JP2000082849A - Semiconductor light emitting element, semiconductor light emitting device and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element that is capable of emitting light that ranges from visible light to infrared stably keeping it, high in brightness and constant in wavelength by a method wherein a fluorescent material possessed of a wavelength conversion function is properly mixed, deposited or arranged inside or on the surface of the semiconductor light emitting element. SOLUTION: A semiconductor light emitting element 10 contains a fluorescent material somewhere in it or is possessed of a fluorescent material deposited somewhere on it. A fluorescent substance efficiently excited by light within an ultraviolet range can be selected out of fluorescent substances that emit red light, blue light, and green light, respectively, so that nearly all color tones in a visible light range can be obtained by the use of a mixture composed of these fluorescent substances mixed at a proper mixing ratio. These fluorescent substances are possessed of absorption peaks in a wavelength band of 340 to 380 nm. Therefore, it is preferable that a light emitting layer 20 emits ultraviolet rays whose wavelength is shorter than 380 nm so as to carry out a wavelength conversion efficiently through these fluorescent substances.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

TECHNICAL FIELD The present invention relates to a semiconductor light emitting device,
The present invention relates to a semiconductor light emitting device and a method for manufacturing the same. More specifically, the present invention relates to a semiconductor light-emitting element, a semiconductor light-emitting device, and a method for manufacturing the same, which can extract light whose wavelength has been converted with high efficiency by exciting a phosphor.

[0002]

2. Description of the Related Art Semiconductor light-emitting elements and various semiconductor light-emitting devices having the same have many advantages such as compactness, low power consumption, and excellent reliability. It is also being widely applied to required indoor and outdoor display boards, railway / traffic signals, on-vehicle lamps, and the like.

[0003] Among these semiconductor light emitting devices, a light emitting device using a gallium nitride-based semiconductor has recently attracted attention. Gallium nitride based semiconductor is a direct transition type III-V
It is a group III compound conductor and has a feature that light can be emitted with high efficiency in a relatively short wavelength region.

[0004] Incidentally, the term "gallium nitride based semiconductor" as used _{herein, In x Al y Ga 1-} x- y N (0 ≦ x, y ≦
It is assumed that semiconductors of all compositions in which the composition ratios x and y in the chemical formula of (1, x + y ≦ 1) are changed from zero to one are included. For example, InGaN (x> 0, y = 0)
Are also included in the “gallium nitride based semiconductor”.

[0005] A gallium nitride based semiconductor has a band gap of 1.89-6.
Because it changes to 2 eV, it is considered promising as a material for LEDs and semiconductor lasers. In particular, if light can be emitted with high luminance in the wavelength region of blue or ultraviolet light, the recording capacity of various optical disks can be doubled, and the display device can be made full-color. Therefore, In _x Al _y Ga
Short-wavelength light-emitting devices using _1-xy N-based semiconductors are being rapidly developed to improve their initial characteristics and reliability.

References disclosing the structure of a conventional light-emitting device using such a gallium nitride-based semiconductor include, for example, Jpn. J. Appl. Phys. , 28 (19
89) p. L2112, Jpn. J. Appl. Phys
s. , 32 (1993) p. L8 or JP-A-5-29
No. 1621 can be mentioned.

FIG. 97 is a schematic sectional view showing the structure of a conventional gallium nitride-based light emitting device. The schematic configuration will be described as follows. That is, the light emitting element 10
Numeral 0 has a semiconductor multilayer structure laminated on the sapphire substrate 112. On the sapphire substrate 112, a buffer layer 114, an n-type contact layer 116, an n-type cladding layer 118, a light-emitting layer 120, a p-type cladding layer 122, and a p-type
The mold contact layer 124 is formed in this order.

The material of the buffer layer 114 can be, for example, n-type GaN. n-type contact layer 116
Is an n-type semiconductor layer having a high carrier concentration so as to ensure ohmic contact with the n-side electrode 134, and the material thereof can be, for example, GaN. Each of the n-type cladding layer 118 and the p-type cladding layer 122 has a role of confining light in the light emitting layer 120 and is required to have a lower refractive index than the light emitting layer. The material can be, for example, AlGaN having a larger gap than the light emitting layer 120. The light-emitting layer 120 is a semiconductor layer that emits light when electric charges injected into the light-emitting element as a current recombine. As the material,
For example, undoped InGaN can be used. The p-type contact layer 124 is a p-type semiconductor layer having a high carrier concentration so as to ensure ohmic contact with the p-side electrode, and may be made of, for example, GaN.

On the p-type contact layer 124, a p-side electrode layer 126 is deposited. Further, on the n-type contact layer 118, an n-side electrode layer 134 is deposited.

A current blocking layer 130 is formed on a part of the p-type contact layer 124. Current blocking layer 1
A bonding pad 132 made of Au is placed on top of 30.
Is deposited, and a part thereof is in contact with the p-side electrode 126. A wire (not shown) for supplying a drive current to the element is bonded to the bonding pad 132.

The current blocking layer 130 has a role of suppressing light emission from occurring below the Au electrode 132. That is, in the light-emitting element 100, light emitted from the light-emitting layer 120 is transmitted through the electrode layer 126 and extracted upward. However, the bonding pad 132 cannot transmit light because the thickness of the electrode is large. Therefore, the provision of the current blocking layer 130 prevents the drive current from being injected below the bonding pad 132, thereby suppressing unnecessary light emission.

A bonding pad 132 is also stacked on the n-side electrode layer 134. bonding·
The pad 132 can be formed by depositing Au thickly. Further, the bonding pad 132
The other surface portions are covered with the silicon oxide layer 145.

In the light emitting device 100 described above, the back surface of the substrate 112 is bonded to a mounting member (not shown) such as a lead frame or a mounting substrate, and wires are bonded to the bonding pads 132, respectively, so that a driving current is supplied. Is done.

[0014]

However, the conventional light-emitting and light-emitting device as shown in FIG. 97 has a structure in which light emitted from a semiconductor light-emitting element is directly extracted to the outside. there were.

First, there is a problem that the emission wavelength varies from element to element due to variations in the structure of the light emitting elements. That is, even when the semiconductor light emitting device is manufactured under the same conditions, the emission wavelength tends to vary due to variation in the amount of impurities mixed or the thickness of each layer.

Second, there is a problem that the emission wavelength changes depending on the driving current. That is, the emission wavelength may fluctuate depending on the amount of current supplied to the semiconductor light emitting element, and it is difficult to independently control the emission luminance and the emission wavelength.

Third, there is a problem that the emission wavelength changes depending on the temperature. That is, when the temperature of the semiconductor light-emitting element, particularly the light-emitting layer portion, changes, the effective band gap of the light-emitting layer also changes.

Fourth, there is a problem in that the material and structure of the built-in semiconductor light emitting element must be appropriately selected and changed according to the emission wavelength. For example, to emit light in red, use an AlGaAs-based material, use GaAsP-based or InGaAlP-based material in yellow, use InGaAlP-based or GaP-based material in green,
In blue, there is a problem that an optimum material such as an InGaN-based material must be selected according to the wavelength.

The present invention has been made in view of such a point. That is, the present invention provides a semiconductor light-emitting element, a semiconductor light-emitting device, and a method of manufacturing the same, which have extremely stable emission wavelengths and can emit light with high luminance at various wavelengths from visible light to infrared light. Aim.

[0020]

According to the present invention, a fluorescent substance having a wavelength conversion function is appropriately applied to the inside or surface of a semiconductor light emitting element, the resin portion of a semiconductor light emitting device, or the surface or inside of another envelope. It is an object of the present invention to provide a semiconductor light emitting device and a light emitting device which can convert the wavelength of light emitted from a semiconductor light emitting device with extremely high efficiency by mixing, depositing, or disposing, and extract the wavelength to the outside.

That is, in the semiconductor light emitting device according to the present invention, the light emitting layer that emits light of the first wavelength and the first wavelength that absorbs the light of the first wavelength emitted by the light emitting layer are: And a fluorescent substance that emits light of a different second wavelength, and has various advantages such as extremely stable emission wavelength and easy adjustment of emission color.

A first electrode, a first semiconductor layer connected to the first electrode and having a first conductivity type, provided on the first semiconductor layer, and having a first wavelength A light-emitting layer that emits light, a second semiconductor layer provided on the light-emitting layer and having a second conductivity type, and a second electrode connected to the second semiconductor layer. A semiconductor light emitting device comprising: a fluorescent material that absorbs light of the first wavelength emitted from the light emitting layer and emits light of a second wavelength different from the first wavelength. It can also be configured as:

Similarly, in the semiconductor light emitting device, by appropriately arranging phosphors at various parts of the mounting member, wavelength conversion can be performed with high efficiency.

Further, the method for manufacturing a semiconductor light emitting device according to the present invention includes a step of mounting a semiconductor light emitting element on a mounting member, and a step of applying a sticky or adhesive medium on the semiconductor light emitting element. The step of spraying a phosphor on the medium, and the step of drying the medium, characterized in that it comprises, or, the phosphor,
It may be dispersed in a medium in advance.

[0025]

DESCRIPTION OF THE PREFERRED EMBODIMENTS According to the present invention, a fluorescent substance having a wavelength conversion function is appropriately mixed inside or on the surface of a semiconductor light emitting element, on the resin portion of a semiconductor light emitting device, or on the surface or inside of another envelope. It is an object of the present invention to provide a semiconductor light emitting device and a light emitting device which can convert the wavelength of light emitted from the semiconductor light emitting device with extremely high efficiency by extracting, depositing or arranging the light to be extracted outside.

An embodiment of the present invention will be described below with reference to the drawings. First, as a first embodiment of the present invention, a semiconductor light emitting device containing a fluorescent substance will be described with reference to specific examples.

FIG. 1 is a sectional view showing a schematic structure of a first semiconductor light emitting device according to the present invention. That is, the semiconductor light emitting device 10 according to the present invention is a gallium nitride based semiconductor light emitting device, and has a layer structure laminated on the sapphire substrate 12. On the sapphire substrate 12, the buffer layer 1
4, n-type contact layer 16, n-type clad layer 18, light-emitting layer 20, p-type clad layer 22, and p-type contact layer 2
4 are formed in this order.

The material of the buffer layer 14 is, for example, n-type G
aN. The n-type contact layer 16 has n
An n-type semiconductor layer having a high carrier concentration so as to ensure ohmic contact with the side electrode 34, and may be made of, for example, GaN. The n-type cladding layer 18 and the p-type cladding layer 22 are
It is required to have a role of confining light to zero and to have a lower refractive index than the light emitting layer. The material is, for example,
AlGaN having a larger gap than the light emitting layer 20 can be used. The light-emitting layer 20 is a semiconductor layer that emits light when electric charges injected into the light-emitting element as a current recombine. As the material, for example, undoped InGaN can be used. The p-type contact layer 24 is a p-type semiconductor layer having a high carrier concentration so as to ensure ohmic contact with the p-side electrode, and may be made of, for example, GaN.

On the p-type contact layer 24, a p-side electrode layer 26 is deposited. The p-side electrode layer 26 includes, for example,
It can be formed by depositing a thin metal material such as gold to have a light-transmitting property. Alternatively, the p-side electrode layer 26 may be formed of a light-transmitting conductive film such as indium tin oxide (ITO). Also, the n-type contact layer 1
On n, an n-side electrode layer 34 is deposited.

In a portion above the p-type contact layer 24,
A current blocking layer 30 is formed. A bonding pad 32 made of Au is deposited on the current blocking layer 30, and a part thereof is in contact with the p-side electrode 26. A wire (not shown) for supplying a drive current to the device is bonded to the bonding pad 32.

The current blocking layer 30 has a role of suppressing light emission from occurring below the Au electrode 32. That is, in the light emitting element 10, the light emission generated in the light emitting layer 20 is
Is transmitted through and is taken out upward. However, the bonding pad 32 cannot transmit light due to the large thickness of the electrode. Therefore, by providing the current blocking layer 30, the bonding pad 32
The drive current is prevented from being injected underneath to suppress useless light emission.

The bonding pad 32 is also stacked on the n-side electrode layer 34. The bonding pad 32 can be formed by depositing Au thickly. Further, the surface portion other than the bonding pads 32 is covered with the silicon oxide layer 45.

In the present invention, a fluorescent substance is contained or deposited in at least any part of the semiconductor light emitting device 10. Phosphors which are efficiently excited by light in the ultraviolet region include, for example, Y ₂ O ₂ S: Eu which emits red light, and (Sr, Ca, Ba, Eu) ₁₀ (PO ₄ ) ₆
· Cl _2, as shall become green light, 3 (B
a, Mg, Eu, Mn) such as O · 8Al ₂ O ₃ can be mentioned. By mixing these fluorescent substances in an appropriate ratio, almost all colors in the visible light region can be expressed.

These fluorescent materials are 340-38.
It has an absorption peak in a wavelength band of 0 nm. Therefore,
In order to perform wavelength conversion efficiently with these fluorescent substances, it is desirable that the light emitting layer 20 emits ultraviolet rays in a wavelength band of 380 nm or less.

As a place where the fluorescent material is contained in the semiconductor light emitting element, first, the p-side electrode layer 26 can be mentioned. Next, the silicon oxide layer 45 or the current blocking layer 30
Can be mentioned. In addition, at least one of the semiconductor layers 14 to 24 can be mentioned.
Furthermore, the substrate 12 can be mentioned.

As a method for causing the p-side electrode 26 to contain a fluorescent substance, for example, a sputtering method or an evaporation method can be used. That is, the electrode 26 is formed by these methods.
Can be contained by simultaneously adding a fluorescent substance. The fluorescent material can be contained in the silicon oxide film 45 by the same method. Alternatively, a fluorescent substance may be added by a CVD method.

As a method of incorporating a fluorescent substance into any of the semiconductor layers 14 to 24, for example, a method of simultaneously adding a fluorescent substance in a crystal growth step, or a method of adding a fluorescent substance after crystal growth by, for example, an ion implantation method. Into a semiconductor crystal. A fluorescent substance can be added to the substrate 12 by the same method.

On the other hand, a fluorescent substance may be deposited between layers or on the surface of the semiconductor light emitting device 10. That is, any of the layers between the substrate 12 and the p-type contact layer 24, between the semiconductor layer and the silicon oxide layer 45, between the semiconductor layer and the electrode 26 or 34, the surface of the silicon oxide layer 45, Alternatively, it may be deposited on the surface of 34 or the like. As a method of depositing such a fluorescent substance, for example, an electron beam evaporation method,
Examples include a sputtering method and a coating method.
Further, for example, a fluorescent substance can be formed as an insulating film on the p-type contact layer 24 to obtain an effect as a current blocking layer.

As a method of depositing a fluorescent substance on the surface of the light emitting element, for example, a method of dispersing the fluorescent substance in a solvent, applying the fluorescent substance on the surface of the light emitting element, and drying it can be mentioned. Here, as a solvent in which the phosphor is dispersed, for example, an alkali silicate solution, a silicate colloid aqueous solution, a phosphate aqueous solution, a silicate compound-dissolving organic solvent, a rubber compounding organic solvent,
A natural glue aqueous solution can be used. Also,
In addition to the method of dispersing the phosphor in these solvents and applying it to the surface of the light-emitting element, for example, applying these solvents to the surface of the light-emitting element and sprinkling or spraying the phosphor on it, A phosphor layer can be deposited.

According to the present invention, the light emitted from the semiconductor light emitting element is converted into light of a longer wavelength by incorporating or depositing a fluorescent substance in any part of the semiconductor light emitting element. Then, it can be supplied to the outside.

For example, when the light emitting layer 20 of the light emitting element is made of GaN
, The emission wavelength obtained is 3
It is light in the ultraviolet region of 60 to 380 nanometers. The wavelength of the light in the ultraviolet region is converted by a fluorescent substance and can be extracted to the outside as predetermined visible light or light in the infrared region.

