JP2009156599A - Sample preparing method and sample preparation apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prepare a planar sample for TEM wherein an observation place is thinned down into a planar form, in a short time. <P>SOLUTION: A sample 2, which contains a mark 2b (observation place) and has a pillar shape, is cut off from a substrate 1 and subsequently rotated by 90°. Thereafter, the back on the side opposite to the surface, to which the mark 2b is arranged of the sample 2, is adhered to the side-end surface of a dummy substrate 9. Subsequently, the part on the side of the back of the sample 2 is cut in parallel with the adhered surface, with the dummy substrate 9 of the sample 2 located at a predetermined depth from the side-end surface of the sample 2 to form a protruding part 2e to the sample 2 so that a predetermined thickness remains from the surface, to which the mark 2b is arranged of the sample 2. Then, the sample 2 is separated from the dummy substrate 9 and adhered to a carrier 6 so that the protruding part 2e of the sample 2 protrudes from the edge of the carrier 6. Thereafter, by having a condensed ion beam 4 irradiated from the direction of the edge of the protruding part 2e of the sample 2, and bu having an observation location formed into a planar membrane shape, a membrane processed surface 2a is formed. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a sample preparation method and a sample preparation apparatus for a transmission electron microscope (TEM), and more particularly, to a sample preparation method and a sample preparation apparatus for preparing a sample with a thinned observation portion. .

  In recent years, observation of defective parts has become indispensable due to the multilayer wiring, miniaturization, and process complexity of semiconductor devices. There is TEM observation as a method of observing a defective portion of a semiconductor device. In TEM observation, it is necessary to prepare a sample in which the observation location is thinned to 0.2 μm or less so that an electron beam can be transmitted. As a method for producing a thinned sample, the following techniques are disclosed.

  For example, in Patent Document 1, (A) a step of identifying a defective portion from the back side of a silicon substrate of a semiconductor integrated circuit, and selectively thinning the silicon substrate in a region including the defective portion, (B) the silicon substrate Forming a groove with a focused ion beam around the rectangular area including the defective portion from the back surface side of the substrate, and forming a small piece including the defective portion in the central portion, (C) obliquely with respect to one side surface of the small piece Irradiating a focused ion beam to separate the small piece, and in the hole of the silicon substrate formed by the groove, tilting the cut small piece toward the side surface; (D) a side surface opposite to the side surface; And (E) irradiating a focused ion beam from the vertical direction to the side surface facing upward to cut into a thin film-like slice including a defective portion. Sample preparation method comprising the steps is disclosed. This method is a method of planarly thinning an observation portion of a sample (a method of producing a planar sample with a thin film thickness between planes).

  Further, in Patent Document 2, the processing surface of the sample material is irradiated with an ion beam to cut out the sample block, the processing surface of the sample block is turned sideways, the sample block is placed on the mounting surface of the sample table, A sample preparation method is disclosed in which a sample block is irradiated with an ion beam to process the sample block into a thin film that is substantially perpendicular to the mounting surface. This method is a method of thinning the observation portion of the sample in a planar manner.

  Further, as a known technique for planarly thinning an observation portion of a sample by a focused ion beam (FIB) microsampling method, there is the following. First, the substrate 1 is grounded at only one point around the target portion to be the sample 2 and the three sides of the rectangular shape around the sample 2 from the normal direction by the FIB 4 with the plane of the sample 2 facing the normal direction. Cutting (forming a groove), tilting the substrate 1 and obliquely cutting the back surface side including the remaining one side of the sample 2 (forming a groove) to separate the sample 2, and the microprobe 3 provided in the FIB apparatus And the cut-out sample 2 are bonded with an adhesive 5 such as tungsten (see FIG. 7A). Next, the microprobe 3 is pulled up, and the sample 2 is moved to the carrier 6 (see FIG. 7B). Next, the sample 2 is fixed to the carrier 6 with an adhesive 7 such as tungsten, and the microprobe 3 and the sample 2 are separated (see FIG. 7C). Next, the carrier is tilted (rotated) so that the plane of the sample 2 is vertical (see FIG. 7D). Then, the sample 2 is thin-film processed (formed with a thin-film processed surface 2a) so that the plane of the observed portion of the sample 2 is thinned by the FIB 4 from the normal direction (see FIG. 7E). The thin film processed surface 2a of the sample 2 thus prepared is irradiated with electrons 8 to perform TEM observation and evaluation (see FIG. 7F).

