JP2010002332A - Thermocouple sensor substrate and its method of manufacturing - Google Patents

Thermocouple sensor substrate and its method of manufacturing Download PDF

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JP2010002332A
JP2010002332A JP2008162135A JP2008162135A JP2010002332A JP 2010002332 A JP2010002332 A JP 2010002332A JP 2008162135 A JP2008162135 A JP 2008162135A JP 2008162135 A JP2008162135 A JP 2008162135A JP 2010002332 A JP2010002332 A JP 2010002332A
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thin film
metal
layer
insulating
thermocouple sensor
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JP4934867B2 (en
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Keiji Aeba
恵司 饗庭
Tsutomu Nitta
勉 新田
Toshiyuki Shimizu
俊行 清水
Tadamasa Takahashi
忠正 高橋
Kenji Nakamura
賢治 中村
Hideyuki Fukuda
秀幸 福田
Yoshinobu Abe
可伸 安部
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ARM DENSHI KK
Advanced Systems Japan Inc
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ARM DENSHI KK
Advanced Systems Japan Inc
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a thermocouple sensor substrate capable of constituting a thermocouple sensor substrate by an easy method without requiring a complicated constitution, and to provide its method of manufacturing. <P>SOLUTION: Wiring patterns are formed on both sides of an insulating layer. A copper wiring pattern 100 is formed on the surface side, and a nickel wiring pattern 101 is formed on the back surface side. One-side ends of these wiring patterns are provided with sensors 102 contacting with liquid and gas to be measured for measuring their temperatures, and edges of other ends are provided with connectors 103 connected to a measuring apparatus. The sensor 102 constitutes a thermocouple by the junction of the different types of metals of the copper wiring pattern 100 and the nickel wiring pattern 101 and measures a temperature by the use of a phenomenon that a thermoelectromotive force is generated at the junction. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、温度センサに用いられる熱電対センサ基板及びその製造方法に関し、特に、製造が容易な熱電対センサ基板及びその製造方法に関する。   The present invention relates to a thermocouple sensor substrate used for a temperature sensor and a method for manufacturing the same, and more particularly to a thermocouple sensor substrate that is easy to manufacture and a method for manufacturing the same.

温度センサとしては、白金測温抵抗体、サーミスタ、熱電対等が知られている。その中でも、熱電対は、測定精度が高く、また比較的安価であるという利点があり、幅広く利用されている。熱電対は、二種類の金属材料を接合させることにより閉回路を形成し、その接合点を異なる温度にさらすと熱起電力が生じて電流が流れる現象(ゼーベック効果)を利用するものである。   Known temperature sensors include platinum resistance thermometers, thermistors, thermocouples, and the like. Among them, thermocouples are widely used because they have advantages of high measurement accuracy and relatively low cost. The thermocouple uses a phenomenon (Seebeck effect) in which a closed circuit is formed by joining two kinds of metal materials, and when the junction is exposed to different temperatures, a thermoelectromotive force is generated and current flows.

この熱電対は、熱電対センサ素子として線状の導電体を用いたものが一般的であったが、近年、薄い金属箔を重ね合わせて薄膜化を図った形状の薄型熱電対が種々知られている。この薄型熱電対は、熱容量が小さいために測定対象の温度分布を大きく乱すことなく測定することができ、また時間応答性が優れている等の利点を有している。   These thermocouples generally used linear conductors as thermocouple sensor elements, but in recent years, various thin thermocouples having a shape in which thin metal foils are stacked to form a thin film are known. ing. Since this thin thermocouple has a small heat capacity, it can measure without greatly disturbing the temperature distribution of the object to be measured, and has advantages such as excellent time response.

そして、この熱電対センサ素子は、絶縁基板としてポリイミド等のプラスチック、ガラス/エポキシなどの複合材、各種セラミックスが用いられ、基板上に微細プリント配線技術により、例えば、0.3mm間隔で多数の熱電対を配列形成することができる。   In this thermocouple sensor element, a plastic such as polyimide, a composite material such as glass / epoxy, and various ceramics are used as an insulating substrate, and a large number of thermoelectric elements are formed on the substrate at intervals of, for example, 0.3 mm using a fine printed wiring technique. Pairs can be sequenced.

