JP2009238994A - Method of manufacturing electronic component - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve production efficiency of an electronic component having a segmentation process. <P>SOLUTION: In the manufacturing method, a tape 13 is stuck to: the front surface of a medium layer 11; a laser 14 having a focal point in a medium layer 10 is emitted from the backside direction of the medium layer 10; the emission position of the laser 14 is moved onto a line 15 extending in an in-plane direction of the medium layer 10 to form a reforming region 16 in the medium layer 10; a tape 17 is stuck to the backside of the medium layer 10; the tape 13 is separated from the front surface of the medium layer 11; a laser 18 having a focal point in the medium layer 11 is emitted from the front surface direction of the medium layer 11; the emission position of the laser 18 is moved onto a line 19 extending in an in-plane direction of the medium layer 11 and symmetrical with the line 15 about the front surface of the medium layer 10 to form a reforming region 20 in the medium layer 11; and the tape 17 is expanded to segment an element formation layer 12 along the lines 15 and 19. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a method for manufacturing an electronic component used in an electronic device such as a digital camera, an automobile, or the like.

  Conventionally, this type of electronic component manufacturing method first includes a first medium layer 1 and a second medium layer 2 having a back surface formed on the surface of the first medium layer 1 as shown in FIG. A laser 4 having a focal point in the first and second medium layers 1 and 2 is irradiated from the back surface direction of the first medium layer 1 in the element forming layer 3 to have the first and second medium layers 1 and 2 in the first and second medium layers 1 and 2. In the manufacturing method, the modified region 5 by multiphoton absorption is formed, and the element forming layer 3 is divided along the modified region 5 to singulate.

As prior art document information relating to this application, for example, Patent Document 1 is known.
Japanese Patent No. 3762409

  In such a conventional electronic component manufacturing method, the poor production efficiency has been a problem.

  That is, in the above-described conventional manufacturing method, the state of the surface of the first medium layer 1 and the back surface of the second medium layer 2 at the boundary between the first medium layer 1 and the second medium layer 2 is a surface. Is uneven, the balance of reflection, transmission and absorption of light between the first and second medium layers 1 and 2 is non-uniform, and the incident state of the laser on the second medium layer 2 is the surface direction. Will be different. Therefore, as shown in FIG. 19, the modified region 5 in the second medium layer 2 cannot be formed in parallel with the surface of the second medium layer 2, and the non-modified region 6 is formed in the line to be separated. As a result, when the element forming layer 3 is divided, the element forming layer 3 cannot be divided, or is divided by a line that is separated from the line desired to be separated, and the production efficiency is deteriorated.

  Then, this invention aims at improving the production efficiency of the electronic component which has an individualization process.

  In order to achieve this object, the present invention provides the second medium layer in the element forming layer having a first medium layer and a second medium layer having a back surface formed on the surface of the first medium layer. Applying a first tape to the surface of the medium layer; and irradiating a laser having a focal point in the first medium layer from the back surface direction of the first medium layer in the element forming layer; Moving the irradiation position onto a first line extending in the surface direction of the first medium layer to form a first modified region by multiphoton absorption in the first medium layer; and A step of affixing a second tape to the back surface of the medium layer; a step of peeling the first tape from the surface of the second medium layer; and a direction of the surface of the second medium layer; Irradiating a laser having a focal point in the medium layer, and said laser The irradiation position extends in the plane direction of the second medium layer and is moved on the second line that is symmetrical to the first line with respect to the surface of the first medium layer to enter the second medium layer. Forming a second modified region by multiphoton absorption; and extending the second tape in the surface direction of the element forming layer to separate the element forming layer along the first and second lines. The manufacturing method of the electronic component which has a process to convert.

  With this manufacturing method, the second modified region in the second medium layer is formed not by the laser transmitted through the first medium layer but by the laser incident from the surface direction of the second medium layer. Therefore, it is possible to intervene the non-modified region in the line to be separated due to the state of the surface of the first medium layer and the back surface of the second medium layer being not uniform in the surface direction. As a result, production efficiency can be improved.

