JP2009167098A - Glass substrate - Google Patents

Glass substrate Download PDF

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JP2009167098A
JP2009167098A JP2009080907A JP2009080907A JP2009167098A JP 2009167098 A JP2009167098 A JP 2009167098A JP 2009080907 A JP2009080907 A JP 2009080907A JP 2009080907 A JP2009080907 A JP 2009080907A JP 2009167098 A JP2009167098 A JP 2009167098A
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glass substrate
glass
substrate
liquid crystal
roughness
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Shinkichi Miwa
晋吉 三和
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Nippon Electric Glass Co Ltd
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Nippon Electric Glass Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a glass substrate hardly causing electrification during the manufacture process of a liquid crystal display. <P>SOLUTION: In the glass substrate having a first surface on which an electrode wire or various devices are formed and a second surface on which these are not formed, the second surface is physically polished and the surface roughness Ra of the second surface is ≥0.3 and ≤10 nm and it is preferable that the surface roughness Ra of the first surface is ≤0.2 nm. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は接触剥離しても静電気の帯電を引き起こしにくいガラス基板、特にディスプレイ用ガラス基板に関する。   The present invention relates to a glass substrate, and more particularly to a glass substrate for a display, which is less likely to cause electrostatic charging even when contact peeling is performed.

ガラス基板は液晶ディスプレイ等のフラットパネルディスプレイの基板として広く使用されている。特にフラットパネルディスプレイ、中でも液晶ディスプレイにおいてはアルカリ酸化物を含有しない無アルカリガラス基板が用いられる。   Glass substrates are widely used as substrates for flat panel displays such as liquid crystal displays. In particular, non-alkali glass substrates containing no alkali oxide are used in flat panel displays, particularly liquid crystal displays.

上記したような用途では、以下の特性がガラス基板に求められる。(1)フォトリソ−エッチング工程で使用される種々の酸、アルカリ等の薬液に対する耐薬品性に優れていること。(2)成膜、アニール等の工程で、ガラス基板は数100℃に加熱される。その際にガラスが熱収縮しない為に歪点が高いこと。現在の多結晶シリコンTFT−LCDでは、その工程温度は約400〜600℃であり、これらの用途に用いる基板用ガラスの歪点は600℃以上の値が望ましい。   In the applications as described above, the following characteristics are required for the glass substrate. (1) Excellent chemical resistance to chemicals such as various acids and alkalis used in the photolithographic etching process. (2) The glass substrate is heated to several hundred degrees Celsius in processes such as film formation and annealing. In that case, the strain point is high because the glass does not heat shrink. In the present polycrystalline silicon TFT-LCD, the process temperature is about 400-600 degreeC, and the strain point of the glass for substrates used for these uses has a desirable value of 600 degreeC or more.

又これらを溶融し、薄い板状に成形してガラス基板を製造するためには以下の特性が要求される。(3)ガラス中に泡、ぶつ、脈理等の透明基板ガラスとして好ましくない溶融欠陥を発生しにくいように、溶融性に優れていること。(4)ガラス基板中に溶融、あるいは成形中に発生する異物を避けるため耐失透性に優れていること。   Moreover, the following characteristics are required in order to melt these and shape | mold into a thin plate shape and to manufacture a glass substrate. (3) The glass has excellent meltability so that it does not easily cause melting defects that are not desirable as transparent substrate glass such as bubbles, bumps and striae in the glass. (4) Excellent devitrification resistance in order to avoid foreign matters generated during melting or molding in the glass substrate.

特開2001−343632号公報JP 2001-343632 A 特開2002−72922号公報Japanese Patent Laid-Open No. 2002-72922

