JP2009188167A - Method for manufacturing light-emitting device - Google Patents

Method for manufacturing light-emitting device Download PDF

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Publication number
JP2009188167A
JP2009188167A JP2008026309A JP2008026309A JP2009188167A JP 2009188167 A JP2009188167 A JP 2009188167A JP 2008026309 A JP2008026309 A JP 2008026309A JP 2008026309 A JP2008026309 A JP 2008026309A JP 2009188167 A JP2009188167 A JP 2009188167A
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resin
preparing
silane coupling
sealing resin
sealing
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Shigeo Takeda
重郎 武田
Toshio Yamaguchi
寿夫 山口
Hiroyuki Tajima
博幸 田嶌
Koji Fukagawa
鋼司 深川
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Toyoda Gosei Co Ltd
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Toyoda Gosei Co Ltd
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Priority to JP2008026309A priority Critical patent/JP2009188167A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/3201—Structure
    • H01L2224/32012—Structure relative to the bonding area, e.g. bond pad
    • H01L2224/32013—Structure relative to the bonding area, e.g. bond pad the layer connector being larger than the bonding area, e.g. bond pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a light-emitting device, capable of surely suppressing lifting of a first resin sealing a light-emitting element, and to provide a second resin that coats the first resin. <P>SOLUTION: The method includes a first preparation step (S30) preparing a first formulation by preparing a resin base agent and a curing agent; a second preparation step (S40) preparing a second formulation by preparing phosphor and silane coupling agent; a resin forming step (S50) preparing a first resin by preparing the first formulation and the second formulation; sealing steps (S60 and S70) sealing a LED element with the first resin; and a coating step (S80) coating the first resin, with which the LED is coated, with the second resin, wherein by preparing the silane coupling agent with the phosphor, the reactivity of the silane coupling agent is improved. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、発光素子が第１樹脂により封止され、第１樹脂が第２樹脂により被覆される発光装置の製造方法に関する。   The present invention relates to a method for manufacturing a light emitting device in which a light emitting element is sealed with a first resin and the first resin is covered with a second resin.

従来から、特許文献１に記載されているように、一対の配線導体にそれぞれ電気的に接続された複数の電極を有する半導体発光素子と、この半導体発光素子の発光部を被覆する内部光透過層（第１樹脂）と、この内部光透過層を被覆する外部光透過層（第２樹脂）とを備え、半導体発光素子から照射された光が内部光透過層及び外部光透過層を経て外部に放出される半導体発光装置が知られている。特許文献１には、内部光透過層の表面にシランカップリング剤等の無機・有機界面結合剤より成る結合膜を形成して、内部光透過層と外部光透過層との界面での剥離を防ぐことができる、と記載されている。
特開平１０−１９００６５号公報 Conventionally, as described in Patent Document 1, a semiconductor light emitting device having a plurality of electrodes electrically connected to a pair of wiring conductors, and an internal light transmission layer covering a light emitting portion of the semiconductor light emitting device (First resin) and an external light transmission layer (second resin) that covers the internal light transmission layer, and the light emitted from the semiconductor light emitting element is exposed to the outside through the internal light transmission layer and the external light transmission layer. Emitted semiconductor light emitting devices are known. In Patent Document 1, a bonding film made of an inorganic / organic interface binder such as a silane coupling agent is formed on the surface of the internal light transmission layer, and peeling at the interface between the internal light transmission layer and the external light transmission layer is performed. It is described that it can be prevented.
Japanese Patent Laid-Open No. 10-190065

しかしながら、シランカップリング剤の結合膜を第１樹脂の表面に形成すると、この形成工程の分だけ工数が増大する。また、この結合膜を用いても、封止樹脂と被覆樹脂の剥離抑制作用が未だ不十分であり、封止樹脂と被覆樹脂の剥離の問題は解消されていない。   However, if a silane coupling agent binding film is formed on the surface of the first resin, the number of steps increases by the amount of this forming step. Further, even when this bonding film is used, the effect of suppressing the peeling between the sealing resin and the coating resin is still insufficient, and the problem of peeling between the sealing resin and the coating resin has not been solved.

