JP2009140844A - Device manufacturing method and device - Google Patents

Abstract

An object of the present invention is to provide an apparatus manufacturing method and apparatus that can be manufactured by a simple process.
A light-emitting device is attached to a substrate, a line-shaped light-emitting element provided on the substrate and including an organic layer, and the light-emitting element interposed therebetween. And a sealing plate 4. First, an anode is formed on the substrate 2, and then the organic material is lined through the sealing region 11 so that a part of the organic material extends from the sealing region 11 where the sealing plate 4 is bonded and sealed. The linear organic layer 5 is formed. Next, the cathode 6 is formed on the organic layer 5. Next, a sealing material 12 is applied to the surface of the sealing plate 4 facing the substrate 2, and the organic layer 5 is sealed with the light emitting element 3 sandwiched between both ends of the organic layer 5 extending out of the sealing region 11. The plate 4 is bonded to the substrate 2.
[Selection] Figure 1

Description

  The present invention relates to an apparatus including a line-shaped element including an organic layer and a method for manufacturing the apparatus.

  As a method of manufacturing a device by forming a linear organic EL (Electro Luminescence) element including an organic layer on the surface of a substrate such as a glass substrate, a hole transport material having a predetermined pattern shape on the substrate is provided. There is known a method of applying a coating liquid containing organic EL material or the like. As a method of applying the coating liquid, there is a method of using a nozzle coating apparatus that continuously discharges the coating liquid from the nozzle.

  In nozzle coating, a predetermined pressure is continuously applied to the coating solution by a pump, and the nozzle is scanned on the substrate while the coating solution is continuously discharged from the nozzle. The coating solution is continuously applied. As described above, in the nozzle application, the application liquid is applied while being continuously discharged from the nozzle, so that the application liquid can be applied at a high speed. However, when the coating liquid is continuously discharged from the nozzle as in the case of nozzle coating, the responsiveness when starting (on) or stopping (off) the coating liquid is low, and it is difficult to discharge the coating liquid. It is usually difficult to switch on / off with high accuracy. Therefore, it is difficult to control to start discharge at a predetermined position or stop discharge at a predetermined position while scanning the nozzle on the substrate, and the coating liquid can be selectively applied only to an intended region. Is difficult to apply. Therefore, in nozzle application, after applying to the area where application is unnecessary, the application liquid applied to the area where application is unnecessary is removed, and the application liquid is selectively applied only to the intended area. Yes. Specifically, the coating was started in advance before reaching the start point of coating, the coating solution was continuously applied, and after the end point of coating was stopped, the coating was stopped and then applied unnecessarily. The coating solution is removed.

  As a method for removing an unnecessarily applied coating solution, there is a method using a masking tape. Specifically, before applying the coating solution, a masking tape is applied in advance to an area on the substrate that does not need to be applied, and after the coating solution is applied, the masking tape is peeled off to apply the coating unnecessarily. The liquid is removed (see, for example, Patent Document 1). Further, there is a method of removing the coating liquid applied to the substrate using a cotton swab, for example.

JP 2002-151254 A

  When removing the coating solution manually using masking tape, cotton swabs, etc., it takes a lot of time to remove the coating solution, which is not suitable for mass production, and the accuracy of tape application and wiping operations is a product. Therefore, manual skill is required, and the product characteristics vary depending on the skill level of the operator, resulting in individual differences between products.

  Further, when using a device for applying a masking tape and a device for peeling off without relying on manual work, these devices are further required, and a space for installing these devices is required, resulting in an increase in manufacturing cost. There is a problem. Furthermore, since the process of sticking a masking tape and the process of peeling a masking tape are required, there exists a problem that the number of processes increases and manufacturing cost increases.

  Therefore, the objective of this invention is providing the manufacturing method and apparatus of an apparatus which can be manufactured by a simple process.

  As a result of intensive studies, the present inventors have found that even when an element formed without removing an unnecessarily applied coating liquid is sealed with a sealing plate, deterioration of the element can be suppressed. The invention has been completed.

The present invention is a method for manufacturing an apparatus comprising a substrate, a line-shaped element that is provided on the substrate and includes an organic layer, and a sealing plate that is bonded to the substrate with the element interposed therebetween. ,
Apply a coating solution containing the material of the organic layer in a line shape so that a part of the organic layer extends out of the sealing region on the substrate to which the sealing plate is bonded and sealed. An element forming step including a step of forming an organic layer;
And a step of adhering a sealing plate to a substrate with an element sandwiched between the organic layer and a part of the organic layer extending out of the sealing region.

  According to the present invention, the line-shaped organic layer is formed by partially extending outside the sealing region where the sealing plate is bonded and sealed. This line-shaped organic layer is pasted together by a sealing plate in a state where a part thereof extends outside the sealing region. In the conventional technique, a part of the applied organic material is removed to form the organic layer so as to be within the sealing region, and then the sealing plate is bonded. The process of removing is abbreviate | omitted and a sealing board is bonded together in the state which a part of organic layer extended | stretched out of the sealing area | region. As a result, for example, individual differences caused by removing organic materials by hand can be eliminated, and the number of processes can be reduced to create elements at low cost. Since an apparatus for removing the material becomes unnecessary, an increase in manufacturing cost can be suppressed.

  FIG. 1 is a plan view showing a light emitting device 1 according to an embodiment of the present invention. FIG. 2 is a cross-sectional view of the light emitting device 1 as viewed from the section line II-II in FIG. The light emitting device 1 includes a substrate 2, a light emitting element 3 provided on the substrate 2, and a sealing plate 4 bonded to the substrate 2 with the light emitting element 3 interposed therebetween. The light emitting element 3 in this Embodiment is implement | achieved by the organic EL element which light-emits by applying a voltage. Light from the light emitting element 3 is extracted from at least one of the substrate 2 side and the sealing plate 4 side.

  The substrate 2 in the present embodiment is formed in a long plate shape. In the so-called bottom emission type light emitting device 1 that extracts light from the light emitting element 3 from the substrate 2 side, the substrate 2 is transparent or semi-transmissive to the wavelength of the generated light. In the following description, the longitudinal direction of the substrate 2 may be referred to as a first direction X, the short direction of the substrate 2 may be referred to as a second direction Y, and the thickness direction of the substrate 2 may be referred to as a third direction Z.

  The light emitting element 3 is formed in a line shape by extending in the first direction X in the vicinity of the center portion in the second direction Y of the substrate 2 on one surface of the third direction Z of the substrate 2. The line shape is a shape having a finite cross section and extending along a predetermined line, and is not limited to a straight line shape but may be a curved shape or may have a bent portion. The light emitting element 3 in the present embodiment includes an anode (not shown), an organic layer 5, and a cathode 6, and the anode, the organic layer 5 and the cathode 6 have substantially the same width in the second direction Y. Are stacked in this order in the third direction Z, and are formed in a straight line extending in the first direction X. The organic layer 5 in the present embodiment is composed of a hole injection layer 8 stacked on the anode and a light emitting layer 9 stacked on the hole injection layer 8.

  In the present embodiment, the anode, the organic layer 5 and the cathode 6 are each formed in a line shape extending in the first direction X, and at least the organic layer 5 is formed from the sealing region 11 sealed by the sealing plate 4. A part is provided by stretching. Specifically, the organic layer 5 is provided with both end portions in the first direction X extending outside the sealing region 11. The organic layer 5 has a width direction (in this embodiment) perpendicular to the direction extending in a line (first direction X in the present embodiment) and the thickness direction of the substrate (third direction Z in the present embodiment). The width in the second direction Y) is preferably set to 1 mm or less. In the sealing region 11, the length of the organic layer 5 along the extending direction of the organic layer 5 (corresponding to the length in the first direction X of the sealing region 11 in this embodiment) is the width direction (this embodiment). In the embodiment, the width is preferably 100 times or more, more preferably 200 times or more, with respect to the width in the second direction Y).

  The anode is formed such that both ends in the first direction X are slightly retracted from the outside of the sealing region 11 into the sealing region 11 without extending from the sealing region 11 to the outside of the sealing region 11. That is, the anode is formed so as to be accommodated in the sealing region 11 and is completely sealed by the sealing plate 4.

