparent substrate, a black matrix is formed by dyeing a hydrophilic resin relief, and a black pigment. There are those in which a black matrix is formed using a photosensitive resin composition in which a black matrix is dispersed, those in which a black matrix is formed by electrodeposition of a black electrodeposition paint, and those in which a black matrix is formed by printing.

  In the case of forming a relief by using the photosensitive resin composition in which the above-described black pigment or the like is dispersed to form a black matrix, the photosensitive resin layer made of the negative photosensitive resin composition is subjected to proximity exposure through a photomask. A relief pattern is formed by exposure and then development. However, due to the light diffraction effect in proximity exposure, the photosensitive resin layer is exposed with a width wider than the pattern width of the light transmitting portion of the photomask, and this tendency is particularly remarkable at the location where the light transmitting portions of the photomask intersect. For this reason, the black matrix pattern developed and formed after exposure is thickened at the intersections, and there is a problem that a highly accurate black matrix pattern faithful to the pattern of the photomask cannot be obtained.

  In order to solve such problems, the distance between the photosensitive resin layer and the photomask in proximity exposure is set to be small, or the light used for exposure has a shorter wavelength, thereby diffracting light. It is conceivable to form a highly accurate black matrix by reducing the above. However, if the distance between the photosensitive resin layer and the photomask in proximity exposure is set to a small value, adhesion of the photosensitive resin composition to the photomask will occur if there is minute dust on the transparent substrate or photomask. When such a photomask is used, defects occur in the black matrix. Moreover, there is a problem that the range of selection of the photosensitive resin composition that can be used for forming the black matrix is narrowed by making the light used for exposure shorter in wavelength.

  The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a method of manufacturing a black matrix substrate provided with a resin type black matrix with high accuracy.

  In order to achieve such an object, the present invention applies a negative photosensitive resin composition for a black matrix on a transparent substrate to form a photosensitive resin layer, and the photosensitive resin layer is formed into a black matrix. In the method for manufacturing a black matrix substrate in which a black matrix pattern is formed by proximity exposure through a photomask for development and development, the photomask includes a light-transmitting portion and a light-shielding portion in a predetermined pattern. A configuration in which an I-shaped light-shielding portion that is located in the intersection and is continuous with the light-shielding portion is used.

  The present invention also provides a method for forming a photosensitive resin layer by applying a negative photosensitive resin composition for black matrix on a transparent substrate, and proxying the photosensitive resin layer through a photomask for black matrix. In the method of manufacturing a black matrix substrate in which a black matrix pattern is formed by exposing and developing with a mity, the photomask is provided with a light-transmitting portion and a light-shielding portion in a predetermined pattern, and is positioned so as to surround the intersection of the light-transmitting portions. And it was set as the structure which used the thing provided with the corridor-shaped light shielding part which followed the said light shielding part.

  As another aspect of the present invention, the width of the I-shaped light-shielding portion and the corridor-shaped light-shielding portion is in the range of 0.5 to 5.0 μm, and the area is 1 to 30 of the area where the light-transmitting portions intersect. % Of the composition.

  According to the present invention, a photosensitive resin layer made of a negative photosensitive resin composition for a black matrix formed on a transparent substrate is provided with a light-transmitting portion and a light-shielding portion in a predetermined pattern, and the light-transmitting portion intersects. A photomask provided with an I-shaped light-shielding part that is located within the area and continuous with the light-shielding part, or a corridor-shaped light-shielding that is located so as to surround the intersection of the light-transmitting parts and that is continuous with the light-shielding part By exposing and developing through a photomask having a portion, it is possible to effectively prevent the exposure area from being enlarged in a region corresponding to the intersection of the light-transmitting portions, and the exposure pattern of the photosensitive resin layer can be transmitted through the photomask. The pattern is very close to the pattern of the light part, and it is possible to manufacture a black matrix substrate with a highly accurate black matrix. In addition, the distance between the photosensitive resin layer and the photomask during exposure is small. Therefore, the photomask is prevented from being contaminated, the production yield of the black matrix substrate is greatly improved, and the light source used for exposure is not limited, so that it can be used for forming the black matrix. The effect of widening the range of selection of the photosensitive resin composition is exhibited.

