JP2009201136A - Radio frequency power amplifier module - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a radio frequency power amplifier of multi-stage amplifying method that is designed to reduce instability of output power caused by electromagnetic coupling of bias supply terminals and interconnections of each stage, and also to reduce distortion of output power caused by electromagnetic coupling of bias supply terminals and interconnections of each stage so as to thereby provide high efficiency. <P>SOLUTION: A radio frequency power amplifier module comprises: a first interconnection 50 connected to a terminal 40 for supplying a voltage for collector driving to a power amplifying transistor 10, 11; a second interconnection 60 connected to a terminal 41 for supplying a voltage for collector driving to a second transistor 12, 13 controlling a base bias voltage of the transistor 10, 11; and one or more shield ground parts 70, wherein the first interconnection and the second interconnection are separated by the one or more shield ground parts 70 to thereby reduce interference between circuits via a power supply line in the radio frequency power amplifier. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a high-frequency power amplifier used in a mobile phone terminal for mobile communication, and more particularly to a power supply method for reducing mutual interference between circuits via a power line.

  In recent years, the necessity for miniaturization and weight reduction of mobile terminals for mobile communication typified by mobile phones has increased, and research and development for that purpose has been vigorously conducted. A high-frequency power amplifier circuit for transmission used in a conventional mobile communication portable terminal requires a negative power source or a negative power source generation circuit, has many components, and does not meet the demand for miniaturization and weight reduction. Therefore, a gallium arsenide compound semiconductor heterojunction bipolar transistor (hereinafter abbreviated as GaAsHBT) that can operate as a single positive power source and has excellent high frequency characteristics is promising as an amplifying element used in a transmission high-frequency power amplifier. .

  FIG. 12 shows a configuration diagram of a high-frequency power amplifier disclosed in Patent Document 1 (Japanese Patent Laid-Open No. 10-75130) as an example of a conventional high-frequency power amplifier using GaAsHBT. The high-frequency power amplifier includes an input matching circuit 401, a power amplification transistor 410, an output matching circuit 402, and a base bias control circuit 403 for the power amplification transistor. The base bias control circuit 403 includes a transistor 411 and resistors 420 and 421. Reference numeral 430 is a power source for driving the collectors of the two transistors 410 and 411, and reference numeral 431 is a gain control power source for controlling the gain of the high-frequency power amplifier. The power amplifier amplifies the power via the base bias control circuit. Applied to the base of the transistor. The base bias control circuit reduces the gain control current Iapc to be supplied from the gain control power supply by substantially supplying the base current Ibb of the power amplification transistor from the collector driving power supply, and the gain control voltage Is generally used to reduce the current supply capability required for the external control circuit for generating the.

In addition, in saturation amplifiers that are compatible with the GSM (Global System for Mobile Communication) system, which is widely used mainly in Europe, the relationship between the output power and the power-added efficiency trade-off is a major issue in the development of high-frequency power amplifiers. is there.
Furthermore, in the linear amplifier corresponding to the W-CDMA (Wide Code Division Multiple Access) system, which is one of the third generation mobile communication systems, in addition to the trade-off relationship between output power and power added efficiency, distortion and power added efficiency Are in a trade-off relationship, and are described in, for example, Non-Patent Document 1 (Electronic Technology June, 2000, page 36, published by Nikkan Kogyo Shimbun).
Therefore, in the linear amplifier, the reduction of distortion directly leads to an improvement in power added efficiency of the high frequency power amplifier, and in turn leads to an improvement in performance of the high frequency power amplifier.

JP-A-10-75130

36 pages of June 2000 issue of electronic technology published by Nikkan Kogyo Shimbun.

  In the conventional high-frequency power amplifier, the collector driving power source of the transistor constituting the base bias control circuit and the collector driving power source of the power amplifying transistor are commonly used, and the power amplifying transistor having the collector current Icc is used. There is no capacity for blocking high-frequency fluctuations due to the output power of, for example, a capacity for coupling between the collector line and the ground. Accordingly, the high-frequency fluctuation of the collector current Icc is fed back to the base current Ibb of the power amplification transistor via the base bias control circuit, which causes the operation of the high-frequency power amplifier to become unstable.

  Furthermore, since the high-frequency fluctuation of the collector current Icc is fed back to the base current Ibb of the power amplification transistor via the base bias control circuit, it becomes a factor that increases distortion in the output power of the high-frequency power amplifier. .

  An object of the present invention is to reduce instability of output power caused by electromagnetic coupling between bias supply terminals and wirings of each stage in a multi-stage amplification type high-frequency power amplifier, and thus high-frequency power having a stable operation. It is to provide an amplifier.

