JP2009123724A - Manufacturing method of semiconductor device - Google Patents

Abstract

In order to manufacture a highly reliable semiconductor device even when the thickness of a semiconductor chip is reduced, a metal gettering layer is formed by rubbing fine particles into a thinned semiconductor wafer grinding surface.
[1] A method of forming a metal gettering layer on a ground surface by rubbing fine particles having a copper concentration of 10 ¹⁴ atoms · cm ⁻³ or less into a thinned semiconductor wafer ground surface. [2] A method for producing a semiconductor chip, comprising: a step of dicing a semiconductor wafer having fine particles rubbed into the ground surface according to [1] above; and a step of dicing the semiconductor wafer after the fine particles have been rubbed.
[Selection] Figure 8

Description

  The present invention relates to a method for manufacturing a highly reliable thin semiconductor wafer or a highly reliable thin semiconductor chip.

  With recent downsizing and weight reduction of electronic devices, semiconductor devices are required to be smaller and thinner. With such a change in the shape of the semiconductor device, a semiconductor chip mounted on the semiconductor device is required to be thinner than a conventional chip.

  Usually, since a semiconductor chip is obtained from a semiconductor wafer, it is necessary to make the semiconductor wafer itself thinner in order to make the semiconductor chip thinner. However, when a semiconductor chip is manufactured using a thin semiconductor wafer from the beginning, there is a very high risk that the semiconductor wafer itself will be damaged. In order to reduce wafer breakage during the manufacture of such semiconductor chips, it is common to thin the semiconductor wafer after forming the basic structure of the semiconductor chip on the surface of the semiconductor wafer.

  Actually, since many basic structures of semiconductor chips are formed on the surface portion of the semiconductor wafer, the wafer back surface portion where the basic structure of the semiconductor chips is not formed is uniformly ground and thinned. .

  A general semiconductor wafer grinding process is divided into a roughing process and a finishing process. In the roughing process, the grinding is performed to a thickness obtained by adding 20 to 40 μm to the target cutting thickness using a grindstone having a particle size in the range of # 300 to 500. In the finish cutting process, a target grinding thickness is cut using a grindstone having a grain size in the range of # 2000 to 8000. However, when the thickness of the semiconductor wafer is ground to 100 μm or less by this method, the bending strength of the wafer is greatly reduced by the damaged layer (crystal strain layer) introduced into the ground surface.

  When a thin semiconductor chip is incorporated into a semiconductor device in a state where the bending strength is reduced by grinding, the semiconductor chip is damaged during the assembling process. For this reason, when the thickness of the semiconductor wafer is made thinner than 100 μm, the damaged layer of the grinding surface introduced by the grinding is generally removed by dry polishing, CMG (Chemical Mechanical Grinding), dry etching, wet etching, etc. In addition, the reduction in the bending strength of the semiconductor wafer is suppressed.

JP 2006-41258 A JP 2006-303223 A

  However, the thin semiconductor device on which the semiconductor chip from which the damage layer has been removed described above is mounted has a problem that it is likely to malfunction. The main cause of the malfunction is that specific impurities attached to the grinding surface or existing inside the grinding layer diffuse into the semiconductor chip operation area in the process of incorporating the semiconductor chip into the semiconductor device. To cause. Generally, as a method of adding a metal gettering ability to a semiconductor wafer, a method of forming a damaged layer, a strained layer, a crystal defect layer or the like on a ground surface, and a gettering film such as polysilicon is formed on the ground surface. A method or a method of implanting high concentration ions into the wafer by ion implantation or the like is used.

  However, when a damage layer, a strain layer, a crystal defect layer, or the like is formed on the ground surface of a thin semiconductor wafer, the wafer is likely to warp or crack as the wafer thickness decreases. Also, even if it is not broken in the wafer state, the chip breaks when dicing when processing into a chip, bonding when providing wiring on the chip, or sealing the chip with a resin or the like There was a problem.

  On the other hand, in the method of forming a gettering film such as polysilicon on the grinding surface or the method of implanting high concentration ions by ion implantation or the like, a special device is required, and the device purchase cost and its maintenance cost are reduced. Not only will it be necessary separately, but it will also be necessary to secure space for the device.

