JP2009147152A - Substrate cleaning apparatus and substrate cleaning method, - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate cleaning apparatus and a substrate cleaning method that reduces the discharge of gas of chemical and easily control the discharge of the gas, eliminates the need to consider the chemical resistance of peripheral units other than a processing space formation section and a processing liquid feeding section, and improves the maintenability of the processing liquid feeding section. <P>SOLUTION: The substrate cleaning apparatus that cleans the peripheral portion of a substrate W to be treated includes a rotation supporting section 22 that holds and rotates the substrate W, and a processing space formation section 30 that forms a processing space 36 to cover the peripheral portion of the substrate W held by the rotation supporting section 22. In addition, a processing liquid feeding section 40 that supplies the processing liquid to the peripheral portion of the substrate W located in the processing space 36 is also provided. The processing liquid feeding section 40 can be inserted into the processing space 36, which is formed by the processing space formation section 30, from the outside. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a substrate cleaning apparatus and a substrate cleaning method for cleaning a peripheral portion of a substrate to be processed.

  In general, in the manufacturing process of a semiconductor device, contamination (resistant, contamination, resist, particles, organic contaminants, metal impurities, etc. adhering to a semiconductor wafer or a glass substrate for LCD (hereinafter referred to as a wafer) as a substrate to be processed. A substrate cleaning apparatus is used to remove (hereinafter also simply referred to as dirt). As one of substrate cleaning apparatuses for cleaning a wafer or the like, for example, a spin type device is known.

  This type of conventional spin-type substrate cleaning apparatus supports a wafer from below by a spin chuck disposed in the chamber, and rotates the spin chuck at a low speed while supplying nozzles installed in the chamber. Thus, the chemical solution and the pure water are sequentially supplied to the surface of the wafer, the chemical treatment and the rinse treatment are sequentially performed, and then the spin chuck is rotated at a high speed to perform the drying treatment (see, for example, Patent Document 1).

  Further, as a substrate cleaning apparatus for cleaning only the peripheral portion of the wafer, not the entire surface of the wafer, for example, a device as shown in Patent Document 2 is known. In the substrate cleaning apparatus as shown in Patent Document 2, a processing liquid supply nozzle is provided, and a substantially U-shaped member is provided so as to cover only the peripheral edge of the wafer. Thus, the processing liquid is supplied from the supply nozzle to the peripheral edge with the peripheral edge of the wafer being sandwiched.

JP 2001-160546 A JP 2007-165488 A

  By the way, in a conventional general substrate cleaning apparatus as shown in Patent Document 1, for example, a supply nozzle is installed in a chamber. For this reason, the chemical liquid sprayed from the supply nozzle onto the wafer surface evaporates, the chemical liquid gas generated by the evaporation of the chemical liquid spreads in the chamber, and the chamber is filled with the atmosphere of the chemical liquid. However, in recent substrate cleaning apparatuses, due to the increase in size of the chamber and the complexity of the structure by incorporating peripheral units such as supply nozzles in the chamber, the amount of chemical gas generated by the evaporation of the chemical liquid can be reduced. In addition, there is a problem that it becomes difficult to control the exhaust of the chemical gas. In addition, there is a case where a chemical liquid sprayed from the supply nozzle onto the wafer surface is scattered in the chamber, and there is a problem that the peripheral unit must have chemical resistance. Furthermore, since the supply nozzle is installed in the chamber, there is a problem that maintenance of the supply nozzle cannot be easily performed.

  Also, for example, in a substrate cleaning apparatus that cleans only the peripheral edge of a wafer as shown in Patent Document 2 or the like, a substantially U-shaped member is installed in the chamber, and the supply nozzle is the approximately U-shaped. Since the chemical liquid ejected from the supply nozzle evaporates, the chamber is filled with the chemical atmosphere, or the chemical liquid ejected from the supply nozzle scatters in the chamber. There is a problem of doing.

  The present invention has been made in consideration of such points, and the processing space for cleaning the substrate to be processed is miniaturized and simplified, and thereby a chemical solution generated by evaporation of the chemical solution. The chemical gas can be easily controlled and the chemical resistance of the peripheral units other than the processing space forming part and the processing liquid supply part is taken into consideration. It is an object of the present invention to provide a substrate cleaning apparatus and a substrate cleaning method that can eliminate the necessity and further improve the maintainability of the processing liquid supply unit.

  A substrate cleaning apparatus according to the present invention is a substrate cleaning apparatus for cleaning a peripheral portion of a substrate to be processed, and includes a rotation support unit that supports and rotates the substrate to be processed, and a substrate to be processed supported by the rotation support unit. A processing space forming part that forms a processing space that covers the peripheral part of the substrate, and a processing space formed by the processing space forming part can be inserted from the outside, and the peripheral edge of the substrate to be processed in the processing space And a processing liquid supply unit that supplies the processing liquid to the unit. Here, the processing space formed by the processing space forming portion generally covers only the peripheral portion of the substrate to be processed, not the entire surface of the substrate to be processed supported by the rotation support portion.

  According to such a substrate cleaning apparatus, the processing space forming unit forms a processing space that covers the peripheral portion of the substrate to be processed, inserts the processing liquid supply unit into the processing space from the outside, and rotates the substrate to be processed. However, a processing liquid such as a chemical solution or pure water is supplied to the peripheral portion of the substrate to be processed by the processing liquid supply unit inserted into the processing space. In this way, a processing space for cleaning the substrate to be processed is formed, and the processing space is miniaturized and simplified, so that the amount of chemical gas generated by the evaporation of the chemical is reduced. In addition, it is possible to easily control the exhaust of the chemical gas. In addition, since the processing liquid is prevented from flowing out of the processing space, chemical resistance is taken into consideration for peripheral units other than the processing space forming unit and the processing liquid supply unit, specifically, for example, the rotation support unit. There is no need. Furthermore, since the processing liquid supply unit is normally outside the processing space forming unit, the operator can easily perform maintenance of the processing liquid supply unit, and the maintainability of the processing liquid supply unit is improved. .

  In the substrate cleaning apparatus of the present invention, it is preferable that the processing liquid supply unit supplies the processing liquid to the peripheral portions on both the front and back surfaces of the substrate to be processed.

  In the substrate cleaning apparatus of the present invention, the processing space forming unit is provided with an opening through which the processing liquid supply unit can pass, and the processing liquid supply unit is disposed in the processing space. Between the processing position located at the position and the retreat position where the processing liquid supply unit is retracted to the outside of the processing space, and the processing liquid supply unit is reciprocally movable through the opening. It is preferable that the space between the processing liquid supply unit and the processing space forming unit be sealed when inserted into the processing space.

  In the substrate cleaning apparatus of the present invention, a gas supply unit for injecting gas toward the processing space is provided outside the processing space, and the gas is injected from the gas supply unit toward the processing space. Thus, it is preferable that the processing liquid or the gas of the processing liquid in the processing space does not flow out of the processing space.

  In the substrate cleaning apparatus of the present invention, it is preferable that the substrate cleaning apparatus further includes a suction unit that communicates with the processing space and sucks the processing liquid or gas from the processing space to discharge or exhaust the liquid.

