JP2009302587A - Semiconductor light emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide semiconductor light emitting elements and semiconductor devices capable of emitting light at a high luminance in a region of various wavelengths from visible light to infrared rays with an extremely stable emission wavelength, and to provide a method of manufacturing the same. <P>SOLUTION: A fluorescent material having a wavelength conversion function is properly mixed, accumulated or arranged to the inside, the surface of a semiconductor light emitting element, the resin portion of a semiconductor light emitting device, or the surface or the inside of other envelopes. This can provide semiconductor light emitting elements and light emitting devices which can convert wavelengths of light emission from the semiconductor light emitting elements at an extremely high efficiency to extract it to the outside. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a semiconductor light emitting element, a semiconductor light emitting device, and a manufacturing method thereof. More specifically, the present invention relates to a semiconductor light emitting device that can extract light with wavelength conversion with high efficiency to the outside by exciting a phosphor.

  Semiconductor light-emitting elements and various semiconductor light-emitting devices equipped with the semiconductor light-emitting elements have many advantages such as compactness, low power consumption, and high reliability. The display panel, railway / traffic signal, in-vehicle lamp, etc. are also being widely applied.

  Among these semiconductor light emitting devices, light emitting devices using gallium nitride based semiconductors have recently attracted attention. A gallium nitride based semiconductor is a direct transition type III-V compound conductor and has a feature that it can emit light with high efficiency in a relatively short wavelength region.

Note that the "gallium nitride based semiconductor" as used _{herein, In x Al y Ga 1-} xy N (0 ≦ x, y ≦ 1, x + y ≦ 1) comprising chemical zero or al the composition ratio x and y in formula 1 Semiconductors of all compositions varied within the range of For example, InGaN (x> 0, y = 0) is also included in the “gallium nitride-based semiconductor”.

Gallium nitride semiconductors are promising as materials for LEDs and semiconductor lasers because the band gap changes from 1.89 to 6.2 eV by controlling the composition x and y. In particular, if light can be emitted with high brightness in the blue or ultraviolet wavelength region, the recording capacity of various optical discs can be doubled and the display device can be made full color. Therefore, short-wavelength light-emitting element using the _{In x Al y Ga 1-xy} N -based semiconductor rapidly has been developed toward its initial characteristics and improved reliability.

  As a reference document disclosing the structure of a conventional light emitting device using such a gallium nitride based semiconductor, for example, Non-Patent Document 1 or Patent Document 1 can be cited.

  FIG. 97 is a schematic cross-sectional view showing a configuration of a conventional gallium nitride light-emitting element. The schematic configuration will be described as follows. That is, the light emitting device 100 has a semiconductor multilayer structure stacked on the sapphire substrate 112. On the sapphire substrate 112, a buffer layer 114, an n-type contact layer 116, an n-type cladding layer 118, a light emitting layer 120, a p-type cladding layer 122, and a p-type contact layer 124 are formed in this order.

  The material of the buffer layer 114 can be n-type GaN, for example. The n-type contact layer 116 is an n-type semiconductor layer having a high carrier concentration so as to ensure ohmic contact with the n-side electrode 134, and the material thereof can be, for example, GaN. Each of the n-type cladding layer 118 and the p-type cladding layer 122 has a role of confining light in the light emitting layer 120 and is required to have a refractive index lower than that of the light emitting layer. The material can be, for example, AlGaN having a larger bad gap than the light emitting layer 120. The light emitting layer 120 is a semiconductor layer that emits light by recombination of charges injected as current into the light emitting element. As the material, for example, undoped InGaN can be used. The p-type contact layer 124 is a p-type semiconductor layer having a high carrier concentration so as to ensure ohmic contact with the p-side electrode, and the material thereof can be, for example, GaN.

A p-side electrode layer 126 is deposited on the p-type contact layer 124.
An n-side electrode layer 134 is deposited on the n-type contact layer 118.

  A current blocking layer 130 is formed on a part of the p-type contact layer 124. A bonding pad 132 made of Au is deposited on the current blocking layer 130, and a part thereof is in contact with the p-side electrode 126. A wire (not shown) for supplying a driving current to the element is bonded to the bonding pad 132.

  The current blocking layer 130 has a role of suppressing light emission from occurring below the Au electrode 132. That is, in the light emitting element 100, light emitted from the light emitting layer 120 is transmitted through the electrode layer 126 and extracted upward. However, the bonding pad 132 cannot transmit light because the electrode is thick. Therefore, by providing the current blocking layer 130, a driving current is not injected under the bonding pad 132, and unnecessary light emission is suppressed.

  A bonding pad 132 is also stacked on the n-side electrode layer 134. The bonding pad 132 can be formed by depositing Au thick. Further, the surface portion other than the bonding pad 132 is covered with a silicon oxide layer 145.

  In the light emitting device 100 described above, the back surface side of the substrate 112 is bonded to a mounting member (not shown) such as a lead frame or a mounting substrate, and wires are bonded to the bonding pads 132 to supply drive current.

Jpn. J. et al. Appl. Phys. 28 (1989) p. L2112, Jpn. J. et al. Appl. Phys. 32 (1993) p. L8

JP-A-5-291621

  However, the conventional light emitting device as shown in FIG. 97 has the following problems because it has a structure in which light emitted from the semiconductor light emitting element is directly taken out to the outside.

  First, there is a problem that the emission wavelength varies from element to element due to variations in the structure of the light emitting elements. That is, even if the semiconductor light emitting device is manufactured under the same conditions, the emission wavelength tends to vary due to variations in the amount of impurities mixed in and the thickness of each layer.

  Secondly, there has been a problem that the emission wavelength varies depending on the drive current. In other words, the emission wavelength may vary depending on the amount of current supplied to the semiconductor light emitting device, and it is difficult to control the emission luminance and the emission wavelength independently.

  Third, there is a problem that the emission wavelength varies depending on the temperature. In other words, when the temperature of the light emitting layer portion of the semiconductor light emitting device changes, the effective band gap of the light emitting layer also changes, causing a problem that the emission wavelength varies.

  Fourth, there is a problem that the material and structure of the built-in semiconductor light emitting element must be appropriately selected and changed according to the emission wavelength. For example, in order to emit light in red, an AlGaAs material is used, an optimal material such as a GaAsP or lnGaAlP material in yellow, an InGaAlP or GaP material in green, and an InGaN material in blue. There was a problem that it was necessary to select according to the wavelength.

  The present invention has been made in view of this point. That is, an object of the present invention is to provide a semiconductor light emitting device that can emit light with high luminance at various wavelengths from visible light to infrared region, and having an extremely stable emission wavelength.

  The present invention provides a lead frame, a semiconductor light emitting device mounted on the lead frame, and a surface of the lead frame on the same main surface side as a surface on which the semiconductor light emitting device is mounted. A semiconductor light emitting device comprising: a fluorescent material layer that absorbs the emitted light having the first wavelength, converts the light into a light having a second wavelength different from the first wavelength, and emits the light. It is to provide.

The present invention is implemented in the form as described above, and has the effects described below.
According to the present invention, the light emission from the light emitting layer of the semiconductor light emitting device is not directly taken out, but the wavelength conversion is performed by the fluorescent material. Therefore, it depends on variations in manufacturing parameters of the semiconductor light emitting device, drive current, temperature, and the like. Thus, the problem that the emission wavelength fluctuates can be solved. That is, according to the present invention, the emission wavelength is extremely stable, and the emission luminance and the emission wavelength can be controlled independently.

  Moreover, according to the present invention, a plurality of emission wavelengths can be easily obtained by appropriately combining the fluorescent materials to be used. For example, when a red (R), green (G), and blue (B) fluorescent substance is appropriately mixed and contained in the light emitting element, light emission of white light can be easily obtained.

  Furthermore, according to the present invention, it is not necessary to appropriately select and change the material and structure of the built-in semiconductor light emitting element according to the emission wavelength. For example, conventionally, an AlGaAs-based material is used to emit light in red, an GaAsP-based or InGaAlP-based material in yellow, a GaP or InGaAlP-based material in green, and an InGaN-based material in blue. There was a problem that the material had to be selected according to its wavelength. On the other hand, according to the present invention, the type of the fluorescent material may be appropriately selected according to the emission wavelength, and there is no need to change the semiconductor light emitting element.

  Further, according to the present invention, even when semiconductor light emitting elements having different emission colors need to be arranged, the emission color can be changed only by changing the type of phosphor used. Can be the same. Therefore, the structure of the light emitting device can be greatly simplified, the manufacturing cost can be significantly reduced, the reliability is high, and the driving current, supply voltage, or element size is shared. By doing so, there is an advantage that the application range can be remarkably expanded.

  As described above, according to the present invention, a semiconductor light emitting device and a semiconductor capable of emitting light with high luminance at various wavelengths from visible light to infrared region with a relatively simple configuration and having an emission wavelength extremely stable. A light emitting device can be provided, and there are significant industrial advantages.

It is sectional drawing showing schematic structure of the 1st semiconductor light-emitting device by this invention. It is sectional drawing showing schematic structure of the 2nd semiconductor light-emitting device by this invention. It is a cross-sectional schematic diagram showing the 1st semiconductor light-emitting device concerning 2nd Embodiment of this invention. It is a cross-sectional schematic diagram showing the 2nd semiconductor light-emitting device concerning 2nd Embodiment of this invention. It is a cross-sectional schematic diagram showing the 3rd semiconductor light-emitting device concerning 2nd Embodiment of this invention. It is a cross-sectional schematic diagram showing the 4th semiconductor light-emitting device concerning 2nd Embodiment of this invention. It is a cross-sectional schematic diagram showing the 5th semiconductor light-emitting device concerning 2nd Embodiment of this invention. It is a cross-sectional schematic diagram showing the 6th semiconductor light-emitting device concerning 2nd Embodiment of this invention. It is a cross-sectional schematic diagram showing the 7th semiconductor light-emitting device concerning 2nd Embodiment of this invention. It is a cross-sectional schematic diagram showing the 8th semiconductor light-emitting device concerning 2nd Embodiment of this invention. It is a cross-sectional schematic diagram showing the 9th semiconductor light-emitting device concerning 2nd Embodiment of this invention. It is a cross-sectional schematic diagram showing the 10th semiconductor light-emitting device concerning 2nd Embodiment of this invention. It is a cross-sectional schematic diagram showing the 11th semiconductor light-emitting device concerning 2nd Embodiment of this invention. It is a cross-sectional schematic diagram showing the 12th semiconductor light-emitting device concerning 2nd Embodiment of this invention. It is a cross-sectional schematic diagram showing the 13th semiconductor light-emitting device concerning 2nd Embodiment of this invention. It is a cross-sectional schematic diagram showing the 1st semiconductor light-emitting device concerning 3rd Embodiment of this invention. It is a cross-sectional schematic diagram showing the 2nd semiconductor light-emitting device concerning 3rd Embodiment of this invention. It is a cross-sectional schematic diagram showing the 3rd semiconductor light-emitting device concerning 3rd Embodiment of this invention. It is a cross-sectional schematic diagram showing the 4th semiconductor light-emitting device concerning 3rd Embodiment of this invention. It is a cross-sectional schematic diagram showing the 5th semiconductor light-emitting device concerning 3rd Embodiment of this invention. It is a cross-sectional schematic diagram showing the 6th semiconductor light-emitting device concerning 3rd Embodiment of this invention. It is a cross-sectional schematic diagram showing the 7th semiconductor light-emitting device concerning 3rd Embodiment of this invention. It is a cross-sectional schematic diagram showing the 8th semiconductor light-emitting device concerning 3rd Embodiment of this invention. It is a cross-sectional schematic diagram showing the 9th semiconductor light-emitting device concerning 3rd Embodiment of this invention. It is a cross-sectional schematic diagram showing the 10th semiconductor light-emitting device concerning 3rd Embodiment of this invention. It is a cross-sectional schematic diagram showing the 11th semiconductor light-emitting device concerning 3rd Embodiment of this invention. It is a schematic diagram showing the 1st semiconductor light-emitting device concerning 4th Embodiment of this invention. It is a schematic diagram showing the 2nd semiconductor light-emitting device concerning 4th Embodiment of this invention. It is a schematic diagram showing the 3rd semiconductor light-emitting device concerning 4th Embodiment of this invention. It is a schematic diagram showing the 4th semiconductor light-emitting device concerning 4th Embodiment of this invention. It is a schematic diagram showing the 5th semiconductor light-emitting device concerning 4th Embodiment of this invention. It is a schematic diagram showing the 6th semiconductor light-emitting device concerning 4th Embodiment of this invention. It is a schematic diagram showing the 7th semiconductor light-emitting device concerning 4th Embodiment of this invention. It is a schematic diagram showing the 8th semiconductor light-emitting device concerning 4th Embodiment of this invention. It is a schematic diagram showing the 1st semiconductor light-emitting device concerning 5th Embodiment of this invention. It is a schematic diagram showing the 2nd semiconductor light-emitting device concerning 5th Embodiment of this invention. It is a schematic diagram showing the 3rd semiconductor light-emitting device concerning 5th Embodiment of this invention. It is a schematic diagram showing the 4th semiconductor light-emitting device concerning 5th Embodiment of this invention. It is a schematic diagram showing the 5th semiconductor light-emitting device concerning 5th Embodiment of this invention. It is a schematic diagram showing the 6th semiconductor light-emitting device concerning 5th Embodiment of this invention. It is a schematic diagram showing the 1st semiconductor light-emitting device concerning 6th Embodiment of this invention. It is a schematic diagram showing the 2nd semiconductor light-emitting device concerning 6th Embodiment of this invention. It is a schematic diagram showing the 3rd semiconductor light-emitting device concerning 6th Embodiment of this invention. It is a schematic diagram showing the 4th semiconductor light-emitting device concerning 6th Embodiment of this invention. It is a schematic diagram showing the 5th semiconductor light-emitting device concerning 6th Embodiment of this invention. It is a schematic diagram showing the 6th semiconductor light-emitting device concerning 6th Embodiment of this invention. It is a schematic diagram showing the 1st semiconductor light-emitting device concerning 7th Embodiment of this invention. It is a schematic diagram showing the 2nd semiconductor light-emitting device concerning 7th Embodiment of this invention. It is a schematic diagram showing the 3rd semiconductor light-emitting device concerning 7th Embodiment of this invention. It is a schematic diagram showing the 4th semiconductor light-emitting device concerning 7th Embodiment of this invention. It is a schematic diagram showing the 5th semiconductor light-emitting device concerning 7th Embodiment of this invention. It is a schematic diagram showing the 6th semiconductor light-emitting device concerning 7th Embodiment of this invention. It is a schematic diagram showing the 1st semiconductor light-emitting device concerning 8th Embodiment of this invention. It is a schematic diagram showing the 2nd semiconductor light-emitting device concerning 8th Embodiment of this invention. It is a schematic diagram showing the 3rd semiconductor light-emitting device concerning 8th Embodiment of this invention. It is a schematic diagram showing the 4th semiconductor light-emitting device concerning 8th Embodiment of this invention. It is a schematic diagram showing the 5th semiconductor light-emitting device concerning 8th Embodiment of this invention. It is a schematic diagram showing the 6th semiconductor light-emitting device concerning 8th Embodiment of this invention. It is a schematic diagram showing the 7th semiconductor light-emitting device concerning 8th Embodiment of this invention. It is a schematic diagram showing the 8th semiconductor light-emitting device concerning 8th Embodiment of this invention. It is a schematic diagram showing the 9th semiconductor light-emitting device concerning 8th Embodiment of this invention. It is a schematic diagram showing the 10th semiconductor light-emitting device concerning 8th Embodiment of this invention. It is a schematic diagram showing the 11th semiconductor light-emitting device concerning 8th Embodiment of this invention. It is a schematic diagram showing the 12th semiconductor light-emitting device concerning 8th Embodiment of this invention. It is a schematic diagram showing the 1st semiconductor light-emitting device concerning 9th Embodiment of this invention. It is a schematic diagram showing the 2nd semiconductor light-emitting device concerning 9th Embodiment of this invention. It is a schematic diagram showing the 3rd semiconductor light-emitting device concerning 9th Embodiment of this invention. It is a schematic diagram showing the 4th semiconductor light-emitting device concerning 9th Embodiment of this invention. It is a schematic diagram showing the 5th semiconductor light-emitting device concerning 9th Embodiment of this invention. It is a schematic diagram showing the 6th semiconductor light-emitting device concerning 9th Embodiment of this invention. It is a schematic diagram showing the 7th semiconductor light-emitting device concerning 9th Embodiment of this invention. It is a schematic diagram showing the 8th semiconductor light-emitting device concerning 9th Embodiment of this invention. It is a schematic diagram showing the 9th semiconductor light-emitting device concerning 9th Embodiment of this invention. It is a schematic diagram showing the 10th semiconductor light-emitting device concerning 9th Embodiment of this invention. It is a schematic diagram showing the 11th semiconductor light-emitting device concerning 9th Embodiment of this invention. It is a schematic diagram showing the 12th semiconductor light-emitting device concerning 9th Embodiment of this invention. It is a schematic diagram showing the 1st semiconductor light-emitting device concerning 10th Embodiment of this invention. It is a schematic diagram showing the 2nd semiconductor light-emitting device concerning 10th Embodiment of this invention. It is a schematic diagram showing the 3rd semiconductor light-emitting device concerning 10th Embodiment of this invention. It is a schematic diagram showing the 4th semiconductor light-emitting device concerning 10th Embodiment of this invention. It is a schematic diagram showing the 5th semiconductor light-emitting device concerning 10th Embodiment of this invention. It is a schematic diagram showing the 6th semiconductor light-emitting device concerning 10th Embodiment of this invention. It is a schematic diagram showing the 7th semiconductor light-emitting device concerning 10th Embodiment of this invention. It is a schematic diagram showing the 8th semiconductor light-emitting device concerning 10th Embodiment of this invention. It is a schematic diagram showing the 9th semiconductor light-emitting device concerning 10th Embodiment of this invention. It is a schematic diagram showing the 10th semiconductor light-emitting device concerning 10th Embodiment of this invention. It is a schematic diagram showing the 11th semiconductor light-emitting device concerning 10th Embodiment of this invention. It is a schematic diagram showing the 12th semiconductor light-emitting device concerning 10th Embodiment of this invention. It is a schematic diagram showing the 1st semiconductor light-emitting device concerning 11th Embodiment of this invention. It is a schematic diagram showing the 2nd semiconductor light-emitting device concerning 11th Embodiment of this invention. It is a schematic diagram showing the 3rd semiconductor light-emitting device concerning 11th Embodiment of this invention. It is a schematic diagram showing the 4th semiconductor light-emitting device concerning 11th Embodiment of this invention. It is a schematic diagram showing the 5th semiconductor light-emitting device concerning 11th Embodiment of this invention. It is a schematic diagram showing the 6th semiconductor light-emitting device concerning 11th Embodiment of this invention. It is a schematic diagram showing the 7th semiconductor light-emitting device concerning 11th Embodiment of this invention. It is a schematic diagram showing the semiconductor light-emitting device concerning 12th Embodiment of this invention. It is a schematic sectional drawing showing the structure of the conventional gallium nitride type light emitting element.

