JP2009259571A - Manufacturing device of organic electroluminescent device and method for manufacturing organic electroluminescent device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing device of an organic EL device and a method for manufacturing an organic EL device, for stabilizing plasma, controlling an irradiation volume so as not to damage an anode and irradiating plasma uniformly on the anode, in a process of irradiating plasma on the anode of the organic EL device. <P>SOLUTION: The manufacturing device S of the organic electroluminescent device, for irradiating plasma on the anode of the organic electroluminescent device equipped with an organic layer between the anode and a cathode, includes a processing room 1 where process gas is supplied, a substrate retention part 2 arranged inside the processing room 1 for retaining a substrate 202, plasma generating sources 4A, 4B irradiating the process gas in a plasma state on the substrate 202, and a shielding plate 5 with a plurality of openings arranged between the substrate 202 and the plasma generating source 4A. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to an organic electroluminescence device manufacturing apparatus and an organic electroluminescence device manufacturing method.

  In recent years, with the diversification of information equipment and the like, there is an increasing need for flat display devices that consume less power and are lighter. As one of such flat display devices, an organic EL device that displays an organic electroluminescence (hereinafter referred to as “organic EL”) element having an organic functional layer such as a light emitting layer or a hole transport layer is proposed. Yes.

As the structure of the organic EL device, an anode made of indium tin oxide (ITO), a hole injection layer for injecting holes of the anode into the organic layer, a light emitting layer, a cathode, A structure in which is stacked is known.
A typical ITO work function is about 4.9 eV. On the other hand, the work function of the organic material formed on the anode is approximately 5 eV, but there are organic materials having a work function of 5.2 eV or 5.3 eV. Therefore, there is an opening (difference) between the work function of the anode and the work function of the organic material, and an energy gap exists.

Therefore, in order to improve the hole injection property of injecting holes (holes) from the anode to the hole injection layer, and so that the work function of the anode and the work function of the hole injection layer show substantially the same value. In order to adjust, a plasma pretreatment process is known in which the work function of the anode is adjusted by exposing the surface of the anode made of ITO to a plasma process gas (see, for example, Patent Documents 1 to 6). In this plasma pretreatment process, the anode surface is also cleaned.
In such a plasma pretreatment step, the process gas is excited by applying high-frequency power to generate plasma of the process gas, and the anode is irradiated with the plasma. By performing such a plasma pretreatment step, the work function value of the anode surface is adjusted to 4.9 to 5.2 eV, and the hole injection property to the hole injection layer is enhanced. In addition to adjusting the work function on the anode surface, in the plasma pretreatment process, organic unnecessary substances adhering to the anode surface or particles adhering to the anode during substrate transport are removed.
JP-A-5-347188 JP-A-7-142168 JP 10-92585 A JP 2000-311869 A JP 2003-257646 A JP 2006-12039 A

However, Patent Documents 1 to 6 have a problem in that the anode is damaged when the intensity of plasma energy is high. Further, there is a problem that it is difficult to stably irradiate the substrate with plasma when the intensity of plasma energy is low.
Furthermore, since the process gas in the plasma state has a concentration distribution and a flow rate distribution, there is a problem that the plasma cannot be uniformly irradiated onto the substrate.

  The present invention has been made in view of the above-described circumstances, and in the step of irradiating the anode of the organic EL device with a process gas in a plasma state, irradiation is performed so that the plasma is stabilized and the anode is not damaged. An organic EL device manufacturing apparatus and an organic EL device manufacturing method capable of controlling the amount and uniformly irradiating plasma to an anode are provided.

The present inventor has found the following knowledge regarding the conventional plasma pretreatment process.
The plasma pretreatment process is a process in which energy is applied to the process gas using high-frequency power, a plasma state of the process gas is generated, and particles such as ions constituting the process gas collide with the anode surface. Therefore, if the intensity of plasma energy is increased, the process time can be shortened. However, if the intensity of plasma energy is increased, the anode surface made of ITO is damaged. Therefore, the problem that the film thickness of the anode becomes thin due to reverse sputtering, the problem that the members forming the pixels formed around the anode are scraped, and a desired pixel shape cannot be obtained, and the pixel configuration The member is scraped off to become particles, and the anode is contaminated by adhering to the anode surface.
On the other hand, in order to suppress damage to the anode surface, it is possible to consider a processing step in which plasma is generated with low high-frequency power, the intensity of plasma energy applied to the substrate is suppressed, and the irradiation time is lengthened. However, in this case, it is difficult to stabilize the plasma state of the process gas, and there is a problem that the amount of plasma irradiation on the substrate varies. As a result, there is a problem that the amount of irradiation irradiated to the substrate surface becomes non-uniform, it becomes difficult to clean the anode surface uniformly, and the work function value of the anode surface becomes non-uniform. Therefore, when irradiating the anode with plasma generated by low-frequency power, it is difficult to control the distribution of plasma energy intensity.
Further, as a method for controlling the plasma irradiation amount to the substrate, a method is known in which a magnetic field is generated around the generated plasma and the plasma irradiation amount is controlled by changing the magnetic field. However, when the substrate size is increased, the region for generating a magnetic field is increased in accordance with the substrate size. Therefore, it is difficult to make the plasma irradiation amount uniform with a simple apparatus.

Further, the plasma generated by the plasma pretreatment process is generated by exciting the process gas flowing into the processing chamber. Therefore, the concentration distribution and flow rate distribution of the process gas in the plasma state depend on the flow rate distribution or concentration distribution of the process gas supplied into the processing chamber. As a result, the amount of plasma irradiation varies depending on the flow rate or concentration of the supplied process gas, and the anode surface cleaning and anode work function adjustment cannot be performed uniformly. is there.
Further, when the substrate size is increased, it is conceivable to make the plasma irradiation distribution uniform over the entire surface of the substrate by increasing the number of supply paths for the process gas supplied to the processing chamber. However, even in this case, the supply amount of the process gas in the plasma state supplied to the central portion of the large substrate is smaller than the supply amount of the process gas in the plasma state supplied to the peripheral portion. There is a difference in the amount of process gas supplied between the portion and the peripheral portion. For this reason, when plasma is generated by exciting process gases with different supply amounts, the plasma irradiation amount at the central portion of the substrate and the plasma irradiation amount at the peripheral portion of the substrate are different. There is a problem that it is difficult to uniformly irradiate the anode on the substrate with the process gas.

Furthermore, the characteristics of plasma are not only due to variations in plasma energy intensity and process gas flow rate, but also due to factors such as the positional relationship between the process gas supply port and the plasma generation source in the processing chamber or the shape of the plasma generation source. It has a non-uniform distribution.
Therefore, in order to improve the element characteristics of the organic EL device, in particular, to uniformly clean the anode surface and adjust the work function, the anode surface is irradiated even if the generated plasma is non-uniform. It is necessary to make the plasma irradiation amount uniform.

