JP2009198764A - Light emitting device and electronic equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device capable of reducing luminance unevenness of an organic EL element. <P>SOLUTION: The light emitting device includes: the organic EL element 8 including a pixel electrode 13 and a counter electrode, which are constructed on a substrate, and a light emitting function layer, which is held between them; a relay line 61 electrically connecting between the pixel electrode 13 and a driving transistor 9 driving the organic EL element; and a Hall element 500 detecting magnetic field generated by a current flowing to the relay line. When the current is caused to flow between upper and lower terminals (referring to signs 502a and 503a) of the Hall element 500 in figure and the magnetic field is applied in a direction piercing through a paper surface, Hall electric field is generated. A control circuit C controls magnitude of the current flowing to the organic EL element in accordance with a result of detection. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a light emitting device and an electronic device that emit light by electroluminescence.

As a thin and light-emitting source, an organic light emitting diode (OLED), that is, an organic EL (electro luminescent) element is provided. The organic EL element has a structure in which a light emitting layer formed of an organic material is sandwiched between a pixel electrode and a counter electrode.
The principle of light emission in such an organic EL element is as follows. That is, (i) holes (holes) are injected into the light emitting layer from the pixel electrode serving as the anode and electrons are injected from the counter electrode serving as the cathode. (Ii) excitons are generated by recombination of these holes and electrons. (Iii) When this exciton transitions to the ground state, energy emission, that is, a light emission phenomenon occurs.
In these processes, the amount of holes and electrons involved in light emission can be regarded as the amount of current flowing through the organic EL element, but the light emission luminance of the organic EL element is approximately proportional to the magnitude of the current amount. It is known to do.

As such an organic EL element, for example, one disclosed in Patent Document 1 is known.
Japanese Patent Laid-Open No. 2002-260851

By the way, in the above-mentioned organic EL element, generally, the other characteristics such as the above-described current-luminance characteristic are observed. That is, even if many organic EL devices are manufactured under the same conditions and light is emitted under the same conditions, some of them emit light more strongly, and others emit light weakly. Occurs. This is because, for example, subtle variations in various parameters in the process for manufacturing these organic EL elements (particularly, the light-emitting layer that is a component of each), and characteristics of drive transistors for driving the organic EL elements This is due to the influence of differences.
In addition, even when the brightness of all elements is within a certain range at the beginning of manufacturing, the deterioration of the organic EL elements progresses over time, and the degree of deterioration differs for each organic EL element. May occur. In this case, a change in luminance or its variation occurs over time.
For this reason, if there are a plurality of organic EL elements, it is almost always possible to observe variations in luminance among them. The practical response is how these variations can be confined within an acceptable range.

  Conventionally, various proposals have been made to improve such variations in light emission luminance. For example, Patent Document 1 includes “an optical sensor for detecting light intensity emitted from a light emitting element” ((Claim 1) of Patent Document 1 or (1) in [0018]), and As described above, by optimizing the light emission amount (current value flowing through the light emitting element) and / or the light emitting time of each element based on the detected light information ([0023] of Patent Document 1) Try to solve a difficult problem. This patent document 1 can be said to be a technique that focuses on the light itself emitted from the light emitting element.

However, this patent document 1 has the following problems. That is, the “photosensor” referred to in Patent Document 1 is formed “on the light-emitting element” ([Claim 1] of Patent Document 1, etc.), more specifically, “upper electrode 11” ( (See [FIG. 1] and [FIG. 2] or [0026] of Patent Document 1).
However, in this case, a part of the light emitting region of the light emitting element is inevitably sacrificed in the sense that it does not contribute to image display. Certainly, it can be said that “the light sensor is formed on the light emitting element, so that the light emitted from the light emitting element can be efficiently guided to the light sensor” (Patent Document 1, [0023]). However, it can be said that it is a disadvantage that cannot be ignored in an organic EL element whose luminous efficiency is not so high.

  The present invention has been made in view of the above-described problems, and provides a light-emitting device and an electronic apparatus that can solve all or part of the above-described problems, centering on reduction in luminance unevenness of an organic EL element. The task is to do.

  In order to solve the above-described problem, a light-emitting device of the present invention includes a substrate, a first and second electrode layer constructed on the substrate, and a light-emitting element layer sandwiched between the light-emitting elements, A wiring electrically connected to one of the first and second electrode layers, a magnetic field detection means for detecting a magnetic field generated by a current flowing through the wiring, and the detection result of the magnetic field detection means Control means for controlling the magnitude of the current flowing through the light emitting element.

According to the present invention, for example, current along the order of wiring, first electrode layer, light emitting functional layer, and second electrode layer (or vice versa) can flow. Here, the light emitting element is, for example, an organic EL element, and the light emitting functional layer emits light when the current flows through the light emitting functional layer.
Here, particularly in the present invention, the magnetic field detection means detects the magnetic field generated by the current flowing in the wiring. This magnetic field includes a magnetic field in accordance with the so-called right-handed screw law, and therefore, the strength of the magnetic field increases in proportion to the magnitude of the current. And a control means controls the magnitude | size of the electric current which flows into the said light emitting element according to this detection result. That is, in the present invention, it can be considered that the magnetic field detection means grasps the current state of the light emitting element, and the control means performs feedback control based on the current state.
In this case, the present invention does not focus on the light itself emitted from the light emitting element or the light emitting functional layer. That is, according to the present invention, since the magnetic field around the wiring is to be detected, for example, all of the light emitted from the light emitting element can be obtained without using a light detection means such as a photodiode or in other words. The current state of the light emitting element can be accurately grasped while contributing to the original use (for example, image display). Incidentally, in this case, as described above, a part of the light emitting region is not “sacrificed”.
Then, by performing the feedback control, it is easy to adjust the light emitting element to emit light with a desired luminance, and thereby an effect such as reduction in luminance unevenness can be enjoyed.

In the light emitting device according to the present invention, the magnetic field detecting means may include a Hall element.
According to this aspect, since the magnetic field detection means includes the Hall element, one of the most preferable specific examples of the present invention is provided. This is due to the fact that the Hall element can be easily downsized or the formation process thereof can coexist with the formation process of the light emitting element without difficulty.