本発明は、前記事情に鑑みてなされたものであり、その目的とするところは、発光素子を封止する第１樹脂と第１樹脂を被覆する第２樹脂との剥離を的確に抑制することのできる発光装置の製造方法を提供することである。   This invention is made | formed in view of the said situation, The place made into the objective suppresses peeling with 1st resin which seals a light emitting element, and 2nd resin which coat | covers 1st resin exactly. It is providing the manufacturing method of the light-emitting device which can be performed.

前記目的を達成するため、本発明では、樹脂主剤及び硬化剤を調合して第１調合物を作製する第１調合工程と、蛍光体及びシランカップリング剤を調合して第２調合物を作製する第２調合工程と、前記第１調合物及び前記第２調合物を調合して第１樹脂を作製する第１樹脂作製工程と、前記第１樹脂によりＬＥＤ素子を封止する封止工程と、前記ＬＥＤ素子を封止した前記第１樹脂を第２樹脂により被覆する被覆工程と、を含む発光装置の製造方法が提供される。   In order to achieve the above object, in the present invention, a first preparation step of preparing a first preparation by preparing a resin main ingredient and a curing agent, and preparing a second preparation by preparing a phosphor and a silane coupling agent. A second preparation step, a first resin preparation step of preparing the first resin by preparing the first preparation and the second preparation, and a sealing step of sealing the LED element with the first resin. And a coating step of coating the first resin sealing the LED element with a second resin.

上記発光装置において、前記シランカップリング剤は、有機官能基がエポキシ基であり、前記第２樹脂は、エポキシ樹脂であることが好ましい。   In the light-emitting device, the silane coupling agent preferably has an organic functional group as an epoxy group, and the second resin is an epoxy resin.

上記発光装置において、前記第１樹脂は、シリコーンであることが好ましい。   In the light emitting device, the first resin is preferably silicone.

上記発光装置において、前記シランカップリング剤は、加水分解基がアルコキシシリル基であることが好ましい。   In the above light-emitting device, the silane coupling agent preferably has a hydrolyzable group as an alkoxysilyl group.

本発明によれば、発光素子を封止する第１樹脂と第１樹脂を被覆する第２樹脂との剥離を的確に抑制することができる。   ADVANTAGE OF THE INVENTION According to this invention, peeling with 1st resin which seals a light emitting element and 2nd resin which coat | covers 1st resin can be suppressed exactly.

図１及び図２は本発明の一実施形態を示すもので、図１は発光装置の模式断面図である。   1 and 2 show an embodiment of the present invention, and FIG. 1 is a schematic sectional view of a light emitting device.

図１に示すように、発光装置１は、砲弾型のＬＥＤ装置であり、ＬＥＤチップ２と、ＬＥＤチップ２へ電力供給するための第１リード３及び第２リード４と、ＬＥＤチップ２と第１リード３及び第２リード４を電気的に接続するワイヤ５，６と、を備えている。第１リード３はＬＥＤチップ２が搭載されるカップ部３ａを先端に有し、このカップ部３ａの内側には封止樹脂７が充填されている。また、発光装置１は、第１リード３及び第２リード４の先端を被覆するとともに、封止樹脂７との界面を有する被覆樹脂８を備えている。   As shown in FIG. 1, the light emitting device 1 is a bullet-type LED device, and includes an LED chip 2, a first lead 3 and a second lead 4 for supplying power to the LED chip 2, an LED chip 2, Wires 5 and 6 that electrically connect the first lead 3 and the second lead 4 are provided. The first lead 3 has a cup portion 3a on which the LED chip 2 is mounted at the tip, and a sealing resin 7 is filled inside the cup portion 3a. The light emitting device 1 includes a coating resin 8 that covers the tips of the first lead 3 and the second lead 4 and has an interface with the sealing resin 7.

