JP2009157114A - Waveguide type optical interferometer circuit - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a waveguide type optical interferometer circuit which is strong against manufacture errors. <P>SOLUTION: In the waveguide type optical interferometer circuit wherein respectively independent waveguide type optical interferometers are cascade connected in at least two stages, the waveguide type optical interferometers have waveguides provided with a desired optical path length difference, the waveguide of the longer optical path of one of the waveguide type optical interferometers in at least two stages and the waveguide of the longer optical path of the other one of the waveguide type optical interferometers in at least two stages relative to a center line drawn from the input side to the output side of the respective waveguide type optical interferometers are disposed in opposite directions. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a waveguide type optical interferometer circuit, and more particularly to a waveguide type optical interferometer circuit that connects an optical interferometer using a waveguide to realize an optical switch, a multiplexer / demultiplexer, and the like.

  In the current communication network, various optical components such as an optical switch / multiplexer / demultiplexer are used. The optical switch is used to flexibly switch the route according to a communication failure or according to demand. The multiplexer / demultiplexer is used for wavelength multiplexing / demultiplexing a number of channels in a single optical fiber, and supports the current large-capacity optical communication. There are various methods for realizing these optical components. However, the method using a waveguide can be integrated in a small size, has no moving parts, is structurally stable, and has excellent reliability, and lithography. It has many features that it is excellent in mass productivity by technology.

  FIG. 1 shows a configuration example of an optical switch 100 using a waveguide. The optical switch 100 includes a Mach-Zehnder interferometer comprising two 50% directional couplers 101, 102, a short arm side waveguide 103 connecting the two 50% directional couplers 101, and a long arm side waveguide 104. MZI) is a basic configuration, and at least one of the connecting waveguides (the short arm side waveguide 103 side in the figure) is equipped with a phase shifter 105 that changes the phase of the guided light by changing the refractive index of the waveguide. ing. In this case, the phase shifter 106 may be provided on the long arm side waveguide 104 side, and the length of the two coupling waveguides 103 and 104 is usually equal or the optical path for a half wavelength of the operating wavelength λ0. Designed with one of the long differences. In FIG. 1, the waveguide length difference ΔL (= λ0 / 2neff; neff: effective refractive index of the waveguide) for half wavelength is taken into consideration for consistency with the embodiments described later (in the figure, the upper side is the short arm). The side waveguide 103 and the lower side as the long arm side waveguide 104 provide a half-wavelength optical path length difference). The signal light from the input 1 is guided to the output 1 (bar path) when the phase shifter is not operating (when OFF) according to a known interference principle, and generates a phase shift amount π corresponding to a half wavelength in the phase shifter. Thus, when the above ΔL is canceled (when On), it is led to the output 2 (cross path). When the phase shift amount generated by the phase shifter takes an intermediate value of On / Off, the output (that is, the transmittance) of each path changes in an analog manner according to the phase shift amount.

  Theoretically, the switch OnOff ratio (transmittance ratio between Off and On) is infinite, but in reality, the manufactured optical switch has imperfections (phase error, polarization conversion, scattered light, etc.) Due to, it will not be infinite. Therefore, in order to obtain a high OnOff ratio, a waveguide type optical switch for practical use often uses a double MZI configuration in which two switch elements are connected in cascade.

  FIG. 2 shows a configuration of a double MZI optical switch (for example, refer to Patent Document 1 / Non-Patent Document 1). 2A mainly shows the configuration of the optical switch 200 for 1 × N or N × 1, and FIG. 2B shows the configuration of the optical switch 210 mainly for N × M. 2 (a) and 2 (b) differ only in the positional relationship between the input and output ports, and in the path from the input port to the output port (On path), the short-side waveguides 203 and 213 and the long-side waveguide are different. Two-stage MZI switch elements including first-stage MZI switch elements 201 and 211 having waveguides 204 and 214, and rear-stage MZI switch elements 202 and 212 respectively having short-side waveguides 205 and 215 and long-side waveguides 206 and 216. The connection configuration through the elements is the same. In this switch, since the leakage light from the first-stage element is blocked by the second-stage element in the On path, the OnOff ratio is approximately double in decibel notation as compared with the single-element switch. On the other hand, in the Off path (the path from the input to the Thr output and the path from the Thr input to the output), the MZI switch element passes through only one stage, so the same OnOff ratio as that of the single element switch is obtained.

  These double MZI optical switches are often used as basic elements to construct large-scale optical switches as shown in FIG. In the tap type 1 × N switch 300 shown in FIG. 3A, the optical switch 200 shown in FIG. 2A is used as the 1-input 2-output switch 301. The N × 1 switch is similarly configured by changing the input and output, and the switch element shown in FIG. 2A is used as a two-input one-output switch. Further, in the N × N switch 310 shown in FIG. 3B, the optical switch 210 shown in FIG. 2B is used as the 2-input 2-output switches 311 and 312. As shown in FIG. 3B, the 2-input 2-output switches 311 and 312 are arranged upside down. The crosstalk characteristics of these large-scale switches are almost determined by the OnOff ratio in the On path of each switch element used therein. Since the double MZI optical switch element has an excellent OnOff ratio especially in the On path as described above, it is one of the configurations that are very suitable for application to these large-scale switches.

  Next, FIG. 4 shows a configuration example of a multiplexer / demultiplexer using a waveguide. 4A shows the configuration of a single multiplexer / demultiplexer 400, and FIG. 4B shows the configuration of the multiplexer / demultiplexer 410 connected in two stages. The multiplexer / demultiplexer 400 has substantially the same MZI configuration as the optical switch shown in FIG. 1, but the waveguide length difference ΔL, which is the difference between the long-side waveguide 401 and the short-side waveguide 402, is larger than that of the switch. Is set. Further, since there is usually no dynamic operation like a switch, the phase shifter is often omitted. The signal light from the input 1 has a frequency fe (= m · c / (neff · ΔL); c: speed of light, m: a positive integer) to the output 2 and the frequency fo (= The signal light of (m−0.5) · c / (neff · ΔL)) is demultiplexed to output 1. If the input and output are reversed, the signal light with the frequency fe and the signal light with the frequency fo can be multiplexed. As described above, the multiplexer / demultiplexer 410 shown in FIG. 4A is also called an interleave filter because it can multiplex / demultiplex even-channel light fe and odd-channel light fo.