  In the substrate cleaning apparatus of the present invention, it is preferable that the substrate cleaning apparatus further includes a position adjusting unit that adjusts a position of the substrate to be processed with respect to the rotation support unit. Here, the position adjustment unit has a plurality of position adjustment members that can contact the side surface of the substrate to be processed, and at least one position adjustment member faces the substrate to be processed supported by the rotation support unit. It is more preferable that the position of the substrate to be processed is adjusted with respect to the rotation support portion when the substrate to be processed is sandwiched between the plurality of position adjusting members. In addition, at least one position adjusting member among the plurality of position adjusting members is provided in the processing liquid supply unit, and the processing liquid supply unit is configured to position the substrate to be processed with respect to the rotation support unit by the position adjusting unit. When the adjustment is performed, it is more preferable that the position adjustment pin provided in the processing liquid supply unit is moved to a position suitable for the alignment of the substrate to be processed.

  In the substrate cleaning apparatus of the present invention, a gas injection portion that is provided at a distance below the substrate to be processed supported by the rotation support portion and injects the gas upward, and a gas that sucks the gas downward It is preferable to further include a gas injection / suction part having a suction part.

  The substrate cleaning method of the present invention is a substrate cleaning method for cleaning a peripheral portion of a substrate to be processed, and includes a step of forming a processing space that covers the peripheral portion of the substrate to be processed by a processing space forming portion, A step of inserting a processing liquid supply unit into the processing space, and a step of supplying a processing liquid to a peripheral portion of the substrate to be processed by the processing liquid supply unit inserted into the processing space while rotating the substrate to be processed. , Provided. Here, the processing space formed by the processing space forming part generally covers only the peripheral portion of the substrate to be processed, not the entire surface of the substrate to be processed.

  According to such a substrate cleaning method, since a processing space for cleaning the substrate to be processed is formed, and the processing space is miniaturized and simplified, the chemical gas generated by the evaporation of the chemical liquid The amount of exhaust gas can be reduced, and the exhaust of the chemical gas can be easily controlled. Further, since the processing liquid is prevented from flowing out of the processing space, it is not necessary to consider chemical resistance for peripheral units other than the processing space forming unit and the processing liquid supply unit. Furthermore, since the processing liquid supply unit is normally outside the processing space forming unit, maintenance of the processing liquid supply unit can be easily performed, and the maintainability of the processing liquid supply unit is improved.

  In the substrate cleaning method of the present invention, the processing space forming section is provided with an opening through which the processing liquid supply section can pass, and when the processing liquid supply section is inserted into the processing space from the outside, The processing liquid supply unit is moved through the opening from a retracted position where the processing liquid supply unit is retracted to the outside of the processing space to a processing position where the processing liquid supply unit is positioned in the processing space. Is preferred.

  In the substrate cleaning method of the present invention, the gas may be jetted from the outside of the processing space toward the processing space so that the processing liquid in the processing space or the gas of the processing liquid does not flow out to the external region. preferable.

  In the substrate cleaning method of the present invention, when the processing liquid is supplied to the peripheral portion of the substrate to be processed by the processing liquid supply unit, the processing liquid or gas is sucked from the processing space to be drained or exhausted. preferable.

  In the substrate cleaning method of the present invention, it is preferable that the gas is injected upward and the gas is sucked downward by a gas injection / suction unit provided at a distance below the substrate to be processed.

  According to the substrate cleaning apparatus and the substrate cleaning method of the present invention, the processing space for cleaning the substrate to be processed is miniaturized and simplified, thereby exhausting the gas of the chemical liquid generated by the evaporation of the chemical liquid. It is possible to reduce the amount and easily control the exhaust of this chemical gas, and it is not necessary to consider chemical resistance for peripheral units other than the processing space forming part and the processing liquid supply part, Furthermore, the maintainability of the processing liquid supply unit can be improved.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings. 1 to 7 are diagrams showing the configuration of the substrate cleaning apparatus according to the present embodiment.
Among these, FIG. 1 is a side view showing the configuration of the substrate cleaning apparatus of the present embodiment, and is a view showing a state in which the cup containing the wafer is opened and the processing liquid supply member is in the retracted position. FIG. 2 is a diagram illustrating a state where the cup is closed after the wafer is accommodated and the processing liquid supply member is moved to the processing position.
3 is a schematic configuration diagram showing an outline of the configuration of the wafer position adjusting mechanism when the substrate cleaning apparatus shown in FIGS. 1 and 2 is viewed from above. FIG. 4 is a schematic configuration diagram of the substrate shown in FIGS. FIG. 5 is a side sectional view showing details of the configuration of the processing liquid supply member in the cleaning apparatus together with the wafer, and FIG. 5 is a top view of the processing liquid supply member shown in FIG.
6 is a side view showing a configuration of a cup opening / closing mechanism that opens and closes the cup in the substrate cleaning apparatus shown in FIGS. 1 and 2, and shows a state when the cup is opened. 7 is a view showing a state when the cup is closed.

First, an outline of the overall configuration of the substrate cleaning apparatus 10 according to the present embodiment will be described with reference to FIGS. 1 and 2.
As shown in FIGS. 1 and 2, the substrate cleaning apparatus 10 is provided with a base 20 and a spin chuck 22 that extends upward from the base 20 and supports a semiconductor wafer W (hereinafter simply referred to as wafer W) from the back surface. And a spin chuck drive motor 26 for rotating the spin chuck 22. Further, a cup 30 for accommodating the wafer W supported by the spin chuck 22 is provided above the base 20. The cup 30 includes an upper cup portion 32 and a lower cup portion 34 that sandwich the wafer W supported by the spin chuck 22 from above and below. The upper cup portion 32 and the lower cup portion 34 can be raised and lowered (that is, movable in the vertical direction in FIG. 1) by a cup opening / closing mechanism 60 (described later) as shown in FIGS. Each of these cup portions 32 and 34 has a position where the internal wafer W can be accessed as shown in FIG. 1 and a position where the internal wafer W can be completely closed as shown in FIG. It goes up and down between. Further, a processing liquid supply mechanism 40 is provided on the base 20 outside the cup 30. The processing liquid supply mechanism 40 can be inserted into a processing space 36 (described later) formed by the cup 30 from the outside, and a chemical solution (for example, hydrogen fluoride) is disposed on the periphery of the wafer W in the processing space 36. Treatment liquid such as hydrofluoric acid) or pure water, and nitrogen gas (N 2 gas) are supplied.

  Hereinafter, each component of the substrate cleaning apparatus 10 will be described in detail with reference to FIGS.

  First, the rotation drive unit that supports and rotates the wafer W will be described. As shown in FIGS. 1 and 2, the spin chuck 22 is installed so as to extend upward from the base 20. The spin chuck 22 includes a substantially disc-shaped support plate 22a that supports the wafer W and a substantially cylindrical rotating body 22b that is coupled to the lower side of the support plate 22a. A pulley 22d is attached to the rotating body 22b, and a spin chuck drive motor 26 is connected to the pulley 22d via a circulation belt 28. When the spin chuck driving motor 26 is driven here, the rotational driving force is transmitted to the pulley 22d via the circulation belt 28, and the support plate 22a and the rotating body 22b are integrally rotated in the direction of the arrow in FIGS. It is supposed to be.

  As shown in FIGS. 1 and 2, a through hole 22c is formed in the central portion of the support plate 22a and the rotating body 22b of the spin chuck 22, and a suction unit (not shown) communicating with the lower end portion of the through hole 22c. (Not shown) is provided. When the wafer W is placed on the support plate 22a, the suction unit performs a suction operation, whereby the wafer W is attracted to the support plate 22a and the wafer W is held by the support plate 22a. .

  Next, a processing space forming unit that forms the processing space 36 that covers the peripheral edge of the wafer W supported by the spin chuck 22 will be described. Here, the processing space 36 is formed over the entire circumference of the peripheral edge of the wafer W supported by the spin chuck 22.

