JP2009135397A - Semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To obtain a semiconductor device capable of preventing the generation of film peeling of an interlayer film in a wide range on a diffusion layer conductive film due to the fusion and volume expansion of a conductive film because a laser beam is absorbed into the diffusion layer conductive film formed on a diffusion layer if the laser beam reaches the diffusion layer when a laser grouping method is used for a scribe region in the case of dividing a semiconductor wafer into chips. <P>SOLUTION: First interlayer insulating films 6 on which wirings are formed and second interlayer insulating films 7 on which vias electrically connected to the wirings are formed are alternately laminated on a semiconductor substrate 1, and a plurality of circuit regions 2 having function elements electrically connected to the wirings or vias and a scribe region 4 formed around the circuit regions 2 as a cutting margin in the cutting of the circuit regions 2 from the semiconductor substrate 1 are formed on the semiconductor substrate 1. First dummy patterns 12 and second dummy patterns 13 which are composed of a conductive material are formed on the scribe region 4. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a semiconductor device having a multilayer wiring structure.

  In general, when forming a wiring layer of a semiconductor device having a multilayer wiring structure, a method (damascene method) in which a metal film is embedded in a groove formed in an interlayer insulating film for each wiring layer is employed. In the damascene method, a metal film is deposited on the entire surface of a semiconductor substrate in which a groove is formed, and an unnecessary metal film is left only in the groove by, for example, chemical mechanical polishing (CMP). Remove. In the CMP method associated with the damascene method, the polishing rate varies depending on the wiring pattern formed in the interlayer insulating film. In other words, the region where the wiring pattern or the like formed in the interlayer insulating film is sparse has a higher polishing rate than the region where the wiring pattern or the like is dense, and thus the film thickness becomes small. Preventing fluctuations in the wiring film thickness resulting from this difference in polishing rate is important in order to suppress the final fluctuations in the wiring film thickness. For this reason, a technique is employed in which a pseudo wiring pattern is arranged as a dummy pattern in an area where wiring patterns and the like are sparse. As a result, pattern corner collapse (dishing) that occurs in the CMP process can be prevented.

  For example, Patent Document 1 describes a semiconductor device in which uniform dummy patterns are provided in a scribe region and a circuit region of a semiconductor substrate in order to prevent dishing in a CMP process.

  FIG. 23 is a diagram showing a scribe region which is a cutting region for dividing a semiconductor wafer in a conventional semiconductor device into chips, and FIG. 23A is a plan configuration of the scribe region in which circuit regions are arranged on the left and right. The upper surface of one of the plurality of first interlayer insulating films constituting the scribe region is shown. FIG. 23B is a cross-sectional configuration taken along line XVIb-XVIb in FIG. 23A, and shows a cross section in which a protective film or the like formed on the interlayer insulating film is formed.

  As shown in FIG. 23A, a plurality of circuit regions 2 in which functional elements (not shown) are formed are formed on the main surface of the semiconductor substrate 1 at intervals. Is formed with a seal ring 3 made of a conductive material. In a region sandwiched between the seal rings 3 formed in the circuit regions 2 adjacent to each other, a scribe region 4 that is a cutting region when the circuit regions 2 are separated into pieces is formed.

  Further, as shown in FIG. 23B, the first interlayer insulating film 6 and the second interlayer insulating film 7 are alternately stacked on the main surface of the semiconductor substrate 1, and A wiring (not shown) made of a conductive material is formed in the first interlayer insulating film 6, and a via (not shown) made of a conductive material is formed in the second interlayer insulating film 7 in the circuit region 2. Is formed. On the other hand, the first interlayer insulating film 6 in the scribe region 4 is formed with a dummy pattern 30 that is an isolated pattern (island pattern) made of a conductive material and arranged uniformly. In this manner, dishing is prevented in the CMP process by forming the dummy patterns 30 that are evenly arranged in the scribe region 4.

In addition, as a method for preventing chipping generated in the dicing process, Patent Document 4 describes a process of forming a film peeling prevention groove by applying laser irradiation light at intervals on both sides of a dicing line on a semiconductor wafer. ing.
JP 2004-235357 A JP 2006-41244 A JP 2004-153015 A Japanese Patent Laid-Open No. 2007-48895

  However, in the conventional semiconductor device, although a process of forming a dummy pattern for preventing dishing and a process of forming a film peeling prevention groove using laser irradiation light are respectively mentioned, the diffusion formed in the scribe region is mentioned. No particular mention is made of the relationship between the layer conductive film, the wiring dummy pattern arrangement, and the laser grooving method. When the laser grooving method is used, when the laser light is transmitted to the diffusion layer, the laser light is absorbed by the diffusion layer conductive film installed in the diffusion layer, so that the diffusion layer conductive film is dissolved and the volume is expanded. The film peeling of the interlayer film occurs over a wide range. This peeling not only has a problem of moisture intrusion into the chip at this stage, but also becomes a starting point of chipping in the dicing process after laser grooving, and there is a concern that quality and reliability may be lowered.

  An object of the present invention is to prevent the occurrence of defects by chipping when a semiconductor substrate (wafer) is singulated using a laser grooving method.

  In order to achieve the above object, the present invention provides a semiconductor device in which a diffusion layer conductive film is not formed in a region of a scribe region irradiated with laser light in a dicing process or the like, or a diffusion layer conductive film is formed in a scribe region. In the case where there is, a dummy pattern is disposed in the interlayer insulating film so that the diffusion layer is not irradiated with laser light.

  Specifically, a first semiconductor device according to the present invention is provided in a semiconductor substrate, a diffusion layer conductive film provided on the semiconductor substrate, an interlayer insulating film stacked on the semiconductor substrate, and an interlayer insulating film. A plurality of circuit regions formed on a semiconductor substrate and a scribe region that is formed around the circuit region and separates each circuit region. The film is characterized in that it is not formed in at least a region of the scribe region irradiated with laser light.

  According to the first semiconductor device of the present invention, since the diffusion conductive film is not formed in the region irradiated with the laser light in the laser grooving process of the scribe region, when the laser light is absorbed in the diffusion layer conductive film, It is possible to prevent the diffusion layer conductive film from dissolving and volume expansion from occurring, and the interlayer insulating film from peeling off. For this reason, it is possible to prevent deterioration of the quality and reliability of the semiconductor device due to the irradiation with the laser beam.

  In the first semiconductor device of the present invention, it is preferable that the diffusion layer conductive film is not formed over the entire scribe region.

  In the first semiconductor device of the present invention, it is preferable that a wiring pattern and a via pattern are not formed in the scribe region.

  In this way, since there is no material that absorbs the laser light in the scribe region irradiated with the laser light, the interlayer insulating film can be uniformly dissolved by the laser light. Can be prevented.

  In the first semiconductor device of the present invention, the scribe region has a wiring pattern or a via pattern formed in a region excluding a region near the center line of the scribe region, and the wiring pattern or the via pattern formed in the scribe region is It is preferable that the distance straddling the region near the center line is larger toward the upper layer side of the interlayer insulating film.

  In this case, since no conductive member such as a diffusion layer conductive film, a wiring pattern, and a via pattern is formed in the scribe region to which the laser beam is irradiated when performing the laser grooving process, the laser beam is applied to the scribe region. There is no material to absorb. For this reason, since the uniform interlayer insulating film can be melted by the laser beam, it is possible to prevent the interlayer film from peeling off. In addition, since a wiring pattern or a via pattern is formed in a region other than the scribe region irradiated with the laser light, dishing that occurs in the CMP process can be prevented.

  A second semiconductor device according to the present invention includes a semiconductor substrate, a diffusion layer conductive film provided on the semiconductor substrate, a plurality of interlayer insulating films stacked on the semiconductor substrate, and a wiring pattern provided on the interlayer insulating film. And a plurality of circuit regions formed on the semiconductor substrate, and a scribe region formed around the circuit region and separating each circuit region, the scribe region being planar In view of this, at least a region of the scribe region irradiated with the laser light is covered with either one of the wiring patterns and via patterns formed in the plurality of interlayer insulating films.

  According to the second semiconductor device of the present invention, when performing the laser grooving process, the laser light is first absorbed by the wiring pattern or via pattern, and the laser light is absorbed by the wiring pattern or via pattern. As heat is generated, the interlayer insulating film is dissolved. This is because dissolution occurs at an upper layer side position in the interlayer insulating film layer, and the dissolved portion is sublimated and removed, so that it is enlarged sequentially. Therefore, uniform dissolution by laser light in a wide range of the scribe region, that is, the interlayer insulating film Layer removal can be performed. For this reason, even if the diffusion layer conductive film is formed in the scribe region to which the laser light is irradiated, the laser light is shielded by the wiring pattern or via pattern formed in the interlayer insulating film on the diffusion layer conductive film. Therefore, it is possible to prevent deterioration of the quality and reliability of the semiconductor device due to irradiation with the laser light.