  In many cases, the refractive index of a substance has temperature dependency, that is, a thermo-optic effect. In the case of the optical switch described above, this effect is actively used to realize a phase shifter. However, in a completely passive component such as a multiplexer / demultiplexer, there should be no characteristic fluctuation over a wide temperature range. Since it is preferable, a material having no thermo-optic effect may be used, or the temperature independence may be realized by devising an equivalent thermo-optic effect. As a specific example of the latter, a material having a sign of temperature fluctuation opposite to the temperature fluctuation dneff / dT of the effective refractive index of the waveguide is applied to the waveguide on the side where the waveguide length difference ΔL is added. There is a method of canceling the temperature fluctuation of the optical path length difference by introducing it.

  The multiplexer / demultiplexer 400 also has a manufacturing imperfection, and the signal light of fo leaks to the output 2 and the signal light of fe leaks to the output 1 to some extent and crosstalk occurs. Therefore, in order to obtain low crosstalk characteristics as in the case of the optical switch, a configuration in which the same MZI is connected in two stages as in the multiplexer / demultiplexer 410 shown in FIG. 4B may be used. In the case of the multiplexer / demultiplexer, it is necessary to improve the characteristics of both the output 1 side and the output 2 side. A total of 3 of the former stage MZI branching element 411 including the waveguide 414 and the short side waveguide 415, and the rear stage MZI branching elements 412 and 413 including the long side waveguides 416 and 418 and the short side waveguides 417 and 419, respectively. The MZI of the element is connected.

  These interferometer optical components are realized by, for example, a quartz-based waveguide manufactured on a silicon substrate. For the optical switch, for example, a thermo-optic phase shifter using a thin film heater is used. As a manufacturing method, for example, a combination of a glass film deposition technique such as a flame deposition (FHD) method and a fine processing technique such as reactive ion etching (RIE) is used.

  Specifically, a glass film to be a lower clad layer is deposited / transparent on a silicon substrate, and subsequently a core layer having a refractive index slightly higher than that of the clad layer is deposited. Then, a core pattern to be an optical waveguide circuit is patterned by a fine processing technique, and a glass film to be an upper clad layer is deposited / transparent to obtain an embedded optical waveguide. Finally, a metal to be a thin film heater is deposited on the surface of the upper clad by a vacuum deposition method or the like, and this is patterned by a fine processing technique, and a thermo-optic phase shifter is loaded.

Japanese Patent No. 3253007 (FIG. 11) H. Takahashi, et al., "High Performance 8-arrayed 1x8 optical switch based on planar lightwave circuit for photonic networks", ECOC2002, 4.2.6 (Figs. 1 and 3)

  However, in an optical switch based on an interferometer using such a waveguide, a double MZI configuration is used because of the optical path length error, that is, the phase error of the waveguide generated in the manufacturing process. There is often a problem that the OnOff ratio required in the specification cannot be obtained. For the same reason, the multiplexer / demultiplexer has a problem that a desired low crosstalk characteristic cannot be obtained and the center wavelength does not fall within a desired range.

  The present invention has been made in view of such problems, and an object of the present invention is to provide a waveguide type optical interferometer circuit that is resistant to manufacturing errors.

  In order to achieve such an object, the invention described in claim 1 is a waveguide-type optical interferometer circuit in which independent waveguide-type optical interferometers are connected in cascade in at least two stages. The type optical interferometer has a waveguide provided with a desired optical path length difference, the longer one of the optical paths of the at least two-stage waveguide type optical interferometers, and the respective waveguide types With respect to the center line drawn from the input side to the output side of the optical interferometer, the longer waveguide of the other optical path of the at least two-stage waveguide type optical interferometer is arranged in the opposite direction. It is characterized by being configured.

  According to a second aspect of the present invention, there is provided a waveguide type optical interferometer in which the number of the one waveguide type optical interferometer and the longer waveguide of the other optical path are arranged in opposite directions. The difference from the number is 0 or 1.

  According to a third aspect of the present invention, the one waveguide optical interferometer and the waveguide optical interferometer in which the longer waveguide of the other optical path is disposed in the opposite direction are alternately arranged. It is characterized by being connected to.

  According to a fourth aspect of the present invention, the waveguide type optical interferometer is characterized in that the value of the optical path length difference is corrected based on an average in-plane distribution of effective refractive index.

  The invention according to claim 5 is characterized in that the optical path length difference provided in all of the waveguide type optical interferometers is set shorter or longer than the desired design value. And

  According to a sixth aspect of the present invention, the optical path length difference provided in the one waveguide type optical interferometer and a waveguide in which the longer waveguide of the other optical path is disposed in the opposite direction. Regarding the optical path length difference provided in the waveguide type optical interferometer, one of the optical path length differences is set shorter than the desired design value, and the other of the optical path length differences is set longer than the desired design value. It is characterized by that.

  The invention according to claim 7 is a Mach-Zehnder interferometer in which the waveguide type optical interferometer has two arm waveguides, and a waveguide type light having a phase shifter in at least one of the arm waveguides. It is a switch.

  The invention according to claim 8 is a large-scale switch in which the waveguide optical interferometer circuit is formed by connecting a plurality of the waveguide optical switches, and the first stage of the waveguide optical switch. The waveguide optical switch is characterized in that the direction in which the waveguide with the longer optical path in the eye is laid out is switched between the odd-numbered and even-numbered columns of the waveguide-type optical switch.

  According to a ninth aspect of the present invention, the waveguide type optical interferometer includes an N-input M-output coupler, an M-input L-output coupler, and M arm waveguides sandwiched between the N-input M-output coupler and the k-th arm guide. The waveguide type optical filter is characterized in that the length of the waveguide is arbitrary L = (k−1) · ΔL + L0; L0 ≧ 0.

  According to the present invention, the waveguide side to which the optical path length difference ΔL of each waveguide type optical interferometer is added is laid out in substantially opposite directions at each stage, thereby causing isotropic and azimuth-dependent errors. Since the probability of OnOff ratio and low crosstalk degradation with respect to the phase error is small, and the influence of the wavelength shift due to the phase error due to the azimuth-dependent error cancels out, a waveguide type optical interferometer circuit that is resistant to manufacturing errors can be obtained.

  FIG. 5 shows a layout configuration of a double MZI optical switch as an example of a waveguide type optical interferometer circuit according to the first embodiment of the present invention. FIGS. 5A and 5B correspond to FIGS. 2A and 2B, respectively. FIG. 5A is an optical switch mainly for 1 × N or N × 1. FIG. 5B mainly shows the configuration of the N × M optical switch 510. The layout configuration of the present embodiment is generally the same as the conventional configuration, but the configuration is different in the following points. In the conventional configuration, the upper MZI switches 201 and 211 and the rear MZI switches 202 and 212 are both short-side waveguides 203, 213, 205, and 215 on the upper side and long-side waveguides 204, 214, 206, and 216 on the lower side, The upper and lower arrangement relations of the short-side waveguide and the long-side waveguide are aligned in the same direction at the front stage / back stage. However, in the present embodiment, the upper stage MZI switches 501 and 511 have the short side waveguides 503 and 513 on the upper side and the long side waveguides 504 and 514 on the lower side, and the upper stage MZI switches 502 and 512 have the long side guide on the upper side. The lower sides of the waveguides 506 and 516 are the short-side waveguides 505 and 515, and the waveguides 506 and 516 are different in that the waveguides are arranged symmetrically with respect to the center line at the front stage / back stage. That is, it differs greatly from the conventional configuration in that the relative relationship in the vertical arrangement direction of the long / short arms of the front MZI switches 501 and 511 and the rear MZI switches 502 and 512 is reversed.

