JP2009208995A - Manufacturing apparatus for silicon - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing apparatus for silicon which is prevented from the corrosion of a reaction vessel due to a halide and has sufficient mechanical strength. <P>SOLUTION: The manufacturing apparatus for silicon is provided with an inner cylinder 4 comprising one of a halide corrosion resistant material or a silicon material and an outer cylinder 6 surrounding the inner cylinder 4 and comprising a metal, and silicon is obtained by reducing halogenated silane with the molten reducing metal inside the inner cylinder 4. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a silicon manufacturing apparatus.

  As environmental problems are highlighted, solar cells are attracting attention as a clean energy source, and demand is rapidly increasing mainly for residential use. Since silicon-based solar cells are excellent in reliability and conversion efficiency, they account for about 80% of solar power generation. However, in order to further reduce the unit price of power generation, it is desired to secure a low-cost silicon raw material.

  Currently, the Siemens method for thermally decomposing trichlorosilane is mainly used as a method for producing high-purity silicon. However, this method is said to be difficult to further reduce costs because there is a limit to the reduction in power consumption.

As an alternative to thermal decomposition, for example, Patent Document 1 listed below discloses a gaseous silicon compound having the general formula SiH _n X _4-n (wherein X represents a halogen atom and n represents an integer of 0 to 3, respectively). Has been disclosed that contacts a finely dispersed pure aluminum or Al—Si alloy molten surface. Patent Document 2 below discloses a silicon manufacturing apparatus including a reaction vessel for obtaining silicon by reacting metal particles with gaseous silicon chlorine compound.

Japanese Patent Laid-Open No. 2-64006 JP 2007-284259 A

  However, since the reaction vessel described in Patent Document 2 is made of quartz, there is a problem that the mechanical strength of the reaction vessel cannot be sufficiently secured. On the other hand, when a metal reaction vessel is used to ensure the mechanical strength of the reaction vessel, the reaction vessel is likely to be corroded by halides such as halogenated silane, reducing metal halides, and by-products. It becomes a problem.

  In order to solve the above-mentioned problems, the present invention provides a silicon production apparatus that can suppress corrosion of a reaction vessel due to halide and has sufficient mechanical strength.

  In order to achieve the above object, a silicon manufacturing apparatus of the present invention includes an inner cylinder made of at least one of a halide corrosion-resistant material or a silicon material, an outer cylinder that surrounds the inner cylinder and is made of metal, Inside the inner cylinder, silicon halide is obtained by reducing the halogenated silane with a molten reducing metal.

  In the present invention, the reduction of the halogenated silane is performed inside the inner cylinder made of the halide corrosion-resistant material, so that the halogenated silane, the halogen of the reducing metal generated by the reduction reaction, and the halogen such as a by-product are produced. Corrosion of the inner cylinder due to chemicals can be suppressed. Further, when the reduction of the halogenated silane is performed in an inner cylinder made of a silicon material, even if a part of the inner wall of the inner cylinder is worn and mixed into the product silicon, the purity of the silicon is hardly lowered. . Furthermore, since the outer cylinder does not directly contact the halide in the inner cylinder, corrosion of the outer cylinder can be suppressed. By the above, it is suppressed that the corrosion component of an inner cylinder and an outer cylinder mixes in silicon, and the purity of silicon improves.

  In addition, the present invention includes not only an inner cylinder made of a halide corrosion resistant material or a silicon material, but also an outer cylinder made of a metal having high mechanical strength. Mechanical strength (structural strength) can be improved.

  In the present invention, the halide corrosion resistant material or silicon material is preferably at least one selected from the group consisting of quartz, ceramics, carbon, and silicon. By using these materials as the halide anticorrosive material or silicon material constituting the inner cylinder, corrosion of the inner cylinder due to halide can be more reliably suppressed. In particular, when silicon is used as the material constituting the inner cylinder, the product silicon is less likely to be contaminated by impurities.

  In the present invention, the inner cylinder and the outer cylinder may be separated from each other, or the inner cylinder and the outer cylinder may be in contact with each other.