In order to solve the above problems, the present inventor has found the following manufacturing apparatus and manufacturing method of an organic EL device.
That is, the organic EL device manufacturing apparatus of the present invention is an organic EL device manufacturing apparatus that irradiates plasma to the anode of an organic EL device having an organic layer between an anode and a cathode, and is supplied with a process gas. A processing chamber disposed in the processing chamber, holding a substrate, a plasma generation source for irradiating the substrate with the process gas in a plasma state, and between the substrate and the plasma generation source And a shielding plate having a plurality of openings.

According to the present invention, since the shielding plate having a plurality of openings is provided between the plasma generation source and the substrate, the process gas in the plasma state is shielded by the shielding plate and passes only through the plurality of openings. Only the process gas in the plasma state reaches the substrate and irradiates the substrate. Therefore, using a plurality of openings provided in the shielding plate, it is possible to restrict the collision of particles such as ions contained in the plasma process gas with the substrate surface. Even if the intensity of the plasma energy is increased so that the output of the plasma generation source is stable, the amount of plasma that reaches the substrate is limited by the shielding plate. The amount of plasma can be uniformly irradiated to the anode.
Even if the substrate size is increased, the dose to the substrate can be controlled as desired by appropriately setting the size of the shielding plate, the shape and number of openings, and the arrangement pattern.

In addition, according to the present invention, even when the flow rate or concentration of the process gas supplied into the processing chamber varies, the excited process gas is generated in the plurality of openings of the shielding plate. By passing through, the flow distribution or concentration distribution becomes uniform and reaches the substrate. Therefore, it is possible to make the irradiation amount of the plasma irradiated to the central portion of the substrate equal to the irradiation amount of the plasma irradiated to the peripheral portion of the substrate. That is, the plasma can be uniformly irradiated to the anode on the substrate.
In addition, when the number of process gas supply paths supplied to the processing chamber increases as the substrate size increases, there is a difference in the amount of process gas supplied between the central portion and the peripheral portion of the large substrate. There is. Even in such a case, since the flow rate distribution or concentration distribution of the plasma process gas is made uniform by the shielding plate, the amount of plasma irradiated to the central portion of the large substrate and the peripheral portion of the large substrate It can be made equal to the irradiation amount of the irradiated plasma.

  As described above, according to the manufacturing apparatus of the present invention, the amount of plasma irradiation is limited by the shielding plate, and plasma can be uniformly irradiated to the anode with a stable amount of irradiation. Further, the process gas can be irradiated to the substrate in a state where the flow rate distribution or concentration distribution of the plasma process gas is made uniform by the shielding plate. Therefore, cleaning of the anode surface and control of the work function on the anode surface can be performed uniformly while preventing contamination of the anode surface due to scraping of members constituting the pixels.

Moreover, in this invention, it is preferable that these opening parts are opening radially toward the peripheral part from the center part of the said shielding board. Moreover, it is preferable that the plurality of openings are formed radially at an equiangular pitch. Moreover, it is preferable that the width of each of the plurality of openings is formed so as to gradually increase from the central portion toward the peripheral portion of the shielding plate. In addition, it is preferable that the plurality of openings are formed so that the area of each of the plurality of openings gradually increases from the center to the periphery of the shielding plate.
With such a configuration, the amount of plasma irradiation is limited by the shielding plate, and plasma can be uniformly irradiated to the anode with a stable amount of irradiation. Further, the aperture ratio (opening area) of the shielding plate can be reduced in a portion where the concentration of the plasma process gas is high. Further, the aperture ratio of the shielding plate can be increased in a portion where the concentration is low. Therefore, the anode on the substrate can be irradiated with uniform and stable plasma.

In the present invention, it is preferable that the opening areas of the plurality of openings are all equal.
This configuration is effective in the case where the process gas concentration distribution and flow rate distribution do not affect the uniformity of plasma irradiation on the substrate and only improve the variation in the plasma energy intensity.
That is, with such a configuration, the intensity of the plasma energy is limited by the shielding plate having a plurality of openings having the same opening area, and plasma damage to the anode of the substrate is suppressed, so that the plasma can be produced with a stable dose. Can be uniformly irradiated to the anode.

In the present invention, it is preferable that the plurality of openings are formed so that the area of each of the plurality of openings gradually decreases from the central portion to the peripheral portion of the shielding plate. .
In this configuration, when the flow rate of the process gas supplied to the central portion of the substrate is smaller than the flow rate of the process gas supplied to the peripheral portion of the substrate, the distribution of the irradiation amount of the plasma applied to the entire surface of the substrate is obtained. It can be made uniform. Specifically, since the area of the opening formed in the peripheral portion of the shielding plate is small, the flow rate of the process gas in the plasma state is limited. Moreover, since the area of the opening part formed in the center part of the shielding board is large, the flow volume of the process gas in a plasma state increases. That is, the plurality of openings are formed so that the opening area gradually decreases from the central portion toward the peripheral portion of the shielding plate, so that the flow rate distribution of the process gas becomes uniform.
Accordingly, the plasma generated by exciting the process gas having a uniform flow rate distribution irradiates the substrate. Therefore, it is possible to make the plasma irradiation amount irradiated to the central portion of the substrate equal to the plasma irradiation amount irradiated to the peripheral portion. That is, the plasma can be uniformly irradiated to the anode on the substrate.
In particular, when the substrate size increases, a difference in the amount of process gas supplied tends to occur between the central portion and the peripheral portion of the large substrate. Even in this case, the plasma dose at the center of the substrate and the plasma dose at the periphery of the substrate can be made uniform. As a result, the substrate can be irradiated with uniform plasma.

Moreover, in this invention, it is preferable to provide the rotation mechanism which rotates the said shielding board. Alternatively, it is preferable that a rocking mechanism for rocking the shielding plate is provided.
When the shielding plate is fixed, the shielding plate and the substrate are brought close to each other, and the plasma process gas is passed through the opening of the shielding plate to irradiate the substrate with plasma, depending on the shape (pattern) of the opening of the shielding plate The anode film formed on the entire surface of the substrate may be exposed to plasma so that the shape of the opening is transferred. In this case, the variation of the plasma irradiation amount is not improved, and the substrate is irradiated nonuniformly.
Therefore, according to the present invention, by providing a rotation mechanism for rotating the shielding plate or a swinging mechanism for swinging the substrate, variation in plasma irradiation according to the shape of the opening provided in the shielding plate occurs. It can be suppressed, and the plasma irradiated onto the substrate can be made uniform.

