JP2009256710A - Vapor deposition apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus capable of reliably removing impurities. <P>SOLUTION: The vapor deposition apparatus comprises a chamber body 12 the inside of which is evacuated and in which a substrate 11 to be processed is arranged, vessels 21, 26 for storing a material for vapor deposition, a heating means 30 for heating the material for vapor deposition, chambers 41, 42 for vapor deposition sources adjacently arranged in the chamber body 12, and the inside of which is evacuated and opened to the atmosphere, and in which the vessels 21, 26 are arranged, opening/closing members 43, 44 for making the inside of the chamber body connect/disconnect with/from the insides of the chambers 41, 42 for vapor deposition sources when the opening/closing members are opened/closed, a first exhaust means 50 connected to the chamber body 12, and a second exhaust means 55 connected to the chambers 41, 42 for vapor deposition sources. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a vapor deposition apparatus.

  A vapor deposition method using a vapor deposition apparatus is widely used for forming electrodes, wiring patterns, and the like in a device manufacturing process. The vapor deposition apparatus includes, for example, a ceramic crucible (crucible) that contains a conductive vapor deposition material, and a high-frequency dielectric coil (heating means) that evaporates the vapor deposition material contained in the crucible. In order to form a film using this, for example, a deposition source in which a deposition material is stored in a crucible is installed in a vacuum chamber, and a substrate to be processed is disposed above the deposition source. And the vapor deposition material in a crucible is heated and evaporated, and the vapor deposition material which became gas is made to contact a to-be-processed substrate and to adhere here. Thereby, the film | membrane consisting of vapor deposition material can be formed in the surface of a to-be-processed substrate.

In the vapor deposition method, the vapor deposition material is heated and evaporated to deposit impurities in the vapor deposition material, an oxide layer on the material surface, or the like in a crucible or a boat. Such a product lowers the temperature stability of the crucible or the boat, or the product scatters on the substrate to be processed together with the vapor deposition material, thereby causing a defect in the vapor deposition film. Therefore, a method for removing impurities in the crucible has been proposed (see, for example, Patent Document 1).
In the crucible for a continuous vacuum vapor deposition apparatus described in Patent Document 1, when impurities are generated in the crucible, the crucible is inclined and the impurities are dropped from the edge of the crucible. Thereby, impurities in the crucible are removed.
JP-A-6-256935

  However, in the crucible for a continuous vacuum vapor deposition apparatus described in Patent Document 1 above, the crucible is inclined and the impurities are dropped, but it is difficult to drop only the impurities, and the impurities in the crucible are completely removed. It is difficult.

  The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a vapor deposition apparatus that can reliably remove impurities.

In order to achieve the above object, the present invention provides the following means.
The vapor deposition apparatus of the present invention is a vapor deposition apparatus that deposits a vapor deposition material on a substrate to be processed, and the inside of the chamber can be evacuated, and the chamber main body in which the substrate to be processed is disposed, and the vapor deposition material are accommodated. A container, a heating means for heating the vapor deposition material, an evaporation source chamber that is disposed adjacent to the chamber body, the inside of which can be evacuated and opened to the atmosphere, and in which the container is disposed. An opening / closing member capable of communicating or blocking between the inside of the chamber body and the inside of the deposition source chamber, a first exhaust means connected to the chamber body, and a second connected to the deposition source chamber. And an exhaust means.