  Note that Patent Document 3 discloses a method for thinning the observation portion of a sample in a cross-sectional manner (a method for producing a planar sample with a thin film thickness between cross-sections).

JP 2006-343101 A JP 2004-198276 A JP 2002-39926 A

  In Patent Document 1, since a groove is formed by a focused ion beam around a rectangular region and a small piece is separated by irradiating the focused ion beam from an oblique direction, there is a problem that it takes time to separate the small piece. Further, in Patent Document 1, since laser processing or wet etching is performed when thinning from the back side of the silicon substrate, it is necessary to use a laser device or a wet etching device, and there are many transfers of the silicon substrate. There is a problem that it takes more time and effort.

  In Patent Document 2, since the sample block is cut out by irradiating the processed surface of the sample material with an ion beam, there is a problem that it takes time to cut out the sample block. In Patent Document 2, when the cut sample block is placed on the mounting surface of the sample stage, the sample block is trapped and transferred to the tip of the glass probe by static electricity. There is a problem that the risk is high. Furthermore, in Patent Document 2, since the sample block is placed on the mounting surface of the sample stage with the processing surface of the sample block facing sideways, there is a possibility that the sample block does not stick well to the sample stage.

  The known technique based on the microsampling method has a problem that it takes about 240 minutes to cut the sample 2 from the substrate 1 by FIB processing, although a fine region can be aimed at as compared with the milling method. Also in the observation range, the size of the sample 2 lifted by the microprobe 3 is limited to about 10 to 20 μm square. When it is desired to observe a large area (for example, 20 μm square or more), the volume of the sample 2 to be lifted becomes large, so that the sample 2 is lifted up because the microprobe 3 and the sample 2 are not well bonded by the adhesive 5. Otherwise, the sample 2 may be dropped and damaged when it is lifted.

  The main subject of the present invention is to produce a planar sample for TEM in which the observation site is thinned in a short time in a short time.

  In a first aspect of the present invention, there is provided a sample preparation method for preparing a sample for processing a substrate and observing with a transmission electron microscope, the sample including an observation portion from the substrate and having a columnar shape A first step of cutting the sample, a second step of rotating the sample by 90 degrees after the first step, and a surface opposite to the surface of the sample on which the observation site is arranged after the second step A third step of bonding the back surface of the side and the side end surface of the dummy substrate; and after the third step, leaving a predetermined thickness from the surface on which the observation portion of the sample is disposed, A fourth step of forming a protrusion on the sample by cutting a portion on the back side of the sample parallel to the adhesion surface between the sample and the dummy substrate at a predetermined depth from the side end surface of the sample; After the fourth step, the sample is separated from the dummy substrate. After the fifth step, after the fifth step, after the sixth step, the sixth step of bonding the sample to the carrier such that the protruding portion of the sample protrudes from the end face of the carrier, And a seventh step of forming a thin film processed surface by irradiating a focused ion beam from the normal direction of the end surface of the projecting portion of the sample to form a thin film on the observed portion in a plane. To do.

  In a second aspect of the present invention, in the sample preparation apparatus, a dicer for dividing the substrate by cutting, a positioner for aligning the installed substrate, and a heat softening property used for bonding the substrate. A mounting plate having a hot plate for heating the adhesive; a mechanism for grasping a sample cut out from the substrate; and a gripping mechanism having a mechanism for rotating the grasped sample. To do.