ＬＥＤチップ２は、フェイスアップ型であり、青色光を発するＧａＮ系の発光層を有している。ＬＥＤチップ２は、カップ部３ａの内側の底面に接着剤９を介して搭載される。尚、ＬＥＤチップ２の発光色、材質、型式等は特に限定されるものでなく、例えば、紫外光を発するものであったり、フリップチップ型であってもよく、発光装置１の仕様等に応じて適宜変更することができる。   The LED chip 2 is a face-up type and has a GaN-based light emitting layer that emits blue light. The LED chip 2 is mounted via an adhesive 9 on the inner bottom surface of the cup portion 3a. Note that the emission color, material, type, and the like of the LED chip 2 are not particularly limited. For example, the LED chip 2 may emit ultraviolet light or may be a flip chip type. Can be changed as appropriate.

第１リード３及び第２リード４は、導電性の金属又は合金からなり、先端から基端へ向かって互いに平行に延びる。ワイヤ５，６は、導電性の金属又は合金からなり、ＬＥＤチップ２の電極と、第１リード３及び第２リード４の先端とを接続している。   The first lead 3 and the second lead 4 are made of a conductive metal or alloy, and extend parallel to each other from the distal end to the proximal end. The wires 5 and 6 are made of a conductive metal or alloy, and connect the electrode of the LED chip 2 to the tips of the first lead 3 and the second lead 4.

第１樹脂としての封止樹脂７は、透明樹脂からなる主剤と、硬化剤、蛍光体及びシランカップリング剤とを調合して作製される。本実施形態においては、透明樹脂７の主剤はメチルシリコーンとビニルシリコーンの混合剤であり、硬化剤はメチルシリコーン、ビニルシリコーン及びヒドロシリコーンの混合剤である。   The sealing resin 7 as the first resin is prepared by blending a main agent made of a transparent resin, a curing agent, a phosphor, and a silane coupling agent. In this embodiment, the main component of the transparent resin 7 is a mixture of methyl silicone and vinyl silicone, and the curing agent is a mixture of methyl silicone, vinyl silicone, and hydrosilicone.

蛍光体は、無機材であり、本実施形態においてはＢＯＳ（Barium ortho-Silicate）系のものが用いられる。尚、蛍光体は、例えば、ＹＡＧ（Yttrium Aluminum Garnet）系のものを用いてもよい。蛍光体は、ＬＥＤチップ２から発せられた青色光を受けて励起されると、黄色の波長変換光を発する。この結果、青色光と黄色光とが混ざった白色光がカップ部３ａから取り出される。   The phosphor is an inorganic material, and in this embodiment, a BOS (Barium ortho-Silicate) type is used. For example, a YAG (Yttrium Aluminum Garnet) type phosphor may be used. When the phosphor is excited by receiving blue light emitted from the LED chip 2, the phosphor emits yellow wavelength-converted light. As a result, white light in which blue light and yellow light are mixed is extracted from the cup portion 3a.

シランカップリング剤は、加水分解基を有し、水と接すると加水分解してシラノール基を生成する。シラノール基は自己縮合によって高分子化すると同時に、金属表面のＯＨ基と酸塩基反応で化学結合する。また、シランカップリング剤は、有機官能基を有し、有機成分と化学結合又は架橋して強固に結合する。本実施形態においては、加水分解基はアルコキシシリル基であり、有機官能基はエポキシ基である。   The silane coupling agent has a hydrolyzable group and hydrolyzes when it comes into contact with water to generate a silanol group. Silanol groups are polymerized by self-condensation and at the same time chemically bonded to OH groups on the metal surface by acid-base reaction. Further, the silane coupling agent has an organic functional group and is firmly bonded by chemical bonding or crosslinking with an organic component. In the present embodiment, the hydrolyzable group is an alkoxysilyl group, and the organic functional group is an epoxy group.

第２樹脂としての被覆樹脂８は、熱膨張係数が封止樹脂７と異なる透明樹脂からなる。本実施形態においては、被覆樹脂８の主剤として、脂環式エポキシとビスフェノールＡの混合剤が用いられている。尚、被覆樹脂８には、酸無水物硬化タイプの硬化剤が調合されている。   The coating resin 8 as the second resin is made of a transparent resin having a thermal expansion coefficient different from that of the sealing resin 7. In the present embodiment, a mixture of alicyclic epoxy and bisphenol A is used as the main component of the coating resin 8. The coating resin 8 is prepared with an acid anhydride curing type curing agent.