  Another object of the present invention is to reduce distortion of output power caused by electromagnetic coupling between bias supply terminals and wirings in each stage in a multi-stage amplification type high-frequency power amplifier, thereby having high efficiency characteristics. It is to provide a high frequency power amplifier.

  The object is to control the first terminal for supplying a collector driving voltage to the first transistor for power amplification and the base bias of the first transistor in the high frequency power amplifier according to any one of claims 1 to 5. A second terminal for supplying a collector driving voltage to a second transistor; the first wiring for coupling the first terminal and the collector of the first transistor; the second terminal; The second wiring for coupling the collector of the second transistor and one or more shield ground members are provided, and the first terminal and the second terminal are separated by the one or more shield ground members. Further, this can be achieved by separating the first wiring and the second wiring from one or more shield grounding members.

  According to the present invention, high-frequency fluctuations in the current and voltage of the driving power supply line in the high-frequency power amplifier are suppressed, and an effect of stabilizing the operation of the high-frequency power amplifier can be obtained. Furthermore, when the high frequency power amplifier of the present invention is applied to a linear amplifier, distortion of output power with respect to input power can be reduced, and there is an effect of improving the efficiency of the high frequency power amplifier.

The circuit block diagram of the high frequency power amplifier which implement | achieves Example 1 and Example 2 of this invention. The board | substrate layer block diagram in Example 1 of this invention. The schematic diagram of the surface conductor layer in Example 1 of this invention. The schematic diagram of the back surface conductor layer in Example 1 of this invention. The principal part perspective view in Example 1 of this invention. The relationship between the width | variety of the shield grounding member in the Example of this invention, and the isolation between circuits. The schematic diagram of the board | substrate layer structure in Example 2 of this invention. The schematic diagram of the surface conductor layer in Example 2 of this invention. The schematic diagram of the 1st inner-layer conductor layer in Example 2 of this invention. The schematic diagram of the 2nd inner-layer conductor layer in Example 2 of this invention. The principal part perspective view in Example 2 of this invention. The circuit block diagram of the conventional high frequency power amplifier. The principal part perspective view of the high frequency power amplifier of the present invention. Measured value of distortion of output power of linear amplifier.

Hereinafter, the present invention will be described in more detail with reference to examples. In order to facilitate understanding, description will be made with reference to the drawings.
<Example 1>
FIG. 1 shows a high frequency power amplifier circuit configuration of the first embodiment. The high-frequency power amplifier includes an input matching circuit 1, a power amplification input stage transistor 10, an interstage matching circuit 2, a power amplification output stage transistor 11, an output matching circuit 3, and the bases of the transistors 10 and 11. The base bias control circuit 20 in this circuit is composed of transistors 12 and 13 and resistors 30 and 31. The high frequency power amplifier supplies a collector driving voltage to the first terminal 40 for supplying a collector driving voltage to the output stage transistor 11 and the transistors 12 and 13 constituting the base bias control circuit 20. A second terminal 41; a third terminal 42 for supplying a gain control current voltage to the transistors 12 and 13 constituting the base bias control circuit; and a signal input terminal 43 for inputting a signal to the base of the input stage transistor 10. A signal output terminal 44 for extracting a signal from the collector of the output stage transistor 11 via the output matching circuit 3, the first terminal 40 and the collector of the output stage transistor 11 via the output matching circuit 3. The first wiring 50, the second terminal 41, and the transistor constituting the base bias control circuit. And the second wiring 60 that couples the collector of Star 11, ground metal plane (hereinafter, referred to as the shield grounding member) having 70. Further, the first terminal 40 and the second terminal 41 are separated by one or more shield ground members 70, and the first wiring 50 and the second wiring 60 are also one or more shield ground members. 70 separated by 70. Here, the shield ground member is made of a conductive film, and is formed on the dielectric plate by, for example, metal vapor deposition or sputtering. Alternatively, a method of coating a conductive material on a dielectric may be used. A member such as a metal plate can also be used.

  FIG. 2 shows a module (substrate layer) configuration when the circuit of FIG. 1 is embodied. The substrate includes a front surface conductor layer 200, a back surface conductor layer 201, and a dielectric plate 100. The conductor layer is mainly composed of, for example, copper or gold, and the dielectric plate is composed mainly of, for example, ceramic or resin.

FIG. 3 is a schematic diagram of the front conductor layer 200, FIG. 4 is a schematic diagram of the back conductor layer 201, and FIG.
In FIG. 3, 1 is the input matching circuit, 2 is the interstage matching circuit, 3 is the output matching circuit, 10 is the input stage transistor, 11 is the output stage transistor, 20 is the power amplification transistor 10, 11 base bias control circuit, 12 and 13 are transistors constituting the base bias control circuit, 30 and 31 are resistors included in the base bias control circuit, 50 is the first wiring, and 60 is the second wiring. 110 is a first shield grounding member that separates the first wiring 50 and the second wiring 60, 100 is a dielectric plate, and 101a to 101f are through holes (hereinafter referred to as the through holes) for connecting the conductor layers as shown in FIG. Referred to as a through hole).

