JP2009169188A - Optical modulator - Google Patents
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本発明は、光変調器に関し、より詳細には、電気光学結晶を用いて電気信号により光の位相を変える光変調器に関する。 The present invention relates to an optical modulator, and more particularly to an optical modulator that changes the phase of light by an electrical signal using an electro-optic crystal.
従来、電気光学結晶を用いた様々な光機能部品が実用化されている。これら光機能部品は、電気光学結晶に電圧を印加すると、電気光学効果により結晶の屈折率が変化することを利用している。例えば、ＫＴａ1-xＮｂxＯ3（０＜ｘ＜１、以下、ＫＴＮという）結晶では、常誘電体から強誘電体への相転移時の温度領域では、比誘電率が発散して１０，０００に達し、誘電率の２乗に比例する２次の電気光学効果が極めて大きくなる。 Conventionally, various optical functional parts using electro-optic crystals have been put into practical use. These optical functional parts utilize the fact that when a voltage is applied to the electro-optic crystal, the refractive index of the crystal changes due to the electro-optic effect. For example, in a KTa 1-x Nb x O 3 (0 <x <1, hereinafter referred to as KTN) crystal, the relative permittivity diverges in the temperature region during the phase transition from paraelectric to ferroelectric. 2nd order electro-optic effect that is proportional to the square of the dielectric constant is extremely large.
電気光学結晶を用いた光位相変調器は、結晶の屈折率の変化により、結晶を通過する光の速度を変化させて、光の位相を変化させる。変調器の構造は、例えば、平行平板型、平行ストリップ型、櫛形電極型、貫通電極型がある。櫛形電極型の電極は、電極の幅が最も狭く、１μｍ程度である。 An optical phase modulator using an electro-optic crystal changes the phase of light by changing the speed of light passing through the crystal by changing the refractive index of the crystal. The structure of the modulator includes, for example, a parallel plate type, a parallel strip type, a comb electrode type, and a through electrode type. The comb-shaped electrode has the smallest electrode width of about 1 μm.
図１に、従来の多層構造の電極構造を示す。半導体またはガラスからなる基板１０１に電極を形成する際、多層構造の電極とするのが一般的である。典型的には、基板１０１に接するＴｉ電極１０２ａ，ｂと、Ｐｔ電極１０３ａ，ｂと、Ａｕ電極１０４ａ，ｂの３層構造の電極を用いる。Ｔｉは、密着性にすぐれているため、接着剤として用いられる。他に密着性の優れた金属として、Ｍｏ、Ａｌ、Ｃｒ等がある。ただし、Ｍｏは耐水性に劣るため信頼性に欠け、Ａｌは耐アルカリ性に劣り、Ｃｒは環境問題を有している。 FIG. 1 shows a conventional multilayer electrode structure. When an electrode is formed on a substrate 101 made of a semiconductor or glass, it is generally a multi-layered electrode. Typically, an electrode having a three-layer structure of Ti electrodes 102a and 102b in contact with the substrate 101, Pt electrodes 103a and 103b, and Au electrodes 104a and 104b is used. Ti is used as an adhesive because it has excellent adhesion. Other metals having excellent adhesion include Mo, Al, Cr, and the like. However, since Mo is inferior in water resistance, it lacks reliability, Al is inferior in alkali resistance, and Cr has an environmental problem.
Ａｕは、電気抵抗率が低いために、電極材料としては最も優れている。他に電気抵抗率の低い金属として、Ａｇ、Ｃｕ等がある。いずれも膜酸化により耐熱変化を起こす点で、Ａｕの方が優れている。Ｐｔは、仕事関数が大きく、Ａｕから電子が半導体に入り込まないようにブロック層として機能する。以上述べたように、Ｔｉ／Ｐｔ／Ａｕ層は、順に接着層／ブロック層／電極本体として機能している。 Au is the most excellent electrode material because of its low electrical resistivity. Other metals with low electrical resistivity include Ag and Cu. In any case, Au is superior in that it causes a heat resistance change by film oxidation. Pt has a large work function and functions as a block layer so that electrons do not enter the semiconductor from Au. As described above, the Ti / Pt / Au layer functions in order as an adhesive layer / block layer / electrode body.
