JP2009288293A - Optical filter, method for depositing film of the same and apparatus for adjusting quantity of image pickup light - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an optical filter having superior image quality performance, a method for depositing a film of the optical filter and an apparatus for adjusting the quantity of image pickup light. <P>SOLUTION: A method for forming the optical filter includes: a light attenuating substrate plate molding step of molding a resin material, in which a light attenuating material consisting of a dyestuff or a pigment is kneaded, to obtain a light attenuating substrate plate; a filter external form stamping-out step of stamping out the light attenuating substrate plate while leaving a connection part as it is to obtain a plurality of predetermined optical filter plates; a light dimming film layer forming step of depositing a dielectric film and a metallic film cumulatively on at least one surface of the stamped-out optical filter plate; a light dimming/reflecting layer coating step of forming a light dimming/reflecting layer of a polymer, whose main chain is composed of a one-dimensional silicon-silicone bond, on the light dimming film layer-formed surface and end face of the stamped-out optical filter plate; an ultraviolet irradiation step of irradiating the formed light dimming/reflecting layer with ultraviolet light; and a withdrawing step of cutting off respective optical filter members from the light attenuating substrate plate after irradiation with ultraviolet ray, as optical filters. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to an imaging light amount adjustment device that is mounted on a camera or other optical device and performs light amount adjustment, in particular, an optical filter that is used in the imaging light amount adjustment device and adjusts the amount of light having a specific wavelength, and film formation of the optical filter. Regarding the method.

  In general, this type of optical filter is widely used as an ND filter (Neutral Density Filter) in various imaging apparatuses. This ND filter forms a thin film having excellent light absorption characteristics on a resin or glass substrate. This ND filter is formed with a single thin film having a uniform concentration as a whole, a multi-layered thin film in which the concentration changes in a stepwise manner for each region, and a further concentration. It is known that the film is formed with a gradation thin film that continuously changes (gradually decreases).

  In recent years, as the resolution of an imaging apparatus increases, image quality degradation such as image blur due to the influence of diffracted light tends to be noticeable when the amount of light is reduced under bright subject conditions. Thus, for example, as disclosed in Patent Document 1, it has been proposed to attach an ND filter to an aperture blade that adjusts the amount of light as shown in FIG. 3 to suppress a diffraction phenomenon that occurs at the time of small aperture.

Further, for example, in the case of a single density ND filter as disclosed in Patent Document 2 (see FIG. 1), diffraction occurs due to the small stop formed by the end portion of the ND filter and the aperture shape, and the image quality is improved. In order to prevent the deterioration, a gradation filter (see FIG. 3) is proposed in which the density gradually decreases gradually toward the opening diameter side.

  In addition, as a film forming method for producing such an optical filter, as disclosed in, for example, Patent Document 3 that is also used in Patent Documents 1 and 2, a target that is a film forming material in a vacuum is used. A sputtering method is used in which an inert gas ion such as argon is collided with the film and a film-forming gas ion that has jumped out forms a film on a substrate.

Moreover, as disclosed in Patent Document 4, two methods of forming a film using a vacuum film forming apparatus are widely used.

And, as shown in FIG. 4 of the same document, the light quantity adjustment filter (29) of the light quantity control blade (26) corresponding to the optical filter has a film formation structure of the optical filter disclosed in the patent document 1. An adhesive layer (35) made of silicon monoxide or silicon dioxide, a metal layer (36) made of aluminum or an aluminum alloy, respectively, on both surfaces of a base part (34) made of PET (polyethylene terephthalate) used as a material; Dielectric layer (37) made of silicon dioxide, niobium layer (38) made of niobium, dielectric layer (39) made of silicon dioxide, niobium layer (40) made of niobium and dielectric layer (41) made of silicon dioxide Are sequentially laminated, and a multilayer coating (42) is formed by these layers.
JP 2006-126234 A JP 2005-338385 A JP 2001-064772 A JP 2005-345746 A

  As disclosed in Patent Document 4 described above, in this type of optical filter, a film forming method using a vacuum evaporation apparatus is common. In the case of this vacuum vapor deposition apparatus, it is possible to set usually six or more targets, which are vapor deposition materials, at a time in the film forming chamber depending on the apparatus configuration. The targets are ionized and scattered by a resistance heating method or an electron beam heating method. Vapor deposition is planned.

  For this purpose, a target corresponding to each film formation is heated, and an oxide underlayer (dielectric film) is first formed on a substrate plane, and a light absorption layer (metal film) is stacked thereon. As a result, a light-reducing film layer is formed. Further, an antireflection layer (AR coating layer) is formed on the light reducing film layer.

  Then, MgF2 is specifically formed as this antireflection layer (AR coating layer).

  However, an optical filter formed by a conventional film forming method has the following problems. First, when film-forming ions are formed on a substrate using a vacuum deposition apparatus, a sputtering apparatus, etc., if an optical filter having an appropriate transmittance is obtained, the thickness of each film-forming layer is increased or each film-forming ion is formed. The dielectric film layers and metal film layers forming the layers are alternately stacked. When the film thickness of each film formation layer is increased, a low reflection characteristic spot is likely to occur, and the image quality is likely to be deteriorated. In addition, when each of the film formation layers is stacked, it is necessary to perform film formation adjustment management for each film formation condition for each film formation.

  In addition, when the formed optical filter substrate is attached to the diaphragm blades of the imaging light amount adjusting device and used as an optical filter, the formed optical filter substrate is appropriately cut in a die shape and used. Because of this die cutting process, a non-film-formed background is exposed on the end face of the optical filter, and light is reflected and transmitted at the end face portion to reach the imaging surface, resulting in degradation of image quality.

  The present invention has been made in view of the above-mentioned problems, and is easy to make and control film formation adjustment during film formation, and reduces reflection on the end face of the optical filter, and thus has excellent image quality performance. The present invention provides an optical filter film forming method and an imaging light amount adjusting device.