In this aspect, the semiconductor device further includes a driving transistor for driving the light emitting element, and a first semiconductor layer included in the driving transistor and electrically connected to the first electrode layer, and the Hall element includes: A second semiconductor layer formed simultaneously with the first semiconductor layer may be included on the base film on which the first semiconductor layer is formed.
In this aspect, since the first semiconductor layer that is a component of the driving transistor of the light emitting element and the second semiconductor layer that is a component of the Hall element are formed at the same time, the manufacturing process is simplified. Is possible.

In the light emitting device of the present invention, the magnetic field detection means may include a magnetoresistive element.
According to this aspect, since the magnetic field detection means includes the magnetoresistive effect element, one of the most preferable specific examples of the present invention is provided. Here, the magnetoresistive element means an element that changes its electric resistance by applying a magnetic field. This is classified into, for example, GMR (Giant Magneto Resistance) type, TMR (Tunneling Magneto Resistance) type, AMR (Anisotropic Magneto Resistance) type, CMR (Colossal Magneto Resistance) type, etc. Any of the “resistance effect elements” falls within the range.

Moreover, in the light-emitting device of this invention, you may comprise the said magnetic field detection means so that a magnetic impedance element may be included.
According to this aspect, since the magnetic field detection means includes the magneto-impedance element, one of the most preferable specific examples of the present invention is provided. Here, the magneto-impedance element is an element using a so-called MI effect (Magneto Impedance Effect), and the MI effect is an effect that the impedance at both ends thereof changes when a magnetic field is applied to an amorphous magnetic material through which a high-frequency current flows. .

In the light-emitting device of the present invention, the magnetic field detection unit includes a magnetic field detection element, and the magnetic field detection element is formed so as to overlap a part of the formation region of the light-emitting functional layer when the substrate is viewed in plan. In addition, the electrode layer on the side where the magnetic field detection element does not exist as viewed from the light emitting functional layer among the first and second electrode layers may be configured to be translucent.
According to this aspect, the above-described aspect of effective use of all the light emitted from the light emitting element is better realized. This is because in this embodiment, the magnetic field detection element and the translucent electrode layer are disposed on both sides of the light emitting functional layer, respectively. According to this, the light emitted from the light emitting functional layer is emitted without waste from the translucent electrode layer, and the magnetic field detecting element does not interfere with the progress of such light. This also means that this aspect (regulation) provides one of the most suitable arrangement examples of the magnetic field detection elements in the light emitting device.
Note that, as a precaution, this aspect does not exclude an aspect in which both the first and second electrode layers have translucency, as is apparent from the above definition.

In the light emitting device of the present invention, the magnetic field detection means includes a plurality of magnetic field detection elements, and the plurality of magnetic field detection elements are arranged along a direction intersecting with the extending direction of the wiring. Also good.
According to this aspect, the magnetic field generated by the current flowing through the wiring can be detected more accurately. This is because the strength of the magnetic field generally decreases in inverse proportion to the distance between the wiring and the magnetic field detection element. However, as described above, the magnetic field detection element is “along the direction in which the wiring extends. This is because the strength of the magnetic field can be observed in detail, including the state of the change.

In this aspect, in particular, the “magnetic field detection means” includes the above-described “magnetoresistance effect element” (in other words, the “magnetic field detection element” referred to in this aspect includes the “magnetoresistance effect element”). It is suitable to be applied to. This is because a magnetoresistive element usually exhibits excellent performance in a digital detection application such as whether or not a magnetic field is applied, but it is not suitable for an analog application. . Then, the feedback control described above may be based on rough control such as “1” or “0”.
However, in this embodiment, since the magnetic field detection elements are “arranged” as described above, for example, “1” is detected in the range where the influence of the magnetic field extends around the wiring, and “0” is detected in the range where the magnetic field does not reach. This is because it is possible to estimate the strength of the magnetic field by performing an operation such as confirming the number of “1” among them.

In the light emitting device of the present invention, the magnetic field detection unit includes a magnetic field detection element, and the magnetic field detection element is formed by sandwiching at least one interlayer insulating film between the wiring and the wiring. May be.
According to this aspect, one of the most suitable arrangement examples of the magnetic field detection elements in the light emitting device is provided. This is because, if the magnetic field detection element is arranged so as to sandwich the interlayer insulating film as viewed from the wiring to be detected, the distance between the magnetic field detection element and the wiring is smaller, and this is compared. This is because it can be realized easily. According to the former, it becomes possible to detect the magnetic field with higher sensitivity, and according to the latter, the degree of freedom in designing the light emitting device, the ease of manufacturing, and the like are increased.
It is clear that such an effect is contrasted with the case where the magnetic field detection element and the wiring are simultaneously formed on a common base film. Even in this case, it seems to be possible to reduce the physical distance between the magnetic field detection element and the wiring without difficulty, but it is necessary to connect various wirings necessary for the magnetic field detection element. This is not easy considering that various types of wiring must be connected. For example, when the magnetic field detection element includes the Hall element, since at least four connection terminals and wirings connected to the Hall magnetic field generation layer are usually required, horizontal arrangement as described above is extremely difficult. This aspect does not suffer from such a problem.

In the light emitting device of the present invention, the wiring includes a first wiring electrically connected to the first electrode layer and a second wiring electrically connected to the second electrode layer, The magnetic field detecting means may include a first magnetic field detecting element corresponding to the first wiring and a second magnetic field detecting element corresponding to the second wiring.
According to this aspect, since the magnetic field detection is performed for both the first wiring connected to the first electrode layer and the second wiring connected to the second electrode layer, it is possible to more accurately grasp the current state of the light emitting element. Therefore, the above-described feedback control can be performed better.

On the other hand, in order to solve the above problems, an electronic apparatus according to the present invention includes the above-described various types of light emitting devices.
Since the electronic apparatus of the present invention includes the various light emitting devices described above, it is possible to display an image with reduced luminance unevenness.

<First Embodiment>
Hereinafter, a first embodiment according to the present invention will be described with reference to FIGS. In these drawings and the subsequent drawings to be referred to later, the ratio of the dimensions of each part or the distance between the elements may be appropriately different from the actual one (to make the drawings easier to see). Because of the size of the page or because of the size of the page, there may be changes.)

FIG. 1 is a plan view showing an example of the organic EL device (light emitting device) of the first embodiment.
In FIG. 1, the organic EL device includes an element substrate 7 and various elements formed on the element substrate 7. Here, the various elements include the organic EL element 8, the scanning line 3 and the data line 6, the scanning line driving circuits 103A and 103B, the data line driving circuit 106, the precharge circuit 106A, the counter electrode power supply line 201, and the hole. The element 500 or the like.