ところで無アルカリガラス基板においては、ガラス基板の静電気の帯電が問題になることが多い。もともと絶縁体であるガラスは非常に帯電しやすいが、アルカリ酸化物成分をほとんど含有しない無アルカリガラスはその中でも特に帯電しやすく、かつ一旦帯電した静電気が逃げずに維持される傾向がある。液晶ディスプレイなどフラットパネルディスプレイの製造工程において、ガラス基板の帯電は様々な工程で引き起こされるが、製膜工程などにおける金属や絶縁体のプレートとの接触剥離で起こるいわゆる剥離帯電が大きな問題となっている。プレートとガラス基板の接触、剥離による帯電は常圧の大気中の工程はもちろんのこと、基板表面の薄膜のエッチングをおこなう工程や製膜工程など、真空の工程中でも発生し問題となる。このような工程中で帯電したガラス基板に導電性の物質が近づくと放電が起こる。帯電している静電気の電圧は数10kVにも達するため、放電によってガラス基板表面の素子や電極線、或いは場合によってはガラスそのものの破壊(絶縁破壊あるいは静電破壊)が起こり表示不良の原因となる。液晶ディスプレイの中でもTFT−LCDに代表されるアクティブマトリクスタイプの液晶ディスプレイは、ガラス基板表面に薄膜トランジスタなどの微細な半導体素子や電子回路が形成されるが、この素子や回路は静電破壊に非常に弱いため特に問題となる。また帯電した基板は環境中に存在するダストを引き寄せ基板表面の汚染の原因ともなる。   By the way, in an alkali-free glass substrate, electrostatic charging of the glass substrate often becomes a problem. Glass that is originally an insulator is very easily charged, but alkali-free glass containing almost no alkali oxide component is particularly easy to be charged, and there is a tendency that static electricity once charged is not lost. In the manufacturing process of flat panel displays such as liquid crystal displays, charging of the glass substrate is caused by various processes, but so-called peeling charging that occurs due to contact peeling with a metal or insulator plate in a film forming process or the like becomes a big problem. Yes. Charging due to contact and peeling between the plate and the glass substrate occurs in a vacuum process such as a process for etching a thin film on the substrate surface or a film forming process, as well as a process in an atmospheric pressure. When a conductive substance approaches the charged glass substrate in such a process, discharge occurs. Since the charged electrostatic voltage reaches several tens of kV, the discharge causes the destruction of the elements and electrode wires on the surface of the glass substrate, or in some cases the glass itself (insulation breakdown or electrostatic breakdown), which causes display defects. . Among liquid crystal displays, active matrix type liquid crystal displays represented by TFT-LCDs have fine semiconductor elements such as thin film transistors and electronic circuits formed on the surface of glass substrates. These elements and circuits are extremely susceptible to electrostatic breakdown. It is particularly problematic because it is weak. In addition, the charged substrate attracts dust present in the environment and causes contamination of the substrate surface.

ガラス基板の帯電防止策としてはイオナイザを用いて電荷を中和する、あるいは環境中の湿度を上げ、たまった電荷を空中に放電させる方法などがよく用いられている。しかしこれらの対策はコストアップの要因になる他、工程中に帯電を引き起こす場所が多岐にわたるため、効果的な対策を打つことが難しいという問題が残る。さらにプラズマプロセスのような真空プロセス中ではこれらの手段を用いることができない。従って液晶ディスプレイを初めとするフラットパネルディスプレイ用途には、帯電しにくいガラス基板が強く求められている(特許文献1、2参照)。   As an antistatic measure for the glass substrate, a method of neutralizing the charge using an ionizer or increasing the humidity in the environment to discharge the accumulated charge into the air is often used. However, these countermeasures increase the cost, and there are various places where charging is caused during the process, so that it is difficult to take effective countermeasures. Furthermore, these means cannot be used in a vacuum process such as a plasma process. Therefore, for flat panel display applications such as liquid crystal displays, there is a strong demand for glass substrates that are not easily charged (see Patent Documents 1 and 2).

本発明の目的は、プロセス中での帯電を引き起こしにくいガラス基板を提供することである。   An object of the present invention is to provide a glass substrate that is less likely to cause charging during the process.

本発明のガラス基板は、電極線や各種デバイスが形成される第一の表面と、これらが形成されない第二の表面とを有するガラス基板において、第二の表面が物理的研磨されており、且つ第二の表面の表面粗さRaが0.3nm以上10nm以下であることを特徴とする。   The glass substrate of the present invention is a glass substrate having a first surface on which electrode wires and various devices are formed and a second surface on which these are not formed, and the second surface is physically polished, and The surface roughness Ra of the second surface is 0.3 nm or more and 10 nm or less.

また第一の表面の表面粗さRaは、0.2nm以下であることが好ましい。   Further, the surface roughness Ra of the first surface is preferably 0.2 nm or less.

また第一の表面は、火造り面であることが好ましい。   The first surface is preferably a fire-making surface.

また本発明のガラス基板は、オーバーフローダウンドロー法で成形されてなることが好ましい。   The glass substrate of the present invention is preferably formed by an overflow down draw method.

また本発明のガラス基板は、アルカリ酸化物の含有量が合計0.1質量%以下であることが好ましい。   The glass substrate of the present invention preferably has a total content of alkali oxides of 0.1% by mass or less.