  Similarly to the anode, the cathode 6 does not extend from the sealing region 11 to the outside of the sealing region 11, and both ends in the first direction X are slightly retracted from the outside of the sealing region 11 into the sealing region 11. It is formed. That is, the anode is formed so as to be accommodated in the sealing region 11 and is completely sealed by the sealing plate 4.

  The sealing plate 4 has a substantially rectangular parallelepiped shape extending in the first direction X and is bonded to the substrate 2 with the light emitting element 3 interposed therebetween. The sealing plate 4 is set such that the width in the first direction X is shorter than the width in the first direction X of the light emitting element 3 and the width in the second direction Y is longer than the width in the second direction Y of the light emitting element 3. Is done. The sealing plate 4 is affixed so that the portions excluding both ends of the first direction X of the light emitting element 3 are overlapped when viewed from one side in the third direction Z, and preferably in the approximate center of the second direction Y. The light emitting element 3 is attached to the substrate 2 so as to overlap.

  The sealing plate 4 is attached by, for example, a sealing material 12 provided between the substrate 2 and the sealing plate 4. For example, the sealing material 12 may be arranged around the periphery of the sealing region 11, and preferably, the sealing region is filled so as to fill between the sealing plate 4 and the element 5 in addition to the periphery. 11 is disposed so as to cover the entire surface of the element 5 in the element 11, and more preferably, the surface of the sealing plate 4 facing the substrate 2 so as to fill a space between the sealing plate 4 and the substrate 2 and the element 5. Arranged on the entire surface. The sealing region 11 is a region where the substrate 2 and the sealing plate 4 are bonded and sealed. For example, the sealing material 12 is disposed on the entire surface of the sealing plate 4 facing the substrate 2. In this case, a region overlapping the sealing plate 4 is set as the sealing region 11 between the substrate 2 and the sealing plate 4 when viewed from one side in the third direction Z, so that the sealing material 12 circulates at least. In the case where the sealing material 12, the sealing material 12, the sealing plate 4, and the substrate 2 are surrounded.

  As the width of the sealing plate 4 in the second direction Y increases, the distance from the end of the sealing region 11 in the second direction Y to the light emitting element 3 increases, and the sealing plate 4 is interposed between the outside air and the light emitting element 3. Since the space | interval of the sealing material 12 becomes long, the sealing performance of the light emitting element 3 can be increased. Accordingly, the sealing plate 4 preferably has an area of the region overlapping the light emitting element 3 in the projection view in the perpendicular direction (third direction Z) of the substrate 2 that is 10% or less of the area of the sealing region 11 in the projection view. Is set to be Specifically, the width in the second direction Y of the sealing plate 4 in the present embodiment is set to 10 times or more the width of the light emitting element 3 in the second direction Y. In addition, if the width of the sealing plate 4 in the second direction Y is set to be excessively wide, the light emitting device 1 is increased in size. Therefore, the upper limit of the width of the sealing plate 4 in the second direction Y is appropriately set according to the design. Is done. In the present embodiment, the sealing plate 4 is formed in the shape of a longitudinal plate. However, for example, a plate-like cylindrical shape and a polygonal column shape may be used. If the region overlapping with the light emitting element 3 as viewed from one side is set to be 10% or less of the sealing region 11, the light emitting element 3 can be effectively sealed.

  FIG. 3 is a cross-sectional view schematically showing the manufacturing process of the light emitting device 1. As shown in FIG. 3A, first, a substrate 2 is prepared. Next, a transparent conductive film such as ITO (Indium / Tin / Oxide) is deposited on the surface of the substrate 2 by CVD, sputtering, vacuum evaporation or the like. Next, the deposited conductive film is subjected to photolithography and etching and patterned to form an anode having a predetermined shape. Note that a thin film transistor having, for example, polysilicon and amorphous silicon as a carrier layer may be formed in advance on the substrate 2 in order to form an anode.

  As shown in FIG. 3 (2), after forming the anode, a coating solution containing the material of the hole injection layer 8 constituting the organic layer 5 is applied on the substrate 2 so as to overlap the anode, and is applied in a line shape. A hole injection layer 8 is formed. For example, the coating liquid is applied by a nozzle coating method, and the organic solution containing the material of the hole injection layer 8 is increased to a predetermined pressure by a pump from a nozzle arranged in one of the third directions Z of the substrate 2. Then, while continuously discharging the coating liquid, the nozzle is moved from one side to the other in the first direction X to stop the discharge of the coating liquid. The discharge of the coating liquid starts from the outside of the sealing region 11, enters the sealing region 11, stops after reaching the outside of the sealing region 11 again through the sealing region 11. Thus, after apply | coating a coating liquid in a line form, the positive hole injection layer by which the both ends of the 1st direction X are each extended out of the sealing area | region 11, for example by baking at 200 degreeC for 30 minutes in nitrogen atmosphere 8 is formed.

  As shown in FIG. 3 (3), after forming the hole injection layer 8, the material of the light emitting layer 9 constituting the organic layer 5 is included on the surface of the hole injection layer 8 in the third direction Z. The coating liquid is applied in a line shape to form the light emitting layer 9. For example, from the nozzle arranged in one of the third directions Z of the substrate 2, the organic solution containing the material of the light emitting layer 9 is increased to a predetermined pressure, and the coating liquid is continuously discharged while the nozzle is moved to the first. It is moved from one direction X to the other to stop the discharge of the coating liquid. The discharge of the coating liquid starts from the outside of the sealing region 11, enters the sealing region 11, stops after reaching the outside of the sealing region 11 again through the sealing region 11. Thus, after apply | coating a coating liquid in a line form, the light emitting layer 9 from which the both ends of the 1st direction X each extend outside the sealing area | region 11 by drying at 80 degreeC under reduced pressure for 1 hour, for example It is formed. The material of the organic layer 5 such as the hole injection layer 8 and the light emitting layer 9 includes two materials, a low molecular weight material and a high molecular weight material, but is not particularly limited to any one and can be applied. Applicable to all new materials.

  As shown in FIG. 3 (4), after forming the light emitting layer 9, the cathode 6 is formed on one surface in the third direction Z of the light emitting layer 9. As a method for forming the cathode 6, a vacuum deposition method, a sputtering method, a laminating method in which a metal thin film is thermocompression-bonded, or the like is used. For forming the cathode 6, first, for example, a negative resist based on an epoxy resin is applied from one side in the third direction Z, and a pre-bake treatment is performed. Next, a photomask that has been subjected to predetermined patterning is arranged in one of the third directions Z of the substrate 2, and through this photomask from one side in the third direction Z of the substrate 2 to a predetermined area of the negative resist. An exposure to irradiate light is performed. Next, development is performed with an alkali developer or the like, and the negative resist formed on the one surface in the third direction Z of the light emitting layer 9 is removed to expose the one surface in the third direction Z of the light emitting layer 9. Next, a metal film is deposited on the light emitting layer 6 using, for example, a vacuum evaporation method, the negative resist and the metal film deposited on one surface in the third direction Z of the negative resist are removed, and the cathode 6 is formed. .

  As shown in FIG. 3 (5), after forming the cathode 6, the sealing material 12 is supplied. The sealing material 12 is supplied so that the space between the light emitting element 3 and the sealing plate 4 is filled with the sealing material 12 when the sealing plate 4 is bonded to the substrate 2. In the present embodiment, the sealing material 12 is selectively supplied to the entire surface in the sealing region 11. For example, the sealing material 12 is applied to the entire surface of the sealing plate 4 to be bonded to the substrate 4.

  As shown in FIG. 3 (6), after supplying the sealing material 12, the sealing plate 4 is positioned and placed so as to overlap the sealing region 11, and the sealing plate 4 is adhered to the substrate 2.