As shown in FIG. 1, a plurality of organic EL elements (light emitting elements) 8 are provided on an element substrate 7, and the plurality of organic EL elements 8 are arranged in a matrix. Each of the organic EL elements 8 includes a pixel electrode, a light emitting functional layer, and a counter electrode. Each of these elements will be described later with reference to FIG.
The image display area 7 a is an area where the plurality of organic EL elements 8 are arranged on the element substrate 7. In the image display area 7 a, a desired image can be displayed based on individual light emission and non-light emission of each organic EL element 8. Hereinafter, the area excluding the image display area 7a on the surface of the element substrate 7 is referred to as a “peripheral area”.

  The scanning lines 3 and the data lines 6 are arranged so as to correspond to the respective rows and columns of the organic EL elements 8 arranged in a matrix. More specifically, as shown in FIG. 1, the scanning line 3 extends in the left-right direction in the drawing and is connected to scanning line driving circuits 103A and 103B formed on the peripheral region. On the other hand, the data line 6 extends along the vertical direction in the drawing and is connected to the data line driving circuit 106 formed on the peripheral region. A unit circuit (pixel circuit) P including the organic EL element 8 and the like described above is provided in the vicinity of each intersection of the scanning lines 3 and the data lines 6.

As shown in FIG. 2, the unit circuit P includes the organic EL element 8 described above, and also includes an n-channel first transistor 68, a p-channel second transistor 9, and a capacitor 69 (note that In FIG. 2, the illustration of the Hall element 500 shown in FIG. 1 is omitted.
The unit circuit P receives power from the current supply line 113. The plurality of current supply lines 113 are connected to a light-emitting power source (not shown). The source electrode of the p-channel type second transistor (drive transistor) 9 is connected to the current supply line 113, while the drain electrode thereof is connected to the pixel electrode of the organic EL element 8. A capacitive element 69 is provided between the source electrode and the gate electrode of the second transistor 9. On the other hand, the gate electrode of the n-channel first transistor 68 is connected to the scanning line 3, its source electrode is connected to the data line 6, and its drain electrode is connected to the gate electrode of the second transistor 9.
In the unit circuit P, when the scanning line driving circuits 103A and 103B select the scanning line 3 corresponding to the unit circuit P, the first transistor 68 is turned on, and the data signal supplied via the data line 6 is transferred to the internal circuit P. It is held in the capacitor element 69. Then, the second transistor 9 supplies a current corresponding to the level of the data signal to the organic EL element 8. As a result, the organic EL element 8 emits light with a luminance corresponding to the level of the data signal.

On the peripheral region on the element substrate 7, a precharge circuit 106A is provided. The precharge circuit 106A is a circuit for setting the data line 6 to a predetermined potential prior to a data signal write operation to the organic EL element 8.
The counter electrode power supply line 201 (hereinafter simply referred to as “power supply line 201”) has a square shape in plan view so as to substantially follow the outline of the element substrate 7. The power supply line 201 supplies a power supply voltage such as a ground level to the counter electrode of the organic EL element 8.
In the above description, an example in which all of the scanning line driving circuits 103A and 103B, the data line driving circuit 106, and the precharge circuit 106A are formed on the element substrate 7 has been described. Or a part may be formed in a flexible substrate. In this case, by providing appropriate terminals at both contact portions between the flexible substrate and the element substrate 7, electrical connection between the two can be achieved.

  Overview The organic EL device having the configuration as described above has a structure as shown in FIG. 3 in plan view with respect to the unit circuit P, and moreover, on the element substrate 7 as shown in FIG. A laminated structure 250 as shown is provided. As shown in FIG. 4, the stacked structure 250 includes a second transistor 9 (including the gate insulating film 300), a Hall element 500, and first to first elements in order from the bottom of the figure with respect to the element substrate 7. It includes the three interlayer insulating films 301 to 303, the reflective layer 34, the fourth interlayer insulating film 304, the pixel electrode 13, the light emitting functional layer 18, the counter electrode 5, and the like.

Among these, the gate insulating film 300 and the first to fourth interlayer insulating films 301 to 304 (hereinafter, simply referred to as “insulating films 300 to 304”) are short circuits between other remaining conductive elements. It contributes not to occur or to realize a suitable arrangement of these conductive elements in the laminated structure 250. Although these insulating films 300 to 304 can be made of various insulating materials with various thicknesses, it is preferable that the insulating films 300 to 304 are appropriately selected depending on the arrangement position and role of each insulating film in the laminated structure 250. A suitable thickness and material may be selected.
More specifically, for example, the insulating films 300 to 304 are preferably made of SiO ₂ , SiN, SiON, or the like. Alternatively, when it is desirable that the surface be flatter, all or a part of the insulating films 300 to 304 is made of a resin (for example, acrylic resin) having a fluidity of a certain level or more during manufacturing. It may be made. According to this, even if the unevenness on the lower layer side of the insulating film is relatively severe, the insulating film covers the unevenness so as to level out the unevenness, so that the surface appears as a flattened surface. It is preferable that the above-mentioned characteristics be satisfied in the second and third interlayer insulating films 302 and 303 that function as a base film for the reflective layer 34 or the pixel electrode 13 in FIG.

The second transistor 9 is included in the unit circuit P as described above. As shown in FIG. 4, the second transistor 9 has a stacked structure of the semiconductor layer 1, the gate insulating film 300, and the gate electrode 31. The gate electrode 31 faces the channel region of the semiconductor layer 1. In addition, a part of the power supply line 113 described above is connected as a source electrode to the source region of the semiconductor layer 1, and a part of the relay line 61 is connected as a drain electrode to the drain region. Both of these are connected to the semiconductor layer 1 through contact holes 361 and 362, respectively.
It should be noted that the first transistor 68 described with reference to FIG. 2 includes a semiconductor layer, a gate insulating film, a gate metal, etc., an electrode thin film that constitutes the capacitor 69, and the scanning line 3 and the data line 6. Although constituting a part of the laminated structure 250, the illustration thereof is omitted in FIG.

