JP2009152484A - Power protection circuit and integrated circuit - Google Patents

Power protection circuit and integrated circuit Download PDF

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JP2009152484A
JP2009152484A JP2007330779A JP2007330779A JP2009152484A JP 2009152484 A JP2009152484 A JP 2009152484A JP 2007330779 A JP2007330779 A JP 2007330779A JP 2007330779 A JP2007330779 A JP 2007330779A JP 2009152484 A JP2009152484 A JP 2009152484A
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power supply
circuit
power
protection
transistor
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Tooru Ichiyama
徹 市山
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Fujifilm Corp
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<P>PROBLEM TO BE SOLVED: To provide a power protection circuit which operates for a surge voltage by static electricity and does not operate for a usual spike noise on the power supply. <P>SOLUTION: The power supply protective circuit, which is provided between a power terminal 1 to which power voltage is applied, and a protective target circuit 2 which is connected to the power terminal 1, includes: two capacitors C1 and C2 which are connected in series between the power terminal 1 and a ground; a protective transistor TR1 in which a source and a drain are connected between the power terminal 1 and the ground, and a gate is connected to a connection point A between the capacitors C1 and C2; and bias means (4, TR2) which apply bias voltage to the connection point A. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、IC(集積回路)等の保護対象回路の電源接続部に設ける電源保護回路に関する。   The present invention relates to a power supply protection circuit provided in a power supply connection portion of a protection target circuit such as an IC (integrated circuit).

図3は、従来の電源保護回路を搭載したICの回路図である。この電源保護回路は、2つのキャパシタC1,C1と1つのトランジスタTR1とで構成され、外部電源に接続される電源端子1と、図示しない内部回路(保護対象回路)2との間に設けられる。   FIG. 3 is a circuit diagram of an IC equipped with a conventional power protection circuit. This power supply protection circuit includes two capacitors C1 and C1 and one transistor TR1, and is provided between a power supply terminal 1 connected to an external power supply and an internal circuit (protection target circuit) 2 (not shown).

2つのキャパシタC1,C2は、電源端子1と内部回路2との間の接続線3とアース(グランド)との間に直列に接続され、トランジスタTR1は、そのゲートがキャパシタC1,C2間の接続点Aに接続され、接続線3とアースとの間にソース,ドレインが接続される。   The two capacitors C1 and C2 are connected in series between the connection line 3 between the power supply terminal 1 and the internal circuit 2 and the ground (ground), and the gate of the transistor TR1 is connected between the capacitors C1 and C2. Connected to the point A, the source and drain are connected between the connection line 3 and the ground.

この電源保護回路は、部品であるICを、例えばデジタルカメラ等の基板に組み付けるときに機能する様に構成され、組み付け時に静電気によるサージ電圧が電源端子1から内部回路2に伝わって内部回路2が破壊されないようにキャパシタC1,C2の容量比を決める。即ち、この容量比で決まる揺れ以上の電圧変動があったときトランジスタTR1が導通し、保護対象回路2側に過大なサージ電圧が印加されない構成としている。   This power protection circuit is configured to function when an IC, which is a component, is assembled to a substrate such as a digital camera, for example. During assembly, a surge voltage due to static electricity is transmitted from the power supply terminal 1 to the internal circuit 2 so that the internal circuit 2 The capacitance ratio of the capacitors C1 and C2 is determined so as not to be destroyed. That is, the transistor TR1 is turned on when there is a voltage fluctuation exceeding the fluctuation determined by this capacitance ratio, and an excessive surge voltage is not applied to the protection target circuit 2 side.

尚、従来技術に関する電源保護回路として、例えば下記特許文献1記載のものがある。   As a power protection circuit related to the prior art, for example, there is one described in Patent Document 1 below.