  FIG. 6 shows a layout configuration of a double MZI optical switch as an example of a waveguide type optical interferometer circuit according to the second embodiment of the present invention. Optical switches 600 and 610 shown in FIGS. 6A and 6B correspond to the optical switches 500 and 510 shown in FIGS. 5A and 5B, respectively. The layout configuration of the present embodiment includes the preceding MZI switches 601 and 611 including short-side waveguides 603 and 613 and long-side waveguides 604 and 614, short-side waveguides 605 and 615, and long-side waveguides 606 and 616, respectively. Are different from the first embodiment in that the rear stage MZI switches 602 and 612 are folded back, but the long arms / shorts of the front stage MZI switches 601 and 611 and the rear stage MZI switches 602 and 612 are different. The point that the relative relationship in the vertical arrangement direction of the arms is reversed is the same as in the first embodiment.

The reason why the present invention is a circuit that is more resistant to manufacturing errors than the conventional configuration will be described below.
The optical path length error of the waveguide, that is, the phase error, occurs due to various manufacturing factors such as the refractive index fluctuation of the material, the fluctuation of the waveguide core size, and the fluctuation of the physical length of the waveguide itself due to the deformation of the circuit pattern. When statistically analyzing the phase error of the circuit to be manufactured, the error does not occur at random, but two errors having a certain tendency, an isotropic error δφbase, and an anisotropic error It has been found from recent experimental studies that the error can be classified into three types, that is, the error δφdir and the disordered error δφram having no tendency.

  The first isotropic phase error δφbase is an error that occurs as a uniform value for all elements when viewed in a limited area such as the entire wafer or in a chip in which elements are integrated. And it does not have orientation dependency. That is, when a certain wafer or a certain chip is taken out, all the δφbases of the elements manufactured therein have the same value. Manufacturing factors that cause this error include fluctuations in the effective refractive index caused by deviations in the refractive index of the material, deviations in the core film thickness / shifts in the core width, and the like. The effective refractive index variation δneff brings about a variation in optical path length difference and a phase error of δφbase = −2π · δneff · ΔL / λ0. Further, even when the actual wavelength used is different from the design wavelength λ0, a uniform phase error occurs, so that an equivalent isotropic phase error occurs. For example, in the case of the MZI switch designed with the waveguide length difference corresponding to the half wavelength shown in FIG. 1, with respect to the wavelength deviation δλ, δφbase = −π · (λ0 / λ−1) ≈π · δλ / λ0 A phase error occurs. In the interferometer circuit of ΔL = 0, even if the effective refractive index variation δneff occurs, the errors are equal in each waveguide and cancel each other as a difference between the paths. Therefore, an isotropic phase error δφbase is generated. do not do.

  The second anisotropic error δφdir is a phase error having azimuth dependency, and is an error in which the optical path length of a waveguide in a specific direction is always increased. For example, the bottom waveguide (orientation flat) waveguide of the wafer is always longer than the top waveguide, or the center waveguide of the wafer is always longer than the surrounding waveguide. It is. Manufacturing factors causing this error include material refractive index and in-plane distribution of effective refractive index due to in-wafer distribution such as core film thickness / core width processing. This anisotropic error δφdir is an error that occurs due to the relative positional relationship of the waveguides, and therefore also occurs in an interferometer circuit with ΔL = 0.

  The third disordered error δφram is literally a random error that occurs due to local fluctuations in the effective refractive index and does not occur between adjacent interferometer circuits in the same chip or between interferometer circuits that have the same relative positional relationship. It is an error that occurs in the correlation.

  The phase error δφ is δφ = δφbase + δφdir + δφram as the sum of the above errors, but for the sake of simplicity of explanation, in the following explanation, the term of δφram is ignored because it is sufficiently small.

  When the phase error of the MZI optical switch element shown in FIG. 1 is δφ [rad], the transmittance Toff [dB] at the time of OFF in the path from the input 1 to the output 2 is expressed by the following equation (1). . The off operation as a switch is performed when no current or voltage is applied to the phase shifter.

  Further, in the interferometer circuit sufficiently close to the undulation period of the above-described distributed shape, the error δφbase of the preceding MZI switch element, the error δφbase of the subsequent MZI switch element, the error δφdir of the preceding MZI switch element, and the error δφdir of the subsequent MZI switch element The errors δφdir have almost the same value. Therefore, in the conventional double MZI optical switch shown in FIG. 2, the vertical and vertical relations (direction relations) of the short arm / long arm are the same, and therefore the phase error in both the front stage MZI switch element and the rear stage MZI switch element is δφ = δφbase + δφdir, and the transmittance Toff [dB] at the time of OFF in the path from the input to the output of the conventional double MZI optical switch shown in FIG. 2 is expressed by the following equation (2).

  On the other hand, in the double MZI optical switch of the present invention, since the vertical relationship (direction relationship) of the short arm / long arm is inverted, the sign of the azimuth phase error δφdir is inverted between the preceding stage and the subsequent stage. Therefore, when the phase error of the front MZI switch element is δφ = δφbase + δφdir, the phase error of the rear MZI switch element is δφ = δφbase−δφdir, and the dual MZI optical switch of the present invention shown in FIGS. The transmittance Toff [dB] at the time of OFF in the path from the input to the output is expressed by the following equation (3).

  FIG. 7 shows the dependence of the transmittance calculated by the above equation on the isotropic phase error δφbase using the azimuth phase error δφdir as a parameter. FIG. 7A shows the result in the configuration of the prior art, and FIG. 7B shows the result in the configuration of the present invention. When the required value in the specification of the OnOff ratio [dB] (= Ton−Toff; Ton: transmittance [dB] when On is theoretically 0 dB) is 40 dB or more, that is, the required value of transmittance when Off. In the configuration of the prior art, when the azimuth-dependent phase error δφdir is + 0.06π [rad], there is almost no margin on the + side of the isotropic phase error δφbase. On the other hand, in the configuration of the present invention, even if a similar azimuth-dependent phase error occurs, the isotropic phase error has a margin of 0.08π [rad] or more on both the + side and the − side. Even if an error and an orientation-dependent phase error occur at the same time, the probability of satisfying the off-time transmittance requirement is higher than that of the prior art configuration.