  On the other hand, each of the aforementioned organic EL elements 8 is composed of the pixel electrode 13, the light emitting functional layer 18, and the counter electrode 5 among the above-described various elements constituting the stacked structure 250 as shown in FIG. 4. The

Among these, the pixel electrodes 13 are formed on the element substrate 7 so as to be arranged in a matrix. The fact that the organic EL elements 8 are arranged in a matrix corresponds to the fact that the pixel electrodes 13 are arranged in a matrix as described above (see FIG. 1).
The pixel electrode 13 is electrically connected to the relay layer 61 as the drain electrode described above via the contact hole 363. Thereby, the pixel electrode 13 can apply the current supplied from the current supply line 113 to the light emitting functional layer 18 via the second transistor 9 shown in FIG. The contact hole 363 is formed so as to penetrate the second and third interlayer insulating films 302 and 303.
The pixel electrode 13 is made of a light-transmitting and conductive material such as ITO (Indium Tin Oxide).

The reflective layer 34 is formed on the third interlayer insulating film 303 and below the fourth interlayer insulating film 304 so as to correspond to the formation region of the pixel electrode 13. As shown in FIG. 4, the reflective layer 34 reflects light emitted from the light emitting functional layer 18. This reflected light travels upward in the figure (see the arrow in FIG. 4). Thus, the organic EL device according to the first embodiment is a so-called top emission type. From this, the element substrate 7 may be made of an opaque material such as ceramics or metal (in contrast, in the case of the bottom emission type, the element substrate 7 is made of a translucent material. There is a need.)
Such a reflective layer 34 is preferably made of a material having a relatively high light reflection performance in order to better exhibit the above-described reflection function. For example, a metal such as aluminum or silver can be used.

The light emitting functional layer 18 is formed on the pixel electrode 13 as shown in FIG. The light emitting functional layer 18 includes at least an organic light emitting layer. The organic light emitting layer is composed of an organic EL material that emits light when excitons generated by recombination of holes and electrons transition to the ground state. When this organic EL substance is, for example, a polymer material, the organic EL substance is supplied only within each space partitioned by a partition wall (not shown), for example, by a droplet coating method (inkjet method) (that is, for each pixel). Is done.
As other layers constituting the light-emitting functional layer 18, part or all of an electron block layer, a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and a hole block layer may be provided.

The counter electrode 5 is in contact with the light emitting functional layer 18 as shown in FIG. The counter electrode 5 is formed in a rectangular shape as if covering the entire surface of the element substrate 7 in a plan view (so-called solid shape having no special opening, gap, etc. therein) (FIG. 4). Some of them are shown in the figure.) The periphery of the counter electrode 5 is electrically connected to the power supply line 201 shown in FIG. 1 (the connection mode is not shown).
Such a counter electrode 5 is made of a translucent and conductive material such as ITO (Indium Tin Oxide). Alternatively, if a sufficiently thin thin film is formed of any material, it has a certain level of translucency. Therefore, the counter electrode 5 is made of a metal material such as MgAg or an alloy material in addition to ITO. May be.

  In addition to the above configuration, the organic EL device according to the first embodiment particularly includes a Hall element (magnetic field detection element) 500 as shown in FIG. 3 or FIG. In connection with the Hall element 500, the organic EL device includes a semiconductor layer 501 (which is a part of the Hall element 500), first and second current supply lines 502 and 503, and first and second voltage detections. Lines 504 and 505 are provided. The various elements including the Hall element 500 described above and the magnetic field detection means 550 described later constitute a specific example of the “magnetic field detection means” in the present invention.

  Among these, as shown in FIG. 3, the semiconductor layer 501 has a substantially rectangular shape in plan view. The semiconductor layer 501 is formed simultaneously with the semiconductor layer 1 that is a component of the second transistor 9 described above. That is, as shown in FIG. 4, the semiconductor layers 501 and 1 are formed simultaneously on the surface of the element substrate 7 as a base thereof.

Note that the “underlying film” in the present invention specifically includes “the surface of the element substrate 7” as is apparent from the above description. However, these semiconductor layers 501 and 1 may be formed on a base insulating film made of SiO ₂ or the like, for example, on the surface of the element substrate 7 for the purpose of protecting them. In this case, the semiconductor layers 501 and 1 are literally formed on the “underlying film”.
Further, as is apparent from FIG. 3, the semiconductor layer 501 is formed simultaneously with the semiconductor layer 1 and also with the semiconductor layer constituting the first transistor 68. In this connection, the semiconductor layer 501 is not particularly concerned with whether it is p-type or n-type. Therefore, the doping process regarding the semiconductor layer 501 and the semiconductor layer 1 and the semiconductor layer of the first transistor 68 can be performed at the same time, but if necessary, between them by using an appropriate mask or the like. Adjustments can be made.

The first current supply line 502 extends so as to cross the formation region of the pixel electrode 13 in the left-right direction in FIG. The first current supply line 502 has a protruding portion 502 a for making contact with a part of the semiconductor layer 501 at a part thereof. The overhang portions 502 a are provided at regular intervals along the extending direction of the first current supply line 502. This fixed interval substantially coincides with the pixel array interval along the row direction shown in FIG. That is, the first current supply line 502 is provided in common for at least each pixel row.
Further, as shown in FIGS. 3 and 4, the first current supply line 502 is formed on the gate insulating film 300. Therefore, the first current supply line 502 is formed simultaneously with the gate electrode 31, the scanning line 3 and the like described above. .

On the other hand, the second current supply line 503 extends so as to cross the formation region of the pixel electrode 13 in the vertical direction in FIG. In addition, the second current supply line 503 also has a protruding portion 503 a for making contact with a part of the semiconductor layer 501, as in the first current supply line 502. The overhanging portion 503a has an L shape in plan view as shown in the drawing. The overhang portions 503a are also provided at regular intervals along the extending direction of the second current supply lines 503 (in this case, substantially coincide with the pixel array intervals along the column direction shown in FIG. 1). It is done. That is, the second current supply line 503 is provided in common for at least each pixel column.
Further, as shown in FIGS. 3 and 4, the second current supply line 503 is formed on the first interlayer insulating film 501. Therefore, the second current supply line 503 is formed simultaneously with the relay line 61, the data line 6 and the like described above. Is done.

  The leading ends of the overhang portions 502a and 503a are opposed to each other with the semiconductor layer 501 interposed therebetween as shown in FIG. Thus, if an appropriate potential is set between the former and the latter, a current can flow along the direction from the former to the latter (or from the latter to the former). In FIG. 3, the direction is a direction along the upper direction or the lower direction in the drawing.

