JP2009289805A - Component built-in substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a component built-in substrate which has superior electric reliability. <P>SOLUTION: The component built-in substrate 2 includes a first film layer 5a which has a coefficient of plane-direction thermal expansion smaller than a coefficient of thickness-direction thermal expansion, a conductive layer 8 formed on the first film layer 5a, an insulating layer 6 formed on the conductive layer 8 and has a coefficient of plane-direction thermal expansion larger than a coefficient of plane-direction thermal expansion of the first film layer 5a, an electronic component 7 provided in the insulating layer 6 and connected to the conductive layer 8, and a second film layer 5b formed on the insulating layer 6 and having a coefficient of plane-direction thermal expansion smaller than a coefficient of thickness-direction thermal expansion. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a component-embedded substrate that incorporates a semiconductor element such as an IC (Integrated Circuit) or an LSI (Large Scale Integration).

  2. Description of the Related Art Conventionally, a component-embedded substrate in which an electronic component such as a semiconductor element or a capacitor is built is known (see Patent Document 1 below).

The component-embedded substrate described in Patent Document 1 includes a base body in which an insulating layer made of a thermosetting resin and a copper foil are laminated, and an electronic component built in the base body. The electronic component is connected to the copper foil formed inside the insulating layer and between the insulating layers.
JP 2002-261449 A

  However, in the technique described in Patent Document 1 described above, as the component-embedded substrate is designed to be thin, the influence of shrinkage due to thermosetting of the insulating layer increases, and the component-embedded substrate tends to warp. Therefore, in a thin component-embedded substrate, the insulating layer may be thermally contracted by heat from the outside, and the electronic component may be peeled off from the copper foil. As a result, the electrical reliability of the component built-in substrate is lowered.

  The present invention has been made in view of the above-described problems, and an object thereof is to provide a component-embedded substrate having excellent electrical reliability.

  In order to solve the above problems, the component-embedded substrate of the present invention includes a first film layer having a thermal expansion coefficient in the plane direction smaller than that in the thickness direction, and a conductive layer formed on the first film layer. And an insulating layer formed on the conductive layer and having a thermal expansion coefficient in the planar direction larger than the thermal expansion coefficient in the planar direction of the first film layer, and provided in the insulating layer and connected to the conductive layer. And a second film layer formed on the insulating layer and having a thermal expansion coefficient in the plane direction smaller than that in the thickness direction.

  In the component-embedded substrate of the present invention, a part of the conductive layer is embedded in the first film layer.

  In the component-embedded substrate of the present invention, a through-hole conductor penetrating from the lower surface of the first film layer to the upper surface of the second film layer is formed, and the through-hole conductor is formed of the first film layer. The first conductive layer formed on the lower surface is electrically connected to the second conductive layer formed on the upper surface of the second film layer.

  In the component-embedded substrate of the present invention, an inorganic filler is provided in the insulating layer, and a part of the inorganic filler is embedded in the through-hole conductor.

  In the component-embedded substrate of the present invention, the through-hole conductor is formed along an inner wall surface of the through-hole that penetrates from the lower surface of the first film layer to the upper surface of the second film layer. A region surrounded by the hole conductor is filled with a resin body.

  In the component-embedded substrate of the present invention, the thermal expansion coefficient in the planar direction of the second film layer is larger than the thermal expansion coefficient in the planar direction of the second film layer.

  In the component-embedded substrate of the present invention, the thickness of the insulating layer is larger than the sum of the thicknesses of the first film layer and the second film layer disposed on both upper and lower sides. .

  In the component-embedded substrate of the present invention, the first film layer and the second film layer are made of polyimide benzoxazole resin or polyparaphenylene benzbisoxazole resin, and the insulating layer is made of epoxy resin. To do.

  The present invention can provide a component-embedded substrate with excellent electrical reliability.

  Hereinafter, a component-embedded substrate according to an embodiment of the present invention will be described in detail with reference to the drawings. FIG. 1 is a plan view of a mounting structure including a component built-in substrate according to an embodiment of the present invention. FIG. 2 is a cross-sectional view of the mounting structure.

  A mounting structure 1 according to the present embodiment includes a component-embedded substrate 2 and a semiconductor element 4 such as an IC or LSI that is flip-chip mounted on the component-embedded substrate 2 via bumps 3 such as solder. Has been.