When the light emitting layer 20 is made of InGaN, for example, blue light can be emitted according to the composition of indium. Also in this case, the semiconductor light emitting device according to the present invention can be configured by using a fluorescent substance that receives the light emitted in the blue region, converts the wavelength, and emits light of a longer wavelength. Examples of such a fluorescent substance include an organic fluorescent substance in addition to the inorganic fluorescent substance described above. As the organic phosphor, for example, rhodamine which emits red light is used.
B, the one that emits green light is brillia
ntsulfoflavine FF and the like.

According to the present invention, the light emission from the light emitting layer of the semiconductor light emitting element is not directly extracted, but the wavelength is converted by the fluorescent substance. The problem that the wavelength fluctuates depending on the temperature and the like can be solved. That is, according to the present invention, the light emission luminance and the light emission wavelength of the light emitting element can be controlled independently.

According to the present invention, a plurality of emission wavelengths can be easily obtained by appropriately combining the above-mentioned fluorescent substances. For example, by appropriately mixing red (R), green (G), and blue (B) fluorescent substances and incorporating them into a light-emitting element, white light can be easily emitted.

Note that, in the example shown in FIG.
The gallium nitride based semiconductor light-emitting device using sapphire has been described as an example as 2, but other than this, for example,
SiC, GaN, spinel, ZnO, silicon, GaAs
The present invention can be similarly applied to gallium nitride based semiconductor light emitting devices using various substrates such as s.

Further, the structure is not limited to the double hetero structure described above. In addition, the present invention may be applied to semiconductor light emitting devices having various structures such as a single hetero structure and a multiple quantum well structure. Can be similarly applied.

Next, a second semiconductor light emitting device according to the present invention will be described. FIG. 2 is a sectional view showing a schematic configuration of a second semiconductor light emitting device according to the present invention. That is, the semiconductor light emitting device 50 according to the present invention is a ZnSe-based semiconductor light emitting device, and has a layer structure laminated on the substrate 52. That is, the buffer layer 5 is formed on the GaAs substrate 52.
4, an n-type cladding layer 58, a light-emitting layer 60, a p-type cladding layer 62, and a light-transmitting conductive film 64 are formed in this order.

The material of the buffer layer 54 is, for example, n-type Z
nSe. The n-type cladding layer 58 and the p-type cladding layer 62 have a role of confining light in the light emitting layer 60, respectively, and are required to have a lower refractive index than the light emitting layer. The material can be, for example, ZnSSe having a larger band gap than the light emitting layer 60. The light-emitting layer 60 is a semiconductor layer that emits light when electric charges injected into the light-emitting element as a current recombine. As the material, for example, undoped ZnSe
Can be used. The light-transmitting conductive film 64 is a conductive film having a high light transmittance, for example, indium oxide.
It can be formed of tin (ITO).

On the light transmitting conductive film 64, a p-side electrode 6
6 have been deposited. The p-side electrode 66 can be formed, for example, by depositing a metal material such as gold. An n-side electrode 68 is formed on the back surface of the substrate 52. Further, the surface of the element is appropriately covered with a protective film 70 such as silicon oxide.

In the semiconductor light emitting device 50 shown in FIG. 2, similarly to the above-described light emitting device, the light from the light emitting layer 60 is wavelength-converted by containing or depositing a fluorescent substance in any place. So that it can be taken out.

That is, the ZnSe-based semiconductor light emitting device 50
In the above, light having a wavelength in the blue region or the blue-violet region is obtained from the light emitting layer 60. This blue light can be converted in wavelength by a fluorescent substance, and visible light or infrared light having a longer wavelength can be extracted to the outside.

As for the location where the semiconductor light emitting element 50 contains a fluorescent substance, various places can be mentioned as in the light emitting element 10 described above. That is, first, the p-side electrode layer 66 can be mentioned. Next, a light-transmitting conductive film 64 can be given. Further, a protective film 70 can be given. In addition, at least one of the semiconductor layers 54 to 62 can be used. Further, the substrate 52
Can be mentioned.

As a method for incorporating the fluorescent substance into the p-side electrode 66 or the light-transmitting conductive film 64, for example, a sputtering method or an evaporation method can be used. That is, when the electrode 66 and the conductive film 64 are formed by these methods, the fluorescent substance can be contained by simultaneously adding the fluorescent substance. A fluorescent substance can be contained in the protective film 70 by the same method. Or CV
A fluorescent substance may be added by the method D.

Examples of the method of incorporating a fluorescent substance into any of the semiconductor layers 54 to 62 include a method of simultaneously adding the fluorescent substance in the crystal growth step and a method of adding the fluorescent substance after the crystal growth, for example, by ion implantation. Into a semiconductor crystal. A fluorescent substance can be added to the substrate 52 by the same method.

On the other hand, a fluorescent substance may be deposited between layers or on the surface of the semiconductor light emitting device 50. That is, any one of the layers between the substrate 52 and the light-transmitting conductive film 64, the protective film 70, the semiconductor layer and the electrode 66 or 68, the protective film 7
0 may be deposited on the surface of the electrode 66 or the surface of the electrode 66 or 68. Examples of the method for depositing such a fluorescent substance include an electron beam evaporation method, a sputtering method, and a coating method. Further, for example, a fluorescent substance can be formed as an insulating film on the light-transmitting conductive film 64 to obtain an effect as a current blocking layer.

According to the present invention, the light emitted from the semiconductor light emitting element is converted into light of a longer wavelength by incorporating or depositing the fluorescent substance in any part of the semiconductor light emitting element. Then, it can be supplied to the outside.

In FIG. 2, a ZnSe-based semiconductor light emitting device has been described as an example, but the present invention is not limited to this. That is, the present invention can be similarly applied to various other semiconductor light emitting devices such as SiC-based, ZnS-based, and BN-based. That is, these semiconductor light emitting elements can also emit light with high efficiency in a short wavelength region such as blue, and the wavelength of the light in the short wavelength region is converted by a fluorescent substance to extract visible light or infrared light to the outside. Will be able to do it.

Next, as a second embodiment of the present invention,
The light emitting device equipped with the semiconductor light emitting element according to the present invention as described above will be described with reference to 13 specific examples.

FIG. 3 is a schematic sectional view showing a first semiconductor light emitting device according to this embodiment. The semiconductor light emitting device 100A shown in the figure is a so-called “lead frame type” “LED lamp”. That is, the semiconductor light emitting device 10 or 50 is mounted on the bottom of the cup of the lead frame 110. The p-side electrode and the n-side electrode of the light emitting element are respectively
The lead frames 110 and 120 are connected by wires 130 and 130. Further, the tip of the lead frame is molded and protected by resin 140.

According to the present invention, since the semiconductor light emitting element 10 or 50 contains a fluorescent material, it is possible to assemble the light emitting device by exactly the same process as a general light emitting device containing no fluorescent material. it can. In addition, since the fluorescent material is not contained in the sealing resin, the durability against the temperature change does not deteriorate. Therefore, the reliability can be improved as compared with a light emitting device containing a fluorescent substance in a resin. Further, the emission wavelength of the light emitting layer of the light emitting element is 38.
Even in the case of ultraviolet light of 0 nm or less, since the wavelength is converted to the longer wavelength side by the fluorescent substance before the light is extracted to the outside of the light emitting element, damage to the sealing resin and other mounting members due to the ultraviolet light is reduced. Can be eliminated. Further, even when a semiconductor laser is used as the semiconductor light emitting element, the process of applying a fluorescent substance in the assembling process can be omitted, so that productivity and reliability can be similarly improved. Further, there is no need to provide a cup-shaped envelope for filling a resin containing a fluorescent substance, and productivity is dramatically improved.

Next, a modified example of the semiconductor light emitting device equipped with the semiconductor light emitting element shown in FIG. 1 or 2 will be described. FIG. 4 is a schematic partial cross-sectional view illustrating a second semiconductor light emitting device according to the present embodiment. The semiconductor light emitting device 200A shown in FIG.
D lamp. Here, stem 21
0 indicates that the lead pins 222 and 226 are
20 has a configuration fixed by molding. As the insulating member 220, for example, ceramics or resin can be used. The lead pins 222 and 226 are respectively provided with outer leads 224 and 2
28. The semiconductor light emitting device 10 or 50 is mounted on the top of the lead pin 222. Then, one electrode of the light emitting element is connected to the lead pin 226.
They are connected by wires 230. Further, the light emitting element is molded and protected by the resin 240.

A stem type LE as shown in FIG.
The semiconductor light emitting device 10 according to the present invention is also used in a D lamp.
Alternatively, by mounting 50, various effects as described above with reference to FIG. 3 can be similarly obtained.

FIG. 5 is a schematic sectional view showing a third semiconductor light emitting device according to this embodiment. The semiconductor light emitting device 250A shown in the figure is a so-called “substrate type” “surface mount (SMD) lamp”. That is, in the SMD lamp 250A, the electrode patterns 272 and 274 are formed on the surface of the substrate 260, and the semiconductor light emitting device 10 or 50 according to the present invention is mounted on one of them. Here, as a material of the substrate 260,
For example, a resin such as epoxy or a ceramic such as alumina or glass can be used. The electrodes of the semiconductor light emitting device are connected to the electrode patterns 274 by wires 280. The light emitting element is molded and protected by the resin 290.

In the substrate type SMD lamp 250A as shown in FIG. 5, by mounting the semiconductor light emitting device 10 or 50 according to the present invention, various effects as described above with reference to FIG. 3 can be similarly obtained. it can.

FIG. 6 is a schematic sectional view showing a fourth semiconductor light emitting device according to this embodiment. The semiconductor light emitting device 300A shown in the figure is a so-called “lead frame type” “surface mount (SMD) lamp”. That is, in the SMD lamp 300A, the semiconductor light emitting device 10 or 50 according to the present invention is mounted on the lead frame 310. Here, examples of the material of the lead frame 310 include a metal material such as gold-plated copper. The electrodes of the semiconductor light emitting device are connected to electrode terminals of the lead frame 310 by wires 330. The light emitting element is molded and protected by the resin 340.

Also in the lead frame type SMD lamp 300A as shown in FIG. 6, by mounting the semiconductor light emitting device 10 or 50 according to the present invention, various effects as described above with reference to FIG. Obtainable.

FIG. 7 is a schematic sectional view showing a fifth semiconductor light emitting device according to this embodiment. The semiconductor light emitting device 350A shown in the figure is a so-called “surface emitting type” semiconductor light emitting device. That is, the surface-emitting type device 350A
5, the semiconductor light emitting device 10 or 50 according to the present invention is mounted on lead frames 360 and 362, respectively. Each of the semiconductor light emitting elements is connected to the lead frame by wires 380, 380,... And each semiconductor light emitting element,
The inside of the cup portion of the reflection plate 370 is molded with a resin 390.

The light emitted from each of the semiconductor light emitting elements is reflected by the reflection plate 370 to become planar light.
Can be taken out.

Also in the surface-emitting type semiconductor light emitting device 350A as shown in FIG. 7, by mounting the semiconductor light emitting element 10 or 50 according to the present invention, various effects as described above with reference to FIG. be able to.

FIG. 8 is a schematic sectional view showing a sixth semiconductor light emitting device according to this embodiment. The semiconductor light emitting device 400A shown in the figure is a so-called “dome type” semiconductor light emitting device. That is, the dome-shaped device 400A
In the above, the lead frame 410 is provided with a plurality of semiconductor light emitting devices 10 or 50 according to the present invention, for example, 5 to 1.
About 0 are mounted on the circumference. Each semiconductor light emitting element is connected to a predetermined terminal of the lead frame 410 via a wire (not shown). Each semiconductor light emitting element is molded with a sealing resin 440.

Such a dome type semiconductor light emitting device 400
A has an advantage that it has high luminance and can take out uniform light because it has a large number of semiconductor light emitting elements.

In a dome-shaped semiconductor light emitting device 400A as shown in FIG.
By mounting 0 or 50, various effects as described above with reference to FIG. 3 can be similarly obtained.

FIG. 9 is a schematic diagram showing a seventh semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 450A shown as a plan view in FIG. 11A and a sectional view in FIG. 10B is a so-called “meter pointer type” semiconductor light emitting device. Such a meter pointer type semiconductor light emitting device 450A is used as a self-luminous type pointer, for example, in an automobile speed meter. In the meter pointer type device 450A according to the present invention, a plurality of, for example, about 5 to 20 semiconductor light emitting elements 10 or 50 according to the present invention are mounted on a predetermined substrate or a lead frame 460 at predetermined intervals. Have been. Each semiconductor light emitting element is connected to a predetermined terminal by a wire (not shown). Each semiconductor light emitting element is molded with a sealing resin 490. The meter pointer type device 450A is attached to, for example, a shaft of a speedometer by an attachment flange 466.

Such a meter pointer type semiconductor light emitting device 4
The 50A is small and lightweight, and has a large number of semiconductor light-emitting elements. Therefore, the 50A has the advantages of high luminance and uniform light extraction.

Also in the meter pointer type semiconductor light emitting device 450A as shown in FIG. 9, by mounting the semiconductor light emitting element 10 or 50 according to the present invention, various effects as described above with reference to FIG. Can be.

By arranging semiconductor light emitting elements having different emission colors, it is easy to provide a distribution of emission colors on the hands. Even in such a case, according to the present invention, it is only necessary to change the kind of the phosphor contained in the semiconductor light emitting element to be used, and the material and structure of the semiconductor element can be made the same. The voltage is
There is also the advantage that they can be common.

FIG. 10 is a schematic diagram showing an eighth semiconductor light emitting device according to this embodiment. The semiconductor light-emitting device 500A shown in the figure is a so-called “seven-segment type” semiconductor light-emitting device, and among them, a semiconductor light-emitting device particularly referred to as a “substrate type”. The seven-segment light-emitting device is a light-emitting device that displays a number. FIG. 1A is an overall perspective view, and FIG. 1B is a partially transparent perspective view. The “substrate type” includes a “hollow type” shown in a cross-sectional view in FIG. 3C and a “resin-sealed type” shown in a cross-sectional view in FIG. Each type is a type in which the semiconductor light emitting element 10 or 50 is mounted on a substrate 510. The “hollow type” is a “resin-sealed type” where the periphery of the semiconductor light emitting element is hollow
, The periphery of the semiconductor light emitting element is sealed with a resin 540.

In each device, the electrode of the semiconductor light emitting element 10 or 50 is connected to a predetermined terminal by a wire 530. Light emitted from the semiconductor light-emitting element is reflected by the reflector 520 and can be extracted outside. In addition, a color filter 544 and a light diffusion film 548 may be provided at the light extraction portion, if necessary.
You may provide etc.

In the seven-segment type semiconductor light emitting device 500A as shown in FIG. 10, by mounting the semiconductor light emitting element 10 or 50 according to the present invention, various effects as described above with reference to FIG. Can be.

FIG. 11 is a schematic diagram showing a ninth semiconductor light emitting device according to the present embodiment. The semiconductor light-emitting device 550A shown in the figure is also a so-called “seven-segment type” semiconductor light-emitting device, and particularly shows a cross section of a main part of a so-called “lead frame type”. is there. That is, the semiconductor light emitting layer 10 or 50 according to the present invention is mounted on the lead frame 560,
Predetermined wiring is provided by wires 580. Also,
The semiconductor light emitting element is sealed with a resin 590. The light emitted from the semiconductor light emitting device is reflected by a reflector 570.
And can be extracted to the outside.

In the seven-segment type semiconductor light emitting device 550A as shown in FIG. 11, by mounting the semiconductor light emitting element 10 or 50 according to the present invention, various effects as described above with reference to FIG. Can be.

FIG. 12 is a schematic diagram showing a tenth semiconductor light emitting device according to the present embodiment. That is, FIG.
The semiconductor light emitting device 600A shown as a plan view in FIG. 3 and a sectional view in FIG. 4B is a so-called “level meter type” semiconductor light emitting device. Such a level meter type device 600A is used, for example, as a level meter that displays the speed of a car and the number of engine revolutions.
In the level meter type device 600A according to the present invention, a plurality of semiconductor light emitting devices 10 or 50, for example, 10 to 3 according to the present invention are provided on a predetermined substrate or a lead frame 610 fixed to the mounting flange 602.
About 0 are mounted at predetermined intervals. Here, in many cases, the emission color changes stepwise or continuously according to the position of the light emitting element to be turned on.
Semiconductor light emitting elements having different emission colors are sequentially mounted. Each of the semiconductor light emitting elements is connected to a predetermined terminal by a wire (not shown). Each semiconductor light emitting element is molded with a resin 640.