Subsequently, the first voltage detection line 504 is in a substantially parallel relationship with the second current supply line 503 described above with respect to the arrangement mode. That is, the first voltage detection line 504 extends, as compared with the second current supply line 503, in such a manner as to cross the formation region of the pixel electrode 13 in the vertical direction in FIG. This is the same in that it has an overhanging portion 504a to be taken and a point formed on the first interlayer insulating film 301.
This is also true for the relationship between the second voltage detection line 505 and the first current supply line 502. That is, the second voltage detection line 505 extends in a horizontal direction in FIG. 3 across the formation region of the pixel electrode 13 as compared with the first current supply line 502, and a part of the second voltage detection line 505 contacts the semiconductor layer 501. This is the same in that each has a protruding portion 505a for forming the gate insulating film 300 and a point formed on the gate insulating film 300.

However, among the above, the protruding portion 504a of the first voltage detection line 504 and the protruding portion 505a of the second voltage supply line 505 are both the tip portions of the protruding portions 502a and 503a in the semiconductor layer 501, respectively. And a portion extending in a direction perpendicular to the straight line connecting them. And these overhang | projection parts 504a and 505a are arrange | positioned so that each front-end | tip part may oppose.
As described above, the straight line connecting the overhang portions 504a and 505a is orthogonal to the straight line connecting the overhang portions 502a and 503a.

Of the above, the overhanging portion 504a of the first voltage detection line 504 is different from the above-described portion where the overhanging portion 503a extends from the second current supply line 503 (that is, any element (503a 503) is also an element formed on the gate insulating film 300 at the same time as the gate electrode 31 and the like, which is different from maintaining an integral relationship on the first interlayer insulating film 301). And this overhang | projection part 504a is connected to a part of 1st voltage detection line 504 through the contact hole in the end.
Such an arrangement mode is taken to prevent a short circuit with the relay line 61. That is, the relay line 61 is a relay line for electrically connecting the second transistor 9 or the semiconductor layer 1 as a component thereof and the pixel electrode 13 as described above. As shown in FIG. 4, the first interlayer insulating film 301 is disposed so as to extend along the vertical direction in FIG. 3 between the first voltage detection line 504 and the semiconductor layer 501. For this reason, the overhanging portion 504a of the first voltage detection line 504 is formed on the gate insulating film 300 in order to reach the semiconductor layer 501 under the so-called lower side of the relay line 61.

Further, among the above, the first and second voltage detection lines 504 and 505 are connected to the magnetic field detection circuit 550 shown in FIG. The magnetic field detection circuit 550 detects the magnetic field around the relay line 61 by detecting the magnitude of the Hall voltage generated in the Hall element 500. The magnetic field detection circuit 550 according to the first embodiment has an ability to specify which unit circuit P corresponds to the detected Hall voltage or magnetic field.
The magnetic field detection circuit 550 supplies the detection result to an organic EL device control circuit (hereinafter simply referred to as “control circuit”) C. The control circuit C controls the magnitude of the current flowing through the organic EL element 8 by changing the content of the data signal sent out by the data line driving circuit 106 described above according to the detection result.
In addition to the control described above, the control circuit C includes the control for realizing the harmonized operation of the entire organic EL device according to the first embodiment, including the control of the scanning line driving circuits 103A and 103B described above. I do.

  The arrangement relationship regarding the various elements constituting the Hall element 500 described above has a relatively important meaning in the first embodiment. The meaning will become clearer in the description of the operation or effect of the organic EL device according to the first embodiment, which will be described later, but some characteristic elements of the arrangement relationship are extracted in order to make this meaningful. It will be as follows.

[I] The extending direction of the relay line 61 is parallel to the direction in which the straight lines connecting the portions where the first and second current supply lines 502 and 503 are in contact with the semiconductor layer 501 extend. That is, the current flowing through the semiconductor layer 501 and the current flowing through the relay line 61 flow in the same direction or in opposite directions.
[II] The relay line 61 is a wiring that relays between the second transistor 9 and the pixel electrode 13.
[III] The relay line 61 is positioned above the Hall element 500 with the first interlayer insulating film 301 interposed therebetween. Alternatively, the Hall element 500, the first interlayer insulating film 301, and the relay line 61 have a laminated structure in this order.
[IV] The relay line 61 extends across the entire length of the formation region of the pixel electrode 13.

According to the organic EL device having the above-described configuration, the following operational effects are achieved.
First, in the organic EL device according to the first embodiment, a predetermined potential difference is set between the pixel electrode 13 and the counter electrode 5 by a light emission power source (not shown), so that a current flows through the light emitting functional layer 18. That is, holes are injected into the light emitting functional layer 18 from the pixel electrode 13 and electrons are injected from the counter electrode 5, respectively. At this time, these holes and electrons recombine to generate excitons. When this exciton makes a transition to the ground state, a light emission phenomenon occurs. As described with reference to FIG. 4, a part of the light is reflected by the reflective layer 34 and then travels to the outside of the apparatus. The other part proceeds directly to the outside of the apparatus (see FIG. 4).

  At this time, the Hall element 500 acts particularly in the first embodiment. That is, as described above, when a current flows through the organic EL element 8, the current is applied to the second transistor 9 as described with reference to FIG. Flows. Then, if the direction of this current coincides with the direction represented by the arrow pointing downward in the drawing shown in FIG. 5 (see symbol Iel), a magnetic field centered on this is formed around the relay line 61. appear. Since this magnetic field follows the right-handed screw law, as shown in FIG. 5, the direction is from right to left in the drawing on this side of the paper, and from left to right in the drawing on the other side of the drawing. At the same time, in this case, in the region on the right side of the relay line 61, the direction of the magnetic field penetrates the paper surface from the other side of the paper surface to this side. A magnetic field with the same orientation will penetrate (see also FIG. 6).

Further, when the magnetic flux density is B, the magnetic permeability is μ, the current is I, and the distance from the center of the relay line 61 is R,
B = μI / 2πR (1)
Is established. From this equation (1), it can be seen that the strength of the magnetic field applied to the Hall element 500 is affected by the value of the current flowing through the relay line 61 or the distance between the Hall element 500 and the relay line 61.

