JP2009231503A - Substrate treatment apparatus, substrate treatment method, and two-fluid nozzle - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a two-fluid nozzle which helps to wash a substrate more efficiently, and also to provide a substrate treatment apparatus and a substrate treatment method which can perform washing processing by using the two-fluid nozzle. <P>SOLUTION: A flow channel formation member 31 and a lid member 39 are members primarily for forming an introduction path for a gas supplied from the compressed air supply source side. A flow channel formation member 41 and a lid member 49 are members primarily for forming an introduction path for a gas supplied from the compressed air supply source side. When the flow channel formation members 31 and 41 are arranged back to back, an introduction path for a liquid supplied from a washing liquid supply source 71 is formed, and at the same time, a liquid discharge port having nearly a rectangular shape having a longitudinal direction in a Y-axis direction and a width direction in an X-axis direction is formed. A lead-out member 51 is a member for forming a discharge port for a gas supplied from the flow channel formation member 31 side and a gas supplied from the flow channel formation member 41 side. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for processing a semiconductor substrate, a glass substrate for a liquid crystal display device, a glass substrate for a photomask, a substrate for an optical disk (hereinafter simply referred to as “substrate”), and two The present invention relates to a fluid nozzle.

  Conventionally, a two-fluid nozzle that can generate a mist-like mist (droplet) by mixing a pressurized gas and a liquid is known (for example, Patent Documents 1 to 5).

  For example, in the technique described in Patent Document 1, the main air jet flow for atomization is discharged from the outside of the liquid paint flow, and the auxiliary air jet flow for atomization is discharged inside (inner side) of the liquid paint flow. The liquid paint is atomized by mixing the air jet stream and the liquid paint stream.

  In the technique described in Patent Document 2, the atomization process of the one-fluid system and the two-fluid system is switched and executed according to the supply pressure of the liquid.

  In the technique described in Patent Document 3, (1) the gas discharged from the ring-shaped gas discharge port, and (2) the gas is formed in the inner region of the gas discharge port. The mist of the mixed fluid is sprayed by mixing the liquid to be discharged.

  Patent Document 4 discloses an outer casing and an inner casing having a tapered shape toward the discharge port. The inside casing is formed as a liquid flow path, and the space between the inner casing and the outer casing is formed as a gas flow path. And in the technique described in patent document 4, the liquid discharged from the plurality of slits on the taper surface of the inner casing and the gas discharged from the opening of the gas flow path are mixed, thereby mixing the mixed fluid. Form a mist.

  Further, in the technique described in Patent Document 5, (1) firstly primary particle formation in the liquid flow path, and (2) next, the air flowing through the central air flow path is collided with the liquid. Secondary atomization (3) Subsequently, tertiary atomization is performed by colliding the air flowing through the outer air flow path with the liquid.

  In general, the substrate manufacturing process requires that the surface of the substrate be kept extremely clean. Therefore, a cleaning process for removing contaminants such as particles adhering to the substrate surface is performed for each of various steps in the substrate manufacturing process. A technique is known that uses a mist-like cleaning mist (droplet) supplied from a two-fluid nozzle as a cleaning liquid (chemical solution or pure water) for removing fine particles adhering to the substrate surface (for example, Patent Documents 6 to 8).

Japanese Patent Laid-Open No. 04-171067 JP-A-2005-009409 JP 2005-288390 A JP 2003-103203 A Japanese Patent No. 3382573 JP 2005-353739 A JP 2004-356317 A Japanese Patent Application Laid-Open No. 2005-166792

  Here, the cleaning liquid droplets discharged from the two-fluid nozzle are used to remove contaminants attached to the substrate for cleaning, and the contaminants are removed as the number of droplets supplied to the substrate increases. It is known that the rate will improve. When the supply amount of the cleaning liquid supplied to the two-fluid nozzle for droplet formation (the volume of the cleaning liquid supplied to the two-fluid nozzle per unit time) is constant, the unit decreases as the droplet diameter decreases. The number of droplets supplied to the substrate per hour increases. Therefore, by further reducing the diameter of the droplets supplied to the substrate, it is possible to reduce the time required for the cleaning process without reducing the removal rate.

  It is also known that the damage given to the wiring pattern and the like formed on the substrate during cleaning decreases as the diameter of the droplets discharged from the two-fluid nozzle decreases.

  As described above, in order to shorten the cleaning process time and reduce the damage to the substrate while maintaining the removal efficiency of contaminants, a technique for further atomizing the diameter of droplets supplied to the substrate is used. Needed.

  Accordingly, an object of the present invention is to provide a two-fluid nozzle that can perform substrate cleaning more efficiently, and a substrate processing apparatus and a substrate processing method that can perform a cleaning process using the two-fluid nozzle.

  In order to solve the above problems, the invention of claim 1 includes a substrate holding means for holding a substrate, and a two-fluid nozzle for supplying droplets to the substrate held by the substrate holding means, The two-fluid nozzle is provided so as to sandwich the liquid discharge port and a liquid discharge unit that discharges the liquid from the substantially rectangular liquid discharge port toward the substrate, and gas is supplied to the liquid discharged from the liquid discharge port. And the first and second gas discharge portions that form the droplets, and at least one of the first and second gas discharge portions is a liquid liquid discharged from the liquid discharge port. The gas is discharged substantially perpendicular to the flow.

  According to a second aspect of the present invention, in the substrate processing apparatus of the first aspect, the other of the first and second gas ejection portions is substantially perpendicular to the liquid flow from the liquid ejection port. The gas is discharged in the above.

  According to a third aspect of the present invention, in the substrate processing apparatus of the first or second aspect, the liquid flow from the liquid discharge port is covered with the gas in the first and second gas discharge portions. Thus, the gas is discharged.

  According to a fourth aspect of the present invention, in the substrate processing apparatus according to any one of the first to third aspects, at least one of the first and second gas ejection portions is the side surface of the liquid flow. The gas is discharged substantially perpendicularly to the long surface along the longitudinal direction of the liquid discharge port.