  According to the present invention, since the dicer is used without cutting the focused ion beam to cut out the sample from the substrate, the manufacturing time can be shortened. Further, when pulling up the cut sample, it is not necessary to use a microprobe, it is easy to handle, and the sample can be prevented from being damaged. Further, since the sample is larger than the sample of the prior art, a large area planar TEM observation is possible.

  In the embodiment of the present invention, there is provided a sample preparation method for processing a substrate (1 in FIG. 1A) and preparing a sample (2 in FIG. 2) for observation with a transmission electron microscope. A first step of cutting out the sample (2 in FIG. 1 (A)) including the observation location (location with the mark 2b in FIG. 1 (A)) and the columnar shape from 1) in FIG. 1 (A); After the first step, the second step of rotating the sample (2 in FIG. 1B) by 90 degrees and after the second step, the sample (2 in FIG. 1C) A third step of bonding the back surface opposite to the surface on which the observation location is arranged and the side end surface of the dummy substrate (9 in FIG. 1C), and after the third step, the sample ( The sample (FIG. 1D) is left so as to leave a predetermined thickness from the surface on which the observation location (2) in FIG. 1 (D) (where the mark 2b in FIG. 1 (D) is provided). The sample (D) is parallel to the bonding surface between the sample (2 in FIG. 1D) and the dummy substrate (9 in FIG. 1D) at a predetermined depth from the side end surface of 2) in (D). A fourth step of forming a protruding portion (2e in FIG. 1D) on the sample (2 in FIG. 1D) by cutting the back side portion of 2) in FIG. 1D; After the fourth step, a fifth step of separating the sample (2 in FIG. 1 (E)) from the dummy substrate (9 in FIG. 1 (E)), and after the fifth step, The protrusion (2e in FIG. 1 (F)) of the sample (FIG. 1 (F) 2) protrudes from the end face of the carrier (6 in FIG. 1 (F)), and the sample (FIG. 1 (F) ) 2) to the carrier (6 in FIG. 1 (F)), and after the sixth step, the protrusion (2e in FIG. 2) of the sample (2 in FIG. 2). ) From the normal direction of the end face By irradiating an ion beam (4 in FIG. 2); and a seventh step of forming a thin film processing surface (2a in FIG. 2) by a planar manner thinning the observation point.

  A sample preparation method according to Example 1 of the present invention will be described with reference to the drawings. FIG. 1 is a process perspective view schematically showing a sample preparation method according to Example 1 of the present invention. FIG. 2 is a perspective view schematically showing a thinning process of the sample manufacturing method according to Example 1 of the present invention.

  The sample preparation method according to Example 1 is a method of preparing a sample 2 for TEM, and is a method of thinning the observation part of the sample 2 in a plane (XY plane). Sample 2 is cut from substrate 1 such as a semiconductor device. The sample preparation method according to Example 1 is performed as follows.

  First, when a defective part in the substrate 1 is detected using a known defective part detection device (not shown) such as the OBIRCH method and the position of the defective part is specified, the planar position of the defective part is indicated by a laser or the like. A mark 2b is applied to the surface of the substrate 1 (see FIG. 1A). The application of the mark 2b can be omitted if the position of the defective portion can be confirmed from the surface of the sample 2 in the FIB apparatus.

  Next, using a dicer (not shown), the substrate 1 is cut so as to include the mark 2b in the sample 2, and the square columnar sample 2 is cut out from the substrate 1 (see FIG. 1A). At this time, the width (length in the X-axis direction) of the sample 2 is preferably the same as the thickness Dmm (length in the Z-axis direction) of the substrate 1. This is to correspond to the thickness of the dummy substrate (9 in FIG. 1C). The planar shape of the cut sample 2 is a rectangular shape (strip shape) in which the Y-axis direction is the longitudinal direction and the X-axis direction is the short direction.

  Next, the cut out sample 2 is taken out, and the sample 2 is rotated 90 degrees so that the surface to which the mark 2b is provided is directed to the side (right side in the figure) (see FIG. 1B).