  FIG. 8 is a redrawing of FIG. 7 as a contour map of the OnOff ratio in order to investigate the characteristic deterioration of the OnOff ratio due to the phase errors δφbase and δφdir in more detail. Similarly to FIG. 7, FIG. 8A shows the result in the configuration of the prior art, and FIG. 8B shows the result in the configuration of the present invention. Since each phase error δφbase and δφdir are considered to be almost independent events, if the standard deviation σ of each phase error is 0.02π [rad], a circle with a radius of 0.06π [rad] which is ± 3σ. In this case, almost all cases are distributed. In the configuration of the present invention shown in FIG. 8B, the OnOff ratio of 40 dB can be secured in a circle having a radius of 0.06π [rad], and the configuration of the related art in FIG. It can be seen that the OnOff ratio of 40 dB cannot be secured in a part (the part shown by hatching). As described above, the configuration of the present invention has a low probability of characteristic deterioration with respect to the phase error due to the isotropic error and the orientation-dependent error, and can be said to be a configuration resistant to manufacturing errors.

  It should be noted that a phase error that occurs when the operating wavelength is assured to some extent (for example, in the case of 1480 to 1650 nm operation guarantee, a phase error of about ± 0.06π [rad] at maximum is generated in principle by the above formula. 8), the horizontal axis in FIG. 8 is an event that can occur reliably in the range of this isotropic phase error, so the above distribution is not a circle. It needs to be expanded into a square (dashed line in the figure). As can be seen from the figure, in this case, in the conventional configuration shown in FIG. 8 (a), the area where the OnOff ratio of 40 dB cannot be secured further increases, whereas as shown in FIG. 8 (b). In the configuration of the present invention, a desired OnOff ratio can be secured even in the enlarged region. Thus, it can be seen that the configuration of the present invention is also effective from the viewpoint of expanding the operating wavelength region.

  Further, the amount of phase shift generated by the phase shifter at the time of On is usually π. However, when there is a phase error δφ, δφ + π including the amount is the optimum amount of phase shift that maximizes the transmittance. Therefore, in the conventional configuration, the optimum phase shift amount is δφbase + δφdir + π in both the front stage / back stage MZI switch elements, and the optimum phase shift amount changes according to each phase error. On the other hand, in the configuration of the present invention, the optimum phase shift amount of the preceding MZI switch element is δφbase + δφdir + π, and the optimum phase shift amount of the latter stage MZI switch element is δφbase−δφdir + π. Therefore, there is a merit that the variation of the optimum phase shift amount in the average value is reduced.

  For example, when a thermo-optic phase shifter is used, the optical switch with the configuration of the present invention has less variation in the average power consumption of the phase shifter than the optical switch with the conventional configuration, and the heat dissipation design accuracy of the device Can be improved. In order to simplify the device configuration, the electrical connection wiring of the phase shifters of the front / rear MZI switch may be connected in series or in parallel, and the optimum drive point at this time is the front / rear MZI. Since the average value of the switch is the same as the power consumption, the optical switch having the configuration of the present invention has less fluctuation of the driving point compared to the optical switch having the conventional configuration, so that the driving device such as a constant voltage source or a constant current source can be obtained. There is also an advantage that the requirement of the driving range can be relaxed.

  The in-plane distribution shape such as the effective refractive index that causes the azimuth-dependent phase error is slightly different for each wafer, but if the same circuit is fabricated with the same device, the distribution may be almost similar. Therefore, by performing design correction based on the average distribution shape, it is possible to reduce the influence of the orientation-dependent phase error to some extent. In this way, after correcting to some extent by design, the in-plane distribution that differs from wafer to wafer and remaining in-plane distribution that cannot be corrected by design are further improved by reducing the influence of the configuration of the present invention. Special characteristics can be obtained.

  Next, the configuration of a double MZI optical switch will be described as an example of a waveguide type optical interferometer circuit according to a third embodiment of the present invention. The basic configuration is the same as in the first embodiment or the second embodiment, and the relative relationship of the vertical arrangement of the long arm / short arm of the front MZI switch and the rear MZI switch is reversed. In addition to this, a slight offset is added to the optical path length difference for half a wavelength. In a normal configuration, the MZI is configured by providing an optical path length difference corresponding to a half wavelength, that is, a phase difference π, but in the present embodiment, a slight offset phase α is added to configure the MZI. At this time, the transmittance Toff [dB] is expressed by the following equation 4.

  For example, when α = 0.04π [rad] and ΔL is slightly longer than the waveguide length difference corresponding to the half wavelength, the contour map of the OnOff ratio is as shown in FIG. FIG. 9 (b) is a contour map in the first and second embodiments, reprinted as a comparison. In FIG. 9A, the contour map is shifted to the right by + 0.04π [rad] compared to FIG. 9B.

  Therefore, this embodiment is particularly advantageous when the error has the following tendency. The standard deviation σ (δφdir) of the orientation-dependent phase error δφdir is larger than the standard deviation σ (δφbase) of the isotropic phase error δφbase. For example, σ (δφdir) = 0.022π [rad], σ (δφbase) = 0 In the case of .008π [rad], a region in which almost all cases are considered to be distributed is a vertically long ellipse region as shown by a broken line in FIG. As can be seen by comparing FIG. 9 (a) and FIG. 9 (b), in this embodiment, an OnOff ratio of 40 dB can be secured, whereas in the first and second embodiments, a part (shown by hatching) is obtained. In the portion shown), an OnOff ratio of 40 dB cannot be secured. Thus, this embodiment can be said to be an advantageous configuration when the variation (standard deviation) due to the azimuth-dependent phase error is larger than the variation (standard deviation) due to the isotropic phase error.

  In the above description, ΔL is lengthened and α is a positive value. However, when ΔL is shortened to a negative value, the only difference is that the contour map shifts to the left. Therefore, the same advantage as described above can be obtained in the case of a negative value.

  The optimum value of the offset phase amount α is determined by the ratio of σ (δφdir) and σ (δφbase) and the required OnOff ratio. Basically, an ellipse having an aspect ratio of σ (δφdir) and σ (δφbase) on the contour line of the required OnOff ratio is appropriately adjusted in size, as shown in FIG. An offset amount that touches at a point is an optimum value. Note that these three points are the three points of the upper and lower contour lines and the left contour line when α is a positive value, and the three points of the upper and lower contour lines and the right contour line when α is a negative value.

