JP2009283211A - Socket, and inspection device using the same, and method of manufacturing semiconductor device - Google Patents

Socket, and inspection device using the same, and method of manufacturing semiconductor device Download PDF

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JP2009283211A
JP2009283211A JP2008132519A JP2008132519A JP2009283211A JP 2009283211 A JP2009283211 A JP 2009283211A JP 2008132519 A JP2008132519 A JP 2008132519A JP 2008132519 A JP2008132519 A JP 2008132519A JP 2009283211 A JP2009283211 A JP 2009283211A
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terminal
inspection
semiconductor device
socket
heat radiating
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Kazuhiko Yamada
和彦 山田
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Lapis Semiconductor Co Ltd
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Oki Semiconductor Co Ltd
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Priority to JP2008132519A priority Critical patent/JP2009283211A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

<P>PROBLEM TO BE SOLVED: To provide a means for cooling a terminal formation surface which is a rear surface of a semiconductor device as an object to be inspected during inspection. <P>SOLUTION: In a socket having a plurality of relay terminals electrically connected to an electrode terminal of an object to be inspected, a radiation terminal is provided to a mounting portion for the object in a substrate of the socket. The radiation terminal includes a contact surface to be in contact with the terminal formation surface where an electrode terminal of the object is formed, and a protrusion portion protruding from the back surface of the substrate on the side opposite to the mounting portion. The socket is mounted such that the terminal formation surface of the object is in contact with the contact surface of the radiation terminal. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、半導体装置の検査時に検査対象の半導体装置を装着するソケットおよびそれを用いた検査装置並びに半導体装置の製造方法に関する。   The present invention relates to a socket for mounting a semiconductor device to be inspected at the time of inspection of the semiconductor device, an inspection device using the socket, and a method for manufacturing the semiconductor device.

従来の半導体装置の検査に用いるソケットは、基板の収容部にコンタクトピンを設け、このコンタクトピンを介して検査対象の半導体装置の電極端子と、検査ボードの電極部とを電気的に接続し、収容部に装着した半導体装置の電極端子と反対側の面にヒートシンクを当接させて、検査時における半導体装置の発熱による熱を放熱している（例えば、特許文献１参照。）。
特開２００３−５９６０２号公報（段落００１０−００１３、段落００３２−００３４、第１図） A socket used for the inspection of a conventional semiconductor device is provided with a contact pin in the housing portion of the substrate, and electrically connects the electrode terminal of the semiconductor device to be inspected and the electrode portion of the inspection board via the contact pin, A heat sink is brought into contact with the surface opposite to the electrode terminal of the semiconductor device mounted in the housing portion to dissipate heat due to heat generated by the semiconductor device during inspection (see, for example, Patent Document 1).
JP 2003-59602 A (paragraphs 0010-0013, paragraphs 0032-0034, FIG. 1)

しかしながら、上述した従来の技術においては、ソケットに装着した半導体装置の電極端子が形成された端子形成面と反対側のおもて面にヒートシンクを当接させて、検査時における半導体装置を冷却しているため、半導体装置の裏面である端子形成面側から発熱源である回路素子からの熱を放熱して冷却することが必要な場合に、検査時における半導体装置の冷却効率が低下する虞があるという問題がある。   However, in the conventional technique described above, the heat sink is brought into contact with the front surface opposite to the terminal forming surface on which the electrode terminals of the semiconductor device mounted on the socket are formed, thereby cooling the semiconductor device at the time of inspection. Therefore, there is a risk that the cooling efficiency of the semiconductor device at the time of inspection may be reduced when it is necessary to radiate and cool the heat from the circuit element that is the heat source from the terminal forming surface side that is the back surface of the semiconductor device. There is a problem that there is.