  Hereinafter, each member described above will be described in more detail. The substrate 2 is transparent or translucent in the so-called bottom emission type light emitting device 1 that extracts light from the substrate 2 side. The substrate 2 is not limited to a rigid substrate, and may be a flexible substrate, and those that do not change in the process of forming electrodes and forming an organic layer are preferably used. For example, glass, plastic, polymer film, silicon substrate , And a laminate of these are used. The substrate 2 is commercially available or can be manufactured by a known method. Note that, in the top emission type light emitting device 2 that extracts light from the sealing plate 4 side, the substrate 2 may be opaque, and for example, a stainless substrate or a single crystal semiconductor substrate may be used.

  As the anode, a transparent or translucent electrode is preferably used. By forming the anode with transparent or translucent electrodes in this way, a so-called bottom emission type light emitting device 1 that extracts light from the anode side can be realized. As the transparent or translucent electrode, one having a high light transmittance is preferably used, and a metal oxide, metal sulfide or metal thin film having high electrical conductivity can be used, and it is appropriately selected depending on the organic layer to be used. Used. Specifically, as the electrode, conductive glass made of indium oxide, zinc oxide, tin oxide, or indium tin oxide (ITO), indium zinc oxide (IZO), or the like, which is a composite thereof, is used. And a thin film made of gold, platinum, silver, copper or the like, and a film formed of ITO, IZO, tin oxide or the like is preferably used. The anode is formed by, for example, a vacuum deposition method, a sputtering method, an ion plating method, a plating method, or the like. Further, as the anode, a transparent conductive film made of an organic material such as polyaniline or a derivative thereof, polythiophene or a derivative thereof may be used.

  For the anode, for example, a material that reflects light in the case of the top emission type may be used. As the material, a metal, metal oxide, or metal sulfide having a work function of 3.0 eV or more is preferably used.

  The film thickness of the anode can be appropriately selected in consideration of light transmittance and electrical conductivity, and is, for example, 10 nm to 10 μm, preferably 20 nm to 1 μm, and more preferably 50 nm to 500 nm. .

  Examples of the material for forming the hole injection layer 8 include phenylamine, starburst amine, phthalocyanine, vanadium oxide, molybdenum oxide, ruthenium oxide, aluminum oxide and other oxides, amorphous carbon, polyaniline, polythiophene derivatives, and the like. Can be mentioned.

  Examples of the method for forming the hole injection layer 8 include film formation from a solution. The solvent used for film formation from a solution is not particularly limited as long as it dissolves the material for forming the hole injection layer 8, and is a chlorine-based solvent such as chloroform, methylene chloride, dichloroethane, or an ether-based solvent such as tetrahydrofuran. Examples include solvents, aromatic hydrocarbon solvents such as toluene and xylene, ketone solvents such as acetone and methyl ethyl ketone, and ester solvents such as ethyl acetate, butyl acetate, and ethyl cellosolve acetate.

  When the hole injection layer 8 is formed from a mixed solution with a polymer binder, the polymer binder to be mixed is preferably one that does not extremely inhibit charge transport, and one that does not strongly absorb visible light. Preferably used. Examples of the polymer binder include polycarbonate, polyacrylate, polymethyl acrylate, polymethyl methacrylate, polystyrene, polyvinyl chloride, and polysiloxane.

  As a film forming method from a solution, a spin coating method, a casting method, a micro gravure coating method, a gravure coating method, a bar coating method, a roll coating method, a wire bar coating method, a dip coating method, a spray coating method, a nozzle coating method, Coating methods such as a screen printing method, a flexographic printing method, an offset printing method, and an inkjet printing method can be used. As a coating method for applying the solution in a line shape, a nozzle coating method, a screen printing method, a flexographic printing method, an offset printing method, and an ink jet printing method are preferably used, and among these, an organic material can be applied at a high speed. A nozzle coating method is preferred.

  The film thickness of the hole injection layer 8 varies depending on the material used, and is selected so that the drive voltage and the light emission efficiency are appropriate. The thickness of the hole injection layer 8 needs to be at least a thickness that does not cause pinholes. However, if the thickness of the hole injection layer 8 is too thick, the driving voltage of the light emitting element 3 is increased, and it is not preferable because the outside air easily enters at a portion extending out of the sealing region 11. Therefore, the film thickness of the hole injection layer 8 is, for example, 1 nm to 1 μm, preferably 2 nm to 500 nm, and more preferably 5 nm to 200 nm.

  The light emitting layer 9 is preferably an organic light emitting layer, and is formed mainly including organic substances (low molecular compound and high molecular compound) that emit fluorescence or phosphorescence. The light emitting layer 9 contains a material capable of emitting light by applying a current or applying a voltage. The light emitting layer 9 emits light having a wavelength corresponding to the material, and emits light of, for example, red, blue, green, intermediate color, or white. Examples of the material for forming the light emitting layer 9 include a dye material, a metal complex material, and a polymer material.

  Examples of dye-based materials include cyclopentamine derivatives, tetraphenylbutadiene derivative compounds, triphenylamine derivatives, oxadiazole derivatives, pyrazoloquinoline derivatives, distyrylbenzene derivatives, distyrylarylene derivatives, pyrrole derivatives, thiophene ring compounds. Pyridine ring compounds, perinone derivatives, perylene derivatives, oligothiophene derivatives, trifumanylamine derivatives, oxadiazole dimers, pyrazoline dimers, and the like.

  Examples of metal complex materials include metal complexes that emit light from triplet excited states such as iridium complexes and platinum complexes, aluminum quinolinol complexes, benzoquinolinol beryllium complexes, benzoxazolyl zinc complexes, benzothiazole zinc complexes, azomethyls. Zinc complex, porphyrin zinc complex, europium complex, etc., which has Al, Zn, Be or the like as the central metal or rare earth metal such as Tb, Eu, or Dy, and the ligand is oxadiazole, thiadiazole, phenylpyridine, phenylbenzo Examples thereof include metal complexes having an imidazole or quinoline structure.

  Polymeric materials include polyparaphenylene vinylene derivatives, polythiophene derivatives, polyparaphenylene derivatives, polysilane derivatives, polyacetylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, and polymerized chromophores and metal complex light emitting materials. Etc.

  Among the light-emitting materials, materials that emit blue light include distyrylarylene derivatives, oxadiazole derivatives, and polymers thereof, polyvinylcarbazole derivatives, polyparaphenylene derivatives, and polyfluorene derivatives. Of these, polymer materials such as polyvinyl carbazole derivatives, polyparaphenylene derivatives, and polyfluorene derivatives are preferred.

  Examples of materials that emit green light include quinacridone derivatives, coumarin derivatives, and polymers thereof, polyparaphenylene vinylene derivatives, polyfluorene derivatives, and the like. Of these, polymer materials such as polyparaphenylene vinylene derivatives and polyfluorene derivatives are preferred.

  Examples of materials that emit red light include coumarin derivatives, thiophene ring compounds, and polymers thereof, polyparaphenylene vinylene derivatives, polythiophene derivatives, and polyfluorene derivatives. Among these, polymer materials such as polyparaphenylene vinylene derivatives, polythiophene derivatives, and polyfluorene derivatives are preferable.

  A dopant can be added to the light emitting layer 9 for the purpose of improving the light emission efficiency or changing the light emission wavelength. Examples of such dopants include perylene derivatives, coumarin derivatives, rubrene derivatives, quinacridone derivatives, squalium derivatives, porphyrin derivatives, styryl dyes, tetracene derivatives, pyrazolone derivatives, decacyclene, phenoxazone, and the like. Examples of the layer thickness of the light emitting layer 9 are usually about 2 nm to 200 nm.

  Examples of the method for forming the light emitting layer 9 containing an organic material include film formation from a solution containing a light emitting material. The solvent used for film formation from a solution is not particularly limited as long as it dissolves the material for forming the light emitting layer 9. For example, the same solvent as the above-described solvent for dissolving the material for forming the hole injection layer 8 is used. Can be mentioned. Examples of the method for applying the solution include the same methods as those for forming the hole injection layer 8 described above, and include a nozzle coating method, a screen printing method, a flexographic printing method, an offset printing method, and an inkjet printing method. Among these, the nozzle coating method that can apply an organic material at a high speed is preferable.