半導体またはガラス基板に接する層にＴｉを使わない場合、電極がはがれることがある。図２に、Ｐｔ／Ｔｉ／Ａｕ層からなる電極を作製したときの基板表面の写真を示す。図２（ａ），（ｃ）は、ガラス基板上にパターン化された電極を形成した場合を示す。図２（ｂ），（ｄ）は、シリコン基板上にパターン化された電極を形成した場合を示す。それぞれの基板上に、様々な大きさ、形状のパターンにより電極を形成した。このうち、図２（ｃ）の符号１１１で示す矢印から右側に形成された電極（白丸囲いの部分）、および図２（ｄ）の符号１１２で示す矢印から右側に形成された電極（黒丸囲いの部分）は、基板からはがれている部分（図を見ると薄く消えかかっているように見える部分）を示している。この部分のパターンは、幅２μｍのパターンであるにもかかわらず、剥離が生じている。従って、基板に接する層にＴｉを使わない場合、幅１μｍの櫛形電極を形成することは、困難である。 When Ti is not used for the layer in contact with the semiconductor or the glass substrate, the electrode may be peeled off. FIG. 2 shows a photograph of the substrate surface when an electrode composed of a Pt / Ti / Au layer is produced. 2A and 2C show the case where a patterned electrode is formed on a glass substrate. FIGS. 2B and 2D show the case where a patterned electrode is formed on a silicon substrate. Electrodes were formed on each substrate with patterns of various sizes and shapes. Among these, an electrode formed on the right side from the arrow indicated by reference numeral 111 in FIG. 2C (a white circled portion), and an electrode formed on the right side from the arrow indicated by reference numeral 112 in FIG. ) Shows a portion peeled off from the substrate (a portion that appears to be fading away when seen in the figure). Although the pattern of this portion is a pattern having a width of 2 μm, peeling occurs. Therefore, when Ti is not used for the layer in contact with the substrate, it is difficult to form a comb electrode having a width of 1 μm.
一方、ＫＴＮ結晶を用いた光変調器において、ＫＴＮ結晶からなる基板に接する層にＴｉを用いると、電子がＫＴＮ結晶に注入され、偏向作用を生ずるという問題があった（例えば、特許文献１参照）。偏向作用は、偏向器として用いる場合には有効であるが、変調器として用いる場合には不要であり、光変調器を透過する光ビームの位置は変動しないことが好ましい。 On the other hand, in an optical modulator using a KTN crystal, when Ti is used for a layer in contact with the substrate made of the KTN crystal, there is a problem that electrons are injected into the KTN crystal and cause a deflection action (see, for example, Patent Document 1). ). The deflection action is effective when used as a deflector, but is not necessary when used as a modulator, and it is preferable that the position of the light beam transmitted through the optical modulator does not vary.
本発明は、このような問題に鑑みてなされたもので、その目的とするところは、信頼性が高く、偏向作用の生じない電極構造を有する光変調器を提供することにある。 The present invention has been made in view of such problems, and an object of the present invention is to provide an optical modulator having an electrode structure that is highly reliable and does not cause a deflection action.
本発明は、このような目的を達成するために、請求項１に記載の発明は、電気光学効果を有する電気光学結晶と、該電気光学結晶を透過する光の光軸に対して垂直に電界を印加するために、互いに平行な前記電気光学結晶の面に対向して形成された電極対とを備え、該電極対は、少なくとも２以上の金属が積層され、前記電気光学結晶に接する金属の仕事関数が前記電気光学結晶の仕事関数より大きいことを特徴とする。 In order to achieve such an object, the present invention provides an electro-optic crystal having an electro-optic effect and an electric field perpendicular to the optical axis of light transmitted through the electro-optic crystal. To the electrode pair formed opposite to the surfaces of the electro-optic crystal parallel to each other, wherein the electrode pair is formed by laminating at least two metals and is made of a metal in contact with the electro-optic crystal. The work function is larger than the work function of the electro-optic crystal.
