JP2009276642A - Sensing circuit, method of driving the same, display device, method of driving the same, and electronic equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a technique of specifying a contact position with high accuracy. <P>SOLUTION: A display device includes: a first substrate and a second substrate that face each other; liquid crystal 99 interposed between the substrates; a plurality of measuring scanning lines 26 extended along the substrates between the substrates; and a plurality of capacitance sensing circuits 91 and a plurality of light sensing circuits 81 arranged in planes along the substrates between the substrates. The light sensing circuits 81 in an j-th column are connected to measuring scanning lines 26 to which any of the plurality of capacitance sensing circuits 91 are not connected, and output light measurement signals T3[j] having levels corresponding to the light quantity of the incident light. The capacitance sensing circuits 91 in the j-th column are connected to the measuring scanning lines 26 to which any of the plurality of light sensing circuits 81 are not connected, include capacitive elements 96 for contact measurement each having the liquid crystal 99, a first electrode 97 and a second electrode 98, and output capacitance measurement signals T4[j] having levels corresponding to the capacitance values of the capacitive elements 96 for contact measurement. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a technique for specifying a contact position.

There is known a display device having a function of detecting that an object such as a finger or a pen touches a screen. For example, Patent Documents 1 and 2 disclose techniques for specifying a contact position by an object by measuring a change in capacitance formed by liquid crystal sandwiched between two electrodes facing each other. For example, Patent Documents 3 and 4 disclose a technique in which a light sensing circuit is built in a display device, and a contact position by an object is specified by measuring a change in the amount of light received by the light sensing circuit.
JP 2006-40289 A JP 2006-189868 A JP 2004-119494 A JP 2008-27292 A

In the former technique, when an object comes into contact with the display device, there is a possibility that a substrate that sandwiches the capacitance is bent, and an area that is too wide as an area in contact with the object is specified. On the other hand, in the latter technique, when the object is close to the display device, it is determined that the object has contacted the display device even if the object is not in contact with the display device. There is a risk of being identified by mistake.
This invention is made | formed in view of the situation mentioned above, and makes it a solution subject to specify a contact position with high precision.

  The present invention provides a first substrate and a second substrate facing each other, a dielectric material sandwiched between the first substrate and the second substrate, and between the first substrate and the second substrate. A plurality of scanning lines extending along the first substrate or the second substrate, and arranged in a plane along the first substrate or the second substrate between the first substrate and the second substrate. A plurality of capacitance sensing circuits and a plurality of light sensing circuits, wherein the light sensing circuit is connected to the scanning line to which none of the plurality of capacitance sensing circuits is connected, and has a size corresponding to the amount of incident light. An optical measurement signal is output, and the capacitive sensing circuit includes a capacitive element connected to the scanning line to which none of the multiple optical sensing circuits is connected, and having the dielectric material, the first electrode, and the second electrode, Capacitor capacity And it outputs the magnitude of the capacitance measurement signal corresponding to the value, to provide a sensing circuit, characterized in that.

  According to this sensing circuit, it is possible to accurately specify the contact position between the object and the display device based on the optical measurement signal output from the optical sensing circuit and the capacitance measurement signal output from the capacitance sensing circuit. it can. Also, according to this sensing circuit, the selection of one scanning line (row selection) is the selection of only the optical sensing circuit or the selection of the capacitive sensing circuit, and the output signal from the sensor selected by one row selection. Since only the optical measurement signal or the capacitance measurement signal is present, data processing in the subsequent circuit is simplified.

  The sensing circuit includes a plurality of sense lines extending between the first substrate and the second substrate along the first substrate or the second substrate, and the sense line includes the capacitive sensing circuit. And the optical sensing circuit may be connected. In this sensing circuit, since the sense line is shared by the capacitive sensing circuit and the optical sensing circuit, for example, the aperture ratio of the optical sensing circuit can be increased.

  In each of the sensing circuits, more optical sensing circuits may be provided than the capacitive sensing circuit. According to this sensing circuit, the specific resolution of the contact position is improved as compared with the case where the number of optical sensing circuits is equal to or less than the number of capacitive sensing circuits. In each of the sensing circuits, a light shift register to which the scanning lines connected to the plurality of light sensing circuits are connected, and a capacitor for connection to the scanning lines connected to the plurality of capacitance sensing circuits. A shift register, and the number of stages of the capacity shift register may be smaller than the number of stages of the optical shift register. Accordingly, for example, a plurality of capacitance sensing circuits each measuring a change in capacitance and outputting a capacitance measurement signal and a plurality of optical sensing circuits each measuring the amount of incident light and outputting an optical measurement signal are provided. As a method for specifying the contact position of the sensing circuit, a first step of sequentially scanning the plurality of capacitance sensing circuits to acquire a capacitance measurement signal, and whether the object has contacted the contact surface based on the acquired capacitance measurement signal A second step of determining whether or not, and a third step of acquiring a light measurement signal by sequentially scanning the plurality of light sensing circuits after it is determined in the second step that the object has touched. And a fourth step of identifying the position of the contact surface with which the object has come into contact based on the optical measurement signal, and the object has contacted in the second step. When the method characterized by repeating the first step and the second step until it is determined that the number of stages of the capacity shift register is less than the number of stages of the optical shift register, a sensing circuit is provided. In the electronic device (for example, a display device), the first step of controlling the capacitance shift register to acquire the capacitance measurement signal and the second step of determining whether or not the object is in contact with the contact surface It is possible to reduce power consumption when repeating.

  In addition, the present invention includes each of the sensing circuits described above and a plurality of pixel circuits arranged in a plane along the first substrate or the second substrate between the first substrate and the second substrate. The pixel circuit includes the dielectric material, and the dielectric material is a liquid crystal. According to another aspect of the present invention, there is provided an electronic device comprising the sensing circuit or the display device.

  The present invention also provides a driving method for each of the sensing circuits, including a capacitive sensing process for driving the plurality of capacitive sensing circuits and an optical sensing process for driving the plurality of optical sensing circuits. Provided is a method characterized by alternately performing a sensing process and the optical sensing process. According to this method, for each frame, an image based only on the optical measurement signals output from all of the plurality of optical sensing circuits, and an image based only on the capacitance measurement signals output from all of the plurality of capacitive sensing circuits. Therefore, the data processing in the subsequent circuit is simplified.

  According to another aspect of the present invention, there is provided a method for driving the display device, comprising: a display capacitance sensing process for driving the plurality of pixel circuits and the plurality of capacitance sensing circuits; and the plurality of pixel circuits and the plurality of light sensing circuits. And a display light sensing process for driving, wherein the display capacitance sensing process and the display light sensing process are alternately performed. According to this method, for each frame, for each frame, an image based only on the optical measurement signal output from all of the plurality of optical sensing circuits, and the capacitance measurement signal output from all of the plurality of capacitance sensing circuits. Therefore, data processing in the subsequent circuit is simplified.

  Hereinafter, the best mode for carrying out the present invention will be described. However, the description of a well-known technique commonly used in a general liquid crystal display device such as using a color filter is omitted as appropriate. In the following description, the drawings are referred to, but the dimensions, dimensional ratios, and shapes in the drawings do not necessarily match the actual ones.

<A: First Embodiment>
FIG. 1 is a block diagram showing a configuration of a sensing circuit 1 according to the first embodiment of the present invention. The sensing circuit 1 includes a measurement region 100 in which a plurality of sensors are arranged in a planar shape (matrix), a measurement scan line drive circuit 20 and a readout circuit 30 that drive each sensor, a measurement scan line drive circuit 20 and A control circuit 500 that controls the reading circuit 30 is included. The plurality of sensors includes a plurality of optical sensing circuits 40 and a plurality of capacitive sensing circuits 50.

  The measurement region 100 is provided with m measurement scanning lines 26 extending in the X direction and n sense lines 35 extending in the Y direction orthogonal to the X direction. m is an even number of 2 or more, and n is a natural number of 2 or more. Each sensor is arranged at a position corresponding to the intersection of the measurement scanning line 26 and the sense line 35. Therefore, these sensors are arranged in a matrix of m rows × n columns.

