JP2009158674A - Bar for lead frame, the lead frame, and manufacturing method of bar for the lead frame - Google Patents

Bar for lead frame, the lead frame, and manufacturing method of bar for the lead frame Download PDF

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JP2009158674A
JP2009158674A JP2007334063A JP2007334063A JP2009158674A JP 2009158674 A JP2009158674 A JP 2009158674A JP 2007334063 A JP2007334063 A JP 2007334063A JP 2007334063 A JP2007334063 A JP 2007334063A JP 2009158674 A JP2009158674 A JP 2009158674A
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lead frame
bar
strip
die pad
semiconductor package
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Koichi Takeda
耕一 武田
Tatsuya Tonoki
達也 外木
Soshi Seki
聡至 関
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Hitachi Cable Ltd
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Hitachi Cable Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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  • Lead Frames For Integrated Circuits (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a lead frame which contributes to improvement in heat dissipating performance, while complying with the demands for higher performance and size reduction and thinner structure of a semiconductor package, and to provide a bar for the lead frame. <P>SOLUTION: The lead frame 3 has a lead 32 as an electronic terminal and a die pad 31 mounted with a semiconductor chip, is formed of a bar, having an irregular-shaped cross section having a thin portion and a thick portion, and has a flow passage for fluid formed in the inside of the die pad composed of the thick portion. The manufacturing method of the bar for the lead frame includes the stages of forming the bar having the irregular-shaped cross section, having at least two kinds of thicknesses in a width direction of the bar; forming a groove on one surface of the thick portion of the bar; and forming the flow passage for fluid in the inside of the thick portion by covering the groove. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、半導体パッケージ等の半導体装置のリードフレーム、および該リードフレームに用いる条材に関するものである。   The present invention relates to a lead frame of a semiconductor device such as a semiconductor package, and a strip used for the lead frame.

近年における電子機器の普及・進展により、搭載される半導体パッケージには高性能化・小型化・薄型化の要求がますます高まっている。半導体パッケージの高性能化により、半導体パッケージの発熱量は増加傾向にある。さらに半導体パッケージの小型化はエネルギー密度の上昇を意味し、局所的な発熱量の増大から、より積極的な発熱対策が必要になってきている。加えて、最近では半導体パッケージを用いた電子機器が自動車用途にも多く使用されており、エンジンルーム内などの高温環境下においても十分な放熱性を確保することが求められている。   Due to the spread and progress of electronic devices in recent years, there is an increasing demand for higher performance, smaller size and thinner semiconductor packages. Due to the high performance of semiconductor packages, the amount of heat generated by the semiconductor packages tends to increase. Furthermore, the miniaturization of the semiconductor package means an increase in energy density, and a more aggressive countermeasure against heat generation has become necessary due to a local increase in heat generation. In addition, recently, electronic devices using semiconductor packages are often used for automobiles, and it is required to ensure sufficient heat dissipation even in a high temperature environment such as in an engine room.

図２は、従来の半導体パッケージの概略を示す断面模式図である。一般的に半導体パッケージ１では、半導体チップ２がリードフレーム３のダイパット31に搭載され、リードフレーム３のリード32と半導体チップ２とがボンディングワイヤ４で結線され、それら（半導体チップ２、ダイパット31、ボンディングワイヤ４、リ―ド32の一部）がモールド樹脂５で樹脂封止された構造になっている。半導体チップ２で発生した熱は、ボンディングワイヤ４を介してリード32に伝わり外部へ放熱される。また、しばしばモールド樹脂５の外面に放熱フィン６が設置され、モールド樹脂を介した伝熱が該フィンからも放熱される。   FIG. 2 is a schematic cross-sectional view showing an outline of a conventional semiconductor package. In general, in the semiconductor package 1, the semiconductor chip 2 is mounted on the die pad 31 of the lead frame 3, and the leads 32 of the lead frame 3 and the semiconductor chip 2 are connected by bonding wires 4, and these (semiconductor chip 2, die pad 31, The bonding wire 4 and a part of the lead 32 are sealed with a mold resin 5. The heat generated in the semiconductor chip 2 is transferred to the leads 32 through the bonding wires 4 and radiated to the outside. Moreover, the radiation fin 6 is often installed on the outer surface of the mold resin 5, and heat transfer via the mold resin is also radiated from the fin.