  According to the present invention, a fluorescent material having a wavelength conversion function is appropriately mixed, deposited, or arranged on the inside or surface of a semiconductor light emitting element, or on the resin portion of a semiconductor light emitting device or the surface or inside of another envelope. Thus, the present invention provides a semiconductor light emitting element and a light emitting device that can convert the wavelength of light emitted from the semiconductor light emitting element with extremely high efficiency and take it out to the outside.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
First, as a first embodiment of the present invention, a semiconductor light emitting device containing a fluorescent material will be described with a specific example.

FIG. 1 is a sectional view showing a schematic configuration of a first semiconductor light emitting device according to the present invention.
That is, the semiconductor light emitting device 10 according to the present invention is a gallium nitride based semiconductor light emitting device and has a layered structure laminated on the sapphire substrate 12. On the sapphire substrate 12, a buffer layer 14, an n-type contact layer 16, an n-type cladding layer 18, a light emitting layer 20, a p-type cladding layer 22 and a p-type contact layer 24 are formed in this order.

  The material of the buffer layer 14 can be, for example, n-type GaN. The n-type contact layer 16 is an n-type semiconductor layer having a high carrier concentration so as to ensure ohmic contact with the n-side electrode 34, and the material thereof can be, for example, GaN. Each of the n-type cladding layer 18 and the p-type cladding layer 22 has a role of confining light in the light emitting layer 20, and is required to have a refractive index lower than that of the light emitting layer. The material can be, for example, AlGaN having a larger bad gap than the light emitting layer 20. The light emitting layer 20 is a semiconductor layer that emits light by recombination of charges injected as current into the light emitting element. As the material, for example, undoped InGaN can be used. The p-type contact layer 24 is a p-type semiconductor layer having a high carrier concentration so as to ensure ohmic contact with the p-side electrode, and the material thereof can be, for example, GaN.

A p-side electrode layer 26 is deposited on the p-type contact layer 24. The p-side electrode layer 26 can be formed, for example, by thinly depositing a metal material such as gold so as to have translucency. Alternatively, the p-side electrode layer 26 may be formed of a light-transmitting conductive film such as indium tin oxide (ITO).
An n-side electrode layer 34 is deposited on the n-type contact layer 16.

A current blocking layer 30 is formed on a part of the p-type contact layer 24.
A bonding pad 32 made of Au is deposited on the current blocking layer 30, and a part thereof is in contact with the p-side electrode 26. A wire (not shown) for supplying a drive current to the element is bonded to the bonding pad 32.

  The current blocking layer 30 has a role of suppressing light emission from occurring below the Au electrode 32. That is, in the light emitting element 10, light emitted from the light emitting layer 20 is transmitted through the electrode layer 26 and extracted upward. However, the bonding pad 32 cannot transmit light because the electrode is thick. Therefore, by providing the current blocking layer 30, the driving current is not injected under the bonding pad 32, and unnecessary light emission is suppressed.

A bonding pad 32 is also laminated on the n-side electrode layer 34.
The bonding pad 32 can be formed by depositing Au thick. Further, the surface portion other than the bonding pad 32 is covered with a silicon oxide layer 45.

In the present invention, a fluorescent material is contained or deposited in at least one portion of the semiconductor light emitting device 10. Examples of phosphors that are efficiently excited by light in the ultraviolet region include Y ₂ O ₂ S: Eu that emits red light, and (Sr, Ca, Ba, Eu) ₁₀ (PO ₄ ) ₆ · Cl ₂ , which emits green light includes 3 (Ba, Mg, Eu, Mn) O · 8Al ₂ O _{3 and the} like. If these fluorescent substances are mixed at an appropriate ratio, almost all the color tones in the visible light region can be expressed.

  Moreover, these fluorescent materials have an absorption peak in a wavelength band of 340 to 380 nm. Therefore, in order to efficiently perform wavelength conversion with these fluorescent materials, it is desirable that the light emitting layer 20 emit ultraviolet rays having a wavelength band of 380 nm or less.

  First, the p-side electrode layer 26 can be cited as a location where the semiconductor light emitting element contains a fluorescent material. Next, the silicon oxide layer 45 or the current blocking layer 30 can be cited. Moreover, at least any one layer of each semiconductor layer 14-24 can be mentioned. Furthermore, the substrate 12 can be mentioned.

  Examples of a method for causing the p-side electrode 26 to contain the fluorescent material include a sputtering method and a vapor deposition method. That is, when the electrode 26 is formed by these methods, a fluorescent substance can be added and added at the same time. The silicon oxide film 45 can also contain a fluorescent material by a similar method. Alternatively, a fluorescent material may be added by a CVD method.

  In addition, as a method of including the fluorescent material in any of the semiconductor layers 14 to 24, for example, in the crystal growth step, the fluorescent material is added simultaneously, or after the crystal growth, the fluorescent material is added to the semiconductor crystal by, for example, ion implantation. The method of driving in can be mentioned. A fluorescent material can be added to the substrate 12 by the same method.

  On the other hand, a fluorescent material may be deposited between the layers and the surface of the semiconductor light emitting device 10. That is, any layer between the substrate 12 and the p-type contact layer 24, between the semiconductor layer and the silicon oxide layer 45, between the semiconductor layer and the electrode 26 or 34, the surface of the silicon oxide layer 45, the electrode 26 Alternatively, it may be deposited on the surface 34 or the like. Examples of the method for depositing such a fluorescent material include an electron beam evaporation method, a sputtering method, and a coating method. In addition, for example, a fluorescent material can be formed as an insulating film on the p-type contact layer 24 to obtain an effect as a current blocking layer.

  Examples of a method for depositing a fluorescent substance on the surface of the light emitting element include a method in which a phosphor is dispersed in a solvent, applied to the surface of the light emitting element, and dried. Here, examples of the solvent in which the phosphor is dispersed include an alkali silicate solution, a silicate colloid aqueous solution, a phosphate aqueous solution, a silicate compound-dissolving organic solvent, a rubber-containing organic solvent, and a natural glue aqueous solution. In addition to a method in which phosphors are dispersed in these solvents and applied to the surface of the light-emitting element, for example, these solvents are applied to the surface of the light-emitting elements, and then the phosphor is sprinkled or sprayed thereon. Also, a phosphor layer can be deposited.

  According to the present invention, the light emitted from the semiconductor light emitting device is converted into light having a longer wavelength by containing or depositing the fluorescent material in any part of the semiconductor light emitting device, as described above. Can be supplied externally.

  For example, when the light emitting layer 20 of the light emitting element is made of GaN, the obtained light emission wavelength is light in the ultraviolet region with a light emission wavelength of 360 to 380 nanometers, and the light in the ultraviolet region is wavelength-converted with a fluorescent material. Thus, it can be taken out as predetermined visible light or light in the infrared region.

  When the light emitting layer 20 is made of InGaN, for example, blue light emission can be obtained according to the composition of indium. Also in this case, the semiconductor light emitting device according to the present invention can be configured by using a fluorescent material that receives the light emitted from the blue region, converts the wavelength, and emits light having a longer wavelength. Examples of such fluorescent substances include organic phosphors in addition to the inorganic phosphors described above. Examples of the organic phosphor include rhodamine B that emits red light, and brilliant sulfoflavine FF that emits green light.

  According to the present invention, light emission from the light emitting layer of the semiconductor light emitting device is not directly taken out, but wavelength conversion is performed by the fluorescent material. Therefore, as described above, variations in device manufacturing parameters, drive current, temperature, etc. Depending on the wavelength, the problem of wavelength variation can be solved. That is, according to the present invention, the light emission luminance and the light emission wavelength of the light emitting element can be controlled independently.

  In addition, according to the present invention, a plurality of emission wavelengths can be easily obtained by appropriately combining the fluorescent materials as described above. For example, when a red (R), green (G), and blue (B) fluorescent substance is appropriately mixed and contained in the light emitting element, light emission of white light can be easily obtained.

  In the example shown in FIG. 1, the gallium nitride semiconductor light emitting device using sapphire as the substrate 12 has been described as an example, but other than this, for example, SiC, GaN, spinel, ZnO, silicon, The present invention can be similarly applied to gallium nitride-based semiconductor light-emitting elements using various substrates such as GaAs.

  Further, the structure is not limited to the illustrated double heterostructure, and the present invention is similarly applied to semiconductor light emitting devices having various structures such as a single heterostructure and a multiple quantum well structure. Can be applied.

Next, the second semiconductor light emitting device according to the present invention will be described.
FIG. 2 is a cross-sectional view illustrating a schematic configuration of a second semiconductor light emitting device according to the present invention.
That is, the semiconductor light emitting device 50 according to the present invention is a ZnSe-based semiconductor light emitting device, and has a layer structure laminated on the substrate 52. That is, on the GaAs substrate 52, the buffer layer 54, the n-type cladding layer 58, the light emitting layer 60, the p-type cladding layer 62, and the light-transmitting conductive film 64 are formed in this order.

  The material of the buffer layer 54 can be n-type ZnSe, for example. Each of the n-type cladding layer 58 and the p-type cladding layer 62 has a role of confining light in the light emitting layer 60 and is required to have a refractive index lower than that of the light emitting layer. The material can be, for example, ZnSSe having a larger band gap than the light emitting layer 60. The light emitting layer 60 is a semiconductor layer that emits light by recombination of charges injected as current into the light emitting element. As the material, for example, undoped ZnSe can be used. The light transmissive conductive film 64 is a conductive film having a high light transmittance, and can be formed of, for example, indium tin oxide (ITO).