  The component built-in substrate 2 has a laminated structure in which an insulating layer 6 is provided between a pair of upper and lower film layers 5, and an electronic component 7 is built therein. The electronic component 7 is connected to the conductive layer 8 formed on the film layer 5 in the insulating layer 6.

  The film layer 5 corresponds to the uppermost layer and the lowermost layer in the laminated structure of the component-embedded substrate 2. Here, the film layer 5 located in the lowermost layer is referred to as a first film layer 5a, and the film layer 5 located in the uppermost layer is referred to as a second film layer 5b. The film layer 5 is made of a material having a thermal expansion coefficient in the plane direction smaller than that in the thickness direction. The plane direction corresponds to the X direction shown in FIG. 2, and the thickness direction corresponds to the Z direction shown in FIG.

  The thickness of the film layer 5 is precisely controlled in order to ensure the flatness of the component-embedded substrate 2. The film layer 5 is desirably a material that can be elastically deformed and has excellent heat resistance and hardness. As the film layer 5 having such characteristics, for example, polyimide benzoxazole resin, polyparaphenylene benzbisoxazole resin, wholly aromatic polyamide resin, wholly aromatic polyester resin or liquid crystal polymer resin, or a mixture of these resins Can be used. The liquid crystal polymer refers to a polymer having a property of being in a liquid crystal state or optically birefringent at the time of melting, generally a lyotropic liquid crystal polymer exhibiting liquid crystallinity in a solution state, a thermotropic liquid crystal polymer exhibiting liquid crystallinity at the time of melting, or heat. This includes all liquid crystal polymers of type 1, type 2 and type 3 classified by deformation temperature. These film layers 5 have a thermal expansion coefficient in the X direction shown in FIG. 2 of −10 ppm / ° C. to 10 ppm / ° C., and a thermal expansion coefficient in the Z direction shown in FIG. 2 of 60 ppm / ° C. to 120 ppm / ° C. is there. The polyimide benzoxazole resin is manufactured from a polyimide having a benzoxazole ring in the main chain.

  Among these, it is preferable to use a resin containing a polyparaphenylene benzbisoxazole resin or a resin sheet containing a polyparaphenylene benzbisoxazole resin. The polyparaphenylene benzbisoxazole resin has a coefficient of thermal expansion in the X direction of −5 ppm / ° C. to 0 ppm / ° C. and a coefficient of thermal expansion in the Z direction of 70 ppm / ° C. to 90 ppm / ° C.

  These resin sheets desirably have a lower coefficient of thermal expansion than the insulating layer 6 containing the inorganic filler 9. Specifically, the thermal expansion coefficient in the X direction is desirably 5 ppm / ° C. In this case, the uncured insulating layer 6 and the film are laminated, heated to cure the uncured insulating layer 6, and then the insulating layer 6 contracts more than the film by cooling, so that the film has a compressive stress. Remains. Due to this compressive residual stress, even in a thin wiring board having an electronic component incorporated therein, the warpage of the board can be reduced, and high dimensional accuracy and flatness can be maintained.

  Further, by using such a low thermal expansion resin that hardly expands in the X direction, the thermal expansion in the X direction of the component-embedded substrate itself on which the semiconductor element 4 is mounted can be suppressed. As a result, the coefficient of thermal expansion of the semiconductor element 4 can be approached, and the semiconductor element 4 can be effectively prevented from being destroyed.

  In addition, since a resin film containing a polyparaphenylene benzbisoxazole resin or a resin film containing a polyparaphenylene benzbisoxazole resin has a lower water absorption rate than a polyimide film, even when it is laminated, moisture is contained in the inner layer. Is not easily accumulated, and even when it is stored in the atmosphere for a long period of time, it is not necessary to perform a process of removing moisture from the resin film, and the manufacturing process can be simplified.