  When a thin film is laminated by applying a solution, it is preferable that the layer in contact with the applied solution does not dissolve in the applied solution. For example, a method of selecting a type of solvent that does not dissolve the layer in contact with the solution as the solvent of the coating solution, or applying the solution after insolubilizing the layer in contact with the solution by photocrosslinking or thermal crosslinking in advance.

  The material of the cathode 6 is preferably a material having a small work function and easy electron injection into the light emitting layer 9 and / or a material having a high electric conductivity and / or a material having a high visible light reflectance. As a metal used for the cathode 6, an alkali metal, an alkaline earth metal, a transition metal and a group III-B metal can be used. Examples of the material of the cathode 6 include lithium, sodium, potassium, rubidium, cesium, beryllium, magnesium, calcium, strontium, barium, aluminum, scandium, vanadium, zinc, yttrium, indium, cerium, samarium, europium, terbium, ytterbium. Or two or more of these metals, or one or more of them, and one or more of gold, silver, platinum, copper, manganese, titanium, cobalt, nickel, tungsten, tin An alloy, graphite, or a graphite intercalation compound is used. Examples of the alloy include magnesium-silver alloy, magnesium-indium alloy, magnesium-aluminum alloy, indium-silver alloy, lithium-aluminum alloy, lithium-magnesium alloy, lithium-indium alloy, calcium-aluminum alloy, and the like. Moreover, a transparent conductive electrode can be used as the cathode 6, for example, a conductive metal oxide, a conductive organic substance, etc. can be used. Specifically, indium oxide, zinc oxide, tin oxide, and their composites such as ITO and IZO are used as the conductive metal oxide, and as the conductive organic substance, polyaniline or a derivative thereof, polythiophene or A transparent conductive film made of an organic material such as a derivative thereof is used. By using such a transparent conductive electrode for the cathode 6, a top emission type light emitting device can be realized. Note that the cathode may have a laminated structure of two or more layers. In addition, an electron injection layer described later may be used as the cathode.

  The film thickness of the cathode 6 can be appropriately selected in consideration of electric conductivity and durability, and is, for example, 10 nm to 10 μm, preferably 20 nm to 1 μm, and more preferably 50 nm to 500 nm.

  Examples of the sealing material 12 include a thermosetting resin, a photocurable resin, and an adhesive. When the thermosetting resin is used, the sealing plate 4 is bonded to the substrate 2 by bonding the sealing plate 4 to the substrate 2 and then heating at a predetermined temperature. Moreover, when using a photocurable resin, after bonding the sealing board 4 to the board | substrate 2, the sealing board 4 is adhere | attached on the board | substrate 2 by irradiating an ultraviolet-ray, for example from the sealing board 5 side.

  The sealing plate 4 is formed of a material that is difficult to pass outside air such as water vapor and oxygen, and is not limited to a rigid substrate but may be a flexible substrate. As the sealing plate 4, for example, a glass plate, a plastic plate, a polymer film, a silicon plate, a metal foil, and a laminate of these are used. In order to further improve the barrier properties, a plastic substrate or a polymer film in which an inorganic thin film or a film in which an inorganic thin film and a polymer film are laminated is formed on the bonding surface facing the substrate 2 is used as the sealing plate 4. You may use for. The thickness of the sealing plate 4 is appropriately set in consideration of barrier properties against outside air such as water vapor and oxygen.

  According to the light emitting device 1 of the present embodiment described above, the line-shaped organic layer 5 is formed by partially extending from the sealing region 11 where the sealing plate 4 is bonded. The line-shaped organic layer 5 is bonded and sealed by the sealing plate 4 in a state where a part of the organic layer 5 extends outside the sealing region 11. In the conventional technique, the sealing plate is bonded in a state where the organic layer is formed so as to be within the sealing region by removing both ends of the applied organic material. Since the sealing plate 4 is bonded in a state where a part of the layer 5 extends outside the sealing region 11, the step of removing the applied organic material can be omitted. As a result, for example, individual differences caused by removing organic materials by hand can be eliminated, and the number of processes can be reduced to create elements at low cost. Since an apparatus for removing the material becomes unnecessary, an increase in manufacturing cost can be suppressed.

  In the present embodiment, since the sealing plate 4 is bonded in a state where a part of the organic layer 5 extends out of the sealing region 11, the organic layer 5 fits in the sealing region 11 as in the conventional technique. Compared with the case where the sealing plate 4 is bonded in a state, the adhesiveness may be lowered. However, since only one organic layer 5 is provided in the present embodiment, the overlapping region between the sealing plate 4 and the organic layer 5 is smaller than when a large number of organic EL elements are arranged as in the conventional technique. As a result, a decrease in adhesiveness can be suppressed, and a decrease in sealing performance due to a decrease in adhesiveness can be suppressed. In addition, since the organic layer 5 has two portions, one end and the other end, that are in contact with the outside air, the light emitting element 3 is exposed from the portion that is exposed to the outside air as compared with the case where the organic layer 5 is completely covered with the sealing plate 4. May deteriorate. However, since a large number of organic EL elements are arranged in the conventional technique, if the organic layer 5 extends outside the sealing region 11, the number of parts that come into contact with the outside air increases, and the deterioration of the organic EL elements becomes severe. In the present embodiment, since only one organic layer 5 is provided, there are few parts that come into contact with the outside air, and the light emitting element 3 of the light-emitting element 3 caused by the entry of the outside air even if the organic layer 5 is not completely covered with the sealing plate 4. Deterioration can be suppressed. In addition, the organic layer 5 of the present embodiment is the length of the organic layer 5 in the sealing region 11 along the direction in which the organic layer 5 extends (the length of the sealing region 11 in the first direction X in the present embodiment). Is preferably 100 times or more, more preferably 200 times or more the width of the organic layer 5 in the width direction. Thus, since the length in the extending direction of the organic layer 5 is longer than the width in the sealing region 11, the region in contact with the outside air can be kept relatively small with respect to the organic layer 5 in the sealing region. The influence of outside air can be reduced. As described above, in this embodiment mode, although the process of removing the applied organic material is omitted, it is possible to suppress the deterioration of the light-emitting element 3 and the deterioration of the light-emitting element 3.

  Further, according to the light emitting device 1 of the present embodiment, the space between the light emitting element 3 and the sealing plate 4 is filled with the sealing material 12 and the sealing plate 4 is bonded, so the light emitting element 3 and the sealing plate No gap is formed between the four. For example, when the sealing material 12 is supplied only to the peripheral portion of the sealing region 11 and the sealing plate 4 is bonded, the thickness of the sealing material 12 causes the gap between the sealing plate 4 and the light emitting element 3. There is a possibility that a gap is formed, and outside air enters the gap and the light emitting element 3 may deteriorate. However, in this embodiment, the space between the light emitting element 3 and the sealing plate 4 is filled with the sealing material 12, It can suppress that the light emitting element 3 deteriorates.

  Moreover, according to the light-emitting device 1 of this Embodiment, the width | variety of the 2nd direction Y of the organic layer 5 is set to 1 mm or less. Since the organic layer 5 is sealed in a state in which a part of the organic layer 5 extends outside the sealing region 11, there is a region in contact with the outside air in the stretched portion of the organic layer 5, and the outside air enters from the portion in contact with the outside air. Although it becomes easy, the width in the width direction of the organic layer 5 is set to 1 mm or less and the area in contact with the outside air is set small, so that the outside air is prevented from entering the sealing area 11 and the light emitting element 3 is deteriorated by the outside air. This can be suppressed.

  Moreover, according to the light-emitting device 1 of this Embodiment, the area | region except the area | region where the sealing board 4 overlaps with the organic layer 5 in the sealing area | region 11 is set to 90% or more. If the region where the sealing plate overlaps the organic layer 5 is set to exceed 10% of the sealing region 11, the region surrounding the organic layer 5 in the sealing region 11 is narrowed. Since the interval between the sealing material 12 interposed between the outside air and the outside air is reduced, the outside air may reach the light emitting element 3 through the sealing material 12 and the light emitting element 3 may be deteriorated. By setting a wide gap between the sealing material 12 interposed between the layer 5 and the outside air, the organic layer 5 is isolated from the outside air, and the outside air is prevented from reaching the light emitting element 3, thereby deteriorating the light emitting element 3. Suppressed.