しかしながら、高性能化・高集積化した半導体パッケージにおいては、従来の構造での放熱性が不十分な場合がある。そこで、その放熱対策として半導体パッケージの樹脂封止部に冷却管や中空の導管を設け、半導体パッケージ全体の放熱性を向上させた半導体装置が開示されている（例えば、特許文献１〜２）。   However, in a semiconductor package with high performance and high integration, the heat dissipation in the conventional structure may be insufficient. Therefore, as a heat dissipation measure, a semiconductor device is disclosed in which a cooling pipe or a hollow conduit is provided in the resin sealing portion of the semiconductor package to improve the heat dissipation of the entire semiconductor package (for example, Patent Documents 1 and 2).

特開平５−２９４９４号公報JP-A-5-29494 特開平６−１９６５９６号公報JP-A-6-196596

一方、半導体パッケージにおいて半導体チップと組み合わされるリードフレーム材料には、機械的強度、電気伝導度、熱伝導度、耐食性などに優れた特性を有することが要求される。なかでも上述した半導体パッケージへの要求に対応すべく、近年では特に、低消費電力化（電気伝導度）や放熱対策（熱伝導度）の観点から銅系素材の条材（銅または銅合金の条材を総括して銅条と称す）が広く使用されている。また、リードフレーム用条材として、半導体チップが搭載されるダイパット部分を厚肉化することでヒートシンクの機能を付与することができる異型断面条材がしばしば使用される。   On the other hand, a lead frame material combined with a semiconductor chip in a semiconductor package is required to have excellent properties such as mechanical strength, electrical conductivity, thermal conductivity, and corrosion resistance. In particular, in order to meet the demands for the above-described semiconductor packages, in particular, from the viewpoint of low power consumption (electrical conductivity) and heat dissipation measures (thermal conductivity), strips of copper-based materials (copper or copper alloy The strips are collectively referred to as copper strips). Further, as the lead frame strip material, an irregular cross-section strip material that can impart a heat sink function by thickening a die pad portion on which a semiconductor chip is mounted is often used.

図３は、従来の異型断面条材の例を示す横断面模式図である。リードフレーム用条材３’は、リードフレーム形状に成形された際にダイパット31となるダイパット部31’とリード32となるリード部32’とが一体に形成され、かつ幅方向に少なくとも２種類の板厚（例えば、薄肉部と厚肉部）を有している。また、リードフレーム３の製造工程は、一般的に、ダイパット部31’とリード部32’が一体成形された条材を製造する「条材形成工程」、プレス機等により条材をデザインされた形状（ダイパット31やリード32）に打ち抜く「プレス工程」、リードフレームの必要な箇所にめっきを施す「めっき工程」などから構成される。   FIG. 3 is a schematic cross-sectional view showing an example of a conventional irregular cross-section strip. In the lead frame strip 3 ', a die pad portion 31' that becomes a die pad 31 and a lead portion 32 'that becomes a lead 32 when formed into a lead frame shape are integrally formed, and at least two kinds in the width direction are formed. It has plate thickness (for example, a thin part and a thick part). In addition, the manufacturing process of the lead frame 3 is generally designed by a “strip material forming process” for manufacturing a strip material in which the die pad portion 31 ′ and the lead portion 32 ′ are integrally formed, and a press machine or the like. It consists of a “pressing process” that punches out the shape (die pad 31 and leads 32), and a “plating process” that performs plating on the necessary portions of the lead frame.

上述したように、近年の半導体パッケージにおいて放熱対策は極めて重要な課題である。しかしながら、特許文献１，２に記載されたような半導体パッケージでは、放熱用の冷却管や中空の導管が樹脂封止部に設置されることから樹脂封止部が必然的に厚くなり易く、半導体パッケージの薄型化要求への対応に適さない問題がある。   As described above, heat radiation countermeasures are extremely important issues in recent semiconductor packages. However, in the semiconductor package as described in Patent Documents 1 and 2, since the heat-dissipating cooling pipe and the hollow conduit are installed in the resin sealing portion, the resin sealing portion tends to be inevitably thick. There is a problem that is not suitable for meeting the demand for thinner packages.

