JP2009280495A - 高い熱伝導率を有する炭化珪素 - Google Patents
高い熱伝導率を有する炭化珪素 Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 139
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 126
- 239000007789 gas Substances 0.000 claims abstract description 43
- 239000005055 methyl trichlorosilane Substances 0.000 claims abstract description 31
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000000376 reactant Substances 0.000 claims abstract description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 10
- 239000000126 substance Substances 0.000 claims abstract description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000000151 deposition Methods 0.000 claims description 63
- 230000008021 deposition Effects 0.000 claims description 61
- 238000005229 chemical vapour deposition Methods 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 28
- 239000013078 crystal Substances 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 7
- 238000005137 deposition process Methods 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 description 24
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 12
- 239000002245 particle Substances 0.000 description 11
- 239000012159 carrier gas Substances 0.000 description 8
- 230000007547 defect Effects 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 6
- 239000003153 chemical reaction reagent Substances 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 6
- 239000010439 graphite Substances 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000005484 gravity Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- -1 vacancies Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
【解決手段】高熱伝導率を有し、積層欠陥が減少した、化学蒸着β相多結晶炭化珪素。炭化珪素は水素ガスおよびメチルトリクロロシランを反応物質として用いる特定の条件下で合成される。炭化珪素の熱伝導率は、高い熱負荷が発生する電子デバイスの装置の一部および部品として用いることができるほど十分高い。このような部品としては、アクティブ熱電クーラー、ヒートシンクおよびファンが挙げられる。
【選択図】なし
Description
K=Cvl/3
式中、Kは熱伝導率であり、Cは容積熱容量であり、vはキャリア速度であり、lは熱を運ぶフォノンの衝突に依存する平均自由行路である。平均自由行路はまた、電子、合金元素、不純物、空孔、結晶欠陥、弾性および光学的不連続性などによっても影響を受ける。平均自由行路に影響を及ぼす結晶欠陥はまた前記のような積層欠陥も包含する。したがって、SiCの積層欠陥を制御することにより、熱伝導率も制御することができる。
12 三角形セル
14、16、18 壁
20 化学蒸着三角形セルカバープレート
22 真空ファーネス
24 外壁
26 カバープレート
28 ベースプレート
30 発熱体
32 反応ガス
34 インレットチューブ
36 頂部
38 インジェクター
40 中心
42 堆積ゾーン
44 排気口
46 中心
48 端部
50 堆積物質
52 堆積管
54 底部
56 サポート
62 化学蒸着システム
64 バブラーチャンバー
66 バルブ
68 フローライン
70 フローライン
72 バルブ
74 フローライン
76 バルブ
78 インジェクター
80 フィルター
82 フローライン
84 真空ポンプ
88 スクラバー
Claims (20)
- 少なくとも375W/mKの熱伝導率及び0.10より小さい結晶秩序比を有する化学蒸着されたフリースタンディングβ相多結晶炭化珪素。
- 熱伝導率が375W/mK〜390W/mKの範囲である請求項1記載の炭化珪素。
- 熱伝導率が389W/mKである請求項2記載の炭化珪素。
- 結晶秩序比が0.10より小さい、化学蒸着されたフリースタンディングβ相多結晶炭化珪素。
- 結晶秩序比が0.05から0.01である請求項4記載の炭化珪素。
- a)堆積チャンバー内の反応物質の流れが少なくとも1つのマンドレルの表面と平行になるように、該少なくとも1つのマンドレルが堆積チャンバー内に配置されるように、化学蒸着チャンバー内に、該少なくとも1つのマンドレルを配置し;