  As shown in FIGS. 1 and 2, a cup 30 that accommodates a wafer W supported by a spin chuck 22 is provided above the base 20. As described above, the cup 30 includes the upper cup portion 32 and the lower cup portion 34. Here, the upper cup portion 32 has a substantially disk shape, and a through hole 32 a for supplying N 2 gas downward from the upper cup portion 32 is provided in the center portion thereof. The upper end portion of the through-hole 32a is connected to an N2 gas supply source (not shown), and N2 gas is supplied from the N2 gas supply source to the through-hole 32a, so that the upper cup portion 32 moves downward from the through-hole 32a. N2 gas will be supplied.

  On the other hand, as shown in FIGS. 1 and 2, the lower cup portion 34 has a substantially annular shape (doughnut shape) in which an opening is formed in the center portion. The opening formed in the center portion of the lower cup portion 34 is provided so that the spin chuck 22 and a gas injection / suction mechanism 50 described later pass through when the lower cup portion 34 moves up and down. Here, the lower cup portion 34 is formed on the upper surface of the base member 34a in the vicinity of the outer peripheral edge of the base member 34a and in the vicinity of the outer peripheral edge of the base member 34a, and becomes a side wall of the processing space 36 described later. It is comprised from the annular side wall member 34b. The side wall member 34 b is positioned outside the wafer W supported by the spin chuck 22. A seal member 34c made of an O-ring such as rubber is provided on the upper surface of the side wall member 34b. As shown in FIG. 2, the lower surface of the upper cup portion 32 and the upper surface of the side wall member 34b of the lower cup portion 34 Are joined via the sealing member 34c, so that the upper cup portion 32 and the lower cup portion 34 are sealed.

  The side wall member 34b has a through hole 34d through which a processing liquid supply member 46 of the processing liquid supply mechanism 40 described later passes, and a through hole 34e through which an arm 76 of a wafer position adjusting mechanism 70 described later passes. Each is provided to extend in the horizontal direction. Further, as shown in FIGS. 1 to 3, a suction pipe 34f for sucking liquid or gas inside the side wall member 34b on the base member 34a is provided in the lower cup portion 34 inward of the side wall member 34b. (See FIGS. 1 to 3, especially FIG. 3). A suction device (not shown) is provided at the base of the suction tube 34f, and the liquid or gas in the processing space 36 is sucked through the suction tube 34f by the suction device.

  Further, a substantially ring-shaped N 2 gas supply member 34g is formed on the upper surface of the base member 34a in the vicinity of the inner peripheral edge of the base member 34a, that is, inside the substantially ring-shaped side wall member 34b. The N 2 gas supply member 34 g is positioned slightly below the wafer W supported by the spin chuck 22. As shown in FIGS. 1 and 2, an N2 gas supply nozzle 34h for injecting N2 gas is provided on the upper surface of the N2 gas supply member 34g. The N 2 gas supply nozzle 34 h is configured to inject N 2 gas obliquely upward from the upper surface of the N 2 gas supply member 34 g toward the back surface of the wafer W.

  The upper cup portion 32 and the lower cup portion 34 can be moved up and down by a cup opening / closing mechanism 60 described later (that is, movable in the vertical direction in FIG. 1), and as shown in FIG. When the lower surface of 32 and the upper surface of the side wall member 34b of the lower cup portion 34 are joined via the seal member 34c, the lower surface of the upper cup portion 32, the base portion 34a of the lower cup portion 34, the side wall portion 34b, A processing space 36 surrounded by the N2 gas supply member 34g is formed. As shown in FIG. 2, the processing space 36 covers the peripheral edge of the wafer W supported by the spin chuck 22. Here, as shown in FIG. 2, it should be noted that the processing space 36 covers not only the entire surface of the wafer W supported by the spin chuck 22 but only the peripheral edge of the wafer W. The suction pipe 34f communicates with the processing space 36, and the processing liquid and gas in the processing space 36 are sucked and discharged or exhausted by the suction pipe 34f. ing.

  Next, a cup opening / closing mechanism 60 for raising and lowering the upper cup portion 32 and the lower cup portion 34 in the cup 30 will be described in detail with reference to FIGS. 6 and 7. 6 is a side view showing a configuration of a cup opening / closing mechanism 60 that opens and closes the cup 30 in the substrate cleaning apparatus 10, and is a view showing a state when the cup 30 is opened, and FIG. It is a figure which shows a state when the cup 30 is closed.

  As shown in FIGS. 6 and 7, the cup opening / closing mechanism 60 includes an upper support member 62 attached to a side portion of the upper cup portion 32 and a side portion of the lower cup portion 34 so as to face the upper support member 62. The lower support member 64 attached, the elevating cylinder 66 installed so as to be sandwiched between the upper support member 62 and the lower support member 64, and extending and contracting in the vertical direction (vertical direction in FIG. 6), the upper support member 62, and And a guide member 68 for guiding the lower support member 64.

  Here, as shown in FIGS. 6 and 7, a lifting cylinder 66 is provided along the vertical direction between the upper support member 62 and the lower support member 64, and the lifting cylinder 66 expands and contracts in the vertical direction. As a result, the distance between the upper support member 62 and the lower support member 64 changes, whereby the distance between the upper cup portion 32 and the lower cup portion 34 changes. That is, when the elevating cylinder 66 expands and contracts in the vertical direction, the upper cup portion 32 and the lower cup portion 34 are separated from each other as shown in FIG. Each cup portion 32, 34 moves up and down between the position where the upper cup portion 32 and the lower cup portion 34 are joined and the cup 30 is closed.

  Here, a guide rail 68e extending in the vertical direction is attached to the guide member 68 for guiding the upper support member 62 and the lower support member 64. The guide rail 68e is provided with a first stopper 68a, a second stopper 68b, a third stopper 68c, and a fourth stopper 68d in order from the bottom. An upper linear slide 62a is attached to the upper support portion 62, and a lower linear slide 64a is attached to the lower support portion 64. Here, the upper linear slide 62a moves along the guide rail 68e between the third stopper 68c and the fourth stopper 68d, and the lower linear slide 64a includes the first stopper 68a and the second stopper 68a. 68b is moved along the guide rail 68e.

  As shown in FIG. 6, when the upper cup portion 32 and the lower cup portion 34 are in the most separated positions, the upper linear slide 62a contacts the fourth stopper 68d and the lower linear slide 64a contacts the first stopper 68a. It is supposed to be. That is, the first stopper 68a determines the lower limit position of the lower linear slide 64a, that is, the lower limit position of the lower cup portion 34, and the fourth stopper 68d is the upper limit position of the upper linear slide 62a, that is, the upper cup portion. The upper limit position of 32 is determined. As shown in FIG. 7, when the upper cup portion 32 and the lower cup portion 34 are joined, the upper linear slide 62a contacts the third stopper 68c and the lower linear slide 64a contacts the second stopper 68b. It comes to contact. That is, the second stopper 68b determines the upper limit position of the lower linear slide 64a, that is, the upper limit position of the lower cup portion 34, and the third stopper 68c is the lower limit position of the upper linear slide 62a, that is, the upper cup portion. The lower limit position of 32 is determined.

  By providing such a guide member 68, the upper cup portion 32 and the lower cup portion 34 of the cup 30 move up and down in a region within a desired range in the vertical direction.