  A p-side electrode 66 is deposited on the light transmissive conductive film 64. The p-side electrode 66 can be formed, for example, by depositing a metal material such as gold. An n-side electrode 68 is formed on the back surface of the substrate 52. Furthermore, the surface of the element is appropriately covered with a protective film 70 such as silicon oxide.

  Also in the semiconductor light emitting device 50 shown in FIG. 2, the light from the light emitting layer 60 is wavelength-converted to the outside by containing or depositing a fluorescent material at any location, as in the light emitting device described above. It can be taken out.

  That is, in the ZnSe-based semiconductor light emitting device 50, light having a wavelength in the blue region or the blue-violet region is obtained from the light emitting layer 60. The blue light can be converted into a wavelength by a fluorescent material, and visible light or infrared light having a longer wavelength can be extracted outside.

  The location where the semiconductor light emitting device 50 contains a fluorescent material can include various locations as in the light emitting device 10 described above. That is, first, the p-side electrode layer 66 can be cited. Next, a light transmissive conductive film 64 can be given. Furthermore, the protective film 70 can be mentioned. In addition, at least one of the semiconductor layers 54 to 62 can be given. Further, a substrate 52 can be cited.

  Examples of the method for adding the fluorescent substance to the p-side electrode 66 and the light-transmitting conductive film 64 include a sputtering method and a vapor deposition method. That is, when the electrode 66 and the conductive film 64 are formed by these methods, a fluorescent substance can be added and added at the same time. The protective film 70 can also contain a fluorescent material by the same method. Alternatively, a fluorescent material may be added by a CVD method.

  In addition, as a method of including the fluorescent material in any of the semiconductor layers 54 to 62, for example, a method of simultaneously adding the fluorescent material in the crystal growth step, or a method of adding the fluorescent material to the semiconductor crystal by, for example, ion implantation after the crystal growth. The method of driving in can be mentioned. The fluorescent material can be added to the substrate 52 by the same method.

  On the other hand, a fluorescent material may be deposited between the layers or the surface of the semiconductor light emitting device 50. That is, any layer between the substrate 52 and the light-transmitting conductive film 64, between the protective film 70, between the semiconductor layer and the electrode 66 or 68, the surface of the protective film 70, the surface of the electrode 66 or 68. It may be deposited on the surface. Examples of the method for depositing such a fluorescent material include an electron beam evaporation method, a sputtering method, and a coating method. Further, for example, a fluorescent material can be formed as an insulating film on the light-transmitting conductive film 64 to obtain the effect as a current blocking layer.

  According to the present invention, the light emitted from the semiconductor light emitting device is converted into light having a longer wavelength by containing or depositing the fluorescent material in any part of the semiconductor light emitting device, as described above. Can be supplied externally.

  In FIG. 2, the ZnSe-based semiconductor light emitting device has been described as an example, but the present invention is not limited to this. In other words, the present invention can be similarly applied to various semiconductor light emitting devices such as SiC, ZnS, and BN. That is, these semiconductor light emitting elements can also emit light with high efficiency in a short wavelength region such as blue, and the wavelength of the light in this short wavelength region is converted with a fluorescent material to extract visible light or infrared light to the outside. Will be able to.

  Next, as a second embodiment of the present invention, a light-emitting device equipped with the semiconductor light-emitting element according to the present invention as described above will be described with reference to 13 specific examples.

  FIG. 3 is a schematic cross-sectional view showing the first semiconductor light emitting device according to this embodiment. The semiconductor light emitting device 100A shown in the figure is a so-called “lead frame type” “LED lamp”. That is, the semiconductor light emitting element 10 or 50 is mounted on the bottom of the cup of the lead frame 110. The p-side electrode and the n-side electrode of the light emitting element are connected to the lead frames 110 and 120 by wires 130 and 130, respectively. Further, the leading end of the lead frame is molded and protected by a resin 140.

  According to the present invention, since the semiconductor light emitting element 10 or 50 contains a fluorescent material, the light emitting device can be assembled in exactly the same process as a general light emitting device that does not contain a fluorescent material. In addition, since the fluorescent material is not included in the sealing resin, durability against temperature change does not deteriorate. Therefore, reliability can be improved as compared with a light emitting device containing a fluorescent substance in a resin. Furthermore, even when the emission wavelength of the light emitting layer of the light emitting element is ultraviolet light of 380 nm or less, the wavelength is converted to the long wavelength side by the fluorescent substance before the light is extracted to the outside of the light emitting element. Damage to the stop resin and other mounting members can be eliminated. In addition, when a semiconductor laser is used as the semiconductor light emitting element, the process of applying the fluorescent material in the assembly process can be omitted, so that productivity and reliability can be improved similarly. Further, there is no need to provide a cup-shaped envelope for filling a resin containing a fluorescent material, and productivity is dramatically improved.

Next, a modified example of the semiconductor light emitting device in which the semiconductor light emitting element shown in FIG. 1 or FIG. 2 is mounted will be described.
FIG. 4 is a partial cross-sectional schematic diagram showing the second semiconductor light emitting device according to the present embodiment. The semiconductor light emitting device 200A shown in the figure is a so-called “stem type” “LED lamp”. Here, the stem 210 has a configuration in which the lead pins 222 and 226 are molded and fixed by the insulating member 220.
As this insulating member 220, for example, ceramics or resin can be used. The lead pins 222 and 226 have outer leads 224 and 228 extending to the outside, respectively. The semiconductor light emitting element 10 or 50 is mounted on the top of the lead pin 222. One electrode of the light emitting element is connected to the lead pin 226 by a wire 230. Furthermore, the light emitting element is molded and protected by the resin 240.

  Also in the stem type LED lamp as shown in FIG. 4, by mounting the semiconductor light emitting element 10 or 50 according to the present invention, various effects as described above with reference to FIG. 3 can be obtained similarly.

  FIG. 5 is a schematic cross-sectional view showing the third semiconductor light emitting device according to this embodiment. The semiconductor light emitting device 250A shown in the figure is a so-called “substrate type” “surface mount (SMD) lamp”. That is, in the SMD lamp 250A, electrode patterns 272 and 274 are formed on the surface of the substrate 260, and the semiconductor light emitting device 10 or 50 according to the present invention is mounted on one of the electrode patterns 272 and 274. Here, examples of the material of the substrate 260 include resins such as epoxy, ceramics such as alumina and glass, and the like. The electrodes of the semiconductor light emitting element are connected to the electrode pattern 274 by wires 280. The light emitting element is molded and protected by a resin 290.

  Also in the substrate type SMD lamp 250A as shown in FIG. 5, by mounting the semiconductor light emitting element 10 or 50 according to the present invention, various effects as described above with reference to FIG. 3 can be similarly obtained.

FIG. 6 is a schematic cross-sectional view showing the fourth semiconductor light emitting device according to this embodiment. The semiconductor light emitting device 300A shown in the drawing is a so-called “lead frame type” “surface mount (SMD) lamp”. That is, in the SMD lamp 300A, the semiconductor light emitting element 10 or 50 according to the present invention is mounted on the lead frame 310. Here, examples of the material of the lead frame 310 include metal materials such as gold-plated copper.
The electrodes of the semiconductor light emitting device are connected to the electrode terminals of the lead frame 310 by wires 330. The light emitting element is molded and protected by a resin 340.

  Also in the lead frame type SMD lamp 300A as shown in FIG. 6, by mounting the semiconductor light emitting element 10 or 50 according to the present invention, various effects as described above with reference to FIG. 3 can be obtained similarly. it can.

  FIG. 7 is a schematic cross-sectional view showing a fifth semiconductor light emitting device according to this embodiment. The semiconductor light emitting device 350A shown in the figure is a so-called “surface emitting type” semiconductor light emitting device. That is, in the surface emitting device 350A, the semiconductor light emitting element 10 or 50 according to the present invention is mounted on the lead frames 360 and 362, respectively. Each semiconductor light emitting element is connected to the lead frame by wires 380, 380,. Each semiconductor light emitting element is molded with a resin 390 inside the cup portion of the reflector 370.

  The light emitted from each semiconductor light emitting element is reflected by the reflecting plate 370 to become planar light and can be extracted outside.

  Also in the surface-emitting type semiconductor light emitting device 350A as shown in FIG. 7, by mounting the semiconductor light emitting element 10 or 50 according to the present invention, various effects as described above with reference to FIG. 3 can be obtained similarly. .

  FIG. 8 is a schematic cross-sectional view showing a sixth semiconductor light emitting device according to this embodiment. The semiconductor light emitting device 400A shown in the figure is a so-called “dome-shaped” semiconductor light emitting device. That is, in the dome type device 400A, a plurality of, for example, about 5 to 10, semiconductor light emitting elements 10 or 50 according to the present invention are mounted on the lead frame 410 on the circumference. Each semiconductor light emitting element is connected to a predetermined terminal of the lead frame 410 by a wire (not shown). Each semiconductor light emitting element is molded with a sealing resin 440.

  Such a dome-shaped semiconductor light emitting device 400A has an advantage that it has high luminance and can extract uniform light because it has a large number of semiconductor light emitting elements.

  Also in the dome type semiconductor light emitting device 400A as shown in FIG. 8, various effects as described above with reference to FIG. 3 can be obtained in the same manner by mounting the semiconductor light emitting element 10 or 50 according to the present invention.

  FIG. 9 is a schematic diagram showing a seventh semiconductor light emitting device according to this embodiment. That is, the semiconductor light emitting device 450A represented as a plan view in FIG. 5A and a cross-sectional view in FIG. 2B is a so-called “meter pointer type” semiconductor light emitting device. Such a meter pointer type semiconductor light emitting device 450A is used as, for example, a speedometer of an automobile as a self-luminous pointer. In the meter pointer type device 450A according to the present invention, a plurality of, for example, about 5 to 20, semiconductor light emitting elements 10 or 50 according to the present invention are mounted on a predetermined substrate or lead frame 460 at predetermined intervals. Has been. Each semiconductor light emitting element is connected to a predetermined terminal by a wire (not shown). Each semiconductor light emitting element is molded with a sealing resin 490. The meter pointer type device 450A is attached to, for example, a shaft of a speedometer by an attachment flange 466.

  Such a meter pointer type semiconductor light emitting device 450A is small and light, and has a large number of semiconductor light emitting elements. Therefore, the meter pointer type semiconductor light emitting device 450A has an advantage that it has high luminance and can extract uniform light.

  Also in the meter pointer type semiconductor light emitting device 450A as shown in FIG. 9, by mounting the semiconductor light emitting element 10 or 50 according to the present invention, various effects as described above with reference to FIG. 3 can be similarly obtained.

  Further, by arranging semiconductor light emitting elements having different emission colors, it becomes easy to provide a distribution of emission colors on the pointer. Even in such a case, according to the present invention, it is only necessary to change the type of phosphor to be contained in the semiconductor light emitting device to be used, and the semiconductor device can be made of the same material and structure. The voltage also has the advantage that it can be shared.

  FIG. 10 is a schematic view showing an eighth semiconductor light emitting device according to this embodiment. The semiconductor light emitting device 500A shown in the figure is a semiconductor light emitting device referred to as a so-called “7-segment type”, and among these, a device called “substrate type” is particularly shown. The 7-segment light-emitting device is a light-emitting device that displays numbers. FIG. 7A is an overall perspective view and FIG. 7B is a partially transparent perspective view. Further, the “substrate type” includes a “hollow type” shown in a sectional view in FIG. 4C and a “resin-sealed type” shown in a sectional view in FIG. Each type is a type in which the semiconductor light emitting element 10 or 50 is mounted on the substrate 510. In the “hollow type”, the periphery of the semiconductor light emitting element is hollow, and in the “resin sealing type”, the periphery of the semiconductor light emitting element is sealed with a resin 540.

  In any apparatus, the electrode of the semiconductor light emitting element 10 or 50 is connected to a predetermined terminal by a wire 530. In addition, light emitted from the semiconductor light emitting element is reflected by the reflection plate 520 and can be extracted outside. In addition, a color filter 544, a light diffusion film 548, and the like may be provided in the light extraction portion as necessary.

  Also in the 7-segment type semiconductor light emitting device 500A as shown in FIG. 10, by mounting the semiconductor light emitting element 10 or 50 according to the present invention, various effects as described above with reference to FIG. 3 can be similarly obtained.

  FIG. 11 is a schematic view showing a ninth semiconductor light emitting device according to this embodiment. The semiconductor light-emitting device 550A shown in the figure is also a so-called “7-segment type” semiconductor light-emitting device, and particularly shows a cross-section of the main part of what is called a “lead frame type”. is there. That is, the semiconductor light emitting layer 10 or 50 according to the present invention is mounted on the lead frame 560 and predetermined wiring is provided by the wire 580. Further, the semiconductor light emitting element is sealed with a resin 590. The light emitted from the semiconductor light emitting element is reflected by the reflecting plate 570 and can be extracted outside.

  Also in the 7-segment type semiconductor light emitting device 550A as shown in FIG. 11, various effects as described above with reference to FIG. 3 can be similarly obtained by mounting the semiconductor light emitting element 10 or 50 according to the present invention.

FIG. 12 is a schematic view showing a tenth semiconductor light emitting device according to this embodiment. That is, the semiconductor light emitting device 600A represented as a plan view in FIG. 6A and a cross-sectional view in FIG. 5B is a so-called “level meter type” semiconductor light emitting device.
Such a level meter type device 600A is used, for example, as a level meter for displaying the speed of the automobile and the engine speed. In the level meter type device 600A according to the present invention, a plurality of, for example, about 10 to 30 semiconductor light emitting elements 10 or 50 according to the present invention are provided on a predetermined substrate or lead frame 610 fixed to the mounting flange 602. Mounted at a predetermined interval. Here, in many cases, semiconductor light emitting elements having different emission colors are sequentially mounted so that the emission color changes stepwise or continuously according to the position of the light emitting element to be lit. Each semiconductor light emitting element is connected to a predetermined terminal by a wire (not shown). Each semiconductor light emitting element is molded with resin 640.

  Also in the level meter type semiconductor light emitting device 600A as shown in FIG. 12, by mounting the semiconductor light emitting element 10 or 50 according to the present invention, various effects as described above with reference to FIG. 3 can be obtained similarly. .

  Further, in such a level meter type semiconductor light emitting device, it is often necessary to arrange semiconductor light emitting elements having different emission colors, but according to the present invention, the change in the emission color can be achieved by the phosphor contained in the semiconductor light emitting element. Since the semiconductor elements can be made of the same material and structure, the driving current, supply voltage, element size, etc. can be made common.