The organic EL device manufacturing method of the present invention is a method for manufacturing an organic EL device in which plasma is applied to the anode of an organic EL device having an organic layer between an anode and a cathode, and the anode is disposed in a processing chamber. And a shielding plate having an opening between the substrate and a plasma generation source for irradiating the substrate with a process gas supplied into the processing chamber in a plasma state. And irradiating the substrate with the process gas in the plasma state.
In the manufacturing method of the present invention, the substrate is irradiated with a process gas in a plasma state using the above manufacturing apparatus. Therefore, in the step of irradiating plasma to the anode of the organic EL device, the plasma state of the process gas is stabilized, the amount of plasma irradiation is controlled so as not to damage the anode, and the plasma is uniformly applied to the anode. Can be irradiated. Therefore, cleaning of the anode surface and control of the work function on the anode surface can be performed uniformly while preventing contamination of the anode surface due to scraping of members constituting the pixels.

The present invention will be described below with reference to the drawings.
In all the drawings below, the film thicknesses and dimensional ratios of the components are appropriately changed in order to make the drawings easy to see.

(Plasma processing equipment)
FIG. 1 is a schematic diagram showing a configuration of a plasma processing apparatus (organic EL device manufacturing apparatus) according to an embodiment of the present invention. FIG. 2 is a plan view of a shielding plate provided in the plasma processing apparatus according to the embodiment of the present invention.

  As shown in FIG. 1, the plasma processing apparatus S of the present embodiment includes a vacuum chamber (processing chamber) 1 capable of supplying process gas, a substrate holding unit 2 disposed in the vacuum chamber 1, a shutter 3, and a pair of Electrodes (plasma generation sources) 4A and 4B, a shielding plate 5, an electromagnetic valve 6, a mass flow controller 7 and a vacuum gauge 8 provided outside the vacuum chamber 1 and communicating with the vacuum chamber 1 are provided.

  The substrate holding unit 2 holds the substrate 202 constituting the organic EL device. An anode made of ITO is formed on the substrate 202, and the substrate holder 2 holds the substrate 202 so that the anode faces the electrode 4A.

The mass flow controller 7 is connected to the process gas supply line 9 and controls the flow rate of the process gas supplied into the vacuum chamber 1.
The process gas supplied into the vacuum chamber 1 includes, for example, a processing gas such as oxygen (O ₂ ) and helium (He) for easily starting discharge and maintaining stable under a pressure near atmospheric pressure. , Argon (Ar), neon (Ne), xenon (Xe), and a rare gas such as krypton (Kr), or a mixed gas in which an inert gas such as nitrogen (N ₂ ) is mixed.

  The electromagnetic valve 6 is connected to a vacuum pump (not shown) through the vacuum exhaust line 10. Further, the electromagnetic valve 6 is electrically connected to the vacuum gauge 8, and the vacuum exhaust line is set so that the inside of the vacuum chamber 1 becomes a predetermined pressure according to the pressure inside the vacuum chamber 1 measured by the vacuum gauge 8. The flow path diameter (conductance) of 10 is adjusted, and the pressure in the vacuum chamber 1 is controlled.

  The shutter 3 is disposed between the shielding plate 5 and the substrate holder 2. The shutter 3 is connected to a shutter opening / closing mechanism 3A that opens and closes the shutter 3. When the shutter opening / closing mechanism 3A closes the shutter 3, the substrate 202 and the electrode 4A are isolated from each other, so that the substrate 2 is not irradiated with plasma. On the other hand, when the shutter opening / closing mechanism 3 </ b> A opens the shutter 3, the process gas plasma generated by the electrodes 4 </ b> A and 4 </ b> B is irradiated to the substrate 2 through the shielding plate 5.

The pair of electrodes 4A and 4B are connected to a high-frequency power source (not shown). The electrode 4A is disposed at the bottom of the plasma processing apparatus S so as to face the shielding plate 5. The electrode 4B is disposed so as to face the surface opposite to the surface on which the anode of the substrate 202 is formed. The electrode 4B and the substrate 202 may be in contact with each other or may not be in contact with each other.
When high-frequency power is supplied from the high-frequency power source to the electrodes 4A and 4B, the electrodes 4A and 4B generate plasma of process gas therebetween.
In this embodiment, the plasma processing apparatus S has a structure in which capacitively coupled plasma is generated by the parallel plate-type electrodes 4A and 4B. However, the structure is not limited, and the antenna is formed in a spiral shape. A structure for generating inductively coupled plasma may be provided.

The shielding plate 5 is disposed between the shutter 3 and the electrode 4A. In addition, a rotating mechanism 5 </ b> A that rotates the shielding plate 5 is connected to the shielding plate 5. The rotation mechanism 5 </ b> A has a function of rotating the shielding plate 5 in the direction indicated by the symbol R around the rotation center indicated by the symbol O in FIG. 2. The rotation center axis O is an axis parallel to the vertical direction of the substrate 202.
As shown in FIG. 2, the shielding plate 5 has a plurality of openings 5B. The plurality of openings 5B are slits that are opened radially from the central portion 5C of the shielding plate 5 toward the peripheral portion 5D. Further, the plurality of openings 5B are arranged at an equiangular pitch with the rotation center axis O as the center. Each of the plurality of openings 5B is formed so that the width increases from the central portion 5C of the shielding plate 5 toward the peripheral portion 5D.
As a material constituting the shielding plate 5, ceramics is preferably employed. Since the shielding plate 5 has a function of shielding plasma, it is preferable that the shielding plate 5 is not formed of a metal or a ferromagnetic material.

Next, the operation of the plasma processing apparatus S configured as described above will be described.
First, with the shutter 3 closed, a transfer device (not shown) arranges the substrate 202 in the vacuum chamber 1 (see FIG. 1).
On the surface of the substrate 202, an anode which is a component of an organic EL device made of ITO is formed. The substrate 202 is disposed in the vacuum chamber 1 so that the surface of the substrate 202 on which the anode is formed faces the shutter 3.

  In a state where the substrate 202 is disposed, the mass flow controller 7 supplies process gas from the process gas supply line 9 into the vacuum chamber 1. The mass flow controller 7 supplies a predetermined flow rate of process gas into the vacuum chamber 1. A pressure change in the vacuum chamber 1 due to the supply of the process gas is measured by a vacuum gauge 8. The electromagnetic valve 6 adjusts the flow path diameter (conductance) of the evacuation line 10 based on the difference between the pressure in the vacuum chamber 1 measured by the vacuum gauge 8 and the pressure required for plasma processing. The inside is controlled to a predetermined pressure.