従って、本発明の目的は、半導体パッケージに対する高性能化・小型化・薄型化の要求に対応しつつ、放熱性能の向上に寄与するリードフレームおよびリードフレーム用条材を提供することにある。   Accordingly, an object of the present invention is to provide a lead frame and a lead frame strip that contribute to the improvement of heat dissipation performance while meeting the demands for high performance, downsizing, and thinning of semiconductor packages.

本発明は、上記目的を達成するため、薄肉部と厚肉部とを有する異型断面条材であって、前記厚肉部の内部に流体用の流路が形成されていることを特徴とするリードフレーム用条材を提供する。条材の素材としては、銅または銅合金であることが好ましい。   In order to achieve the above object, the present invention is a modified cross-section strip having a thin part and a thick part, wherein a fluid flow path is formed inside the thick part. Provides lead frame strips. The strip material is preferably copper or a copper alloy.

また、本発明は、上記目的を達成するため、電気的端子となるリードと半導体チップが搭載されるダイパットとを有するリードフレームであって、前記ダイパットの内部に流体用の流路が形成されていることを特徴とするリードフレームを提供する。   In order to achieve the above object, the present invention provides a lead frame having a lead serving as an electrical terminal and a die pad on which a semiconductor chip is mounted, wherein a fluid flow path is formed inside the die pad. A lead frame is provided.

また、本発明は、上記目的を達成するため、上記の本発明に係るリードフレーム用条材の製造方法であって、条材の幅方向において少なくとも２種類の肉厚を有する異型断面条材を成形する工程と、前記条材の厚肉部の一方の面に溝を形成する工程と、前記溝に蓋をすることによって前記厚肉部の内部に流体用の流路を形成する工程とを有することを特徴とするリードフレーム用条材の製造方法を提供する。   In order to achieve the above object, the present invention provides a method for manufacturing a lead frame strip according to the present invention, wherein a modified cross-section strip having at least two types of thickness in the width direction of the strip is provided. A step of forming, a step of forming a groove on one surface of the thick portion of the strip material, and a step of forming a fluid flow path inside the thick portion by covering the groove. There is provided a method for manufacturing a lead frame strip.

本発明によれば、半導体パッケージに対する高性能化・小型化・薄型化の要求に対応しつつ、放熱性能の向上に寄与するリードフレームおよびリードフレーム用条材を提供することができる。   According to the present invention, it is possible to provide a lead frame and a lead frame strip that contribute to an improvement in heat dissipation performance while meeting demands for high performance, downsizing, and thinning of a semiconductor package.

以下に、図を参照しながら、本発明に係る実施の形態を説明する。ただし、本発明はここで取り上げた実施の形態に限定されることはない。   Embodiments according to the present invention will be described below with reference to the drawings. However, the present invention is not limited to the embodiment taken up here.

図１は、本発明に係るリードフレーム用条材の１例を示す模式図であり、図１(ａ)が部分断面斜視図、図１(ｂ)が横断面図である。図に示したように、本発明に係るリードフレーム用条材30は、リードフレーム形状に成形された際にダイパット31となるダイパット部31’とリード32となるリード部32’とが一体に形成され、幅方向に少なくとも２種類の板厚（例えば、薄肉部と厚肉部）を有しており、かつ条材厚肉部（ダイパット部31’）の内部に冷却流体用の流路34が形成されている。なお、前記「厚肉部の内部」とは、リードフレーム形状に成形されてダイパット31になった際に、冷却流体用の流路34の全体がダイパット31に没している状態になるようなものを含む。   1A and 1B are schematic views showing an example of a strip material for a lead frame according to the present invention, in which FIG. 1A is a partial sectional perspective view and FIG. 1B is a transverse sectional view. As shown in the figure, the lead frame strip 30 according to the present invention is formed integrally with a die pad portion 31 ′ that becomes a die pad 31 and a lead portion 32 ′ that becomes a lead 32 when formed into a lead frame shape. And at least two types of plate thicknesses (for example, a thin portion and a thick portion) in the width direction, and a flow path 34 for cooling fluid is provided inside the strip material thick portion (die pad portion 31 '). Is formed. The “inside of the thick portion” means that the entire cooling fluid flow path 34 is submerged in the die pad 31 when the lead frame is formed into the die pad 31. Including things.