FIG. 13 is a schematic view showing an eleventh semiconductor light emitting device according to this embodiment. That is, the semiconductor light emitting device 650A represented as a perspective view in FIG. 6A and a cross-sectional view of the main part in FIG. 5B is a so-called “matrix type” semiconductor light emitting device.
In such a matrix type device 650A, as shown in FIG. 5A, the light emitting portions 652 in which the semiconductor light emitting elements are respectively arranged are arranged in a vertical and horizontal matrix, and the kana, numbers, kanji, Symbols or other figures can be displayed.

  In the matrix type light emitting device 650A according to the present invention, as shown in the sectional view of FIG. 13B, the semiconductor light emitting element 10 or 50 according to the present invention is mounted on a substrate 660, and a predetermined terminal is provided by a wire (not shown). It is connected. In addition, the semiconductor light emitting element is sealed with a resin 690. The light emitted from the semiconductor light emitting element is reflected by the reflecting plate 670 and can be extracted outside. Further, a color filter 692 and a light diffusion film 694 can be provided as necessary.

  Also in the matrix type semiconductor light emitting device 650A as shown in FIG. 13, by mounting the semiconductor light emitting element 10 or 50 according to the present invention, various effects as described above with reference to FIG. 3 can be similarly obtained.

  Further, in such a matrix type semiconductor light emitting device, when it is necessary to arrange semiconductor light emitting elements having different emission colors, according to the present invention, the change in the emission color can be achieved by the phosphor contained in the semiconductor light emitting element. It is only necessary to change the type, and the material and structure of the semiconductor element can be made the same. Therefore, there is an advantage that the drive current, supply voltage, element size, etc. can be made common. Further, there is an advantage that there is little color variation between the same colors.

  FIG. 14 is a schematic diagram showing a twelfth semiconductor light emitting device according to this embodiment. A semiconductor light emitting device 700A shown as an assembly diagram in the drawing is a so-called “array type” semiconductor light emitting device, and is used for a light source unit such as a fax machine or a scanner. In such an array-type device 700A, a rail-like reflector 722 is provided on a substrate 720, and the semiconductor light emitting elements 10 or 50 according to the present invention are arranged in a straight line therebetween. A partition plate 724 is provided between the semiconductor light emitting elements. In addition, a rod lens 740 is disposed on the light emitting element so that light from each light emitting element can be condensed and extracted to the outside.

  Also in the array type semiconductor light emitting device 700A as shown in FIG. 14, by mounting the semiconductor light emitting element 10 or 50 according to the present invention, various effects as described above with reference to FIG. 3 can be similarly obtained. In addition, there is an advantage that there is little variation in color between the same colors.

  Further, in such an array type semiconductor light emitting device, when it is necessary to arrange semiconductor light emitting elements having different emission colors, according to the present invention, the emission color can be changed by changing the phosphor contained in the semiconductor light emitting element. It is only necessary to change the type, and the material and structure of the semiconductor element can be made the same. Therefore, there is an advantage that the drive current, supply voltage, element size, etc. can be made common.

  FIG. 15 is a schematic diagram showing a thirteenth semiconductor light emitting device according to this embodiment. The semiconductor light emitting device 750A shown as a cross-sectional view in the drawing is a semiconductor light emitting device called a “can-type laser”. In such a can type laser 750A, the semiconductor light emitting device 10 or 50 according to the present invention is linearly arranged at the tip of the stem 770. Here, the semiconductor light emitting element 10 or 50 is a laser element. A light receiving element 775 for monitoring is arranged on the back side of the semiconductor light emitting element so that the optical output of the semiconductor light emitting element 10 or 50 can be monitored. The head of the stem 770 is sealed with a can 790 so that the laser light can be extracted to the outside through an extraction window 792.

  Also in the can type laser semiconductor light emitting device 750A as shown in FIG. 15, by mounting the semiconductor light emitting element 10 or 50 according to the present invention, various effects as described above with reference to FIG. 3 can be similarly obtained.

As described above, specific examples of the semiconductor light-emitting element that appropriately contains the phosphor as the first embodiment of the present invention and the semiconductor light-emitting device equipped with such a semiconductor light-emitting element as the second embodiment of the present invention, respectively. This has been described with reference to examples.
Next, a third embodiment of the present invention will be described.
In the present embodiment, after mounting the semiconductor light emitting element on the mounting member, the fluorescent material is deposited by a predetermined method.
FIG. 16 is a schematic view illustrating the semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 100B in the figure is a lead frame type LED lamp. In the present embodiment, the semiconductor light emitting device 990 is mounted on the lead frame 110, and then a fluorescent material is deposited on the surface of the semiconductor light emitting device 990 to form the phosphor layer FL.

  Here, the semiconductor light emitting device 990 need not contain a fluorescent material. However, in order to obtain high wavelength conversion efficiency in many fluorescent materials that are usually obtained, it is desirable that the semiconductor light emitting device has high luminance in the blue region or in the ultraviolet region having a shorter wavelength. Examples of such a semiconductor light emitting device include a light emitting device using a semiconductor material such as a GaN-based material, a ZnSe-based material, a SiC-based material, a ZnS-based material, or a BN-based material as described with reference to FIGS. be able to.

  As a method of depositing the fluorescent substance, a phosphor is dispersed in a predetermined solvent, applied to the surface of the semiconductor light emitting element 990 and dried, and after a predetermined solvent is applied to the surface of the semiconductor light emitting element 990, There is a method of drying by spraying or spraying a phosphor.

  As the solvent, those having adhesiveness or tackiness are desirable. Specifically, for example, those having an inorganic polymer as a main component, those having a rubber-based organic substance as a main component, or those having a starch or protein as a main component can be mentioned. Here, when an inorganic solvent is used, it is advantageous in that heat resistance and chemical resistance are high and nonflammability is obtained. In addition, when rubber, starch or protein is used, the stress after drying is relaxed, and it is advantageous in that it can prevent defects such as element degradation and wire breakage due to residual stress of the solvent. It is. In addition, starch and protein have an advantage that they are easy to handle in terms of water solubility.

  Specific examples of the solvent include an alkali silicate aqueous solution, a silicate colloidal chair solution, a phosphate aqueous solution, a silicate compound-dissolving organic solvent, a rubber-containing organic solvent, and a natural glue aqueous solution.

  Further, it is desirable that these solvents have a light refractive index after drying and solidifying that has a value between the light refractive index of the light emitting portion of the semiconductor light emitting element and the light refractive index outside thereof. For example, when the semiconductor light emitting element is sealed with resin, the light refractive index of the solidified solvent is a value between the light refractive index of the light emitting portion of the semiconductor light emitting element and the light refractive index of the resin. It is desirable to do so. This is because the extraction efficiency can be improved by preventing total reflection at the light extraction portion.

  On the other hand, as the fluorescent substance used in the present embodiment, various inorganic phosphors and organic phosphors as described in the first embodiment can be appropriately selected and used. In the selection, it is desirable to select a fluorescent material having high wavelength conversion efficiency in relation to the emission wavelength of the semiconductor light emitting element to be used and the desired wavelength of extracted light.

  According to the present embodiment, the phosphor layer FL is deposited on the light emitting portion of the semiconductor light emitting device 990 as described above. Therefore, the light emitted from the light emitting device is absorbed by the fluorescent material with an efficiency close to 100%, and wavelength conversion is performed. can do. In particular, it is effective when the light emission wavelength of the light emitting element is ultraviolet light of 380 nm or less.

In the present embodiment, the light source is limited to the vicinity of the light emitting portion of the light emitting element.
Therefore, the optical path through which the light from the light emitting element passes through the phosphor layer FL is substantially constant regardless of the direction of the light, and the conversion efficiency is uniform. As a result, the problem that the wavelength of light extracted from the light emitting device changes depending on the direction is solved.

  In the present embodiment, since the light source is limited to the vicinity of the light emitting portion of the light emitting element, it is easy to collect light using a lens, a reflecting plate, etc., and a semiconductor light emitting device with high luminance can be realized. In particular, by using an inorganic polymer or rubber, starch, or protein-based solvent that has a large deposition shrinkage ratio when cured as a solvent for dispersing the fluorescent material, the phosphor layer FL is placed near the light emitting portion of the semiconductor light emitting device. It becomes easy to limit only to this, and the effect of this embodiment can further be improved.

  Furthermore, in this embodiment, by selecting the optical refractive index of the solvent to be a value between the semiconductor light emitting device and its adjacent material, the light extraction efficiency from the semiconductor light emitting device is further improved, A high-power semiconductor light emitting device can be provided.

  Hereinafter, specific examples of the semiconductor light emitting device according to this embodiment will be described with reference to the drawings. In the specific examples described below, the same portions as those described above are denoted by the same reference numerals, and description thereof is omitted.

  FIG. 17 is a schematic view showing a second semiconductor light emitting device according to this embodiment. The semiconductor light emitting device 200B shown as a cross-sectional view in the drawing is a so-called stem type LED lamp. In the present embodiment, the semiconductor light emitting device 990 is mounted on the stem 210, and the fluorescent material layer FL is deposited thereon by any one of the methods described above. Here, when the phosphor layer FL is deposited, the phosphor material may be dispersed in a solvent in advance or may be sprayed later.

  FIG. 18 is a schematic diagram showing a third semiconductor light emitting device according to this embodiment. The semiconductor light emitting device 250B shown as a cross-sectional view in the drawing is a so-called substrate type SMD lamp. In the present embodiment, the semiconductor light emitting device 990 is mounted on the substrate 260, and the fluorescent material layer FL is deposited thereon by any one of the methods described above.

  FIG. 19 is a schematic view showing a fourth semiconductor light emitting device according to this embodiment. The semiconductor light emitting device 300B shown as a cross-sectional view in the drawing is a so-called lead frame type SMD lamp. In the present embodiment, the semiconductor light emitting device 990 is mounted on the lead frame 310, and the fluorescent material layer FL is deposited thereon by any one of the methods described above.

  FIG. 20 is a schematic diagram showing a fifth semiconductor light emitting device according to this embodiment. A semiconductor light emitting device 350B shown as a cross-sectional view in the drawing is a so-called surface-emitting type semiconductor light emitting device. In this embodiment, the semiconductor light emitting device 990 is mounted on the stems 360 and 362, and the fluorescent material layer FL is deposited thereon by any one of the methods described above.

  FIG. 21 is a schematic view showing a sixth semiconductor light emitting device according to this embodiment. The semiconductor light emitting device 400B shown as a cross-sectional view in the drawing is a so-called dome-shaped semiconductor light emitting device. In the present embodiment, a plurality of semiconductor light emitting elements 990 are mounted on the stem 410, and the fluorescent material layer FL is deposited thereon by any one of the methods described above.

  FIG. 22 is a schematic view showing a seventh semiconductor light emitting device according to this embodiment. The semiconductor light emitting device 450B shown as a cross-sectional view in the drawing is a so-called meter pointer type semiconductor light emitting device. In the present embodiment, a plurality of semiconductor light emitting devices 990 are mounted on a substrate or lead frame 460, and a fluorescent material layer FL is deposited thereon by any one of the methods described above.

  FIG. 23 is a schematic view showing an eighth semiconductor light emitting device according to this embodiment. The semiconductor light emitting device 500B shown as a sectional view in the figure is a so-called substrate type 7 segment type semiconductor light emitting device, in which (a) is a “hollow type” and (b) is a “resin-encapsulated type”. Represents. In the present embodiment, the semiconductor light emitting device 990 is mounted on the substrate 510, and the fluorescent material layer FL is deposited thereon by any one of the methods described above.

  FIG. 24 is a schematic view showing a ninth semiconductor light emitting device according to this embodiment. The semiconductor light emitting device 550B shown as a cross-sectional view in the drawing is a so-called lead frame type 7 segment type semiconductor light emitting device. In the present embodiment, the semiconductor light emitting device 990 is mounted on the lead frame 560, and the fluorescent material layer FL is deposited thereon by any one of the methods described above.

  FIG. 25 is a schematic view showing a tenth semiconductor light emitting device according to this embodiment. The semiconductor light emitting device 650B shown as a cross-sectional view in the drawing is a so-called matrix type semiconductor light emitting device. In the present embodiment, a plurality of semiconductor light emitting elements 990 are mounted on the substrate 660, and the fluorescent material layer FL is deposited thereon by any one of the methods described above.

  FIG. 26 is a schematic diagram showing an eleventh semiconductor light emitting device according to this embodiment. The semiconductor light emitting device 750B shown as a cross-sectional view in the drawing is a semiconductor light emitting device as a so-called can type laser. In this embodiment, a semiconductor light emitting device 990 as a laser is mounted on the tip of the stem 770, and the fluorescent material layer FL is deposited thereon by any one of the methods described above.

  The specific example of the third embodiment of the present invention has been described above with reference to FIGS. In any of the specific examples described above, the various effects described above with reference to FIG. 16 can be similarly obtained.

Next, a fourth embodiment of the present invention will be described.
In the present embodiment, a semiconductor light-emitting device capable of wavelength conversion with high efficiency is provided by appropriately arranging a fluorescent material in a resin portion of the semiconductor light-emitting device.

  FIG. 27 is a schematic view illustrating the semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 250C shown as a cross-sectional view in the drawing is a so-called substrate type SMD lamp. And in the example shown to Fig.7 (a), the fluorescent material is mixed with the whole sealing resin 290. FIG.

  In the example shown in FIG. 5B, a layer 290A in which a fluorescent substance is mixed at a particularly high concentration is formed near the surface layer of the sealing resin 290. As described above, as a method of mixing the fluorescent substance in the vicinity of the surface layer of the resin at a high concentration, for example, when the semiconductor light emitting device 990 is sealed using a resin containing the fluorescent substance, the resin is cured. In the meantime, there can be mentioned a method of precipitating the fluorescent material to form a layer containing the fluorescent material in a high concentration in the vicinity of the surface layer. At this time, the distribution state of the fluorescent substance can be adjusted depending on the degree of precipitation of the fluorescent substance. That is, if it is completely precipitated, a configuration similar to that in which a fluorescent material is applied to the surface portion of the resin as described below can be obtained.