これにより、射出成形用ノズル内の流動樹脂内部あるいは金型内流動樹脂内部のように、樹脂内のわずかな厚さ範囲内で大きな温度変化が存在するような温度分布を高い精度で計測することができる。   This makes it possible to measure with high accuracy the temperature distribution in which a large temperature change exists within a small thickness range within the resin, such as inside the fluid resin in the injection molding nozzle or inside the mold. Can do.

このような、熱電対センサ素子を利用した温度センサとして特許文献1に挙げるようなものが提案されている。
特許文献1で提案されている発明によれば、細長い板状の絶縁基板の端部に熱電対接合部が配列形成され、その表面に熱電対を構成する異種導体が印刷配線された熱電対センサ素子と、この熱電対センサ素子を保持する保持体とから構成されている。
As such a temperature sensor using a thermocouple sensor element, a sensor as listed in Patent Document 1 has been proposed.
According to the invention proposed in Patent Document 1, a thermocouple sensor in which thermocouple junctions are arrayed at the end of an elongated plate-like insulating substrate, and different conductors constituting the thermocouple are printed on the surface thereof. It is comprised from the element and the holding body holding this thermocouple sensor element.

この熱電対センサ素子は、保持体に設けられたスリットに挿入することにより、温度センサとして一体化するものであり、測定対象機器への装着が容易であることを特徴としたものである。
特開2002−131144号公報
This thermocouple sensor element is integrated as a temperature sensor by being inserted into a slit provided in a holding body, and is characterized in that it can be easily attached to a measurement target device.
JP 2002-131144 A

特許文献1で提案されている温度センサに用いられる熱電対センサ素子は、セラミック基板の表面にNi配線が印刷配線され、裏面にCu配線が印刷配線されており、端部に設けられたスルーホール内でCu−Ni間の接合がされており、これらの配線が電気的に接続されている。このスルーホールの形成は、多くの工程や精密性を必要とし、構造が複雑であるため、熟練の技術が求められる。このため、形成の時間とコストがかかることによりこれらが製造上の弊害となる問題が発生する。   A thermocouple sensor element used in a temperature sensor proposed in Patent Document 1 has a Ni wiring printed on the surface of a ceramic substrate, a Cu wiring printed on the back, and a through hole provided at an end. Inside, Cu-Ni joining is carried out, and these wirings are electrically connected. The formation of this through hole requires many steps and precision, and since the structure is complicated, skilled techniques are required. For this reason, since the time and cost of formation are increased, there arises a problem that these are harmful to the production.

本発明は係る問題に鑑みてなされたものであり、複雑な構成を必要とせず、容易な方法によって熱電対センサ基板を構成することができる熱電対センサ基板および、その製造方法を提供することを目的とする。   The present invention has been made in view of the above problems, and provides a thermocouple sensor substrate that can form a thermocouple sensor substrate by an easy method without requiring a complicated configuration, and a method for manufacturing the same. Objective.

本発明は、上記目的を達成するため、絶縁基板と、前記絶縁基板の上層に積層される第1の金属の薄膜と、前記第1の金属の薄膜とは異種の金属であって前記絶縁基板の下層に積層される第2の金属の薄膜と、からなり、前記上層から前記下層にかけて、前記第1の金属の薄膜のエッチング処理、前記絶縁部の除去処理および該除去処理が行なわれた部位への前記第1の金属の薄膜と同種の金属によるめっき処理を行なうことにより、前記第1の金属の薄膜と前記第2の金属の薄膜を電気的に接続することを特徴とする熱電対センサ基板を提供するものである。   In order to achieve the above object, according to the present invention, an insulating substrate, a first metal thin film stacked on an upper layer of the insulating substrate, and the first metal thin film are different metals, and the insulating substrate. A second metal thin film laminated on the lower layer of the first metal thin film, and from the upper layer to the lower layer, the etching process of the first metal thin film, the removal process of the insulating portion, and the site where the removal process was performed A thermocouple sensor characterized in that the first metal thin film and the second metal thin film are electrically connected to each other by performing a plating treatment with the same kind of metal as the first metal thin film. A substrate is provided.