この検査時における半導体装置の冷却が不十分になると、半導体装置の本来の電気特性等が検査できないだけでなく、半導体装置の発熱による破損やソケットの破損を招くことになる。
また、高電圧を用いるパワーＩＣ等の動作時の発熱が大きい半導体装置においては、半導体チップに形成されたパワートランジスタ等の回路素子からの熱を、半導体装置の裏面である端子形成面に設けられたバックメタルに導き、半導体装置の裏面側から放熱することが行われており、このようなバックメタルを有する半導体装置の検査においては、そのバックメタルを有効に活用することができないという問題がある。 If the semiconductor device is not sufficiently cooled during the inspection, the original electrical characteristics and the like of the semiconductor device cannot be inspected, and the semiconductor device may be damaged due to heat generation or the socket.
In a semiconductor device that generates a large amount of heat during operation, such as a power IC that uses a high voltage, heat from a circuit element such as a power transistor formed on a semiconductor chip is provided on a terminal formation surface that is the back surface of the semiconductor device. In other words, in the inspection of a semiconductor device having such a back metal, the back metal cannot be effectively used. .

本発明は、上記の問題点を解決するためになされたもので、検査時に、検査対象物としての半導体装置の裏面である端子形成面を冷却する手段を提供することを目的とする。   The present invention has been made to solve the above-described problems, and an object of the present invention is to provide means for cooling a terminal forming surface which is a back surface of a semiconductor device as an inspection object during inspection.

本発明は、上記課題を解決するために、検査対象物の電極端子に電気的に接続する複数の中継端子を有するソケットにおいて、前記ソケットの基板の、前記検査対象物を装着する装着部に放熱端子を設け、前記放熱端子は、前記検査対象物の前記電極端子を形成する端子形成面に当接する当接面と、前記装着部と反対側の裏面から突出する突出部とを有し、前記検査対象物の端子形成面を、前記放熱端子の前記当接面に当接させて装着することを特徴とする。   In order to solve the above-described problems, the present invention provides a socket having a plurality of relay terminals that are electrically connected to electrode terminals of an inspection object, and radiates heat to a mounting portion of the socket substrate on which the inspection object is mounted. A terminal is provided, and the heat radiating terminal has a contact surface that contacts a terminal forming surface that forms the electrode terminal of the inspection object, and a protruding portion that protrudes from the back surface opposite to the mounting portion, The terminal forming surface of the inspection object is mounted in contact with the contact surface of the heat radiating terminal.

これにより、本発明は、検査時における検査対象物の熱を、検査対象物の裏面である端子形成面側から直接放熱端子に流入させて外部に放熱させることができ、検査対象物の冷却効率を向上させることができるという効果が得られる。   As a result, the present invention allows the heat of the inspection object at the time of inspection to flow directly from the terminal forming surface side, which is the back surface of the inspection object, to the heat radiating terminal to be radiated to the outside, and the cooling efficiency of the inspection object The effect that can be improved is obtained.

以下に、図面を参照して本発明によるソケットおよび検査装置の実施例について説明する。   Embodiments of a socket and an inspection apparatus according to the present invention will be described below with reference to the drawings.

図１は端子形成面側から見た実施例の半導体装置を示す説明図、図２は実施例のソケットの上面を示す説明図、図３は実施例のソケットの断面を示す説明図、図４は実施例のソケットの下面を示す説明図、図５は実施例の検査装置の断面を示す説明図である。
なお、図３は図２のＡ−Ａ断面線に沿った基板の断面図である。
図１において、１は検査対象物としての半導体装置である。本実施例の半導体装置１は、比較的高電圧を用いるパワーＩＣ等の動作時の発熱が大きい半導体チップを内部に有するＱＦＮ（Ｑｕａｄ Ｆｌａｔ Ｎｏｎ−ｌｅａｄｅｄ ｐａｃｋａｇｅ）型の半導体装置である。半導体装置１の内部の半導体チップのおもて面側には図示しないパワートランジスタ等の回路素子が形成され、半導体装置１の裏面である端子形成面３の縁部には、回路素子の所定の部位と電気的に接続して、回路素子と外部との信号の送受や、回路素子への電源の供給等に用いられる電極端子４が複数形成されている。 1 is an explanatory view showing the semiconductor device of the embodiment as viewed from the terminal forming surface side, FIG. 2 is an explanatory view showing the top surface of the socket of the embodiment, FIG. 3 is an explanatory view showing a cross section of the socket of the embodiment, and FIG. FIG. 5 is an explanatory view showing the lower surface of the socket of the embodiment, and FIG.
FIG. 3 is a cross-sectional view of the substrate along the line AA in FIG.
In FIG. 1, reference numeral 1 denotes a semiconductor device as an inspection object. The semiconductor device 1 of the present embodiment is a QFN (Quad Flat Non-leaded package) type semiconductor device having a semiconductor chip that generates a large amount of heat during operation of a power IC or the like that uses a relatively high voltage. A circuit element such as a power transistor (not shown) is formed on the front surface side of the semiconductor chip inside the semiconductor device 1, and a predetermined portion of the circuit element is formed on the edge of the terminal forming surface 3, which is the back surface of the semiconductor device 1. A plurality of electrode terminals 4 are formed which are electrically connected to the part and used for transmission and reception of signals between the circuit elements and the outside, supply of power to the circuit elements, and the like.