When high frequency power is applied between the electrodes 4A and 4B after the process gas is supplied, plasma generated by exciting the process gas in the vacuum chamber 1 is generated. At this time, since the shutter 3 disposed between the substrate 202 and the electrode 4A is closed, plasma irradiation to the substrate 202 is not performed.
At this time, the distribution of the generated plasma is non-uniform. Specifically, plasma is generated while the intensity distribution of the plasma energy and the concentration distribution of the process gas in the plasma state are not uniform.

Next, the shutter opening / closing mechanism 3 </ b> A opens the shutter 3. Then, the plasma generated by the electrodes 4A and 4B is shielded by the shielding plate 5 and passes only through the plurality of openings 5B of the shielding plate 5 shown in FIG.
Here, the plasma in which the energy intensity distribution is non-uniform before passing through the opening 5B is shielded by the shielding plate 5, and the plasma having a uniform energy intensity distribution by passing through the opening 5B. become.
Further, the process gas in the plasma state in which the concentration distribution is non-uniform before passing through the opening 5B is shielded by the shielding plate 5 and passes through the opening 5B, so that the process gas has a uniform concentration distribution. become.
In particular, in the central portion 5 </ b> C having a small opening area (opening ratio) among the plurality of openings 5 </ b> B of the shielding plate 5, it is difficult for plasma to pass through the shielding plate 5. On the other hand, plasma easily passes through the shielding plate 5 in the peripheral portion 5D having a large opening area.
As described above, when the plasma process gas passes through the plurality of openings 5B of the shielding plate 5, the plasma energy intensity distribution becomes uniform, and the plasma process gas concentration distribution becomes uniform. Then, the process gas that has passed through the opening 5 </ b> B reaches the substrate 202.

  As described above, according to the plasma processing apparatus S of the present embodiment, the plasma process gas is passed through the plurality of openings 5 </ b> B provided in the shielding plate 5, whereby ions contained in the plasma process gas. And the like can be prevented from colliding with the substrate surface. Further, in order to stabilize the output of the plasma generated by the electrodes 4A and 4B, the amount of plasma irradiation to the substrate 202 is limited even when plasma with increased energy intensity is generated. Therefore, the substrate 202 on which the anode is formed can be uniformly irradiated with plasma while suppressing damage due to the plasma. Even if the substrate size is increased, the dose to the substrate can be controlled as desired by appropriately setting the size of the shielding plate 5, the shape and number of the openings 5B, and the arrangement pattern.

  As described above, according to the plasma processing apparatus S of the present embodiment, the anode formed on the substrate 202 of the organic EL device is uniformly irradiated with plasma in a state where the intensity of the plasma energy is limited. be able to. Therefore, cleaning of the anode surface and control of the work function on the anode surface can be performed uniformly while preventing contamination of the anode surface due to scraping of members constituting the pixels.

Further, the plasma processing apparatus S of the present embodiment includes a rotation mechanism 5 </ b> A that rotates the shielding plate 5. Therefore, it is possible to suppress the occurrence of variations in plasma irradiation according to the shape of the opening 5B provided in the shielding plate 5, and to achieve uniform plasma applied to the substrate 202.
In this embodiment, the rotation mechanism 5A is provided to rotate the shielding plate 5. However, if the shielding plate 5 and the substrate 202 are sufficiently separated from each other, that is, the opening 5B of the shielding plate 5. If the shape is separated to the extent that it is not transferred to the substrate 202, it is not necessary to rotate the shielding plate 5 by the rotating mechanism 5A, and the shielding plate 5 may be fixed.

In the present embodiment, the plurality of openings 5B are opened radially from the central portion 5C of the shielding plate 5 toward the peripheral portion 5D, and the width increases from the central portion 5C toward the peripheral portion 5D. Is formed.
With such a configuration, even if plasma with increased energy intensity is generated so that the plasma state generated in the electrodes 4A and 4B is stabilized, the amount of plasma irradiation reaching the substrate 202 is limited. The Therefore, the substrate 202 can be uniformly irradiated with plasma whose energy intensity is limited.

(Modification 1 of shielding plate)
FIG. 3 is a plan view showing a modification of the shielding plate.
In the present embodiment, as shown in FIG. 2, a shape in which a plurality of slits are provided radially is employed as the planar shape of the opening 5 </ b> B of the shielding plate 5. Further, the rotation mechanism 5A rotates the shielding plate 5 around the rotation center axis O.

In this modification, as shown in FIG. 3, a plurality of circular openings 5B are formed in the shielding plate 5 ′. Further, the diameter of the opening 5B is small (the opening area is small) in the central portion 5C of the shielding plate 5 ′, and the diameter of the opening 5B is large (the opening area is large) in the peripheral portion 5D of the shielding plate 5. Further, the openings 5B of the shielding plate 5 ′ are formed at an equiangular pitch with the rotation center axis O as the center. Further, the area of each of the openings 5B gradually increases from the central part 5C to the peripheral part 5D of the shielding plate 5 ′.
Thus, even when a plurality of circular openings 5B as shown in FIG. 3 are formed in the shielding plate 5 ′, the same effect as in the above embodiment can be obtained.

Further, the shielding plate 5 ′ of this modification is connected to a swing mechanism 5E that swings the shield plate 5 ′. The oscillating device 5E reciprocally oscillates the shielding plate 5 ′ around the rotation center axis O as indicated by a symbol R ′ in FIG.
Therefore, it is possible to suppress the occurrence of variations in the plasma irradiation according to the shape of the opening 5B provided in the shielding plate 5 ′, and the plasma irradiated onto the substrate 202 can be made uniform.
The direction in which the swing mechanism 5E swings the shielding plate 5 ′ is not limited to the direction indicated by the symbol R ′, but the swing direction indicated by the symbol XX ′ in FIG. 3 or the symbol YY ′. The shielding plate 5 ′ may be swung in the swing direction indicated by the direction.

  In the above-described embodiment and modification, the mechanism for rotating or swinging the shielding plates 5 and 5 ′ has been described. However, the plasma processing apparatus S may include a substrate rotation mechanism for rotating the substrate 202.

(Modification 2 of shielding plate)
In the embodiment and the modification 1 shown in FIGS. 2 and 3 above, the configuration in which the width of the slit gradually increases from the central portion 5C toward the peripheral portion 5D, and the configuration in which the area of the opening gradually increases. showed that.
In the present modification, the opening areas of the plurality of openings 5B are all equal.
This modification is effective when the process gas concentration distribution and flow rate distribution do not affect the uniformity of plasma irradiation on the substrate 202 and only improve the variation in plasma energy intensity.
That is, with such a configuration, the intensity of plasma energy is limited by the shielding plate 5 having a plurality of openings 5B having the same opening area, and plasma damage to the anode of the substrate 202 is suppressed, so that stable irradiation is possible. The amount of plasma can be uniformly irradiated to the anode.