  In the said invention, when the inner cylinder and the outer cylinder are spaced apart, it is preferable that the space between the inner cylinder and the outer cylinder is maintained in an inert gas atmosphere. Thereby, it can suppress more reliably that an outer cylinder and the halide in an inner cylinder contact, and can suppress corrosion of the outer cylinder by a halide more reliably. Further, by maintaining an inert atmosphere between the inner cylinder and the outer cylinder, the oxygen concentration in the reaction field (inner cylinder) can be further reduced. Furthermore, the pressure between the inner cylinder and the outer cylinder can be made higher than the pressure inside the inner cylinder, and a pressure difference can be provided between the two. Thereby, it can suppress more reliably that the outer cylinder and the halide in an inner cylinder contact, and can suppress more reliably corrosion of the outer cylinder by a halide, and the reaction field (inside an inner cylinder) The oxygen concentration can be further reduced.

  In the said invention, when the inner cylinder and the outer cylinder are spaced apart, it is preferable that the gas flow is blocked between the inner cylinder and the outer cylinder and between the inner cylinder and the inner cylinder. Thereby, it can suppress more reliably that a metal outer cylinder and the halide in an inner cylinder contact, and can suppress more reliably corrosion of the outer cylinder by a halide.

  Moreover, in the said invention, when the inner cylinder and the outer cylinder are contacting, the mechanical strength (structural strength) of a manufacturing apparatus can be improved more. Moreover, in the said invention, when the outer cylinder and the inner cylinder are contacting, it is preferable that the inner wall of the outer cylinder is covered by the inner cylinder. Thereby, corrosion of the inner wall of the outer cylinder by halide can be suppressed more reliably.

  In the present invention, it is preferable to further include another outer cylinder that surrounds the outer cylinder and is made of metal. In other words, the present invention preferably includes a plurality of outer cylinders. Thereby, the mechanical strength (structural strength) of the manufacturing apparatus can be further improved. Further, the oxygen concentration between the outer cylinder and another outer cylinder can be reduced more than the oxygen concentration in the reaction field (inside the inner cylinder). Moreover, it is also possible to make the pressure between the outer cylinder and another outer cylinder higher than the pressure inside the outer cylinder located on the inner cylinder side, and to provide a pressure difference therebetween. As a result, the contact between another outer cylinder and the halide in the inner cylinder can be more reliably suppressed, and corrosion of the other outer cylinder due to the halide can be more reliably suppressed, and the reaction field (inner The oxygen concentration in the cylinder) can be further reduced.

  In the present invention, the outer cylinder and the other outer cylinder may be separated from each other, or the outer cylinder and the other outer cylinder may be in contact with each other. In addition, when the outer cylinder and another outer cylinder are spaced apart, an inert gas can be interposed between the outer cylinder and another outer cylinder. Thereby, it can suppress more reliably that another outer cylinder contacts the halide in an inner cylinder, and can suppress the corrosion of another outer cylinder by a halide reliably.

  In the present invention, the reducing metal is preferably aluminum, and the halogenated silane is preferably tetrachlorosilane. By making these react in the inner wall of the apparatus of the present invention, it becomes easy to obtain high-purity silicon.

  ADVANTAGE OF THE INVENTION According to this invention, while being able to suppress the corrosion of the reaction container by a halide, the silicon manufacturing apparatus which has sufficient mechanical strength can be provided.

  Hereinafter, a silicon manufacturing apparatus and operating conditions thereof according to a preferred embodiment of the present invention will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals, and redundant description is omitted. Further, the positional relationship such as up, down, left and right is based on the positional relationship shown in the drawings unless otherwise specified. Further, the dimensional ratios in the drawings are not limited to the illustrated ratios.

  A silicon production apparatus 10 shown in FIG. 1 includes a molten metal storage unit 1, a molten metal injection unit 2, a reactor 3, solid-gas separators 5a and 5b, and pipes connected to these (hereinafter referred to as “lines” in some cases). .) Etc.

  The reactor 3 includes an inner cylinder 4 extending in the vertical direction, an outer cylinder 6 surrounding the inner cylinder 4, and a silicon collection unit 8. The inner cylinder 4 is made of a halide corrosion resistant material, and the outer cylinder 6 is made of a metal. FIG. 1 is a schematic cross-sectional view of the manufacturing apparatus 10 cut along the major axis direction of the inner cylinder 4 and the outer cylinder 6. The inner cylinder 4 may be made of a silicon material such as high-purity silicon instead of the halide corrosion-resistant material. Thereby, silicon as a product is hardly contaminated by impurities. Moreover, you may comprise the inner cylinder 4 using both a halide corrosion-resistant material and a silicon material.