また、端子形成面３の電極端子４に囲まれた中央領域には、内部の半導体チップのおもて面側の回路素子で発熱した熱を裏面に導いて図示しない実装基板へ放出するためのバックメタル６が設けられている。
８は基準マークであり、バックメタル６の一隅に形成され、電極端子４の装着位置を決めるときの基準として用いられる。 Further, in the central region surrounded by the electrode terminals 4 on the terminal forming surface 3, the heat generated by the circuit elements on the front surface side of the internal semiconductor chip is guided to the back surface and released to a mounting substrate (not shown). A back metal 6 is provided.
Reference numeral 8 denotes a reference mark which is formed at one corner of the back metal 6 and is used as a reference when determining the mounting position of the electrode terminal 4.

図２において、１０はソケットである。
１１はソケット１０の基板であり、半導体装置１が装着される装着面１１ａの中央部に、装着する半導体装置１と同形状の開口を有する凹部として形成された装着部１２が設けられており、その装着部１２の底面には、半導体装置１の電極端子４と接触により電気的に接続する複数の中継端子１３が設けられ、装着部１２の４隅には、半導体装置１の電極端子４を中継端子１３上に載置するときに、その４隅の位置決めを行う位置決めガイド１４が設けられている。 In FIG. 2, 10 is a socket.
Reference numeral 11 denotes a substrate of the socket 10, and a mounting portion 12 formed as a recess having an opening having the same shape as the semiconductor device 1 to be mounted is provided at the center of the mounting surface 11 a on which the semiconductor device 1 is mounted. A plurality of relay terminals 13 that are electrically connected to the electrode terminals 4 of the semiconductor device 1 by contact are provided on the bottom surface of the mounting portion 12, and the electrode terminals 4 of the semiconductor device 1 are provided at four corners of the mounting portion 12. Positioning guides 14 for positioning the four corners when placed on the relay terminal 13 are provided.

１５はソケット１０の蓋体であり、基板１１の装着面１１ａの一方の側縁部に回動可能に設けられ、装着部１２の半導体装置１を押圧する突起部である押圧部１６とフック部１７とが設けられており、半導体装置１を基板１１の方向に押圧する押圧部材として機能する。
中継端子１３は、図３に示すように、半導体装置１の電極端子４を当接させるパッド部１３ａと、基板１１を貫通して、装着面１１ａの反対側の裏面１１ｂから延在するピン部１３ｂとで形成されている。 Reference numeral 15 denotes a lid of the socket 10, which is rotatably provided on one side edge portion of the mounting surface 11 a of the substrate 11, and a pressing portion 16 and a hook portion that are protrusions that press the semiconductor device 1 of the mounting portion 12. 17 and functions as a pressing member that presses the semiconductor device 1 toward the substrate 11.
As shown in FIG. 3, the relay terminal 13 includes a pad portion 13 a that contacts the electrode terminal 4 of the semiconductor device 1 and a pin portion that penetrates the substrate 11 and extends from the back surface 11 b on the opposite side of the mounting surface 11 a. 13b.