  The thickness of each layer of the first film layer 5a and the second film layer 5b is set to, for example, 5 μm or more and 30 μm or less. Since the first film layer 5a and the second film layer 5b have a coefficient of thermal expansion in the Z direction larger than that of the insulating layer 6, the first film layer 5a and the second film layer 5b tend to expand greatly in the Z direction by heat from the outside. Therefore, by interposing the insulating layer 6 set larger than the combined thickness of the first film layer 5a and the second film layer 5b between the first film layer 5a and the second film layer 5b, the component built-in substrate In this case, the influence of the first film layer 5a and the second film layer 5b thermally expanding in the Z direction can be reduced. This is because the thermal expansion coefficient in the Z direction of the insulating layer 6 is smaller than the thermal expansion coefficient in the Z direction of the first film layer 5a and the second film layer 5b. it can. As a result, as will be described later, it is possible to suppress the through-hole conductor 10 penetrating the component built-in substrate 2 from being subjected to thermal stress in the Z direction and breaking.

  Here, a method for measuring the coefficient of thermal expansion of the film layer will be described. The coefficient of thermal expansion in the thickness direction of the film layer is measured using a laser interferometer or the like while uniformly raising the temperature at a constant heating rate (eg, 2 ° C./min) using a film cut to a predetermined size as a sample. The coefficient of thermal expansion in the thickness direction of the sample can be determined from the relationship between the sample temperature and the film thickness. At this time, a metal or the like may be thinly deposited on the film surface for the purpose of increasing the reflection of the laser beam and facilitating the measurement.

  As for the thermal expansion coefficient in the plane direction of the film layer, when a sample having a side length of 20 mm and a thickness of about 2 mm can be taken out, this sample is set in an existing coefficient of thermal expansion measuring device, and a constant heating rate is set. The temperature can be uniformly increased (for example, 2 ° C./min), and the thermal expansion coefficient in the plane direction can be measured.

  When a sample having the above size cannot be taken out, a film cut within the cuttable range is used as a sample, and at least two measurement markers are provided on the film surface. This marker may be an indentation made with a diamond indenter of a quadrangular pyramid, a line processed with a laser beam, or an injured mark with a fine needle. The sample is attached to an apparatus having a transparent window on the top and capable of raising the temperature of the sample uniformly at a constant heating rate (for example, 2 ° C./min). This apparatus is set in a microscope capable of measuring the sample size, and the distance between the markers is measured while raising the temperature uniformly at a constant heating rate (for example, 2 ° C./min). The coefficient of thermal expansion in the plane direction of the sample can be obtained from the relationship between the sample temperature and the distance between the markers. At this time, a metal or the like may be thinly deposited on the marker portion for the purpose of facilitating reading of the marker on the film surface. Further, for the purpose of preventing the film from warping, a transparent thin plate (thickness of about 0.05 mm to 0.1 mm) such as glass may be placed on the sample and measured. The coefficient of thermal expansion is measured between the temperature before reaching the glass transition temperature from room temperature. This is because the wiring board is used at a temperature lower than its glass transition temperature.

  The conductive layer 8 is formed on the film layer 5, and a part of the conductive layer 8 is embedded in the film layer 5. The conductive layer 8 has a function of transmitting a predetermined electric signal or a function of setting the semiconductor element 4 and the like to a common potential, for example, a ground potential. The conductive layer 8 is made of a metal material such as copper, silver, gold, aluminum, nickel, or chromium.

  Since the conductive layer 8 is partially embedded in the film layer 5, the adhesive force with the film layer 5 can be improved. That is, it is possible to suppress a part of the conductive layer 8 embedded in the film layer 5 from having an anchor effect and peeling the conductive layer 8 from the film layer 5.

  The insulating layer 6 is made of a thermosetting resin or a thermoplastic resin. As such a thermosetting resin, for example, at least one of polyimide resin, acrylic resin, epoxy resin, urethane resin, cyanate resin, silicon resin, and bismaleimide triazine resin can be used. As the thermoplastic resin, since it is necessary to have heat resistance that can withstand heating during solder reflow, it is desirable that the softening temperature of the constituent material is 200 ° C. or higher, and for example, a liquid crystal polymer or the like can be used. . The thermal expansion coefficient of the insulating layer 6 is equal to the thermal expansion coefficient in the X direction as the planar direction shown in FIG. 2 and the thermal expansion coefficient in the Z direction as the thickness direction shown in FIG. 2, for example, 10 ppm / ° C. or more and 25 ppm. / ° C or less. The insulating layer 6 is set so that the thickness after drying is, for example, 1 μm or more and 15 μm or less.