In the silicon manufacturing apparatus 10, fine droplets P of molten aluminum formed by spraying atomized gas on molten aluminum (reducible metal) are ejected from the molten metal ejection unit 2 to the inside of the inner cylinder 4. Further, tetrachlorosilane (SiCl ₄ ), which is a kind of halogenated silane, is supplied from the line 14 to the inside of the inner cylinder 4. Then, by bringing the molten aluminum micro droplets P and tetrachlorosilane (gas) into contact with each other inside the inner cylinder 4, the reduction reaction represented by the following formula (A) proceeds to produce silicon particles. That is, a reaction field in which a reaction represented by the following formula (A) proceeds is formed inside the inner cylinder 4. Further, neither tetrachlorosilane nor microdroplets P are supplied between the inner cylinder 4 and the outer cylinder 6.

  In this embodiment, tetrachlorosilane is reduced inside the inner cylinder 4 made of a halide corrosion-resistant material, so that the inner cylinder made of chloride such as tetrachlorosilane or aluminum chloride and by-products generated by the reduction reaction is used. 4 corrosion can be suppressed. Moreover, since the outer cylinder 6 does not contact the chloride in the inner cylinder 4 directly, corrosion (oxidation) of the metal component of the outer cylinder 6 by chloride can also be suppressed. Therefore, it is suppressed that the corrosion component of the inner cylinder 4 and the outer cylinder 6 mixes in the silicon particle which is a product, and the purity of the silicon particle is improved.

  Moreover, in this embodiment, since not only the inner cylinder 4 made of a halide corrosion resistant material but also the outer cylinder 6 made of a metal having high mechanical strength, the manufacturing apparatus 10 is compared with a manufacturing apparatus that does not have the outer cylinder 6. The mechanical strength (structural strength) of can be improved.

The halide corrosion resistant material constituting the inner cylinder 4 is preferably at least one selected from the group consisting of quartz, ceramics, and carbon. As quartz, it is preferable to use quartz glass. As the ceramic, it is preferable to use Al ₂ O ₃ , AlN, Si ₃ N ₄ , SiC, sialon, mullite, SiC / Si (silicon carbide treated with silicon). As carbon, it is preferable to use graphite. A plurality of the above-mentioned halide corrosion resistant materials may be used in combination.

  By configuring the inner cylinder 4 with the halide corrosion-resistant material, corrosion of the inner cylinder 4 due to chloride can be more reliably suppressed.

  The inner cylinder 4 and the outer cylinder 6 are separated from each other, and gas flow is blocked between the inner cylinder 4 and the outer cylinder 6 and between the inner cylinder 4 and the inner cylinder 4. That is, the manufacturing apparatus 10 has a structure in which the space between the inner cylinder 4 and the outer cylinder 6 and the space inside the inner cylinder 4 are blocked. Thereby, it can suppress more reliably that the metal outer cylinder 6 and the chloride in the inner cylinder 4 contact, and can suppress more reliably the corrosion of the outer cylinder 6 by a chloride.

  An inert gas supplied from a line 16 flows between the inner cylinder 4 and the outer cylinder 6. Thereby, the space between the inner wall of the outer cylinder 6 and the outer wall of the inner cylinder 4 is sealed with the inert gas, and the space between the inner cylinder 4 and the outer cylinder 6 is maintained in an inert gas atmosphere. Therefore, it can suppress more reliably that the outer cylinder 6 and the chloride in the inner cylinder 4 contact, it can suppress more reliably the corrosion of the outer cylinder 6 by a chloride, and reaction field (inner cylinder 4). The inner oxygen concentration can be further reduced. In addition, the pressure between the inner cylinder 4 and the outer cylinder 6 may be made higher than the pressure inside the inner cylinder 4, and a pressure difference may be provided between them. Thereby, it can suppress more reliably that the outer cylinder 6 and the halide in the inner cylinder 4 contact, and it can suppress more reliably the corrosion of the outer cylinder 6 by a halide, and reaction field (inner cylinder) 4)) can be further reduced. Note that nitrogen, argon, or helium can be used as the inert gas.

  The molten metal accommodating part 1 is for accommodating molten aluminum. A heater 11 is provided around the molten metal container 1 so that the temperature of the molten aluminum to be accommodated can be adjusted. Moreover, you may pressurize the molten metal accommodating part 1. FIG. Thereby, molten aluminum can flow down more stably.

  The temperature in the molten metal container 1 may be set as appropriate according to the melting point of the metal to be melted. However, when aluminum (melting point: 660 ° C.) is used as the reducing metal as in this embodiment, the temperature is 700. It is preferably ˜1300 ° C., more preferably 700 to 1200 ° C., and still more preferably 700 to 1000 ° C.