図３、図４において、１９は放熱端子であり、銅（Ｃｕ）やアルミニウム（Ａｌ）等の優れた熱伝導性（良導性という。）を有する材料で形成された円柱部材に、金（Ａｕ）等の良導性の材料をメッキして形成され、図３に示すように、基板１１を貫通して形成されており、基板１１の装着部１２の底面に露出した端面である当接面１９ａと、裏面１１ｂから突出した突出部１９ｂとを有している。   3 and 4, reference numeral 19 denotes a heat radiating terminal, which is formed on a cylindrical member formed of a material having excellent thermal conductivity (referred to as good conductivity) such as copper (Cu) or aluminum (Al). 3 is formed by plating a material having good conductivity such as Au), and is formed so as to penetrate through the substrate 11 as shown in FIG. 3, and is an end face exposed on the bottom surface of the mounting portion 12 of the substrate 11. It has the surface 19a and the protrusion part 19b which protruded from the back surface 11b.

なお、本実施例の中継端子１３のパッド部１３ａの上面と放熱端子１９の当接面１９ａとは同一平面上に形成されている。
図５において、２１は半導体装置１の検査装置であり、検査ボード２２に上記したソケット１０を搭載して形成される。
検査ボード２２は、半導体装置１の電気的な特性を検査するための図示しない検査回路が形成され、その裏面２２ｂには、検査回路の所定の部位と電気的に接続する配線パターン２３が形成されており、この配線パターン２３には、検査ボード２２のおもて面２２ａに、中継端子１３のピン部１３ｂを嵌合させる受口を開口させた接続端子２４が接続されている。 The upper surface of the pad portion 13a of the relay terminal 13 and the contact surface 19a of the heat radiating terminal 19 are formed on the same plane.
In FIG. 5, reference numeral 21 denotes an inspection device for the semiconductor device 1, which is formed by mounting the socket 10 on the inspection board 22.
The inspection board 22 is formed with an inspection circuit (not shown) for inspecting the electrical characteristics of the semiconductor device 1, and a wiring pattern 23 electrically connected to a predetermined part of the inspection circuit is formed on the back surface 22 b. In addition, a connection terminal 24 having an opening for fitting the pin portion 13b of the relay terminal 13 is connected to the front surface 22a of the inspection board 22 to the wiring pattern 23.

また、検査ボード２２の裏面２２ｂには、銅等の良導性の材料で比較的広い面積で、平面状に形成された放熱部２６が形成されており、その放熱部２６に設けられた挿入穴２７に、ソケット１０の放熱端子１９の突出部１９ｂを挿入した後に、半田等の接合剤で接続される。
このように構成された検査装置２１のソケット１０の装着部１２には、図５に示すように、基板１１に設けられた位置決めガイド１４に４隅を案内された半導体装置１が、基板１１の装着面１１ａにその端子形成面３を対向させて載置される。 In addition, a heat radiating portion 26 formed in a planar shape with a relatively wide area is formed on the back surface 22b of the inspection board 22 with a relatively conductive material such as copper, and an insertion provided in the heat radiating portion 26 is provided. After inserting the protrusion 19b of the heat radiating terminal 19 of the socket 10 into the hole 27, it is connected with a bonding agent such as solder.
As shown in FIG. 5, the mounting portion 12 of the socket 10 of the inspection apparatus 21 configured as described above has the semiconductor device 1 guided at the four corners by the positioning guides 14 provided on the substrate 11. The terminal forming surface 3 is placed opposite to the mounting surface 11a.