  In addition, according to the light emitting device 1 of the present embodiment, the organic layer 5 may be formed by extending outside the sealing region 11, so that the organic material discharge start position and the stop position are matched with high accuracy. The light emitting device 1 according to the present embodiment can be easily manufactured even when a device with poor response to switching between discharge start and stop as used in the nozzle coating method is used.

  4 is a plan view showing a light-emitting device 21 according to another embodiment of the present invention, and FIG. 5 is a cross-sectional view of the light-emitting device 21 as seen from the section line VV in FIG. The light emitting device 21 of the present embodiment has a configuration in which an insulating layer 22 is further added to the light emitting device 1 of the above-described embodiment. The light-emitting device 21 of the present embodiment has substantially the same configuration as the light-emitting device 1 of the above-described embodiment, and corresponding portions are denoted by the same reference numerals, and redundant description may be omitted. .

  The insulating layer 22 has electrical insulation and is provided between the anode and the organic layer 5. The insulating layer 22 is formed so that the width in the first direction X and the second direction Y is wider than that of the organic layer 5, and viewed from one side of the third direction Z, at the center of the first direction X and the second direction Y. The organic layer 5 is laminated and disposed. In addition, a plurality of through holes 23 penetrating in the third direction Z are formed in the insulating layer 22. The through holes 23 are arranged with a predetermined interval in the first direction X in a region where the organic layer 5 is laminated. Since the organic layer 5 is formed by a coating method, the through-hole 23 is partially filled with the organic layer 5, and the organic layer 4 and the anode are connected at a site where the through-hole 23 is formed. Therefore, the anode and the cathode 6 are electrically connected only in the region where the through hole 23 is formed, and light emission occurs in the light emitting layer 9 when a current is passed.

The insulating layer 22 can be formed by depositing, for example, SiO ₂ , metal fluoride, metal oxide, organic insulating material, or the like by, for example, CVD or sputtering.

  According to the light emitting device 21 of the present embodiment, since the insulating layer 22 is provided between the organic layer 5 and the anode, a voltage is applied to the light emitting element 3 in a portion where the through hole 23 is not formed in the insulating layer 22. Even if it does, current does not flow, so it does not emit light. Thus, by providing the insulating layer 23 in which the through-hole 23 is formed, the site | part in which the through-hole 23 was formed can be light-emitted selectively.

  In addition, the through holes 23 arranged at both ends in the first direction X are arranged with a predetermined gap in the sealing region 11 from the boundary between the sealing region 11 and the outside of the sealing region 11. . That is, since the insulating layer 22 is formed near both ends of the sealing region 11 in the first direction X, the light emitting element 3 does not emit light near the boundary between the sealing region 11 and the outside of the sealing region 11. In the vicinity of the boundary between the sealing region 11 and the outside of the sealing region 11, the light emitting element 3 may be deteriorated by outside air. By setting the vicinity of the boundary so as not to emit light in advance, the vicinity of the boundary of the light emitting element 3 is temporarily assumed. Even if the light intensity deteriorates, the intensity distribution of light from the light emitting device 21 can be maintained in the initial state, and the performance deterioration as the light emitting device 21 can be suppressed.

  FIG. 6 is a cross-sectional view showing a light emitting device 31 of still another embodiment of the present embodiment. The plan view of the light-emitting device 31 of the present embodiment is the same as the light-emitting device 21 shown in FIG. 4, and FIG. 6 is a cross-sectional view of the light-emitting device 31 as seen from the section line VV in FIG. The light emitting device 31 of the present embodiment is different from the light emitting device 21 of the above-described embodiment shown in FIG. 4 in the position where the insulating layer 32 is provided. Since the light emitting device 31 of the present embodiment has substantially the same configuration as the light emitting devices 1 and 21 of the above-described embodiments, the corresponding parts are denoted by the same reference numerals, and redundant description is omitted.

  The insulating layer 32 is provided between the organic layer 5 and the cathode 6. The insulating layer 32 is formed so as to have a wider width in the first direction X and the second direction Y than the organic layer 5, and is laminated so as to cover the entire organic layer 5 from one side in the third direction Z of the organic layer 5. . The insulating layer 32 is formed with a plurality of through holes 33 penetrating in the third direction Z. The through-holes 33 are arranged at a predetermined interval in the first direction X in the region laminated on the organic layer 5. Since the through hole 33 is partially filled with the cathode 6, the organic layer 4 and the cathode 6 are connected to each other at the portion where the through hole 33 is formed. Therefore, the anode and the cathode 6 are electrically connected only in the region where the through hole 23 is formed, and light emission occurs in the light emitting layer 9 when a current is passed.

The insulating layer 32 can be formed by depositing, for example, SiO ₂ or the like by, for example, a CVD method or a sputtering method.

  According to the light emitting device 31 of the present embodiment, since the insulating layer 32 is provided between the organic layer 5 and the cathode 6, a voltage is applied to the light emitting element 3 at a portion where the through hole 33 is not formed in the insulating layer 32. Even if it is applied, no current flows, so no light is emitted. Thus, by providing the insulating layer 32 in which the through-hole 33 is formed, the site | part in which the through-hole 33 was formed can be light-emitted selectively.

  In addition, the through holes 33 arranged at both ends in the first direction X are arranged with a predetermined gap in the sealing region 11 from the boundary between the sealing region 11 and the outside of the sealing region 11. . Therefore, similarly to the light-emitting device 21 of the above-described embodiment, the light intensity distribution of the light emitted from the light-emitting device 21 can be maintained in the initial state, and deterioration of the performance as the light-emitting device 31 can be suppressed. .

  In the light emitting devices 1, 21, and 31 of the above-described embodiments, one light emitting element 3 is formed. However, a plurality of light emitting elements 3 may be formed. For example, a plurality of light emitting elements 3 may be arranged at predetermined intervals in the second direction Y. When a large number of light emitting elements 3 are arranged as in the prior art, the above-described problems of deterioration in sealing performance and adhesiveness are likely to occur. However, if the number of light emitting elements 3 to be arranged is small, an applied organic material is used. Even if the step of removing is omitted, it is possible to suppress a decrease in sealing performance and a decrease in adhesiveness. The number of light emitting elements 3 to be arranged is preferably set to 10 or less, more preferably set to 5 or less, and most preferably set to 1. In particular, the width of each organic layer 5 in the second direction Y is 1 mm or less, and the total of the regions overlapping each light emitting element 3 when viewed from one side in the third direction Z is 10% or less of the sealing region 11. If the light emitting device is set as described above, even if a plurality of light emitting elements 3 are arranged, even if the step of removing the applied organic material is omitted, it is possible to suppress deterioration in sealing performance and adhesiveness. The light emitting device can be manufactured at low cost.

  By providing a plurality of light emitting elements 3 in this way, for example, one or a plurality of light emitting elements 3 can be used as the spare light emitting elements 3. For example, even if the light emitting element 3 being used is deteriorated and the luminance is lowered, the spare light emitting element 3 can be used instead, and the life of the entire light emitting device can be extended.

  Further, in the light emitting devices 1, 21 and 31 of the above-described embodiments, both end portions of the organic layer 5 in the first direction X extend outside the sealing region 11, but either one of the both end portions is used. May extend outside the sealing region 11. In this case, the application of the organic material for forming the organic layer 5 is started from outside the sealing region 11 and stopped in the sealing region 11, or the application is started from within the sealing region 11, What is necessary is just to stop outside the sealing area | region 11, and it is not necessary to add the process of removing an organic material newly.