  The purity of the molten aluminum is preferably 99.9% by mass or more, more preferably 99.99% by mass or more, and further preferably 99.995% by mass or more. By using high-purity molten aluminum, high-purity silicon particles can be obtained. The purity of molten aluminum here refers to the content (mass%) of Fe, Cu, Ga, Ti, Ni, Na, Mg, and Zn among the elements measured by glow discharge mass spectrometry of raw material aluminum. ) Is subtracted from 100% by mass.

  In the molten metal injection unit 2, the atomized gas supplied through the line 12 is sprayed onto the molten aluminum supplied from the molten metal storage unit 1 to form the molten aluminum microdroplets P. Injected into the inner cylinder 4.

  As a specific method for forming the fine droplets P, a free fall method in which an atomized gas is blown into a molten aluminum stream flowing down from the molten metal container 1 or a molten aluminum supply port and an atomized gas supply port are close to each other. A so-called confined method (Close-Coupled method) using an apparatus having an atomizing mechanism provided in the above manner can be used. Also, a so-called Updraft atomizer device may be used to discharge molten aluminum upward. When molten aluminum is discharged upward or downward, tetrachlorosilane gas may be supplied in the same direction as the direction in which the molten aluminum moves, and it faces the direction in which the molten aluminum moves. Then, the tetrachlorosilane gas may be supplied countercurrently. Note that the atomized gas may be a liquid or a supercritical fluid depending on the temperature condition and the pressure condition before being discharged from a supply port such as a nozzle.

  As the atomizing gas, it is preferable to use an inert gas such as argon and / or helium. The purity of the inert gas used as the atomizing gas is preferably 99.9% by volume or more, more preferably 99.99% by volume or more from the viewpoint of obtaining high-purity silicon particles, and 99.999. More preferably, it is at least volume%, particularly preferably at least 99.9995 volume%.

  From the viewpoint of obtaining high-purity silicon particles, the tetrachlorosilane used in the reaction preferably has a purity of 99.99% by mass or more, more preferably 99.999% by mass or more, and 99.9999% by mass. % Or more is more preferable.

  A heater 13 is provided around the reactor 3 so that the temperature of the reaction field can be adjusted. The reaction field heating method is not particularly limited. For example, in addition to a direct method using high-frequency heating, resistance heating, lamp heating, or the like, a method using a fluid such as a gas whose temperature is adjusted in advance is also employed. be able to. The temperature of the reaction field is usually adjusted to preferably 300 to 1200 ° C, more preferably 500 to 1000 ° C. Moreover, the pressure in the reaction field is usually adjusted to be 1 atm or higher.

  The oxygen concentration in the reaction field is preferably maintained as low as possible from the viewpoint of sufficiently suppressing the formation of oxides. Specifically, the oxygen concentration in the reaction field before starting the reaction is preferably 1% by volume or less, more preferably 0.1% by volume or less, and still more preferably 100% by volume or less. It is particularly preferably 10 ppm by volume or less. It is also possible to spray the molten aluminum for a predetermined time in advance and adsorb the oxygen in the reaction field to the molten aluminum to lower the oxygen concentration in the reaction field.

  The dew point of the reaction field before starting the reaction is preferably −20 ° C. or lower, more preferably −40 ° C. or lower, and further preferably −70 ° C. or lower.

  In addition, the oxygen concentration in the reaction field is preferably maintained as low as possible from the viewpoint of sufficiently suppressing the formation of oxides even during the reaction. Specifically, the oxygen concentration in the reaction field during the reaction is preferably 1% by volume or less, more preferably 0.1% by volume or less, still more preferably 100% by volume or less. It is particularly preferable that the volume be ppm or less.

The silicon collection part 8 located in the lower part of the reactor 3 has a smaller inner diameter as it goes downward, and has a Si particle discharge port 8c for discharging silicon particles at the lower end thereof. A gas discharge port 8b for discharging AlCl ₃ (gas) generated by the reaction and unreacted SiCl ₄ (gas) is provided at a substantially intermediate position in the vertical direction of the silicon collecting portion 8.