また本発明のガラス基板は、フラットディスプレイ用ガラス基板、特に液晶ディスプレイ用ガラス基板として使用されることが好ましい。   Moreover, it is preferable that the glass substrate of this invention is used as a glass substrate for flat displays, especially a glass substrate for liquid crystal displays.

本発明のガラス基板は、剥離帯電量が低く、液晶ディスプレイ等の製造工程で生じる静電気の帯電を抑制できる。このため基板上の素子、配線の破壊を防ぐことができるので、これら電子機器を歩留まり良く製造できる。従って、本発明のガラス基板は液晶ディスプレイ、ELディスプレイ等のフラットパネルディスプレイ用の基板として好適である。   The glass substrate of the present invention has a low peel charge amount and can suppress static electricity generated in the manufacturing process of a liquid crystal display or the like. For this reason, destruction of elements and wirings on the substrate can be prevented, so that these electronic devices can be manufactured with high yield. Therefore, the glass substrate of the present invention is suitable as a substrate for flat panel displays such as liquid crystal displays and EL displays.

剥離耐電量の測定に用いる装置を示す説明図であり、(a)はガラス基板を載置した状態を示す説明図、(b)はガラス基板とテーブルを密着させた状態を示す説明図である。It is explanatory drawing which shows the apparatus used for measurement of peeling electric strength, (a) is explanatory drawing which shows the state which mounted the glass substrate, (b) is explanatory drawing which shows the state which stuck the glass substrate and the table. .

ガラス基板の帯電、特に剥離帯電を減少させる方法としては微視的に見てガラス基板と相手のステージとの接触面積を減少させることが最も効果的である。ガラス基板とステージが強い力で接触した際、両者の界面で電子のやり取りが起こる。これが引き剥がされるときに帯電として現れる。そこでガラス基板のステージと接触する面(本発明では第二の表面に相当する)の表面粗さを適正範囲に調整してやることにより、接触面積を減少することができ、その結果帯電量を低減できる。   As a method of reducing the charging of the glass substrate, particularly the peeling charging, it is most effective to reduce the contact area between the glass substrate and the other stage as viewed microscopically. When the glass substrate and the stage come into contact with each other with a strong force, electrons are exchanged at the interface between the two. This appears as a charge when peeled off. Therefore, by adjusting the surface roughness of the surface of the glass substrate that contacts the stage (corresponding to the second surface in the present invention) to an appropriate range, the contact area can be reduced, and as a result, the charge amount can be reduced. .

ガラス基板の剥離帯電防止に有効なガラス表面の粗さはRaで0.3nm以上である。ガラス表面の粗さが大きければ大きいほど帯電量は小さくなる傾向があるが、大きすぎると別の問題が発生する。ガラス基板表面の粗さが大きいということはガラス表面に大きな欠陥があるということでありガラス基板の強度低下を招く恐れがあり望ましくない。   The roughness of the glass surface effective for preventing peeling-off of the glass substrate is Ra of 0.3 nm or more. The larger the roughness of the glass surface, the smaller the charge amount, but if it is too large, another problem occurs. A large roughness on the surface of the glass substrate means that there is a large defect on the glass surface, which may cause a decrease in strength of the glass substrate, which is not desirable.

一方、各種ステージと接触しない側の面(本発明においては第一の表面に相当する)については非常な高精度の表面が望まれる。この面は一般的には基板の優先保証面、または「おもて面」と呼ばれる。基板の優先保証面には例えば薄膜トランジスタタイプの液晶ディスプレイ(TFT−LCD)では各種の配線膜や画素を駆動するデバイスが薄膜で形成される。もし優先保証面にキズや汚れがあったり表面粗さが大きかったりすると配線膜の断線の原因となったりTFTの形成不良などが発生し、表示不良の原因となる。特に近年、TV用の広視野角技術として着目されているIPS方式の液晶ディスプレイやあるいは超高精細の液晶ディスプレイはガラス表面のキズや汚れに非常に厳しい。従って優先保証面については表面粗さRaが0.2nm以下であることが求められる。更にこの優先保証面が例えば既知のダウンドロー成形で成形した火造り(アズフォーム)面であれば最も望ましい。既知のダウンドロー成形のうち最も適切な方法は現在ではオーバーフローダウンドロー法である。その他の板ガラス成形方法、例えばフロート法でもアズフォーム面をつくることは可能であるが、現状では板ガラス表面のスズによる汚染や微小な表面のうねりと呼ばれる凹凸がTFT−LCDの表示性能を低下させるため、優先保証面を研磨しなければ製品とはならない。   On the other hand, a very high precision surface is desired for the surface that does not come into contact with various stages (corresponding to the first surface in the present invention). This surface is generally referred to as the priority guarantee surface or “front surface” of the substrate. For example, in a thin film transistor type liquid crystal display (TFT-LCD), various wiring films and devices for driving pixels are formed as thin films on the priority guarantee surface of the substrate. If the priority guarantee surface is scratched or dirty, or if the surface roughness is large, it may cause disconnection of the wiring film, defective TFT formation, etc., leading to display defects. In particular, in recent years, an IPS liquid crystal display or an ultra-high-definition liquid crystal display, which has been attracting attention as a wide viewing angle technology for TV, is extremely severe with respect to scratches and dirt on the glass surface. Accordingly, the surface roughness Ra is required to be 0.2 nm or less for the priority guarantee surface. Further, it is most desirable if this priority guarantee surface is a fired (as-foam) surface formed by, for example, a known downdraw molding. The most appropriate method of known downdraw molding is now the overflow downdraw method. It is possible to create an as-foam surface by other plate glass forming methods such as the float method, but at present, unevenness called tin contamination on the surface of the plate glass or microscopic surface undulations deteriorates the display performance of the TFT-LCD. If the priority guarantee surface is not polished, it will not become a product.