図２は、発光装置の製造工程を示す工程説明図である。
図２に示すように、この発光装置１を製造するにあたり、第１リード３にＬＥＤチップ２を接着剤９を用いて搭載し（搭載工程：Ｓ１０）、ワイヤ５，６によりＬＥＤチップ２と第１リード３及び第２リード４とを電気的に接続する（ボンディング工程：Ｓ２０）。 FIG. 2 is a process explanatory diagram illustrating a manufacturing process of the light emitting device.
As shown in FIG. 2, in manufacturing the light emitting device 1, the LED chip 2 is mounted on the first lead 3 by using the adhesive 9 (mounting process: S 10), and the LED chip 2 and the first chip 3 are connected by the wires 5 and 6. The first lead 3 and the second lead 4 are electrically connected (bonding step: S20).

また、各リード３，４等とは別個に、封止樹脂７を作製する。まず、封止樹脂７の主剤及び硬化剤を予め調合して第１調合物を作製する（第１調合工程：Ｓ３０）。具体的に、主剤と硬化剤の調合は、常温にて混合することにより行う。また、第１調合物とは別個に、蛍光体及びシランカップリング剤を調合して第２調合物を作製する（第２調合工程：Ｓ４０）。具体的に、蛍光体とシランカップリング剤の調合は、常温にて混合することにより行う。この後、第１調合物と第２調合物を調合し、脱泡することにより、封止樹脂７を作製する（封止樹脂作製工程：Ｓ５０）。具体的に、第１調合物と第２調合物の調合は、常温にて混合することにより行う。このように作製された封止樹脂７を加熱して第１リード３のカップ部３ａにポッティングにより充填し（充填工程：Ｓ６０）、封止樹脂７を硬化させる（硬化工程：Ｓ６０）。封止樹脂７が硬化した後、被覆樹脂８を型を用いて封止樹脂７、各リード３，４の先端等を覆うよう成形する（被覆樹脂成形工程：Ｓ７０）。   Further, the sealing resin 7 is produced separately from the leads 3 and 4 and the like. First, the main ingredient and hardening | curing agent of the sealing resin 7 are previously prepared, and a 1st preparation is produced (1st preparation process: S30). Specifically, the main agent and the curing agent are mixed by mixing at room temperature. Separately from the first preparation, the second preparation is prepared by preparing the phosphor and the silane coupling agent (second preparation step: S40). Specifically, the phosphor and the silane coupling agent are prepared by mixing at room temperature. Thereafter, the first formulation and the second formulation are prepared and defoamed to prepare the sealing resin 7 (sealing resin manufacturing step: S50). Specifically, the first formulation and the second formulation are mixed by mixing at room temperature. The sealing resin 7 thus manufactured is heated to fill the cup portion 3a of the first lead 3 by potting (filling step: S60), and the sealing resin 7 is cured (curing step: S60). After the sealing resin 7 is cured, the coating resin 8 is molded using a mold so as to cover the sealing resin 7 and the tips of the leads 3 and 4 (coating resin molding step: S70).

このように、蛍光体及びシランカップリング剤を、主剤及び硬化剤と調合する前に予め調合しておくことにより、シランカップリング剤が無機物である蛍光体の周囲に配向され、シランカップリング剤の反応性を高めることができる。これにより、封止樹脂７と被覆樹脂８との接合性が向上し、被覆樹脂８の成形時に封止樹脂７と被覆樹脂８との界面に比較的大きな凹凸が形成されてこれらが互いに密着し、これらの熱膨張率の差により生じる封止樹脂７と被覆樹脂８との剥離を抑制することができる。従って、従来の製法では剥離が生じるような封止樹脂７と被覆樹脂８の組成であっても剥離が抑制され、選定可能な封止樹脂７と被覆樹脂８の種類、組成範囲等が増大し、実用に際して極めて有利である。   Thus, by preparing the phosphor and the silane coupling agent in advance before the main agent and the curing agent are prepared, the silane coupling agent is oriented around the phosphor that is an inorganic substance, and the silane coupling agent is thus prepared. Can increase the reactivity. As a result, the bonding property between the sealing resin 7 and the coating resin 8 is improved, and when the coating resin 8 is molded, relatively large irregularities are formed at the interface between the sealing resin 7 and the coating resin 8, and these are in close contact with each other. Further, peeling between the sealing resin 7 and the coating resin 8 caused by the difference between these thermal expansion coefficients can be suppressed. Therefore, even if the composition of the sealing resin 7 and the coating resin 8 causes peeling in the conventional manufacturing method, the peeling is suppressed, and the types and composition ranges of the sealing resin 7 and the coating resin 8 that can be selected are increased. It is extremely advantageous in practical use.