特開2004―22950号公報Japanese Patent Laid-Open No. 2004-22950

上述した電源保護回路は、電源端子から見た容量C1,C2が大きく、電源端子に接続する保護回路として好適な構成になっている。しかし、電源投入時や、駆動中の電源に乗る通常のスパイクノイズに対しても保護用のトランジスタTR1が導通してしまう可能性がある。内部回路2は、通常発生するスパイクノイズ程度では破壊されない構造に設計されているため、スパイクノイズが内部回路に入っても問題はなく、トランジスタTR1が導通して内部回路2に電源電圧が供給されなくなることの方が問題となる。   The power supply protection circuit described above has large capacitances C1 and C2 as viewed from the power supply terminal, and has a configuration suitable as a protection circuit connected to the power supply terminal. However, there is a possibility that the protection transistor TR1 is turned on even when the power is turned on or normal spike noise on the driving power supply. Since the internal circuit 2 is designed to have a structure that is not destroyed by the level of spike noise that is normally generated, there is no problem even if spike noise enters the internal circuit, and the transistor TR1 is turned on and the power supply voltage is supplied to the internal circuit 2. The problem is that it disappears.

つまり、電源保護回路は、ICを装置に組み付けた後は、トランジスタTR1が絶対に導通しない構成にする必要があり、組み付け時に発生する可能性がある過大なサージ電圧に対してはトランジスタTR1が導通し、組み付けた後に発生するスパイクノイズ程度の電圧が印加されてもトランジスタTR1が導通しない構成にする必要がある。   In other words, the power supply protection circuit needs to be configured so that the transistor TR1 is never conductive after the IC is assembled to the device, and the transistor TR1 is conductive against an excessive surge voltage that may occur during the assembly. However, it is necessary that the transistor TR1 does not conduct even when a voltage of spike noise generated after assembly is applied.

しかしながら、従来の電源保護回路は、ICを装置に組み付けた後の電源投入時やスパイクノイズ発生時にも保護用トランジスタTR1が導通してしまう可能性があり、この電源保護回路をIC等に適用するのが困難であるという問題がある。   However, in the conventional power protection circuit, there is a possibility that the protection transistor TR1 becomes conductive even when the power is turned on after the IC is assembled to the device or when spike noise occurs, and this power protection circuit is applied to the IC or the like. There is a problem that it is difficult.

本発明の目的は、静電気に起因する過大なサージ電圧に対して保護動作するトランジスタが通常のスパイクノイズ程度では動作しない構成を持つ電源保護回路とこの電源保護回路を備える集積回路を提供することにある。   SUMMARY OF THE INVENTION An object of the present invention is to provide a power protection circuit having a configuration in which a transistor that operates to protect against an excessive surge voltage caused by static electricity does not operate at a normal spike noise level, and an integrated circuit including the power protection circuit. is there.

本発明の電源保護回路は、電源電圧が印加される電源端子と該電源端子に接続される保護対象回路との間に設けられる電源保護回路において、前記電源端子とアースとの間に直列に接続される2つのキャパシタと、前記電源端子とアースとの間にソース,ドレインが接続されゲートが前記2つのキャパシタ間の接続点に接続される保護用トランジスタと、前記接続点にバイアス電圧を印加するバイアス手段とを備えることを特徴とする。   The power protection circuit of the present invention is a power protection circuit provided between a power supply terminal to which a power supply voltage is applied and a protection target circuit connected to the power supply terminal, and is connected in series between the power supply terminal and the ground. Two capacitors, a protection transistor whose source and drain are connected between the power supply terminal and ground, and whose gate is connected to a connection point between the two capacitors, and a bias voltage is applied to the connection point And bias means.

本発明の電源保護回路の前記バイアス手段は、前記電源電圧の投入と連動して立ち上がり所定電圧を発生させるバイアス回路と、前記接続点とアースとの間にソース,ドレインが接続されゲートに前記所定電圧が印加されるバイアス用トランジスタとを備えることを特徴とする。   The bias means of the power supply protection circuit of the present invention includes a bias circuit that rises in conjunction with the supply of the power supply voltage and generates a predetermined voltage, and a source and drain connected between the connection point and ground, and the predetermined gate is connected to the predetermined circuit And a biasing transistor to which a voltage is applied.

本発明の電源保護回路は、前記接続点と前記保護用トランジスタのゲートとの間にローパスフィルタを設けたことを特徴とする。   The power protection circuit of the present invention is characterized in that a low-pass filter is provided between the connection point and the gate of the protection transistor.