前記電気光学結晶は、ＫＴａ1-xＮｂxＯ3（０＜ｘ＜１）またはＫ1-yＬｉyＴａ1-xＮｂxＯ3（０＜ｘ＜１、０＜ｙ＜１）が好適であり、このとき、前記電極対の前記電気光学結晶に接する金属は、Ｐｔが好ましい。また、前記電極対は、前記電気光学結晶に接する面から順にＰｔおよびＡｕを積層してもよいし、前記電気光学結晶に接する面から順にＰｔ、ＴｉおよびＡｕを積層してもよい。さらに、前記電極対の前記電気光学結晶に接する金属は、Ｃｏ、Ｇｅ、Ｐｄ、Ｎｉ、Ｉｒ、Ｐｔ、Ｓｅのいずれかとすることができる。 The electro-optic crystal has KTa 1-x Nb x O 3 (0 <x <1) or K 1-y Li y Ta 1-x Nb x O 3 (0 <x <1, 0 <y <1). In this case, the metal in contact with the electro-optic crystal of the electrode pair is preferably Pt. The electrode pair may be laminated with Pt and Au in order from the surface in contact with the electro-optic crystal, or may be laminated with Pt, Ti and Au in order from the surface in contact with the electro-optic crystal. Furthermore, the metal in contact with the electro-optic crystal of the electrode pair can be any one of Co, Ge, Pd, Ni, Ir, Pt, and Se.
以上説明したように、本発明によれば、電極対は、少なくとも２以上の金属が積層され、電気光学結晶に接する金属の仕事関数が電気光学結晶の仕事関数より大きいので、キャリアの注入効率が低くなり、偏向作用が小さくなる。また、電極対と電気光学結晶との密着性がよいので、信頼性の高い変調器を構成することができる。 As described above, according to the present invention, at least two or more metals are stacked and the work function of the metal in contact with the electro-optic crystal is larger than the work function of the electro-optic crystal. The deflection action is reduced. In addition, since the adhesiveness between the electrode pair and the electro-optic crystal is good, a highly reliable modulator can be configured.
以下、図面を参照しながら本発明の実施形態について詳細に説明する。特許文献１によれば、ＫＴＮ結晶からなる基板に接する層にＴｉを用いると、理想的なオーミック接触が実現され、注入効率が最大となる。電極材料の仕事関数が大きくなるにつれて、ショットキー接触に近づき、キャリアの注入効率は減少する。すなわち、伝導電子の注入が抑えられ、偏向作用が小さくなる。ＫＴＮ結晶の仕事関数が５．０ｅＶであることから、電気光学結晶の電気伝導に寄与するキャリアが電子の場合には、基板に接する層の電極材料の仕事関数は、５．０ｅＶ以上であることが好ましい。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. According to Patent Document 1, when Ti is used for a layer in contact with a substrate made of a KTN crystal, ideal ohmic contact is realized, and injection efficiency is maximized. As the work function of the electrode material increases, the Schottky contact is approached and the carrier injection efficiency decreases. That is, conduction electron injection is suppressed, and the deflection action is reduced. Since the work function of the KTN crystal is 5.0 eV, when the carrier contributing to the electric conduction of the electro-optic crystal is an electron, the work function of the electrode material of the layer in contact with the substrate is 5.0 eV or more. Is preferred.
仕事関数が５．０ｅＶ以上の電極材料として、Ｃｏ（５．０）、Ｇｅ（５．０）、Ａｕ（５．１）、Ｐｄ（５．１２）、Ｎｉ（５．１５）、Ｉｒ（５．２７）、Ｐｔ（５．６５）、Ｓｅ（５．９）を用いることができる。ただし、Ａｕは、接着層として用いる場合に加工性が悪いので、これ以外の材料がより好ましい。また、上記材料を複数用いた合金であってもよいし、複数の材料を積層してもよい。 As an electrode material having a work function of 5.0 eV or more, Co (5.0), Ge (5.0), Au (5.1), Pd (5.12), Ni (5.15), Ir (5 .27), Pt (5.65), Se (5.9) can be used. However, since Au has poor processability when used as an adhesive layer, other materials are more preferable. Moreover, an alloy using a plurality of the above materials may be used, or a plurality of materials may be laminated.