  Next, in the example shown in FIG. 7C, the fluorescent material-containing layer 290B is uniformly provided around the sealing resin 290. As a method for forming such a fluorescent material-containing layer 290B, for example, after molding the periphery of the semiconductor light emitting element 990 with a resin not containing a fluorescent material, a resin containing a fluorescent material is applied to the periphery, or The method of carrying out lamination molding can be mentioned.

  Here, in any of the examples described above, the semiconductor light emitting device 990 need not contain a fluorescent material. However, in order to obtain a high wavelength conversion efficiency using many fluorescent substances that are usually obtained, it is desirable that the semiconductor light emitting device has a high luminance in the blue or ultraviolet region having a shorter wavelength. Examples of such a semiconductor light emitting device include a light emitting device using a semiconductor material such as a GaN-based material, a ZnSe-based material, a SiC-based material, a ZnS-based material, or a BN-based material as described with reference to FIGS. be able to.

  On the other hand, as the fluorescent substance used in the present embodiment, various inorganic phosphors and organic phosphors as described in the first embodiment can be appropriately selected and used. In the selection, it is desirable to select a fluorescent material having high wavelength conversion efficiency in relation to the emission wavelength of the semiconductor light emitting element to be used and the desired wavelength of extracted light.

  In the present embodiment, since the phosphor of the semiconductor light emitting device is made to contain a fluorescent material by a predetermined method, light emission can be multicolored, variation in the emission wavelength is suppressed, and shift in the emission wavelength due to heat generation is suppressed. You can also do that.

  In addition, by using an ultraviolet light emitting element having a light emission wavelength of 380 nm or less that is most efficient for a GaN-based material, an extremely high efficiency semiconductor light emitting device can be realized.

  In particular, according to the present embodiment, a white light emitting SMD lamp that is very small and easy to mount can be realized. In the conventional SMD lamp, in order to improve the appearance, it is necessary to improve the uniformity of light emission by mixing a light scattering agent or the like into the sealing resin separately. However, there is a drawback that the luminance is lowered by the light absorption of such a light scattering agent. On the other hand, according to the present embodiment, the fluorescent material to be mixed also serves as a light scattering agent, so that a bright and attractive SMD lamp can be realized.

  In the example shown in FIGS. 27B and 27C, the fluorescent substance can be distributed at a high concentration near the surface of the resin. Therefore, the wavelength of light from the light emitting element 990 can be uniformly and efficiently converted.

  Hereinafter, specific examples of the semiconductor light emitting device according to this embodiment will be described with reference to the drawings. In the specific examples described below, the same portions as those described above are denoted by the same reference numerals, and description thereof is omitted.

FIG. 28 is a schematic view illustrating the second semiconductor light emitting device according to this embodiment.
That is, the semiconductor light emitting device 300C shown as a cross-sectional view in the drawing is a so-called lead frame type SMD lamp. And in the example shown to the same figure (a), the fluorescent substance is mixed with the whole sealing resin 340. FIG. In the example shown in FIG. 5B, a layer 340A in which a fluorescent substance is mixed at a particularly high concentration is formed near the surface layer of the sealing resin 340. As described above, as a method of mixing the fluorescent substance in the vicinity of the surface layer of the resin at a high concentration, for example, when the semiconductor light emitting device 990 is sealed using a resin containing the fluorescent substance, the resin is cured. In the meantime, there can be mentioned a method of precipitating the fluorescent material to form a layer containing the fluorescent material in a high concentration in the vicinity of the surface layer.

  Next, in the example shown in FIG. 5C, the fluorescent material-containing layer 340B is uniformly provided around the sealing resin 340. As a method for forming such a fluorescent material-containing layer 340B, for example, after the periphery of the semiconductor light emitting element 990 is molded with a resin not containing a fluorescent material, a resin containing the fluorescent material is applied to the periphery, or The method of carrying out lamination molding can be mentioned. Further, as described above with reference to FIG. 4B, when the fluorescent material is completely precipitated when formed, the same configuration as that applied to the resin surface can be obtained.

FIG. 29 is a schematic view illustrating the third semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 350C shown as a cross-sectional view in the drawing is a so-called surface light emitting type semiconductor light emitting device. And in the example shown to Fig.7 (a), the fluorescent substance is mixed with the whole sealing resin 390. FIG. In the example shown in FIG. 5B, a layer 390A in which a fluorescent substance is mixed at a particularly high concentration is formed in the vicinity of the surface layer of the sealing resin 390. Next, in the example shown in FIG. 5C, the fluorescent material-containing layer 390B is uniformly provided around the sealing resin 390. The mixing method of each fluorescent substance can be the same as the method described above with reference to FIG.
According to the present embodiment, it is possible to realize a surface emitting semiconductor light emitting device that emits white light that is much brighter and more uniform than conventional ones.

FIG. 30 is a schematic view illustrating the fourth semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 400C shown as a cross-sectional view in the drawing is a so-called dome type semiconductor light emitting device. And in the example shown to Fig.7 (a), the fluorescent material is mixed with the whole sealing resin 440. FIG. In the example shown in FIG. 5B, a layer 440A in which a fluorescent substance is mixed at a particularly high concentration is formed near the surface layer of the sealing resin 440. Next, in the example shown in FIG. 7C, the fluorescent material-containing layer 440B is uniformly provided around the sealing resin 440. The mixing method of each fluorescent substance can be the same as the method described above with reference to FIG.
According to this embodiment, it is possible to realize a dome-shaped semiconductor light-emitting device that emits white light that is much brighter and more uniform than conventional ones.

FIG. 31 is a schematic view illustrating the fifth semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 450C shown as a cross-sectional view in the drawing is a so-called meter pointer type semiconductor light emitting device. And in the example shown to Fig.9 (a), the fluorescent material is mixed with the whole sealing resin 490. FIG. In the example shown in FIG. 5B, a layer 490A in which a fluorescent substance is mixed at a particularly high concentration is formed near the surface layer of the sealing resin 490. Next, in the example shown in FIG. 7C, the fluorescent material-containing layer 490B is uniformly provided around the sealing resin 490. The mixing method of each fluorescent substance can be the same as the method described above with reference to FIG. According to the present embodiment, it is possible to realize a meter pointer type semiconductor light emitting device that emits white light that is much brighter and more uniform than the conventional one. In particular, when used as a pointer when the background is a black panel, such as for in-vehicle use, the contrast is higher than that of red or blue, and it is optimal for use at night.

FIG. 32 is a schematic view illustrating the sixth semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 500C shown as a cross-sectional view in the drawing is a so-called substrate type 7-segment semiconductor light emitting device. And in the example shown to the same figure (a), the fluorescent material is mixed with the whole sealing resin 540. FIG. In the example shown in FIG. 5B, a layer 540A in which a fluorescent substance is mixed at a particularly high concentration is formed near the surface layer of the sealing resin 540. Next, in the example shown in FIG. 7C, the fluorescent material-containing layer 540B is uniformly provided around the sealing resin 540. The mixing method of each fluorescent substance can be the same as the method described above with reference to FIG. According to this embodiment, it is possible to realize a 7-segment semiconductor light-emitting device that emits white light that is far brighter and more excellent in uniformity than conventional ones.

FIG. 33 is a schematic view illustrating the seventh semiconductor light emitting device according to the present embodiment.
In other words, the semiconductor light emitting device 550C shown as a cross-sectional view in the drawing is a so-called lead frame type 7-segment semiconductor light emitting device. And in the example shown to Fig.7 (a), the fluorescent material is mixed with the whole sealing resin 590. FIG. In the example shown in FIG. 5B, a layer 590A in which a fluorescent substance is mixed at a particularly high concentration is formed in the vicinity of the surface layer of the sealing resin 590. Next, in the example shown in FIG. 7C, the fluorescent material-containing layer 590B is uniformly provided around the sealing resin 590. The mixing method of each fluorescent substance can be the same as the method described above with reference to FIG. According to this embodiment, it is possible to realize a 7-segment semiconductor light-emitting device that emits white light that is far brighter and more excellent in uniformity than conventional ones. Furthermore, according to this embodiment, since light emission is obtained near the surface of the light emitting device, there is an advantage that a wide viewing angle can be secured.

FIG. 34 is a schematic view illustrating the eighth semiconductor light emitting device according to the present embodiment.
In other words, the semiconductor light emitting device 650C shown as a cross-sectional view in the drawing is a so-called matrix type semiconductor light emitting device. And in the example shown to Fig.9 (a), the fluorescent substance is mixed with the whole sealing resin 690. FIG. In the example shown in FIG. 5B, a layer 690A in which a fluorescent substance is mixed at a particularly high concentration is formed near the surface layer of the sealing resin 690. Next, in the example shown in FIG. 7C, the fluorescent material-containing layer 690B is uniformly provided around the sealing resin 690. The mixing method of each fluorescent substance can be the same as the method described above with reference to FIG. According to the present embodiment, it is possible to realize a white light emitting dot-matrix type semiconductor light emitting device that is much brighter and more uniform than the prior art. Further, when full-color image display for forming RGB pixels is performed, for example, only one type of light emitting element that emits ultraviolet light can be used, and the light emitting elements can be distributed to RGB pixels depending on the type of fluorescent substance. The assembly process can be simplified by simplifying the configuration. Further, when semiconductor light emitting elements are mounted at a high density, the amount of heat generation increases, but even in such a case, there is an advantage that the emission wavelength does not fluctuate because the conversion characteristics of the phosphor are stable. Furthermore, according to this embodiment, since light emission is obtained near the surface of the light emitting device, there is an advantage that a wide viewing angle can be secured.

  The specific example of the fourth embodiment of the present invention has been described above with reference to FIGS. In any of the specific examples described above, the various effects described above with reference to FIG. 27 can be similarly obtained.

Next, a fifth embodiment of the present invention will be described.
In the present embodiment, by providing a cavity inside the sealing resin of the semiconductor light emitting device and arranging a fluorescent material on the inner wall surface thereof, it is possible to stabilize the wavelength conversion efficiency and realize a high brightness semiconductor light emitting device. it can.

  FIG. 35 is a schematic view illustrating the semiconductor light emitting device according to this embodiment. That is, the semiconductor light emitting device 100D shown as a cross-sectional view in the drawing is a so-called lead frame type LED lamp. The semiconductor light emitting device 990 is mounted on the lead frame 110 and sealed with a resin 140D. Here, in the present embodiment, a cavity 142 is formed inside the resin 140D, and a fluorescent material deposition layer FL is provided on the inner wall surface of the cavity 142.

  Here, the semiconductor light emitting device 990 does not need to contain a fluorescent material. However, in order to obtain high wavelength conversion efficiency in many fluorescent materials that are usually obtained, it is desirable that the semiconductor light emitting device has high luminance in the blue region or in the ultraviolet region having a shorter wavelength. Examples of such a semiconductor light emitting device include a light emitting device using a semiconductor material such as a GaN-based material, a ZnSe-based material, a SiC-based material, a ZnS-based material, or a BN-based material as described with reference to FIGS. be able to.

  In addition, as the fluorescent substance used in the present embodiment, various inorganic phosphors and organic phosphors as described in the first embodiment can be appropriately selected and used. In the selection, it is desirable to select a fluorescent material having high wavelength conversion efficiency in relation to the emission wavelength of the semiconductor light emitting element to be used and the desired wavelength of extracted light. In addition, it is desirable to select one that is effectively excited by light having a wavelength other than the visible light region. This is because when a fluorescent material excited by visible light is used, so-called “color mixing” occurs when semiconductor light emitting devices are arranged in parallel. That is, the fluorescent material of the semiconductor light emitting device is excited by receiving visible light from an adjacent light emitting device, and may cause unnecessary light emission.

  According to the present embodiment, the phosphor layer FL can be uniformly deposited around the semiconductor light emitting device 990 as described above, so that light emitted from the light emitting device is absorbed by the fluorescent material with an efficiency close to 100%. Wavelength conversion. In particular, it is effective when the light emission wavelength of the light emitting element is ultraviolet light of 380 nm or less.

  Further, according to the present embodiment, the light from the semiconductor light emitting device 990 is converted in wavelength by the phosphor layer FL and extracted outside, so that the uniformity of the emission wavelength is very good. That is, the emission wavelength of the phosphor is constant without depending on the intensity and wavelength of the excitation light, and therefore the emission wavelength of the semiconductor light emitting device is stable even when the characteristics of the semiconductor light emitting element vary. For the same reason, it is also possible to suppress variations in the emission wavelength depending on the drive current and applied voltage.

  In the present embodiment, the light source is limited to the vicinity of the light emitting element. Therefore, the optical path through which the light from the light emitting element passes through the phosphor layer FL is substantially constant regardless of the direction of the light, and the conversion efficiency is uniform. As a result, the problem that the wavelength of light extracted from the light emitting device changes depending on the direction is solved.

In the present embodiment, since the light source can be limited to the vicinity of the light emitting element, the light condensing property due to the lens effect is improved, and the light emission intensity can be increased.
Such an improvement in light emission intensity is particularly effective for application fields such as traffic lights and outdoor displays. Further, when the cavity 142 in the resin is made larger, the apparent light source becomes larger, so the uniformity is improved and the appearance is improved, which is particularly effective for applications such as indicator lamps.

  Moreover, according to this embodiment, the lifetime of a light-emitting device can be extended and manufacturing cost can also be reduced. Furthermore, by utilizing light in the ultraviolet region as an excitation light source, “color mixing” occurring in the visible light region can be eliminated.

  Hereinafter, specific examples of the semiconductor light emitting device according to this embodiment will be described with reference to the drawings. In the specific examples described below, the same portions as those described above are denoted by the same reference numerals, and description thereof is omitted.

FIG. 36 is a schematic view illustrating the second semiconductor light emitting device according to the present embodiment.
In other words, the semiconductor light emitting device 200D shown as a cross-sectional view in the drawing is a so-called stem type LED lamp. A cavity 242 is formed inside the resin 240D, and a fluorescent material deposition layer FL is provided on the inner wall surface of the cavity 242.

FIG. 37 is a schematic view illustrating the third semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 250D shown as a cross-sectional view in the drawing is a so-called substrate type SMD lamp. A cavity 292 is formed inside the resin 290D, and a fluorescent material deposition layer FL is provided on the inner wall surface of the cavity 292.

FIG. 38 is a schematic view illustrating the fourth semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 350D shown as a cross-sectional view in the drawing is a so-called surface light emitting type semiconductor light emitting device. A cavity 392 is formed inside the resin 390D, and a fluorescent material deposition layer FL is provided on the inner wall surface of the cavity 392.