本発明の集積回路は、外部電源に接続される前記電源端子と内部の前記保護対象回路との間に上記のいずれかに記載の電源保護回路が形成されたことを特徴とする。   The integrated circuit according to the present invention is characterized in that any one of the power protection circuits described above is formed between the power supply terminal connected to an external power supply and the protection target circuit inside.

本発明によれば、静電気によって発生する過大なサージ電圧に対しては確実に動作し、電源に乗る通常のスパイクノイズ程度では動作しない電源保護回路を提供することが可能となる。   According to the present invention, it is possible to provide a power supply protection circuit that operates reliably against an excessive surge voltage generated by static electricity and does not operate with a level of normal spike noise on the power supply.

以下、本発明の一実施形態について、図面を参照して説明する。   Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

図1は、本発明の第1実施形態に係る電源保護回路の回路図である。この電源保護回路は、IC内部に形成され、電源端子1と、保護対象回路2との間に設けられる。図3に示す回路構成と同様に、電源端子1と保護対象回路2との間を接続する接続線3と、アースとの間に、直列接続された2つのキャパシタC1,C2を備える。また、キャパシタC1,C2間の接続点Aがゲートに接続され、接続線3とアースとの間にソース,ドレインが接続された保護用の第1トランジスタTR1を備える。   FIG. 1 is a circuit diagram of a power protection circuit according to the first embodiment of the present invention. This power protection circuit is formed inside the IC and is provided between the power terminal 1 and the protection target circuit 2. Similar to the circuit configuration shown in FIG. 3, two capacitors C1 and C2 connected in series are provided between the connection line 3 connecting the power supply terminal 1 and the protection target circuit 2 and the ground. In addition, a protection first transistor TR1 having a connection point A between the capacitors C1 and C2 is connected to the gate, and a source and a drain are connected between the connection line 3 and the ground.

更に、本実施形態の電源保護回路は、電源投入時に電源投入と連動して立ち上がるバイアス回路4と、バイアス回路4から供給される所定電圧がゲートに印加されるバイアス用の第2トランジスタTR2とを備える。第2トランジスタTRは、接続点Aとアースとの間にソース,ドレインが接続される。   Further, the power protection circuit of the present embodiment includes a bias circuit 4 that rises in conjunction with power-on when power is turned on, and a bias second transistor TR2 to which a predetermined voltage supplied from the bias circuit 4 is applied to the gate. Prepare. The source and drain of the second transistor TR are connected between the connection point A and the ground.

斯かる構成の電源保護回路では、ICを装置に組み付ける場合にサージ電圧が電源端子1から入り込んでも、キャパシタC1,C2の容量比〔C1/(C1+C2)〕で決まるサージ電圧の交流成分電圧が保護用の第1トランジスタTR1のゲートに印加されて第1トランジスタTR1が導通するため、サージ電圧はアース側に流れ、保護対象回路2が過大なサージ電圧で破壊されることはない。   In the power supply protection circuit having such a configuration, even when a surge voltage enters from the power supply terminal 1 when the IC is assembled to the device, the AC component voltage of the surge voltage determined by the capacitance ratio [C1 / (C1 + C2)] of the capacitors C1 and C2 is protected. Since the first transistor TR1 is turned on by being applied to the gate of the first transistor TR1, the surge voltage flows to the ground side, and the protection target circuit 2 is not destroyed by the excessive surge voltage.

このICを装置に組み付けた後に、電源を投入した場合、電源投入と連動してバイアス回路4が立ち上がり、バイアス回路4から供給される所定電圧が第2トランジスタTR2のゲートに印加される。   When the power is turned on after the IC is assembled to the device, the bias circuit 4 starts up in conjunction with the power on, and a predetermined voltage supplied from the bias circuit 4 is applied to the gate of the second transistor TR2.

