JP2009510734A - 高周波変調表面発光型半導体レーザ - Google Patents
高周波変調表面発光型半導体レーザ Download PDFInfo
- Publication number
- JP2009510734A JP2009510734A JP2008532580A JP2008532580A JP2009510734A JP 2009510734 A JP2009510734 A JP 2009510734A JP 2008532580 A JP2008532580 A JP 2008532580A JP 2008532580 A JP2008532580 A JP 2008532580A JP 2009510734 A JP2009510734 A JP 2009510734A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- semiconductor laser
- surface emitting
- emitting semiconductor
- pumping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 117
- 238000005086 pumping Methods 0.000 claims abstract description 64
- 230000003287 optical effect Effects 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 230000005855 radiation Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 241001125929 Trisopterus luscus Species 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 102000029749 Microtubule Human genes 0.000 description 1
- 108091022875 Microtubule Proteins 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 210000004688 microtubule Anatomy 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/041—Optical pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/109—Frequency multiplication, e.g. harmonic generation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
図2は、本発明の実施例での、時間tに依存したポンピングレーザの駆動電流強度Iの概略的なグラフであり、
図3は、本発明の実施例での、時間tに依存した表面発光型半導体レーザの光学的な出力パワーPoutの概略的なグラフであり、
図4は、本発明の別の実施例による表面発光型半導体レーザの概略的な横断面図である。
Claims (15)
- 表面発光型半導体レーザであって、
半導体チップ(1)と、第1の共振器ミラー(4)と、少なくとも1つの別の共振器ミラー(8)と、少なくとも1つのポンピングレーザ(10、12)を有しており、
前記少なくとも1つの別の共振器ミラーは、前記半導体チップ(1)外に配置されており、前記第1の共振器ミラー(4)とともに、共振器長(L)を有するレーザ共振器を構成し、
前記少なくとも1つのポンピングレーザは、前記半導体レーザ(1)を光学的にポンピングするために、ポンピングパワーを有するポンピングビーム(14)を前記半導体チップ(1)内に放射する形式のものにおいて、
前記ポンピングパワーは変調周波数fpによって変調され、前記レーザ共振器は、当該変調周波数fpに合わせて調整された共振器長(L)を有している、
ことを特徴とする表面発光型半導体レーザ。 - 前記共振器長Lに対して:L〔mm〕≦250/fp〔MHz〕が当てはまる、請求項1記載の表面発光型半導体レーザ。
- 前記変調周波数fpに対して:fp≧1MHzが当てはまる、請求項1または2記載の表面発光型半導体レーザ。
- 前記変調周波数fpに対して:fp≧10MHzが当てはまる、請求項1または2記載の表面発光型半導体レーザ。
- 前記変調周波数fpに対して:fp≧50MHzが当てはまる、請求項1または2記載の表面発光型半導体レーザ。
- 前記共振器長Lは30mm以下であり、有利には20mm以下である、請求項1から5までのいずれか1項記載の表面発光型半導体レーザ。
- 前記ポンピングパワーは、前記ポンピングレーザ(10、12)を駆動する電流Iの変調によって変調される、請求項1から6までのいずれか1項記載の表面発光型半導体レーザ。
- 前記ポンピングパワーは、変調動作中に前記ポンピングレーザ(10、12)のレーザ閾値を下回らないように変調される、請求項1から7までのいずれか1項記載の表面発光型半導体レーザ。
- 前記表面発光型半導体レーザのレーザ閾値を、変調動作中に下回らない、請求項1から8までのいずれか1項記載の表面発光型半導体レーザ。
- 前記ポンピングレーザ(12)は、前記表面発光型半導体レーザの半導体チップ(1)内にモノリシックに組み込まれている、請求項1から9までのいずれか1項記載の表面発光型半導体レーザ。
- 前記ポンピングレーザ(10)は前記半導体チップ(1)外に配置されている、請求項1から9までのいずれか1項記載の表面発光型半導体レーザ。
- 前記レーザ共振器内に、前記半導体レーザから放出されたビームの周波数を変換する周波数変換素子(9)が配置されている、請求項1から11までのいずれか1項記載の表面発光型半導体レーザ。
- 前記周波数変換は、周波数倍化、殊に周波数の二倍化である、請求項12記載の表面発光型半導体レーザ。
- 前記半導体チップ(1)は赤外ビームを放出し、当該赤外ビームは前記周波数変換素子(9)によって、可視光、殊に緑色の可視光に変換される、請求項12または13記載の表面発光型半導体レーザ。
- 前記表面発光型半導体レーザの光学的出力パワーは10mW以上である、請求項1から14までのいずれか1項記載の表面発光型半導体レーザ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005046695 | 2005-09-29 | ||