以上の構成において、前記第1の金属の薄膜側の最外層および前記第2の金属の薄膜側の最外層にはそれぞれ絶縁層が形成されていることが望ましい。   In the above configuration, it is desirable that an insulating layer be formed on each of the outermost layer on the thin film side of the first metal and the outermost layer on the thin film side of the second metal.

また、前記第2の金属の薄膜側の最外層の前記絶縁層は、前記第1の金属の薄膜と第2の金属の薄膜との接続位置のみ前記第2の金属の薄膜が露出されていることが望ましい。   In addition, the outermost insulating layer on the thin film side of the second metal has the second metal thin film exposed only at the connection position between the first metal thin film and the second metal thin film. It is desirable.

また、前記第1の金属の薄膜は銅であり、第2の金属の薄膜はニッケルであることが望ましい。   Preferably, the first metal thin film is copper, and the second metal thin film is nickel.

また、本発明は、上記目的を達成するため、絶縁基板の上層および下層に異種金属の薄膜をそれぞれ積層し、前記上層の薄膜の一部を剥離し、前記剥離して露出した箇所の前記絶縁部を除去し、前記除去して露出した位置の前記下層の薄膜に対して前記上層の薄膜側から前記上層の薄膜と同種の金属でめっき処理し、前記めっき処理により前記上層と前記下層の異種金属を電気的に接続させることを特徴とする熱電対センサ基板の製造方法を提供するものである。   Further, in order to achieve the above object, the present invention provides a method of laminating a thin film of a dissimilar metal on an upper layer and a lower layer of an insulating substrate, peeling off a part of the thin film on the upper layer, and removing the exposed portion of the insulating layer. And removing the exposed portion by plating with the same kind of metal as the upper thin film from the thin film side of the upper layer, and dissimilarity between the upper layer and the lower layer by the plating process. The present invention provides a method for manufacturing a thermocouple sensor substrate, characterized by electrically connecting metals.

この場合、前記下層の薄膜に更に絶縁層を積層し、前記電気的接続が行なわれる位置の前記下層の薄膜を露出させることが望ましい。   In this case, it is preferable that an insulating layer is further laminated on the lower thin film to expose the lower thin film at a position where the electrical connection is performed.

本発明によれば、絶縁基板の両面に積層された一対の異種金属製の薄膜のうち、一方の薄膜の一部を剥離して露出した絶縁部を除去して、露出させた他方の薄膜へめっき処理を施すことにより、異種金属の接合を形成し、熱電対を構成することができる。このため、複雑な工程を必要とすることなく容易に熱電対を形成することが可能となる。   According to the present invention, among the pair of thin films made of different metals laminated on both surfaces of the insulating substrate, a part of one thin film is peeled off to remove the exposed insulating portion and to the other exposed thin film. By performing the plating treatment, it is possible to form a thermocouple by forming a bond of dissimilar metals. For this reason, it becomes possible to form a thermocouple easily, without requiring a complicated process.

次に、図面を参照して、本発明の実施形態について説明する。
図1は、熱電対センサ基板の構成を示した平面図であり、図1は(a)は、熱電対センサ基板の表面側を示した図であり、図1(b)は、熱電対センサ基板の裏面側を示した図である。
Next, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a plan view showing a configuration of a thermocouple sensor substrate, FIG. 1 (a) is a diagram showing a surface side of the thermocouple sensor substrate, and FIG. 1 (b) is a thermocouple sensor. It is the figure which showed the back surface side of the board | substrate.