  Next, the sample 2 is attached to the dummy substrate 9 so that the back surface of the sample 2 (the surface opposite to the mark application surface) is in contact with the side end surface of the dummy substrate 9 (see FIG. 1C). The thickness of the dummy substrate 9 is preferably the same as the thickness Dmm of the substrate 1. This is because the subsequent cutting is accurately performed so that no step is generated between the sample 2 and the dummy substrate 9.

  Next, by using a dicer (not shown), a predetermined thickness (for example, 10 to 30 μm, preferably 20 μm) is left from the surface (marked surface) of the sample 2, and the back surface of the sample 2 (affixed) (Surface) side portion is cut from the side end surface of the sample 2 at a predetermined depth (at least beyond the mark 2b portion) in the Y-axis direction (parallel to the bonding surface between the sample 2 and the dummy substrate 6) (see FIG. 1 (D)). Thereby, the part by the side of the surface (mark giving surface) of the sample 2 becomes the protrusion part 2e. Note that when the sample 2 is cut, the dummy substrate 9 may be cut.

  Next, the sample 2 is separated from the dummy substrate 9 by cutting in the Y-axis direction so that the dummy substrate 9 and the sample 2 are separated using a dicer (not shown) (see FIG. 1E).

  Next, the cut surface of the sample 2 (marking surface) is in contact with the plane of the carrier 6 (C ring or the like), and the protruding portion 2e of the sample 2 protrudes from the upper end surface of the carrier 6, so that the sample 2 is moved to the carrier 6 (Refer to FIG. 1F).

  Then, by using the FIB apparatus, the FIB 4 is irradiated on the projecting portion 2e of the sample 2 from the normal direction (vertical direction) of the upper end surface (side end surface of the observation site), so that an electron beam is observed during TEM observation. The observation portion (mark 2b in FIG. 1 (F)) of the sample 2 is thinned in a planar manner so as to have a transmitting thickness (for example, 0.2 μm), and a thin film processed surface 2a is formed on the XY plane (FIG. 2). To thin the observation portion (the mark 2b in FIG. 1F) in a plane is to reduce the film thickness between the front and back surfaces of the observation portion. The thin film processed surface 2a of the sample 2 thus prepared is irradiated with electrons to perform TEM observation / evaluation.

  Next, a sample preparation apparatus used in the sample preparation method according to Example 1 of the present invention will be described with reference to the drawings. FIG. 3 is a schematic diagram showing the configuration of a sample preparation apparatus used in the sample preparation method according to Example 1 of the present invention.

  The sample preparation apparatus 20 is an apparatus used in the processes from cutting out the sample 2 from the substrate 1 in FIG. 1 (see FIG. 1A) to attaching the sample 2 to the carrier 6 (see FIG. 1F). is there. The sample preparation device 20 includes a dicer 21, an installation table 22, and a gripping mechanism 23.

  The dicer 21 is a device that divides the substrate 1 by cutting. The dicer 21 has a spindle (not shown) for rotating the cutter and a mechanism for moving the cutter.

  The installation table 22 is a table for installing the substrate 1 (another cutting object). The installation table 22 has a built-in positioner 22a for aligning the substrate 1. The installation table 22 includes a hot plate 22 b that heats a thermosoftening adhesive used for bonding the substrate 1. When the substrate 1 is attached to the installation table 22, the hot plate 22b is heated to soften the adhesive and the substrate 1 is applied to the installation table 22. Then, the heating of the hot plate 22b is stopped to cure the adhesive. The substrate 1 is fixed to the installation table 22. The hot plate 22b is similarly used when the sample 2 is attached to the dummy substrate 9 as shown in FIG. 1C or when the sample 2 is attached to the carrier 6 as shown in FIG.

  The gripping mechanism 23 is a mechanism for picking up a sample cut out from the substrate 1 (2 in FIG. 1B). The gripping mechanism 23 has a mechanism for grasping and rotating the sample 2 as shown in FIG.