また、封止樹脂７のシランカップリング剤の有機官能基をエポキシ基とし、被覆樹脂８をエポキシ樹脂としたので、封止樹脂７と被覆樹脂８の接着性が良好である。   Further, since the organic functional group of the silane coupling agent of the sealing resin 7 is an epoxy group and the coating resin 8 is an epoxy resin, the adhesion between the sealing resin 7 and the coating resin 8 is good.

尚、封止樹脂７と被覆樹脂８の剥離の抑制効果は、封止樹脂７の硬度を低くすることにより向上させることができる。封止樹脂７の硬度は、封止樹脂７の分子量を小さくしたり、硬化剤の量を少なくすることにより低くすることができる。   In addition, the suppression effect of peeling of the sealing resin 7 and the coating resin 8 can be improved by reducing the hardness of the sealing resin 7. The hardness of the sealing resin 7 can be lowered by reducing the molecular weight of the sealing resin 7 or decreasing the amount of the curing agent.

図３は本発明の実施例の封止樹脂の界面状態を示す画像データである。この画像データは、３．５倍の接眼レンズと１．５倍の対物レンズを用い、顕微鏡を利用して撮像した画像データに対して、エンボス処理等を施した得られたものである。
本実施形態の製造方法の剥離抑制作用は実験により確認されており、図３に実施例の界面状態を示す。実験に際し、封止樹脂７の主剤としてメチルシリコーンとビニルシリコーンの重量比が９９．３：０．７のものを用い、硬化剤としてメチルシリコーン：ビニルシリコーン：ヒドロシリコーンの重量比が８２．９：０．６：１７．５のものを用いた。具体的には、封止樹脂７の主剤は、東レ・ダウコーニング社製の「ＪＣＲ６１２５ Ａ」を使用し、硬化剤は、東レ・ダウコーニング社製の「ＪＣＲ６１２５ Ｂ」を使用した。また、シランカップリング剤としてγ-グリシドキシプロピルトリメトキシシラン（分子量２３６．１）を用い、具体的にはモメンティブ・パフォーマンス・マテリアルズ・ジャパン社製の「Ａ−１８７」を使用した。また、蛍光体として（Ｓｒ，Ｂａ）２ＳｉＯ４：Ｅｕ２＋を用いた。そして、主剤、硬化剤、蛍光体及びシランカップリング剤の重量比を、１０：１：５：５とした。また、被覆樹脂８の主剤としてビスフェノールＡと脂環式エポキシの重量比が５８：４２のものを用い、硬化剤としてメチルヘキサヒドロ無水フタル酸を用いた。具体的には、被覆樹脂８の主剤は、ファインポリマーズ社製の「Ｘ１７８７」を使用し、硬化剤は、ファインポリマーズ社製の「Ｈ６７８」を使用した。この封止樹脂７と被覆樹脂８の組合せで、本実施形態の製造方法により１８個の試料体を作製したところ、封止樹脂７と被覆樹脂８との剥離が確認されたものはなかった。また、各試料体の封止樹脂７と被覆樹脂８との界面を観察したところ、図３に示すように、樹脂界面には凹凸が形成されて各樹脂が互いに密着していた。 FIG. 3 is image data showing the interface state of the sealing resin of the embodiment of the present invention. This image data is obtained by embossing the image data captured using a microscope using a 3.5 × eyepiece and a 1.5 × objective lens.
The peeling inhibiting action of the manufacturing method of this embodiment has been confirmed by experiments, and FIG. 3 shows the interface state of the example. In the experiment, the weight ratio of methylsilicone to vinylsilicone is 99.3: 0.7 as the main component of the sealing resin 7 and the weight ratio of methylsilicone: vinylsilicone: hydrosilicone is 82.9: 0.6: 17.5 was used. Specifically, “JCR6125 A” manufactured by Toray Dow Corning was used as the main component of the sealing resin 7, and “JCR6125 B” manufactured by Toray Dow Corning was used as the curing agent. Further, γ-glycidoxypropyltrimethoxysilane (molecular weight 236.1) was used as a silane coupling agent, and specifically, “A-187” manufactured by Momentive Performance Materials Japan was used. In addition, (Sr, Ba) 2 SiO 4 : Eu 2+ was used as the phosphor. The weight ratio of the main agent, curing agent, phosphor and silane coupling agent was 10: 1: 5: 5. Further, as the main component of the coating resin 8, one having a weight ratio of bisphenol A and alicyclic epoxy of 58:42 was used, and methylhexahydrophthalic anhydride was used as the curing agent. Specifically, “X1787” manufactured by Fine Polymers was used as the main component of the coating resin 8, and “H678” manufactured by Fine Polymers was used as the curing agent. With the combination of the sealing resin 7 and the coating resin 8, 18 sample bodies were produced by the manufacturing method of the present embodiment, and no separation of the sealing resin 7 and the coating resin 8 was confirmed. Further, when the interface between the sealing resin 7 and the coating resin 8 of each sample body was observed, as shown in FIG. 3, the resin interface was uneven and the resins were in close contact with each other.