  In the second semiconductor device of the present invention, it is preferable that the scribe region is entirely covered with each wiring pattern or via pattern formed in the plurality of interlayer insulating films in plan view.

  In the second semiconductor device of the present invention, a diffusion layer conductive film may be formed in the scribe region.

  In this way, the laser light during the laser grooving process is absorbed by the wiring pattern or via pattern formed in the interlayer insulating film on the diffusion layer conductive film, and the laser light is shielded by the wiring pattern or via pattern. The For this reason, it is possible to prevent the laser light from being absorbed by the diffusion layer conductive film, causing dissolution and volume expansion of the diffusion layer conductive film, and causing the interlayer insulating film to peel off. Accordingly, it is possible to prevent deterioration in quality and reliability of the semiconductor device due to irradiation with laser light.

  In the second semiconductor device of the present invention, the wiring patterns arranged in the plurality of interlayer insulating films formed in the scribe region may have at least ends of the wiring patterns overlapping each other in plan view. preferable.

  In this case, since the conductive material constituting the wiring pattern can be reduced, the laser light quantity of the laser light can be relatively reduced when performing the laser grooving process, and thus stable operation is possible. .

  Further, in the second semiconductor device of the present invention, the respective wiring patterns arranged in the plurality of interlayer insulating films formed in the scribe region are coincident with each other at the ends of the wiring patterns in a plan view. Is preferred.

  In this way, since the conductive material constituting the wiring pattern can be further reduced, the amount of laser light of the laser light can be relatively reduced when performing the laser grooving process, which enables stable operation. Become.

  In the second semiconductor device of the present invention, the wiring pattern formed in the scribe region is preferably formed in two or more interlayer insulating films from the upper layer among the plurality of interlayer insulating films.

  In this case, since the conductive material constituting the wiring pattern can be reduced, the laser light quantity of the laser light can be relatively reduced when performing the laser grooving process, and thus stable operation is possible. . Since the conductive material does not dissolve on the lower layer side of the interlayer insulating film, uniform dissolution by laser light, that is, removal of the interlayer insulating film layer can be performed over a wide range of the scribe region.

  In the second semiconductor device of the present invention, the wiring pattern formed in the scribe region is preferably formed in two or more interlayer insulating films from the lower layer among the plurality of interlayer insulating films.

  In this case, since a finer wiring pattern can be formed on the upper side of the interlayer insulating film, the heat generation and dissolution reaction due to the laser beam can be generated more uniformly. Therefore, uniform dissolution by laser light, that is, removal of the interlayer insulating film layer can be performed over a wide range of the scribe region.

  The third semiconductor device of the present invention is directed to a semiconductor device comprising a semiconductor substrate, a diffusion layer conductive film provided on the semiconductor substrate, and an interlayer insulating film having a wiring pattern stacked on the semiconductor substrate. A plurality of circuit regions formed on the substrate; and a scribe region formed around the circuit region and separating each circuit region, wherein the scribe region has at least a region that is irradiated with the laser beam in the form of a flat plate-like wiring A pattern is formed.

  According to the third semiconductor device of the present invention, the laser light irradiated when performing the laser grooving process can be reliably absorbed by the flat wiring pattern. Since the dissolution reaction proceeds from the upper layer side of the interlayer insulating film layer by the laser beam and proceeds to the lower layer side in sequence, the upper interlayer insulating film is removed. Therefore, uniform dissolution by laser light, that is, removal of the interlayer insulating film layer can be performed over a wide range of the scribe region. For this reason, even if the diffusion layer conductive film is formed in the scribe region irradiated with the laser light, the laser light is shielded by the wiring pattern formed in the interlayer insulating film on the diffusion layer conductive film. It is possible to prevent deterioration in quality and reliability of the semiconductor device due to irradiation with laser light.

  A fourth semiconductor device of the present invention includes a semiconductor substrate, a diffusion layer conductive film provided on the semiconductor substrate, an interlayer insulating film laminated on the semiconductor substrate, and a wiring pattern and a via pattern provided on the interlayer insulating film. And a plurality of circuit regions formed on the semiconductor substrate, and a scribe region that is formed around the circuit region and separates each circuit region. Of the scribe region, at least a region irradiated with laser light is covered with respective wiring patterns and via patterns formed in a plurality of interlayer insulating films.

  According to the fourth semiconductor device of the present invention, when performing the laser grooving process, the laser light is first absorbed by the wiring pattern and the via pattern, and the laser light is absorbed by the wiring pattern and the via pattern. As heat is generated, the interlayer insulating film is dissolved. This is because dissolution occurs at an upper layer side position in the interlayer insulating film layer, and the dissolved portion is sublimated and removed, so that it is enlarged sequentially. Therefore, uniform dissolution by laser light in a wide range of the scribe region, that is, the interlayer insulating film Layer removal can be performed. For this reason, since the laser beam is shielded by the wiring pattern and via pattern formed in the interlayer insulating film, it is possible to prevent deterioration of the quality and reliability of the semiconductor device due to the laser beam irradiation.

  In the fourth semiconductor device of the present invention, it is preferable that the wiring pattern and the via pattern are formed in a plurality of interlayer insulating films and cover the entire scribe region in plan view.

  In the fourth semiconductor device of the present invention, it is preferable that the wiring pattern is formed over the entire scribe region, and the via pattern is formed only in the upper layer in the region near the center line of the scribe region.

  In this case, since the wiring pattern and the via pattern are formed in the upper layer of the thick interlayer insulating film, the dissolution of the interlayer insulating film by the laser light is sequentially expanded from the upper layer side to the lower layer. Can be dissolved and removed uniformly.

  In the fourth semiconductor device of the present invention, a diffusion layer conductive film may be formed in the scribe region.

  In this way, the laser light during the laser grooving process is absorbed by the wiring pattern and via pattern formed in the interlayer insulating film on the diffusion layer conductive film, and the laser light is shielded by the wiring pattern and via pattern. The For this reason, it is possible to prevent the laser light from being absorbed by the diffusion layer conductive film, causing dissolution and volume expansion of the diffusion layer conductive film, and causing the interlayer insulating film to peel off. Accordingly, it is possible to prevent deterioration in quality and reliability of the semiconductor device due to irradiation with laser light.

  In the fourth semiconductor device of the present invention, the wiring pattern and the via pattern are preferably connected to each other.

  According to the semiconductor device of the present invention, when the semiconductor substrate (wafer) is singulated using the laser grooving method, the uniform interlayer film can be removed by the laser beam, so that the occurrence of defects due to chipping can be prevented. it can.

(First embodiment)
A first embodiment of the present invention will be described with reference to the drawings.

  FIG. 1 shows a planar configuration of a wafer level semiconductor device according to the first embodiment.

  As shown in FIG. 1, the semiconductor device according to the first embodiment includes a functional element (not shown) electrically connected to a wafer-like semiconductor substrate 1 by wiring and vias connected to the wiring. Are formed in a matrix at intervals. Each circuit region 2 is surrounded by an annular seal ring 3 including one or more lines of line vias. Here, the line via refers to, for example, a line-shaped via connected along a line-shaped wiring formed in the first interlayer insulating film. In the first embodiment, two rows of line vias are formed. In addition, a scribe region 4 is formed between adjacent circuit regions, that is, on the outer periphery of the seal ring 3, which is a margin for cutting the circuit region 2 from the semiconductor device 1.

  2 shows a plan configuration in which a scribe region 4 provided between adjacent circuit regions 2 is partially enlarged, and FIG. 3 shows a cross-sectional configuration taken along line III-III in FIG. In FIG. 2, the upper surface of one of the plurality of first interlayer insulating films constituting the scribe region 4 is shown.

  As shown in FIG. 2, the scribe region 4 is formed between circuit regions 2 adjacent to each other. That is, the scribe region 4 is arranged on the outer periphery of the seal ring 3 formed around each circuit region 2. In the singulation process, the blade dicing area 5 disposed in the central part of the circuit areas 2 adjacent to each other in the scribe area 4 is cut.