  In the vapor deposition apparatus according to the present invention, the chamber body and the vapor deposition source chamber are evacuated by operating the first exhaust means with the opening / closing member opened. And a container is heated with a heating means and the vapor deposition material accommodated in the crucible is evaporated. The evaporated deposition material is deposited on the substrate to be processed. Here, by heating the vapor deposition material, impurities and an oxide layer (product) are generated inside and around the container. Therefore, by closing the opening / closing member, the inside of the vapor deposition source chamber and the inside of the chamber body are shut off. Therefore, the second exhaust means can reliably remove (clean) impurities and oxide layers in a space in which the inside of the deposition source chamber is closed, thereby increasing the purity of the deposition material without exposing the chamber body to the atmosphere. be able to. Therefore, it is possible to prevent impurities and oxide layers from adhering to the substrate to be processed, and thus the quality of the deposited film deposited on the substrate to be processed can be improved. That is, when the vapor deposition material is cleaned, only the vapor deposition source chamber needs to be opened to the atmosphere by the second exhaust means, and the chamber main body does not need to be opened to the atmosphere, thereby improving the productivity of the apparatus.

  Moreover, it is preferable that the vapor deposition apparatus of this invention is equipped with the inert gas introduction means which introduces an inert gas in the said chamber for vapor deposition sources.

In the vapor deposition apparatus according to the present invention, the inert gas introducing means introduces, for example, N ₂ gas as an inert gas into the vapor deposition source chamber, thereby returning the vacuum vapor deposition source chamber to atmospheric pressure. In this manner, by returning the deposition source chamber to the atmospheric pressure by the inert gas, it is possible to prevent a new oxide layer from being formed on the deposition material.
Furthermore, since the inside of the deposition source chamber can be made a closed space, when the inside of the deposition source chamber is returned to atmospheric pressure by N ₂ gas, it is possible to prevent the product from scattering into the chamber body. it can.

  In the vapor deposition apparatus of the present invention, it is preferable that a plurality of the containers are provided, the vapor deposition source chamber is provided for each container, and the opening / closing member is provided for each vapor deposition source chamber.

In the vapor deposition apparatus according to the present invention, when the types of vapor deposition materials accommodated in the plurality of containers are different, the containers are arranged inside the vapor deposition source chamber for each type of vapor deposition material, and an opening / closing member is provided for each vapor deposition source chamber. Provide. Thereby, it is possible to prevent contamination (contamination) in which another type of vapor deposition material is mixed in a container in which a certain type of vapor deposition material is accommodated.
Moreover, even when the vapor deposition materials accommodated in the plurality of containers are the same, a chamber for the vapor deposition source is provided for each of the plurality of containers. Thus, while the opening / closing member of one deposition source chamber is closed and the impurities and the oxide layer in the deposition source chamber are removed, the opening / closing member of another deposition source chamber is opened to scatter the evaporation material. be able to. Therefore, the deposition material can be efficiently deposited on the substrate to be processed, so that the productivity can be improved.

In the vapor deposition apparatus of the present invention, it is preferable that the first exhaust unit also serves as the second exhaust unit.
In the vapor deposition apparatus according to the present invention, since the first exhaust means also serves as the second exhaust means, the exhaust means can be used in common, so that the entire apparatus can be reduced in size.

  In addition, the vapor deposition apparatus of the present invention includes the first exhaust pipe between the vapor deposition source chamber and the first exhaust unit, and the first exhaust pipe, the vapor deposition source chamber and the second exhaust pipe independently of each other. It is preferable to provide a second exhaust pipe for exhausting the product between the exhaust means.

  In the vapor deposition apparatus according to the present invention, the first exhaust pipe and the second exhaust pipe are provided independently. Thus, when the impurities and the oxide layer are removed by the second exhaust means, the first exhaust means is not contaminated via the first exhaust pipe, so that the impurities and the oxide layer are mixed in the chamber body. It becomes possible to prevent.

  Hereinafter, embodiments of a vapor deposition apparatus according to the present invention will be described with reference to the drawings. In the following drawings, the scale of each member is appropriately changed in order to make each member a recognizable size.