  Furthermore, when moving a semiconductor wafer thinned to 100 μm or less to another device, handling and transfer are very difficult because the wafer itself cannot support its own weight, and a dedicated handling device and transfer device. However, there is a problem that the risk of damage to the wafer during handling and transfer increases. Such a tendency becomes more prominent as the semiconductor wafer becomes thinner and larger in diameter.

  An object of the present invention is to provide a method of forming a metal gettering layer and a method of manufacturing a semiconductor chip using the same, which can provide a highly reliable semiconductor device even when the thickness of the semiconductor wafer is reduced to 100 μm or less. It is in.

  As a result of diligent studies to solve the above problems, it was found that if a metal gettering layer is formed by rubbing fine particles into the ground surface of a semiconductor wafer, it is difficult for semiconductor chips to malfunction and the present invention is completed. It came to do.

  Conventionally, as a method of forming a metal gettering layer on a thinned semiconductor wafer, a method of forming a damaged layer on a ground surface using mechanical polishing or a grinding tool (Patent Document 1), abrasive grains are mixed. A method of forming a strained layer on a ground surface by applying ultrasonic waves to a liquid (Patent Document 2) has been known. These intentionally damage the ground surface of the semiconductor wafer, and usually there is a trade-off between the damage level and the gettering ability. For this reason, when the above method is applied to a very thin wafer that cannot hold its own weight, it is necessary to consider the damage of the wafer and the chip due to the reduction in the wafer bending strength, and the damage level is limited. For this reason, there is a problem that the gettering ability cannot be increased as the wafer thickness becomes thinner, and the malfunction of the semiconductor chip tends to occur.

  In addition, when the damaged layer is formed by the above method, a separate device is required in addition to the semiconductor wafer grinding device, so that purchase cost and maintenance cost of the device, an extra installation area, and the like are required. Furthermore, in the case of a semiconductor wafer that has been thinned so that it cannot hold its own weight, handling and transfer are very difficult, and the possibility of damage to the wafer during handling and transfer is high.

  The present invention has been made in view of such problems, and does not require a separate device other than the semiconductor wafer grinding device, and even if the grinding surface of the semiconductor wafer is so thin that it cannot hold its own weight, the grinding surface An object of the present invention is to provide a fine particle rubbing method capable of forming a metal gettering layer having a level of several nanometers to several hundred nanometers without damaging the metal.

  That is, as a representative example of the present invention, the thickness of the semiconductor wafer is 100 μm or less using the first polishing pad having the first particle size and the second polishing pad having the second particle size larger than the first particle size. A semiconductor device manufacturing method comprising: a first step of polishing the back surface of the semiconductor wafer, and a second step of rubbing fine particles on the back surface of the semiconductor wafer after the first step.

  According to the present invention, a highly reliable semiconductor device can be provided even when the semiconductor chip is thinned.

  In the present invention, after a desired semiconductor element is formed on the surface of a semiconductor wafer, a roughing process and a finishing process are performed on the back surface, and after the thickness of the semiconductor wafer is cut to 100 μm, the back surface of the semiconductor wafer is formed. Fine particles are rubbed in.

First, fine particles that do not cause malfunction of the semiconductor chip of the present invention will be described. The fine particles used in the present invention are fine particles containing no copper or nickel. However, in addition to those that have been completely removed, if they cannot be completely removed, they can be used in the present invention if their concentration is 10 ¹⁴ atoms · cm ⁻³ or less. Examples of the particles include alumina, silicon oxide, silicon nitride, boron oxide, phosphorus oxide, silicon, silicon carbide, W, and Mo fine particles. The fine particles may be one kind or two or more kinds as long as at least one of the materials is included.

The alumina, silicon oxide, or silicon nitride may be a natural product or a synthetic product, and preferably contains B and P of 10 ¹⁴ atoms · cm ⁻³ or more. This is because B and P have a metal gettering action. The method for obtaining the synthetic product is not particularly limited, and the synthetic product obtained by a high temperature and high pressure or a method obtained by a known method such as a CVD method can be used.