  As shown in FIG. 3, the semiconductor device according to the first embodiment has a stacked structure in which the first interlayer insulating film 6 and the second interlayer insulating film 7 are alternately stacked on the semiconductor substrate 1. have. Although the circuit region 2 shown in FIG. 3 is not shown because only a part thereof is shown, the first interlayer insulating film 6 in the circuit region 2 includes wiring and dummy wiring, and the second interlayer in the circuit region 2 is shown. The insulating film 7 includes vias and dummy vias, and a wiring pattern made of wiring and vias, and a dummy wiring made of the same conductive material as the wiring pattern and a dummy pattern made of dummy vias are formed. In the first embodiment, no diffusion layer conductive film is formed in the scribe region 4, and the first interlayer insulating film 6 and the second interlayer insulating film 7 in the scribe region 4 are the same as the wiring pattern. The dummy wiring made of the conductive material and the dummy pattern made of the dummy via are not formed.

  Further, a first protective film 8a and a second protective film 8b made of an insulating material are sequentially stacked on the uppermost layer of the interlayer insulating film made up of a plurality of layers. The first protective film 8 a and the second protective film 8 b are divided between the circuit region 2 and the scribe region 4, and the end portion of the first protective film 8 formed in the circuit region 2 is electrically conductive. A buried film 9 made of a conductive material is formed. A resin protective film 10 made of an insulating material is formed on the second protective film 8b formed in the circuit region 2. Although illustration is omitted, an etching stop film, a cap film, or the like may be formed between the first interlayer insulating film 6 and the second interlayer insulating film 7.

  Further, as shown in FIG. 3, in the singulation process, the laser beam 11 for performing the laser grooving process irradiates the blade dicing area 5 which is the central part of the scribe area 4 sandwiched between the circuit areas 2 adjacent to each other. To do.

  As described above, in the semiconductor device according to the first embodiment, the diffusion layer conductive film is not formed between the semiconductor substrate 1 and the interlayer insulating film, and the wiring and the via are also formed in the scribe region 4. Absent. A laser grooving process is performed on the scribe region 4 of the semiconductor device according to the first embodiment, in which conductive members such as diffusion layer conductive films, wirings, and vias are not formed, and then cut.

  FIG. 4 shows a cross-sectional configuration in which a laser grooving process is performed on a scribe region 4 where a diffusion layer conductive film, wiring, vias, and the like are not formed.

  As shown in FIG. 4, since there is no conductive member such as a diffusion layer conductive film made of a material that absorbs the laser light 11 in the scribe region 4 according to the first embodiment, in a wide range of the scribe region 4, Uniform dissolution by the laser beam 11 can be performed on the plurality of first interlayer insulating films 6 and the second interlayer insulating film 7. For this reason, generation | occurrence | production of film | membrane peeling of an interlayer insulation film can be prevented. Further, by irradiating the scribe region 4 with the laser beam 11 for an appropriate length of time, a groove can be formed on the surface of the scribe region 4 formed on the semiconductor substrate 1. That is, a region where no interlayer insulating film exists is formed in the blade dicing region 5. In this case, when performing blade dicing on the subsequent blade dicing region 5, the first interlayer insulating film 6 and the second interlayer insulating film 7 that are likely to generate chipping are removed. Since it is only necessary to cut the semiconductor substrate 1 made of one material, the possibility of occurrence of chipping defects can be greatly reduced. Accordingly, it is possible to prevent chipping defects that occur in the singulation process of cutting out the circuit region 2 from the semiconductor substrate 1.

  In the first embodiment, the width of the scribe region 4 is, for example, about 60 μm to 150 μm, and the width of the blade dicing region 5 located at the center thereof is equal to or slightly larger than that of the dicing blade, for example, about 30 μm to 70 μm. It is.

  Further, for the first interlayer insulating film 6 and the second interlayer insulating film 7 made of an insulating material, TEOS (Tetra Ethyl Ortho Silicate) or FSG (Fluoro Silicate Glass) can be generally used. Further, the materials of the first interlayer insulating film 6 and the second interlayer insulating film 7 are various low dielectric constants such as silicon oxide carbide (SiOC) or porous film instead of an insulating material such as TEOS or FSG. A membrane may be used. The first interlayer insulating film 6 and the second interlayer insulating film 7 may be made of the same material or different materials.

  In FIGS. 3 and 4, the illustration is simplified and all the layers of the first interlayer insulating film 6 and the second interlayer insulating film 7 are shown to have the same film thickness. The film 6 and the second interlayer insulating film 7 may have the same film thickness or different film thicknesses. For example, a low dielectric constant film having a thickness of about 100 nm to 300 nm is used for the first interlayer insulating film 6 and the second interlayer insulating film 7 in the lower layer side of the laminated structure, that is, in the vicinity of the semiconductor substrate 1, and in the vicinity of the upper layer side An interlayer insulating film made of TEOS or the like having a film thickness of about 300 nm to 1500 nm may be used for the first interlayer insulating film 6 and the second interlayer insulating film 7 on the side to be processed. Further, an interlayer insulating film made of TEOS or the like having a thickness of about 200 nm to 500 nm may be used for the intermediate layer portion.

  In the first embodiment, the interlayer insulating film in the scribe region 4 is formed of a plurality of layers. Instead, as shown in FIG. 5, the first interlayer insulating film 6 and the second interlayer insulating film 6 are formed. An interlayer insulating film in which the interlayer insulating film 7 is formed one by one may be used.

  The dummy wirings and dummy vias constituting the dummy pattern formed in the circuit region 2 can be simultaneously formed in the step of forming the wirings and vias constituting the wiring pattern using the damascene method or the like in the circuit region 2. Here, the wiring, the dummy wiring, the via, and the dummy via can be formed of a conductive material such as copper or a copper alloy, respectively. A barrier film (not shown) for preventing diffusion made of a thin film such as titanium nitride (TiN) may be provided at the interface between the first interlayer insulating film 6 and the second interlayer insulating film 7.

  In general, the first protective film 8a and the second protective film 8b formed on the upper surface of the uppermost first interlayer insulating film 6 are pad portions (not shown) made of a conductive material such as aluminum (Al). Is made of silicon nitride (SiN) or the like having an opening in the opening. Here, a two-layer structure including the protective films 8a and 8b is used, but a single layer or three or more layers may be used. Further, the buried film 9 formed at the end portion of the first protective film 8a formed in the circuit region 2 and embedded in the gap between the first protective film 8a and the second protective film 8b is made of a conductive material such as Al. It can be formed of a material. For example, the buried film 9 can be formed simultaneously with the pad portion in the step of forming the pad portion. With this configuration, it is possible to reduce damage such as chipping that occurs during cutting in the singulation process.

  In the first embodiment, the seal ring 3 is doubly formed on the outer periphery of the circuit region 2 of the semiconductor substrate 1, and as described above, the line-shaped (line-shaped) wiring pattern and the line via are alternately arranged. It is formed by stacking. As a result of the sealing of the seal ring 3 configured as described above, the circuit region 2 and the outside are shut off, so that the circuit region 2 can be prevented from being contaminated by water or impurities. Here, the seal ring 3 can be formed of the same material in the same process as the wiring pattern formed in the circuit region 2. Moreover, the seal ring 3 does not necessarily need to be formed in double, and may be provided in a single or triple or more.

(Second Embodiment)
A second embodiment of the present invention will be described with reference to the drawings. In the following examples and modifications, the same components as those of the first embodiment are denoted by the same reference numerals, and description thereof is omitted. In the second embodiment, a dummy pattern including a dummy wiring or a dummy via is formed in the scribe region 4.

  FIG. 6 shows a plan configuration in which a scribe region 4 provided between adjacent circuit regions 2 is partially enlarged. FIG. 6A shows the first interlayer insulating film 6 in which the first dummy pattern 12 composed of the wiring pattern among the plurality of first interlayer insulating films 6 is formed, and FIG. A first interlayer insulating film 6 is shown in which a second dummy pattern 13 made of a wiring pattern among a plurality of first interlayer insulating films 6 is formed. FIG. 7 shows a cross-sectional configuration taken along line VI-VI in FIGS. 6 (a) and 6 (b).

  As shown in FIGS. 6A, 6B, and 7, the first dummy pattern 12 formed in the first interlayer insulating film 6 has the same conductive material as the wiring pattern in a lattice pattern. The second dummy pattern 13 is disposed, and a conductive material is disposed at a position where the first dummy pattern 12 is inverted. At this time, the scribe region 4, particularly the blade dicing region 5, is disposed so that there is no portion where the dummy pattern is not disposed in plan view, but the diffusion layer conductive film is not disposed. Thus, by arranging the first dummy pattern 12 and the second dummy pattern 13, the laser beam 11 at the time of laser grooving is arranged so as to be shielded by the conductive material. The scribe region 4 is covered with a conductive material. Note that copper, aluminum, tungsten, or the like is used as the conductive material.

  FIG. 8 shows a cross-sectional configuration in which laser grooving processing is performed on the scribe region 4 in the second embodiment.