It is process drawing for demonstrating one Embodiment of the manufacturing method of the black matrix board | substrate of this invention. It is a top view which shows an example of the photomask used in the manufacturing method of the black matrix substrate of this invention. It is the elements on larger scale which show the intersection of the black matrix formed by the manufacturing method of the black matrix board | substrate of this invention. It is a top view which shows an example of the photomask used in the manufacturing method of the conventional black matrix substrate. It is the elements on larger scale which show the intersection of the black matrix formed by the manufacturing method of the conventional black matrix board | substrate. It is a top view which shows the other example of the photomask used in the manufacturing method of the black matrix substrate of this invention. It is a top view which shows the other example of the photomask used in the manufacturing method of the black matrix substrate of this invention.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a process diagram for explaining an embodiment of a method for producing a black matrix substrate of the present invention.

  In FIG. 1, first, a negative photosensitive resin composition for black matrix is applied to a transparent substrate 2 to form a photosensitive resin layer 3 (FIG. 1A). The thickness of the photosensitive resin layer 3 can be set according to the thickness of the black matrix to be formed, and the coating method is a conventionally known coating means such as a roll coating method, a spin coating method, or a blade coating method. Can be used.

  Next, this photosensitive resin layer 3 is subjected to proximity exposure through a photomask 11 for black matrix (FIG. 1B). FIG. 2 is a plan view showing an example of the photomask 11 used in the present invention, and the photomask 11 shown in FIG. 1B has a cross-sectional shape taken along line AA in FIG.

  In FIG. 2, a photomask 11 is obtained by providing a light shielding layer with a predetermined pattern on a transparent substrate 12 to form a light shielding portion 13A (shown by oblique lines). The non-forming region of this light shielding portion 13A is black. A matrix-like light transmitting portion 14 corresponding to the matrix pattern is formed. A light shielding portion 13B (shown by diagonal lines) is formed in a cross shape at the intersection 14a of the light transmitting portion 14. Thereby, the light-shielding part 13B exists in the four corner | angular parts 14b of the intersection 14a of the translucent part 14 which is square shape.

  The line width of the light-shielding portion 13B needs to be a width that allows the photosensitive resin layer 3 to be exposed in the shape of the intersecting portion 14a of the light-transmitting portion 14 by the diffracting action of the irradiation light at the time of exposure. It can set in the range of -5.0 micrometers. Moreover, it is preferable to set the area of the light-shielding part 13B which occupies for the area of the intersection 14a of the translucent part 14 in the range of 1 to 30%.

  By exposing the photosensitive resin layer 3 through the photomask 11 as described above, the photosensitive resin layer 3 is exposed with a width slightly larger than the pattern width of the light transmitting portion 14 of the photomask 11 due to the diffraction of light. Then, the photosensitive resin layer 3 at a position corresponding to the intersecting portion 14a of the light transmitting portion 14 of the photomask 11 is exposed in a shape very close to the square shape of the intersecting portion 14a by the action of the light shielding portion 13B. Become.

  There is no restriction | limiting in particular in the transparent base material and light shielding layer material which comprise the above photomasks 11, The material conventionally used for the photomask can be used.

  In the proximity exposure of the photosensitive resin layer 3 through the photomask 11, the wavelength of the light source to be used is not particularly limited, and the light source can be appropriately set according to the photosensitive resin composition to be used. Further, the distance between the photosensitive resin layer 3 and the photomask 11 can be arbitrarily set within a range of 50 to 300 μm, and contamination of the photomask 11 with the photosensitive resin composition can be prevented.

  Next, by developing the photosensitive resin layer 3, the black matrix 4 is formed on the transparent substrate 2, and the black matrix substrate 1 is obtained (FIG. 1C).

  FIG. 3 is a partially enlarged view of the intersecting portion of the black matrix 4 of the black matrix substrate 1 manufactured as described above. In FIG. 3, the black matrix 4 (shown by oblique lines) has a width W slightly larger than the pattern w (shown by chain lines) of the light transmitting portion 14 of the photomask 11 described above. . Further, the intersection 4a of the black matrix 4 has a shape very close to the square shape of the intersection 14a (indicated by a two-dot chain line) of the light transmitting portion 14 of the photomask 11, and the four portions of the intersection 4a. The corner 4b has a sharp shape with very little curvature.