The silicon collector 8 functions as a first-stage solid-gas separator. That is, a heater (not shown) is provided around the silicon collection unit 8 so that the temperature inside the silicon collection unit 8 can be adjusted, and the temperature inside the silicon collection unit 8 is changed to AlCl. ₃ (Sublimation point: 180 ° C.) is maintained at a temperature at which precipitation does not occur, whereby silicon particles and gas are separated. Specifically, it is preferable to adjust the temperature inside the silicon collection part 8 to be 200 ° C. or higher. When the temperature inside the silicon collection unit 8 is lower than 200 ° C., AlCl ₃ tends to precipitate in the silicon collection unit 8 and easily mix into silicon particles.

  The gas discharged from the gas discharge port 8b is supplied to the solid-gas separator 5a. The solid gas separator 5a functions as a second stage solid gas separator. The solid-gas separator 5a is for separating silicon particles remaining in the gas discharged from the gas discharge port 8b. It is preferable to adjust the temperature inside the solid-gas separator 5a to be 200 ° C. or higher. As a suitable example of the solid gas separator 5a, a heat insulation cyclone type solid gas separator can be exemplified.

The gas discharged from the solid gas separator 5a is supplied to the solid gas separator 5b. The solid gas separator 5b functions as a third-stage solid gas separator. The solid gas separator 5b is for removing AlCl ₃ contained in the gas from the solid gas separator 5a. By maintaining the temperature in the solid-gas separator 5b at a temperature at which AlCl ₃ precipitates but SiCl ₄ (boiling point: 57 ° C.) does not condense, the precipitated AlCl ₃ (solid) is removed. Specifically, the temperature inside the solid-gas separator 5b is preferably maintained at 60 to 170 ° C. (more preferably 70 to 100 ° C.). When the temperature inside the solid-gas separator 5b is lower than 60 ° C., SiCl ₄ is condensed in the solid-gas separator 5b, and the amount of recycled SiCl ₄ gas tends to be insufficient. On the other hand, if it is higher than 170 ° C. The temperature of the interior of the solid-gas separator 5b, precipitation of AlCl ₃ becomes insufficient, there is a tendency that the content is increased in the AlCl ₃ of SiCl ₄ gas to be recycled.

The solid-gas separator 5b preferably includes a baffle plate (not shown) therein. By providing the baffle plate inside, the inner surface area of the solid-gas separator 5b is increased, AlCl ₃ is efficiently precipitated, and the content of AlCl ₃ in the gas can be sufficiently reduced. The internal surface area of the solid-gas separator 5b is preferably 5 times or more the device surface area of the solid-gas separator 5b.

The gas from which AlCl ₃ is removed in the solid-gas separator 5 b is discharged from the solid-gas separator 5 b through the line 15. When the unreacted tetrachlorosilane gas and the inert gas coexist in the gas, the tetrachlorosilane gas can be recovered by separating the inert gas and performing purification as necessary. This tetrachlorosilane gas may be recycled as a reactive gas. The separated inert gas may also be recycled.

  Thus, the reaction apparatus 10 according to the present embodiment includes the silicon collector 8 as the first-stage solid-gas separator, and includes the solid-gas separator 5a as the second-stage solid-gas separator, Further, a solid-gas separator 5b is provided as a third-stage solid-gas separator. By adopting such a configuration, unreacted tetrachlorosilane gas can be efficiently recovered and reused. For example, it can be reused as part of the atomized gas. The number of stages of the solid-gas separator is not particularly limited. For example, the silicon collector 8 and the solid-gas separator 5b may be connected without using the solid-gas separator 5a, Four or more stages of separators may be provided. Further, the solid gas separator 5a may be connected to the Si particle discharge port 8c instead of the gas discharge port 8b.

  The preferred embodiment of the present invention has been described in detail above, but the present invention is not limited to the above embodiment.

  For example, as shown in FIG. 2, the silicon manufacturing apparatus 20 may further include another outer cylinder 6a that surrounds the outer cylinder 6 and is made of metal. That is, this can further improve the mechanical strength (structural strength) of the manufacturing apparatus 20. The silicon manufacturing apparatus 20 may include a plurality of outer cylinders as well as two outer cylinders.

  2, the outer cylinder 6 and the outer cylinder 6a are separated from each other, and the inert gas supplied from the line 16 flows between the outer cylinder 6 and another outer cylinder 6a. ing. Thereby, the outer cylinder 6a can be more reliably suppressed from coming into contact with the halide in the inner cylinder 4, and corrosion of the outer cylinder 6a by the halide can be reliably suppressed, and the reaction field (inside the inner cylinder 4) ) Can be further reduced. Moreover, the pressure between the outer cylinder 6 and the outer cylinder 6a may be made higher than the pressure inside the outer cylinder 6 to provide a pressure difference therebetween. Thereby, it can suppress more reliably that another outer cylinder 6a and the halide in the inner cylinder 4 contact, can suppress more reliably corrosion of the outer cylinder 6a by a halide, and reaction field ( The oxygen concentration in the inner cylinder 4 can be further reduced.