  Next, a processing liquid supply unit that supplies the processing liquid to the peripheral portion of the wafer W in the processing space 36 will be described with reference to FIGS. As shown in FIGS. 1 and 2, the treatment liquid supply mechanism 40 includes a motor 42 and a ball screw that is provided at the base end of the motor 42 and expands and contracts in the horizontal direction (left and right direction in FIG. 1) by driving the motor 42. 44, a treatment liquid supply member 46 attached to the tip of the ball screw 44 (left end in FIG. 1), and a fixing member 48 for fixing the motor 42 on the base 20.

  As shown in FIGS. 1 and 2, the ball screw 44 is provided in the motor 42 so as to extend in the horizontal direction (the left-right direction in FIG. 1). It expands and contracts in the direction. A processing liquid supply member 46 is attached to the tip of the ball screw 44, and the processing liquid supply member 46 also moves integrally with the ball screw 44 in the horizontal direction of FIG. 1 along the radial direction of the wafer W. It is like that. As shown in FIGS. 1 and 2, the processing liquid supply member 46 has a substantially U-shape that sandwiches the wafer W, and a chemical solution or the like is applied to the wafer W sandwiched between the U-shaped gap portions 46n. A treatment liquid such as pure water and N 2 gas are supplied.

  Here, as described above, the side wall member 34b of the lower cup portion 34 is provided with the through hole 34d. However, the height of the processing liquid supply member 46 is such that the cup 30 is closed as shown in FIG. At this time, the size is set such that the processing liquid supply member 46 can pass through the through hole 34d. That is, when the cup 30 is closed as shown in FIG. 2, the processing liquid supply member 46 moves in the left-right direction in FIG. 1 so as to pass through the through hole 34 d of the lower cup portion 34. . More specifically, the processing liquid supply member 46 has a retracted position where the processing liquid supply member 46 is retracted to the outside of the processing space 36 as shown in FIG. As shown in FIG. 2, the processing liquid supply member 46 reciprocates through the through hole 34 d between the processing position where the processing liquid supply member 46 is positioned in the processing space 36. As shown in FIGS. 1 and 2, the retracted position of the processing liquid supply member 46 is located outside the processing position with respect to the spin chuck 22. When the processing liquid supply member 46 is in the processing position when the wafer W is supported by the spin chuck 22, the wafer W is sandwiched between the U-shaped gap portions 46 n of the processing liquid supply member 46. (See FIG. 2).

  Details of the configuration of the processing liquid supply member 46 will be described with reference to FIGS. 4 and 5. As shown in FIGS. 4 and 5, the processing liquid supply member 46 includes a pair of upper and lower N2 gas supply nozzles 46a, a pair of upper and lower pure water supply nozzles 46b, and a pair of upper and lower chemical liquids in order from the closest to the center of the wafer W. Supply nozzles 46c are provided so as to sandwich the wafer W, respectively.

  The pair of upper and lower N2 gas supply nozzles 46a are connected to an N2 gas supply source (not shown) via an N2 gas supply pipe 46g provided inside the processing liquid supply member 46, respectively. 46 a is configured to inject N 2 gas sent from the N 2 gas supply source to the peripheral portions of the front and back surfaces of the wafer W. The pair of upper and lower pure water supply nozzles 46b is connected to a pure water supply source (not shown) via a pure water supply pipe 46h provided inside the processing liquid supply member 46, respectively. The supply nozzle 46 b is configured to inject pure water sent from a pure water supply source to the peripheral portions on both the front and back surfaces of the wafer W. As shown in FIG. 5, the pure water supply nozzle 46b is provided on the upstream side of the chemical solution supply nozzle 46c in the rotation direction of the wafer W (see the arrow in FIG. 5). Further, the pair of upper and lower chemical liquid supply nozzles 46c are connected to a chemical liquid supply source (not shown) via a chemical liquid supply pipe 46i provided inside the processing liquid supply member 46, respectively. The chemical solution sent from the chemical solution supply source is sprayed to the peripheral portions of the front and back surfaces of the wafer W. As shown by the arrows in FIGS. 4 and 5, each nozzle 46a, 46b, 46c injects N2 gas or processing liquid toward the outside of the wafer W in the radial direction (right side in FIGS. 4 and 5). It is like that.

  Further, the processing liquid supply member 46 is provided with a suction pipe 46d for sucking the liquid or gas in the U-shaped gap portion 46n. A suction device (not shown) is provided at the proximal end portion of the suction tube 46d, and the liquid and gas in the U-shaped gap portion 46n are sucked by the suction device through the suction tube 46d. Yes.

  As shown in FIG. 1, the treatment liquid supply member 46 is configured to close the through hole 34 d when the treatment liquid supply member 46 is inserted into the through hole 34 d of the side wall member 34 b in the lower cup portion 34. An annular lid member 46p is provided. Further, a seal member 46q made of, for example, an O-ring such as rubber is provided on the surface of the lid member 46p on the cup 30 side. When the lid member 46p closes the through hole 34d of the side wall member 34b, Sealing is performed by the sealing member 46q between the lid member 46p and the side wall member 34b. Thus, when the processing liquid supply member 46 is inserted into the processing space 36, the space between the processing liquid supply member 46 and the lower cup portion 34 is sealed by the seal member 46 q.

  Next, a position adjustment unit that adjusts the position of the wafer W with respect to the spin chuck 22, specifically, a centering of the wafer W will be described with reference to FIGS. 1 to 3.

  As shown in FIGS. 1 and 2, the wafer position adjusting mechanism 70 includes a base portion 72, a main body portion 74 provided on the base portion 72, an arm 76 provided on the main body portion 74, and a tip of the arm portion. And a position adjusting pin 78a provided on the head. Here, the base portion 72 of the wafer position adjusting mechanism 70 is attached to a position opposite to the processing liquid supply mechanism 40 with respect to the lower cup portion 34 of the cup 30. That is, the wafer position adjusting mechanism 70 is moved up and down integrally with the lower cup portion 34 of the cup 30. A guide rail 72 a extending in the radial direction of the wafer W supported by the spin chuck 22 is provided on the upper surface of the base portion 72. A linear rail provided at the lower end of the main body portion 74 is provided on the guide rail 72 a. The slide 74a moves in the left-right direction in FIG.

Further, an arm 76 is attached to the main body portion 74, and a force is constantly applied to the arm 76 toward the spin chuck 22 by a pressing mechanism (not shown) such as a spring provided in the main body portion 74. It is like that. As shown in FIGS. 1 and 2, the arm 76 passes through a through hole 34 e provided in the side wall member 34 b of the lower cup portion 34 of the cup 30. Further, a flange member 76a for closing the through hole 34e is attached to the arm 76, and a seal between the arm 76 and the side wall member 34b is made by the flange member 76a.
At the tip of the arm 76, for example, a small columnar position adjusting pin 78a is rotatably provided. The position adjusting pins 78a are used for adjusting the position of the wafer W with respect to the spin chuck 22.

  On the other hand, as shown in FIG. 3, a pair of position adjusting pins 78b and 78c are also provided at a distance from the tip of the processing liquid supply member 46 of the processing liquid supply mechanism 40 described above. These position adjustment pins 78b and 78c are also formed of, for example, a small cylindrical shape like the position adjustment pin 78a, and are used to adjust the position of the wafer W with respect to the spin chuck 22. .

  These position adjustment pins 78a, 78b, 78c are movable along the radial direction of the wafer W supported by the spin chuck 22, more specifically, along the left-right direction of FIG. These position adjustment pins 78a, 78b, 78c are in contact with the side surface of the wafer W. Here, as shown in FIG. 3, the position of the wafer W with respect to the spin chuck 22 is adjusted by the wafer W being sandwiched between the position adjustment pins 78 a, 78 b, 78 c.