また、硬化剤の量を少なくすることにより、液相冷熱衝撃試験後であっても、封止樹脂７と被覆樹脂８の界面に剥離が生じ難くなることが確認されている。特に、試験条件を−４０℃で５分間、１００℃で５分間として１００サイクル行った際に、硬化剤の重量が主剤を１００として場合に３以下であると、各試料体には剥離が全く生じないことが確認されている。   Further, it has been confirmed that by reducing the amount of the curing agent, peeling is less likely to occur at the interface between the sealing resin 7 and the coating resin 8 even after the liquid phase thermal shock test. In particular, when the test conditions were set to −40 ° C. for 5 minutes and 100 ° C. for 5 minutes for 100 cycles, when the weight of the curing agent was 3 or less when the main agent was 100, each sample body had no peeling. It has been confirmed that this will not occur.

図４は比較例における封止樹脂と被覆樹脂の剥離状態を示す模式説明図であり、図５は第１の比較例の封止樹脂の界面状態を示す画像データである。この画像データは、３．５倍の接眼レンズと１．５倍の対物レンズを用い、顕微鏡を利用して撮像した画像データに対して、エンボス処理等を施した得られたものである。
前述の実施例と同じ組成の封止樹脂７及び被覆樹脂８を用いて比較実験を行った。第１の比較例では、封止樹脂７の主剤及び硬化剤を予め調合した第１調合物に、蛍光体を混入させた後、シランカップリング剤を混入し調合して試料体を作製した。この製造方法により１８個の試料体を作製したところ、図４に示すように、３個の試料体にて封止樹脂７と被覆樹脂８の剥離が確認され、これらの間に空隙Ｓが形成されていた。また、これらの試料体の封止樹脂７と被覆樹脂８との界面を観察したところ、図５に示すように、これらの界面の表面が微小に荒れているものの、大きな凹凸は確認されなかった。 FIG. 4 is a schematic explanatory view showing the peeled state of the sealing resin and the coating resin in the comparative example, and FIG. 5 is image data showing the interface state of the sealing resin of the first comparative example. This image data is obtained by embossing the image data captured using a microscope using a 3.5 × eyepiece and a 1.5 × objective lens.
A comparative experiment was performed using the sealing resin 7 and the coating resin 8 having the same composition as in the above-described example. In the first comparative example, a phosphor was mixed in a first formulation in which the main component and the curing agent of the sealing resin 7 were preliminarily mixed, and then a silane coupling agent was mixed and prepared to prepare a sample body. When 18 sample bodies were produced by this manufacturing method, as shown in FIG. 4, peeling of the sealing resin 7 and the coating resin 8 was confirmed in the three sample bodies, and a void S was formed between them. It had been. Further, when the interface between the sealing resin 7 and the coating resin 8 of these sample bodies was observed, the surface of these interfaces was slightly rough as shown in FIG. .