図に示すように、熱電対センサ基板10上には、配線パターンが形成されており、表面側に銅配線パターン100が形成され(図1(a))、裏面側にニッケル配線パターン101が形成されている(図1(b))。これらの配線パターンの一端には、測定対象となる流体や気体に接触させてそれらの温度を測定するためのセンサ部102が設けられ、他端縁部には測定機器に接続するためのコネクタ部103が設けられている。   As shown in the figure, a wiring pattern is formed on the thermocouple sensor substrate 10, a copper wiring pattern 100 is formed on the front surface side (FIG. 1A), and a nickel wiring pattern 101 is formed on the back surface side. (FIG. 1B). One end of these wiring patterns is provided with a sensor portion 102 for contacting the fluid or gas to be measured and measuring the temperature thereof, and the other end edge portion is a connector portion for connecting to a measuring instrument. 103 is provided.

センサ部102では、銅配線パターン100とニッケル配線パターン101とが接合することにより熱電対を構成しており、この接合点で熱起電力が生じる現象を利用して温度を測定する。   In the sensor unit 102, a thermocouple is configured by bonding the copper wiring pattern 100 and the nickel wiring pattern 101, and the temperature is measured using a phenomenon in which a thermoelectromotive force is generated at the bonding point.

図2は、図1(a)に示すA−A断面を示した図である。
図2に示すように、熱電対センサ基板10は、複数の部材が積層することで構成されている。最下層から順に、絶縁層200と、ニッケル箔面パターン層201と、絶縁基板202と、銅箔層203と、銅めっき層204と、絶縁層205とが積層されている。
FIG. 2 is a cross-sectional view taken along the line AA shown in FIG.
As shown in FIG. 2, the thermocouple sensor substrate 10 is configured by laminating a plurality of members. The insulating layer 200, the nickel foil surface pattern layer 201, the insulating substrate 202, the copper foil layer 203, the copper plating layer 204, and the insulating layer 205 are laminated in order from the lowest layer.

最下層の絶縁層200と最上層の絶縁層205は、測定機器に接続するためのコネクタ部103には積層されておらず、センサ部102側の一端からコネクタ部103の手前付近にのみ積層されている。   The lowermost insulating layer 200 and the uppermost insulating layer 205 are not stacked on the connector portion 103 for connecting to the measuring device, but are stacked only from the one end on the sensor portion 102 side in front of the connector portion 103. ing.

センサ部102では、ニッケル箔面パターン層201と銅めっき層204とが接合点を形成している。即ち、ニッケルと銅とによる異種金属の接合点の形成により熱電対が構成されている。そして、センサ部102の下部の絶縁層200にはニッケル箔面パターン層201が露出した空隙104が形成されている。   In the sensor unit 102, the nickel foil surface pattern layer 201 and the copper plating layer 204 form a junction. That is, a thermocouple is formed by forming a junction point of dissimilar metals with nickel and copper. A gap 104 in which the nickel foil surface pattern layer 201 is exposed is formed in the insulating layer 200 below the sensor unit 102.

コネクタ部103は、ニッケル箔面パターン層201および銅めっき層204が露出した形状となっており、測定機器と電気的な接続を可能としている。   The connector portion 103 has a shape in which the nickel foil surface pattern layer 201 and the copper plating layer 204 are exposed, and can be electrically connected to a measuring instrument.

次に、図3〜図5を参照して、熱電対センサ基板10の製造方法について説明する。
図3(a)〜(b)は、異種金属貼り積層板の形成工程を示した図であり、図3(c)は金属箔のエッチングを示し、図3(d)は絶縁層のレーザ除去を示す。図4(a)〜(b)は、銅めっき工程を示した図であり、図4(c)は、配線パターンの形成工程を示した図であり、図5(a)〜(d)は、保護層の形成工程を示した図である。
Next, a manufacturing method of the thermocouple sensor substrate 10 will be described with reference to FIGS.
FIGS. 3A to 3B are views showing a process for forming a laminated sheet of different kinds of metal, FIG. 3C shows the etching of the metal foil, and FIG. 3D shows the laser removal of the insulating layer. Indicates. 4 (a) to 4 (b) are diagrams illustrating a copper plating process, FIG. 4 (c) is a diagram illustrating a wiring pattern forming process, and FIGS. 5 (a) to 5 (d) are diagrams. It is the figure which showed the formation process of a protective layer.

