JP2009133824A - ナノワイヤ・マルチスペクトル画像化アレイ - Google Patents
ナノワイヤ・マルチスペクトル画像化アレイ Download PDFInfo
- Publication number
- JP2009133824A JP2009133824A JP2008233443A JP2008233443A JP2009133824A JP 2009133824 A JP2009133824 A JP 2009133824A JP 2008233443 A JP2008233443 A JP 2008233443A JP 2008233443 A JP2008233443 A JP 2008233443A JP 2009133824 A JP2009133824 A JP 2009133824A
- Authority
- JP
- Japan
- Prior art keywords
- nanowire
- antennas
- substrate
- multispectral imaging
- nanowires
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002070 nanowire Substances 0.000 title claims abstract description 62
- 238000000701 chemical imaging Methods 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 10
- 238000001816 cooling Methods 0.000 abstract description 7
- 230000003595 spectral effect Effects 0.000 abstract description 6
- 230000007423 decrease Effects 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000005855 radiation Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 238000003384 imaging method Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000003491 array Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000004297 night vision Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000000779 smoke Substances 0.000 description 2
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000004438 eyesight Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/30—Measuring the intensity of spectral lines directly on the spectrum itself
- G01J3/36—Investigating two or more bands of a spectrum by separate detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
- G01J5/024—Special manufacturing steps or sacrificial layers or layer structures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0837—Microantennas, e.g. bow-tie
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0853—Optical arrangements having infrared absorbers other than the usual absorber layers deposited on infrared detectors like bolometers, wherein the heat propagation between the absorber and the detecting element occurs within a solid
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0881—Compact construction
- G01J5/0884—Monolithic
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J5/22—Electrical features thereof
- G01J5/24—Use of specially adapted circuits, e.g. bridge circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14669—Infrared imagers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J2005/0077—Imaging
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electromagnetism (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
- Spectrometry And Color Measurement (AREA)
- Variable-Direction Aerials And Aerial Arrays (AREA)
Abstract
【解決手段】マルチスペクトル画像化アレイシステム及びこれを形成する方法である。基板及びアンテナグループは基板上に互いに関して配置することができ、これにより、各アンテナグループ間にそれぞれギャップが形成され、異なるアンテナサイズが異なるスペクトル範囲について使用できる。さらに、1つ又は複数のナノワイヤがそれぞれのギャップ中の1つ又は複数のギャップ内に配置でき、これにより、アンテナ及び基板と通信するナノワイヤはマルチスペクトル画像化システムを構成する。当該システムにおいて、ナノワイヤの使用により、熱時定数、したがってアンテナからの読み出しレートを低減する一方、読み出しレートに対して周囲の気体冷却速度を減少させて、マルチスペクトル画像化アレイシステムの製造可能性を増加させる。
【選択図】図2
Description
本出願は、2007年9月13日提出の「Nanowire Multispectral Imaging Array」と題する米国仮特許出願第60/972,120号の利益を主張する。
本発明の別の態様は、赤外線及び/又はテラヘルツ検出用途で利用されるナノワイヤのマルチスペクトル・アレイを提供するものである。
マルチスペクトル画像化アレイシステムは、基板と、複数のそれぞれのギャップが複数のアンテナ中の各アンテナ間に形成されるように当該基板上に互いに関して配置された複数のアンテナとを具備し、複数のアンテナ中のアンテナの各グループはそれぞれ異なるアンテナサイズを含む。さらに、1つ又は複数のナノワイヤは、それぞれのギャップ中の1つ又は複数のギャップに配置されて、その結果、アンテナと通信するナノワイヤと基板とがマルチスペクトル画像化システムを構成し、ナノワイヤの使用により熱時定数したがってアンテナからの読み出しレートが低減する一方、読み出しレートに関連して周囲の気体冷却速度を低減し、マルチスペクトル画像化アレイシステムの製造可能性を増加させる。
Claims (3)
- 基板と、
各アンテナ間に複数のそれぞれのギャップが形成されるように、前記基板上に互いに関して配置された複数のアンテナと、
前記複数のそれぞれのギャップ中の少なくとも1つのギャップに配置された少なくとも1つのナノワイヤとを具備し、前記複数のアンテナと通信する前記少なくとも1つのナノワイヤ及び前記基板がマルチスペクトル画像化システムを構成する、マルチスペクトル画像化アレイシステム。 - 基板と、
各アンテナ間に複数のそれぞれのギャップが形成されるように、前記基板上に互いに関して配置された複数のアンテナと、
前記複数のそれぞれのギャップ中の少なくとも1つのギャップに配置された少なくとも1つのナノワイヤであって、前記複数のアンテナと通信する前記少なくとも1つのナノワイヤ及び前記基板がマルチスペクトル画像化システムを構成する、少なくとも1つのナノワイヤと、
前記複数のアンテナ、前記少なくとも1つのナノワイヤ及び前記基板からなる画素アレイであって、前記複数のアンテナ中のアンテナのグループが前記が素アレイの画素を構成する、画素アレイとを具備するマルチスペクトル画像化アレイシステム。 - マルチスペクトル画像化アレイを形成する方法であって、