このとき、半導体装置１の電極端子４がソケット１０の中継端子１３のパッド部１３ａに当接すると共に、端子形成面３の中央部に形成されたバックプレート６が、放熱端子１９の当接面１９ａに当接し、その後に、閉作動させた蓋体１５により押圧されて装着される（半導体装置１の装着工程）。
これにより、検査ボード２２の検査回路に接続する配線パターン２３が、接続端子２４、中継端子１３を経由して、半導体装置１の回路素子に接続する電極端子４に電気的に接続されると共に、半導体装置１のバックプレート６が、放熱端子１９を介して放熱部２６に熱的に接続される。 At this time, the electrode terminal 4 of the semiconductor device 1 abuts on the pad portion 13 a of the relay terminal 13 of the socket 10, and the back plate 6 formed at the center portion of the terminal forming surface 3 is in contact with the abutting surface 19 a of the heat radiating terminal 19. Is then pressed and mounted by the lid 15 that has been closed (mounting process of the semiconductor device 1).
Thereby, the wiring pattern 23 connected to the inspection circuit of the inspection board 22 is electrically connected to the electrode terminal 4 connected to the circuit element of the semiconductor device 1 via the connection terminal 24 and the relay terminal 13, and The back plate 6 of the semiconductor device 1 is thermally connected to the heat radiating portion 26 via the heat radiating terminal 19.

そして、検査装置２１の検査ボード２２の検査回路から電源電圧等を供給して半導体装置１を動作させながら、半導体装置１の各種の電気的な特性や機能等が検査される（半導体装置１の検査工程）
この半導体装置１の動作のときに、半導体装置１の回路素子が発熱し、その熱はバックプレート６に導かれ、バックプレート６に導かれた熱は、放熱端子１９の当接面１９ａから放熱端子１９へ流入し、放熱端子１９に流入した熱は、検査ボード２２の放熱部２６から外部に放熱される。 Then, various electrical characteristics and functions of the semiconductor device 1 are inspected while operating the semiconductor device 1 by supplying a power supply voltage or the like from the inspection circuit of the inspection board 22 of the inspection device 21 (of the semiconductor device 1). Inspection process)
During the operation of the semiconductor device 1, circuit elements of the semiconductor device 1 generate heat, the heat is guided to the back plate 6, and the heat guided to the back plate 6 is radiated from the contact surface 19 a of the heat radiating terminal 19. The heat flowing into the terminal 19 and flowing into the heat radiation terminal 19 is radiated to the outside from the heat radiation portion 26 of the inspection board 22.

このように、本実施例の検査装置２１においては、そのソケット１０に、半導体装置１の裏面に設けられたバックプレート６に当接する放熱端子１９を設けてあるので、検査時における半導体装置１の熱を、裏面である端子形成面３側のバックプレート６から直接放熱端子１９に流入させて外部に放熱させることができ、バックプレート６を有効に活用して、半導体装置１の冷却効率を向上させることができ、半導体装置１の電気特性を損なうことなく、その特性を検査することができると共に、半導体装置１の発熱による破損やソケット１０の破損を防止することができる。   As described above, in the inspection apparatus 21 of this embodiment, the socket 10 is provided with the heat radiating terminal 19 that comes into contact with the back plate 6 provided on the back surface of the semiconductor device 1. Heat can flow directly from the back plate 6 on the terminal forming surface 3 side, which is the back surface, to the heat radiating terminals 19 to be radiated to the outside, and the cooling efficiency of the semiconductor device 1 is improved by effectively utilizing the back plate 6. It is possible to inspect the characteristics of the semiconductor device 1 without damaging the electrical characteristics of the semiconductor device 1 and to prevent damage to the socket 10 due to heat generation of the semiconductor device 1.

このことは、パワーＩＣ等の動作時の発熱が大きいいために放熱用のバックプレート６が設けられた半導体装置１の検査における半導体装置１の冷却に、特に有効である。
なお、本実施例では、放熱端子１９の当接面１９ａを、端子形成面３にバックプレート６が形成された半導体装置１のバックプレート６に当接させるとして説明したが、端子形成面３側、つまり内部の半導体チップに形成された回路素子が半導体装置１の裏面側に形成されたＣＳＰ（Ｃｈｉｐ Ｓｉｚｅ Ｐａｃｋａｇｅ）型やＢＧＡ（Ｂａｌｌ Ｇｒｉｄ Ａｒｒａｙ）型等の裏面にバックプレート６が形成されていない半導体装置１の端子形成面３に当接させて、本発明を適用するようにしてもよい。 This is particularly effective for cooling the semiconductor device 1 in the inspection of the semiconductor device 1 provided with the heat-dissipating back plate 6 because the heat generated during the operation of the power IC or the like is large.
In the present embodiment, the contact surface 19a of the heat radiating terminal 19 has been described as contacting the back plate 6 of the semiconductor device 1 in which the back plate 6 is formed on the terminal forming surface 3. That is, the back plate 6 is not formed on the back surface of a CSP (Chip Size Package) type or BGA (Ball Grid Array) type in which circuit elements formed in the internal semiconductor chip are formed on the back surface side of the semiconductor device 1. The present invention may be applied by contacting the terminal forming surface 3 of the semiconductor device 1.