これにより、電源投入と同時に第2トランジスタTR2が導通して保護用の第1トランジスタTR1のゲートをアースに接続し、第1トランジスタTR1のゲートは、トランジスタTR1を導通させないバイアス電圧に固定される。   As a result, the second transistor TR2 becomes conductive at the same time as the power is turned on, and the gate of the first transistor TR1 for protection is connected to the ground, and the gate of the first transistor TR1 is fixed to a bias voltage that does not make the transistor TR1 conductive.

このとき、電源端子1にスパイクノイズ等が加わって電源端子電圧が揺らいでも、キャパシタC1の接続点Aの電位がトランジスタTR2によって固定電圧に保たれているため、保護用トランジスタTR1のゲート電圧は揺らぐことはなく、保護用トランジスタTR1が通常のスパイクノイズ程度で導通することはない。   At this time, even if spike noise or the like is applied to the power supply terminal 1 and the power supply terminal voltage fluctuates, the gate voltage of the protection transistor TR1 fluctuates because the potential at the connection point A of the capacitor C1 is maintained at a fixed voltage by the transistor TR2. In other words, the protection transistor TR1 does not conduct with the normal spike noise.

図2は、本発明の第2実施形態に係る電源保護回路の回路図である。本実施形態の電源保護回路は、図1に示す第1実施形態に係る電源保護回路の構成に加え、抵抗R1とキャパシタC3で構成されるローパスフィルタを付加した点が異なる。   FIG. 2 is a circuit diagram of a power protection circuit according to the second embodiment of the present invention. The power supply protection circuit according to the present embodiment is different from the power supply protection circuit according to the first embodiment shown in FIG. 1 in that a low-pass filter including a resistor R1 and a capacitor C3 is added.

即ち、本実施形態の電源保護回路は、キャパシタC1,C2の接続点Aと、保護用の第1トランジスタTR1のゲートとの間を抵抗R1で接続し、このゲートとアースとの間をキャパシタC3で接続した構成としている。   That is, in the power supply protection circuit of this embodiment, the connection point A between the capacitors C1 and C2 and the gate of the first transistor TR1 for protection are connected by the resistor R1, and the capacitor C3 is connected between the gate and the ground. It is set as the structure connected by.

この様に、ローパスフィルタ(R1,C3)を接続点Aと保護用トランジスタTR1のゲートとの間に挿入することで、ICを装置に組み付けている最中にサージ電圧が電源端子1から入ってきたとき、保護用トランジスタTR1の導通している期間(オン期間)を図1の実施形態に比較して長めにとることが可能となる。   In this way, by inserting the low-pass filter (R1, C3) between the connection point A and the gate of the protection transistor TR1, a surge voltage enters from the power supply terminal 1 while the IC is assembled to the device. When this occurs, the period during which the protection transistor TR1 is conducting (on period) can be made longer than in the embodiment of FIG.

これにより、図1の実施形態に比較してアース側に逃がすサージ電圧を少しでも多くすることが可能となり、ICのサージ電圧耐性を高めることができる。   This makes it possible to increase as much as possible the surge voltage that escapes to the ground side as compared with the embodiment of FIG. 1, and to improve the surge voltage resistance of the IC.

以上述べた実施形態によれば、電源のノイズ性能を無視して電源保護回路を設計することが可能となる。また、これと共に、保護用トランジスタTR1が導通する電圧を低く設定でき、これにより応答性を従来より速めることが可能となるので、内部の電圧上昇を低く抑えることも可能となる。   According to the embodiment described above, it is possible to design a power supply protection circuit ignoring the noise performance of the power supply. At the same time, the voltage at which the protective transistor TR1 is turned on can be set low, which makes it possible to speed up the response compared to the prior art, so that the internal voltage rise can be kept low.

本発明に係る電源保護回路は、保護対象回路が静電気によるサージ電圧によって破壊されるのを回避できると共に保護用トランジスタがこのサージ電圧以外のノイズ電圧等で誤動作することを回避できるため、IC等の電源端子部分に形成する電源保護回路として有用である。   The power supply protection circuit according to the present invention can prevent the circuit to be protected from being destroyed by a surge voltage due to static electricity and can prevent the protection transistor from malfunctioning with a noise voltage other than the surge voltage. This is useful as a power protection circuit formed in the power terminal portion.