  The scanning line driving circuit 20 for measurement is controlled by the control circuit 500 and performs scanning of sensors of m rows × n columns. This scan is a so-called jump scan. Specifically, the measurement scanning line driving circuit 20 outputs the scanning signal GSEL [i] (i = 1 to m) output to each of the m measurement scanning lines 26 for each horizontal scanning period (1H). The scanning lines for measurement 26 are sequentially selected by sequentially setting the active level by jumping one line.

  In other words, the measurement scanning line drive circuit 20 performs optical scanning for sequentially selecting odd-numbered m / 2 scanning lines 26 for each horizontal scanning period for each frame, and even-numbered m / 2 scanning lines. Capacitance scanning in which the measurement scanning lines 26 are sequentially selected every horizontal scanning period is repeatedly executed. Although the configuration of the measurement scanning line driving circuit 20 is arbitrary, in the present embodiment, as shown in the figure, an m / 2-stage capacitance shift register 21 and an m / 2-stage optical shift register 22 are provided. The composition is included. An even number of measurement scanning lines 26 are connected to each stage of the capacitance shift register 21, and an odd number of measurement scanning lines 26 are connected to each stage of the light shift register 22.

  The read circuit 30 is controlled by the control circuit 500, reads the measurement signal T [j] (j = 1 to n) from the n sense lines 35, and supplies the measurement signal T [j] to the control circuit 500. The measurement signal T [j] includes an optical measurement signal T1 [j] output to each of the n sense lines 35 by an optical sensing process (optical scan) and an electrostatic sensing process (capacity scan). Thus, the capacitance measurement signal T2 [j] output to each of the n sense lines 35 is a signal alternately connected for each frame.

  The control circuit 500 controls the measurement scanning line drive circuit 20 to repeatedly perform the optical scan and the capacitance scan, and controls the readout circuit 30 to read the measurement signal T [j] (j = 1 to n). Let it come out. In addition, the control circuit 500 acquires the measurement signal T [j] from the readout circuit 30 and specifies the contact position between the object and the sensing circuit 1 based on the acquired measurement signal T [j].

  Each of the plurality of optical sensing circuits 40 is disposed at a position corresponding to the intersection of the odd-numbered measurement scanning lines 26 and the sense lines 35, measures the amount of incident light, and outputs an optical measurement signal T1 [j]. To do. Specifically, the optical sensing circuit 40 includes a photodiode 45 described later, and outputs an optical measurement signal T1 [j] having a magnitude corresponding to the amount of incident light to the photodiode 45 to the corresponding sense line 35. Each of the odd-numbered measurement scanning lines 26 is connected to n light sensing circuits 40, but is not connected to any capacitance sensing circuit 50.

  Each of the plurality of capacitance sensing circuits 50 is arranged at a position corresponding to the intersection of the even-numbered measurement scanning line 26 and the sense line 35, measures a change in capacitance, and outputs a capacitance measurement signal. Specifically, the capacitance sensing circuit 50 includes a later-described contact measurement capacitance element 55, and transmits a capacitance measurement signal T <b> 2 [j] having a magnitude corresponding to the capacitance value of the contact measurement capacitance element 55 to the corresponding sense line 35. Output. The n capacitive sensing circuits 50 are connected to each of the even-numbered measurement scanning lines 26, but none of the optical sensing circuits 40 is connected. That is, in the measurement region 100, the optical sensing circuit 40 and the capacitive sensing circuit 50 are alternately arranged for each row, and each of the n sense lines 35 has m / 2 pieces forming the same column. An optical sensing circuit 40 and m / 2 capacitive sensing circuits 50 are connected.

  Although not shown, the sensing circuit 1 includes a first substrate extending in the X direction and the Y direction, and a second substrate extending in the X direction and the Y direction. Both substrates are opposed to each other. The m measurement scanning lines 26, the n sense lines 35, and the m rows × n columns of sensors are disposed between the two substrates. That is, each of the m measurement scanning lines 26 extends along both substrates, each of the n sense lines 35 extends along both substrates, and the plurality of sensors are connected to both substrates. It will be arranged in a plane along. A dielectric material such as liquid crystal is sandwiched between the substrates. This dielectric material is included in each of the plurality of capacitive sensing circuits 50 and constitutes a contact measuring capacitive element 55 described later. The materials of both the substrates are arbitrary, but the substrate having a surface (contact surface) with which the object comes into contact needs to be formed of a light transmissive material such as glass.

  FIG. 2 is a circuit diagram showing a configuration of the optical sensing circuit 40. As shown in this figure, the optical sensing circuit 40 includes a reset transistor 41, an amplification transistor 42, a selection transistor 43, a reference capacitance element 44, and a photodiode 45. The reset transistor 41, the amplification transistor 42, and the selection transistor 43 are all N-channel transistors. A common potential Vcom is supplied to the anode of the photodiode 45.

  The drain of the reset transistor 41 is connected to the power supply line 36, while the source is connected to the gate of the amplification transistor 42. A power supply potential VRH is supplied to the power supply line 36. The gate of the reset transistor 41 is connected to the control line 25. This control line 25 is one of m control lines 25 extending in the X direction. The measurement scanning line drive circuit 20 sets the reset signal GRST [p] output to each of the m control lines 25 to the active level in order for each horizontal scanning period. p is an odd number from 1 to m. The reset transistor 41 transitions to an ON state when the reset signal GRST [p] is at an active level (for example, the potential VD), and the reset signal GRST [p] is at the inactive level (for example, GND (= 0V)). In some cases, the state transits to the off state.

  The drain of the amplification transistor 42 is connected to the power supply line 36, while the source is connected to the drain of the selection transistor 43. A capacitive element 44 is interposed between the gate of the amplification transistor 42 and the drain of the reset transistor 41. The gate of the amplification transistor 42 is connected to the cathode of the photodiode 45. The source of the selection transistor 43 is connected to the sense line 35, and the gate is connected to the measurement scanning line 26. A selection signal GSEL [p] is supplied to the measurement scanning line 26. The selection transistor 43 is turned on when the selection signal GSEL [p] is at a high level, and is turned off when the selection signal GSEL [p] is at a low level.

  As shown in FIG. 3, the optical sensing circuit 40 operates with the reset period Tres, the exposure period Texp, and the readout period Tout as one unit. In the reset period Tres, the level of the reset signal GRST [p] supplied to the control line 25 becomes an active level, and the selection signal GSEL [p] supplied to the measurement scanning line 26 is maintained at a low level. Therefore, as shown in FIG. 4, in the reset period Tres, the reset transistor 41 is turned on, while the selection transistor 43 is turned off. Therefore, the potential VA of the gate of the amplification transistor 42 is set (reset) to the power supply potential VRH. The power supply potential VRH is also supplied to the cathode of the photodiode 45, and the voltage between the anode and the cathode of the photodiode 45 is held at VRH-Vcom.

  As shown in FIG. 3, in the exposure period Texp subsequent to the reset period Tres, the level of the reset signal GRST [p] is inactive, and the selection signal GSEL [p] is maintained at a low level. Therefore, as shown in FIG. 5, the reset transistor 41 transitions to the off state, while the selection transistor 43 maintains the off state. Accordingly, the charge output from the photodiode 45 is accumulated in the capacitor element 44. As a result, the gate potential VA of the amplifying transistor 42 is VA = VRH−Vpd when the voltage of the photodiode 45 is Vpd. Vpd is determined according to the amount of incident light (environment light) to the photodiode 45.

  As shown in FIG. 3, in the readout period Tout subsequent to the exposure period Texp, the level of the selection signal GSEL [p] is high. Therefore, as shown in FIG. 6, the selection transistor 43 is turned on. At this time, since the reset transistor 41 is kept off, a current It having a magnitude corresponding to the potential VA of the gate of the amplification transistor 42 flows through the sense line 35 and is supplied to the read circuit 30. In this way, the optical measurement signal T1 [j] is output.