  The invention according to claim 5 is the substrate processing apparatus according to any one of claims 1 to 4, wherein the width of the liquid discharge port is not less than 0.1 mm and not more than 1.0 mm. .

  According to a sixth aspect of the present invention, in the substrate processing apparatus according to any one of the first to fifth aspects, the length of the liquid discharge port is 2 mm or more and 60 mm or less.

  The invention according to claim 7 is the substrate processing apparatus according to any one of claims 1 to 6, wherein the distance from the liquid flow and the collision position of the gas to the upper surface of the substrate is 3 mm or more and 30 mm or less. It is characterized by being.

  The invention according to claim 8 is provided so as to sandwich the liquid discharge port and a liquid discharge unit that discharges liquid from the substantially rectangular liquid discharge port toward the substrate, and the liquid discharge port discharges the liquid discharge port. First and second gas discharge portions that form liquid droplets by causing gas to collide with the liquid, and at least one of the first and second gas discharge portions is discharged from the liquid discharge port The gas is discharged substantially perpendicular to the liquid flow.

  The invention according to claim 9 is the two-fluid nozzle according to claim 8, wherein the other of the first and second gas discharge portions is substantially perpendicular to the liquid flow from the liquid discharge port. The gas is discharged in the above.

  The tenth aspect of the present invention is the two-fluid nozzle according to the eighth or ninth aspect, wherein the liquid flow from the liquid discharge port is covered with the gas in the first and second gas discharge portions. Thus, the gas is discharged.

  The invention of claim 11 is the two-fluid nozzle according to any one of claims 8 to 10, wherein at least one of the first and second gas discharge portions is the side of the liquid flow. The gas is discharged substantially perpendicularly to the long surface along the longitudinal direction of the liquid discharge port.

  According to a twelfth aspect of the present invention, in the two-fluid nozzle according to any one of the eighth to eleventh aspects, the width of the liquid discharge port is 0.1 mm or more and 1.0 mm or less. .

  According to a thirteenth aspect of the present invention, in the two-fluid nozzle according to any one of the eighth to twelfth aspects, the length of the liquid discharge port is 2 mm or more and 60 mm or less.

  The invention according to claim 14 is the two-fluid nozzle according to any one of claims 8 to 13, wherein the distance from the collision position of the liquid flow and the gas to the upper surface of the substrate is 3 mm or more and 30 mm or less. It is characterized by being.

  The invention of claim 15 includes (a) a step of holding the substrate, and (b) a step of supplying droplets to the substrate held by the step (a), wherein the step (b (B-1) a step of discharging liquid from the substantially rectangular liquid discharge port toward the substrate, and (b-2) gas from both sides of the liquid flow of the liquid discharged from the liquid discharge port. Forming the droplets by colliding with each other, and the step (b-2) is substantially perpendicular to the liquid flow of the liquid ejected from the liquid ejection port from at least one side. It is characterized by discharging gas.

  According to a sixteenth aspect of the present invention, in the substrate processing method according to the fifteenth aspect, the step (b-2) discharges the gas substantially vertically from both sides of the liquid flow.

  The invention according to claim 17 is the substrate processing method according to claim 15 or claim 16, wherein the step (b-2) is performed so that the liquid flow from the liquid discharge port is covered with the gas. The gas is discharged.

  The invention according to claim 18 is the substrate processing method according to any one of claims 15 to 17, wherein the step (b-2) includes a longitudinal direction of the liquid discharge port among the side surfaces of the liquid flow. The gas is discharged substantially perpendicularly to at least one side of the long surface along the direction.

  The invention according to claim 19 is the substrate processing method according to any one of claims 15 to 18, characterized in that the width of the liquid discharge port is 0.1 mm or more and 1.0 mm or less. .

  According to a twentieth aspect of the present invention, in the substrate processing method according to any one of the fifteenth to nineteenth aspects, the length of the liquid discharge port is 2 mm or more and 60 mm or less.

  The invention according to claim 21 is the substrate processing method according to any one of claims 15 to 20, wherein the distance from the liquid flow and the gas collision position to the upper surface of the substrate is 3 mm or more and 30 mm or less. It is characterized by being.

  According to the first to twenty-first aspects of the present invention, the compressed air can be discharged from at least one of the first and second gas discharge portions substantially perpendicular to the liquid flow of the cleaning liquid. Thereby, a sufficient shearing force can be applied to the liquid flow of the cleaning liquid, and the liquid droplets of the cleaning liquid can be atomized. Therefore, by supplying droplets to the substrate from the two-fluid nozzle, it is possible to improve damage removal rate and reduce damage to structures such as a wiring pattern formed on the substrate. As a result, good substrate cleaning can be realized.

  In particular, according to the second, ninth, and sixteenth aspects, the liquid flow from the liquid discharge port is sandwiched by the gas discharged from both the first and second gas discharge portions. Thereby, a shearing force can be applied to the liquid flow more favorably. Therefore, the diameter of the generated droplet can be further reduced and the diameter size can be made uniform.

  In particular, according to the invention described in claim 3, claim 10, and claim 17, the first and second gas discharge portions can discharge gas so that the liquid flow is covered with gas. Therefore, the generated droplets can be efficiently supplied to the substrate side.

  In particular, according to the invention of claim 4, claim 11, and claim 18, at least one of the first and second gas discharge portions is along the longitudinal direction of the liquid discharge port among the side surfaces of the liquid flow. Gas can be discharged substantially perpendicularly to the long surface. Thereby, a shearing force can be applied to the liquid flow more favorably. Therefore, the diameter of the generated droplet can be further reduced and the diameter size can be made uniform.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

<1. Configuration of Substrate Processing System and Substrate Processing Apparatus>
FIG. 1 is a plan view showing an example of the configuration of a substrate processing system 100 according to an embodiment of the present invention. Here, the substrate processing system 100 is used for a cleaning process for removing contaminants such as particles and various metal impurities attached to the substrate W. As shown in FIG. 1, the substrate processing system 100 mainly includes a substrate processing unit PS and an indexer unit ID.