本発明の第1実施形態に係る電源保護回路の回路図である。1 is a circuit diagram of a power supply protection circuit according to a first embodiment of the present invention. 本発明の第2実施形態に係る電源保護回路の回路図である。It is a circuit diagram of the power supply protection circuit which concerns on 2nd Embodiment of this invention. 従来の電源保護回路の回路図である。It is a circuit diagram of the conventional power supply protection circuit.

符号の説明Explanation of symbols

1 電源端子
2 内部回路(保護対象回路)
3 接続線
4 バイアス回路
A 接続点
TR1 保護用の第1トランジスタ
TR2 第2トランジスタ
C1,C2,C3 キャパシタ
R1 抵抗
1 Power supply terminal 2 Internal circuit (Protection target circuit)
3 Connection line 4 Bias circuit A Connection point TR1 First transistor TR2 for protection Second transistor C1, C2, C3 Capacitor R1 Resistance

Claims (4)

電源電圧が印加される電源端子と該電源端子に接続される保護対象回路との間に設けられる電源保護回路において、前記電源端子とアースとの間に直列に接続される2つのキャパシタと、前記電源端子とアースとの間にソース,ドレインが接続されゲートが前記2つのキャパシタ間の接続点に接続される保護用トランジスタと、前記接続点にバイアス電圧を印加するバイアス手段とを備えることを特徴とする電源保護回路。   In a power supply protection circuit provided between a power supply terminal to which a power supply voltage is applied and a protection target circuit connected to the power supply terminal, two capacitors connected in series between the power supply terminal and the ground, A protection transistor having a source and a drain connected between a power supply terminal and ground and a gate connected to a connection point between the two capacitors, and bias means for applying a bias voltage to the connection point are provided. Power protection circuit. 前記バイアス手段は、前記電源電圧の投入と連動して立ち上がり所定電圧を発生させるバイアス回路と、前記接続点とアースとの間にソース,ドレインが接続されゲートに前記所定電圧が印加されるバイアス用トランジスタとを備えることを特徴とする請求項1に記載の電源保護回路。   The bias means includes a bias circuit that generates a predetermined voltage that rises in conjunction with the application of the power supply voltage, and a bias circuit in which a source and a drain are connected between the connection point and ground and the predetermined voltage is applied to the gate. The power supply protection circuit according to claim 1, further comprising a transistor. 前記接続点と前記保護用トランジスタのゲートとの間にローパスフィルタを設けたことを特徴とする請求項1または請求項2に記載の電源保護回路。   The power supply protection circuit according to claim 1, wherein a low-pass filter is provided between the connection point and the gate of the protection transistor. 外部電源に接続される前記電源端子と内部の前記保護対象回路との間に請求項1乃至請求項3のいずれかに記載の電源保護回路が形成されたことを特徴とする集積回路。   4. An integrated circuit, wherein the power protection circuit according to claim 1 is formed between the power terminal connected to an external power source and the protection target circuit inside.
JP2007330779A 2007-12-21 2007-12-21 Power protection circuit and integrated circuit Withdrawn JP2009152484A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011119356A (en) * 2009-12-01 2011-06-16 Sanyo Electric Co Ltd Semiconductor device
JP2014523145A (en) * 2011-08-05 2014-09-08 アーエムエス アクチエンゲゼルシャフト Circuit device for electrostatic discharge protection

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011119356A (en) * 2009-12-01 2011-06-16 Sanyo Electric Co Ltd Semiconductor device
US8693150B2 (en) 2009-12-01 2014-04-08 Semiconductor Components Industries, Llc Semiconductor apparatus
JP2014523145A (en) * 2011-08-05 2014-09-08 アーエムエス アクチエンゲゼルシャフト Circuit device for electrostatic discharge protection
US9397495B2 (en) 2011-08-05 2016-07-19 Ams Ag Circuit arrangement for protecting against electrostatic discharges
DE102011109596B4 (en) 2011-08-05 2018-05-09 Austriamicrosystems Ag Circuit arrangement for protection against electrostatic discharges

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