また、図１では一山の異型断面条材の場合を例示したが、本発明は一山に限定されるものではなく、複数の山を有する異型断面条材でもよい。異型断面条材の素材としては特に限定されるものではないが、銅または銅合金であることが好ましい。また、ダイパット部31’に搭載する部材も半導体チップ（例えば、シリコンチップやLED素子）に限定されるものではなく、コネクタやコンデンサ等の電子部品であってもよい。   Moreover, although the case of the irregular cross-section strip of one mountain was illustrated in FIG. 1, the present invention is not limited to a single mountain and may be an irregular cross-section strip having a plurality of peaks. Although it does not specifically limit as a raw material of atypical cross-section strip material, It is preferable that they are copper or a copper alloy. The member mounted on the die pad portion 31 'is not limited to a semiconductor chip (for example, a silicon chip or an LED element), and may be an electronic component such as a connector or a capacitor.

つぎに、本発明に係るリードフレーム用条材の製造方法について説明する。まず、リードフレームの材料となる板材を異型断面形状の（幅方向に少なくとも２種類の板厚（例えば、ダイパット部31’とリード部32’）を有する）条材に成形加工する（条材成形工程）。異型断面条材の成形加工方法は、特に限定されず既知の方法を利用することができる。   Next, a method for producing a lead frame strip according to the present invention will be described. First, a plate material which is a material for the lead frame is formed into a strip material having an irregular cross-sectional shape (having at least two plate thicknesses in the width direction (for example, a die pad portion 31 ′ and a lead portion 32 ′)) (strip material forming). Process). The method for forming the irregular cross-section strip is not particularly limited, and a known method can be used.

つぎに、前記異型断面条材の厚肉部の一方の面に溝を形成する（溝形成工程）。溝の形成加工方法も特に限定されず、切削加工や圧延加工など既知の金属加工方法を利用することができる。連続的な溝形成の観点から、各溝は、互いに平行であることが好ましく、条材の長手方向に平行であることが好ましい。また、溝の幅・深さ・本数・ピッチは、期待する冷却能に合わせて適宜設計されればよい。代表的には、幅0.5 mm以上、深さ0.04〜0.6 mm、ピッチ２mm以上などが挙げられる。   Next, a groove is formed on one surface of the thick portion of the irregular cross-section strip (groove forming step). The groove forming method is not particularly limited, and a known metal processing method such as cutting or rolling can be used. From the viewpoint of continuous groove formation, the grooves are preferably parallel to each other, and preferably parallel to the longitudinal direction of the strip. Further, the width, depth, number, and pitch of the grooves may be appropriately designed according to the expected cooling ability. Typically, the width is 0.5 mm or more, the depth is 0.04 to 0.6 mm, and the pitch is 2 mm or more.

つぎに、前記溝に蓋をするように（凹凸の凸部上に当接するように）板材33を接合して流路34を形成する（流路形成工程）ことにより、本発明に係るリードフレーム用条材が製造される。板材の接合方法は特に限定されず、半導体パッケージ製造工程における耐熱性・耐薬品性を有する限り既知の方法を利用することができる。なお、板材11の代わりに溝を形成した異型断面条材同士を張り合わせ、互いに他方の溝に蓋をするような構造でもよい。   Next, the plate material 33 is joined to form a flow path 34 (flow path forming step) so as to cover the groove (abut on the concave and convex portions), thereby forming the lead frame according to the present invention. Strips are manufactured. The method for joining the plate members is not particularly limited, and any known method can be used as long as it has heat resistance and chemical resistance in the semiconductor package manufacturing process. In addition, instead of the plate member 11, a structure may be employed in which atypical cross-section strips in which grooves are formed are bonded together and the other groove is covered with each other.