(Embodiment 1)
Hereinafter, the manufacturing method of the electronic component in Embodiment 1 of this invention is demonstrated, referring drawings.

  First, as shown in FIG. 1, an SOI substrate 11 as a second medium layer is formed on the surface of a silicon substrate 10 as a first medium layer, and this is used as an element formation layer 12. The contact surface of the SOI substrate 11 with the silicon substrate 10 is the back surface of the SOI substrate 11.

  Next, as shown in FIG. 2, the element forming layer 12 is turned upside down, and the first tape 13 is attached to the surface of the SOI substrate 11. Here, the first tape 13 has a first base material 13A formed using polyethylene terephthalate and a first adhesive layer 13B formed on the surface of the first base material 13A. The surface of the SOI substrate 11 is bonded to the first adhesive layer 13B.

  Thereafter, as shown in FIG. 3, the laser 14 having a focal point in the silicon substrate 10 is irradiated from the back surface direction of the silicon substrate 10, and the irradiation position of the laser 14 is changed to the surface direction of the silicon substrate 10 as shown in FIG. 4. As shown in FIG. 3, the first modified region 16 by multiphoton absorption is formed in the silicon substrate 10.

  Next, as shown in FIG. 5, the second tape 17 is attached to the back surface of the silicon substrate 10. Here, the second tape 17 has a second base material 17A formed using polyvinyl chloride or polyolefin, and a second adhesive layer 17B formed on the surface of the second base material 17A. The back surface of the silicon substrate 10 is attached to the second adhesive layer 17B.

  After that, as shown in FIG. 6, the element forming layer 12 is turned upside down, and the first tape 13 shown in FIG. 5 is peeled from the surface of the SOI substrate 11.

  Next, as shown in FIG. 7, from the surface direction of the SOI substrate 11, a laser 18 having a focal point is irradiated in the SOI substrate 11, and the irradiation position of the laser 18 is shown in FIG. Move up. Here, the line 19 extends in the plane direction of the SOI substrate 11 and is symmetrical with the first line 15 with respect to the surface 10 </ b> A of the silicon substrate 10. In this manner, as shown in FIG. 7, the second modified region 20 by multiphoton absorption is formed in the SOI substrate 11.

  Thereafter, as shown in FIG. 9, the second tape 17 is expanded in the surface direction of the element formation layer 12 to form the first modified region 16 formed in the silicon substrate 10 and the SOI substrate 11. A crack occurs in the second modified region 20, and the element forming layer 12 can be separated into pieces along the first and second lines 15 and 19.

  By such a manufacturing method, the formation of the second modified region 20 in the SOI substrate 11 is performed by the laser 18 incident from the surface direction of the SOI substrate 11 instead of the laser 14 transmitted through the first medium layer 10. Since it can be formed, the surface state of the surface of the silicon substrate 10 and the back surface of the SOI substrate 11 is not uniform in the surface direction, thereby suppressing the inclusion of unmodified regions in the line to be separated into individual pieces. As a result, production efficiency can be improved.

  Note that the first base 13A of the first tape 13 shown in FIG. 5 may be formed using a material other than polyethylene terephthalate, but a strong material such as polyethylene terephthalate is used. It is desirable that the SOI substrate 11 can be easily peeled from the first tape 13. Polyethylene terephthalate is also useful in that it has high heat resistance.

  In addition, as the 1st adhesion layer 13B in the 1st tape 13, it is desirable to use an easily peelable adhesion layer. This is because the first tape 13 shown in FIG. 6 can be easily peeled off from the SOI substrate 11 and the productivity can be improved.

  In addition, as the first adhesive layer 13B, it is also desirable to use a UV curable adhesive layer. This is because, in the first tape 13 peeling step shown in FIG. 6, the UV light can be reliably peeled from the SOI substrate 11 by irradiation from the first base material 13 </ b> A side.

  In addition, as this 1st adhesion layer 13B, even if it uses a heat foaming type or a light foaming type adhesion layer, it can peel from the SOI substrate 11 reliably, and is desirable.