DE102005055159A DE102005055159B4 (de) | 2005-09-29 | 2005-11-18 | Hochfrequenz-modulierter oberflächenemittierender Halbleiterlaser |
PCT/DE2006/001570 WO2007036192A1 (de) | 2005-09-29 | 2006-09-08 | Hochfrequenz-modulierter oberflächenemittierender halbleiterlaser |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2009510734A true JP2009510734A (ja) | 2009-03-12 |
Family
ID=37491732
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008532580A Pending JP2009510734A (ja) | 2005-09-29 | 2006-09-08 | 高周波変調表面発光型半導体レーザ |
Country Status (7)
Country | Link |
---|---|
US (1) | US20090219957A1 (ja) |
EP (1) | EP1929597A1 (ja) |
JP (1) | JP2009510734A (ja) |
KR (1) | KR20080065998A (ja) |
DE (1) | DE102005055159B4 (ja) |
TW (1) | TWI317194B (ja) |
WO (1) | WO2007036192A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008030254A1 (de) * | 2008-06-25 | 2009-12-31 | Osram Opto Semiconductors Gmbh | Halbleiterlasermodul |
KR101022568B1 (ko) * | 2008-12-24 | 2011-03-16 | 경희대학교 산학협력단 | 양자점을 이용한 레이저 디스플레이용 녹색광원 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005217428A (ja) * | 2004-01-30 | 2005-08-11 | Osram Opto Semiconductors Gmbh | 干渉フィルタを有する表面放出半導体レーザ |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5311526A (en) * | 1993-02-25 | 1994-05-10 | At&T Bell Laboratories | Article that comprises a semiconductor laser, and method of operating the article |
US20020048301A1 (en) * | 1999-07-30 | 2002-04-25 | Peidong Wang | Single mode operation of microelectromechanically tunable, half-symmetric, vertical cavity surface emitting lasers |
US6795477B1 (en) * | 1999-08-12 | 2004-09-21 | Cortek Inc. | Method for modulating an optically pumped, tunable vertical cavity surface emitting laser (VCSEL) |
DE10026734A1 (de) * | 2000-05-30 | 2001-12-13 | Osram Opto Semiconductors Gmbh | Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung |
DE10108079A1 (de) * | 2000-05-30 | 2002-09-12 | Osram Opto Semiconductors Gmbh | Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung |
DE10214120B4 (de) * | 2002-03-28 | 2007-06-06 | Osram Opto Semiconductors Gmbh | Optisch pumpbare oberflächenemittierende Halbleiterlaservorrichtung |
GB2399942A (en) * | 2003-03-24 | 2004-09-29 | Univ Strathclyde | Vertical cavity semiconductor optical devices |
GB0311563D0 (en) * | 2003-05-20 | 2003-06-25 | Nokia Corp | Optical data transmission system |
KR100668329B1 (ko) * | 2005-02-16 | 2007-01-12 | 삼성전자주식회사 | 변조기 내장형 광펌핑 반도체 레이저 장치 |
-
2005
- 2005-11-18 DE DE102005055159A patent/DE102005055159B4/de not_active Expired - Fee Related
-
2006
- 2006-09-08 US US11/992,681 patent/US20090219957A1/en not_active Abandoned
- 2006-09-08 KR KR1020087010328A patent/KR20080065998A/ko not_active Application Discontinuation
- 2006-09-08 JP JP2008532580A patent/JP2009510734A/ja active Pending
- 2006-09-08 WO PCT/DE2006/001570 patent/WO2007036192A1/de active Application Filing
- 2006-09-08 EP EP06775931A patent/EP1929597A1/de not_active Withdrawn