(Modification 3 of shielding plate)
In the present modification, although not shown, the opening 5B is formed in the shielding plate 5 so that the opening area of the plurality of openings 5B gradually decreases from the central portion 5C to the peripheral portion 5D of the shielding plate 5. Has been.
In this configuration, when the flow rate of the process gas supplied to the central portion 5C of the substrate 202 is smaller than the flow rate of the process gas supplied to the peripheral portion 5D of the substrate 202, the plasma irradiated onto the entire surface of the substrate 202 is obtained. The distribution of irradiation dose can be made uniform. Specifically, since the area of the opening 5B formed in the peripheral part 5D of the shielding plate 5 is small, the flow rate of the process gas in the plasma state is limited. Further, since the area of the opening 5B formed in the central portion 5C of the shielding plate 5 is large, the flow rate of the process gas in the plasma state increases. That is, the plurality of openings 5B are formed so that the opening area gradually decreases from the central part 5C to the peripheral part 5D of the shielding plate 5, so that the flow rate distribution of the process gas becomes uniform.
Accordingly, the plasma generated by exciting the process gas having a uniform flow rate distribution irradiates the substrate 202. Therefore, the amount of plasma irradiated to the central portion of the substrate 202 can be made equal to the amount of plasma irradiated to the peripheral portion thereof. That is, plasma can be uniformly irradiated to the anode on the substrate 202.
In particular, when the substrate size increases, a difference in the amount of process gas supplied tends to occur between the central portion and the peripheral portion of the large substrate. Even in this case, the plasma dose at the center of the substrate and the plasma dose at the periphery of the substrate can be made uniform. As a result, the substrate can be irradiated with uniform plasma.

  In addition, the shape, arrangement | positioning, and pattern of the some opening part 5B formed in the shielding board 5 are not limited to the structure shown by the said embodiment and Examples 1-3. A plurality of openings having shapes, arrangements, and patterns obtained by combining the configurations of the openings described above may be formed in the shielding plate 5. In addition, the shape, arrangement, and pattern of the plurality of openings 5B are appropriately set so that the flow rate distribution or concentration distribution of the process gas in the plasma state irradiated onto the substrate 202 and the intensity distribution of the plasma energy are uniform. It is determined.

(Method for manufacturing organic EL device)
Next, the manufacturing method of the organic EL device of the present invention will be described.
The method for manufacturing an organic EL device of the present invention includes the steps of uniformly cleaning the anode surface and controlling the work function on the anode surface using the plasma processing apparatus S described above.

(Organic EL device)
First, the structure of the organic EL device manufactured by the manufacturing method of the present invention will be described.
FIG. 4 is an enlarged view of the cross-sectional structure of the display area in the organic EL device.
The organic EL device shown in FIG. 4 is an active matrix organic EL device in which a thin film transistor (TFT) is arranged for each pixel. The TFT is provided over the substrate 20202. The organic EL device of this embodiment is a back emission type that extracts light through the substrate 202.

As shown in FIG. 4, the organic EL device E includes a substrate 202, a light emitting element (organic layer) 203 provided on the substrate 202, and a TFT 204.
The light emitting element 203 includes a pixel electrode (anode) 223 made of a transparent conductive film material such as ITO, a hole transport layer 270 capable of transporting holes from the pixel electrode 223, an organic light emitting layer 260 containing an organic light emitting material, The electron transport layer 250 provided on the top surface of the light emitting layer 260 and the aluminum (Al), magnesium (Mg), gold (Au), silver (Ag), calcium (Ca) provided on the top surface of the electron transport layer 250. ) Or the like.

The TFT 204 is provided on the surface of the substrate 202 through a base protective layer 281 mainly composed of SiO ₂ .
The TFT 204 includes a silicon layer 241 formed over the base protective layer 281, a gate insulating layer 282 provided over the base protective layer 281 so as to cover the silicon layer 241, and an upper surface of the gate insulating layer 282. A gate electrode 242 provided in a portion facing the silicon layer 241; a first interlayer insulating layer 283 provided above the gate insulating layer 282 so as to cover the gate electrode 242; a gate insulating layer 282 and a first interlayer insulating layer A source electrode 243 connected to the silicon layer 241 through a contact hole opened over the layer 283, and a position facing the source electrode 243 with the gate electrode 242 interposed therebetween. The gate insulating layer 282 and the first interlayer insulating layer 283 are provided. A drain electrode 244 connected to the silicon layer 241 through a contact hole opened over the And a second interlayer insulating layer 284 provided on an upper layer of the first interlayer insulating layer 283 to cover the over scan electrode 243 and the drain electrode 244.

  A pixel electrode 223 is disposed on the upper surface of the second interlayer insulating layer 284. The pixel electrode 223 and the drain electrode 244 are connected via a contact hole 223 a provided in the second interlayer insulating layer 284. A bank layer 221 made of a synthetic resin or the like is provided between a portion of the surface of the second interlayer insulating layer 284 other than the light emitting element (organic layer) provided and the counter electrode 222.

  Note that a region of the silicon layer 241 that overlaps with the gate electrode 242 with the gate insulating layer 282 interposed therebetween is a channel region. In the silicon layer 241, a source region is provided on the source side of the channel region, and a drain region is provided on the drain side of the channel region. Among these, the source region is connected to the source electrode 243 through a contact hole that opens over the gate insulating layer 282 and the first interlayer insulating layer 283. On the other hand, the drain region is connected to the drain electrode 244 made of the same layer as the source electrode 243 through a contact hole that extends through the gate insulating layer 282 and the first interlayer insulating layer 283. The pixel electrode 23 is connected to the drain region of the silicon layer 241 through the drain electrode 244.

  Since the organic EL device E of the present embodiment has a configuration in which emitted light is extracted from the side of the substrate 202 on which the TFT 204 is provided, the substrate 202 is preferably transparent. As a substrate material in this case, glass, quartz, A highly transparent (high transmittance) or translucent material such as a resin is used. In addition, a color filter film, a color conversion film containing a luminescent substance, or a dielectric reflection film may be disposed on the substrate to control the emission color.

  Note that a so-called top emission type in which emitted light of the light emitting layer is extracted from a substrate opposite to the substrate on which the TFT is provided can be employed. In the case of the top emission type, the substrate 202 may be opaque. In this case, a ceramic sheet such as alumina, a metal sheet such as stainless steel that has been subjected to an insulation treatment such as surface oxidation, a thermosetting resin, a thermoplastic resin, etc. Can be used.

Next, the manufacturing process of the organic EL device E, which is the manufacturing method of the present invention, will be described with reference to FIGS.
First, a silicon layer 241 is formed on the substrate 202. When the silicon layer 241 is formed, first, as shown in FIG. 5A, a thickness of about 200 to 500 nm is formed on the surface of the substrate 202 by plasma CVD using TEOS (tetraethoxysilane), oxygen gas, or the like as a raw material. A base protective layer 281 made of a silicon oxide film is formed.