  More specifically, the processing liquid supply member 46 is located closer to the spin chuck 22 than the processing position in addition to the processing position and the retracted position as described above, and the position adjusting pins 78b and 78c are positioned at the position of the wafer W. It also moves to a centering position that is suitable for alignment. When the processing liquid supply member 46 is in the centering position, the main body portion 74 of the wafer position adjusting mechanism 70 moves toward the spin chuck 22, that is, moves to the right in FIG. 3 and is attached to the arm 76. When the position adjusting pin 78a presses the wafer W toward the spin chuck 22, the wafer W is sandwiched between the position adjusting pins 78a, 78b, and 78c, thereby aligning the wafer W with the spin chuck 22. Will be done.

  A gas injection / suction mechanism 50 is provided above the base 20 and below the wafer W supported by the spin chuck 22. The gas injection / suction mechanism 50 includes a gas injection / suction member 52 provided at a slight distance below the wafer W supported by the spin chuck 22 and a gas injection / suction member 52 provided on the base 20. And a fixing member 54 for fixing.

  On the upper surface of the gas injection / suction member 52, a plurality of gas injection tools for injecting a gas such as N2 gas upward and a plurality of gas suction tools for inhaling the gas downward are provided. Here, the gas injection tool and the gas suction tool are uniformly provided on the upper surface of the gas injection / suction member 52, respectively, and the upward gas injection force by the gas injection tool and the downward force by the gas suction tool are provided. The gas suction force is almost the same. As a result, the vertical swing of the wafer W supported by the spin chuck 22, particularly the vertical swing of the peripheral portion of the wafer W can be suppressed.

  Next, a method for cleaning the wafer W by the substrate cleaning apparatus 10 having such a configuration will be described.

  First, before the wafer W is sent to the substrate cleaning apparatus 10, the cup opening / closing mechanism 60 separates the upper cup portion 32 and the lower cup portion 34 of the cup 30 in the vertical direction, and the cup 30 is opened as shown in FIG. It is assumed that In a state where the cup 30 is opened, the wafer W is transferred from the outside of the substrate cleaning apparatus 10 to the inside of the cup 30 (a region between the upper cup portion 32 and the lower cup portion 34) by a transfer arm (not shown). Then, the wafer W is placed on the support plate 22a of the spin chuck 22 by the transfer arm. At this time, the alignment of the wafer W with respect to the spin chuck 22 has not been performed yet.

Next, the cup opening / closing mechanism 60 lowers the upper cup portion 32 of the cup 30 and raises the lower cup portion 34 so that the cup portions 32 and 34 are joined, and the cup 30 is closed as shown in FIG. It becomes. In this state, the processing liquid supply member 46 of the processing liquid supply mechanism 40 is moved from the retracted position as shown in FIG. 1 to the centering position as shown in FIG. At this time, the processing liquid supply member 46 is moved to the centering position as shown in FIG. 3 so as to approach the spin chuck 22 (the centering position of the processing liquid supply member 46 as shown in FIG. The position is closer to the spin chuck 22 than the processing position shown in FIG. When the processing liquid supply member 46 is at the centering position as shown in FIG. 3, the main body portion 74 of the wafer position adjusting mechanism 70 moves toward the spin chuck 22 and is provided at the tip of the arm 76 in accordance with this. The position adjusting pin 78a thus moved also moves toward the spin chuck 22 along the radial direction of the wafer W (that is, to the right in FIG. 3). When the position adjustment pin 78a comes into contact with the wafer W, the position adjustment pin 78a presses the wafer W in the right direction in FIG. Thus, the wafer W is sandwiched between the position adjustment pins 78a, 78b, 78c, and the wafer W is aligned with the spin chuck 22, that is, the wafer W is centered. After the alignment of the wafer W with respect to the spin chuck 22 is performed, suction is performed by a suction device communicating with the through hole 22c of the spin chuck 22, and the wafer W on the support plate 22a is fixed to the support plate 22a. It will be. After the wafer W is fixed to the support plate 22a, the processing liquid supply member 46 returns from the centering position as shown in FIG. 3 to the processing position as shown in FIG. 2, and the position adjustment pins 78b and 78c are moved to the wafer W. Separate from. Further, the main body portion 74 of the wafer position adjusting mechanism 70 is retracted away from the spin chuck 22, and the position adjusting pins 78 a are separated from the wafer W.

  Next, the spin chuck 22 is rotated by the spin chuck drive motor 26 as shown by the arrows in FIGS. 1 and 2, and the wafer W supported by the spin chuck 22 is also rotated integrally. At this time, the gas injection tool of the gas injection / suction member 52 injects a gas such as N 2 gas toward the wafer W, and at the same time, the gas suction tool of the gas injection / suction member 52 sucks the gas downward. Is done.

  Then, the chemical solution is ejected from the chemical solution supply nozzle 46 c of the processing solution supply member 46 at the processing position as shown in FIG. In this way, the chemical treatment of the peripheral portion of the wafer W is first performed. During such chemical processing of the wafer W, the spin chuck 22 is rotated at a low speed. Next, when the chemical processing of the peripheral portion of the wafer W is completed, pure water is jetted from the pure water supply nozzle 46b of the processing liquid supply member 46 to the peripheral portions of the front and back surfaces of the wafer W, and the chemical solution is removed. The spin chuck 22 is rotated at a low speed even during the rinsing process of the wafer W. Thereafter, the supply of pure water is stopped and the peripheral portion of the wafer W is dried by rotating the spin chuck 22 at a high speed.

  It should be noted that N2 gas is constantly injected from the N2 gas supply nozzle 46a of the processing liquid supply nozzle 46 during the chemical processing, rinsing processing and drying processing of the wafer W as described above. As a result, as shown in FIG. 4, in the chemical processing or rinsing processing of the wafer W, the chemical or pure water sprayed from the nozzles 46 b and 46 c is discharged from the U-shaped gap portion 46 n of the processing liquid supply member 46. Outflow to the outside can be suppressed. Further, in the drying process of the wafer W, the drying of the wafer W can be promoted by spraying N2 gas from the N2 gas supply nozzle 46a.

  Further, during the chemical processing, rinsing processing, and drying processing of the wafer W as described above, the liquid or gas in the U-shaped gap portion 46n is sucked by the suction pipe 46d of the processing liquid supply member 46. Therefore, the chemical liquid ejected from the chemical liquid supply nozzle 46c, the pure water ejected from the pure water supply nozzle 46b, and the chemical liquid gas and water vapor generated by the evaporation thereof are sucked by the suction pipe 46d. Thus, it is possible to prevent these processing liquids and gases from flowing out of the processing space 36 to the outside.

  Further, during the chemical liquid processing, rinsing processing, and drying processing of the wafer W as described above, N 2 gas is injected toward the processing space 36 from the N 2 gas supply nozzle 34 h provided in the lower cup portion 34 of the cup 30. Further, during the chemical processing, rinsing processing and drying processing of the wafer W as described above, N 2 gas is supplied downward from the through hole 32 a of the upper cup portion 32 of the cup 30, and this N 2 gas is directed to the processing space 36. It has become. Thereby, it is possible to further suppress the processing liquid and the gas in the processing space 36 from flowing out of the processing space 36 to the outside.