  The power amplification transistors 10 and 11 and the base bias control circuit 20 are formed on the same or separate semiconductor elements and mounted on the surface conductor layer. In particular, the power amplification transistors 10 and 11 are formed on a semiconductor element containing GaAs as a main component.

  In FIG. 4, 40 is the first terminal, 41 is the second terminal, 42 is the third terminal, 43 is the signal input terminal, 44 is the signal output terminal, and 120 is the first terminal 40. And a second shield grounding member that separates the second terminal 41 from the second shield 41.

  In FIG. 5, reference numeral 520 denotes a semiconductor element on which the base bias control circuit 20 is mounted.

  The present invention is characterized by having a module structure as shown in FIGS. Examples of the module configuration are shown below. That is, the base of the input stage transistor 10 is connected to the signal input terminal 43 through the input matching circuit 1 and the through hole 101e, and the collector of the output stage transistor 11 is connected through the output matching circuit 3 and the through hole 101f. Are connected to the signal output terminal 44 and simultaneously connected to the first terminal 40 through the output matching circuit 3, the first wiring 50 and the through hole 101d, and constitute the base bias control circuit. , 13 are connected to the third terminal 42 through the through hole 101a, and the collectors of the transistors 12, 13 are connected to the second terminal 41 through the second wiring 60 and the through hole 101b. Is done. The first shield grounding member 110 is connected to the second shield grounding member 120 through one or more through holes 101c, and the second shield grounding member 120 is grounded to a motherboard or the like. Features.

  Next, the operation of the first embodiment of the high frequency power amplifier according to the present invention will be described with reference to the drawings. In FIG. 1, a signal input from the signal input terminal 43 is input to the input matching circuit 1, the input stage transistor 10, the interstage matching circuit 2, the output stage transistor 11, and the output matching circuit 3. Through the signal output terminal 44. The base bias control circuit 20 supplies the base currents Ibb1 and Ibb2 of the power amplification transistors 10 and 11 substantially from the collector current Icc3 from the second terminal 41, so that the gain to be supplied from the gain control power supply. This is used to reduce the control current Iapc and reduce the current supply capability required for the external control circuit that generates the gain control voltage. For example, by using the transistor 12 that drives the base of the input stage transistor 10, the reduction amount of the gain control current Iapc to be supplied from the gain control power supply is substantially inversely proportional to the amplification factor of the transistor 12 for base driving. Since the current amplification factor of the normal transistor is 10 or more, it can be reduced to at least 1/10 compared with the case where the transistor 12 for base driving is not used. Accordingly, at least 90% or more of the base drive current Ibb1 of the first stage transistor for power amplification can be obtained by amplifying the collector current Icc. The same applies to the operation of the transistor 13 for driving the base of the output stage transistor 11.

  1, 5, and 11, the shield ground members 70, 110, 130, and 140 are connected to the second shield ground member 120 through one or more through holes, and the second shield ground member is Since it is grounded to the mother board or the like, all the shield ground members 70, 110, 120, 130, and 140 have zero potential. The high-frequency power amplifier of the present invention is operated at a frequency of 900 MHz with a power supply voltage of 3.5 V, for example, and the output power of the output stage transistor 11 is set at 35 dBm, for example. At this time, the voltage amplitude at the collector of the output stage transistor 11 is about 15 V, and the current and voltage of the first wiring 50 fluctuate due to the influence of the high frequency output power. Usually, a capacitive element of several μF is provided on the power supply line formed on the mother board or the like so as to be electrically connected to the collector driving power supply and each of the first and second terminals provided on the module. The high-frequency fluctuation is not propagated to the collector driving power source or other power source line.

  However, inside the substrate, the size is small, and a capacitive element is generally arranged between the collector driving voltage supply line of the input stage transistor 10 and the output stage transistor 11 formed on the module and the ground, and the high frequency. Although the influence of the collector driving voltage supply line on the circuit system is reduced as much as possible (not shown), the above-mentioned several μF capacitive element used for a motherboard or the like is difficult to use because of its large component size. Is less than 100 nF. Therefore, high-frequency fluctuations in the current and voltage of the first wiring 50 propagate to the base bias control circuit 20 through the second wiring 60.