基板を用意するステップと、
前記基板上に互いに関して配置され、複数のアンテナグループを含む、複数のアンテナを構成するステップと、
前記複数のアンテナ中の各アンテナグループ間に複数のそれぞれのギャップを形成するステップと、
前記複数のそれぞれのギャップ中の少なくとも1つのギャップに少なくとも1つのナノワイヤを配置するステップであって、前記複数のアンテナと通信する前記少なくとも1つのナノワイヤと前記基板とがマルチスペクトル画像化アレイを構成する、少なくとも1つのナノワイヤを配置するステップとを含む方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US97212007P | 2007-09-13 | 2007-09-13 | |
US60/972,120 | 2007-09-13 | ||
US11/977,767 | 2007-10-26 | ||
US11/977,767 US7786440B2 (en) | 2007-09-13 | 2007-10-26 | Nanowire multispectral imaging array |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009133824A true JP2009133824A (ja) | 2009-06-18 |
JP2009133824A5 JP2009133824A5 (ja) | 2011-05-19 |
JP5265279B2 JP5265279B2 (ja) | 2013-08-14 |
Family
ID=40128121
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008233443A Expired - Fee Related JP5265279B2 (ja) | 2007-09-13 | 2008-09-11 | ナノワイヤ・マルチスペクトル画像化アレイ |
Country Status (3)
Country | Link |
---|---|
US (1) | US7786440B2 (ja) |
EP (1) | EP2037243A3 (ja) |
JP (1) | JP5265279B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012109652A (ja) * | 2010-11-15 | 2012-06-07 | Nippon Signal Co Ltd:The | テラヘルツ検出器 |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9000353B2 (en) | 2010-06-22 | 2015-04-07 | President And Fellows Of Harvard College | Light absorption and filtering properties of vertically oriented semiconductor nano wires |
US8735797B2 (en) | 2009-12-08 | 2014-05-27 | Zena Technologies, Inc. | Nanowire photo-detector grown on a back-side illuminated image sensor |
US8274039B2 (en) | 2008-11-13 | 2012-09-25 | Zena Technologies, Inc. | Vertical waveguides with various functionality on integrated circuits |
US9343490B2 (en) | 2013-08-09 | 2016-05-17 | Zena Technologies, Inc. | Nanowire structured color filter arrays and fabrication method of the same |
US8835831B2 (en) | 2010-06-22 | 2014-09-16 | Zena Technologies, Inc. | Polarized light detecting device and fabrication methods of the same |
US8299472B2 (en) | 2009-12-08 | 2012-10-30 | Young-June Yu | Active pixel sensor with nanowire structured photodetectors |
US8229255B2 (en) | 2008-09-04 | 2012-07-24 | Zena Technologies, Inc. | Optical waveguides in image sensors |
US9515218B2 (en) * | 2008-09-04 | 2016-12-06 | Zena Technologies, Inc. | Vertical pillar structured photovoltaic devices with mirrors and optical claddings |
US9478685B2 (en) | 2014-06-23 | 2016-10-25 | Zena Technologies, Inc. | Vertical pillar structured infrared detector and fabrication method for the same |
US8866065B2 (en) | 2010-12-13 | 2014-10-21 | Zena Technologies, Inc. | Nanowire arrays comprising fluorescent nanowires |
US8519379B2 (en) | 2009-12-08 | 2013-08-27 | Zena Technologies, Inc. | Nanowire structured photodiode with a surrounding epitaxially grown P or N layer |
US9082673B2 (en) | 2009-10-05 | 2015-07-14 | Zena Technologies, Inc. | Passivated upstanding nanostructures and methods of making the same |
US9406709B2 (en) | 2010-06-22 | 2016-08-02 | President And Fellows Of Harvard College | Methods for fabricating and using nanowires |
US9299866B2 (en) | 2010-12-30 | 2016-03-29 | Zena Technologies, Inc. | Nanowire array based solar energy harvesting device |
US8546742B2 (en) | 2009-06-04 | 2013-10-01 | Zena Technologies, Inc. | Array of nanowires in a single cavity with anti-reflective coating on substrate |
US8791470B2 (en) | 2009-10-05 | 2014-07-29 | Zena Technologies, Inc. | Nano structured LEDs |
US20100148221A1 (en) * | 2008-11-13 | 2010-06-17 | Zena Technologies, Inc. | Vertical photogate (vpg) pixel structure with nanowires |
US8269985B2 (en) | 2009-05-26 | 2012-09-18 | Zena Technologies, Inc. | Determination of optimal diameters for nanowires |
US8889455B2 (en) | 2009-12-08 | 2014-11-18 | Zena Technologies, Inc. | Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor |
US8748799B2 (en) | 2010-12-14 | 2014-06-10 | Zena Technologies, Inc. | Full color single pixel including doublet or quadruplet si nanowires for image sensors |
US8890271B2 (en) | 2010-06-30 | 2014-11-18 | Zena Technologies, Inc. | Silicon nitride light pipes for image sensors |