  Further, during the chemical processing, rinsing processing and drying processing of the wafer W as described above, a gas injection tool of the gas injection / suction member 52 injects a gas such as N2 gas toward the wafer W, and at the same time, the gas injection. The gas is sucked downward by the gas suction tool of the suction member 52. For this reason, while the wafer W is being rotated, the vertical swing of the wafer W, in particular, the vertical swing of the peripheral portion of the wafer W can be suppressed.

  After the drying process of the wafer W is completed, the rotation of the wafer W is stopped, and the injection of N2 gas from the N2 gas supply nozzle 46a of the processing liquid supply member 46 is stopped. At this time, the suction by the suction pipe 46d and the suction pipe 34f and the injection of N2 gas from the N2 gas supply nozzle 34h are also stopped. Further, gas injection and suction by the gas injection / suction member 52 are also stopped. Then, the suction by the through hole 22c is also stopped, and the fixation of the wafer W to the support plate 22a of the spin chuck 22 is released.

  Thereafter, the cup 30 is opened by the cup opening / closing mechanism 60, and the wafer W is transferred from the cup 30 to the outside by a transfer arm (not shown). In this way, a series of cleaning steps of the wafer W by the substrate cleaning apparatus 10 is completed.

  As described above, according to the substrate cleaning apparatus 10 and the substrate cleaning method of the present embodiment, the processing space 36 that covers the peripheral edge of the wafer W is formed by the upper cup portion 32 and the lower cup portion 34 of the cup 30. The processing liquid supply member 46 is inserted into the processing space 36 from the outside, and the processing liquid supply member 46 inserted into the processing space 36 is rotated around the wafer W while rotating the wafer W. To supply. Here, the processing space 36 formed as described above covers only the peripheral edge of the wafer W, not the entire surface of the wafer W supported by the spin chuck 22. In this way, the processing space 36 for cleaning the wafer W is formed, and the processing space 36 is miniaturized and simplified, so that the amount of chemical gas generated by the evaporation of the chemical liquid is reduced. In addition, it is possible to easily control the exhaust of the gas of the chemical solution. Further, since the chemical liquid is prevented from flowing out of the processing space 36, peripheral units other than the cup 30 and the processing liquid supply member 46, specifically, for example, the spin chuck 22, the gas injection / suction mechanism 50, and the like. There is no need to consider chemical resistance. Further, since the processing liquid supply member 46 is normally outside the cup 30, the operator can easily perform maintenance on the processing liquid supply member 46, and the maintainability of the processing liquid supply member 46 is improved. To do.

  Further, since the processing liquid supply member 46 supplies chemical liquid and pure water to the peripheral portions on both the front and back surfaces of the wafer W, cleaning such as chemical processing and rinsing processing is performed on the peripheral portions on both front and back surfaces of the wafer W. Processing can be performed.

  Further, when the processing liquid supply member 46 is inserted into the processing space 36, the gap between the processing liquid supply member 46 and the lower cup portion 34 of the cup 30 is sealed by the lid member 46p and the seal member 46q. Therefore, it is possible to prevent the chemical liquid and the gas in the processing space 36 from flowing out from the through hole 34d.

  Further, outside the processing space 36, an N 2 gas supply nozzle 34 h that injects N 2 gas toward the processing space 36 is provided in the lower cup portion 34 of the cup 30. The N2 gas is injected from the N2 gas supply nozzle 34h toward the processing space 36, so that the chemical solution and the gas in the processing space 36 do not flow out of the processing space 36 to the outside. Further, in addition to the chemical liquid supply nozzle 46c and the pure water supply nozzle 46b, the processing liquid supply member 46 is provided with an N2 gas supply nozzle 46a, and N2 gas is injected into the processing space 36 from the N2 gas supply nozzle 46a. As a result, the chemical solution or gas in the processing space 36 does not flow out of the processing space 36.

  In addition, a suction pipe 34 f that communicates with the processing space 36 and sucks liquid or gas from the processing space 36 to discharge or exhaust is provided in the lower cup portion 34 of the cup 30. For this reason, by draining or exhausting the liquid from the processing space 36 by the suction pipe 34f, it is possible to further prevent the chemical liquid and the gas in the processing space 36 from flowing out of the processing space 36 to the outside.

  Further, since the wafer position adjusting mechanism 70 is provided, the wafer W can be easily aligned with the spin chuck 22. In particular, the wafer W is aligned with the spin chuck 22, that is, the wafer W is centered by the position adjustment pins 78 a provided on the wafer position adjustment mechanism 70 and the position adjustment pins 78 b and 78 c provided on the processing liquid supply member 46. Therefore, the centering of the wafer W can be accurately performed with a simple configuration.

  The substrate cleaning apparatus and the substrate cleaning method according to the present invention are not limited to the above-described embodiments, and various changes can be made.

  For example, the processing liquid supply member for supplying a processing liquid such as a chemical solution or pure water to the peripheral portion of the wafer W is not limited to one that supplies the processing liquid to the peripheral portions on both front and back surfaces of the wafer W, The processing liquid may be supplied to the peripheral edge only on the front surface (upper surface) or back surface (lower surface) of the wafer W. Further, as another processing liquid supply member, instead of simultaneously supplying the processing liquid to the peripheral portions of the front and back surfaces of the wafer W, the processing liquid is selectively supplied to the peripheral portions of the front and back surfaces of the wafer W. It may be possible.

  Further, instead of using the cup 30 composed of the upper cup portion 32 and the lower cup portion 34 as described above as a processing space forming portion for forming a processing space that covers the peripheral portion of the wafer W supported by the spin chuck 22. 8 and 9, a substantially U-shaped member that covers a part of the peripheral edge of the wafer W supported by the spin chuck 22 can be used.

  A substrate cleaning apparatus according to such a modification will be described with reference to FIGS. FIG. 8 is a side view showing another configuration of the substrate cleaning apparatus according to the present invention, and shows a state when the processing liquid supply member is in the retracted position. FIG. 9 shows the substrate cleaning shown in FIG. In an apparatus, it is a side view which shows a state when a process liquid supply member exists in a process position. In the embodiment shown in FIGS. 8 and 9, the same parts as those of the substrate cleaning apparatus shown in FIGS.

  As shown in FIGS. 8 and 9, a substantially U-shaped processing space forming mechanism is used as a processing space forming portion that forms a processing space 88 that covers a part of the peripheral edge of the wafer W supported by the spin chuck 22. 80 is used. The processing space forming mechanism 80 fixes the substantially U-shaped member 81 provided to cover a part of the peripheral edge of the wafer W supported by the spin chuck 22, and the substantially U-shaped member 81 to the base 20. And a fixing member 82. A U-shaped gap portion of the substantially U-shaped member 81 is a processing space 88.

  The substantially U-shaped member 81 includes an upper portion 81a and a lower portion 81b that are separable from each other. A lower portion 81 b of the substantially U-shaped member 81 is fixed to the base 20 by a fixing member 82. On the other hand, the upper portion 81a of the substantially U-shaped member 81 is moved up and down in the vertical direction (up and down direction in FIG. 8) by an elevating mechanism (not shown). When the wafer W is placed on the support plate 22a of the spin chuck 22 by the transfer arm, or when the wafer W is lifted by the transfer arm from the support plate 22a, the upper portion of the substantially U-shaped member 81. 81a is greatly spaced upward from the lower portion 81b.