  Here, a predetermined potential is set between the first and second current supply lines 502 and 503, and a current is allowed to flow from the top to the bottom (or bottom to top) of the semiconductor layer 501 in FIG. For example, a Hall electric field is generated in the semiconductor layer 501. That is, the Hall voltage Vha is generated in the left-right direction in FIG. 5 orthogonal to both the current and magnetic field directions. A current corresponding to the Hall voltage Vha flows through the first and second voltage detection lines 504 and 505. The magnetic field detection circuit 550 detects the magnitude of the Hall voltage Vha through the first and second voltage detection lines 504 and 505. Then, the control circuit C receives the detection result and controls the magnitude of the current flowing through the organic EL element 8 (see FIG. 1).

In this case, there are various specific modes of detection and current control by the magnetic field detection circuit 550 and the control circuit C. For example, it is as follows.
First, the magnetic field detection circuit 550 detects each of these Hall voltages Vha when all the organic EL elements 8 shown in FIG. 1 emit light under the same conditions (herein, the organic EL elements 8 are hereinafter referred to as the organic EL elements 8). Let the number be N, and the unique Hall voltage detected for each of them be represented as Vha (1), Vha (2),..., Vha (N)), and second, all these holes An average value of the voltages, that is, VA = (Vha (1), Vha (2),..., Vha (N)) / N, and thirdly, this average value VA and each Hall voltage Vha (1), From the difference from the values of Vha (2),..., Vha (N), if VA <Vha (p) (where p = 1, 2,..., N), the current of the p-th organic EL element 8 If VA> Vha (p), the current of the p-th organic EL element 8 is increased. Maintaining the status quo of the current A = Vha (p) if the p-th organic EL element 8, it seems that such.

  If necessary, the final third step can be performed at any time during the operation of the organic EL device. In general, for the organic EL element 8, a proportional relationship is established between current and luminance as shown in FIG. Therefore, for example, when the magnetic field of an organic EL element 8 is observed during operation of the apparatus, if it is found that the light is emitted only at the luminance L0 corresponding to the current I0, the current is increased to I * and corresponds to the current I1. If it is known that the light is emitted with the luminance L1, it is possible to operate such as reducing the current to I * (in FIG. 7, I * in FIG. 7 corresponds to the role of the average value VA). ).

With the above-described actions and operations, the following effects are achieved in the first embodiment.
(1) First, even if the characteristics of the organic EL element 8 on the image display region 7a are different, luminance unevenness when the region 7a is viewed from the whole viewpoint is reduced. As is apparent from the above description, in the first embodiment, the feedback control for each of all the organic EL elements 8 is performed by detecting the magnetic field generated by the current flowing through the relay line 61. Because it is.

(2) In particular, in the first embodiment, the above-described effects are more effectively enjoyed by the presence of the characteristic elements from [I] to [IV] described above.
That is, the direction of the Hall electric field is suitably set by the parallel relationship between the relay line 61 and the current flow direction in the semiconductor layer 501 ([I]). It is possible without difficulty in structure and better.
In addition, the fact that the relay line 61 connecting the pixel electrode 13 and the second transistor 9 is selected as a magnetic field detection target ([II]) is for grasping the current state of the organic EL element 8 that is a premise of feedback control. An optimal example is provided. In relation to this, in the first embodiment, the laminated structure via the relay line 61, the hall element 500, and the first interlayer insulating film 301 ([III]) Therefore, as can be seen from the equation (1), it is possible to detect the magnetic field better. This can be understood more clearly from FIG. As can be inferred from this figure, if the distance R between the relay line 61 and the semiconductor layer 501 is considered to be narrower, the distance R corresponds in principle to the thickness of the first interlayer insulating film 301. (In this case, the relay line 61 exists immediately above the semiconductor layer 501).
In addition, the fact that the relay line 61 extends across the entire length of the region where the pixel electrode 13 is formed ([IV]) improves the magnetic field through advantages such as relatively free setting of the magnetic field detection location. Contributes to detection.

(3) In the organic EL device according to the first embodiment, as described above, the top emission type including the reflective layer 34 and the like is employed, and the Hall element 500 is a counter electrode as viewed from the light emitting functional layer 18. Since it is arranged on the side opposite to the side where 5 is present, all the light emitted from the light emitting functional layer 18 can be effectively used. This is because the Hall element 500 is formed in the formation region of the pixel electrode 13 (see FIG. 3), but this does not interfere with the progress of light.

(4) In the organic EL device according to the first embodiment, the semiconductor layer 501 of the Hall element 500 and the semiconductor layer 1 of the second transistor 9 are formed simultaneously on the surface of the element substrate 7. For example, compared with the case where these are manufactured separately, the manufacturing process can be simplified. This also enhances the advantage of using the “Hall element” as an embodiment of the “magnetic field detection means” in the present invention.

Second Embodiment
Hereinafter, a second embodiment of the present invention will be described with reference to FIGS. The basic configuration of the organic EL device of the second embodiment is substantially the same as that of the organic EL device of the first embodiment. Therefore, in the following, the reference numerals of the drawings related to the parts common to both are used in common, and the description thereof is omitted.

  As shown in FIGS. 8 and 9, the organic EL device of the second embodiment uses a magnetoresistive effect element (magnetic field detection element) 601 as one embodiment of the “magnetic field detection means” referred to in the present invention.

The magnetoresistive effect element 601 is an element having a laminated structure, as shown relatively well in FIG. This laminated structure includes a first magnetic layer 611 and a second magnetic layer 621, and a nonmagnetic layer 631 sandwiched between them.
Among these, the first and second magnetic layers 611 and 621 may be made of, for example, a material mainly composed of InSb, MgO, Ga, or the like, and include Cr (chromium), Mn (manganese), Fe (iron), and Co. It is preferable that at least one magnetic material is included among (cobalt), Ni (nickel), and rare earth elements. Alternatively, in particular, a material called half metal is better. Note that a half metal refers to a substance in which all the spins of electrons involved in electric conduction are in the same direction (in other words, a substance that is 100% spin-polarized).
The nonmagnetic layer 631 is preferably made of an electrically insulating resin or an electrically insulating ceramic material.

Of the foregoing, the first and second magnetic layers 611 and 621 are provided with a first electrode 602a and a second electrode 603a so as to be in contact with each of them (see FIG. 9). As shown in FIG. 8, the first electrode 602a is a part of the first electrode wiring 602 electrically connected thereto, and the second electrode 603a is the second electrode wiring electrically connected thereto. 603. Further, the second electrode wiring 603 is further connected to a relay line 604, and this relay line 604 is further connected to a detection line 605. The detection line 605 is connected to a magnetic field detection circuit similar to that shown in FIG.
Among these various wirings, the first electrode wiring 602 including the first electrode 602a and the relay line 604 are elements formed at the same time as the above-described gate electrode 31 for the second transistor 9, and the like. The second electrode wiring 603 and the detection line 605 including 603a are elements formed simultaneously with the data line 6 and the like.