この場合に、ＢＧＡ型の半導体装置１を搭載するソケット１０においては、電極端子としてのボール端子の高さに応じて、放熱端子１９の当接面１９ａを中継端子１３のパッド部１３ａの上面から突出させるようにするとよい。
このようにしても、検査時における半導体装置１の熱を、発熱源である回路素子から近い端子形成面３側から直接放熱端子１９に流入させて外部に放熱させることが可能になり、半導体装置１の冷却効率を向上させることができ、半導体装置１の電気特性を損なうことなく、その特性を検査することができると共に、半導体装置１の発熱による破損やソケット１０の破損を防止することができる。 In this case, in the socket 10 on which the BGA type semiconductor device 1 is mounted, the contact surface 19a of the heat radiating terminal 19 is formed from the upper surface of the pad portion 13a of the relay terminal 13 according to the height of the ball terminal as the electrode terminal. It is good to make it protrude.
Even in this case, heat of the semiconductor device 1 at the time of inspection can be directly flowed into the heat radiating terminal 19 from the terminal forming surface 3 side close to the circuit element that is a heat source, and can be radiated to the outside. 1 can be improved, the characteristics of the semiconductor device 1 can be inspected without damaging the electrical characteristics of the semiconductor device 1, and damage to the socket 10 due to heat generation of the semiconductor device 1 can be prevented. .

また、本実施例では、放熱端子１９を円柱状部材として例示したが、図６に示すように、突出部の先端側を先端に向かって拡大する円錐状に形成してもよく、図７に示す波型や図８に示す螺旋型等にしてもよい。
更に、本実施例では、検査ボード２２上に搭載したソケット１０の放熱端子１９の突出部１９ｂを、検査ボード２２の裏面２２ｂに形成した放熱部２６に接続して検査装置２１を形成するとして説明したが、図９に示すように、検査ボード２２のおもて面２２ａに放熱部２６を形成しておき、その放熱部２６に放熱端子１９（図９の例では、図６に示した放熱端子１９）の突出部１９ｂの先端を接合剤を用いて接続するようにしてもよく、突出部１９ｂの先端を放熱部２６に当接させるようにしてもよい。要は放熱部２６と放熱端子１９とを熱的に接続するようにすればよい。 In the present embodiment, the heat radiating terminal 19 is exemplified as a cylindrical member. However, as shown in FIG. 6, the distal end side of the protruding portion may be formed in a conical shape that expands toward the distal end. The wave shape shown in FIG. 8 or the spiral shape shown in FIG.
Furthermore, in the present embodiment, it is assumed that the inspection device 21 is formed by connecting the protruding portion 19b of the heat radiating terminal 19 of the socket 10 mounted on the inspection board 22 to the heat radiating portion 26 formed on the back surface 22b of the inspection board 22. However, as shown in FIG. 9, a heat radiating portion 26 is formed on the front surface 22a of the inspection board 22, and the heat radiating terminal 19 is connected to the heat radiating portion 26 (in the example of FIG. 9, the heat radiating shown in FIG. The tip of the protruding portion 19b of the terminal 19) may be connected using a bonding agent, or the tip of the protruding portion 19b may be brought into contact with the heat radiating portion 26. In short, the heat radiating portion 26 and the heat radiating terminal 19 may be thermally connected.