  The lower portion 81b of the substantially U-shaped member 81 is provided with a through-hole 83 through which a processing liquid supply member 96 of a processing liquid supply mechanism 90 described later passes in the horizontal direction. In addition, a suction pipe 84 that sucks the liquid or gas in the processing space 88 that is a U-shaped gap portion is provided in the lower portion 81 b of the substantially U-shaped member 81. A suction device (not shown) is provided at the base of the suction tube 84, and the liquid or gas in the processing space 88 is sucked through the suction tube 84 by the suction device.

  Further, a pair of upper and lower N2 gas supply nozzles 85 and 86 are provided on the upper portion 81 a and the lower portion 81 b of the substantially U-shaped member 81 so as to sandwich the wafer W supported by the spin chuck 22. The N 2 gas supply nozzles 85 and 86 are provided closer to the spin chuck 22 than the processing space 88 of the substantially U-shaped member 81, and jet N 2 gas toward the processing space 88.

  As described above, the N2 gas supply nozzles 85 and 86 for injecting N2 gas toward the processing space 88 are provided outside the processing space 88. The N2 gas is supplied from the N2 gas supply nozzles 85 and 86 to the processing space 88. The chemical liquid and the gas in the processing space 88 are prevented from flowing out from the processing space 88 by being injected toward the outside.

  Further, in the substrate cleaning apparatus as shown in FIG. 8 and FIG. 9, the processing as shown in FIG. 1 to FIG. Instead of the liquid supply mechanism 40, a processing liquid supply mechanism 90 having another configuration is used. Similarly to the processing liquid supply mechanism 40, the processing liquid supply mechanism 90 can be inserted into the processing space 88 formed by the processing space forming mechanism 80 from the outside, and the peripheral edge of the wafer W in the processing space 88. A chemical solution (for example, hydrofluoric acid, which is an aqueous solution of hydrogen fluoride) or pure water, and a nitrogen gas (N2 gas) are supplied to the unit. The configuration of the processing liquid supply mechanism 90 as shown in FIGS. 8 and 9 will be described below.

  The processing liquid supply mechanism 90 includes a support member 92, a processing liquid supply member 96 attached to the top of the support member 92, and a base member 94 provided at the lower end of the support member 92.

  Here, the base 20 is provided with guide rails 24 extending in the left-right direction in FIG. 8 along the radial direction of the wafer W supported by the spin chuck 22, and the base member 94 of the processing liquid supply mechanism 90 is provided as a base member 94. It moves on the guide rail 24 in the left-right direction in FIG. Stoppers 24 a and 24 b for restricting the movement range of the base member 94 are provided at both ends of the guide rail 24.

  The processing liquid supply member 96 attached to the upper part of the column member 92 has substantially the same configuration as the processing liquid supply member 46 as shown in FIGS. 1 to 7, particularly FIGS. 4 and 5. That is, the processing liquid supply member 96 moves integrally with the support member 92 and the base member 94 in the left-right direction in FIG. 8 along the radial direction of the wafer W. The processing liquid supply member 96 is substantially U-shaped so as to sandwich the wafer W as shown in FIGS. 8 and 9, and is opposite to the wafer W sandwiched between the U-shaped gap portions 96n. Thus, a processing solution such as a chemical solution or pure water, and N2 gas are supplied.

  Here, as described above, the lower portion 81b of the substantially U-shaped member 81 is provided with the through hole 83. The height of the processing liquid supply member 96 is such that the processing liquid supply member 96 has the through hole 83. It is set to a size that can pass through. That is, the treatment liquid supply member 96 moves in the left-right direction in FIG. 8 so as to pass through the through hole 83 of the substantially U-shaped member 81. More specifically, the processing liquid supply member 96 is located at the retracted position where the processing liquid supply member 96 is retracted to the outside of the processing space 88 as shown in FIG. 8 when the base member 94 moves on the guide rail 24. 9 and the processing position where the processing liquid supply member 96 is positioned in the processing space 88 as shown in FIG. As shown in FIGS. 8 and 9, the retracted position of the processing liquid supply member 96 is located outside the processing position with respect to the spin chuck 22. When the processing liquid supply member 96 is in the processing position when the wafer W is supported by the spin chuck 22, the wafer W is sandwiched between the U-shaped gap portions 96 n of the processing liquid supply member 96. ing.

  Further, as shown in FIGS. 8 and 9, the processing liquid supply member 96 is provided with a seal member 96a made of an O-ring such as rubber, and the processing liquid supply member 96 is a substantially U-shaped member. When the processing liquid supply member 96 is inserted into the processing space 88 through the through-hole 83 of 81 and moved to the processing position, the seal member 96a is interposed between the processing liquid supply member 96 and the substantially U-shaped member 81. The seal is made by.

  As described above, also in the substrate cleaning apparatus as shown in FIGS. 8 and 9, the processing space 88 that covers a part of the peripheral portion of the wafer W by the processing space forming mechanism 80 having the substantially U-shaped member 81. The processing liquid supply member 96 is inserted into the processing space 88 from the outside, and the wafer W is rotated while the processing liquid supply member 96 is inserted into the processing space 88 while a chemical solution, pure water, or the like is added to the peripheral portion of the wafer W. The processing liquid is supplied. As described above, the processing space 88 for cleaning the wafer W is formed, and the processing space 88 is miniaturized and simplified, so that the amount of chemical gas generated by the evaporation of the chemical liquid is reduced. In addition, it is possible to easily control the exhaust of the gas of the chemical solution. Further, since the chemical liquid is prevented from flowing out of the processing space 88, the peripheral units other than the substantially U-shaped member 81 and the processing liquid supply member 96, specifically, for example, the spin chuck 22 and the like are resistant to chemicals. There is no need to consider sex. Further, since the processing liquid supply member 96 is normally outside the substantially U-shaped member 81, the maintenance of the processing liquid supply member 96 can be easily performed. Improves.

  Further, when the processing liquid supply member 96 is inserted into the processing space 88, the seal member 96a seals between the processing liquid supply member 96 and the substantially U-shaped member 81. It is possible to prevent the chemical solution and the gas in the space 88 from flowing out from the through hole 83.

  In addition, outside the processing space 88, the substantially U-shaped member 81 is provided with a pair of upper and lower N 2 gas supply nozzles 85 and 86 that inject N 2 gas toward the processing space 88. The N2 gas is ejected from the N2 gas supply nozzles 85 and 86 toward the processing space 88, so that the chemical solution and the gas in the processing space 88 do not flow out from the processing space 88 to the outside. Yes.

  A processing space forming mechanism 80 is provided with a suction pipe 84 that communicates with the processing space 88 and sucks liquid or gas from the processing space 88 to discharge or exhaust it. For this reason, by performing drainage or exhaust from the processing space 88 by the suction pipe 84, it is possible to further prevent the chemical liquid and the gas in the processing space 88 from flowing out of the processing space 36 to the outside.

  Further, the configuration of the other processing space forming unit is limited to a processing space forming mechanism 80 that covers a part of the peripheral edge of the wafer W supported by the spin chuck 22 as shown in FIGS. However, as another processing space forming mechanism, the cross section has a substantially U-shape as shown in FIGS. 8 and 9, and not the entire peripheral portion of the wafer W supported by the spin chuck 22. A processing space forming mechanism that covers the surface may be used.