Also in the level meter type semiconductor light emitting device 600A as shown in FIG. 12, by mounting the semiconductor light emitting element 10 or 50 according to the present invention, various effects as described above with reference to FIG. 3 can be similarly obtained. be able to.

Further, in such a level meter type semiconductor light emitting device, it is often necessary to arrange semiconductor light emitting elements having different emission colors, but according to the present invention, the change of the emission color is included in the semiconductor light emitting elements. It is only necessary to change the kind of phosphor to be used, and the material and structure of the semiconductor element can be the same, so that there is also an advantage that the drive current, supply voltage, element size, etc. can be made common. .

FIG. 13 is a schematic diagram showing an eleventh semiconductor light emitting device according to this embodiment. That is, FIG.
The semiconductor light emitting device 650A shown as a perspective view in FIG. 2 and a sectional view in the main part in FIG. 2B is a so-called “matrix type” semiconductor light emitting device. Such a matrix type device 650A has a light emitting portion 652 in which semiconductor light emitting elements are arranged in a vertical and horizontal matrix, as shown in FIG.
Symbols or other figures can be displayed.

The matrix type light emitting device 650 according to the present invention.
FIG. 13A shows the substrate 66 as shown in the sectional view of FIG.
The semiconductor light emitting device 10 or 50 according to the present invention is mounted on the reference numeral 0 and connected to a predetermined terminal by a wire (not shown). The semiconductor light emitting element is sealed with a resin 690. Light emitted from the semiconductor light emitting element is reflected by the reflection plate 670 and can be extracted outside. If necessary, the color filter 692
Alternatively, a light diffusion film 694 can be provided.

Also in the matrix type semiconductor light emitting device 650A as shown in FIG. 13, by mounting the semiconductor light emitting element 10 or 50 according to the present invention, various effects as described above with reference to FIG. 3 can be similarly obtained. it can.

According to the present invention, even when it is necessary to arrange semiconductor light emitting elements having different emission colors in such a matrix type semiconductor light emitting device, the change of the emission color is included in the semiconductor light emitting elements. It is only necessary to change the type of the phosphor, and the materials and structures of the semiconductor elements can be the same. Therefore, there is an advantage that the drive current, the supply voltage, the element size, and the like can be made common. Further, there is an advantage that color variation between the same colors is small.

FIG. 14 is a schematic diagram showing a twelfth semiconductor light emitting device according to the present embodiment. The semiconductor light emitting device 700A shown as an assembly diagram in FIG.
And is used for a light source unit such as a facsimile (FAX) or a scanner. In such an array-type device 700A, a rail-shaped reflecting plate 722 is provided on a substrate 720, and the semiconductor light-emitting elements 10 or 50 according to the present invention are linearly arranged therebetween. A partition plate 724 is provided between each semiconductor light emitting element.
Is provided. In addition, a rod
A lens 740 is provided so that light from each light emitting element can be collected and extracted to the outside.

In the array type semiconductor light emitting device 700A as shown in FIG.
By mounting 0 or 50, various effects as described above with reference to FIG. 3 can be similarly obtained. Another advantage is that there is little variation in color between the same colors.

According to the present invention, even when it is necessary to arrange semiconductor light emitting elements having different emission colors in such an array type semiconductor light emitting device, the change of the emission color is included in the semiconductor light emitting elements. It is only necessary to change the type of the phosphor, and the materials and structures of the semiconductor elements can be the same. Therefore, there is an advantage that the drive current, the supply voltage, the element size, and the like can be made common.

FIG. 15 is a schematic diagram showing a thirteenth semiconductor light emitting device according to this embodiment. The semiconductor light emitting device 750A shown as a cross-sectional view in the same drawing is a semiconductor light emitting device called a so-called “can-type laser”. In such a can type laser 750A, the semiconductor light emitting device 10 or 50 according to the present invention is linearly arranged at the tip of the stem 770. Here, the semiconductor light emitting device 10 or 50 is a laser device. A light receiving element 775 for monitoring is arranged on the back side of the semiconductor light emitting element so that the light output of the semiconductor light emitting element 10 or 50 can be monitored. The head of the stem 770 is
The laser light is sealed by a reference numeral 0, and the laser light can be extracted to the outside through an extraction window 792.

Also in the can-type laser semiconductor light emitting device 750A as shown in FIG. 15, by mounting the semiconductor light emitting element 10 or 50 according to the present invention, various effects as described above with reference to FIG. Can be.

As described above, the first embodiment of the present invention relates to a semiconductor light emitting device containing a phosphor appropriately, and the second embodiment of the present invention relates to a semiconductor light emitting device equipped with such a semiconductor light emitting device. Each of the examples has been described. Next, a third embodiment of the present invention will be described. In the present embodiment, after mounting the semiconductor light emitting element on the mounting member, a fluorescent substance is deposited by a predetermined method. FIG. 16 is a schematic view illustrating the semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 100B in the figure is a lead frame type LED lamp. In the present embodiment, the semiconductor light emitting device 990 is mounted on the lead frame 110, and thereafter, a phosphor is deposited on the surface of the semiconductor light emitting device 990 to form the phosphor layer FL.

Here, as the semiconductor light emitting device 990,
It does not need to contain a fluorescent substance. However, in order to obtain high wavelength conversion efficiency with many fluorescent materials which are usually obtained, it is desirable that the semiconductor light emitting device has high luminance in a blue region or an ultraviolet region having a shorter wavelength. As such a semiconductor light emitting device, for example, as described with reference to FIG. 1 and FIG.
A light-emitting element using a semiconductor material such as a GaN-based material, a ZnSe-based material, a SiC-based material, a ZnS-based material, or a BN-based material as a light-emitting layer can be given.

As a method of depositing a fluorescent substance, a method of dispersing a fluorescent substance in a predetermined solvent, applying the fluorescent substance to the surface of the semiconductor light emitting element 990 and drying the same, and a method of applying a predetermined solvent to the surface of the semiconductor light emitting element 990. After that, there is a method of spraying or spraying the phosphor and drying.

The solvent is preferably one having adhesiveness or tackiness. Specifically, for example, those containing an inorganic polymer as a main component, those containing a rubber-based organic substance as a main component, and those containing a starch or protein as a main component can be used. Here, the use of an inorganic solvent is advantageous in that heat resistance and chemical resistance are high and incombustibility is also obtained. Further, when a rubber, starch or protein is used, the stress after drying is relaxed, which is advantageous in that deterioration of the element due to residual stress of the solvent and defects such as wire disconnection can be prevented. It is. Also,
Starch and proteins also have the advantage of being easy to handle because they have water solubility.

As the solvent, specifically, for example, an alkali silicate aqueous solution, a silicate colloid chair solution, a phosphate aqueous solution,
Examples thereof include a silicate compound-dissolving organic solvent, a rubber-containing organic solvent, and a natural glue aqueous solution.

Further, these solvents may have a light refractive index after drying and solidification having a value between the light refractive index of the light emitting portion of the semiconductor light emitting element and the light refractive index outside thereof. desirable. For example, when the semiconductor light emitting element is sealed with a resin, the light refractive index of the solidified solvent is a value between the light refractive index of the light emitting portion of the semiconductor light emitting element and the light refractive index of the resin. It is desirable to do so. This is because, in this way, by preventing total reflection in the light extraction section, the extraction efficiency can be improved.

On the other hand, as the fluorescent substance used in the present embodiment, various inorganic fluorescent substances and organic fluorescent substances as described in the first embodiment can be appropriately selected and used. At the time of the selection, in relation to the emission wavelength of the semiconductor light emitting element to be used and the wavelength of the desired extracted light,
It is desirable to select a fluorescent substance having a high wavelength conversion efficiency.

According to the present embodiment, since the phosphor layer FL is deposited on the light emitting portion of the semiconductor light emitting device 990, light emitted from the light emitting device is absorbed by the fluorescent material with an efficiency close to 100%. , Wavelength conversion. In particular, it is effective when the light emitting element emits ultraviolet light having a wavelength of 380 nm or less.

In this embodiment, the light source is limited to the vicinity of the light emitting portion of the light emitting device. Therefore, the light path through which the light from the light emitting element passes through the inside of the phosphor layer FL is substantially constant without depending on the direction of the light, and the conversion efficiency becomes uniform. As a result, the problem that the wavelength of the light extracted from the light emitting device changes depending on the direction is solved.

Further, in this embodiment, since the light source is limited to the vicinity of the light emitting portion of the light emitting element, it is easy to collect light using a lens or a reflector and realize a semiconductor light emitting device with high luminance. Can be. In particular, by using an inorganic polymer, rubber, starch, or protein-based solvent having a large deposition shrinkage rate during curing as a solvent for dispersing the fluorescent substance, the fluorescent layer FL is formed in the vicinity of the light emitting portion of the semiconductor light emitting device. It is easy to limit to only this, and the effect of the present embodiment can be further improved.

Further, in the present embodiment, the light extraction efficiency from the semiconductor light emitting device is further increased by selecting the optical refractive index of the solvent to be a value between the semiconductor light emitting device and an adjacent material. It is possible to provide an improved and high-output semiconductor light emitting device.

Hereinafter, a specific example of the semiconductor light emitting device according to the present embodiment will be described with reference to the drawings. In the specific examples described below, the same portions as those described above are denoted by the same reference numerals, and description thereof will be omitted.

FIG. 17 is a schematic view showing a second semiconductor light emitting device according to the present embodiment. The semiconductor light emitting device 200B shown as a sectional view in the same drawing is a so-called stem type LED lamp. In the present embodiment, the semiconductor light emitting device 990 is mounted on the stem 210, and the phosphor layer FL is deposited thereon from any of the above-described methods. Here, when depositing the phosphor layer FL, even if the phosphor is dispersed in a solvent in advance,
You may spray it later.

FIG. 18 is a schematic diagram showing a third semiconductor light emitting device according to the present embodiment. A semiconductor light emitting device 250B shown as a cross-sectional view in FIG.
MD lamp. In the present embodiment, the substrate 260
The semiconductor light emitting element 990 is mounted on the substrate, and the phosphor layer FL is deposited thereon from any of the above-described methods.

FIG. 19 is a schematic diagram showing a fourth semiconductor light emitting device according to the present embodiment. The semiconductor light emitting device 300B shown as a cross-sectional view in the same drawing is a so-called lead frame type SMD lamp. In this embodiment, the semiconductor light emitting device 99 is mounted on the lead frame 310.
No. 0 is mounted, and a fluorescent material layer FL is deposited thereon by any of the methods described above.

FIG. 20 is a schematic diagram showing a fifth semiconductor light emitting device according to the present embodiment. The semiconductor light emitting device 350B shown as a cross-sectional view in the same drawing is a so-called surface emitting type semiconductor light emitting device. In the present embodiment, the stem 36
The semiconductor light emitting element 990 is mounted on the light emitting elements 0 and 362, and the fluorescent material layer FL is deposited thereon from any of the above-described methods.

FIG. 21 is a schematic diagram showing a sixth semiconductor light emitting device according to the present embodiment. The semiconductor light emitting device 400B shown as a cross-sectional view in the same drawing is a so-called dome-shaped semiconductor light emitting device. In the present embodiment, the stem 410
A plurality of semiconductor light-emitting elements 990 are mounted on the substrate, and a phosphor layer FL is deposited thereon from any of the above-described methods.

FIG. 22 is a schematic diagram showing a seventh semiconductor light emitting device according to this embodiment. The semiconductor light emitting device 450B shown as a cross-sectional view in the same drawing is a so-called meter pointer type semiconductor light emitting device. In the present embodiment, a plurality of semiconductor light emitting elements 990 are mounted on a substrate or a lead frame 460, and a fluorescent material layer FL is deposited thereon from any of the above-described methods.

FIG. 23 is a schematic diagram showing an eighth semiconductor light emitting device according to the present embodiment. The semiconductor light emitting device 500B shown as a cross-sectional view in FIG.
This is a segment-type semiconductor light emitting device, in which (a) shows a “hollow type” and (b) shows a “resin-sealed type”.
In the present embodiment, the semiconductor light emitting device 990 is mounted on the substrate 510, and the phosphor layer FL is deposited thereon from any of the above-described methods.

FIG. 24 is a schematic view showing a ninth semiconductor light emitting device according to this embodiment. The semiconductor light emitting device 550B shown as a cross-sectional view in the same drawing is a so-called lead frame type seven-segment semiconductor light emitting device. In this embodiment, the semiconductor light emitting device 990 is mounted on the lead frame 560, and the fluorescent material layer FL is deposited thereon from any of the above-described methods.

FIG. 25 is a schematic diagram showing a tenth semiconductor light emitting device according to the present embodiment. The semiconductor light emitting device 650B shown as a cross-sectional view in the same drawing is a so-called matrix type semiconductor light emitting device. In the present embodiment, a plurality of semiconductor light emitting elements 990 are mounted on a substrate 660, and a fluorescent material layer FL is deposited thereon from any of the above-described methods.

FIG. 26 is a schematic view showing an eleventh semiconductor light emitting device according to this embodiment. A semiconductor light emitting device 750B shown as a cross-sectional view in the same drawing is a semiconductor light emitting device as a so-called can type laser. In the present embodiment, a semiconductor light emitting element 990 as a laser is mounted on the tip of the stem 770, and a fluorescent material layer FL is deposited thereon from any of the above-described methods.

The specific example of the third embodiment of the present invention has been described with reference to FIGS. In any of the specific examples described above, the various effects described above with reference to FIG. 16 can be similarly obtained.

Next, a fourth embodiment of the present invention will be described. In the present embodiment, a semiconductor light emitting device capable of wavelength conversion with high efficiency is provided by appropriately disposing a fluorescent substance in a resin portion of the semiconductor light emitting device.

FIG. 27 is a schematic view illustrating the semiconductor light emitting device according to the present embodiment. That is, the semiconductor light-emitting device 250C shown as a cross-sectional view in the same drawing is a so-called substrate type SMD lamp. Then, in the example shown in FIG. 9A, a fluorescent substance is mixed in the entire sealing resin 290.

Further, in the example shown in FIG.
Near the surface layer of the sealing resin 290, a layer 290A in which a fluorescent substance is mixed at a particularly high concentration is formed. in this way,
As a method of mixing the fluorescent substance at a high concentration near the surface layer of the resin, for example, when the semiconductor light emitting element 990 is sealed with a resin containing the fluorescent substance, the fluorescent substance is not cured until the resin is cured. A method in which a substance is precipitated to form a layer containing a fluorescent substance at a high concentration in the vicinity of a surface layer can be given. At this time, depending on the degree of precipitation of the fluorescent substance,
The distribution state of the fluorescent substance can be adjusted. That is, if the precipitate is completely precipitated, it is possible to obtain the same configuration as that in which the fluorescent substance is applied to the surface portion of the resin as described below.

Next, in the example shown in FIG.
A fluorescent substance-containing layer 290B is uniformly provided around the sealing resin 290. Such a phosphor-containing layer 290B
Can be formed, for example, by using the semiconductor light emitting element 99
After molding the periphery of 0 with a resin not containing a fluorescent substance, apply a resin containing a fluorescent substance to the periphery thereof, or
Alternatively, a lamination molding method can be used.

Here, in any of the above examples,
The semiconductor light emitting device 990 does not need to contain a fluorescent substance. However, in order to obtain high wavelength conversion efficiency by using many fluorescent substances which are usually obtained, it is desirable that the semiconductor light emitting element has a high luminance in a blue region or an ultraviolet region having a shorter wavelength. As such a semiconductor light emitting device, for example, a GaN-based, ZnSe-based, SiC-based,
A light-emitting element in which a semiconductor material such as a ZnS-based or BN-based material is used for a light-emitting layer can be given.