  Such a magnetoresistive effect element 601 functions as a kind of TMR type magnetoresistive effect element. That is, when a voltage is applied to the first magnetic layer 611 and the second magnetic layer 621 described above, a tunnel current flows through the nonmagnetic layer 631 therebetween. The ease of flow of this tunnel current changes according to the relationship between the magnetization direction of the first magnetic layer 611 and that of the second magnetic layer 621. If both are parallel, the electrical resistance is minimized, and if the two are antiparallel, it is maximized. In the second embodiment, the change in the magnetization direction is caused by the magnetic field generated by the current flowing through the relay line 61.

  As a result, it is apparent that the second embodiment also provides an effect that is not essentially different from the effect produced by the first embodiment described above. That is, the magnitude of the current flowing through the organic EL element 8 can be controlled according to the detection result of the magnetic field generated by the relay line 61.

In order to enjoy this effect better, the thickness of the nonmagnetic layer 631 is relatively thin compared to at least the first and second magnetic layers 611, and more specifically, for example, 0.001. It is preferable to be set to ˜0.5 μm or the like.
Similarly, in order to enjoy the effect better, it is preferable to provide a difference in coercive force between the first magnetic layer 611 and the second magnetic layer 621. In this way, the phenomenon that only the magnetization direction of one magnetic layer is changed and that of the other magnetic layer is not changed can be created relatively easily, and the magnetic field of the relay line 61 can be detected better. Because it will be able to be done. In order to give a difference in coercive force between the two layers 611 and 621, for example, an appropriate difference may be provided between the respective layers 611 and 621 with respect to the thickness and material configuration.

Furthermore, in the present invention, it is also possible to adopt a mode as shown in FIG. 10 to which this is applied in relation to the second embodiment. That is, when the magnetoresistive effect element 601 as shown in FIGS. 8 and 9 is used, a plurality of the magnetoresistive effect elements 601 are preferably provided as shown in FIG. 10 (reference numerals 601-1 and 601-2). ,..., 601-5). The plurality of magnetoresistive elements 601-1, 601-2,..., 601-5 are arranged in this order while gradually moving away along the direction orthogonal to the extending direction of the relay line 61.
According to the aspect provided with such magnetoresistive effect elements 601-1, 601-2,..., 601-5, it is obvious that the effect of R in the equation (1) is considered. In the range covered by the influence of the magnetic field generated by the flowing current, the electric resistance may be minimum, and the maximum may be generated in the other range. Also, in this case, of course, the greater the strength of the magnetic field, the greater the influence will be, so the number of magnetoresistive elements that minimize the electrical resistance increases accordingly.
In FIG. 10, the three magnetoresistive elements 601-1 to 601-3 on the left side in the drawing are “ON” (that is, the electric resistance is minimum) due to the influence of the magnetic field, and the remaining two magnetoresistive elements 601-1. The case where 4 and 601-5 are “OFF” (that is, the electric resistance is maximum) without being affected by the influence is illustrated.

According to such an aspect, it is possible to estimate the strength of the magnetic field generated by the current flowing through the relay line 61 by counting the number of magnetoresistive effect elements 601 that are “ON”. Thus, in the embodiment of FIG. 10, the strength of the magnetic field is detected by a so-called digital method.
Such a method is suitably applied to the case of the second embodiment. This is because the magnetoresistive element usually exhibits excellent performance for digital detection applications such as whether a magnetic field is applied or not, but is suitable for analog applications. This is because there is no analog operation even if such a magnetoresistive effect element is used.

Needless to say, the number of magnetoresistive elements in FIG. 10 is merely an example. How many magnetoresistive elements are provided depends on physical accuracy such as the relative relationship between the size of the formation region of the pixel electrode 13 and the size of the formation regions of the first and second magnetic layers 611 and 621, as well as the accuracy. It is appropriately determined based on various consideration factors such as appropriate consideration such as whether to perform high feedback control.
Further, in the present invention, various types such as GMR type, CMR type, AMR type and the like can be basically used in addition to the above-described TMR type as the “magnetoresistance effect element”.

As mentioned above, although embodiment concerning this invention was described, the light-emitting device concerning this invention is not limited to the form mentioned above, Various deformation | transformation are possible.
(1) As described in the above embodiments, the “magnetic field detecting means” referred to in the present invention can include “Hall element 500” or “magnetoresistance effect element 601”. Naturally, the options are not excluded. Other than the above-described elements (500 and 601), for example, a “magnetic impedance element” can be preferably used. Here, the magneto-impedance element is an element utilizing the so-called MI effect, and the MI effect means an effect that the impedance at both ends thereof changes when a magnetic field is applied to an amorphous magnetic material through which a high-frequency current flows. Such magneto-impedance elements are introduced in, for example, the literature, “Laminated thin-film magnetic field detecting element having magneto-impedance effect”, Nishibe et al., Toyota Central R & D Review, Vol 32, No. 1 (1997.3). Thus, the possibility of use as a “thin film type” magnetic field detection element has been pointed out. Such a thin film type element can be effectively used as a “magnetic field detection element” in the present invention.
Alternatively, depending on the case, a plurality of types of magnetic field detection elements including those described above may be used simultaneously in one apparatus.
In short, the “magnetic field detecting means” or “magnetic field detecting element” referred to in the present invention can basically take any form as long as it can detect the magnetic field generated around the “wiring”. it can.

(2) In each of the embodiments described above, the detection target of the Hall element 500 or the magnetoresistive effect element 601 is the relay line 61 (precisely, “the magnetic field generated therearound”, but the same shall be omitted hereinafter). However, the present invention is not limited to such a form. For example, in some cases, a wiring (not shown) connected to the counter electrode 5 may be a detection target, or both the wiring and the relay line 61 may be a detection target. In particular, in the latter case, the current state of the organic EL element 8 can be grasped more accurately, and therefore the feedback control as described above can be performed better.

(3) In the second embodiment, a mode in which a plurality of magnetoresistive elements 601 are arranged has been described with reference to FIG. 10, but this mode can be applied to the Hall element 500 of the first embodiment described above or the same. It is applicable to various elements other than. In any case, it contributes to better detection of the strength of the magnetic field.

