JP2009540617A5 - - Google Patents
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- JP2009540617A5 JP2009540617A5 JP2009515585A JP2009515585A JP2009540617A5 JP 2009540617 A5 JP2009540617 A5 JP 2009540617A5 JP 2009515585 A JP2009515585 A JP 2009515585A JP 2009515585 A JP2009515585 A JP 2009515585A JP 2009540617 A5 JP2009540617 A5 JP 2009540617A5
- Authority
- JP
- Japan
- Prior art keywords
- wavelength
- light
- emitting
- led
- potential well
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000004065 semiconductor Substances 0.000 claims 9
- 238000010521 absorption reaction Methods 0.000 claims 1
- 230000031700 light absorption Effects 0.000 claims 1
Claims (3)
ｂ）ｐｎ接合内に位置しない少なくとも１つのポテンシャル井戸と、ＬＥＤで放射される光子のエネルギー以下で、少なくとも１つのポテンシャル井戸の遷移エネルギーより大きいバンドギャップエネルギーを有する吸収層とを備える再発光半導体構造体と、
ｃ）前記ＬＥＤから放射される光を前記再発光半導体構造体へ反射するように位置決めされた反射体と、を含む装置。 a) an LED capable of emitting light of a first wavelength;
b) a re-emitting semiconductor structure comprising at least one potential well not located in the pn junction and an absorption layer having a band gap energy less than the energy of the photons emitted by the LED and greater than the transition energy of the at least one potential well Body,
and c) a reflector positioned to reflect light emitted from the LED to the re-emitting semiconductor structure.
ｂ）第１波長の光の吸収に応じて第２波長の光を放射可能であり、ｐｎ接合内に位置しない少なくとも１つのＩＩ−ＶＩ半導体ポテンシャル井戸を備える再発光半導体構造体と、
ｃ）前記第１波長の光を透過し、前記第２波長の光の少なくとも一部を反射する反射体と、を含む装置。 a) an LED capable of emitting light of a first wavelength;
b) a re-emitting semiconductor structure capable of emitting light of the second wavelength in response to absorption of light of the first wavelength and comprising at least one II-VI semiconductor potential well not located in the pn junction;
and c) a reflector that transmits the light of the first wavelength and reflects at least a part of the light of the second wavelength.
ｉ）ｐｎ接合内に位置し、第１波長の光を放射可能なＬＥＤを備える第１ポテンシャル井戸、及び
ｉｉ）ｐｎ接合内に位置せず、再発光半導体構造体を備えるＩＩ−ＶＩ半導体第２ポテンシャル井戸を含む、半導体ユニットと、
ｂ）前記ＬＥＤから放射される光を前記再発光半導体構造体へ反射するように位置決めされた反射体と、を含む装置。 a) a semiconductor unit,
i) a first potential well comprising an LED capable of emitting light of a first wavelength located in the pn junction; and ii) an II-VI semiconductor comprising a re-emitting semiconductor structure not located in the pn junction. A semiconductor unit including a potential well;
and b) a reflector positioned to reflect light emitted from the LED to the re-emitting semiconductor structure.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US80453806P | 2006-06-12 | 2006-06-12 | |
| PCT/US2007/070853 WO2007146863A1 (en) | 2006-06-12 | 2007-06-11 | Led device with re-emitting semiconductor construction and reflector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009540617A JP2009540617A (en) | 2009-11-19 |
| JP2009540617A5 true JP2009540617A5 (en) | 2010-08-12 |
Family
ID=38832113
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009515585A Pending JP2009540617A (en) | 2006-06-12 | 2007-06-11 | LED device having re-emitting semiconductor structure and reflector |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP2033237A4 (en) |
| JP (1) | JP2009540617A (en) |
| KR (1) | KR20090018627A (en) |
| CN (1) | CN101467273B (en) |
| TW (1) | TW200810156A (en) |
| WO (1) | WO2007146863A1 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102008012316B4 (en) * | 2007-09-28 | 2023-02-02 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Semiconductor light source with a primary radiation source and a luminescence conversion element |
| AU2010242785B2 (en) | 2009-04-30 | 2014-03-06 | Zeltiq Aesthetics, Inc. | Device, system and method of removing heat from subcutaneous lipid-rich cells |
| DE102013212372A1 (en) * | 2013-06-27 | 2014-12-31 | Robert Bosch Gmbh | Optical assembly |
| CN105865668B (en) * | 2015-01-20 | 2019-12-10 | 北京纳米能源与系统研究所 | Pressure sensing imaging array, equipment and manufacturing method thereof |
| JP7242886B2 (en) * | 2019-10-02 | 2023-03-20 | 富士フイルム株式会社 | backlight and liquid crystal display |
| JP2024044397A (en) * | 2022-09-21 | 2024-04-02 | 株式会社トプコン | plant sensor |
| JP2024044396A (en) * | 2022-09-21 | 2024-04-02 | 株式会社トプコン | plant sensor |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3559446B2 (en) * | 1998-03-23 | 2004-09-02 | 株式会社東芝 | Semiconductor light emitting element and semiconductor light emitting device |
| JP3358556B2 (en) * | 1998-09-09 | 2002-12-24 | 日本電気株式会社 | Semiconductor device and manufacturing method thereof |
| US6853012B2 (en) * | 2002-10-21 | 2005-02-08 | Uni Light Technology Inc. | AlGaInP light emitting diode |
| US7091653B2 (en) * | 2003-01-27 | 2006-08-15 | 3M Innovative Properties Company | Phosphor based light sources having a non-planar long pass reflector |
| US7136408B2 (en) * | 2004-06-14 | 2006-11-14 | Coherent, Inc. | InGaN diode-laser pumped II-VI semiconductor lasers |
| US7223998B2 (en) * | 2004-09-10 | 2007-05-29 | The Regents Of The University Of California | White, single or multi-color light emitting diodes by recycling guided modes |
| US7045375B1 (en) * | 2005-01-14 | 2006-05-16 | Au Optronics Corporation | White light emitting device and method of making same |
-
2007
- 2007-06-11 WO PCT/US2007/070853 patent/WO2007146863A1/en active Application Filing
- 2007-06-11 KR KR1020087030065A patent/KR20090018627A/en not_active Application Discontinuation
- 2007-06-11 JP JP2009515585A patent/JP2009540617A/en active Pending
- 2007-06-11 CN CN2007800219318A patent/CN101467273B/en not_active Expired - Fee Related
- 2007-06-11 TW TW096121063A patent/TW200810156A/en unknown
- 2007-06-11 EP EP07798368.2A patent/EP2033237A4/en not_active Withdrawn
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