図６は第２の比較例の封止樹脂の界面状態を示す画像データである。この画像データは、３．５倍の接眼レンズと１．５倍の対物レンズを用い、顕微鏡を利用して撮像した画像データに対して、エンボス処理等を施した得られたものである。
前述の実施例と同じ組成の封止樹脂７及び被覆樹脂８を用いて比較実験を行った。第２の比較例では、蛍光体及びシランカップリング剤を予め調合した第２調合物に、封止樹脂７の主剤を混入した後、硬化剤を混入し調合して試料体を作製した。この製造方法により１８個の試料体を作製したところ、５個の試料体にて封止樹脂７と被覆樹脂８の剥離が確認された。これらの試料体の封止樹脂７と被覆樹脂８との界面を観察したところ、図６に示すように、これらの界面の表面が微小に荒れているものの、大きな凹凸は確認されなかった。 FIG. 6 is image data showing the interface state of the sealing resin of the second comparative example. This image data is obtained by embossing the image data captured using a microscope using a 3.5 × eyepiece and a 1.5 × objective lens.
A comparative experiment was performed using the sealing resin 7 and the coating resin 8 having the same composition as in the above-described example. In the second comparative example, a sample body was prepared by mixing the main component of the sealing resin 7 in a second formulation prepared in advance with a phosphor and a silane coupling agent, and then mixing and mixing a curing agent. When 18 sample bodies were produced by this manufacturing method, peeling of the sealing resin 7 and the coating resin 8 was confirmed in 5 sample bodies. When the interface between the sealing resin 7 and the coating resin 8 of these sample bodies was observed, as shown in FIG. 6, although the surface of these interfaces was slightly rough, large irregularities were not confirmed.

尚、前記実施形態においては、砲弾型のＬＥＤ装置を示したが、例えば図７に示すように、表面実装型のＬＥＤ装置であってもよいことは勿論である。図７の発光装置１０１では、凹部１１０ａが形成された樹脂製のケース１１０の内部にＬＥＤチップ２が搭載され、凹部１１０ａ内のＬＥＤチップ２側に封止樹脂７が充填され、凹部１１０ａ内の開口側が被覆樹脂８により覆われている。また、ＬＥＤチップ２が凹部１１０ａ内の底部に配置される第１リード１０３に接着剤を介して搭載されている。さらにまた、ＬＥＤチップ２は、第１リード１０３及び第２リード１０４と、ワイヤ５，６により電気的に接続されている。   In the above embodiment, the bullet-type LED device is shown. However, as shown in FIG. 7, for example, a surface-mount type LED device may be used. In the light emitting device 101 of FIG. 7, the LED chip 2 is mounted inside the resin case 110 in which the recess 110a is formed, and the sealing resin 7 is filled on the LED chip 2 side in the recess 110a. The opening side is covered with a coating resin 8. Further, the LED chip 2 is mounted on the first lead 103 disposed at the bottom in the recess 110a via an adhesive. Furthermore, the LED chip 2 is electrically connected to the first lead 103 and the second lead 104 by wires 5 and 6.

また、前記実施形態においては、封止樹脂７としてメチルシリコーンを主成分としたものを示したが、他のシリコーンを主成分としたものであってもよく、封止樹脂７の主剤及び被覆樹脂８の主剤の組成は適宜に変更することができる。また、封止樹脂７のシランカップリング剤として例えばγ-グリシドキシプロピルメチルジメトキシシラン（分子量２２０．３）を用いてもよく、シランカップリング剤や硬化剤も適宜に変更が可能である。   Moreover, in the said embodiment, although the thing which has methyl silicone as a main component was shown as the sealing resin 7, the thing which has another silicone as a main component may be sufficient, and the main ingredient and coating resin of the sealing resin 7 may be sufficient as it. The composition of the main agent of 8 can be changed as appropriate. Further, for example, γ-glycidoxypropylmethyldimethoxysilane (molecular weight 220.3) may be used as the silane coupling agent of the sealing resin 7, and the silane coupling agent and the curing agent can be appropriately changed.