  As shown in FIG. 8, the first interlayer insulating film 6 and the second interlayer insulating film 7 are dissolved by irradiating the scribe region 4 with a laser beam 11 for an appropriate length of time, and further, the semiconductor substrate Grooves can be formed on the surface of 1.

  With this configuration, when performing the laser grooving process, the laser beam 11 is first absorbed by the first dummy pattern 12 or the second dummy pattern 13, and the laser beam 11 becomes a dummy pattern. Since heat is generated as it is absorbed, the interlayer insulating film dissolves. This is because the dissolution occurs at the upper layer side position in the first interlayer insulating film 6 and the second interlayer insulating film 7, and the dissolved portion is sublimated and expanded sequentially, so that a wide range of the scribe region 4 is obtained. Thus, uniform dissolution by the laser beam 11, that is, removal of the first interlayer insulating film 6 and the second interlayer insulating film 7 can be performed. In this manner, since laser grooving that prevents the interlayer insulating film from peeling off can be performed, it is possible to prevent the interlayer insulating film from peeling off.

  Thereafter, as in the first embodiment, when blade dicing is performed on the blade dicing area 5, the first interlayer insulating film 6 that is likely to generate chipping in the blade dicing area 5 in the scribe area 4 is used. Since the second interlayer insulating film 7 is removed, only the single-material semiconductor substrate 1 needs to be cut, so that the possibility of chipping defects can be greatly reduced. Accordingly, it is possible to prevent chipping defects that occur in the singulation process of cutting out the circuit region 2 from the semiconductor substrate 1.

  In the second embodiment, the first dummy pattern 12 and the second dummy pattern 13 are formed by a wiring pattern, but may be formed by a via pattern.

  Note that the dummy wirings or dummy vias forming the first dummy pattern 12 and the second dummy pattern 13 formed in the scribe region 4 are formed in the circuit region 2 by using a damascene process or the like. At the same time, it can be formed using the same material.

  In the second embodiment, the first dummy pattern 12 and the second dummy pattern 13 are formed so that dummy wirings or dummy vias are arranged in a matrix, respectively, but cover the scribe region 4. If it is formed in, it does not have to be a matrix arrangement.

  Moreover, what is necessary is just to form so that the scribe area | region 4 may be covered combining 2 or more dummy patterns.

  In the second embodiment, the dummy pattern is formed only on the first interlayer insulating film 6, but the dummy pattern may be formed on the second interlayer insulating film 7.

(First Modification of Second Embodiment)
A first modification of the second embodiment of the present invention will be described with reference to the drawings. The first modification of the second embodiment is characterized in that a diffusion layer conductive film 14 is formed between the semiconductor substrate 1 and the interlayer insulating film.

  FIG. 9 shows a cross-sectional configuration of a semiconductor device according to a first modification of the second embodiment, and shows a scribe region 4 provided between the circuit regions 2 as in FIGS. 3 and 7. .

  As shown in FIG. 9, in the semiconductor device according to the first modification, a diffusion layer conductive film 14 is formed between the semiconductor substrate 1 and the interlayer insulating film in the scribe region 4 in addition to the configuration of the second embodiment. Has been. Here, as the material of the diffusion layer conductive film 14, polysilicon, tungsten, nickel compounds, or the like can be used.

  Thus, even if the diffusion layer conductive film 14 is formed, the first dummy pattern 12 and the second dummy pattern 13 are configured to cover the scribe region 4 in the semiconductor substrate 1. When performing, the laser beam 11 is first absorbed by the first dummy pattern 12 or the second dummy pattern 13, and heat is generated as the laser beam 11 is absorbed by the dummy pattern. Dissolution of the interlayer insulating film occurs. This is the same as in the second embodiment, in which dissolution occurs at positions on the upper layer side of the first interlayer insulating film 6 and the second interlayer insulating film 7, and the dissolved portion is sublimated and removed. Therefore, uniform dissolution by the laser beam 11, that is, removal of the first interlayer insulating film 6 and the second interlayer insulating film 7 can be performed in a wide range of the scribe region 4. As described above, since the interlayer insulating film is dissolved and removed before the diffusion layer conductive film 14 is irradiated with the laser beam 11, the interlayer insulating film is affected by the dissolution of the diffusion layer conductive film 14. Therefore, the peeling of the interlayer insulating film can be prevented.

  Thereafter, as in the first embodiment, when blade dicing is performed on the blade dicing region 5, the first interlayer insulating film 6 and the second interlayer insulating film 7 that are likely to cause chipping are removed. Therefore, since only the single material semiconductor substrate 1 has to be cut, the possibility of occurrence of chipping defects can be greatly reduced. Accordingly, it is possible to prevent chipping defects that occur in the singulation process of cutting out the circuit region 2 from the semiconductor substrate 1.

(Second modification of the second embodiment)
A second modification of the second embodiment of the present invention will be described with reference to the drawings.

  FIG. 10 shows a cross-sectional configuration of a semiconductor device according to a second modification of the second embodiment, and shows a scribe region 4 provided between the circuit regions 2.

  As shown in FIG. 10, in the semiconductor device according to the second modification, the first dummy pattern 12 and the second dummy pattern 13 are formed in the first interlayer insulating film 6 as in the second embodiment. However, no dummy pattern is formed between the first interlayer insulating film 6 in which the first dummy pattern 12 is formed and the first interlayer insulating film 6 in which the second dummy pattern 13 is formed. In this configuration, an interlayer insulating film 6 is disposed. Even in such a configuration, the first dummy pattern 12 and the second dummy pattern 13 cover the scribe region 4 in the semiconductor substrate 1, and the first dummy pattern 12 and the second dummy pattern 13 are covered. Both of them are arranged so that there is no part where they are not arranged.

  With this configuration, when performing the laser grooving process, the laser beam 11 is first absorbed by the first dummy pattern 12 or the second dummy pattern 13, and the laser beam 11 becomes a dummy pattern. Since heat is generated as it is absorbed, the interlayer insulating film dissolves. This is because the dissolution occurs at the upper layer side position in the first interlayer insulating film 6 and the second interlayer insulating film 7, and the dissolved portion is sublimated and expanded sequentially, so that a wide range of the scribe region 4 is obtained. Thus, uniform dissolution by the laser beam 11, that is, removal of the first interlayer insulating film 6 and the second interlayer insulating film 7 can be performed. In this manner, since laser grooving that prevents the interlayer insulating film from peeling off can be performed, it is possible to prevent the interlayer insulating film from peeling off.

  Even if the diffusion layer conductive film is formed between the semiconductor substrate 1 and the interlayer insulating film, the diffusion layer conductive film is irradiated with the laser beam 11 as in the first modification of the second embodiment. Since the interlayer insulating film has been dissolved and removed before that, the interlayer insulating film is not affected by film peeling or the like due to the dissolution of the diffusion layer conductive film.

  Thereafter, as in the first embodiment, when blade dicing is performed on the blade dicing region 5, the first interlayer insulating film 6 and the second interlayer insulating film 7 that are likely to cause chipping are removed. Therefore, since only the single material semiconductor substrate 1 has to be cut, the possibility of occurrence of chipping defects can be greatly reduced. Accordingly, it is possible to prevent chipping defects that occur in the singulation process of cutting out the circuit region 2 from the semiconductor substrate 1.

  In the second modification, a dummy pattern is formed between the first interlayer insulating film 6 on which the first dummy pattern is formed and the first interlayer insulating film on which the second dummy pattern is formed. Although the configuration in which the first interlayer insulating film that is not formed is illustrated, it is not limited to such a configuration. That is, the scribe region 4 may be formed so as to cover the scribe region 4 by combining two or more dummy patterns, or may be formed so as to cover the scribe region 4 including the dummy pattern formed in the second interlayer insulating film. Good.

  The interlayer insulating film for forming the dummy pattern may be appropriately selected according to the wiring pattern or via pattern formed in the circuit region 2.

(Third Modification of Second Embodiment)
A third modification of the second embodiment of the present invention will be described with reference to the drawings.

  FIG. 11 shows a cross-sectional configuration of a semiconductor device according to a third modification of the second embodiment, and shows a scribe region 4 provided between the circuit regions 2.

  As shown in FIG. 11, in the semiconductor device according to the third modification, the first dummy pattern 12 and the second dummy pattern 13 formed in the first interlayer insulating film 6 overlap only at the edge portion. Similar to the second modification example, the first interlayer insulating film 6 is formed in which a dummy pattern is not formed.