  In addition, boron oxide, phosphorus oxide, silicon, silicon carbide, W, and Mo particles can be used by any method, but these can be obtained as commercial products.

  FIG. 1 shows the relationship between the relative bending strength and the particle size of the particles when no apparatus is rubbed when the apparatus according to the present invention is used. FIG. 1 shows that the relative bending strength decreases as the particle size increases. From the relationship between the relative bending strength and the particle size, it can be seen that the smaller the particle size used in the present invention is, the better. However, when the particle diameter is smaller than 0.01 μm, it is not only difficult to obtain fine particles but also often expensive. Further, when the relative bending strength against the absence of fine particle rubbing is lower than 70%, there is a high possibility that the semiconductor chip is damaged. Therefore, the particle diameter of the fine particles is preferably in the range of 0.01 to 50 μm from a practical viewpoint.

  The shape of the fine particles is not particularly limited. For example, it may have a regular shape such as a spherical shape or an irregular shape. Further, all the particle diameters are not necessarily primary particles, and may be secondary particles, that is, aggregates.

  By rubbing these fine particles into the grinding surface of the semiconductor wafer, it is possible to form a gettering layer on the grinding surface, and a semiconductor device equipped with a thin semiconductor chip obtained from this semiconductor wafer exhibits high reliability. .

  Next, the fine particle rubbing apparatus for grinding a semiconductor wafer according to the present invention will be described.

  A fine particle rubbing apparatus for grinding a semiconductor wafer according to the present invention will be described in detail with reference to FIG. 2 includes a semiconductor wafer 1 thinned to 100 μm or less by grinding, a pedestal 2 for fixing the semiconductor wafer 1, and a turntable 3 capable of rotating the thinned semiconductor wafer 1 and the pedestal 2 for fixing the semiconductor wafer 1. The spray nozzle 4 capable of spraying the fine particles and the compressed air individually or simultaneously, the swing arm 5 capable of moving the spray nozzle 4 on the rotating disk 3, and the rubbing for rubbing the fine particles into the grinding surface FIG. 2 illustrates a main cross-sectional view of a device for rubbing fine particles into a grinding surface of a semiconductor wafer provided with a pad 6 and a turntable 7 capable of fixing and rotating the rubbing pad 6. The rotating disk 7 can rotate, and can move horizontally and vertically on the grinding wafer while rotating.

  First, the apparatus for rubbing fine particles onto the ground surface of the semiconductor wafer of the present invention needs to be able to uniformly disperse (inject) the fine particles of the present invention onto the ground surface.

  Here, specific examples of the fine particles include alumina, silicon oxide, boron oxide, phosphorus oxide, silicon, silicon carbide, W, and Mo.

The copper or nickel concentration contained in the fine particle material needs to be 10 ¹⁴ atoms · cm ⁻³ or less, but the particle shape is not particularly limited and may be a regular shape such as a sphere. However, it may have an irregular shape. Furthermore, it is possible to mix and rub a plurality of kinds of the fine particles at the same time, or to rub them separately into a plurality of times. At this time, it is more effective to mix a chelating agent (metal removing agent) capable of capturing metal.

  In addition, the fine particle rubbing device for grinding a semiconductor wafer according to the present invention includes means for rotating or moving at least one of the rotating disk 3 and the swing arm 5 in the previous period. In the case where the swing arm 5 moves at the same time while the turntable 3 rotates, there is no limitation on the rotation direction of the turntable 3 and the movement direction of the swing arm 5.

  FIG. 3 is a schematic view exemplifying a fine particle rubbing process to a semiconductor wafer grinding surface using the fine particle rubbing device to the semiconductor wafer grinding surface capable of injecting sand particles of the present invention.

  A semiconductor manufacturing method including a step of forming the fine particle rubbing layer 8 on the ground surface of the thinned semiconductor wafer 1 by the fine particle rubbing apparatus on the semiconductor wafer ground surface will be described.

  The diameter of the turntable 3 of the impurity removal apparatus illustrated in FIG. 3 is usually in the range of 100 mm to 500 mm, and preferably in the range of 200 mm to 450 mm.