  Next, the configuration of a double MZI optical switch will be described as an example of a waveguide type optical interferometer circuit according to a fourth embodiment of the present invention. The basic configuration is the same as that of the third embodiment, and in addition to the configuration of the first embodiment or the first embodiment, a slight offset phase α is added to the optical path length difference corresponding to the half wavelength of MZI. However, the third embodiment is different from the third embodiment in that the sign of the offset phase added by the front MZI switch and the rear MZI switch is inverted. That is, when a + α offset phase is added to the preceding MZI switch, a −α offset phase is added to the succeeding MZI switch. At this time, the transmittance Toff [dB] is expressed by the following equation (5).

  For example, when α = −0.04π [rad] and ΔL is slightly shorter than the waveguide length difference for half a wavelength for the former MZI switch and longer for the latter MZI switch, the contour map of the OnOff ratio is As shown in FIG. FIG. 10 (b) is a contour map in the first and second embodiments, reprinted as a comparison. In FIG. 10A, the contour map is shifted downward by + 0.04π [rad] compared to FIG. 10B.

  Therefore, the present embodiment is particularly advantageous when the error has the following tendency. The standard deviation σ (δφbase) of the isotropic phase error δφbase is larger than the standard deviation σ (δφdir) of the orientation-dependent phase error δφdir, for example, σ (δφbase) = 0.022π [rad], σ (δφdir) = 0 In the case of .008π [rad], a region in which almost all cases are considered to be distributed is a horizontally long elliptical region as indicated by a broken line in FIG. As can be seen by comparing FIG. 10 (a) and FIG. 10 (b), in this embodiment, an OnOff ratio of 40 dB can be secured, whereas in the first and second embodiments, a part (shown by hatching) is shown. The OnOff ratio of 40 dB cannot be ensured in the portion). Thus, this embodiment can be said to be an advantageous configuration when the variation (standard deviation) due to the isotropic phase error is larger than the variation (standard deviation) due to the orientation dependent phase error.

  In the above description, α is a negative value. However, when it is a positive value, the only difference is that the contour map shifts upward. Therefore, the same advantages as described above can be obtained in the case of a positive value.

  As in the third embodiment, the optimum value of the offset phase amount α is determined by the ratio of σ (δφdir) and σ (δφbase) and the required OnOff ratio. Basically, an ellipse whose aspect ratio is the ratio of σ (δφdir) and σ (δφbase) is arranged on the contour line of the required OnOff ratio, as shown in FIG. An offset amount that touches at a point is an optimum value. The three points are the upper contour line and the left and right contour lines when α is a negative value, and the lower contour line and the left and right contour lines when α is a positive value. Become.

  In the first to fourth embodiments described above, the MZI is based on a waveguide length difference corresponding to a half wavelength. This is for ensuring a wide operating wavelength range. In the case of the waveguide length difference ΔL (= k · {λ0 / 2neff}; k: integer), the phase difference Δφ of the arm waveguide of MZI is Δφ = 2π · neff · ΔL / λ0. Because the phase difference Δφ moves greatly even with a slight difference in λ0, the operating wavelength range is narrowed. Therefore, as an optical switch, it is desirable to design a waveguide length difference for a half wavelength, which is the case of k = 1 where ΔL is the shortest. That is, in the optical switch, the optical path length difference corresponding to the half wavelength becomes a desired optical path length difference. However, the waveguide length difference other than k = 1 may be used as long as the operation with only the single wavelength λ0 is acceptable. When k is an odd number, a bar operation is performed when Off, and when k is an even number, a cross operation is performed when Off.

  In any case, even if it is other than the waveguide length difference for a half wavelength, as shown in the first and second embodiments, the upper and lower arrangement directions of the long arm / short arm of the front MZI switch and the rear MZI switch By reversing the relative relationship, this configuration reduces the probability of characteristic deterioration with respect to the phase error due to the isotropic and azimuth-dependent errors, and the configuration remains strong against manufacturing errors. Further, when the variation due to the isotropic phase error (standard deviation) and the variation due to the orientation dependent phase error (standard deviation) are different, the phase error can be further increased by adding the offset phase shown in the third and fourth embodiments. There is no change in the yield strength can be optimized.

[16 stations 1 x 4 switches]
FIG. 11 shows the configuration of a 16-unit 1 × 4 switch chip 700 manufactured as the first embodiment. The 1 × 4 switch 701 of the 16-unit 1 × 4 switch chip 700 has a tap configuration in which 1 × 2 switch elements 702 are connected in four stages in cascade. For each 1 × 2 switch element 702, the structure of the double MZI optical switch element 500 having the orientation inversion arrangement shown in FIG. 5A, which is the structure of the present invention, was used. Each MZI of the front-stage MZI switch 703 and the rear-stage MZI switch 704 constituting the double MZI optical switch element 702 is provided with a waveguide length difference corresponding to a half wavelength, and the front-stage MZI switch 703 has an upper side to the short arm 705. The lower arm is a long arm 706, and the rear stage MZI switch 704 has an upper arm 708 on the upper side and a short arm 707 on the lower side. In this case, the operating wavelength center λ 0 is set to 1570 nm on the premise that the EDFA is used in the C band / L band (operating wavelength range: 1520 to 1620 nm).

  This switch chip was fabricated on a silicon substrate 709 using a quartz-based waveguide 710. The relative refractive index difference between the core 711 and the clad 712 of the waveguide 710 is 1.5%. The chip size was 65 × 13 mm. Further, the cladding 712 around the thin film heater 713 that is a thermo-optic phase shifter is deleted by a microfabrication technique to reduce power consumption, and a heat insulating groove 714 is formed. Although not shown in the drawing, an electric wiring pattern for supplying a drive current is formed on each heater 713, and the drive current for the OnOff switch is the heater on the short arm 705, 707 side. 713 is powered. Moreover, the power consumption at the time of On was about 100 mW per 1 MZI. The insertion loss at On was about 2 dB including the fiber connection loss.

  The OnOff ratio of each double MZI optical switch element 702 was evaluated with the worst value at 1520 to 1620 nm in the operating wavelength range. In addition, a total of 64 double MZI optical switch elements 702 are integrated in the chip. At the time of shipping the chip, the value of the element with the worst characteristics is used as the determination criterion. The chip was evaluated as the worst value of the OnOff ratio.

  FIG. 12 shows a summary of OnOff ratio worst value data for 50 chips. FIG. 12A shows the result of this example, and FIG. 12B shows the result of the switch chip by the conventional same-direction arrangement double MZI optical switch element fabricated at the same time for comparison. In the conventional configuration, the worst OnOff ratio of some chips is less than 40 dB, and some chips can only be obtained about 35 dB. However, in the configuration of the present invention, the characteristics of 43 dB or more are stable in all chips. I was able to get it.

