JP2009270148A - Zr-Cr-Ti-O-BASED SPUTTERING TARGET FOR FORMING OXIDE FILM OF OPTICAL RECORDING MEDIUM - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a Zr-Cr-Ti-O-based sputtering target for forming an oxide film of an optical recording medium which can perform DC sputtering more efficiently than the conventional case. <P>SOLUTION: The sputtering target has a structure where a Ti<SB>2</SB>O<SB>3</SB>phase, a Ti<SB>2</SB>O<SB>3</SB>phase in which a Ti<SB>2</SB>O<SB>3</SB>phase and Cr are solid-soluted or a Ti<SB>2</SB>O<SB>3</SB>phase in which Cr is solid-soluted is dispersed into the base of a target having a componential composition composed of Zr<SB>q</SB>Cr<SB>r</SB>Ti<SB>m</SB>O<SB>100-q-r-m</SB>(wherein, 0<q<20, 5<r<30, 5<m<20, and 20<q+r+m<60). <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a Zr—Cr—Ti—O-based sputtering target for forming an oxide film of an optical recording medium, and particularly to Zr—Cr—Ti— for forming a first interface film in an optical recording medium. The present invention relates to an O-based sputtering target.

  The optical recording medium is a laminate in which a transparent substrate, a first protective film, a first interface film, a recording film, a second interface film, a second protective film, a reflective film, and a protective substrate are laminated in this order from the laser light incident side. It is configured. The first interface film is made of an oxide film containing an oxide of at least one element selected from Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, and Si. The first interface film is formed by sputtering in an inert gas atmosphere using a target made of the same component as the oxide film constituting the first interface film.

For example, in Patent Document 1, specific examples of the first interface film made of an oxide film containing this oxide include a Ta ₂ O ₅ film, a ZrO ₂ —Cr ₂ O ₃ film, and a ZrO ₂ —Cr ₂ film. Examples include an O ₃ —SiO ₂ film, and the Ta ₂ O ₅ film is formed by sputtering in an Ar gas atmosphere using a Ta ₂ O ₅ target, and the ZrO ₂ —Cr ₂ O ₃ film is Using a target having a component composition of ZrO ₂ : 70 mol% and Cr ₂ O ₃ : 30 mol%, a film was formed by sputtering in an Ar gas atmosphere, and the ZrO ₂ —Cr ₂ O ₃ —SiO ₂ film was formed from ZrO _{2. 2: 35mol%, Cr 2 O} 3: 30mol%, SiO 2: using a target having a component composition consisting of 35 mol%, the sputtering in an Ar gas atmosphere Have been described to be deposited by ring, _thus, the ZrO ₂ -Cr ₂ O 3 -TiO ₂ film _{Zr q Cr r Ti m O 100} -q-r-m ( although, 0 <q <20 It has been suggested that a film having a component composition of 5 <r <30, 5 <m <20, 20 <q + r + m <60) is formed by sputtering in an Ar gas atmosphere. Prepared ZrO ₂ powder, Cr ₂ O ₃ powder and TiO ₂ powder as raw material powder, and these raw material powders were Zr _q Cr _r Ti _m O _100-qr-m (where 0 <q <20, 5 < Mixing obtained by blending to have a component composition of r <30, 5 <m <20, 20 <q + r + m <60), and pulverizing and mixing to an average particle size of 1 μm or less using a wet pulverizer The powder can be dried, and the mixed powder can be filled into a carbon mold and hot-pressed in a vacuum atmosphere at a temperature of 1000 to 1300 ° C. and a pressure of 10 to 50 MPa.
JP 2003-338083 A

However, the conventional Zr—Cr—Ti—O-based sputtering target for forming the first interface film has a high specific resistance value. In particular, Zr _q Cr _r Ti _m O _100-qrm (however, 0 <Q <20, 5 <r <30, 5 <m <20, 20 <q + r + m <60) The target having a component composition has a high specific resistance value exceeding 10 Ω · cm, so that DC sputtering is efficiently performed. There was a problem that it was not possible.

Accordingly, the present inventors have conducted studies to develop a lower target has resistivity of component composition consisting of _{Zr q Cr r Ti m O 100} -q-r-m.
As a _{result, Zr q Cr r Ti m O} 100-q-r-m ( although, 0 <q <20,5 <r <30,5 <m <20,20 <q + r + m <60) having a component composition consisting of _Ti 2 _{O 3} phase in the material mixture of the target, _Ti 2 _{O 3} phase and Cr solid solution _Ti 2 _{O 3} phase (hereinafter, the _Ti 2 _{O 3} phase which Cr is solid-solved as "Cr solid solution _Ti 2 _{O 3} phase" ) Or a Zr—Cr—Ti—O-based target having a structure in which a Cr solid solution Ti ₂ O ₃ phase is uniformly dispersed has a specific resistance much lower than that of a conventional Zr—Cr—Ti—O-based target. The result of this research was obtained.