  The moving speed of the swing arm 5 for uniformly distributing fine particles to the ground surface of the thinned semiconductor wafer 1 using a fine particle rubbing apparatus is usually in the range of 10 mm / min to 5000 mm / min, preferably 100 mm / min. The moving speed can be changed at an arbitrary time from the circumference of the turntable 3 toward the center or from the center of the turntable 3 to the circumference. At this time, the turntable 3 is rotating at the same time, and the rotation speed at this time is usually in the range of 0.5 rpm to 200 rpm (rotation number / min), preferably in the range of 1 rpm to 20 rpm.

  When the rotational speed of the rotating disk 3 is constant, when the swing arm 5 advances from the circumference of the rotating disk 3 toward the center, the moving speed of the swing arm 5 is gradually increased, and conversely, the circumference from the center of the rotating disk 3 is increased. When moving forward, the moving speed of the swing arm 5 is gradually decreased.

  On the other hand, when the moving speed of the swing arm is constant, when the swing arm 5 advances from the circumference of the turntable 3 toward the center, the rotation speed of the turntable 3 is gradually decreased, and conversely, from the center of the turntable 3 When proceeding toward the circumference, the rotational speed of the turntable 3 is gradually increased. It is also possible to change the rotational speed of the turntable 3 and the moving speed of the swing arm 5 at the same time.

  As described above, by appropriately changing the rotation speed of the turntable 3 and the moving speed of the swing arm 5, the amount of fine particles sprayed (injected) per unit area on any surface on the turntable 3 is made constant. can do.

  FIG. 4 shows the relationship between the relative bending strength and the fine particle injection pressure with respect to the absence of fine particle rubbing. FIG. 4 shows that the relative bending strength decreases as the fine particle injection pressure increases. When the injection pressure is high, the ground surface collides with the ground surface and damage is caused on the ground surface, so that the relative bending strength is lowered. From the above relationship between the relative bending strength and the fine particle jet pressure, it can be seen that the fine particle jet pressure to be used is in the range of 0.001 MPa to 0.25 MPa, and from the practical viewpoint, the range of 0.005 MPa to 0.20 MPa is desirable.

  Incidentally, the damage once caused on the ground surface by the fine particle injection can be reduced by devising the pad material or the rubbing method used when rubbing the fine particles. For example, if fine particles are rubbed with a polishing pad for dry polishing, not only the damaged layer is removed at the same time as the rubbed, but also the ground surface can be flattened. At this time, care must be taken not to remove the entire rubbing layer.

  After the fine particles are uniformly dispersed on the ground surface of the thinned semiconductor wafer 1, the rubbing pad 6 is gradually brought closer to the ground surface of the semiconductor wafer 1. At this time, the thinner the semiconductor wafer is, the closer it is brought closer. As the rubbing pad used at this time, a polishing pad for dry polishing that is generally used, or a pad that is made of a material having a hardness higher than Si and that does not contain Cu or Ni is used.

  The fine particle rubbing may be performed by rotating the rotating disk 3 for rotating the semiconductor wafer 1 and the rotating disk 7 for rotating the rubbing pad 6 independently or simultaneously. When rotating simultaneously, it is desirable to rotate the turntable 3 and the turntable 7 in directions opposite to each other.

  In the initial stage of rubbing, the rotating speed of the rotating disk must be reduced (0.1 rpm or more and 2 rpm or less) in order to adjust the fine particles to the ground surface. After the fine particles have adjusted to the grinding surface, the rotational speed is gradually increased. The rotation speed of the rotating disk at this time is usually in the range of 10 rpm to 8000 rpm (number of revolutions / min), preferably in the range of 20 rpm to 3000 rpm. Moreover, the rotation direction, acceleration / deceleration, and rotation speed of the turntable 3 can be changed at an arbitrary time.

  When acclimating fine particles, if the thickness of the semiconductor wafer 1 is very thin, or if the particle size of the fine particles is large and the grinding surface is likely to be damaged, use fine particles that have been conditioned using a thick wafer in advance. By doing so, it is possible to reduce damage to a very thin semiconductor wafer grinding surface.