On the other hand, as the fluorescent substance used in the present embodiment, various inorganic fluorescent substances and organic fluorescent substances as described in the first embodiment can be appropriately selected and used. At the time of the selection, in relation to the emission wavelength of the semiconductor light emitting element to be used and the wavelength of the desired extracted light,
It is desirable to select a fluorescent substance having a high wavelength conversion efficiency.

In this embodiment, since the fluorescent material is contained in the resin of the semiconductor light emitting device by a predetermined method, the emission can be made polychromatic, the variation of the emission wavelength can be suppressed, and the shift of the emission wavelength due to heat generation can be achieved. Can also be suppressed.

Further, by using an ultraviolet light emitting element having an emission wavelength of 380 nm or less, which is the most efficient for a GaN-based material, a semiconductor light emitting device with extremely high efficiency can be realized.

In particular, according to the present embodiment, it is possible to realize a white light emitting SMD lamp which is very small and easy to mount. In the conventional SMD lamp, it is necessary to separately mix a light scattering agent or the like into the sealing resin to improve the uniformity of light emission in order to improve the appearance. However, there is a disadvantage that the luminance is reduced by the light absorption of such a light scattering agent. On the other hand, according to the present embodiment, the fluorescent substance to be mixed also serves as a light scattering agent, so that a bright and attractive SMD lamp can be realized.

In the examples shown in FIGS. 27B and 27C, the fluorescent substance can be distributed at a high concentration near the surface of the resin. Therefore, the wavelength of the light from the light emitting element 990 can be uniformly converted with high efficiency.

Hereinafter, a specific example of the semiconductor light emitting device according to the present embodiment will be described with reference to the drawings. In the specific examples described below, the same portions as those described above are denoted by the same reference numerals, and description thereof will be omitted.

FIG. 28 is a schematic view illustrating the second semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 300C shown as a cross-sectional view in the same drawing is a so-called lead frame type SMD lamp. Then, in the example shown in FIG.
Is mixed with a fluorescent substance. Also, FIG.
In the example shown in (1), a layer 340A in which a fluorescent substance is mixed at a particularly high concentration is formed near the surface layer of the sealing resin 340. As described above, as a method of mixing the fluorescent substance at a high concentration near the surface layer of the resin, for example, when the semiconductor light emitting element 990 is sealed with the resin containing the fluorescent substance, the method until the resin hardens is used. In the meantime, there can be mentioned a method in which the fluorescent substance is precipitated to form a layer containing the fluorescent substance at a high concentration in the vicinity of the surface layer.

Next, in the example shown in FIG.
A fluorescent substance-containing layer 340B is uniformly provided around the sealing resin 340. Such a phosphor-containing layer 340B
Can be formed, for example, by using the semiconductor light emitting element 99
After molding the periphery of 0 with a resin not containing a fluorescent substance, apply a resin containing a fluorescent substance to the periphery thereof, or
Alternatively, a lamination molding method can be used. Further, as described above with reference to FIG. 3B, when the fluorescent substance is completely precipitated and formed, the same configuration as that applied to the resin surface can be obtained.

FIG. 29 is a schematic view illustrating the third semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 350C shown as a sectional view in the same drawing is a so-called surface emitting type semiconductor light emitting device. Then, FIG.
In the example shown in (1), a fluorescent substance is mixed in the entire sealing resin 390. In the example shown in FIG. 3B, a layer 390A in which a fluorescent substance is mixed at a particularly high concentration is formed near the surface layer of the sealing resin 390. Next, in the example shown in FIG.
Is uniformly provided with a phosphor-containing layer 390B. The method of mixing each fluorescent substance can be the same as the method described above with reference to FIG. According to the present embodiment, it is possible to realize a white light emitting surface emitting semiconductor light emitting device which is much brighter and has excellent uniformity as compared with the related art.

FIG. 30 is a schematic view illustrating the fourth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 400C shown as a cross-sectional view in the same drawing is a so-called dome-shaped semiconductor light emitting device. Then, FIG.
In the example shown in (1), a fluorescent substance is mixed in the entirety of the sealing resin 440. Further, in the example shown in FIG. 4B, a layer 440A in which a fluorescent substance is mixed at a particularly high concentration is formed near the surface layer of the sealing resin 440. Next, in the example shown in FIG.
Is uniformly provided with a phosphor-containing layer 440B. The method of mixing each fluorescent substance can be the same as the method described above with reference to FIG. According to the present embodiment, a dome-shaped semiconductor light-emitting device that emits white light, which is much brighter and has excellent uniformity as compared with the related art, can be realized.

FIG. 31 is a schematic view illustrating the fifth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 450C shown as a cross-sectional view in the same drawing is a so-called meter pointer type semiconductor light emitting device. Then, in the example shown in FIG. 9A, a fluorescent substance is mixed in the entire sealing resin 490. Further, in the example shown in FIG. 9B, a layer 490A in which a fluorescent substance is mixed at a particularly high concentration is formed near the surface layer of the sealing resin 490. Next, in the example shown in FIG. 9C, the fluorescent substance containing layer 490B is provided uniformly around the sealing resin 490. The method of mixing each fluorescent substance can be the same as the method described above with reference to FIG. According to the present embodiment, it is possible to realize a white light emitting meter pointer type semiconductor light emitting device which is much brighter and has excellent uniformity as compared with the related art. In particular, when used as a pointer when the background is a black panel, such as for a vehicle, the contrast is higher than that of red, blue, etc., and it is optimal for use at night.

FIG. 32 is a schematic view illustrating the sixth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 500C shown as a cross-sectional view in the same drawing is a so-called substrate-type seven-segment semiconductor light emitting device. Then, in the example shown in FIG.
0 is mixed with a fluorescent substance. Further, in the example shown in FIG. 5B, a layer 540A in which a fluorescent substance is mixed at a particularly high concentration is formed near the surface layer of the sealing resin 540. Next, in the example shown in FIG. 9C, the fluorescent material containing layer 540B is provided uniformly around the sealing resin 540. The method of mixing each fluorescent substance can be the same as the method described above with reference to FIG. According to the present embodiment, a seven-segment semiconductor light emitting device that emits white light, which is much brighter and has excellent uniformity, compared to the related art, can be realized.

FIG. 33 is a schematic view illustrating the seventh semiconductor light emitting device according to the present embodiment. That is, the semiconductor light-emitting device 550C shown as a cross-sectional view in the same drawing is a so-called lead frame type seven-segment semiconductor light-emitting device. Then, in the example shown in FIG. 9A, a fluorescent substance is mixed in the entire sealing resin 590. Further, in the example shown in FIG. 9B, a layer 590A in which a fluorescent substance is mixed at a particularly high concentration is formed near the surface layer of the sealing resin 590. Next, in the example shown in FIG. 9C, the fluorescent substance containing layer 590B is provided uniformly around the sealing resin 590. The method of mixing each fluorescent substance can be the same as the method described above with reference to FIG. According to the present embodiment, a seven-segment semiconductor light emitting device that emits white light, which is much brighter and has excellent uniformity, compared to the related art, can be realized. Furthermore, according to the present embodiment, since light is emitted near the surface of the light emitting device, there is an advantage that a wide viewing angle can be secured.

FIG. 34 is a schematic view illustrating the eighth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 650C shown as a sectional view in the same drawing is a so-called matrix type semiconductor light emitting device. Then, in the example shown in FIG. 9A, a fluorescent substance is mixed in the entire sealing resin 690. Further, in the example shown in FIG. 9B, a layer 690A in which a fluorescent substance is mixed at a particularly high concentration is formed near the surface layer of the sealing resin 690. Next, in the example shown in FIG. 9C, the fluorescent substance containing layer 690B is provided uniformly around the sealing resin 690. The method of mixing each fluorescent substance can be the same as the method described above with reference to FIG. According to the present embodiment, it is possible to realize a dot-matrix semiconductor light-emitting device that emits white light, which is much brighter and has excellent uniformity as compared with the related art. In the case of performing full-color image display in which RGB pixels are formed, for example, only one kind of light emitting element of an ultraviolet light emitting type can be used, and the light emitting elements can be divided into RGB pixels according to the kind of fluorescent substance. And the assembling process can be simplified. Further, when the semiconductor light emitting elements are mounted at a high density, the amount of heat generated increases. However, even in such a case, since the conversion characteristics of the phosphor are stable, there is an advantage that the emission wavelength does not fluctuate. Furthermore, according to the present embodiment, since light is emitted near the surface of the light emitting device, there is an advantage that a wide viewing angle can be secured.

In the above, a specific example of the fourth embodiment of the present invention has been described with reference to FIGS. In any of the specific examples described above, the various effects described above with reference to FIG. 27 can be obtained similarly.

Next, a fifth embodiment of the present invention will be described. In the present embodiment, by providing a cavity inside the sealing resin of the semiconductor light emitting device and arranging a fluorescent substance on the inner wall surface thereof, it is possible to stabilize the wavelength conversion efficiency and realize a high-luminance semiconductor light emitting device. it can.

FIG. 35 is a schematic view illustrating the semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 100D shown as a cross-sectional view in FIG. 1 is a so-called lead frame type LED lamp. Then, the semiconductor light emitting element 990 is mounted on the lead frame 110 and sealed with the resin 140D. Here, in the present embodiment, the cavity 142 is formed inside the resin 140D, and the phosphor layer FL is provided on the inner wall surface of the cavity 142.

Here, the semiconductor light emitting device 990 does not need to contain a fluorescent substance. However, in order to obtain high wavelength conversion efficiency with many fluorescent materials which are usually obtained, it is desirable that the semiconductor light emitting device has high luminance in a blue region or an ultraviolet region having a shorter wavelength. As such a semiconductor light emitting device,
For example, GaN as described with reference to FIGS.
A light-emitting element in which a semiconductor material such as a ZnSe-based, ZnSe-based, SiC-based, ZnS-based, or BN-based material is used for a light-emitting layer can be given.

As the fluorescent substance used in the present embodiment, various inorganic fluorescent substances and organic fluorescent substances as described in the first embodiment can be appropriately selected and used. At the time of the selection, in relation to the emission wavelength of the semiconductor light emitting element to be used and the wavelength of the desired extracted light,
It is desirable to select a fluorescent substance having a high wavelength conversion efficiency. It is also desirable to select one that is effectively excited by light of a wavelength other than the visible light region. This is because when a fluorescent substance excited by visible light is used, so-called "color mixing" occurs when the semiconductor light emitting devices are arranged in parallel. That is, the fluorescent substance of the semiconductor light emitting device is excited by receiving visible light from the adjacent light emitting device, and may cause unnecessary light emission.

According to the present embodiment, the phosphor layer FL can be uniformly deposited around the semiconductor light emitting device 990 as described above.
%, And the wavelength can be converted by absorption by the fluorescent substance. In particular, it is effective when the light emitting element emits ultraviolet light having a wavelength of 380 nm or less.

Further, according to the present embodiment, since the light from the semiconductor light emitting element 990 is converted in wavelength by the phosphor layer FL and extracted to the outside, the uniformity of the emission wavelength is very good.
In other words, the emission wavelength of the phosphor is constant without depending on the intensity and wavelength of the excitation light, so that the emission wavelength of the semiconductor light emitting device is stable even when the characteristics of the semiconductor light emitting element vary. Further, for the same reason, it is also possible to suppress the variation of the emission wavelength depending on the drive current and the applied voltage.

In this embodiment, the light source is limited to the vicinity of the light emitting element. Therefore, the light path through which the light from the light emitting element passes through the inside of the phosphor layer FL is substantially constant without depending on the direction of the light, and the conversion efficiency becomes uniform. As a result, the problem that the wavelength of the light extracted from the light emitting device changes depending on the direction is solved.

In this embodiment, since the light source can be limited to the vicinity of the light emitting element, the light condensing property by the lens effect is improved, and the light emission intensity can be increased. Such an improvement in light emission intensity is particularly effective for application fields such as traffic lights and outdoor displays. Also, when the cavity 142 in the resin is enlarged, the apparent light source becomes large, so that the uniformity is improved and the appearance is improved, which is particularly effective for applications such as an indicator lamp.

According to the present embodiment, the life of the light emitting device can be prolonged, and the manufacturing cost can be reduced. Furthermore, by using light in the ultraviolet region as the excitation light source, it is possible to eliminate "color mixture" that occurs in the visible light region.

Hereinafter, a specific example of the semiconductor light emitting device according to the present embodiment will be described with reference to the drawings. In the specific examples described below, the same portions as those described above are denoted by the same reference numerals, and description thereof will be omitted.

FIG. 36 is a schematic view illustrating the second semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 200D shown as a cross-sectional view in the same drawing is a so-called stem type LED lamp. Then, a cavity 242 is formed inside the resin 240D, and the cavity 242 is formed.
Is provided with a fluorescent substance deposition layer FL on the inner wall surface.

FIG. 37 is a schematic view illustrating the third semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 250D shown as a cross-sectional view in the same drawing is a so-called substrate type SMD lamp. And the resin 2
A cavity 292 is formed inside 90D, and a fluorescent substance deposition layer FL is provided on the inner wall surface of the cavity 292.

FIG. 38 is a schematic view illustrating the fourth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 350D shown as a cross-sectional view in the same drawing is a so-called surface emitting type semiconductor light emitting device. And the resin 3
A cavity 392 is formed inside 90D, and a fluorescent substance deposition layer FL is provided on the inner wall surface of the cavity 392.

FIG. 39 is a schematic view illustrating the fifth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 400D shown as a cross-sectional view in the same drawing is a so-called dome-shaped semiconductor light emitting device. And the resin 4
A cavity 442 is formed inside 40D, and a fluorescent substance deposition layer FL is provided on the inner wall surface of the cavity 442.

FIG. 40 is a schematic view illustrating the sixth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 500D shown as a cross-sectional view in the same drawing is a so-called substrate type 7-segment semiconductor light emitting device. Then, a cavity 542 is formed inside the resin 540D, and a fluorescent substance deposition layer FL is provided on the inner wall surface of the cavity 542.

The specific example of the fifth embodiment of the present invention has been described with reference to FIGS. In any of the specific examples described above, the various effects described above with reference to FIG. 35 can be obtained similarly.

Next, a sixth embodiment of the present invention will be described. In the present embodiment, a dipping resin layer is provided inside a sealing resin of the semiconductor light emitting device, and a fluorescent substance is contained in the dipping resin layer, thereby stabilizing the wavelength conversion efficiency and realizing a high-luminance semiconductor light emitting device. can do.

FIG. 41 is a schematic view illustrating the semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 100E shown as a cross-sectional view in the same drawing is a so-called lead frame type LED lamp. Then, the semiconductor light emitting device 990 is mounted on the lead frame 110 and sealed with the resin 140E. Here, in the present embodiment, a dipping resin layer 142E is formed inside the resin 140E, and the dipping resin layer 142E contains a fluorescent substance. here,
"Dipping resin" is formed without using a "mold mold" by dropping a resin material dissolved in a solvent with a dispenser or dipping an element in a solution of such a resin material. Refers to resin. That is, in the present embodiment, first, the periphery of the semiconductor light emitting element 990 is sealed with the dipping resin 142E containing a fluorescent substance, and thereafter, the sealing resin 140E
Is molded.

Here, the semiconductor light emitting device 990 does not need to contain a fluorescent substance. However, in order to obtain high wavelength conversion efficiency with many fluorescent materials which are usually obtained, it is desirable that the semiconductor light emitting device has high luminance in a blue region or an ultraviolet region having a shorter wavelength. As such a semiconductor light emitting device,
For example, GaN as described with reference to FIGS.
A light-emitting element in which a semiconductor material such as a ZnSe-based, ZnSe-based, SiC-based, ZnS-based, or BN-based material is used for a light-emitting layer can be given.