Next, as shown in FIG. 5B, the temperature of the substrate 202 is set to about 350 ° C., and an amorphous silicon film having a thickness of about 30 to 70 nm is formed on the surface of the base protective film 281 by plasma CVD or ICVD. A semiconductor layer 241A made of is formed. Next, a crystallization step is performed on the semiconductor layer 241A by a laser annealing method, a rapid heating method, a solid phase growth method, or the like to crystallize the semiconductor layer 241A into a polysilicon layer. In the laser annealing method, for example, a line beam having a beam length of 400 mm is used with an excimer laser, and the output intensity is set to 200 mJ / cm ² , for example. For the line beam, the line beam is scanned so that a portion corresponding to 90% of the peak value of the laser intensity in the short dimension direction overlaps each region.

  Next, as shown in FIG. 5C, the semiconductor layer (polysilicon layer) 241A is patterned to form an island-shaped silicon layer 241, and the surface is formed by plasma CVD using TEOS, oxidizing gas, or the like as a raw material. A gate insulating layer 282 made of a silicon oxide film or nitride film having a thickness of about 60 to 150 nm is formed.

Note that hydrogen (H ₂ ) plasma treatment may be performed on the surface of the gate insulating layer 282. Thereby, dangling bonds in Si—O bonds on the surface of the voids are replaced with Si—H bonds, and the moisture absorption resistance of the film is improved. Then, another SiO ₂ layer may be provided on the surface of the plasma-treated gate insulating layer 282. By doing so, an insulating layer having a dielectric constant can be formed.

  Next, as shown in FIG. 5D, a conductive film containing a metal such as aluminum, tantalum, molybdenum, titanium, or tungsten is formed on the gate insulating layer 282 by sputtering, and then patterned to form a gate. An electrode 242 is formed. Next, phosphorus ions at a high concentration are implanted in this state, and a source region 241 s and a drain region 241 d are formed in the silicon layer 241 in a self-aligned manner with respect to the gate electrode 242. In this case, the gate electrode 242 is used as a patterning mask. Note that a portion where no impurity is supplied becomes a channel region 241c.

  Next, as shown in FIG. 5E, a first interlayer insulating layer 283 is formed. The first interlayer insulating layer 283 is formed of a silicon oxide film or a nitride film, a porous silicon oxide film, or the like, like the gate insulating layer 282, and the gate insulating layer is formed in the same procedure as the method for forming the gate insulating layer 282. It is formed in the upper layer of 282. Then, by patterning the first interlayer insulating layer 283 and the gate insulating layer 282 using a photolithography method, contact holes corresponding to the source electrode and the drain electrode are formed. Next, after forming a conductive layer made of a metal such as aluminum, chromium, or tantalum so as to cover the first interlayer insulating layer 283, the conductive layer covers a region where the source electrode and the drain electrode are to be formed. A source mask 243 and a drain electrode 244 are formed by patterning a mask and patterning the conductive layer. Next, although not shown, a signal line, a common power supply line, and a scanning line are formed on the first interlayer insulating layer 283. At this time, since the portion surrounded by these is a pixel that forms a light emitting layer or the like as will be described later, for example, in the case where the emitted light is extracted from the substrate side, the portion where the TFT 204 is surrounded by each wiring. Each wiring is formed so as not to be located directly under the line.

  Next, as shown in FIG. 6A, a second interlayer insulating layer 284 is formed so as to cover the first interlayer insulating layer 283, the electrodes 243, 244, and the wirings (not shown). Similar to the first interlayer insulating layer 283, the second interlayer insulating layer 284 is composed of a silicon oxide film, a nitride film, or the like, and the first interlayer insulating layer 283 is formed in the same procedure as the method for forming the first interlayer insulating layer 283. It is formed in the upper layer. When the second interlayer insulating layer 284 is formed, a contact hole 223a is formed in a portion corresponding to the drain electrode 244 in the second interlayer insulating layer 284. Then, a pixel electrode 223 is formed by patterning a conductive material such as ITO so as to be continuous with the drain electrode 244 through the contact hole 223a.

  The pixel electrode 223 is made of a transparent conductive film material made of ITO, and is connected to the drain electrode 244 of the TFT 204 through the contact hole 223a. In order to form the pixel electrode 223, a film made of a transparent conductive film material is formed on the upper surface of the second interlayer insulating layer 284, and this film is patterned.

After the pixel electrode 23 is formed, a bank layer 221 is formed so as to cover a predetermined position of the second interlayer insulating layer 284 and a part of the pixel electrode 223, as shown in FIG. 6B. The bank layer 221 is made of a synthetic resin such as an acrylic resin or a polyimide resin. As a specific method for forming the bank layer 221, for example, an insulating layer is formed by applying a resist such as acrylic resin, polyimide resin, or a precursor thereof melted in a solvent by spin coating, dip coating, or the like. It is formed.
The constituent material of the insulating layer may be any material as long as it does not dissolve in the ink solvent described below and can be easily patterned by etching or the like. Furthermore, the insulating layer is simultaneously etched by a photolithography technique or the like to form the opening 221a, whereby the bank layer 221 having the opening 221a is formed.

(Plasma treatment process)
When the pixel electrode 223 and the bank unit 221 are formed, a plasma processing process using the plasma processing apparatus S described in the above embodiment is performed.
That is, as shown in FIG. 6B, the plasma processing step is performed on the substrate 202 in a state where the bank layer 221 and the pixel electrode 223 among the various wirings and members formed on the substrate 202 are exposed. It is.
The plasma treatment process is performed to adjust the work function of the surface of the pixel electrode 223 and to clean the surface of the pixel electrode 223. The adjustment of the work function will be described in detail. In order to improve the hole injection property when holes are injected from the pixel electrode 223 into the hole injection layer, the work function of the pixel electrode 223 and the hole injection layer ( This is performed in order to adjust the difference from the work function of the hole transport layer) and to enhance the hole injection property to the hole injection layer. Further, in the plasma treatment process of the present embodiment, the surface treatment for the bank portion 221 is performed simultaneously.

Before starting the plasma processing step, the substrate 202 on which the bank layer 221 and the pixel electrode 223 are formed is disposed in the plasma processing apparatus S. Here, as shown in FIG. 1, the substrate 202 is disposed so that the pixel electrode 223 faces the electrode 4A.
Next, as described for the operation of the plasma processing apparatus S in the above embodiment, the shielding plate 5 having the opening 5B is interposed between the electrode 4A that is a plasma generation source and the substrate 202, and the shielding plate 5 is attached. The substrate 202 is irradiated with a process gas in a plasma state. Here, the amount of plasma irradiation is limited by the shielding plate 5, and only the plasma that has passed through only the opening 5B reaches the substrate 202, and the bank layer 221 and the pixel electrode 223 are exposed to the plasma.
Accordingly, since the plasma can be uniformly irradiated in a state where the intensity of the plasma energy is limited, contamination of the surface of the pixel electrode 223 caused by the removal of a member constituting the pixel, for example, the bank layer 221. The surface of the pixel electrode 223 can be cleaned and the work function on the surface of the pixel electrode 223 can be controlled uniformly.