  FIG. 5 shows the relationship between the rubbing pressure of the relative bending strength with respect to the fine particle rubbing depth and the absence of fine particle rubbing. FIG. 5 shows that the rubbing depth can be increased as the rubbing pressure increases, but the relative bending strength is decreased. Thus, it can be seen that the rubbing depth of the fine particles and the relative bending strength are in a trade-off relationship. For this reason, the fine particle rubbing pressure cannot be increased as the wafer becomes thinner. Here, the rubbing depth refers to a depth at which the concentration of fine particles embedded on the back surface of the wafer is reduced to 0.01%. FIG. 6 shows the relationship between the Cu gettering efficiency and the relative bending strength with respect to the absence of fine particle rubbing and the fine particle rubbing depth. Higher Cu gettering efficiency means higher Cu gettering ability. FIG. 6 shows that the Cu gettering efficiency is 70% at a fine particle rubbing depth of 5 nm, 95% at 50 nm, and almost 100% at 200 nm or more. From this result, the particle depth is in the range of 1 nm to 1000 nm, the ideal particle depth is 50 nm to 500 nm, with Cu gettering efficiency of 95% or more and relative bending strength of 70% or more. It is.

  As can be seen from the results of FIGS. 1, 4, 5, and 6, the fine particle rubbing depth is arbitrarily changed by changing the fine particle size, fine particle jetting pressure, and fine particle rubbing pressure. It is possible.

  FIG. 7 shows the relationship among the particle size, Cu gettering efficiency, and rubbing depth. As can be seen from this result, the Cu gettering efficiency is less dependent on the particle size than the Cu gettering efficiency largely depends on the fine particle rubbing depth.

  However, as shown in the Cu gettering ability when the particle size of the fine particles in FIG. 7 is changed, if the rubbing depth is the same, the Cu gettering efficiency hardly depends on the particle size of the fine particles.

  After the fine particle rubbing, clean dry air or nitrogen is blown out by the compressed air nozzle 4 in order to remove foreign matters and excess fine particles remaining on the ground surface of the thinned semiconductor wafer 1. The flow rate of the dry air or nitrogen is usually in the range of 10 l / min to 1000 l / min, and preferably in the range of 50 l / min to 500 l / min. At this time, the dry air or nitrogen sprayed from the compressed air nozzle 4 is obliquely incident on the thinned semiconductor wafer, thereby effectively removing foreign matters and excess fine particles remaining on the ground surface. Can do.

  Further, by repeating the rubbing of the fine particles and the removal of foreign matters and excess fine particles by the compressed air nozzle 4 a plurality of times, the metal gettering ability of the ground surface can be enhanced while reducing the damage to the ground surface.

  The thickness of the semiconductor wafer thus obtained is in the range of 5 μm to 100 μm, preferably in the range of 30 μm to 100 μm. More ideally, it is in the range of 50 μm to 70 μm. When the thickness of the semiconductor wafer is in the range of 5 μm or more and 100 μm or less, a highly reliable semiconductor device can be obtained while maintaining the bending strength.

  In addition to rubbing fine particles spread on the grinding surface, fine particles are rubbed into the rubbing pad, or fine particles are rubbed into the grinding surface, or a pad made of the same material as the fine particles is used. Even if the grinding surface is rubbed, fine particles can be rubbed, and the same effect as in the present invention can be obtained.

  Next, a method for manufacturing a semiconductor chip and a semiconductor device provided with the semiconductor chip will be described according to a flowchart illustrated in FIG. 8 by taking the case of an SiP package as an embodiment.

  First, in order to reduce the thickness of the semiconductor wafer, a roughing process and a finishing process are performed on the back surface of the wafer so that the thickness of the wafer becomes 100 μm or less. Here, a rough grinding wheel (polishing pad) with a small grain size is used in the roughing process, and a fine grinding stone (polishing pad) having a relatively larger grain size than the grinding stone used in the roughing process is used in the finishing process. To do. Then, a dry polishing process is performed to remove the damaged layer on the ground surface. After the semiconductor wafer is dry-polished, a metal gettering layer is formed by rubbing fine particles according to the present invention in order to add a metal gettering layer to the ground surface.