  The insulating layer 6 contains a large number of inorganic fillers 9. By containing the inorganic filler in the insulating layer 6, the viscosity of the insulating layer 6 before curing can be adjusted, and the thickness dimension of the insulating layer 6 can be brought close to a desired value. The inorganic filler is spherical, the diameter of the inorganic filler is set to, for example, 0.05 μm to 6 μm, and the coefficient of thermal expansion is, for example, −5 ppm / ° C. to 5 ppm / ° C. The inorganic filler is made of, for example, silicon oxide, silicon carbide, aluminum oxide, aluminum nitride, or aluminum hydroxide.

  Here, a method for measuring the coefficient of thermal expansion of the insulating layer 6 will be described. In order to measure the coefficient of thermal expansion of the insulating layer 6, for example, a sample having a side length of 15 mm and a thickness of 3 mm is cut out from the insulating layer 6. Then, the sample is attached to an existing coefficient of thermal expansion measuring device, and a temperature from room temperature to about 150 ° C. (temperature not higher than the glass transition temperature of the resin) is applied to the sample, and the change in the sample size is measured. In this way, the coefficient of thermal expansion of the resin layer can be calculated.

  In addition, when the component-embedded substrate 2 is small and a sample having a size that can be attached to an existing thermal expansion coefficient measuring device cannot be cut out, the sample is cut out within the cuttable range, and the temperature changes from room temperature to about 150 ° C. The change in sample dimensions can be measured by a mechanical or optical method, and the coefficient of thermal expansion can be calculated in the same manner as described above. For example, a sample can be set in a sample holder of a coefficient of thermal expansion measuring device, and the dimensional change of the sample can be measured by laser interferometry. The measurement is performed according to JIS R 3251-1995.

  In addition, the dimensional change accompanying the temperature change of the sample is, for example, measured with a laser interferometer using a He—Ne laser as a light source on the order of nanometers with reference to the wavelength of the laser beam. The expansion rate can also be obtained. Note that the measurement may be performed by vapor-depositing a material that reflects laser light such as gold or platinum on the sample surface.

  The component-embedded substrate 2 includes a through hole S that penetrates in the vertical direction, a through hole conductor 10 that is formed along the inner wall surface of the through hole S, and a resin body 11 that is filled in a region surrounded by the through hole conductor 10. Is formed. The through-hole conductor 10 is made of a conductive material such as copper, silver, gold, aluminum, nickel, or chromium. The resin body 11 is for filling the remaining space surrounded by the through hole S. The resin body 11 is made of, for example, polyimide resin, acrylic resin, epoxy resin, cyanate resin, fluorine resin, silicon resin, polyphenylene ether resin, or bismaleimide triazine resin. By filling the remaining space surrounded by the through hole S with the resin body 11, a part of the conductive layer 8 can be formed immediately above the resin body 11, and the distance of the wiring routed from the through hole conductor 10 to the conductive layer 6 Thus, the component-embedded substrate 2 can be downsized. In addition, by shortening the distance of the wiring, the wiring resistance can be reduced and the power consumption can be reduced.

  Further, a part of the inorganic filler 9 contained in the insulating layer 6 is embedded in the through-hole conductor 10. That is, a part of the inorganic filler 9 protrudes from the inner wall surface of the through hole S, and the contact area between the through hole conductor 10 and the inner wall surface of the through hole S is increased by covering the protruding portion with the through hole conductor 10. The adhesive strength between the two can be increased and the through-hole conductor 10 can be prevented from peeling from the inner wall surface of the through-hole S.

  The film layer 5 is formed with via conductors 12 penetrating in the vertical direction. The via conductor 12 has a function of electrically connecting the conductive layers 8 positioned above and below. The via conductor 12 is made of a conductive material such as copper, silver, gold, platinum, aluminum, nickel, or chromium. Since the via conductor 12 of the component built-in substrate 2 according to the present embodiment is formed in a region overlapping the semiconductor element 4 or the electronic component 7 in plan view, the wiring distance between the semiconductor element 4 or the electronic component 7 The wiring resistance between the two can be reduced. As a result, a consumption electrode can be suppressed.

  The electronic component 7 is provided in the insulating layer 6. Examples of the electronic component 7 include a semiconductor element, a multilayer ceramic capacitor, a thin film capacitor manufactured by a vacuum process such as sputtering, a thin film resistor or impedance, and a functional element such as a high frequency filter or a balun manufactured by combining these, MEMS Etc. can be used.