b)反応物質が堆積チャンバー内で炭化珪素を形成するように、反応物質を気体として堆積チャンバー内に生じさせ;
c)堆積チャンバーの温度を1350℃より高く1450℃までに維持し;さらに
d)炭化珪素を、該少なくとも1つのマンドレルの表面上に0.1μm/分〜3.0μm/分の速度で堆積させて、少なくとも375W/mKの熱伝導率及び0.10より小さい結晶秩序比を有する炭化珪素を形成させることを含む、高い熱伝導率および低い積層欠陥を有するβ相多結晶炭化珪素の製造方法。 - 炭化珪素を少なくとも1つのマンドレルの表面上に1.5μm/分の速度で堆積させる請求項6記載の方法。
- 反応物質が、水素ガスおよびメチルトリクロロシランを含む請求項6記載の方法。
- 水素ガスの流量が55slpm〜75slpmであり、メチルトリクロロシランの流量が10slpm〜15slpmである請求項8記載の方法。
- 水素ガス/メチルトリクロロシランガス分圧流量比が4〜10である請求項8記載の方法。
- 堆積チャンバーが100torr〜300torrの圧力を有する請求項6記載の方法。
- 少なくとも1つのマンドレルが1355℃〜1370℃の温度を有する請求項6記載の方法。
- 炭化珪素が375W/mK〜390W/mKの熱伝導率を有する請求項6記載の方法。
- 結晶秩序比が0.05〜0.01である請求項6記載の方法。
- 炭化珪素が、堆積チャンバー内で、気体状反応物質供給源から50cm〜140cmの間のマンドレル上に堆積される請求項6記載の方法。
- a)気体状反応物質が少なくとも1つのマンドレルの表面と平行に流れるように、該少なくとも1つのマンドレルを化学蒸着チャンバー内に配置し;
b)水素ガスおよびメチルトリクロロシランガスからなる気体状反応物質を堆積チャンバー内に生じさせ、水素ガスの流量が67slpmであり、メチルトリクロロシランガスの流量が11slpmであり;
c)堆積方法全体にわたって、堆積チャンバー温度を1355℃に、堆積チャンバー圧力を200torrに維持し;さらに
d)該少なくとも1つのマンドレルの表面上に、1.5μm/分の堆積速度で炭化珪素を堆積させ、該炭化珪素が少なくとも375W/mKの熱伝導率および0.10より小さい結晶秩序比を有することを含む、高い熱伝導率および低い積層欠陥を有するβ相多結晶炭化珪素の製造方法。 - 水素/メチルトリクロロシランの気体分圧流量比が6.0である請求項16記載の方法。
- 炭化珪素が、堆積チャンバー内で、気体状反応物質供給源から50cm〜140cmの間の少なくとも1つのマンドレルの表面上に堆積される、請求項16記載の方法。
- 炭化珪素が375W/mKから390W/mKの熱伝導率を有する請求項16記載の方法。
- 炭化珪素が0.05から0.010の結晶秩序比を有する請求項16記載の方法。
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US24726700P | 2000-11-10 | 2000-11-10 | |
US60/247267 | 2000-11-10 |
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JP2009176358A Expired - Lifetime JP5235809B2 (ja) | 2000-11-10 | 2009-07-29 | 高い熱伝導率を有する炭化珪素 |
JP2013016694A Pending JP2013100608A (ja) | 2000-11-10 | 2013-01-31 | 高い熱伝導率を有する炭化珪素 |
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US (2) | US6811761B2 (ja) |
EP (1) | EP1205573A1 (ja) |
JP (3) | JP2002302768A (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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US6939821B2 (en) * | 2000-02-24 | 2005-09-06 | Shipley Company, L.L.C. | Low resistivity silicon carbide |
JP4113971B2 (ja) * | 2002-07-30 | 2008-07-09 | 株式会社豊田自動織機 | 低膨張材料及びその製造方法 |
US8093713B2 (en) * | 2007-02-09 | 2012-01-10 | Infineon Technologies Ag | Module with silicon-based layer |
US8105649B1 (en) | 2007-08-09 | 2012-01-31 | Imaging Systems Technology | Fabrication of silicon carbide shell |
US8765091B2 (en) * | 2007-12-12 | 2014-07-01 | Dow Corning Corporation | Method to manufacture large uniform ingots of silicon carbide by sublimation/condensation processes |
JP5415853B2 (ja) * | 2009-07-10 | 2014-02-12 | 東京エレクトロン株式会社 | 表面処理方法 |
KR101916270B1 (ko) * | 2011-06-24 | 2018-11-07 | 엘지이노텍 주식회사 | 실리콘 카바이드 파우더의 제조방법 |
WO2014027472A1 (ja) * | 2012-08-17 | 2014-02-20 | 株式会社Ihi | 耐熱複合材料の製造方法及び製造装置 |
JP7077288B2 (ja) * | 2019-09-27 | 2022-05-30 | 東海カーボン株式会社 | 多結晶SiC成形体 |