  The indexer unit ID is arranged in parallel with the substrate processing unit PS, and delivers an unprocessed substrate that has not been subjected to cleaning processing to the substrate processing unit PS side, and receives a substrate that has been cleaned from the substrate processing unit PS side. . As shown in FIG. 1, the indexer unit ID mainly includes a mounting table 7 and an indexer robot 8.

  The mounting table 7 mounts a plurality (four in the present embodiment) of cassettes C. Each cassette C can store a plurality of substrates W. As a form of the cassette C, in addition to a FOUP (front opening unified pod) for storing a plurality of substrates W in a sealed space, a standard mechanical interface (SMIF) pod or an OC (open cassette for exposing the storage substrate W to the outside air). ) May be adopted.

  The indexer robot 8 delivers the substrate W between each cassette C and the substrate transport robot 3 on the substrate processing unit PS side. As shown in FIG. 1, the indexer robot 8 mainly includes a movable base 8a and a holding arm 8b.

  The movable table 8a can be moved horizontally along the mounting table 7 (along the Y-axis direction). The holding arm 8b is mounted on the upper part of the movable table 8a and holds the substrate W in a horizontal posture. The holding arm 8b can be moved up and down (in the Z-axis direction) on the movable table 8a, and can be turned in a horizontal plane (XY plane). Further, the holding arm 8b can be advanced and retracted in the turning radius direction. Accordingly, the indexer robot 8 moves the movable base 8a and the holding arm 8b to take out the unprocessed substrate W from each cassette C or handle the processed substrate W delivered from the substrate processing unit PS side. Can be stored in a cassette C.

  The substrate processing unit PS performs substrate processing such as cleaning processing on the substrate W transferred from the indexer unit ID side. As shown in FIG. 1, the substrate processing unit PS mainly includes a plurality of substrate processing apparatuses 1 and a substrate transport robot 3.

  The substrate transfer robot 3 delivers the substrate W between each substrate processing apparatus 1 and the indexer robot 8 of the indexer unit ID. As shown in FIG. 1, the substrate transport robot 3 is disposed substantially at the center of the substrate processing unit PS in plan view, and mainly includes a plurality (two in the present embodiment) of holding arms 3a and 3b, And a base 3c.

  The upper holding arm 3a and the lower holding arm 3b are used for transferring unprocessed substrates and processed substrates, for example. Each holding arm 3a, 3b is mounted on the upper part of the base 3c, and holds the substrate W in a horizontal posture. Each holding arm 3a, 3b can be moved up and down with respect to the base 3c, and can be turned in a horizontal plane. Furthermore, each holding arm 3a, 3b can be advanced and retracted in the turning radius direction. Accordingly, the substrate transfer robot 3 can deliver an unprocessed substrate W to each substrate processing apparatus 1 and receive a processed substrate W from the substrate processing apparatus 1.

  A plurality (four in this embodiment) of substrate processing apparatuses 1 are arranged at four corners in the substrate processing unit PS so as to surround the substrate transfer robot 3. Each substrate processing apparatus 1 is a so-called single-plate type substrate cleaning apparatus, and cleans the substrates W one by one with a spray-like cleaning liquid formed by a two-fluid nozzle.

  FIG. 2 is a front view showing an example of the configuration of the substrate processing apparatus 1 according to the embodiment of the present invention. As shown in FIG. 2, the substrate processing apparatus 1 mainly includes a rotation holding unit 10, a two-fluid nozzle 30, a compressed air supply unit 60, and a cleaning liquid supply unit 70.

  The rotation holding unit 10 (substrate holding unit) rotates the substrate W while holding it. As shown in FIG. 2, the rotation holding unit 10 mainly includes a disk-shaped spin base 11, a scattering prevention cup 12, a rotating shaft 15, and a motor 16.

  The spin base 11 has a slightly larger planar size than the substrate W. A plurality of support pins 11 a are erected on the peripheral edge of the upper surface of the spin base 11. When each support pin 11a abuts on the peripheral edge of the substrate W, the substrate W is held on the spin base 11 side in a substantially horizontal posture with the main surface thereof directed upward.

  The anti-scattering cup 12 has a substantially annular shape, and can surround the outer side in the horizontal direction of the substrate W held by the spin base 11. Thereby, the processing liquid splashed from the substrate W by the centrifugal force of rotation is collected by the splash prevention cup 12.

  As shown in FIG. 2, the rotation shaft 15 is suspended from the lower surface side of the center portion of the spin base 11. Further, the rotating shaft 15 is linked and connected to the motor 16. Therefore, when the motor 16 is driven, the substrate W held on the spin base 11 side rotates together with the spin base 11 in a substantially horizontal plane.

  The nozzle drive mechanism 20 is a drive unit that swings and lifts the two-fluid nozzle 30. As shown in FIG. 2, the nozzle drive mechanism 20 mainly includes a support arm 22, a rotation motor 23, and a lifting motor 27.

  The support arm 22 is a beam member that supports the two-fluid nozzle 30 in a cantilever shape. As shown in FIG. 2, one end of the support arm 22 is interlocked with the shaft 24 of the rotation motor 23. A two-fluid nozzle 30 is attached to the other end of the support arm 22.

  The rotation motor 23 is disposed on the elevating base 26, and its rotational driving force is transmitted to a shaft 24 extending in a substantially vertical direction. Therefore, when the rotation motor 23 is rotated, the two-fluid nozzle 30 attached to the support arm 22 swings about the shaft 24. As a result, the two-fluid nozzle 30 is movable between the standby position on the side of the anti-scattering cup 12 and the cleaning position above the substrate W held by the spin base 11.

  The elevating motor 27 is disposed below the elevating base 26, and its rotational driving force is transmitted to a ball screw 28 extending in a substantially vertical direction. The ball screw 28 is screwed with the flange 26 a of the elevating base 26. Further, a guide 29 disposed substantially parallel to the ball screw 28 is inserted through the flange 26a. Thus, when the rotational driving force of the lifting motor 27 is transmitted to the ball screw 28, the lifting base 26 is guided along the guide 29, and the two-fluid nozzle 30 is lifted.