  In the light emitting devices 1, 21, 31 of the above-described embodiments, the method for manufacturing one light emitting device 1, 21, 31 with respect to one substrate 2 has been described. However, a plurality of light emitting devices on one substrate. And a plurality of light emitting devices may be manufactured by dividing the substrate. In this case, for example, the substrate is virtually divided into a lattice shape, a formation region for forming each light emitting device is set, and an anode is formed for each formation region. Next, an organic material is applied in a straight line extending in the first direction X to form an organic layer. The application of the organic material does not have to be performed individually for each forming region. For example, the organic material is applied with a single stroke, and the organic material is applied in a line so as to cross or vertically cross all the forming regions. Also good. For example, (1) a step of applying an organic material from one end to the other end in the first direction X of the substrate, (2) a step of applying an organic material to a row adjacent to one side in the second direction Y, (3) A series of (1) to (4), a step of applying an organic material from the other end portion in the first direction X to one end portion, and a step of (4) applying an organic material to a row adjacent to one side in the second direction Y. By repeating this step, organic layers extending linearly from one end of the first direction X to the other end of the central portion in the second direction Y of each forming region are formed. Since the organic material is applied in a single manner as described above, it is not necessary to sequentially control the discharge of the organic material and the stop of the discharge, and the organic material can be applied in a short time. When the organic layer is formed, a plurality of light emitting devices can be manufactured by attaching a sealing plate to each forming region and dividing the substrate into each forming region.

  Although the organic layer 5 in the light emitting devices 1, 21, 31 of the above-described embodiments is configured by two layers of the hole injection layer 8 and the light emitting layer 9, the organic layer 5 is only the light emitting layer 9. It may be constituted by one layer. The organic layer 5 only needs to include at least the light emitting layer 9, and may include one or more layers different from the hole injection layer 8, and one or more in addition to the hole injection layer 8. You may have a layer of. Below, an example of the layer structure which can be applied to the organic layer 5 is shown. An inorganic layer made of an inorganic material may be inserted between the anode and the light emitting layer 9 and / or between the light emitting layer 9 and the cathode 6 and in the organic layer 5.

  Examples of the layer that can be provided between the cathode and the light emitting layer include an electron injection layer, an electron transport layer, and a hole blocking layer. When both the electron injection layer and the electron transport layer are provided, the layer close to the cathode is the electron injection layer, and the layer close to the light emitting layer is the electron transport layer.

  The electron injection layer is a layer having a function of improving electron injection efficiency from the cathode, and the electron transport layer is a layer having a function of improving electron injection from the cathode, the electron injection layer or the electron transport layer closer to the cathode. is there. In addition, when the electron injection layer or the electron transport layer has a function of blocking hole transport, these layers may also serve as the hole blocking layer. The fact that the electron injection layer or the electron transport layer has a function of blocking hole transport makes it possible, for example, to produce an element that allows only hole current to flow, and to confirm the blocking effect by reducing the current value. is there.

  Examples of the material provided between the anode and the light emitting layer include a hole injection layer, a hole transport layer, and an electron block layer. When both the hole injection layer and the hole transport layer are provided, the layer close to the anode is the hole injection layer, and the layer close to the light emitting layer is the hole transport layer.

  The hole injection layer is a layer having a function of improving the hole injection efficiency from the anode, and the hole transport layer is a hole injection layer from the anode, the hole injection layer or the hole transport layer closer to the anode. It is a layer having a function of improving. In addition, when the hole injection layer or the hole transport layer has a function of blocking electron transport, these layers may also serve as an electron block layer. The fact that the hole injection layer or hole transport layer has the function of blocking electron transport, for example, it is possible to produce an element that allows only electron current to flow and to check the effect of blocking by reducing the current value. It is.

  In the light-emitting element of this embodiment, one light-emitting layer is provided. However, the number of light-emitting layers is not limited to one and may be two or more.

  Note that the electron injection layer and the hole injection layer may be collectively referred to as a charge injection layer, and the electron transport layer and the hole transport layer may be collectively referred to as a charge transport layer.

More specifically, the light-emitting device of the present invention can have any of the following layer configurations:
a) Anode / hole transport layer / light emitting layer / cathode b) Anode / light emitting layer / electron transport layer / cathode c) Anode / hole transport layer / light emitting layer / electron transport layer / cathode d) Anode / charge injection layer / Emissive layer / cathode e) anode / emission layer / charge injection layer / cathode f) anode / charge injection layer / emission layer / charge injection layer / cathode g) anode / charge injection layer / hole transport layer / emission layer / cathode h ) Anode / hole transport layer / light emitting layer / charge injection layer / cathode i) Anode / charge injection layer / hole transport layer / light emitting layer / charge injection layer / cathode j) Anode / charge injection layer / light emitting layer / charge transport Layer / cathode k) anode / light emitting layer / electron transport layer / charge injection layer / cathode l) anode / charge injection layer / light emitting layer / electron transport layer / charge injection layer / cathode m) anode / charge injection layer / hole transport Layer / light emitting layer / charge transport layer / cathode n) anode / hole transport layer / light emitting layer / electron transport layer / charge injection layer / cathode o) anode / charge injection layer / Hole transport layer / light emitting layer / electron transporting layer / charge injection layer / cathode (wherein, / indicates that each layer is laminated adjacently. Hereinafter the same.)
Furthermore, the light-emitting element of the present invention may have two or more light-emitting layers. Specifically, as an organic EL element having two light emitting layers,
p) Layer structure of anode / charge injection layer / hole transport layer / light emitting layer / electron transport layer / charge injection layer / electrode / charge injection layer / hole transport layer / light emitting layer / electron transport layer / charge injection layer / cathode The thing which has is mentioned.

In addition, as a light emitting device having three or more light emitting layers, specifically, electrode / charge injection layer / hole transport layer / light emitting layer / electron transport layer / charge injection layer as one repeating unit,
q) A layer structure comprising an anode / charge injection layer / hole transport layer / light emitting layer / electron transport layer / charge injection layer / the repeating unit / the repeating unit ... / cathode and two or more repeating units. The thing which has.

  In the layer structures p and q, each layer other than the anode, the electrode, the cathode, and the light emitting layer can be deleted as necessary. An electrode is a layer that generates holes and electrons when an electric field is applied. Examples thereof include vanadium oxide, ITO, and molybdenum oxide.

  In order to emit light from the light emitting layer, the light emitting element normally has a transparent layer on either the anode side or the cathode side with respect to the light emitting layer. Specifically, for example, in the case of a light emitting device having a configuration of substrate / anode / charge injection layer / hole transport layer / light emitting layer / electron transport layer / charge injection layer / cathode / sealing plate, substrate, anode, charge injection All layers and hole transport layers are transparent, so-called bottom emission type light emitting devices, or all electron transport layers, charge injection layers, cathodes and sealing plates are transparent, so-called top emission Type light emitting device. In the case of a light emitting device having the structure of substrate / cathode / charge injection layer / electron transport layer / light emitting layer / hole transport layer / charge injection layer / anode / sealing plate, the substrate, cathode, charge injection layer and electron transport All of the layers are transparent, so-called bottom emission type elements, or all of the hole transport layer, charge injection layer, cathode and sealing plate are transparent, so-called top emission type elements. be able to. Here, the term “transparent” means that the visible light transmittance from the light emitting layer to the light emitting layer is 40% or more. In the case of an element that requires light emission in the ultraviolet region or infrared region, a device having a transmittance of 40% or more in the region is preferable.

  In the light-emitting element 3 of the present embodiment, the charge injection layer or the insulating layer having a thickness of 2 nm or less is provided adjacent to the electrode in order to improve the adhesion with the electrode and the charge injection from the electrode. Alternatively, a thin buffer layer may be inserted at the interface between the charge transport layer and the light emitting layer in order to improve the adhesion at the interface or prevent mixing.

  The order and number of layers to be laminated, and the thickness of each layer can be appropriately used in consideration of light emission efficiency and element lifetime.