US8495048B2 (en) * | 2009-08-26 | 2013-07-23 | International Business Machines | Applying user-generated deployment events to a grouping of deployable portlets |
US9800805B2 (en) * | 2011-02-02 | 2017-10-24 | The Boeing Company | Frequency selective imaging system |
US8729456B2 (en) * | 2011-02-02 | 2014-05-20 | The Boeing Company | Frequency selective electromagnetic detector |
US8664583B2 (en) * | 2011-07-01 | 2014-03-04 | The Boeing Company | Nonlinear optical surface sensing with a single thermo-electric detector |
US11674850B1 (en) * | 2020-04-22 | 2023-06-13 | National Technology & Engineering Solutions Of Sandia, Llc | Continuous full-resolution two-color infrared detector |
CN113991284B (zh) * | 2021-11-03 | 2022-12-30 | 中国科学技术大学 | 对微波场局域的器件及其制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05264343A (ja) * | 1992-03-19 | 1993-10-12 | Advance Co Ltd | 遠赤外線分光検出素子 |
JPH11225016A (ja) * | 1997-09-16 | 1999-08-17 | Metorex Internatl Oy | サブミリ波で機能する撮像システム |
WO2005085809A1 (en) * | 2004-03-08 | 2005-09-15 | Korea Institute Of Science And Technology | Nanowire light sensor and kit with the same |
US7095027B1 (en) * | 2004-02-25 | 2006-08-22 | University Of Central Florida Research Foundation, Inc. | Multispectral multipolarization antenna-coupled infrared focal plane array |
JP2007515630A (ja) * | 2003-12-04 | 2007-06-14 | レイセオン カンパニー | 異なる波長のための検出器を用いて一波長において放射線を検出するための方法及び装置 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4638345A (en) | 1983-06-01 | 1987-01-20 | Rca Corporation | IR imaging array and method of making same |
US4584475A (en) | 1984-05-29 | 1986-04-22 | Allied Corporation | Surface acoustic wave infrared line imaging array |
US5300915A (en) | 1986-07-16 | 1994-04-05 | Honeywell Inc. | Thermal sensor |
US5021663B1 (en) | 1988-08-12 | 1997-07-01 | Texas Instruments Inc | Infrared detector |
US5286976A (en) | 1988-11-07 | 1994-02-15 | Honeywell Inc. | Microstructure design for high IR sensitivity |
US5237334A (en) | 1989-06-29 | 1993-08-17 | Waters William M | Focal plane antenna array for millimeter waves |
CA2117476C (en) | 1992-06-19 | 2000-02-22 | R. Andrew Wood | Infrared camera with thermoelectric temperature stabilization |
JPH0661465A (ja) | 1992-08-11 | 1994-03-04 | Mitsubishi Electric Corp | 赤外線撮像素子 |
US5729019A (en) * | 1995-12-29 | 1998-03-17 | Honeywell Inc. | Split field-of-view uncooled infrared sensor |
US5990469A (en) | 1997-04-02 | 1999-11-23 | Gentex Corporation | Control circuit for image array sensors |
US6310346B1 (en) * | 1997-05-30 | 2001-10-30 | University Of Central Florida | Wavelength-tunable coupled antenna uncooled infrared (IR) sensor |
US6953932B2 (en) | 1999-10-07 | 2005-10-11 | Infrared Solutions, Inc. | Microbolometer focal plane array with temperature compensated bias |
FR2826725B1 (fr) | 2001-06-28 | 2004-02-27 | Commissariat Energie Atomique | Microbolometres resistants aux temperatures de scenes elevees. |
WO2004018982A2 (en) | 2002-08-20 | 2004-03-04 | Lockheed Martin Corporation | Antenna-coupled microbolometer |
US20050060884A1 (en) * | 2003-09-19 | 2005-03-24 | Canon Kabushiki Kaisha | Fabrication of nanoscale thermoelectric devices |
FR2867273B1 (fr) | 2004-03-04 | 2006-09-08 | Commissariat Energie Atomique | Procede de realisation d'un dispositif pour la detection thermique d'un rayonnement comportant un microbolometre actif et un microbolometre passif |
US7126330B2 (en) | 2004-06-03 | 2006-10-24 | Honeywell International, Inc. | Integrated three-dimensional magnetic sensing device and method to fabricate an integrated three-dimensional magnetic sensing device |
US7280068B2 (en) | 2005-07-14 | 2007-10-09 | Agilent Technologies, Inc. | System and method for microwave imaging with suppressed sidelobes using a sparse antenna array |
US7385199B2 (en) | 2005-09-26 | 2008-06-10 | Teledyne Licensing, Llc | Microbolometer IR focal plane array (FPA) with in-situ mirco vacuum sensor and method of fabrication |