FIG. 6 shows a three-dimensional electromagnetic field simulation result when an alumina ceramic substrate is used as the dielectric plate. The figure shows the width of the first shield grounding member (or ground metal surface) 110 inserted between the first wiring 50 and the second wiring 60, the first wiring 50 and the second wiring 60. The relationship of the amount of isolation between is shown.
However, in the simulation, the distance between the first wiring 50 and the first shield grounding member 110 and the distance between the second wiring 60 and the first shield grounding member 110 are the same as those in the case of manufacturing a high-frequency module. The minimum dimension of 0.1 mm was a constant.

  As shown in FIG. 6, when there is no first shield grounding member, the amount of isolation is about −30 dB, which is insufficient for the output power of 35 dBm. Therefore, as described in the operation of the base bias control circuit, the base current Ibb2 of the output stage transistor 11 is substantially the collector current of the fourth transistor 13 from the second terminal 41 through the second wiring 60. Since the current is supplied from Icc3, the high-frequency fluctuation of the current and voltage in the second wiring 60 becomes the fluctuation of the base current Ibb2 of the output stage transistor 11. When the base current fluctuates at a high frequency, the operation of the transistor generally becomes unstable, and as a result, the operation of the high frequency power amplifier becomes unstable.

  However, the high-frequency power amplifier according to the present invention has the first terminal 40 and the first wiring 50 for supplying the collector driving voltage to the output stage transistor for power amplification and the base bias control as described in the structure. The second terminal 41 and the second wiring 60 for supplying a collector driving voltage to the transistors 12 and 13 constituting the circuit are separately provided, and then the first wiring 50 and the second wiring are further provided. The first shield grounding member 110 is provided between the first terminal 40 and the second terminal 41, and the second shield grounding member 120 is also provided between the first terminal 40 and the second terminal 41. By setting the width of the first shield grounding member 110 and the second shield grounding member 120 to 0.2 mm or more, an isolation amount of −50 dB or less can be obtained.

  As a result, the high-frequency fluctuations of the current and voltage do not propagate from the first wiring 50 to the second wiring 60 and from the first terminal 40 to the second terminal 41. The above problems can be solved by stabilizing the base currents Ibb1 and Ibb2 of the power amplification transistors 10 and 11 constituting the above and further stabilizing the operation of the power amplification transistors 10 and 11.

<Example 2>
The second embodiment of the present invention will be described below with reference to the drawings. The high frequency power amplifier circuit configuration of the second embodiment is the same as that of FIG. 1 used in the first embodiment.

  FIG. 7 shows a module (substrate layer) configuration in the second embodiment. The substrate includes a surface conductor layer 300, a first inner conductor layer 301, a second inner conductor layer 302, a back conductor layer 303, and dielectric plates 100a, 100b, and 100c. The constituent elements of the conductor layer and the dielectric plate are the same as in the first embodiment.

  8 is a schematic diagram of the surface conductor layer 300, FIG. 9 is a schematic diagram of the first inner conductor layer 301, FIG. 10 is a schematic diagram of the second inner conductor layer 302, and FIG. A perspective view is shown. In Example 2, the schematic diagram of the back conductor layer 303 is the same as FIG. 4 used in Example 1 above. In FIG. 8, an input matching circuit 1, an input stage transistor 10 for power amplification, an interstage matching circuit 2, an output stage transistor 11 for power amplification, an output matching circuit 3, a base bias control circuit 20, The structures of the transistors 12 and 13 and the resistors 30 and 31 constituting the base bias control circuit 20 are the same as those in the first embodiment.

  FIG. 9 is a schematic diagram of the inner conductor layer 301 of FIG. Here, reference numeral 130 denotes a third shield grounding member. In FIG. 10, 50 is the first wiring, and 140 is a fourth shield grounding member.

  As shown in FIGS. 8 to 11, the base of the input stage transistor 10 is connected to the signal input terminal 43 through the input matching circuit 1 and the through hole 101i, and the collector of the output stage transistor 11 is connected to the output matching circuit. It is connected to the signal output terminal 44 through the circuit 3 and the through hole 101j. At the same time, the output matching circuit 3, the through hole 101 k connecting the surface conductor layer 300 and the second inner conductor layer 302, the first wiring 50 formed in the second inner conductor layer 302, and the second The second inner conductor layer 302 and the back conductor layer 303 are connected to the first terminal 40 through a through hole 101m. The bases of the transistors 12 and 13 constituting the base bias control circuit are connected to the third terminal through the through hole 101, and the collectors of the transistors 12 and 13 are the second wiring 60 and the surface conductor layer 300. And the back conductor layer 303 are connected to the second terminal 41 through a through hole 101h.