  When the object contacts or approaches the sensing circuit 1 during the exposure period Texp, the amount of light incident on the photodiode 45 changes. When the amount of light incident on the photodiode 45 changes, the potential VA of the gate of the amplification transistor 42 also changes accordingly. Therefore, the level of the optical measurement signal T1 [j] that is output when the object is not in contact with or close to the contact surface, and the optical measurement signal that is output when the object is in contact with or close to the contact surface. It is different from the level of T1 [j]. This property is used to specify the contact position.

  FIG. 7 is a circuit diagram showing a configuration of the capacitance sensing circuit 50. As shown in this figure, the capacitance sensing circuit 50 includes a reset transistor 51, an amplification transistor 52, a selection transistor 53, a reference capacitance element 54, and a contact measurement capacitance element 55. The reset transistor 51, the amplification transistor 52, and the selection transistor 53 are all N-channel transistors. The contact measuring capacitive element 55 includes a first electrode 56, a second electrode 57, and a dielectric material to which an electric field generated between the two electrodes is applied. This dielectric material is the above-mentioned dielectric material sandwiched between the first substrate and the second substrate. A common potential Vcom is supplied to the first electrode 56.

  The drain of the reset transistor 51 is connected to the power supply line 36, while the source is connected to the gate of the amplification transistor 52. A power supply potential VRH is supplied to the power supply line 36. The gate of the reset transistor 51 is connected to the control line 25. The measurement scanning line drive circuit 20 sets the reset signal GRST [q] output to each of the m control lines 25 to the active level in order for each horizontal scanning period. q is an even number from 1 to m. The reset transistor 51 transitions to the on state when the reset signal GRST [q] is at the active level, and transitions to the off state when the reset signal GRST [q] is at the inactive level.

  The drain of the amplification transistor 52 is connected to the power supply line 36, while the source is connected to the drain of the selection transistor 53. A reference capacitive element 54 is interposed between the gate of the amplification transistor 52 and the control line 25. The gate of the amplification transistor 52 is connected to the second electrode 57 of the contact measuring capacitive element 55. The source of the selection transistor 53 is connected to the sense line 35, and the gate is connected to the measurement scanning line 26. The selection signal GSEL [q] is supplied to the measurement scanning line 26. The selection transistor 53 is turned on when the selection signal GSEL [q] is at a high level, and is turned off when the selection signal GSEL [q] is at a low level.

  As shown in FIG. 8, the capacitance sensing circuit 50 operates with the reset period Tres, the sensing period Tsen, and the readout period Tout as one unit. In the reset period Tres, the level of the reset signal GRST [q] supplied to the control line 25 becomes an active level, and the selection signal GSEL [q] supplied to the measurement scanning line 26 is maintained at a low level. Therefore, as shown in FIG. 9, in the reset period Tres, the reset transistor 51 is turned on, while the selection transistor 53 is turned off. Therefore, the potential VA of the gate of the amplification transistor 52 is set (reset) to the power supply potential VRH. The power supply potential VRH is also supplied to the second electrode 57 of the contact measurement capacitive element 55, and the voltage between the first electrode 56 and the second electrode 57 of the contact measurement capacitive element 55 is held at VRH−Vcom. The

  As shown in FIG. 8, in the sensing period Tsen subsequent to the reset period Tres, the level of the reset signal GRST [q] is inactive, and the selection signal GSEL [q] is maintained at a low level. Therefore, as shown in FIG. 10, the reset transistor 51 transits to the off state, while the selection transistor 53 maintains the off state. Since the impedance of the gate of the amplification transistor 52 is sufficiently high, the gate of the amplification transistor 52 is in an electrically floating state during the sensing period Tsen. Since one electrode of the reference capacitive element 54 is connected to the control line 25, when the level of the reset signal GRST [q] supplied to the control line 25 changes from the active level to the inactive level, the amplifying transistor 52 accordingly. The gate potential VA also changes due to capacitive coupling. The amount of change in the gate potential VA at this time is a value corresponding to the capacitance ratio between the reference capacitive element 54 and the contact measuring capacitive element 55.

  As shown in FIG. 8, in the readout period Tout subsequent to the sensing period Tsen, the level of the selection signal GSEL [q] becomes a high level. Therefore, as shown in FIG. 11, while the reset transistor 51 maintains the off state, the selection transistor 53 transitions to the on state. Therefore, a current It having a magnitude corresponding to the gate potential VA of the amplification transistor 52 flows through the sense line 35 and is supplied to the read circuit 30. In this way, the capacitance measurement signal T2 [j] is output.

  In the sensing period Tsen, when the object comes into contact with the contact surface, the capacitance value of the contact measuring capacitive element 55 changes. When the capacitance value of the contact measuring capacitive element 55 changes, the potential VA of the gate of the amplification transistor 52 also changes accordingly. Therefore, the level of the capacitance measurement signal T2 [j] that is output when the object is not in contact with the contact surface and the capacitance measurement signal T2 [j] that is output when the object is in contact with the contact surface. Different from the level. This property is used to specify the contact position.

Note that the capacitance value of the contact measuring capacitive element 55 in a state where the object is not in contact with the contact surface is Clc, and the change amount of the capacitance value of the contact measuring capacitive element 55 when the object is in contact with the contact surface is Δ Assuming Clc, the capacitance value of the reference capacitor element 54 is Cref, and the potential change of the control line 25 is ΔV (= VD), the amount of change Δ in the gate potential VA of the amplification transistor 52 when the object contacts the contact surface Δ VA is represented by the following formula (1). However, the parasitic capacitance is ignored in the equation (1).
ΔVA = {(Cref × ΔClc) × ΔV} / {(Cref + Clc + ΔClc) (Cref + Clc)} (1)

  FIG. 12 is a timing chart showing the operation of the sensing circuit 1. As shown in this figure, in the optical scan, when a certain horizontal scanning period (1H) is reached, the level of the reset signal GRST [1] supplied from the control line 25 of the first row to the optical sensing circuit 40 of the first row. Becomes the active level, and the optical sensing circuit 40 in the first row reaches the reset period Tres. In this horizontal scanning period, the level of the reset signal GRST [1] becomes the inactive level, and the light sensing circuit 40 in the first row reaches the exposure period Texp.

  When the next horizontal scanning period is reached, the level of the reset signal GRST [3] supplied from the control line 25 of the third row to the optical sensing circuit 40 of the third row becomes an active level, and the optical sensing circuit 40 of the third row is activated. The reset period Tres is reached. In this horizontal scanning period, the level of the reset signal GRST [3] becomes the inactive level, and the optical sensing circuit 40 in the third row reaches the exposure period Texp.

  In the subsequent horizontal scanning period, the level of the selection signal GSEL [1] supplied from the measurement scanning line 26 of the first row to the optical sensing circuit 40 of the first row changes from the low level to the high level. The optical sensing circuit 40 in one row reaches the readout period Tout. Then, along with the end of the horizontal scanning period, the level of the selection signal GSEL [1] transitions to the low level, and the reading period Tout ends. In the readout period Tout, the magnitude of the measurement signal T [j] (optical measurement signal T1 [j]) supplied from the optical sensing circuit 40 in the first row to the readout circuit 30 via the n sense lines 35 is as follows. The light sensing circuit 40 has a size corresponding to the amount of light incident on the photodiode 45.

  In the next horizontal scanning period, the level of the selection signal GSEL [3] supplied from the measurement scanning line 26 in the third row to the optical sensing circuit 40 in the third row transits from the low level to the high level, and the third row The optical sensing circuit 40 reaches the readout period Tout. Then, along with the end of the horizontal scanning period, the level of the selection signal GSEL [3] changes to the low level, and the reading period Tout ends. In the readout period Tout, the magnitude of the measurement signal T [j] (optical measurement signal T1 [j]) supplied from the optical sensing circuit 40 in the third row to the readout circuit 30 via the n sense lines 35 is as follows. The light sensing circuit 40 has a size corresponding to the amount of light incident on the photodiode 45.