  With this configuration, the scribe region 4 is covered with the dummy pattern in a plan view, and the total amount of dummy patterns formed in the scribe region 4 can be reduced. Since the laser light quantity of the light 11 can be relatively reduced, stable operation is possible. In this way, uniform dissolution by the laser beam 11, that is, removal of the first interlayer insulating film 6 and the second interlayer insulating film 7 can be performed over a wide range of the scribe region 4. For this reason, generation | occurrence | production of film | membrane peeling of an interlayer insulation film can be prevented.

  In the third modification of the second embodiment, the first dummy pattern 12 and the second dummy pattern 13 are overlapped only at the edge portion. However, the same effect can be obtained when the edge portions are matched. Can be obtained.

  Even if the diffusion layer conductive film is formed between the semiconductor substrate 1 and the interlayer insulating film, the diffusion layer conductive film is irradiated with the laser beam 11 as in the first modification of the second embodiment. Since the interlayer insulating film has been dissolved and removed before that, the interlayer insulating film is not affected by film peeling or the like due to the dissolution of the diffusion layer conductive film.

  Thereafter, as in the first embodiment, when blade dicing is performed on the blade dicing region 5, the first interlayer insulating film 6 and the second interlayer insulating film 7 that are likely to cause chipping are removed. Therefore, since only the single material semiconductor substrate 1 has to be cut, the possibility of occurrence of chipping defects can be greatly reduced. Accordingly, it is possible to prevent chipping defects that occur in the singulation process of cutting out the circuit region 2 from the semiconductor substrate 1.

  As in the second embodiment, a dummy pattern different from the first dummy pattern 12 and the second dummy pattern 13 may be used, and the edge portions of the patterns overlap each other when forming the dummy pattern. Two or more dummy patterns may be combined if they are arranged so as to cover the scribe region 4. Further, a dummy pattern may be formed on the second interlayer insulating film 7 and combined with the dummy pattern formed on the first interlayer insulating film 6.

(Fourth modification of the second embodiment)
A fourth modification of the second embodiment of the present invention will be described with reference to the drawings.

  FIG. 12 shows a cross-sectional configuration of a semiconductor device according to a fourth modification of the second embodiment, and shows a scribe region 4 provided between the circuit regions 2.

  As shown in FIG. 12, in the semiconductor device according to the fourth modification, the edge portions of the first dummy pattern 12 and the second dummy pattern 13 formed in the first interlayer insulating film 6 are not shifted and overlapped. As in the second modified example, the first interlayer insulating film 6 is formed in which no dummy pattern is formed.

  By adopting such a configuration, the scribe region 4 is almost covered with the pair of first dummy patterns 12 and the second dummy pattern 13 in plan view, and the other pair of first dummy patterns 12 and By overlapping the second dummy pattern 13, the scribe area can be covered. For this reason, since the total amount of dummy patterns formed in the scribe region 4 can be reduced, the laser light amount of the laser light 11 can be relatively reduced when performing the laser grooving process, and thus stable operation is possible. It becomes. Even with such a configuration, uniform dissolution by the laser beam 11, that is, removal of the first interlayer insulating film 6 and the second interlayer insulating film 7 can be performed over a wide range of the scribe region 4. . In this manner, since laser grooving that prevents the interlayer insulating film from peeling off can be performed, it is possible to prevent the interlayer insulating film from peeling off.

  Even if the diffusion layer conductive film is formed between the semiconductor substrate 1 and the interlayer insulating film, the diffusion layer conductive film is irradiated with the laser beam 11 as in the first modification of the second embodiment. Since the interlayer insulating film has been dissolved and removed before that, the interlayer insulating film is not affected by film peeling or the like due to the dissolution of the diffusion layer conductive film.

  Thereafter, as in the first embodiment, when blade dicing is performed on the blade dicing region 5, the first interlayer insulating film 6 and the second interlayer insulating film 7 that are likely to cause chipping are removed. Therefore, since only the single material semiconductor substrate 1 has to be cut, the possibility of occurrence of chipping defects can be greatly reduced. Accordingly, it is possible to prevent chipping defects that occur in the singulation process of cutting out the circuit region 2 from the semiconductor substrate 1.

  Note that the configuration is not limited to the configuration illustrated in FIG. 12, as is the case with the second embodiment described above and the modifications thereof.

(Fifth Modification of Second Embodiment)
A fifth modification of the second embodiment of the present invention will be described with reference to the drawings.

  FIG. 13 shows a cross-sectional configuration of a semiconductor device according to a fifth modification of the second embodiment, and shows a scribe region 4 provided between the circuit regions 2.

  As shown in FIG. 13, the semiconductor device according to the fifth modification includes a first dummy pattern 12 and two upper layers among the plurality of first interlayer insulating films 6 formed on the semiconductor substrate 1. A second dummy pattern 13 is formed.

  By adopting such a configuration, even when the total amount of dummy patterns formed in the scribe region 4 is further reduced, the scribe region 4 can be covered with the dummy pattern in a plan view. In addition, since the amount of laser light 11 can be relatively reduced, stable operation is possible. Further, since no dummy pattern is formed on the lower layer side of the first interlayer insulating film 6 and the second interlayer insulating film 7 formed on the semiconductor substrate 1, the melting of the dummy metal does not occur. Therefore, uniform dissolution by the laser beam 11, that is, removal of the first interlayer insulating film 6 and the second interlayer insulating film 7 can be performed in a wide range of the scribe region 4. In this manner, since laser grooving that prevents the interlayer insulating film from peeling off can be performed, it is possible to prevent the interlayer insulating film from peeling off.

  Even if the diffusion layer conductive film is formed between the semiconductor substrate 1 and the interlayer insulating film, the diffusion layer conductive film is irradiated with the laser beam 11 as in the first modification of the second embodiment. Since the interlayer insulating film has been dissolved and removed before that, the interlayer insulating film is not affected by film peeling or the like due to the dissolution of the diffusion layer conductive film.

  Thereafter, blade dicing is performed on the blade dicing area 5 as in the first embodiment. In the blade dicing region 5 in the scribe region 4, the first interlayer insulating film 6 and the second interlayer insulating film 7, which are likely to generate chipping, are removed, so that only the single material semiconductor substrate 1 is cut. Therefore, the possibility of occurrence of chipping failure can be greatly reduced. Accordingly, it is possible to prevent chipping defects that occur in the singulation process of cutting out the circuit region 2 from the semiconductor substrate 1.

(Sixth Modification of Second Embodiment)
A sixth modification of the second embodiment of the present invention will be described with reference to the drawings.

  FIG. 14 shows a cross-sectional configuration of a semiconductor device according to a sixth modification of the second embodiment, and shows a scribe region 4 provided between the circuit regions 2.

  As shown in FIG. 14, the semiconductor device according to the sixth modification is the first interlayer insulating film 6 on the lower layer side among the plurality of first interlayer insulating films 6 formed on the semiconductor substrate 1. The first dummy pattern 12 and the second dummy pattern 13 are formed in a fine layer used for normal circuit formation.

  By adopting such a configuration, the first dummy pattern 12 and the second dummy pattern 13 can be formed so as to cover the scribe region 4 in a finer arrangement than that formed on the upper layer side. Therefore, heat generation and dissolution reaction due to the laser beam 11 can be generated more uniformly. Therefore, uniform dissolution by the laser beam 11, that is, removal of the first interlayer insulating film 6 and the second interlayer insulating film 7 can be performed in a wide range of the scribe region 4. In this manner, since laser grooving that prevents the interlayer insulating film from peeling off can be performed, it is possible to prevent the interlayer insulating film from peeling off.

  Even if the diffusion layer conductive film is formed between the semiconductor substrate 1 and the interlayer insulating film, the diffusion layer conductive film is irradiated with the laser beam 11 as in the first modification of the second embodiment. Since the interlayer insulating film has been dissolved and removed before that, the interlayer insulating film is not affected by film peeling or the like due to the dissolution of the diffusion layer conductive film.

  Thereafter, blade dicing is performed on the blade dicing area 5 as in the first embodiment. In the blade dicing region 5 in the scribe region 4, the first interlayer insulating film 6 and the second interlayer insulating film 7, which are likely to generate chipping, are removed, so that only the single material semiconductor substrate 1 is cut. Therefore, the possibility of occurrence of chipping failure can be greatly reduced. Accordingly, it is possible to prevent chipping defects that occur in the singulation process of cutting out the circuit region 2 from the semiconductor substrate 1.

  In the sixth modification of the second embodiment, the first dummy pattern 12 and the second dummy pattern 13 are formed in the lower four layers corresponding to the fine layer in the first interlayer insulating film. However, the present invention is not limited to this, and the first dummy pattern 12 and the second dummy pattern 13 may be formed only in the two lower layers, and the first dummy pattern 12 and the second dummy pattern 12 may be formed. A first interlayer insulating film 6 in which no dummy pattern is formed may be formed between the first interlayer insulating films 6 on which the dummy patterns 13 are formed.