  As shown in FIG. 3, the inner cylinder 4 and the outer cylinder 6 may be in contact with each other, and the inner wall of the outer cylinder 6 may be covered with the inner cylinder 4. Thereby, corrosion of the inner wall of the outer cylinder 6 by a halide can be suppressed more reliably. Moreover, since the inner cylinder 4 and the outer cylinder 6 are in contact with each other and are in close contact with each other, the mechanical strength (structural strength) of the manufacturing apparatus 20 can be further improved. As shown in FIG. 4, the silicon manufacturing apparatus 40 may further include another outer cylinder 6 a that surrounds the inner cylinder 4 and the outer cylinder 6.

Moreover, in the said embodiment, although the case where tetrachlorosilane was used as a halogenated silane was illustrated, it is not limited to this, In the halogenated silane shown by following formula (1), things other than tetrachlorosilane are used independently. Or two or more halogenated silanes represented by the following formula (1) may be used in appropriate combination.
SiH _n X _4-n (1)
[Wherein n is an integer of 0 to 3; X represents an atom selected from the group consisting of F, Cl, Br and I, respectively. When n is 0 to 2, X may be the same or different. ]

  Moreover, in the said embodiment, although the case where aluminum was used as a reducing metal was illustrated, it is not limited to this, One type selected from the group which consists of sodium, potassium, magnesium, calcium, and zinc is used independently. Alternatively, two or more selected from the group consisting of sodium, potassium, magnesium, calcium, zinc and aluminum may be used in appropriate combination. An aluminum-silicon alloy may be used as the reducing metal.

It is a schematic block diagram which shows the structure of the manufacturing apparatus of the silicon | silicone which concerns on one Embodiment of this invention. It is a schematic block diagram which shows the structure of the manufacturing apparatus of the silicon | silicone which concerns on other embodiment of this invention. It is a schematic block diagram which shows the structure of the manufacturing apparatus of the silicon | silicone which concerns on other embodiment of this invention. It is a schematic block diagram which shows the structure of the manufacturing apparatus of the silicon | silicone which concerns on other embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Molten metal accommodating part, 2 ... Molten metal injection part, 3 ... Reactor, 4 ... Inner cylinder, 5a, 5b ... Solid-gas separator, 6, 6a ... Out Cylinder, 8 ... Silicon collection part, 8a ... Si particle discharge port, 8b ... Gas discharge port, 10, 20, 30, 40 ... Manufacturing equipment, 13 ... Heater, P .. Fine droplets of molten reducing metal.

Claims (10)

An inner cylinder made of at least one of a halide corrosion-resistant material or a silicon material;
Surrounding the inner cylinder, and comprising an outer cylinder made of metal,
A silicon manufacturing apparatus for obtaining silicon by reducing halogenated silane with a molten reducing metal inside the inner cylinder.   The silicon manufacturing apparatus according to claim 1, wherein the inner cylinder and the outer cylinder are separated from each other.   The silicon manufacturing apparatus according to claim 2, wherein gas flow is blocked between the inner cylinder and the outer cylinder and between the inner cylinder and the inner cylinder.   The silicon manufacturing apparatus according to claim 2, wherein a space between the inner cylinder and the outer cylinder is maintained in an inert gas atmosphere.   The silicon manufacturing apparatus according to claim 1, wherein the outer cylinder and the inner cylinder are in contact with each other.   The silicon manufacturing apparatus according to claim 1, further comprising another outer cylinder made of metal that surrounds the outer cylinder.   The silicon manufacturing apparatus according to claim 6, wherein the outer cylinder and the another outer cylinder are separated from each other.   The silicon manufacturing apparatus according to any one of claims 1 to 7, wherein the halide corrosion-resistant material or the silicon material is at least one selected from the group consisting of quartz, ceramics, carbon, and silicon.   The silicon manufacturing apparatus according to claim 1, wherein the reducing metal is aluminum. The silicon production apparatus according to claim 1, wherein the halogenated silane is tetrachlorosilane.

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