  The two-fluid nozzle 30 is a cleaning liquid discharge nozzle that can be swung and raised and lowered by the nozzle drive mechanism 20, and can be disposed above the substrate W held by the rotation holding unit 10. The two-fluid nozzle 30 generates a mist-like mist (droplet) by mixing the pressurized gas and the liquid cleaning liquid. Thus, the two-fluid nozzle 30 can supply the generated droplets to the substrate W held by the rotation holding unit 10. Details of the configuration of the two-fluid nozzle 30 will be described later.

  The compressed air supply unit 60 supplies compressed air (gas) necessary for generating droplets to the two-fluid nozzle 30. As shown in FIG. 2, the compressed air supply unit 60 mainly includes a compressed air supply source 61 and a pipe 62.

  The piping 62 connects the two-fluid nozzle 30 and the compressed air supply source 61 in communication, and is used as a compressed air supply path. As shown in FIG. 2, the piping 62 is provided with an electropneumatic regulator 64 and a flow rate sensor 65 in order from the upstream side when viewed from the flow direction of the compressed air. The electropneumatic regulator 64 adjusts the pressure of the compressed air supplied to the two-fluid nozzle 30 side based on the pressure value detected by the pressure sensor 66. The flow sensor 65 detects the flow rate of air flowing through the pipe 62.

  The cleaning liquid supply unit 70 supplies the cleaning liquid (liquid) necessary for generating droplets to the two-fluid nozzle 30. As shown in FIG. 2, the cleaning liquid supply unit 70 mainly includes a cleaning liquid supply source 71 and a pipe 72.

  Similar to the pipe 62, the pipe 72 connects the two-fluid nozzle 30 and the cleaning liquid supply source 71 in communication, and is used as a cleaning liquid supply path. Further, as shown in FIG. 2, an electropneumatic regulator 74 and a flow rate sensor 75 are provided in the pipe 72 in order from the upstream side when viewed from the flow direction of the cleaning liquid. Similarly to the electropneumatic regulator 64, the electropneumatic regulator 74 adjusts the pressure of the cleaning liquid supplied to the two-fluid nozzle 30 side based on the pressure value detected by the pressure sensor 76. The flow sensor 75 detects the flow rate of the cleaning liquid flowing through the pipe 72.

  As described above, the flow rate and pressure of the compressed air supplied from the compressed air supply source 61 to the two-fluid nozzle 30 side are adjusted based on the flow rate value and pressure value of the compressed air detected by the flow sensor 65 and the pressure sensor 66. be able to. Similarly, the flow rate and pressure of the cleaning liquid supplied from the cleaning liquid supply source 71 to the two-fluid nozzle 30 side can be adjusted based on the flow rate value and pressure value of the cleaning liquid detected by the flow sensor 75 and the pressure sensor 76. . Therefore, it is possible to satisfactorily generate cleaning liquid droplets corresponding to the cleaning target.

  The control unit 90 realizes operation control and data processing of each component of the substrate processing apparatus 1. As shown in FIG. 2, the control unit 90 mainly includes a RAM 91, a ROM 92, and a CPU 93.

  A RAM (Random Access Memory) 91 is a volatile storage unit and can store various data. A ROM (Read Only Memory) 92 is a so-called nonvolatile storage unit, and stores, for example, a program. As the ROM 92, a flash memory which is a readable / writable nonvolatile memory may be used.

  A CPU (Central Processing Unit) 93 performs control of the supply pressure of compressed air or cleaning liquid by the electropneumatic regulators 64 and 74 and rotation control of the motors 16, 23, and 27 according to a program stored in the ROM 92. Operation control of each component and data processing are performed at a predetermined timing.

<2. Configuration of two-fluid nozzle>
FIG. 3 is a perspective view showing an example of the configuration of the two-fluid nozzle 30 in the embodiment of the present invention. 4 is a cross-sectional perspective view taken along line VV in FIG. As shown in FIGS. 3 and 4, the two-fluid nozzle 30 mainly includes flow path forming members 31 and 41, lid members 39 and 49, and a lead-out member 51.

  Here, in this embodiment, each of the members 31, 39, 41, 49, 51 of the two-fluid nozzle 30 is formed by injection molding, for example, polyetheretherketone (for example, PEEK (registered trademark)). Formed by. This polyetheretherketone is a kind of aromatic polyetherketone resin, has high heat resistance, water resistance, chemical resistance, etc., and excellent mechanical properties.

  FIG. 5 is a front perspective view showing an example of the configuration of the flow path forming member 31 (first flow path forming member). FIG. 6 is a front perspective view showing an example of the configuration of the flow path forming member 41 (second flow path forming member). FIG. 7 is a rear view showing an example of the configuration of the flow path forming member 41. FIG. 8 is a side cross-sectional view of the lead-out member 51 viewed from the line VV. Here, the configuration of each member 31, 39, 41, 49, 51 constituting the two-fluid nozzle 30 will be described with reference to FIGS.

  The flow path forming member 31 and the lid member 39 are members that mainly form a gas introduction path (first gas introduction path) supplied from the pipe 62 side. As shown in FIG. 5, the flow path forming member 31 is a block body having a substantially L-shaped cross section when viewed from the VI-VI line, and includes a thick portion 32 and a thin portion 33. . The flow path forming member 31 mainly has a sealing groove 34 and a digging portion 35. In the following description, it is assumed that the surface viewed from the step side 31a corresponds to the front surface (front surface) of the flow path forming member 31.

  As shown in FIG. 5, the sealing groove 34 is a narrow groove formed on the front surface (front surface forming surface 33 a) of the thin portion 33 and has a substantially U shape. Further, the upper end of the sealing groove 34 extends to the distal end surface 33b. Further, for example, a sealing member (not shown) for ensuring airtightness is inserted into the sealing groove 34.