1 is a side view showing a configuration of a substrate cleaning apparatus according to an embodiment of the present invention, and shows a state when a cup for accommodating a wafer is opened and a processing liquid supply member is in a retracted position. It is a side view which shows the structure of the board | substrate cleaning apparatus of one embodiment of this invention, Comprising: It is a figure which shows a state when a cup closes after accommodating a wafer, and a process liquid supply member moves to a process position. It is a schematic block diagram which shows the outline of a structure of a wafer position adjustment mechanism which looked at the board | substrate cleaning apparatus shown in FIG. 1 and FIG. 2 from upper direction. FIG. 3 is a side sectional view showing details of a configuration of a processing liquid supply member in the substrate cleaning apparatus shown in FIGS. 1 and 2 together with a wafer. It is the top view which looked at the process liquid supply member shown in FIG. 4 from upper direction. It is a side view which shows the structure of the cup opening / closing mechanism which opens and closes the cup in the board | substrate washing | cleaning apparatus shown in FIG. 1 and FIG. 2, Comprising: It is a figure which shows a state when a cup is opened. It is a side view which shows the structure of the cup opening / closing mechanism which opens and closes the cup in the board | substrate washing | cleaning apparatus shown in FIG. 1 and FIG. 2, Comprising: It is a figure which shows a state when a cup is closed. It is a side view which shows the other structure of the substrate cleaning apparatus in this invention, Comprising: It is a figure which shows a state when a process liquid supply member exists in a retracted position. FIG. 9 is a side view showing the state when the processing liquid supply member is in the processing position in the substrate cleaning apparatus shown in FIG. 8.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Substrate cleaning apparatus 20 Base 22 Spin chuck 22a Support plate 22b Rotor 22c Through hole 22d Pulley 24 Guide rail 24a, 24b Stopper 26 Spin chuck drive motor 28 Circulation belt 30 Cup 32 Upper cup part 32a Through hole 34 Lower cup part 34a Base Member 34b Side wall member 34c Seal member 34d Through hole 34e Through hole 34f Suction tube 34g N2 gas supply member 34h N2 gas supply nozzle 36 Processing space 40 Processing liquid supply mechanism 42 Motor 44 Ball screw 46 Processing liquid supply member 46a N2 gas supply nozzle 46b Pure Water supply nozzle 46c Chemical liquid supply nozzle 46d Suction pipe 46g N2 gas supply pipe 46h Pure water supply pipe 46i Chemical liquid supply pipe 46n Gap portion 46p Lid member 46q Seal member 48 Fixed member 50 Gas injection / suction mechanism 52 Gas injection / suction member 54 Fixed member 60 Cup opening / closing mechanism 62 Upper support member 62a Upper linear slide 64 Lower support member 64a Lower linear slide 66 Lifting cylinder 68 Guide member 68a First stopper 68b Second stopper 68c Third stopper 68d Fourth stopper 68e guide rail 70 wafer position adjusting mechanism 72 base portion 72a guide rail 74 main body portion 74a linear slide 76 arm 76a flange members 78a, 78b, 78c position adjusting pin 80 processing space forming mechanism 81 substantially U-shaped member 81a upper portion 81b lower Portion 82 Fixed member 83 Through-hole 84 Suction tube 85, 86 N2 gas supply nozzle 88 Processing space 90 Processing liquid supply mechanism 92 Support member 94 Base member 96 Processing liquid supply member 96a Seal member 96n

Claims (16)

A substrate cleaning apparatus for cleaning a peripheral portion of a substrate to be processed,
A rotation support unit that supports and rotates the substrate to be processed;
A processing space forming unit that forms a processing space that covers a peripheral portion of the substrate to be processed supported by the rotation support unit;
A processing liquid supply section that can be inserted into the processing space formed by the processing space forming section from the outside, and that supplies the processing liquid to the peripheral edge of the substrate to be processed in the processing space;
A substrate cleaning apparatus comprising:   2. The processing space formed by the processing space forming unit covers not only the entire surface of the substrate to be processed supported by the rotation support unit but only the peripheral portion of the substrate to be processed. The substrate cleaning apparatus as described.   The substrate cleaning apparatus according to claim 1, wherein the processing liquid supply unit supplies the processing liquid to peripheral portions on both front and back surfaces of the substrate to be processed. The treatment space forming part is provided with an opening through which the treatment liquid supply part can pass,
The processing liquid supply unit opens the opening between a processing position where the processing liquid supply unit is located in the processing space and a retreat position where the processing liquid supply unit is retracted outside the processing space. It is free to reciprocate via
The space between the processing liquid supply unit and the processing space forming unit is sealed when the processing liquid supply unit is inserted into the processing space. The substrate cleaning apparatus according to any one of the above.   A gas supply unit that injects gas toward the processing space is provided outside the processing space, and gas is injected from the gas supply unit toward the processing space. The substrate cleaning apparatus according to claim 1, wherein the processing liquid or the gas of the processing liquid is prevented from flowing out of the processing space.   6. The apparatus according to claim 1, further comprising a suction unit that communicates with the processing space and sucks the processing liquid or gas from the processing space to discharge or exhaust the liquid. Substrate cleaning device.   The substrate cleaning apparatus according to claim 1, further comprising a position adjustment unit that adjusts a position of the substrate to be processed with respect to the rotation support unit.   The position adjusting unit includes a plurality of position adjusting members that can contact the side surface of the substrate to be processed, and at least one position adjusting member is movable toward the substrate to be processed supported by the rotation support unit. The substrate cleaning apparatus according to claim 7, wherein the position of the substrate to be processed is adjusted with respect to the rotation support portion when the substrate to be processed is sandwiched between the plurality of position adjusting members.   At least one position adjusting member among the plurality of position adjusting members is provided in the processing liquid supply unit, and the processing liquid supply unit adjusts the position of the substrate to be processed with respect to the rotation support unit by the position adjusting unit. 9. The substrate cleaning according to claim 8, wherein the position adjustment pin provided in the processing liquid supply unit is moved to a position suitable for alignment of the substrate to be processed. apparatus.   Gas injection / suction provided at a distance below the substrate to be processed supported by the rotation support part and having a gas injection part for injecting gas upward and a gas suction part for sucking gas downward The substrate cleaning apparatus according to claim 1, further comprising a section. A substrate cleaning method for cleaning a peripheral portion of a substrate to be processed,
Forming a processing space that covers the peripheral edge of the substrate to be processed by the processing space forming unit;
Inserting a processing liquid supply unit into the processing space from the outside;
Supplying a processing liquid to a peripheral portion of the substrate to be processed by the processing liquid supply unit inserted into the processing space while rotating the substrate to be processed;
A substrate cleaning method comprising:   12. The substrate cleaning method according to claim 11, wherein the processing space formed by the processing space forming part covers not only the entire surface of the substrate to be processed but the peripheral edge of the substrate to be processed. The treatment space forming part is provided with an opening through which the treatment liquid supply part can pass,
When the processing liquid supply unit is inserted into the processing space from the outside, the processing liquid supply unit is positioned in the processing space from the retracted position where the processing liquid supply unit is retracted to the outside of the processing space. The substrate cleaning method according to claim 11, wherein the processing liquid supply unit is moved to a position through the opening.   14. The gas according to claim 11, wherein gas is jetted from the outside of the processing space toward the processing space so that the processing liquid in the processing space or the gas of the processing liquid does not flow out to the external region. The substrate cleaning method according to any one of claims.   15. The method according to claim 11, wherein when the processing liquid is supplied to the peripheral portion of the substrate to be processed by the processing liquid supply unit, the processing liquid or gas is sucked from the processing space to be drained or exhausted. The substrate cleaning method according to any one of claims.   The gas injection / suction unit provided at a distance below the substrate to be processed injects the gas upward and sucks the gas downward. The substrate cleaning method according to Item.

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