また、前記実施形態においては、青色のＬＥＤチップ２と黄色の蛍光体の組合せにより白色光を得るものを示したが、例えば、紫外のＬＥＤチップと、青色、緑色及び赤色の蛍光体の組合せにより白色光を得るものとしてもよく、その他、具体的な細部構造等についても適宜に変更可能であることは勿論である。   Moreover, in the said embodiment, although what obtained white light by the combination of blue LED chip 2 and yellow fluorescent substance was shown, for example, by the combination of ultraviolet LED chip and blue, green, and red fluorescent substance Of course, white light may be obtained, and other specific details such as a detailed structure can be appropriately changed.

図１は本発明の一実施形態を示す発光装置の模式断面図である。FIG. 1 is a schematic cross-sectional view of a light-emitting device showing an embodiment of the present invention. 図２は発光装置の製造工程を示す工程説明図である。FIG. 2 is a process explanatory view showing a manufacturing process of the light emitting device. 図３は本発明の実施例の封止樹脂の界面状態を示す画像データである。FIG. 3 is image data showing the interface state of the sealing resin of the embodiment of the present invention. 図４は比較例における封止樹脂と被覆樹脂の剥離状態を示す模式説明図である。FIG. 4 is a schematic explanatory view showing a peeled state of the sealing resin and the coating resin in the comparative example. 図５は第１の比較例の封止樹脂の界面状態を示す画像データである。FIG. 5 is image data showing the interface state of the sealing resin of the first comparative example. 図６は第２の比較例の封止樹脂の界面状態を示す画像データである。FIG. 6 is image data showing the interface state of the sealing resin of the second comparative example. 変形例を示す発光装置の模式断面図である。It is a schematic cross section of the light-emitting device showing a modification.

符号の説明Explanation of symbols

１ 発光装置
２ ＬＥＤチップ
３ 第１リード
３ａ カップ部
４ 第２リード
５ ワイヤ
６ ワイヤ
７ 封止樹脂
８ 被覆樹脂
９ 接着剤
１０１ 発光装置
１０３ 第１リード
１０４ 第２リード
１１０ ケース
１１０ａ 凹部
Ｓ 空隙 DESCRIPTION OF SYMBOLS 1 Light-emitting device 2 LED chip 3 1st lead 3a Cup part 4 2nd lead 5 Wire 6 Wire 7 Sealing resin 8 Coating resin 9 Adhesive 101 Light-emitting device 103 1st lead 104 2nd lead 110 Case 110a Concave S space

Claims (4)

樹脂主剤及び硬化剤を調合して第１調合物を作製する第１調合工程と、
蛍光体及びシランカップリング剤を調合して第２調合物を作製する第２調合工程と、
前記第１調合物及び前記第２調合物を調合して第１樹脂を作製する樹脂作製工程と、
前記第１樹脂によりＬＥＤ素子を封止する封止工程と、
前記ＬＥＤ素子を封止した前記第１樹脂を第２樹脂により被覆する被覆工程と、を含む発光装置の製造方法。 A first blending step of blending a resin main agent and a curing agent to produce a first blend;
A second preparation step of preparing a second preparation by preparing a phosphor and a silane coupling agent;
A resin preparation step of preparing the first resin by preparing the first preparation and the second preparation;
A sealing step of sealing the LED element with the first resin;
And a covering step of covering the first resin sealing the LED element with a second resin. 前記シランカップリング剤は、有機官能基がエポキシ基であり、
前記第２樹脂は、エポキシ樹脂である請求項１に記載の発光装置の製造方法。 In the silane coupling agent, the organic functional group is an epoxy group,
The method for manufacturing a light emitting device according to claim 1, wherein the second resin is an epoxy resin. 前記第１樹脂は、シリコーンである請求項２に記載の発光装置の製造方法。   The method of manufacturing a light emitting device according to claim 2, wherein the first resin is silicone. 前記シランカップリング剤は、加水分解基がアルコキシシリル基である請求項３に記載の発光装置の製造方法。   The method for manufacturing a light emitting device according to claim 3, wherein the silane coupling agent has an alkoxysilyl group as a hydrolyzable group.
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