  As described above, in the optical scan, the odd-numbered rows of the optical sensing circuits 40 sequentially reach a series of cycles (reset period Tres, exposure period Texp, and readout period Tout) for each horizontal scanning period. The magnitude of the supplied measurement signal T [j] (optical measurement signal T1 [j]) is a magnitude corresponding to the amount of incident light to each photodiode 45 of the optical sensing circuit 40 that has reached the readout period. . The length of the exposure period Texp shown in the drawing is merely an example, and the magnitude of the measurement signal T [j] (optical measurement signal T1 [j]) from the optical sensing circuit 40 is the size of each of the optical sensing circuits 40. The length may be sufficient to be a size corresponding to the amount of light incident on the photodiode 45. The change of the length of the exposure period Texp can be realized by changing the rising timing of the selection signal GSEL [p].

  On the other hand, in the capacitance scan, when a certain horizontal scanning period comes, the level of the reset signal GRST [2] supplied from the control line 25 of the second row to the capacitance sensing circuit 50 of the second row becomes the active level, and the second row The capacitance sensing circuit 50 reaches the reset period Tres. In this horizontal scanning period, the level of the reset signal GRST [2] becomes the inactive level, and the capacitance sensing circuit 50 in the second row reaches the sensing period Tsen. Then, the level of the selection signal GSEL [2] supplied from the measurement scanning line 26 of the second row to the capacitance sensing circuit 50 of the second row changes from the low level to the high level, and the capacitance sensing circuit 50 of the second row. Reaches the readout period Tout. Then, along with the end of the horizontal scanning period, the level of the selection signal GSEL [2] changes to the low level, and the reading period Tout ends. In the readout period Tout, the magnitude of the measurement signal T [j] (capacitance measurement signal T2 [j]) supplied from the capacitance sensing circuit 50 in the second row to the readout circuit 30 via the n sense lines 35 is as follows. These capacitance sensing circuits 50 each have a size corresponding to the capacitance value of the contact measuring capacitance element 55.

  When the next horizontal scanning period is reached, the level of the reset signal GRST [4] supplied from the control line 25 in the fourth row to the capacitance sensing circuit 50 in the fourth row becomes an active level, and the capacitance sensing circuit 50 in the fourth row becomes active. The reset period Tres is reached. In this horizontal scanning period, the level of the reset signal GRST [4] becomes the inactive level, and the capacitance sensing circuit 50 in the fourth row reaches the sensing period Tsen. Then, the level of the selection signal GSEL [4] supplied from the measurement scanning line 26 in the fourth row to the capacitance sensing circuit 50 in the fourth row changes from the low level to the high level, and the capacitance sensing circuit 50 in the fourth row. Reaches the readout period Tout. Then, along with the end of the horizontal scanning period, the level of the selection signal GSEL [4] transitions to the low level, and the reading period Tout ends. In the readout period Tout, the magnitude of the measurement signal T [j] (capacitance measurement signal T2 [j]) supplied from the capacitance sensing circuit 50 in the fourth row to the readout circuit 30 via the n sense lines 35 is as follows. These capacitance sensing circuits 50 each have a size corresponding to the capacitance value of the contact measuring capacitance element 55.

  As described above, in the capacitive scan, the capacitive sensing circuits 50 in the even rows reach a series of cycles (the reset period Tres, the sensing period Tsen, and the readout period Tout) in order for each horizontal scanning period, while the readout circuit 30 enters. The magnitude of the supplied measurement signal T [j] (capacitance measurement signal T2 [j]) is a magnitude corresponding to the capacitance value of each contact measurement capacitance element 55 of the capacitance sensing circuit 50 that has reached the readout period. . The length of the sensing period Tsen shown in the drawing is merely an example, and the magnitude of the measurement signal T [j] (capacitance measurement signal T2 [j]) from the capacitance sensing circuit 50 is the value of each capacitance sensing circuit 50. The length may be sufficient to be a size corresponding to the capacitance value of the capacitance element 55 for contact measurement. The change of the length of the sensing period Tsen can be realized by changing the rising timing of the selection signal GSEL [q].

  In the control circuit 500, the image of the image shown in FIG. 13 is obtained for the optical scan frame based on the optical measurement signal T1 [j] from the optical sensing circuit 40 of m / 2 rows × n columns. The control circuit 500 binarizes this image (light measurement signal T1 [j]) based on a predetermined threshold value (reference level), and includes a region (light region) including a place where the object is in contact with or close to the object. ). In this binarization, for example, the value of the pixel in the light region is 1 and the value of the other pixels is 0. In FIG. 13, for the convenience of description, the bright part is dark and the dark part is thin, but actually, in the region including the place where the target object is in contact or close (in the vicinity of the center in the figure). An image (light image) that is dark and becomes brighter as the distance from the region increases.

  In the control circuit 500, the image of the image shown in FIG. 14 is obtained based on the capacitance measurement signal T2 [j] from the capacitance sensing circuit 50 of m / 2 rows × n columns for the capacitance scan frame. That is, an image (capacity image) is obtained that is bright in a region (near the center in the figure) including a place where the object is in contact and becomes darker as the distance from the region increases. The control circuit 500 binarizes this image (capacitance measurement signal T2 [j]) based on a predetermined threshold value (reference level), and an area (capacitance area) including a place where the object is in contact is obtained. Identify. In this binarization, for example, the value of the pixel in the capacity region is 1 and the value of the other pixels is 0.

  As apparent from FIGS. 13 and 14, the capacitance region is usually wider than the light region. This tendency is particularly remarkable when there are a plurality of contact locations. This is because when there are a plurality of contact locations, the first substrate or the second substrate is easily bent in a wide range between the plurality of contact locations. In a severe case, one capacity region may include a plurality of contact points. On the other hand, the detection accuracy of the presence / absence of contact between the sensing circuit 1 and the object is usually higher in the detection using the capacitive image than in the detection using the optical image. In the detection using the optical image, even if the target object is not actually in contact, it may be determined that the target object is in contact if the target object is close, whereas the detection using the capacitive image is performed. This is because such a false detection cannot occur.

  Therefore, in the sensing circuit 1, the control circuit 500 combines the binarized light image and the binarized capacitance image by calculating a logical product for each corresponding pixel, and thereby Using the obtained binarized composite image, a process of specifying a contact position between the sensing circuit 1 and the object is configured. The binarized composite image is as schematically illustrated in FIG.

  As described above, the sensing circuit 1 includes a first substrate and a second substrate facing each other, a dielectric material sandwiched between both substrates, and a plurality of measurement circuits extending along both substrates between both substrates. The scanning line 26 includes a plurality of capacitance sensing circuits 50 and a plurality of optical sensing circuits 40 arranged in a plane between the two substrates along the two substrates. In the sensing circuit 1, the optical sensing circuit 40 in the j-th column is connected to the measurement scanning line 26 to which none of the plurality of capacitive sensing circuits 50 is connected, and the optical measurement signal T <b> 1 having a magnitude corresponding to the amount of incident light. j] is output. In the sensing circuit 1, the capacitance sensing circuit 50 in the j-th column is connected to the measurement scanning line 26 to which none of the plurality of optical sensing circuits 40 is connected, and the above-described dielectric substance, the first electrode 56, and the second electrode And a capacitance measurement signal T2 [j] having a magnitude corresponding to the capacitance value of the contact measurement capacitance element 55 is output.

  Therefore, according to the sensing circuit 1, the contact position between the object and the display device can be accurately specified based on these measurement signals. In addition, according to the sensing circuit 1, a single row selection is a selection of only the optical sensing circuit 40 or a selection of the capacitance sensing circuit 50, and the output signal from the sensor selected by the single row selection is an optical measurement. Since only the signal T1 or only the capacitance measurement signal T2 is provided, data processing in the subsequent circuit is simplified.

  In addition, the sensing circuit 1 includes a plurality of sense lines 35 extending along both substrates between the first substrate and the second substrate, and the capacitance sensing circuit 50 and the optical sensing circuit 40 are included in the sense lines 35. Connected. That is, in the sensing circuit 1, the sense line 35 is shared by the capacitive sensing circuit 50 and the optical sensing circuit 40. Therefore, according to the sensing circuit 1, for example, the aperture ratios of the optical sensing circuit 91 and the pixel circuit 11 can be increased.