[8x8 matrix switch]
FIG. 13 shows a layout of an 8 × 8 matrix switch manufactured as the second embodiment. The overall configuration of the 8 × 8 matrix switch 800 is basically a configuration in which the configuration shown in FIG. 3B is modified to N = 8, and each of the 2 × 2 switch elements 801 and 802 used internally has The configuration of the double MZI optical switch element 510 having the orientation inversion arrangement shown in FIG. 5B, which is the configuration of the present invention, was used. Each MZI constituting the double MZI optical switch element is provided with a waveguide length difference ΔL corresponding to a half wavelength, and the short arm side / long arm side is vertically inverted by the front stage MZI switch and the rear stage MZI switch. . This time, on the premise that the EDFA is used in the C band (operating wavelength range: 1530 to 1560 nm), the operating wavelength center λ0 is set to 1545 nm, and in this embodiment, an offset phase of 2% is added. That is, a waveguide length difference that is 2% longer than the normal ΔL is provided.

  In FIG. 13, portions surrounded by broken lines are 2 × 2 switch elements 801 and 802, respectively. Although it looks a little more complicated than the diagram shown in FIG. 3B, this is because the subsequent MZI switches of 2 × 2 switch elements 801 and 802 are laid out in the same stage as the previous MZI switch of the 2 × 2 switch in the next row. This is because the chip length is shortened. Note that the numbers (1) to (8) described in the lower part of the drawing represent the numbers of the respective columns of the 2 × 2 switch elements 801 and 802.

  In the present embodiment, the front MZI switch 803 of the 2 × 2 switch element 801 in the odd-numbered columns (1), (3), (5), (7) has the upper side to the short arm 805 and the rear MZI. The switch 804 has a short arm 807 on the lower side, and the front MZI switch 804 of the 2 × 2 switch element 802 in the even-numbered columns (2), (4), (6), (8) has a short arm 807 on the lower side. Further, the rear MZI switch 803 has the short arm 805 on the upper side, and the short arm arrangement in the front MZI is switched upside down in the odd and even columns. In addition to the configuration A, the front MZI switch of all 2 × 2 switch elements has a short arm on the upper side, and the rear MZI switch has a short arm on the lower side, so that the short arm arrangement in the front MZI is unified. There is also B. Either configuration is the configuration of the present invention in which the short arm side / long arm side is turned upside down with the front stage MZI switch / back stage MZI switch, but the former stage in the odd-numbered row and the even-numbered row is the same. The configuration A in which the short arm arrangement in the MZI is switched up and down is advantageous in the following points.

  The phase error not only causes a decrease in the OnOff ratio in the On path, but also causes an increase in loss in the Off path. This increase in loss is a small amount compared to a decrease in OnOff ratio, and in many cases this is not a big problem, but it becomes a problem in a large-scale switch with a large number of passing switch elements as in this embodiment. In the case of the configuration B, if the upper arm becomes longer due to an orientation-dependent error, for example, ΔL of all the previous-stage MZI switches becomes slightly shorter, and ΔL of all the subsequent-stage MZI switches becomes slightly longer. When ΔL is slightly shorter, the operating wavelength is shifted slightly from the short wave, so that the loss increase in the Off path becomes more remarkable on the long wave side. On the contrary, when ΔL is slightly longer, the increase in loss on the short wave side becomes conspicuous. For example, in the path from the input 2 to the output 8, the columns (1) to (7) pass only through the previous stage MZI switch (off path), and the 2 × 2 switch elements in the column (8) Since both of the latter-stage MZI switches (which are On paths) are passed, in the case of the configuration B, only the increase in the loss on the long wave side is accumulated, and the wavelength dependency of the loss increases.

  On the other hand, in the case of the configuration A, ΔL of the preceding MZI switch 803 of the 2 × 2 switch element 801 in the odd-numbered columns (1), (3), (5), and (7) is slightly shortened due to the orientation dependent error. Even in the even-numbered columns (2), (4), (6), and (8), the ΔL of the preceding MZI switch 804 of the 2 × 2 switch element 802 is slightly longer, and the deviation of ΔL is switched in each column. Therefore, in the path from the input 2 to the output 8, only the increase in loss on the long wave side does not accumulate, and the wavelength dependency of loss is relaxed. As described above, the configuration A in which the short arm arrangement in the preceding stage MZI is switched up and down in the odd-numbered columns and the even-numbered columns has an effect of relaxing the wavelength dependency of the loss due to the azimuth-dependent error in any path.

  This is not a problem peculiar to the N × N matrix switch of the present embodiment, but it is clear that the same applies to the 1 × N tap switch of the first embodiment. In a large 1 × N switch having a large N, it is desirable to incorporate a device for switching the short arm arrangement in the preceding stage MZI upside down in the odd and even columns as in the present embodiment.

  This switch chip was also fabricated on a silicon substrate with a quartz-based waveguide in the same manner as in Example 1. The relative refractive index difference between the core and the clad of the waveguide is 0.75%. The chip size was 13 × 106 mm. Further, the periphery of the thin film heater 809, which is a thermo-optic phase shifter, is deleted by a microfabrication technique to reduce power consumption, and a heat insulating groove 810 is formed. The power consumption at the time of On was about 200 mW per 1 MZI. The insertion loss at On was about 2 dB including the fiber connection loss.

  The OnOff ratio of each double MZI optical switch element was evaluated at the worst value in the operating wavelength range (1520 to 1560 nm) as in Example 1. In addition, a total of 64 double MZI optical switch elements are integrated in the chip. At the time of shipping the chip, the value of the element with the worst characteristics is used as the determination criterion. It was evaluated as the OnOff ratio worst value.

  FIG. 14 shows a summary of OnOff ratio worst value data for 50 chips. FIG. 14 (a) shows the results of this example, FIG. 14 (b) shows the results for a chip with no 2% offset phase added simultaneously for comparison, and FIG. 14 (c) shows the comparison. FIG. 6 is a result of a conventional MZI optical switch element having the same unidirectional arrangement manufactured at the same time. In this embodiment, the operating wavelength range is narrow, and the OnOff ratio worst value barely exceeded 40 dB even in the conventional configuration of FIG. 14C, but the configuration of the present invention is shown in FIGS. In (b), characteristics of 43 dB or more could be obtained in all the chips. Further, in FIG. 14A in which the offset phase is added according to the present embodiment, the worst value of 44 dB or more is obtained. Compared with 43 dB or more in FIG. I was able to improve. Since the narrow operating wavelength range means that the isotropic phase error is equivalently reduced, it can be said that the offset phase addition worked effectively in this embodiment.