  Note that the second base material of the second tape 17 is preferably formed using polyvinyl chloride or polyolefin. This is because the expandability is high and each element can be easily separated in the singulation process shown in FIG.

  As the second adhesive layer 17B in the second tape 17, it is desirable to use a UV curable adhesive layer. In the singulation process shown in FIG. 9, the second tape 17 and the silicon substrate 10 are strongly bonded to each other, so that the second tape 17 can surely expand in the surface direction of the element forming layer 12. By transmitting to the silicon substrate 10 and the SOI substrate 11, the element formation layer 12 is reliably separated into individual pieces, and then the separated elements are separated from the second tape 17 and taken out. This is because UV light can be reliably peeled off. Furthermore, there is an advantage that light or heat is not applied to the element, and the burden on the element can be reduced.

  As a method for bonding the silicon substrate 10 and the SOI substrate 11, bonding, Au—Au bonding, anodic bonding, direct bonding, solder bonding, or the like can be used.

  Here, the term “adhesion” refers to a method in which two surfaces are bonded by a chemical or physical force or both using an adhesive as a medium.

  Here, the Au—Au bonding refers to a method in which gold is arranged at opposing positions on the bonding surfaces and bonding is performed by atomic bonds of the gold itself.

  Here, anodic bonding is a method in which at least two layers of substrates are stacked and heated, one substrate is used as an anode, the other substrate is used as a cathode, and bonding is performed by continuously applying a high DC voltage. .

  Here, the direct bonding means bonding between the bonding surfaces of the two layers by intermolecular bonding of the bonding material itself without using a mediating material.

  Here, the solder bonding is a method of bonding by melting solder that mediates between two layers of substrates.

  However, among the above-described joining methods, it is desirable to use adhesion or Au—Au joining. This is because the silicon substrate 10 and the SOI substrate 11 are not heated to a high temperature, a high voltage is not applied, and it is not necessary to clean the respective joint surfaces.

  Further, it is desirable that a functional thin film such as PZT can be formed on the SOI substrate 11 by not increasing the temperature.

  As shown in FIG. 10, when the SOI substrate 11 constituting the element has a fragile shape as compared with the silicon substrate 10, as shown in the present embodiment, the surface of the SOI substrate 11 is formed. It is desirable to apply a manufacturing method in which the first tape 13 is attached and the silicon substrate 10 is irradiated with laser, and then the second tape 17 is attached to the back surface of the silicon substrate 10 and the SOI substrate 11 is irradiated with laser. By doing so, when the second tape 17 is expanded as shown in FIG. 9, the thin portion of the SOI substrate 11 is prevented from being destroyed, and then the separated elements are picked up from the second tape 17. This is because the way in which stress is applied to the SOI substrate 11 can be controlled.

  Here, the case where the SOI substrate 11 has a fragile shape as compared to the silicon substrate 10 means that the thickness of the thinnest part of the SOI substrate 11 is thinner than the thickness of the thinnest part of the silicon substrate 10 or the SOI substrate. 11 is the case where the thickness of the finest detail is thinner than the thickness of the finest detail of the silicon substrate 10. In the present embodiment, as shown in FIG. 10, the thinnest part of the SOI substrate 11 is thinner than the thinnest part of the silicon substrate 10.

  The process will be specifically described below.

  First, as shown in FIG. 11, an SOI substrate 11 as a second medium layer is formed on the surface of a silicon substrate 10 as a first medium layer, and this is used as an element formation layer 12. The contact surface of the SOI substrate 11 with the silicon substrate 10 is the back surface of the SOI substrate 11.

  Then, the first tape 13 is attached to the surface of the SOI substrate 11. Here, the first tape 13 has a first base material 13A formed using polyethylene terephthalate and a first adhesive layer 13B formed on the surface of the first base material 13A. The surface of the SOI substrate 11 is bonded to the first adhesive layer 13B.

  Thereafter, a laser 14 having a focal point in the silicon substrate 10 is irradiated from the back surface direction of the silicon substrate 10, and the irradiation position of the laser 14 is a first line extending in the surface direction of the silicon substrate 10 as shown in FIG. As shown in FIG. 11, the first modified region 16 by multiphoton absorption is formed in the silicon substrate 10.