<異種金属貼り積層板の形成工程>
まず、図3(a)に示すように、絶縁基板202の表面に銅箔層203を積層し、裏面にニッケル箔201を積層する。積層した部材をプレス積層法にて加熱加圧を施し、積層板を形成する。
<Formation process of dissimilar metal laminated laminate>
First, as shown in FIG. 3A, a copper foil layer 203 is laminated on the surface of the insulating substrate 202, and a nickel foil 201 is laminated on the back surface. The laminated member is heated and pressed by a press lamination method to form a laminated plate.

<エッチング工程>
次に、図3(b)に示すように、前述したセンサ部102を形成するために、銅箔層203の一部をエッチング処理して絶縁基板202を露出させる。そして、図3(c)に示すように、銅箔層203から露出している絶縁基板202をレーザ装置(図示せず)により除去することで、ニッケル箔面パターン層201が露出した穴206を形成する。
<Etching process>
Next, as shown in FIG. 3B, a part of the copper foil layer 203 is etched to expose the insulating substrate 202 in order to form the sensor unit 102 described above. Then, as shown in FIG. 3C, the insulating substrate 202 exposed from the copper foil layer 203 is removed by a laser device (not shown), so that the hole 206 where the nickel foil surface pattern layer 201 is exposed is formed. Form.

<銅めっき工程>
次に、図4(a)〜図4(c)に示すように銅箔層203の上面及び穴206に銅めっきを行う。まず、図4(a)では、ニッケル箔面パターン層201の表面に銅めっきが付着することを防止するためにテープ(日東電工株式会社:エレップマスキング N−380)207を貼着する。このテープ207は、金属めっきを行う際にマスキング用として使用されるものであって、ポリ塩化ビニルフィルムを支持体とした表面保護材である。
<Copper plating process>
Next, as shown in FIGS. 4A to 4C, copper plating is performed on the upper surface of the copper foil layer 203 and the hole 206. First, in FIG. 4A, a tape (Nitto Denko Corporation: ELEP Masking N-380) 207 is attached to prevent the copper plating from adhering to the surface of the nickel foil surface pattern layer 201. This tape 207 is used for masking when performing metal plating, and is a surface protective material using a polyvinyl chloride film as a support.

次に、図4(b)に示すように無電解銅めっき処理及び電気銅めっき処理を行うことで、銅箔層203と穴206に銅めっきを施し、銅めっき層204を形成する。
まず、無電解銅めっき処理では、上記工程を経て製造された基板をめっき溶液が入った無電解銅めっきの浴に浸漬させ、銅箔層203と穴206に銅を析出させる。次に、満足な銅めっきの厚さを得るために、電解銅めっき処理を行う。電解銅めっき処理では、めっき溶液とめっき溶液に浸漬させた無電解銅めっき処理後の基板に電流を流すことで基板上に銅を析出させる。これにより、銅箔層203および穴206に十分な厚さの銅めっき層204を積層させることができる。そして、銅めっき工程が終了するとテープ207を剥離する(図4(c))。
この銅めっき工程によって、ニッケル箔面パターン層201と銅めっき層204とで接合点を形成することができ、いわゆる異種金属の接合による熱電対を構成することができる。
Next, as shown in FIG. 4B, copper plating is performed on the copper foil layer 203 and the hole 206 by performing an electroless copper plating process and an electrolytic copper plating process, thereby forming a copper plating layer 204.
First, in the electroless copper plating treatment, the substrate manufactured through the above steps is immersed in an electroless copper plating bath containing a plating solution, and copper is deposited in the copper foil layer 203 and the hole 206. Next, in order to obtain a satisfactory copper plating thickness, an electrolytic copper plating process is performed. In the electrolytic copper plating treatment, copper is deposited on the substrate by passing a current through the plating solution and the substrate after the electroless copper plating treatment immersed in the plating solution. Thereby, the copper plating layer 204 having a sufficient thickness can be laminated in the copper foil layer 203 and the hole 206. Then, when the copper plating step is completed, the tape 207 is peeled off (FIG. 4C).
By this copper plating step, a junction point can be formed by the nickel foil surface pattern layer 201 and the copper plating layer 204, and a thermocouple can be formed by so-called dissimilar metal bonding.