更に、本実施例では、検査ボード２２に、配線パターン２３とは別に放熱部２６を設けるとして説明したが、配線パターン２３に比較的広い面積の接地配線が存在する場合には、その接地配線を放熱部２６として用いるようにしてもよい。
以上説明したように、本実施例では、ソケットの基板に、基板の、半導体装置を装着する装着部に当接面を有し、裏面から突出する突出部を有する放熱端子を設け、半導体装置の端子形成面を放熱端子の当接面に当接させて装着するようにしたことによって、検査時における半導体装置の熱を、裏面である端子形成面側から直接放熱端子に流入させて外部に放熱させることができ、半導体装置の冷却効率を向上させることができる。 Furthermore, in this embodiment, the inspection board 22 has been described as being provided with the heat radiation portion 26 in addition to the wiring pattern 23. However, when the wiring pattern 23 has a relatively large area of ground wiring, the ground wiring is used. You may make it use as the thermal radiation part 26. FIG.
As described above, in this embodiment, the socket substrate is provided with a heat radiation terminal having a contact surface on the mounting portion of the substrate on which the semiconductor device is mounted and a protruding portion protruding from the back surface. By mounting the terminal forming surface in contact with the contact surface of the radiating terminal, heat from the semiconductor device at the time of inspection flows directly from the terminal forming surface side, which is the back surface, to the radiating terminal to dissipate heat to the outside. The cooling efficiency of the semiconductor device can be improved.

端子形成面側から見た実施例の半導体装置を示す説明図Explanatory drawing which shows the semiconductor device of the Example seen from the terminal formation surface side 実施例のソケットの上面を示す説明図Explanatory drawing which shows the upper surface of the socket of an Example 実施例のソケットの断面を示す説明図Explanatory drawing which shows the cross section of the socket of an Example 実施例のソケットの下面を示す説明図Explanatory drawing which shows the lower surface of the socket of an Example 実施例の検査装置の断面を示す説明図Explanatory drawing which shows the cross section of the inspection apparatus of an Example 実施例の放熱端子の他の形態の側面を示す説明図Explanatory drawing which shows the side surface of the other form of the thermal radiation terminal of an Example 実施例の放熱端子の他の形態の側面を示す説明図Explanatory drawing which shows the side surface of the other form of the thermal radiation terminal of an Example 実施例の放熱端子の他の形態の側面を示す説明図Explanatory drawing which shows the side surface of the other form of the thermal radiation terminal of an Example 実施例の検査装置の他の形態の側面を示す説明図Explanatory drawing which shows the side surface of the other form of the inspection apparatus of an Example.

符号の説明Explanation of symbols

１ 半導体装置
３ 端子形成面
４ 電極端子
６ バックメタル
８ 基準マーク
１０ ソケット
１１ 基板
１１ａ 装着面
１１ｂ、２２ｂ 裏面
１２ 装着部
１３ 中継端子
１３ａ パッド部
１３ｂ ピン部
１４ 位置決めガイド
１５ 蓋体
１６ 押圧部
１７ フック部
１９ 放熱端子
１９ａ 当接面
１９ｂ 突出部
２１ 検査装置
２２ 検査ボード
２２ａ おもて面
２３ 配線パターン
２４ 接続端子
２６ 放熱部
２７ 挿入穴 DESCRIPTION OF SYMBOLS 1 Semiconductor device 3 Terminal formation surface 4 Electrode terminal 6 Back metal 8 Reference mark 10 Socket 11 Board | substrate 11a Mounting surface 11b, 22b Back surface 12 Mounting part 13 Relay terminal 13a Pad part 13b Pin part 14 Positioning guide 15 Cover body 16 Pressing part 17 Hook Part 19 Heat radiation terminal 19a Contact surface 19b Protruding part 21 Inspection device 22 Inspection board 22a Front surface 23 Wiring pattern 24 Connection terminal 26 Heat radiation part 27 Insertion hole

Claims (5)