[One Embodiment]
FIG. 1 is a cross-sectional view of the main part showing the vapor deposition apparatus of this embodiment.
As shown in FIG. 1, the vapor deposition apparatus 1 according to the present embodiment is an apparatus that vapor-deposits a thin film on a surface 11 a of a substrate (substrate to be processed) 11, and includes a chamber (chamber body) 12, a substrate holding unit 13, and the like. The deposition source 20 and a crucible chamber (deposition source chamber) 40 are provided.
The chamber 12 is formed so as to be able to be sealed from the outside, and the inside can be decompressed by a vacuum exhaust unit (exhaust means) 50 having a pump or the like. The substrate holding unit 13 is provided on the ceiling side (upper side in the drawing) of the chamber 12 and can hold the substrate 11.

As shown in FIG. 1, the vapor deposition source 20 includes an Mg crucible (container) 21 containing Mg (magnesium) material (vapor deposition material) and an Ag crucible containing Ag (silver) material (vapor deposition material). A (container) 26 and a heating device (heating means) 30 for heating each of the Mg crucible 21 and the Ag crucible 26 are provided, and co-evaporation with Mg material and Ag material is performed. The heating device 30 is provided so as to cover the outer periphery of the Mg crucible 21 and the Ag crucible 26, and a heating mechanism such as a heating wire is provided.
The Mg crucible 21 and the Ag crucible 26 are cylindrical containers having an outer peripheral portion 27 and a bottom portion 28, and an upper portion is an opening 29.
Further, the Mg crucible 21 and the Ag crucible 26 are respectively accommodated in an Mg chamber 41 and an Ag chamber 42 provided outside the bottom surface 12 a of the chamber 12. The inside of the Mg chamber 41 and the Ag chamber 42 can be evacuated and opened to the atmosphere.

Openable and closable door valves (opening / closing members) 43 and 44 are provided at the bottom 12b of the chamber 12, and when the door valves 43 and 44 are opened, the interior of the chamber 12, and the interiors of the Mg chamber 41 and the Ag chamber 42 are provided. Each communicates.
Further, when the door valves 43 and 44 are closed, the Mg chamber 41 and the Ag chamber 42 are disconnected from the interior of the chamber 12.

The chamber 12 is connected to a vacuum exhaust unit 50 for exhausting the inside via an exhaust pipe (first exhaust pipe) 50a, and a first vacuum valve 51 is provided in the exhaust pipe 50a. By opening and closing the first vacuum valve 51, the exhaust inside the chamber 12 can be adjusted.
Further, the Mg chamber 41 and the Ag chamber 42 are also connected to a vacuum exhaust part 50 through exhaust pipes 41a and 42a, a second vacuum valve 52 is provided in the exhaust pipe 41a, and a third vacuum valve 53 is provided in the exhaust pipe 42a. Is provided. By opening and closing the second vacuum valve 52 and the third vacuum valve 53, the exhaust in the Mg chamber 41 and the Ag chamber 42 can be adjusted, respectively.

Further, in the Mg chamber 41 and the Ag chamber 42, product exhaust parts (other exhausts) for exhausting impurities and oxide layers (products) generated inside and around the exhaust pipe 55a (second exhaust pipe). Means) 55 is connected, and a product valve 56 is provided between the Mg chamber 41 and the Ag chamber 42 and the product exhaust part 55. By opening and closing the product valve 56, the exhaust inside the Mg chamber 41 and the Ag chamber 42 can be adjusted. Note that the product exhaust part 55 does not need to be evacuated in the Mg chamber 41 and the Ag chamber 42, and only needs to exhaust impurities and oxide layers. .
The Mg chamber 41 and the Ag chamber 42 are connected to an N ₂ introduction portion (inert gas introduction means) 60 for introducing N ₂ gas (inert gas) therein. N ₂ gas valve 57 is provided between N ₂ and N ₂ introduction part 60. By opening and closing the N ₂ gas valve 57, it is possible to adjust the _{N 2} gas introduced into the interior of the Mg chamber 41 and Ag chamber 42.