  The electronic component 7 is connected to the conductive layer 8 formed on the first film layer 5a through a connecting portion 13 made of solder or the like. An underfill 14 is formed between the electronic component 7 and the first film layer 5a in order to improve the adhesion between the electronic component 7 and the first film layer 5a. The underfill 14 is made of a material such as epoxy resin, cyanate resin or polyimide resin containing spherical silica, for example.

  For the semiconductor element 4, a material approximate to the thermal expansion coefficient of the insulating layer 6 is used. For example, silicon, germanium, gallium arsenide, gallium arsenide phosphorus, gallium nitride, or silicon carbide can be used. In addition, the thickness dimension of the semiconductor element 4 can use the thing of 0.1 mm to 1 mm, for example.

  As described above, according to this embodiment, the film layer having a small thermal expansion coefficient in the planar direction is used for the upper layer and the lower layer of the component built-in board, the thermal expansion coefficient in the planar direction of the component built-in board is reduced, and the electronic component is It can suppress that the connected film layer expand | swells greatly in a plane direction, and can suppress effectively that an electronic component peels from the conductive layer formed on the film layer. Furthermore, by covering the periphery of the electronic component with an insulating layer having a small coefficient of thermal expansion in the thickness direction, it is possible to suppress the thermal expansion of the periphery of the electronic component in the thickness direction. Peeling can be effectively suppressed. As a result, the electrical reliability of the component built-in substrate can be maintained well.

  Next, a method for manufacturing the mounting structure 1 including the component-embedded substrate 2 will be described with reference to FIGS.

  As shown in FIG. 3A, an uncured insulating layer 6x containing an inorganic filler 9 is prepared. As the insulating layer 6x, an epoxy resin, bismaleidotriazine resin, cyanate resin, or the like dissolved in an organic solvent such as toluene, acetone, or alcohol is used as a varnish. At this time, an inorganic filler 9 made of silicon oxide or the like is added to the varnish.

  The varnish is then applied to a support film such as a PET film using, for example, the die coat method or doctor blade method. Thereafter, the applied varnish can be dried to produce the insulating layer 6x. Note that the thickness of the insulating layer 6x is set to be about 1 μm to 10 μm thicker than the thickness of the built-in electronic component 7.

  Next, as shown in FIG. 3B, the through-hole H is formed in the insulating layer 6x by using, for example, laser processing or punching in a state where the insulating layer 6x after drying is attached with a support film such as a PET film. Form. The through hole H is designed to be one size larger than the electronic component 7 incorporated in plan view. In the case of laser processing, by using a trepan process that cuts out the outer periphery of the cutout shape and cuts out the inner periphery of the outer periphery, cracks are formed in the wall surface of the through-hole H and a part of the insulating layer 6x is prevented from peeling off. be able to. Thus, the insulating layer 6x in which the through hole H is formed can be prepared.

  Moreover, the film layer 5 located in the upper layer or lower layer of the component built-in substrate 2 is prepared. Here, as shown to FIG. 4 (A), the 1st film layer 5a is demonstrated. The film layer 5a is made of, for example, a polyphenylenephenylene bisbisoxazole resin or a mixture of a polyphenylenephenylene bisoxazole resin and a polyimide resin, and has a thickness of, for example, 5 μm or more and 30 μm or less.

  Then, as shown in FIG. 4B, a conductive layer 8 made of a conductive material such as copper is formed on the upper surface of the first film layer 5a by using, for example, sputtering, electroplating, or electroless plating. To do. The conductive layer 8 is formed by patterning so as to leave an unnecessary wiring portion by removing an unnecessary portion of copper by etching using a photolithography technique.

  Next, as shown in FIG. 5A, after the conductive layer 8 is formed on the first film layer 5a, the electronic component 7 is connected to the conductive layer 8 via a connecting portion 13 made of solder or the like. . The connecting portion 13 may be a conductive adhesive material in addition to a conductive metal material such as solder. Also, the conductive layer 8 is formed on the second film layer 5b in the same manner. In the present embodiment, a semiconductor element is used as the electronic component 7.