In the plasma processing step of this embodiment, cleaning of the surface of the pixel electrode 223 and control of the work function on the surface of the pixel electrode 223 are mainly performed, but the surface of the pixel electrode 223 and the surface of the bank layer 221 are not affected. A lyophilic treatment may be included.
Further, as described above, after the plasma processing step by the plasma processing apparatus S is completed, a lyophilic process on the surface of the pixel electrode 223 and a lyophobic process on the surface of the bank unit 221 may be performed as appropriate.

  Next, as illustrated in FIG. 6C, the hole transport layer 270 is formed on the upper surface of the pixel electrode 223. Here, the material for forming the hole transport layer 270 is not particularly limited, and known materials can be used, and examples thereof include pyrazoline derivatives, arylamine derivatives, stilbene derivatives, and triphenyldiamine derivatives. Specifically, JP-A-63-70257, JP-A-63-175860, JP-A-2-135359, JP-A-2-135361, JP-A-2-209998, JP-A-3-37992, and JP-A-3-152184. Examples described in the publication are exemplified, but a triphenyldiamine derivative is preferable, and 4,4′-bis (N (3-methylphenyl) -N-phenylamino) biphenyl is particularly preferable.

  Note that a hole injection layer may be formed instead of the hole transport layer, and both the hole injection layer and the hole transport layer may be formed. In that case, as a material for forming the hole injection layer, polythiophene derivatives such as copper phthalocyanine (CuPc), polyphenylene vinylene which is polytetrahydrothiophenylphenylene, 1,1-bis- (4-N, N-ditolylamino) are used. Phenyl) cyclohexane, tris (8-hydroxyquinolinol) aluminum and the like can be mentioned, and it is particularly preferable to use copper phthalocyanine (CuPc).

  When the hole injection / transport layer 270 is formed, an ink jet method (droplet discharge method) is used. That is, after ejecting a composition droplet (composition ink) containing the above-described hole injection / transport layer material onto the electrode surface of the pixel electrode 223, a drying process and a heat treatment are performed, whereby holes are formed on the pixel electrode 223. An injection / transport layer 270 is formed. In addition, it is preferable to carry out after this hole injection / transport layer formation process in inert gas atmosphere, such as nitrogen atmosphere and argon atmosphere, in order to prevent the oxidation of the hole injection / transport layer 270 and the light emitting layer 260. Specifically, for example, a composition ink containing a hole injection / transport layer material is filled in an unillustrated inkjet head (droplet ejection head), and the ejection nozzle of the inkjet head faces the electrode surface of the pixel electrode 223. While the ink jet head and the sample (substrate 202) are moved relative to each other, ink droplets whose liquid amount per droplet is controlled are ejected from the ejection nozzle onto the electrode surface. Next, the hole injection / transport layer 270 is formed by drying the ejected ink droplets to evaporate the polar solvent contained in the composition ink.

  As the composition ink, for example, a mixture of a polythiophene derivative such as polyethylenedioxythiophene and polystyrenesulfonic acid or the like dispersed in a polar solvent such as N-methylpyrrolidone or isopropyl alcohol can be used. . Here, the ejected ink droplet spreads on the electrode surface of the pixel electrode 223 that has been subjected to the parent ink treatment, and is filled near the bottom of the opening 221a. On the other hand, ink droplets are repelled and do not adhere to the upper surface of the bank layer 221 that has been subjected to ink repellent treatment. Therefore, even if the ink droplets deviate from the predetermined ejection position and are ejected onto the upper surface of the bank layer 221, the upper surface does not get wet with the ink droplets, and the repelled ink droplets enter the opening 221a of the bank layer 221. It is supposed to roll in.

  Next, a drying process is performed. By performing the drying process, the discharged composition ink is dried, and the polar solvent contained in the composition ink is evaporated, whereby the hole injection / transport layer 270 is formed.

  The drying treatment is performed, for example, in a nitrogen atmosphere at room temperature to about 50 ° C. and a pressure of about 13.3 Pa (0.1 Torr), for example. If the pressure is too low, the composition ink will boil, which is not preferable. On the other hand, when the temperature is higher than room temperature, for example, 80 ° C. or higher, the evaporation rate of the polar solvent increases and a flat film cannot be formed. After the drying treatment, it is preferable to remove the polar solvent and water remaining in the hole injecting / transporting layer 270 by performing a heat treatment in nitrogen, preferably in a vacuum, at 200 ° C. for about 10 minutes.

  Next, as shown in FIG. 6D, the light emitting layer 260 is formed on the upper surface of the hole injection / transport layer 270. The material for forming the light emitting layer 260 is not particularly limited, and examples thereof include polyfluorene derivatives, polyphenylene derivatives, polyvinyl carbazole, polythiophene derivatives, or polymer materials such as perylene dyes, coumarin dyes, rhodamine dyes such as rubrene. Perylene, 9,10-diphenylanthracene, tetraphenylbutadiene, Nile red, coumarin 6, quinacridone and the like can be used.

  The light emitting layer 260 is formed in the same procedure as the method for forming the hole injection / transport layer 270. That is, the composition ink containing the light emitting layer material is ejected onto the upper surface of the hole injection / transport layer 270 by an inkjet method, and then subjected to a drying process and a heat treatment, thereby performing positive processing inside the opening 221a formed in the bank layer 221. A light emitting layer 260 is formed on the hole injection / transport layer 270. This light emitting layer forming step is also performed in an inert gas atmosphere as described above. Since the ejected composition droplets (composition ink, liquid material) are repelled in the liquid-repellent treated region, the repelled droplet droplets remain in the bank layer 221 even if the droplet droplets deviate from a predetermined ejection position. Roll into the opening 221a. When a composition ink containing a material for forming the light emitting layer 260 is provided, a drying process is performed under predetermined conditions.