(Seventh Modification of Second Embodiment)
A seventh modification of the second embodiment of the present invention will be described with reference to the drawings.

  FIG. 15 shows a cross-sectional configuration of a semiconductor device according to a seventh modification of the second embodiment, and shows a scribe region 4 provided between the circuit regions 2.

  As shown in FIG. 15, the semiconductor device according to the seventh modification includes the seal ring 3 excluding the blade dicing region 5 in the scribe region 4 of the plurality of first interlayer insulating films 6 formed on the semiconductor substrate 1. The first dummy pattern 12 and the second dummy pattern 13 are formed on the portions adjacent to each other, that is, on both sides of the blade dicing region 5, and the region where the dummy pattern including the blade dicing region 5 is not formed is The upper interlayer insulating film 6 is larger in size.

  With such a configuration, dissolution of the scribe region 4 with the laser light 11 absorbs the laser light 11 into the first interlayer insulating film 6 and the second interlayer insulating film 7 in the portion irradiated with the laser light 11. There is almost no material. Further, since the release direction of the exothermic reaction by the laser beam 11 is opposite to the semiconductor substrate 1, laser grooving that does not damage the semiconductor substrate 1 can be realized.

  Therefore, uniform dissolution by the laser beam 11, that is, removal of the first interlayer insulating film 6 and the second interlayer insulating film 7 can be performed in a wide range of the scribe region 4. In this manner, since laser grooving that prevents the interlayer insulating film from peeling off can be performed, it is possible to prevent the interlayer insulating film from peeling off.

  Thereafter, blade dicing is performed on the blade dicing area 5 as in the first embodiment. In the blade dicing region 5 in the scribe region 4, the first interlayer insulating film 6 and the second interlayer insulating film 7, which are likely to generate chipping, are removed, so that only the single material semiconductor substrate 1 is cut. Therefore, the possibility of occurrence of chipping failure can be greatly reduced. Accordingly, it is possible to prevent chipping defects that occur in the singulation process of cutting out the circuit region 2 from the semiconductor substrate 1.

  In the seventh modification of the second embodiment, the first dummy pattern 12 and the second dummy pattern 13 are formed while avoiding the blade dicing area 5 in the scribe area 4, but the present invention is limited to this configuration. Instead, a plurality of dummy patterns or flat dummy patterns may be used to cover the scribe area 4 except for the blade dicing area 5.

  In the seventh modification of the second embodiment, the interlayer insulating film in the scribe region 4 is formed of a plurality of layers. Instead, as shown in FIG. 16, the first interlayer insulating film 6 and the second interlayer insulating film 7 may be an interlayer insulating film formed one by one.

(Eighth Modification of Second Embodiment)
An eighth modification of the second embodiment of the present invention will be described with reference to the drawings.

  FIG. 17 shows a cross-sectional configuration of a semiconductor device according to an eighth modification of the second embodiment, and shows a scribe region 4 provided between the circuit regions 2.

  As shown in FIG. 17, the semiconductor device according to the eighth modification includes a first interlayer insulating film 6 formed on the upper layer side among the plurality of first interlayer insulating films 6 formed on the semiconductor substrate 1. In addition, a third dummy pattern 15 covering the entire laser grooving region 5 is formed.

  With such a configuration, the laser beam 11 irradiated in the laser grooving process can be reliably blocked by the third dummy pattern 15 formed in the first interlayer insulating film 6. The diffusion reaction formed between the semiconductor substrate 1 and the interlayer insulating film because the dissolution reaction of the third dummy pattern 15 proceeds from the upper layer side of the first interlayer insulating film 6 by the laser beam 11 and proceeds to the lower layer side sequentially. When the laser beam 11 reaches the layer conductive film, the upper interlayer insulating film is removed. Therefore, uniform dissolution by the laser beam 11, that is, removal of the first interlayer insulating film 6 and the second interlayer insulating film 7 can be performed in a wide range of the scribe region 4. In this manner, since laser grooving that prevents the interlayer insulating film from peeling off can be performed, it is possible to prevent the interlayer insulating film from peeling off.

  Even if the diffusion layer conductive film is formed between the semiconductor substrate 1 and the interlayer insulating film, the diffusion layer conductive film is irradiated with the laser beam 11 as in the first modification of the second embodiment. Since the interlayer insulating film has been dissolved and removed before that, the interlayer insulating film is not affected by film peeling or the like due to the dissolution of the diffusion layer conductive film.

  Thereafter, blade dicing is performed on the blade dicing area 5 as in the first embodiment. In the blade dicing region 5 in the scribe region 4, the first interlayer insulating film 6 and the second interlayer insulating film 7, which are likely to generate chipping, are removed, so that only the single material semiconductor substrate 1 is cut. Therefore, the possibility of occurrence of chipping failure can be greatly reduced. Accordingly, it is possible to prevent chipping defects that occur in the singulation process of cutting out the circuit region 2 from the semiconductor substrate 1.

  In the eighth modification, the third dummy pattern 15 is formed in five layers on the upper layer side of the first interlayer insulating film 6, but is not limited to five layers, and the third dummy pattern 15 is formed on the upper layer side. There is a first interlayer insulating film that does not form the dummy pattern 15 and may not be formed in a continuous layer. Further, it may be formed on the second interlayer insulating film 7.

  Further, in the eighth modification of the second embodiment, the interlayer insulating film in the scribe region 4 is formed of a plurality of layers, but instead of this, as shown in FIG. 18, the first interlayer insulating film 6 and the second interlayer insulating film 7 may be an interlayer insulating film formed one by one.

(Third embodiment)
A third embodiment of the present invention will be described with reference to the drawings. In the following examples, the same components as those of the first embodiment are denoted by the same reference numerals, and description thereof is omitted. In the third embodiment, a dummy pattern including dummy vias 16 is formed in the scribe region 4.

  FIG. 19 shows a semiconductor device according to the third embodiment, and shows a cross-sectional configuration of a scribe region 4 provided between circuit regions 2 adjacent to each other.

  As shown in FIG. 19, in the semiconductor device according to the third embodiment, a dummy pattern including a plurality of dummy vias 16 formed in a plurality of interlayer insulating films 6 is formed. In particular, the dummy pattern is formed so that there is no portion where the dummy via 16 is not formed in the blade dicing region 5.

  As described above, when the dummy via 16 is formed so as to cover the scribe region 4 in a plan view, the scribe region 4 is covered with the conductive material constituting the dummy via 16, so that the laser light 11 at the time of laser grooving is conductive. Shielded by material. Therefore, when the laser grooving process is performed, the laser beam 11 is absorbed by a dummy pattern including a plurality of layers, and heat is generated as the laser beam 11 is absorbed by the dummy pattern. Dissolution of the insulating film occurs. Note that copper, aluminum, tungsten, or the like is used as the conductive material.

  The dissolution of the interlayer insulating film is the same as in the second embodiment, and the dissolution occurs at the position on the upper layer side of the first interlayer insulating film 6 and the second interlayer insulating film 7, and the dissolved portion is removed by sublimation. In order to enlarge sequentially, uniform dissolution by the laser light 11, that is, removal of the first interlayer insulating film 6 and the second interlayer insulating film 7 can be performed in a wide range of the scribe region 4. Generation of peeling of the insulating film can be prevented.

  When the dummy pattern is formed from the dummy via 16, the height of the via is smaller than the thickness of the wiring as compared with the case where the dummy pattern is formed from the wiring pattern. Can be improved. Since the dummy pattern formed of the dummy vias 16 can improve the uniformity of heat conduction when irradiated with laser light, the laser grooving process can be performed efficiently.

  Thereafter, as in the first embodiment, when blade dicing is performed on the blade dicing area 5, the first interlayer insulating film 6 that is likely to generate chipping in the blade dicing area 5 in the scribe area 4 is used. Since the second interlayer insulating film 7 is removed, only the single-material semiconductor substrate 1 needs to be cut, so that the possibility of chipping defects can be greatly reduced. Accordingly, it is possible to prevent chipping defects that occur in the singulation process of cutting out the circuit region 2 from the semiconductor substrate 1.

  The dummy via 16 constituting the dummy pattern formed in the scribe region 4 can be formed using the same material simultaneously with the step of forming the via pattern in the circuit region 2 using a damascene process or the like.

  In the third embodiment, the dummy via 16 is formed only in the first interlayer insulating film 6, but the dummy via 16 may be formed in the second interlayer insulating film 7.