  And as shown in FIG.5 (B), the underfill 14 which consists of spherical silica and an epoxy resin, for example is filled between the electronic component 7 and the 1st film layer 5a, and the electronic component 7 is filled with the 1st film layer 5a. It sticks to. As a result, the electronic component 7 can be made difficult to peel from the first film layer 5a. The underfill 14 is made of a material having a small difference in thermal expansion coefficient from that of the electronic component 7, so that when the heat is applied to the electronic component 7 and the underfill 14 from the outside, the difference in thermal expansion between the two is reduced. The electronic component 7 can be made difficult to peel from the underfill 14. In this way, the electronic component 7 can be formed on the first film layer 5a.

  Next, as shown in FIG. 6 (A), the insulating layer 6x in which the through hole H is formed is disposed oppositely on the first film layer 5a on which the electronic component 7 is formed on the upper surface. The through hole H overlaps the electronic component 7 in plan view.

  Furthermore, on the insulating layer 6x in which the through hole H is formed, the insulating layer 6x in which the through hole H is not formed and the second film layer 5b are disposed so as to be laminated. A patterned conductive layer 8 is formed on the lower surface of the second film layer 5b.

  Then, as shown in FIG. 6B, two layers of insulating layers 6x are interposed between the first film layer 5a and the second film layer 5b, and these layers are stacked to produce a laminate. . After lamination, a gap G is formed between the electronic component 7 and the insulating layer 6x.

  Next, as shown in FIG. 7A, the first film layer 5a to the second film layer 5b are heated and pressed to melt a part of the uncured insulating layer 6x. Then, a part of the molten insulating layer 6x is filled in the gap G, and the side surface of the electronic component 7 and the inner wall surface of the insulating layer 6x are brought into contact with each other. Then, the melted insulating layer 6x is cured. In addition, let the insulating layer 6x after hardening be the insulating layer 6. FIG.

  Moreover, when pressurizing the laminate, stress is applied to the electronic component 7 from above and below. However, since the underfill 14 is filled between the electronic component 7 and the first film layer 5a, Part of the applied stress can be absorbed by the underfill 14, and the electronic component 7 can be prevented from being damaged.

  Next, as shown in FIG. 7B, through holes S can be formed by performing mechanical drilling or laser processing on the laminate. The through hole S is formed through the second film layer 5b to the first film layer 5a.

  Further, a part of the inorganic filler 9 contained in the insulating layer 6 is exposed from the inner wall surface of the through hole S. In the insulating layer 6, the content of the inorganic filler 9 is adjusted so that the inorganic filler 9 is exposed from the through hole S. The through hole S is set to have a diameter of 30 μm or more and 300 μm or less.

  Next, as shown in FIG. 8A, the through-hole conductor 10 can be formed on the inner wall surface of the through hole S by performing electroless plating on the inner wall surface of the through hole S. The through-hole conductor 10 is made of a conductive material such as copper, silver, or tin. Then, as shown in FIG. 8B, the region surrounded by the through-hole conductor 10 of the through-hole S can be filled with a resin body 11 made of, for example, an epoxy resin by using, for example, a printing method. it can.

Further, as shown in FIG. 9A, a part of the conductive layer 8 is formed directly on and below the resin body 11 by using, for example, an electroless plating method or an electroplating method. Thereafter, as shown in FIG. 9B, a laser beam is irradiated onto a region overlapping the conductive layer 8 formed in the laminated body in a plan view using, for example, a YAG laser device or a CO ₂ laser device. Then, a via hole B penetrating the insulating layer 6 is formed. The via hole B is formed by exposing a part of the conductive layer 8 by irradiation with laser light from a direction perpendicular to the insulating layer 6. In addition, the via hole B is formed in a reverse taper shape whose lower part is narrower than the upper part.

  Then, as shown in FIG. 10, via conductor 12 can be filled into via hole B by using an electroless plating method. The via conductor 8 is made of a conductive material such as copper, for example. In this way, the component built-in substrate 2 can be manufactured.

  The mounting structure 1 shown in FIG. 2 can be manufactured by flip-chip mounting the semiconductor element 4 on the component-embedded substrate 2 via the bumps 3.