  According to the sample manufacturing method according to Example 1, since the dicer is used without cutting out the FIB to cut out the sample 2 from the substrate 1, the manufacturing time can be shortened. Moreover, when pulling up the cut sample 2, it is not necessary to use a microprobe (3 in FIG. 7), the handling is easy, and damage to the sample 2 can be prevented. In addition, since the sample 2 is larger than the sample of the prior art, a large area planar TEM observation is possible.

  According to the sample preparation apparatus 20 according to the first embodiment, the process from the cutting of the sample 2 from the substrate 1 (see FIG. 1A) to the separation of the dummy substrate 9 and the sample 2 (see FIG. 1E). The sample 2 can be efficiently produced without moving (transporting) the substrate 1.

  A sample preparation method according to Example 2 of the present invention will be described with reference to the drawings. FIG. 4 is a process perspective view schematically showing a sample preparation method according to Example 2 of the present invention.

  In the sample preparation method according to Example 2, as a result of TEM observation of the plane (XY plane) of the observation portion of the sample 2 prepared by the sample preparation method according to Example 1, it is desired to observe the cross section (YZ plane) of the observation portion by TEM. In this case, the YZ plane at the observation location of the sample 2 is thinned. For the case of TEM observation of the XZ plane at the observation location, see Example 3. The sample preparation method according to Example 2 is performed as follows.

  First, the side surface (step side surface) of the protrusion 2e of the sample (2 in FIG. 2; separated from the carrier 6) manufactured by the sample manufacturing method according to Example 1 is in contact with the plane of the dummy substrate 10. Then, the sample 2 is attached to the dummy substrate 10 (see FIG. 4A).

  Next, using a dicer (not shown), the dummy substrate 10 and the sample 2 are removed so that the dummy substrate 10 and the sample 2 on both outer sides in the X-axis direction of the thin film processed surface 2a (XY surface) of the sample 2 are removed. The assembly of the sample 2 is cut in the Y-axis direction (parallel to the end surface of the protruding portion 2e of the sample 2), and the assembly of the sample 2 and the dummy substrate 10 including the thin film processed surface 2a is cut out (see FIG. 4B). ). Here, the thin film processed surface 2a is not cut.

  Next, the YZ surface of the assembly of the sample 2 and the dummy substrate 10 including the cut-out thin film processed surface 2a is in contact with the plane of the carrier 6 (C ring or the like) and the sample 2 protrudes from the upper end surface of the carrier 6. The assembly is attached to the carrier 6 (see FIG. 4C).

  Then, by irradiating the FIB 4 from the normal direction of the thin film processed surface 2a of the sample 2 using an FIB apparatus, the observation location of the sample 2 is set so that the electron beam is transmitted through the TEM observation. A thin film is formed in a cross-sectional view (YZ plane; parallel to the end face of the protruding portion 2e of the sample 2) to form a thin film processed surface 2c (see FIG. 4C). Making the observation part thin in a cross-sectional view (YZ plane) means reducing the film thickness between the cross sections parallel to the end face of the protruding portion 2e of the sample 2 at the observation part. The thin film processed surface 2c of the sample 2 thus prepared is irradiated with electrons to perform TEM observation / evaluation.

  According to Example 2, the thin film processed surface 2c can be formed without damaging the thin film processed surface 2a of the sample 2, and TEM observation / evaluation can be performed in a multifaceted manner.

  A sample preparation method according to Example 3 of the present invention will be described with reference to the drawings. 5 and 6 are process perspective views schematically showing a sample preparation method according to Example 3 of the present invention.

  In the sample preparation method according to Example 3, as a result of TEM observation of the plane (XY plane) of the observation location of the sample 2 manufactured by the sample preparation method according to Example 1, it is desired to observe the cross section (XZ plane) of the observation location by TEM In this case, the XZ plane at the observation location of the sample 2 is thinned. For the case of TEM observation of the YZ plane at the observation location, see Example 2. The sample preparation method according to Example 3 is performed as follows.