  In order to achieve the above object, an optical filter molding method according to the present invention is a substrate in which a resin material kneaded with a light attenuating material composed of a dye or pigment that attenuates transmitted light is formed into a plate shape to form a light attenuating substrate plate. A plate forming step, a filter outer shape die cutting step in which the optical attenuation substrate plate is stamped into a plurality of optical filter shapes by pressing into a predetermined optical filter shape while leaving a part of the connecting portion, and the optical attenuation that has been cut out A light-reducing film layer forming step for forming a light-reducing film layer formed by laminating a dielectric film and a metal film on at least one surface of the substrate plate; and a surface and an end face of the light-attenuating substrate plate on which the light-reducing film layer is formed An anti-reflection coating process for forming a polymer polymer anti-reflection coating layer, an ultraviolet irradiation process for irradiating the anti-reflection coating layer with ultraviolet light, and light reduction after the ultraviolet irradiation. And extracting step as a release form optical filter off the optical filter member from the substrate plate consists of capital. The anti-reflection coating layer is formed by dipping polysilane having a main chain structure soluble in an organic solvent and composed of one-dimensional silicon-silicon (Si-Si) bonds.

  The optical filter according to the present invention includes a light attenuating substrate plate made of a resin kneaded with a light attenuating material made of a dye or pigment that attenuates transmitted light, and a dielectric film on at least one surface of the light attenuating substrate plate. The main chain structure is composed of one-dimensional silicon-silicon (Si-Si) bonds on the surface and end face of the light-reducing film layer formed by laminating the metal film and the light-attenuating substrate plate on which the light-reducing film layer is formed. Formed with a low-reflective coating layer made of a polysilane soluble in an organic solvent, which is a high molecular polymer, placed in the imaging optical path of the imaging light amount adjusting device, and attached to the diaphragm blades for adjusting the imaging light amount .

  In order to achieve the above-mentioned object, the present invention uses a resin material kneaded with a light-attenuating material made of a dye or pigment that attenuates the light transmitted through the substrate plate as a plate. Each film of the light-reducing film layer is adjusted by giving the film itself attenuation characteristics and adjusting the film formation so that the final desired attenuation characteristic is obtained by the light-reducing film layer formed on the substrate plate. The thickness of the layer is appropriate for reflecting and attenuating thickness, and it is possible to form a film with a small number of layers, and it is easy to make, and the surface reflectivity is attenuated by UV irradiation and stable, low reflection dereflection. By forming the coat layer, there is an effect that an optical filter having few anti-reflection characteristics and excellent image quality performance can be obtained.

  In addition, the present invention provides a light-attenuating substrate plate by forming the anti-reflection coating layer in a state in which the substrate plate is cut into a plurality of optical filter shapes by pressing into a predetermined optical filter shape while leaving a part of the connection portion. An anti-reflection coating layer is also formed on the end face of the optical filter separated from the optical filter, and an optical filter that can reduce reflection from the end face of the optical filter can be provided.

  The present invention will be described in detail below based on the preferred embodiments shown in the drawings. 1 to 3 show the configuration of an optical filter according to the present invention, FIGS. 4 to 6 show a method for forming the optical filter, and FIGS. 7 to 14 show the manufacturing of the optical filter using the film forming method. FIG. 15 is an explanatory diagram for explaining each of the imaging light quantity aperture devices using the optical filter made by the film forming device.

[Configuration of optical filter]
First, the film layer structure of the optical filter according to the present invention will be described with reference to FIGS.

FIG. 1 illustrates the main structure of an optical filter, in which 10 is a substrate plate (Base Film), and a transparent layer that improves the light reflection characteristics for forming a light-reducing film layer on one surface of the substrate plate 10. A dielectric film layer 21 made of silicon dioxide (SiO 2) and a niobium (Nb) film stacked thereon as a metal film 22 rich in light absorption properties are formed, and a dimming film layer is formed on the other surface. A film layer structure in which silicon dioxide (SiO 2) is stacked as a dielectric film layer 23 made of a transparent layer for improving light reflection characteristics, and titanium (Ti) is stacked as a metal film 24 rich in light absorption characteristics thereon. It consists of. As shown in FIG. 3, the actual light-reducing film layer has a number of layers and a thickness of each layer so that the dielectric film layers 21 and 23 and the metal films 22 and 24 can obtain the required transmittance alternately. Films are adjusted as necessary.

  Particularly, the metal films 22 and 24 of the light-reducing film layer formed on both surfaces of the substrate plate 10 have reciprocal characteristics in light transmission characteristics at least in the entire visible light region, and transmit the front and back surfaces of the substrate plate. Different metal materials are selected so as to have substantially uniform light transmission characteristics over the entire visible light range.

FIG. 2 shows another embodiment. The difference from the film layer structure of FIG. 1 is that an oxide formed by oxidizing a metal material constituting the metal film 24 on the other surface as the dielectric film layer 21 using a target. Titanium (TiO2) is deposited, and the dielectric film layer 23 is formed by depositing niobium oxide (NbO) formed by oxidation using a metal material constituting the metal film 21 on the other side as a target. By using the metal materials of the metal layers 22 and 24 on the opposite surfaces as 21 and 23, it is possible to form a light-reducing film layer even in a film forming apparatus that can attach only two types of targets described later. .

  FIG. 3 shows a film formation configuration that is closer to implementation, and the optical filter (ND filter) 43 of the present invention has a dimming characteristic on the transparent substrate plate (film formation base substrate) 10 as shown in the figure. The light-reducing film layer 20 is formed on the front and back surfaces. The light-reducing film layers 20A and 20B formed on the front and back surfaces are composed of a light absorption layer 21 and an intermediate layer 22, and are formed in a plurality of stages (six layers are shown in the figure) depending on the application. . The light absorption layer 21 (21a, 21b, 21c) is made of a metal film rich in light absorption characteristics, and is formed on the substrate plate 10 as a translucent layer having a concentration. The intermediate layer 22 (22a, 22b, 22c) is made of a dielectric, and is formed on the light absorbing layer 21 as a transparent layer that improves the light reflection characteristics.