本発明に係るリードフレーム用条材は、金属材料である異型断面条材の厚肉部（ダイパット部31’）の内部に流路が形成されていることから、プレス工程によりデザインされた所定の形状（ダイパットやリードを有するリードフレーム）に打ち抜くことができる。また、同様の理由により、半導体パッケージにおける樹脂封止部の厚みを最小限に抑えることができ、半導体パッケージの薄型化要求への対応が可能となる。さらに、長尺の条材に対して連続的に流路形成加工をすることができることから量産するのに好適であり、個々の半導体パッケージごとに個別に冷却管を設けるという煩雑な工程を要する従来の半導体パッケージの製造に比して、結果として半導体パッケージの製造コストの低減に寄与できる。   In the lead frame strip according to the present invention, the flow path is formed inside the thick section (die pad section 31 ′) of the irregular cross section strip that is a metal material. It can be punched into a shape (a lead frame having a die pad or lead). For the same reason, the thickness of the resin sealing portion in the semiconductor package can be minimized, and it is possible to meet the demand for a thinner semiconductor package. Furthermore, since the flow path forming process can be continuously performed on a long strip material, it is suitable for mass production and requires a complicated process of individually providing a cooling pipe for each semiconductor package. As a result, the manufacturing cost of the semiconductor package can be reduced as compared with the manufacturing of the semiconductor package.

本発明に係る（ダイパットの内部に流体用の流路が形成されている）リードフレームを使用した半導体パッケージ（実施例１）、ダイパットの内部に流体用の流路の無いリードフレームを使用した従来の半導体パッケージ（比較例１）、ダイパットの内部に流体用の流路の無いリードフレームを使用し樹脂封止部の外面にアルミニウム製の放熱フィンを設置した従来の半導体パッケージ（比較例２）を製造し、半導体チップに同じ負荷を掛けた場合（すなわち、発生熱量が同じ場合）における半導体パッケージの表面温度を比較した。なお、実施例１における流体用の流路の寸法は、幅２mm、高さ１mm、ピッチ５mmとし、比較例２における放熱フィンの寸法は、縦15 mm、横15 mm、高さ6.5 mm、ピッチ３mmとした。また、リードフレームの平面形状および半導体チップはいずれも同じものとし、冷却用流体として20℃の空気を10 m/sの流速で半導体パッケージ面と平行に流した。   A semiconductor package (Example 1) using a lead frame according to the present invention (a flow path for fluid is formed inside a die pad), and a conventional one using a lead frame without a flow path for fluid inside the die pad The conventional semiconductor package (Comparative Example 2) in which a lead frame without a fluid flow path is used inside the die pad and aluminum radiating fins are installed on the outer surface of the resin sealing portion. The surface temperature of the semiconductor package when the same load was applied to the semiconductor chip (that is, when the amount of generated heat was the same) was compared. The dimensions of the fluid flow path in Example 1 are 2 mm in width, 1 mm in height, and 5 mm in pitch. In Comparative Example 2, the dimensions of the radiation fin are 15 mm in length, 15 mm in width, 6.5 mm in height, and pitch. It was 3 mm. The planar shape of the lead frame and the semiconductor chip were the same, and air at 20 ° C. was flowed as a cooling fluid in parallel with the semiconductor package surface at a flow rate of 10 m / s.

比較例１の半導体パッケージの表面温度が100℃を超えるような負荷状況において、実施例１および比較例２の表面温度は60℃程度であり、比較例１に比して放熱能力が高いことが確認された。一方、回路基板上への高密度実装のために要求される半導体パッケージの小型化・薄型化の観点から見ると、樹脂封止部の外面にアルミニウム製の放熱フィンを設置した比較例２は要求を明らかに満たせないと言える。   In a load situation where the surface temperature of the semiconductor package of Comparative Example 1 exceeds 100 ° C., the surface temperature of Example 1 and Comparative Example 2 is about 60 ° C., and the heat dissipation capability is higher than that of Comparative Example 1. confirmed. On the other hand, from the viewpoint of miniaturization and thinning of a semiconductor package required for high-density mounting on a circuit board, Comparative Example 2 in which aluminum radiating fins are installed on the outer surface of the resin sealing portion is required. It can be said that it is not clearly satisfied.