  Next, as shown in FIG. 12, the second tape 17 is attached to the back surface of the silicon substrate 10. Here, the second tape 17 has a second base material 17A formed using polyvinyl chloride or polyolefin, and a second adhesive layer 17B formed on the surface of the second base material 17A. The back surface of the silicon substrate 10 is attached to the second adhesive layer 17B.

  After that, as shown in FIG. 13, the element forming layer 12 is turned upside down, and the first tape 13 shown in FIG. 12 is peeled off from the surface of the SOI substrate 11.

  Next, as shown in FIG. 14, from the surface direction of the SOI substrate 11, a laser 18 having a focal point is irradiated into the SOI substrate 11, and the irradiation position of the laser 18 is irradiated with the second line 19 as shown in FIG. Move up. Here, the second line 19 extends in the surface direction of the SOI substrate 11 and is symmetrical with the first line 15 with respect to the surface of the silicon substrate 10. In this manner, as shown in FIG. 14, the second modified region 20 by multiphoton absorption is formed in the SOI substrate 11.

  Thereafter, as shown in FIG. 15, the second tape 17 is expanded in the surface direction of the element formation layer 12 to form the first modified region 16 formed in the silicon substrate 10 and the SOI substrate 11. Cracks occur in the second modified region 20, and the element forming layer 12 can be separated into pieces along the first and second lines 15 and 19 shown in FIG.

  By such a manufacturing method, the formation of the second modified region 20 in the SOI substrate 11 is performed by the laser 18 incident from the surface direction of the SOI substrate 11 instead of the laser 14 transmitted through the first medium layer 10. Since it can be formed, the surface state of the surface of the silicon substrate 10 and the back surface of the SOI substrate 11 is not uniform in the surface direction, thereby suppressing the inclusion of unmodified regions in the line to be separated into individual pieces. As a result, production efficiency can be improved.

  Further, since it is possible to suppress the presence of the non-modified region in the line that is desired to be separated into individual pieces, the acceleration sensor shown in FIG. 17 and the composite sensor consisting of the acceleration and angular velocity sensors shown in FIG. 18 are very fragile. It is possible to manufacture an element having a simple structure.

  Furthermore, since the silicon substrate 10 and the SOI substrate 11 are not bonded to each other but bonded to each other after bonding, it is sufficient to form alignment marks for each substrate, not for each element. Therefore, productivity can be improved.

  In the present embodiment, as shown in FIG. 10, the configuration is shown in which the second line 19 is singulated so that the second line 19 is symmetrical with the first line 15 with respect to the surface of the silicon substrate 10. However, as shown in FIG. 16, the silicon substrate 10 and the SOI substrate 11 are joined with a member 21 made of gold or the like interposed therebetween, and a space 22 exists between the silicon substrate 10 and the SOI substrate 11. In some cases, the second line 19 can be singulated even if it is not symmetrical with the first lines 15A, 15B with respect to the surface of the silicon substrate 10.

  The method for manufacturing an electronic component of the present invention has an effect that production efficiency can be improved, and is useful in various electronic devices such as digital cameras, automobiles, and the like.

Sectional drawing which shows the manufacturing method of the electronic component in Embodiment 1 of this invention Sectional drawing which shows the manufacturing method of the electronic component in Embodiment 1 of this invention Sectional drawing which shows the manufacturing method of the electronic component in Embodiment 1 of this invention The top view which shows the manufacturing method of the electronic component in Embodiment 1 of this invention Sectional drawing which shows the manufacturing method of the electronic component in Embodiment 1 of this invention Sectional drawing which shows the manufacturing method of the electronic component in Embodiment 1 of this invention Sectional drawing which shows the manufacturing method of the electronic component in Embodiment 1 of this invention The perspective view which shows the manufacturing method of the electronic component in Embodiment 1 of this invention. The perspective view which shows the manufacturing method of the electronic component in Embodiment 1 of this invention. Sectional drawing which shows the manufacturing method of the electronic component in Embodiment 1 of this invention Sectional drawing which shows the manufacturing method of the electronic component in Embodiment 1 of this invention Sectional drawing which shows the manufacturing method of the electronic component in Embodiment 1 of this invention Sectional drawing which shows the manufacturing method of the electronic component in Embodiment 1 of this invention Sectional drawing which shows the manufacturing method of the electronic component in Embodiment 1 of this invention Sectional drawing which shows the manufacturing method of the electronic component in Embodiment 1 of this invention Sectional drawing which shows the manufacturing method of the electronic component in Embodiment 1 of this invention The perspective view which shows the electronic component manufactured by the manufacturing method of the electronic component in Embodiment 1 of this invention The perspective view which shows the other electronic component manufactured with the manufacturing method of the electronic component in Embodiment 1 of this invention Sectional drawing which shows the manufacturing method of the conventional electronic component