さて本発明のガラス基板は、本発明の目的を達成するために、第二の表面が物理的研磨されている。この場合上記したようにガラスの非優先保証面のみを研磨によって粗化することが容易である。一般にガラスの研磨は酸化セリウムなどの研磨剤を用いておこなわれる。研磨剤の溶媒としては水の他、酸、アルカリなども添加されることがある。研磨剤を保持する担体としてはポリウレタンや人工皮革などの各種樹脂や化学繊維が用いられる。この方法は低コストでかつ効果的に表面を荒らすことができる。   In the glass substrate of the present invention, the second surface is physically polished in order to achieve the object of the present invention. In this case, as described above, it is easy to roughen only the non-priority guaranteed surface of the glass by polishing. Generally, polishing of glass is performed using an abrasive such as cerium oxide. As a solvent for the abrasive, acid, alkali, etc. may be added in addition to water. As the carrier for holding the abrasive, various resins such as polyurethane and artificial leather and chemical fibers are used. This method can effectively roughen the surface at low cost.

また上記した物理的研磨以外にも、例えば第二の面のみを化学処理、或いはプラズマ処理することで、所定の表面粗さにする方法も考えられる。   In addition to the above-described physical polishing, for example, a method in which only the second surface is subjected to chemical treatment or plasma treatment to obtain a predetermined surface roughness can be considered.

[試料の調製]
次表に本発明のガラス基板の実施例を示す。表中のNo.2は本発明の実施例であり、No.1は比較例である。
[Sample preparation]
The following table shows examples of the glass substrate of the present invention. No. in the table. 2 is an example of the present invention. 1 is a comparative example.

試料No.1には、市場に流通している液晶ディスプレイ用無アルカリガラス基板OA−10(日本電気硝子株式会社製 アルカリ酸化物含有量0.1質量%以下)を使用した。基板サイズは370〜470mm、基板の肉厚は0.7mmである。このガラス基板はオーバーフローダウンドロー法で成形されており、かつその基板表面は両面とも火造り面であり、表面粗さはRaで0.1nmであった。   Sample No. 1 used was a non-alkali glass substrate OA-10 for liquid crystal displays (manufactured by Nippon Electric Glass Co., Ltd., an alkali oxide content of 0.1% by mass or less) that is distributed in the market. The substrate size is 370 to 470 mm, and the thickness of the substrate is 0.7 mm. This glass substrate was formed by the overflow downdraw method, and both surfaces of the substrate were fired surfaces, and the surface roughness Ra was 0.1 nm.

No.2は研磨により表面を処理した。オスカー型の研磨装置を用い、研磨剤として酸化セリウムおよび純水を、研磨布としてポリウレタンを用いた。30分表面を研磨した後、洗浄、乾燥して評価に用いた。   No. 2 treated the surface by polishing. An Oscar-type polishing apparatus was used, cerium oxide and pure water were used as the polishing agent, and polyurethane was used as the polishing cloth. After polishing the surface for 30 minutes, it was washed and dried and used for evaluation.

