JP2009540617A5 - - Google Patents

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Publication number
JP2009540617A5
JP2009540617A5 JP2009515585A JP2009515585A JP2009540617A5 JP 2009540617 A5 JP2009540617 A5 JP 2009540617A5 JP 2009515585 A JP2009515585 A JP 2009515585A JP 2009515585 A JP2009515585 A JP 2009515585A JP 2009540617 A5 JP2009540617 A5 JP 2009540617A5
Authority
JP
Japan
Prior art keywords
wavelength
light
emitting
led
potential well
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009515585A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009540617A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2007/070853 external-priority patent/WO2007146863A1/en
Publication of JP2009540617A publication Critical patent/JP2009540617A/ja
Publication of JP2009540617A5 publication Critical patent/JP2009540617A5/ja
Pending legal-status Critical Current

Links

JP2009515585A 2006-06-12 2007-06-11 再発光半導体構造体及び反射体を有するｌｅｄ装置 Pending JP2009540617A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US80453806P 2006-06-12 2006-06-12
PCT/US2007/070853 WO2007146863A1 (en) 2006-06-12 2007-06-11 Led device with re-emitting semiconductor construction and reflector

Publications (2)

Publication Number Publication Date
JP2009540617A JP2009540617A (ja) 2009-11-19
JP2009540617A5 true JP2009540617A5 (ko) 2010-08-12

Family

ID=38832113

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009515585A Pending JP2009540617A (ja) 2006-06-12 2007-06-11 再発光半導体構造体及び反射体を有するｌｅｄ装置

Country Status (6)

Country Link
EP (1) EP2033237A4 (ko)
JP (1) JP2009540617A (ko)
KR (1) KR20090018627A (ko)
CN (1) CN101467273B (ko)
TW (1) TW200810156A (ko)
WO (1) WO2007146863A1 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008012316B4 (de) * 2007-09-28 2023-02-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlichtquelle mit einer Primärstrahlungsquelle und einem Lumineszenzkonversionselement
EP2769703B1 (en) 2009-04-30 2022-04-06 Zeltiq Aesthetics, Inc. Device for removing heat from subcutaneous lipid-rich cells
DE102013212372A1 (de) * 2013-06-27 2014-12-31 Robert Bosch Gmbh Optische Baueinheit
CN105865668B (zh) * 2015-01-20 2019-12-10 北京纳米能源与系统研究所 压力传感成像阵列、设备及其制作方法
JP7242886B2 (ja) * 2019-10-02 2023-03-20 富士フイルム株式会社 バックライトおよび液晶表示装置
JP2024044397A (ja) * 2022-09-21 2024-04-02 株式会社トプコン 植物センサ
JP2024044396A (ja) * 2022-09-21 2024-04-02 株式会社トプコン 植物センサ

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3559446B2 (ja) * 1998-03-23 2004-09-02 株式会社東芝 半導体発光素子および半導体発光装置
JP3358556B2 (ja) * 1998-09-09 2002-12-24 日本電気株式会社 半導体装置及びその製造方法
US6853012B2 (en) * 2002-10-21 2005-02-08 Uni Light Technology Inc. AlGaInP light emitting diode
US7091653B2 (en) * 2003-01-27 2006-08-15 3M Innovative Properties Company Phosphor based light sources having a non-planar long pass reflector
US7136408B2 (en) * 2004-06-14 2006-11-14 Coherent, Inc. InGaN diode-laser pumped II-VI semiconductor lasers
US7223998B2 (en) * 2004-09-10 2007-05-29 The Regents Of The University Of California White, single or multi-color light emitting diodes by recycling guided modes
US7045375B1 (en) * 2005-01-14 2006-05-16 Au Optronics Corporation White light emitting device and method of making same

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