FIG. 39 is a schematic view illustrating the fifth semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 400D shown as a cross-sectional view in the drawing is a so-called dome-shaped semiconductor light emitting device. A cavity 442 is formed inside the resin 440D, and a fluorescent material deposition layer FL is provided on the inner wall surface of the cavity 442.

FIG. 40 is a schematic view illustrating the sixth semiconductor light emitting device according to this embodiment.
That is, the semiconductor light emitting device 500D shown as a cross-sectional view in the drawing is a so-called substrate type 7-segment semiconductor light emitting device. A cavity 542 is formed inside the resin 540D, and a fluorescent material deposition layer FL is provided on the inner wall surface of the cavity 542.

  The specific example of the fifth embodiment of the present invention has been described above with reference to FIGS. In any of the specific examples described above, the various effects described above with reference to FIG. 35 can be obtained similarly.

Next, a sixth embodiment of the present invention will be described.
In this embodiment, by providing a dipping resin layer inside the sealing resin of the semiconductor light emitting device and incorporating a fluorescent substance in the dipping resin layer, the wavelength conversion efficiency is stabilized and a high luminance semiconductor light emitting device is realized. can do.

  FIG. 41 is a schematic view illustrating the semiconductor light emitting device according to this embodiment. That is, the semiconductor light emitting device 100E shown as a cross-sectional view in the drawing is a so-called lead frame type LED lamp. The semiconductor light emitting device 990 is mounted on the lead frame 110 and sealed with a resin 140E. Here, in this embodiment, a dipping resin layer 142E is formed inside the resin 140E, and the dipping resin layer 142E contains a fluorescent substance. Here, “dipping resin” means that a resin material dissolved in a solvent is dropped by a dispenser or the like, or an element is dipped into a solution of such a resin material so that a “mold mold” is not used. Refers to the resin formed. That is, in this embodiment, first, the periphery of the semiconductor light emitting device 990 is sealed with the dipping resin 142E containing a fluorescent material, and then the sealing resin 140E is molded.

  Here, the semiconductor light emitting device 990 does not need to contain a fluorescent material. However, in order to obtain high wavelength conversion efficiency in many fluorescent materials that are usually obtained, it is desirable that the semiconductor light emitting device has high luminance in the blue region or in the ultraviolet region having a shorter wavelength. Examples of such a semiconductor light emitting device include a light emitting device using a semiconductor material such as a GaN-based material, a ZnSe-based material, a SiC-based material, a ZnS-based material, or a BN-based material as described with reference to FIGS. be able to.

  In addition, as the fluorescent substance used in the present embodiment, various inorganic phosphors and organic phosphors as described in the first embodiment can be appropriately selected and used. In the selection, it is desirable to select a fluorescent material having high wavelength conversion efficiency in relation to the emission wavelength of the semiconductor light emitting element to be used and the desired wavelength of extracted light. In addition, it is desirable to select one that is effectively excited by light having a wavelength other than the visible light region. This is because when a fluorescent material excited by visible light is used, so-called “color mixing” occurs when semiconductor light emitting devices are arranged in parallel. That is, the fluorescent material of the semiconductor light emitting device is excited by receiving visible light from an adjacent light emitting device, and may cause unnecessary light emission.

  According to the present embodiment, the phosphor layer FL can be uniformly deposited around the semiconductor light emitting device 990 as described above, so that light emitted from the light emitting device is absorbed by the fluorescent material with an efficiency close to 100%. Wavelength conversion. In particular, it is effective when the light emission wavelength of the light emitting element is ultraviolet light of 380 nm or less.

  Further, according to the present embodiment, the light from the semiconductor light emitting device 990 is converted in wavelength by the phosphor layer FL and extracted outside, so that the uniformity of the emission wavelength is very good. That is, the emission wavelength of the phosphor is constant without depending on the intensity and wavelength of the excitation light, and therefore the emission wavelength of the semiconductor light emitting device is stable even when the characteristics of the semiconductor light emitting element vary. For the same reason, it is also possible to suppress variations in the emission wavelength depending on the drive current and applied voltage.

  In the present embodiment, the light source is limited to the vicinity of the light emitting element. Therefore, the optical path through which the light from the light emitting element passes through the phosphor layer FL is substantially constant regardless of the direction of the light, and the conversion efficiency is uniform. As a result, the problem that the wavelength of light extracted from the light emitting device changes depending on the direction is solved.

Further, in the present embodiment, since the light source can be limited to the vicinity of the light emitting element, the light condensing property by the lens effect is improved, and the light emission intensity can be increased.
Such an improvement in light emission intensity is particularly effective for application fields such as traffic lights and outdoor displays. Further, when the cavity 142 in the resin is made larger, the apparent light source becomes larger, so the uniformity is improved and the appearance is improved, which is particularly effective for applications such as indicator lamps.

  Moreover, according to this embodiment, the lifetime of a light-emitting device can be extended and manufacturing cost can also be reduced. Furthermore, by utilizing light in the ultraviolet region as an excitation light source, “color mixing” occurring in the visible light region can be eliminated.

  Hereinafter, specific examples of the semiconductor light emitting device according to this embodiment will be described with reference to the drawings. In the specific examples described below, the same portions as those described above are denoted by the same reference numerals, and description thereof is omitted.

FIG. 42 is a schematic view illustrating the second semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 200E shown as a cross-sectional view in the drawing is a so-called stem type LED lamp. A dipping resin layer 242E is formed inside the resin 240E, and the dipping resin layer 242E contains a fluorescent substance.

FIG. 43 is a schematic view illustrating the third semiconductor light emitting device according to the present embodiment.
In other words, the semiconductor light emitting device 250E shown as a cross-sectional view in the drawing is a so-called substrate type SMD lamp. A dipping resin layer 292E is formed inside the resin 290E, and the dipping resin layer 292E contains a fluorescent substance.

FIG. 44 is a schematic view illustrating the fourth semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 350E shown as a cross-sectional view in the drawing is a so-called surface light emitting type semiconductor light emitting device. A dipping resin layer 392E is formed inside the resin 390E, and the dipping resin layer 392E contains a fluorescent substance.

FIG. 45 is a schematic view illustrating the fifth semiconductor light emitting device according to the present embodiment.
In other words, the semiconductor light emitting device 400E shown as a cross-sectional view in the drawing is a so-called dome-shaped semiconductor light emitting device. A dipping resin layer 442E is formed inside the resin 440E, and the dipping resin layer 442E contains a fluorescent substance.

FIG. 46 is a schematic view illustrating the sixth semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 500E shown as a cross-sectional view in the drawing is a so-called substrate type 7-segment semiconductor light emitting device. A dipping resin layer 542E is formed inside the resin 540E, and the dipping resin layer 542E contains a fluorescent substance.

  The specific example of the sixth embodiment of the present invention has been described above with reference to FIGS. In any of the specific examples described above, the various effects described above with reference to FIG. 41 can be obtained similarly.

Next, a seventh embodiment of the present invention will be described.
In the present embodiment, a high-brightness semiconductor light-emitting device is provided by providing a dipping resin layer inside the sealing resin of the semiconductor light-emitting device and applying a fluorescent material to the surface of the dipping resin layer to stabilize the wavelength conversion efficiency and Can be realized.

  FIG. 47 is a schematic view illustrating the semiconductor light emitting device according to this embodiment. That is, the semiconductor light emitting device 100F shown as a cross-sectional view in the drawing is a so-called lead frame type LED lamp. The semiconductor light emitting device 990 is mounted on the lead frame 110 and sealed with a resin 140F. Here, in this embodiment, the dipping resin layer 142F is formed inside the resin 140F, and the fluorescent material FL is applied to the surface of the dipping resin layer 142F. That is, in this embodiment, first, the periphery of the semiconductor light emitting device 990 is sealed with the dipping resin 142F containing the fluorescent material, and then the fluorescent material FL is applied to the surface of the dipping resin 142F, and further sealed. A stop resin 140F is molded.

  The application of the fluorescent material can be performed by a method similar to the method described above with reference to FIG. In other words, the fluorescent material layer FL can be formed by dispersing the fluorescent material in the solvent and applying it, or by applying or spraying the fluorescent material after applying the solvent. As described above, the solvent is preferably a solvent having adhesiveness or tackiness. Specifically, for example, those having an inorganic polymer as a main component, those having a rubber-based organic substance as a main component, or those having a starch or protein as a main component can be mentioned. More specifically, for example, an alkali silicate aqueous solution, a silicate colloidal chair solution, a phosphate aqueous solution, a silicate compound-dissolving organic solvent, a rubber-containing organic solvent, a natural glue aqueous solution, and the like can be given.

  Also in the present embodiment, the semiconductor light emitting device 990 does not need to contain a fluorescent material. However, in order to obtain high wavelength conversion efficiency in many fluorescent materials that are usually obtained, it is desirable that the semiconductor light emitting device has high luminance in the blue region or in the ultraviolet region having a shorter wavelength. Examples of such a semiconductor light emitting device include a light emitting device using a semiconductor material such as a GaN-based material, a ZnSe-based material, a SiC-based material, a ZnS-based material, or a BN-based material as described with reference to FIGS. be able to.

  Also in the present embodiment, various inorganic phosphors and organic phosphors as described in the first embodiment can be appropriately selected and used as the phosphor material to be used. In the selection, it is desirable to select a fluorescent material having high wavelength conversion efficiency in relation to the emission wavelength of the semiconductor light emitting element to be used and the desired wavelength of extracted light. In addition, it is desirable to select one that is effectively excited by light having a wavelength other than the visible light region. This is because when a fluorescent material excited by visible light is used, so-called “color mixing” occurs when semiconductor light emitting devices are arranged in parallel. That is, the fluorescent material of the semiconductor light emitting device is excited by receiving visible light from an adjacent light emitting device, and may cause unnecessary light emission.

  According to this embodiment, since it is not necessary to contain the fluorescent substance in the dipping resin, it is possible to eliminate the deterioration of the resin due to the mixing of the fluorescent substance. Further, since the phosphor layer FL can be uniformly deposited around the semiconductor light emitting device 990, light emitted from the light emitting device can be absorbed by the fluorescent material with an efficiency close to 100% and wavelength conversion can be performed. In particular, it is effective when the light emission wavelength of the light emitting element is ultraviolet light of 380 nm or less.

  Further, according to the present embodiment, the light from the semiconductor light emitting device 990 is converted in wavelength by the phosphor layer FL and extracted outside, so that the uniformity of the emission wavelength is very good. That is, the emission wavelength of the phosphor is constant without depending on the intensity and wavelength of the excitation light, and therefore the emission wavelength of the semiconductor light emitting device is stable even when the characteristics of the semiconductor light emitting element vary. For the same reason, it is also possible to suppress variations in the emission wavelength depending on the drive current and applied voltage.

  In the present embodiment, the light source is limited to the vicinity of the light emitting element. Therefore, the optical path through which the light from the light emitting element passes through the phosphor layer FL is substantially constant regardless of the direction of the light, and the conversion efficiency is uniform. As a result, the problem that the wavelength of light extracted from the light emitting device changes depending on the direction is solved.

Further, in the present embodiment, since the light source can be limited to the vicinity of the light emitting element, the light condensing property by the lens effect is improved, and the light emission intensity can be increased.
Such an improvement in light emission intensity is particularly effective for application fields such as traffic lights and outdoor displays. Further, when the cavity 142 in the resin is made larger, the apparent light source becomes larger, so the uniformity is improved and the appearance is improved, which is particularly effective for applications such as indicator lamps.

  Moreover, according to this embodiment, the lifetime of a light-emitting device can be extended and manufacturing cost can also be reduced. Furthermore, by utilizing light in the ultraviolet region as an excitation light source, “color mixing” occurring in the visible light region can be eliminated.

  Hereinafter, specific examples of the semiconductor light emitting device according to this embodiment will be described with reference to the drawings. In the specific examples described below, the same portions as those described above are denoted by the same reference numerals, and description thereof is omitted.

FIG. 48 is a schematic view illustrating the second semiconductor light emitting device according to the present embodiment.
In other words, the semiconductor light emitting device 200F shown as a cross-sectional view in the drawing is a so-called stem type LED lamp. A dipping resin layer 242F is formed inside the resin 240F, and a fluorescent material FL is applied on the surface of the dipping resin layer 242F.

FIG. 49 is a schematic view illustrating the third semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 250F shown as a cross-sectional view in the drawing is a so-called substrate type SMD lamp. A dipping resin layer 292F is formed inside the resin 290F, and a fluorescent material FL is applied on the surface of the dipping resin layer 292F.

FIG. 50 is a schematic view illustrating the fourth semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 350F shown as a cross-sectional view in the drawing is a so-called surface light emitting type semiconductor light emitting device. A dipping resin layer 392E is formed inside the resin 390F, and the fluorescent material FL is contained on the surface of the dipping resin layer 392F.

FIG. 51 is a schematic view illustrating the fifth semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 400F shown as a cross-sectional view in the drawing is a so-called dome-shaped semiconductor light emitting device. A dipping resin layer 442E is formed inside the resin 440F, and the fluorescent material FL is contained on the surface of the dipping resin layer 442F.

FIG. 52 is a schematic view illustrating the sixth semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 500F shown as a cross-sectional view in the drawing is a so-called substrate type 7-segment semiconductor light emitting device. A dipping resin layer 542F is formed inside the resin 540F, and the fluorescent material FL is contained on the surface of the dipping resin layer 542F.

  The specific example of the seventh embodiment of the present invention has been described above with reference to FIGS. In any of the specific examples described above, the various effects described above with reference to FIG. 47 can be obtained similarly.

Next, an eighth embodiment of the present invention will be described.
In the present embodiment, in the envelope of the semiconductor light-emitting device, the light from the semiconductor light-emitting element is wavelength-converted with high efficiency by including a fluorescent substance in any of the lead frame, the stem, and the substrate. A semiconductor light-emitting device that can be taken out can be realized.

  FIG. 53 is a schematic view illustrating the semiconductor light emitting device according to this embodiment. That is, the semiconductor light emitting device 100G shown as a cross-sectional view in the drawing is a so-called lead frame type LED lamp. The semiconductor light emitting device 990 is mounted on the lead frame 110G and sealed with resin 140. Here, in the present embodiment, a fluorescent material is mixed in the lead frames 110G and 120G, and the wavelength of light from the semiconductor light emitting element 990 can be converted and extracted to the outside.