  Although illustration is omitted as in the first modification of the second embodiment, a diffusion layer conductive film may be formed between the semiconductor substrate and the interlayer insulating film. Since the interlayer insulating film is dissolved and removed before the diffusion layer conductive film is irradiated with laser light during laser grooving, the interlayer insulating film is not affected by the dissolution of the diffusion layer conductive film.

(Fourth embodiment)
A fourth embodiment of the present invention will be described with reference to the drawings. In the following examples, the same components as those of the first embodiment are denoted by the same reference numerals, and description thereof is omitted. In the fourth embodiment, a dummy pattern including dummy wirings and dummy vias is formed in the scribe region 4.

  FIG. 20 shows a semiconductor device according to the fourth embodiment, and shows a cross-sectional configuration of a scribe region 4 provided between circuit regions 2 adjacent to each other.

  As shown in FIG. 20, in the semiconductor device according to the fourth embodiment, dummy patterns including dummy wirings 17 and dummy vias 16 are formed in the plurality of interlayer insulating films 6 and the plurality of interlayer insulating films 7. 17 are connected by a dummy via 16. Further, in a plan view, the dummy wiring 17 and the dummy via 16 are formed so that there is no portion where the dummy pattern is not formed in the scribe region 4, particularly the blade dicing region 5.

  As described above, when the dummy wiring 17 and the dummy via 16 are formed so as to cover the scribe region 4 in a plan view, the scribe region 4 is covered with the conductive material constituting the dummy wiring 17 and the dummy via 16. The laser beam 11 is shielded by the conductive material. Therefore, when the laser grooving process is performed, the laser light 11 is absorbed by the dummy wiring 17 and the dummy via 16, and heat is generated as the laser light 11 is absorbed by the dummy wiring 17 and the dummy via 16. Therefore, the interlayer insulating film can be easily dissolved. Note that copper, aluminum, tungsten, or the like is used as the conductive material.

  The dissolution of the interlayer insulating film is the same as in the second embodiment, and the dissolution occurs at the position on the upper layer side of the first interlayer insulating film 6 and the second interlayer insulating film 7, and the dissolved portion is removed by sublimation. Since the enlarging is performed sequentially, uniform dissolution by the laser beam 11, that is, removal of the first interlayer insulating film 6 and the second interlayer insulating film 7 can be performed in a wide range of the scribe region 4. Generation of peeling of the interlayer insulating film can be prevented.

  Further, since the dummy wiring 17 and the dummy via 16 are connected, the thermal conductivity is good. For this reason, the solubility of the interlayer insulation film by the laser beam 11 is improved, and the melted portion can be homogenized.

  Thereafter, as in the first embodiment, when blade dicing is performed on the blade dicing area 5, the first interlayer insulating film 6 that is likely to generate chipping in the blade dicing area 5 in the scribe area 4 is used. Since the second interlayer insulating film 7 is removed, only the single-material semiconductor substrate 1 needs to be cut, so that the possibility of chipping defects can be greatly reduced. Accordingly, it is possible to prevent chipping defects that occur in the singulation process of cutting out the circuit region 2 from the semiconductor substrate 1.

  The dummy wiring 17 and the dummy via 16 formed in the scribe region 4 can be formed using the same material simultaneously with the step of forming the wiring pattern and the via pattern in the circuit region 2 using a damascene process or the like.

  Although illustration is omitted as in the first modification of the second embodiment, a diffusion layer conductive film may be formed between the semiconductor substrate and the interlayer insulating film. Since the interlayer insulating film is dissolved and removed before the diffusion layer conductive film is irradiated with laser light during laser grooving, the interlayer insulating film is not affected by the dissolution of the diffusion layer conductive film.

(First Modification of Fourth Embodiment)
A first modification of the fourth embodiment of the present invention will be described with reference to the drawings. The first modification of the fourth embodiment is characterized in that a dummy pattern including a dummy wiring 17 and a dummy via 16 is formed in the blade dicing area 5 in the scribe area 4.

  FIG. 21 shows a semiconductor device according to a first modification of the fourth embodiment, and shows a cross-sectional configuration of a scribe region 4 provided between circuit regions 2 adjacent to each other.

  As shown in FIG. 21, in the semiconductor device according to the first modification of the fourth embodiment, dummy wirings are formed in the entire scribe region 4, and the dummy wirings 17 are connected to the dummy vias 16 in the blade dicing region 5 in the scribe region 4. It is the structure formed so that it may connect by.

  With such a configuration, the scribe region 4, particularly the blade dicing region 5, which is melted by the laser light 11, has the dummy wirings 17 and the dummy vias 16 made of a conductive material, and therefore has good thermal conductivity. . Therefore, the solubility of the interlayer insulating film by the laser beam 11 is improved, so that the melted portion can be homogenized. In addition, since the uniform interlayer insulating film can be removed by the laser beam 11, it is possible to prevent the interlayer insulating film from peeling off. Moreover, the influence at the time of blade dicing by forming a dummy pattern in a scribe area | region can be suppressed.

  Thereafter, as in the first embodiment, when blade dicing is performed on the blade dicing area 5, the first interlayer insulating film 6 that is likely to generate chipping in the blade dicing area 5 in the scribe area 4 is used. Since the second interlayer insulating film 7 is removed, only the single-material semiconductor substrate 1 needs to be cut, so that the possibility of chipping defects can be greatly reduced. Accordingly, it is possible to prevent chipping defects that occur in the singulation process of cutting out the circuit region 2 from the semiconductor substrate 1.

  Although the first modified example of the fourth embodiment is not shown in the figure as in the first modified example of the second embodiment, a diffusion layer conductive film is formed between the semiconductor substrate and the interlayer insulating film. It may be. Since the interlayer insulating film is dissolved and removed before the diffusion layer conductive film is irradiated with laser light during laser grooving, the interlayer insulating film is not affected by the dissolution of the diffusion layer conductive film.

  Further, in the first modification of the fourth embodiment, the dummy wirings 17 are formed in the entire scribe region 4 and the dummy wirings 17 are connected to each other by the dummy vias 16 in the blade dicing region 5. Instead, the dummy via 16 may be formed in the entire scribe region 4, the dummy wiring 17 may be formed in the blade dicing region 5, and the dummy via 16 may be connected. That is, the dummy wiring 17 and the dummy via 16 are formed in the blade dicing area 5 so that there is no area where the dummy wiring 17 or the dummy via 16 is not formed in a plan view, and the dummy wiring 17 and the dummy via 16 are connected. If it is, the same effect can be acquired.

(Second modification of the fourth embodiment)
A second modification of the fourth embodiment of the present invention will be described with reference to the drawings. The second modification of the fourth embodiment is characterized in that a dummy pattern including dummy wirings 17 and dummy vias 16 is formed in an upper layer of an interlayer insulating film in the scribe region 4, particularly in the blade dicing region 5.

  FIG. 22 shows a semiconductor device according to a second modification of the fourth embodiment, and shows a cross-sectional configuration of a scribe region 4 provided between circuit regions 2 adjacent to each other.

  As shown in FIG. 22, in the semiconductor device according to the second modification of the fourth embodiment, dummy wiring is formed in the entire scribe region 4, and the upper layer of the interlayer insulating film in the blade dicing region 5 in the scribe region 4. In this configuration, the dummy wirings 17 are connected to each other by a dummy via 16.

  With such a configuration, dummy wirings 17 and dummy vias 16 made of a conductive material are formed in the upper layer of the interlayer insulating film in the scribe region 4, particularly the blade dicing region 5, which is melted by the laser beam 11. Therefore, heat conductivity is good. Although the illustration is simplified, since the interlayer insulating film is generally thicker in the upper layer, if the dummy wiring 17 and the dummy via 16 are formed in the upper layer in the blade dicing region 5, the interlayer insulating film by the laser beam 11 is formed. Since dissolution gradually expands from the upper layer to the lower layer, the interlayer insulating film can be uniformly dissolved in a wide range of the scribe region 4. Therefore, the solubility of the interlayer insulating film by the laser beam 11 is improved, so that the melted portion can be homogenized. In addition, since the uniform interlayer insulating film can be removed with the laser beam 11, it is possible to prevent the interlayer insulating film from peeling off.

  Thereafter, as in the first embodiment, when blade dicing is performed on the blade dicing area 5, the first interlayer insulating film 6 that is likely to generate chipping in the blade dicing area 5 in the scribe area 4 is used. Since the second interlayer insulating film 7 is removed, only the single-material semiconductor substrate 1 needs to be cut, so that the possibility of chipping defects can be greatly reduced. Accordingly, it is possible to prevent chipping defects that occur in the singulation process of cutting out the circuit region 2 from the semiconductor substrate 1.