  The third to fourth shield grounding members 130 and 140 are connected to the second shield grounding member 120 formed on the back conductor layer 303 through one or more through-holes 101l, and the second shield grounding member 120 and 140 are connected to the second shield grounding member 120. The shield ground member 120 is grounded to a mother board or the like. Further, the third shield grounding member 130 is characterized by having a width of W1 + 2 × W2 or more, where the width of the first wiring 50 is W1 and the dielectric film thickness is W2.

  This is a result derived from the above-described three-dimensional electromagnetic field simulation. The spread of the electromagnetic field from the first wiring to the third shield grounding member is 45 degrees when viewed from the end of the first wiring. The result is based on the fact that the inside is strong and the intensity of the electromagnetic field becomes weak at an angle larger than that.

  The high-frequency power amplifier according to the present invention shown in the second embodiment includes the third shield grounding member 130 mainly between the conductor layers having the first wiring 50 and the second wiring 60, respectively. One inner conductor layer 301 is provided. In Example 2, the first wiring 50 is formed on the second inner conductor layer 302 and the first wiring 60 is formed on the surface conductor layer 300. I do not care.

  The first wiring 50 and the second wiring 60 may be formed across a plurality of conductor layers. An example of this will be described with reference to FIGS. In FIG. 13, 40 is a first terminal formed on the back conductor layer 303 (see FIG. 7), and 50-a is a part of the first wiring 50 formed on the second inner layer conductor layer 302. 50-b is a part of the first wiring 50 formed in the surface layer conductor layer 300, and 101m is a through-hole connecting the first terminal 40 and the first wiring 50-a. 101n is a through hole for connecting the first wiring 50-a and the first wiring 50-b, 41 is a second terminal formed in the back conductor layer 303, and 60 is a front surface. A second wiring formed in the conductor layer, 101 h is a through hole connecting the second terminal 41 and the second wiring 60. A first shield ground member 110 is formed between the first wiring 50-b and the second wiring 60, and the first shielding ground member 110 is formed between the first wiring 50-a and the second wiring 60. A third shield ground member 130 formed in the inner conductor layer 301 is disposed, and a fourth shield ground member 140 is provided between the first wiring 50-a and the through hole 101h in the second inner conductor layer. It is formed. As described above, the methods of the first embodiment and the second embodiment may be appropriately interwoven and used.

  Furthermore, in the second embodiment, the input matching circuit 1, the interstage matching circuit 2, and the output matching circuit 3 are all formed on the surface conductor layer 300. The second inner conductor layer 302 may be formed in a dispersed manner.

  The operation of the present invention shown in the second embodiment is the same as that of the first embodiment. In Examples 1 and 2, the back electrode method for producing the terminal on the back conductor layer is adopted, but the side electrode method for producing the terminal on the side surface of the substrate may be adopted. In the first and second embodiments, a two-stage amplifier is used. However, a one-stage amplifier or an amplifier having three or more stages may be used.

  In the first and second embodiments, the second terminal 41 is a terminal for supplying a collector driving voltage to the transistors 12 and 13 constituting the base bias control circuit, and a collector driving voltage for the power amplifying transistor 10. The second terminal 41 is a fourth terminal for supplying a collector driving voltage to the transistors 12 and 13 constituting the base bias control circuit and a collector driving for the power amplifying transistor 10. You may divide and form in the 5th terminal which supplies a working voltage.

  In the first and second embodiments, the transistors constituting the power amplifier circuit are GaAsHBTs. However, the present invention is not limited to this, and it goes without saying that many modifications are possible. For example, HBT using SiGe (silicon germanium), HBT using InP (indium phosphorus), and the like are applicable.

  Further, in the first and second embodiments, the case where the transistor constituting the power amplifier circuit is a bipolar transistor has been described. However, the present invention is not limited to this. For example, the transistor is a MOSFET (field effect transistor). Can also be applied. In this case, although the circuit operation described above is different between the current drive type and the voltage drive type, a high frequency power amplifier having a stable operation which is a problem to be solved by the present invention can be obtained.

  Furthermore, in the first and second embodiments, the base-bias control circuit 20 employs an emitter follower for the sake of convenience. However, the present invention is not limited to this, and an arbitrary follower such as a source follower or a voltage follower using an operational amplifier. It may be in the form of

  Furthermore, in the first and second embodiments, the first wiring 50 that couples the collector of the transistor 11 and the first terminal 40 that supplies the collector drive voltage to the transistor 11 via the output matching circuit 3, and the transistor A shield grounding member is disposed between the collectors of 12 and 13 and the second wiring 60 that couples the second terminal 41 for supplying a collector driving voltage to the transistors 12 and 13.

  In FIG. 11, the shield grounding members 130 and 140 are connected to the second shield grounding member 120 through one or more through holes, and the second shield grounding member is grounded to a motherboard or the like. The shield ground members 120, 130, and 140 have zero potential. The high-frequency power amplifier of the present invention is operated at a frequency of 900 MHz with a power supply voltage of 3.5 V, for example, and the output power of the output stage transistor 11 is set at 35 dBm, for example.