<配線パターン形成工程>
次に、図4(c)に示す積層された基板に銅配線パターン100とニッケル配線パターン101を形成する。配線パターンの形成は、公知の技術であるフォトレジストを利用して、ニッケル箔面パターン層201と銅めっき層204とに露光処理、現像処理、エッチング処理を行い、配線パターンを形成する。
<Wiring pattern formation process>
Next, a copper wiring pattern 100 and a nickel wiring pattern 101 are formed on the stacked substrates shown in FIG. The wiring pattern is formed by performing exposure processing, development processing, and etching processing on the nickel foil surface pattern layer 201 and the copper plating layer 204 using a known technique of photoresist.

<保護層の形成工程>
次に、ニッケル箔面パターン層201の下層と銅めっき層204の上層に絶縁層200,205を形成する。この絶縁層200,205は、ニッケル箔面パターン層201と銅めっき層204とを外部から電気的に絶縁することができると共に、防塵や防湿、金属面の酸化防止をいった役割を果たすことができる。
<Protective layer formation process>
Next, insulating layers 200 and 205 are formed in the lower layer of the nickel foil surface pattern layer 201 and the upper layer of the copper plating layer 204. The insulating layers 200 and 205 can electrically insulate the nickel foil surface pattern layer 201 and the copper plating layer 204 from the outside, and can also play a role of preventing dust and moisture and preventing oxidation of the metal surface. it can.

まず、絶縁層205の形成について説明すると、銅めっき層204の上層全面に紫外線硬化樹脂である絶縁層膜を塗布し、紫外線露光によって絶縁層膜の有無の選択形成を行う(図5(a))。即ち、銅めっき層204のコネクタ部103となる箇所については、銅めっき層204を露出させる必要がある。そこで、紫外線露光する際に、コネクタ部103となる箇所への紫外線の露光を遮蔽する。紫外線が露光された箇所は絶縁層膜が硬化し、露光が遮蔽された箇所は硬化せず、現像処理によって可溶して除去される。これにより、コネクタ部103では、銅めっき層204が露出した絶縁層205を形成することができる(図5(b))。   First, the formation of the insulating layer 205 will be described. An insulating layer film that is an ultraviolet curable resin is applied to the entire upper surface of the copper plating layer 204, and the presence or absence of the insulating layer film is selectively formed by ultraviolet exposure (FIG. 5A). ). That is, it is necessary to expose the copper plating layer 204 at a portion that becomes the connector portion 103 of the copper plating layer 204. Therefore, when ultraviolet light exposure is performed, ultraviolet light exposure to a portion that becomes the connector portion 103 is shielded. The insulating layer film is cured at the portion exposed to the ultraviolet rays, and the portion where the exposure is shielded is not cured, but is dissolved and removed by the development process. Thereby, in the connector part 103, the insulating layer 205 which exposed the copper plating layer 204 can be formed (FIG.5 (b)).

次に、ニッケル箔面パターン層201の下層に絶縁層200を形成する。まず、ニッケル箔面パターン層201の全面に上記と同様の紫外線硬化樹脂である絶縁層膜を塗布し(図5(c))、紫外線露光による絶縁層膜の有無の選択形成を行う(図5(d))。即ち、センサ部102の下部およびコネクタ部103においてニッケル箔面パターン層201を露出させる必要があるため、センサ部102の下部およびコネクタ部103となる箇所には紫外線露光を遮蔽させる。これにより、紫外線が露光された箇所は絶縁層膜が硬化し、紫外線が遮蔽された部分は硬化せず、現像処理によって可溶して除去される。これにより、センサ部102の下部に空隙104が形成され、コネクタ部103では、ニッケル箔面パターン層201が露出された絶縁層200を形成することができる。   Next, the insulating layer 200 is formed under the nickel foil surface pattern layer 201. First, an insulating layer film, which is an ultraviolet curable resin similar to the above, is applied to the entire surface of the nickel foil surface pattern layer 201 (FIG. 5C), and the presence or absence of the insulating layer film is selectively formed by ultraviolet exposure (FIG. 5). (D)). That is, since it is necessary to expose the nickel foil surface pattern layer 201 at the lower part of the sensor part 102 and the connector part 103, ultraviolet light exposure is shielded at the lower part of the sensor part 102 and the part that becomes the connector part 103. As a result, the insulating layer film is cured at the portion exposed to the ultraviolet rays, and the portion shielded from the ultraviolet rays is not cured, but is soluble and removed by the development process. As a result, the gap 104 is formed in the lower part of the sensor unit 102, and the connector layer 103 can form the insulating layer 200 from which the nickel foil surface pattern layer 201 is exposed.