Explanation of symbols

10 First medium layer (silicon substrate)
11 Second medium layer (SOI substrate)
DESCRIPTION OF SYMBOLS 12 Element formation layer 13 1st tape 14 Laser 15 1st line | wire 16 1st modification area | region 17 2nd tape 18 Laser 19 2nd line | wire 20 2nd modification area | region

Claims (13)

A step of attaching a first tape to the surface of the second medium layer in an element forming layer having a first medium layer and a second medium layer having a back surface formed on the surface of the first medium layer. When,
A laser beam having a focal point in the first medium layer is irradiated from the back surface direction of the first medium layer in the element forming layer, and the irradiation position of the laser extends in the surface direction of the first medium layer. Forming a first modified region by multiphoton absorption in the first medium layer by moving on the first line;
Applying a second tape to the back surface of the first medium layer;
Peeling the first tape from the surface of the second medium layer;
A laser having a focal point in the second medium layer is irradiated from the surface direction of the second medium layer, and the irradiation position of the laser is on a second line extending in the surface direction of the second medium layer Moving to form a second modified region by multiphoton absorption in the second medium layer;
Expanding the second tape in the surface direction of the element forming layer and dividing the element forming layer into pieces along the first and second lines. 2. The method of manufacturing an electronic component according to claim 1, wherein the second line is symmetric with respect to the first line with respect to a surface of the first medium layer. The first tape has a first base material and a first adhesive layer formed on the surface of the first base material,
The method of manufacturing an electronic component according to claim 1, wherein the first base material is formed using polyethylene terephthalate. The first tape has a first base material and a first adhesive layer formed on the surface of the first base material,
The method for manufacturing an electronic component according to claim 1, wherein the first adhesive layer is an easily peelable adhesive layer. The first tape has a first base material and a first adhesive layer formed on the surface of the first base material,
The method of manufacturing an electronic component according to claim 1, wherein the first adhesive layer is a UV curable adhesive layer. The first tape has a first base material and a first adhesive layer formed on the surface of the first base material,
The method of manufacturing an electronic component according to claim 1, wherein the first adhesive layer is a heat-foaming adhesive layer. The first tape has a first base material and a first adhesive layer formed on the surface of the first base material,
The method for manufacturing an electronic component according to claim 1, wherein the first adhesive layer is a light-foaming adhesive layer. The second tape has a second base material and a second adhesive layer formed on the surface of the second base material,
The method for manufacturing an electronic component according to claim 1, wherein the second base material is formed using polyvinyl chloride or polyolefin. The second tape has a second base material and a second adhesive layer formed on the surface of the second base material,
The method for manufacturing an electronic component according to claim 1, wherein the second adhesive layer is a UV curable adhesive layer. The method of manufacturing an electronic component according to claim 1, wherein each of the first and second lines includes a plurality of lines. The method of manufacturing an electronic component according to claim 1, wherein the second medium layer has a shape weaker than the first medium layer. 2. The method of manufacturing an electronic component according to claim 1, wherein the thickness of the thinnest part in the second medium layer is thinner than the thickness of the thinnest part in the first medium layer. 2. The method of manufacturing an electronic component according to claim 1, wherein the thickness of the finest detail in the second medium layer is smaller than the thickness of the finest detail in the first medium layer.

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