  At this time, the voltage amplitude at the collector of the output stage transistor 11 is about 15 V, and the current and voltage of the first wiring 50 fluctuate due to the influence of the high frequency output power. Usually, a capacitive element of several μF is inserted between the power supply line and the ground in the power supply line formed on the motherboard or the like that connects the collector driving power supply and the first to first terminals provided on the module. The high frequency fluctuation is not propagated to the collector driving power source or other power source line.

  However, as described in the description of the operation of the first and second embodiments of the present invention, the object of the present invention is to provide the transistor 11 from the first wiring 50 that supplies the collector driving voltage to the power amplification transistor 11. Is to reduce the propagation of electromagnetic fluctuations to the input side, thereby stabilizing the output power of the power amplifier.

  Accordingly, not only between the first wiring 50 and the second wiring 60 but also between the first wiring 50 and the third wiring (not shown) that couples the base of the transistor 10 and the emitter of the transistor 12. The first wiring 50, the fourth wiring (not shown) that couples the base of the transistor 11 and the emitter of the transistor 13, the first wiring 50, the collector of the transistor 10, the second terminal 41, It is desirable that a shield grounding member is also disposed between each of the fifth wirings (not shown) for connecting the two.

  Further, in FIG. 14, a capacitive component is inserted between the first wiring 50 and the fourth wiring, and there is an electromagnetic interaction between the first wiring and the fourth wiring. The measured value of the ± 5 MHz adjacent channel leakage power ratio in the state where the shield grounding member is inserted between the first wiring and the fourth wiring and there is no electromagnetic interaction between the first wiring and the fourth wiring is shown. The adjacent channel leakage power ratio is generally used as a parameter representing distortion of output power with respect to input power of a power amplifier. The measurement conditions are room temperature, W-CDMA modulation signal input, input signal frequency of 1.95 GHz, and output power of 27 dBm.

  FIG. 14 shows that the distortion is reduced by about 15 dB by inserting a shield grounding member between the first wiring and the fourth wiring. Therefore, when the high frequency power amplifiers according to the first and second embodiments are applied to a linear amplifier, the adjacent channel leakage power ratio can be reduced.

  In the above-described embodiments, W-CDMA modulation is taken as an example. However, CDMA modulation in general, EDGE (Enhanced Data-rate for GSM Evolution), PDC (Personal Digital Cellular), OFDM (Orthogonal Frequency Civulation Amplifier, etc.) It goes without saying that the same effect can be obtained even when applied to a high-frequency power amplifier used in a modulation method that requires the above.

DESCRIPTION OF SYMBOLS 1 ... Input matching circuit, 2 ... Interstage matching circuit, 3 ... Output matching circuit, 10, 11, 12, 13 ... Transistor, 20 ... Base bias control circuit, 30, 31 ... Resistor, 40 ... 1st terminal, 41 ... 2nd terminal, 42 ... 3rd terminal, 43 ... Signal input terminal, 44 ... Signal output terminal, 50 ... 1st wiring, 60 ... 2nd wiring, 70 ... Shield grounding member, 100a, 100b, 100c ... Dielectric plates, 101a, 101b, 101c, 101d, 101e, 101f, 101g, 101h, 101i, 101j, 101k, 101l, 101m, 101n ... through holes (through holes), 110 ... first shield ground member, 120 2nd shield ground member 130 ... 3rd shield ground member 140 ... 4th shield ground member 200 ... Surface conductor layer in Example 1 201 ... Backside conductor layer in Example 1, 300 ... Surface conductor layer in Example 2, 301 ... First inner layer conductor layer, 302 ... Second inner layer conductor layer, 303 ... Backside conductor layer in Example 2 401 DESCRIPTION OF SYMBOLS ... Input matching circuit 402 ... Output matching circuit 403 ... Base bias control circuit 410, 411 ... Transistor, 420, 421 ... Resistance, 430 ... Collector drive power supply, 431 ... Gain control power supply

Claims (20)

A first transistor for amplifying and outputting a high frequency signal input via an input or interstage matching circuit;
A second transistor whose output terminal is galvanically connected to the input terminal of the first transistor, supplies a bias signal to the input terminal of the first transistor, and drives the first transistor;
A first terminal for supplying a driving voltage to an output terminal of the first transistor;
A first wiring connecting the first terminal and the output terminal of the first transistor;
A second terminal for supplying a driving voltage to a power supply terminal of the second transistor;
A second wiring connecting the second terminal and a power supply terminal of the second transistor;
A shield grounding member provided between the first wiring and the second wiring and configured to reduce mutual interference generated between the first wiring and the second wiring. A high-frequency power amplifier module. In claim 1,
The first wiring and the second wiring are configured to include a conductor layer placed on the main surface of the dielectric plate, and are arranged so that at least some of them face each other,
The shield grounding member includes a first shield grounding member made of a conductive layer provided in a region where the first wiring and the second wiring face each other without being in contact with each wiring, and the dielectric plate. And a second shield grounding member made of a conductor layer provided on the surface opposite to the surface on which the first shield grounding member is provided,
The high frequency power amplifier module according to claim 1, wherein the dielectric plate is provided with one or more through holes for electrically connecting the first shield grounding member and the second shield grounding member. In claim 2,
The high frequency power amplifier module according to claim 1, wherein the first shield grounding member has a width of 0.2 mm or more. In claim 1,
A first dielectric layer having the first wiring formed on the first surface;
A second dielectric layer in which the second wiring is formed on the first surface;
A third dielectric layer disposed between the first dielectric layer and the second dielectric layer;
The shield grounding member includes a first shield grounding member formed on the first surface of the third dielectric layer and a second surface provided on the second surface of the first dielectric layer. A shield grounding member, and
The first to third dielectric layers are fitted so that the first surface of the first dielectric layer and the surface of the third dielectric layer opposite to the first surface are in contact with each other. And is fitted so that the first surface of the third dielectric layer and the surface of the second dielectric layer opposite to the first surface are in contact with each other,
The first dielectric layer and the third dielectric layer are provided with one or more through holes that electrically connect the first shield grounding member and the second shield grounding member. High frequency power amplifier module characterized by In any one of Claims 1 thru | or 4,
The high frequency power amplifier module, wherein the first transistor is a heterojunction bipolar transistor formed of a compound semiconductor containing gallium arsenide. A first transistor that amplifies a high-frequency signal input via an input or interstage matching circuit and outputs a first amplified signal;
A second transistor that amplifies the first amplified signal input via the output terminal of the first transistor and outputs a second amplified signal;
A third transistor having an output terminal galvanically connected to the input terminal of the first transistor and supplying a bias signal to the input terminal of the first transistor to drive the first transistor;
A first terminal for supplying a driving voltage to an output terminal of the second transistor;
A first wiring connecting the first terminal and the output terminal of the second transistor;
A second terminal for supplying a driving voltage to a power supply terminal of the third transistor;
A second wiring connecting the second terminal and the power supply terminal of the third transistor;
A first shield grounding member that is provided between the first wiring and the second wiring and that reduces mutual interference between the first wiring and the second wiring; A high-frequency power amplifier module characterized by comprising: In claim 6,
A dielectric plate;
And further comprising a second shield grounding member formed on the first surface of the dielectric plate,
The dielectric plate is formed with a through hole for electrically connecting the first shield grounding member and the second shield grounding member,
The first wiring and the second wiring are configured to include a conductor layer formed on a second surface opposite to the first surface of the dielectric plate, and at least a part thereof. Are arranged to face each other,
The first shield grounding member includes a conductive layer provided in a region where the first wiring and the second wiring face each other without being in contact with each wiring. High frequency power amplifier module. In claim 7,
The high frequency power amplifier module according to claim 1, wherein the first shield grounding member has a width of 0.2 mm or more. In claim 6,
A first dielectric layer having the first wiring formed on the first surface;
A second dielectric layer in which the second wiring is formed on the first surface;
A third dielectric layer disposed between the first dielectric layer and the second dielectric layer;
A second shield grounding member provided on the second surface of the first dielectric layer,
The first shield ground member is formed on a first surface of the third dielectric layer;
The first to third dielectric layers are fitted so that the first surface of the first dielectric layer and the surface of the third dielectric layer opposite to the first surface are in contact with each other. And is fitted so that the first surface of the third dielectric layer and the surface of the second dielectric layer opposite to the first surface are in contact with each other,
The first dielectric layer and the third dielectric layer are formed with through holes that electrically connect the first shield grounding member and the second shield grounding member. High frequency power amplifier module. In claim 6,
A first dielectric layer having the second wiring formed on a first surface thereof;
A second dielectric layer in which the first wiring is formed on the first surface;
A third dielectric layer disposed between the first dielectric layer and the second dielectric layer;
A second shield grounding member provided on the second surface of the first dielectric layer,
The first shield ground member is formed on a first surface of the third dielectric layer;
The first to third dielectric layers are fitted so that the first surface of the first dielectric layer and the surface of the third dielectric layer opposite to the first surface are in contact with each other. And is fitted so that the first surface of the third dielectric layer and the surface of the second dielectric layer opposite to the first surface are in contact with each other,
The first dielectric layer and the third dielectric layer are formed with through holes that electrically connect the first shield grounding member and the second shield grounding member. High frequency power amplifier module. In any one of Claims 6 thru | or 10,
At least one of the first to third transistors is a heterojunction bipolar transistor formed by containing any one of gallium arsenide, silicon germanium, and indium phosphorus. module. A first transistor that amplifies a high-frequency signal input via an input or interstage matching circuit and outputs a first amplified signal;
A second transistor that amplifies the first amplified signal input via the output terminal of the first transistor and outputs a second amplified signal;
A third transistor having an output terminal galvanically connected to the input terminal of the first transistor and supplying a bias signal to the input terminal of the first transistor to drive the first transistor;
A first terminal for supplying a driving voltage to an output terminal of the second transistor;
A first wiring connected to the first terminal;
A second wiring connecting the first wiring and the power supply terminal of the second transistor;
A second terminal for supplying a driving voltage to a power supply terminal of the third transistor;
A third wiring connecting the second terminal and the power supply terminal of the third transistor;
A first shield grounding member that is provided between the first wiring and the third wiring and reduces mutual interference generated between the first wiring and the third wiring;
A second shield grounding member that is provided between the second wiring and the third wiring and that reduces mutual interference between the second wiring and the third wiring; A high-frequency power amplifier module characterized by comprising: In claim 12,
A dielectric plate;
And further comprising a third shield grounding member formed on the first surface of the dielectric plate,
The dielectric plate is formed with a first through hole that electrically connects the first shield grounding member and the third shield grounding member;
The dielectric plate is formed with a second through hole that electrically connects the second shield grounding member and the third shield grounding member,
The second wiring and the third wiring are configured to include a conductor layer formed on a second surface opposite to the first surface of the dielectric plate, and at least a part thereof. Are arranged to face each other,
The second shield grounding member includes a conductive layer provided in a region where the second wiring and the third wiring face each other without being in contact with each wiring. High frequency power amplifier module. In claim 13,
The high frequency power amplifier module, wherein the second shield ground member has a width of 0.2 mm or more. In claim 12,
A first dielectric layer having the first wiring formed on the first surface;
A second dielectric layer in which the second wiring, the third wiring, and the second shield grounding member are formed on the first surface;
A third dielectric layer disposed between the first dielectric layer and the second dielectric layer;
A third shield grounding member formed on the second surface of the first dielectric layer,
The first shield ground member is formed on a first surface of the third dielectric layer;
The second shield grounding member includes a conductive layer provided in a region where the second wiring and the third wiring face each other without being in contact with each wiring.
In the first dielectric layer and the third dielectric layer, a first through hole that electrically connects the first shield grounding member and the third shield grounding member is formed,
The second dielectric layer is formed with a second through hole for electrically connecting the first shield grounding member and the second shield grounding member. . In claim 12,
A first dielectric layer in which the first wiring, the third wiring, and the second shield grounding member are formed on the first surface;
A second dielectric layer in which the second wiring is formed on the first surface;
A third dielectric layer disposed between the first dielectric layer and the second dielectric layer;
A third shield grounding member formed on the second surface of the first dielectric layer,
The first shield ground member is formed on a first surface of the third dielectric layer;
The second shield grounding member includes a conductive layer provided in a region where the first wiring and the third wiring face each other without being in contact with each wiring,
The first dielectric layer is formed with a first through hole that electrically connects the second shield grounding member and the third shield grounding member,
The third dielectric layer is provided with a second through hole for electrically connecting the first shield grounding member and the second shield grounding member. . In any one of Claims 12 thru | or 16,
At least one of the first to third transistors is a heterojunction bipolar transistor formed by containing any one of gallium arsenide, silicon germanium, and indium phosphorus. module. The claim 15, further comprising:
In the first dielectric layer, a third through hole that electrically connects the first terminal and the first wiring is formed,
In the second dielectric layer and the third dielectric layer, a fourth through hole for electrically connecting the first wiring and the second wiring is formed,
The first dielectric layer, the second dielectric layer, and the third dielectric layer have a fifth through hole that electrically connects the second terminal and the third wiring. A high frequency power amplifier module characterized in that is formed. In claim 18,
A high frequency power amplifier module, further comprising a fourth shield ground member formed between the first wiring and the fifth through hole. The claim 16, further comprising:
In the first dielectric layer, a third through hole that electrically connects the first terminal and the first wiring is formed,
In the second dielectric layer and the third dielectric layer, a fourth through hole for electrically connecting the first wiring and the second wiring is formed,
A high frequency power amplifier module, wherein a fifth through hole for electrically connecting the second terminal and the third wiring is formed in the first dielectric layer.

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