  On the other hand, a light shielding layer is formed in a predetermined pattern on a transparent substrate 102 as shown in FIG. 4 to form a light shielding portion 103, and a non-formation area of the light shielding portion 103 is formed in a matrix-like light transmission corresponding to a black matrix pattern. When proximity exposure as described above is performed using the conventional photomask 101 as the portion 104, the formed black matrix 114 has a shape as shown in FIG. That is, the black matrix 114 (shown by diagonal lines) has a width W slightly larger than the width w of the pattern (shown by chain lines) of the light transmitting portion 104 of the photomask 101. This is the same as the black matrix 4. However, the intersection 114a of the black matrix 114 has a larger area than the intersection 104a (indicated by a two-dot chain line) of the light transmitting portion 104 of the photomask 101 due to the diffraction effect of the irradiation light at the time of exposure. The shape is such that four corners 114b are curved. When the magnitude L of the curve at the corners of the black matrix is defined as shown in FIG. 5, in the black matrix substrate manufactured according to the present invention, the curves at the four corners 4b of the intersection 4a. However, in the conventional manufacturing method, the bending size L at the four corners 114b of the intersecting portion 114a exceeds 5 μm.

  The photomask used in the present invention is not limited to the photomask 11 described above. 6 and 7 are plan views showing other examples of the photomask that can be used in the present invention.

  The photomask 21 shown in FIG. 6 is obtained by providing a light shielding layer with a predetermined pattern on a transparent base material 22 to form a light shielding portion 23A (shown by hatching). Constitutes a matrix-like translucent portion 24 corresponding to a black matrix pattern. A light shielding portion 23B (shown by diagonal lines) is formed in an I shape within the intersection 24a (square shape surrounded by a chain line) of the light transmitting portion 24, and further, the intersection 24a (square shape). A light shielding portion 23B (shown by hatching) is also formed in an I shape on the two opposing sides. As a result, the light shielding portions 23B are formed in the vicinity of the four corner portions 24b of the intersecting portions 24a of the translucent portion 24 having a square shape.

  In addition, the photomask 31 shown in FIG. 7 is obtained by forming a light shielding portion 33A (shown by hatching) by providing a light shielding layer with a predetermined pattern on the transparent base material 32. The formation region constitutes a matrix-like light transmitting portion 34 corresponding to a black matrix pattern. A light-shielding portion 33B (shown by diagonal lines) is formed around an intersection 34a (a square shape surrounded by a solid line) of the translucent portion 34. As a result, the light shielding portions 33B are formed in the vicinity of the four corner portions 34b of the intersecting portion 34a of the transparent portion 34 having a square shape.

  Similar to the photomask 11, the line widths of the light-shielding portions 23B and 33B in the photomasks 21 and 31 described above are such that the photosensitive resin layer is crossed by the light-transmitting portion of the photomask by the diffracting action of the irradiation light during exposure. It is necessary to set the width to allow exposure with the shape of the part.

  The negative photosensitive resin composition for black matrix used in the method for producing a black matrix substrate of the present invention as described above is a publicly known material in which a photosensitive resin contains a dye, an inorganic pigment, an organic pigment or the like as a colorant. The various negative photosensitive resin compositions can be appropriately selected and used. The transparent substrate 2 may be a rigid material such as quartz glass, pyrex glass or synthetic quartz plate, or a flexible material such as a transparent resin film or an optical resin plate. . Among these, Corning 7059 glass is a material having a small coefficient of thermal expansion, excellent dimensional stability and workability in high-temperature heat treatment, and is a non-alkali glass that does not contain an alkali component in the glass. This is suitable for manufacturing a color filter for an LCD by an active matrix method using a matrix substrate.

Next, an Example is shown and this invention is demonstrated further in detail.
Example 1
First, a photomask A for black matrix having a shape as shown in FIG.

Photomask A for black matrix
-Transparent base material 2: thickness 5.0mm, external shape 300x430mm
-Line width of translucent part 14: 26 μm
-Pitch of the light transmitting portions 14: 110 μm
-The width of the light shielding part 13B: 1 μm
Next, a negative type photosensitive resin composition for black matrix (CK-S171 manufactured by Fuji Film Ohlin Co., Ltd.) was spin-coated on a glass substrate (Corning Co., Ltd. 7059 glass (thickness 0.7 mm)). And dried to form a photosensitive resin layer (thickness 1.5 μm). Next, proximity exposure was performed on the photosensitive resin layer through the above-described black matrix photomask A under the following conditions.