<Application example>
Next, an electronic apparatus using the light emitting device according to the present invention will be described. 11 to 13 show forms of electronic devices that employ the organic EL device according to the embodiment described above.

  FIG. 11 is a perspective view showing the configuration of a mobile personal computer employing an organic EL device. The personal computer 2000 includes an organic EL device 100 that displays various images, and a main body 2010 on which a power switch 2001 and a keyboard 2002 are installed.

  FIG. 12 is a perspective view showing a configuration of a mobile phone to which the organic EL device 100 is applied. The cellular phone 3000 includes a plurality of operation buttons 3001, scroll buttons 3002, and the organic EL device 100 that displays various images. By operating the scroll button 3002, the screen displayed on the organic EL device 100 is scrolled.

  FIG. 13 is a perspective view showing a configuration of a personal digital assistant (PDA) to which the organic EL device 100 is applied. The portable information terminal 4000 includes a plurality of operation buttons 4001, a power switch 4002, and the organic EL device 100 that displays various images. When the power switch 4002 is operated, various information such as an address book and a schedule book are displayed on the organic EL device 100.

  As electronic devices to which the light emitting device according to the present invention is applied, in addition to the devices illustrated in FIGS. 11 to 13, digital still cameras, televisions, video cameras, pagers, electronic notebooks, electronic papers, calculators, word processors, workstations Video phones, POS terminals, printers, scanners, copiers, video players, car navigation systems, and the like.

1 is a plan view showing a schematic configuration of an organic EL device according to a first embodiment of the present invention. FIG. 2 is a circuit diagram showing details of a unit circuit in FIG. 1. FIG. 2 is a partially enlarged plan view of the organic EL device shown in FIG. 1, particularly showing the arrangement of Hall elements 500 and elements related thereto (In this figure, contact holes represented by reference numeral 361 and the like are appropriate) Only the main part is shown in the figure. FIG. 4 is a cross-sectional view taken along line X1-X1 ′ of FIG. 3. FIG. 6 is a diagram schematically showing a state in which a magnetic field generated by a current flowing through the relay line 61 is applied to the Hall element 500. FIG. 4 is a sectional view taken along line X2-X2 ′ of FIG. 3. It is a graph showing the electric current-luminance characteristic of an organic EL element. FIG. 4 is a diagram having the same concept as in FIG. 3, and is a partially enlarged plan view of the organic EL device according to the second embodiment of the present invention, and particularly shows the arrangement of the Hall element 500 and related elements. FIG. 4 is a sectional view taken along line Y-Y ′ of FIG. 3. FIG. 9 is a diagram schematically showing an aspect in which a plurality of magnetoresistive elements 601 shown in FIGS. 7 and 8 are arranged along the direction intersecting the relay line 61. It is a perspective view which shows the form (personal computer) of the electronic device which concerns on this invention. It is a perspective view which shows the form (cellular phone) of the electronic device which concerns on this invention. It is a perspective view which shows the form (mobile information terminal) of the electronic device which concerns on this invention.

Explanation of symbols

7 ... Element substrate, 7a ... Image display area, 8 ... Organic EL element, 13 ... Pixel electrode, 18 ... Light emitting functional layer, 5 ... Counter electrode, 9 ... Second transistor (drive transistor), DESCRIPTION OF SYMBOLS 1 ... Semiconductor layer, 61 ... Relay line, 500 ... Hall element, 501 ... Semiconductor layer, 502, 503 ... 1st, 2nd current supply line, 504, 505 ... 1st, 2nd voltage detection 550... Magnetic field detection circuit, C... Organic EL device control circuit, 601... Magnetoresistive element, 602... First electrode wiring, 602 a. 603a ... second electrode,
3 ... Scanning line, 6 ... Data line, 113 ... Power supply line, 34 ... Reflective layer, 103A, 103B ... Scanning line drive circuit, 106 ... Data line drive circuit, 106A ... Precharge circuit, 201 …… Power line

Claims (10)

A substrate,
A light-emitting element including first and second electrode layers constructed on the substrate, and a light-emitting functional layer sandwiched between the first and second electrode layers;
A wiring electrically connected to one of the first and second electrode layers;
Magnetic field detection means for detecting a magnetic field generated by the current flowing in the wiring;
Control means for controlling the magnitude of the current flowing through the light emitting element according to the detection result of the magnetic field detection means;
Comprising
A light emitting device characterized by that. The magnetic field detection means includes a Hall element,
The light-emitting device according to claim 1. A driving transistor for driving the light emitting element;
A first semiconductor layer included in the driving transistor and electrically connected to the first electrode layer;
Further comprising
The Hall element is
A second semiconductor layer formed on the base film on which the first semiconductor layer is formed and simultaneously with the first semiconductor layer;
The light-emitting device according to claim 2. The magnetic field detection means includes a magnetoresistive effect element,
The light-emitting device according to any one of claims 1 to 3. The magnetic field detection means includes a magneto-impedance element,
The light emitting device according to claim 1, wherein the light emitting device is a light emitting device. The magnetic field detection means includes a magnetic field detection element,
The magnetic field sensing element is
When the substrate is viewed in plan, it is formed so as to overlap a part of the formation region of the light emitting functional layer, and
Of the first and second electrode layers, the electrode layer on the side where the magnetic field detection element does not exist as seen from the light emitting functional layer has translucency,
The light emitting device according to claim 1, wherein the light emitting device is a light emitting device. The magnetic field detection means includes a plurality of magnetic field detection elements,
These multiple magnetic field sensing elements
Aligned along the direction intersecting the extending direction of the wiring,
The light emitting device according to any one of claims 1 to 6. The magnetic field detection means includes a magnetic field detection element,
The magnetic field sensing element is
Formed by sandwiching at least one interlayer insulating film between the wirings;
The light emitting device according to claim 1, wherein the light emitting device is a light emitting device. The wiring is
A first wiring electrically connected to the first electrode layer; and a second wiring electrically connected to the second electrode layer;
The magnetic field detecting means includes
A first magnetic field detection element corresponding to the first wiring, and a second magnetic field detection element corresponding to the second wiring,
The light emitting device according to claim 1, wherein the light emitting device is a light emitting device. The light-emitting device according to claim 1.
An electronic device characterized by that.

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