US7510668B2 (en) | 2005-11-10 | 2009-03-31 | General Electric Company | Low cost antenna array fabrication technology |
US7937054B2 (en) | 2005-12-16 | 2011-05-03 | Honeywell International Inc. | MEMS based multiband receiver architecture |
-
2007
- 2007-10-26 US US11/977,767 patent/US7786440B2/en active Active
-
2008
- 2008-09-09 EP EP08164002A patent/EP2037243A3/en not_active Withdrawn
- 2008-09-11 JP JP2008233443A patent/JP5265279B2/ja not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05264343A (ja) * | 1992-03-19 | 1993-10-12 | Advance Co Ltd | 遠赤外線分光検出素子 |
JPH11225016A (ja) * | 1997-09-16 | 1999-08-17 | Metorex Internatl Oy | サブミリ波で機能する撮像システム |
JP2007515630A (ja) * | 2003-12-04 | 2007-06-14 | レイセオン カンパニー | 異なる波長のための検出器を用いて一波長において放射線を検出するための方法及び装置 |
US7095027B1 (en) * | 2004-02-25 | 2006-08-22 | University Of Central Florida Research Foundation, Inc. | Multispectral multipolarization antenna-coupled infrared focal plane array |
WO2005085809A1 (en) * | 2004-03-08 | 2005-09-15 | Korea Institute Of Science And Technology | Nanowire light sensor and kit with the same |
Non-Patent Citations (1)
Title |
---|
PROCEEDINGS OF SPIE, vol. 4855, JPN6012034951, 2003, pages 201 - 207, ISSN: 0002269562 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012109652A (ja) * | 2010-11-15 | 2012-06-07 | Nippon Signal Co Ltd:The | テラヘルツ検出器 |
Also Published As
Publication number | Publication date |
---|---|
EP2037243A3 (en) | 2011-03-16 |
EP2037243A2 (en) | 2009-03-18 |
US7786440B2 (en) | 2010-08-31 |
JP5265279B2 (ja) | 2013-08-14 |
US20090072145A1 (en) | 2009-03-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5265279B2 (ja) | ナノワイヤ・マルチスペクトル画像化アレイ | |
US7385199B2 (en) | Microbolometer IR focal plane array (FPA) with in-situ mirco vacuum sensor and method of fabrication | |
US7847253B2 (en) | Wideband semiconducting light detector | |
US7491938B2 (en) | Multi-spectral uncooled microbolometer detectors | |
JP6745121B2 (ja) | メタマテリアル構造を含む赤外線吸収薄膜を有する温度センサ | |
US7288765B2 (en) | Device for detecting infrared radiation with bolometric detectors | |
KR100876459B1 (ko) | 경량 적외선 카메라 | |
US7791026B2 (en) | Microbolometer infrared security sensor | |
US6621083B2 (en) | High-absorption wide-band pixel for bolometer arrays | |
US7750301B1 (en) | Microbolometer optical cavity tuning and calibration systems and methods | |
US10677656B2 (en) | Devices and methods for infrared reference pixels | |
JP2011145296A (ja) | モノリシックシリコン微細加工式サーモパイル赤外線センサー | |
US7095027B1 (en) | Multispectral multipolarization antenna-coupled infrared focal plane array | |
Kimata | Trends in small-format infrared array sensors | |
US20120085990A1 (en) | Superlattice quantum well infrared detector having exposed layers | |
US9606016B2 (en) | Devices and methods for determining vacuum pressure levels | |
Hanson et al. | Small pixel a-Si/a-SiGe bolometer focal plane array technology at L-3 Communications | |
Tankut et al. | An 80x80 microbolometer type thermal imaging sensor using the LWIR-band CMOS infrared (CIR) technology | |
Tankut et al. | A 160x120 LWIR-band CMOS Infrared (CIR) microbolometer | |
KR102411749B1 (ko) | 적외선 기준 화소를 위한 장치 및 방법 | |
WO2006038213A2 (en) | Millimeter wave pixel and focal plane array imaging sensors thereof | |
US7485860B2 (en) | Thermoelectric bridge IR detector | |
Perenzoni et al. | A monolithic visible, infrared and terahertz 2D detector | |
Liddiard | MOEMS development of infrared security sensors | |
Pope et al. | Microbolometer detector array for satellite-based thermal infrared imaging |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110330 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110330 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120517 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120704 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120907 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130402 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130501 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 5265279 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |