JP2009152081A - Plasma processing device and plasma processing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a plasma processing device capable of improving plasma processing capability without deteriorating the capability of surface activation process by ultraviolet irradiation of a UV irradiation means adjacently installed with a plasma supply means. <P>SOLUTION: The plasma processing device includes: a UV irradiation means 1 for irradiating ultraviolet rays UV on the surface of an object S to be processed; and a plasma supply means 2 for supplying plasma P on the surface of the object S with the ultraviolet rays UV irradiated by the UV irradiation means 1, both means arranged adjacent to each other. An ozone ingress prevention means 3 for preventing ingress ozone generated at the plasma supply means 2 between the UV irradiation means 1 and the object S, is provided between the UV irradiation means 1 and the plasma supply means 2. By the ozone ingress prevention means 3, the UV irradiation means 1 and the plasma supply means 2 are spatially nearly blocked. Thus, the ozone generated at the plasma supply means 2 is prevented from ingress between the UV irradiation means 1 and the object S. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention includes cleaning of foreign substances such as organic substances existing on the surface of the object to be processed, resist peeling and etching, improvement of organic film adhesion, metal oxide reduction, film formation, plating pretreatment, coating pretreatment, The present invention relates to a plasma processing apparatus and a plasma processing method used for plasma processing such as surface modification of various materials and parts, and particularly suitable for cleaning the surface of electronic parts that require precise bonding. It is.

Conventionally, by introducing a gas between electrodes arranged opposite to each other and applying a voltage between the electrodes, a discharge is generated under atmospheric pressure or a pressure near it to generate plasma, and this plasma is generated between the electrodes. Plasma treatment is performed on a workpiece by blowing it out and supplying it to the workpiece. In addition, the surface of an object to be processed is activated by irradiating ultraviolet rays before supplying plasma (see, for example, Patent Documents 1 and 2).
JP-A-2005-72497 JP 2003-203902 A

  However, in the inventions described in Patent Documents 1 and 2, the atmosphere between the plasma treatment region and the region irradiated with ultraviolet rays is not blocked, and ozone generated in the plasma flows to the region irradiated with ultraviolet rays. As a result, ozone contained in the plasma absorbs ultraviolet rays, and as a result, it becomes difficult to sufficiently supply ultraviolet rays to the object to be processed, and the ability of the surface activation treatment by ultraviolet rays is reduced. There was a problem that it was difficult to improve their ability.

  The present invention has been made in view of the above points, and a plasma processing apparatus and a plasma processing capable of improving the plasma processing capability without reducing the surface activation processing capability of the object to be processed by ultraviolet rays. It is intended to provide a method.

  The plasma processing apparatus according to claim 1 of the present invention includes an ultraviolet irradiation means 1 for irradiating the surface of the workpiece S with ultraviolet UV, and a surface of the workpiece S irradiated with the ultraviolet UV by the ultraviolet irradiation means 1. In the plasma processing apparatus in which the plasma supply means 2 for supplying the plasma P to each other is arranged adjacent to the ozone, the ozone generated by the plasma supply means 2 enters between the ultraviolet irradiation means 1 and the workpiece S. The ozone intrusion preventing means 3 for preventing the light is provided between the ultraviolet irradiation means 1 and the plasma supply means 2.

  The plasma processing apparatus according to claim 2 of the present invention is characterized in that, in claim 1, the ozone intrusion prevention means 3 is a gas G ejected between the ultraviolet irradiation means 1 and the plasma supply means 2. It is.

  The plasma processing apparatus according to claim 3 of the present invention is the gas processing unit according to claim 1, wherein the ozone intrusion prevention unit 3 sucks the gas G ′ between the ultraviolet irradiation unit 1 and the plasma supply unit 2. It is characterized by being.

  The plasma processing apparatus according to claim 4 of the present invention is characterized in that, in claim 1, the ozone intrusion prevention means 3 is a partition wall 5 formed between the ultraviolet irradiation means 1 and the plasma supply means 2. Is.

  A plasma processing apparatus according to a fifth aspect of the present invention is the plasma processing apparatus according to any one of the first to fourth aspects, wherein the plasma supply means 2 generates the plasma P on the surface of the generation space 6 where the plasma P is generated and the workpiece S. It is a remote type plasma supply means in which the processing space 7 to be supplied is a separate space.

  A plasma processing apparatus according to a sixth aspect of the present invention is the plasma processing apparatus according to any one of the first to fourth aspects, wherein the plasma supply means 2 generates the plasma P on the surface of the generation space 6 for generating the plasma P and the workpiece S. It is a direct type plasma supply means which makes the processing space 7 to supply the same space.

  A plasma processing apparatus according to claim 7 of the present invention is characterized in that in any one of claims 1 to 6, the ultraviolet irradiation means 1 is an ultraviolet lamp.

  The plasma processing apparatus according to an eighth aspect of the present invention is characterized in that the ultraviolet irradiation means 1 is an ultraviolet LED in any one of the first to sixth aspects.

  In the plasma processing method according to claim 9 of the present invention, when the plasma processing of the workpiece S is performed using the plasma processing apparatus according to any one of claims 1 to 8, the ozone intrusion prevention means 3 performs plasma processing. Plasma is supplied after irradiating the surface of the workpiece S with the ultraviolet irradiation means 1 while preventing the ozone generated by the supply means 2 from entering between the ultraviolet irradiation means 1 and the workpiece S. The plasma P is supplied to the surface of the workpiece S by the means 2.

  According to the first aspect of the present invention, the ultraviolet irradiation means 1 and the plasma supply means 2 are substantially spatially blocked by the ozone intrusion prevention means 3, and the ozone generated by the plasma supply means 2 is separated from the ultraviolet irradiation means 1 and the target. It is possible to prevent entry between the processed objects S. Therefore, it is possible to increase the surface activity of the workpiece S by sufficiently supplying the ultraviolet rays UV to the workpiece S so as not to lower the ability of the surface activation treatment of the workpiece S by ultraviolet UV. The ability of plasma processing can be improved.

  According to the second aspect of the present invention, ozone generated in the plasma supply means 2 can be prevented from entering between the ultraviolet irradiation means 1 and the workpiece S by the gas G of the ozone intrusion prevention means 3, and this gas can be prevented. G can also be used as a gas for generating plasma, so that the efficiency of plasma processing and the reduction of material costs can be achieved.

  In the invention of claim 3, the ozone generated in the plasma supply means 2 can be prevented from entering between the ultraviolet irradiation means 1 and the workpiece S by the gas suction means 4 of the ozone intrusion prevention means 3, and The gas G ′ generated during the plasma treatment can be recovered by the gas suction means 4, and the diffusion of the gas G ′ containing ozone can be prevented.

  In the invention of claim 4, ozone generated by the plasma supply means 2 can be prevented from entering between the ultraviolet irradiation means 1 and the workpiece S by the partition wall 5 of the ozone entry prevention means 3, and has a simple configuration. Thus, it is possible to prevent the plasma processing capability from being lowered.

  In the fifth aspect of the invention, the influence of the workpiece S on the generation of the plasma P in the generation space 6 can be reduced, and the generation and improvement of the efficiency of the plasma P can be achieved. .

  In the invention of claim 6, the generation space 6 and the processing space 7 can be used together, and the apparatus can be miniaturized.

  In the invention of claim 7, even if the object to be processed S has a surface that can easily increase the intensity of ultraviolet rays and has a surface that is difficult to activate, the surface of the object to be processed S is activated by increasing the intensity of the ultraviolet rays. The processing capability can be improved.

  In the invention of claim 8, the ultraviolet irradiation means 1 can be reduced in size, and the foot space (installation area) of the apparatus can be reduced.

  Hereinafter, the best mode for carrying out the present invention will be described.

  FIG. 1 shows an example of the plasma processing apparatus of the present invention. The plasma processing apparatus includes an ultraviolet irradiation means 1, a plasma supply means 2, and an ozone intrusion prevention means 3.

  The ultraviolet irradiation means 1 is for supplying ultraviolet UV to the surface of the workpiece S. Examples of the ultraviolet irradiation means 1 include ultraviolet lamps such as an excimer UV lamp, a low pressure mercury lamp, and a high pressure mercury lamp. Moreover, as the ultraviolet irradiation means 1, an ultraviolet LED (light emitting diode) can be exemplified. When the ultraviolet lamp is used, the ultraviolet intensity can be easily increased as compared with the ultraviolet LED. Therefore, the intensity of the ultraviolet light intensity can be easily adjusted according to how easily the surface of the workpiece S is activated, and the plasma treatment can be prevented from being lowered. On the other hand, when the ultraviolet LED is used, the power consumption can be reduced even with the same ultraviolet intensity as compared with the ultraviolet lamp. Therefore, the ultraviolet ray irradiation means 1 can be reduced in size by reducing the power source and the like, and the foot space of the apparatus can be reduced.

  The plasma supply means 2 is for generating plasma P and supplying it to the surface of the workpiece S. The plasma supply unit 2 includes a plurality of electrodes 10 and 11 and a power source 12 for applying a voltage between the electrodes 10 and 11. The electrodes 10 and 11 can be formed using a conductive metal material such as copper, aluminum, brass, stainless steel having high corrosion resistance (such as SUS304), titanium, 13 chromium steel, and SUS410. The shape of the electrodes 10 and 11 is not particularly limited, but the electrode of FIG. 1 is formed in a substantially rectangular bar shape that is long in the width direction (direction perpendicular to the paper surface of FIG. 1). Moreover, you may provide the flowing water channel for distribute | circulating a cooling water inside the electrodes 10 and 11. FIG.

  A dielectric film 13 can be formed over the entire surface of the electrodes 10 and 11. The dielectric film 13 can be formed by a thermal spraying method of a ceramic material such as alumina, titania, zirconia, and the particularly effective material is alumina. Moreover, it is preferable to perform a sealing treatment on the dielectric coating 13 by a thermal spraying method. As the sealing material, an organic material such as an epoxy resin or an inorganic material such as silica can be used. In forming the dielectric coating 13, enamel coating can also be performed using an inorganic material glaze made of silica, titania, alumina, tin oxide, zirconia, or the like as a raw material. Further, a sintered body made of a ceramic material can be processed, and a conductor layer can be formed on the sintered body as electrodes 10 and 11 by metallization or coating. In the case of the above thermal spraying method, enamel coating, and sintered body processing, the thickness of the dielectric coating 13 can be set to 0.1 to 3 mm, more preferably 0.3 to 1.5 mm. If the thickness of the dielectric coating 13 is less than 0.1 mm, the dielectric coating 13 may break down. If the thickness is more than 3 mm, it is difficult to apply a voltage between the opposing electrodes 10 and 11, and as a result. As a result, the discharge may become unstable.

  In FIG. 1, the pair of electrodes 10 and 11 are disposed so as to be substantially horizontally opposed in a direction orthogonal to the width direction. The plasma supply means 2 supplies the plasma P while conveying the workpiece S substantially horizontally in a direction orthogonal to the width direction of the electrodes 10 and 11. The electrodes 10 and 11 are arranged to face each other substantially in parallel via the generation space 6. The distance between the dielectric coatings 13 and 13 provided on the opposing surfaces of the electrodes 10 and 11 is preferably 0.2 to 3 mm. If this interval (distance between the gaps of the opposing electrodes 10 and 11) deviates from the above range, it may be difficult to stably generate a uniform glow discharge in the generation space 6.

  The plasma supply means 2 formed as described above supplies plasma P to the surface of the workpiece S under atmospheric pressure or a pressure in the vicinity thereof (93.3 to 106.7 kPa (700 to 800 Torr)) to generate plasma. The processing is performed. That is, first, the gas G for plasma generation is introduced into the generation space 6 between the pair of electrodes 10 and 11 arranged to face each other through the upper surface opening. The gas G for plasma generation is not particularly limited as long as it can stably generate discharge, and rare gases can be used. In particular, the discharge start voltage is 10 kV / cm or more under atmospheric pressure. The gas G is preferred. Examples of the gas G for generating plasma having a discharge starting voltage of 10 kV / cm or more under atmospheric pressure include nitrogen, oxygen, hydrogen, methane, ammonia, air, water vapor, various organic monomers, fluorine-containing gases, etc. it can. In the present invention, the discharge start voltage of the plasma generating gas is preferably 100 kV / cm or less.

  Next, a voltage is applied between the pair of opposing electrodes 10 and 11 by the power source 12 to generate a glow-like dielectric barrier discharge in the generation space 6 and a plasma generating gas (molecules) introduced into the generation space 6. ) G is excited by the action of an electric field applied between the electrodes 10 and 11 to generate active species, whereby plasma (discharge gas) P can be generated in the generation space 6. The voltage applied between the pair of electrodes 10 and 11 facing each other by the power supply 12 is preferably a voltage having a continuous alternating waveform with a frequency of 30 to 500 kHz, and the electric field strength is preferably 50 to 200 kV / cm. . The above-mentioned continuous alternating waveform does not cause a pause period in which no voltage is applied between a pair of electrodes 10 and 11 facing each other as in a pulse waveform, and a voltage is continuously applied between a pair of electrodes 10 and 11. For example, a sinusoidal waveform can be used. A pulse waveform voltage (pulse voltage waveform) can also be applied between the electrodes 10 and 11. The pulse waveform voltage is a voltage that regularly applies a constant voltage with a pause interval. For example, the rising time and the falling time are 100 μsec or less, the repetition frequency is 0.5 to 1000 kHz, the electrode 10, By applying a waveform having an electric field strength applied between 11 and 0.5 to 200 kV / cm, the treatment can be performed stably. The power source 12 can be connected by one electrode 11 and the other electrode 10 can be grounded. The flow rate of the gas G supplied to the generation space 6 is preferably 5 to 20 m / sec. In adjusting the flow rate of the gas G, the interval between the electrodes 10 and 11 facing each other, the flow rate of the gas, and the like are adjusted.

  The plasma P generated as described above is blown out in a curtain form as a plasma jet from the lower opening of the generation space 6 over the entire length in the width direction of the electrodes 10 and 11. A space below 6 is formed as a processing space 7, and plasma P blows out from the generation space 6 into the processing space 7 and supplies the plasma P to the surface of the workpiece S. As described above, the plasma supply means 2 shown in FIG. 1 supplies a generation space 6 for generating plasma P by applying a voltage between the electrodes 10 and 11, and supplies the plasma P to the surface of the workpiece S. This is remote plasma supply means for separately forming the processing space 7 to be processed. Accordingly, there is no object to be processed S between the electrodes 10 and 11, and the influence of the object to be processed S on the generation of the plasma P in the generation space 6 is reduced, and the generation of the plasma P is stable. And efficiency improvement.

  The ozone intrusion preventing means 3 is for preventing ozone generated by the plasma supply means 2 from entering between the ultraviolet irradiation means 1 and the workpiece S. In FIG. 1, a nozzle for sucking the gas G ′ constituting the atmosphere between the ultraviolet irradiation means 1 and the plasma supply means 2 is provided as the gas suction means 4, and this nozzle is connected to a suction pump. I am doing so. The gas suction means 4 sucks the gas G ′ generated during the plasma processing by exerting a suction action on the space between the ultraviolet irradiation means 1 and the plasma supply means 2 so that the gas G ′ containing ozone is turned into the ultraviolet irradiation means. Inflow between 1 and the to-be-processed object S can be interrupted | blocked. The ozone entry preventing means 3 is preferably provided between the ultraviolet irradiation means 1 and the plasma supply means 2. For example, in the invention described in Patent Document 2, there is a possibility that the gas in the ultraviolet irradiation portion flows into the plasma processing portion, resulting in an atmosphere unsuitable for the plasma processing, but such a problem does not occur in the present invention.

  When the plasma processing is performed on the workpiece S under the atmospheric pressure or a pressure in the vicinity thereof by using the plasma processing apparatus formed as described above, the processing is performed as follows.

First, the workpiece S is conveyed so as to pass under the ultraviolet irradiation means 1. Thereby, the surface (upper surface) of the workpiece S is irradiated with ultraviolet rays UV from the ultraviolet irradiation means 1 in an atmosphere of air that is a gas containing oxygen. At this time, the intensity of the ultraviolet UV irradiated on the surface of the object to be processed S varies depending on the type of the object to be processed S, the conveying speed, the wavelength of the UV UV, the wattage, and the like, for example, 4 to 100 mW / cm ² . can do. And the surface of the to-be-processed object S is activated by this ultraviolet irradiation, and makes the atomic oxygen irradiated at the time of subsequent plasma processing easy to react.

  Next, the workpiece S immediately after being irradiated with the ultraviolet UV is transported to the processing space 7, and the plasma P blown from the generation space 6 is blown onto the surface of the workpiece S to supply the plasma of the workpiece S. Process. Thus, before supplying plasma P to the surface of the object to be processed S, the surface of the object to be processed S is irradiated with ultraviolet UV in an atmosphere of oxygen-containing gas. After the adsorption, the plasma P can be supplied to the surface, and the oxygen molecules adsorbed on the surface of the workpiece S can be activated to improve the treatment capacity. In addition, after supplying ultraviolet light UV to the surface of the object to be processed S, the plasma P is continuously supplied to the surface of the object to be processed S, whereby oxygen adsorbed on the surface of the object to be processed S is obtained. The plasma P can be supplied before the molecules are released, and the plasma processing capability can be prevented from being lowered.

  In the present invention, while the ultraviolet ray UV is applied to the workpiece S, the gas suction means 4 which is the ozone intrusion prevention means 3 sucks the space between the ultraviolet irradiation means 1 and the plasma supply means 2. The gas G ′ generated during the plasma processing is sucked to prevent the gas G ′ containing ozone from flowing between the ultraviolet irradiation means 1 and the workpiece S. Accordingly, the ultraviolet ray UV generated from the ultraviolet ray supply means 1 is not absorbed by ozone, and the ultraviolet ray UV can be sufficiently supplied to the object to be processed S. Before the plasma P is supplied, the object to be processed S is supplied. The surface activity can be increased, and as a result, the treatment with the plasma P can be sufficiently exerted on the surface of the workpiece S. Further, the gas G ′ generated during the plasma treatment can be recovered by the gas suction means 4, and the diffusion of the gas G ′ containing ozone can be prevented.

  In addition, in this invention, it can apply not only when conveying the to-be-processed object S substantially horizontally, but when conveying in arbitrary directions, such as a perpendicular direction, for example. Further, as the conveying means, an apparatus such as an XY table or a belt conveyor that can continuously convey the object to be processed S in a predetermined conveying direction is preferable, and a plurality of objects to be processed S are provided at regular time intervals. What can be continuously conveyed is preferable. In the present invention, if the number of electrodes is two or more, it can be arbitrarily set as necessary, and the voltage application conditions are not limited to those described above. For example, the frequency of the applied voltage, The waveform shape, the electric field strength, the gas flow rate, the conveyance speed of the workpiece S, and the like can be arbitrarily set as necessary. Furthermore, the ozone intrusion prevention unit 3 may be operated at least while the ultraviolet ray UV is applied to the object to be processed S. However, the present invention is not limited to this, for example, the irradiation of the ultraviolet ray UV to the object to be processed S is started. The ozone intrusion prevention means 3 may be operated in all steps until the supply of the plasma P is completed. The gas (exhaust gas) G ′ once used for the plasma treatment is contaminated by air contamination, vaporized substances adhering to the surface, contamination, etc., but can be reused after purification. The present invention can be suitably used for performing plasma treatment on a plate-like workpiece S such as a glass plate for a liquid crystal panel display (LCD).

  FIG. 2 shows another embodiment. In this plasma processing apparatus, a partition wall 5 is provided instead of the gas suction means 4 as the ozone intrusion prevention means 3, and the other configurations are the same as those in FIG. The partition wall 5 may be anything as long as it can be disposed between the ultraviolet irradiation means 1 and the plasma supply means 2. For example, a plastic plate or a metal plate can be used. It is desirable to use materials that are durable to P. The object to be processed S is transferred to the processing space 7 below the plasma supply means 2 through the lower side of the partition wall 5 after being irradiated with ultraviolet rays UV.

  In this plasma processing apparatus, the partition 5 separates the space between the ultraviolet irradiation means 1 and the workpiece S and the plasma processing means 2 (the generation space 6 and the processing space 7), thereby generating a gas G ′ generated during the plasma processing. Can be prevented from entering between the ultraviolet irradiation means 1 and the object to be processed S, and therefore ozone contained in the gas G ′ can enter between the ultraviolet irradiation means 1 and the object to be processed S. It can be prevented. In addition, a large-scale device such as a suction pump is not required as compared with that shown in FIG. 1, and the plasma processing capability can be prevented from being lowered with a simple configuration.

  FIG. 3 shows another embodiment. This plasma processing apparatus is provided with a gas suction means 4 similar to that shown in FIG. 1 and a partition wall 5 similar to that shown in FIG. 2 as ozone intrusion prevention means 3, and other configurations are the same as those shown in FIG. In this case, in order to sufficiently suck the gas G ′ by the gas suction means 4, the gas suction means 4 is disposed at a position closer to the plasma supply means 2 than the partition walls 5.

  In this plasma processing apparatus, the effect of preventing ozone from entering between the ultraviolet irradiation means 1 and the workpiece S is enhanced by using the two ozone entry preventing means 3 of the gas suction means 4 and the partition wall 5. It is something that can be done.

  FIG. 4 shows another embodiment. In this plasma processing apparatus, the plasma supply means 2 is a direct type, and the ozone intrusion prevention means 3 is formed of a gas G ejected between the ultraviolet irradiation means 1 and the plasma supply means 2. The other configuration is almost the same as that of FIG.

  The direct type plasma supply means 2 of this embodiment is formed with a plurality of electrodes 10, 11 and a power source 12 for applying a voltage between the electrodes 10, 11. One electrode 11 is formed in a substantially rectangular bar shape that is long in the width direction using a conductive metal material in the same manner as described above. A dielectric film 13 is formed on the lower and side surfaces of the electrode 11 and a power source 12 is connected. The other electrode 10 is formed in a cylindrical shape using a conductive metal material. The electrode 10 is formed so as to be rotatable about the shaft portion 10a and is grounded through the shaft portion 10a. And the plasma supply means 2 can be formed by arrange | positioning the electrodes 10 and 11 facing up and down. The plasma supply means 2 generates a plasma P by applying a voltage between the electrodes 10 and 11. The plasma supply means 2 generates the plasma P on the surface of the processing object S and the generation space 6 for generating the plasma P. The processing space 7 to be supplied is formed in the same space between the electrodes 10 and 11. Therefore, the generation space 6 and the processing space 7 can be used together, and the apparatus can be reduced in size.

  The gas G used as the ozone intrusion prevention means 3 is preferably one that hardly absorbs the ultraviolet rays UV, and for example, the same gas G as the plasma generating gas G described above can be used. Specifically, it is preferable to use nitrogen or nitrogen mixed with a small amount of oxygen. This gas G is ejected from an ejection nozzle 14 disposed between the ultraviolet irradiation means 1 and the upper electrode 11 of the plasma supply means 2.

  The plasma processing apparatus of the present invention can be used when plasma processing is performed using a long sheet as the workpiece S. That is, the workpiece S is transported so as to pass through the lower side of the ultraviolet irradiation means 1, the lower side of the ejection nozzle 14, and the processing space 7 (generation space 6). Is configured such that the lower surface of the workpiece S is aligned with the outer peripheral surface of the rotating lower electrode 10. Similarly to the above, the upper surface of the workpiece S is irradiated with ultraviolet rays UV when passing below the ultraviolet irradiation means 1, and then plasma P is supplied in the processing space 7.

  In this plasma processing apparatus, since the gas G is ejected from the ejection nozzle 14 toward the upper surface of the workpiece S, the ultraviolet irradiation means 1 and the plasma supply means 2 are substantially spatially blocked by the gas G. . Therefore, ozone generated by the plasma supply means 2 can be prevented from entering between the ultraviolet irradiation means 1 and the workpiece S. In addition, the gas G ejected from the ejection nozzle 14 enters the generation space 6 from the side opening thereof, and is converted into plasma by the action of the electric field applied between the electrodes 10 and 11. Therefore, the plasma P can be easily generated by using the gas G which is the ozone intrusion preventing means 3, and the efficiency of the plasma processing and the reduction of the material cost can be achieved.

  Hereinafter, the present invention will be described specifically by way of examples.

Example 1
The plasma processing apparatus shown in FIG. 1 was formed. As the ultraviolet irradiation means 1, a 1.5 kW ultraviolet lamp was used. The electrodes 10 and 11 of the plasma supply means 2 are made of titanium having a length of 300 mm, and an alumina layer having a thickness of 1 mm is formed on the surfaces of the electrodes 10 and 11 by a thermal spraying method to form a dielectric coating 13. Further, cooling water was circulated inside the electrodes 10 and 11. The pair of electrodes 10 and 11 formed in this way were arranged to face each other with an interval of 1 mm when not discharged. The ozone intrusion prevention means 3 has a nozzle installed as the gas suction means 4 between the ultraviolet irradiation means 1 and the plasma supply means 2, and ozone generated from the plasma supply means 2 is generated by a suction pump connected to the nozzle. The gas G ′ contained was sucked at 1 m ³ / min to suppress the inflow of ozone below the ultraviolet irradiation means 1.

(Example 2)
The plasma processing apparatus shown in FIG. 2 was formed. The ozone intrusion prevention means 3 is a stainless steel plate having a thickness of 1 mm as a partition wall 5 between the ultraviolet irradiation means 1 and the plasma supply means 2. Other configurations were the same as those in Example 1.

(Example 3)
The plasma processing apparatus shown in FIG. 3 was formed. The ozone intrusion prevention means 3 uses the gas suction means 4 of Example 1 and the partition wall 5 of Example 2 in combination. Other configurations were the same as those in Example 1.

(Comparative Example 1)
In Example 1, a plasma processing apparatus was formed except for the ultraviolet irradiation means 1 and the ozone intrusion prevention means 3.

(Comparative Example 2)
In Example 1, a plasma processing apparatus was formed except for the ozone intrusion prevention means 3.

<Evaluation of plasma processing ability>
Using the plasma processing apparatus as described above, a gas G for plasma generation 60 at a pressure of nitrogen of 60 liters / minute and oxygen of 0.15 liters / minute is introduced into the generation space 6 under atmospheric pressure, and the electrodes 10, 11 are supplied by a power source 12. A voltage of 50 kHz and 10 kV having a sinusoidal waveform was applied between them, a discharge was generated in the generation space 6 between the electrodes 10 and 11, and the plasma P was blown out into the processing space 7.

An acrylic plate is used as the object to be processed S, and the distance (irradiation distance) from the lower ends of the ultraviolet irradiation means 1 and the electrodes 10 and 11 to the upper surface of the object to be processed S is set to 5 mm or 10 mm, and is approximately horizontal at 10 m / min. It was conveyed to. And the to-be-processed object S was introduce | transduced into the process space 7 immediately after 500 mW / cm < ² > ultraviolet-ray UV was irradiated by the ultraviolet irradiation means 1, and it conveyed so that the plasma P might be supplied, and the plasma processing was performed. The water contact angle before plasma treatment of the acrylic plate used in this evaluation is 65 °.

  About Examples 1-3 and Comparative Examples 1 and 2, the water contact angle of the surface of the workpiece S after the plasma treatment was measured. These results are shown in Table 1.

  As shown in Table 1, it can be seen that in Examples 1 to 3, the water contact angle was greatly reduced as compared to Comparative Examples 1 and 2. Moreover, in Example 1 which has arrange | positioned the gas suction means 4, it turns out that a water contact angle falls further and the modification effect is high. In addition, in Example 3 in which the partition walls are installed, the reforming effect more than that in Example 1 is exhibited, and in Example 3 in which the suction nozzle and the partition walls are installed at the same time, the water contact angle is the lowest and a remarkable reforming effect is obtained. It was. On the other hand, in Comparative Examples 1 and 2, the change in water contact angle was small. Therefore, it can be said that Examples 1-3 which added the ultraviolet irradiation means 1 and the ozone intrusion prevention means 3 have a plasma processing capability higher than Comparative Examples 1 and 2. Further, it can be seen that the plasma treatment ability is higher when the irradiation distance is shorter in any of the examples.

Example 4
The plasma processing apparatus shown in FIG. 4 was formed. An electrode 11 covered with a dielectric coating 13 made of an insulating material (dielectric material) having a thickness of 1 mm is disposed at an upper position facing the grounded cylindrical electrode 10 having a diameter of 300 mm. The electrode 11 is connected to a power source 12. did. The distance of the shortest part between the dielectric coating 13 of the electrode 11 and the cylindrical electrode 10 was 1 mm. As the ultraviolet irradiation means 1, the same ultraviolet lamp as in Example 1 was installed. Further, a gas generation nozzle 14 for plasma generation was installed between the ultraviolet irradiation means 1 and the plasma supply means 2.