  The illustrated light-reducing film layers 20A and 20B are formed in a single-concentration region 20a having a uniform thickness and a uniform transmissivity, and a gradation region 20b in which the film thickness gradually decreases. A coating layer 23 described later is formed on the uppermost dielectric film layer (intermediate layer) 22c. The film forming materials of these metal film layer (light absorption layer) 21, dielectric film layer (intermediate layer) 22, and coating layer 23 will be described later.

  The optical filter (ND filter) 43 shown in FIG. 3 has the dielectric film layers (intermediate layers) 21a to 21d on one side 20A as oxides, nitrides or fluorides of vapor-deposited metal targets on the other side. Titanium TiO2) is formed, and the metal film layers (light absorption layers) 22a to 22c are made of vapor-deposited metal (shown is niobium Nb), and the dielectric film layer (intermediate layer) 23a and the other surface 20B 23b is formed with an oxide, nitride, or fluoride of an evaporation metal target on the other surface (as shown in the figure is niobium oxide NbO), and metal film layers (light absorption layers) 24a and 24b are formed as evaporation metal (as shown). Indicates the case of titanium (Ti). Hereinafter, the material of each film layer will be described.

In addition to the combination of niobium Nb and titanium Ti, the vapor-deposited metal target has reciprocal light transmission characteristics at least in the entire visible light region, and is substantially in the entire visible light region that transmits the front and back surfaces of the substrate plate. Uniform light transmission characteristics can be obtained. For example, aluminum Al, vanadium V, tungsten W, tantalum Ta, silicon Si, chromel (nickel-chromium alloy), etc. are used as vapor deposition metal targets. It is not limited to metal elements and metalloid elements, and can be appropriately selected according to light transmission characteristics.

[Selection of substrate plate material]
The above-described substrate plate 10 is made of a transparent or translucent synthetic resin plate. As the material, for example, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), norbornene resin, cycloolefin resin, or the like is used. As the other substrate material, a suitable material is selected according to the application.

[Selection of metal substances]
Niobium (Nb) is used for the metal film layer (light absorption layer) 22 described above, and titanium (Ti) is used for the metal film layer (light absorption layer) 24 on the other side as a vapor deposition metal target.

[Selection of dielectric material]
The dielectric film layer (intermediate layer) 21 described above is composed of an oxide of titanium (Ti), and the dielectric film layer (intermediate layer) 23 on the other surface is composed of an oxide of niobium (Nb). For this reason, the above-mentioned vapor deposition metal target is used. It should be noted that the formation of each dielectric film layer (intermediate layer) using this vapor deposition metal target is designed so that film formation is possible due to the limitation of the number of targets that can be attached to a film formation apparatus described later.

[Selection of anti-reflection coating layer]
As the above-described anti-reflection coating layer 25, a hard or water-repellent material such as magnesium fluoride is generally used as a coating material for this type of optical filter. After the light-reducing film layer is formed, the film is taken out from the film formation chamber, and is formed by dipping by dipping the film-treated substrate plate 10 in a polysilane polymer polymer solution.

As a condition that can be used as a coating material for the anti-reflection coating layer 25, it is possible to first select a value of the refractive index n2 calculated by the following conditional expression or a polymer polymer close to that value.
Conditional expression n2 = √n1
However, n1 is the refractive index of the film formed by coating the anti-reflection coating layer 25. In this case, it becomes the dielectric film layers (intermediate layers) 21 and 23.

  Actually, polysilane having a refractive index n2≈1.23 is coated. In order to maintain the film thickness of the anti-reflection coating layer 25 at a desired thickness, the viscosity of the solution and the speed at which the substrate plate 10 that has been subjected to film formation is extracted from the solution are adjusted.

Further, the anti-reflection coating layer 25 formed of a polysilane polymer is provided with a step of irradiating with ultraviolet rays in order to stabilize the refractive index and adjust it to a low refractive index after the dipping step.

[Configuration of deposition system]
Next, a film forming apparatus for forming the light reducing film layer 20 on the substrate plate 10 described with reference to FIG. 3 will be described with reference to FIGS. 7 to 9 show a reactive sputtering apparatus and the principle of film formation. FIG. 7 shows a first film forming apparatus having a structure in which an opening / closing door is provided on the peripheral surface of the rotary drum 31 and the substrate plate 10 is attached / detached through the opening / closing door. It can be installed in two places on the left and right. FIG. 8 is a central sectional view of the first film forming apparatus. Further, FIG. 9 shows a second film forming apparatus. The difference from the first film forming apparatus is a structure in which the rotary drum 31 is pulled out to the front side of the paper and the substrate plate 10 is attached and detached. It can be attached to the left and right and the upper part.

[Description of Second Film Forming Apparatus]
First, the second film forming apparatus shown in FIG. 9 will be described. As shown in the figure, this apparatus includes an outer case 30 a that forms a film forming chamber 30, a cylindrical rotating drum 31 that is rotatably incorporated in the film forming chamber 30, and a distance from the rotating drum 31. And a reactive gas generation chamber 39 for injecting / exhausting oxygen ions (nitrogen ions or fluorine ions) into the film forming chamber 30.

  The inside of the film forming chamber 30 is formed in a vacuum, and for this purpose, a vacuum pump (not shown) is provided. The film forming chamber 30 is divided into a plurality of areas 36 a to 36 d by a shielding plate 37. In the figure, the first area 36a for sputtering the first target 32a for forming the metal film layer (light absorption layer) 22 described in FIG. 3 and the metal film layer (light absorption layer) on the back surface of the substrate plate 10 are illustrated. A second area 36b for sputtering a second target 32b for depositing 24, a third area 36c for sputtering a third dielectric target 32c for depositing dielectric film layers (intermediate layers) 21, 23, It is divided into a fourth area 36d that irradiates the active gas. A pair of sputter electrodes 35a and 35b are built in the first, second and third areas 36a to 36c, respectively.