  Materials constituting the hole transport layer include polyvinyl carbazole or derivatives thereof, polysilane or derivatives thereof, polysiloxane derivatives having aromatic amines in the side chain or main chain, pyrazoline derivatives, arylamine derivatives, stilbene derivatives, triphenyldiamine. Derivatives, polyaniline or derivatives thereof, polythiophene or derivatives thereof, polyarylamine or derivatives thereof, polypyrrole or derivatives thereof, poly (p-phenylene vinylene) or derivatives thereof, or poly (2,5-thienylene vinylene) or derivatives thereof, etc. Is exemplified. Among these, as a hole transport material used for the hole transport layer, polyvinyl carbazole or a derivative thereof, polysilane or a derivative thereof, a polysiloxane derivative having an aromatic amine compound group in a side chain or a main chain, polyaniline or a derivative thereof, Polymeric hole transport materials such as polythiophene or derivatives thereof, polyarylamine or derivatives thereof, poly (p-phenylene vinylene) or derivatives thereof, or poly (2,5-thienylene vinylene) or derivatives thereof are preferred, polyvinylcarbazole Alternatively, a derivative thereof, polysilane or a derivative thereof, and a polysiloxane derivative having an aromatic amine in the side chain or main chain are more preferable. In the case of a low-molecular hole transport material, it is preferably used by being dispersed in a polymer binder.

  Although there is no restriction | limiting in the film-forming method of a positive hole transport layer, In the low molecular hole transport material, the method by the film-forming from a mixed solution with a polymer binder is illustrated. In the case of a polymer hole transport material, a method of film formation from a solution is exemplified.

  The solvent used for film formation from a solution is not particularly limited as long as it can dissolve a hole transport material. Examples of the solvent include chlorine solvents such as chloroform, methylene chloride, and dichloroethane; ether solvents such as tetrahydrofuran; aromatic hydrocarbon solvents such as toluene and xylene; ketone solvents such as acetone and methyl ethyl ketone; ethyl acetate, butyl acetate, An ester solvent such as ethyl cellosolve acetate is exemplified.

  As the polymer binder to be mixed, those not extremely disturbing charge transport are preferable, and those showing no strong absorption against visible light are suitably used. Examples of the polymer binder include polycarbonate, polyacrylate, polymethyl acrylate, polymethyl methacrylate, polystyrene, polyvinyl chloride, and polysiloxane.

  As a film formation method from a solution, a coating method similar to the film formation method of the light emitting layer 9 described above can be used.

  The film thickness of the hole transport layer differs depending on the material used, and may be selected so that the drive voltage and the light emission efficiency are appropriate. However, at least a thickness that does not cause pinholes is required. is there. However, if the film thickness is too thick, the driving voltage of the element increases, which is not preferable. Therefore, the film thickness of the hole transport layer is, for example, 1 nm to 1 μm, preferably 2 nm to 500 nm, and more preferably 5 nm to 200 nm.

  As the electron transport layer, known materials can be used, such as oxadiazole derivatives, anthraquinodimethane or derivatives thereof, benzoquinone or derivatives thereof, naphthoquinone or derivatives thereof, anthraquinones or derivatives thereof, tetracyanoanthraquinodimethane or derivatives thereof. , Fluorenone derivatives, diphenyldicyanoethylene or derivatives thereof, diphenoquinone derivatives, or metal complexes of 8-hydroxyquinoline or derivatives thereof, polyquinoline or derivatives thereof, polyquinoxaline or derivatives thereof, polyfluorene or derivatives thereof, and the like. Among these, as the electron transport layer, an oxadiazole derivative, benzoquinone or a derivative thereof, anthraquinone or a derivative thereof, or a metal complex of 8-hydroxyquinoline or a derivative thereof, polyquinoline or a derivative thereof, polyquinoxaline or a derivative thereof, polyfluorene Or a derivative thereof is preferable, and 2- (4-biphenylyl) -5- (4-t-butylphenyl) -1,3,4-oxadiazole, benzoquinone, anthraquinone, tris (8-quinolinol) aluminum, and polyquinoline are further included. preferable.

  Although there is no restriction | limiting in particular as the film-forming method of an electron carrying layer, The film-forming from a solution is mentioned, The film-forming method similar to the method of forming a hole transport layer from the above-mentioned solution is mentioned.

  The film thickness of the electron transport layer differs depending on the material used, and may be selected so that the drive voltage and the light emission efficiency are appropriate. However, at least a thickness that does not cause pinholes is required. . However, if the film thickness is too thick, the driving voltage of the element becomes high, which is not preferable. Therefore, the thickness of the electron transport layer is, for example, 1 nm to 1 μm, preferably 2 nm to 500 nm, and more preferably 5 nm to 200 nm.

  The electron injection layer is provided between the electron transport layer and the cathode or between the light emitting layer and the cathode. Depending on the type of the light-emitting layer, the electron injection layer may be an alkali metal, an alkaline earth metal, an alloy containing one or more of the above metals, an oxide, a halide and a carbonate of the metal, or a mixture of the substances. Etc. Examples of alkali metals or oxides, halides, and carbonates thereof include lithium, sodium, potassium, rubidium, cesium, lithium oxide, lithium fluoride, sodium oxide, sodium fluoride, potassium oxide, potassium fluoride, rubidium oxide, Examples include rubidium fluoride, cesium oxide, cesium fluoride, and lithium carbonate. Examples of alkaline earth metals or oxides, halides and carbonates thereof include magnesium, calcium, barium, strontium, magnesium oxide, magnesium fluoride, calcium oxide, calcium fluoride, barium oxide, barium fluoride, and oxide. Examples include strontium, strontium fluoride, magnesium carbonate, and the like. The electron injection layer may be a laminate of two or more layers. Specifically, a layer configuration in which a layer made of LiF and a layer made of Ca are stacked is mentioned. The electron injection layer is formed by vapor deposition, sputtering, printing, or the like. The thickness of the electron injection layer is preferably about 1 nm to 1 μm.

  In the light emitting devices 1, 21, 31 of the above-described embodiments, the light emitting element 5 is configured by providing the light emitting layer 9 in the organic layer 5, but by changing the layer configuration of the organic layer 5, the light emitting element 5 Instead of 3, a photoelectric conversion element may be configured to realize a photoelectric conversion device. This photoelectric conversion device is used in, for example, a solar cell and a light detection sensor. Since the photoelectric conversion device of this embodiment is different only in the configuration of the above-described photoelectric conversion element, only the photoelectric conversion element will be described and redundant description will be omitted.

  The photoelectric conversion element of this embodiment mode is realized by a photoelectric conversion element such as a Schottky type, a pn junction type, or a pin type. In the Schottky photoelectric conversion element, the organic layer 5 is constituted by, for example, a p-type semiconductor layer. In the pn junction type photoelectric conversion element, the organic layer 5 is configured by stacking a p-type semiconductor layer and an n-type semiconductor layer. In the pin-type photoelectric conversion element, the organic layer 5 is configured by sandwiching a mixed layer obtained by mixing an n-type semiconductor and a p-type semiconductor between the n-type semiconductor layer and the p-type semiconductor layer. Examples of the material of the p-type semiconductor layer include polysilane and derivatives thereof, polythiophene and derivatives thereof, and polyacetylene. Examples of materials of the n-type semiconductor layer include polyfluorene and derivatives thereof, and fullerene derivatives. Each of the n-type semiconductor layer and the p-type semiconductor layer can be formed in the same manner as the method for forming the organic layer 5 described above.

  As an example, a light-emitting device in which both end portions of a light-emitting element are provided extending from a sealing region was manufactured.

  A photoresist (OFPR13 manufactured by Tokyo Ohka Kogyo Co., Ltd.) was spin-coated at a rotation speed of 1000 rpm on a glass substrate obtained by attaching an ITO film with a thickness of 150 nm to a 200 mm × 200 mm glass substrate by sputtering. Then, the exposure light was irradiated to the photoresist through the photomask in which the desired pattern is formed (Dainippon Screen exposure machine MA-1200), and it developed, and the resist of the desired pattern was obtained. The anode made of ITO patterned into a desired shape was formed by etching the ITO using an etching solution for ITO (IS-3 manufactured by Sasaki Chemical Co., Ltd.) through the obtained resist pattern.

  A suspension of poly (3,4-ethylenedioxythiophene) / polystyrene sulfonic acid (manufactured by Bayer, BaytronP AI4083) was filtered through a membrane filter having a diameter of 0.2 μm on the glass substrate on which the anode was formed. The obtained solution was applied in a line shape using a nozzle printer (NP-300G manufactured by Dainippon Screen Co., Ltd.) to obtain a 300 μm × 200 mm film having a thickness of about 60 nm. The obtained film was dried on a hot plate at 200 ° C. for 10 minutes to form a hole injection layer.