  First, the sample 2 is affixed to the dummy substrate 10 such that the side surface (step side surface) of the protruding portion 2e of the sample 2 manufactured by the sample manufacturing method according to Example 1 is in contact with the plane of the dummy substrate 10 (see FIG. 5 (A)).

  Next, using a dicer (not shown), the dummy substrate 10 and the sample 2 are removed so that the dummy substrate 10 and the sample 2 on both outer sides in the X-axis direction of the thin film processed surface 2a (XY surface) of the sample 2 are removed. The assembly of the sample 2 is cut in the Y-axis direction (parallel to the end surface of the protruding portion 2e of the sample 2) to cut out the assembly of the sample 2 including the thin film processed surface 2a and the dummy substrate 10 (see FIG. 5B). ). Here, the thin film processed surface 2a is not cut. The cutting in the Y-axis direction here may be omitted.

  Next, using a dicer (not shown), the dummy substrate 10 and the sample 2 are removed so as to remove the extra dummy substrate 10 and the sample 2 on both outer sides in the Y-axis direction of the thin film processed surface 2a (XY plane) of the sample 2. The assembly of the sample 2 is cut in the X-axis direction (perpendicular to the end surface of the protruding portion 2e of the substrate 2) to cut out the assembly of the sample 2 and the dummy substrate 10 including the thin film processed surface 2a (see FIG. 6A). ). Here, the thin film processed surface 2a is not cut.

  Next, the XZ plane of the assembly of the sample 2 and the dummy substrate 10 including the cut thin film processed surface 2a is in contact with the plane of the carrier 6 (C ring or the like), and the sample 2 protrudes from the upper end surface of the carrier 6. The assembly is attached to the carrier 6 (see FIG. 6B).

  Then, by irradiating the FIB 4 from the normal direction of the thin film processed surface 2a of the sample 2 using an FIB apparatus, the observation location of the sample 2 is set so that the electron beam is transmitted through the TEM observation. A thin film is formed in a cross section (XZ plane; perpendicular to the end face of the projecting portion 2e of the sample 2) to form a thin film processed surface 2d (see FIG. 6B). Making the observation location thin in a cross-sectional view (XZ plane) means reducing the film thickness between the cross sections perpendicular to the end face of the protruding portion 2e of the sample 2 at the observation location. The thin film processed surface 2d of the sample 2 thus prepared is irradiated with electrons to perform TEM observation / evaluation.

  According to Example 3, the thin film processed surface 2d can be formed without damaging the thin film processed surface 2a of the sample 2, and TEM observation / evaluation can be performed in a multifaceted manner.

It is the process perspective view which showed typically the sample preparation method which concerns on Example 1 of this invention. It is the perspective view which showed typically the thin film formation process of the sample preparation method which concerns on Example 1 of this invention. It is the schematic diagram which showed the structure of the sample preparation apparatus used with the sample preparation method which concerns on Example 1 of this invention. It is the process perspective view which showed typically the sample preparation method which concerns on Example 2 of this invention. It is the 1st process perspective view showing typically the sample preparation method concerning Example 3 of the present invention. It is the 2nd process perspective view showing typically the sample preparation method concerning Example 3 of the present invention. It is the process perspective view which showed the sample preparation method concerning a prior art example typically.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Board | substrate 2 Sample 2a, 2c, 2d Thin film processed surface 2b Mark 2e Protrusion part 3 Microprobe 4 FIB (focused ion beam)
DESCRIPTION OF SYMBOLS 5 Adhesive 6 Carrier 7 Adhesive 8 Electron 9, 10 Dummy board 20 Sample preparation apparatus 21 Dicer 22 Installation stand 22a Positioner 22b Hot plate 23 Grip mechanism

Claims (11)

A sample preparation method for preparing a sample for processing a substrate and observing with a transmission electron microscope,
A first step of cutting out the sample including the observation portion from the substrate and having a columnar shape;
A second step of rotating the sample 90 degrees after the first step;
After the second step, a third step of bonding the back surface of the sample opposite to the surface on which the observation location is arranged and the side end surface of the dummy substrate;
After the third step, the sample and the dummy substrate are placed at a predetermined depth from the side end surface of the sample so as to leave a predetermined thickness from the surface on which the observation portion of the sample is disposed. A fourth step of forming a protrusion on the sample by cutting a portion on the back side of the sample in parallel with the adhesive surface;
A fifth step of separating the sample from the dummy substrate after the fourth step;
After the fifth step, a sixth step of bonding the sample to the carrier such that the protruding portion of the sample protrudes from the end surface of the carrier;
After the sixth step, a seventh step of forming a thin film processed surface by irradiating a focused ion beam from the normal direction of the end surface of the projecting portion of the sample to form a thin film on the observation portion in a plane. When,
A method for preparing a sample, comprising:   The sample preparation method according to claim 1, wherein the width of the sample cut out in the first step is the same as the thickness of the substrate.   3. The sample preparation method according to claim 1, wherein, in the fourth step, a predetermined thickness is 10 μm or more and 30 μm or less from a surface on which the observation portion of the sample is arranged.   4. The sample preparation method according to claim 1, wherein, in the fourth step, a predetermined depth from a side end surface of the sample is a depth exceeding at least the observation location. 5.   In the cutting out of the sample in the first step, the formation of the protruding portion of the sample in the fourth step, and the separation of the sample and the dummy substrate in the fifth step, a dicer is used. The sample preparation method according to claim 1, wherein the sample preparation method is used.   The sample preparation method according to any one of claims 1 to 5, wherein the first to sixth steps are performed in one apparatus. After the seventh step, an eighth step of bonding the side surface of the protruding portion of the sample separated from the carrier and the plane of the second dummy substrate;
After the eighth step, the sample in a region other than the thin film processed surface and a part of the second dummy substrate are cut in parallel with the end surface of the projecting portion of the sample to include the thin film processed surface. A ninth step of cutting out the assembly of the sample and the second dummy substrate;
After the ninth step, a tenth step of bonding the assembly to the second carrier such that the sample protrudes from the end surface of the second carrier;
After the tenth step, the second thin film processing is performed by irradiating a focused ion beam from the normal direction of the thin film processing surface of the sample to form a thin film parallel to the end surface of the protruding portion of the sample at the observation location. An eleventh step of forming a surface;
The sample preparation method according to claim 1, comprising:   The sample preparation method according to claim 7, wherein the cutting of the assembly in the ninth step is performed using a dicer. After the seventh step, a twelfth step of bonding the side surface of the protruding portion of the sample separated from the carrier and the plane of the third dummy substrate;
After the twelfth step, the sample in a region other than the thin film processed surface and a part of the third dummy substrate are cut at right angles to an end surface of the projecting portion of the sample to include the thin film processed surface. A thirteenth step of cutting out the assembly of the sample and the third dummy substrate;
After the thirteenth step, a fourteenth step of bonding the assembly to the third carrier such that the sample protrudes from the end face of the third carrier;
After the fourteenth step, the third thin film processing is performed by irradiating a focused ion beam from the normal direction of the thin film processing surface of the sample to form a thin film perpendicular to the end surface of the protruding portion of the sample at the observation location. A fifteenth step of forming a surface;
The sample preparation method according to claim 1, comprising:   The sample preparation method according to claim 9, wherein the cutting of the assembly in the thirteenth step is performed using a dicer. A dicer that divides the substrate by cutting;
An installation table having a positioner for aligning the installed substrate, and a hot plate for heating a thermosoftening adhesive used for bonding the substrate;
A mechanism for grasping the sample cut out from the substrate, a gripping mechanism having a mechanism for rotating the grasped sample,
A sample preparation apparatus comprising:

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