また、２次の電気光学定数が大きい電気光学結晶として、Ｋ1-yＬｉyＴａ1-xＮｂxＯ3（０＜ｘ＜１、０＜ｙ＜１、以下、ＫＬＴＮという）を用いることもできる。ＫＬＴＮ結晶の仕事関数も５．０ｅＶであり、上記材料を基板に接する層に用いることにより、伝導電子の注入が抑えられ、偏向作用が小さくなる。 Further, as an electro-optic crystal having a large second-order electro-optic constant, K 1-y Li y Ta 1-x Nb x O 3 (0 <x <1, 0 <y <1, hereinafter referred to as KLTN) is used. You can also. The work function of the KLTN crystal is also 5.0 eV. By using the above material for the layer in contact with the substrate, injection of conduction electrons is suppressed and the deflection action is reduced.
図３に、本発明の一実施形態にかかる光強度変調器を示す。光位相変調器と偏光子および検光子とを組み合わせた光強度変調器である。図３（ａ）に示すように、ＫＴＮ結晶からなる基板１には、対向する面に正極２と負極３とが形成されている。基板１の入射側に偏光子４を配置し、出射側に検光子５を配置する。偏光子４を通過した光の電界成分のうち、ｘ軸に平行な成分をＥｘ、ｙ軸に平行な成分をＥｙとする。偏光子４の偏光角が、基板１のｘ軸に対して４５度の場合には、Ｅｘ＝Ｅｙである。 FIG. 3 shows a light intensity modulator according to an embodiment of the present invention. It is a light intensity modulator combining an optical phase modulator, a polarizer, and an analyzer. As shown in FIG. 3A, a positive electrode 2 and a negative electrode 3 are formed on opposite surfaces of a substrate 1 made of KTN crystal. A polarizer 4 is disposed on the incident side of the substrate 1 and an analyzer 5 is disposed on the exit side. Of the electric field components of the light that has passed through the polarizer 4, let Ex be the component parallel to the x-axis and Ey be the component parallel to the y-axis. When the polarization angle of the polarizer 4 is 45 degrees with respect to the x-axis of the substrate 1, Ex = Ey.
正極２と負極３との間に電圧Ｖを印加したときのＥｘおよびＥｙの位相の変化は、それぞれ式（１），（２）で与えられる。検光子５の偏光角が、基板１のｘ軸に対して４５度の場合、検光子５を通過した出射光の強度は、次式で与えられる。 Changes in the phases of Ex and Ey when a voltage V is applied between the positive electrode 2 and the negative electrode 3 are given by equations (1) and (2), respectively. When the polarization angle of the analyzer 5 is 45 degrees with respect to the x-axis of the substrate 1, the intensity of the outgoing light that has passed through the analyzer 5 is given by the following equation.
ＥｘとＥｙとが等しい場合には、 If Ex and Ey are equal,
として、次式で与えられる。 Is given by the following equation.
このようにして、図３（ｂ）に示したように、電圧Ｖに応じて、検光子５を通過した出射光の強度を０％〜１００％の間で変調することができる。 In this way, as shown in FIG. 3B, the intensity of the emitted light that has passed through the analyzer 5 can be modulated between 0% and 100% according to the voltage V.