As the fluorescent substance used in the present embodiment, various inorganic fluorescent substances and organic fluorescent substances described in the first embodiment can be appropriately selected and used. At the time of the selection, in relation to the emission wavelength of the semiconductor light emitting element to be used and the wavelength of the desired extracted light,
It is desirable to select a fluorescent substance having a high wavelength conversion efficiency. It is also desirable to select one that is effectively excited by light of a wavelength other than the visible light region. This is because when a fluorescent substance excited by visible light is used, so-called "color mixing" occurs when the semiconductor light emitting devices are arranged in parallel. That is, the fluorescent substance of the semiconductor light emitting device is excited by receiving visible light from the adjacent light emitting device, and may cause unnecessary light emission.

According to the present embodiment, the phosphor layer FL can be uniformly deposited around the semiconductor light emitting device 990 as described above, so that light emission from the light emitting device can be reduced by almost 100%.
%, And the wavelength can be converted by absorption by the fluorescent substance. In particular, it is effective when the light emitting element emits ultraviolet light having a wavelength of 380 nm or less.

Further, according to the present embodiment, since the light from the semiconductor light emitting element 990 is converted into a wavelength by the phosphor layer FL and extracted to the outside, the uniformity of the emission wavelength is very good.
In other words, the emission wavelength of the phosphor is constant without depending on the intensity and wavelength of the excitation light, so that the emission wavelength of the semiconductor light emitting device is stable even when the characteristics of the semiconductor light emitting element vary. Further, for the same reason, it is also possible to suppress the variation of the emission wavelength depending on the drive current and the applied voltage.

In this embodiment, the light source is limited to the vicinity of the light emitting element. Therefore, the light path through which the light from the light emitting element passes through the inside of the phosphor layer FL is substantially constant without depending on the direction of the light, and the conversion efficiency becomes uniform. As a result, the problem that the wavelength of the light extracted from the light emitting device changes depending on the direction is solved.

Further, in this embodiment, since the light source can be limited to the vicinity of the light emitting element, the light condensing property by the lens effect is improved, and the light emission intensity can be increased. Such an improvement in light emission intensity is particularly effective for application fields such as traffic lights and outdoor displays. Also, when the cavity 142 in the resin is enlarged, the apparent light source becomes large, so that the uniformity is improved and the appearance is improved, which is particularly effective for applications such as an indicator lamp.

According to the present embodiment, the life of the light emitting device can be prolonged, and the manufacturing cost can be reduced. Furthermore, by using light in the ultraviolet region as the excitation light source, it is possible to eliminate "color mixture" that occurs in the visible light region.

Hereinafter, a specific example of the semiconductor light emitting device according to the present embodiment will be described with reference to the drawings. In the specific examples described below, the same portions as those described above are denoted by the same reference numerals, and description thereof will be omitted.

FIG. 42 is a schematic view illustrating the second semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 200E shown as a cross-sectional view in the same drawing is a so-called stem type LED lamp. Then, a dipping resin layer 242E is formed inside the resin 240E, and the dipping resin layer 242E contains a fluorescent substance.

FIG. 43 is a schematic view illustrating the third semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 250E shown as a cross-sectional view in the same drawing is a so-called substrate type SMD lamp. And the resin 2
A dipping resin layer 292E is formed inside 90E, and the dipping resin layer 292E contains a fluorescent substance.

FIG. 44 is a schematic view illustrating the fourth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 350E shown as a cross-sectional view in the same drawing is a so-called surface emitting type semiconductor light emitting device. And the resin 3
A dipping resin layer 392E is formed inside 90E, and the dipping resin layer 392E contains a fluorescent substance.

FIG. 45 is a schematic view illustrating the fifth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 400E shown as a cross-sectional view in the same drawing is a so-called dome-shaped semiconductor light emitting device. And the resin 4
A dipping resin layer 442E is formed inside 40E, and the dipping resin layer 442E contains a fluorescent substance.

FIG. 46 is a schematic view illustrating the sixth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 500E shown as a cross-sectional view in the same drawing is a so-called substrate type 7-segment semiconductor light emitting device. Then, the dipping resin layer 5 is formed inside the resin 540E.
42E is formed, and the dipping resin layer 542E contains a fluorescent substance.

The concrete example of the sixth embodiment of the present invention has been described with reference to FIGS. In any of the specific examples described above, the various effects described above with reference to FIG. 41 can be obtained similarly.

Next, a seventh embodiment of the present invention will be described. In the present embodiment, the dipping resin layer is provided inside the sealing resin of the semiconductor light emitting device, and the surface of the dipping resin layer is coated with a fluorescent substance, thereby stabilizing the wavelength conversion efficiency, and providing the semiconductor light emitting device with high brightness. Can be realized.

FIG. 47 is a schematic view illustrating the semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 100F shown as a cross-sectional view in the same drawing is a so-called lead frame type LED lamp. Then, the semiconductor light emitting element 990 is mounted on the lead frame 110 and sealed with the resin 140F. Here, in the present embodiment, the dipping resin layer 142F is formed inside the resin 140F, and the surface of the dipping resin layer 142F is coated with the fluorescent material FL. That is, in the present embodiment, first, the periphery of the semiconductor light emitting element 990 is sealed with the dipping resin 142F containing a fluorescent substance, and thereafter, the fluorescent substance FL is applied to the surface of the dipping resin 142F, and then the sealing is performed. The stop resin 140F is formed by molding.

The application of the fluorescent substance can be performed by the same method as described above with reference to FIG. That is, the fluorescent substance layer FL can be formed by dispersing and applying the fluorescent substance in a solvent, or by spraying or spraying the fluorescent substance after applying the solvent. As described above, the solvent is preferably one having adhesiveness or tackiness. Specifically, for example, those containing an inorganic polymer as a main component, those containing a rubber-based organic substance as a main component, and those containing a starch or protein as a main component can be used. More specifically, examples thereof include an alkali silicate aqueous solution, a silicate colloid chair solution, a phosphate aqueous solution, an organic solvent dissolving a silicate compound, an organic solvent containing rubber, and a natural glue aqueous solution.

In this embodiment, the semiconductor light emitting device 9
90 need not contain a fluorescent material. However, in order to obtain high wavelength conversion efficiency with many fluorescent materials which are usually obtained, it is desirable that the semiconductor light emitting device has high luminance in a blue region or an ultraviolet region having a shorter wavelength. As such a semiconductor light emitting device, for example, a GaN-based, ZnSe-based, SiC-based, ZnS-based,
A light-emitting element using a semiconductor material such as a BN-based material for the light-emitting layer can be given.

Also, in the present embodiment, as the fluorescent substance to be used, various inorganic fluorescent substances and organic fluorescent substances as described in the first embodiment can be appropriately selected and used. In the selection, it is desirable to select a fluorescent substance having a high wavelength conversion efficiency in the relationship between the emission wavelength of the semiconductor light emitting element to be used and the wavelength of the desired extracted light. It is also desirable to select one that is effectively excited by light of a wavelength other than the visible light region. This is because when a fluorescent substance excited by visible light is used, so-called "color mixing" occurs when the semiconductor light emitting devices are arranged in parallel. That is, the fluorescent substance of the semiconductor light emitting device is excited by receiving visible light from the adjacent light emitting device, and may cause unnecessary light emission.

According to the present embodiment, since it is not necessary to include a fluorescent substance in the dipping resin, deterioration of the resin due to mixing of the fluorescent substance can be solved. In addition, since the phosphor layer FL can be uniformly deposited around the semiconductor light emitting element 990, the light emitted from the light emitting element can be absorbed by the fluorescent substance at an efficiency close to 100% and the wavelength can be converted. In particular, the emission wavelength of the light emitting element is 38
This is effective for ultraviolet light of 0 nm or less.

Further, according to the present embodiment, the light from the semiconductor light emitting element 990 is converted in wavelength by the phosphor layer FL and is extracted to the outside, so that the uniformity of the emission wavelength is very good.
In other words, the emission wavelength of the phosphor is constant without depending on the intensity and wavelength of the excitation light, so that the emission wavelength of the semiconductor light emitting device is stable even when the characteristics of the semiconductor light emitting element vary. Further, for the same reason, it is also possible to suppress the variation of the emission wavelength depending on the drive current and the applied voltage.

Further, in this embodiment, the light source is limited to the vicinity of the light emitting element. Therefore, the light path through which the light from the light emitting element passes through the inside of the phosphor layer FL is substantially constant without depending on the direction of the light, and the conversion efficiency becomes uniform. As a result, the problem that the wavelength of the light extracted from the light emitting device changes depending on the direction is solved.

In the present embodiment, the light source can be limited to the vicinity of the light emitting element, so that the light condensing property by the lens effect is improved, and the light emission intensity can be increased. Such an improvement in light emission intensity is particularly effective for application fields such as traffic lights and outdoor displays. Also, when the cavity 142 in the resin is enlarged, the apparent light source becomes large, so that the uniformity is improved and the appearance is improved, which is particularly effective for applications such as an indicator lamp.

Further, according to the present embodiment, the life of the light emitting device can be extended, and the manufacturing cost can be reduced. Furthermore, by using light in the ultraviolet region as the excitation light source, it is possible to eliminate "color mixture" that occurs in the visible light region.

Hereinafter, a specific example of the semiconductor light emitting device according to the present embodiment will be described with reference to the drawings. In the specific examples described below, the same portions as those described above are denoted by the same reference numerals, and description thereof will be omitted.

FIG. 48 is a schematic view illustrating the second semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 200F shown as a cross-sectional view in the same drawing is a so-called stem type LED lamp. Then, a dipping resin layer 242F is formed inside the resin 240F, and the fluorescent substance FL is applied on the surface of the dipping resin layer 242F.

FIG. 49 is a schematic view illustrating the third semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 250F shown as a cross-sectional view in the same drawing is a so-called substrate type SMD lamp. And the resin 2
Dipping resin layer 292F is formed inside 90F, and fluorescent material FL is applied on the surface of dipping resin layer 292F.

FIG. 50 is a schematic view illustrating the fourth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 350F shown as a cross-sectional view in the same drawing is a so-called surface emitting type semiconductor light emitting device. And the resin 3
A dipping resin layer 392E is formed inside 90F, and the surface of the dipping resin layer 392F contains a fluorescent substance FL.

FIG. 51 is a schematic view illustrating the fifth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 400F shown as a cross-sectional view in the same drawing is a so-called dome-shaped semiconductor light emitting device. And the resin 4
A dipping resin layer 442E is formed inside 40F, and the surface of the dipping resin layer 442F contains a fluorescent substance FL.

FIG. 52 is a schematic view illustrating the sixth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 500F shown as a cross-sectional view in the same drawing is a so-called substrate type 7-segment semiconductor light emitting device. Then, the dipping resin layer 5 is formed inside the resin 540F.
42F is formed, and the surface of the dipping resin layer 542F contains the fluorescent substance FL.

The specific example of the seventh embodiment of the present invention has been described with reference to FIGS. In any of the above-described specific examples, the various effects described above with reference to FIG. 47 can be obtained similarly.

Next, an eighth embodiment of the present invention will be described. In the present embodiment, in the envelope of the semiconductor light emitting device, the lead frame, the stem, or the substrate contains a fluorescent substance to convert the wavelength of light from the semiconductor light emitting element with high efficiency. A semiconductor light-emitting device that can be taken out can be realized.

FIG. 53 is a schematic view illustrating the semiconductor light emitting device according to this embodiment. That is, the semiconductor light emitting device 100G shown as a cross-sectional view in the same drawing is a so-called lead frame type LED lamp. Then, the semiconductor light emitting element 990 is mounted on the lead frame 110G and sealed with the resin 140. Here, in the present embodiment, the lead frame 110
G and 120G are mixed with a fluorescent substance, so that the wavelength of light from the semiconductor light emitting element 990 can be converted and extracted outside.

Also in this embodiment, the semiconductor light emitting device 9
90 need not contain a fluorescent material. However, in order to obtain high wavelength conversion efficiency with many fluorescent materials which are usually obtained, it is desirable that the semiconductor light emitting device has high luminance in a blue region or an ultraviolet region having a shorter wavelength. Examples of such a semiconductor light emitting device include, for example, GaN-based, ZnSe-based, ZnSSe-based, and SiC as described with reference to FIGS.
A light-emitting element using a semiconductor material such as a ZnS-based material, a ZnS-based material, or a BN-based material for a light-emitting layer can be given.

Also, in this embodiment, as the fluorescent substance to be used, various inorganic phosphors and organic phosphors as described in the first embodiment can be appropriately selected and used. In the selection, it is desirable to select a fluorescent substance having a high wavelength conversion efficiency in the relationship between the emission wavelength of the semiconductor light emitting element to be used and the wavelength of the desired extracted light. It is also desirable to select one that is effectively excited by light of a wavelength other than the visible light region. This is because when a fluorescent substance excited by visible light is used, so-called "color mixing" occurs when the semiconductor light emitting devices are arranged in parallel. That is, the fluorescent substance of the semiconductor light emitting device is excited by receiving visible light from the adjacent light emitting device, and may cause unnecessary light emission.

According to the present embodiment, the semiconductor light emitting device 99
Since the light from 0 is wavelength-converted by the phosphor and extracted to the outside, the uniformity of the emission wavelength becomes very good. That is,
Since the emission wavelength of the phosphor is constant without depending on the intensity and wavelength of the excitation light, the emission wavelength of the semiconductor light emitting device is stable even when the characteristics of the semiconductor light emitting elements vary. Further, for the same reason, it is also possible to suppress the variation of the emission wavelength depending on the drive current and the applied voltage.

Further, also in this embodiment, the problem that the wavelength of the light extracted from the light emitting device changes depending on the direction can be solved.

Further, according to the present embodiment, the life of the light emitting device can be extended, and the manufacturing cost can be reduced. Furthermore, by using light in the ultraviolet region as the excitation light source, it is possible to eliminate "color mixture" that occurs in the visible light region.

Hereinafter, a specific example of the semiconductor light emitting device according to the present embodiment will be described with reference to the drawings. In the specific examples described below, the same portions as those described above are denoted by the same reference numerals, and description thereof will be omitted.

FIG. 54 is a schematic view illustrating the second semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 200G shown as a cross-sectional view in the same drawing is a so-called stem type LED lamp. The fluorescent material is contained in the insulating member 220G of the stem 210G.

FIG. 55 is a schematic view illustrating the third semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 250G shown as a cross-sectional view in the same drawing is a so-called substrate type SMD lamp. And the substrate 2
60G contains a fluorescent substance.

FIG. 56 is a schematic view illustrating the fourth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 300G shown as a cross-sectional view in the same drawing is a so-called lead frame type SMD lamp. The lead frame 310G contains a fluorescent substance.

FIG. 57 is a schematic view illustrating the fifth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 350G shown as a cross-sectional view in the same drawing is a so-called surface emitting type semiconductor light emitting device. The lead frames 360G and 362G contain a fluorescent substance.

FIG. 58 is a schematic view illustrating the sixth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 400G shown as a cross-sectional view in the same drawing is a so-called dome-shaped semiconductor light emitting device. Then, the lead frame 410G contains a fluorescent substance.

FIG. 59 is a schematic view illustrating the seventh semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 450G shown as a plan view and a sectional view in FIG.
Is a so-called meter pointer type semiconductor light emitting device. The substrate 460G contains a fluorescent substance.

FIG. 60 is a schematic view illustrating the eighth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 500G shown as a cross-sectional view in the same drawing is a so-called substrate type 7 segment type semiconductor light emitting device. Then, the substrate 510G contains a fluorescent substance.
Although the example shown in the figure represents a so-called "hollow type", the present embodiment can be similarly applied to a "resin-sealed type".

FIG. 61 is a schematic view illustrating the ninth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 550G shown as a cross-sectional view in the same drawing is a so-called lead frame type seven-segment semiconductor light emitting device. Then, the lead frame 560G contains a fluorescent substance.

FIG. 62 is a schematic view illustrating the tenth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 650G shown as a cross-sectional view in the same drawing is a so-called matrix type semiconductor light emitting device. Then, the substrate 660G contains a fluorescent substance.