  Subsequently, the semiconductor wafer is cut by a dicing process to obtain a semiconductor chip.

  This semiconductor chip is affixed to a SiP substrate, wired between the semiconductor chip and the substrate by wire bonding with a gold wire or the like, and the semiconductor chip mounted on the SiP substrate is sealed with a semiconductor sealing resin (resin). Then, the sealing process is performed by performing after-curing at 175 ° C. for 5 hours.

  Next, the SiP package can be obtained by attaching solder balls to the SiP package by a reflow process.

  Here, the apparatus will be described. From the roughing process of the semiconductor wafer to the fine particle rubbing process to the grinding surface can be performed using the apparatus of FIGS. That is, by replacing the rubbing pad 6 in FIG. 2 with a polishing pad, a roughing process, a finishing process, and a dry polishing process can be performed. In other words, in the method according to the present invention, the spray nozzle 4 and the rubbing pad 6 are newly provided in the conventionally used apparatus, so that the thinned wafer is not moved to another apparatus, and the same apparatus is used. A metal gettering layer can be formed on the wafer. For this reason, the risk that the wafer is damaged during wafer transfer can be reduced.

  As described above, a metal gettering layer can be formed by rubbing the fine particles of the present invention into the ground surface of a semiconductor wafer to obtain a semiconductor wafer capable of suppressing the influence of metal contamination that causes malfunction of the semiconductor chip.

  Under the conditions for manufacturing a semiconductor device using a semiconductor chip obtained from this semiconductor wafer, metal contamination that causes malfunction of the semiconductor chip can be gettered by the gettering layer, so that it is formed on the surface of the semiconductor wafer. Impurities do not reach the basic structure of the semiconductor chip.

  From this, the semiconductor device obtained using the said semiconductor chip shows high reliability. In the following, embodiments of the present invention will be described in more detail.

First, the fine particles will be described. Alumina particles having a copper concentration of 10 ¹⁴ atoms · cm ⁻³ or less and an average particle size of 1 μm were used as finely rubbed particles.

  Next, a semiconductor wafer and semiconductor device chip manufacturing method using a fine particle rubbing apparatus for grinding a semiconductor wafer provided with fine particles will be described.

  A semiconductor wafer with a semiconductor device for FLASH memory on the surface is roughened to 100μm using a diamond grindstone with a grain size of # 300, followed by a final grinding process to 70μm using a diamond grindstone with a grain size of # 2000 went. Thereafter, the damaged layer on the ground surface was completely removed by cutting 2 μm with dry polishing. The thickness of the obtained semiconductor wafer was about 70 μm.

Next, fine particles were rubbed into the ground surface of the thinned semiconductor wafer. At this time, the average rubbing depth of the fine particles was about 300 nm, and the Al concentration on the outermost surface was about 10 ²² atoms · cm ⁻³ . Here, the average rubbing depth of the fine particles means an average depth when the Al concentration is lowered to 0.01% of the outermost surface.

  A semiconductor chip was obtained by dicing the semiconductor wafer.

  Next, a semiconductor device including the obtained semiconductor chip will be described. After the semiconductor chip obtained in Example 2 was attached to the SiP substrate, the semiconductor chip and the substrate were connected with a gold wire by wire bonding. Subsequently, transfer molding was performed with these semiconductor sealing resins, and after-curing was performed at 175 ° C. for 5 hours.

  After the after-curing, reflow was performed under the condition of 220 ° C., and a solder ball attaching process was carried out to obtain a FLASH memory semiconductor device having a SiP package form.

  The semiconductor device thus obtained is expressed as a semiconductor device A.

  Erasing and rewriting were repeated at room temperature using a certain number of the obtained semiconductor devices A, and the threshold voltage fluctuation amount of the FLASH memory before and after erasing and rewriting was measured. When the threshold voltage fluctuation amount fluctuated more than the value allowed by the product, it was judged as a defective product, and a test was conducted to check the yield at that time. Table 1 shows the relative results with respect to Comparative Examples 1 and 2 below when the yield at this time is 100%.