- 2006-09-25 TW TW095135299A patent/TWI317194B/zh active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005217428A (ja) * | 2004-01-30 | 2005-08-11 | Osram Opto Semiconductors Gmbh | 干渉フィルタを有する表面放出半導体レーザ |
Also Published As
Publication number | Publication date |
---|---|
DE102005055159B4 (de) | 2013-02-21 |
TW200715678A (en) | 2007-04-16 |
US20090219957A1 (en) | 2009-09-03 |
WO2007036192A1 (de) | 2007-04-05 |
TWI317194B (en) | 2009-11-11 |
EP1929597A1 (de) | 2008-06-11 |
KR20080065998A (ko) | 2008-07-15 |
DE102005055159A1 (de) | 2007-04-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7150705B2 (ja) | 窒化物系発光装置 | |
JP2006190976A (ja) | 複数の量子ウェルを有する外部共振器型の面発光レーザー素子 | |
Albrecht et al. | Multi-watt 1.25 µm quantum dot VECSEL | |
JP5362301B2 (ja) | レーザシステム | |
WO2005062434A1 (ja) | 面発光レーザおよびレーザ投射装置 | |
KR100668329B1 (ko) | 변조기 내장형 광펌핑 반도체 레이저 장치 | |
KR101015499B1 (ko) | 복수의 파장을 발생시키는 반도체 레이저 소자 및 상기반도체 레이저 소자용 레이저 펌핑부 | |
US6822988B1 (en) | Laser apparatus in which GaN-based compound surface-emitting semiconductor element is excited with GaN-based compound semiconductor laser element | |
JP2007049144A (ja) | 高出力垂直外部共振器型の面発光レーザ | |
JP2009510734A (ja) | 高周波変調表面発光型半導体レーザ | |
US8611383B2 (en) | Optically-pumped surface-emitting semiconductor laser with heat-spreading compound mirror-structure | |
Werner et al. | Direct modulation capabilities of micro-integrated laser sources in the yellow–green spectral range | |
US20190245319A1 (en) | Solid-state laser system | |
US11942763B2 (en) | Semiconductor laser, operating method for a semiconductor laser, and method for determining the optimum fill factor of a semiconductor laser | |
JP2009542016A (ja) | 垂直方向の放射方向および安定化された放射波長を有する表面発光型の半導体基体 | |
Hasler et al. | Improving the modulation efficiency of high-power distributed Bragg reflector tapered diode lasers | |
JP4274393B2 (ja) | 半導体発光装置 | |
Adamiec et al. | Twin-contact 645-nm tapered laser with 500-mW output power | |
KR100737609B1 (ko) | 수직 외부 공진형 표면 방출 광 펌핑 반도체 레이저 및 그제조방법 | |
JPH09297331A (ja) | 短波長レーザ装置 | |
KR100723178B1 (ko) | 고출력 레이저 장치 | |
McInerney et al. | High brightness 980 nm pump lasers ased on the Novalux extended cavity surface-emitting laser (NECSEL) concept | |
Sebastian et al. | High-brightness high-power 9xx-nm diode laser bars: developments at Jenoptik Diode Lab | |
Ostendorf et al. | High-power frequency stabilized tapered diode amplifiers at 1064 nm | |
CN101273503A (zh) | 高频调制的表面发射的半导体激光器 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090515 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20101227 Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20101228 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110729 Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110729 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110902 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20111201 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20111208 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20120307 |