したがって、実施例１に用いたリードフレームは、半導体パッケージに対する高性能化・小型化・薄型化の要求に対応し、かつ放熱性能を向上させられることが明らかになった。なお、特許文献１，２に記載されたような半導体パッケージも高い放熱能力を有すると考えられるが、前述したように、放熱用の冷却管や中空の導管が樹脂封止部に設置されることから樹脂封止部が必然的に厚くなり易く、半導体パッケージの薄型化要求への対応に適さない問題がある。   Therefore, it has been clarified that the lead frame used in Example 1 can meet the demands for high performance, downsizing, and thinning of the semiconductor package and can improve the heat dissipation performance. In addition, although it is thought that the semiconductor package as described in patent documents 1 and 2 also has high heat dissipation capability, as mentioned above, the cooling pipe for heat dissipation and the hollow conduit | pipe are installed in the resin sealing part. Therefore, there is a problem that the resin sealing part is inevitably thick, and is not suitable for meeting the demand for a thinner semiconductor package.

本発明に係るリードフレーム用条材の１例を示す模式図であり、図１(ａ)が部分断面斜視図、図１(ｂ)が横断面図である。It is a schematic diagram which shows one example of the strip for lead frames which concerns on this invention, Fig.1 (a) is a fragmentary sectional perspective view, FIG.1 (b) is a cross-sectional view. 従来の半導体パッケージの概略を示す断面模式図である。It is a cross-sectional schematic diagram which shows the outline of the conventional semiconductor package. 従来の異型断面条材の例を示す横断面模式図である。It is a cross-sectional schematic diagram which shows the example of the conventional atypical cross-section strip.

符号の説明Explanation of symbols

１…半導体パッケージ、２…半導体チップ、
３…リードフレーム、31…ダイパット、32…リード、
３’…リードフレーム用条材、31’…ダイパット部、32’…リード部、
４…ボンディングワイヤ、５…モールド樹脂、６…放熱フィン、
30…リードフレーム用条材、33…板材、34…流路。 1 ... semiconductor package, 2 ... semiconductor chip,
3 ... lead frame, 31 ... die pad, 32 ... lead,
3 '... Lead frame material, 31' ... Die pad part, 32 '... Lead part,
4 ... bonding wire, 5 ... mold resin, 6 ... radiating fin,
30 ... strip material for lead frame, 33 ... plate material, 34 ... flow path.

Claims (4)

薄肉部と厚肉部とを有する異型断面条材であって、前記厚肉部の内部に流体用の流路が形成されていることを特徴とするリードフレーム用条材。   A lead frame strip having a thin section and a thick section, wherein a fluid passage is formed inside the thick section. 請求項１に記載のリードフレーム用条材において、前記条材の素材が銅または銅合金であることを特徴とするリードフレーム用条材。   2. The lead frame strip according to claim 1, wherein a material of the strip is copper or a copper alloy. 電気的端子となるリードと半導体チップが搭載されるダイパットとを有するリードフレームであって、前記ダイパットの内部に流体用の流路が形成されていることを特徴とするリードフレーム。   A lead frame having a lead serving as an electrical terminal and a die pad on which a semiconductor chip is mounted, wherein a fluid flow path is formed inside the die pad. 請求項１または請求項２に記載のリードフレーム用条材の製造方法であって、条材の幅方向において少なくとも２種類の肉厚を有する異型断面条材を成形する工程と、前記条材の厚肉部の一方の面に溝を形成する工程と、前記溝に蓋をすることによって前記厚肉部の内部に流体用の流路を形成する工程とを有することを特徴とするリードフレーム用条材の製造方法。   A method of manufacturing a strip material for a lead frame according to claim 1 or 2, wherein a step of molding a modified cross-section strip having at least two types of thickness in the width direction of the strip, A lead frame comprising: a step of forming a groove on one surface of the thick portion; and a step of forming a fluid flow path inside the thick portion by covering the groove. Manufacturing method of strip material.
JP2007334063A 2007-12-26 2007-12-26 Bar for lead frame, the lead frame, and manufacturing method of bar for the lead frame Pending JP2009158674A (en)

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