このように本発明の実施形態によれば、一対の異種金属が両面に積層された基板の一部において、一方の金属面から他方の金属面を露出させ、そこにめっき処理を行うことにより、異種金属の接合を形成することができるために、容易に熱電対を構成することができる。
また、従来のプリント配線技術の製造ラインで製造することができるため、熱電対センサ基板の専用の製造ラインを必要とすることなく、低コストでの製造が実現可能となる。
As described above, according to the embodiment of the present invention, in a part of a substrate in which a pair of different kinds of metals are laminated on both sides, by exposing the other metal surface from one metal surface and performing a plating process there, Since a dissimilar metal junction can be formed, a thermocouple can be easily configured.
Moreover, since it can manufacture with the manufacturing line of the conventional printed wiring technique, manufacture at low cost is realizable, without requiring the manufacturing line for exclusive use of a thermocouple sensor board | substrate.

本発明の実施形態に係る熱電対センサ基板の構成を示した平面図である。It is the top view which showed the structure of the thermocouple sensor board | substrate which concerns on embodiment of this invention. 図1に示すA−A断面を示した断面図である。It is sectional drawing which showed the AA cross section shown in FIG. 図3(a)〜(d)は異種金属貼り積層板の形成工程および銅めっき工程を示した図である。FIGS. 3A to 3D are views showing a formation process of a dissimilar metal-clad laminate and a copper plating process. 図4(a)〜(c)は銅めっき工程および配線パターン形成工程を示した図である。4A to 4C are views showing a copper plating process and a wiring pattern forming process. 図5(a)〜(d)は保護層の形成工程を示した図である。FIGS. 5A to 5D are views showing a protective layer forming process.

符号の説明Explanation of symbols

10 熱電対センサ基板
100 銅配線パターン
101 ニッケル配線パターン
102 センサ部
103 コネクタ部
104 空隙
200 絶縁層
201 ニッケル箔面パターン層
202 絶縁基板
203 銅箔層
204 銅めっき層
205 絶縁層
206 穴
207 テープ
DESCRIPTION OF SYMBOLS 10 Thermocouple sensor board | substrate 100 Copper wiring pattern 101 Nickel wiring pattern 102 Sensor part 103 Connector part 104 Air gap 200 Insulating layer 201 Nickel foil surface pattern layer 202 Insulating substrate 203 Copper foil layer 204 Copper plating layer 205 Insulating layer 206 Hole 207 Tape

Claims (6)