図３に示した光強度変調器の電極材料として、Ｐｔ、Ｔｉの２種類を用意する。ＫＴＮ結晶において電気伝導に寄与するキャリアは電子である。図４に、電極材料Ｔｉの光強度変調器の動作特性を示す。印加電圧が増大するのに伴って、出射光の強度は変化するが、オンオフ時の光強度の比（以下、消光比という）が劣化しているのがわかる。これは、電気光学結晶に電圧を印加することにより、電気光学結晶の内部に空間電荷が生じ、電圧の印加方向に電界の傾斜が生じるためにビームが偏向し、垂直偏光と水平偏光との間でずれ角が生じるからである。結晶に印加する電圧の増加に伴って、垂直偏光と水平偏光のずれ角が大きくなり、図４に示したように、消光比が劣化する。 Two types of Pt and Ti are prepared as electrode materials for the light intensity modulator shown in FIG. Carriers contributing to electrical conduction in the KTN crystal are electrons. FIG. 4 shows the operating characteristics of the light intensity modulator of the electrode material Ti. As the applied voltage increases, the intensity of the emitted light changes, but it can be seen that the ratio of the light intensity during on / off (hereinafter referred to as the extinction ratio) is deteriorated. This is because when a voltage is applied to the electro-optic crystal, a space charge is generated inside the electro-optic crystal, and an electric field is tilted in the direction of voltage application, so that the beam is deflected between the vertically polarized light and the horizontally polarized light. This is because a deviation angle occurs. As the voltage applied to the crystal increases, the deviation angle between the vertically polarized light and the horizontally polarized light increases, and the extinction ratio deteriorates as shown in FIG.
図５に、電極材料Ｐｔの光強度変調器の動作特性を示す。Ｐｔは、Ｔｉと比較して電極材料の仕事関数が大きく、ＫＴＮ結晶の仕事関数より大きいので、電極からＫＴＮ結晶へのキャリアの注入効率は減少する。キャリアの注入効率が低くなるほど、電界の傾斜が小さくなるので、偏向作用も小さくなる。正負電極間に５８Ｖの電圧を印加したとき、出射光の偏光方向が入射光の偏光方向に対して、９０度回転する。正極２と負極３との間の印加電圧が増大するのに伴って、出射光がオンオフを繰り返す。 FIG. 5 shows the operating characteristics of the light intensity modulator of the electrode material Pt. Since Pt has a larger work function of the electrode material than Ti and is larger than the work function of the KTN crystal, the efficiency of carrier injection from the electrode to the KTN crystal decreases. The lower the carrier injection efficiency, the smaller the gradient of the electric field, and the smaller the deflection effect. When a voltage of 58 V is applied between the positive and negative electrodes, the polarization direction of the emitted light rotates 90 degrees with respect to the polarization direction of the incident light. As the applied voltage between the positive electrode 2 and the negative electrode 3 increases, the emitted light repeatedly turns on and off.
図６に、実施例１にかかる電極の多層構造を示す。ＫＴＮ結晶からなる基板１１に接するＰｔ電極１２ａ，ｂと、Ａｕ電極１３ａ，ｂの２層構造の電極を用いる。Ｐｔは、仕事関数がＫＴＮ結晶からなる基板よりも大きく、キャリアの注入効率は減少し、偏向作用を生じない。 FIG. 6 shows a multilayer structure of the electrode according to the first example. A two-layer electrode of Pt electrodes 12a and 12b in contact with the substrate 11 made of KTN crystal and Au electrodes 13a and 13b is used. Pt has a work function larger than that of a substrate made of a KTN crystal, the carrier injection efficiency is reduced, and no deflection action occurs.
また、ＫＴＮ結晶は、半導体基板、ガラス基板と比較すると、基板表面に微小な凹凸があり、そこにＰｔが入り込むように固着するために密着性がよく、電極の剥離が生じにくい。具体例は、実施例２を参照して説明する。従って、基板に接する層にＴｉを使う必要がなく、信頼性の高い光変調器を構成することができる。 In addition, the KTN crystal has minute irregularities on the substrate surface compared to the semiconductor substrate and the glass substrate, and is fixed so that Pt enters the substrate, so that the adhesion is good and the electrode is hardly peeled off. A specific example will be described with reference to the second embodiment. Therefore, it is not necessary to use Ti for the layer in contact with the substrate, and a highly reliable optical modulator can be configured.