FIG. 63 is a schematic view illustrating the eleventh semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 700G shown as a cross-sectional view in the same drawing is a so-called array type semiconductor light emitting device. Then, a fluorescent substance is contained in the substrate 720G or the reflection plate 722G.

FIG. 64 is a schematic view illustrating the twelfth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 750G shown as a cross-sectional view in the same drawing is a semiconductor light emitting device as a so-called can type laser. The stem 770G contains a fluorescent substance.

The specific example of the eighth embodiment of the present invention has been described with reference to FIGS. In any of the specific examples described above, the various effects described above with reference to FIG. 53 can be similarly obtained.

Next, a ninth embodiment of the present invention will be described. In the present embodiment, in the envelope of the semiconductor light emitting device, by arranging a fluorescent substance in a portion corresponding to the lower side of the semiconductor light emitting element, the wavelength of light from the semiconductor light emitting element is converted with high efficiency to the outside. A semiconductor light-emitting device that can be taken out can be realized. More specifically, a fluorescent substance is arranged on a lead frame, a stem, or a mounting portion of a light emitting element on a substrate.

FIG. 65 is a schematic view illustrating the semiconductor light emitting device according to this embodiment. That is, the semiconductor light emitting device 100H shown as a cross-sectional view in the same drawing is a so-called lead frame type LED lamp. Then, the semiconductor light emitting element 990 is mounted on the lead frame 110 and sealed with the resin 140. here,
In the present embodiment, the phosphor layer FL is disposed between the lead frame 110 and the semiconductor light emitting element 990, and converts the wavelength of the light from the semiconductor light emitting element 990,
It can be taken out.

The method for forming such a fluorescent material layer FL will be described below.

As a first method, the semiconductor light emitting device 99
For example, a method of mixing a fluorescent substance into an adhesive for mounting 0 may be used. Examples of the type of the adhesive include resin, rubber, organic material, inorganic material, starch, protein, tar, and metal solder. Here, the use of an inorganic solvent is advantageous in that heat resistance and chemical resistance are high and incombustibility is also obtained. In addition, when rubber, starch or protein is used, the stress after drying is reduced, and it is possible to prevent defects such as element deterioration and wire disconnection due to residual stress of the adhesive. It is advantageous. In addition, starch and proteins also have the advantage of being easy to handle because they have water solubility.

After a predetermined fluorescent substance is dispersed in these adhesives and applied to the mounting surface of the lead frame, the semiconductor light emitting device 990 is placed and the adhesive is cured, whereby the semiconductor light emitting device 990 is removed. Fluorescent substance layer FL below
Can be provided.

As a second method, there is a method in which a fluorescent substance is applied to the mounting surface of the lead frame, dried, and the semiconductor light emitting element 990 is newly fixed using an adhesive. Here, examples of the solvent for applying the fluorescent substance include various solvents as described above with reference to FIG.

As a third method, the fluorescent material layer FL previously processed into a flat plate (tablet) shape is fixed on the mounting surface of the lead frame with an adhesive or the like, and the semiconductor light emitting element 990 is fixed thereon. Can be mentioned.

In the present embodiment, the semiconductor light emitting element 9
90 need not contain a fluorescent material. However, in order to obtain high wavelength conversion efficiency with many fluorescent materials which are usually obtained, it is desirable that the semiconductor light emitting device has high luminance in a blue region or an ultraviolet region having a shorter wavelength. As such a semiconductor light emitting device, for example, a GaN-based, ZnSe-based, SiC-based, ZnS-based,
A light-emitting element using a semiconductor material such as a BN-based material for the light-emitting layer can be given.

Also, in this embodiment, as the fluorescent substance to be used, various kinds of inorganic phosphors and organic phosphors described in the first embodiment can be appropriately selected and used. In the selection, it is desirable to select a fluorescent substance having a high wavelength conversion efficiency in the relationship between the emission wavelength of the semiconductor light emitting element to be used and the wavelength of the desired extracted light. It is also desirable to select one that is effectively excited by light of a wavelength other than the visible light region. This is because when a fluorescent substance excited by visible light is used, so-called "color mixing" occurs when the semiconductor light emitting devices are arranged in parallel. That is, the fluorescent substance of the semiconductor light emitting device is excited by receiving visible light from the adjacent light emitting device, and may cause unnecessary light emission.

According to the present embodiment, the semiconductor light emitting device 99
Since the light from 0 is converted into a wavelength by the phosphor layer FL and extracted outside, the uniformity of the emission wavelength becomes very good. In other words, the emission wavelength of the phosphor is constant without depending on the intensity and wavelength of the excitation light, so that the emission wavelength of the semiconductor light emitting device is stable even when the characteristics of the semiconductor light emitting element vary. Further, for the same reason, it is also possible to suppress the variation of the emission wavelength depending on the drive current and the applied voltage.

In the present embodiment, the light source is limited to the vicinity of the light emitting element. Therefore, the light path through which the light from the light emitting element passes through the inside of the phosphor layer FL is substantially constant without depending on the direction of the light, and the conversion efficiency becomes uniform. As a result, the problem that the wavelength of the light extracted from the light emitting device changes depending on the direction is solved.

According to the present embodiment, the life of the light emitting device can be prolonged, and the manufacturing cost can be reduced. Furthermore, by using light in the ultraviolet region as the excitation light source, it is possible to eliminate "color mixture" that occurs in the visible light region.

Hereinafter, a specific example of the semiconductor light emitting device according to the present embodiment will be described with reference to the drawings. In the specific examples described below, the same portions as those described above are denoted by the same reference numerals, and description thereof will be omitted.

FIG. 66 is a schematic view illustrating the second semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 200H shown as a cross-sectional view in the same drawing is a so-called stem type LED lamp. Then, the phosphor layer FL is arranged between the stem 210 and the semiconductor light emitting element 990 by any of the methods described above.

FIG. 67 is a schematic view illustrating the third semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 250H shown as a cross-sectional view in the same drawing is a so-called substrate type SMD lamp. And the substrate 2
The fluorescent material layer FL is arranged between the semiconductor light emitting device 60 and the semiconductor light emitting device 990 by any of the methods described above.

FIG. 68 is a schematic view illustrating the fourth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 300H shown as a cross-sectional view in the same drawing is a so-called lead frame type SMD lamp. Then, the lead frame 310H and the semiconductor light emitting element 9
90, the fluorescent material layer FL is arranged by any of the above-described methods.

FIG. 69 is a schematic view illustrating the fifth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 350H shown as a cross-sectional view in the same drawing is a so-called surface emitting type semiconductor light emitting device. Then, the fluorescent material layer FL is provided between the lead frames 360 and 362 and the semiconductor light emitting element 990 by any of the methods described above.
Is arranged.

FIG. 70 is a schematic view illustrating the sixth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 400H shown as a cross-sectional view in the same drawing is a so-called dome-shaped semiconductor light emitting device. The phosphor layer FL is disposed between the lead frame 410 and the semiconductor light emitting device 990 by any of the methods described above.

FIG. 71 is a schematic view illustrating the seventh semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 450H shown as a plan view and a sectional view in FIG.
Is a so-called meter pointer type semiconductor light emitting device. Then, between the substrate 460 and the semiconductor light emitting element 990, the fluorescent material layer FL is arranged by any of the methods described above.

FIG. 72 is a schematic view illustrating the eighth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 500H shown as a cross-sectional view in the same drawing is a so-called substrate type 7-segment semiconductor light emitting device. Then, between the substrate 510 and the semiconductor light emitting element 990, the fluorescent material layer FL is arranged by any of the methods described above. Although the example shown in the figure represents a so-called "hollow type", the present embodiment can be similarly applied to a "resin-sealed type".

FIG. 73 is a schematic view illustrating the ninth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 550H shown as a cross-sectional view in the same drawing is a so-called lead frame type 7 segment type semiconductor light emitting device. Then, the phosphor layer FL is arranged between the lead frame 560 and the semiconductor light emitting element 990 by any of the methods described above.

FIG. 74 is a schematic view illustrating the tenth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 650H shown as a cross-sectional view in the same drawing is a so-called matrix semiconductor light emitting device. Then, between the substrate 660 and the semiconductor light emitting element 990, the fluorescent material layer FL is disposed by any of the methods described above.

FIG. 75 is a schematic view illustrating the eleventh semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 700H shown as a cross-sectional view in the same drawing is a so-called array type semiconductor light emitting device. Then, the phosphor layer FL is arranged between the reflector 722 and the semiconductor light emitting element 990 by any of the methods described above.

FIG. 76 is a schematic view illustrating the twelfth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 750H shown as a cross-sectional view in the same drawing is a semiconductor light emitting device as a so-called can type laser. Then, the phosphor layer FL is arranged between the stem 770 and the semiconductor light emitting element 990 by any of the methods described above.

The specific example of the ninth embodiment of the present invention has been described with reference to FIGS. In any of the specific examples described above, the various effects described above with reference to FIG. 65 can be obtained similarly.

Next, a tenth embodiment of the present invention will be described. In the present embodiment, a semiconductor light emitting device capable of efficiently converting the wavelength of light from a semiconductor light emitting element and extracting the light to the outside by applying a fluorescent substance to a light reflecting surface such as a lead frame of the semiconductor light emitting device. Can be realized.

FIG. 77 is a schematic view illustrating the semiconductor light emitting device according to this embodiment. That is, the semiconductor light emitting device 100I shown as a cross-sectional view in the same drawing is a so-called lead frame type LED lamp. Then, the semiconductor light emitting element 990 is mounted on the lead frame 110 and sealed with the resin 140. here,
In the present embodiment, the phosphor layer FL is formed on the light reflecting surface of the lead frame 110, so that the wavelength of the light from the semiconductor light emitting element 990 can be converted and extracted to the outside. I have.

[0233] Such a fluorescent material layer FL can be formed, for example, by coating. In other words, the fluorescent substance layer FL can be formed by dispersing the fluorescent substance in a solvent, applying and drying the fluorescent substance. Examples of the type of the solvent include resin, rubber, organic material, inorganic material, starch, protein, tar, and metal solder. Here, the use of an inorganic solvent is advantageous in that heat resistance and chemical resistance are high and incombustibility is also obtained. In addition, when rubber, starch or protein is used, the stress after drying is relaxed, which is advantageous in that it is possible to prevent defects such as element degradation and wire disconnection due to residual stress of the solvent. It is. In addition, starch and proteins also have the advantage of being easy to handle because they have water solubility.

In the present embodiment, the semiconductor light emitting element 9
90 need not contain a fluorescent material. However, in order to obtain high wavelength conversion efficiency with many fluorescent materials which are usually obtained, it is desirable that the semiconductor light emitting device has high luminance in a blue region or an ultraviolet region having a shorter wavelength. As such a semiconductor light emitting device, for example, a GaN-based, ZnSe-based, SiC-based, ZnS-based,
A light-emitting element using a semiconductor material such as a BN-based material for the light-emitting layer can be given.

Also in this embodiment, as the fluorescent substance to be used, various inorganic phosphors and organic phosphors as described in the first embodiment can be appropriately selected and used. In the selection, it is desirable to select a fluorescent substance having a high wavelength conversion efficiency in the relationship between the emission wavelength of the semiconductor light emitting element to be used and the wavelength of the desired extracted light. It is also desirable to select one that is effectively excited by light of a wavelength other than the visible light region. This is because when a fluorescent substance excited by visible light is used, so-called "color mixing" occurs when the semiconductor light emitting devices are arranged in parallel. That is, the fluorescent substance of the semiconductor light emitting device is excited by receiving visible light from the adjacent light emitting device, and may cause unnecessary light emission.

According to the present embodiment, the semiconductor light emitting device 99
Since the light from 0 is converted into a wavelength by the phosphor layer FL and extracted outside, the uniformity of the emission wavelength becomes very good. In other words, the emission wavelength of the phosphor is constant without depending on the intensity and wavelength of the excitation light, so that the emission wavelength of the semiconductor light emitting device is stable even when the characteristics of the semiconductor light emitting element vary. Further, for the same reason, it is also possible to suppress the variation of the emission wavelength depending on the drive current and the applied voltage.

Further, in this embodiment, the light source is limited to the vicinity of the light emitting element. Therefore, the light path through which the light from the light emitting element passes through the inside of the phosphor layer FL is substantially constant without depending on the direction of the light, and the conversion efficiency becomes uniform. As a result, the problem that the wavelength of the light extracted from the light emitting device changes depending on the direction is solved.

According to this embodiment, the life of the light emitting device can be prolonged, and the manufacturing cost can be reduced. Furthermore, by using light in the ultraviolet region as the excitation light source, it is possible to eliminate "color mixture" that occurs in the visible light region.

Hereinafter, a specific example of the semiconductor light emitting device according to the present embodiment will be described with reference to the drawings. In the specific examples described below, the same portions as those described above are denoted by the same reference numerals, and description thereof will be omitted.

FIG. 78 is a schematic view illustrating the second semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 200I shown as a cross-sectional view in the same drawing is a so-called stem type LED lamp. Then, a fluorescent material layer FL is applied on the light reflecting surface of the stem 210.

FIG. 79 is a schematic view illustrating the third semiconductor light emitting device according to the present embodiment. That is, the semiconductor light-emitting device 250I shown as a cross-sectional view in the same drawing is a so-called substrate type SMD lamp. And the substrate 2
The fluorescent material layer FL is applied on the 60 light reflecting surfaces.

FIG. 80 is a schematic view illustrating the fourth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 300I shown as a cross-sectional view in the same drawing is a so-called lead frame type SMD lamp. Then, a fluorescent material layer FL is applied on the light reflecting surface of the lead frame 310.

FIG. 81 is a schematic view illustrating the fifth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light-emitting device 350I shown as a cross-sectional view in the same drawing is a so-called surface-emitting semiconductor light-emitting device. Then, a fluorescent material layer FL is applied on the light reflecting plate 370.

FIG. 82 is a schematic view illustrating the sixth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 400I shown as a cross-sectional view in the same drawing is a so-called dome-shaped semiconductor light emitting device. Then, a fluorescent material layer FL is applied on the light reflecting surface of the lead frame 410.

FIG. 83 is a schematic view illustrating the seventh semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 450I shown as a plan view and a sectional view in FIG.
Is a so-called meter pointer type semiconductor light emitting device. Then, the fluorescent material layer F is formed on the light reflecting surface of the substrate 460.
L is applied.

FIG. 84 is a schematic view illustrating the eighth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 500I shown as a cross-sectional view in the same drawing is a so-called substrate type 7-segment semiconductor light emitting device. Then, a fluorescent material layer FL is applied on the light reflecting plate 520. Although the example shown in the figure represents a so-called "hollow type", the present embodiment can be similarly applied to a "resin-sealed type".

FIG. 85 is a schematic view illustrating the ninth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 550I shown as a cross-sectional view in the same drawing is a so-called lead frame type seven-segment semiconductor light emitting device. Then, a fluorescent material layer FL is applied to the surface of the light reflecting plate 570.

FIG. 86 is a schematic view illustrating the tenth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 650I shown as a cross-sectional view in the same drawing is a so-called matrix type semiconductor light emitting device. The surface of the light reflecting plate 670 is coated with the fluorescent material layer FL.

FIG. 87 is a schematic view illustrating the eleventh semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 700I shown as a cross-sectional view in the same drawing is a so-called array type semiconductor light emitting device. Then, the fluorescent material layer FL is provided on the surfaces of the light reflection plate 722 and the partition plate 724.
Is applied.

FIG. 88 is a schematic view illustrating the twelfth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 750I shown as a cross-sectional view in the same drawing is a semiconductor light emitting device as a so-called can type laser. Then, a fluorescent material layer FL is applied to the light reflecting surface of the stem 770.

In the above, a specific example of the tenth embodiment of the present invention has been described with reference to FIGS. In each of the specific examples described above, the various effects described above with reference to FIG. 77 can be obtained in the same manner.