[表面粗さの測定]
ガラス基板の表面粗さは、触針式の表面粗さ計(Taylor−Hobson社製タリステップ)を用いてカットオフ9μmで測定した。なお測定値は、基板内の数箇所の表面粗さを測定しその平均値で示した。
[Measurement of surface roughness]
The surface roughness of the glass substrate was measured at a cutoff of 9 μm using a stylus type surface roughness meter (Talystep manufactured by Taylor-Hobson). In addition, the measured value measured the surface roughness of several places in a board | substrate, and showed it with the average value.

[剥離帯電評価]
本実施例における剥離帯電評価には、図1に示すような装置を用いた。この装置は以下の構成を有している。
[Peeling charge evaluation]
An apparatus as shown in FIG. 1 was used for peeling charge evaluation in this example. This apparatus has the following configuration.

ガラス基板Gの支持台1は、ガラス基板4隅を支持するテフロン(登録商標)製のパッド2を備えている。また支持台1には、昇降自在な金属アルミニウム製のテーブル3が設けられており、テーブル3を上下させることによって、ガラス基板Gとテーブル3を接触、剥離させ、ガラス基板Gを帯電させることができる。なおテーブル3はアースされている。またテーブル3には孔(図示せず)が形成されており、この孔がダイアフラム型の真空ポンプ(図示せず)に接続されている。真空ポンプを駆動させると、テーブル3の孔から空気が吸引され、これによってガラス基板Gをテーブル3に真空吸着させることができる。またガラス基板Gの上方10mmの位置には表面電位計4が設置され、これによってガラス基板G中央部に発生する帯電量を連続測定する。またガラス基板Gの上方にはイオナイザ付きエアーガン5が設置されており、これによってガラス基板Gの帯電を徐電できる。   The support 1 for the glass substrate G includes a pad 2 made of Teflon (registered trademark) that supports the corners of the glass substrate 4. Further, the support table 1 is provided with a table 3 made of metal aluminum that can be raised and lowered. By moving the table 3 up and down, the glass substrate G and the table 3 can be brought into contact with each other and peeled to charge the glass substrate G. it can. The table 3 is grounded. A hole (not shown) is formed in the table 3, and this hole is connected to a diaphragm type vacuum pump (not shown). When the vacuum pump is driven, air is sucked from the hole of the table 3, and thereby the glass substrate G can be vacuum-adsorbed to the table 3. Further, a surface potential meter 4 is installed at a position 10 mm above the glass substrate G, thereby continuously measuring the amount of charge generated at the center of the glass substrate G. Further, an air gun 5 with an ionizer is installed above the glass substrate G, whereby charging of the glass substrate G can be gradually reduced.

この装置を用いて剥離耐電量を測定する方法を説明する。なお実験は25℃、湿度40%の環境で行う。この帯電量は雰囲気、特に大気中の湿度に影響を受けて大きく変化するので特に湿度には気を配る必要がある。   A method of measuring the peeling withstand voltage using this apparatus will be described. The experiment is performed in an environment of 25 ° C. and a humidity of 40%. Since this amount of charge changes greatly depending on the atmosphere, particularly the humidity in the atmosphere, it is necessary to pay particular attention to the humidity.

(1) ガラス基板Gを、物理研磨面を下側にして支持台1に載置する。
(2) 次にイオナイザ付きエアーガン5により、ガラス基板Gを徐電する。
(3) テーブル3を上昇させてガラス基板Gに接触させるとともに真空吸着させて、テーブル3とガラス基板Gを20秒間密着させる。
(4) テーブル3を下降させることでガラス基板Gを剥離し、ガラス基板G中央部に発生する帯電量を表面電位計4で連続的に測定する。
(5) (3)(4)を繰り返すことにより、計5回の剥離評価を連続して行う。
各測定における最大帯電量を求め、これらを積算して剥離帯電量とする。
(1) Place the glass substrate G on the support base 1 with the physical polishing surface facing down.
(2) Next, the glass substrate G is gradually charged by the air gun 5 with an ionizer.
(3) The table 3 is raised and brought into contact with the glass substrate G and vacuum-adsorbed to bring the table 3 and the glass substrate G into close contact for 20 seconds.
(4) The glass substrate G is peeled by lowering the table 3, and the charge amount generated at the center of the glass substrate G is continuously measured by the surface potentiometer 4.
(5) By repeating (3) and (4), a total of five peeling evaluations are continuously performed.
The maximum charge amount in each measurement is obtained, and these are integrated to obtain the peel charge amount.

[評価結果]
本発明の実施例は、剥離帯電量が比較的低い値を示した。それに比べNo.1の試料では、基板の帯電量が高い結果を示した。
[Evaluation results]
In the examples of the present invention, the peel charge amount was relatively low. In comparison, no. Sample No. 1 showed a high charge amount of the substrate.