  In the present embodiment, as described above, the interlace scanning is performed. That is, a capacitive sensing process (capacity scanning) for driving all of the capacitive sensing circuits 50 of m / 2 rows × n columns and an optical sensing process for driving all of the optical sensing circuits 40 of m / 2 rows × n columns. (Optical scanning) is alternately performed for each frame, and for each frame, an optical image based only on the optical measurement signal T1 [j] output from these optical sensing circuits 40 and an output from these capacitive sensing circuits 50 A capacitance image based only on the capacitance measurement signal T2 [j] thus obtained is obtained. Therefore, according to the present embodiment, data processing in the subsequent circuit is simplified.

  As one of the combination of the advantages of the optical method and the capacitance method, the optical sensing circuit 40 is provided with a contact measuring capacitive element, and the contact measuring capacitive element is connected in parallel with the photodiode 45. It is also conceivable to provide a photodiode in the capacitance sensing circuit 50 and connect this photodiode in parallel with the contact measuring capacitance element 55. However, in these embodiments, the reset operation is realized in any way. However, there are unsolved problems such as how to solve the problem that the output current of the photodiode becomes significantly smaller than the output current of the capacitive element for contact measurement. On the other hand, in this embodiment, since the optical sensing circuit and the capacitive sensing circuit are provided separately, the above-described disadvantage does not occur.

<B: Second Embodiment>
FIG. 16 is a block diagram showing the configuration of the display device 2 according to the second embodiment of the present invention. The display device 2 is a so-called transmissive liquid crystal display device. The display device 2 is greatly different from the sensing circuit 1 in that it has a display circuit in addition to the sensor. Specifically, the display device 2 includes a display measurement region 200 in which a plurality of unit circuits (a plurality of unit circuits 80 and a plurality of unit circuits 90) are arranged in a plane instead of the measurement region 100, and includes a control circuit. A control circuit 550 is provided in place of 500, and a display scanning line driving circuit 60 and a data line driving circuit 70 for driving each unit circuit and a backlight (not shown) are provided.

  The backlight is provided on the back side of the display measurement area 200. The “rear surface” of the display measurement region 200 is a surface opposite to the contact surface. If the outer surface of the first substrate is a contact surface, the outer surface of the second substrate is the rear surface. In the display device 2, both the first substrate and the second substrate are formed of a light transmissive material, and the above-described dielectric substance is limited to liquid crystal. The plurality of unit circuits are arranged in a plane along the first substrate and the second substrate between the first substrate and the second substrate.

  As shown in the figure, in the display measurement region 200, similarly to the measurement region 100, m measurement scanning lines 26 extending in the X direction and n sense lines 35 extending in the Y direction are included. Provided. Similar to the sensor in the sensing circuit 1, the unit circuits are arranged at positions corresponding to the intersections of the measurement scanning lines 26 and the sense lines 35 and are arranged in a matrix of m rows × n columns. The display measurement region 200 is provided with m display scanning lines 65 extending in the X direction and n × 3 data lines 75 extending in the Y direction. The unit circuit is also disposed at a position corresponding to the intersection of the display scanning line 65 and the bundle of three data lines 75.

  The display scanning line driving circuit 60 sets the scanning signal Gate [i] output to each of the m display scanning lines 63 to the active level in order for each horizontal scanning period (1H), thereby displaying each display. The process of sequentially selecting the scanning lines 65 is repeatedly executed every vertical scanning period (1V). The data line driving circuit 70 is a data signal D [u] (u = u) corresponding to each pixel circuit 11 (described later) corresponding to the display scanning line 65 selected by the display scanning line driving circuit 60. 1 to n × 3) are output to each data line 75. The data signal D [u] has a potential corresponding to the gradation specified for the corresponding pixel circuit 11 (described later).

  As described above, since 1V = 1H × m in the present embodiment, the measurement scanning line drive circuit 20 scans the scanning signal GSEL [i] (i) output to each of the m measurement scanning lines 26. = 1 to m) is sequentially set to the active level by jumping one row every 2H, thereby sequentially selecting the measurement scanning lines 26. In other words, in the present embodiment, the measurement scanning line driving circuit 20 performs optical scanning for sequentially selecting odd-numbered m / 2 measurement scanning lines 26 every 2H, and even-numbered m / second for each frame. Capacitance scanning in which the two measurement scanning lines 26 are sequentially selected every 2H is repeatedly executed.

  Each of the plurality of unit circuits 80 corresponds to an intersection between the odd-numbered measurement scanning lines 26 and the sense lines 35 (an intersection between the odd-numbered display scanning lines 65 and the bundle of three data lines 75). Placed in position. On the other hand, each of the plurality of unit circuits 90 is at the intersection of the even-numbered measurement scanning line 26 and the sense line 35 (intersection of the even-numbered display scanning line 65 and the bundle of three data lines 75). It is arranged at the corresponding position.

  As shown in FIG. 17, the unit circuit 80 includes one display unit circuit 10 and one light sensing circuit 81. The display unit circuit 10 includes a set of pixel circuits 11. Of the set of pixel circuits 11, one is a pixel (R pixel) whose display color is R (red), and another one is a pixel whose display color is G (G pixel). The remaining one is a pixel (B pixel) whose display color is B (blue). A set of pixel circuits 11 is arranged in the X direction, and each pixel circuit 11 is arranged at a position corresponding to the intersection of the display scanning line 65 and the data line 75.

  The pixel circuit 11 includes a liquid crystal element 12 and a transistor 13. The liquid crystal element 12 includes a pixel electrode 14 and a common electrode 15, and a liquid crystal 16 to which an electric field generated between them is applied. The liquid crystal 16 is a part of the liquid crystal that is sandwiched between the first substrate and the second substrate. In the present embodiment, a lateral electric field method in which the orientation of the liquid crystal 16 is controlled by a horizontal electric field generated between the pixel electrode 12 and the common electrode 15 is employed, but other methods may be employed. .

  A common potential Vcom is supplied to the common electrode 15. The transistor 13 is composed of an N-channel TFT (Thin Film Transistor), and is interposed between the pixel electrode 14 and the data line 75 to control conduction between the two. The gate of the transistor 13 is connected to the display scanning line 65. Accordingly, when the i-th display scanning line 65 is selected, the transistor 13 of each pixel circuit 11 in the i-th row is turned on, and the pixel electrode 12 of the pixel circuit 11 in the u-th column among these pixel circuits 11. Is supplied with a data signal D [u] from the data line 75.

  When the potential of the data signal D [u] supplied to the pixel electrode 12 of the pixel circuit 11 in the i-th row and u-th column is VD, this supply causes the pixel electrode 14 and the common electrode 15 of the pixel circuit 11 to be connected. A voltage VD-Vcom is applied between them. That is, the light transmittance of the liquid crystal element 16 in each pixel circuit 11 (the ratio of the amount of light transmitted to the observation side from the light emitted from the backlight to the liquid crystal element 12) changes according to the potential of the supplied data signal. To do.

  The optical sensing circuit 81 outputs an optical measurement signal T3 [j] having a magnitude corresponding to the amount of incident light to the photodiode 86, which will be described later, to the readout circuit 30. The optical sensing circuit 81 has the same configuration as the optical sensing circuit 40, and includes a reset transistor 82 corresponding to the reset transistor 41, an amplification transistor 83 corresponding to the amplification transistor 42, a selection transistor 84 corresponding to the selection transistor 43, A reference capacitive element 85 corresponding to the reference capacitive element 44 and a photodiode 86 corresponding to the photodiode 45 are provided. However, the number of photodiodes 86 included in one optical sensing circuit 81 is two. Most of the light incident on the photodiode 86 is light emitted from the backlight and reflected by the object.

  Of the two photodiodes 86 included in one optical sensing circuit 81, one is disposed in the vicinity of the pixel circuit 11 of the G pixel, and the other is disposed in the vicinity of the pixel circuit 11 of the B pixel. The cathodes of these two photodiodes 86 are connected to the gate of the amplification transistor 83, respectively. The reason why the photodiode 86 is not disposed in the vicinity of the pixel circuit 11 of the R pixel is that elements such as the amplification transistor 83 and the reference capacitor 85 are disposed in the vicinity of the pixel circuit 11 of the R pixel.