検査対象物の電極端子に電気的に接続する複数の中継端子を有するソケットにおいて、
前記ソケットの基板の、前記検査対象物を装着する装着部に放熱端子を設け、
前記放熱端子は、前記検査対象物の前記電極端子を形成する端子形成面に当接する当接面と、前記装着部と反対側の裏面から突出する突出部とを有し、
前記検査対象物の端子形成面を、前記放熱端子の前記当接面に当接させて装着することを特徴とするソケット。 In a socket having a plurality of relay terminals electrically connected to the electrode terminal of the inspection object,
A heat dissipating terminal is provided in a mounting portion for mounting the inspection object on the socket substrate,
The heat radiating terminal has a contact surface that contacts a terminal forming surface that forms the electrode terminal of the inspection object, and a protruding portion that protrudes from the back surface opposite to the mounting portion.
A socket in which the terminal forming surface of the inspection object is mounted in contact with the contact surface of the heat radiating terminal. 請求項１において、
前記検査対象物が、前記端子形成面にバックプレートを有する場合に、
前記検査対象物のバックプレートを、前記放熱端子の前記当接面に当接させて装着することを特徴とするソケット。 In claim 1,
When the inspection object has a back plate on the terminal forming surface,
A socket, wherein the back plate of the inspection object is mounted in contact with the contact surface of the heat radiating terminal. 請求項１または請求項２に記載のソケットと、
前記検査対象物の検査回路と、前記中継端子に電気的に接続する接続端子と、前記検査回路と前記接続端子との間を接続する配線パターンとが形成された検査ボードと、を備え、
前記検査ボードに放熱部を設け、
前記放熱部に、前記放熱端子の突出部を接続したことを特徴とする検査装置。 The socket according to claim 1 or 2, and
An inspection board on which an inspection circuit for the inspection object, a connection terminal electrically connected to the relay terminal, and a wiring pattern connecting between the inspection circuit and the connection terminal are formed,
Provide a heat dissipation part on the inspection board,
An inspection apparatus, wherein a protrusion of the heat radiating terminal is connected to the heat radiating part. 請求項３において、
前記放熱部を、前記配線パターンの接地配線としたことを特徴とする検査装置。 In claim 3,
The inspection apparatus, wherein the heat radiating portion is a ground wiring of the wiring pattern. 請求項３または請求項４に記載の検査装置のソケットの装着部に、前記検査対象物として半導体装置を装着する工程と、
前記検査装置を用いて、前記半導体装置を検査する工程と、を備えることを特徴とする半導体装置の製造方法。 A step of mounting a semiconductor device as the inspection object on the socket mounting portion of the inspection device according to claim 3 or 4,
And a step of inspecting the semiconductor device using the inspection device.
JP2008132519A 2008-05-20 2008-05-20 Socket, and inspection device using the same, and method of manufacturing semiconductor device Pending JP2009283211A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
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Publications (1)

Publication Number Publication Date
JP2009283211A true JP2009283211A (en) 2009-12-03

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Family Applications (1)

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Country Link
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011187605A (en) * 2010-03-08 2011-09-22 Nec Corp Mounting structure

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0778917A (en) * 1993-09-07 1995-03-20 Mitsubishi Electric Corp J-led package, socket system and board system
JPH09223556A (en) * 1996-02-16 1997-08-26 Yamaichi Electron Co Ltd Grounding mechanism of ic package in socket
JPH11251021A (en) * 1998-03-02 1999-09-17 Sony Corp Socket for measuring ic
JP2008111722A (en) * 2006-10-30 2008-05-15 Three M Innovative Properties Co Ic socket having heat dissipation function

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0778917A (en) * 1993-09-07 1995-03-20 Mitsubishi Electric Corp J-led package, socket system and board system
JPH09223556A (en) * 1996-02-16 1997-08-26 Yamaichi Electron Co Ltd Grounding mechanism of ic package in socket
JPH11251021A (en) * 1998-03-02 1999-09-17 Sony Corp Socket for measuring ic
JP2008111722A (en) * 2006-10-30 2008-05-15 Three M Innovative Properties Co Ic socket having heat dissipation function

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011187605A (en) * 2010-03-08 2011-09-22 Nec Corp Mounting structure

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