Next, a method for forming the MgAg film 45 on the substrate 11 using the vapor deposition apparatus 1 of the present embodiment having the above configuration will be described.
First, the substrate 11 is held by the substrate holder 13 so that the surface 11 a of the substrate 11 faces the vapor deposition source 20. A predetermined amount of Mg material is stored in the Mg crucible 21, and a predetermined amount of Ag material is stored in the Ag crucible 26.

Next, the first vacuum valve 51 is opened, the inside of the chamber 12 is evacuated by the vacuum exhaust part 50, the second vacuum valve 52 and the third vacuum valve 53 are opened, and the inside of the Mg chamber 41 and the Ag chamber 42 is opened. Each of these is evacuated to a vacuum. When the inside of the chamber 12 reaches a predetermined degree of vacuum, the first, second, and third vacuum valves 51, 52, and 53 are closed. At this time, the product valve 56 and the N ₂ gas valve 57 are closed.
Next, when the Mg crucible 21 and the Ag crucible 26 are heated by the heating device 30 and the door valves 43 and 44 are opened, the Mg material evaporates from the opening 29 of the Mg crucible 21 as shown in FIG. The Ag material evaporates from the opening 29 of the Ag crucible 26. Then, the Mg material and the Ag material adhere to the surface 11a of the substrate 11 to form the MgAg film 45.
Here, after the MgAg film 45 is formed on the substrate 11, when the Mg material, the impurities of the Ag material, the oxide layer on the material surface, etc. are deposited in the Mg chamber 41 and the Ag chamber 42, the door valves 43, 44. Close. The N ₂ gas valve 57 is opened, and the N ₂ gas is introduced into the Mg crucible 21 and the Ag crucible 26 by the N ₂ introduction unit 60.

After the N ₂ gas is introduced and returned to atmospheric pressure, the N ₂ gas valve 57 is closed, the product valve 56 is opened, the inside of the Mg chamber 41 and the Ag chamber 42 is exhausted, and the Mg crucible 21 In addition, impurities and oxide layers generated in and around the Ag crucible 26 are exhausted to the outside. When the impurities and the oxide layer are removed, the second and third vacuum valves 52 and 53 are opened, and the inside of the Mg chamber 41 and the Ag chamber 42 is evacuated by the evacuation unit 50 to obtain a predetermined degree of vacuum. Thereafter, another substrate 11 is held in the chamber 12 and the MgAg film is similarly deposited.

  In the vapor deposition apparatus 1 according to this embodiment, the inside of the Mg chamber 41 and the Ag chamber 42 and the inside of the chamber 12 are closed by closing the door valves 43 and 44 on the Mg chamber 41 and the Ag chamber 42 provided separately from the chamber 12. Is no longer communicated with. Thereby, only the Mg chamber 41 and the Ag chamber 42 can be returned to the atmosphere, and impurities and oxide layers can be reliably removed (cleaning), so that the purity of the Mg and Ag materials is increased without exposing the chamber 12 to the atmosphere. be able to. Therefore, since it is possible to prevent impurities and oxide layers from adhering to the substrate 11, the quality of the MgAg film 45 deposited on the substrate 11 can be improved.

Further, by returning the Mg chamber 41 and the Ag chamber 42 to atmospheric pressure with N ₂ gas, it is possible to prevent a new oxide layer from being formed on the vapor deposition material.
Further, since the inside of the Mg chamber 41 and the Ag chamber 42 can be made a closed space, when the inside of the Mg chamber 41 and the Ag chamber 42 is returned to atmospheric pressure by N ₂ gas, impurities and an oxide layer are present in the chamber 12. It is possible to prevent scattering.
Further, since the Mg crucible 21 and the Ag crucible 26 are accommodated in the separate Mg chamber 41 and Ag chamber 42, the Mg material is mixed into the Ag crucible 26 or the Ag material is mixed into the Mg crucible 21. It is possible to prevent contamination.