  The digging portion 35 is a groove portion that is formed on the forming surface 33a on the front side of the thin portion 33 and extends in the vertical direction. As shown in FIG. 5, the upper end of the digging portion 35 extends to the distal end surface 33b. Further, the periphery of the dug portion 35 is surrounded by a sealing groove 34.

  The lid member 39 is a substantially rectangular block. As shown in FIG. 4, a through hole 39 a that penetrates the lid member 39 in the substantially Y-axis direction is provided near the center of the main surface of the lid member 39 (a surface substantially parallel to the ZX plane). Therefore, when the lid member 39 is fitted to the formation surface 33a on the front side of the thin portion 33, the through hole 39a communicates with the digging portion 35 as shown in FIG.

  Thus, when the lid member 39 is fitted to the step side 31a of the flow path forming member 31, the front opening of the dug portion 35 is closed by the main surface of the lid member 39 (see FIG. 4). Further, the periphery of the dug portion 35 is sealed by a seal member (not shown) inserted into the seal groove portion 34. Therefore, the front opening of the dug portion 35 is hermetically sealed except for the through hole 39a. As a result, the dug portion 35 whose front opening is closed serves as a gas introduction path (first gas introduction path) supplied from the compressed air supply source 61 (see FIG. 2) via the pipe 62 and the through hole 39a. To play a role. In the present embodiment, the lid member 39 is fixed to the flow path forming member 31 by, for example, screwing.

  The flow path forming member 41 and the lid member 49 are members that mainly form a gas introduction path (second gas introduction path) supplied from the pipe 62 side, similarly to the flow path formation member 31 and the lid member 39. . As shown in FIG. 6, the flow path forming member 41 is a block body having a substantially L-shaped cross section when viewed from the line VII-VII, and includes a thick part 42 and a thin part 43. Yes. The flow path forming member 41 mainly includes a sealing groove 44, a digging portion 45, a sealing groove 46, and a digging portion 47. In the following description, it is assumed that the surface viewed from the step side 41a corresponds to the front surface (front surface) of the flow path forming member 41.

  As shown in FIG. 6, the sealing groove 44 is a narrow groove formed on the front surface (front side forming surface 43 a) of the thin portion 43 and has a substantially U shape. The upper end of the sealing groove 44 extends to the distal end surface 43b. Further, for example, a sealing member (not shown) for ensuring airtightness is inserted into the sealing groove 44.

  The digging portion 45 is a groove portion that is formed on the forming surface 43a on the front side of the thin portion 43 and extends in the vertical direction. As shown in FIG. 6, the upper end of the digging portion 45 extends to the distal end surface 43b. Further, the width of the digging portion 45 (the length of the digging portion 45 in the X direction) is set to be substantially the same as the width of the digging portion 35. Further, the periphery of the digging portion 45 is surrounded by a sealing groove 44.

  As shown in FIG. 7, the sealing groove 46 is a narrow groove formed on the back surface (back surface forming surface 43 c) of the thin portion 43 and has a substantially U shape. The upper end of the sealing groove 46 extends to the distal end surface 43b. Further, for example, a sealing member (not shown) for ensuring liquid tightness is inserted into the sealing groove 46.

  The digging portion 47 is a groove portion that is formed in the forming surface 43c on the back surface side of the thin portion 43 and extends in the vertical direction. Moreover, the width D1 (substantially the length in the X direction) of the digging portion 47 is set to be smaller than the width D2 of the digging portion 45 as shown in FIG. Furthermore, in the range from the upper end of the digging portion 47 to the front end surface 43b, a concave portion 47a that is slightly recessed in the front direction is formed.

  The through-hole 48 is a hole that penetrates the thick portion 42 in the front-rear direction (substantially Y-axis direction). That is, as shown in FIGS. 4, 6, and 7, the through hole 48 reaches the bottom surface of the digging portion 47 from the front side of the thick portion 42, and the space surrounded by the digging portion 47 The space on the front side of the thick part 42 is communicated.

  The lid member 49 is a block body having substantially the same shape as the lid member 39. As shown in FIGS. 3 and 4, a through hole 49 a that penetrates the lid member 49 in the substantially Y-axis direction is provided near the center of the main surface of the lid member 49 (a surface substantially parallel to the ZX plane). . Therefore, when the lid member 49 is fitted to the formation surface 43a on the front side of the thin portion 43, the through hole 49a communicates with the digging portion 45 as shown in FIG.

  Thus, when the lid member 49 is fitted to the step side 41a of the flow path forming member 41, the front opening of the dug portion 45 is closed by the main surface of the lid member 49 (see FIG. 4). Further, the periphery of the dug portion 45 is sealed by a seal member (not shown) inserted into the seal groove portion 44. Therefore, the front opening of the dug portion 45 is hermetically sealed except for the through hole 49a. As a result, the dug portion 45 whose front opening is closed serves as a gas introduction path (second gas introduction path) supplied from the compressed air supply source 61 (see FIG. 2) via the pipe 62 and the through hole 49a. To play a role. The lid member 49 is fixed to the flow path forming member 41 by, for example, screwing, similarly to the lid member 39.

  Further, when the back surfaces of the flow path forming members 31 and 41 are brought together, the front opening of the dug portion 47 is closed by the back surface of the flow path forming member 31 (see FIG. 4). Further, the periphery of the dug portion 47 is sealed by a seal member (not shown) inserted into the seal groove portion 46. Therefore, the front opening of the sealing groove 46 is liquid-tightly sealed except for the through hole 48. As a result, the digging portion 47 whose front opening is closed serves as an introduction path (liquid introduction path) for the liquid supplied from the cleaning liquid supply source 71 (see FIG. 2) via the pipe 72 and the through hole 48. Fulfill.

  Further, when the back surfaces of the flow path forming members 31 and 41 are brought together, the back surface opening of the recess 47 a is closed by the back surface of the flow path forming member 31. That is, the concave portion 47 a whose back opening is closed functions as a liquid narrow channel 56 that communicates with the digging portion 47. Further, as shown in FIGS. 4 and 8, a substantially rectangular slit 58 having the Y-axis direction as the longitudinal direction and the X-axis direction as the width direction is formed in the vicinity of the distal end surface 43b of the recess 47a.