  Next, a xylene solution (1% by weight) of a polymer light emitting material (RP158 manufactured by Summation) was applied in a line shape on the hole injection layer using a nozzle printer (NP-300G manufactured by Dainippon Screen), and thickened. A film having a thickness of about 80 nm and a thickness of 300 μm × 200 mm was obtained. The obtained film was dried under reduced pressure at 80 ° C. for 1 hour to form a light emitting layer.

  Next, barium is mask-deposited on the light emitting layer to form a line-shaped thin film having a thickness of about 5 nm and 100 μm × 200 mm, and then aluminum is mask-deposited on the barium thin film to have a thickness of about 100 nm. A linear thin film of 100 μm × 160 mm was formed to form a cathode.

  After forming the cathode, a sealing material (XNR5516Z manufactured by Nagase ChemteX Corp.) was applied in a 3 mm × 180 mm line shape using a stripe-shaped dispenser on a glass substrate for sealing that had been subjected to UV ozone cleaning for 10 minutes in advance. . Next, the sealing glass substrate was aligned with the cathode, and the sealing plate was bonded under reduced pressure (−25 KPa) so that both ends of the light emitting element were stretched. Thereafter, the pressure was returned to atmospheric pressure, UV light was irradiated to cure the sealing material, and a light emitting device was obtained.

  As a comparative example, a light emitting device having a configuration in which a light emitting element fits in a sealed region without extending from the sealed region was created.

  In the same manner as in the example, a photoresist (OFPR13 manufactured by Tokyo Ohka Kogyo Co., Ltd.) was spin-coated at a rotation speed of 1000 rpm on a glass substrate having a thickness of 150 nm formed by sputtering on a 200 mm × 200 mm glass substrate. Then, the exposure light was irradiated to the photoresist through the photomask in which the desired pattern is formed (Dainippon Screen exposure machine MA-1200), and it developed, and the resist of the desired pattern was obtained. The anode made of ITO patterned into a desired shape was formed by etching the ITO using an etching solution for ITO (IS-3 manufactured by Sasaki Chemical Co., Ltd.) through the obtained resist pattern.

  A suspension of poly (3,4-ethylenedioxythiophene) / polystyrene sulfonic acid (manufactured by Bayer, BaytronP AI4083) was filtered through a membrane filter having a diameter of 0.2 μm on the glass substrate on which the anode was formed. The obtained solution was applied in a line shape using a nozzle printer (NP-300G manufactured by Dainippon Screen Co., Ltd.) to obtain a 300 μm × 200 mm film having a thickness of about 60 nm. Next, using a cloth soaked in water, both ends of the applied film were wiped 20 mm each to obtain a 300 μm × 160 mm film having a thickness of about 60 nm. The obtained film was dried on a hot plate at 200 ° C. for 10 minutes to form a hole injection layer.

  Next, a xylene solution (1% by weight) of a polymer light emitting material (RP158 manufactured by Summation) was applied in a line shape on the hole injection layer using a nozzle printer (NP-300G manufactured by Dainippon Screen), and thickened. A film having a thickness of about 80 nm and a thickness of 300 μm × 200 mm was obtained. Next, using a cloth soaked in xylene, both ends of the applied film were wiped off by 20 mm each to obtain a 300 μm × 160 mm film having a thickness of about 60 nm. The obtained film was dried under reduced pressure at 80 ° C. for 1 hour to form a light emitting layer.

  Next, barium is mask-deposited on the light-emitting layer to form a line-shaped thin film having a thickness of about 5 nm and 100 μm × 160 mm, and then aluminum is mask-deposited on the thin film of barium to have a thickness of about 100 nm. A linear thin film of 100 μm × 160 mm was formed to form a cathode.

  After forming the cathode, a sealing material (XNR5516Z manufactured by Nagase ChemteX Corp.) was applied in a 3 mm × 180 mm line shape using a stripe-shaped dispenser on a glass substrate for sealing that had been subjected to UV ozone cleaning for 10 minutes in advance. . Next, the glass substrate for sealing is aligned so as to overlap the cathode, and the whole light emitting element is covered, that is, under pressure (−25 KPa so that both ends of the light emitting element do not protrude from the glass substrate for sealing. The sealing plate was laminated together. Then, it returned to atmospheric pressure, irradiated UV light, and hardened the sealing material, and obtained the light-emitting device of the comparative example.

  The light intensity of each light emitting device was observed visually when a voltage of 7 V was applied to the light emitting device of the example obtained in this way and the light emitting device of the comparative example to emit light continuously for one day. The light intensity of the light emitting device of the example and the light emitting device of the comparative example at the time when the application of voltage was started was not different in the visual range. Moreover, the light intensity of the light-emitting device of the example after continuing to apply the voltage for one day and the light-emitting device of the comparative example were not different in the visual range, and the light intensity was not decreased. Thus, even if it is the light-emitting device of a present Example which the both ends of a light emitting element extend | stretch from a sealing board by omitting the wiping process, the wiping process is performed and the whole light emitting element is covered with a sealing board It was confirmed that the deterioration of the light emitting element can be suppressed to the same extent as the light emitting device of the example.

It is a top view which shows the light-emitting device 1 of one Embodiment of this invention. It is sectional drawing of the light-emitting device 1 seen from the cut surface line II-II of FIG. 5 is a cross-sectional view schematically showing a manufacturing process of the light emitting device 1. FIG. It is a top view which shows the light-emitting device 21 of other embodiment of this invention. It is sectional drawing of the light-emitting device 21 seen from the cut surface line VV of FIG. It is sectional drawing which shows the light-emitting device 31 of further another embodiment of this Embodiment.

Explanation of symbols

1, 21 and 31 Light emitting device 2 Substrate 3 Light emitting element 4 Sealing plate 5 Organic layer 6 Cathode 8 Hole injection layer 9 Light emitting layer 11 Sealing region 12 Sealing material 22, 32 Insulating layer 23, 33 Through hole

Claims (11)

A manufacturing method of an apparatus comprising a substrate, a line-shaped element provided on the substrate and including an organic layer, and a sealing plate bonded to the substrate with the element interposed therebetween,
Apply a coating solution containing the material of the organic layer in a line shape so that a part of the organic layer extends out of the sealing region on the substrate to which the sealing plate is bonded and sealed. An element forming step including a step of forming an organic layer;
And a step of adhering a sealing plate to a substrate with an element interposed therebetween in a state where a part of the organic layer extends out of the sealing region. The sealing plate is bonded to the substrate via a sealing material,
In the step of bonding the sealing plate to the substrate, the sealing material is supplied and sealed so that the space between the element and the sealing plate is filled with the sealing material when the sealing plate is bonded. The method for manufacturing an apparatus according to claim 1, wherein the plates are bonded together.   The projected area in the perpendicular direction of the substrate has an area of a region where a sealing plate overlaps with the organic layer being 10% or less of the area of the sealed area in the projected view. Device manufacturing method.   4. The organic layer according to claim 1, wherein a width in a width direction perpendicular to a direction extending in a line and a thickness direction of the substrate is set to 1 mm or less. 5. Device manufacturing method.   The method of manufacturing an apparatus according to claim 1, wherein the element is a light emitting element.   The method for manufacturing an apparatus according to claim 1, wherein the element is a photoelectric conversion element. A substrate,
A line-shaped element provided on the substrate and including an organic layer;
Including a sealing plate that is bonded to a substrate across the element and seals the element,
The organic layer is formed in a line shape, and a part of the organic layer extends outside a sealing region sealed by a sealing plate. The sealing plate is bonded to the substrate via a sealing material,
The device according to claim 7, wherein the sealing material is filled in an entire area between the element and the sealing plate.   The apparatus according to claim 8, wherein an area of a region where a sealing plate overlaps the organic layer is 10% or less of an area of the sealing region in the projection view in a projection view in a direction perpendicular to the substrate.   The device according to claim 7, wherein the element is a light emitting element.   The device according to claim 7, wherein the element is a photoelectric conversion element.

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