  Note that the electron-transporting layer 250 may be formed on the top surface of the light-emitting layer 260. The material for forming the electron transport layer 250 is not particularly limited, and is an oxadiazole derivative, anthraquinodimethane and its derivative, benzoquinone and its derivative, naphthoquinone and its derivative, anthraquinone and its derivative, tetracyanoanthraquinodi. Examples include methane and its derivatives, fluorenone derivatives, diphenyldicyanoethylene and its derivatives, diphenoquinone derivatives, metal complexes of 8-hydroxyquinoline and its derivatives, and the like. Specifically, as with the material for forming the hole transport layer, JP-A-63-70257, JP-A-63-175860, JP-A-2-135359, JP-A-2-135361, and JP-A-2-209888 are disclosed. And the like described in JP-A-3-379992 and 3-152184, particularly 2- (4-biphenylyl) -5- (4-t-butylphenyl) -1,3,4. -Oxadiazole, benzoquinone, anthraquinone, tris (8-quinolinol) aluminum are preferred.

  Note that the hole injection / transport layer 270 formation material and the electron transport layer 250 formation material described above may be mixed with the light emission layer 260 formation material and used as the light emission layer formation material. Although the amount of the injection / transport layer forming material and the electron transport layer forming material used varies depending on the type of compound used, etc., it is appropriately determined in consideration of the amount within a range that does not impair sufficient film formability and light emission characteristics. Is done. Usually, it is 1 to 40 weight% with respect to the light emitting layer forming material, More preferably, it is 2 to 30 weight%.

  Next, as illustrated in FIG. 6E, the counter electrode 222 is formed on the upper surfaces of the electron transport layer 250 and the bank layer 221. The counter electrode 222 is formed in the whole surface of the electron carrying layer 250 and the bank layer 221, or stripe shape. Of course, the counter electrode 222 may be formed of a single layer made of a single material such as Al, Mg, Li, or Ca, or an alloy material of Mg: Ag (10: 1 alloy). It may be formed as a metal (including alloy) layer. Specifically, a layered structure such as Li 2 O (about 0.5 nm) / Al, LiF (about 0.1 to 2 nm) / Al, or MgF 2 / Al can be used. The counter electrode 222 is a thin film made of the above-described metal and has a material and a structure capable of transmitting light.

(Electronics)
Examples of electronic devices provided with the organic EL device of the above embodiment will be described.
FIG. 7 is a perspective view showing an example of a mobile phone.
In FIG. 7, reference numeral 1000 denotes a mobile phone body, and reference numeral 1001 denotes a display unit using the organic EL device.

FIG. 8 is a perspective view showing an example of a wristwatch type electronic apparatus.
In FIG. 8, reference numeral 1100 denotes a watch body, and reference numeral 1101 denotes a display unit using the organic EL device.

FIG. 9 is a perspective view showing an example of a portable information processing apparatus such as a word processor or a personal computer.
In FIG. 9, reference numeral 1200 denotes an information processing apparatus, reference numeral 1202 denotes an input unit such as a keyboard, reference numeral 1204 denotes an information processing apparatus body, and reference numeral 1206 denotes a display unit using the organic EL device.

  Since the electronic devices shown in FIGS. 7 to 9 include the organic EL device according to the above-described embodiment, an electronic device having an excellent display quality and a bright screen organic EL display unit can be realized.

  As mentioned above, although embodiment of this invention was described in detail, this invention can be implemented by adding various deformation | transformation and change to the said Example within the technical scope.

It is the schematic which shows the structure of the plasma processing apparatus which concerns on embodiment of this invention. It is a top view of the shielding board with which the plasma processing apparatus concerning the embodiment of the present invention is provided. It is a top view which shows the modification of the shielding board with which the plasma processing apparatus which concerns on embodiment of this invention is provided. It is sectional drawing which shows the structure of the organic electroluminescent apparatus of embodiment of this invention. It is sectional drawing for demonstrating the manufacturing method of the organic electroluminescent apparatus of this invention. It is sectional drawing for demonstrating the manufacturing method of the organic electroluminescent apparatus of this invention. It is a perspective view which shows the electronic device provided with the organic electroluminescent apparatus of embodiment of this invention. It is a perspective view which shows the electronic device provided with the organic electroluminescent apparatus of embodiment of this invention. It is a perspective view which shows the electronic device provided with the organic electroluminescent apparatus of embodiment of this invention.

Explanation of symbols

E ... Organic EL device (organic electroluminescence device) 223 ... Pixel electrode (anode) S ... Plasma processing device (manufacturing device of organic electroluminescence device) 1 ... Vacuum chamber (processing chamber) 2 ... Substrate holder 202 ... Substrate 4A, 4B ... Electrode (plasma generation source) 5B ... Opening 5, 5 '... Shielding plate 5C ... Central part 5D ... Peripheral part 5A ... Rotating mechanism 5E ... Swing mechanism

Claims (10)

An apparatus for manufacturing an organic electroluminescence device that irradiates plasma to the anode of an organic electroluminescence device comprising an organic layer between an anode and a cathode,
A processing chamber to which process gas is supplied;
A substrate holding unit disposed in the processing chamber and holding a substrate;
A plasma generation source for irradiating the substrate with the process gas in a plasma state;
An organic electroluminescence device manufacturing apparatus, comprising: a shielding plate disposed between the substrate and the plasma generation source and having a plurality of openings.   2. The apparatus for manufacturing an organic electroluminescence device according to claim 1, wherein the plurality of openings are opened radially from a central portion to a peripheral portion of the shielding plate.   The apparatus for manufacturing an organic electroluminescent device according to claim 1, wherein the plurality of openings are formed radially at an equiangular pitch.   4. The width of each of the plurality of openings is formed so as to gradually increase from a central portion to a peripheral portion of the shielding plate. 5. The manufacturing apparatus of the organic electroluminescent apparatus as described in any one of.   The plurality of openings are formed so that an area of each of the plurality of openings gradually increases from a central part to a peripheral part of the shielding plate. The manufacturing apparatus of the organic electroluminescent apparatus as described in any one of claim | item 4.   The organic electroluminescent device manufacturing apparatus according to any one of claims 1 to 4, wherein each of the plurality of openings has an equal opening area.   The plurality of openings are formed so that an area of each of the plurality of openings gradually decreases from a central part to a peripheral part of the shielding plate. The manufacturing apparatus of the organic electroluminescent apparatus as described in any one of claim | item 4.   The apparatus for manufacturing an organic electroluminescence device according to claim 1, further comprising a rotation mechanism that rotates the shielding plate.   The apparatus for manufacturing an organic electroluminescence device according to claim 1, further comprising a swing mechanism that swings the shielding plate. A method for producing an organic electroluminescence device in which plasma is applied to the anode of an organic electroluminescence device comprising an organic layer between an anode and a cathode,
Placing a substrate on which the anode is formed in a processing chamber;
A plasma generation source that irradiates the substrate with a process gas supplied into the processing chamber in a plasma state, and a shielding plate having an opening portion interposed between the substrate and the substrate in the plasma state. A method of manufacturing an organic electroluminescence device, comprising: irradiating a gas.

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