The present invention has been made based on such research results,
_{(1) Zr q Cr r Ti} m O 100-q-r-m ( although, 0 <q <20,5 <r <30,5 <m <20,20 <q + r + m <60) having a component composition consisting of A Zr—Cr—Ti—O-based sputtering target for forming an oxide film of an optical recording medium having a structure in which a Ti ₂ O ₃ phase is dispersed in a target substrate;
_{(2) Zr q Cr r Ti} m O 100-q-r-m ( although, 0 <q <20,5 <r <30,5 <m <20,20 <q + r + m <60) having a component composition consisting of A Zr—Cr—Ti—O-based sputtering target for forming an oxide film of an optical recording medium having a structure in which a Ti ₂ O ₃ phase and a Cr solid solution Ti ₂ O ₃ phase are dispersed in a target substrate It has characteristics.
_{(3) Zr q Cr r Ti} m O 100-q-r-m ( although, 0 <q <20,5 <r <30,5 <m <20,20 <q + r + m <60) having a component composition consisting of A Zr—Cr—Ti—O-based sputtering target for forming an oxide film of an optical recording medium having a structure in which a Cr solid solution Ti ₂ O ₃ phase is dispersed in a target substrate. .

In order to manufacture the Zr—Cr—Ti—O-based target of the present invention, ZrO ₂ powder, Cr ₂ O ₃ powder and Ti ₂ O ₃ powder are prepared as raw material powders, and these raw material powders are used as Zr _q Cr _r Ti. _m O _100-qr-m (where 0 <q <20, 5 <r <30, 5 <m <20, 20 <q + r + m <60) The mixed powder obtained by pulverizing and mixing to an average particle size of 1 μm or less using a powder is dried, and the mixed powder is filled in a carbon mold, and the temperature is 1000 to 1300 ° C. and the pressure is 10 to 50 MPa in a vacuum atmosphere. It is manufactured by hot pressing at When the hot press temperature is low, although the Zr-Cr-Ti-O based target of this invention obtained a tissue Ti ₂ O ₃ phase in the matrix is dispersed, the hot pressing temperature is higher, Ti ₂ O ₃ part of the powder in the solid solution state in _Cr 2 _{O 3} powder of Cr Cr solid solution _Ti 2 _{O 3} phase is generated in the matrix, the amount of Cr solid solution _Ti 2 _{O 3} phase hot pressing temperature The higher the temperature, the higher the hot press temperature, and the greater the Cr solid solution Ti ₂ O ₃ phase.

The Zr—Cr—Ti—O-based target of the present invention produced by this method is obtained by subjecting TiO ₂ having the same component composition as before by performing DC sputtering under normal conditions in an inert gas atmosphere containing oxygen or oxygen. A first interfacial film can be formed.

  Since the Zr—Cr—Ti—O-based sputtering target for forming an oxide film of the optical recording medium of the present invention has a lower specific resistance than the conventional one, DC sputtering can be performed more efficiently.

Next, the sputtering target for forming an oxide film of the optical recording medium of the present invention will be specifically described with reference to examples.
Example 1
As raw material powders, commercially available ZrO ₂ powder, Cr ₂ O ₃ powder, TiO ₂ powder and Ti ₂ O ₃ powder each having an average particle diameter of 2 μm were prepared.
These raw material powders were weighed so as to have the composition shown in Table 1 and wet mixed in a zirconia ball mill for 12 hours, and then the obtained mixed powder was filled in a carbon mold, and in a vacuum atmosphere, temperature: 1000 ° C., pressure A hot press body having a diameter of 160 mm × thickness: 7 mm was prepared by holding at 40 MPa for 2 hours, and this hot press body was cut and processed, each having a diameter of 152.4 mm × thickness: 5 mm Inventive targets 1 to 4 and conventional targets 1 to 4 having the composition shown in Table 1 having dimensions and having a structure in which the Ti ₂ O ₃ phase is uniformly dispersed in the substrate were produced.

  The specific resistances of these inventive targets 1 to 4 and conventional targets 1 to 4 were measured using a four-probe resistance measuring device Lorester (Mitsubishi Chemical), and the results are shown in Table 1.