  Also in the present embodiment, the semiconductor light emitting device 990 does not need to contain a fluorescent material. However, in order to obtain high wavelength conversion efficiency in many fluorescent materials that are usually obtained, it is desirable that the semiconductor light emitting device has high luminance in the blue region or in the ultraviolet region having a shorter wavelength. As such a semiconductor light emitting element, for example, light emission using a semiconductor material such as a GaN-based, ZnSe-based, ZnSSe-based, SiC-based, ZnS-based, or BN-based material as described with reference to FIGS. An element can be mentioned.

  Also in the present embodiment, various inorganic phosphors and organic phosphors as described in the first embodiment can be appropriately selected and used as the phosphor material to be used. In the selection, it is desirable to select a fluorescent material having high wavelength conversion efficiency in relation to the emission wavelength of the semiconductor light emitting element to be used and the desired wavelength of extracted light. In addition, it is desirable to select one that is effectively excited by light having a wavelength other than the visible light region. This is because when a fluorescent material excited by visible light is used, so-called “color mixing” occurs when semiconductor light emitting devices are arranged in parallel. That is, the fluorescent material of the semiconductor light emitting device is excited by receiving visible light from an adjacent light emitting device, and may cause unnecessary light emission.

  According to the present embodiment, the wavelength of light from the semiconductor light emitting element 990 is converted by the phosphor and extracted outside, so that the uniformity of the emission wavelength is very good. That is, the emission wavelength of the phosphor is constant without depending on the intensity and wavelength of the excitation light, and therefore the emission wavelength of the semiconductor light emitting device is stable even when the characteristics of the semiconductor light emitting element vary. For the same reason, it is also possible to suppress variations in the emission wavelength depending on the drive current and applied voltage.

  Also in the present embodiment, the problem that the wavelength of light extracted from the light emitting device changes depending on the direction can be solved.

  Moreover, according to this embodiment, the lifetime of a light-emitting device can be extended and manufacturing cost can also be reduced. Furthermore, by utilizing light in the ultraviolet region as an excitation light source, “color mixing” occurring in the visible light region can be eliminated.

  Hereinafter, specific examples of the semiconductor light emitting device according to this embodiment will be described with reference to the drawings. In the specific examples described below, the same portions as those described above are denoted by the same reference numerals, and description thereof is omitted.

FIG. 54 is a schematic view illustrating the second semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 200G shown as a cross-sectional view in the drawing is a so-called stem type LED lamp. And the fluorescent material is contained in the insulating member 220G of the stem 210G.

FIG. 55 is a schematic view illustrating the third semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 250G shown as a cross-sectional view in the drawing is a so-called substrate type SMD lamp. The substrate 260G contains a fluorescent material.

FIG. 56 is a schematic view illustrating the fourth semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 300G shown as a cross-sectional view in the drawing is a so-called lead frame type SMD lamp. The lead frame 310G contains a fluorescent material.

FIG. 57 is a schematic view illustrating the fifth semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 350G shown as a cross-sectional view in the drawing is a so-called surface light emitting type semiconductor light emitting device. The lead frames 360G and 362G contain a fluorescent material.

FIG. 58 is a schematic view illustrating the sixth semiconductor light emitting device according to the present embodiment.
In other words, the semiconductor light emitting device 400G shown as a cross-sectional view in the drawing is a so-called dome-shaped semiconductor light emitting device. The lead frame 410G contains a fluorescent material.

FIG. 59 is a schematic view illustrating the seventh semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 450G shown in the drawing as a plan view and a cross-sectional view is a so-called meter pointer type semiconductor light emitting device. The substrate 460G contains a fluorescent material.

FIG. 60 is a schematic view illustrating the eighth semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 500G shown as a cross-sectional view in the drawing is a so-called substrate type 7-segment semiconductor light emitting device. The substrate 510G contains a fluorescent material. In addition, although the example shown in the figure represents a so-called “hollow type”, the present embodiment can be similarly applied to a “resin sealing type”.

FIG. 61 is a schematic view illustrating the ninth semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 550G shown as a cross-sectional view in the drawing is a so-called lead frame type 7-segment semiconductor light emitting device. The lead frame 560G contains a fluorescent material.

  FIG. 62 is a schematic view illustrating the tenth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 650G shown as a cross-sectional view in the drawing is a so-called matrix type semiconductor light emitting device. The substrate 660G contains a fluorescent material.

  FIG. 63 is a schematic view illustrating the eleventh semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 700G shown as a cross-sectional view in the drawing is a so-called array type semiconductor light emitting device. The substrate 720G or the reflecting plate 722G contains a fluorescent material.

  FIG. 64 is a schematic view illustrating the twelfth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 750G shown as a cross-sectional view in the drawing is a semiconductor light emitting device as a so-called can type laser. The stem 770G contains a fluorescent substance.

  The specific example of the eighth embodiment of the present invention has been described above with reference to FIGS. In any of the specific examples described above, the various effects described above with reference to FIG. 53 can be obtained similarly.

Next, a ninth embodiment of the present invention will be described.
In the present embodiment, by arranging a fluorescent material in a portion corresponding to the lower side of the semiconductor light emitting element in the envelope of the semiconductor light emitting device, the light from the semiconductor light emitting element is wavelength-converted with high efficiency to the outside. A semiconductor light emitting device that can be taken out can be realized. More specifically, a fluorescent material is disposed on the lead frame, the stem, or the mounting portion of the light emitting element of the substrate.

  FIG. 65 is a schematic view illustrating the semiconductor light emitting device according to this embodiment. That is, the semiconductor light emitting device 100H shown as a cross-sectional view in the drawing is a so-called lead frame type LED lamp. The semiconductor light emitting device 990 is mounted on the lead frame 110 and sealed with a resin 140. Here, in the present embodiment, the fluorescent material layer FL is disposed between the lead frame 110 and the semiconductor light emitting element 990, and the wavelength of light from the semiconductor light emitting element 990 can be converted and extracted to the outside. It has been made possible.

  A method for forming such a fluorescent material layer FL will be described below.

  As a first method, a method of mixing a fluorescent substance into an adhesive for mounting the semiconductor light emitting element 990 can be mentioned. Examples of the type of adhesive include a resin system, a rubber system, an organic material system, an inorganic material system, a starch system, a protein system, a tar system, and a metal solder system. Here, when an inorganic solvent is used, it is advantageous in that heat resistance and chemical resistance are high and nonflammability is obtained. In addition, when rubber, starch or protein is used, the stress after drying is relaxed, and it is possible to prevent defects such as element degradation and wire breakage due to residual stress of the adhesive. It is advantageous. In addition, starch and protein have an advantage that they are easy to handle in terms of water solubility.

  After a predetermined fluorescent material is dispersed in these adhesives and applied to the mounting surface of the lead frame, the semiconductor light emitting device 990 is placed and the adhesive is cured. A material layer FL can be provided.

  As a second method, there is a method in which a fluorescent material is applied to the mounting surface of the lead frame, dried, and the semiconductor light emitting device 990 is newly fixed thereon using an adhesive. Here, examples of the solvent for applying the fluorescent material include various solvents as described above with reference to FIG.

  As a third method, there is a method in which a fluorescent material layer FL processed into a flat plate (tablet) shape is fixed on the mount surface of the lead frame with an adhesive or the like, and the semiconductor light emitting device 990 is fixed thereon. Can do.

  Also in the present embodiment, the semiconductor light emitting device 990 does not need to contain a fluorescent material. However, in order to obtain high wavelength conversion efficiency in many fluorescent materials that are usually obtained, it is desirable that the semiconductor light emitting device has high luminance in the blue region or in the ultraviolet region having a shorter wavelength. Examples of such a semiconductor light emitting device include a light emitting device using a semiconductor material such as a GaN-based material, a ZnSe-based material, a SiC-based material, a ZnS-based material, or a BN-based material as described with reference to FIGS. be able to.

  Also in the present embodiment, various inorganic phosphors and organic phosphors as described in the first embodiment can be appropriately selected and used as the phosphor material to be used. In the selection, it is desirable to select a fluorescent material having high wavelength conversion efficiency in relation to the emission wavelength of the semiconductor light emitting element to be used and the desired wavelength of extracted light. In addition, it is desirable to select one that is effectively excited by light having a wavelength other than the visible light region. This is because when a fluorescent material excited by visible light is used, so-called “color mixing” occurs when semiconductor light emitting devices are arranged in parallel. That is, the fluorescent material of the semiconductor light emitting device is excited by receiving visible light from an adjacent light emitting device, and may cause unnecessary light emission.

  According to the present embodiment, the light from the semiconductor light emitting device 990 is converted in wavelength by the phosphor layer FL and extracted outside, so that the uniformity of the emission wavelength is very good. That is, the emission wavelength of the phosphor is constant without depending on the intensity and wavelength of the excitation light, and therefore the emission wavelength of the semiconductor light emitting device is stable even when the characteristics of the semiconductor light emitting element vary. For the same reason, it is also possible to suppress variations in the emission wavelength depending on the drive current and applied voltage.

  In the present embodiment, the light source is limited to the vicinity of the light emitting element. Therefore, the optical path through which the light from the light emitting element passes through the phosphor layer FL is substantially constant regardless of the direction of the light, and the conversion efficiency is uniform. As a result, the problem that the wavelength of light extracted from the light emitting device changes depending on the direction is solved.

  Moreover, according to this embodiment, the lifetime of a light-emitting device can be extended and manufacturing cost can also be reduced. Furthermore, by utilizing light in the ultraviolet region as an excitation light source, “color mixing” occurring in the visible light region can be eliminated.

  Hereinafter, specific examples of the semiconductor light emitting device according to this embodiment will be described with reference to the drawings. In the specific examples described below, the same portions as those described above are denoted by the same reference numerals, and description thereof is omitted.

FIG. 66 is a schematic view illustrating the second semiconductor light emitting device according to the present embodiment.
In other words, the semiconductor light emitting device 200H shown as a cross-sectional view in the drawing is a so-called stem type LED lamp. Then, the fluorescent material layer FL is disposed between the stem 210 and the semiconductor light emitting device 990 by any of the methods described above.

FIG. 67 is a schematic view illustrating the third semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 250H shown as a cross-sectional view in the drawing is a so-called substrate type SMD lamp. A fluorescent material layer FL is disposed between the substrate 260 and the semiconductor light emitting device 990 by any of the methods described above.

FIG. 68 is a schematic view illustrating the fourth semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 300H shown as a cross-sectional view in the drawing is a so-called lead frame type SMD lamp. The fluorescent material layer FL is disposed between the lead frame 310H and the semiconductor light emitting device 990 by any of the methods described above.

FIG. 69 is a schematic view illustrating the fifth semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 350H shown as a cross-sectional view in the drawing is a so-called surface-emitting type semiconductor light emitting device. The fluorescent material layer FL is disposed between the lead frames 360 and 362 and the semiconductor light emitting device 990 by any of the methods described above.

FIG. 70 is a schematic view illustrating the sixth semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 400H shown as a cross-sectional view in the drawing is a so-called dome-shaped semiconductor light emitting device. The fluorescent material layer FL is disposed between the lead frame 410 and the semiconductor light emitting device 990 by any of the methods described above.

FIG. 71 is a schematic view illustrating the seventh semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 450H shown in the drawing as a plan view and a cross-sectional view is a so-called meter pointer type semiconductor light emitting device. The fluorescent material layer FL is disposed between the substrate 460 and the semiconductor light emitting element 990 by any of the methods described above.

FIG. 72 is a schematic view illustrating the eighth semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 500H shown as a cross-sectional view in the drawing is a so-called substrate type 7-segment semiconductor light emitting device. Then, the fluorescent material layer FL is disposed between the substrate 510 and the semiconductor light emitting device 990 by any of the methods described above. In addition, although the example shown in the figure represents a so-called “hollow type”, the present embodiment can be similarly applied to a “resin sealing type”.

FIG. 73 is a schematic view illustrating the ninth semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 550H shown as a cross-sectional view in the drawing is a so-called lead frame type 7 segment type semiconductor light emitting device. The fluorescent material layer FL is disposed between the lead frame 560 and the semiconductor light emitting device 990 by any of the methods described above.

  FIG. 74 is a schematic view illustrating the tenth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 650H shown as a cross-sectional view in the drawing is a so-called matrix type semiconductor light emitting device. Then, the fluorescent material layer FL is disposed between the substrate 660 and the semiconductor light emitting device 990 by any of the methods described above.

  FIG. 75 is a schematic view illustrating the eleventh semiconductor light emitting device according to the present embodiment. In other words, the semiconductor light emitting device 700H shown as a cross-sectional view in the drawing is a so-called array type semiconductor light emitting device. The fluorescent material layer FL is disposed between the reflecting plate 722 and the semiconductor light emitting element 990 by any of the methods described above.

  FIG. 76 is a schematic view illustrating the twelfth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 750H shown as a cross-sectional view in the drawing is a semiconductor light emitting device as a so-called can type laser. A fluorescent material layer FL is disposed between the stem 770 and the semiconductor light emitting device 990 by any of the methods described above.

  The specific example of the ninth embodiment of the present invention has been described above with reference to FIGS. In any of the specific examples described above, the various effects described above with reference to FIG. 65 can be similarly obtained.

Next, a tenth embodiment of the present invention will be described.
In the present embodiment, a semiconductor light emitting device that can efficiently convert the wavelength of light from a semiconductor light emitting element and extract it to the outside by applying a fluorescent material to a light reflecting surface such as a lead frame of the semiconductor light emitting device. Can be realized.

  FIG. 77 is a schematic view illustrating the semiconductor light emitting device according to this embodiment. That is, the semiconductor light emitting device 100I shown as a cross-sectional view in the drawing is a so-called lead frame type LED lamp. The semiconductor light emitting device 990 is mounted on the lead frame 110 and sealed with a resin 140. Here, in the present embodiment, the fluorescent material layer FL is formed on the light reflection surface of the lead frame 110 so that the wavelength of the light from the semiconductor light emitting element 990 can be extracted and taken out to the outside. Has been.

  Such a fluorescent material layer FL can be formed by coating, for example. That is, the fluorescent material layer FL can be formed by dispersing the fluorescent material in a solvent, applying and drying the fluorescent material. Examples of the solvent include resin, rubber, organic material, inorganic material, starchy, protein, tar, and metal solder. Here, when an inorganic solvent is used, it is advantageous in that heat resistance and chemical resistance are high and nonflammability is obtained. In addition, when rubber, starch or protein is used, the stress after drying is relaxed, and it is advantageous in that it can prevent defects such as element degradation and wire disconnection due to residual stress of the solvent. It is. In addition, starch and protein have an advantage that they are easy to handle in terms of water solubility.