絶縁基板と、
前記絶縁基板の上層に積層される第1の金属の薄膜と、
前記第1の金属の薄膜とは異種の金属であって前記絶縁基板の下層に積層される第2の金属の薄膜と、
からなり、
前記上層から前記下層にかけて、前記第1の金属の薄膜のエッチング処理、前記絶縁部の除去処理および該除去処理が行なわれた部位への前記第1の金属の薄膜と同種の金属によるめっき処理を行なうことにより、前記第1の金属の薄膜と前記第2の金属の薄膜を電気的に接続することを特徴とする熱電対センサ基板。
An insulating substrate;
A first metal thin film laminated on an upper layer of the insulating substrate;
The first metal thin film is a different metal and is laminated on the lower layer of the insulating substrate;
Consists of
From the upper layer to the lower layer, an etching process of the first metal thin film, a removal process of the insulating portion, and a plating process with the same kind of metal as the first metal thin film on the portion where the removal process has been performed A thermocouple sensor substrate comprising: electrically connecting the first metal thin film and the second metal thin film.
前記第1の金属の薄膜側の最外層および前記第2の金属の薄膜側の最外層にはそれぞれ絶縁層が形成されていることを特徴とする請求項1に記載の熱電対センサ基板。   2. The thermocouple sensor substrate according to claim 1, wherein an insulating layer is formed on each of the outermost layer on the thin film side of the first metal and the outermost layer on the thin film side of the second metal. 前記第2の金属の薄膜側の最外層の前記絶縁層は、前記第1の金属の薄膜と第2の金属の薄膜との接続位置のみ前記第2の金属の薄膜が露出されていることを特徴とする請求項1または2に記載の熱電対センサ基板。   In the outermost insulating layer on the thin film side of the second metal, the thin film of the second metal is exposed only at a connection position between the thin film of the first metal and the thin film of the second metal. The thermocouple sensor substrate according to claim 1 or 2, characterized in that: 前記第1の金属の薄膜は銅であり、第2の金属の薄膜はニッケルであることを特徴とする請求項1から3のいずれか1項に記載の熱電対センサ基板。   4. The thermocouple sensor substrate according to claim 1, wherein the first metal thin film is copper, and the second metal thin film is nickel. 5. 絶縁基板の上層および下層に異種金属の薄膜をそれぞれ積層し、
前記上層の薄膜の一部を剥離し、
前記剥離して露出した箇所の前記絶縁部を除去し、
前記除去して露出した位置の前記下層の薄膜に対して前記上層の薄膜側から前記上層の薄膜と同種の金属でめっき処理し、
前記めっき処理により前記上層と前記下層の異種金属を電気的に接続させることを特徴とする熱電対センサ基板の製造方法。
Laminate dissimilar metal thin films on the upper and lower layers of the insulating substrate,
Peeling off a part of the upper thin film,
Removing the insulating part of the exposed part by peeling;
Plating with the same kind of metal as the upper thin film from the upper thin film side with respect to the lower thin film at the removed and exposed position,
A method of manufacturing a thermocouple sensor substrate, wherein the upper layer and the lower layer of different metals are electrically connected by the plating process.
前記下層の薄膜に更に絶縁層を積層し、前記電気的接続が行なわれる位置の前記下層の薄膜を露出させることを特徴とする請求項5に記載の熱電対センサ基板の製造方法。   6. The method of manufacturing a thermocouple sensor substrate according to claim 5, wherein an insulating layer is further laminated on the lower thin film to expose the lower thin film at a position where the electrical connection is performed.
JP2008162135A 2008-06-20 2008-06-20 Thermocouple sensor substrate and manufacturing method thereof Expired - Fee Related JP4934867B2 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014175575A (en) * 2013-03-12 2014-09-22 Ricoh Co Ltd Sensor element and method of manufacturing sensor element
WO2016084342A1 (en) * 2014-11-28 2016-06-02 タツタ電線株式会社 Conductive paste and thermocouple using same

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JPS5073475A (en) * 1973-10-25 1975-06-17
JPS5367487A (en) * 1976-11-29 1978-06-15 Toshiba Corp Crystal surface detector
JPS64778A (en) * 1987-05-22 1989-01-05 Hidetoshi Yokoi Thermocouple temperature sensor
JP2002131144A (en) * 2000-10-19 2002-05-09 Foundation For The Promotion Of Industrial Science Probe type thermo couple temperature sensor

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JPS5073475A (en) * 1973-10-25 1975-06-17
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JPS64778A (en) * 1987-05-22 1989-01-05 Hidetoshi Yokoi Thermocouple temperature sensor
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014175575A (en) * 2013-03-12 2014-09-22 Ricoh Co Ltd Sensor element and method of manufacturing sensor element
US9638585B2 (en) 2013-03-12 2017-05-02 Ricoh Company, Ltd. Sensor, method of manufacturing the sensor, and image forming apparatus including the sensor
WO2016084342A1 (en) * 2014-11-28 2016-06-02 タツタ電線株式会社 Conductive paste and thermocouple using same

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