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JPH06199513A (ja) * | 1992-07-31 | 1994-07-19 | Cvd Inc | 高研磨性と高熱伝導率を有する炭化ケイ素の製造方法とその用途 |
JPH08285698A (ja) * | 1995-04-13 | 1996-11-01 | Cvd Inc | 複合熱電対の保護チューブとその成形方法 |
JPH1179846A (ja) * | 1997-09-01 | 1999-03-23 | Tokai Carbon Co Ltd | 炭化珪素成形体 |
JP2000087239A (ja) * | 1998-05-05 | 2000-03-28 | Cvd Inc | 支持なしに立つ炭化ケイ素物品を製造する方法及び装置 |
JP2000199063A (ja) * | 1999-01-06 | 2000-07-18 | Cvd Inc | 化学蒸着によるニアネットシェ―プフリ―スタンディング物品の製造方法 |
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FR2620273B1 (fr) | 1987-09-03 | 1991-10-18 | France Etat Armement | Dispositif pour former et faire circuler un electrolyte liquide dans une pile alcaline amorcable |
TW337513B (en) | 1992-11-23 | 1998-08-01 | Cvd Inc | Chemical vapor deposition-produced silicon carbide having improved properties and preparation process thereof |
US5354580A (en) | 1993-06-08 | 1994-10-11 | Cvd Incorporated | Triangular deposition chamber for a vapor deposition system |
US6077619A (en) * | 1994-10-31 | 2000-06-20 | Sullivan; Thomas M. | Polycrystalline silicon carbide ceramic wafer and substrate |
US6280496B1 (en) | 1998-09-14 | 2001-08-28 | Sumitomo Electric Industries, Ltd. | Silicon carbide based composite material and manufacturing method thereof |
US7018947B2 (en) * | 2000-02-24 | 2006-03-28 | Shipley Company, L.L.C. | Low resistivity silicon carbide |
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- 2001-11-09 EP EP01309480A patent/EP1205573A1/en not_active Withdrawn
- 2001-11-09 US US10/035,877 patent/US6811761B2/en not_active Expired - Lifetime
- 2001-11-12 JP JP2001346030A patent/JP2002302768A/ja active Pending
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2004
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2009
- 2009-07-29 JP JP2009176358A patent/JP5235809B2/ja not_active Expired - Lifetime
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JPH06199513A (ja) * | 1992-07-31 | 1994-07-19 | Cvd Inc | 高研磨性と高熱伝導率を有する炭化ケイ素の製造方法とその用途 |
JPH08285698A (ja) * | 1995-04-13 | 1996-11-01 | Cvd Inc | 複合熱電対の保護チューブとその成形方法 |
JPH1179846A (ja) * | 1997-09-01 | 1999-03-23 | Tokai Carbon Co Ltd | 炭化珪素成形体 |
JP2000087239A (ja) * | 1998-05-05 | 2000-03-28 | Cvd Inc | 支持なしに立つ炭化ケイ素物品を製造する方法及び装置 |
JP2000199063A (ja) * | 1999-01-06 | 2000-07-18 | Cvd Inc | 化学蒸着によるニアネットシェ―プフリ―スタンディング物品の製造方法 |
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US7438884B2 (en) | 2008-10-21 |
US20050000412A1 (en) | 2005-01-06 |
JP2002302768A (ja) | 2002-10-18 |
US20020106535A1 (en) | 2002-08-08 |
JP5235809B2 (ja) | 2013-07-10 |
JP2013100608A (ja) | 2013-05-23 |
US6811761B2 (en) | 2004-11-02 |
EP1205573A1 (en) | 2002-05-15 |
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