JP2009194398A5 - - Google Patents
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- JP2009194398A5 JP2009194398A5 JP2009125700A JP2009125700A JP2009194398A5 JP 2009194398 A5 JP2009194398 A5 JP 2009194398A5 JP 2009125700 A JP2009125700 A JP 2009125700A JP 2009125700 A JP2009125700 A JP 2009125700A JP 2009194398 A5 JP2009194398 A5 JP 2009194398A5
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- JP
- Japan
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009125700A JP2009194398A (ja) | 2009-05-25 | 2009-05-25 | 磁気抵抗効果素子、及び磁気抵抗効果素子を備えた磁気記憶装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009125700A JP2009194398A (ja) | 2009-05-25 | 2009-05-25 | 磁気抵抗効果素子、及び磁気抵抗効果素子を備えた磁気記憶装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007104161A Division JP2008263031A (ja) | 2007-04-11 | 2007-04-11 | 磁気抵抗効果素子とその製造方法、磁気抵抗効果素子を備えた磁気記憶装置とその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009194398A JP2009194398A (ja) | 2009-08-27 |
| JP2009194398A5 true JP2009194398A5 (ja) | 2009-10-08 |
Family
ID=41076079
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009125700A Pending JP2009194398A (ja) | 2009-05-25 | 2009-05-25 | 磁気抵抗効果素子、及び磁気抵抗効果素子を備えた磁気記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2009194398A (ja) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011030826A1 (ja) * | 2009-09-11 | 2011-03-17 | 株式会社 アルバック | 薄膜形成方法及び薄膜形成装置 |
| TWI440236B (zh) * | 2009-12-28 | 2014-06-01 | Canon Anelva Corp | Method for manufacturing magnetoresistive elements |
| JP4903277B2 (ja) * | 2010-01-26 | 2012-03-28 | 株式会社日立製作所 | 磁気抵抗効果素子、それを用いた磁気メモリセル及びランダムアクセスメモリ |
| JP5725735B2 (ja) * | 2010-06-04 | 2015-05-27 | 株式会社日立製作所 | 磁気抵抗効果素子及び磁気メモリ |
| TW201440271A (zh) * | 2013-03-07 | 2014-10-16 | Tokyo Electron Ltd | 平坦化方法、基板處理系統、ｍｒａｍ製造方法及ｍｒａｍ元件 |
| US11522126B2 (en) | 2019-10-14 | 2022-12-06 | Applied Materials, Inc. | Magnetic tunnel junctions with protection layers |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002314164A (ja) * | 2001-02-06 | 2002-10-25 | Sony Corp | 磁気トンネル素子及びその製造方法、薄膜磁気ヘッド、磁気メモリ、並びに磁気センサ |
| JP4435521B2 (ja) * | 2002-09-11 | 2010-03-17 | 株式会社東芝 | 磁気抵抗効果素子の製造方法 |
| JP2005268251A (ja) * | 2004-03-16 | 2005-09-29 | Yamaha Corp | トンネル接合素子と複合酸化膜の形成方法 |
| US7780820B2 (en) * | 2005-11-16 | 2010-08-24 | Headway Technologies, Inc. | Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier |
| JP2007305768A (ja) * | 2006-05-11 | 2007-11-22 | Tdk Corp | トンネル磁気抵抗効果素子の製造方法、薄膜磁気ヘッドの製造方法及び磁気メモリの製造方法 |
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2009
- 2009-05-25 JP JP2009125700A patent/JP2009194398A/ja active Pending