[2x2 switch]
FIG. 15 shows the configuration of a high extinction ratio 2 × 2 switch chip 900 manufactured as the third embodiment. The double MZI optical switches 200 and 210 shown in FIG. 2 are two-input two-output switches in which there is no path from the Thr input to the Thr output. However, the optical switch 900 of this embodiment includes four MZI switch elements. The present invention is applied to a 2 × 2 optical switch composed of 901, 902, 903, and 904 and having all input / output combinations.

  Each of the MZI switch elements 901, 902, 903, and 904 is provided with a waveguide length difference corresponding to a half wavelength, and the front MZI switch elements 901 and 902 have short arms 905 and 907 on the upper side and long arms 906 and 908 on the lower side. The rear stage MZI switch elements 903 and 904 have long arms 910 and 912 on the upper side and short arms 909 and 911 on the lower side. In any case, the relative relationship in the vertical arrangement direction of the long arm / short arm of the front-stage MZI switch and the rear-stage MZI switch is the same as in the previous embodiment. As in Example 1, the operating wavelength center λ 0 was set to 1570 nm on the premise of use in the operating wavelength range of 1520 to 1620 nm.

  This switch chip was also fabricated on a silicon substrate with a quartz-based waveguide in the same manner as in Examples 1 and 2. The relative refractive index difference between the core and the clad of the waveguide is 0.75%. The chip size was 5 × 20 mm. This time, no heat insulating groove was formed, and the power consumption when On was about 500 mW per 1 MZI. The insertion loss at On was about 1 dB including the fiber connection loss.

  The cross path (input 1 to output 2 and input 2 to output 1) OnOff ratio is not determined by the phase error of MZI, but mainly by the deviation from the 50% coupling value of the directional coupler. Therefore, the OnOff ratio of only the bar path (input 1 to output 1 and input 2 to output 2) was evaluated at the worst value in the same manner as in Examples 1 and 2, not as evaluation items.

  In the chip of this configuration, an OnOff ratio of 42 dB or more was stably obtained in a plurality of chips, whereas in the chip having a short arm on the upper side of both the front and rear MZI switches manufactured for comparison, 35 dB There were some chips that could only be obtained.

[Multi / demultiplex interleave filter]
In the fourth embodiment, the present invention is applied to a multiplexer / demultiplexer. FIG. 16 shows the configuration of the multiplexer / demultiplexer 1000 of this embodiment. The basic concept of the multiplexer / demultiplexer 1000 is the same as that of the embodiment of the optical switch described above. The front MZI demultiplexing element 1001 has a short arm 1004 on the lower side, and the rear MZI multiplexing / demultiplexing elements 1002 and 1003 are FIG. 4 (b) shows that the upper arms are short arms 1006 and 1008, and the relative relationship in the vertical arrangement direction of the long arm / short arm of the front MZI multiplexer / demultiplexer and the rear MZI multiplexer / demultiplexer is reversed. This is fundamentally different from the multiplexer / demultiplexer 410 having the conventional configuration shown in FIG.

  With the above-described configuration, for the same reason as in the case of the switch, the probability of a reduction in crosstalk characteristics with respect to a phase error due to an isotropic error and an azimuth-dependent error is reduced, and the configuration is strong against manufacturing errors.

  In addition, the operating wavelength is less susceptible to wavelength shift due to manufacturing errors, as will be described below. If, for example, the upper arm becomes longer due to an orientation-dependent error, ΔL of the preceding MZI multiplexer / demultiplexer becomes slightly shorter, and ΔL of the subsequent MZI multiplexer / demultiplexer becomes slightly longer. When ΔL is slightly shorter, the operating wavelength is shifted slightly from the short wave, and when ΔL is slightly longer, the operating wavelength is shifted from the slightly longer wave. Therefore, since the operating wavelength shifts of the front-stage MZI multiplexing / demultiplexing element 1001 and the rear-stage MZI multiplexing / demultiplexing elements 1002 and 1003 cancel each other, the center of the operating wavelength when viewed as a total of the two stages does not shift. On the other hand, in the conventional multiplexer / demultiplexer, the wavelength shift due to the azimuth-dependent error is shifted in the same direction between the preceding MZI multiplexer / demultiplexer and the subsequent MZI multiplexer / demultiplexer, so the influence of the azimuth-dependent error appears as it is. As described above, the configuration of the present embodiment is less susceptible to wavelength shift due to the orientation dependent error.

  In this embodiment, in a two-beam interferometer composed of two arm waveguides, the relative relationship between the upper and lower arrangement directions of the long-arm side / short-arm side of the front-stage multiplexing / demultiplexing element and the rear-stage multiplexing / demultiplexing element is reversed The layout configuration is less susceptible to wavelength shifts due to azimuth-dependent errors, but it is clear that this idea can be obtained by extending to a multi-beam interferometer consisting of many arm waveguides. It is.

  As described above, in the four examples, an optical circuit based on a silica-based waveguide on a silicon substrate has been realized, but this is excellent in reliability, has high connection affinity with an optical fiber, and has been established as a production technology. This is because it is suitable for mass production. However, it should be noted that the effects shown in the present embodiment can be obtained in the same way even in waveguides of other material systems, such as silicon waveguides, LN waveguides, and polymer waveguides. deep.

  In the above examples and embodiments, the directional coupler is used as the coupler constituting the MZI. However, the present invention is not limited to this. For example, a multimode interference (MMI) coupler is used. But of course. Further, in a 1 × 2 coupler or a 2 × 1 coupler, a 1 × 2 branching device or a 2 × 1 merger may be used. However, when these are used together in the same MZI, the phase characteristics are different from those of the directional coupler, so that it is necessary to correct the difference as an optical path length difference. In any case, the present invention still has a configuration in which the influence of the orientation-dependent phase error hardly affects the optical characteristics with respect to the desired optical path length difference design.

  In the above examples and embodiments, a double MZI element, that is, an optical interferometer circuit using a two-stage MZI element has been described. This is because many practical optical circuits use a two-stage element. This is because a sufficient OnOff ratio and low crosstalk can be obtained. However, in applications that require higher characteristics, this is not a limitation, and more stages of elements may be used depending on the required characteristics. In this case, if the MZI element with the short arm on the upper side and the MZI element with the short arm on the lower side are considered as a pair, it is clear that the effects described so far can be obtained. Accordingly, the MZI element with the short arm side on the upper side and the MZI element with the short arm side on the lower side may be arranged between the input and the output, and preferably the upper and lower sides of the long arm / short arm of the MZI element. It can be seen that the layout should be balanced so that the number of arrangement directions is balanced, that is, the difference is 1 when the number of MZI elements is an odd number, and the difference is 0 when the number is an even number.