  The pair of sputter electrodes 35a and 35b are connected to an AC power source, and are arranged so that one is a cathode and the other is an anode. Each sputter electrode 35a, 35b is connected to a power supply coil 35c so that an alternating voltage is applied. A target 32 (32a to 32c) is mounted on each of the sputter electrodes 35a and 35b in the first, second and third areas 36a to 36c. The target 32 is made of a plate material and constitutes a planar vapor deposition source. Further, an inert gas (operating gas) such as argon is introduced into the first, second, and third areas 36a to 36c through a controller 38. 38 g shown is an argon gas supply cylinder.

  A reactive gas generation chamber 39 is provided in the fourth area 36d, and active gas (oxygen gas, nitrogen gas, fluorine gas, etc.) is supplied from a supply cylinder 39g via a controller 39c. The gas from the supply cylinder 39g is converted into plasma and irradiated into the fourth area 36d.

With such an apparatus configuration, the rotary drum 31 is rotated at a predetermined speed, and the third target 32c in the third area 36c is sputtered to deposit a dielectric film layer (for example, Si) on the substrate plate 10. When the rotary drum 31 is positioned in the fourth area 36d, the substrate is irradiated with an active gas (for example, O ₂ ). Then, the dielectric film layer 21a on the substrate plate is oxidized to form an oxide (eg, SiO ₂ ) film. The rotating drum 31 is continuously rotated until the film of the dielectric film layer 21a reaches a predetermined thickness, thereby generating a film.

  After the dielectric film layer 21a having a predetermined thickness is formed on the substrate plate 10 as described above, the metal target 32a is sputtered each time the substrate plate 10 passes through the first area 36a by the rotation of the rotary drum 31. Then, a metal film layer 22 a (for example, Nb) is deposited on the metal film layer 22 a previously formed on the substrate plate 10. Similarly, the rotating drum 31 is continuously rotated until the coating film of the metal film layer 22a reaches a predetermined thickness to generate a coating film.

  In this way, the dielectric film layers (intermediate layers) 21a to 21d and the metal film layers (light absorption layers) 22a to 22c are alternately stacked to form a plurality of layers.

Similarly, after reversing the front and back of the substrate plate 10 described later, the rotating drum 31 is rotated at a predetermined speed, and the third target 32c in the third area 36c is sputtered to form the dielectric film layer (for example, Si) on the substrate. A film is deposited on the plate 10. When the rotary drum 31 is positioned in the fourth area 36d, the substrate is irradiated with an active gas (for example, O ₂ ). Then, the dielectric film layer 23a on the substrate plate is oxidized to form a film of oxide (for example, SiO ₂ ). The rotating drum 31 is continuously rotated until the coating film of the dielectric film layer 23a reaches a predetermined thickness to generate a coating film.

  As described above, after the dielectric film layer 23a having a predetermined thickness is formed on the substrate plate 10 on the back surface, the second plate 36 is passed through the second area 36b each time the substrate plate 10 passes by the rotation of the rotary drum 31. The target 32b is sputtered to deposit a metal film layer 24a (for example, Ti) on the metal film layer 23a previously formed on the substrate plate 10. Similarly, the rotating drum 31 is continuously rotated until the coating film of the metal film layer 24a reaches a predetermined thickness, thereby generating a coating film.

  In this way, dielectric film layers (intermediate layers) 21a to 21d and metal film layers (light absorption layers) 22a to 22c are alternately stacked on the surface of the substrate plate 10, and the dielectric film layers are formed on the back surface. (Intermediate layers) 23a to 23c and metal film layers (light absorption layers) 24a and 24b are alternately stacked in a plurality of layers.

[Description of First Film Forming Apparatus]
Next, the first film forming apparatus shown in FIG. 7 will be described. As shown in the figure, the first film forming apparatus includes an outer case 30a that forms the film forming chamber 30, a cylindrical rotary drum 31 that is rotatably incorporated in the film forming chamber 30, A sputter electrode 35 disposed at a distance from the rotating drum 31 and a reactive gas generation chamber 39 for injecting / exhausting oxygen ions (nitrogen ions or fluorine ions) into the film forming chamber 30 are configured. .

  The major difference in structure with the second film forming apparatus is that the third target 32c for forming the dielectric film layers (intermediate layers) 21 and 23 is sputtered due to the difference in the exchange method of the substrate plate 10. The area 36c cannot be disposed. Naturally, the film forming methods of the dielectric film layers (intermediate layers) 21 and 23 described below are also different.

Therefore, the film forming method will be described. In film formation by this apparatus configuration, the rotating drum 31 is rotated at a predetermined speed, and the second target 32b in the second area 36b is sputtered to deposit a metal film layer (for example, Ti) on the substrate plate 10. When the rotary drum 31 is positioned in the fourth area 36d, the substrate is irradiated with an active gas (for example, O ₂ ). Then, the metal film layer 21a on the substrate plate is oxidized to produce a dielectric film layer 21a film made of a transparent oxide (for example, TiO 2). The rotating drum 31 is continuously rotated until the film of the dielectric film layer 21a reaches a predetermined thickness, thereby generating a film.

  After the dielectric film layer 21a having a predetermined thickness is formed on the substrate plate 10 as described above, the first target 32a is passed each time the substrate plate 10 passes through the first area 36a by the rotation of the rotary drum 31. The metal film layer 22a (for example, Nb) is deposited on the metal film layer 22a previously formed on the substrate plate 10 by sputtering. Similarly, the rotating drum 31 is continuously rotated until the coating film of the metal film layer 22a reaches a predetermined thickness to generate a coating film.

  In this way, the dielectric film layers (intermediate layers) 21a to 21d and the metal film layers (light absorption layers) 22a to 22c are alternately stacked to form a plurality of layers.

Similarly, after reversing the front and back of the substrate plate 10 to be described later, the rotating drum 31 is rotated at a predetermined speed, and the first target 32a in the first area 36a is sputtered to form a metal film layer (for example, Nb) on the substrate plate. 10 is deposited. When the rotary drum 31 is positioned in the fourth area 36d, the substrate is irradiated with an active gas (for example, O ₂ ). Then, the metal film layer 23a on the substrate plate 10 is oxidized to form a film of the dielectric film layer 23a made of a transparent oxide (for example, Nb2O5). The rotating drum 31 is continuously rotated until the coating film of the dielectric film layer 23a reaches a predetermined thickness to generate a coating film.