  As shown in FIG. 18, the unit circuit 90 includes one display unit circuit 10 and one capacitance sensing circuit 91. Since the display unit circuit 10 includes the pair of pixel circuits 11 as described above, in the display device 2, m × n × 3 pixel circuits 11 are first between the first substrate and the second substrate. It is arranged along the substrate and the second substrate. Further, as described above, the unit circuits of m rows × n columns are arranged along the first substrate and the second substrate between the first substrate and the second substrate, and therefore, between the two substrates, m rows × n columns of sensors are arranged along both substrates.

  The capacitance sensing circuit 91 outputs a capacitance measurement signal T4 [j] having a magnitude corresponding to a capacitance value of a later-described contact measurement capacitance element 96 to the readout circuit 30. The capacitive sensing circuit 91 has the same configuration as that of the capacitive sensing circuit 50. Therefore, in the display device 2, the n optical sensing circuits 81 are connected to each of the odd-numbered measurement scanning lines 26, while no unit circuit 90 is connected. Further, n capacitive sensing circuits 91 are connected to each of the even-numbered measurement scanning lines 26, while no unit circuit 80 is connected. Further, each of the n sense lines 35 is connected to m / 2 optical sensing circuits 81 and m / 2 capacitive sensing circuits 91 that form the same column.

  The capacitance sensing circuit 91 includes a reset transistor 92 corresponding to the reset transistor 51, an amplification transistor 93 corresponding to the amplification transistor 52, a selection transistor 94 corresponding to the selection transistor 53, and a reference capacitance element 95 corresponding to the reference capacitance element 54. The contact measurement capacitive element 96 corresponding to the contact measurement capacitive element 55 is provided. However, the number of capacitive elements 96 for contact measurement included in one capacitive sensing circuit 91 is two.

  The contact measuring capacitive element 96 includes a first electrode 97 corresponding to the first electrode 56, a second electrode 98 corresponding to the second electrode 57, and a liquid crystal 99 to which an electric field generated between both electrodes is applied. . The liquid crystal 99 is a part of the liquid crystal that is sandwiched between the first substrate and the second substrate. Of the two contact measuring capacitance elements 96 included in one capacitance sensing circuit 91, one is arranged in the vicinity of the pixel circuit 11 of the G pixel, and the other is arranged in the vicinity of the pixel circuit 11 of the B pixel. The second electrodes 97 of these two contact measuring capacitance elements 96 are respectively connected to the gate of the amplification transistor 93. The reason why the contact measuring capacitive element 96 is not disposed near the pixel circuit 11 of the R pixel is the same as the reason why the photodiode 86 is not disposed near the pixel circuit 11 of the R pixel in the optical sensing circuit 91.

  FIG. 19 is a timing chart showing the operation of the display device 2. As shown in this figure, when a certain horizontal scanning period (1H) is reached, the scanning signal Gate [1] supplied from the display scanning line 65 of the first row to the n × 3 pixel circuits 11 of the first row. Becomes the active level, the transistor 13 is turned on in these pixel circuits 11, and the data signal from the data line 75 corresponding to the pixel electrode 12 of each of these pixel circuits 11 (for example, the pixel circuit 11 in the u-th column). (For example, the data signal D [u]) is supplied, and the light transmittance of the liquid crystal elements 16 of these pixel circuits 11 corresponds to the potential of the supplied data signal. The level of the scanning signal Gate [1] becomes the inactive level after the horizontal scanning period (1H) elapses.

  Thereafter, the level of the scanning signal Gate [i] related to the display scanning line 65 of the next row (i-th row) changes in the same manner as described above for each horizontal scanning period. Then, when the vertical scanning period (1 V) has elapsed, the level of the scanning signal Gate [m] becomes the inactive level, and the display processing for one frame is completed. Then, when the next horizontal scanning period comes, the level of the scanning signal Gate [1] becomes the active level again, and the display processing of the next frame is started.

On the other hand, the optical scan and the capacitive scan are alternately performed for each frame.
In the optical scan, when the horizontal scanning period (1H) in which the level of the scanning signal Gate [1] becomes the active level is reached, the reset signal GRST supplied from the control line 25 of the first row to the optical sensing circuit 81 of the first row. The level [1] becomes the active level, and the optical sensing circuit 81 in the first row reaches the reset period Tres. In this horizontal scanning period, the level of the reset signal GRST [1] becomes the inactive level, and the light sensing circuit 81 in the first row reaches the exposure period Texp. In the next horizontal scanning period (1H), the current state is maintained. Thereafter, the level of the reset signal GRST [p] related to the control line 25 of the next row (p-th row) in the odd-numbered row changes in the same manner as described above every 2H.

  Then, in 2H later, the level of the selection signal GSEL [1] supplied from the measurement scanning line 26 of the first row to the optical sensing circuit 81 of the first row transits from the low level to the high level, The optical sensing circuit 81 in the row reaches the readout period Tout. Then, along with the end of 2H, the level of the selection signal GSEL [1] transitions to the low level, and this read period Tout ends. In the readout period Tout, the magnitude of the measurement signal T [j] (optical measurement signal T3 [j]) supplied from the optical sensing circuit 81 in the first row to the readout circuit 30 via the n sense lines 35 is as follows. The light sensing circuit 81 has a size corresponding to the amount of light incident on the two photodiodes 86. Thereafter, the level of the reset signal GRST [p] related to the control line 25 of the next row (p-th row) in the odd-numbered row changes in the same manner as described above every 2H.

  In the capacitive scan, when the horizontal scanning period (1H) in which the level of the scanning signal Gate [1] becomes the active level is reached, the reset signal GRST supplied from the control line 25 of the second row to the optical sensing circuit 81 of the second row. The level [2] becomes the active level, and the capacitance sensing circuit 91 in the second row reaches the reset period Tres. In this horizontal scanning period, the level of the reset signal GRST [2] becomes the inactive level, and the capacitance sensing circuit 91 in the second row reaches the sensing period Tsen. In 2H starting from 1H, the level of the selection signal GSEL [2] supplied from the second-row measurement scanning line 26 to the second-row capacitance sensing circuit 91 changes from the low level to the high level. The capacitance sensing circuit 91 in the second row reaches the readout period Tout. Then, along with the end of 2H, the level of the selection signal GSEL [2] changes to the low level, and this read period Tout ends. In the readout period Tout, the magnitude of the measurement signal T [j] (capacitance measurement signal T4 [j]) supplied from the capacitance sensing circuit 91 in the second row to the readout circuit 30 via the n sense lines 35 is as follows. These capacitance sensing circuits 91 each have a size corresponding to the capacitance value of the two contact measuring capacitance elements 96.

  Thereafter, for every 2H, the level of the reset signal GRST [q] related to the control line 25 of the next row (the qth row) in the even row and the level of the selection signal GSEL [q] related to the measurement scanning line 26 of the row. However, it changes in the same manner as described above. Note that the lengths of the exposure period Texp and the sensing period Tsen shown in the drawing are merely examples, as in the first embodiment.

  The processing by the control circuit 550 is the same as the processing by the control circuit 500. However, in the present embodiment, most of the light incident on the photodiode 86 is light emitted from the backlight and reflected by the object, so that the light / dark relationship in FIG. 13 correctly represents the actual light / dark relationship. Will be. The processing by the control circuit 550 is determined based on this fact.