From the results shown in Table 1, the target 1 of the present invention has a remarkably lower specific resistance than the conventional target 1, and therefore the target 1 of the present invention can perform DC sputtering more efficiently than the conventional target 1. Recognize. Similarly, since the present invention targets 2 to 4 have remarkably lower specific resistances than the conventional targets 2 to 4, the present invention targets 2 to 4 perform DC sputtering more efficiently than the conventional targets 2 to 4. You can see that

Example 2
As raw material powders, commercially available ZrO ₂ powder, Cr ₂ O ₃ powder, TiO ₂ powder and Ti ₂ O ₃ powder each having an average particle diameter of 2 μm were prepared.
These raw material powders are weighed so as to have the blending composition shown in Table 2, and wet mixed in a zirconia ball mill for 12 hours, and then the obtained mixed powder is filled into a carbon mold, and in a vacuum atmosphere, temperature: 1200 ° C., pressure A hot press body having a diameter of 160 mm × thickness: 7 mm was prepared by holding at 40 MPa for 2 hours, and this hot press body was cut and processed, each having a diameter of 152.4 mm × thickness: 5 mm The present invention targets 5 to 9 and the conventional target 5 having the composition shown in Table 2 having dimensions and having a structure in which the Ti ₂ O ₃ phase and the Cr solid solution Ti ₂ O ₃ phase are dispersed in the substrate. ~ 9 were made.

  Specific resistances of these inventive targets 5 to 9 and conventional targets 5 to 9 were measured using a four-probe resistance measuring device Lorestar (Mitsubishi Chemical), and the results are shown in Table 2.

From the results shown in Table 2, since the specific resistance of the target 5 of the present invention is much lower than that of the conventional target 5, the target 5 of the present invention can perform DC sputtering more efficiently than the conventional target 5. Recognize. Similarly, since the specific targets of the present invention targets 6-9 are remarkably lower than those of the conventional targets 6-9, the present invention targets 6-9 perform DC sputtering more efficiently than the conventional targets 6-9, respectively. You can see that it can be done.

Example 3
As raw material powders, commercially available ZrO ₂ powder, Cr ₂ O ₃ powder, TiO ₂ powder and Ti ₂ O ₃ powder each having an average particle diameter of 2 μm were prepared.
These raw material powders were weighed so as to have the composition shown in Table 3, and wet mixed in a zirconia ball mill for 12 hours, and then the obtained mixed powder was filled into a carbon mold, and in a vacuum atmosphere, temperature: 1300 ° C., pressure A hot press body having a diameter of 160 mm × thickness: 7 mm was prepared by holding at 40 MPa for 2 hours, and this hot press body was cut and processed, each having a diameter of 152.4 mm × thickness: 5 mm The present invention targets 10-12 having the composition shown in Table 3 having dimensions and having a structure in which the Cr solid solution Ti ₂ O ₃ phase is dispersed in the substrate and the Cr solid solution TiO ₂ phase are dispersed. Conventional targets 10 to 12 having a texture of the same structure were produced (when the hot press temperature reaches 1300 ° C., Cr is also dissolved in the TiO ₂ phase).

  The specific resistances of these inventive targets 10-12 and conventional targets 10-12 were measured using a four-probe resistance measuring device Lorestar (Mitsubishi Chemical), and the results are shown in Table 3.

From the results shown in Table 3, since the specific resistance of the target 10 of the present invention is much lower than that of the conventional target 10, the target 10 of the present invention can perform DC sputtering more efficiently than the conventional target 10. Recognize. Similarly, since the present invention targets 11 to 12 have remarkably lower specific resistance than the conventional targets 11 to 12, respectively, the present invention targets 11 to 12 are more efficiently DC sputtered than the conventional targets 11 to 12, respectively. It can be seen that can be done.

Claims (3)

_{Zr q Cr r Ti m O 100} -q-r-m ( although, 0 <q <20,5 <r <30,5 <m <20,20 <q + r + m <60) matrix of a target having a component composition consisting of A Zr—Cr—Ti—O-based sputtering target for forming an oxide film of an optical recording medium, which has a structure in which a Ti ₂ O ₃ phase is dispersed. _{Zr q Cr r Ti m O 100} -q-r-m ( although, 0 <q <20,5 <r <30,5 <m <20,20 <q + r + m <60) matrix of a target having a component composition consisting of during, _Ti 2 _{O 3} phase and the oxide film for film formation Zr-Cr-Ti-O system of an optical recording medium, characterized in that Cr has a _{tissue Ti} 2 _{O 3} phase solid solution is dispersed Sputtering target. _{Zr q Cr r Ti m O 100} -q-r-m ( although, 0 <q <20,5 <r <30,5 <m <20,20 <q + r + m <60) matrix of a target having a component composition consisting of A Zr—Cr—Ti—O-based sputtering target for forming an oxide film of an optical recording medium, characterized in that it has a structure in which a Ti ₂ O ₃ phase in which Cr is dissolved is dispersed.