  As described above, after the dielectric film layer 23a having a predetermined thickness is formed on the substrate plate 10 on the back surface, the second plate 36 is passed through the second area 36b each time the substrate plate 10 passes by the rotation of the rotary drum 31. The target 32b is sputtered to deposit a metal film layer 24a (for example, Ti) on the metal film layer 23a previously formed on the substrate plate 10. Similarly, the rotating drum 31 is continuously rotated until the coating film of the metal film layer 24a reaches a predetermined thickness, thereby generating a coating film.

  In this way, dielectric film layers (intermediate layers) 21a to 21d and metal film layers (light absorption layers) 22a to 22c are alternately stacked on the surface of the substrate plate 10, and the dielectric film layers are formed on the back surface. (Intermediate layers) 23a to 23c and metal film layers (light absorption layers) 24a and 24b are alternately stacked in a plurality of layers.

[Film formation with gradation area]
The case where the single concentration area | region 20a and the gradation area | region 20b are formed in the surface of the optical filter (ND filter) 43 shown in FIG. 3 is shown. The gradation region 20b is formed by the mask plate 33 shown in FIG. In the figure, when the substrate plate 10 is mounted on the rotating drum 31, the mask plate 33A is set in combination. A film component is sputtered from the planar evaporation source (each of the above-mentioned targets) parallel to the surface of the substrate plate 10 through the mask plate 33 to form a film. At this time, a film-forming gap d having a predetermined interval is formed between the mask plate 33A and the substrate plate 10 as shown in FIG. In the substrate plate 10 corresponding to the mask opening 33a of the mask plate 33A, a single concentration region 20a and a gradation region 20b in which the film thickness decreases linearly gradually are formed around the upper and lower edges of the mask opening 33a. .

[Deposition of backside with single concentration area]
Moreover, the case where only the single concentration area | region 20a is formed in the back surface of the optical filter (ND filter) 43 shown in FIG. 3 is shown. Only the single concentration region 20a is formed by the mask plate 33B shown in FIG. In the figure, when the substrate plate 10 is mounted on the rotary drum 31, the mask plate 33B is set in combination with the previous mask plate 33A. Then, when the film formation process on the previous surface is completed, the substrate plate 10 is rotated 180 degrees so that the mask plate 33B faces the planar vapor deposition source (each of the above targets), and in this state, the mask plate 33B. A film component is sputtered from a planar vapor deposition source (each of the above-mentioned targets) parallel to the back surface of the substrate plate 10 to form a film. At this time, it is not always necessary to provide the film-forming gap d at a predetermined interval shown in FIG. 11 between the mask plate 33B and the substrate plate 10, and the substrate plate 10 corresponding to the mask opening 33b of the mask plate 33B has a single concentration region. 20a is formed.

[Masking method and mask plate structure]
Therefore, an overview of the mask plates 33A and 33B used when the light reducing film layers 20A and 20B having optical characteristics are formed on the substrate plate as described above is as shown in FIG. Then, as shown in FIG. 5, a light-reducing film layer 20A is formed on the surface of the substrate plate 10 in which gradation regions 20b are formed at the upper and lower edges of each mask opening 33a opened in the mask plate 33A. . Further, as shown in FIG. 6, a light-reducing film layer 20B having only a single concentration region 20a is formed on the back surface of the substrate plate 10 by a mask opening 33b opened in the mask plate 33B.

[Gap adjustment of mask plate]
Further, as shown in FIG. 4, the film formation gap d of the mask plate 33A described above with reference to FIG. 11 is appropriately adjusted depending on the target material. For example, as an adjustment in this case, the film formation gap is adjusted according to the atomic weight of the target material, and the interval in the case of the niobium Nb with an atomic weight of 41 is actually set to 3 mm ± 1 mm within the interval of 3 mm to 5 mm. When the mask plate 33A is attached to the surface of the substrate plate 10, the spacing in the case of titanium Ti having an atomic weight of 22 is adjusted to 4 mm ± 1 mm and the spacing in the case of silicon Si having an atomic weight of 14 is adjusted to 5 mm ± 1 mm. .

[Configuration of substrate holder]
The above-mentioned substrate holder 45 fixes and supports one or a plurality of substrate plates 10 (size that can be easily processed into an ND filter member after film formation and the number suitable for the outer shape) as shown in FIGS. 8 and 12 to 14. It is configured to do. The substrate holder 45 is configured by a cross-shaped frame so as to sandwich the peripheral edge of the substrate plate 10 from the front and the back. Reference numeral 11 in the figure denotes film forming openings formed by this frame frame, which are respectively formed on the front and back surfaces of the substrate plate 10. Mask plates 33A and 33B are mounted on the substrate holder 45 as appropriate at intervals of 3 mm to 5 mm according to the film formation gap d corresponding to the film formation target described above on the front and back of the substrate plate 10. The mask plate 33B is a single-concentration film formation, and the film formation gap d does not need to be adjusted according to the film formation target.

[Mask plate switching configuration]
As shown in FIGS. 12 to 14, the mask plates 33A and 33B face each other on the front and back of the substrate plate 10 on a substrate holder 45 that is rotatably supported by the rotary drum 31 with a pair of upper and lower rotary support shafts 46a and 46b. Attached. As shown in FIG. 8, the initial rotation of the rotary drum 31 rotated by the drive motor M is transmitted via the gear 48 and the gear 47, and the mask plate 33 </ b> A is formed on the film formation target 32 by the normal rotation of the rotary drum 31. In contrast, the rotation of the rotary drum 31 causes the mask plate 33 </ b> B to be reversed 180 degrees so as to face the film formation target 32. The mask plates 33A and 33B are reversed by the initial rotation of the rotary drum 31, and the subsequent rotation of the rotary drum 31 is cut off by a clutch (not shown) and a position restricting member. The 180 degree inversion state is maintained.