  As described above, the display device 2 includes a sensing circuit. The sensing circuit includes a first substrate and a second substrate facing each other, a liquid crystal 15 sandwiched between both substrates, a plurality of measurement scanning lines 26 extending along both substrates between both substrates, A plurality of capacitive sensing circuits 91 and a plurality of optical sensing circuits 81 arranged in a plane along both substrates between the substrates are provided, and no capacitive sensing circuit 91 is connected to the jth row optical sensing circuit 81. Connected to the measurement scanning line 26, outputs an optical measurement signal T3 [j] having a magnitude corresponding to the amount of incident light, and the capacitance sensing circuit 91 in the j-th column is not connected to any optical sensing circuit 91. A capacitance measuring signal connected to the scanning line 26 and including a contact measuring capacitive element 96 having the liquid crystal 15, the first electrode 97 and the second electrode 98, and having a magnitude corresponding to the capacitance value of the contact measuring capacitive element 96. T4 And it outputs the j].

  Therefore, according to the display device 2, the contact position between the object and the display device can be accurately specified based on these measurement signals. Further, according to the display device 2, a single row selection related to the sensor is a selection of only the optical sensing circuit 81 or a selection of the capacitance sensing circuit 91, and an output signal from the sensor selected by the single row selection is obtained. Since only the optical measurement signal T3 or the capacitance measurement signal T4 is provided, data processing in the subsequent circuit is simplified.

  In addition, the display device 2 includes a plurality of sense lines 35 extending along both substrates between the first substrate and the second substrate, and the capacitance sensing circuit 91 and the optical sensing circuit 81 are included in the sense lines 35. Connected. That is, in the display device 2, the sense line 35 is shared by the capacitance sensing circuit 91 and the optical sensing circuit 81. Therefore, according to the display device 2, for example, the aperture ratio of the light sensing circuit 91 and the pixels can be increased.

  In the present embodiment, as described above, the interlace scanning is performed. That is, a display capacitance sensing process for driving all of the pixel circuits 11 of m rows × n × 3 columns and all of the capacitance sensing circuits 91 of m / 2 rows × n columns, and m rows × n × 3 columns. The display light sensing process for driving all of the pixel circuits 11 and all of the light sensing circuits 81 of m / 2 rows × n columns is performed alternately for each frame, and these light sensing circuits 81 for each frame. An optical image based only on the optical measurement signal T3 [j] output from the above and a capacitance image based only on the capacitance measurement signal T4 [j] output from these capacitance sensing circuits 91 are obtained. Therefore, according to the present embodiment, data processing in the subsequent circuit is simplified.

  In the present embodiment, since the optical sensing circuit and the capacitive sensing circuit are provided separately, the output current of the photodiode is the output current of the capacitive element for contact measurement, as described above, how the reset operation is realized. There is an advantage that the above-mentioned inconvenience does not occur as compared with a form having an unsolved inconvenience such as how to solve the inconvenience that becomes significantly smaller than the above.

  The display device 2 can be used as a liquid crystal display device with a built-in touch panel. That is, according to the present embodiment, not only the pixel circuit 11 but also the light sensing circuit 81 and the capacitance sensing circuit 91 are arranged between the first substrate and the second substrate that sandwich the liquid crystal, so that the touch panel is provided outside the liquid crystal display panel. Compared to the configuration in which the device is disposed, the entire device can be made thinner.

<C: Third Embodiment>
FIG. 20 is a diagram schematically showing the characteristics of the display device 3 according to the third embodiment of the present invention. The display device 3 is significantly different from the display device 2 in that a display measurement region 300 is provided instead of the display measurement region 200. The row where the pixel circuits are arranged is the “display row”, the row where the optical sensing circuits are arranged is the “optical row”, the row where the capacitive sensing circuits are arranged is the “capacitance row”, and the row where the optical sensing circuits or capacitive sensing circuits are arranged is the “sensor row” In the display measurement region 200, display rows and sensor rows are alternately arranged one by one, whereas in the display measurement region 300, a large number of display rows and one sensor row are alternately arranged. A region where a large number of display rows are arranged is a display region A in the figure. In the display measurement region 200, the light rows and the capacitor rows are alternately arranged, whereas in the display measurement region 300, the light rows are arranged at a rate of 2 rows in 3 rows, and the rate of 1 row in 3 rows. The capacity row is arranged with. The region where the optical row is arranged is the optical region B in the drawing, and the region where the capacitance row is arranged is the capacitive region C in the drawing.

  As described above, the capacitance region is usually wider than the light region. Further, in the display device 3, as in the display device 2, the contact position is detected using not only the binarized capacitive image but also the binarized optical image, so that the specific accuracy of the capacitive region is reduced. However, the accuracy of specifying the final contact position hardly decreases as long as the accuracy of detecting the presence or absence of contact can be ensured. On the other hand, if the number of optical sensing circuits is increased by increasing the density of light lines on the contact surface, the accuracy of specifying the optical contact area increases, and thus the accuracy of specifying the final contact position increases. As described above, the present embodiment adopts the above configuration.

  In the present embodiment, the capacity rows are arranged at intervals of the diameter or minor axis of the contact range of the object in order to ensure the accuracy of detection of the presence or absence of contact. The diameter or minor axis of the contact range of the object varies depending on the object. For example, when the object is a human finger, the diameter of the contact range of the object is about 5 mm. In this case, if the pixel pitch is 0.1 mm, one capacity row is arranged for about 50 display rows. Of course, it is possible to adopt a configuration in which one capacity row is arranged for fewer display rows.

  According to this embodiment, the same effect as the second embodiment can be obtained. Moreover, according to this embodiment, the specific precision of a contact position improves. In addition, according to the present embodiment, the number of light rows is larger than the capacity rows, and the number of light sensing circuits is larger than the capacity sensing circuits. Therefore, the specific resolution of the contact position is improved as compared with other cases. The number of stages of the capacity shift register is preferably smaller than the number of stages of the optical shift register. For example, a sensing circuit having a plurality of capacitance sensing circuits each measuring a change in capacitance and outputting a capacitance measurement signal, and a plurality of optical sensing circuits each measuring the amount of incident light and outputting a light measurement signal As a contact position specifying method, a first step of sequentially scanning the plurality of capacitance sensing circuits to acquire a capacitance measurement signal, and whether or not an object has contacted the contact surface based on the acquired capacitance measurement signal. A second step of determining; a third step of sequentially scanning the plurality of optical sensing circuits to acquire an optical measurement signal after determining that the object has contacted in the second step; and the acquired light And a fourth step of specifying the position of the contact surface with which the object has come into contact based on the measurement signal, and it is determined that the object has come into contact with in the second step. In the case of adopting the method characterized by repeating the first step and the second step until the number of stages of the capacity shift register is smaller than the number of stages of the optical shift register, an electronic device including a sensing circuit ( For example, in the display device, consumption when repeating the first step of acquiring the capacitance measurement signal by controlling the capacitance shift register and the second step of determining whether or not the object is in contact with the contact surface Electric power can be reduced.

  In the present embodiment, the measurement scanning line drive circuit 20, the readout circuit 30, and the control circuit 550 in the display device 2 are changed and used. Changes that are not obvious from the above description may be determined as appropriate. As an example, the control circuit 550 may be changed so that the capacity image and the light image are binarized and combined after the resolution of the capacity image is made equal to the resolution of the light image by interpolation.

<D: Modification>
The present invention is not limited to the above-described embodiments, and for example, the following modifications are possible. Also, two or more of the modifications shown below can be combined.
The first embodiment is modified, and a backlight is provided on the back side of the measurement region 100. In the light sensing circuit 40, the amount of light emitted from the backlight and reflected by the object and incident on the photodiode 45 is mainly. It is good also as a structure measured by. In this configuration, as in the second embodiment, it is necessary to form both the first substrate and the second substrate with a light transmissive material such as glass.

  Each of the first and second embodiments is modified so that each of the plurality of measurement scanning lines 26 extends along one of the first substrate and the second substrate, and includes a plurality of sensors (unit circuits). Each may be arranged along one of the two substrates. Similarly, each of the n sense lines 35 may extend along one of the two substrates.

  In the second embodiment, a configuration is adopted in which the photodiode 86 and the contact measurement capacitive element 96 are not disposed in the vicinity of the pixel circuit 11 of the R pixel. However, the present invention is not limited to this. For example, a configuration may be adopted in which elements such as the amplification transistor 83 and the reference capacitance element 85 are arranged at other positions and the photodiode 86 and the contact measurement capacitance element 96 are arranged near the pixel circuit 11 of the R pixel. One optical sensing circuit (or capacitive sensing circuit) may have a configuration including one photodiode 86 (or capacitive element for contact measurement 96), or three optical sensing circuits (or capacitive sensing circuits). A configuration including the photodiode 86 (or the contact measuring capacitive element 96) may be employed.