  Therefore, the cleaning liquid flowing through the dug portion 47 in the negative Z-axis direction is narrowed by the liquid narrow channel 56 without changing the flow direction. Then, the cleaning liquid is discharged as a thin liquid film from the slit 58 toward the substrate W side.

  Thus, in the present embodiment, the slit 58 is used as a liquid discharge port. Further, the flow path forming member 31 and the flow path forming member 41 are used as a liquid discharge portion that discharges the cleaning liquid.

  In the present embodiment, the width of the slit 58 (that is, the height from the bottom surface of the recess 47a to the formation surface 43c) is 0.05 mm or more and 1.0 mm or less (preferably 0.1 mm or more and 1.0 mm or less). ) Is set. The length of the slit 58 in the longitudinal direction (that is, the width of the digging portion 47 and the recess 47a) is set to 2 mm to 60 mm (preferably 10 mm to 20 mm).

  Further, similarly to the lid member 39, the lid member 49 is fixed to the flow path forming member 41 by, for example, screwing. The flow path forming members 31 and 41 are also fixed to each other by, for example, screwing.

  The lead-out member 51 mainly includes a gas discharge port (first gas discharge port) supplied from the flow path forming member 31 side and a gas discharge port (second gas discharge port) supplied from the flow path forming member 41 side. ).

  As shown in FIGS. 3 and 8, the lead-out member 51 includes a main body portion 52 and a flange portion 53. Further, in the lead-out member 51, the front end surface 33b side of the flow path forming member 31 and the front end surface 43b side of the flow path forming member 41 correspond to the main body portion 52, and the lid member 39 and the lid member 49 correspond to the flange portion 53, respectively. Is attached. As shown in FIG. 8, the lead-out member 51 mainly has a lead-out hole 51 a and a recess 55.

  The lead-out hole 51a is a through hole that penetrates the main surface of the lead-out member 51 from the slit 58 side toward the substrate W side. As shown in FIG. 8, the opening on the substrate W side and the opening on the slit 58 side of the lead-out hole 51a extend along the longitudinal direction of the slit 58, respectively. The length (size in the longitudinal direction (Y-axis direction)) and width (size in the width direction (X-axis direction)) of the lead-out hole 51a are gradually increased from the slit 58 side toward the substrate W side. To do. This enlargement is preferably at least 45 degrees from the surface in the liquid ejection direction (Z-axis direction).

  The recess 55 is provided on the main surface of the main body 52 on the slit 58 side, and is slightly recessed toward the substrate W side. When the lead-out member 51 is attached, the opening of the recess 55 is closed by the front end surface 33 b of the flow path forming member 31 and the front end surface 43 b of the flow path forming member 41.

  Thereby, the gas narrow flow path 57a (first gas narrow flow path) communicating with the digging portion 35 is provided on the front end surface 33b side, and the gas narrow flow path 57b (communication with the digging portion 45 is provided on the front end surface 43b side. A second gas narrow channel) is formed.

  Also, a substantially rectangular slit 59a having a longitudinal direction in the Y-axis direction and a width direction in the Z-axis direction is formed in the vicinity of the leading end of the gas narrow channel 57a on the outlet hole 51a side. Similarly, a substantially rectangular slit 59b with the Y-axis direction as the longitudinal direction and the Z-axis direction as the width direction is formed near the leading end of the gas narrow channel 57b on the outlet hole 51a side.

  Accordingly, the compressed air flowing through the digging portion 35 in the negative Z-axis direction is narrowed by the gas narrow flow path 57a, and the flow direction of the compressed air is rotated 90 degrees counterclockwise in the gas narrow flow path 57a. Changes in the positive direction of the X axis. Similarly, the compressed air flowing through the digging portion 45 in the negative Z-axis direction is narrowed by the gas narrow flow path 57b, and the compressed air flowing direction is rotated 90 degrees clockwise to the negative Z-axis direction. To the negative X-axis direction. Then, the compressed air is discharged as a narrow strip-shaped gas flow from each of the slits 59a and 59b toward the slit 58 side.

  As described above, in the present embodiment, the slits 59a and 59b are provided so as to sandwich the slit 58, and are used as first and second gas discharge ports, respectively. Further, the flow path forming member 31, the lid member 39, and the outlet member 51 serve as a first gas discharge section that discharges compressed air, and the flow path forming member 41, the lid member 49, and the outlet member 51 discharge compressed air. It is used as a second gas discharge unit that performs.

  In the present embodiment, the lengths of the slits 59 a and 59 b are set to be larger than the length of the slit 58. Thereby, the flow of the thin liquid film-like cleaning liquid discharged from the slit 58 is covered with the compressed air discharged from the slits 59a and 59b. Therefore, the generated droplets can be efficiently supplied to the substrate side.

  The widths of the slits 59a and 59b are set to 0.1 mm or more and 1.0 mm or less. The lengths of the slits 59a and 59b are set to 2 mm or more and 60 mm or less. Further, a distance D3 (see FIG. 8) from the collision position Pc to the upper surface of the substrate W is set to 3 mm or more and 30 mm or less (preferably 4 mm or more and 10 mm or less). Further, the lengths of the slits 59a and 59b are set to be smaller than the length of the lead-out hole 51a.

  Here, the droplets of the cleaning liquid from the two-fluid nozzle 30 are the narrow band-like compressed air discharged from the slits 59a and 59b and the thin liquid film-like cleaning liquid discharged from the slit 58 toward the substrate W. It is generated by colliding substantially vertically at the collision position Pc. That is, the slits 59a and 59b discharge the compressed air substantially perpendicularly to the long surface along the longitudinal direction of the slit 58 among the side surfaces of the thin liquid film-like cleaning liquid. Then, the thin liquid film of the cleaning liquid is sandwiched by compressed air from both sides and crushed.