[Description of deposition method]
Next, a procedure for forming the light-reducing film layers 20A and 20B on the front and back surfaces of the substrate plate 10 with the film forming apparatus (sputtering apparatus) described above will be described.

"Board setting process"
First, as shown in FIGS. 7 and 9, the film forming chamber 30 is opened. In the case of FIG. 7, the target materials 32a and 32b are set, and in the case of FIG. 9, the target materials 32a, 32b and 32c are set (target set). ). At the same time, the substrate holder 45 is removed from the rotating drum 31. Although not shown, the support shafts 46 a and 46 b of the substrate holder 45 are detachably supported by the flange portion of the rotary drum 31. Therefore, the support shafts 46 a and 46 b of the substrate holder 45 are removed from the bearing portion of the rotary drum 31. Then, the substrate plate 10 is attached to the substrate holder 45 taken out to the outside of the film forming chamber 30, the mask plate 33A is mounted on the surface of the substrate plate 10 as shown in FIG. 12, and the back surface of the substrate plate 10 is shown in FIG. Similarly, the mask plate 33B is mounted, and the substrate holder 45 is mounted on the rotating drum 31 again.

"Surface deposition process"
Next, the film forming chamber 30 is brought into a predetermined vacuum state. After the inside of the film forming chamber 30 is evacuated, an operating gas (argon gas or the like) is supplied to each film forming area and controlled to a predetermined film forming pressure. Before and after the operation gas supply, the drive motor M shown in FIG. At this time, when the drive gear 48 rotates, the reverse pinion 47 coupled to the drive gear 48 rotates, and the substrate holder 45 rotates positively by the drive motor M rotating forward about the support shafts 46a and 46b. As a result, the substrate plate 10 mounted on the substrate holder 45 is disposed so that the surface side 10A faces the target 32 as shown in FIG.
(Description of surface film formation by the film forming apparatus of FIG. 7)

  In the case of surface film formation by the film formation apparatus of FIG. 7, after the rotating drum 31 reaches a predetermined number of revolutions, an AC voltage is first applied to the sputter electrode 35b in the third film formation area 36b. Then, the working gas collides with the target 32b connected to this electrode, the target material 36b flies, and a film (in this case, Ti) of the target material 36c is formed on the surface of the substrate plate 10. In this state, when the rotating drum 31 is positioned in the fourth area 36d, the substrate is irradiated with an active gas (for example, O2). Then, the film is oxidized with an active gas (in this case, O 2) to generate a film of the dielectric film layer 21 a of oxide (for example, TiO 2). The rotating drum 31 is continuously rotated until the film of the dielectric film layer 21a reaches a predetermined thickness, thereby generating a film.

Next, an alternating voltage is applied to the sputter electrode 35a in the first film formation area 36a. Then, the working gas collides with the target 32a (Nb in this case) connected to the electrode, the target material flies, and the metal film layer 22a (Nb in this case) is formed on the dielectric film layer 21a on the surface of the substrate plate 10. ) Is formed. The rotating drum 31 is continuously rotated until the coating film of the metal film layer 22a reaches a predetermined thickness, thereby generating a coating film.

Similarly, the surface 10A of the substrate plate 10 shown in FIG. 3 is formed by repeating the laminated film formation in the order of the dielectric film layer 21b, the metal film layer 22b, the dielectric film layer 21c, the metal film layer 22c, and the dielectric film layer 21d. The light reducing film 20A is formed.
(Description of surface film formation by the film forming apparatus of FIG. 9)

  In the case of surface film formation by the film formation apparatus of FIG. 9, after the rotating drum 31 reaches a predetermined number of revolutions, an AC voltage is first applied to the sputter electrode 35c in the second film formation area 36c. Then, the working gas collides with the target 32c connected to the electrode, the target material 36c flies, and a film (in this case, Si) of the target material 36c is formed on the surface 10A of the substrate plate 10. In this state, when the rotating drum 31 is positioned in the fourth area 36d, the substrate is irradiated with an active gas (for example, O2). Then, the film is oxidized with an active gas (in this case, O 2) to generate a film of the dielectric film layer 21a of oxide (for example, SiO 2). The rotating drum 31 is continuously rotated until the film of the dielectric film layer 21a reaches a predetermined thickness, thereby generating a film.

Next, an alternating voltage is applied to the sputter electrode 35a in the first film formation area 36a. Then, the working gas collides with the target 32a (Nb in this case) connected to this electrode, the target material (metal ion) flies, and the metal film layer is formed on the dielectric film layer 21a on the surface 10A of the substrate plate 10. 22a (Nb in this case) is deposited. The rotating drum 31 is continuously rotated until the coating film of the metal film layer 22a reaches a predetermined thickness, thereby generating a coating film.

  Similarly, the surface 10A of the substrate plate 10 shown in FIG. 3 is formed by repeating the laminated film formation in the order of the dielectric film layer 21b, the metal film layer 22b, the dielectric film layer 21c, the metal film layer 22c, and the dielectric film layer 21d. The light reducing film 20A is formed.

"Backside film formation process"
Next, when the light reduction film 20A is formed on the surface 10A of the substrate plate 10, the drive motor M shown in FIG. At this time, when the drive gear 48 is reversed, the reverse pinion 47 coupled to the drive gear 48 is rotated, and the substrate holder 45 is rotated reversely by the reverse rotation drive of the drive motor M around the support shafts 46a and 46b. As a result, the substrate plate 10 mounted on the substrate holder 45 is disposed so that the back surface side 10B faces the target 32 as shown in FIG.
(Description of backside film formation by the film forming apparatus of FIG. 7)

  In the case of backside film formation by the film forming apparatus of FIG. 7, after the rotating drum 31 reaches a predetermined number of revolutions, an AC voltage is first applied to the sputter electrode 35a in the first film forming area 36a. Then, the working gas collides with the target 32a connected to this electrode, the target material 36a flies, and a film (in this case, Nb) of the target material 36a is formed on the back surface 10B of the substrate plate 10. In this state, when the rotating drum 31 is positioned in the fourth area 36d, the substrate is irradiated with an active gas (for example, O2). Then, the film is oxidized with an active gas (in this case, O 2) to generate a film of the dielectric film layer 23 a of an oxide (for example, Nb 2 O 5). The rotating drum 31 is continuously rotated until the coating film of the dielectric film layer 23a reaches a predetermined thickness to generate a coating film.