  On the other hand, a semiconductor device was obtained by performing the same operation except that the average rubbing depth on the thinned semiconductor wafer grinding surface was about 50 nm. The semiconductor device thus obtained is expressed as a semiconductor device B.

  Furthermore, a semiconductor device was obtained by performing the same operation except that fine particles were not rubbed into the ground surface of the thinned semiconductor wafer. The semiconductor device thus obtained is expressed as a semiconductor device C.

  As can be seen from Table 1, it can be seen that by setting the average rubbing depth to 50 nm or 300 nm, the yield is dramatically improved as compared with the case where fine particle rubbing is not performed.

  Although Al has been described above, the same effect can be obtained by using other silicon oxide, boron oxide, phosphorus oxide, silicon, silicon carbide, W, and Mo fine particles.

Relationship diagram between relative bending strength and fine particle size for no rubbing Sectional drawing of the fine particle rubbing apparatus to the thinned semiconductor wafer grinding surface of this invention. The schematic diagram of the process of rubbing microparticles | fine-particles using the microparticle rubbing apparatus of this invention which forms a metal gettering layer on the thinned semiconductor wafer grinding surface. Relationship diagram between relative bending strength and fine particle injection pressure for no fine particle rubbing Relationship diagram between relative bending strength and fine particle rubbing pressure for fine particle rubbing depth and no fine particle rubbing Relationship between Cu gettering efficiency and relative bending strength without fine particle rubbing and fine particle rubbing depth Relationship between Cu gettering efficiency, particle size and particle rubbing depth 9 is a flowchart relating to a method for manufacturing a semiconductor device exemplifying SiP produced using the fine particle rubbing apparatus of the present invention.

Explanation of symbols

1 Thinned semiconductor wafer 2 Pedestal 3 Turntable (semiconductor wafer)
4 Fine particle and compressed air injection nozzle 5 Swing arm 6 Rub pad 7 Rotating disc (rub pad)
8 Fine particle rubbing layer.

Claims (10)

A first step of polishing the back surface of a semiconductor wafer using a first polishing pad having a first particle size and a second polishing pad having a second particle size larger than the first particle size so that the film thickness of the semiconductor wafer is 100 μm or less. When,
A second step of rubbing particles on the back surface of the semiconductor wafer after the first step;
A method for manufacturing a semiconductor device, comprising: In the manufacturing method of the semiconductor device according to claim 1,
A method for manufacturing a semiconductor device, wherein the constituent material of the particles does not contain copper or nickel. In the manufacturing method of the semiconductor device according to claim 1,
Furthermore, it has the 3rd process which disperse | distributes the said particle | grain between the said 1st process and the said 2nd process, The manufacturing method of the semiconductor device characterized by the above-mentioned. In the manufacturing method of the semiconductor device according to claim 1,
Furthermore, the manufacturing method of the semiconductor device characterized by having a dry polishing process between the said 1st process and the said 2nd process. In the manufacturing method of the semiconductor device according to claim 1,
The method for manufacturing a semiconductor device, wherein the first step and the second step are performed in the same apparatus. In the manufacturing method of the semiconductor device according to claim 1,
The method for manufacturing a semiconductor device, wherein the particles have a particle size of 0.01 μm or more and 50 μm or less. In the manufacturing method of the semiconductor device according to claim 1,
In the second step, the rubbing depth of the particles is in the range of 1 nm to 1000 nm. In the manufacturing method of the semiconductor device according to claim 1,
And a fourth step of removing particles remaining on the back surface of the semiconductor wafer in the second step, wherein the second step and the fourth step are repeated. In the manufacturing method of the semiconductor device according to claim 1,
And a fifth step of dicing the semiconductor wafer after the second step. In the manufacturing method of the semiconductor device according to claim 1,
The method for manufacturing a semiconductor device, wherein the particles include at least alumina, silicon oxide, boron oxide, phosphorus oxide, silicon, silicon carbide, W, and Mo.

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