  Thereby, the shear force from compressed air acts efficiently on the thin liquid film of the cleaning liquid. Therefore, even when the flow rate of the compressed air supplied from the compressed air supply source 61 and the flow rate of the cleaning liquid supplied from the cleaning liquid supply source 71 are the same, the generated droplet diameter can be further atomized. it can.

  9 to 11 show the results of a comparative experiment between a substrate cleaning process using the two-fluid nozzle 30 of the present embodiment and a substrate cleaning process using a conventional two-fluid nozzle (for example, Patent Document 8). It is a graph to show. Here, the superiority of the substrate cleaning process using the two-fluid nozzle 30 will be described with reference to FIGS. 9 to 11.

  FIG. 9 is a graph showing the relationship between the arithmetic average diameter DD1 (μm) of the droplet and the average velocity Vd (m / s) of the droplet. FIG. 10 is a graph showing the relationship between the Sauter average diameter DD2 of the droplet and the average velocity Vd (m / s) of the droplet. “♦” (black diamonds) in FIGS. 9 and 10 are plots of the arithmetic average diameter DD1 and Sauter average diameter DD2 of the two-fluid nozzle 30 of the present embodiment, and the average droplet velocity Vd, respectively. is there. On the other hand, “●” (black circles) in FIGS. 9 and 10 plot the arithmetic average diameter DD1 and Sauter average diameter DD2 of the conventional two-fluid nozzle and the average droplet velocity Vd, respectively.

  Here, the arithmetic average diameter means a value obtained by dividing the sum of the diameter values of each droplet by the number of droplets. The Sauter average diameter is a value obtained by dividing the cube sum of the diameter value of each droplet by the square sum of the diameter value of each droplet and the number of droplets. Therefore, with the arithmetic average diameter, the distribution of droplet diameters that is difficult to appear is confirmed with the Sauter average diameter.

  That is, in the arithmetic average diameter, when the number of droplets having a value far from the average value is small, the degree to which the small number gives the arithmetic average diameter value is difficult to see. On the other hand, in the case of the Sauter average diameter, although the number is at least the value of the diameter value is large or small, the degree given to the value of the Sauter average diameter increases. For this reason, the tendency of the average diameter appears when the dispersion of the droplet diameter is large.

  As shown in FIGS. 9 and 10, the arithmetic average diameter and the Sauter average diameter of the droplets generated by the two-fluid nozzle 30 of the present embodiment are both smaller than those of the conventional two-fluid nozzle. That is, the two-fluid nozzle 30 can atomize the droplet diameter itself as compared with the conventional two-fluid nozzle. Moreover, the diameter of the droplet produced | generated by the two-fluid nozzle 30 becomes a uniform thing compared with the conventional two-fluid nozzle.

  FIG. 11 is a graph showing the relationship between the damage number N and the removal rate PRE. The horizontal axis of FIG. 11 shows the ratio PRE (%) of particles removed by cleaning the substrate for a predetermined time for a removal rate evaluation substrate to which a predetermined number (for example, 10000) of particles have been applied in advance. . In addition, the vertical axis of FIG. 11 indicates the number N of patterns damaged by cleaning the substrate for a certain period of time on the substrate for damage evaluation on which the pattern for evaluation is formed.

  The supply amount of the cleaning liquid is set to 100 (ml / min) for both the two-fluid nozzle 30 of the present embodiment and the conventional two-fluid nozzle, and damage is caused by variously changing the supply amount of the compressed gas. Number and removal rates were measured.

  Further, “♦” (black diamond) in FIG. 11 indicates that the cleaning conditions such as the supply amount of compressed air, the supply amount of cleaning liquid, and the cleaning time are the same for the two-fluid nozzle 30 of the present embodiment. Is a plot of damage number N and removal rate PRE. On the other hand, “●” (black circle) in FIG. 11 plots the damage number N and the removal rate PRE when the cleaning conditions are the same for the conventional two-fluid nozzle.

  Further, the solid line in FIG. 11 is an approximate line obtained by approximating the plot point “♦” of the two-fluid nozzle 30 to the least square, and the broken line is an approximate line approximating the plot point “●” of the conventional two-fluid nozzle 30 by the least square. , Respectively.

  As shown in FIG. 11, in the two-fluid nozzle 30 capable of further atomizing the droplet diameter, the number of damages can be further reduced when the particle removal rate is the same.

<3. Modification>
Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments, and various modifications can be made.

  (1) Although the gas supplied to the two-fluid nozzle 30 has been described as air in the present embodiment, it is not limited to this. As the gas supplied to the two-fluid nozzle 30, for example, an inert gas such as nitrogen gas or argon gas may be employed.

  (2) Further, in the present embodiment, it has been described that both the slits 59a and 59b discharge compressed air substantially perpendicular to the liquid flow (thin liquid film) of the cleaning liquid discharged from the slit 58. However, it is not limited to this. For example, the compressed air may be discharged from at least one (one side) of the slits 59a and 59b substantially perpendicular to the liquid flow of the cleaning liquid. Also in this case, a sufficient shearing force can be applied to the liquid flow of the cleaning liquid, and the liquid droplets of the cleaning liquid can be atomized.

  (3) Furthermore, in the present embodiment, pure water, carbonated water, or ozone water is preferable as the cleaning liquid supplied to the two-fluid nozzle 30, but alcohol-based IPA (isopropyl alcohol), hydrofluoric acid, or SC1 ( It may be a chemical solution such as a mixed solution of ammonia water, hydrogen peroxide solution and water.