Next, an AC voltage is applied to the sputter electrode 35b in the third film formation area 36b. Then, the working gas collides with the target 32b (Ti in this case) connected to the electrode, the target material flies, and the metal film layer 24a (in this case) is formed on the dielectric film layer 23a on the back surface 10B of the substrate plate 10. Ti) is deposited. The rotating drum 31 is continuously rotated until the coating film of the metal film layer 24a reaches a predetermined thickness, thereby generating a coating film.

Similarly, the dimming film 20A is formed on the back surface 10B of the substrate plate 10 shown in FIG. 3 by repeating the laminated film formation in the order of the dielectric film layer 23b and the metal film layer 24b.
(Description of backside film formation by the film forming apparatus of FIG. 9)

In the case of backside film formation by the film forming apparatus of FIG. 9, after the rotating drum 31 reaches a predetermined number of rotations, an AC voltage is first applied to the sputtering electrode 35c in the third film forming area 36c. Then, the working gas collides with the target 32c connected to this electrode, the target material 36c flies, and a film (in this case, Si) of the target material 36c is formed on the back surface 10B of the substrate plate 10. In this state, when the rotary drum 31 is positioned in the fourth area 36d, the substrate is irradiated with an active gas (for example, O ₂ ). Then, the film is oxidized with an active gas (in this case, O ₂ ) to generate a film of the dielectric film layer 21a of an oxide (for example, SiO ₂ ). The rotating drum 31 is continuously rotated until the film of the dielectric film layer 21a reaches a predetermined thickness, thereby generating a film.

Next, an AC voltage is applied to the sputtering electrode 35b in the second film formation area 36b. Then, the working gas collides with the target 32b (Ti in this case) connected to the electrode, the target material flies, and the metal film layer 24a (in this case) is formed on the dielectric film layer 23a on the back surface 10B of the substrate plate 10. Ti) is deposited. The rotating drum 31 is continuously rotated until the coating film of the metal film layer 24a reaches a predetermined thickness, thereby generating a coating film.

  Similarly, the dimming film 20A is formed on the back surface 10B of the substrate plate 10 shown in FIG. 3 by repeating the laminated film formation in the order of the dielectric film layer 23b and the metal film layer 24b.

  In this way, by forming the light-reducing film layers 20A and 20B on the front and back surfaces of the substrate plate 10, respectively, the substrate plate 10 can be formed in the same film formation atmosphere (same batch) without opening the film formation chamber 30. A thin film can be formed on the front and back surfaces.

[Alternate forming of gradation thick film and uniform thickness film]
The space of the substrate holder 45 is wide, and the mask plates 33A and 33B are provided on the front and back surfaces of the substrate plate 10, respectively, so that the film thickness of the metal film layers 21a to 21c is linearly decreased gradually to change the density. It is also possible to form a thick film and form the dielectric film layers 22a to 22c in a uniform thickness film.

[Method of forming anti-reflection (AR layer) coating layer]
After the light-reducing films 20A and 20B are formed on the front and back surfaces of the substrate plate 10 through the above-described film forming process, as shown in FIG. AR layer) is formed as the outermost layer by dipping.

  When the substrate plate 10 is a cyclic olefin resin such as norbornene resin or cycloorphine resin and has a refractive index n1 as this high polymer, the polymer polymer is obtained from the square root (n2 = √n1) of the refractive index n1. In this case, since the substrate plate 10 is a norbornene-based resin having a refractive index n1 = 1.51, the refractive index n2≈1 as the high molecular polymer used as the dipping solution. .23 presilane is used. This presilane is a functional polymer soluble in an organic solvent whose main chain structure is composed of a one-dimensional silicon-silicon (Si-Si) bond, and a silicone polymer containing oxygen between silicon atoms. In contrast, it has unique optical functions such as photoconductivity, light emission, nonlinear optical characteristics, photodegradability, and high refractive index. On the other hand, since it is sensitive to light and unstable, it has a drawback of lacking long-term stability. Therefore, after the dipping process, the ultraviolet light is irradiated with an ultraviolet light Ur to remove the defect.

[ND filter shape cut]
17 and 18 show an embodiment of the substrate plate 10 formed by the film forming method described above. First, in the embodiment shown in FIG. 17, in accordance with the optical filter manufacturing process shown in FIG. 20, a light attenuating substrate plate is first formed into a resin material kneaded with a light attenuating material composed of a dye or pigment that attenuates transmitted light. Substrate plate molding step, then the filter attenuating step of punching the optical attenuating substrate plate into a plurality of optical filter shapes by pressing into a predetermined optical filter shape, leaving a part of the connecting portion, and then this shape A film-forming process for forming a anti-reflection coating layer on the surface of the extracted light-attenuating substrate plate. Finally, each optical filter member is separated from the punched light-attenuating substrate plate on which the anti-reflection coating layer is formed. The filter is sequentially extracted and extracted. In other words, an ND filter substrate having appropriate dimming characteristics is made from the substrate plate 10, and the outer shape of the ND filter substrate is die-cut in a state where a part of the ND filter substrate is left in the shape of the ND filter. By doing so, the above-described reduced reflection (AR layer) coating layer is formed including the side end face except for a part of the joined portion, and reflection on the side end face can be prevented even when incorporated in an imaging light quantity diaphragm device described later. Therefore, an image with good image quality performance can be obtained.

  Further, in the embodiment shown in FIG. 18, the substrate plate 10 is naturally cut into the ND filter shape by a film forming method in a general case where the substrate plate 10 is not cut in a state in which a part of the joining portion is left in the ND filter shape in advance. However, the cut side end face has no anti-reflection (AR layer) coating layer, and the reflection of the side end face when incorporated in the imaging light quantity diaphragm device cannot be prevented. It is often used because of its ease of film formation.