  In the second embodiment, one sensor is arranged for the set of the pixel circuit 11 for the R pixel, the pixel circuit 11 for the G pixel, and the pixel circuit 11 for the B pixel. However, the present invention is not limited to this. For example, a sensor may be arranged for each pixel (dot), or one sensor may be arranged for a group of four or more pixels. As a display device for monochrome display Also good. Further, the second embodiment may be modified to be a so-called reflection type liquid crystal display device.

  In the second and third embodiments, the start time of the reset period Tres is always the start time of 1H, but this is modified so that the reset period Tres starts at a time different from the start time of 1H. Also good. According to this embodiment, the peak of current consumed by the display device can be suppressed.

  The third embodiment may be modified so that the ratio between the light row and the capacitance row is a ratio other than the above ratio. However, it is desirable that the ratio of light rows> the ratio of capacitance rows, that is, the number of optical sensing circuits> the number of capacitance sensing circuits. Further, the third embodiment may be modified so that the ratio between the display row and the sensor row is a ratio other than the above ratio. For example, as in the first embodiment and the second embodiment, display rows and sensor rows may be alternately arranged.

<E: Application example>
Next, an electronic apparatus using the display device 2 or 3 will be described.
FIG. 21 shows a configuration of a mobile personal computer to which the display device 2 or 3 is applied. The personal computer 2000 includes the display device 2 or 3 and a main body 2010. The main body 2010 is provided with a power switch 2001 and a keyboard 2002.

  FIG. 22 shows a configuration of a mobile phone to which the display device 2 or 3 is applied. The cellular phone 3000 includes a plurality of operation buttons 3001, scroll buttons 3002, and the display device 2 or 3. By operating the scroll button 3002, the screen displayed on the display device 2 or 3 is scrolled.

  FIG. 23 shows a configuration of a personal digital assistant (PDA) to which the display device 2 or 3 is applied. The information portable terminal 4000 includes a plurality of operation buttons 4001, a power switch 4002, and the display device 2 or 3. When the power switch 4002 is operated, various types of information such as an address book and a schedule book are displayed on the display device 2 or 3.

  In addition, as an electronic device to which the display device 2 or 3 is applied, in addition to those shown in FIGS. 21 to 23, a digital still camera, a television, a video camera, a car navigation device, a pager, an electronic notebook, electronic paper, a calculator, Other electronic devices used as a touch panel, such as a word processor, a workstation, a videophone, a POS terminal, a printer, a scanner, a copying machine, and a video player, can be mentioned. The sensing circuit 1 can also be applied to devices other than display devices.

1 is a block diagram showing a configuration of a sensing circuit 1 according to a first embodiment of the present invention. 2 is a circuit diagram illustrating a configuration of an optical sensing circuit 40 of the sensing circuit 1. FIG. 3 is a timing chart showing the operation of the optical sensing circuit 40. 6 is a diagram for explaining the operation of the optical sensing circuit 40. FIG. 6 is a diagram for explaining the operation of the optical sensing circuit 40. FIG. 6 is a diagram for explaining the operation of the optical sensing circuit 40. FIG. 2 is a circuit diagram illustrating a configuration of a capacitive sensing circuit 50 of the sensing circuit 1. FIG. 3 is a timing chart showing the operation of the capacitance sensing circuit 50. 6 is a diagram for explaining the operation of the capacitance sensing circuit 50. FIG. 6 is a diagram for explaining the operation of the capacitance sensing circuit 50. FIG. 6 is a diagram for explaining the operation of the capacitance sensing circuit 50. FIG. 3 is a timing chart showing the operation of the sensing circuit 1. It is a figure which shows typically an example of the optical image obtained with the sensing circuit. It is a figure which shows typically an example of the capacity | capacitance image obtained with the sensing circuit. It is a figure which shows typically an example of the binarized synthetic | combination image obtained with the sensing circuit. It is a block diagram which shows the structure of the display apparatus 2 which concerns on 2nd Embodiment of this invention. 3 is a circuit diagram showing a configuration of a unit circuit 80 of the display device 2. FIG. 3 is a circuit diagram illustrating a configuration of a unit circuit 90 of the display device 2. FIG. 4 is a timing chart showing the operation of the display device 2. It is a figure which shows typically the characteristic of the display apparatus 3 which concerns on 3rd Embodiment of this invention. FIG. 11 is a perspective view illustrating a configuration of a mobile personal computer to which the display device 2 or 3 is applied. It is a perspective view which shows the structure of the mobile telephone to which the display apparatus 2 or 3 is applied. It is a perspective view which shows the structure of the portable information terminal to which the display apparatus 2 or 3 is applied.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Sensing circuit, 2, 3 ... Display apparatus, 10 ... Display unit circuit, 11 ... Pixel circuit, 20 ... Measurement scanning line drive circuit, 25 ... Control line, 26 ... Measurement scanning line , 30... Readout circuit, 35... Sense line, 40, 81... Optical sensing circuit, 45, 86... Photodiode, 50, 91 .. capacitance sensing circuit, 55, 96. 56, 97... First electrode, 57, 98... Second electrode, 500, 550... Control circuit, 60... Display scanning line drive circuit, 65. Circuit, 75 ... Data line, 80, 90 ... Unit circuit, 100 ... Measurement area, 200, 300 ... Display measurement area.

Claims (8)

A first substrate and a second substrate facing each other;
A dielectric material sandwiched between the first substrate and the second substrate;
A plurality of scanning lines extending along the first substrate or the second substrate between the first substrate and the second substrate;
A plurality of capacitive sensing circuits and a plurality of optical sensing circuits arranged in a plane along the first substrate or the second substrate between the first substrate and the second substrate;
The optical sensing circuit is connected to the scanning line to which none of the plurality of capacitive sensing circuits is connected, and outputs an optical measurement signal having a magnitude corresponding to the amount of incident light,
The capacitive sensing circuit includes a capacitive element connected to the scanning line to which none of the plurality of optical sensing circuits is connected, and having the dielectric material, a first electrode, and a second electrode, and has a capacitance value of the capacitive element. Output the capacity measurement signal of the corresponding size,
Sensing circuit characterized by that. A plurality of sense lines extending along the first substrate or the second substrate between the first substrate and the second substrate;
The capacitive sensing circuit and the optical sensing circuit are connected to the sense line.
The sensing circuit according to claim 1. The optical sensing circuit is more than the capacitive sensing circuit,
The sensing circuit according to claim 1, wherein: A shift register for light to which the scanning lines connected to the plurality of light sensing circuits are connected;
A capacitance shift register to which the scanning lines connected to the plurality of capacitance sensing circuits are connected;
The number of stages of the capacity shift register is less than the number of stages of the optical shift register,
The sensing circuit according to claim 1, wherein: The sensing circuit according to any one of claims 1 to 4,
A plurality of pixel circuits arranged in a plane along the first substrate or the second substrate between the first substrate and the second substrate;
The pixel circuit includes the dielectric material;
The dielectric material is a liquid crystal;
A display device characterized by that. The sensing circuit according to any one of claims 1 to 4 or the display device according to claim 5 is provided.
An electronic device characterized by that. A driving method of the sensing circuit according to any one of claims 1 to 4,
A capacitive sensing process for driving the plurality of capacitive sensing circuits;
An optical sensing process for driving the plurality of optical sensing circuits,
Alternately performing the capacitive sensing process and the optical sensing process;
A method characterized by that. A driving method of a display device according to claim 5,
A display capacitance sensing process for driving the plurality of pixel circuits and the plurality of capacitance sensing circuits;
A display light sensing process for driving the plurality of pixel circuits and the plurality of light sensing circuits,
The display capacitance sensing process and the display light sensing process are alternately performed.
A method characterized by that.

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