  It should be noted that the MZI elements to be paired can be regarded as having the same distribution shape of the effective refractive index when they are as close as possible, that is, the error δφbase and the error δφdir have a higher probability of being substantially the same value. . Therefore, the MZI elements with the short arm on the upper side and the MZI elements with the short arm on the lower side are alternately arranged, not only the number of the long arm / short arm in the vertical arrangement direction of the MZI elements in each stage is balanced. Thus, it is more preferable to arrange the MZI elements that form a pair in the vicinity.

  17 and 18 show examples of the arrangement of waveguide type optical interferometer circuits using MZI elements having three or more stages. FIG. 17 shows a configuration of an optical switch 1100 in which four stages of MZI switch elements 1101, 1102, 1103, 1104 having short arms 1105, 1107, 1109, 1111 and long arms 1106, 1108, 1110, 1112 are connected. FIG. 18 is an MZI multiplexing / demultiplexing device 1201 including short arms 1208, 1210, 1212, 1214, 1216, 1218, 1220 and long arms 1209, 1211, 1213, 1215, 1217, 1219, 1221, respectively. It is a figure which shows the structure of the multiplexer / demultiplexer 1200 which connected 4 steps | paragraphs -1207.

It is a figure which shows the structure of the Mach-Zehnder interferometer (MZI) type | mold optical switch which uses a waveguide. It is a figure which shows the structure of the double MZI type | mold optical switch by a prior art. It is a figure which shows the structure of the large-scale integrated optical switch by a prior art. It is a figure which shows the structure of the MZI type | mold multiplexer / demultiplexer which uses the waveguide by a prior art. It is a figure which shows the structure of the double MZI type | mold optical switch as an example of the waveguide type optical interferometer circuit by the 1st Embodiment of this invention. It is a figure which shows the structure of the double MZI type | mold optical switch as an example of the waveguide type optical interferometer circuit by the 2nd Embodiment of this invention. It is a figure which compares and shows the phase error dependence of the transmittance | permeability at the time of Off in the prior art and the 1st and 2nd embodiment of this invention. It is a figure which compares and shows OnOff ratio distribution with respect to the phase error in the prior art and the 1st and 2nd embodiment of this invention. It is a figure which compares and shows OnOff ratio distribution in the case where it is not so with the structure which added the same phase offset by the 3rd Embodiment of this invention. It is a figure which compares and shows OnOff ratio distribution in the case where it is not so with the structure which added the antiphase offset by the 4th Embodiment of this invention. It is a figure which shows the structure of the 16 series 1x4 switch which is a waveguide type optical interferometer circuit of Example 1 of this invention. It is a figure which compares and shows the worst value histogram of OnOff ratio in Example 1 of this invention, and a prior art. It is a figure which shows the structure of the 8x8 matrix switch which is a waveguide type optical interferometer circuit of Example 2 of this invention. It is a figure which compares and shows the worst value histogram of Example 2 of this invention, the case where there is no phase offset, and the OnOff ratio in a prior art. It is a figure which shows the structure of the high extinction ratio 2x2 switch which is a waveguide type optical interferometer circuit of Example 3 of this invention. It is a figure which shows the structure of the multiplexing / demultiplexing interleave filter which is a waveguide type optical interferometer circuit of Example 4 of this invention. It is a figure which shows the structure of the optical switch comprised as an example of the waveguide type | mold optical interferometer circuit by this invention from which MZI element is 3 steps | paragraphs or more. It is a figure which shows the structure of the optical multiplexer / demultiplexer comprised as an example of the waveguide type | mold optical interferometer circuit by this invention in which an MZI element is 3 steps or more.

Explanation of symbols

500, 510, 600, 610 Double MZI type optical switches 501, 511, 601, 611 Pre-stage MZI switch elements 502, 512, 602, 612 Sub-stage MZI switch elements 503, 505, 513, 515, 603, 605, 613, 615 Short side waveguide 504, 506, 514, 516, 604, 606, 614, 616 Long side waveguide

Claims (9)

In a waveguide type optical interferometer circuit in which independent waveguide type optical interferometers are connected in cascade in at least two stages,
The waveguide type optical interferometer has a waveguide provided with a desired optical path length difference,
The at least two stages of the waveguide type optical interferometer, the longer one of the optical paths, and the center line drawn from the input side to the output side of each of the waveguide type optical interferometers, A waveguide-type optical interferometer circuit, characterized in that the other waveguide of the two-stage waveguide-type optical interferometer is arranged in the opposite direction.   The difference between the number of the one waveguide optical interferometer and the number of the waveguide optical interferometers in which the longer waveguide of the other optical path is arranged in the opposite direction is 0 or 1 The waveguide type optical interferometer circuit according to claim 1.   The one waveguide type optical interferometer and the waveguide type optical interferometer in which the longer waveguide of the other optical path is disposed in the opposite direction are configured to be alternately connected. The waveguide type optical interferometer circuit according to claim 1.   2. The waveguide optical interferometer circuit according to claim 1, wherein the optical path length difference value of the waveguide optical interferometer is corrected based on an average in-plane distribution of effective refractive index. .   The waveguide type according to claim 1, wherein the optical path length difference provided in all of the waveguide type optical interferometers is set shorter or longer than the desired design value. Optical interferometer circuit. The optical path length provided in the waveguide type optical interferometer in which the difference between the optical path length provided in the one waveguide type optical interferometer and the longer waveguide of the other optical path are arranged in opposite directions About the difference
2. The waveguide according to claim 1, wherein one of the optical path length differences is set shorter than the desired design value, and the other of the optical path length differences is set longer than the desired design value. Type optical interferometer circuit.   The waveguide optical interferometer is a Mach-Zehnder interferometer having two arm waveguides, and is a waveguide optical switch having a phase shifter in at least one arm waveguide. A waveguide type optical interferometer circuit as described in 1.   The waveguide-type optical interferometer circuit is a large-scale switch formed by connecting a plurality of the waveguide-type optical switches, and the waveguide having the longer optical path is laid out in the first stage of the waveguide-type optical switch. 8. The waveguide type optical interferometer circuit according to claim 7, wherein the waveguide direction optical switch is a waveguide type optical switch that is arranged in an odd row and an even row in the waveguide type optical switch. .   The waveguide type optical interferometer includes an N input M output coupler, an M input L output coupler, and M arm waveguides sandwiched between them, and the length of the k th arm waveguide is L = (k−1). A waveguide-type optical interferometer circuit according to claim 1, wherein the waveguide-type optical interferometer circuit is any one of ΔL + L0 and L0 ≧ 0.

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