  As described above, according to the method for manufacturing a wiring board according to the embodiment of the present invention, the thermal expansion coefficient in the planar direction along the surface of the component built-in board and the thermal expansion coefficient in the thickness direction of the component built-in board are matched. Thus, it is possible to make the component-embedded board difficult to thermally expand due to heat from the outside. As a result, it is possible to effectively suppress peeling of the electronic component from the conductive layer. As a result, the electrical reliability of the component built-in substrate can be maintained well.

  In addition, this invention is not limited to the above-mentioned form, A various change, improvement, etc. are possible in the range which does not deviate from the summary of this invention. For example, after forming the through hole S and the via hole B, the through hole conductor 8 and the via conductor 12 may be formed in both holes at once using, for example, an electroless plating method.

1 is a plan view of a mounting structure including a component built-in substrate according to an embodiment of the present invention. It is sectional drawing of the mounting structure containing the component built-in board | substrate which concerns on embodiment of this invention. 3A and 3B are cross-sectional views illustrating a method for manufacturing a mounting structure including a component built-in substrate according to an embodiment of the present invention. 4A and 4B are cross-sectional views illustrating a method for manufacturing a mounting structure including a component built-in substrate according to an embodiment of the present invention. 5A and 5B are cross-sectional views illustrating a method for manufacturing a mounting structure including a component built-in substrate according to an embodiment of the present invention. 6A and 6B are cross-sectional views illustrating a method for manufacturing a mounting structure including a component built-in substrate according to an embodiment of the present invention. 7A and 7B are cross-sectional views illustrating a method for manufacturing a mounting structure including a component built-in substrate according to an embodiment of the present invention. FIGS. 8A and 8B are cross-sectional views illustrating a method for manufacturing a mounting structure including a component built-in substrate according to an embodiment of the present invention. 9A and 9B are cross-sectional views illustrating a method for manufacturing a mounting structure including a component built-in substrate according to an embodiment of the present invention. FIG. 10 is a cross-sectional view illustrating a method for manufacturing a mounting structure including a component-embedded substrate according to an embodiment of the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Mounting structure 2 Component built-in board 3 Bump 4 Semiconductor element 5 Film layer 5a 1st film layer 5b 2nd film layer 6 Insulating layer 7 Electronic component 8 Conductive layer 9 Inorganic filler 10 Through-hole conductor 11 Resin body 12 Via conductor 13 Connection Part 14 Underfill S Through hole

Claims (8)

A first film layer having a thermal expansion coefficient in the plane direction smaller than that in the thickness direction;
A conductive layer formed on the first film layer;
An insulating layer formed on the conductive layer and having a planar thermal expansion coefficient larger than the planar thermal expansion coefficient of the first film layer;
An electronic component provided in the insulating layer and connected to the conductive layer;
A component-embedded substrate, comprising: a second film layer formed on the insulating layer and having a thermal expansion coefficient in a planar direction smaller than a thermal expansion coefficient in a thickness direction. The component built-in substrate according to claim 1,
A part-embedded substrate, wherein a part of the conductive layer is embedded in the first film layer. The component built-in substrate according to claim 1,
A through-hole conductor penetrating from the lower surface of the first film layer to the upper surface of the second film layer is formed;
The through hole conductor electrically connects a first conductive layer formed on a lower surface of the first film layer and a second conductive layer formed on an upper surface of the second film layer. Built-in board. In the component built-in substrate according to claim 3,
A component-embedded substrate, wherein an inorganic filler is provided in the insulating layer, and a part of the inorganic filler is embedded in the through-hole conductor. The wiring board according to claim 3,
The through-hole conductor is formed along the inner wall surface of the through-hole penetrating from the lower surface of the first film layer to the upper surface of the second film layer, and the region surrounded by the through-hole conductor has a resin A component-embedded board characterized by being filled with a body. The component built-in substrate according to claim 1,
The component-embedded substrate, wherein a thermal expansion coefficient in a planar direction of the second film layer is larger than a thermal expansion coefficient in the planar direction of the second film layer. The component built-in substrate according to claim 1,
The component-embedded substrate, wherein a thickness of the insulating layer is larger than a sum of thicknesses of both the first film layer and the second film layer disposed on both upper and lower sides thereof. The component built-in substrate according to claim 1,
The component-embedded substrate, wherein the first film layer and the second film layer are made of polyimide benzoxazole resin or polyparaphenylene benzbisoxazole resin, and the insulating layer is made of epoxy resin.

Images