G ガラス基板
1 支持台
2 パッド
3 テーブル
4 表面電位計
5 イオナイザ付きエアーガン
G Glass substrate 1 Support base 2 Pad 3 Table 4 Surface potential meter 5 Air gun with ionizer

Claims (7)

電極線や各種デバイスが形成される第一の表面と、これらが形成されない第二の表面とを有するガラス基板において、
第二の表面が物理的研磨されており、且つ第二の表面の表面粗さRaが0.3nm以上10nm以下であることを特徴とするガラス基板。
In a glass substrate having a first surface on which electrode wires and various devices are formed, and a second surface on which these are not formed,
A glass substrate, wherein the second surface is physically polished, and the surface roughness Ra of the second surface is from 0.3 nm to 10 nm.
第一の表面の表面粗さRaが0.2nm以下であることを特徴とする請求項1に記載のガラス基板。   The glass substrate according to claim 1, wherein the surface roughness Ra of the first surface is 0.2 nm or less. 第一の表面が火造り面であることを特徴とする請求項1または2のいずれかに記載のガラス基板。   The glass substrate according to claim 1, wherein the first surface is a fire-making surface. オーバーフローダウンドロー法で成形されてなることを特徴とする請求項1〜3のいずれかに記載のガラス基板。   The glass substrate according to any one of claims 1 to 3, which is formed by an overflow downdraw method. アルカリ酸化物の含有量が合計0.1質量%以下であることを特徴とする請求項1〜4のいずれかに記載のガラス基板。   The glass substrate according to any one of claims 1 to 4, wherein the total content of alkali oxides is 0.1% by mass or less. フラットディスプレイ用ガラス基板に使用されることを特徴とする請求項1〜5のいずれかに記載のガラス基板。   It uses for the glass substrate for flat displays, The glass substrate in any one of Claims 1-5 characterized by the above-mentioned. 液晶ディスプレイ用ガラス基板として使用されることを特徴とする請求項1〜5のいずれかに記載のガラス基板。   It is used as a glass substrate for liquid crystal displays, The glass substrate in any one of Claims 1-5 characterized by the above-mentioned.
JP2009080907A 2009-03-30 2009-03-30 Glass substrate Pending JP2009167098A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011238444A (en) * 2010-05-10 2011-11-24 Furukawa Electric Co Ltd:The Glass substrate and organic electroluminescent element

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JP2001085371A (en) * 1999-07-30 2001-03-30 Corning Inc Glazing abrasive for colloidal sillica
JP2001343632A (en) * 2000-06-02 2001-12-14 Sharp Corp Method for manufacturing liquid crystal display device
WO2002098812A1 (en) * 2001-06-04 2002-12-12 Nippon Sheet Glass Co., Ltd. Method of producing transparent substrate and trasparent substrate, and organic electroluminescence element having the transparent substrate
JP2002362943A (en) * 2001-06-08 2002-12-18 Asahi Techno Glass Corp Substrate for optical device, optical device and method for manufacturing optical device
JP2004012544A (en) * 2002-06-03 2004-01-15 Sharp Corp Active matrix substrate and method for manufacturing the same, and display device using the active matrix substrate
WO2004020356A1 (en) * 2002-08-29 2004-03-11 Corning Incorporated Low-density glass for flat panel display substrates

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Publication number Priority date Publication date Assignee Title
JP2001085371A (en) * 1999-07-30 2001-03-30 Corning Inc Glazing abrasive for colloidal sillica
JP2001343632A (en) * 2000-06-02 2001-12-14 Sharp Corp Method for manufacturing liquid crystal display device
WO2002098812A1 (en) * 2001-06-04 2002-12-12 Nippon Sheet Glass Co., Ltd. Method of producing transparent substrate and trasparent substrate, and organic electroluminescence element having the transparent substrate
JP2002362943A (en) * 2001-06-08 2002-12-18 Asahi Techno Glass Corp Substrate for optical device, optical device and method for manufacturing optical device
JP2004012544A (en) * 2002-06-03 2004-01-15 Sharp Corp Active matrix substrate and method for manufacturing the same, and display device using the active matrix substrate
WO2004020356A1 (en) * 2002-08-29 2004-03-11 Corning Incorporated Low-density glass for flat panel display substrates

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011238444A (en) * 2010-05-10 2011-11-24 Furukawa Electric Co Ltd:The Glass substrate and organic electroluminescent element

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