  In the present embodiment, co-evaporation using different materials of Mg material and Ag material is performed. However, even when a plurality of crucibles containing the same deposition material are provided, a crucible chamber (deposition source chamber) is provided for each crucible. ) May be provided. In this configuration, for example, when two crucibles are provided, while the crucible chamber door is closed and the crucible chamber is being cleaned, another crucible chamber door valve is opened to scatter the deposition material. be able to. Therefore, it is possible to efficiently deposit the deposition material on the substrate 11, and it is possible to improve productivity.

In addition, although the crucible was mentioned as an example and demonstrated as a container, it is not restricted to this, For example, the boat which can accommodate Mg and Ag material may be sufficient.
Moreover, although the vacuum exhaust part 50 and the product exhaust part 55 were provided separately, the vacuum exhaust part 50 may bear the product exhaust part 55.
Further, as the inert gas, N ₂ gas was used but not limited thereto.
Further, in the present embodiment, an example using the Mg crucible 21 and the Ag crucible 26 containing different types of vapor deposition materials has been described, but the vapor deposition materials accommodated in a plurality of crucibles are the same. For example, as shown in FIG. 2, a plurality of crucibles (two in the illustrated example, containers) 62 and 63 may be disposed in the same crucible chamber 61. In this configuration, a common door valve (opening / closing member) 65 is provided above the crucibles 62, 63, and the vapor deposition material can be scattered from the crucibles 62, 63 toward the substrate 11 by opening the door valve 65. It has become.
Furthermore, although the vapor deposition apparatus 1 having the two Mg crucibles 21 and the Ag crucible 26 has been described as an example, a vapor deposition apparatus having one crucible may be used. Alternatively, the Mg chamber 41 may include two Mg crucibles 21, and the Ag chamber 42 may include two Ag crucibles 26.

  The technical scope of the present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention.

It is principal part sectional drawing which shows the vapor deposition apparatus which concerns on one Embodiment of this invention. It is principal part sectional drawing which shows the modification of the chamber for crucibles in the vapor deposition apparatus which concerns on one Embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Deposition apparatus, 11 ... Substrate to be processed (substrate), 12 ... Chamber (chamber body), 21 ... Crucible (container) for Mg, 26 ... Crucible (container) for Ag, 30 ... Heating device (heating means), 41 ... Mg chamber (deposition source chamber), 42 ... Ag chamber (deposition source chamber), 43 ... Door valve (opening / closing member), 50 ... Vacuum exhaust section (exhaust means), 55 ... Product exhaust section (other exhaust means) ), 60 ... N ₂ introduction part (inert gas introduction means), 62, 63 ... crucible (accommodating part), 65 ... door valve (opening / closing member)

Claims (5)

A deposition apparatus for depositing a deposition material on a substrate to be processed,
A chamber body in which the inside can be evacuated and the substrate to be processed is disposed inside;
A container containing the vapor deposition material;
Heating means for heating the vapor deposition material;
A deposition source chamber disposed adjacent to the chamber body, the inside of which can be evacuated and opened to the atmosphere, and the container is disposed inside;
An opening / closing member capable of communicating or blocking between the inside of the chamber body and the inside of the vapor deposition source chamber when opened and closed;
A first exhaust means connected to the chamber body;
A vapor deposition apparatus comprising: a second exhaust unit connected to the vapor deposition source chamber.   The vapor deposition apparatus according to claim 1, further comprising an inert gas introduction unit that introduces an inert gas into the vapor deposition source chamber. A plurality of the containers are provided,
The vapor deposition apparatus according to claim 1, wherein the vapor deposition source chamber is provided for each of the containers, and the opening / closing member is provided for each of the vapor deposition source chambers.   The vapor deposition apparatus according to any one of claims 1 to 3, wherein the first exhaust means also serves as the second exhaust means. A first exhaust pipe between the vapor deposition source chamber and the first exhaust means;
5. A second exhaust pipe for exhausting a product between the vapor deposition source chamber and the second exhaust means independently of the first exhaust pipe. The vapor deposition apparatus of any one of these.

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