Next, an eleventh embodiment of the present invention will be described. In the present embodiment, it is possible to realize a semiconductor light emitting device capable of efficiently converting the wavelength of light from a semiconductor light emitting element and extracting the light to the outside by arranging a fluorescent material layer in a light extraction part of the semiconductor light emitting device. Can be.

FIG. 89 is a schematic view illustrating the semiconductor light emitting device according to this embodiment. That is, the semiconductor light emitting device 350J shown as a cross-sectional view in the same drawing is a so-called surface emitting type semiconductor light emitting device. The phosphor layer FL is arranged in the light extraction window of the light emitting device, so that the wavelength of the light from the semiconductor light emitting element 990 can be converted and extracted outside.

[0254] Such a fluorescent material layer FL can be formed, for example, by applying a solvent in which a fluorescent material is dispersed on a light extraction window, and drying. Examples of the type of the solvent include resin-based, rubber-based, organic material-based, inorganic material-based, starch-based, protein, tar-based, and metal solder-based as in the case described above.
Here, the use of an inorganic solvent is advantageous in that heat resistance and chemical resistance are high and incombustibility is also obtained. Also,
When using rubber, starchy or protein,
This is advantageous in that stress after drying is reduced, and defects such as cracks due to residual stress of the solvent can be prevented. In addition, starch and proteins also have the advantage of being easy to handle because they have water solubility.

Further, a light-transmitting film in which a fluorescent substance is previously applied or dispersed inside may be attached to the light extraction window of the semiconductor light emitting device.

On the other hand, in the case of a semiconductor light emitting device having a condenser lens in the light extraction portion, a fluorescent substance may be applied to the lens surface or dispersed inside.

Also in this embodiment, the semiconductor light emitting element 9
90 need not contain a fluorescent material. However, in order to obtain high wavelength conversion efficiency with many fluorescent materials which are usually obtained, it is desirable that the semiconductor light emitting device has high luminance in a blue region or an ultraviolet region having a shorter wavelength. As such a semiconductor light emitting device, for example, a GaN-based, ZnSe-based, SiC-based, ZnS-based,
A light-emitting element using a semiconductor material such as a BN-based material for the light-emitting layer can be given.

Also, in the present embodiment, as the fluorescent substance to be used, various inorganic phosphors and organic phosphors as described in the first embodiment can be appropriately selected and used. In the selection, it is desirable to select a fluorescent substance having a high wavelength conversion efficiency in the relationship between the emission wavelength of the semiconductor light emitting element to be used and the wavelength of the desired extracted light. It is also desirable to select one that is effectively excited by light of a wavelength other than the visible light region. This is because when a fluorescent substance excited by visible light is used, so-called "color mixing" occurs when the semiconductor light emitting devices are arranged in parallel. That is, the fluorescent substance of the semiconductor light emitting device is excited by receiving visible light from the adjacent light emitting device, and may cause unnecessary light emission.

According to the present embodiment, the semiconductor light emitting device 99
Since the light from 0 is converted into a wavelength by the phosphor layer FL and extracted outside, the uniformity of the emission wavelength becomes very good. In other words, the emission wavelength of the phosphor is constant without depending on the intensity and wavelength of the excitation light, so that the emission wavelength of the semiconductor light emitting device is stable even when the characteristics of the semiconductor light emitting element vary. Further, for the same reason, it is also possible to suppress the variation of the emission wavelength depending on the drive current and the applied voltage.

According to the present embodiment, the life of the light emitting device can be prolonged, and the manufacturing cost can be reduced. Furthermore, by using light in the ultraviolet region as the excitation light source, it is possible to eliminate "color mixture" that occurs in the visible light region.

Hereinafter, a specific example of the semiconductor light emitting device according to the present embodiment will be described with reference to the drawings. In the specific examples described below, the same portions as those described above are denoted by the same reference numerals, and description thereof will be omitted.

FIG. 90 is a schematic view illustrating the second semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 450J shown as a plan view and a sectional view in FIG.
Is a so-called meter pointer type semiconductor light emitting device. Then, the fluorescent material layer FL is formed on the light extraction portion by any of the methods described above.

FIG. 91 is a schematic view illustrating the third semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 500J shown as a cross-sectional view in the same drawing is a so-called substrate type 7-segment semiconductor light emitting device. Then, the fluorescent material layer FL is formed on the light extraction portion by any of the methods described above. Although the example shown in the figure represents a so-called "hollow type", the present embodiment can be similarly applied to a "resin-sealed type".

FIG. 92 is a schematic view illustrating the fourth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 550J shown as a cross-sectional view in the same drawing is a so-called lead frame type 7 segment type semiconductor light emitting device. Then, the fluorescent material layer FL is formed on the light extraction portion by any of the methods described above.

FIG. 93 is a schematic view illustrating the fifth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 650J shown as a cross-sectional view in the same drawing is a so-called matrix type semiconductor light emitting device. Then, the fluorescent material layer FL is formed on the light extraction portion by any of the methods described above.

FIG. 94 is a schematic view illustrating the sixth semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 700J shown as a cross-sectional view in the same drawing is a so-called array type semiconductor light emitting device. The rod lens 740 contains a fluorescent substance. Further, a fluorescent substance may be applied to the surface of the rod lens 740, or a transparent film containing the fluorescent substance may be attached.

FIG. 95 is a schematic view illustrating the seventh semiconductor light emitting device according to the present embodiment. That is, the semiconductor light emitting device 750J shown as a cross-sectional view in the same drawing is a semiconductor light emitting device as a so-called can type laser. Then, the fluorescent material layer FL is formed on the light extraction portion by any of the methods described above.

In the above, a specific example of the eleventh embodiment of the present invention has been described with reference to FIGS. In each of the specific examples described above, the various effects described above with reference to FIG. 89 can be obtained in the same manner.

Next, a twelfth embodiment of the present invention will be described. In the present embodiment, by arranging a lump of a fluorescent substance in the vicinity of the light extraction part of the light emitting element of the semiconductor light emitting device, the semiconductor light emitting element can efficiently convert the wavelength of light from the semiconductor light emitting element and extract the light to the outside. The device can be realized.

FIG. 96 is a schematic view illustrating the semiconductor light emitting device according to this embodiment. That is, the semiconductor light emitting device 100K shown as a cross-sectional view in FIGS.
And 100L are so-called lead frame type LED lamps.

The LED lamp 100K shown in FIG.
Is configured such that a mass FL of the phosphor processed into a flat plate is disposed above the semiconductor light emitting element 990 to perform wavelength conversion. In addition, in the LED lamp 100L shown in FIG.
Are arranged above the semiconductor light emitting element 990, and a phosphor mass FL processed so as to cover the periphery thereof is arranged. Such a phosphor mass FL can be formed, for example, by mixing the phosphor in a predetermined medium such as an organic material or an inorganic material and sintering the mixture. Further, the shape and the position of the arrangement can be appropriately optimized according to the configuration of the semiconductor light emitting device. Also in the present embodiment, the light emitted from the semiconductor light emitting device 990 is
The wavelength is converted by L and can be taken out. Therefore, effects similar to those of the above-described embodiments can be obtained.

[0272]

The present invention is embodied in the form described above, and has the following effects. According to the present invention, the light emission from the light emitting layer of the semiconductor light emitting element is not directly extracted, and the wavelength is converted by the fluorescent substance.
The problem that the emission wavelength fluctuates depending on the drive current, temperature, and the like can be solved. That is, according to the present invention, the emission wavelength is extremely stable, and the emission luminance and the emission wavelength can be controlled independently.

According to the present invention, a plurality of emission wavelengths can be easily obtained by appropriately combining the fluorescent substances used. For example, by appropriately mixing red (R), green (G), and blue (B) fluorescent substances and incorporating them into a light-emitting element, white light can be easily emitted.

Further, according to the present invention, it is not necessary to appropriately select and change the material and structure of the built-in semiconductor light emitting element according to the emission wavelength. For example, conventionally, an AlGaAs-based material is used to emit light in red, and a GaAsP-based or InGaAlP-based material is used for yellow.
System material, GaP or InGaAlP for green color
There is a problem that an optimum material such as an InGaN-based material must be selected in accordance with the wavelength, such as an InGaN-based material. On the other hand, according to the present invention, the type of the fluorescent substance may be appropriately selected according to the emission wavelength, and it is not necessary to change the semiconductor light emitting device.

Further, according to the present invention, even when it is necessary to arrange semiconductor light emitting elements having different emission colors, the emission color needs to be changed only by changing the kind of the phosphor to be used. And the structure can be the same. Therefore, the configuration of the light emitting device can be extremely simplified, the manufacturing cost can be significantly reduced, the reliability is high, and the driving current, the supply voltage, the element size, and the like are commonly used. This also has the advantage that the range of application can be significantly expanded.

As described above, according to the present invention, with a relatively simple structure, the semiconductor light emitting wavelength is extremely stable, and can emit light with high luminance at various wavelengths from visible light to infrared region. An element and a semiconductor light emitting device can be provided, and industrial advantages are great.

[Brief description of the drawings]

FIG. 1 is a sectional view illustrating a schematic configuration of a first semiconductor light emitting device according to the present invention.

FIG. 2 is a sectional view illustrating a schematic configuration of a second semiconductor light emitting device according to the present invention.

FIG. 3 is a schematic cross-sectional view illustrating a first semiconductor light emitting device according to a second embodiment of the present invention.

FIG. 4 is a schematic sectional view showing a second semiconductor light emitting device according to a second embodiment of the present invention.

FIG. 5 is a schematic sectional view illustrating a third semiconductor light emitting device according to a second embodiment of the present invention.

FIG. 6 is a schematic sectional view illustrating a fourth semiconductor light emitting device according to a second embodiment of the present invention.

FIG. 7 is a schematic sectional view illustrating a fifth semiconductor light emitting device according to a second embodiment of the present invention.

FIG. 8 is a schematic sectional view illustrating a sixth semiconductor light emitting device according to a second embodiment of the present invention.

FIG. 9 is a schematic sectional view illustrating a seventh semiconductor light emitting device according to a second embodiment of the present invention.

FIG. 10 is a schematic sectional view illustrating an eighth semiconductor light emitting device according to a second embodiment of the present invention.

FIG. 11 is a schematic sectional view illustrating a ninth semiconductor light emitting device according to a second embodiment of the present invention.

FIG. 12 is a schematic sectional view illustrating a tenth semiconductor light emitting device according to a second embodiment of the present invention.

FIG. 13 is a schematic sectional view illustrating an eleventh semiconductor light emitting device according to a second embodiment of the present invention.

FIG. 14 is a schematic sectional view illustrating a twelfth semiconductor light emitting device according to a second embodiment of the present invention.

FIG. 15 is a schematic sectional view illustrating a thirteenth semiconductor light emitting device according to a second embodiment of the present invention.

FIG. 16 is a schematic sectional view illustrating a first semiconductor light emitting device according to a third embodiment of the present invention.

FIG. 17 is a schematic cross-sectional view illustrating a second semiconductor light emitting device according to a third embodiment of the present invention.

FIG. 18 is a schematic sectional view illustrating a third semiconductor light emitting device according to a third embodiment of the present invention.

FIG. 19 is a schematic sectional view illustrating a fourth semiconductor light emitting device according to a third embodiment of the present invention.

FIG. 20 is a schematic sectional view illustrating a fifth semiconductor light emitting device according to a third embodiment of the present invention.

FIG. 21 is a schematic sectional view illustrating a sixth semiconductor light emitting device according to a third embodiment of the present invention.

FIG. 22 is a schematic sectional view illustrating a seventh semiconductor light emitting device according to a third embodiment of the present invention.

FIG. 23 is a schematic sectional view illustrating an eighth semiconductor light emitting device according to a third embodiment of the present invention.

FIG. 24 is a schematic sectional view illustrating a ninth semiconductor light emitting device according to a third embodiment of the present invention.

FIG. 25 is a schematic sectional view illustrating a tenth semiconductor light emitting device according to a third embodiment of the present invention.

FIG. 26 is a schematic sectional view illustrating an eleventh semiconductor light emitting device according to a third embodiment of the present invention.

FIG. 27 is a schematic view illustrating a first semiconductor light emitting device according to a fourth embodiment of the present invention.

FIG. 28 is a schematic view illustrating a second semiconductor light emitting device according to a fourth embodiment of the present invention.

FIG. 29 is a schematic view illustrating a third semiconductor light emitting device according to a fourth embodiment of the present invention.

FIG. 30 is a schematic view illustrating a fourth semiconductor light emitting device according to a fourth embodiment of the present invention.

FIG. 31 is a schematic view illustrating a fifth semiconductor light emitting device according to a fourth embodiment of the present invention.

FIG. 32 is a schematic view illustrating a sixth semiconductor light emitting device according to a fourth embodiment of the present invention.

FIG. 33 is a schematic view illustrating a seventh semiconductor light emitting device according to a fourth embodiment of the present invention.

FIG. 34 is a schematic view illustrating an eighth semiconductor light emitting device according to the fourth embodiment of the present invention.

FIG. 35 is a schematic view illustrating a first semiconductor light emitting device according to a fifth embodiment of the present invention.

FIG. 36 is a schematic view illustrating a second semiconductor light emitting device according to a fifth embodiment of the present invention.

FIG. 37 is a schematic view illustrating a third semiconductor light emitting device according to a fifth embodiment of the present invention.

FIG. 38 is a schematic view illustrating a fourth semiconductor light emitting device according to a fifth embodiment of the present invention.

FIG. 39 is a schematic view illustrating a fifth semiconductor light emitting device according to a fifth embodiment of the present invention.

FIG. 40 is a schematic view illustrating a sixth semiconductor light emitting device according to a fifth embodiment of the present invention.

FIG. 41 is a schematic view illustrating a first semiconductor light emitting device according to a sixth embodiment of the present invention.

FIG. 42 is a schematic view illustrating a second semiconductor light emitting device according to a sixth embodiment of the present invention.

FIG. 43 is a schematic view illustrating a third semiconductor light emitting device according to a sixth embodiment of the present invention.

FIG. 44 is a schematic view illustrating a fourth semiconductor light emitting device according to a sixth embodiment of the present invention.

FIG. 45 is a schematic view illustrating a fifth semiconductor light emitting device according to a sixth embodiment of the present invention.

FIG. 46 is a schematic diagram illustrating a sixth semiconductor light emitting device according to a sixth embodiment of the present invention.

FIG. 47 is a schematic view illustrating a first semiconductor light emitting device according to a seventh embodiment of the present invention.

FIG. 48 is a schematic view illustrating a second semiconductor light emitting device according to a seventh embodiment of the present invention.

FIG. 49 is a schematic view illustrating a third semiconductor light emitting device according to a seventh embodiment of the present invention.

FIG. 50 is a schematic view illustrating a fourth semiconductor light emitting device according to a seventh embodiment of the present invention.

FIG. 51 is a schematic view illustrating a fifth semiconductor light emitting device according to a seventh embodiment of the present invention.

FIG. 52 is a schematic view illustrating a sixth semiconductor light emitting device according to a seventh embodiment of the present invention.

FIG. 53 is a schematic view illustrating a first semiconductor light emitting device according to an eighth embodiment of the present invention.

FIG. 54 is a schematic view illustrating a second semiconductor light emitting device according to an eighth embodiment of the present invention.

FIG. 55 is a schematic view illustrating a third semiconductor light emitting device according to an eighth embodiment of the present invention.

FIG. 56 is a schematic view illustrating a fourth semiconductor light emitting device according to an eighth embodiment of the present invention.

FIG. 57 is a schematic view illustrating a fifth semiconductor light emitting device according to an eighth embodiment of the present invention.

FIG. 58 is a schematic view illustrating a sixth semiconductor light emitting device according to an eighth embodiment of the present invention.

FIG. 59 is a schematic view illustrating a seventh semiconductor light emitting device according to an eighth embodiment of the present invention.

FIG. 60 is a schematic view illustrating an eighth semiconductor light emitting device according to an eighth embodiment of the present invention.