(Comparative Example 3)
In Example 4, a plasma processing apparatus was formed except for the ultraviolet irradiation means 1.

<Evaluation of plasma processing ability>
Using the plasma processing apparatus as described above, a plasma generation gas G of 10 liters / minute of nitrogen and 0.25 liters / minute of oxygen is ejected from the ejection nozzle 14 under atmospheric pressure, and this gas G is produced in the production space 6. And a voltage of 30 kHz and 10 kV having a sinusoidal waveform was applied between the electrodes 10 and 11 by the power source 12 to generate a discharge in the generation space 6 between the electrodes 10 and 11.

As the object to be processed S, a polyimide film having a thickness of 25 μm was used, and the object to be processed S was conveyed at 50 m / min. Then, the workpiece S is introduced so as to be introduced into the processing space 7 (generation space 6) and supplied with plasma P immediately after being irradiated with 500 mW / cm ² of ultraviolet rays UV by the ultraviolet irradiation means 1, and plasma processing is performed. Went. The water contact angle before the plasma treatment of the polyimide film used in this evaluation is 72 °.

  For Example 4 and Comparative Example 3, the water contact angle of the surface of the workpiece S after the plasma treatment was measured. These results are shown in Table 2.

  As shown in Table 2, it can be seen that in Example 4, the water contact angle was greatly reduced. On the other hand, in Comparative Example 3, the change in water contact angle was small. Therefore, it can be said that Example 4 has a higher plasma processing capacity than Comparative Example 3.

It is sectional drawing which shows an example of embodiment of this invention. It is sectional drawing which shows an example of other embodiment same as the above. It is sectional drawing which shows an example of further another embodiment same as the above. It is sectional drawing which shows an example of further another embodiment same as the above.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Ultraviolet irradiation means 2 Plasma supply means 3 Ozone approach prevention means 4 Gas suction means 5 Partition 6 Generation space 7 Processing space P Plasma G Gas G 'Gas S To-be-processed UV UV

Claims (9)

  Plasma processing in which ultraviolet irradiation means for irradiating ultraviolet rays onto the surface of the workpiece and plasma supply means for supplying plasma to the surface of the workpiece irradiated with ultraviolet rays by the ultraviolet irradiation means are arranged adjacent to each other. In the apparatus, ozone entry preventing means for preventing ozone generated by the plasma supply means from entering between the ultraviolet irradiation means and the object to be processed is provided between the ultraviolet irradiation means and the plasma supply means. A plasma processing apparatus.   The plasma processing apparatus according to claim 1, wherein the ozone intrusion preventing means is a gas ejected between the ultraviolet irradiation means and the plasma supply means.   2. The plasma processing apparatus according to claim 1, wherein the ozone intrusion preventing means is a gas suction means for sucking a gas between the ultraviolet irradiation means and the plasma supply means.   2. The plasma processing apparatus according to claim 1, wherein the ozone intrusion prevention means is a partition wall formed between the ultraviolet irradiation means and the plasma supply means.   5. The plasma supply means according to claim 1, wherein the plasma supply means is a remote type plasma supply means in which a generation space for generating plasma and a processing space for supplying plasma to the surface of an object to be processed are separate spaces. The plasma processing apparatus according to claim 1.   The plasma supply means is direct plasma supply means in which a generation space for generating plasma and a processing space for supplying plasma to the surface of an object to be processed are the same space. The plasma processing apparatus according to claim 1.   The plasma processing apparatus according to any one of claims 1 to 6, wherein the ultraviolet irradiation means is an ultraviolet lamp.   The plasma processing apparatus according to any one of claims 1 to 6, wherein the ultraviolet irradiation means is an ultraviolet LED.   When performing plasma processing of an object to be processed using the plasma processing apparatus according to any one of claims 1 to 8, ozone generated in the plasma supply means by ozone intrusion preventing means is converted into ultraviolet irradiation means, an object to be processed, and A plasma processing method comprising: irradiating the surface of an object to be processed with ultraviolet irradiating means while preventing intrusion in between and supplying plasma to the surface of the object to be processed with plasma supplying means.

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