図７に、実施例２にかかる電極の多層構造を示す。ＫＴＮ結晶からなる基板２１に接するＰｔ電極２２ａ，ｂと、Ｔｉ電極２３ａ，ｂと、Ａｕ電極２４ａ，ｂの３層構造の電極を用いる。Ｐｔは、金属との密着性がわるいために、Ａｕとの密着性を確保するために、Ｔｉを用いた。また、Ｐｔは、ブロック層としても機能するので、ＴｉおよびＡｕからの電子がＫＴＮ結晶に入り込まないようにする。 FIG. 7 shows a multilayer structure of an electrode according to Example 2. A Pt electrode 22a, b in contact with the substrate 21 made of KTN crystal, a Ti electrode 23a, b, and an Au electrode 24a, b are used in a three-layer structure. Since Pt has poor adhesion to metal, Ti was used to ensure adhesion to Au. Further, since Pt also functions as a block layer, electrons from Ti and Au are prevented from entering the KTN crystal.
図８に、実施例２にかかる電極を作製したときの基板表面の写真を示す。Ｐｔ／Ｔｉ／Ａｕ層からなる電極を、ＥＢ蒸着により、１００／７０／２００ｎｍの厚さで形成する。符号「．５５」は、幅０．５５μｍの複数のパターンからなる電極を示し、符号「．６５」は、幅０．６５μｍの複数のパターンからなる電極を示している。一部変形しているものの剥離は生じていない。符号「．７」は、幅０．７０μｍの複数のパターンからなる電極を示し、幅０．７μｍ以上の電極では、剥離も変形もない。剥離を生じているのは、符号「．５」の幅０．５０μｍの電極だけである。従って、幅０．７μｍを超える電極を形成することができるので、櫛形電極も問題なく形成することができる。 FIG. 8 shows a photograph of the substrate surface when the electrode according to Example 2 was produced. An electrode made of a Pt / Ti / Au layer is formed with a thickness of 100/70/200 nm by EB vapor deposition. The symbol “.55” indicates an electrode composed of a plurality of patterns having a width of 0.55 μm, and the symbol “.65” indicates an electrode composed of a plurality of patterns having a width of 0.65 μm. Although it is partially deformed, no peeling occurs. The symbol “0.7” indicates an electrode composed of a plurality of patterns having a width of 0.70 μm, and the electrode having a width of 0.7 μm or more is neither peeled nor deformed. Only the electrode having a width of 0.50 μm and having a reference sign “0.5” causes the peeling. Accordingly, since an electrode having a width exceeding 0.7 μm can be formed, a comb-shaped electrode can be formed without any problem.
１１，２１，１０１ 基板
１２，２２，１０３ Ｐｔ電極
１３，２４，１０４ Ａｕ電極
２３，１０２ Ｔｉ電極
11, 21, 101 Substrate 12, 22, 103 Pt electrode 13, 24, 104 Au electrode 23, 102 Ti electrode
Claims (7)
該電気光学結晶を透過する光の光軸に対して垂直に電界を印加するために、互いに平行な前記電気光学結晶の面に対向して形成された電極対とを備え、
該電極対は、少なくとも２以上の金属が積層され、前記電気光学結晶に接する金属の仕事関数が前記電気光学結晶の仕事関数より大きいことを特徴とする光変調器。 An electro-optic crystal having an electro-optic effect;
An electrode pair formed to face the surfaces of the electro-optic crystal parallel to each other in order to apply an electric field perpendicular to the optical axis of the light transmitted through the electro-optic crystal;
The electrode pair is formed by stacking at least two metals, and a work function of a metal in contact with the electro-optic crystal is larger than a work function of the electro-optic crystal.
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| CN111448508A (en) * | 2017-12-05 | 2020-07-24 | 浜松光子学株式会社 | Reflection type spatial light modulator, optical observation device, and light irradiation device |
| CN111596339A (en) * | 2020-05-29 | 2020-08-28 | 东华理工大学 | Semiconductor nuclear radiation detector and preparation method and application thereof |
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| CN111448508A (en) * | 2017-12-05 | 2020-07-24 | 浜松光子学株式会社 | Reflection type spatial light modulator, optical observation device, and light irradiation device |
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