FIG. 61 is a schematic view illustrating a ninth semiconductor light emitting device according to an eighth embodiment of the present invention.

FIG. 62 is a schematic view illustrating a tenth semiconductor light emitting device according to an eighth embodiment of the present invention.

FIG. 63 is a schematic view illustrating an eleventh semiconductor light emitting device according to an eighth embodiment of the present invention.

FIG. 64 is a schematic view illustrating a twelfth semiconductor light emitting device according to an eighth embodiment of the present invention.

FIG. 65 is a schematic view illustrating a first semiconductor light emitting device according to a ninth embodiment of the present invention.

FIG. 66 is a schematic view illustrating a second semiconductor light emitting device according to a ninth embodiment of the present invention.

FIG. 67 is a schematic view illustrating a third semiconductor light emitting device according to a ninth embodiment of the present invention.

FIG. 68 is a schematic view illustrating a fourth semiconductor light emitting device according to a ninth embodiment of the present invention.

FIG. 69 is a schematic view illustrating a fifth semiconductor light emitting device according to a ninth embodiment of the present invention.

FIG. 70 is a schematic view illustrating a sixth semiconductor light emitting device according to a ninth embodiment of the present invention.

FIG. 71 is a schematic view illustrating a seventh semiconductor light emitting device according to a ninth embodiment of the present invention.

FIG. 72 is a schematic view illustrating an eighth semiconductor light emitting device according to a ninth embodiment of the present invention.

FIG. 73 is a schematic view illustrating a ninth semiconductor light emitting device according to a ninth embodiment of the present invention.

FIG. 74 is a schematic view illustrating a tenth semiconductor light emitting device according to a ninth embodiment of the present invention.

FIG. 75 is a schematic view illustrating an eleventh semiconductor light emitting device according to a ninth embodiment of the present invention.

FIG. 76 is a schematic view illustrating a twelfth semiconductor light emitting device according to a ninth embodiment of the present invention.

FIG. 77 is a schematic view illustrating a first semiconductor light emitting device according to a tenth embodiment of the present invention.

FIG. 78 is a schematic view illustrating a second semiconductor light emitting device according to a tenth embodiment of the present invention.

FIG. 79 is a schematic view illustrating a third semiconductor light emitting device according to a tenth embodiment of the present invention.

FIG. 80 is a schematic view illustrating a fourth semiconductor light emitting device according to a tenth embodiment of the present invention.

FIG. 81 is a schematic view illustrating a fifth semiconductor light emitting device according to a tenth embodiment of the present invention.

FIG. 82 is a schematic view illustrating a sixth semiconductor light emitting device according to a tenth embodiment of the present invention.

FIG. 83 is a schematic view illustrating a seventh semiconductor light emitting device according to a tenth embodiment of the present invention.

FIG. 84 is a schematic view showing an eighth semiconductor light emitting device according to the tenth embodiment of the present invention.

FIG. 85 is a schematic view showing a ninth semiconductor light emitting device according to a tenth embodiment of the present invention.

FIG. 86 is a schematic view illustrating a tenth semiconductor light emitting device according to a tenth embodiment of the present invention.

FIG. 87 is a schematic view illustrating an eleventh semiconductor light emitting device according to a tenth embodiment of the present invention.

FIG. 88 is a schematic view illustrating a twelfth semiconductor light emitting device according to a tenth embodiment of the present invention.

FIG. 89 is a schematic view illustrating a first semiconductor light emitting device according to an eleventh embodiment of the present invention.

FIG. 90 is a schematic view illustrating a second semiconductor light emitting device according to an eleventh embodiment of the present invention.

FIG. 91 is a schematic view illustrating a third semiconductor light emitting device according to an eleventh embodiment of the present invention.

FIG. 92 is a schematic view illustrating a fourth semiconductor light emitting device according to an eleventh embodiment of the present invention.

FIG. 93 is a schematic view illustrating a fifth semiconductor light emitting device according to an eleventh embodiment of the present invention.

FIG. 94 is a schematic view illustrating a sixth semiconductor light emitting device according to an eleventh embodiment of the present invention.

FIG. 95 is a schematic view illustrating a seventh semiconductor light emitting device according to an eleventh embodiment of the present invention.

FIG. 96 is a schematic view showing a semiconductor light emitting device according to a twelfth embodiment of the present invention.

FIG. 97 is a schematic cross-sectional view illustrating a configuration of a conventional gallium nitride-based light emitting device.

[Explanation of symbols]

 10, 50 Semiconductor light emitting device 100, 200 LED lamp 250, 300 SMD lamp 350 Surface emitting type light emitting device 400 Dome type light emitting device 450 Meter pointer type light emitting device 500, 550 7 segment type light emitting device 600 Level meter type light emitting device 650 Matrix -Type light-emitting device 700 Array-type light-emitting device 750 Can-type light-emitting device

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification code FI Theme Court ゛ (Reference) (72) Inventor Kuniaki Konno 72 Horikawa-cho, Saiwai-ku, Kawasaki-shi, Kanagawa Pref. 72) Inventor Nobuhiro Suzuki 72 Horikawa-cho, Saiwai-ku, Kawasaki-shi, Kanagawa Inside the Toshiba Kawasaki Plant

Claims (39)

[Claims] A light emitting layer that emits light of a first wavelength; and a light that has a second wavelength different from the first wavelength by absorbing the light of the first wavelength emitted by the light emitting layer. A semiconductor light emitting device, comprising: a fluorescent substance that emits light. A first electrode connected to the first electrode and having a first conductivity type;
A light emitting layer provided on the first semiconductor layer and emitting light of a first wavelength; and a second light emitting layer provided on the light emitting layer and having a second conductivity type.
And a second electrode connected to the second semiconductor layer, wherein the semiconductor light-emitting element absorbs light of the first wavelength emitted from the light-emitting layer, and A semiconductor light emitting device comprising a fluorescent substance that emits light of a second wavelength different from the first wavelength. 3. The semiconductor light emitting device according to claim 1, wherein said fluorescent substance is contained in at least one of said first electrode and said second electrode. 4. The method according to claim 1, wherein the fluorescent substance is contained in at least one of the first semiconductor layer, the light emitting layer, and the second semiconductor layer. Semiconductor light emitting device. 5. The semiconductor device according to claim 1, wherein the fluorescent material is deposited on a surface of the semiconductor light emitting device.
3. The semiconductor light emitting device according to item 1. 6. The light emitting device according to claim 1, wherein the light emitting layer is made of a gallium nitride-based semiconductor, and the second wavelength is longer than the first wavelength. Semiconductor light emitting device. 7. The light emitting device according to claim 1, wherein the light emitting layer is made of a gallium nitride based semiconductor containing indium, and the second wavelength is longer than the first wavelength. 4. The semiconductor light emitting device according to any one of the above. 8. The light emitting layer is made of ZnSe, ZnSSe, Z
The method according to any one of claims 1 to 5, comprising a material selected from the group consisting of nS, BN, and SiC, wherein the second wavelength is longer than the first wavelength. Semiconductor light emitting device. 9. The semiconductor light emitting device according to claim 1, wherein said first wavelength is 380 nm or less. 10. A lead frame mounted on said lead frame.
A semiconductor light-emitting device, comprising: the semiconductor light-emitting element according to any one of claims 9 to 9. 11. A semiconductor light emitting device comprising: a stem; and the semiconductor light emitting element according to claim 1 mounted on the stem. 12. A semiconductor light emitting device comprising: a substrate; and the semiconductor light emitting element according to claim 1 mounted on the substrate. 13. The semiconductor light emitting device according to claim 12, wherein said wavelength conversion layer is made of an adhesive or tacky medium in which said fluorescent substance is dispersed. 14. The wavelength conversion layer is made of a medium in which the fluorescent substance is dispersed, and the medium is mainly composed of a material selected from the group consisting of an inorganic polymer, rubber, starch, and protein. 13. The semiconductor light emitting device according to claim 12, wherein: 15. The medium according to claim 15, wherein the wavelength conversion layer is a medium layer mainly containing a material selected from the group consisting of an inorganic polymer, rubber, starch, and protein; 13. The semiconductor light emitting device according to claim 12, comprising a fluorescent material layer. 16. The light refraction index of the medium is between the light refraction index of the material forming the light emission part of the semiconductor light emitting element and the light refraction index of the light emission part adjacent to the wavelength conversion layer. The semiconductor light emitting device according to claim 13, wherein the semiconductor light emitting device has the following value. 17. A semiconductor device comprising: a lead frame; a semiconductor light emitting device mounted on the lead frame; and a sealing resin provided so as to surround the semiconductor light emitting device. The light emitting side surface layer selectively contains a fluorescent substance, and the light of the first wavelength emitted from the semiconductor light emitting element is absorbed by the fluorescent substance contained in the sealing resin and the first light is emitted. A semiconductor light emitting device characterized in that the light is converted into light of a second wavelength different from the wavelength of the light and emitted. 18. A circuit board comprising: a wiring board; a semiconductor light emitting element mounted on the wiring board; and a sealing resin provided to surround the semiconductor light emitting element. The surface layer on the side selectively contains a fluorescent substance, and the light of the first wavelength emitted from the semiconductor light emitting element is absorbed by the fluorescent substance contained in the sealing resin and the first wavelength A semiconductor light emitting device characterized in that the light is converted into light having a second wavelength different from the above and emitted. 19. A light emitting device comprising: a stem; a semiconductor light emitting element mounted on the stem; and a sealing resin provided so as to surround the semiconductor light emitting element. The surface layer selectively contains a fluorescent substance, and light of a first wavelength emitted from the semiconductor light emitting element is absorbed by the fluorescent substance contained in the sealing resin and is different from the first wavelength. A semiconductor light emitting device characterized by being converted into light of a second wavelength and emitted. 20. A lead frame, a semiconductor light-emitting element mounted on the lead frame, a sealing resin provided so as to surround the semiconductor light-emitting element, and laminated on a surface of the sealing resin. A wavelength conversion layer, wherein the wavelength conversion layer contains a fluorescent substance, and the light of the first wavelength emitted from the semiconductor light emitting element is absorbed by the fluorescent substance contained in the wavelength conversion layer. A semiconductor light emitting device, wherein the light is converted into light having a second wavelength different from the first wavelength and emitted. 21. A wiring board, a semiconductor light emitting element mounted on the wiring board, a sealing resin provided so as to surround the semiconductor light emitting element, and a wavelength laminated on a surface of the sealing resin. And a conversion layer, wherein the wavelength conversion layer contains a fluorescent substance, and light of the first wavelength emitted from the semiconductor light emitting element is absorbed by the fluorescent substance contained in the wavelength conversion layer. A semiconductor light emitting device characterized by being converted into light having a second wavelength different from the first wavelength and emitted. 22. A stem, a semiconductor light emitting element mounted on the stem, a sealing resin provided so as to surround the semiconductor light emitting element, and a wavelength conversion layer laminated on a surface of the sealing resin. The wavelength conversion layer contains a fluorescent substance, and the light of the first wavelength emitted from the semiconductor light emitting element is absorbed by the fluorescent substance contained in the wavelength conversion layer, A semiconductor light emitting device, wherein the semiconductor light emitting device is converted into light having a second wavelength different from the first wavelength and emitted. 23. A mounting member, a semiconductor light-emitting element mounted on the mounting member, a first resin provided so as to surround the semiconductor light-emitting element, and provided so as to surround the first resin. Wherein the first resin contains a fluorescent substance, and light of a first wavelength emitted from the semiconductor light emitting element is absorbed by the fluorescent substance, and the first wavelength A semiconductor light emitting device characterized in that the light is converted into light having a second wavelength different from the above and emitted. 24. The semiconductor light emitting device according to claim 23, wherein said first resin is a dipping resin, and said sealing resin is a molding resin. 25. A mounting member, a semiconductor light emitting device mounted on the mounting member,
The mounting member contains a fluorescent substance, light of a first wavelength emitted from the semiconductor light emitting element is absorbed by the fluorescent substance, and is converted into light of a second wavelength different from the first wavelength. A semiconductor light emitting device characterized by being converted and emitted. 26. A semiconductor light emitting device, comprising: a mounting member; and a semiconductor light emitting device mounted on the mounting member with an adhesive, wherein the adhesive contains a fluorescent substance, and the first emitted from the semiconductor light emitting device. A semiconductor light emitting device, wherein light having a wavelength of? 27. A mounting member, comprising: a wavelength conversion layer deposited on the mounting member; and a semiconductor light emitting device mounted on the wavelength conversion layer, wherein the wavelength conversion layer contains a fluorescent substance. The light of the first wavelength emitted from the semiconductor light emitting element is absorbed by the fluorescent substance, converted into light of a second wavelength different from the first wavelength, and emitted. Characteristic semiconductor light emitting device. 28. A semiconductor light emitting device, comprising: a light reflecting plate for reflecting light emitted from the semiconductor light emitting device; and a wavelength conversion layer deposited on a surface of the light reflecting plate. Containing a fluorescent substance, light of a first wavelength emitted from the semiconductor light emitting element is absorbed by the fluorescent substance, converted into light of a second wavelength different from the first wavelength, and emitted. A semiconductor light emitting device characterized by the following. 29. A mounting member, comprising: a semiconductor light emitting device mounted on the mounting member; and a film layer for receiving light emitted from the semiconductor light emitting device, wherein the film layer contains a fluorescent substance. The light of the first wavelength emitted from the semiconductor light emitting element is mixed with or deposited on the surface, is absorbed by the fluorescent substance, is converted into light of a second wavelength different from the first wavelength, and is emitted. A semiconductor light-emitting device characterized in that: 30. A mounting member, a semiconductor light emitting device mounted on the mounting member, an envelope provided to cover the periphery of the semiconductor light emitting device, and a light extraction portion of the envelope A wavelength conversion unit provided,
The wavelength conversion section contains a fluorescent substance, and light of a first wavelength emitted from the semiconductor light emitting element is absorbed by the fluorescent substance, and light of a second wavelength different from the first wavelength is provided. A semiconductor light emitting device characterized in that the light is converted and emitted. 31. A mounting member, a semiconductor light emitting device mounted on the mounting member, and a lens for condensing light emitted from the semiconductor light emitting device, wherein the lens has a fluorescent substance therein. The light of the first wavelength emitted from the semiconductor light emitting element is mixed with or deposited on the surface, is absorbed by the fluorescent substance, is converted into light of a second wavelength different from the first wavelength, and is emitted. A semiconductor light-emitting device characterized in that: 32. The semiconductor light emitting device according to claim 13, wherein the semiconductor light emitting device has a light emitting layer made of a gallium nitride based semiconductor, and the first wavelength is shorter than the second wavelength. The semiconductor light emitting device according to any one of the above. 33. The semiconductor light emitting device according to claim 33, wherein the semiconductor light emitting device is ZnSe, Zn
32. A light-emitting layer comprising a material selected from the group consisting of S, BN, and SiC, wherein the first wavelength is shorter than the second wavelength. The semiconductor light emitting device according to one of the above. 34. The semiconductor light emitting device according to claim 13, wherein said first wavelength is 380 nm or less. 35. The semiconductor light emitting device according to claim 13, wherein said second wavelength is a wavelength in a visible light region. 36. The semiconductor light emitting device according to claim 13, wherein said second wavelength includes at least three types of wavelengths corresponding to red, green, and blue, respectively. . 37. A step of mounting a semiconductor light emitting element on a mounting member; a step of applying a sticky or adhesive medium on the semiconductor light emitting element; and a step of spraying a phosphor on the medium. And a step of drying the medium. 38. A step of mounting a semiconductor light emitting element on a mounting member; a step of applying an adhesive or adhesive medium in which a phosphor is dispersed in advance on the semiconductor light emitting element; and drying the medium. And a method of manufacturing a semiconductor light emitting device. 39. The medium according to claim 37, wherein the medium is mainly composed of a material selected from the group consisting of an inorganic polymer, rubber, starch, and protein.
9. The method according to 8.