Exposure condition / light source: USH3502MA manufactured by USHIO INC.
(Wavelength 405nm)
・ Exposure: 300mJ
-Proximity distance of mask: 200 μm
Next, the photosensitive resin layer was developed, further washed and dried to form a matrix-like black matrix pattern to obtain a black matrix substrate A.

  This black matrix substrate A has a black matrix line width of 30 μm, a curve L at the intersection (defined as shown in FIG. 5) of 2 μm, and has a high accuracy very close to the pattern of the photomask A. It was a thing. Further, in the production of the black matrix substrate A, the photomask A was not contaminated.

  On the other hand, as a comparative example, a conventional black matrix photomask B having a shape as shown in FIG.

Photomask B for black matrix
Transparent substrate 102: thickness 5.0 mm, outer shape 330 × 430 mm
-Line width of translucent part 104: 28 μm
-Pitch of the light transmitting parts 104: 110 μm
Next, the photosensitive resin layer formed on the glass substrate in the same manner as described above was exposed under the same conditions through the above-described conventional black matrix photomask B.

  Next, the photosensitive resin layer was developed, further washed and dried to form a matrix-like black matrix pattern to obtain a black matrix substrate B.

  In this black matrix substrate B, the black matrix has a line width of 32 μm, but the curve size L (defined as shown in FIG. 5) at the intersecting portion is as large as 8 μm, and the intersecting portion with respect to the pattern of the photomask B The accuracy at was low. In the production of the black matrix substrate B, the photomask B was not contaminated.

  Further, a black matrix substrate C was obtained in the same manner as in the manufacture of the black matrix substrate B except that the photomask B was used and the proximity distance of the mask in proximity exposure was set to 75 μm.

  This black matrix substrate C has a black matrix line width of 30 μm and a curve size L (specified as shown in FIG. 5) at the intersection of 4 μm, which is very close to the pattern of the photomask B. Although it was accurate, the proximity of the mask was small, so that the photomask B was easily contaminated at the exposure stage.

  It is useful for manufacturing a high-definition black matrix substrate, and can be used for manufacturing various color filters having a black matrix.

DESCRIPTION OF SYMBOLS 1 ... Black matrix board | substrate 2 ... Transparent substrate 3 ... Photosensitive resin layer 4 ... Black matrix 11, 21, 31 ... Photomask 13 (13A, 13B), 23A, 23B, 33A, 33B ... Light-shielding part 14, 24, 34: Translucent part 14a, 24a, 34a ... Intersection of the translucent part 14b, 24b, 34b ... Corner of the intersection of the translucent part

Claims (3)

A negative photosensitive resin composition for a black matrix is applied on a transparent substrate to form a photosensitive resin layer, and the photosensitive resin layer is subjected to proximity exposure through a photomask for black matrix and developed. In the black matrix substrate manufacturing method for forming a black matrix pattern by:
The photomask has a light-transmitting part and a light-shielding part in a predetermined pattern, and uses a photomask having an I-shaped light-shielding part that is located in the intersection of the light-transmitting parts and is continuous with the light-shielding part. A method for manufacturing a black matrix substrate. A negative photosensitive resin composition for a black matrix is applied on a transparent substrate to form a photosensitive resin layer, and the photosensitive resin layer is subjected to proximity exposure through a photomask for black matrix and developed. In the black matrix substrate manufacturing method for forming a black matrix pattern by:
A photomask having a light-transmitting portion and a light-shielding portion in a predetermined pattern, and having a corridor-shaped light-shielding portion that is located so as to surround an intersection of the light-transmitting portions and that is continuous with the light-shielding portion is used. A method for manufacturing a black matrix substrate. The width of the I-shaped light-shielding part and the corridor-shaped light-shielding part is in the range of 0.5 to 5.0 μm, and the area is in the range of 1 to 30% of the area of the intersection of the light-transmitting parts. A method for producing a black matrix substrate according to claim 1 or 2.

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