  Although the second modified example of the fourth embodiment is not shown in the figure as in the first modified example of the second embodiment, a diffusion layer conductive film is formed between the semiconductor substrate and the interlayer insulating film. It may be. Since the interlayer insulating film is dissolved and removed before the diffusion layer conductive film is irradiated with laser light during laser grooving, the interlayer insulating film is not affected by the dissolution of the diffusion layer conductive film.

  In the second modification of the fourth embodiment, dummy wirings 17 are formed over the entire scribe region 4, and the dummy wirings 17 are connected to each other by dummy vias 16 in the upper layer of the interlayer insulating film in the blade dicing region 5. However, instead of this, a dummy via 16 may be formed in the entire scribe region 4 and a dummy wiring 17 may be formed in an upper layer in the blade dicing region 5 to be connected by the dummy via 16. That is, the dummy wiring 17 and the dummy via 16 are formed in the upper layer of the blade dicing area 5 so that there is no area where the dummy wiring 17 or the dummy via 16 is not formed in a plan view, and the dummy wiring 17 and the dummy via 16 are connected. If so, the same effect can be obtained.

  The semiconductor device according to the present invention can remove a uniform interlayer film by laser grooving, prevent the interlayer film from peeling off, and prevent the interlayer film from peeling off at the time of dicing, and has a multi-layer wiring structure. It is useful for semiconductor devices having

1 is a plan view of a wafer level semiconductor device according to a first embodiment of the present invention. It is a top view which shows the scribe area | region of the semiconductor device which concerns on 1st Embodiment of this invention. It is sectional drawing in the III-III line of FIG. It is sectional drawing which performed the laser grooving process to the scribe area | region in the semiconductor device which concerns on 1st Embodiment of this invention. It is sectional drawing which shows the scribe area | region of the semiconductor device which concerns on the 1st Embodiment of this invention. It is a top view which shows the scribe area | region in the semiconductor device which concerns on the 2nd Embodiment of this invention, (a) shows the 1st interlayer insulation film in which the 1st dummy pattern was formed, (b) is 2nd It is a top view which shows the 1st interlayer insulation film in which this dummy pattern was formed. It is sectional drawing in the VI-VI line of FIG. It is sectional drawing which implemented the laser proofing process to the scribe area | region in the semiconductor device which concerns on the 2nd Embodiment of this invention. It is sectional drawing which shows the scribe area | region in the semiconductor device which concerns on the 1st modification of the 2nd Embodiment of this invention. It is sectional drawing which shows the scribe area | region in the semiconductor device which concerns on the 2nd modification of the 2nd Embodiment of this invention. It is sectional drawing which shows the scribe area | region in the semiconductor device which concerns on the 3rd modification of the 2nd Embodiment of this invention. It is sectional drawing which shows the scribe area | region in the semiconductor device which concerns on the 4th modification of the 2nd Embodiment of this invention. It is sectional drawing which shows the scribe area | region in the semiconductor device which concerns on the 5th modification of the 2nd Embodiment of this invention. It is sectional drawing which shows the scribe area | region in the semiconductor device which concerns on the 6th modification of the 2nd Embodiment of this invention. It is sectional drawing which shows the scribe area | region in the semiconductor device which concerns on the 7th modification of the 2nd Embodiment of this invention. It is sectional drawing which shows the scribe area | region in the semiconductor device which concerns on the 7th modification of the 2nd Embodiment of this invention. It is sectional drawing which shows the scribe area | region in the semiconductor device which concerns on the 8th modification of the 2nd Embodiment of this invention. It is sectional drawing which shows the scribe area | region in the semiconductor device which concerns on the 8th modification of the 2nd Embodiment of this invention. It is sectional drawing which shows the scribe area | region in the semiconductor device which concerns on the 3rd Embodiment of this invention. It is sectional drawing which shows the scribe area | region in the semiconductor device which concerns on the 4th Embodiment of this invention. It is sectional drawing which shows the scribe area | region in the semiconductor device which concerns on the 1st modification of the 4th Embodiment of this invention. It is sectional drawing which shows the scribe area | region in the semiconductor device which concerns on the 2nd modification of the 4th Embodiment of this invention. (A) is a top view which shows the scribe area | region in the semiconductor device which concerns on a prior art example, (b) is sectional drawing in the XVIb-XVIb line | wire of (a).

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor substrate 2 Circuit area 3 Seal ring 4 Scribe area 5 Blade dicing area 6 1st interlayer insulation film 7 2nd interlayer insulation film 8a 1st protective film 8b 2nd protective film 9 Embedded film 10 Resin protective film 11 Laser beam 12 First dummy pattern 13 Second dummy pattern 14 Diffusion layer conductive film 15 Third dummy pattern 16 Dummy via 17 Dummy wiring

Claims (17)

A semiconductor substrate;
A diffusion layer conductive film provided on the semiconductor substrate;
An interlayer insulating film stacked on the semiconductor substrate;
A semiconductor device comprising a wiring pattern and a via pattern provided in the interlayer insulating film,
A plurality of circuit regions formed in the semiconductor substrate;
A scribe region formed around the circuit region and separating each circuit region;
The semiconductor device according to claim 1, wherein the diffusion layer conductive film is not formed in at least a region of the scribe region irradiated with laser light.   The semiconductor device according to claim 1, wherein the diffusion layer conductive film is not formed over the entire scribe region.   The semiconductor device according to claim 1, wherein the wiring pattern and the via pattern are not formed in the scribe region.   In the scribe region, the wiring pattern or the via pattern is formed in a region excluding the region near the center line of the scribe region, and the wiring pattern or the via pattern formed in the scribe region is in the vicinity of the center line. 3. The semiconductor device according to claim 1, wherein a distance straddling the region is larger toward an upper layer side of the interlayer insulating film. A semiconductor substrate;
A diffusion layer conductive film provided on the semiconductor substrate;
A plurality of interlayer insulating films stacked on the semiconductor substrate;
A semiconductor device comprising a wiring pattern and a via pattern provided in the interlayer insulating film,
A plurality of circuit regions formed in the semiconductor substrate;
A scribe region formed around the circuit region and separating each circuit region;
In the plan view, the scribe region includes at least one of the scribe regions that is irradiated with the laser beam by any one of the wiring pattern and the via pattern formed on the plurality of interlayer insulating films. A semiconductor device which is covered.   6. The scribe region according to claim 5, wherein the scribe region is entirely covered with the wiring patterns or the via patterns formed in the plurality of interlayer insulating films in a plan view. The semiconductor device described.   The semiconductor device according to claim 5, wherein the diffusion layer conductive film is formed in the scribe region.   6. The wiring patterns arranged in the plurality of interlayer insulating films formed in the scribe region have at least ends of the wiring patterns overlapping each other in plan view. 8. The semiconductor device according to any one of 1 to 7.   6. The wiring patterns arranged in the plurality of interlayer insulating films formed in the scribe region are arranged such that ends of the wiring patterns coincide with each other in plan view. 8. The semiconductor device according to claim 7.   10. The wiring pattern formed in the scribe region is formed in two or more interlayer insulating films from the upper layer among the plurality of interlayer insulating films. The semiconductor device described.   The wiring pattern formed in the scribe region is formed in two or more interlayer insulating films from a lower layer among the plurality of interlayer insulating films. The semiconductor device described. A semiconductor substrate;
A diffusion layer conductive film provided on the semiconductor substrate;
A semiconductor device comprising an interlayer insulating film laminated on the semiconductor substrate and having a wiring pattern,
A plurality of circuit regions formed in the semiconductor substrate;
A scribe region formed around the circuit region and separating each circuit region;
The semiconductor device according to claim 1, wherein the scribe region has the flat wiring pattern formed at least in a region irradiated with laser light. A semiconductor substrate;
A diffusion layer conductive film provided on the semiconductor substrate;
An interlayer insulating film stacked on the semiconductor substrate;
A semiconductor device comprising a wiring pattern and a via pattern provided in the interlayer insulating film,
A plurality of circuit regions formed in the semiconductor substrate;
A scribe region formed around the circuit region and separating each circuit region;
The scribe region is, when viewed in plan, at least a region of the scribe region irradiated with laser light is covered with the wiring patterns and via patterns formed on the plurality of interlayer insulating films. A semiconductor device characterized by the above.   The semiconductor device according to claim 13, wherein the wiring pattern and the via pattern are formed in the plurality of interlayer insulating films and cover the entire scribe region in plan view. The wiring pattern is formed over the entire scribe region,
The semiconductor device according to claim 13, wherein the via pattern is formed only in an upper layer in a region near a center line of the scribe region.   The semiconductor device according to claim 13, wherein the diffusion layer conductive film is formed in the scribe region.   The semiconductor device according to claim 13, wherein the wiring pattern and the via pattern are connected to each other.

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