It is a top view which shows an example of a structure of the substrate processing system in embodiment of this invention. It is a front view which shows an example of a structure of the substrate processing apparatus in embodiment of this invention. It is a perspective view which shows an example of a structure of the two-fluid nozzle in embodiment of this invention. It is the cross-sectional perspective view seen from the VV line of FIG. It is a front perspective view which shows an example of a structure of a 1st flow path formation member. It is a front perspective view which shows an example of a structure of a 2nd flow-path formation member. It is a rear view which shows an example of a structure of a 2nd flow-path formation member. FIG. 5 is a side cross-sectional view of the vicinity of the lead-out member viewed from the line VV in FIG. 3. It is a graph which shows the relationship between the arithmetic mean diameter of a droplet, and a droplet average velocity. It is a graph which shows the relationship between the Sauter average diameter of a droplet, and a droplet average velocity. It is a graph which shows the relationship between the number of damages and a removal rate.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 10 Rotation holding part (Substrate holding means)
30 Two-fluid nozzle 31 Channel forming member (first channel forming member)
35 Digging part (first gas introduction path)
39, 49 Lid member 39a, 48, 49a Through hole 41 Flow path forming member (second flow path forming member)
45 dug section (second gas introduction path)
47 Digging part (liquid introduction path)
47a, 55 Concave part 51 Lead member 51a Lead hole 56 Liquid narrow channel 57a Gas narrow channel (first gas narrow channel)
57b Gas narrow channel (first gas narrow channel)
58 Slit (Liquid outlet)
59a Slit (first gas outlet)
59b Slit (second gas outlet)
100 substrate processing system W substrate ID indexer unit PS substrate processing unit

Claims (21)

Substrate holding means for holding the substrate;
A two-fluid nozzle for supplying droplets to the substrate held by the substrate holding means;
With
The two-fluid nozzle is
A liquid discharge part for discharging liquid from the substantially rectangular liquid discharge port toward the substrate;
First and second gas ejection units that are provided so as to sandwich the liquid ejection port and form a liquid droplet by colliding gas with the liquid ejected from the liquid ejection port;
Have
At least one of the first and second gas discharge units discharges the gas substantially perpendicularly to the liquid flow of the liquid discharged from the liquid discharge port. The substrate processing apparatus according to claim 1,
The other of the first and second gas discharge units discharges the gas substantially perpendicularly to the liquid flow from the liquid discharge port. In the substrate processing apparatus of Claim 1 or Claim 2,
The substrate processing apparatus, wherein the first and second gas discharge units discharge the gas so that the liquid flow from the liquid discharge port is covered with the gas. The substrate processing apparatus according to claim 1, wherein:
At least one of the first and second gas discharge portions discharges the gas substantially perpendicularly to a long surface along the longitudinal direction of the liquid discharge port, among the side surfaces of the liquid flow. Substrate processing apparatus. The substrate processing apparatus according to claim 1, wherein:
The substrate processing apparatus, wherein the width of the liquid discharge port is 0.1 mm or more and 1.0 mm or less. The substrate processing apparatus according to claim 1, wherein:
The length of the said liquid discharge port is 2 mm or more and 60 mm or less, The substrate processing apparatus characterized by the above-mentioned. The substrate processing apparatus according to any one of claims 1 to 6,
The substrate processing apparatus, wherein a distance from the collision position of the liquid flow and the gas to the upper surface of the substrate is 3 mm or more and 30 mm or less. A liquid discharge section for discharging liquid from a substantially rectangular liquid discharge port toward the substrate;
First and second gas ejection units that are provided so as to sandwich the liquid ejection port and form a liquid droplet by colliding gas with the liquid ejected from the liquid ejection port;
With
At least one of the first and second gas discharge units discharges the gas substantially perpendicularly to the liquid flow of the liquid discharged from the liquid discharge port. The two-fluid nozzle according to claim 8.
The other of the first and second gas discharge units discharges the gas substantially perpendicularly to the liquid flow from the liquid discharge port. The two-fluid nozzle according to claim 8 or 9,
The two-fluid nozzle, wherein the first and second gas discharge units discharge the gas so that the liquid flow from the liquid discharge port is covered with the gas. The two-fluid nozzle according to any one of claims 8 to 10,
At least one of the first and second gas discharge portions discharges the gas substantially perpendicularly to a long surface along the longitudinal direction of the liquid discharge port, among the side surfaces of the liquid flow. Two fluid nozzle. The two-fluid nozzle according to any one of claims 8 to 11,
The two-fluid nozzle according to claim 1, wherein a width of the liquid discharge port is 0.1 mm or more and 1.0 mm or less. The two-fluid nozzle according to any one of claims 8 to 12,
The two-fluid nozzle according to claim 1, wherein a length of the liquid discharge port is 2 mm or more and 60 mm or less. The two-fluid nozzle according to any one of claims 8 to 13,
The two-fluid nozzle, wherein a distance from a collision position of the liquid flow and the gas to an upper surface of the substrate is 3 mm or more and 30 mm or less. (a) holding the substrate;
(b) supplying droplets to the substrate held by the step (a);
With
The step (b)
(b-1) a step of discharging liquid from the substantially rectangular liquid discharge port toward the substrate;
(b-2) forming the droplets by colliding gas from both sides of the liquid flow of the liquid discharged from the liquid discharge port;
Have
In the step (b-2), the gas is discharged substantially perpendicularly from at least one side with respect to the liquid flow of the liquid discharged from the liquid discharge port. The substrate processing method according to claim 15, wherein
In the step (b-2), the gas is discharged substantially vertically from both sides of the liquid flow. In the substrate processing method of Claim 15 or Claim 16,
In the step (b-2), the gas is discharged so that the liquid flow from the liquid discharge port is covered with the gas. The substrate processing method according to any one of claims 15 to 17,
The step (b-2) is characterized in that the gas is discharged substantially perpendicularly to at least one side of the long surface along the longitudinal direction of the liquid discharge port among the side surfaces of the liquid flow. Substrate processing method. The substrate processing method according to any one of claims 15 to 18,
A substrate processing method, wherein the width of the liquid discharge port is 0.1 mm or more and 1.0 mm or less. In the substrate processing method in any one of Claims 15 thru | or 19,
The length of the said liquid discharge port is 2 mm or more and 60 mm or less, The substrate processing method characterized by the above-mentioned. 21. The substrate processing method according to claim 15, wherein:
A distance from the collision position of the liquid flow and the gas to the upper surface of the substrate is 3 mm to 30 mm.

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