  Also in the present embodiment, the semiconductor light emitting device 990 does not need to contain a fluorescent material. However, in order to obtain high wavelength conversion efficiency in many fluorescent materials that are usually obtained, it is desirable that the semiconductor light emitting device has high luminance in the blue region or in the ultraviolet region having a shorter wavelength. Examples of such a semiconductor light emitting device include a light emitting device using a semiconductor material such as a GaN-based material, a ZnSe-based material, a SiC-based material, a ZnS-based material, or a BN-based material as described with reference to FIGS. be able to.

  Also in the present embodiment, various inorganic phosphors and organic phosphors as described in the first embodiment can be appropriately selected and used as the phosphor material to be used. In the selection, it is desirable to select a fluorescent material having high wavelength conversion efficiency in relation to the emission wavelength of the semiconductor light emitting element to be used and the desired wavelength of extracted light. In addition, it is desirable to select one that is effectively excited by light having a wavelength other than the visible light region. This is because when a fluorescent material excited by visible light is used, so-called “color mixing” occurs when semiconductor light emitting devices are arranged in parallel. That is, the fluorescent material of the semiconductor light emitting device is excited by receiving visible light from an adjacent light emitting device, and may cause unnecessary light emission.

  According to the present embodiment, the light from the semiconductor light emitting device 990 is converted in wavelength by the phosphor layer FL and extracted outside, so that the uniformity of the emission wavelength is very good. That is, the emission wavelength of the phosphor is constant without depending on the intensity and wavelength of the excitation light, and therefore the emission wavelength of the semiconductor light emitting device is stable even when the characteristics of the semiconductor light emitting element vary. For the same reason, it is also possible to suppress variations in the emission wavelength depending on the drive current and applied voltage.

  In the present embodiment, the light source is limited to the vicinity of the light emitting element. Therefore, the optical path through which the light from the light emitting element passes through the phosphor layer FL is substantially constant regardless of the direction of the light, and the conversion efficiency is uniform. As a result, the problem that the wavelength of light extracted from the light emitting device changes depending on the direction is solved.

  Moreover, according to this embodiment, the lifetime of a light-emitting device can be extended and manufacturing cost can also be reduced. Furthermore, by utilizing light in the ultraviolet region as an excitation light source, “color mixing” occurring in the visible light region can be eliminated.

  Hereinafter, specific examples of the semiconductor light emitting device according to this embodiment will be described with reference to the drawings. In the specific examples described below, the same portions as those described above are denoted by the same reference numerals, and description thereof is omitted.

FIG. 78 is a schematic view illustrating the second semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 200I shown as a cross-sectional view in the drawing is a so-called stem type LED lamp. A fluorescent material layer FL is applied on the light reflection surface of the stem 210.

FIG. 79 is a schematic view illustrating the third semiconductor light emitting device according to the present embodiment.
In other words, the semiconductor light emitting device 250I shown as a cross-sectional view in the drawing is a so-called substrate type SMD lamp. A fluorescent material layer FL is applied on the light reflection surface of the substrate 260.

FIG. 80 is a schematic view illustrating the fourth semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 300I shown as a cross-sectional view in the drawing is a so-called lead frame type SMD lamp. A fluorescent material layer FL is applied on the light reflection surface of the lead frame 310.

FIG. 81 is a schematic view illustrating the fifth semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 350I shown as a cross-sectional view in the drawing is a so-called surface light emitting type semiconductor light emitting device. A fluorescent material layer FL is applied on the light reflection plate 370.

FIG. 82 is a schematic view illustrating the sixth semiconductor light emitting device according to the present embodiment.
In other words, the semiconductor light emitting device 400I shown as a cross-sectional view in the drawing is a so-called dome-shaped semiconductor light emitting device. A fluorescent material layer FL is applied on the light reflection surface of the lead frame 410.

FIG. 83 is a schematic view illustrating the seventh semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 450I shown in the drawing as a plan view and a cross-sectional view is a so-called meter pointer type semiconductor light emitting device. Then, the fluorescent material layer FL is applied on the light reflecting surface of the substrate 460.

FIG. 84 is a schematic view illustrating the eighth semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 500I shown as a cross-sectional view in FIG. A fluorescent material layer FL is applied on the light reflection plate 520. In addition, although the example shown in the figure represents a so-called “hollow type”, the present embodiment can be similarly applied to a “resin sealing type”.

FIG. 85 is a schematic view illustrating the ninth semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 550I shown as a cross-sectional view in the drawing is a so-called lead frame type 7-segment semiconductor light emitting device. A fluorescent material layer FL is applied to the surface of the light reflection plate 570.

  FIG. 86 is a schematic view illustrating the tenth semiconductor light emitting device according to the present embodiment. In other words, the semiconductor light emitting device 650I shown as a cross-sectional view in the drawing is a so-called matrix type semiconductor light emitting device. A fluorescent material layer FL is applied to the surface of the light reflecting plate 670.

  FIG. 87 is a schematic view illustrating the eleventh semiconductor light emitting device according to the present embodiment. In other words, the semiconductor light emitting device 700I shown as a cross-sectional view in the drawing is a so-called array type semiconductor light emitting device. The fluorescent material layer FL is applied to the surfaces of the light reflecting plate 722 and the partition plate 724.

  FIG. 88 is a schematic view illustrating the twelfth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 750I shown as a cross-sectional view in the drawing is a semiconductor light emitting device as a so-called can type laser. The fluorescent material layer FL is applied to the light reflecting surface of the stem 770.

  The specific example of the tenth embodiment of the present invention has been described above with reference to FIGS. 77 to 88. In any of the specific examples described above, the various effects described above with reference to FIG. 77 can be similarly obtained.

Next, an eleventh embodiment of the present invention will be described.
In the present embodiment, by arranging a fluorescent material layer in the light extraction portion of the semiconductor light emitting device, a semiconductor light emitting device that can efficiently convert the wavelength of light from the semiconductor light emitting element and extract it to the outside is realized. Can do.

  FIG. 89 is a schematic view illustrating the semiconductor light emitting device according to this embodiment. That is, the semiconductor light emitting device 350J shown as a cross-sectional view in the drawing is a so-called surface light emitting type semiconductor light emitting device. A fluorescent material layer FL is disposed in the light extraction window portion of the light emitting device, and the wavelength of light from the semiconductor light emitting element 990 can be converted and extracted to the outside.

Such a fluorescent material layer FL can be formed, for example, by applying a solvent in which the fluorescent material is dispersed on the light extraction window and drying it. Examples of the solvent include resin-based, rubber-based, organic material-based, inorganic material-based, starch-based, protein, tar-based, metal solder-based and the like, as described above.
Here, when an inorganic solvent is used, it is advantageous in that heat resistance and chemical resistance are high and nonflammability is obtained. Further, when rubber, starch or protein is used, it is advantageous in that stress after drying is relaxed and defects such as cracks due to residual stress of the solvent can be prevented. In addition, starch and protein have an advantage that they are easy to handle in terms of water solubility.

  Further, a light-transmitting film in which a fluorescent material is previously applied or dispersed therein may be attached to the light extraction window of the semiconductor light emitting device.

  On the other hand, in the case of a semiconductor light emitting device having a condensing lens in the light extraction portion, the fluorescent material may be applied to the lens surface or dispersed inside.

  Also in the present embodiment, the semiconductor light emitting device 990 does not need to contain a fluorescent material. However, in order to obtain high wavelength conversion efficiency in many fluorescent materials that are usually obtained, it is desirable that the semiconductor light emitting device has high luminance in the blue region or in the ultraviolet region having a shorter wavelength. Examples of such a semiconductor light emitting device include a light emitting device using a semiconductor material such as a GaN-based material, a ZnSe-based material, a SiC-based material, a ZnS-based material, or a BN-based material as described with reference to FIGS. be able to.

  Also in the present embodiment, various inorganic phosphors and organic phosphors as described in the first embodiment can be appropriately selected and used as the phosphor material to be used. In the selection, it is desirable to select a fluorescent material having high wavelength conversion efficiency in relation to the emission wavelength of the semiconductor light emitting element to be used and the desired wavelength of extracted light. In addition, it is desirable to select one that is effectively excited by light having a wavelength other than the visible light region. This is because when a fluorescent material excited by visible light is used, so-called “color mixing” occurs when semiconductor light emitting devices are arranged in parallel. That is, the fluorescent material of the semiconductor light emitting device is excited by receiving visible light from an adjacent light emitting device, and may cause unnecessary light emission.

  According to the present embodiment, the light from the semiconductor light emitting device 990 is converted in wavelength by the phosphor layer FL and extracted outside, so that the uniformity of the emission wavelength is very good. That is, the emission wavelength of the phosphor is constant without depending on the intensity and wavelength of the excitation light, and therefore the emission wavelength of the semiconductor light emitting device is stable even when the characteristics of the semiconductor light emitting element vary. For the same reason, it is also possible to suppress variations in the emission wavelength depending on the drive current and applied voltage.

  Moreover, according to this embodiment, the lifetime of a light-emitting device can be extended and manufacturing cost can also be reduced. Furthermore, by utilizing light in the ultraviolet region as an excitation light source, “color mixing” occurring in the visible light region can be eliminated.

  Hereinafter, specific examples of the semiconductor light emitting device according to this embodiment will be described with reference to the drawings. In the specific examples described below, the same portions as those described above are denoted by the same reference numerals, and description thereof is omitted.

FIG. 90 is a schematic view illustrating the second semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 450J shown in the drawing as a plan view and a cross-sectional view is a so-called meter pointer type semiconductor light emitting device. Then, the fluorescent material layer FL is formed on the light extraction portion by any of the methods described above.

FIG. 91 is a schematic view illustrating the third semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 500J shown as a cross-sectional view in the drawing is a so-called substrate type 7-segment semiconductor light emitting device. Then, the fluorescent material layer FL is formed on the light extraction portion by any of the methods described above. In addition, although the example shown in the figure represents a so-called “hollow type”, the present embodiment can be similarly applied to a “resin sealing type”.

FIG. 92 is a schematic view illustrating the fourth semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 550J shown as a cross-sectional view in the drawing is a so-called lead frame type 7 segment type semiconductor light emitting device. Then, the fluorescent material layer FL is formed on the light extraction portion by any of the methods described above.

FIG. 93 is a schematic view illustrating the fifth semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 650J shown as a cross-sectional view in the drawing is a so-called matrix type semiconductor light emitting device. Then, the fluorescent material layer FL is formed on the light extraction portion by any of the methods described above.

FIG. 94 is a schematic view illustrating the sixth semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 700J shown as a cross-sectional view in the drawing is a so-called array type semiconductor light emitting device. The rod lens 740 contains a fluorescent material. Further, a fluorescent material may be applied to the surface of the rod lens 740 or a transparent film containing the fluorescent material may be attached.

FIG. 95 is a schematic view illustrating the seventh semiconductor light emitting device according to the present embodiment.
That is, the semiconductor light emitting device 750J shown as a cross-sectional view in the drawing is a semiconductor light emitting device as a so-called can type laser. Then, the fluorescent material layer FL is formed on the light extraction portion by any of the methods described above.

  The specific example of the eleventh embodiment of the present invention has been described above with reference to FIGS. In any of the specific examples described above, the various effects described above with reference to FIG. 89 can be similarly obtained.

Next, a twelfth embodiment of the present invention will be described.
In this embodiment, by arranging a mass of fluorescent material in the vicinity of the light extraction portion of the light emitting element of the semiconductor light emitting device, the semiconductor light emission capable of efficiently converting the wavelength of the light from the semiconductor light emitting element and extracting it to the outside An apparatus can be realized.

  FIG. 96 is a schematic view illustrating the semiconductor light emitting device according to this embodiment. That is, the semiconductor light emitting devices 100K and 100L shown as cross-sectional views in FIGS. 1A and 1B are so-called lead frame type LED lamps.

  The LED lamp 100K shown in FIG. 5A is configured to convert the wavelength of the fluorescent substance lump FL processed into a plate shape above the semiconductor light emitting device 990. Further, in the LED lamp 100L shown in FIG. 5B, a phosphor lump FL processed into a disk shape is arranged above the semiconductor light emitting element 990, and further processed so as to cover its periphery. FL is arranged. Such a phosphor block FL can be formed, for example, by mixing and sintering the phosphor in a predetermined medium such as an organic material or an inorganic material. In addition, the shape and the position of the arrangement can be optimized as appropriate according to the configuration of the semiconductor light emitting device. Also in the present embodiment, the light emitted from the semiconductor light emitting device 990 is converted in wavelength by the phosphor FL and can be extracted outside. Therefore, it is possible to obtain the same effect as each of the embodiments described above.

10, 50 Semiconductor light emitting element 100, 200 LED lamp 250, 300 SMD lamp 350 Surface emitting light emitting device 400 Dome type light emitting device 450 Meter pointer type light emitting device 500, 550 7 segment type light emitting device 600 Level meter type light emitting device 650 Matrix Type light emitting device 700 array type light emitting device 750 can type light emitting device

Claims (5)

A lead frame;
A semiconductor light emitting device mounted on the lead frame;
Disposed on the surface of the lead frame on the same main surface side as the surface on which the semiconductor light emitting element is mounted, absorbs light of the first wavelength emitted from the semiconductor light emitting element and differs from the first wavelength A semiconductor light emitting device comprising: a fluorescent material layer that converts the light into a second wavelength and emits the light.   The semiconductor light emitting device according to claim 1, wherein the fluorescent material layer is disposed on the main surface side of the lead frame and on the same surface as the surface on which the semiconductor light emitting element is mounted. One end side of the lead frame is formed in a cup shape,
The fluorescent material layer is disposed on a reflective surface provided on the slope of the cup,
The semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting element is mounted on a bottom surface of the cup.   The semiconductor light emitting device according to claim 1, wherein the fluorescent material layer is disposed in a portion corresponding to a lower side of the semiconductor light emitting element.   The semiconductor light emitting device according to claim 4, wherein the fluorescent material layer is mixed in an adhesive that joins the lead frame and the semiconductor light emitting element.

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