  Furthermore, FIG. 19 explains the light transmission characteristics in the visible light region of 400 nm to 700 nm of the optical filter according to the present invention. In the figure, the 33A graph shows the light transmission characteristics of the light reducing film 20A formed on the front surface 20A of the substrate plate 10, and the 33B graph shows the light transmission characteristics of the light reducing film 20B formed on the back surface 20B of the substrate plate 10. The 33C graph shows the light transmission characteristics of transmitting through the front and back of the substrate plate 10 and is almost uniform.

[Imaging light quantity aperture device]
As shown in FIG. 15, the light amount adjusting device E according to the present invention arranges one or a plurality of light amount adjusting blades 42 in an openable and closable manner in a substrate 40 and an optical path opening 41 formed in the substrate 40. The amount of light passing through the optical path opening 41 is adjusted by the light amount adjusting blade 42. The illustrated one is configured to adjust the amount of light with a pair of blades 42a and 42b, and each blade is formed with constricted portions 42x and 42y so as to adjust the amount of light in a small aperture state. One light quantity adjusting blade 42a has a filter 43f attached to a constricted portion 42x. The filter 43f is formed by cutting the single concentration region 20a and the gradation region 20b formed on the substrate plate 10 described above. The light amount adjustment blade 42a is attached so that the light transmittance increases toward the center of the optical path.

BRIEF DESCRIPTION OF THE DRAWINGS Explanatory drawing which shows the film-forming structure which is the 1st Example of the optical filter concerning this invention. Explanatory drawing which shows the film-forming structure which is the 2nd Example of the optical filter concerning this invention. Explanatory drawing which shows the film-forming whole structure of the optical filter concerning this invention. Explanatory drawing explaining the film-forming method of the optical filter concerning this invention. Explanatory drawing explaining the surface film-forming state of the optical filter concerning this invention. Explanatory drawing explaining the back surface film-forming state of the optical filter concerning this invention. Explanatory drawing explaining the structure of the film-forming apparatus of the optical filter concerning this invention. Explanatory drawing which shows the side surface sectional drawing of the film-forming apparatus of FIG. Explanatory drawing explaining the structure of the film-forming apparatus of the other optical filter concerning this invention. Explanatory drawing explaining the film-forming principle of the optical filter concerning this invention. Explanatory drawing explaining the surface film-forming method of the optical filter concerning this invention. Explanatory drawing explaining the state at the time of the surface film-forming of the optical filter concerning this invention. Explanatory drawing explaining the state of front-back inversion of the optical filter concerning this invention. Explanatory drawing explaining the state at the time of back surface film-forming of the optical filter concerning this invention. FIG. 3 is an explanatory perspective view illustrating a configuration of an imaging light amount adjustment device using an optical filter. Explanatory drawing explaining the anti-reflection (AR layer) coating method of the optical filter concerning this invention. Explanatory drawing explaining the film-forming state of the optical filter concerning this invention. Explanatory drawing explaining the film-forming state of the other optical filter concerning this invention. Explanatory drawing explaining the light transmission characteristic of the visible region of the optical filter concerning this invention. Explanatory drawing explaining the optical filter manufacturing process concerning this invention.

Explanation of symbols

E Light quantity adjusting device d Deposition gap 10 Substrate plate (deposition base material)
20 Thin film layer 20a Single concentration region 20b Gradation region 21 Light absorption layer (metal film layer) (22, 24)
22 Intermediate layer (dielectric film layer) (21, 23)
23 Coating layer 25 Rotating shaft 30 Deposition chamber 31 Substrate mounting body (rotating drum)
32 target 33 mask plate 33A first mask opening 33B second mask opening 35 sputter electrode (35a, 35b)
40 Substrate 41 Optical path opening 42 Light quantity adjustment blade (42a, 42b)
43 ND filter (optical filter)
47 Reverse pinion 48 Drive gear 49 Turntable

Claims (5)

A substrate plate molding step of forming a light attenuating substrate plate by molding a resin material kneaded with a light attenuating material composed of a dye or pigment that attenuates transmitted light; and
A filter outer shape die cutting step in which the light attenuating substrate plate is stamped into a plurality of optical filter shapes by pressing into a predetermined optical filter shape while leaving a part of the connection portion;
A light-reducing film layer forming step of forming a light-reducing film layer in which a dielectric film and a metal film are laminated on at least one surface of the light-attenuating substrate plate thus cut out;
An anti-reflection coating step of forming a polymer polymer anti-reflection coating layer on the surface and end face of the light-attenuating substrate plate on which the light-reducing film layer is formed;
An ultraviolet irradiation step of irradiating the anti-reflection coating layer with ultraviolet rays;
An extraction process as an optical filter for separating each optical filter member from the light attenuation substrate plate after the ultraviolet irradiation,
An optical filter forming method comprising: 2. The optical filter molding according to claim 1, wherein the anti-reflection coating layer is formed by dipping polysilane having a main chain structure soluble in an organic solvent and having a one-dimensional silicon-silicon (Si-Si) bond. Method. A light-attenuating substrate plate made of a resin kneaded with a light-attenuating material made of a dye or pigment that attenuates transmitted light;
A light-reducing film layer formed by laminating a dielectric film and a metal film on at least one surface of the light-attenuating substrate plate;
An optical filter formed by forming a polymer polymer anti-reflection coating layer on a surface and an end face of a light-attenuating substrate plate on which the light-reducing film layer is formed. 4. The optical filter according to claim 3, wherein the anti-reflection coating layer is formed by forming a polysilane having a main chain structure soluble in an organic solvent and having a one-dimensional silicon-silicon (Si-Si) bond. A diaphragm blade that is arranged in the imaging optical path and adjusts the imaging light amount;
An optical filter attached to the diaphragm blade;
Consisting of
5. The imaging light amount adjusting device according to claim 3, wherein the optical filter is formed by the optical filter forming method according to claim 3.